Substrate processing device and thin film formation method

Abstract

The present invention relates to a substrate processing device and a thin film formation method, the device comprising: a chamber; a heater arranged inside the chamber; a lifting unit for lifting / lowering the heater; a substrate support inserted to be liftable / lowerable with respect to the heater; a substrate support lifting unit for lifting / lowering the substrate support; and an injection unit for injecting gas into the inside of the chamber, wherein the substrate support supports the substrate such that the bottom surface of the substrate is spaced apart from the top surface of the heater, and the injection unit exposes the substrate to the gas in a state in which the bottom surface of the substrate loaded on the substrate support is spaced apart from the top surface of the heater.

Description

Substrate processing device and thin film formation method

[0001] The present invention relates to a substrate processing device and a thin film forming method for performing a substrate processing process such as a deposition process.

[0002] In general, in order to manufacture semiconductor devices, display devices, solar cells, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. To this end, substrate processing processes are performed, such as a deposition process for depositing a thin film of a specific material on a substrate, a photo process for selectively exposing the thin film using a photosensitive material, and an etching process for removing the thin film in the selectively exposed portion to form a pattern. These substrate processing processes can be performed by a substrate processing device.

[0003] Recently, there has been active development of technology to realize high integration, miniaturization, and thinness by forming thin films not only on the upper part of the substrate but also on the lower part of the substrate, and connecting the thin films formed on the upper part of the substrate and the thin films formed on the lower part of the substrate through via holes.

[0004] However, since the substrate processing device according to the prior art performs the process of forming a thin film on the substrate while the lower part of the substrate is in contact with the susceptor, there is a problem in that it is difficult to form a thin film on the lower part of the substrate in order to achieve high integration, miniaturization, thinning, etc.

[0005] The present invention has been devised to solve the above-described problem, and provides a substrate processing device and a thin film forming method capable of forming a thin film on the upper part and the lower part of a substrate, and forming a thin film connecting the thin film formed on the upper part of the substrate and the thin film formed on the lower part of the substrate.

[0006] In order to solve the above-described problem, the present invention may include the following configuration.

[0007] A substrate processing device according to the present invention may include a chamber; a heater disposed inside the chamber; an elevating unit for raising and lowering the heater; a substrate support inserted so as to be raised and lowered relative to the heater; a substrate support elevating unit for raising and lowering the substrate support; and an injection unit for injecting gas into the chamber. The substrate support may support the substrate such that a bottom surface of the substrate is spaced apart from an upper surface of the heater. The injection unit may expose the substrate loaded on the substrate support to the gas in a state in which the bottom surface of the substrate is spaced apart from an upper surface of the heater.

[0008] Here, the substrate support preferably includes a plurality of pins or jigs, but may be capable of supporting the substrate by contacting the lower portion of the substrate at a plurality of points, and its specific shape is not limited. Furthermore, a through hole may be formed in the substrate.

[0009] A thin film forming method according to the present invention may include a step of introducing a substrate into a chamber; a step of loading the substrate onto a substrate support; and a step of exposing the substrate loaded onto the substrate support to gas.

[0010] A thin film forming method according to the present invention may include the steps of: introducing a substrate into a chamber; loading the substrate onto a substrate support positioned at a first height; changing the substrate loaded onto the substrate support positioned at the first height to a position at a second height; and exposing the substrate loaded onto the substrate support positioned at the second height to gas.

[0011] In the thin film forming method according to the present invention, the step of exposing the substrate to a gas may include the step of supplying a source gas to the substrate; and the step of supplying a reactant gas to the substrate. Preferably, the source gas or the reactant gas may be supplied to the upper surface of the substrate, the interior of the through hole, and the lower surface.

[0012] In the thin film forming method according to the present invention, the step of exposing the substrate to a gas may supply a reactant gas after supplying a source gas to an upper peripheral portion disposed around the through hole on the upper surface of the substrate, an inner portion of the substrate disposed within the through hole, and a lower peripheral portion disposed around the through hole on the lower surface of the substrate.

[0013] In the thin film formation method according to the present invention, the source gas may include ruthenium (Ru), and the reactant gas may include oxygen (O2).

[0014] In the thin film forming method according to the present invention, the first height and the second height may be at different positions or the second height may be at a position higher or lower than the first height.

[0015] In the thin film forming method according to the present invention, a heater is included in the chamber, and the substrate can be exposed to gas at a distance from the heater. The heater may be built into a susceptor that supports the substrate.

[0016] The thin film forming method according to the present invention includes an injection unit that injects gas into the chamber, wherein a distance (D) between the lower surface of the substrate and the heater can be adjusted to be less than or equal to a distance (T) between the upper surface of the substrate and the injection unit. Furthermore, the distance (D) between the lower surface of the substrate and the heater can be adjusted to be greater than or equal to a distance (T) between the upper surface of the substrate and the lower surface of the injection unit.

[0017] A thin film forming method according to the present invention may include the steps of: introducing a substrate into a chamber; loading the substrate onto a heater; adjusting the distance between the substrate and the heater; and exposing the substrate to gas while maintaining the distance from the heater. Here, adjustment refers to an operation of changing the height through raising or lowering.

[0018] A thin film forming method according to the present invention may include the steps of: introducing a substrate into a chamber; loading the substrate onto a substrate support protruding above a heater; raising the heater and the substrate support; stopping the elevation of the substrate support and further raising the heater; and stopping the elevation of the heater and exposing the substrate loaded onto the substrate support to gas while the lower surface of the substrate is spaced apart from the upper surface of the heater.

[0019] In the thin film forming method according to the present invention, the step of additionally raising the heater can adjust the distance between the lower surface of the substrate loaded on the substrate support and the upper surface of the heater by adjusting the height at which the heater is additionally raised.

[0020] In the thin film forming method according to the present invention, the step of exposing the substrate to gas may supply gas to an upper peripheral portion disposed around the through hole on the upper surface of the substrate, an inner portion of the substrate disposed within the through hole, and a lower peripheral portion disposed around the through hole on the lower surface of the substrate.

[0021] In the thin film forming method according to the present invention, the step of exposing the substrate to gas may include the step of supplying a source gas to the upper peripheral portion, the inner portion, and the lower peripheral portion; and the step of supplying a reactant gas to the upper peripheral portion, the inner portion, and the lower peripheral portion.

[0022] In the thin film forming method according to the present invention, the step of supplying the source gas may supply a source gas containing ruthenium (Ru). The step of supplying the reactant gas may supply a reactant gas containing oxygen (O2).

[0023] According to the present invention, the following effects can be achieved.

[0024] The present invention is implemented to perform a processing process on a substrate by exposing the substrate to a gas while the bottom surface of the substrate loaded on a substrate support is spaced apart from the top surface of the heater. Accordingly, the present invention can supply a portion of the gas between the bottom surface of the substrate and the top surface of the heater through a through hole formed in the substrate, can supply a portion of the gas to the inner surface of the substrate through the through hole formed in the substrate, and can supply a portion of the gas to the top surface of the substrate. Accordingly, the present invention can improve the ease of a processing process for forming a thin film in which an upper thin film formed on the top surface of the substrate and a lower thin film formed on the bottom surface of the substrate are connected through a connecting thin film formed in the through hole, and thus can contribute to realizing high integration, miniaturization, thinning, etc.

[0025] Figure 1 is a schematic diagram of a substrate processing device according to the present invention.

[0026] Figures 2 and 3 are schematic side cross-sectional views of the injection unit in the substrate processing device according to the present invention.

