Adhesive film for semiconductor, method for manufacturing same, dicing die-bonding integrated film, and method for manufacturing semiconductor device

Abstract

Disclosed is an adhesive film for a semiconductor. This adhesive film for a semiconductor contains an epoxy resin, a phenol resin, and a modified elastomer. The modified elastomer is a reaction product of a phenol resin and an elastomer having an epoxy group. The adhesive film for a semiconductor may be used in order to body a semiconductor chip to a substrate while burying another semiconductor chip. The adhesive film for a semiconductor may be used in order to bond a semiconductor chip to another semiconductor chip while burying a portion or the entirety of a wire that is connected to the other semiconductor chip.

Description

Adhesive film for semiconductor and manufacturing method thereof, integrated dicing and die bonding film, and manufacturing method of semiconductor device

[0001] The present disclosure relates to an adhesive film for semiconductors and a method for manufacturing the same, a dicing and die bonding integrated film, and a method for manufacturing a semiconductor device.

[0002] Stacked MCPs (Multi Chip Packages), which have high capacity due to semiconductor chips stacked in multiple layers, are becoming popular. Examples of stacked MCPs include wire-embedded and chip-embedded semiconductor packages. A semiconductor package structure in which wires are embedded in a semiconductor adhesive film is sometimes referred to as FOW (Film Over Wire). A semiconductor package structure in which semiconductor chips are embedded in a semiconductor adhesive film is sometimes referred to as FOD (Film Over Die). One known example of a semiconductor package employing FOD is one that has a controller chip arranged in the bottom layer and an adhesive film for semiconductors in which the controller chip is embedded (see Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2014-175459

[0004] In the manufacture of semiconductor packages having a FOD or FOW structure, it is necessary for the wires or semiconductor chips to be sufficiently embedded in the adhesive film. The viscosity of adhesive films for semiconductors tends to decrease rapidly when heated (e.g., at 60 to 150°C). While adhesive films with reduced viscosity can exhibit good embedding properties, excessively low viscosity can cause problems such as bleeding, where the adhesive film protrudes from the edge of the semiconductor chip.

[0005] Therefore, a main object of the present disclosure is to provide an adhesive film for a semiconductor that can suppress a decrease in viscosity due to heating without significantly changing the types and amounts of raw materials.

[0006] After extensive research, the inventors discovered that by using a specific modified elastomer as a component of an adhesive film for semiconductors, it is possible to suppress the decrease in viscosity of the adhesive film for semiconductors due to heating without significantly changing the type and amount of raw materials, and thus completed the invention of the present disclosure.

[0007] The present disclosure provides adhesive films for semiconductors according to [1] to [5], a method for manufacturing an adhesive film for semiconductors according to [6], an integrated dicing and die bonding film according to [7], and a method for manufacturing a semiconductor device according to [8] and [9]. [1] An adhesive film for semiconductors comprising an epoxy resin, a phenolic resin, and a modified elastomer, wherein the modified elastomer is a reaction product of an elastomer having an epoxy group and the phenolic resin. [2] The adhesive film for semiconductors according to [1], further comprising an elastomer. [3] The adhesive film for semiconductors according to [2], further comprising an inorganic filler. [4] The adhesive film for semiconductors according to any one of [1] to [3], which is used for bonding a semiconductor chip to a substrate while embedding another semiconductor chip. [5] The adhesive film for semiconductors according to any one of [1] to [3], which is used for bonding a semiconductor chip to another semiconductor chip while embedding part or all of the wires connected to the other semiconductor chip. [6] A method for producing an adhesive film for a semiconductor, comprising the steps of: reacting an elastomer having an epoxy group with a phenolic resin to obtain a modified elastomer; mixing an epoxy resin, a phenolic resin, and the obtained modified elastomer to obtain an adhesive composition containing the epoxy resin, the phenolic resin, and the modified elastomer; and forming an adhesive film for a semiconductor using the obtained adhesive composition. [7] An integrated dicing and die bonding film, comprising: a dicing film; and an adhesive film for a semiconductor according to any one of [1] to [3] provided on the dicing film. [8] A method for producing a semiconductor device, comprising the step of adhering a second semiconductor chip to a substrate on which a first semiconductor chip is mounted using the adhesive film for a semiconductor according to any one of [1] to [3], wherein the first semiconductor chip is embedded in the adhesive film for a semiconductor.[9] A method for manufacturing a semiconductor device, comprising a step of adhering a second semiconductor chip to a first semiconductor chip with the adhesive film for semiconductor according to any one of [1] to [3], wherein a wire is connected to the first semiconductor chip, and the wire is partially or entirely embedded in the adhesive film for semiconductor.

