Method for manufacturing a plurality of radiation-emitting components, and radiation-emitting component

Abstract

The invention relates to a method for manufacturing a plurality of radiation-emitting components, the method comprising the steps of: - providing a component assembly comprising a plurality of radiation-emitting semiconductor chips each having a main emission surface, - arranging a conversion layer containing a phosphor on each of the main emission surfaces, - applying particles to and / or embedding particles into surfaces of the conversion layers in some regions. The invention also relates to a radiation-emitting component.

Description

[0001] 2023PF01238 31 March 2025P2023,1488 WO N - 1 -Description METHOD FOR PRODUCING A PLURALITY OF RADIATION-EMITTING COMPONENTS AND RADIATION-EMITTING COMPONENT A method for producing a plurality of radiation-emitting components and a radiation-emitting component are specified. At least one object is to provide a method with improved efficiency for producing a plurality of radiation-emitting components. Furthermore, at least one object is to provide a radiation-emitting component with improved efficiency. These objects are achieved by a method and a radiation-emitting component according to the independent claims. According to at least one embodiment, a method for producing a plurality of radiation-emitting components is specified. A radiation-emitting component is configured to emit electromagnetic radiation.The emitted electromagnetic radiation has, for example, wavelengths from the visible range of the electromagnetic spectrum. The emitted radiation can, in particular, be radiation in the visible spectral range. According to at least one embodiment, the method comprises the step of providing a component assembly with a plurality of radiation-emitting semiconductor chips, each having a main emission surface.2023PF01238 March 31, 2025P2023,1488 WO N -. 2 -In a component assembly, the plurality of radiation-emitting semiconductor chips is arranged on a common carrier. In particular, the carrier with the plurality of radiation-emitting semiconductor chips is a wafer assembly, which is obtained, for example, after epitaxial growth of a semiconductor layer sequence of the radiation-emitting semiconductor chips. During the implementation of the method, the radiation-emitting components are completed, are initially arranged on the common carrier, and can then be singulated. The component assembly has, for example, a diameter of at least 5 inches, for example 6 inches or 8 inches. The radiation-emitting semiconductor chips each comprise, for example, an epitaxially grown semiconductor layer sequence. In particular, the semiconductor layer sequence has an active region in which electromagnetic radiation is generated.The electromagnetic radiation can leave the radiation-emitting semiconductor chip via the main emission surface of the radiation-emitting semiconductor chip. For example, the main emission surface is arranged parallel to a main extension plane of the radiation-emitting semiconductor chip and the component assembly. The main emission surface is, in particular, the surface of a semiconductor chip facing away from the carrier. According to at least one embodiment, the method further comprises the step of arranging a conversion layer containing a phosphor on a 2023PF01238 March 31, 2025P2023,1488 WO N -. 3 -Main emission surface. In this step, a conversion layer is applied to each main emission surface. Thus, a plurality of conversion layers are arranged on the plurality of main emission surfaces. The conversion layers are, in particular, produced jointly. It is possible for all conversion layers to be present in a composite and only separated after they have been arranged on the main emission surfaces during the process. In this embodiment, all conversion layers are arranged flatly, i.e., together and contiguously, on the main emission surfaces. In particular, the arrangement of the conversion layers is then carried out by doctor blade coating, slot die casting or slot coating, or spin coating.Alternatively, it is possible for the conversion layers to be separated prior to being arranged on the main emission surfaces and to be applied at a distance from one another to each main emission surface. In the following, in connection with the method, unless explicitly stated otherwise, the plurality of main emission surfaces and conversion layers is also meant, even if only one main emission surface or conversion layer is referred to. The conversion layer can further contain or consist of a phosphor. The term "phosphor" is understood here and below to mean a wavelength conversion material, i.e., a material designed to absorb and emit electromagnetic radiation. In particular, the phosphor absorbs 2023PF01238 March 31, 2025P2023,1488 WO N -. 4 -Phosphor: electromagnetic radiation that has a different wavelength maximum than the electromagnetic radiation emitted by the phosphor. For example, the phosphor absorbs radiation with a wavelength maximum at shorter wavelengths than the emission maximum and thus emits radiation with an emission maximum shifted towards the red. Pure scattering or pure absorption are not understood here as wavelength-converting. Furthermore, the phosphor can contain a phosphor material or be a mixture of different phosphor materials. If the conversion layer consists of a phosphor, this can be monolithic. Alternatively, the phosphor can be present as a plurality of phosphor particles, which are embedded, for example, in a matrix material. The phosphor particles can all have the same size or a distribution of sizes.For example, the median diameter of the phosphor particles (d50 value) can be in the range from 0.5 µm to 35 µm. According to at least one embodiment, the method further comprises the step of applying and / or introducing particles selected from phosphor particles, reflection particles, and combinations thereof, onto surfaces of the conversion layers in certain regions. During application, particles are arranged on regions of the surface and remain there, for example, by adhesion. During introduction (also: implantation), particles are embedded into the material of the conversion layer to a certain penetration depth. In both cases, 2023PF01238 March 31, 2025P2023,1488 WO N -. 5 -As well as with combined application and deposition, areas arise with an accumulation of particles on the surface of the conversion layer, which increases the number of particles in the upper region of the conversion layer or also its thickness in the corresponding region. In particular, particles are applied and / or introduced that are free of matrix material. "Area-wise" is to be understood as meaning that the application and / or deposition does not take place over the entire surface of the conversion layer, but only in certain lateral regions of the conversion layer. The application and / or introduction can thus take place with a certain structuring. After application and / or introduction, an individual conversion layer thus has, in particular, a varying thickness or a varying quantity of particles, in particular a varying quantity of phosphor particles and / or reflection particles, or superficially also a particle concentration.Here and below, a thickness is understood to mean the dimension of the conversion layer that runs perpendicular to its main extension plane or perpendicular to the main extension plane of the component assembly. An exemplary thickness of a conversion layer is in the range from 8 µm to 100 µm, in particular 8 µm to 40 µm, and an increased thickness is correspondingly higher. In particular, the thickness can be locally increased by up to 4 µm compared to a thickness of the conversion layer in regions where no particles were applied and / or introduced. The phosphor particles contain a phosphor that converts the wavelength of the primary radiation into a wavelength of the secondary radiation by absorption and re-emission. 