Plasma processing device, pre-mounting processing device, mounting system, and pre-mounting processing method

Abstract

Provided are a plasma processing device, a pre-mounting processing device, a mounting system, and a pre-mounting processing method that can suppress a decrease in bonding strength at a bonding surface between an electronic component and a mounting substrate. A plasma processing device 102 performs surface processing by plasma on a bonding surface of an electronic component E of an embodiment and a mounting substrate BW before mounting the electronic component E on the mounting substrate BW, the plasma processing device including: a stage 20 in which a sheet T having an adhesive portion on a surface is supported by a ring R and which supports a component supply body TW having the electronic component E adhered to the sheet T; a chamber 10 that can be depressurized; an exhaust port 60; a gas introduction port 30; a plasma generator 40 that converts a reaction gas into plasma; and a controller that determines whether volatilization of volatile components from the component supply body TW is completed during depressurization in the chamber 10, causes the introduction of the reaction gas from the gas introduction port 30 on the basis of the determination, and causes the plasma generator 40 to convert the reaction gas into plasma.

Description

Plasma processing apparatus, pre-mounting processing apparatus, mounting system, and pre-mounting processing method

[0001] The present invention relates to a plasma processing apparatus, a pre-mounting processing apparatus, a mounting system, and a pre-mounting processing method.

[0002] Direct bonding is a method for mounting semiconductor chips, which are electronic components, to a mounting substrate. Direct bonding is a mounting method in which the connection terminals of the mounting substrate and semiconductor chip are directly bonded to each other without using bonding materials such as solder bumps. For example, the surfaces of the mounting substrate and the semiconductor chip (protective films such as SiO2 films) are terminated with hydroxyl groups. By bringing these surfaces into contact and applying pressure and heat, the mounting substrate and the semiconductor chip are bonded to each other through hydrogen bonds between the hydroxyl groups, which eventually change to covalent bonds via oxygen atoms. This results in a diffusion bond between the connection terminals of the mounting substrate and the semiconductor chip, forming a nearly integrated structure.

[0003] "Bonding" includes "temporary bonding" and "permanent bonding." Temporary bonding is the direct mounting (bonding) of an electronic component to a mounting substrate, while permanent bonding is the covalent bonding of the bonding surfaces of the temporarily bonded electronic component and mounting substrate by annealing. In the following explanation, "temporary bonding" will be referred to as "mounting."

[0004] Semiconductor chips are electronic components formed by dicing a wafer into small pieces, and are adhered to an adhesive sheet attached to a ring. The component consisting of the sheet to which the diced wafer is adhered and the ring is called a component supply body. Furthermore, the wafer on which the electronic components are mounted after being removed from the component supply body is called a mounting substrate.

[0005] When electronic components from a component supplier are directly bonded to a mounting substrate, the diced wafers and mounting substrates are pre-treated and cleaned beforehand. This pre-treatment involves surface treatment (activation and cleaning). Activation is a process that activates the surfaces of the electronic components and mounting substrates using active species such as ions and radicals generated by plasma-forming reactive gases. Activation refers to the severing of chemical bonds between molecules on the surfaces, etching oxide films formed on the surfaces of the electronic components and mounting substrates, and terminating the surfaces of the electronic components and mounting substrates with hydroxyl groups. Cleaning is a process that cleans the surfaces of the electronic components and mounting substrates using the active species such as ions and radicals generated. Cleaning refers to the removal of particles adhering to the surfaces by flicking them off or the decomposition and removal of organic matter.

[0006] In the following description, this activation process and cleaning process using plasma will be referred to as surface treatment, and the device that performs this surface treatment will be referred to as a plasma treatment device. Generally, plasma treatment devices can also perform processes other than surface treatment, and any process performed by a plasma treatment device that includes surface treatment will be broadly referred to as plasma treatment. This plasma treatment also includes reducing the pressure to generate plasma and increasing the pressure to release that pressure reduction. Pretreatment is sometimes referred to as pre-mounting treatment. Cleaning is a process in which particles and the like present on the surfaces of electronic components and mounting boards are cleaned with a liquid such as water, and the device that performs this cleaning process will be referred to as a cleaning device.

[0007] Japanese Patent Application Laid-Open No. 2020-021966

[0008] However, in such direct bonding, there are cases where the bonding strength at the bonding surface between the electronic component and the mounting substrate is reduced, which may lead to poor quality of the product manufactured by bonding (mounting) the electronic component to the mounting substrate.

[0009] An object of the embodiments of the present invention is to provide a plasma processing apparatus, a pre-mounting processing apparatus, a mounting system, and a pre-mounting processing method that can suppress a decrease in the bonding strength at the bonding surface between an electronic component and a mounting substrate.

[0010] An embodiment is a plasma processing apparatus that performs surface treatment using plasma on the bonding surface of an electronic component and a mounting substrate before mounting the electronic component on the mounting substrate, and includes: a stage that supports a component supply body on which a sheet having an adhesive portion on its surface is supported by a ring and on which the electronic component is adhered to the sheet; a chamber in which the stage is provided and the interior can be depressurized; an exhaust port that evacuates the chamber; a gas inlet port that introduces a reactive gas into the depressurized chamber; a plasma generator that converts the reactive gas into plasma; and a control device that determines that volatilization of volatile components from the component supply body has been completed while the chamber is being depressurized, and based on the determination, causes the reactive gas to be introduced from the gas inlet and the plasma generator to convert the reactive gas into plasma.

[0011] The pre-mounting processing device of the embodiment includes the plasma processing device, a load port for loading and unloading the component supply body and the mounting substrate, a supply body cleaning device for cleaning the component supply body, a mounting substrate cleaning device for cleaning the mounting substrate, and a transport device for transporting the component supply body.

[0012] The mounting system of the embodiment includes the plasma processing apparatus, a load port for loading and unloading the component supply body and the mounting substrate, a supply body cleaning device for cleaning the component supply body, a mounting substrate cleaning device for cleaning the mounting substrate, and a transport device for transporting the component supply body.

[0013] The pre-mounting treatment method of the embodiment is a method for performing pre-mounting treatment of the bonding surface between an electronic component and a mounting board before mounting the electronic component on the mounting board, and includes the following steps: a loading process in which a component supply body, having a sheet with an adhesive portion on its surface supported by a ring and having the electronic component adhered to the sheet, is loaded into a chamber; a determination process in which, while the chamber into which the component supply body has been loaded is being depressurized, it is determined that volatilization of volatile components from the component supply body has been completed; a reactive gas introduction process in which the reactive gas is introduced from the gas inlet based on the determination process; and a surface treatment in which the surface of the component supply body is treated with plasma by the plasma generator converting the reactive gas into plasma.

[0014] The embodiment of the present invention can suppress a decrease in the bonding strength at the bonding surface between the electronic component and the mounting board.

[0015] 1 is an explanatory diagram showing the processing of each part of the mounting system of an embodiment; FIG. 2 is a simplified perspective plan view showing the configuration of the mounting system of an embodiment; FIG. 3 is a cross-sectional view showing a plasma processing apparatus of an embodiment; FIG. 4 is a simplified configuration diagram showing a supply body cleaning device and a mounted substrate cleaning device of the mounting system; FIG. 5 is a graph showing changes in pressure inside a chamber in a removal device, where (A) shows a case where a component supply body is plasma-processed, (B) shows a case where the chamber is empty and a case where the component supply body is stored and not plasma-processed, (C) shows a case where the component supply body is heated in addition to (B), and (D) shows a case where surface processing is performed by plasma. FIG. 6 is a flowchart showing an operation procedure of an embodiment; FIG. 7 is a cross-sectional view of a plasma processing apparatus having a component detector; FIG. 8 is a cross-sectional view of a plasma processing apparatus having a blower and a trap; FIG. 9 is a cross-sectional view showing a plasma processing apparatus of a modified example; FIG. 10 is a simplified perspective plan view showing a mounting system in which a mounting unit has a plurality of bonding units.

[0016] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the drawings are schematic diagrams, and the size, proportions, etc. of each part are exaggerated for ease of understanding.

[0017] 1 and 2 , a mounting system 100 according to this embodiment is an example of a system for mounting electronic components E supplied by a component supplier TW onto a mounting board BW. The mounting system 100 is composed of a pre-mounting processing unit X and a mounting unit Y. A pre-mounting processing device 300 serving as the pre-mounting processing unit X performs surface treatment (activation treatment, cleaning treatment) on the component supplier TW and the mounting board BW before mounting, and a bonding device 180 serving as the mounting unit Y mounts an electronic component E (semiconductor chip) picked up from the component supplier TW that has undergone pre-mounting treatment onto the mounting board BW that has also undergone pre-mounting treatment.

[0018] As shown in FIG. 1 , the component supply TW is a sheet T having an adhesive portion on its surface supported by a ring R, with electronic components E adhered to the sheet T. In the component supply TW of this embodiment, a wafer (semiconductor wafer) W is adhered to the center of the ring R of the sheet T. The wafer W is then diced into electronic components E. The electronic components E are, for example, semiconductor chips. The sheet T is a thin, stretchable member made of resin, and its surface is provided with adhesive portions having adhesive properties including a UV-curable resin whose adhesive strength can be reduced by irradiation with UV light. The mounting substrate BW is a wafer (semiconductor wafer, substrate) W on which electronic components E detached from the component supply TW are mounted (bonded).

[0019] The pre-mounting processing device 300 performs pre-mounting processing on the bonding surfaces of the electronic components E and the mounting substrate BW before mounting the electronic components E on the mounting substrate BW. As shown in Fig. 2, the pre-mounting processing device 300 can perform pre-mounting processing (surface processing) on ​​each of the component supply bodies TW and the mounting substrates BW that are stored in a transport container F such as a FOUP (Front Opening Unified Pod) or a FOSB (Front Opening Shipping Box) and supplied from a previous process device or the like. The pre-mounting processing device 300 can also include a cleaning device that performs cleaning processing on the electronic components E and the mounting substrate BW.

[0020] The mounting system 100 is configured by arranging a plurality of chambers 11b, each housing an apparatus for performing various processes, around a base 11a of a box-shaped container that serves as a transfer chamber, according to the process. That is, the pre-mounting processing apparatus 300 that serves as the pre-mounting processing section X and the bonding apparatus 180 that serves as the mounting section Y are configured by the chambers 11b that perform various processes.

[0021] An FFU (Fan Filter Unit) (not shown) is provided on the ceiling of the base 11a, and is configured to generate a downflow of clean air to maintain a clean atmosphere inside the base 11a. Such an FFU may also be provided in the chamber 11b as needed. A transfer device 190 is provided inside the base 11a.

[0022] The base 11a is also provided with a load port 11c on which a transfer container F is mounted. The transfer container F containing unprocessed component supplies TW and mounting boards BW is mounted on the load port 11c. The component supplies TW and mounting boards BW are removed one by one from the transfer container F by a transfer device 190. The component supplies TW or mounting boards BW removed by the transfer device 190 are carried into each chamber 11b, processed, and removed.

[0023] The mounting system 100 of this embodiment may have a buffer device that temporarily stores the component supplier TW and the mounting board BW. This buffer device may be included in the mounting pre-processing unit X, or may be included in the mounting unit Y.

[0024] More specifically, the mounting system 100 of this embodiment is a system including a plasma processing apparatus 101, a supply cleaning apparatus 110, a mounting substrate cleaning apparatus 120, an adjustment processing apparatus 130, a gauging apparatus 140, an alignment apparatus 150, a supply buffer apparatus 160, a mounting substrate buffer apparatus 170, a bonding apparatus 180, a transport apparatus 190, and a control apparatus 200. The plasma processing apparatus 101, the supply cleaning apparatus 110, the mounting substrate cleaning apparatus 120, the adjustment processing apparatus 130, the gauging apparatus 140, the alignment apparatus 150, the supply buffer apparatus 160, the mounting substrate buffer apparatus 170, the transport apparatus 190, and the control apparatus 200 constitute a mounting pre-processing section X, and the bonding apparatus 180 and the control apparatus 200 constitute a mounting section Y.

