Method for manufacturing a plurality of radiation-emitting components, and radiation-emitting component

Abstract

The invention relates to a method for manufacturing a plurality of radiation-emitting components, the method comprising the steps of: - providing a component assembly comprising a plurality of radiation-emitting semiconductor chips each having a main emission surface, - arranging a conversion layer containing a phosphor on each of the main emission surfaces, and - treating regions of surfaces of the conversion layers with a laser, wherein the thickness of the conversion layers is locally reduced and / or the phosphor is altered. The invention also relates to a radiation-emitting component.

Description

[0001] 2023PF01535 March 13, 2025P2023,1538 DE E - 1 -Description METHOD FOR PRODUCING A PLURALITY OF RADIATION-EMITTING COMPONENTS AND RADIATION-EMITTING COMPONENT A method for producing a plurality of radiation-emitting components and a radiation-emitting component are specified. At least one object is to provide a method with improved efficiency for producing a plurality of radiation-emitting components. Furthermore, at least one object is to provide a radiation-emitting component with improved properties. These objects are achieved by a method and a radiation-emitting component according to the independent claims. According to at least one embodiment, a method for producing a plurality of radiation-emitting components is specified. A radiation-emitting component is configured to emit electromagnetic radiation.The emitted electromagnetic radiation has, for example, wavelengths from the visible range of the electromagnetic spectrum. The emitted radiation can, in particular, be white or colored light. According to at least one embodiment, the method comprises the step of providing a component assembly with a plurality of radiation-emitting semiconductor chips, each having a main emission surface.2023PF01535 March 13, 2025P2023,1538 DE E -. 2 -In a component assembly, the plurality of radiation-emitting semiconductor chips is arranged on a common carrier. In particular, the carrier with the plurality of radiation-emitting semiconductor chips is a wafer assembly, which is obtained, for example, after epitaxial growth of a semiconductor layer sequence of the radiation-emitting semiconductor chips. During the process, the radiation-emitting components are completed, are initially arranged on the common carrier, and can then be singulated. The component assembly has, for example, a diameter of at least 5 inches, for example 6 inches or 8 inches. The radiation-emitting semiconductor chips each comprise, for example, an epitaxially grown semiconductor layer sequence. In particular, the semiconductor layer sequence has an active region in which electromagnetic radiation is generated.The electromagnetic radiation can leave the radiation-emitting semiconductor chip via the main emission surface of the radiation-emitting semiconductor chip. For example, the main emission surface is arranged parallel to a main extension plane of the radiation-emitting semiconductor chip and the component assembly. The main emission surface is, in particular, the surface of a semiconductor chip facing away from the carrier. According to at least one embodiment, the method further comprises the step of arranging a conversion layer containing a phosphor on a 2023PF01535 March 13, 2025P2023,1538 DE E -. 3 -Main emission surface. In this step, a conversion layer is applied to each main emission surface. Thus, a plurality of conversion layers are arranged on the plurality of main emission surfaces. The conversion layers are, in particular, produced jointly. It is possible for all conversion layers to be present in a composite and only separated after they have been arranged on the main emission surfaces during the process. In this embodiment, all conversion layers are arranged flatly, i.e., together and contiguously, on the main emission surfaces. In particular, the arrangement of the conversion layers is then carried out by doctor blade coating, slot die casting or slot coating, or spin coating.Alternatively, it is possible for the conversion layers to be separated prior to being arranged on the main emission surfaces and to be applied at a distance from one another to each main emission surface. In the following, in connection with the method, unless explicitly stated otherwise, the plurality of main emission surfaces and conversion layers is also meant, even if only "one" conversion layer or main emission surface is referred to. The conversion layer can further contain or consist of a phosphor. The term "phosphor" is understood here and below to mean a wavelength conversion material, i.e., a material designed to absorb and emit electromagnetic radiation. In particular, the 2023PF01535 March 13, 2025P2023,1538 DE E - absorbs. 4 -Phosphor: electromagnetic radiation that has a different wavelength maximum than the electromagnetic radiation emitted by the phosphor. For example, the phosphor absorbs radiation with a wavelength maximum at shorter wavelengths than the emission maximum and thus emits radiation with an emission maximum shifted towards red. Pure scattering or pure absorption are not understood here as wavelength-converting. Furthermore, the phosphor can contain a phosphor material or be a mixture of different phosphor materials. If the conversion layer consists of a phosphor, this can be monolithic. Alternatively, the phosphor can be present as a plurality of phosphor particles, which are embedded, for example, in a matrix material. The phosphor particles can all have the same size or a distribution of sizes.For example, the median diameter of the phosphor particles (d50 value) can be in the range from 0.5 µm to 35 µm, in particular in the range from 0.5 µm to 16 µm. According to at least one embodiment, the method further comprises the step of treating surfaces of the conversion layers with a laser in some regions, whereby a thickness of the conversion layers is locally reduced and / or the phosphor is modified. Laser treatment is understood to mean a measure in which a laser beam interacts with the material on the surface of the conversion layer, thereby causing a molecular change. This can be done either 2023PF01535 March 13, 2025 P2023,1538 DE E -. 