[0008] According to the present disclosure, an adhesive film for a semiconductor is provided that can suppress a decrease in viscosity due to heating without significantly changing the types and amounts of raw materials. Also, according to the present disclosure, an integrated dicing and die bonding film using such an adhesive film for a semiconductor is provided. Furthermore, according to the present disclosure, a method for manufacturing a semiconductor device using such an integrated dicing and die bonding film is provided.

[0009] FIG. 1 is a schematic cross-sectional view showing one embodiment of an adhesive film. FIG. 2 is a schematic cross-sectional view showing one embodiment of a laminate including an adhesive film. FIG. 3 is a schematic cross-sectional view showing one embodiment of a laminate including an adhesive film. FIG. 4 is a schematic cross-sectional view showing one embodiment of a semiconductor device. FIG. 5 is a process diagram showing one embodiment of a method for manufacturing a semiconductor device. FIG. 6 is a process diagram showing one embodiment of a method for manufacturing a semiconductor device. FIG. 7 is a process diagram showing one embodiment of a method for manufacturing a semiconductor device. FIG. 8 is a process diagram showing one embodiment of a method for manufacturing a semiconductor device. FIG. 9 is a process diagram showing one embodiment of a method for manufacturing a semiconductor device. FIG. 10 is a schematic cross-sectional view showing another embodiment of a semiconductor device. FIG. 11 is a schematic cross-sectional view showing another embodiment of a semiconductor device. FIG. 12 is a graph showing the viscosity changes of the adhesive films of Examples 1 and 2 and Comparative Example 1.

[0010] The present disclosure is not limited to the following examples. In the following examples, the components (including steps, etc.) are not essential unless specifically stated. The size of the components in each drawing is conceptual, and the relative size relationships between the components are not limited to those shown in each drawing. The numerical values ​​and ranges exemplified below also do not limit the present disclosure.

[0011] In this specification, a numerical range indicated using "to" indicates a range that includes the numerical values ​​before and after "to" as the minimum and maximum values, respectively. In numerical ranges described in stages in this specification, the upper or lower limit value described in one numerical range may be replaced with the upper or lower limit value of another numerical range described in stages. In numerical ranges described in this specification, the upper or lower limit value of that numerical range may be replaced with a value shown in the examples.

[0012] In this specification, (meth)acrylate means acrylate or the corresponding methacrylate, and the same applies to other similar expressions such as (meth)acrylic acid ester, (meth)acryloyl group, (meth)acrylic copolymer, etc.

[0013] Unless otherwise specified, the materials exemplified below may be used alone or in combination of two or more. When a plurality of substances corresponding to each component are present in the composition, the content of each component in the composition means the total amount of the plurality of substances present in the composition, unless otherwise specified.

[0014] [Adhesive Film for Semiconductor (Adhesive Film) and Its Manufacturing Method] FIG. 1 is a schematic cross-sectional view showing one embodiment of an adhesive film. The adhesive film 10 shown in FIG. 1 contains an epoxy resin (hereinafter sometimes referred to as "component (A)"), a phenolic resin (hereinafter sometimes referred to as "component (B)"), and a modified elastomer (hereinafter sometimes referred to as "component (C)"). In addition to components (A), (B), and (C), the adhesive film 10 may contain an elastomer (hereinafter sometimes referred to as "component (D)"), an inorganic filler (hereinafter sometimes referred to as "component (E)"), a curing accelerator (hereinafter sometimes referred to as "component (F)"), a coupling agent (hereinafter sometimes referred to as "component (G)"), and other components. The adhesive film 10 may be a film formed from an adhesive composition containing components (A), (B), and (C). The adhesive film 10 may be in a semi-cured (B-stage) state. The adhesive film 10 may be in a cured (C-stage) state after a curing treatment.