[0025] The plasma processing apparatus 101 removes volatile components from the component supply TW. The plasma processing apparatus 101 performs surface treatment on the component supply TW and the mounting substrate BW. The supply cleaning apparatus 110 cleans the component supply TW, and the mounting substrate cleaning apparatus 120 cleans the mounting substrate BW. The adjustment processing apparatus 130 reduces the adhesive force of the sheet T on the component supply TW. The gauging apparatus 140 positions the component supply TW, and the alignment apparatus 150 positions the mounting substrate BW. The supply buffer apparatus 160 temporarily stores the component supply TW, and the mounting substrate buffer apparatus 170 temporarily stores the mounting substrate BW. The bonding apparatus 180 detaches electronic components E from the component supply TW and mounts them on the mounting substrate BW. The transport apparatus 190 transports the component supply TW and the mounting substrate BW between each unit and device. The control apparatus 200 controls each unit of the mounting system 100. The following describes each part in detail.

[0026] [Plasma Processing Apparatus] The plasma processing apparatus 101 is an apparatus (surface processing apparatus) that performs plasma surface treatment of the bonding surfaces of the electronic components E and / or the mounting substrate BW before mounting the electronic components E on the mounting substrate BW. The surface treatment is a process that activates and cleans the surfaces (bonding surfaces) of the electronic components E and the mounting substrate BW to be (mounted). The plasma processing apparatus 101 also functions as a removal apparatus that removes volatile components from the component supply body TW before the plasma surface treatment.

[0027] As shown in Fig. 3, the plasma processing apparatus 101 of this embodiment includes a chamber 10, which is one of the chambers 11b and can reduce the pressure inside, and is provided with a stage 20, a gas inlet 30, a plasma generator 40, a mask 50, and an exhaust port 60. The plasma processing apparatus 101 also includes a heating unit 70 and a pressure detector 80. The chamber 10 is also provided with a loading / unloading port LN for loading and unloading a component supplier TW and a mounting substrate BW, and the loading / unloading port LN is configured to be openable and closable by a shutter SH. The shutter SH is indicated by a dashed line in Fig. 3.

[0028] (Stage) The stage 20 supports the component supplier TW or the mounting board BW. In this embodiment, the component supplier TW or the mounting board BW is placed on the stage 20 after being carried into the chamber 10 through the loading / unloading port LN, which is opened by opening the shutter SH. The stage 20 in this embodiment is a placement area formed on the inner bottom surface of the chamber 10. In the following description, the direction from the stage 20 to the component supplier TW is referred to as upward or rising, and the direction from the component supplier TW to the stage 20 is referred to as downward or falling.

[0029] As shown in FIG. 3 , the stage 20 is provided with a driving unit 21 that raises and lowers the component supply unit TW or the mounting board BW. The driving unit 21 has rods 21a, 21b, and a driving mechanism 21c. The rods 21a and 21b are vertical bar-shaped members that airtightly penetrate the bottom of the chamber 10 and are movable up and down. A plurality of rods 21a are arranged at positions that can support the lower surfaces of the component supply units TW, and are rods on which the component supply units TW that are carried in and out of the chamber 10 are placed. A plurality of rods 21b are arranged at positions that can support the lower surfaces of the mounting boards BW, and are rods on which the mounting boards BW that are carried in and out of the chamber 10 are placed.

[0030] The drive mechanism 21c moves the rods 21a and 21b up and down, thereby raising and lowering the component supplier TW and the mounting board BW.

[0031] (Gas Inlet) The gas inlet 30 is an opening for introducing a reaction gas into the reduced pressure chamber 10. The gas inlet 30 is provided on the side of the chamber 10 so that the reaction gas can be introduced above the stage 20. A supply device 31 is connected to the gas inlet 30 via a pipe 31 a.

[0032] The supply device 31 supplies a reaction gas into the chamber 10 through the gas inlet 30. The reaction gas may be, for example, N ２The reactive gas is used to clean the surface of the object to be treated by removing organic matter, to etch the oxide film formed on the surface of the object to be treated, and to activate the surface of the object to be treated by terminating it with hydroxyl groups. The reactive gas is also used to purge the chamber 10. Hereinafter, the space into which the reactive gas is introduced will be referred to as the gas space GA.

[0033] (Plasma Generator) The plasma generator 40 converts the reactive gas into plasma. This plasma generation generates active species such as ions and radicals. These active species are irradiated onto the joining surfaces of the component supplier TW and the mounting board BW, thereby activating and cleaning the respective surfaces. As shown in FIG. 3 , the plasma generator 40 includes an antenna 41, a power supply 42, and a matching box 43. The antenna 41 is provided outside the chamber 10 at a position corresponding to the upper part of the gas space GA. A window member 11d is provided in the chamber 10 between the antenna 41 and the gas space GA. The window member 11d is made of a dielectric material such as quartz. When a high-frequency voltage is applied to the antenna 41, the antenna 41 generates plasma P in the gas space GA through inductive coupling via the window member 11d.

[0034] The power supply 42 is connected to the antenna 41 and applies a high-frequency voltage to the antenna 41. The matching box 43 is a matching circuit connected between the power supply 42 and the antenna 41. The matching box 43 stabilizes the discharge of the plasma P by matching the impedance on the input side and the impedance on the output side.

[0035] (Mask) As shown in Fig. 3, the mask 50 is provided in the chamber 10. The mask 50 exposes the diced wafers W (electronic components E) of the component supply body TW and covers a portion of the ring R and the sheet T. The mask 50 is arranged so as to surround the periphery of the diced wafers W in the center of the ring R. More specifically, the mask 50 is a ring-shaped member that covers the exposed surface of the sheet T other than the area where the diced wafers W are adhered and the top surface of the ring R.

[0036] A plurality of support shafts 50a protrude from the bottom of the mask 50 along the inside of the outer circumferential circle of the mask 50. The support shafts 50a are inserted into holes 11e provided in the bottom of the chamber 10 so as to be able to move up and down. Stoppers 11f are provided on the upper edges of the holes 11e. The stoppers 11f are protrusions formed to restrict the descent of the mask 50 to a predetermined height position. In this embodiment, the stoppers 11f maintain the height of the mask 50 when the mounting board BW is placed on it at the same height as when the mask 50 covers the component supplier TW.

[0037] The mask 50 is provided so as to be able to move up and down by a drive unit 51. The drive unit 51 has a rod 51a and a drive mechanism 51b. The rod 51a is a vertical rod-shaped member that passes through the bottom of the chamber 10 in an airtight manner so as to be able to move up and down.

[0038] A plurality of rods 51a are arranged at positions where they can support the underside of the mask 50. In this embodiment, three rods 51a protrude through the holes 11e and contact the three support shafts 50a, respectively. In other words, the holes 11e have through-hole portions through which the rods 51a pass. Note that in FIG. 3, the support shafts 50a and rods 51a are not shown in the actual cross section to make the operation easier to understand. The drive mechanism 51b raises and lowers the mask 50 by moving the rods 51a up and down. In addition, another support shaft is urged downward by a urging member, urging the mask 50 downward.

[0039] (Exhaust Port) As shown in FIG. 3 , the exhaust port 60 is an opening for exhausting gas (e.g., reaction gas) from the chamber 10. In this embodiment, the exhaust port 60 is provided on the side of the chamber 10. A pressure reducing device 61, such as a vacuum pump, is connected to the exhaust port 60 via a pipe 61 a. The pressure reducing device 61 reduces the pressure inside the chamber 10 through the exhaust port 60. The pressure reducing device 61 also exhausts the reaction gas from the chamber 10. Furthermore, the pressure reducing device 61 exhausts volatile components that volatilize from the component supply TW within the chamber 10 before surface treatment with plasma.

[0040] (Heating Unit) The heating unit 70 heats the component supply TW before plasma processing in the chamber 10, thereby promoting the evaporation of volatile components from the component supply TW. In this embodiment, the heating unit 70 that heats the component supply TW is provided on the stage 20. More specifically, the heating unit 70 is built into the chamber 10 below the stage 20. As a result, when the component supply TW is supported on the stage 20, the heating unit 70 faces the surface of the component supply TW opposite to the surface to which the wafer W is adhered. The heating unit 70 is, for example, a heater that generates heat when energized, and multiple cylindrical heaters are arranged. In FIG. 3 , the heating unit 70 has a cylindrical shape extending in the direction of the drawing.

[0041] The heating temperature of the heating unit 70 is a temperature at which the volatile components volatilize from the component supply TW, but at which the sheet T and the adhesive portion are not damaged (burned, melted, softened, etc.), for example, 40 to 200°C, preferably 40 to 80°C. This temperature varies depending on the materials of the sheet T and the adhesive portion. Therefore, it is preferable to determine this temperature in advance through experiments, etc.

[0042] (Pressure Detector) The pressure detector 80 is a pressure gauge that detects the pressure inside the chamber 10. The pressure detector 80 is connected to a detection port 11j provided in the chamber 10. The pressure detector 80 is also connected to a control device 200, which will be described later, and the control device 200 controls the pressure reducing device 61 and the heating unit 70 in accordance with the pressure detected by the pressure detector 80.

[0043] [Supplier Cleaning Apparatus] The supplier cleaning apparatus 110 is a cleaning apparatus that cleans electronic components E before and / or after plasma processing in the plasma processing apparatus 101. The supplier cleaning apparatus 110 of this embodiment is a processing chamber that cleans the component supplier TW. The supplier cleaning apparatus 110 performs a cleaning process that cleans particles present on the component supplier TW with a liquid such as water. In this embodiment, particles remaining on the plasma-treated component supplier TW or particles generated by the plasma processing are cleaned with a cleaning liquid L. The objects to be cleaned are the surfaces of the electronic components E, the spaces between the electronic components E, and the adhesive surface of the sheet T, and particles adhering to these surfaces are cleaned and removed. As shown in Figure 4, the supplier cleaning device 110 has a cleaning chamber 111 (chamber 11b) which is a container in which the cleaning process is performed, a support part 112 which supports the component supplier TW, a rotation mechanism 113 which rotates the support part 112, a cup 114 which receives the scattering cleaning liquid L from around the component supplier TW, and a supply part 115 which supplies the cleaning liquid L.

[0044] The cleaning chamber 111 is provided with an opening 111a through which the component supply TW is carried in and out, and the opening 111a is configured to be openable and closable by a shutter 111b. The component supply TW is carried in and out of the cleaning chamber 111 by the transport device 190 through the opening 111a with the shutter 111b open. At this time, the cup 114 is retracted by a lifting mechanism (not shown). The upper surface of the support part 112 is provided with an eccentric pin that rotates and holds the outer periphery of the component supply TW. The supply part 115 is provided with a nozzle 115a that drips cleaning liquid L and a movement mechanism 115b that moves the nozzle 115a.

[0045] The cleaning process is performed by supplying cleaning liquid L from nozzle 115a to the surface to be treated of component supply body TW, which is held by an eccentric pin of support portion 112 and rotated by rotation mechanism 113. DIW, for example, is used as the cleaning liquid L. In this case, hydroxyl groups are imparted to the surfaces of electronic components E in addition to the water cleaning.

[0046] Although not shown, the rotation mechanism 113 of the supply element cleaning device 110 is equipped with an expanding device. The expanding device expands the sheet T of the component supply element TW supported by the support portion 112 to increase the spacing between the electronic components E. With this configuration, the supply element cleaning device 110 can also clean particles present in the spacing between the electronic components E.