5 -by the laser beam alone or with the aid of another medium. "Regionally" is to be understood as meaning that the laser treatment does not take place over the entire surface of the conversion layers, but only in certain areas of the surface. The laser treatment can thus, for example, take place in a certain structure. This can not only result in different thicknesses of the individual conversion layers, but also the thickness of an individual conversion layer can be reduced in certain areas; an individual conversion layer can thus have a varying thickness. Additionally or alternatively, the phosphor, which is present, for example, in particle form, can be altered in these areas by the laser treatment, leading to a change in its conversion properties. A change in the phosphor includes, in particular, the deactivation or destruction of individual phosphor particles.The treatment takes place on the surfaces of the conversion layers. This can generally involve surfaces of the conversion layers facing away from the main emission surfaces or surfaces of the conversion layers facing the main emission surfaces. In particular, the surfaces facing away from the main emission surfaces are treated with a laser in certain areas. This refers to the surfaces of the conversion layers that are not or will be arranged on the main emission surfaces, but are located opposite them. 2023PF01535 March 13, 2025P2023,1538 DE E -. 6 -Here and in the following, a thickness is understood to mean the dimension of the conversion layer that runs perpendicular to its main plane of extension or perpendicular to the main plane of extension of the component assembly. An exemplary thickness of a conversion layer is, for example, in the range from 5 µm to 100 µm, in particular from 5 µm to 50 µm, for example from 8 µm to 40 µm, with a reduced thickness correspondingly lower.According to at least one embodiment, a method for producing a plurality of radiation-emitting components is specified, comprising the steps of: - providing a component assembly with a plurality of radiation-emitting semiconductor chips, each having a main emission surface; - arranging a conversion layer containing a phosphor on each main emission surface; - treating surfaces of the conversion layers in regions with a laser, wherein a thickness of the conversion layers is locally reduced and / or the phosphor is modified. Conversion layers are typically combined with radiation-emitting semiconductor chips, such as LED chips (LED: light-emitting diode), to generate light of a specific color, in particular white. For this purpose, blue-light-emitting semiconductor chips are frequently combined with a conversion material containing a phosphor.The radiation generated by the semiconductor chip, also called primary radiation, is at least partially absorbed by the phosphor in the conversion layer and converted into electromagnetic radiation with a different wavelength range, the so-called secondary radiation. 2023PF01535 March 13, 2025P2023,1538 DE E -. 7 -The total emission of a radiation-emitting component is the secondary radiation in the case of full conversion, or a mixture of primary and secondary radiation in the case of partial conversion. To achieve a desired color coordinate of the total emission, a suitable combination of the wavelength of the primary radiation with the properties of the conversion layer, in particular the absorption and re-emission strength, i.e., the conversion efficiency, as well as the emission spectrum, must be present. However, due to the epitaxial process and the epitaxial apparatus, semiconductor chips in a component assembly exhibit a distribution or inhomogeneity of their main emission wavelength. Conversion layers can also exhibit a distribution of the absorption and re-emission strength, as well as the emission spectrum, which is caused in particular by fluctuations in the phosphor concentration in the conversion layer and by fluctuations in their mechanical dimensions, especially their thickness.Thus, a random combination of semiconductor chip and conversion layer results in a broad color location scatter instead of a desired color location of the total emission of the radiation-emitting component, and thus in a low yield or efficiency. A random combination of semiconductor chip and conversion layer occurs particularly when the conversion material is applied directly to a component assembly, for example, by doctor blade coating (wafer-level conversion, WLC). In such a case, the thickness of the conversion layers is usually reduced globally by grinding. This allows the aforementioned irregularities of the semiconductor chip or concentration-2023PF01535 March 13, 2025P2023,1538 DE E -. 8 -However, dimensional variations in the conversion layers cannot be compensated for. Alternatively, the optical properties of semiconductor chips and individual conversion layers could be measured, and on this basis, only semiconductor chips and conversion layers could be combined that result in an overall emission with the desired color location. However, this procedure is very time-consuming and costly. With the method described here, the thickness of both surface-applied conversion layers (WLC), i.e., composite conversion layers, and individual conversion layers can be reduced in certain areas and / or the phosphor can be changed in certain areas. This changes the conversion degree and / or the conversion properties in certain areas, and compensates for variations in the thickness of the conversion layers and the concentration of the phosphor in the conversion layers.With a suitable combination with semiconductor chips, the resulting color location of the total emission can be adjusted locally and individually. The method can thus be used to produce radiation-emitting components that have a locally adjusted conversion layer thickness and thus a locally adjusted conversion degree and / or a locally adjusted conversion property of the phosphor, which can compensate for the distribution of the emission wavelength of the semiconductor chips as well as fluctuations in the thickness of the conversion layers and the concentration of the phosphor in the conversion layers. This compensation, in turn, results in a narrow color location distribution and a high 2023PF01535 March 13, 2025P2023,1538 DE E -. 9 -Yield of the desired color coordinate of the radiation-emitting components produced using the method. This is achieved by means of a laser treatment, which can be used in a controlled manner to locally reduce the thickness of the conversion layer and / or to change the phosphor and thus adjust the color coordinate depending on the location. The method is also cost-effective and produces radiation-emitting components with an improved color coordinate yield due to the local color coordinate correction or control. This leads in particular to an improved angle-independent color impression of a radiation-emitting component produced using the method, which enables new product designs and process sequences. According to at least one embodiment, the laser treatment takes place before or after the arrangement of the respective conversion layer on a main emission surface.If the region-by-region treatment occurs after the arrangement of the conversion layers on the main emission surfaces, the conversion layers are applied, in particular in a composite, over the entire surface of the plurality of main emission layers. This is a cost-effective measure and also achieves good thermal contact between the semiconductor chip and the conversion layer, which in turn can promote the durability of the subsequent component. According to at least one embodiment, the method comprises, during treatment with a laser after the arrangement of the 2023PF01535 March 13, 2025P2023,1538 DE E -. 