[0015] Component (A): Epoxy Resin Examples of component (A) include bisphenol A epoxy resins, bisphenol F epoxy resins, bisphenol S epoxy resins, phenol novolac epoxy resins, cresol novolac epoxy resins, bisphenol A novolac epoxy resins, bisphenol F novolac epoxy resins, stilbene epoxy resins, triazine skeleton-containing epoxy resins, fluorene skeleton-containing epoxy resins, triphenolmethane epoxy resins, biphenyl epoxy resins, xylylene epoxy resins, biphenyl aralkyl epoxy resins, naphthalene epoxy resins, diglycidyl ether compounds of polyfunctional phenols and polycyclic aromatics such as anthracene, etc. Among these, component (A) may contain cresol novolac epoxy resins, bisphenol F epoxy resins, bisphenol A epoxy resins, or combinations thereof, from the viewpoints of film tackiness, flexibility, etc.

[0016] Component (A) may contain a liquid epoxy resin that is liquid at 30°C (an epoxy resin with a softening point of 40°C or lower). That is, component (A) may be a combination of a liquid epoxy resin and a solid epoxy resin that is solid at 30°C (an epoxy resin with a softening point of more than 40°C). In this specification, the softening point refers to a value measured by the ring and ball method in accordance with JIS K7234:1986. The content of the liquid epoxy resin may be 3 to 20 mass% based on the total amount of the adhesive film. When component (A) contains a liquid epoxy resin, the flexibility of the adhesive film tends to be improved. Furthermore, when a liquid epoxy resin and a solid epoxy resin are combined, the embeddability of semiconductor chips and wires tends to be improved.

[0017] Examples of commercially available liquid epoxy resins include EXA-830CRP (trade name, manufactured by DIC Corporation, liquid at 30°C), YDF-8170C (trade name, manufactured by Nippon Steel Chemical & Material Co., Ltd., liquid at 30°C), and EP-4088S (trade name, manufactured by ADEKA Corporation, liquid at 30°C).

[0018] The epoxy equivalent of component (A) is not particularly limited, but may be 90 to 300 g / eq or 110 to 290 g / eq. When the epoxy equivalent of component (A) is within this range, the adhesive composition tends to have good flowability when forming an adhesive film while maintaining the bulk strength of the adhesive film.

[0019] Component (B): Phenolic Resin Examples of component (B) include novolak phenolic resins obtained by condensing or co-condensing phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol and / or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene with compounds having an aldehyde group such as formaldehyde under an acidic catalyst; phenol aralkyl resins and naphthol aralkyl resins synthesized from phenols such as allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolak, and phenol and / or naphthols with dimethoxyparaxylene or bis(methoxymethyl)biphenyl; and the like. Component (B) may include a phenylaralkyl phenolic resin, a phenol novolak resin, or a combination thereof.

[0020] The hydroxyl equivalent of component (B) may be 70 g / eq or more, or 70 to 300 g / eq. When the hydroxyl equivalent of the phenolic resin is 70 g / eq or more, the storage modulus of the adhesive film tends to be further increased. When the hydroxyl equivalent of the phenolic resin is 300 g / eq or less, foaming and outgassing can be further suppressed.