6 -can convert. The phosphor particles contain, in particular, the same phosphor that is already present in the conversion layer, or a different phosphor. The presence of the additional phosphor particles can increase the conversion degree of the conversion layer in certain areas. Reflection particles generally do not have their own wavelength-converting properties, but rather reflect the primary or secondary radiation. Primary radiation reflected back into the conversion layer can, for example, strike phosphor particles there and be converted. The surface of the conversion layer onto which the particles are applied and / or introduced is generally arranged parallel to the main emission surface of the semiconductor chip. This can generally be the surface of the conversion layer facing away from the main emission surface or the surface of the conversion layer facing the main emission surface.In particular, the particles are applied and / or introduced onto the surface of the conversion layer that faces away from the main emission surface. In particular, the surface facing away from the main emission surface is the surface from which the total emission is coupled out in the radiation-emitting component produced by the method. According to at least one embodiment, a method for producing a plurality of radiation-emitting components is specified, comprising the steps of: - Providing a component assembly with a plurality of radiation-emitting semiconductor chips, each having 2023PF01238 March 31, 2025P2023,1488 WO N -. 7 -a main emission surface,- arranging a conversion layer containing a phosphor on each main emission surface,- applying and / or introducing particles selected from phosphor particles, reflection particles, and combinations thereof, in certain regions onto the surfaces of the conversion layers. Conversion layers are typically combined with radiation-emitting semiconductor chips, such as LED chips (LED: light-emitting diode), to generate light of a specific color, in particular white. For this purpose, blue-light-emitting semiconductor chips are often combined with a conversion material containing a phosphor. The radiation generated by the semiconductor chip, also called primary radiation, is at least partially absorbed by the phosphor in the conversion layer and converted into electromagnetic radiation with a different wavelength range, the so-called secondary radiation.The total emission of a radiation-emitting component is the secondary radiation in the case of full conversion, or a mixture of primary and secondary radiation in the case of partial conversion. To achieve a desired color coordinate of the total emission, a suitable combination of the wavelength of the primary radiation with the properties of the conversion layer, in particular the absorption and re-emission strength, i.e., the conversion efficiency, as well as the emission spectrum, must be present. However, due to the epitaxial process and the epitaxial apparatus, semiconductor chips in a component assembly exhibit a distribution or inhomogeneity of their main emission wavelength. Conversion layers can also influence the distribution of the 2023PF01238 March 31, 2025P2023,1488 WO N -. 8 -Absorption and re-emission strength as well as the emission spectrum, which is caused in particular by fluctuations in the phosphor concentration in the conversion layer and by fluctuations in its mechanical dimensions, especially its thickness. A random combination of semiconductor chip and conversion layer generally results in a broad color locus scatter instead of a desired, for example, narrowly defined white color locus of the total emission of the radiation-emitting component. A random combination of semiconductor chip and conversion layer occurs in particular when the conversion material is applied directly to a component assembly, for example by doctor blade coating (wafer-level conversion, WLC). In such a case, the thickness of the conversion layers can subsequently be globally adjusted or reduced, for example by grinding, and thus the expected degree of conversion can be globally changed.However, this cannot compensate for the aforementioned irregularities in the semiconductor chip or concentration or dimensional fluctuations of the conversion layers. Furthermore, such a grinding process can also create additional irregularities. Alternatively, the optical properties of semiconductor chips and individual conversion layers could be measured, and on this basis, only semiconductor chips and conversion layers could be combined that result in an overall emission with the desired color location. However, this procedure is very time-consuming and costly. 2023PF01238 March 31, 2025P2023,1488 WO N -. 9 -With the method described here, particles can be applied and / or introduced onto the conversion layer in regions, both in the case of conversion layers (WLC) applied in a composite form to the radiation-emitting semiconductor chips, and in the case of conversion layers arranged individually on the semiconductor chip, thus increasing the quantity of phosphor and / or reflective particles on a surface of the conversion layer. Furthermore, this can be done both with conversion layers produced in a composite form (of a layer) and with individual conversion layers produced arranged on a flat auxiliary carrier, which are later applied to a semiconductor chip. If the applied and / or introduced particles are or contain phosphor particles, the degree of conversion in the conversion layer can be increased in the regions where the particles are present.In the case of reflection particles, the coupling out of the radiation is improved locally. In both cases, fluctuations in the thickness of the conversion layers and the concentration of the phosphor in the conversion layers can be compensated for by the region-wise application and / or introduction of particles. With a suitable combination with semiconductor chips, the resulting color coordinate of the total emission can therefore be adjusted locally and individually. The method can thus be used to produce radiation-emitting components that have a locally adjusted conversion layer thickness or a locally adjusted conversion degree, thus allowing a distribution of the emission wavelength of the semiconductor chips as well as fluctuations in the thickness of the conversion layers and the concentration of the phosphor in the conversion layers to be compensated for. 10 -can be compensated. This compensation, in turn, results in a narrow color coordinate distribution and a high yield of the desired color coordinate of the radiation-emitting components produced using the method. The application and / or introduction of particles onto regions of the surface of the conversion layer can be achieved, for example, by a particle stream directed onto regions of the surface of the conversion layer. The particle stream has a diameter with which the desired areas on the surface can be provided with the additional particles. This allows the amount of phosphor and / or reflection particles to be locally increased and thus the color coordinate to be locally adjusted. In particular, a structure formed by the increased particle quantity and optionally increased thicknesses can be realized on the surfaces with high spatial resolution.The method can thus be used to produce a composite with radiation-emitting components that have a narrow color location distribution within the composite. Furthermore, the method, which can be carried out cost-effectively, produces radiation-emitting components that have improved color yield due to local color location correction or control. According to at least one embodiment, the incorporation and / or application does not take place over the entire surface of the conversion layer. According to at least one embodiment, the particles are applied and / or introduced without applying and / or introducing matrix material. The particles that are applied to-2023PF01238 March 31, 2025P2023,1488 WO N -. 