10 -Conversion layers, the following method step after providing the component composite: - Applying a structured mask between the radiation-emitting semiconductor chips, so that the main emission surfaces are free of the mask. For example, the mask comprises or consists of a photoresist. For example, the mask projects beyond the radiation-emitting semiconductor chips or is projected beyond them. After being arranged on the main emission surfaces, the conversion layers can still be present in a composite if the material of the conversion layers was also applied to the mask or projects beyond it. According to at least one embodiment, the method comprises the following method step after arranging a conversion layer on each main emission surface during treatment with a laser after arranging the conversion layers: - Globally reducing the thickness of the conversion layers.The global reduction comprises grinding or plasma etching and can, in particular, lead to a separation of the conversion layers if the thickness is reduced to such an extent that the conversion layers are separated from one another by the previously applied masking. According to at least one embodiment, the method comprises the following method steps after providing the component assembly when treating with a laser before arranging the conversion layers: - applying the conversion layers to an auxiliary carrier, - treating the surfaces of the conversion layers with a laser in certain regions, - separating the conversion layers on the auxiliary carrier, 2023PF01535 March 13, 2025P2023,1538 DE E -. 11 -- Detaching the conversion layers from the auxiliary carrier and arranging one conversion layer each on a main emission surface. The conversion layers are applied in particular in a composite manner to the auxiliary carrier. The separation can take place before or after the region-wise treatment with a laser. For example, the auxiliary carrier is a glass carrier or a film, for example a polymer film. For example, a glass carrier can be provided with a coating that facilitates the detachment of the conversion layer from the carrier. The region-wise treatment with a laser takes place in particular on the surfaces facing away from the auxiliary carrier and later from the main emission surfaces of the semiconductor chips. The separated, laser-treated conversion layers are arranged separately on the main emission surfaces.In this embodiment, the yield of matching semiconductor chips and conversion layers is increased, which simplifies or even eliminates the need for sorting the isolated conversion layers prior to their arrangement. According to at least one embodiment, the surface later facing the main emission surface of the semiconductor chips is treated with a laser in some regions. In this embodiment, the auxiliary carrier can remain connected to the conversion layer. According to at least one embodiment, the treatment of surfaces, in particular surfaces of the conversion layers facing away from the main emission surfaces, with a laser takes place depending on the 2023PF01535 March 13, 2025P2023,1538 DE E -. 12 -Color location distribution of the emission of the plurality of radiation-emitting semiconductor chips and / or the conversion layers arranged thereon. The method can thus be used to precisely adjust the color location of each radiation-emitting component, since the laser treatment takes place precisely where an adjustment of the degree of conversion leads to the necessary color location correction and thus to an overall narrower color location distribution. By knowing the color location distribution of the semiconductor chip and / or the conversion layer, a color location correction can be carried out in an emission-dependent manner. According to at least one embodiment, an emission distribution map of the component assembly, the component assembly with conversion layers arranged thereon, and / or the conversion layers is created prior to laser treatment.This means that the emission properties of the plurality of semiconductor chips alone, of the plurality of semiconductor chips with conversion layers arranged thereon, and / or of the conversion layers alone are measured, and the measured peak wavelengths or emission spectra are plotted depending on their location on the component assembly. Such a map reveals the color locus distribution of the semiconductor chips with or without a conversion layer, or of the conversion layers themselves. Based on the color locus distribution, it can be determined where a color locus correction—i.e., a reduction in the thickness of the conversion layers and / or a change in the phosphor—is necessary, and to what extent. 2023PF01535 March 13, 2025P2023,1538 DE E -. 13 -According to at least one embodiment, the emission properties are measured by electrically contacting and energizing the semiconductor chips in the component assembly. This can be done before and / or after the conversion layers are arranged on the main emission surfaces. Measurement after the conversion layer has been arranged is advantageous, since in this case, the properties of the conversion layer are also recorded. Alternatively, the semiconductor chips with conversion layers arranged thereon can be optically excited at a wavelength that is not absorbed by the conversion layers. Optical excitation is also conceivable for the conversion layers alone. In the latter case, a wavelength is expediently selected that is close to or identical to the emission wavelength of the semiconductor chips.According to at least one embodiment, regions on the surfaces of the conversion layers that are treated with a laser are determined from the emission distribution map. In particular, a laser treatment map is created based on the emission distribution map, according to which it can be controlled where and how intensively a laser treatment is carried out on the surface of the conversion layers. According to at least one embodiment, the conversion layers further comprise a matrix material. The phosphor contained in the conversion layer is thus in particular in particle form and is embedded in the matrix material. For example, phosphor particles can be completely surrounded by matrix material. 