[0047] [Mounting Substrate Cleaning Apparatus] The mounting substrate cleaning apparatus 120 is a cleaning apparatus that cleans the mounting substrate BW before and / or after the plasma treatment in the plasma treatment apparatus 101. The mounting substrate cleaning apparatus 120 of this embodiment is a processing chamber that cleans the mounting substrate BW. The mounting substrate cleaning apparatus 120 performs a cleaning process that cleans particles present on the mounting substrate BW with a liquid such as water. In this embodiment, particles remaining on the plasma-treated mounting substrate BW or particles generated by the plasma treatment are cleaned with a cleaning liquid L. Similar to the supplier cleaning apparatus 110 shown in FIG. 4 , the mounting substrate cleaning apparatus 120 includes a cleaning chamber 111 that is a container that performs the cleaning process therein, a support 112 that supports the mounting substrate BW, a rotation mechanism 113 that rotates the support 112, a cup 114 that receives the cleaning liquid L that splashes from around the mounting substrate BW, and a supply unit 115 that supplies the cleaning liquid L. When, for example, DIW is used as the cleaning liquid L, hydroxyl groups are added to the surface of the mounting substrate BW in addition to the water cleaning.

[0048] [Adjustment Processing Device] The adjustment processing device 130 adjusts the sheet T of the component supply body TW after cleaning by irradiating it with UV light, thereby reducing the adhesive strength of the sheet T. As shown in FIG. 1 , the adjustment processing device 130 has an irradiation device 131 that irradiates the entire area below the accommodated component supply body TW with UV light by scanning a UV light source.

[0049] [Gauging Device] The gauging device 140 positions the component supply body TW. The gauging device 140 is a contact-type centering device that adjusts the position by contacting the outer periphery of the component supply body TW so that the center of the component supply body TW coincides with a reference position set inside.

[0050] [Alignment Device] The alignment device 150 positions the mounting substrate BW. The alignment device 150 is a non-contact (optical) centering device that adjusts the position of the mounting substrate BW so that the center of the mounting substrate BW coincides with a reference position provided inside.

[0051] [Supplier Buffer Apparatus] The supplier buffer apparatus 160 temporarily stores component suppliers TW before they are carried into the bonding apparatus 180. As shown in FIG. 1 , the supplier buffer apparatus 160 has a storehouse 161 that can store multiple component suppliers TW stacked at intervals.

[0052] [Mounted Board Buffer Apparatus] The mounted board buffer apparatus 170 temporarily stores the mounted boards BW before they are carried into the bonding apparatus 180. The mounted board buffer apparatus 170 has a storehouse 171 that can store a plurality of mounted boards BW stacked at intervals.

[0053] [Bonding Apparatus] The bonding apparatus 180 is included in the mounting section Y and is a processing chamber that detaches electronic components E from the component supply body TW that has been processed by the plasma processing apparatus 102 and mounts them on a mounting substrate BW. The bonding apparatus 180 includes a supply mechanism, a pickup mechanism, and a mounting mechanism, all of which are not shown. The bonding apparatus 180 uses the pickup mechanism to pick up electronic components E from the component supply body TW that have been carried into the supply mechanism by the transport device 190, and transfers them to the mounting mechanism. The mounting mechanism mounts the electronic components E on the mounting substrate BW that has been carried into the bonding apparatus 180 by the transport device 190. Note that, as shown in FIG. 1 , the bonding apparatus 180 of this embodiment flips over the picked-up electronic components E and mounts the pre-mounted surface on the surface of the mounting substrate BW that has also undergone pre-mounting processing.

[0054] [Transport Device] The transport device 190 transports component supply items TW and mounting boards BW between the load port 11c and each chamber 11b, between each chamber 11b, and between the supply item buffer device 160, the mounting board buffer device 170, and the bonding device 180. In other words, transport by the transport device 190 also includes transporting component supply items TW and mounting boards BW between the pre-mounting processing device X and the mounting unit Y. As shown in FIG. 2 , the transport device 190 has a transport robot 191 and a movement mechanism 192. The transport robot 191 is of a double-arm type, and a pair of robot hands 191a support the component supply items TW and mounting boards BW, respectively. The movement mechanism 192 moves the transport robot 191 and positions it relative to the load port 11c, each chamber 11b, and the bonding device 180. The robot hand 191 a carries in and out the component supply bodies TW and the mounting boards BW to and from each transport container F, each chamber 11 b and the bonding device 180 .

[0055] [Control Device] The control device 200 is a computer that controls each part of the mounting system 100. The control device 200 has a processor that executes programs, a memory that stores various information such as the programs and operating conditions, and a drive circuit that drives each element. In other words, the control device 200 controls the plasma processing device 101, the supply item cleaning device 110, the mounting substrate cleaning device 120, the adjustment processing device 130, the gauging device 140, the alignment device 150, the supply item buffer device 160, the mounting substrate buffer device 170, the bonding device 180, and the transport device 190. In other words, the control device 200 is also a computer that controls each part of the mounting pre-processing unit X and the mounting unit Y.

[0056] [Causes of Decrease in Bonding Strength] In direct bonding, in which electronic component E is directly bonded to a substrate without using a bonding material such as a solder bump, there have been cases where the bonding strength has decreased. There are various factors that affect the bonding strength, but one of the factors that causes the decrease in bonding strength is thought to be insufficient pre-processing before mounting. In other words, it is thought that factors that inhibit bonding remain on the bonding surface between the electronic component and the mounting substrate.

[0057] Therefore, we investigated the factors in the pre-treatment. In particular, we investigated the influence of plasma treatment. As a result, we found that there was a difference in the pressure change during plasma treatment between the case where the component supply body TW was plasma treated and the case where the mounting board BW was plasma treated. In the case where the component supply body TW was plasma treated, a pressure fluctuation occurred at the end of the plasma surface treatment, which was not observed in the case where the mounting board BW was plasma treated.

[0058] Figure 5 shows an example of the change in pressure during decompression of the chamber 10. Figure 5 is a graph with pressure on the vertical axis and time on the horizontal axis. Surface treatment using plasma is performed in a decompressed atmosphere. Therefore, the pressure inside the chamber 10 is first reduced, and when a predetermined pressure is reached, surface treatment using plasma is started. In this embodiment, this predetermined pressure is called the base pressure.

[0059] 5A shows the pressure change (progression) in the chamber 10 when a component supply body TW is plasma-treated in the plasma treatment apparatus 101. As shown in FIG. 5A, when the pressure in the chamber 10 is reduced to the base pressure, a reactive gas to be converted into plasma is introduced into the chamber 10. The introduction of the reactive gas increases the pressure in the chamber 10 to the surface treatment pressure.

[0060] Then, due to the balance between exhaust and introduction, the surface treatment pressure is maintained constant, as shown by the almost horizontal straight line in Figure 5(A). In this state, power is applied to the reactive gas to convert it into plasma. The activated species generated by converting the reactive gas into plasma perform surface treatment on the component supply body TW carried into the plasma treatment device 101. After a predetermined treatment time t0 has elapsed, the plasma surface treatment is terminated. The supply of reactive gas is stopped, and the application of power is stopped. Then, the pressure inside the chamber 10 decreases due to continued exhaust. Thereafter, exhaust is stopped, and the atmosphere is introduced, raising the pressure inside the chamber 10 to atmospheric pressure. This completes the plasma treatment.

[0061] The pressure fluctuation observed at the end of the surface treatment of the component supply body TW is shown by the circle in Figure 5(A). This fluctuation in the surface treatment pressure was not observed when the surface treatment of the mounting board BW was performed. The inventors of the present application focused on the change in amplitude due to the increase or decrease in pressure during the surface treatment.

[0062] The component supply body TW and the mounting board BW have different configurations. The component supply body TW is a sheet T attached to a ring R, with diced wafers (semiconductor wafers) W adhered to it. In contrast, the mounting board BW is a substrate consisting of only semiconductor wafers. The difference between the two is the presence or absence of the sheet T. Therefore, it was inferred that the pressure fluctuations during surface treatment of the component supply body TW were caused by the sheet T.

[0063] The adhesive portion of the sheet T holds the electronic component E and is made of a material that loses its adhesiveness when the electronic component E is peeled off during mounting. Such a material is a curable resin such as a UV-curable resin or a thermosetting resin. During mounting, the resin is cured to lose its adhesiveness just before the electronic component E is peeled off from the sheet T. Therefore, until then, the resin remains uncured in order to hold the electronic component E. Water easily dissolves in uncured resin. Furthermore, the sheet T itself is made of resin and absorbs moisture.

[0064] When a component supply TW having such components is subjected to plasma treatment, first, as the pressure is reduced, volatile components such as highly volatile adhesive portions, moisture absorbed by the sheet T, moisture dissolved in the resin, and solvent components begin to volatilize. When the plasma surface treatment begins, the heat of the plasma raises the temperature of the component supply TW. This gradually raises the temperature of the sheet T to be surface treated and the curable resin that is the adhesive portion on its surface, and further volatilizes the moisture absorbed by the sheet T, the moisture and solvent components dissolved in the resin, and the resin components themselves as gas. Therefore, it is thought that pressure fluctuations occur due to volatile gases (volatile components) after a certain amount of time has passed during the surface treatment.

[0065] Furthermore, when evaporation occurs from the sheet T or the adhesive curable resin, the temperature drops due to the heat of vaporization, which stops the evaporation. Once the evaporation stops, it begins again due to the heat of the plasma. It can be inferred that this repetition causes the observed oscillatory pressure fluctuations.

[0066] Volatile components volatilizing from the resin sheet T and adhesive portion of the component supply TW generally contain carbon. Substances with small molecular weights are more likely to volatilize. It is believed that when volatile components containing low molecular weight carbon volatilize from the component supply TW during plasma surface treatment, they are absorbed into the plasma atmosphere and ionized. The ionized volatile components collide with and react with portions of the surfaces of the electronic components E. It is believed that compounds or carbon-containing functional groups are formed on portions of the surfaces of the electronic components E that react with the ionized volatile components, rendering those portions inactive. These compounds or carbon-containing functional groups cannot be removed even by cleaning with the supply cleaning device 110. As a result, it is believed that a decrease in the bonding strength occurs at the bonding surface between the component supply TW and the mounting board BW.

[0067] In other words, various factors can be considered to cause a decrease in bonding strength. One factor is when the surface treatment of the component supply body TW by plasma is insufficient, which is thought to be due to volatiles volatilizing from the sheet T or the adhesive portion. Such a situation that causes a decrease in bonding strength can be considered a defect in the pre-mounting treatment. It can also be considered a defect in the mounting treatment.

[0068] 5B, the change in pressure when the empty chamber 10 is evacuated and depressurized in the same manner as in plasma processing is shown by the dashed line, and the change in pressure when the chamber 10 contains a component supply TW and is evacuated and depressurized in the same manner without performing surface processing is shown by the broken line. Although not shown for ease of illustration, the change in pressure when the mounting board BW is contained in the chamber 10 and depressurized in the same manner was the same as when the chamber 10 was empty. In other words, it was the same as the change shown by the dashed line.

[0069] 5B, since exhaust is continued without performing surface treatment, the pressure in both the component supplier TW and the mounting board BW exceeds the base pressure and continues to decrease. Also, the pressure change in the mounting board BW matches that when the chamber 10 is empty, but the pressure changes in the component supplier TW and the mounting board BW do not match.

[0070] At the same elapsed time after the start of evacuation, the pressure in the chamber 10 housing the component supply TW is always higher than that in the chamber 10 housing the mounting board BW. This can be explained by considering that volatile components are volatilizing from the component supply TW, as described above. In other words, as the pressure is reduced, volatilization occurs from the component supply TW, and this volatilization increases the pressure. It can be inferred that the volatilization pressure is added to the decompression pressure, so the pressure increases by the amount of volatilization. In the case of FIG. 5(B), the pressure difference is large near the base pressure. This indicates that the amount of volatilization from the component supply TW increases near the base pressure. This is thought to be because relatively volatile components volatilize in pressure regions higher than the base pressure, while less volatile components also volatilize at pressures lower than the base pressure.

[0071] [Regarding Elimination of Bonding Interference Factors] From the above observations and inferences, it can be seen that one of the bonding interference factors can be eliminated by removing volatile components from the component supply body TW in advance before performing surface treatment. Therefore, in the mounting system 100 of this embodiment, the plasma processing device 101 of the pre-mounting processing device 300 is configured to remove volatile components from the component supply body TW before activating and cleaning the surfaces of the electronic components E. Furthermore, in the plasma processing device 101 of this embodiment, the heating unit 70 heats the component supply body TW within the reduced-pressure chamber 10 to promote volatilization of volatile components from the component supply body TW.