[0027] Figure 4 is a schematic side cross-sectional view showing a thin film formed on a substrate using a substrate processing device and a thin film forming method according to the present invention.

[0028] Figure 5 is a schematic diagram of a substrate processing device according to the present invention.

[0029] Figures 6 to 8 are schematic cross-sectional views showing an enlarged portion of part A of Figure 5 based on line II of Figure 5.

[0030] Figures 9 to 12 are schematic flowcharts of a thin film forming method according to the present invention.

[0031] Hereinafter, an embodiment of a substrate processing device according to the present invention will be described in detail with reference to the attached drawings.

[0032] Referring to Fig. 1, a substrate processing device (1) according to the present invention performs a processing process on a substrate (200). The substrate (200) may be a silicon substrate, a glass substrate, a metal substrate, or the like. The substrate processing device (1) according to the present invention may perform a deposition process, such as depositing a thin film on the substrate (200).

[0033] Referring to FIG. 1, the substrate processing device (1) according to the present invention may include a chamber (2).

[0034] The chamber (2) above can provide a processing space (100). In the processing space (100), a processing process for the substrate (200) can be performed. The processing space (100) can be arranged inside the chamber (2). An exhaust port (not shown) for exhausting gas or the like from the processing space (100) can be coupled to the chamber (2).

[0035] Referring to Fig. 1, a substrate processing device (1) according to the present invention may include a heater (3). The heater (3) may be built into a susceptor that supports a substrate.

[0036] The heater (3) can support the substrate (200). The heater (3) can support one substrate (200) or multiple substrates (200). When multiple substrates (200) are loaded onto the heater (3), processing processes can be performed on multiple substrates (200) at once. The heater (3) can be coupled to the chamber (2). The heater (3) can be placed inside the chamber (2). The heater (3) can be a susceptor.

[0037] Referring to FIGS. 1 to 3, the substrate processing device (1) according to the present invention may include a spraying unit (4).

[0038] The above-described injection unit (4) can inject gas. The injection unit (4) can be arranged inside the chamber (2). The injection unit (4) can be arranged to face the heater (3). The injection unit (4) can be arranged above the heater (3). The processing space (100) can be arranged between the injection unit (4) and the heater (3). The injection unit (4) can be coupled to a lid (not shown). The lid can be coupled to the chamber (2) so as to cover the upper portion of the chamber (2).

[0039] The above injection unit (4) may include a first gas path (4a) and a second gas path (4b).

[0040] The first gas path (4a) can inject the first gas. The first gas path (4a) can be connected to the processing space (100). Accordingly, the first gas can flow along the first gas path (4a) and then be injected into the processing space (100) through the first gas path (4a). The first gas path (4a) can function as a path for the first gas to flow and also as an injection port for injecting the first gas into the processing space (100).

[0041] The second gas path (4b) can inject a second gas. The second gas and the first gas may be different gases. For example, when the first gas is a source gas, the second gas may be a reactant gas. The second gas path (4b) may be connected to the processing space (100). Accordingly, the second gas may flow along the second gas path (4b) and then be injected into the processing space (100) through the second gas path (4b). The second gas path (4b) may function as a path for the second gas to flow and also as an injection port for injecting the second gas into the processing space (100).

[0042] The second gas path (4b) and the first gas path (4a) may be arranged to be spatially separated from each other. Accordingly, the second gas supplied to the second gas path (4b) may be injected into the processing space (100) without passing through the first gas path (4a). The first gas supplied to the first gas path (4a) may be injected into the processing space (100) without passing through the second gas path (4b). The second gas path (4b) and the first gas path (4a) may inject gases toward different parts of the processing space (100).

[0043] For example, as shown in FIG. 2, the injection unit (4) may include a first plate (41) and a second plate (42).

[0044] The first plate (41) may be arranged on the upper side of the second plate (42). The first plate (41) and the second plate (42) may be arranged to be spaced apart from each other. A plurality of first gas holes (411) may be formed in the first plate (41). Each of the first gas holes (411) may function as a passage for the first gas to flow. The first gas holes (411) may belong to the first gas path (4a). A plurality of second gas holes (412) may be formed in the first plate (41). Each of the second gas holes (412) may function as a passage for the second gas to flow. The second gas holes (412) may belong to the second gas path (4b). A plurality of protruding members (413) may be combined with the first plate (41). The protruding members (413) may protrude from the lower surface of the first plate (41) toward the second plate (42). Each of the first gas holes (411) may be formed by penetrating the first plate (41) and the protruding members (413).

[0045] A plurality of openings (421) may be formed in the second plate (42). The openings (421) may be formed by penetrating the second plate (42). The openings (421) may be arranged at positions corresponding to the respective protruding members (413). As illustrated in FIG. 2, the protruding members (413) may be formed to have a length such that they are inserted into each of the openings (421). Although not illustrated, the protruding members (413) may also be formed to have a length such that they are arranged above each of the openings (421). The protruding members (413) may also be formed to have a length such that they protrude downward from the second plate (42). The second gas holes (412) may be arranged to inject gas toward the upper surface of the second plate (42). Although not shown, the lower surface of the first plate (41) may be formed flat without the protruding member (413).

[0046] For example, as illustrated in FIG. 3, a plurality of first openings (422) and a plurality of second openings (423) may be formed in the second plate (42).

[0047] The first openings (422) may be formed by penetrating the second plate (42). The second openings (423) may be formed by penetrating the second plate (42). The second plate (42) and the first plate (41) may be arranged to be spaced apart from each other. The lower surface of the first plate (41) facing the second plate (42) may be formed flat without the protruding member (413, illustrated in FIG. 2). The first gas and the second gas may be supplied to the space between the first plate (41) and the second plate (42) through the first gas holes (411) and the second gas holes (412), and then sprayed into the processing space (100) through the first openings (422) and the second openings (423). In this case, when the supply of the first gas through the first gas holes (411) and the supply of the second gas through the second gas holes (412) are performed simultaneously, the first gas and the second gas can be mixed in the space between the first plate (41) and the second plate (42) and then sprayed into the processing space (100) through the first openings (422) and the second openings (423).

[0048] Meanwhile, the first openings (422) may be arranged vertically below each of the first gas holes (411). In this case, the first openings (422) and the first gas holes (411) may be arranged on the same vertical line. Although not shown, the first openings (422) and the first gas holes (411) may be arranged at staggered positions. In this case, the first openings (422) and the first gas holes (411) may be arranged at positions where they do not overlap each other, or may be arranged at positions where they only partially overlap each other.

[0049] Meanwhile, the second openings (423) may be arranged vertically below each of the second gas holes (412). In this case, the second openings (423) and the second gas holes (412) may be arranged on the same vertical line. Although not shown, the second openings (423) and the second gas holes (412) may be arranged at staggered positions. In this case, the second openings (423) and the second gas holes (412) may be arranged at positions where they do not overlap each other, or may be arranged at positions where they only partially overlap each other.

[0050] Meanwhile, the injection unit (4) can form plasma using the second plate (42) and the first plate (41). In this case, plasma power, such as RF power, may be applied to the first plate (41), and the second plate (42) may be grounded. The first plate (41) may be grounded, and plasma power may be applied to the second plate (42).