[0021] Examples of commercially available products of component (B) include PSM-4326 (trade name, manufactured by Gun-ei Chemical Industry Co., Ltd., softening point: 120°C), J-DPP-140 (trade name, manufactured by JFE Chemical Corporation, softening point: 140°C), GPH-103 (trade name, manufactured by Nippon Kayaku Co., Ltd., softening point: 99 to 106°C), MEH-7800M (trade name, manufactured by Meiwa Chemical Industry Co., Ltd., softening point: 80°C), J-DPP-85 (trade name, manufactured by JFE Chemical Corporation, softening point: 85°C), and MEH-5100-5S (trade name, manufactured by Meiwa Chemical Industry Co., Ltd., softening point: 65°C).

[0022] From the viewpoint of curability, the ratio of the epoxy equivalent of component (A) to the hydroxyl equivalent of component (B) (epoxy equivalent:hydroxyl equivalent) may be 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45. When the equivalent ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained. When the equivalent ratio is 0.70 / 0.30 or less, excessive viscosity can be prevented, and more sufficient fluidity can be obtained.

[0023] The softening point of component (B) may be 50 to 200° C. or 60 to 150° C. Component (B) having a softening point of 200° C. or less tends to have good compatibility with component (A).

[0024] The total content of the (A) component and the (B) component may be 5% by mass or more, 10% by mass or more, 15% by mass or more, 20% by mass or more, 25% by mass or more, 30% by mass or more, 35% by mass or more, or 40% by mass or more, based on the total amount of the adhesive film. When the total content of the (A) component and the (B) component is 15% by mass or more, based on the total amount of the adhesive film, the adhesive strength of the adhesive film tends to be improved. From the viewpoint of film formability, the total content of the (A) component and the (B) component may be 80% by mass or less, 75% by mass or less, 70% by mass or less, 65% by mass or less, or 60% by mass or less, based on the total amount of the adhesive film.

[0025] Component (C): Modified Elastomer Component (C) is a reaction product obtained by reacting an elastomer having epoxy groups (or glycidyl groups) with a phenolic resin. The modified elastomer can also be said to be a modified product in which at least a portion of the epoxy groups of an elastomer having epoxy groups have been modified with a phenolic resin. By including component (C) in the adhesive film, it is possible to suppress a decrease in viscosity due to heating. Furthermore, component (C) can be obtained using component (B) above and component (D) described below, and there is no need to significantly change the types and amounts of raw materials. Therefore, by using component (C), it is possible to suppress the occurrence of adverse effects on the initial viscosity (mechanical properties in the semi-cured (B-stage) state), curing behavior, etc., which may occur when the composition of the adhesive film is changed.

[0026] Examples of the elastomer having an epoxy group include resins having an epoxy group among the resins exemplified as component (D) described below. The elastomer having an epoxy group may include, for example, an acrylic resin having an epoxy group. The acrylic resin having an epoxy group is a polymer containing a monomer unit derived from a (meth)acrylic acid ester, and refers to a polymer containing a monomer unit derived from an epoxy-containing (meth)acrylic acid ester. The content of the structural unit derived from a (meth)acrylic acid ester in the acrylic resin having an epoxy group may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more based on the total amount of the acrylic resin. The elastomer having an epoxy group used in the synthesis of the elastomer as component (D) described below and the modified elastomer may be the same or different.

[0027] The glass transition temperature (Tg) of the elastomer having epoxy groups may be −50° C. or higher, −30° C. or higher, 0° C. or higher, or 3° C. or higher, and may be 50° C. or lower, 45° C. or lower, 40° C. or lower, 35° C. or lower, 30° C. or lower, or 25° C. or lower. In this specification, the glass transition temperature (Tg) refers to a value measured using a DSC (differential scanning calorimeter) (for example, a "Thermo Plus 2" manufactured by Rigaku Corporation). The Tg of the elastomer having epoxy groups can be adjusted to a desired range by adjusting the type and content of the structural units constituting the elastomer having epoxy groups (structural units derived from (meth)acrylic acid esters in the case of acrylic resins).