11 -and / or introduced are thus free of matrix material, or no transfer of matrix material takes place in this process step. In other words, dry particles can be applied and / or introduced in this process step. According to at least one embodiment, the region-wise application and / or introduction of particles takes place before or after the arrangement of each conversion layer on a main emission surface. If the application and / or introduction takes place after the arrangement of the conversion layers on the main emission surfaces, the conversion layers are applied flatly to the plurality of main emission layers, in particular in a composite. This is a cost-effective measure and also realizes good thermal contact between the semiconductor chip and the conversion layer, which in turn can promote the durability of the subsequent component.According to at least one embodiment, when particles are applied and / or introduced after the conversion layers have been arranged, the method comprises the following method step after the component assembly has been provided: - applying a structured mask between the radiation-emitting semiconductor chips, so that the main emission surfaces are free of the mask, - arranging a conversion layer containing a phosphor on each main emission surface. For example, the mask comprises or consists of a photoresist. For example, the mask projects beyond the radiation-emitting semiconductor chips or is projected beyond them. After the arrangement, the conversion layers can still be present in a composite if the material of the 2023PF01238 March 31, 2025P2023,1488 WO N -. 12 -Conversion layers were also applied to the masking or projected beyond it, or the structuring of the mask creates a composite. According to at least one embodiment, when particles are applied and / or introduced after the arrangement of the conversion layers, the method comprises the following method step after the arrangement of a respective conversion layer: - globally reducing the thickness of the conversion layers. The global reduction comprises, in particular, grinding or plasma etching and can lead to the separation of the conversion layers if the thickness is reduced to such an extent that the conversion layers are separated from one another by the previously applied masking.According to at least one embodiment, the method comprises the following method steps after providing the component composite when applying and / or introducing particles before arranging the conversion layers: - applying the conversion layers to an auxiliary carrier, - applying and / or introducing particles in certain regions onto surfaces of the conversion layers, for example onto surfaces of the conversion layers facing away from the main emission surfaces, - separating the conversion layers on the auxiliary carrier, - detaching the conversion layers from the auxiliary carrier, and - arranging one conversion layer each on a main emission surface. The conversion layers are applied in particular in a composite manner to the auxiliary carrier. For example, the auxiliary carrier is a glass carrier or a film.2023PF01238 March 31, 2025P2023,1488 WO N -. 13 -for example, a polymer film. For example, the glass carrier can be provided with a coating that facilitates the detachment of the conversion layer from the carrier. According to at least one embodiment, the surface later facing the main emission surface of the semiconductor chips is treated. In this embodiment, the auxiliary carrier can remain connected to the conversion layer. For example, the carrier can be a film, particularly in the case of isolated conversion elements. The isolated conversion layers are arranged separately on the main emission surfaces. In this embodiment, the yield of matching semiconductor chips and conversion layers is increased, since compatibility or color location matching occurs through the region-by-region application and / or introduction of particles. This can simplify or even eliminate the need for sorting the isolated conversion layers prior to their arrangement.According to at least one embodiment, the region-wise application and / or introduction of the particles takes place depending on the color location distribution of the emission of the plurality of radiation-emitting semiconductor chips and / or the conversion layers arranged thereon. The method can thus be used to precisely adapt the color location of each radiation-emitting component, since the application and / or introduction of particles and thus the increase in the particle quantity takes place precisely where an adjustment of the degree of conversion leads to the necessary color location correction and thus to an overall narrower color location distribution. By knowing the color location distribution of the semiconductor chip, 2023PF01238 March 31, 2025P2023,1488 WO N -. 14 -and / or the conversion layer, a color locus correction can be carried out depending on the location. According to at least one embodiment, an emission distribution map of the component assembly, of the component assembly with conversion layers arranged thereon and / or of the conversion layers is created before the particles are applied and / or introduced. This means that the emission properties of the plurality of semiconductor chips alone, of the plurality of semiconductor chips with conversion layers arranged thereon and / or of the conversion layers alone are measured, and the measured peak wavelengths or emission spectra are recorded depending on their location on the component assembly. The emission properties of the conversion layers are measured in particular before they are singulated. The color locus distribution of the semiconductor chips with or without the conversion layer or of the conversion layers themselves can be derived from such a map.Based on the color location distribution, it can be determined at which points a color location correction, i.e. an increase or adjustment of the conversion by locally applying and / or introducing particles, is necessary and to what extent. According to at least one embodiment, the emission properties are measured by electrically contacting and energizing the semiconductor chips in the component assembly. This can be done before and / or after the conversion layers are arranged on the main emission surfaces. Measurement after the conversion layer has been arranged is advantageous, since in this case the properties of the conversion layer are also recorded. Alternatively, the semiconductor chips can be coated with 2023PF01238 March 31, 2025P2023,1488 WO N -. 15 -Conversion layers are optically excited with a wavelength that is not absorbed by the conversion layers. Optical excitation is also conceivable for the conversion layers alone. In the latter case, a wavelength is expediently selected that is close to or identical to the emission wavelength of the semiconductor chips. According to at least one embodiment, the emission distribution map is used to determine regions on the surfaces of the conversion layers to which the particles are applied and / or introduced, and the quantity of particles applied and / or introduced. In particular, a further map is created from the emission distribution map, which shows where and how many particles are to be applied to the conversion layers in order to achieve a desired color location. According to at least one embodiment, the conversion layers further comprise a matrix material.The phosphor contained in the conversion layer is thus present in particular in particle form and is embedded in the matrix material. For example, the phosphor in particle form can be completely surrounded by matrix material. The phosphor can be homogeneously distributed in the matrix material or have a gradient. According to at least one embodiment, the matrix material comprises a material from the group consisting of silicon dioxide, polysiloxane, epoxy resin, and combinations thereof. In particular, the matrix material is polysiloxane. Polysiloxane is understood here and below to mean a polymer having a basic structure of silicon and oxygen. 