[0051] Referring to FIGS. 1 to 5, a substrate processing device (1) according to the present invention can be implemented to form a thin film (300) on a bottom surface (220) of the substrate (200), an upper surface (230) of the substrate (200), and an inner surface of the substrate (200) located inside the through hole (210) by using a through hole (210) formed in the substrate (200). The through hole (210) can be formed by penetrating the substrate (200). A plurality of the through holes (210) may be formed in the substrate (200). In this case, the through holes (210) can be arranged at positions spaced apart from each other. The substrate processing device (1) according to the present invention may be implemented to form the thin film (300) on a lower peripheral portion (220a) arranged around the through hole (210) on the lower surface (220) of the substrate (200), an upper peripheral portion (230a) arranged around the through hole (210) on the upper surface (230) of the substrate (200), and an inner portion (240) of the substrate (200) arranged within the through hole (210). The peripheral portion of the through hole (210) on the lower peripheral portion (220a) means a range spaced outward from the through hole (210) on the lower surface (220) of the substrate (200) by a preset distance, and may be determined according to specifications required by a user. The periphery of the through hole (210) in the upper surface periphery (230a) refers to a range spaced outward from the through hole (210) at a preset distance on the upper surface (230) of the substrate (200), and can be determined according to the specifications requested by the user.

[0052] The substrate processing device (1) according to the present invention can form a lower thin film (310) on the lower peripheral portion (220a), an upper thin film (320) on the upper peripheral portion (230a), and a connecting thin film (330) on the inner portion (240) by performing a processing process on the substrate (200). The connecting thin film (330) can connect the lower thin film (310) and the upper thin film (320). The substrate processing device (1) according to the present invention can perform a processing process on the substrate (200) by exposing the substrate (200) to a gas. In this case, the injection unit (4) can supply a source gas to the upper surface (230) of the substrate (200), the inside of the through hole (210), and the bottom surface (220) of the substrate (200), and supply a reactant gas to the upper surface (230) of the substrate (200), the inside of the through hole (210), and the bottom surface (220) of the substrate (200). The injection unit (4) can also supply a reactant gas after supplying the source gas to the upper surface peripheral portion (230a), the inner portion (240), and the bottom surface peripheral portion (220a). The source gas can include ruthenium (Ru), and the reactant gas can include oxygen (O2). In this case, the substrate processing device (1) according to the present invention can form a metal thin film on the upper peripheral portion (230a), the inner portion (240), and the lower peripheral portion (220a).

[0053] In this way, when the substrate processing device (1) according to the present invention is implemented to form the thin film (300) on the lower surface (220) of the substrate (200), the upper surface (230) of the substrate (200), and the inner surface of the substrate (200), the substrate processing device (1) according to the present invention may include a substrate support (5) and a substrate support lifting unit (6). Here, the substrate support is preferably a plurality of pins or jigs, but may be capable of supporting the substrate by contacting the lower portion of the substrate at a plurality of points, and its specific shape is not limited.

[0054] The substrate support (5) can be movably inserted into the heater (3). The substrate support (5) can be movably inserted into the heater (3) through an insertion hole (31) formed in the heater (3). The insertion hole (31) may be formed through the heater (3). When a loading process in which the substrate (200) is introduced into the chamber (2), the substrate support (5) may be arranged to protrude upward from the upper surface (30) of the heater (3). The loading process may be performed by loading the substrate (200) onto the substrate support (5) protruding upward from the heater (3). Meanwhile, after the substrate (200) is loaded onto the substrate support (5), the substrate support (5) may be arranged so as not to protrude from the upper surface (30) of the heater (3). Accordingly, the loading process may be performed by loading the substrate (200) onto the heater (3). When an unloading process is performed in which the substrate (200) is removed from the inside of the chamber (2), the substrate support (5) may be positioned to protrude upward from the upper surface (30) of the heater (3). The unloading process may be performed while the substrate (200) is loaded onto the substrate support (5) protruding upward from the heater (3). The unloading process and the loading process may be performed by a transfer robot (not shown).

[0055] The substrate support (5) can support the bottom surface (220) of the substrate (200). The substrate support (5) can support a portion spaced apart from the through hole (210) formed in the substrate (200). The substrate support (5) can support the substrate (200) such that the bottom surface (220) of the substrate (200) is spaced apart from the top surface (30) of the heater (3). In this state, a processing step for the substrate (200) can be performed. In this case, the substrate processing device (1) according to the present invention can expose the substrate (200) to gas in a state in which the bottom surface (220) of the substrate (200) loaded on the substrate support (5) is spaced apart from the top surface (30) of the heater (3). Accordingly, the substrate processing device (1) according to the present invention can be implemented such that some of the gas is supplied to the lower space (110) disposed between the lower surface (220) of the substrate (200) and the upper surface of the heater (3) through the through hole (210) to form the lower thin film (310) on the lower surface peripheral portion (220a), some of the gas is supplied to the through hole (210) to form the connecting thin film (330) on the inner portion (240), and some of the gas is formed to form the upper thin film (320) on the upper surface peripheral portion (230a). Accordingly, the substrate processing device (1) according to the present invention can improve the ease of the processing process for forming a thin film (300) connecting the upper surface (230) of the substrate (200) and the lower surface (220) of the substrate (200), such as a via hole, and thus can contribute to realizing high integration, miniaturization, thinning, etc. Meanwhile, the gas for forming the thin film (300) can be supplied through injection by the injection unit (4).

[0056] The substrate processing device (1) according to the present invention may include a plurality of substrate supports (5). The substrate supports (5) can support different parts of the substrate (200) at positions spaced apart from each other. Accordingly, the substrate processing device (1) according to the present invention can perform a processing process on the substrate (200) while firmly supporting the bottom surface (220) of the substrate (200) in a state spaced apart from the top surface (30) of the heater (3) using the substrate supports (5), thereby improving the stability of the processing process.

[0057] Referring to FIGS. 1 to 5, the substrate support elevating unit (6) can elevate and lower the substrate support (5). The substrate support elevating unit (6) can elevate and lower the substrate support (5) independently of the heater (3). In this case, even when the elevating and lowering of the heater (3) is stopped, the substrate support elevating unit (6) can elevate and lower the substrate support (5).

[0058] The substrate support lifting unit (6) may include a substrate support lifting unit (61). The substrate support lifting unit (61) may generate a driving force to raise and lower the substrate support (5). The substrate support lifting unit (61) may be implemented to raise and lower the substrate support (5) using a cylinder method using a hydraulic cylinder or a pneumatic cylinder, a belt method using a motor, a pulley, and a belt, a ball screw method using a motor, a ball screw, and a ball nut, etc. The substrate support lifting unit (61) may be arranged outside the chamber (2).

[0059] The substrate support lifting unit (6) may include a substrate support plate (52). The substrate support (5) may be coupled to the substrate support plate (52). The substrate support lifting unit (61) may raise and lower the substrate support plate (52), thereby raising and lowering the substrate support (5) through the substrate support plate (52). The substrate support plate (52) may be disposed inside the chamber (2). The substrate support plate (52) may be disposed below the heater (3).

[0060] The above substrate support lifting member (6) may include a substrate support lifting member (63) and a substrate support connecting member (64).

[0061] The substrate support lifting member (63) may be disposed between the substrate support plate (52) and the substrate support lifting unit (61). The substrate support lifting member (63) may be disposed outside the chamber (2). The substrate support lifting member (63) may be connected to the substrate support plate (52) via the substrate support connecting member (64). Accordingly, the substrate support lifting member (63) and the substrate support plate (52) may be raised and lowered together. The substrate support lifting member (63) may be raised and lowered by the substrate support lifting unit (61). The above substrate support lifting unit (61) can raise and lower the substrate support lifting member (63) and thereby raise and lower the substrate support plate (52) through the substrate support lifting member (63) and the substrate support connecting member (64). Accordingly, the substrate support (5) coupled to the substrate support plate (52) can be raised and lowered.