[0028] The weight average molecular weight (Mw) of the epoxy group-containing elastomer may be 100,000 or more, 200,000 or more, or 300,000 or more, and may be 3,000,000 or less, 2,000,000 or less, or 1,000,000 or less. In this specification, Mw refers to a value measured by gel permeation chromatography (GPC) and converted using a calibration curve of standard polystyrene.

[0029] Commercially available acrylic resins having an epoxy group include WS-023 EK30, SG-280 EK23, and SG-P3 (all manufactured by Nagase ChemteX Corporation), and H-CT-865 (manufactured by Resonac Corporation).

[0030] Examples of the phenolic resin include those similar to those of component (B). The phenolic resin as component (B) and the phenolic resin used in the synthesis of the modified elastomer may be the same or different.

[0031] The component (C) can be obtained, for example, by mixing or kneading an epoxy group-containing elastomer and a phenolic resin in the presence or absence of a solvent to cause a reaction.

[0032] When reacting an elastomer having an epoxy group with a phenolic resin, the mass ratio of the phenolic resin to the total of the elastomer having an epoxy group and the phenolic resin can be adjusted as desired depending on the epoxy equivalent and molecular weight of the elastomer having an epoxy group, the hydroxyl equivalent and molecular weight of the phenolic resin, etc. The mass ratio of the phenolic resin to the total of the elastomer having an epoxy group and the phenolic resin may be, for example, 1 mass% or more, 5 mass% or more, 10 mass% or more, 20 mass% or more, 30 mass% or more, 40 mass% or more, or 50 mass% or more, and may be 80 mass% or less, 70 mass% or less, 65 mass% or less, or 60 mass% or less.

[0033] The mixing or kneading can be carried out using a dispersing machine such as a general stirrer, a mortar and pestle, a triple roll mill, a ball mill, etc. Mixing or kneading may be carried out using a suitable combination of a plurality of these dispersing machines.

[0034] When mixing or kneading is carried out in the presence of a solvent, the solvent used for mixing or kneading is not limited as long as it can uniformly dissolve, knead, or disperse each component, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, and xylene. The solvent may be the same as the solvent used to prepare the composition varnish.

[0035] The mixing or kneading may be carried out under heating conditions. The heating conditions can be adjusted as desired depending on the type of epoxy group-containing elastomer, the type of phenolic resin, etc. The heating conditions may be, for example, 50 to 150°C and 1 minute to 24 hours.

[0036] The mixing or kneading may be carried out with the addition of a curing accelerator, if necessary. Examples of the curing accelerator include those similar to those described below as component (F). The content of the curing accelerator may be, for example, 0.01 to 1 mass % based on the total amount of the epoxy group-containing elastomer and the phenolic resin.

[0037] The content of component (C) may be 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, 1% by mass or more, 2% by mass or more, or 3% by mass or more, based on the total amount of the adhesive film. When the content of component (C) is 0.1% by mass or more, based on the total amount of the adhesive film, the decrease in viscosity of the adhesive film for a semiconductor due to heating tends to be further suppressed. The content of component (C) may be 20% by mass or less, 15% by mass or less, 10% by mass or less, 7% by mass or less, or 5% by mass or less, based on the total amount of the adhesive film.

[0038] Component (D): Elastomer The component (D) may be, for example, a polymer compound exhibiting a glass transition temperature (Tg) of 55° C. or less. Examples of component (D) include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, butadiene resin, and acrylonitrile resin.

[0039] The component (D) may contain an acrylic resin from the viewpoint of fluidity. Here, the acrylic resin refers to a polymer containing a monomer unit derived from a (meth)acrylic acid ester. The content of the structural unit derived from a (meth)acrylic acid ester in the acrylic resin may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more, based on the total amount of the acrylic resin. The acrylic resin may contain a monomer unit derived from a (meth)acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group. The acrylic resin may be an acrylic rubber, which is a copolymer containing a (meth)acrylic acid ester and acrylonitrile as monomer units.