2023PF01238 March 31, 2025P2023,1488 WO N -. 16 -Polysiloxane is composed in particular of M units (R3SiO-), D units (-OR2SiO-), T units (-ORSiO2-), and / or Q units (-OSiO3-). The R radicals are each organic radicals, for example saturated or unsaturated hydrocarbon groups such as methyl groups, ethyl groups, or phenyl groups. According to at least one embodiment, the particles comprise phosphor particles having an average diameter selected from the range 0.5 µm up to and including 10 µm. Small additional phosphor particles are thus applied and / or incorporated. If the particles comprise reflection particles, these can also be formed even smaller than the phosphor particles. In particular, the particles have a smaller average diameter than the phosphor of the conversion layer, if this is also present in particle form.A phosphor in particle form, for example, has an average diameter in the range of 0.5 µm to 30 µm. By applying and / or introducing smaller particles in particular, the surface of the conversion layer does not become too rough, even in the corrected areas. In addition, smaller particles have better adhesion to the surface and / or can penetrate the surface of the conversion layer more easily. According to at least one embodiment, the particles are embedded in the conversion layers after application and / or introduction and / or adhere to the surfaces of the conversion layers. Particles are introduced in particular when the conversion layer has a 2023PF01238 March 31, 2025P2023,1488 WO N -. 17 -Matrix material, so that the particles are at least partially embedded in the matrix material. In both alternatives, the quantity of particles in the conversion layer is locally increased and leads to the desired local color location correction. According to at least one embodiment, the surfaces of the conversion layers are softened and / or their stickiness is increased using a chemical medium before the particles are applied and / or introduced. The chemical medium softens, in particular, the surface of the conversion layer or increases its stickiness so that the particles can adhere and / or penetrate better. The chemical medium is, in particular, a solvent, for example, heptane butyl acetate or PGMEA (1-methoxy-2-propyl acetate). Optionally, heating can take place after this step in order to remove the chemical medium, for example by evaporation.According to at least one embodiment, the surfaces of the conversion layers are heated before the application and / or introduction of the particles. This allows the mechanical properties of the surfaces to be changed; in particular, the surfaces can be softened so that the particles can adhere and / or penetrate better. According to at least one embodiment, the particles are accelerated towards the surfaces by means of a gas stream for application and / or introduction. The particles are transported to the surface, where they adhere and / or penetrate the surface. The acceleration by means of a gas stream can be carried out in a scanning manner and only at the points where particles are drawn towards the surface of the 2023PF01238 March 31, 2025P2023,1488 WO N -. 18 -Conversion layer acceleration can be controlled at points where an adjustment of the color location is necessary, particularly according to the determined emission distribution map. Furthermore, it is also possible to control how many particles are accelerated with the gas flow, i.e., by how much the quantity of particles is increased locally to achieve the desired color location. Furthermore, the energy of the particles can be adjusted to the material of the conversion layer via the speed at which the particles hit the surface, in particular to enable targeted penetration of the particles into the surface. The speed is selected, for example, depending on the matrix material of the conversion layer and / or its proportion in the conversion layer. According to one embodiment, the gas flow can also be formed by a highly volatile liquid that evaporates during spraying.According to at least one embodiment, after the application and / or introduction, a flat stamp is pressed onto the surface or a roller is rolled over the surface. This step can take place at room temperature or elevated temperature. An elevated temperature can, for example, be selected from the range inclusive of 125°C up to and including 250°C. In particular, an elevated temperature can comprise a temperature that is just below or at a curing temperature of the matrix material of the conversion layer. Thus, the applied and / or introduced particles are pressed deeper into the conversion layer and / or their adhesion to the surface is improved. According to at least one embodiment, after the application and / or introduction, the plurality of radiation-emitting semiconductor chips with conversion layers arranged thereon2023PF01238 March 31, 2025P2023,1488 WO N -. 19 -heated. Such a temperature treatment can be carried out, for example, if the conversion layer has not yet fully cured matrix material. This can fully cure at elevated temperature and at the same time better fix the applied and / or introduced particles. Depending on the matrix material, a temperature from the range inclusive of 125°C up to and including 250°C can be selected for heating. According to at least one embodiment, after the application and / or introduction of the particles, a further emission distribution map of the semiconductor chips with the conversion layers arranged thereon is created. This step serves in particular for control purposes. If necessary, the step of applying and / or introducing particles can be repeated for further color location correction. In particular, with repeated application and / or introduction of particles, the areas in which particles are applied and / or introduced can vary.It is thus possible for particles to be present on the entire surface of the conversion layer in a finished radiation-emitting component. However, due to different amounts of particles that were applied and / or introduced, a local structuring and possibly a varying thickness of the conversion layer still exists. According to at least one embodiment, after the application and / or introduction, an inorganic coating is applied to the surfaces of the conversion layers facing away from the main emission surface. The inorganic coating can be a layer stack. This allows the optical coupling out of the radiation-emitting component to be adjusted. 2023PF01238 March 31, 2025P2023,1488 WO N -. 20 -According to at least one embodiment, the method further comprises the step of singulating the resulting radiation-emitting components. Each radiation-emitting component thus obtained has a narrow color distribution due to the local color correction caused by the increased amount of particles on the surface of the conversion layer in some regions. A radiation-emitting component is further specified. A radiation-emitting component described here is produced, in particular, using a method described here. All features mentioned in connection with the method thus also apply to the radiation-emitting component, and vice versa. According to at least one embodiment, the radiation-emitting component has a radiation-emitting semiconductor chip with a main emission surface.The radiation-emitting semiconductor chip is configured, in particular, to emit electromagnetic radiation of a first wavelength range, the so-called primary radiation, during operation. The primary radiation leaves the semiconductor chip, in particular, via the main emission surface. According to at least one embodiment, the radiation-emitting component further comprises a conversion layer arranged on the main emission surface and containing a phosphor. For example, the conversion layer is arranged directly on the main emission surface. The phosphor in the conversion layer is configured to convert the primary radiation2023PF01238 March 31, 2025P2023,1488 WO N -. 