[0072] That is, to prevent volatilization of unnecessary components during plasma surface treatment, the amount of volatile components generated from the component supply TW is reduced in advance to an amount that does not affect the bond strength before surface treatment. In other words, it is not necessary to remove all of the volatile components. This is referred to as a removal process. Here, "not affecting the bond strength" means that the bond strength at the bonded surface between the component supply TW and the mounting substrate BW does not decrease below the required predetermined strength. The predetermined strength refers to the bond strength obtained when, after the temporary bonding in the mounting process, annealing is performed, and the bonded surfaces between the component supply TW and the mounting substrate BW are finally converted to covalent bonds via oxygen atoms, resulting in a nearly integrated bond. The relationship between the bond strength and the amount of volatilization can be confirmed and determined in advance through experiments, etc. The amount of volatilization can be observed by measuring the pressure inside the chamber 10, as described below.

[0073] FIG. 5C shows an example of pressure changes during depressurization in the chamber 10 of the plasma processing apparatus 101 of this embodiment. The dashed line in the graph of FIG. 5C, like FIG. 5B, shows the pressure changes during depressurization in an empty chamber 10. Therefore, it shows the pressure changes when there is no component supply TW in the chamber 10 and no volatilizable components. The dashed line in the graph of FIG. 5C, like FIG. 5B, shows the pressure changes when there is a component supply TW in the chamber 10 and volatilizable components are present. The solid line in the graph of FIG. 5C shows the pressure changes when there is a component supply TW in the chamber 10 (and volatilizable components are present) and heating is performed by the heating unit 70 to further promote volatilization. Note that the exhaust volume is constant in all states.

[0074] As shown in Figure 5(C), in either case, the pressure inside the chamber 10 drops rapidly from the start of pressure reduction and gradually becomes constant. As shown by the dashed and solid lines, when a volatile component such as the component supply TW is present, once the pressure inside the chamber 10 is reduced to about 4000 Pa, the pressure drop becomes more gradual compared to when the chamber is empty (dash-dotted line), and slight fluctuations in pressure occur. This is thought to be mainly due to the evaporation of moisture adsorbed to the sheet T and adhesive portions. Therefore, the pressure inside the chamber 10 drops as the moisture evaporates.

[0075] As shown by the solid line in the graph of Figure 5(C), when heating is performed, the pressure drop is even more gradual than when empty (dash-dotted line). This is thought to be because heating causes water to volatilize more rapidly. Of course, it is not limited to water that volatilizes; volatilizing components such as solvents in the resin components may also be present.

[0076] As shown by the dashed and solid lines in the graph of FIG. 5C , when a component supply TW is present in the chamber 10, i.e., when volatilizable components are present, a period of time occurs during which the pressure decrease becomes more gradual as the pressure is reduced. During this period, the pressure fluctuates oscillatedly. This tendency is more pronounced when heating is performed than when heating is not performed. As the pressure decreases, a larger amount of less volatile components volatilizes, resulting in a slower decrease in pressure. This volatilization is thought to be due to increased volatilization from the sheet T and the adhesive portion on its surface. The adhesive portion is made of uncured curable resin, and possible causes include air and moisture trapped inside the adhesive portion escaping from the resin, and the solvent component and the resin itself volatilizing.

[0077] Here, the reason why the pressure decreases more slowly while volatile components continue to volatilize from the component supply TW than when this volatilization does not occur will be explained using the following equation. If the pressure inside the chamber 10 is P, the amount of minute gas flowing into the chamber 10 (leakage amount) is Le, the amount of volatile components volatilized from the component supply TW is Vo, and the exhaust volume of the pressure reducing device 61 (exhaust device) is Ex, the relationship shown in equation (1) below is established. P = Le + Vo - Ex (1) If no volatile components have volatilized from the component supply TW, then P = Le - Ex, and the pressure becomes constant when Le and Ex are balanced. If volatile components are volatilizing, equation (1) shows that the pressure inside the chamber 10 will be higher than normal by the amount of Vo.

[0078] The amount of Vo repeatedly increases and decreases due to the interaction of the following four phenomena: (a) As the pressure inside the chamber 10 decreases, the boiling point also decreases; (b) The boiling point differs depending on the volatile component; (c) When a volatile component evaporates, it takes heat of vaporization from the surroundings (e.g., the sheet T or adhesive portion), causing the surrounding temperature to decrease; (d) Even within the same component, some components are more likely to volatilize than others (e.g., volatile components adsorbed on the surface or adhesive portion of the sheet T are more likely to volatilize, while volatile components adsorbed inside the sheet T or adhesive portion are less likely to volatilize). Therefore, when the inflow amount Le and the exhaust amount Ex are constant, P changes with changes in Vo.

[0079] Specifically, due to event (a), the pressure inside chamber 10 decreases, causing the boiling point of the volatile component to decrease, and the volatile component begins to volatilize. However, due to event (c), the temperature of sheet T and the adhesive portion decreases, causing the temperature of the volatile component to decrease as well. As a result, the temperature of the volatile component decreases below the reduced boiling point as the pressure is reduced, and volatilization stops. However, as the pressure inside chamber 10 decreases further, event (a) occurs again, causing the boiling point of the volatile component to decrease further, and the volatile component begins to volatilize again. This repetition causes the amount of Vo to increase and decrease repeatedly. Furthermore, due to the interaction of events (b) and (d), different volatile components repeatedly start and stop volatilizing within a certain pressure range. As a result, the amount of Vo increases and decreases in an even more complex manner.

[0080] In the plasma processing in the plasma processing apparatus 101, when a reactive gas is introduced for plasma surface processing, the pressure inside the chamber 10 rises, and the boiling point of the volatile components also rises, temporarily stopping the volatilization of the volatile components. After that, the component supply body TW is heated by the heat of the plasma, and when the boiling point of the volatile components is exceeded, volatilization occurs.

[0081] As the volatilization of volatile components progresses, the amount of volatilization decreases or disappears, and the rate of pressure decrease increases again as exhaust progresses. The dashed and solid lines in Figure 5(C) show that the pressure line is nearly horizontal, the pressure decrease is gradual, and after an oscillatory pressure change, the slope of the pressure decrease becomes steep. When this slope becomes steep, it can be said that the volatilization of volatile components has almost ceased. In other words, at this point, the volatile components have been removed from the component supply TW.

[0082] That is, before the surface treatment using plasma, the component supply body TW can be exposed to a reduced pressure atmosphere or further heated to promote the volatilization of the volatile components, thereby performing a removal treatment to remove the volatile components in advance.

[0083] From the above, in the plasma processing apparatus 101 containing the component supply body TW, when the pressure inside the chamber 10 is reduced, the rate of pressure decrease slows down and then increases, it is determined that the evaporation from the component supply body TW has stopped, i.e., the volatile components have been removed, and then surface treatment using plasma is performed, thereby preventing reactions that would inhibit bonding during surface treatment.

[0084] However, if the removal process is insufficient, unnecessary components will volatilize during the plasma surface treatment, affecting the bond strength, while excessive removal will result in reduced productivity. Therefore, it is necessary to properly control the end point (endpoint) of the removal process. In other words, the end point of the removal process is the point at which the amount of volatile components volatilized from the component supply TW has decreased to a level that does not affect the bond strength.

[0085] In order to quickly reduce the amount of volatile components volatilizing from the component supply body TW to an amount that does not affect the bonding strength, the volatilization of the volatile components is promoted. For this purpose, in the plasma processing apparatus 101, the component supply body TW is subjected to a process of exposing it to a reduced pressure atmosphere or a heat treatment while being exposed to a reduced pressure atmosphere before the surface treatment.

[0086] When heating is performed while reducing pressure in the plasma processing apparatus 101, the pressure inside the chamber 10 changes as shown by the solid line in the graph of FIG. 5C. As the pressure decreases, moisture evaporates first from the sheet T and the adhesive portions on its surface. Therefore, at the same exhaust volume as when no volatile components are present, as shown by the dashed-dotted line in FIG. 5C, the pressure decreases more slowly than when no volatile components are present. After and / or simultaneously with the moisture evaporation, evaporation occurs primarily from the adhesive portions. As a result, a period of time occurs during which the pressure decrease becomes even more gradual due to the increase in the amount of evaporation, and the amplitude of the pressure increase / decrease becomes more rapid. After this period of time during which the slope of the pressure change is small and the amplitude is rapid, the amplitude of the pressure increase / decrease becomes smaller, and the pressure suddenly decreases. This indicates that evaporation from the component supply TW has ended. The point at which the slope of the pressure change changes is thus determined as the end point (endpoint) of the removal process. The pressure inside the chamber 10 at the end point, at time t1 from the start of pressure reduction, is designated as pressure Ep1, and is indicated by a white circle in FIG. 5(C).

[0087] In the plasma processing apparatus 101 of this embodiment, the control device 200 determines that volatilization of the volatile components from the component supply body TW is complete while the chamber 10 is being depressurized. The control device 200 determines that volatilization of the volatile components is complete when the pressure inside the chamber 10, detected by the pressure detector 80, reaches a preset pressure. The control device 200 starts heating by the heating unit 70 upon starting depressurization of the chamber 10, and, based on the determination that volatilization of the volatile components is complete, stops heating by the heating unit 70, thereby ending the removal process. This pressure may be the endpoint pressure Ep1 described above. This pressure is, for example, 3 to 50 Pa and is preset in the memory of the control device 200. Based on the determination that volatilization of the volatile components is complete, the control device 200 introduces a reactive gas through the gas inlet 30 and causes the plasma generator 40 to generate plasma from the reactive gas.

[0088] In the plasma processing apparatus 101, when the chamber 10 is only exposed to a reduced pressure atmosphere without heating, the pressure inside the chamber 10 changes as shown by the dashed line in the graph of Figure 5(C). As the pressure decreases, moisture volatilizes. Therefore, at the same exhaust volume as when no volatilizable components are present (shown by the dashed line), the pressure decreases more slowly than when no volatilizable components are present. However, the amount of volatilization per unit time is smaller and the pressure decrease is faster than when heating is performed.

[0089] After and / or simultaneously with the evaporation of moisture, evaporation occurs from volatile components derived from the sheet T and the adhesive portion. This results in a time period during which the pressure decrease becomes gradual due to the increase in the amount of evaporation, and the amplitude of the pressure increase / decrease becomes more pronounced. After a period during which the amplitude of this pressure change becomes more pronounced and the slope becomes smaller, a period of time comes when the amplitude of the pressure increase / decrease becomes smaller and the pressure decrease becomes more rapid. In this case, too, the point at which the slope of the pressure change changes (time t2 from the start of pressure reduction) is set as the endpoint, and the pressure Ep2 at that point is indicated by a white circle in FIG. 5C . The pressure Ep2 is, for example, 0.01 to 10 Pa. The pressure Ep2 is preset as a set pressure in the memory of the control device 200.

[0090] In this case, the plasma processing apparatus 101 may have a structure similar to that shown in FIG. 3 except that the heating unit 70 is removed. The control device 200 controls each component of the plasma processing apparatus 101 in accordance with the pressure detected by the pressure detector 80. The control device 200 controls each component of the plasma processing apparatus 101 to start surface processing when the pressure detected by the pressure detector 80 reaches a preset pressure. Alternatively, the control device 200 starts surface processing when the rate of decrease in the pressure detected by the pressure detector 80 decreases from immediately after evacuation and then increases. During the depressurization before surface processing, volatile components vaporized from the component supply TW loaded into the chamber 10 and supported on the stage 20 are exhausted by the depressurization device 61.

[0091] The control device 200 controls the drive unit 51 to switch the position of the mask 50 before and after the completion of the volatilization of the volatile components. Until it is determined that the volatilization of the volatile components from the component supplier TW is complete, the control device 200 keeps the mask 50 at the maximum distance from the sheet T, and when it is determined that the volatilization of the volatile components from the component supplier TW is complete, the control device 200 keeps the mask 50 at the minimum distance from the sheet T.