[0062] The substrate support connecting member (64) can be connected to each of the substrate support lifting member (63) and the substrate support plate (52). The lower portion of the substrate support connecting member (64) can be connected to the substrate support lifting member (63). The lower portion of the substrate support connecting member (64) can be disposed outside the chamber (2). The upper portion of the substrate support connecting member (64) can be connected to the substrate support plate (52). The upper portion of the substrate support connecting member (64) can be disposed inside the chamber (2). The substrate support connecting member (64) can be connected to the chamber (2) so as to be able to be moved up and down through a through hole formed in the chamber (2).

[0063] Referring to FIGS. 1 to 5, the substrate processing device (1) according to the present invention may include an elevator unit (7).

[0064] The above-mentioned lifting unit (7) can raise and lower the heater (3). While the above-mentioned lifting unit (7) lowers the heater (3), the above-mentioned loading process and the above-mentioned unloading process can be performed. While the above-mentioned lifting unit (7) raises the heater (3), the above-mentioned processing for the substrate (200) can be performed.

[0065] The above-mentioned lifting unit (7) may include an lifting unit (71). The lifting unit (71) may generate a driving force to raise and lower the heater (3). The lifting unit (71) may be implemented to raise and lower the heater (3) by using a cylinder method using a hydraulic cylinder or a pneumatic cylinder, a belt method using a motor, a pulley, and a belt, a ball screw method using a motor, a ball screw, and a ball nut, etc. The lifting unit (71) may be arranged outside the chamber (2).

[0066] Here, the substrate support lifting unit (61) may include a substrate support lifting rod (611). The substrate support lifting rod (611) may support the bottom surface of the substrate support lifting member (63). The substrate support lifting unit (61) may be coupled to the lifting member (7). In this case, the substrate support lifting unit (61) may be raised and lowered together with the heater (3) when the lifting member (7) raises and lowers the heater (3).

[0067] Meanwhile, when the substrate support lifting rod (611) supports the bottom surface of the substrate support lifting member (63) and the substrate support lifting unit (61) does not raise and lower the substrate support lifting rod (611) while the lifting unit (7) raises and lowers the heater (3) and the substrate support lifting unit (61), the heater (3) and the substrate support (5) can be raised and lowered together.

[0068] Meanwhile, when the substrate support lifting rod (611) supports the bottom surface of the substrate support lifting member (63) and the lifting unit (7) does not raise or lower the heater (3) and the substrate support lifting unit (61), and the substrate support lifting unit (61) raises or lowers the substrate support lifting rod (611), the substrate support (5) can be raised or lowered independently of the heater (3). In this case, the heater (3) does not raise or lower, and only the substrate support (5) can be raised or lowered.

[0069] Meanwhile, when the substrate support lifting rod (611) supports the bottom surface of the substrate support lifting member (63), and the lifting unit (7) raises the heater (3) and the substrate support lifting unit (61), and the substrate support lifting unit (61) lowers the substrate support lifting rod (611), the heater (3) can rise independently of the substrate support (5). In this case, the substrate support (5) does not rise and fall, and only the heater (3) can rise.

[0070] Meanwhile, when the substrate support lifting rod (611) supports the bottom surface of the substrate support lifting member (63), and the lifting unit (7) lowers the heater (3) and the substrate support lifting unit (61), and the substrate support lifting unit (61) raises the substrate support lifting rod (611), the heater (3) can be lowered independently of the substrate support (5). In this case, the substrate support (5) does not rise and fall, and only the heater (3) can be lowered.

[0071] In this way, the substrate processing device (1) according to the present invention is implemented so that the heater (3) and the substrate support (5) can be raised and lowered together, only the substrate support (5) can be raised and lowered, and only the heater (3) can be raised and lowered. Therefore, the substrate processing device (1) according to the present invention can have the versatility to perform the processing process according to various process conditions.

[0072] The above-mentioned elevator unit (7) may include an elevator body (72) and an elevator connecting member (73).

[0073] The above-mentioned elevating body (72) may be disposed between the heater (3) and the elevating unit (71). The above-mentioned elevating body (72) may be disposed outside the chamber (2). The above-mentioned elevating body (72) may be connected to the heater (3) through the elevating connection member (73). Accordingly, the above-mentioned elevating body (72) and the heater (3) may be elevated together. The above-mentioned elevating body (72) may be elevated by the above-mentioned elevating unit (71). The above-mentioned elevating unit (71) may elevate and lower the heater (3) through the above-mentioned elevating body (72) and the above-mentioned elevating connection member (73) by elevating and lowering the above-mentioned elevating body (72). The above-mentioned substrate support elevating unit (61) may be coupled to the above-mentioned elevating body (72). Accordingly, when the elevating unit (71) raises and lowers the elevating body (72), the substrate support elevating unit (61) can be raised and lowered together. The substrate support plate (62) and the substrate support elevating member (63) can be arranged between the elevating body (72) and the heater (3).

[0074] The above-mentioned lifting connection member (73) can be connected to each of the heater (3) and the lifting body (72). The lower part of the lifting connection member (73) can be connected to the lifting body (72). The lower part of the lifting connection member (73) can be disposed outside the chamber (2). The upper part of the lifting connection member (73) can be connected to the heater (3). The upper part of the lifting connection member (73) can be disposed inside the chamber (2). The lifting connection member (73) can be connected to the chamber (2) so as to be able to be moved up and down through a through-hole formed in the chamber (2).

[0075] Referring to FIGS. 1 to 8, the substrate support lifting unit (6) can operate as follows during the loading process, the processing process, and the unloading process.

[0076] First, when the above loading process is performed, the substrate (200) can be brought into the chamber (2). In this case, the transport robot can bring the substrate (200) into the chamber (2). The substrate support (5) can be raised by the substrate support lifting member (6) and protrude above the heater (3).

[0077] Next, as illustrated in FIG. 6, the substrate (200) can be loaded onto the substrate support (5). Accordingly, the substrate (200) can be loaded onto the substrate support (5) and positioned away from the upper surface (30) of the heater (3). In this case, the transport robot can load the substrate (200) onto the substrate support (5).

[0078] In this state, the substrate processing device (1) according to the present invention can expose the substrate (200) to gas. In this case, the substrate processing device (1) according to the present invention can form the thin film (300) on the bottom peripheral portion (220a), the top peripheral portion (230a), and the inner portion (240) by exposing the bottom peripheral portion (220a), the top peripheral portion (230a), and the inner portion (240) to gas. The work of exposing the lower peripheral portion (220a), the upper peripheral portion (230a), and the inner portion (240) to gas can be accomplished by supplying some of the gas injected by the injection unit (4) to the lower surface (220) of the substrate through the through hole (210), supplying some of the gas to the inner surface of the substrate through the through hole (210), and supplying some of the gas to the upper surface (230) of the substrate (200). That is, the injection unit (4) can form the lower thin film (310), the connecting thin film (330), and the upper thin film (320) on the substrate (200) by supplying gas to the lower peripheral portion (220a), the inner portion (240), and the upper peripheral portion (230a). The above injection unit (4) can supply a reactant gas after supplying a source gas to the lower peripheral portion (220a), the inner portion (240), and the upper peripheral portion (230a). Accordingly, the substrate processing device (1) according to the present invention can form the lower thin film (310), the connecting thin film (330), and the upper thin film (320) on the substrate (200) by an atomic layer deposition (ALD) method. The injection unit (4) can also supply a source gas and a reactant gas together to the lower peripheral portion (220a), the inner portion (240), and the upper peripheral portion (230a).Accordingly, the substrate processing device (1) according to the present invention can form the lower thin film (310), the connecting thin film (330), and the upper thin film (320) on the substrate (200) by chemical vapor deposition (CVD).