21 -to at least partially absorb and emit electromagnetic radiation of a second wavelength range, the so-called secondary radiation. The radiation-emitting component thus has a total emission that leaves the conversion layer on its surface facing away from the main emission surface of the semiconductor chip, and which, as total emission, comprises the secondary radiation or a mixture of secondary radiation and primary radiation. According to at least one embodiment, the radiation-emitting component emits white light. In particular, for this purpose, a radiation-emitting semiconductor chip that emits ultraviolet to blue light is combined with a conversion layer that comprises a phosphor that converts the ultraviolet to blue light into yellow to red light. According to at least one embodiment of the radiation-emitting component, the phosphor comprises at least one material from the following group: Ce 3+doped garnets such as YAG and LuAG, for example (Y, Lu,Gd,Tb)3(Al 1-x ,Ga x )5O 12 :Ce 3+ ; Eu 2+ doped nitrides, for example (Ca,Sr)AlSiN3:Eu 2+ , Sr(Ca,Sr)Si2Al2N6:Eu 2+ (SCASN), (Sr,Ca)AlSiN3•Si2N2O:Eu 2+ , (Ca,Ba,Sr)2Si5N8:Eu 2+ , SrLiAl3N4:Eu 2+ , SrLi2Al2O2N2:Eu 2+ ; Ce 3+ doped nitrides, for example (Ca,Sr)Al(1-4x / 3)Si(1+x)N3:Ce; (x = 0.2 – 0.5);Eu 2+ doped sulfides, (Ba,Sr,Ca)Si2O2N2:Eu 2+ , SiAlONs, nitrido-orthosilicates (for example AE 2-x-a RE x Eu a Si 1-y O 4-x-2y N x ), orthosilicates such as (Ba,Sr,Ca)2SiO4:Eu 2+ ; Chlorosilicates such as Ca8Mg(SiO4)4Cl2:Eu 2+ ; Mn 4+ doped fluorides, for example (K,Na)2(Si,Ti)F6:Mn 4+ ; Eu 2+ or Ce 3+ doped litho-silicates, such as (Li,Na,K,Rb,Cs)(Li3SiO4):E with E = Eu 2+ , Ce 3+, (Sr,Li)Li3AlO4:Eu 2+ or SrLi3AlO4:Eu 2+ , and mixtures thereof.2023PF01238 31 March 2025P2023,1488 WO N - 22 - Alternatively or additionally, the phosphor comprises an aluminum-containing and / or silicon-containing phosphor, in particular selected from the following group: (Ba 1-x-y Sr x Ca y )SiO4:Eu 2+ (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), (Ba 1-x- y Sr x Ca y )3SiO5:Eu 2+ (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), Li2SrSiO4:Eu 2+ , oxo-nitrides such as (Ba 1-x-y Sr x Ca y )Si2O2N2:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), SrSiAl2O3N2:Eu 2+ , Ba 4-x Ca x Si6ON 10 :Eu 2+ (0 ≤ x ≤ 1), (Ba 1- x Sr x )Y2Si2Al2O2N5:Eu 2+ (0 ≤ x ≤ 1), Sr x Si (6-y) Al y O y N (8-y) :Eu 2+ (0.05 ≤ x ≤ 0.5; 0.001 ≤ y ≤ 0.5), Ba3Si6O 12 N2:Eu 2+ , Si6-z the z A z N 8-z :I 2+ (0 ≤ z ≤ 0.42), M x And 12-m-n the m+n A n N 16-n :I 2+ (M = Li, Mg, Ca, Y; x = m / v; v = Wertigkeit von M, x ≤ 2), M x And 12-m-n the m+n A n N 16-n :What 3+ , AE 2-x-a RE x I a And 1-y A 4-x-2y N x (AE = Sr, Ba, Ca, Mg; RE = Seltenerdmetallelemente), AE 2-x-a RE x I a And 1-y A 4-x-2y N x (AE = Sr,Ba, Ca, Mg; RE = Seltenerdmetallelemente), Ba 2+3Si6O12N2:Eu oder Nitride wie La3Si6N 11 :What 3+ , (Ba 1-x-y Sr. x That y )2Si5N8:I 2+ , (As 1-x- y Sr. x nay y )AlSiN3:I 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), Sr(Sr 1- x That x )Al2Si2N6:I 2+ (0 ≤ x ≤ 0.2), Sr(Sr 1-x That x )Al2Si2N6:Ce 3+(0 ≤ x ≤ 0.2) SrAlSi4N7:Eu 2+ , (Ba 1-x-y Mr. x Here y )SiN2:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Ba 1-x-y Mr. x Here y )SiN2:Ce 3+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Mr 1- x Here x )LiAl3N4:Eu 2+ (0 ≤ x ≤ 1), (Ba 1-x-y Mr. x Here y )Mg2Al2N4:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Ba 1-x-y Mr. x Here y )Mg3SiN4:Eu 2+(0 ≤ x ≤ 1; 0 ≤ y ≤ 1) and mixtures thereof. According to one embodiment, the phosphors mentioned can have a coating or size that is selected in particular from SiO2 and Al2O3. According to at least one embodiment, the phosphor is in particle form. According to at least one embodiment, the conversion layer has, in regions on a surface, particles that are selected from phosphor particles, reflection particles, and combinations thereof. 2023PF01238 March 31, 2025P2023,1488 WO N - 23 -Surface can be the surface facing away from the main emission surface or the surface facing the main emission surface. In particular, the surface refers to the surface of the conversion layer facing away from the main emission surface. Region-wise with respect to the particles is to be understood in particular as meaning that laterally, i.e. parallel to the main extension plane of the conversion layer, there are regions that contain the particles and regions that do not contain the particles or barely contain them. If the particles contain phosphor particles, the phosphor particles can be formed from the same phosphor as that contained in the conversion layer or different from it. In particular, the phosphor particles are formed from a phosphor selected from the phosphors mentioned above.If the particles alternatively or additionally contain reflection particles, these can be formed from titanium oxide, aluminum oxide, zirconium oxide, zinc oxide, or combinations thereof. The particles in particular have an average diameter in the range from 0.2 µm to 10 µm inclusive. For example, reflection particles have a diameter of approximately 0.4 µm to 1 µm, and phosphor particles have an average diameter in the range from 0.5 µm to 10 µm. "At the surface" is to be understood as meaning that the particles are present on the surface of the conversion layer and / or are implanted into the surface to a certain depth. According to at least one embodiment, regions are present laterally on a surface of the conversion layer. 24 -which contain the particles and regions which do not contain the particles. According to at least one embodiment, the thickness of the conversion layer is increased in regions which contain the particles. In particular, the surface of the conversion layer facing away from the main emission surface has local, i.e., regional, elevations. The more particles are present locally on and / or in the surface of the conversion layer, the more the thickness of the conversion layer is increased in this region. According to at least one embodiment, a radiation-emitting component is specified, comprising a radiation-emitting semiconductor chip with a main emission surface, and a conversion layer which contains a phosphor and is arranged on the main emission surface, wherein the conversion layer contains, in regions on one surface, particles which are selected from phosphor particles, reflection particles, and combinations thereof.Due to the particles present in certain areas, the conversion layer exhibits a locally varying conversion and thus locally adapted color coordinates. The locally varying conversion is achieved due to the different degrees of conversion caused by the locally increased amount of phosphor particles and / or by the presence of the reflection particles and thus the increased coupling of the total emission from the conversion layer. Manufacturing-related emission or color coordinate fluctuations of the semiconductor chip and / or the conversion layer can thus be compensated for by such a 2023PF01238 March 31, 2025P2023,1488 WO N -. 25 -Conversion layer can be compensated and / or corrected. In particular, increased particle quantities are arranged depending on the emission or color locus distribution of the semiconductor chip and / or the conversion layer. Thus, radiation-emitting components described here have a narrow color locus distribution of the total emission. Before they are singulated, such radiation-emitting components manufactured in a composite also have a narrow color locus distribution within the composite. According to at least one embodiment, a concentration of the particles decreases from the surface facing away from the main emission surface toward the surface of the conversion layer facing the main emission surface. In particular, the particles are present near the surface, i.e., at and / or on the surface of the conversion layer that faces away from the main emission surface of the semiconductor chip.According to at least one embodiment, the conversion layer further comprises a matrix material. The matrix material is selected in particular from silicon dioxide, polysiloxane, epoxy resin, and combinations thereof. The phosphor is then embedded, for example, in particle form in the matrix material. Exemplary average particle sizes of the phosphor are then selected from the range 0.5 µm to 30 µm. The particles can also be at least partially embedded in the matrix and / or present on the matrix, so that they are not completely enclosed by matrix material. The particles form the surface of the conversion layer, in particular in some regions. In these regions, 2023PF01238 March 31, 2025P2023,1488 WO N -. 