[0092] [Operation] The operation of the mounting system 100 of this embodiment as described above will be described with reference to the flowchart of Fig. 6 in addition to the aforementioned Figs. 1 to 5. A mounting method for mounting an electronic component E on a mounting board BW according to the following procedure is also one aspect of this embodiment. Note that the following description follows the flowchart of Fig. 6, but it also includes a state in which each process is performed simultaneously in parallel.

[0093] 2, a transport container F containing a component supply TW and a transport container F containing a mounting substrate BW are mounted on the load port 11c. The transport robot 191 receives the component supply TW from the transport container F on the load port 11c and transports the component supply TW to the plasma processing apparatus 101.

[0094] The plasma processing apparatus 101 removes volatile components that have evaporated from the adhesive portions of the component supply TW and from the sheet T (volatile component removal process: step S100). First, the drive unit 51 raises the rod 51a, raising the mask 50 against the biasing force of the biasing member. At this time, the mask 50 is positioned at the maximum distance from the sheet T (the state shown by the dotted line in FIG. 3). By raising the mask 50, the mask 50 is retracted so as not to obstruct the entry of the robot hand 191a of the transport robot 191 into the chamber 10. Next, the shutter SH opens, and the robot hand 191a of the transport robot 191 supporting the component supply TW is inserted through the loading / unloading port LN. The robot hand 191a positions the component supply TW above the rod 21a.

[0095] The driving mechanism 21c raises the rod 21a, lifting the component supplier TW from the robot hand 191a, and the robot hand 191a retracts. After the robot hand 191a retracts, the shutter SH closes. The driving mechanism 21c lowers the rod 21a, placing the component supplier TW on the stage 20. At this time, the rod 51a is not lowered, and the mask 50 remains raised.

[0096] In this state, the pressure reducing device 61 begins evacuation. The heating unit 70 also begins heating. This reduces the pressure inside the chamber 10 while heating the component supply TW, causing volatile components to volatilize from the component supply TW. When the pressure detected by the pressure detector 80 reaches the set pressure, the heating unit 70 stops heating. The reason for stopping heating in the heating unit 70 is that the component supply TW will also be heated by the subsequent plasma surface treatment, and volatilization during the surface treatment would impede the surface treatment. The reason for stopping heating in the heating unit 70 is to prevent the adhesive portion of the component supply TW or the sheet T from becoming too hot and melting or softening. If the heating temperature in the heating unit 70 is close to the heat resistance temperature or glass transition temperature of the adhesive portion or the sheet T, a waiting time may be provided after stopping heating in the heating unit 70.

[0097] Next, the plasma processing apparatus 101 activates and cleans the surfaces of the electronic components E by performing surface treatment using plasma (supply surface treatment step: step S101). That is, while the pressure reducing device 61 continues to evacuate the chamber 10 to create a vacuum, the driving unit 51 lowers the rod 51a as shown in FIG. 3. As the rod 51a lowers, the mask 50 lowers due to the biasing force of the biasing member. The mask 50 comes into contact with the ring R and stops, covering the ring R and the sheet T. That is, the mask 50 is positioned at the minimum distance from the sheet T.

[0098] In this state, as shown in FIG. 3 , the supply device 31 supplies reactive gas to the gas space GA, and the power supply 42 applies high-frequency power to the antenna 41, generating plasma P in the gas space GA. The reactive gas is converted into plasma, generating active species such as ions and radicals, which activate and clean the surfaces of the electronic components E. The reactive gas is exhausted from the exhaust port 60 by the pressure reducing device 61. The active species that tend to move toward the vicinity of the outer periphery of the wafer W, i.e., the vicinity between the ring R and the electronic components E, are prevented from contacting the ring R and the exposed surfaces of the sheet T by the mask 50 (as indicated by the arrows in the figure). Therefore, etching of the exposed surfaces of the ring R and the sheet T by the active species is suppressed. When the control device 200 determines that the surface treatment time (t0) has elapsed, it terminates the plasma surface treatment. In this way, the plasma processing device 101 activates and cleans the surfaces of the component supply body TW through surface treatment (supply body surface treatment process: step S101).

[0099] FIG. 5D shows the pressure change in the chamber 10 when plasma surface treatment is being performed in the above-described plasma treatment. When Ep1 is used as the endpoint, as shown by the solid line, after the pressure reaches Ep1, a reactive gas is introduced into the chamber 10 and the pressure inside the chamber 10 is adjusted to the surface treatment pressure. Then, the surface treatment is performed for a preset surface treatment time t0. When Ep2 is used as the endpoint, as shown by the dashed line, after the pressure reaches Ep2, a reactive gas is introduced into the chamber 10 and the pressure inside the chamber 10 is adjusted to the surface treatment pressure. Then, the surface treatment is performed for a preset surface treatment time t0.

[0100] After the surface treatment of the component supply TW, the drive unit 51 raises the rod 51a. The drive unit 51 raises the mask 50 against the biasing force of the biasing member, separating the mask 50 from the ring R. The drive mechanism 21c raises the rod 21a, thereby lifting the component supply TW. The shutter SH opens, and the robot hand 191a is inserted through the loading / unloading port LN. The drive mechanism 21c lowers the rod 21a, and the component supply TW is placed on one of the robot hands 191a of the double arm and handed over. The robot hand 191a then carries the component supply TW out through the loading / unloading port LN.

[0101] While the surface treatment of the component supply body TW is being performed, the transport robot 191 receives the mounting substrate BW from the transport container F with the other robot hand 191a of the double arm. The transport robot 191 receives the component supply body TW from the rod 21a of the plasma processing device 101, and delivers the mounting substrate BW to the plasma processing device 101. The plasma processing device 101 activates and cleans the surface of the mounting substrate BW by performing surface treatment using plasma (mounting substrate surface treatment process: step S102).

[0102] The procedure for plasma treatment of the mounting substrate BW is the same as that of the above-described supply body surface treatment step, except that in the case of the mounting substrate BW, the volatile component removal step is not performed, and only the surface treatment using plasma is performed.

[0103] The transport robot 191 delivers the surface-treated component supply TW to the support 112 of the supply cleaning device 110. The supply cleaning device 110 rotates the surface-treated component supply TW delivered to the support 112 using the support 112 and the rotation mechanism 113 while supplying cleaning liquid L to the component supply TW. In this manner, the component supply TW is cleaned (supply cleaning process: step S103). This removes particles generated by the etching effect of the plasma surface treatment. At this time, the sheet T of the supply cleaning device 110 is expanded by the expanding device, and the electronic components E are cleaned with the spacing between them widened. After cleaning by supplying cleaning liquid L, the sheet is rotated at high speed to shake off the cleaning liquid L and dry. After drying, the rotation of the support 112 is stopped, and the expanding device releases the sheet T, causing it to contract to its original state, restoring the spacing between the electronic components E to its original state.

[0104] After the surface treatment of the mounting substrate BW in the plasma processing apparatus 101 is completed, the transfer robot 191 receives the mounting substrate BW from the plasma processing apparatus 101. The transfer robot 191 delivers the received mounting substrate BW to the mounting substrate cleaning apparatus 120. The mounting substrate cleaning apparatus 120 supplies cleaning liquid L to the mounting substrate BW while rotating the mounting substrate BW. In this manner, the mounting substrate BW is cleaned (mounting substrate cleaning process: step S104). After cleaning by supplying cleaning liquid L, the mounting substrate BW is dried by spinning at high speed to shake off the cleaning liquid L. This mounting substrate cleaning process includes a state in which it is performed simultaneously with the supply body cleaning process. In other words, the time during which the component supply body TW is cleaned and the time during which the mounting substrate BW is cleaned overlap.

[0105] After the cleaning process of the component supply TW is completed, the transport robot 191 receives the component supply TW from the supply cleaning device 110 and hands it over to the gauging device 140. The gauging device 140 aligns the component supply TW (positioning process: step S105). After the alignment is complete, the transport robot 191 receives the component supply TW from the gauging device 140 and hands it over to the adjustment processing device 130. The adjustment processing device 130 performs an adjustment process to reduce the adhesive strength of the sheet T by irradiating the component supply TW with UV light (adjustment process: step S106). These positioning and adjustment processes overlap with the mounting substrate cleaning process.

[0106] After the cleaning process of the mounting substrate BW is completed, the transfer robot 191 receives the mounting substrate BW from the mounting substrate cleaning device 120 and transfers it to the alignment device 150. The alignment device 150 aligns the mounting substrate BW (positioning step: step S107).

[0107] After the adjustment process is completed, the transport robot 191 receives the component supply TW from the adjustment processing device 130 and hands it over to the supply buffer device 160. After the alignment of the mounting board BW is completed, the transport robot 191 receives the mounting board BW from the alignment device 150 and hands it over to the mounting board buffer device 170.

[0108] In this way, the component supply items TW and the mounting boards BW are stored in the supply item buffer unit 160 and the mounting boards BW (storing process: step S108). After storing the component supply items TW and the mounting boards BW, when the bonding apparatus 180 becomes ready to accept them, the transport robot 191 receives the component supply items TW and the mounting boards BW and hands them over to the bonding apparatus 180. That is, in response to a signal from the bonding apparatus 180 indicating that processing is complete and the bonding apparatus 180 is ready to accept them, the transport robot 191 removes the component supply items TW and the mounting boards BW from the supply item buffer unit 160 and the mounting boards BW from the mounting board buffer unit 170. The transport robot 191 then carries the component supply items TW and the mounting boards BW into the bonding apparatus 180. In the bonding apparatus 180, electronic components E are picked up from the component supply items TW and mounted on the mounting boards BW (mounting process: step S109).

[0109] [Effects] (1) This embodiment is a plasma processing apparatus 102 that performs surface treatment using plasma on the bonding surface of an electronic component E and a mounting board BW before mounting the electronic component E on the mounting board BW, and includes a stage 20 that supports a component supply body TW on which a sheet T having an adhesive portion on its surface is supported by a ring R and on which an electronic component E is adhered to the sheet T, a chamber 10 in which the stage 20 is provided and the interior of which can be depressurized, an exhaust port 60 that evacuates the chamber 10, a gas inlet 30 that introduces a reactive gas into the depressurized chamber 10, a plasma generator 40 that converts the reactive gas into plasma, and a control device that determines, while the chamber 10 is being depressurized, that volatilization of volatile components from the component supply body TW has been completed, and, based on the determination, causes the reactive gas to be introduced from the gas inlet 30 and the plasma generator 40 to convert the reactive gas into plasma.

[0110] This embodiment is a mounting pre-processing method for performing mounting pre-processing of the bonding surface between an electronic component E and a mounting board BW before mounting the electronic component E on the mounting board BW, and includes a carrying-in process for carrying a component supply TW, in which a sheet T having an adhesive portion on its surface is supported by a ring R and an electronic component E is adhered to the sheet T, into a chamber 10; a determination process for determining, while the chamber 10 into which the component supply TW has been carried is depressurized, that the volatilization of volatile components from the component supply TW has been completed; a reactive gas introduction process for introducing a reactive gas from a gas inlet 30 based on the determination process; and a surface treatment for treating the surface of the component supply TW with plasma by a plasma generator 40 converting the reactive gas into plasma.

[0111] The pre-mounting processing device 300 of this embodiment has a plasma processing device 101, a load port 11c for loading and unloading component supply bodies TW and mounting substrates BW, a supply body cleaning device 110 for cleaning the component supply bodies TW, a mounting substrate cleaning device 120 for cleaning the mounting substrates BW, and a transport device 190 for transporting the component supply bodies TW.

[0112] The mounting system 1 of this embodiment includes a pre-mounting processing device 300 and a bonding device that detaches the electronic component E processed by the pre-mounting processing device 300 from the component supplier TW and mounts it on a mounting board BW.