14 -The phosphor can be homogeneously distributed in the matrix material or have a gradient. According to at least one embodiment, the matrix material comprises a material from the group consisting of silicon dioxide, polysiloxane, epoxy resin, glass, and combinations thereof. In particular, the matrix material is polysiloxane. Polysiloxane is understood here and below to mean a polymer having a basic structure of silicon and oxygen. The polysiloxane is composed in particular of M units (R3SiO-), D units (-OR2SiO-), T units (-ORSiO2-), and / or Q units (-OSiO3-). The R radicals are each organic radicals, for example saturated or unsaturated hydrocarbon groups such as methyl groups, ethyl groups, or phenyl groups. According to at least one embodiment, the treatment with a laser is carried out by means of laser ablation or laser etching.In laser ablation, the local reduction in the thickness of the conversion layer and / or modification of the phosphor occurs solely by irradiating the surface with a laser and the associated material removal. In laser etching, the material removal initiated by laser irradiation is supported and / or completed by additional treatment with an etching medium. In this case, the phosphor and / or, if present, matrix material can be selectively removed. According to at least one embodiment, matrix material is selectively removed by laser treatment. The selective removal of matrix material can occur both by laser ablation and by laser etching. 15 -Both directly by irradiation with a laser and during subsequent treatment with an etching medium. By using a laser, particularly with the aid of the laser treatment card, it is possible to precisely control how much material is removed, i.e., in which area and by how much the thickness of the conversion layer is reduced. This enables very precise color coordinate matching. The material removal is achieved in particular by the laser introducing energy into the material at the surface of the conversion layer. This leads to molecular excitation, which upon relaxation leads to a change in the network, for example, to the breaking and / or alteration of chemical bonds or the formation of defects in the material. In this process, material is either dissolved out directly or dissolved out using an etching medium.Additionally or alternatively, the introduction of laser energy can chemically alter the phosphor, which is present, for example, in particle form in the conversion layer, which can result in altered conversion properties. According to at least one embodiment, the thickness of the conversion layer is locally reduced by an amount selected from the range of one-twentieth to one-third of the thickness. According to at least one embodiment, a laser with a pulse duration of less than 1. -9 s is used. This is a short or ultrashort pulse, which allows different amounts of material to be removed from different areas of the surface. With such pulse lengths in the nanosecond range or even smaller, 2023PF01535 13 March 2025P2023,1538 DE E - 16 -Control of the applied energy is easily possible. The wavelength of the laser is selected in particular so that the laser radiation is sufficiently absorbed by the material for the ablation for the desired material removal. Wavelengths from the UV or IR range are conceivable, for example. According to at least one embodiment, an absorption layer is applied to at least one surface of the conversion layer, for example to the surface of the conversion layer facing away from the main emission surface, before the region-wise treatment with a laser. Such an absorption layer can in particular improve the coupling of laser energy into the surface of the conversion layer and thus intensify the material removal and / or a change in the phosphor, in particular phosphor particles. In particular, such an absorption layer contains an absorption material that changes the interaction of the conversion layer with the laser beam.For example, the matrix material in the conversion layer is modified by applying an absorption layer in such a way that selective removal of the matrix material by treatment with a laser is enabled. Modifying the matrix material by an absorption layer comprises both a coating and a modification in which the matrix material and absorption material chemically react with each other at the common interface. An exemplary absorption layer contains or consists of SiN. According to at least one embodiment, a region of the conversion layer to be treated is first removed during laser etching. 17 -irradiated with the laser and then treated with an etching medium. The desired areas of the surface of the conversion layer are treated with the laser in such a way that material removal to the desired extent is possible. The treated, in particular pre-damaged, material can then be removed with the etching medium. According to at least one embodiment, during laser etching, an area of ​​the conversion layer to be treated is immersed in an etching medium and treated there with the laser. In this embodiment, the treatment of the surface, in particular the pre-damage, takes place in an etching medium. The laser is therefore used to control where and how much material removal should take place in the etching medium.This procedure is particularly advantageous when particularly strong material removal is desired, i.e. the thickness of the conversion layer is to be significantly reduced locally, since the energy input of the laser into the etching medium reduces the activation energy for the etching reaction. To obtain even better control over the intensity of the laser radiation on the surface and the energy input on and below the surface, overlapping laser beams can also be used. According to at least one embodiment, the etching medium is liquid or gaseous. In particular, the etching medium contains fluorine. According to at least one embodiment, a cleaning step is carried out after treatment with a laser. The cleaning step is carried out in particular chemically with a gas or liquid stream or with a plasma.2023PF01535 March 13, 2025P2023,1538 DE E -. 18 -Residues of the removed material, for example phosphor particles that are no longer incorporated in the conversion layer, can be easily removed. According to at least one embodiment, after the region-by-region laser treatment, an inorganic coating is applied to the surfaces facing away from the main emission surface. The inorganic coating can be a layer stack. This allows the optical coupling out of the radiation-emitting component to be adjusted. According to at least one embodiment, the method further comprises the step of singulating the resulting radiation-emitting components. A radiation-emitting component is further specified. A radiation-emitting component described here is produced, in particular, using a method described here.All features mentioned in connection with the method thus also apply to the radiation-emitting component and vice versa. According to at least one embodiment, the radiation-emitting component comprises a radiation-emitting semiconductor chip with a main emission surface. The radiation-emitting semiconductor chip is configured, in particular, to emit electromagnetic radiation of a first wavelength range, the so-called primary radiation, during operation. The primary radiation leaves the semiconductor chip, in particular, via the main emission surface.2023PF01535 March 13, 2025P2023,1538 DE E -. 