[0079] Next, after the above processing step is performed, the substrate (200) can be removed from the chamber (2) while the substrate support lifter (6) maintains the height of the substrate support (5). In this case, the transport robot can remove the substrate (200) from the chamber (2) after supporting the substrate (200) placed apart from the upper surface (30) of the heater (3) by the substrate support (5).

[0080] Referring to FIGS. 1 to 8, the substrate support lifting unit (6) and the lifting unit (7) may operate as follows during the loading process, the processing process, and the unloading process.

[0081] First, when the above loading process is performed, the elevating unit (7) can lower the heater (3). Accordingly, the elevating unit (7) can widen the space arranged above the heater (3) to ensure that the loading process is performed smoothly. In this case, the substrate support (5) may be in a state of protruding above the heater (3). The substrate support (5) can be raised by the substrate support elevating unit (6) and protrude above the heater (3).

[0082] Next, when the substrate (200) is loaded onto the substrate support (5) protruding upward from the heater (3) as illustrated in FIG. 6, the heater (3) and the substrate support (5) can be raised as illustrated in FIG. 7. In this case, the substrate support (5) can be raised while maintaining a state of protruding upward from the heater (3). The substrate support lifting unit (6) can raise the substrate support (5) in parallel with the lifting unit (7) raising the heater (3). In this case, the substrate support lifting member (6) may be raised together with the lifting body (72) as the lifting unit (71) raises the lifting body (72) while supporting the substrate support lifting member (63) via the substrate support lifting rod (611) so that the substrate support (5) remains in a state of protruding upward from the heater (3). Accordingly, the substrate support (5) and the heater (3) may be raised together by the lifting member (7).

[0083] Next, when the substrate support lifting unit (6) stops the rise of the substrate support (5), the lifting unit (7) can further raise the heater (3) and then stop the rise of the heater (3), as shown in FIG. 8. Accordingly, the distance (D) (hereinafter referred to as “the distance”) between the lower surface (220) of the substrate (200) loaded on the substrate support (5) and the upper surface (30) of the heater (3) can be adjusted to a length for performing the processing. That is, the lifting unit (7) can adjust the distance (D) by adjusting the height at which the heater (3) is further raised. The distance (D) may correspond to the height of the lower space (110). Meanwhile, when the substrate support lifting unit (61) is coupled to the lifting body (72), when the lifting unit (7) further raises the heater (3), the substrate support lifting unit (61) can stop the rise of the substrate support (5) by lowering the substrate support lifting rod (611).

[0084] After the above separation distance (D) is adjusted, the substrate processing device (1) according to the present invention can form the thin film (300) on the bottom peripheral portion (220a), the top peripheral portion (230a), and the inner portion (240) by exposing the bottom peripheral portion (220a), the top peripheral portion (230a), and the inner portion (240) to gas. The task of exposing the bottom peripheral portion (220a), the top peripheral portion (230a), and the inner portion (240) to gas can be accomplished by supplying some of the gas injected by the injection unit (4) to the bottom surface (220) of the substrate through the through hole (210), supplying some of the gas to the inner surface of the substrate through the through hole (210), and supplying some of the gas to the top surface (230) of the substrate (200). That is, the injection unit (4) can form the lower thin film (310), the connecting thin film (330), and the upper thin film (320) on the substrate (200) by supplying gas to the lower peripheral portion (220a), the inner portion (240), and the upper peripheral portion (230a). The injection unit (4) can supply a reactant gas after supplying a source gas to the lower peripheral portion (220a), the inner portion (240), and the upper peripheral portion (230a). Accordingly, the substrate processing device (1) according to the present invention can form the lower thin film (310), the connecting thin film (330), and the upper thin film (320) on the substrate (200) by an atomic layer deposition (ALD) method. The above injection unit (4) may supply source gas and reactant gas together to the lower peripheral portion (220a), the inner portion (240), and the upper peripheral portion (230a). Accordingly, the substrate processing device (1) according to the present invention can form the lower thin film (310), the connecting thin film (330), and the upper thin film (320) on the substrate (200) by chemical vapor deposition (CVD).

[0085] Next, after the above processing step is performed, the substrate support lifting unit (6) can lower the heater (3) while maintaining the height of the substrate support (5). Accordingly, the separation distance (D) can be increased. Meanwhile, when the substrate support lifting unit (61) is coupled to the lifting body (72), when the lifting unit (7) lowers the heater (3), the substrate support lifting unit (61) can maintain the height of the substrate support (5) by raising the substrate support lifting rod (611).

[0086] Next, the substrate support (5) and the heater (3) can be lowered. In this case, the substrate support (5) can be lowered while maintaining a state in which it protrudes upward from the heater (3). The substrate support lifting unit (6) can lower the substrate support (5) in parallel with the lifting unit (7) lowering the heater (3). In this case, the substrate support lifting unit (6) can be lowered together with the lifting body (72) as the lifting unit (71) lowers the lifting body (72) while supporting the substrate support lifting member (63) through the substrate support lifting rod (611) so that the substrate support (5) is maintained in a state in which it protrudes upward from the heater (3). Accordingly, the substrate support (5) and the heater (3) can be lowered together by the lifting unit (7).

[0087] Next, the unloading process can be performed. In this case, the transport robot can support the substrate (200) placed apart from the upper surface (30) of the heater (3) by the substrate support (5) and then remove it from the chamber (2).

[0088] Meanwhile, in the above, it has been described that after the rise of the substrate support (5) has stopped, the heater (3) is further raised to adjust the separation distance (D), but this is not limited thereto, and the substrate support lifting unit (6) may adjust the height of the substrate support (5) to adjust the separation distance (D). In this way, in a state where the separation distance (D) is adjusted by the substrate support lifting unit (6), the injection unit (4) can expose the substrate (200) to the gas. After the rise of the substrate support (5) has stopped, the heater (3) may further be raised to first adjust the separation distance (D), and the substrate support lifting unit (6) may secondarily adjust the separation distance (D) by adjusting the height of the substrate support (5). In the case where the separation distance (D) is adjusted by adjusting the height of the substrate support (5), the substrate (200) may be loaded onto the substrate support (5) while the substrate support (5) is positioned at a first height, and the substrate (200) loaded onto the substrate support (5) positioned at the first height may be changed to a position at a second height, and then the substrate (200) may be exposed to gas. The first height and the second height may be different positions. The second height may be a position higher or lower than the first height.

[0089] Furthermore, referring to FIG. 5, the distance (D) between the lower surface of the substrate (200) and the heater (3) can be adjusted to be less than or equal to the distance (T) between the upper surface of the substrate (200) and the lower surface of the spray unit (4). Alternatively, the distance (D) between the lower surface of the substrate and the heater can be adjusted to be greater than or equal to the distance (T) between the upper surface of the substrate (200) and the spray unit (4).

[0090]

[0091] Referring to FIGS. 1 to 8, the substrate support lifting unit (6) may operate as follows during the loading process, the processing process, and the unloading process.

[0092] First, when the above loading process is performed, the substrate (200) can be brought into the chamber (2). In this case, the transport robot can bring the substrate (200) into the chamber (2). The substrate support (5) can be positioned so as not to protrude above the heater (3) by the substrate support lifting member (6).