[0113] Therefore, volatile components can be discharged from the component supply body TW before the surface treatment with plasma. In particular, volatile components can be discharged from the sheet T having the adhesive portion. This reduces the amount of volatile components volatilizing from the component supply body TW during the surface treatment with plasma. Therefore, it is possible to prevent the volatile components volatilized from the component supply body TW from bonding to the surfaces of the electronic components E of the component supply body TW as compounds or carbon-containing functional groups. In other words, the active and clean state of the surfaces of the electronic components E is not contaminated by volatile components volatilized from the sheet T or the adhesive portion. Therefore, it is possible to prevent a decrease in the bonding strength at the bonding surface between the component supply body TW and the mounting board BW.

[0114] Furthermore, the volatile components volatilizing from the component supply body TW can be removed in one chamber 10 of the plasma processing apparatus 101. With this configuration, the surface treatment using plasma can be performed following the volatile component removal treatment, thereby shortening the treatment time and preventing the apparatus from becoming larger. In particular, in this embodiment, heating in a reduced pressure atmosphere allows the volatile components to volatilize from the component supply body TW more quickly. This shortens the pretreatment time and enables high-speed mounting.

[0115] (2) The stage 20 is provided with a heating unit 70 that heats the component supply body TW, and the control device 200 starts heating by the heating unit 70 when the chamber 10 starts to be depressurized, and stops heating by the heating unit 70 based on the determination that the volatilization of the volatile components has been completed. In this way, when heating is performed while depressurizing the plasma processing device 101, the volatilization of the volatile components is promoted, and as is clear from FIG. 5C , the endpoint is reached early. In other words, the removal process can be performed reliably and quickly.

[0116] (3) The plasma processing apparatus 101 has a pressure detector 80 that detects the pressure inside the chamber 10, and the control device 200 determines that the volatilization of volatile components from the component supplier TW is complete when the pressure detected by the pressure detector 80 reaches a preset pressure. The pressure inside the chamber 10 being evacuated is affected by volatilization from the component supplier TW inside the chamber 10. As volatile components volatilize from the component supplier TW into the chamber 10, the rate at which the pressure inside the chamber 10 decreases slows. As volatilization progresses and the amount of volatilization decreases, the rate at which the pressure decreases increases. In this way, the state of pressure drop due to evacuation inside the chamber 10 changes depending on the state of volatilization from the component supplier TW, and a point in time (endpoint) at which the slope of the pressure change switches occurs.

[0117] In this case, a decrease in the amount of volatilization means that the volatile components have been removed from the component supply TW. Therefore, the endpoint can be said to be a pressure that ensures the volatilization time for the volatile components. In other words, by observing the pressure change in the chamber 10 with the pressure detector 80, it is possible to detect (determine) whether the volatile components have been removed and whether the volatilization time has been ensured. Therefore, the component supply TW can be brought into a state where the volatile components have been removed at least to the extent that no problems occur during the mounting process.

[0118] As can be seen from Fig. 5(D), the plasma surface treatment is performed after the end points (Ep1, Ep2) at which volatile components are removed from the component supply TW. This allows the surface treatment to be performed sufficiently while suppressing the evaporation of volatile components during the surface treatment. This reduces defects in the mounting process.

[0119] Furthermore, by setting the endpoint pressure (see Ep1 in FIG. 5(D)) to a set pressure while heating under reduced pressure, the timing to stop heating can be set. If the volatile components are not removed sufficiently, unnecessary components will volatilize during plasma processing, affecting the bonding strength. If the removal process is excessive, productivity will decrease. By properly controlling the end point (endpoint) of the removal process, necessary volatile components can be reliably removed and productivity can be increased. Even when heating is not performed under reduced pressure, by setting the endpoint pressure (see Ep2 in FIG. 5(D)) to a set pressure, high productivity can be achieved while suppressing the impact of volatile components on bonding strength, although it takes longer than when heating.

[0120] (4) The plasma processing apparatus 101 is provided in the chamber 10, and has a mask 50 that exposes the wafer W and covers the ring R and a portion of the sheet T. The control device 200 separates the mask 50 from the sheet T to a maximum distance until it is determined that the volatilization of the volatile components from the component supplier TW has been completed, and separates the mask 50 from the sheet T to a minimum distance when it is determined that the volatilization of the volatile components from the component supplier TW has been completed.

[0121] Therefore, during the volatilization of the volatile components, the mask 50 is at the maximum distance from the sheet T, so that the volatilization of the volatile portions is not hindered. Furthermore, when performing surface treatment using plasma after the volatilization of the volatile components is completed, the distance between the mask 50 and the sheet T is minimized, and the ring R and a portion of the sheet T are covered, so that the exposed portions of the ring R and the sheet T are prevented from being etched. In the plasma treatment device 101, after a certain amount of the volatile components are removed from the component supply body TW, the surfaces of the electronic components E are activated and cleaned. In this manner, a decrease in the bonding strength at the bonding surface between the component supply body TW and the mounting board BW can be prevented.

[0122] Furthermore, it is possible to realize narrow spacing between connection terminals, which was previously impossible due to contact between bonding members made of bumps of solder, gold, copper, aluminum, etc. on the connection terminals, and a high-density package can be achieved.

[0123] [Modifications] The plasma processing apparatus 101, the pre-mounting processing apparatus 300 serving as the pre-mounting processing unit X, and the mounting system 100 of this embodiment can also be configured in the following modifications.

[0124] (1) As shown in FIG. 7 , the plasma processing apparatus 101 of this embodiment may be provided with a component detector 90 that detects the amount of a specific component in the gas within the chamber 10. In this case, the component detector 90 detects the amount of volatilization of a volatile component from the component supply TW as the amount of the specific component. When the amount of the specific component detected by the component detector 90 or the change in the amount of the specific component becomes equal to or less than a preset amount, the control device 200 determines that the volatilization of the volatile component from the component supply TW is complete and starts surface processing. In the case of an embodiment in which heating is performed by the heating unit 70, the control device 200 determines that the volatilization time has been secured when the amount of the specific component or the change in the amount of the specific component becomes equal to or less than a preset amount (endpoint) and causes the heating unit 70 to stop heating. In this case, too, the control device 200 keeps the mask 50 at the maximum distance from the sheet T until it is determined that the evaporation time of the volatile components from the component supply TW has been secured, and then keeps the mask 50 at the minimum distance from the sheet T when it is determined that the evaporation time of the volatile components from the component supply TW has been secured.

[0125] More specifically, a quadrupole mass spectrometer (Q-mass) that detects components through a detection port 11k formed in the chamber 10 is used as the component detector 90. The component detector 90 ionizes the gas present in the chamber 10 and separates and measures the generated ions based on their mass. In other words, the component detector 90 analyzes the mass of ions generated from the gas present in the chamber 10 and detects the amount of each mass present.

[0126] In this case, the specific component can be, for example, a component specific to the component supply body TW. By selecting a component derived from the sheet T or adhesive portion of the component supply body TW, other than the volatile component present in the chamber 10 (for example, moisture adsorbed by the chamber wall), it is possible to suppress the evaporation of the volatile component during the surface treatment.

[0127] Such components volatilized from the plasma processing apparatus 101 appear as noise in the amount of pressure change. In this embodiment, the amount of ions derived from the volatile components volatilized from the component supplier TW is detected. This allows for more accurate measurement of the amount of volatilized components from the component supplier TW.

[0128] Therefore, the mass of ions derived from the volatile components volatilized from the component supplier TW is determined in advance, and ions having the same mass as the determined mass are monitored as the amount of volatile components volatilized from the component supplier TW. In this manner, the amount of ions derived from the volatile components volatilized from the component supplier TW is detected. That is, the amount of components is detected by monitoring ions having the same mass as the mass of ions derived from the volatile components volatilized from the component supplier TW. When the detected amount or change in the detected amount of ions derived from the volatile components volatilized from the component supplier TW becomes a set amount or less, the control device 200 stops heating by the heating unit 70.

[0129] It is necessary to prevent the ions generated in the component detector 90 from being subjected to forces due to collisions with other molecules during the period from ionization to detection, so the component detector 90 is preferably attached to the detection port 11k of the chamber 10 via a differential pumping system in order to prevent the generated ions from colliding with other molecules.

[0130] (2) The heating unit 70 may stop heating after a predetermined time has elapsed since the start of heating in a reduced pressure atmosphere, during which the volatile components volatilize. More specifically, the time from the start of heating until the pressure detected by the pressure detector 80 or the amount of a specific component detected by the component detector 90 decreases to a level that does not affect the bonding strength is determined in advance through experiments, etc. This time is set in the control device 200 as a set time (predetermined time), and when the set time has elapsed since the start of heating, the control device 200 stops heating by the heating unit 70. This simplifies the determination process and allows the processing time to be constant. Note that heating may start when decompression begins.

[0131] (3) In the case of the embodiment in which the heating is not performed, the plasma processing apparatus 101 does not need to have the heating unit 70. In other words, the decompression device 61 may remove the volatile components volatilized from the component supplier TW simply by evacuating and reducing the pressure inside the chamber 10. This allows the structure of the plasma processing apparatus 101 to be simplified.

[0132] In this case, the pressure reducing device 61 may be controlled using the component detector 90 described above instead of the pressure detector 80. That is, the control device 200 may control each part of the plasma processing device 101 to start surface processing using plasma when the amount of a specific component detected by the component detector 90 reaches a preset amount.

[0133] Alternatively, a volatilization time required for the volatile components to volatilize to an extent that they no longer affect the bonding strength may be set as a set time in the control device 200, and when the set time has elapsed since the start of depressurization, the control device 200 may control each part of the plasma processing device 101 to start the surface treatment. In other words, the control device 200 may cause the plasma processing device 101 to start the surface treatment after the volatilization time, which is the time required for the volatilization of the volatile components to be completed, has elapsed after the start of evacuation by the depressurization device 61, and which is determined in advance by an experiment or the like.

[0134] (4) As shown in Figure 8, in addition to the heating unit 70, the chamber 10 may have an air inlet 11o, and a blower 62, a trap 63, and a supply device 64 may be connected to the air inlet 11o and the exhaust port 60. The air inlet 11o is an opening for supplying gas into the chamber 10. The supply device 64 is connected to the air inlet 11o as a supply source for supplying gas into the chamber 10. The gas supplied into the chamber 10 may be, for example, the ambient air, clean dry air (CDA), or N ２ In this embodiment, N ２ Gas is used.

[0135] The blower 62 circulates the gas supplied from the supply device 64 into the chamber 10. The blower 62 is a device that sucks in gas from one surface and sends it out from the other surface of the blower 62. The blower 62 may be any device that can move gas. For example, a fan or a pump may be used.

[0136] The trap 63 captures the volatile components that have evaporated from the component supply TW. The trap 63 has a hollow pipe shape and can capture the volatile components that have evaporated from the component supply TW inside. For example, the inside of the trap 63 can be cooled. When the volatile components that have evaporated from the component supply TW collide with the inside of the trap 63, heat is removed, causing the volatile components to sublimate (precipitate) from a gas into a solid. As a result, the volatile components adhere to the inside of the trap 63.

[0137] In this embodiment, the pressure reducing device 61, the blower 62, the supply device 64, the trap 63, the exhaust port 60, and the air inlet 11o are connected by pipes 651 to 653 and a valve 66. For example, as shown in FIG. 8 , one end of the three ends of a first T-shaped pipe 651 is connected to the exhaust port 60 via a valve 66a. Valves 66b and 66c are connected to the remaining two ends of the pipe 651. The pressure reducing device 61 is connected to the end of the pipe 651 connected to the valve 66b, and one end of the trap 63 is connected to the end connected to the valve 66c.

[0138] One end of a second T-shaped pipe 652, one of the three ends of which is connected to air supply port 11o via valve 66d. Valves 66e and 66f are connected to the remaining two ends of pipe 652. The end of pipe 652 connected to valve 66e is connected to supply device 64, and the other surface of blower 62 is connected to the end connected to valve 66f.