19 -According to at least one embodiment, the radiation-emitting component further comprises a conversion layer arranged on the main emission surface and containing a phosphor. For example, the conversion layer is arranged directly on the main emission surface. The phosphor in the conversion layer is configured to at least partially absorb the primary radiation and emit electromagnetic radiation of a second wavelength range, the so-called secondary radiation. The radiation-emitting component thus has a total emission that leaves the conversion layer on its surface facing away from the main emission surface of the semiconductor chip and that comprises the secondary radiation or a mixture of secondary radiation and primary radiation. According to at least one embodiment, the radiation-emitting component emits white light.In particular, a radiation-emitting semiconductor chip that emits ultraviolet to blue light is combined with a conversion layer comprising a phosphor that converts the ultraviolet to blue light into yellow to red light. According to at least one embodiment of the radiation-emitting component, the phosphor comprises at least one material from the following group: Ce. 3+ doped garnets such as YAG and LuAG, for example (Y, Lu,Gd,Tb)3(Al 1-x ,Ga x )5O 12 :Ce 3+ ; Eu 2+ doped nitrides, for example (Ca,Sr)AlSiN3:Eu 2+ , Sr(Ca,Sr)Si2Al2N6:Eu 2+ (SCASN), (Sr,Ca)AlSiN3•Si2N2O:Eu 2+ , (Ca,Ba,Sr)2Si5N8:Eu 2+ , SrLiAl3N4:Eu 2+ , SrLi2Al2O2N2:Eu 2+ ; Ce 3+ doped nitrides, for example (Ca,Sr)Al(1-4x / 3)Si(1+x)N3:Ce; (x = 0.2 – 0.5);2023PF01535 13 March 2025P2023,1538 DE E - 20 - Eu 2+doped sulfides, (Ba,Sr,Ca)Si2O2N2:Eu 2+ , SiAlONs, nitrido-orthosilicates (for example AE 2-x-a RE x Eu a Si 1-y O 4-x-2y N x ), orthosilicates such as (Ba,Sr,Ca)2SiO4:Eu 2+ ; Chlorosilicates such as Ca8Mg(SiO4)4Cl2:Eu 2+ ; Mn 4+ doped fluorides, for example (K,Na)2(Si,Ti)F6:Mn 4+ ; Eu 2+ or Ce 3+ doped litho-silicates, such as (Li,Na,K,Rb,Cs)(Li3SiO4):E with E = Eu 2+ , Ce 3+ , (Sr,Li)Li3AlO4:Eu 2+ or SrLi3AlO4:Eu 2+ , and mixtures thereof. Alternatively or additionally, the phosphor comprises an aluminum-containing and / or silicon-containing phosphor, in particular selected from the following group: (Ba 1-x-y Sr x Ca y )SiO4:Eu 2+ (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), (Ba 1-x- y Sr x Ca y )3SiO5:Eu 2+ (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), Li2SrSiO4:Eu 2+ , oxo-nitrides such as (Ba1-x-y Sr. x That y )Si2O2N2:I 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), SrSiAl2O3N2:Eu 2+ , Yes 4-x That x Si6ON 10 :I 2+ (0 ≤ x ≤ 1), (Ba 1- x Sr. x )Y2Si2Al2O2N5:I 2+ (0 ≤ x ≤ 1), Sr x And (6-y) the y A y N (8-y) :I 2+ (0.05 ≤ x ≤ 0.5; 0.001 ≤ y ≤ 0.5), Ba3Si6O 12 N2:Me 2+ , And 6-z the z A z N 8-z :I 2+ (0 ≤ z ≤ 0.42), M x And 12-m-n the m+n A n N 16-n :I 2+ (M = Li, Mg, Ca, Y; x = m / v; v = Wertigkeit von M, x ≤ 2), M x And 12-m-n the m+n A n N 16-n :What 3+ , AE 2-x-a RE x I a And 1-y A 4-x-2y N x (AE = Sr, Ba, Ca, Mg; RE = Seltenerdmetallelemente), AE 2-x-a RE x I a And 1-y A 4-x-2y N x(AE = Sr, Ba, Ca, Mg; RE = Seltenerdmetallemente), Ba 2+3Si6O12N2:Eu orNitride wie La3Si6N 11 :Ce 3+ , (Ba 1-x-y Mr. x Here y )2Si5N8:Eu 2+ , (Ca 1-x- y Mr. x Ba y )AlSiN3:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), Sr(Sr 1- x Here x )Al2Si2N6:Eu 2+ (0 ≤ x ≤ 0.2), Sr(Sr 1-x Here x )Al2Si2N6:Ce 3+ (0 ≤ x ≤ 0.2) SrAlSi4N7:Eu 2+ , (Ba 1-x-y Mr. x Here y )SiN2:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Ba 1-x-y Mr. x Here y )SiN2:Ce 3+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Mr 1- x Here x )LiAl3N4:Eu 2+ (0 ≤ x ≤ 1), (Ba 1-x-y Mr. x Here y )Mg2Al2N4:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Ba 1-x-y Mr. x Here y )Mg3SiN4:Eu 2+(0 ≤ x ≤ 1; 0 ≤ y ≤ 1) and mixtures thereof. According to one embodiment, the phosphors mentioned may have a coating or size selected in particular from SiO2 and Al2O3.2023PF01535 13 March 2025P2023,1538 DE E - 21 -According to at least one embodiment, the phosphor is in particle form. According to at least one embodiment, the conversion layer has, in some areas, laser-treated depressions and / or regions comprising phosphor particles with modified conversion properties on a surface. In particular, the surface is arranged parallel to the main emission surface of the semiconductor chip. Such a surface can be distinguished from a ground surface, for example, in a scanning electron microscope, firstly due to the presence of the depressions and, secondly, due to the nature of the surface within the depressions. For example, the laser treatment can cause individual phosphor particles to protrude from the surface plane, which is not the case with a mechanically ground surface.The surface of the conversion layer can be the surface facing away from the main emission surface or the surface facing the main emission surface. In particular, the surface refers to the surface of the conversion layer facing away from the main emission surface. The depressions, in particular, have different heights. The conversion layer thus has a locally different thickness. In other words, the depressions form a three-dimensional structure on the surface of the conversion layer.2023PF01535 March 13, 2025P2023,1538 DE E -. 22 -Laser-treated regions with altered conversion properties comprise phosphor particles that are chemically altered compared to the phosphor of the conversion layer outside these regions and thus have altered conversion properties. According to at least one embodiment, a radiation-emitting component is specified, comprising a radiation-emitting semiconductor chip with a main emission surface, and a conversion layer arranged on the main emission surface and containing a phosphor, wherein the conversion layer has, on a surface in some regions, laser-treated depressions and / or regions comprising phosphor particles with altered conversion properties. Due to the laser-treated depressions in some regions, the conversion layer has thicknesses reduced to varying degrees in these regions.The conversion layer thus has different degrees of conversion and thus also different color coordinates depending on its thickness. Production-related color coordinate fluctuations of the semiconductor chip and / or the conversion layer can thus be compensated and / or corrected by such a conversion layer. In particular, the recesses are arranged depending on the emission or color coordinate distribution of the semiconductor chip and / or the conversion layer. Additionally or alternatively, the color coordinate can be adjusted by a modified conversion property in these areas. Thus, the radiation-emitting device described here has 2023PF01535 March 13, 2025P2023,1538 DE E -. 