[0093] Next, the substrate (200) can be loaded onto the heater (3). In this case, the transport robot can load the substrate (200) onto the upper surface (30) of the heater (3).

[0094] Next, the substrate (200) can be spaced apart from the upper surface (30) of the heater (3). In this case, the substrate support elevating member (6) can raise the substrate support (5) so that the substrate support (5) protrudes toward the upper side of the heater (3). Accordingly, the substrate (200) can be loaded onto the substrate support (5) and placed at a position spaced apart from the upper surface (30) of the heater (3).

[0095] In this state, the substrate processing device (1) according to the present invention can expose the substrate (200) to gas. In this case, the substrate processing device (1) according to the present invention can form the thin film (300) on the bottom peripheral portion (220a), the top peripheral portion (230a), and the inner portion (240) by exposing the bottom peripheral portion (220a), the top peripheral portion (230a), and the inner portion (240) to gas. The work of exposing the lower peripheral portion (220a), the upper peripheral portion (230a), and the inner portion (240) to gas can be accomplished by supplying some of the gas injected by the injection unit (4) to the lower surface (220) of the substrate through the through hole (210), supplying some of the gas to the inner surface of the substrate through the through hole (210), and supplying some of the gas to the upper surface (230) of the substrate (200). That is, the injection unit (4) can form the lower thin film (310), the connecting thin film (330), and the upper thin film (320) on the substrate (200) by supplying gas to the lower peripheral portion (220a), the inner portion (240), and the upper peripheral portion (230a). The above-described injection unit (4) can supply a reactant gas after supplying a source gas to the lower peripheral portion (220a), the inner portion (240), and the upper peripheral portion (230a). Accordingly, the substrate processing device (1) according to the present invention can form the lower thin film (310), the connecting thin film (330), and the upper thin film (320) on the substrate (200) by an atomic layer deposition (ALD) method. The above-described injection unit (4) can also supply a source gas and a reactant gas together to the lower peripheral portion (220a), the inner portion (240), and the upper peripheral portion (230a). Accordingly, the substrate processing device (1) according to the present invention can form the lower thin film (310), the connecting thin film (330), and the upper thin film (320) on the substrate (200) by a chemical vapor deposition (CVD) method.

[0096] Next, after the above processing step is performed, the substrate (200) can be removed from the chamber (2) while the substrate support lift unit (6) maintains the height of the substrate support unit (5). In this case, the transport robot can support the substrate (200) spaced apart from the upper surface (30) of the heater (3) by the substrate support unit (5) and then remove it from the chamber (2). After the processing step is performed, the substrate support lift unit (6) can lower the substrate support unit (5) to load the substrate (200) onto the heater (3), and then the transport robot can support the substrate (200) loaded onto the heater (3) and then remove it from the chamber (2).

[0097] Hereinafter, an embodiment of a thin film forming method according to the present invention will be described in detail with reference to the attached drawings.

[0098] Referring to FIGS. 1 to 9, the thin film formation method according to the present invention is for forming the thin film (300) on the substrate (200). The thin film formation method according to the present invention can be performed by the substrate processing device (1) according to the present invention described above. The thin film formation method according to the present invention can include the following steps.

[0099] First, the substrate (200) is loaded onto the substrate support (5) (S10). This step (S10) can be performed by bringing the substrate (200) into the chamber (2) and loading the substrate (200) onto the substrate support (5) protruding above the heater (3). The step (S10) of loading the substrate onto the substrate support can be performed by lowering the heater (3) and then loading the substrate (200) onto the substrate support (5) protruding above the heater (3). Through the step (S10) of loading the substrate onto the substrate support, the substrate (200) can be loaded onto the substrate support (5) so that the bottom surface (220) is positioned apart from the top surface (30) of the heater (3).

[0100] Next, the heater (3) and the substrate support (5) are raised (S20). This step (S20) can be performed by raising the heater (3) and the substrate support (5) while the substrate (200) loaded on the substrate support (5) is spaced apart from the upper surface (30) of the heater (3). When the substrate support lifting unit (61) is coupled to the lifting body (72), the substrate support (5) can be raised together as the lifting unit (7) raises the heater (3). In this case, the substrate support lifting unit (6) can maintain the substrate support (5) in a state in which it protrudes upward from the heater (3).

[0101] Next, the rise of the substrate support (5) is stopped, and the heater (3) is further raised (S30). This step (S30) can be performed by the elevation unit (7) further raising the heater (3) while the substrate support elevation unit (6) maintains the height of the substrate support (5). Accordingly, the separation distance (D) can be adjusted to a length for performing the processing step. Meanwhile, when the substrate support elevation unit (61) is coupled to the elevation body (72), when the elevation unit (7) further raises the heater (3), the substrate support elevation unit (61) can lower the substrate support elevation rod (611) to stop the rise of the substrate support (5).

[0102] Next, the rise of the heater (3) is stopped, and the substrate (200) loaded on the substrate support (5) can be exposed to gas while the bottom surface (220) of the substrate (200) is spaced apart from the top surface (30) of the heater (3) (S40). This step (S40) can be performed by the injection unit (4) injecting gas while the bottom surface (220) of the substrate (200) loaded on the substrate support (5) is spaced apart from the top surface (30) of the heater (3). Through the step (S40) of exposing the substrate to gas, some of the gas injected by the injection unit (4) can be supplied to the lower surface (220) of the substrate through the through hole (210), some of the gas can be supplied to the inner surface of the substrate through the through hole (210), and some of the gas can be supplied to the upper surface (230) of the substrate (200). Accordingly, the thin film forming method according to the present invention can form the lower thin film (310) on the lower peripheral portion (220a) using the gas supplied to the lower surface (220) of the substrate (200) through the through hole (210), form the connecting thin film (330) on the inner portion (240) using the gas supplied to the inner surface of the substrate (200) through the through hole (210), and form the upper thin film (320) on the upper peripheral portion (230a) using the gas supplied to the upper surface (230) of the substrate (200). Therefore, the thin film forming method according to the present invention can improve the ease of the processing process for forming the thin film (300) connecting the upper surface (230) of the substrate (200) and the lower surface (220) of the substrate (200), such as a via hole, and thus can contribute to realizing high integration, miniaturization, thinning, etc.

[0103] Referring to FIGS. 1 to 9, the step (S30) of additionally raising the heater can adjust the distance (D) by adjusting the height at which the heater (3) is additionally raised. Therefore, the thin film forming method according to the present invention can improve the versatility of performing the processing process by adjusting the distance (D) according to various process conditions.

[0104] Referring to FIGS. 1 to 9, the step (S40) of exposing the substrate to gas can be performed by supplying gas to the upper peripheral portion (230a), the inner portion (240), and the lower peripheral portion (220a). In this case, the gas can be supplied by the injection portion (4).

[0105] The step (S40) of exposing the substrate to gas may include a step (S41) of supplying a source gas and a step (S42) of supplying a reactant gas.

[0106] The step (S41) of supplying the source gas may be performed by supplying the source gas to the upper surface (230) of the substrate (200), the inside of the through hole (210), and the lower surface (220) of the substrate (200). The step (S41) of supplying the source gas may be performed by the injection unit (4) injecting the source gas. The injection unit (4) may inject the source gas through the first gas path (4a). The step (S41) of supplying the source gas may also be performed by supplying the source gas to the upper surface peripheral portion (230a), the inner portion (240), and the lower surface peripheral portion (220a).