[0139] The other end of the trap 63 is connected to one surface of the blower 62 via a pipe 653. With the above structure, N ２ Gas supply and N ２ Gas circulation can be performed.

[0140] It should be noted that blower 62 may be connected to gas inlet 30 instead of air supply port 110. In other words, the end of pipe 652 may be connected to gas inlet 30 via valve 66d. In this case, there is no need to provide air supply port 110.

[0141] Next, the operation of the plasma processing apparatus 101 in this embodiment will be described. First, it is assumed that the component supplier TW has been loaded into the chamber 10 in advance and supported by the stage 20, and that all of the valves 66 are closed. The control device 200 opens the valves 66a and 66b and starts exhausting the gas from the chamber 10 using the pressure reducing device 61. After exhausting the gas from the chamber 10, it closes the valves 66a and 66b. At this time, the mask 50 is in the raised position where it is separated from the sheet T by a maximum distance.

[0142] Next, the valves 66d and 66e are opened, and N is introduced into the chamber 10 by the supply device 64. ２ N gas is supplied until the pressure inside the chamber 10 becomes the same as atmospheric pressure. ２ After the gas is supplied, valves 66d and 66e are closed and heating is started by heating unit 70. When the heating temperature reaches a preset temperature, control device 200 opens valves 66a, 66c, 66d, and 66f and starts blower 62.

[0143] When the heating temperature reaches a preset temperature (for example, 40 to 200° C.), the volatile components begin to volatilize from the component supplier TW. That is, the volatile components volatilized from the component supplier TW fly out into the chamber 10 as gas.

[0144] When this volatilization begins, the control device 200 opens valves 66a, 66c, 66d, and 66f and operates the blower 62, thereby starting the circulation of gas within the chamber 10. The volatile components volatilized from the component supplier TW are captured by the trap 63. The gas within the chamber 10 is exhausted from the chamber 10, and after the volatile components are removed, it is sent back into the chamber 10. By circulating the gas within the chamber 10 in this manner, the volatile components are captured and gradually removed from the gas within the chamber 10. In this case, the blower 62 and the trap 63 function as an exhaust device that removes the volatile components volatilized from the component supplier TW.

[0145] The removal of such volatile components is carried out for a predetermined time. The predetermined time can be determined in advance through experiments or the like to be a time required for the volatile components to be removed to an extent that does not affect the bonding strength. This determined time is set in the control device 200 as the predetermined time. The control device 200 stops the circulation after the predetermined time and exhausts the gas in the chamber 10 to the outside of the chamber 10. In other words, when the predetermined time has elapsed, the control device 200 stops the blower 62 and closes valves 66c, 66d, and 66f. Next, valves 66a and 66b are opened, and the gas in the chamber 10 is exhausted by the pressure reducing device 61.

[0146] As described above, in this embodiment, the gas in the chamber 10 is heated and circulated to remove volatile components from the component supply TW. After the predetermined time has elapsed, the gas circulation and heating are stopped. Then, the plasma surface treatment is started. That is, the pressure in the chamber 10 is reduced, a reactive gas is introduced, and the pressure is adjusted to the pressure required for the surface treatment. Then, plasma is generated and the surface treatment is performed for a predetermined time (t0). After the surface treatment is completed, the chamber 10 is returned to the atmospheric atmosphere, and the component supply TW is removed from the chamber 10.

[0147] According to this embodiment, even without a reduced pressure, the component supply TW is heated to promote the volatilization of the volatile components from the component supply TW, and the volatile components can be removed efficiently. ２The amount of gas used can be reduced.

[0148] The endpoint (predetermined time) for removing the volatile components is preferably set so that the removal of the volatile components is completed reliably to an extent that does not affect the bonding, and can be completed in the shortest time possible. In this embodiment, this endpoint is referred to as the second volatilization time. The second volatilization time is determined, for example, as follows.

[0149] The second volatilization time is set based on the exhaust time t1 from the start of depressurization until pressure Ep1 is reached in the embodiment described above in which volatile components are removed by depressurizing while heating. Pressure Ep1 is the pressure at the position indicated by the white circle on the solid line in Figure 5(C), and is the endpoint pressure when heat is applied to the component supplier TW in a depressurized atmosphere. In this embodiment, this pressure Ep1 and the exhaust time t1 from the start of depressurization until pressure Ep1 is reached are also calculated in advance. The calculated pressure Ep1 and exhaust time t1 are stored in the control device 200.

[0150] Additionally, an arbitrary heating time for heating the gas supplied into chamber 10 while circulating it is stored in control device 200. For example, the heating time is set to the exhaust time t1 plus 30 seconds. Control device 200 then performs heating for this arbitrary heating time. After heating, the gas in chamber 10 is exhausted. The pressure reached at exhaust time t1 after exhaust begins is detected by pressure detector 80, and this ultimate pressure is stored in control device 200.

[0151] Next, the control device 200 compares the ultimate pressure with the pressure Ep1. If the ultimate pressure is equal to or less than the pressure Ep1, the amount of volatile components volatilized from the component supplier TW has decreased to an amount that will not cause problems during the mounting process. Therefore, the control device 200 stores the arbitrary heating time as the second volatilization time.

[0152] If the ultimate pressure is higher than pressure Ep1, the control device 200 resets the arbitrary heating time to a longer time. For example, it adds 30 seconds to the current arbitrary heating time and stores it as a new arbitrary heating time. Then, for the reset heating time, it performs heating on another component supplier TW while circulating the gas supplied into the chamber 10, and again compares the ultimate pressure at exhaust time t1 with pressure Ep1. The control device 200 repeats this process until the ultimate pressure becomes equal to or lower than pressure Ep1.

[0153] Note that if the ultimate pressure in the initial measurement is equal to or lower than pressure Ep1, the heating time may be excessive. Therefore, for example, if the ultimate pressure is 10% or more lower than pressure Ep1, it is preferable to optimize the heating time in the same way as when the ultimate pressure is higher than pressure Ep1. Specifically, a time 30 seconds shorter than the arbitrary heating time is re-stored as the arbitrary heating time, a heating process is performed on a different component supplier TW, the ultimate pressure at exhaust time t1 is measured, and the ultimate pressure is compared with pressure Ep1. The control device 200 repeats this process until the ultimate pressure is within 10% of pressure Ep1. If the ultimate pressure exceeds pressure Ep1, the optimal heating time is determined by adding 30 seconds, for example, 15 seconds, to the heating time.

[0154] In the above example, the specified width of the pressure for optimization is set to 10%, but this value can be set by finding the optimum value through experiments or the like.

[0155] In the above description, the ultimate pressure is compared with the pressure Ep1, but the time from the start of exhaust until the pressure Ep1 is reached may be measured and compared with the exhaust time t1. In this case, too, the arbitrary heating time (second volatilization time) to be determined can be optimized, as described above.

[0156] In this way, by determining the second volatilization time (endpoint) and circulating the gas based on this second volatilization time to perform the volatile component removal process, the removal process can be performed efficiently without having to reduce the pressure to near Ep1 and measure the pressure each time.

[0157] A component detector 90 such as that described above may be provided, and when the amount of a specific component in the circulating gas reaches a predetermined set amount (end point), it may be determined that the volatilization time has been secured, and heating may be stopped by the heating section 70.

[0158] (5) In the above-described embodiment, the mask 50 of the plasma processing apparatus 101 is configured to be supported from below and to be raised and lowered. However, the mask 50 may be supported from above and to be raised and lowered. The plasma processing apparatus 101 may also be configured without the mask 50.

[0159] (6) The plasma processing apparatus 101 may be provided with an irradiation device 72 that irradiates the component supplier TW with UV light, and the component supplier TW may be irradiated with UV light during and / or after the volatile component removal process. This allows the volatile components attached to the surface of the wafer W to be decomposed and removed. Furthermore, when UV light is irradiated during the volatile component removal process, it is possible to easily decompose and remove the volatile components that volatilize, and further, it is possible to prevent the volatile components from re-adhering to the wafer W.

[0160] 9, multiple irradiation devices 72 may be provided in the upper part of the chamber 10. In this case, the irradiation devices 72 are preferably provided near the sidewall of the chamber 10 and at a position away from the plasma P. When UV light is irradiated onto the wafer W during and / or after the devolatilization process, the mask 50 is raised to a position at the maximum distance from the sheet T. This makes it easier for the UV light to reach the sheet T through gaps in the raised mask 50.

[0161] (7) The heaters of the heating unit 70 may be in the form of multiple cylinders or disks. Alternatively, multiple ring-shaped heaters with different diameters may be arranged concentrically. The ring-shaped heaters may be arranged in positions corresponding to the exposed portions of the sheet T. In this way, by arranging the heaters only in the exposed portions of the sheet T where the area from which the volatile components volatilize is large, the configuration can be simplified and power consumption can be reduced.

[0162] (8) Heating lamps may be provided instead of the heating unit 70. For example, a plurality of heating lamps may be provided in the upper part of the chamber 10, such as the irradiation device 72. Of course, the plasma processing apparatus 101 may be provided with both the heating unit 70 that heats the component supply body TW and the irradiation device 72 that irradiates the component supply body TW with UV light, or both the heating unit 70 and the irradiation device 72 may be configured to heat the component supply body TW.

[0163] (9) The heating temperature of the component supplier TW may be measured by a temperature detector 74. The temperature detector 74 is, for example, a thermocouple. As shown in FIG. 9 , the temperature detector 74 is inserted into the chamber 10 from the side of the chamber 10. The tip of the temperature detector 74 is disposed in a position between the stage 20 and the mask 50. For example, the tip of the temperature detector 74 is disposed near the ring R of the component supplier TW so as not to interfere with the support shaft 50a, the stopper 11f, the rods 21a, 21b, and the robot hand 191a.

[0164] (10) In the above-described embodiment, the pressure at the point when the slope of the pressure change switches is defined as the set pressure (endpoint). However, the end point may also be set based on the pressure change per unit time (ΔP / Δt). For example, the control device 200 stores the pressure change when there is no component supplier TW. The control device 200 then correlates the pressure in the chamber 10 with the pressure change per unit time (ΔP / Δt) at that pressure based on the stored data. Thereafter, in step S100, the control device 200 monitors the pressure in the chamber 10 and the pressure change per unit time (ΔP / Δt) at that pressure. The control device 200 compares the stored pressure change per unit time (ΔP / Δt) with the monitored pressure change per unit time (ΔP / Δt), and determines that the end point has been reached when the difference in the pressure change is equal to or less than a threshold value.

[0165] (11) The control device 200 may determine that the volatilization of volatile components from the component supplier TW is complete when the rate of pressure decrease detected by the pressure detector 80 from the start of exhaust decreases from immediately after the start of exhaust and then increases. For example, as shown in FIG. 5C , the rate of pressure decrease increases immediately after the start of decompression and then decreases. The point at which the rate of decrease further increases thereafter may be set as the endpoint. Alternatively, the point at which the rate of change increases after observing minute vibrations in the pressure fluctuation may be set as the endpoint.

[0166] (12) In an embodiment in which gas is circulated by the air blower 62 in addition to heating by the heating unit 70, after heating by the heating unit 70 is stopped upon completion of volatilization of the volatile components, the chamber 10 may be ventilated and cooled by circulating the gas by the air blower 62 and / or exhausting the gas by the pressure reducing device 61 while supplying gas by the supply device 31 or 64 for a certain period of time, thereby promoting the discharge of the volatile components. During heating by the heating unit 70, the pressure may be reduced without circulating the gas, and after heating by the heating unit 70 is stopped upon completion of volatilization of the volatile components, a reactive gas or an inert gas may be introduced to achieve surface pressure, and cooling may be performed by circulating and / or exhausting the gas by the air blower 62 for a certain period of time. When a reactive gas is introduced, the chamber may be cooled by circulation and / or exhaust for a certain period of time, after which the chamber may be cooled by circulation and / or exhaust. This improves throughput. When an inert gas is introduced, the chamber may be cooled by circulation and / or exhaust for a certain period of time, after which a reactive gas may be introduced and the chamber may be cooled by circulation and / or exhaust.