26 -For example, the concentration of the matrix material is very low, or no matrix material is present at all. According to at least one embodiment, the matrix material has a concentration in the conversion layer that is lower in regions containing the particles than in regions that do not contain particles. This concentration gradient is attributable to the introduction and / or application of the particles, during which, in particular, matrix material is forced out of the corresponding regions. According to at least one embodiment, the radiation-emitting semiconductor chip comprises a micro-LED. LED is the abbreviation for light-emitting diode here and below. In particular, the radiation-emitting semiconductor chip is a micro-LED.Micro-LEDs can have a width, a length, a thickness, and / or a diameter of less than or equal to 100 micrometers, in particular less than or equal to 70 micrometers, for example less than or equal to 40 micrometers. In particular, micro-LEDs, for example rectangular micro-LEDs, have an edge length of a luminous surface, in particular in a plan view of the layers of the layer stack, of less than or equal to 70 micrometers, for example less than or equal to 40 micrometers. A micro-LED is, for example, a light-emitting diode in which a growth substrate has been removed, so that a thickness of the micro-LED is, for example, in the range from 1 micrometer up to and including 10 micrometers, in particular from 1.5 micrometers up to and including 10 micrometers.2023PF01238 March 31, 2025P2023,1488 WO N -. 27 -Further advantageous embodiments, configurations, and further developments of the method for producing a plurality of radiation-emitting components and of the radiation-emitting component emerge from the following exemplary embodiments illustrated in conjunction with the figures. Figures 1a to 1f show, in schematic sectional views, exemplary embodiments of method steps of the method for producing a plurality of radiation-emitting components. Figure 2 shows an emission distribution map and a conversion layer according to one exemplary embodiment. Figure 3 shows, in schematic sectional view, a radiation-emitting component according to one exemplary embodiment. Identical, similar, or equivalent elements are provided with the same reference numerals in the figures. The figures and the relative sizes of the elements illustrated in the figures are not to be considered to scale.Rather, individual elements, in particular layer thicknesses, may be exaggerated for clarity and / or clarity. Figures 1a and 1b show, in schematic sectional views, exemplary embodiments for providing a component assembly with a plurality of radiation-emitting semiconductor chips.2023PF01238 March 31, 2025P2023,1488 WO N -. 28 -As shown in Figure 1a, to provide a component assembly 100, a carrier 10 is first provided, on which a plurality of radiation-emitting semiconductor chips 20 are arranged at a distance from one another. The semiconductor chips are arranged, for example, in a regular grid on the carrier 10. For the sake of clarity, only two radiation-emitting semiconductor chips 20 are shown here. In this example, the carrier 10 is a Si carrier. The radiation-emitting semiconductor chips 20 each have an epitaxially grown semiconductor layer sequence with an active region. The active region is configured to emit electromagnetic radiation, the primary radiation. Thus, the radiation-emitting semiconductor chips 20 can emit electromagnetic radiation. In this example, the radiation-emitting semiconductor chips 20 emit ultraviolet to blue light.The electromagnetic radiation generated in the active region leaves the radiation-emitting semiconductor chips 20 through a main emission surface 21. The main emission surfaces 21 are arranged parallel to a main extension plane of the radiation-emitting semiconductor chip 20. Additional elements can be present between the carrier 10 and the semiconductor chip 20. Figures 1a to 1f show, by way of example, a distribution geometry 11, a titanium layer 12, a mirror layer 13, which can be implemented, for example, as a metal mirror (Ag, Al, Au) or as a Bragg mirror, and connection pads 14, which are arranged between the semiconductor chips 20. These elements are to be understood purely as examples and 2023PF01238 March 31, 2025P2023,1488 WO N -. 29 -can be omitted, replaced, or supplemented by further elements depending on the application. In a further method step, individual conversion layers 30, the surfaces of which are already provided with particles 35, can now be arranged at a distance from one another on the main emission surfaces 21 (not shown here). For this purpose, the conversion layers 30 are first applied in a composite to an auxiliary carrier, for example made of glass or polymer film. There, particles 35, which are selected from phosphor particles and / or reflection particles, are applied and / or introduced in regions onto the surfaces of the conversion layers 30, which, after being arranged on the semiconductor chips 20, face away from the main emission surfaces 21, for example. The conversion layers 30 are then individualized, detached from the auxiliary carrier, and arranged on the semiconductor chips 20.If the conversion layers 30 are to be arranged on the semiconductor chips 20 before the application and / or introduction of particles 35, the component assembly 100 can be prepared for this in an additional step, as shown, for example, in Figure 1b. Here, it can be seen that a mask 15, which is, for example, lithographically structured and formed in particular from photoresist, is applied between the individual semiconductor chips 30. The main emission surfaces 21 remain free of the mask 15. The mask 15 projects beyond the semiconductor chips 20, so that cavities 16 are formed above the semiconductor chips 20, in particular above the main emission surfaces 21.2023PF01238 March 31, 2025P2023,1488 WO N -. 30 -The arrangement of the conversion layers 30 on the main emission surfaces 21 can now be carried out as shown in Figure 1c. The material of the conversion layer 30, in this example the matrix material polysiloxane, in which a phosphor is embedded in particle form, is introduced into the cavities 16 such that the conversion layers 30 initially protrude beyond the structured masking 15. In this example, the introduction takes place by means of a doctor blade. Thus, a continuous bond of the conversion layers 30 is present. In principle, the application and / or introduction of particles 35 can now take place, thus increasing the thickness of the conversion layer 30 in certain regions. Alternatively, the thickness of the conversion layer 30 can also be reduced globally so that it is flush with the structured masking 15 and the masking 15 is thus exposed at its surface.A global reduction in thickness can be achieved, for example, by mechanical grinding or plasma. The result of such a step is shown in Figure 1d. The conversion layers 30 are now separated from one another in the cavities 16 due to the masking 15. After this step, the particles 35 can, in principle, be applied and / or introduced in certain regions. Alternatively, the structured masking 15 can also be removed first, so that, for example, the connection pads 14 are exposed again, as shown in Figure 1e. However, the removal of the structured masking 15 can also take place at a later time.2023PF01238 March 31, 2025P2023,1488 WO N -. 