23 -Component exhibits a particularly high yield efficiency in the manufacturing process. According to at least one embodiment, the phosphor protrudes from a surface plane in the recesses. The surface plane is the surface within the recess. In particular, if the phosphor is embedded in the form of particles in a matrix, the matrix material is dissolved out, in particular selectively dissolved, by the laser treatment, thus exposing phosphor particles. Phosphor particles that cannot be removed by a cleaning step thus protrude from the surface plane and are no longer completely surrounded by matrix material. According to at least one embodiment, the conversion layer further comprises a matrix material. The matrix material is selected in particular from silicon dioxide, polysiloxane, epoxy resin, and combinations thereof. The phosphor is then embedded, for example, in particle form in the matrix material.Exemplary particle sizes of the phosphor are then selected from the range 0.5 µm to 35 µm (median phosphor diameter: d50). According to at least one embodiment, the matrix material has a concentration in the conversion layer that is lower in regions of the depressions than in the remaining regions. This concentration gradient is attributable to the laser treatment, during which, in particular, matrix material is dissolved out of the conversion layer, in particular selectively.2023PF01535 March 13, 2025P2023,1538 DE E -. 24 -According to at least one embodiment, the radiation-emitting semiconductor chip comprises a micro-LED. LED here and below is the abbreviation for light-emitting diode. In particular, the radiation-emitting semiconductor chip is a micro-LED. Micro-LEDs can have a width, a length, a thickness, and / or a diameter of less than or equal to 100 µm, in particular less than or equal to 70 µm, for example less than or equal to 50 µm, for example 10 µm. In particular, micro-LEDs, for example rectangular micro-LEDs, have an edge length, in particular in plan view of the layers of the layer stack, of a luminous area of ​​less than or equal to 70 µm, for example less than or equal to 50 µm.A micro-LED, for example, is a light-emitting diode in which a growth substrate has been removed, so that a thickness of the micro-LED is, for example, in the range from 1 µm inclusive to 10 µm inclusive, in particular from 1.5 µm inclusive to 10 µm inclusive. Further advantageous embodiments, refinements, and developments of the method for producing a plurality of radiation-emitting components and of the radiation-emitting component emerge from the following exemplary embodiments presented in conjunction with the figures. Figures 1a to 1f show, in schematic sectional views, exemplary embodiments of method steps of the method for producing a plurality of radiation-emitting components.2023PF01535 March 13, 2025P2023,1538 DE E -. 25 -Figure 2a shows an emission distribution map and a conversion layer according to an embodiment. Figure 2b shows a laser treatment map according to an embodiment. Figure 2c shows a schematic sectional view of a laser treatment according to an embodiment. Figure 3 shows a radiation-emitting component according to an embodiment. Identical, similar, or similarly acting elements are provided with the same reference numerals in the figures. The figures and the relative sizes of the elements shown in the figures are not to be considered to scale. Rather, individual elements, in particular layer thicknesses, may be exaggerated for clarity and / or clarity. Figures 1a and 1b show schematic sectional views of embodiments for providing a component assembly comprising a plurality of radiation-emitting semiconductor chips.As shown in Figure 1a, to provide a component assembly 100, a carrier 10 is first provided, on which a plurality of radiation-emitting semiconductor chips 20 are arranged at a distance from one another. The semiconductor chips 20 are arranged, for example, in a regular grid on the carrier 10. For the sake of clarity, only two radiation-emitting 2023PF01535 March 13, 2025P2023,1538 DE E -. 26 -Semiconductor chips 20 are shown. In this example, the carrier 10 is a Si carrier. The radiation-emitting semiconductor chips 20 each have an epitaxially grown semiconductor layer sequence with an active region. The active region is configured to emit electromagnetic radiation, the primary radiation. Thus, the radiation-emitting semiconductor chips 20 can emit electromagnetic radiation. In this example, the radiation-emitting semiconductor chips 20 emit ultraviolet to blue light. The electromagnetic radiation generated in the active region exits the radiation-emitting semiconductor chips 20 through a main emission surface 21. The main emission surfaces 21 are arranged parallel to a main extension plane of the radiation-emitting semiconductor chip 20. Additional elements can be present between the carrier 10 and the semiconductor chip 20.Figures 1a to 1f show, by way of example, a distribution geometry 11, a titanium layer 12, a mirror layer 13, which can be implemented, for example, as a metal mirror (Ag, Al, Au) or as a Bragg mirror, and connection pads 14 arranged between the semiconductor chips 20. These elements are to be understood purely as examples and can be omitted, replaced, or supplemented by further elements depending on the application. In a further method step, individual conversion layers 30, already treated with a laser, can now be arranged at a distance from one another on the main emission surfaces 21 (not shown here). For this purpose, the 2023PF01535 March 13, 2025P2023,1538 DE E -. 27 -Conversion layers 30 are pre-applied in a composite manner to an auxiliary carrier, for example, made of glass or polymer film. There, the conversion layers 30 are treated with a laser on their surfaces, which, after being arranged on the semiconductor chips 20, face away from the main emission surfaces 21, for example. The conversion layers 30 are then separated, detached from the auxiliary carrier, and arranged on the semiconductor chips 20. If the conversion layers 30 are to be arranged on the semiconductor chips 20 before laser treatment, the component assembly 100 can be prepared for this in an additional step, as shown, for example, in Figure 1b. Here, it can be seen that a masking layer 15, for example lithographically structured and formed from photoresist, is applied between the individual semiconductor chips 30. The main emission surfaces 21 remain free of the masking layer 15.The masking 15 projects beyond the semiconductor chips 20, so that cavities 16 are formed above the semiconductor chips 20, in particular above the main emission surfaces 21. The arrangement of the conversion layers 30 on the main emission surfaces 21 can now be carried out as shown in Figure 1c. The material of the conversion layer 30, in this example the matrix material polysiloxane, in which a phosphor is embedded in particle form, is introduced into the cavities 16 such that the conversion layers 30 initially project beyond the structured masking 15. Thus, a continuous composite of the conversion layers 30 is present.2023PF01535 March 13, 2025P2023,1538 DE E -. 