[0107] The step (S42) of supplying the reactant gas may be performed by supplying the reactant gas to the upper surface (230) of the substrate (200), the inside of the through hole (210), and the lower surface (220) of the substrate (200). The step (S42) of supplying the reactant gas may be performed by the injection unit (4) injecting the reactant gas. The injection unit (4) may inject the reactant gas through the second gas path (4b). The step (S42) of supplying the reactant gas may also be performed by supplying the reactant gas to the upper surface peripheral portion (230a), the inner portion (240), and the lower surface peripheral portion (220a).

[0108] The step (S40) of exposing the substrate to gas can be performed by performing the step (S41) of supplying the source gas and then performing the step (S42) of supplying the reactant gas. Accordingly, since the reactant gas is supplied after the source gas is supplied to the upper peripheral portion (230a), the inner portion (240), and the lower peripheral portion (220a), the thin film forming method according to the present invention can form the upper thin film (320), the connecting thin film (330), and the lower thin film (310) on the substrate (200) by an atomic layer deposition (ALD) method.

[0109] The step (S40) of exposing the substrate to gas may be performed by simultaneously performing the step (S41) of supplying the source gas and the step (S42) of supplying the reactant gas. Accordingly, since the source gas and the reactant gas are supplied together to the upper peripheral portion (230a), the inner portion (240), and the lower peripheral portion (220a), the thin film forming method according to the present invention can form the upper thin film (320), the connecting thin film (330), and the lower thin film (310) on the substrate (200) by chemical vapor deposition (CVD).

[0110] Meanwhile, the step (S41) of supplying the source gas may supply a source gas containing ruthenium (Ru). The step (S42) of supplying the reactant gas may supply a reactant gas containing oxygen (O2). In this case, the thin film forming method according to the present invention may form a metal thin film on the substrate (200).

[0111] Referring to FIGS. 1 to 8 and 10, the thin film forming method according to the present invention may include the following steps.

[0112] First, the substrate (200) is loaded (S100). This step (S100) can be performed by loading the substrate (200) with the through hole (210) formed into the chamber (2). The step (S100) of loading the substrate can be performed by the transport robot.

[0113] Next, the substrate (200) is loaded onto the substrate support (5) (S200). This step (S200) can be performed by having the transfer robot load the substrate (200) onto the substrate support (5). The step (S200) of loading the substrate onto the substrate support can be performed by loading the substrate (200) onto the substrate support (5) while the substrate support (5) protrudes from the heater (3). Accordingly, the substrate (200) can be loaded onto the substrate support (5) and placed at a position spaced apart from the heater (3).

[0114] Next, the substrate (200) is exposed to gas (S300). This step (S300) can be performed by exposing the substrate (200) loaded on the substrate support (5) to gas. Since the substrate (200) is loaded on the substrate support (5), the step (S300) of exposing the substrate to gas can form the upper thin film (320), the connecting thin film (330), and the lower thin film (310) on the substrate (200) by supplying gas to the upper peripheral portion (230a), the inner portion (240), and the lower peripheral portion (220a).

[0115] The thin film forming method according to the present invention can be achieved by forming a thin film on the substrate (200) while the substrate (200) is loaded onto the substrate support (5) and spaced apart from the heater (3) while neither the substrate support (5) nor the heater (3) are raised or lowered, and the substrate (200) brought into the chamber (2) is formed on the substrate (200). Meanwhile, the step of exposing the substrate to a gas (S300) may include a step of supplying the source gas (S41, illustrated in FIG. 9) and a step of supplying the reactant gas (S42, illustrated in FIG. 9). The step of exposing the substrate to a gas (S300) may also be achieved by supplying the reactant gas after supplying the source gas. The source gas may include ruthenium, and the reactant gas may include oxygen.

[0116] Referring to FIGS. 1 to 8 and FIG. 11, the thin film forming method according to the present invention may include the following steps.

[0117] First, the substrate (200) is loaded (S100). This step (S100) can be performed by loading the substrate (200) with the through hole (210) formed into the chamber (2). The step (S100) of loading the substrate can be performed by the transport robot.

[0118] Next, the substrate (200) is loaded onto the substrate support (5) (S200). This step (S200) can be performed by the transport robot loading the substrate (200) onto the substrate support (5). The step (S200) of loading the substrate onto the substrate support can be performed by loading the substrate (200) onto the substrate support (5) located at the first height. When the substrate support (5) is located at the first height, the substrate support (5) can protrude from the heater (3). Accordingly, the substrate (200) can be loaded onto the substrate support (5) in a state where the substrate support (5) protrudes from the heater (3). Accordingly, the substrate (200) can be loaded onto the substrate support (5) located at the first height and placed at a position spaced apart from the heater (3).

[0119] Next, the substrate (200) loaded on the substrate support (5) located at the first height is changed to a position of a second height (S400). This step (S400) can be performed by having the substrate support elevating unit (6) raise and lower the substrate support (5) located at the first height. The substrate support elevating unit (6) can change the substrate (200) loaded on the substrate support (5) to a position of the second height by raising and lowering the substrate support (5) located at the first height to the second height. The first height and the second height may be different positions. The second height may be a position higher or lower than the first height. Even when the substrate (200) is changed to the position of the second height, the substrate (200) can be loaded on the substrate support (5) and placed at a position spaced apart from the heater (3).

[0120] Next, the substrate (200) is exposed to gas (S300). This step (S300) can be performed by exposing the substrate (200) loaded on the substrate support (5) at the second height to gas. Since the substrate (200) is loaded on the substrate support (5) at the second height and is spaced apart from the heater (3), the step (S300) of exposing the substrate to gas can form the upper thin film (320), the connecting thin film (330), and the lower thin film (310) on the substrate (200) by supplying gas to the upper peripheral portion (230a), the inner portion (240), and the lower peripheral portion (220a).

[0121] The thin film forming method according to the present invention can be achieved by forming a thin film on the substrate (200) after the substrate (200) brought into the chamber (2) is loaded onto the substrate support (5) and then raised and lowered without the heater (3) being raised and lowered. In this case, the substrate (200) loaded onto the substrate support (5) may be spaced apart from the heater (3). Meanwhile, the step of exposing the substrate to a gas (S300) may include a step of supplying the source gas (S41, illustrated in FIG. 9) and a step of supplying the reactant gas (S42, illustrated in FIG. 9). The step of exposing the substrate to a gas (S300) may also be achieved by supplying the reactant gas after supplying the source gas. The source gas may include ruthenium, and the reactant gas may include oxygen.

[0122] Referring to FIGS. 1 to 8 and FIG. 12, the thin film forming method according to the present invention may include the following steps.

[0123] First, the substrate (200) is loaded (S100). This step (S100) can be performed by loading the substrate (200) with the through hole (210) formed into the chamber (2). The step (S100) of loading the substrate can be performed by the transport robot.

[0124] Next, the substrate (200) is loaded onto the heater (3) (S500). This step (S500) can be performed by having the transport robot load the substrate (200) onto the heater (3). In this case, the substrate support (5) can be positioned so as not to protrude from the heater (3) by the substrate support lifting member (6).

[0125] Next, the substrate (200) is spaced apart from the heater (3) (S600). This step (S600) can be performed by spaced apart the substrate (200) loaded onto the heater (3) from the heater (3). The step (S600) of adjusting the space between the substrate and the heater can be performed by, while the substrate (200) is loaded onto the heater (3), raising the substrate support (5) so as to protrude from the heater (3), and supporting and raising the substrate (200) while the substrate support (5) is raised. The substrate support (5) can be raised by the substrate support lifting member (6). Accordingly, the substrate (200) can be loaded onto the substrate support (5) and placed at a position spaced apart from the heater (3).