31 -As shown in Figure 1f, if necessary, the thickness of the conversion layers 30 can first be reduced across the entire surface to achieve global color coordinate adjustment before particles 35 are applied and / or introduced in certain areas for local color coordinate correction. Regardless of the time at which the particles 35 are applied and / or introduced in certain areas, an emission distribution map 25 is first created. For this purpose, the emission properties for each position in the component assembly 100 are measured, either from the semiconductor chips 20, from the conversion layers 30, or from semiconductor chips 20 with conversion layers 30 already arranged thereon, and plotted location-dependently. Figure 2 shows an example of an emission distribution map 25 of the component assembly with semiconductor chips 20 arranged thereon. The broad color coordinate distribution is recognizable by the various gray levels.To measure the emission properties, either the individual semiconductor chips 20 are electrically contacted and energized. To create an emission distribution map 25 of the semiconductor chips, the measurement is carried out before the conversion layers 30 are applied; to measure the combined properties, it is carried out after the conversion layers 30 have been applied. Alternatively, to measure the combined emission properties, the semiconductor chips 20 can also be optically excited at a wavelength that is not absorbed or only absorbed to a small extent by the conversion layer 30, such as UV radiation. To measure the emission properties of the conversion layers 30, 2023PF01238 March 31, 2025P2023,1488 WO N -. 32 -only these are optically excited. Ideally, in this case, the emission properties of the semiconductor chips 20 are also measured separately. Based on the emission distribution map 25, it is determined where and how many particles are to be applied to and / or introduced onto the surfaces. A further map is thus created, on the basis of which the particles 35 are applied to and / or introduced onto the surfaces. Optionally, the surface can be treated with a chemical medium, in particular a solvent, before application and / or introduction. This increases the stickiness or softness of the surface, whereby the particles adhere better and / or can penetrate or be implanted into the material of the conversion layer 30. For the application and / or introduction of the particles 35, they are accelerated towards the surface of the conversion layer 30. In this example, this is done with the aid of a gas flow and a certain pressure. The pressure orThe energy with which the particles impact the surface can be tailored to the material of the conversion layer 30 to ensure good implantation and / or adhesion of the particles. The content of particles 35 in the gas stream can also be tailored to the number of particles to be applied and / or introduced into which areas of the surface. For this purpose, the gas or particle stream scans the entire surface of the conversion layer 30 and, depending on the previously determined map, accelerates the desired number of particles 35 onto the surface in the desired areas. Thus, the quantity of particles on or at the surface of the conversion layer is locally controlled by the 2023PF01238 March 31, 2025P2023,1488 WO N -. 33 -desired amount and the color location of the total emission is corrected accordingly. Optionally, after the application and / or introduction, a flat stamp is pressed or a roller is rolled onto or over the treated surface. This better fixes the particles 35 in or on the surface of the conversion layer 30 and smoothes the surface somewhat. Furthermore, optionally, after the application and / or introduction of the particles 35, the component assembly 100 with the treated conversion layers 30 arranged thereon is heated. This can be particularly useful if the conversion layers 30 have a matrix material that is not yet fully cured, which is cured during this step. The curing then also leads to an even better fixation of the applied and / or introduced particles 35.For control purposes, an additional emission distribution map is optionally created after the method has been carried out, thus determining whether further correction of the color location is necessary. If necessary, the method step of applying and / or introducing the radiation-emitting components in regions can be repeated for further correction. Finally, the radiation-emitting components 200 thus produced are separated. Figure 3 shows a schematic sectional view of a radiation-emitting component 200. For the sake of clarity, only the semiconductor chip 20 and the conversion layer 30 are shown here. In this example, the conversion layer 30 contains a matrix material, 2023PF01238 March 31, 2025P2023,1488 WO N -. 34 -for example, polysiloxane, and a phosphor 31, which here is embedded in particle form in the matrix material. On the surface of the conversion layer 30, which faces away from the semiconductor chip 20 or the main emission surface 21, the conversion layer 30 has particles 35 in some regions. In this example, the particles 35 are phosphor particles that contain the same phosphor as the phosphor 31 of the conversion layer. However, the particles 35 have a smaller diameter than the phosphor 31 in particle form. For example, the phosphor 31 in particle form has an average diameter in the range 0.5 µm to 30 µm, and the particles 35 in the range 0.5 µm up to and including 10 µm. The conversion layer 30 has a thickness of approximately 30 µm, although the thickness may be higher in areas containing particles, for example up to 34 µm.As can also be seen from Figure 3, the amount of particles 35 on the surface of the conversion layer 30 can be increased to varying degrees. Here, for example, on the left of the conversion layer, an area with a high density of particles 35 is shown, which leads to a strong color coordinate adaptation. In the middle area of ​​the conversion layer 30, the amount of added particles is smaller, and the color coordinate adaptation is therefore less pronounced. On the right of the conversion layer 30, the case of a combined introduction and application of particles 35 is shown. While some particles have completely penetrated the conversion layer and are surrounded by matrix material, other particles adhere to the surface of the conversion layer 30.2023PF01238 March 31, 2025P2023,1488 WO N -. 35 -The radiation-emitting component 200 shown in Figure 3 has a narrow color locus distribution of the total emission. This is due to the regionally increased quantity of particles 35 of the conversion layer 30, which locally increases the degree of conversion and thus compensates for color locus corrections to compensate for fluctuations in the emission of the semiconductor chip 20 or the conversion layer 30. A high color yield is thus achieved in components produced in this way. The features and exemplary embodiments described in connection with the figures can be combined with one another according to further exemplary embodiments, even if not all combinations are explicitly described. Furthermore, the exemplary embodiments described in connection with the figures can alternatively or additionally have further features according to the description in the general part. The invention is not limited to these by the description based on the exemplary embodiments.Rather, the invention encompasses every novel feature and every combination of features, including in particular every combination of features in the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments. This patent application claims priority from German patent application 102024109295.5, the disclosure of which is hereby incorporated by reference. 2023PF01238 March 31, 2025P2023,1488 WO N -. 36 - List of reference symbols 10 Träger 11 Distribution geometry 12 Titanium layer 13 Mirror layer 14 Connection pad 15 Masking 16 Cavity 20 Semiconductor chip 21 Main emission area 25 Emission distribution map 30 Conversion layer 31 Phosphor 35 Particles 100 Component assembly 200 Radiation-emitting component