28 -In principle, the treatment can now be carried out with a laser, thus creating depressions in the surface of the conversion layer 30 in certain areas. Alternatively, the thickness of the conversion layer 30 can also be reduced globally so that it is flush with the structured masking 15, thus exposing the masking 15 at its surface. A global reduction in thickness can be achieved, for example, by mechanical grinding or even a plasma. The result of such a step is shown in Figure 1d. The conversion layers 30 are now individually present in the cavities 16. After this step, the conversion layers 30 can be treated with a laser. Alternatively, the structured masking 15 can also be removed first, so that, for example, the connection pads 14 are exposed again, as shown in Figure 1e.However, the removal of the structured masking 15 can also be carried out together with a cleaning step performed after laser treatment. As shown in Figure 1f, if necessary, the thickness of the conversion layers 30 can first be reduced over the entire surface to achieve global color coordinate adjustment before laser treatment for local color coordinate correction is carried out. Regardless of the time at which the laser treatment of the conversion layers 30 is carried out, an emission distribution map 25 is first created. For this purpose, samples are taken either from the semiconductor chips 20, from the 2023PF01535 March 13, 2025P2023,1538 DE E -. 29 -Conversion layers 30, or semiconductor chips 20 with conversion layers 30 already arranged thereon, the emission properties are measured for each position in the component assembly 100 and plotted location-dependently. Figure 2a shows an example of an emission distribution map 25 of the component assembly with conversion layers 30 arranged thereon. The broad color locus distribution is recognizable in the various gray levels. A conversion layer 30 is arranged on such a component assembly 100, which is also shown in plan view in Figure 2a, right. To measure the emission properties, either the individual semiconductor chips 20 are electrically contacted and energized. To create an emission distribution map 25 of the semiconductor chips, the measurement is carried out before the application of the conversion layers 30; to measure the combined properties, it is carried out after the application of the conversion layers 30.Alternatively, to measure the combined emission properties, the semiconductor chips 20 can also be optically excited at a wavelength that is not absorbed or only absorbed to a small extent by the conversion layer 30, such as UV radiation. To measure the emission properties of the conversion layers 30, only these can be optically excited. Ideally, in this case, the emission properties of the semiconductor chips 20 are also measured separately. A laser treatment map 26 can be created from the emission distribution map 25, which essentially represents a negative image of the emission distribution map 25. 2023PF01535 March 13, 2025P2023,1538 DE E -. 30 -(Figure 2b). Using the laser treatment card 26 as a basis, the laser used to treat the surface of the conversion layer can be controlled such that the thickness of the conversion layer 30 is reduced by the desired amount in the desired areas in order to adjust the degree of conversion so that a uniform color coordinate results across the entire conversion layer 30. Figure 2c shows, in a schematic sectional view, the treatment with a laser 40, which irradiates the surface of a conversion layer 30 in order to ablate or pre-damage material there. Here, the conversion layer 30 is already arranged on a semiconductor chip 20; however, the treatment would also be conceivable if the conversion layer 30 were arranged on an auxiliary carrier and, after the laser treatment, were to be separated and arranged on a semiconductor chip 20. The treatment with the laser 40 can be carried out either by means of laser ablation.A laser 40 with a pulse duration of less than 1. -9 s and a suitable wavelength are used to irradiate the surface of the conversion layer and remove material in desired areas and to the desired extent, thus creating depressions 35. Alternatively, the treatment with the laser 40 can also be laser etching. In this case, either the surface is first irradiated with a laser 40 with a pulse duration of less than 1 -9 s and a suitable wavelength to irradiate the surface and then the surface is exposed to a gaseous or liquid etching medium in order to remove the etching agent.2023PF01535 13 March 2025P2023,1538 DE E - 31 -treated and thus pre-damaged areas and to create the depressions 35. Alternatively, it is also possible to expose the surface to be treated to a gaseous or liquid etching medium and simultaneously carry out irradiation with the laser 40. In this case, the energy input into the surface of the conversion layer 30 is further intensified by the laser and, for example, larger amounts of material from the conversion layer 30 can be removed and larger depressions 35 can be created. Regardless of the type of laser treatment, a cleaning step can then be carried out in which detached material is removed. After the region-by-region laser treatment, the radiation-emitting components 200 present in the component assembly 100 are separated. Figure 3 shows a radiation-emitting component 200 produced using the method in a schematic sectional view.For the sake of clarity, only the semiconductor chip 20 on which the conversion layer 30 is arranged is shown here, wherein the conversion layer 30 has depressions 35 in some regions, wherein the depressions 35 have different dimensions in this example. The thickness of the conversion layer 30 thus varies locally, so that the degree of conversion varies locally and thus a more uniform color location of the radiation-emitting component 200 is realized. The light scattering in the conversion layer 30 can also be positively influenced by the locally reduced thickness. The features and exemplary embodiments described in connection with the figures can be implemented according to further 2023PF01535 March 13, 2025P2023,1538 DE E -. 32 -Embodiments can be combined with one another, even if not all combinations are explicitly described. Furthermore, the embodiments described in conjunction with the figures can alternatively or additionally have further features in accordance with the description in the general part. The invention is not limited to these by the description based on the embodiments. Rather, the invention encompasses any new feature and any combination of features, which in particular includes any combination of features in the patent claims, even if this feature or this combination itself is not explicitly stated in the patent claims or embodiments. This patent application claims priority from German patent application 102024109328.5, the disclosure content of which is hereby incorporated by reference.