[0167] (13) In the plasma processing apparatus 101, pressure reduction is not required when volatilizing and removing volatile components. That is, before starting plasma surface treatment, gas is introduced and heated by the heating unit 70 to volatilize the volatile components from the component supply body TW. At this time, exhausting by the pressure reduction device 61 may be performed, or the volatilized volatile components may be captured and removed by the trap 63 while circulating the gas by the blower 62. The point at which the amount of a specific component detected by the component detector 90 reaches a predetermined set value is set as the endpoint, and heating by the heating unit 70 and circulation by the blower 62 are stopped. Thereafter, pressure reduction is initiated, and when the base pressure is reached, plasma surface treatment is initiated.

[0168] Even in this embodiment, after heating by the heating unit 70 is stopped, gas may be supplied by the supply device 31 or 64 for a certain period of time, while circulating the gas by the blower 62 and / or exhausting the gas by the pressure reducing device 61. This may ventilate and cool the chamber 10, thereby promoting the removal of volatile components. In this case, the endpoint is a certain time from when the amount of a specific component detected by the component detector 90 reaches a predetermined set amount. This allows for further removal of volatile components in the chamber 10 during surface treatment, thereby enabling sufficient surface treatment. In this case, because the temperature of the component supply body TW is low during surface treatment, even if volatile components remain, they are prevented from volatilizing due to heating during surface treatment.

[0169] (14) In a mode in which heating is performed by the heating unit 4, even when the end point is reached, the cessation of heating may be delayed by a preset time to ensure time for volatilization. This can further reduce the volatile components in the chamber 10, more reliably suppress re-adhesion of the volatile components, and make insufficient surface treatment less likely. Note that, instead of delaying the cessation of heating from the end point, a certain tolerance may be added to the end point. For example, the end point may be set by adding a certain margin to the detected values ​​of pressure and component amount to more reliably complete volatilization.

[0170] (15) In the above-described embodiment, the mounting system 100 includes one bonding apparatus 180, but this is not limiting. As shown in Fig. 10, the mounting system 100 may include a plurality of bonding apparatuses 180 in the mounting unit Y. The number of bonding apparatuses 180 in the mounting unit Y can be determined according to the takt time determined from the component supplier TW, the size of the mounting board BW, the required processing time, etc., and increasing the number of bonding apparatuses 180 can improve efficiency.

[0171] In this way, when multiple bonding devices 180 are provided in the mounting section Y, as shown in Figure 10, a base 11m can be provided in the mounting section Y, and the multiple bonding devices 180 can be arranged so as to be connected to the periphery of the base 11m. Although two bonding devices 180 are shown in Figure 10, the number of bonding devices 180 connected is not limited and may be one, three, or more. Furthermore, a transport device 190α may be provided inside the base 11m, separate from the transport device 190, for distributing, supplying, and collecting component suppliers TW and mounting boards BW to each bonding device 180. Multiple transport devices 190α may be provided as necessary.

[0172] Furthermore, a buffer device 11n capable of storing the component supplier TW and the mounting board BW may be provided inside the base body 11m.

[0173] The buffer apparatus 11n may store pre-processed component supply items TW and mounting boards BW without storing them in the supply item buffer apparatus 160 and mounting board buffer apparatus 170 of the mounting pre-processing section X. Also, the buffer apparatus 11n may store component supply items TW and mounting boards BW that have been subjected to the mounting process.

[0174] 10, a dedicated transport device 190β may be provided at the load port 11c. Alternatively, a supply buffer device 160 and a mounting substrate buffer device 170 may be provided on the load port 11c side of the base 11a, and the component supply items TW and mounting substrates BW transported by the transport device 190β may be stored in these supply buffer devices 160 and mounting substrate buffer devices 170. The component supply items TW and mounting substrates BW stored in these supply buffer devices 160 and mounting substrate buffer devices 170 may be transported to each chamber 11b by the transport device 190.

[0175] The buffer device 11n may be a storehouse capable of storing a plurality of component suppliers TW and mounting boards BW. The storehouses may be stacked at intervals to store the component suppliers TW and mounting boards BW.

[0176] The buffer device 11n may store pre-processed component supplies TW and mounting boards BW that are about to undergo mounting, or may store component supplies TW and mounting boards BW that have already undergone mounting processing.

[0177] Furthermore, a plurality of buffer devices 11n may be provided within the base body 11m.

[0178] The buffer apparatus 11n may be a mounting table capable of holding only one component supplier TW or one mounting board BW. In this case, the component supplier TW or one mounting board BW waiting to be mounted is stored in the supplier buffer apparatus 160 or one mounting board buffer apparatus 170, as in the above-described embodiment. The buffer apparatus 11n may also be a storehouse capable of storing a plurality of component suppliers TW or one mounting board BW. In this case, the component suppliers TW or one mounting board BW may be stored in a stacked manner, similar to the supplier buffer apparatus 160 or one mounting board buffer apparatus 170.

[0179] Furthermore, one transport device 190 may distribute the component suppliers TW and the mounting boards BW to each of the multiple bonding devices 180. In this case, the transport device 190 may be provided inside the base body formed by combining the base body 11a and the base body 11m.

[0180] (16) As described above, the mounting unit Y may be provided with the base 11m, and the mounting unit Y and the pre-mounting processing unit X may be separate and separable. In other words, the mounting system 100 may be configured so that the mounting unit Y and the pre-mounting processing unit X are independent of each other. The pre-mounting processing unit X may be configured to include a removal device. In this case, the control device 200 may control both the pre-mounting processing unit X and the mounting unit Y provided separately from it, or separate control devices may be provided to control each of them.

[0181] Even in the various modified examples described above, it is possible to achieve narrow connection terminal spacing that was previously impossible due to contact between mounting components made of bumps of solder, gold, copper, aluminum, etc. on the connection terminals, thereby making it possible to create a high-density package.

[0182] [Other Embodiments] While the embodiments of the present invention and modifications of each part have been described above, these embodiments and modifications of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be embodied in various other forms, and various omissions, substitutions, modifications, and combinations can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included within the scope and spirit of the invention, and are also included in the invention described in the claims.

[0183] 11a, 11m substrate 11b chamber 11c load port 11d window member 11e hole 11f stopper 11j, 11k detection port 11o gas supply port 11n buffer device 10 chamber 20 stage 21 drive unit 21a, 21b rod 21c drive mechanism 30 gas inlet 31 supply device 31a piping 40 plasma generator 41 antenna 42 power supply 43 matching box 50 mask 50a support shaft 51 drive unit 51a rod 51b drive mechanism 60 exhaust port 61 pressure reducing device 61a piping 62 blower 63 trap 64 supply device 651, 652, 653 piping 66, 66a to 66f valve 70 heating unit 71 Cooling device 72 Irradiation device 74 Temperature detector 80 Pressure detector 90 Component detector 92 Window 100 Mounting system 101 Plasma processing device 110 Supply body cleaning device 111 Cleaning chamber 111a Opening 111b Shutter 112 Support unit 113 Rotation mechanism 114 Cup 115 Supply unit 115a Nozzle 115b Moving mechanism 120 Mounting substrate cleaning device 130 Adjustment processing device 131 Irradiation device 140 Gauging device 150 Alignment device 160 Supply body buffer device 161 Storage 170 Mounting substrate buffer device 171 Storage 180 Bonding device 190, 190α, 190β Transport device 191 Transport robot 191a Robot hand 192 Moving mechanism 200 Control device 300 Pre-mounting processing device TW Component supply body BW Mounting board X Pre-mounting processing section Y Mounting section

Claims

1. A plasma processing apparatus for performing surface treatment using plasma on the bonding surfaces of electronic components and a mounting substrate before mounting the electronic components on the mounting substrate, comprising: a stage for supporting a component supply body having a sheet with an adhesive portion on its surface supported by a ring, the component supply body having the electronic components adhered to the sheet; a chamber in which the stage is provided and the interior of which can be depressurized; an exhaust port for evacuating the chamber; a gas inlet port for introducing a reactive gas into the depressurized chamber; a plasma generator for converting the reactive gas into plasma; and a control device for determining that volatilization of volatile components from the component supply body has been completed while the chamber is being depressurized, and for causing the reactive gas to be introduced from the gas inlet and the plasma generator to convert the reactive gas into plasma based on the determination.

2. A plasma processing apparatus as described in claim 1, characterized in that it has a pressure detector that detects the pressure inside the chamber, and the control device determines that the volatilization of volatile components from the component supply body has been completed when the pressure detected by the pressure detector reaches a predetermined pressure or pressure change amount.

3. A plasma processing apparatus as described in claim 1, characterized in that it has a pressure detector that detects the pressure inside the chamber, and the control device determines that the volatilization of volatile components from the component supply body has been completed when the rate of pressure decrease from the start of exhaust detected by the pressure detector decreases immediately after the start of exhaust and then increases.

4. A plasma processing apparatus as described in claim 1, characterized in that it has a component detector that detects the amount of a specific component in the gas within the chamber, and the control device determines that the volatilization of volatile components from the part supply has been completed when the amount of the specific component detected by the component detector or the change in the amount of the specific component becomes a predetermined set amount or is below the set amount.

5. The plasma processing apparatus according to claim 1, characterized in that the stage is provided with a heating unit that heats the component supply body, and the control device starts heating by the heating unit when the chamber starts to be depressurized, and stops heating by the heating unit based on the judgment.

6. The plasma processing apparatus according to claim 1, characterized in that the chamber has an air inlet for supplying gas into the chamber, and the air inlet and the exhaust port are connected to a blower for circulating the gas supplied into the chamber and a trap for capturing volatile components volatilized from the component supply body.

7. A plasma processing apparatus as described in claim 1, characterized in that the gas inlet and the exhaust port are connected to a blower for circulating the gas supplied into the chamber and a trap for capturing volatile components evaporated from the component supply body.

8. A plasma processing apparatus as described in claim 1, characterized in that it has a mask provided within the chamber, exposing the electronic components and covering the ring and a portion of the sheet, and the control device keeps the mask at a maximum distance from the sheet until it is determined that the volatilization of the volatile components from the component supplier has been completed, and keeps the mask at a minimum distance from the sheet when it is determined that the volatilization of the volatile components from the component supplier has been completed.

9. A pre-mounting processing device comprising: a plasma processing device according to any one of claims 1 to 8; a load port for loading and unloading the component supply body and the mounting substrate; a supply body cleaning device for cleaning the component supply body; a mounting substrate cleaning device for cleaning the mounting substrate; and a transport device for transporting the component supply body.

10. A mounting system comprising: a pre-mounting processing device according to claim 9; and a bonding device that detaches the electronic components processed by the pre-mounting processing device from the component supply body and mounts them on a mounting board.

11. A pre-mounting treatment method for performing pre-mounting treatment of the bonding surface between an electronic component and a mounting board before mounting the electronic component on the mounting board, the pre-mounting treatment method comprising: a carrying-in process for carrying into a chamber a component supply body having a sheet with an adhesive portion on its surface supported by a ring, with the electronic component adhered to the sheet; a determination process for determining, while the chamber into which the component supply body has been carried is being depressurized, that volatilization of volatile components from the component supply body has been completed; a reactive gas introduction process for introducing a reactive gas from a gas inlet based on the determination process; and a surface treatment for treating the surface of the component supply body with plasma by converting the reactive gas into plasma using a plasma generator.

12. The pre-mounting processing method according to claim 11, wherein the determination process determines whether or not the volatilization of the volatile components from the component supply body has been completed based on the pressure or pressure change amount within the chamber.

13. A pre-mounting processing method as described in claim 11, characterized in that the judgment process determines that the volatilization of volatile components from the component supply body has been completed when the rate of pressure decrease from the start of exhaust in the chamber decreases immediately after the start of exhaust and then increases.

14. A pre-mounting processing method as described in claim 11, characterized in that the judgment process determines that the volatilization of volatile components from the component supply body has been completed when the amount of a specific component in the gas in the chamber reaches a predetermined set amount.

Images