Claims

2023PF01238 31 March 2025P2023,1488 WO N - 37 -Patent claims 1. Method for producing a plurality of radiation-emitting components (200), comprising the steps of: - providing a component assembly (100) with a plurality of radiation-emitting semiconductor chips (20), each having a main emission surface (21), - arranging a conversion layer (30) containing a phosphor (31) on a main emission surface (21), - applying and / or introducing particles (35) selected from phosphor particles, reflection particles, and combinations thereof, in certain regions onto surfaces of the conversion layers (30).

2. Method according to the preceding claim, wherein the application and / or introduction does not occur over the entire surface of the conversion layer (30).

3. Method according to one of the preceding claims, wherein the application and / or introduction of the particles (35) occurs without applying and / or introducing matrix material. 4.Method according to one of the preceding claims, wherein the application and / or introduction of the particles (35) takes place before or after arranging the respective one conversion layer (30) on a main emission surface (21).

5. Method according to one of the preceding claims, wherein the application and / or introduction of the particles (35) in regions depends on the color locus distribution of the emission of the plurality of radiation-emitting semiconductor chips (20).2023PF01238 March 31, 2025P2023,1488 WO N -. 38 -and / or the conversion layers (30) arranged thereon.

6. The method according to one of the preceding claims, wherein, prior to the application and / or introduction of the particles (35), an emission distribution map (25) of the component assembly (100), of the component assembly (100) with the conversion layers (30) arranged thereon, and / or of the conversion layers (30) is created.

7. The method according to the preceding claim, wherein the emission distribution map (25) is used to determine areas on the surfaces of the conversion layers (30) onto which the particles (35) are applied and / or introduced, and the quantity of particles (35) applied and / or introduced.

8. The method according to one of the preceding claims, wherein the conversion layers (30) further comprise a matrix material.

9. The method according to the preceding claim, wherein the matrix material comprises a material from the following group: silicon dioxide, polysiloxane, epoxy resin, and combinations thereof. 10.Method according to one of the preceding claims, wherein the particles (35) comprise phosphor particles having an average diameter selected from the range inclusive of 0.5 µm up to and including 10 µm.

11. Method according to one of the preceding claims, wherein the particles (35) are, after application and / or introduction into the 2023PF01238 March 31, 2025P2023,1488 WO N -. 39 -Conversion layers (30) are embedded and / or adhere to the surfaces of the conversion layers (30).

12. Method according to one of the preceding claims, wherein the surfaces of the conversion layers (30) are softened by means of a chemical medium before the particles (35) are applied and / or introduced and / or their adhesiveness is increased.

13. Method according to one of the preceding claims, wherein the particles (35) are accelerated towards the surfaces by means of a gas stream for the application and / or introduction.

14. Method according to one of the preceding claims, wherein after the application and / or introduction, a flat stamp is pressed onto the surfaces or a roller is rolled over the surfaces, and / or wherein after the application and / or introduction, the plurality of radiation-emitting semiconductor chips (20) with conversion layers (30) arranged thereon is heated.A radiation-emitting component (200), comprising a radiation-emitting semiconductor chip (20) with a main emission surface (21), and a conversion layer (30) containing a phosphor (31) and arranged on the main emission surface (21), wherein the conversion layer (30) contains, in regions on a surface, particles (35) selected from phosphor particles, reflection particles, and combinations thereof.2023PF01238 March 31, 2025P2023,1488 WO N -. 40 -16. The radiation-emitting component (200) according to the preceding claim, wherein a concentration of the particles (35) decreases from the surface facing away from the main emission surface (21) towards the surface of the conversion layer (30) facing the main emission surface (21).

17. The radiation-emitting component (200) according to any one of claims 15 to 16, wherein the conversion layer (30) further comprises a matrix material.

18. The radiation-emitting component (200) according to the preceding claim, wherein the matrix material has a concentration in the conversion layer (30) that is lower in regions having the particles (30) than in regions not having any particles (35).

19. The radiation-emitting component (200) according to any one of claims 15 to 18, wherein the radiation-emitting semiconductor chip (20) comprises a micro-LED.Radiation-emitting component (200) according to one of claims 15 to 19, wherein on a surface of the conversion layer (30) there are laterally regions which contain the particles (25) and regions which do not contain the particles (35).

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