[0002] 2023PF01535 March 13, 2025P2023,1538 DE E - 33 - List of reference symbols 10 Träger11 Distribution geometry 12 Titanium layer 13 Mirror layer 14 Connection pad 15 Masking 16 Cavity 20 Semiconductor chip 21 Main emission area 25 Emission distribution map 26 Laser treatment map 30 Conversion layer 35 Recess 40 Laser 100 Component composite200 Radiation-emitting component

Claims

2023PF01535 March 13, 2025P2023,1538 DE E - 34 -Patent claims 1. A method for producing a plurality of radiation-emitting components (200), comprising the steps of: - providing a component assembly (100) with a plurality of radiation-emitting semiconductor chips (20), each having a main emission surface (21), - arranging a conversion layer (30) containing a phosphor on a main emission surface (21), - treating surfaces of the conversion layers (30) in regions with a laser (40), wherein a thickness of the conversion layers (30) is locally reduced and / or the phosphor is changed.

2. The method according to the preceding claim, wherein the treatment with a laser takes place before or after the arrangement of the respective conversion layer (30) on a main emission surface (21). 3.Method according to one of the preceding claims, wherein the treatment of surfaces of the conversion layers (30) with a laser takes place depending on the color locus distribution of the emission of the plurality of radiation-emitting semiconductor chips (20) and / or the conversion layers (30) arranged thereon.

4. Method according to one of the preceding claims, wherein, before the treatment with a laser, an emission distribution map (25) of the component assembly (100), the component assembly (100) with conversion layers (30) arranged thereon, and / or the conversion layers (30) is created.2023PF01535 March 13, 2025P2023,1538 DE E -. 35 -5. The method according to the preceding claim, wherein regions on the surfaces of the conversion layers (30) that are treated with a laser are determined from the emission distribution map (25).

6. The method according to one of the preceding claims, wherein the conversion layers (30) further comprise a matrix material.

7. The method according to the preceding claim, wherein the matrix material comprises a material from the following group: silicon dioxide, polysiloxane, epoxy resin, glass, and combinations thereof.

8. The method according to one of the preceding claims, wherein the treatment with a laser is carried out by means of laser ablation or laser etching.

9. The method according to one of claims 6 to 8, wherein matrix material is selectively removed by the treatment with a laser.

10. The method according to one of the preceding claims, wherein a laser with a pulse duration of less than 1 -9s is used.

11. Method according to one of the preceding claims, wherein an absorption layer is applied to at least one surface of the conversion layer before the region-wise treatment with a laser.

12. Method according to one of claims 8 to 11, wherein during the laser etching, first a region of the 2023PF01535 13. March 2025P2023,1538 DE E - 36 -Conversion layers (30) are irradiated with the laser and then treated with an etching medium.

13. Method according to one of claims 8 to 12, wherein during laser etching, a region of the conversion layers (30) to be treated is immersed in an etching medium and treated there with the laser.

14. Method according to one of claims 12 to 13, wherein the etching medium is liquid or gaseous.

15. Method according to one of the preceding claims, wherein a cleaning step is carried out after treatment with a laser.

16. A radiation-emitting component (200) comprising a radiation-emitting semiconductor chip (20) with a main emission surface (21), and a conversion layer (30) arranged on the main emission surface (21) and containing a phosphor, wherein the conversion layer (30) has, on a surface in regions, laser-treated depressions (35) and / or regions comprising phosphor particles with modified conversion properties.17.Radiation-emitting component (200) according to the preceding claim, wherein the phosphor protrudes from a surface plane in the recesses (35).

18. Radiation-emitting component (200) according to one of claims 16 to 17, wherein the conversion layer (30) further comprises a matrix material.2023PF01535 March 13, 2025P2023,1538 DE E -. 37 - 19. The radiation-emitting component (200) according to the preceding claim, wherein the matrix material has a concentration in the conversion layer (30) that is lower in regions of the recesses (35) than in the remaining regions.

20. The radiation-emitting component (200) according to any one of claims 16 to 19, wherein the radiation-emitting semiconductor chip (20) comprises a micro-LED.

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