[0126] Next, the substrate (200) is exposed to gas (S300). This step (S300) can be performed by exposing the substrate (200) to gas while the heater (3) is spaced apart from the substrate. Accordingly, the step (S300) of exposing the substrate to gas can form the upper thin film (320), the connecting thin film (330), and the lower thin film (310) on the substrate (200) by supplying gas to the upper peripheral portion (230a), the inner portion (240), and the lower peripheral portion (220a).

[0127] The thin film forming method according to the present invention can be achieved by forming a thin film on the substrate (200) in a state where the substrate support (5) is raised and lowered without the heater (3) being raised and lowered, the substrate (200) brought into the chamber (2) is loaded onto the heater (3), and then the substrate support (5) is raised to separate the substrate (200) from the heater (3). Meanwhile, the step of exposing the substrate to a gas (S300) may include a step of supplying the source gas (S41, illustrated in FIG. 9) and a step of supplying the reactant gas (S42, illustrated in FIG. 9). The step of exposing the substrate to a gas (S300) may also be achieved by supplying the reactant gas after supplying the source gas. The source gas may include ruthenium, and the reactant gas may include oxygen.

[0128] The present invention described above is not limited to the above-described embodiments and the attached drawings, and it will be apparent to a person skilled in the art to which the present invention pertains that various substitutions, modifications, and changes are possible within a scope that does not depart from the technical spirit of the present invention.

[0129] According to embodiments of the present invention, by supplying gas not only to the upper surface of the substrate but also to the space between the lower surface and the heater, a processing process for forming an upper thin film formed on the upper surface of the substrate, a lower thin film formed on the lower surface of the substrate, and a thin film connecting them can be easily performed. Therefore, the present invention has industrial applicability.

Claims

1. Step of bringing the substrate into the chamber; A step of loading the substrate onto a substrate support; and A step of exposing the substrate loaded on the substrate support to gas; A thin film forming method including:

2. In paragraph 1, The step of exposing the above substrate to gas is: A step of supplying a source gas to the above substrate; and A step of supplying reactant gas to the above substrate; A thin film forming method characterized by including:

3. In paragraph 2, The above source gas contains ruthenium (Ru), A thin film forming method characterized in that the above reactant gas contains oxygen (O2).

4. Step of bringing the substrate into the chamber; A step of loading the substrate onto a substrate support positioned at a first height; A step of changing a substrate loaded on a substrate support positioned at the first height to a position at a second height; and A step of exposing the substrate loaded on the substrate support at the second height position to gas; A thin film forming method including:

5. In paragraph 4, A thin film forming method characterized in that the first height and the second height are at different positions or the second height is adjusted to a height higher or lower than the first height.

6. In paragraph 4, A heater is included within the chamber, A thin film forming method characterized in that the substrate is exposed to gas at a distance from the heater.

7. In paragraph 4, The step of exposing the above substrate to gas is: A step of supplying a source gas to the above substrate; and A step of supplying reactant gas to the above substrate; A thin film forming method characterized by including:

8. In paragraph 7, The above source The above source gas contains ruthenium (Ru), A thin film forming method characterized in that the above reactant gas contains oxygen (O2).

9. In the 6th paragraph, including an injection unit that injects gas into the chamber, A thin film forming method characterized in that the distance (D) between the lower surface of the substrate and the heater is adjusted to be smaller than or equal to the distance (T) between the upper surface of the substrate and the injection unit.

10. In the 6th paragraph, including an injection unit that injects gas into the chamber, A thin film forming method characterized in that the distance (D) between the lower surface of the substrate and the heater is adjusted to be greater than or equal to the distance (T) between the upper surface of the substrate and the injection unit.

11. Step of bringing the substrate into the chamber; A step of loading the above substrate into a heater; A step of adjusting the gap between the substrate and the heater; and A step of exposing the substrate to gas while the gap between the substrate and the heater is adjusted; A thin film forming method including:

12. In paragraph 11, The step of exposing the above substrate to gas is: A step of supplying a source gas to the above substrate; and A step of supplying reactant gas to the above substrate; A thin film forming method characterized by including:

13. In paragraph 12, The above source gas contains ruthenium (Ru), A thin film forming method characterized in that the above reactant gas contains oxygen (O2).

14. A step of bringing the substrate into the chamber and loading it onto the substrate support protruding from the upper side of the heater; A step of adjusting the above heater and the above substrate support; A step of stopping the adjustment of the substrate support and further adjusting the heater; and A step of stopping the control of the heater and exposing the substrate loaded on the substrate support to gas in a state where the lower surface of the substrate is spaced apart from the upper surface of the heater; A thin film forming method including:

15. In paragraph 14, A thin film forming method characterized in that the step of further raising the heater comprises further adjusting the height of the heater to adjust the distance between the lower surface of the substrate loaded on the substrate support and the upper surface of the heater.

16. In the 14th paragraph, including an injection unit that injects gas into the chamber, A thin film forming method characterized in that the distance (D) between the lower surface of the substrate and the heater is adjusted to be smaller than or equal to the distance (T) between the upper surface of the substrate and the injection unit.

17. In the 14th paragraph, including an injection unit that injects gas into the chamber, A thin film forming method characterized in that the distance (D) between the lower surface of the substrate and the heater is adjusted to be greater than or equal to the distance (T) between the upper surface of the substrate and the injection unit.

18. In paragraph 14, The step of exposing the above substrate to gas is: A step of supplying a source gas to the above substrate; and A thin film forming method characterized by comprising a step of supplying a reactant gas to the above substrate.

19. In paragraph 18, The step of supplying the above source gas supplies a source gas containing ruthenium (Ru), A thin film forming method, characterized in that the step of supplying the above reactant gas supplies a reactant gas containing oxygen (O2).

20. Chamber; A heater placed inside the chamber; A lifting unit for raising and lowering the above heater; A substrate support inserted so as to be able to be raised or lowered for the above heater; A substrate support lifting unit that raises and lowers the substrate support; and An injection unit that injects gas into the interior of the chamber; Including, The above substrate support supports the substrate so that the lower surface of the substrate is spaced apart from the upper surface of the heater, A substrate processing device characterized in that the injection unit exposes the substrate loaded on the substrate support to gas while the lower surface of the substrate is spaced apart from the upper surface of the heater.

21. In paragraph 20, A substrate processing device characterized in that the above injection unit supplies a reactant gas after supplying a source gas to the substrate.

22. In paragraph 21, The above source gas contains ruthenium (Ru), A substrate processing device characterized in that the above reactant gas contains oxygen (O2).

23. In paragraph 20, The above substrate support lifting unit adjusts the height of the substrate support to adjust the distance between the bottom surface of the substrate loaded on the substrate support and the top surface of the heater. A substrate processing device characterized in that the injection unit exposes the substrate to gas while the distance between the lower surface of the substrate and the upper surface of the heater is adjusted by the substrate support lifting unit.

24. In paragraph 23, A thin film forming method characterized in that the distance (D) between the lower surface of the substrate and the heater is adjusted to be smaller than or equal to the distance (T) between the upper surface of the substrate and the injection unit.

25. In the 23rd paragraph, further comprising an injection unit for injecting gas onto the substrate, A thin film forming method characterized in that the distance (D) between the lower surface of the substrate and the heater is adjusted to be greater than or equal to the distance (T) between the upper surface of the substrate and the injection unit.

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