[0040] The glass transition temperature (Tg) of the (D) component (e.g., acrylic resin) may be -50°C or higher, -30°C or higher, 0°C or higher, or 3°C or higher, or may be 50°C or lower, 45°C or lower, 40°C or lower, 35°C or lower, 30°C or lower, or 25°C or lower. When the (D) component has a low Tg, the adhesive film tends to have good flexibility. An adhesive film with good flexibility is easily cut together with the semiconductor wafer during dicing, thereby effectively suppressing the generation of burrs. An adhesive film with good flexibility is easily attached to the semiconductor wafer while sufficiently eliminating voids, and chipping during dicing due to reduced adhesion can also be suppressed. The Tg of the (D) component can be adjusted to a desired range by adjusting the type and content of the structural unit constituting the (D) component (in the case of an acrylic resin, a structural unit derived from a (meth)acrylic acid ester).

[0041] The weight average molecular weight (Mw) of component (D) (e.g., acrylic resin) may be 100,000 or more, 200,000 or more, or 300,000 or more, or may be 3,000,000 or less, 2,000,000 or less, or 1,000,000 or less. When the Mw of component (D) is within this range, film formability and the strength, flexibility, tackiness, etc. of the adhesive film can be appropriately controlled, and excellent reflowability and improved embeddability can be achieved.

[0042] Commercially available acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, and SG-P3 (all manufactured by Nagase ChemteX Corporation), and H-CT-865 (manufactured by Resonac Corporation).

[0043] The content of the (D) component may be 3% by mass or more, 5% by mass or more, 8% by mass or more, or 10% by mass or more, based on the total amount of the adhesive film. When the content of the (D) component is 3% by mass or more, based on the total amount of the adhesive film, the adhesive film becomes highly viscous, and improved handling of the film and suppression of bleeding can be expected. The content of the (D) component may be 40% by mass or less, 30% by mass or less, 25% by mass or less, or 20% by mass or less, based on the total amount of the adhesive film. When the content of the (D) component is 40% by mass or less, based on the total amount of the adhesive film, embeddability tends to be further improved.

[0044] The total content of the (C) component and the (D) component may be 3% by mass or more, 5% by mass or more, 8% by mass or more, or 10% by mass or more, since this can further suppress the decrease in viscosity of the adhesive film for semiconductors due to heating, and may be 40% by mass or less, 30% by mass or less, 25% by mass or less, or 20% by mass or less.

[0045] The mass ratio of the (C) component to the total of the (C) component and the (D) component may be 1 mass% or more, 5 mass% or more, 10 mass% or more, or 15 mass% or more, since this can further suppress the decrease in viscosity of the adhesive film for semiconductors due to heating, and may be 60 mass% or less, 50 mass% or less, 40 mass% or less, or 30 mass% or less.

[0046] Component (E): Inorganic Filler Examples of the component (E) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, silica, etc. Component (E) may contain silica from the viewpoint of adjusting the melt viscosity.

[0047] From the viewpoint of fluidity, the average particle size of the (E) component may be 0.01 μm (10 nm) or more, 0.03 μm (30 nm) or more, 0.05 μm (50 nm) or more, or 0.1 μm (100 nm) or more, and may be 1.5 μm (1500 nm) or less, 1.0 μm (1000 nm) or less, 0.8 μm (800 nm) or less, or 0.6 μm (600 nm) or less. Two or more (E) components with different average particle sizes may be combined. Here, the average particle size refers to the particle size at a cumulative frequency of 50% in the particle size distribution determined by laser diffraction / scattering. The average particle size of the (E) component can also be determined by using an adhesive film containing the (E) component. In this case, the adhesive film is heated to decompose the resin component, and the resulting residue is dispersed in a solvent to prepare a dispersion. The average particle size of the (E) component can be determined from the particle size distribution obtained by applying laser diffraction / scattering to the dispersion.

[0048] The content of the component (E) is 5 to 50% by mass based on the total amount of the adhesive film, and may be 10% by mass or more, 12% by mass or more, 15% by mass or more, 18% by mass or more, 20% by mass or more, or 25% by mass or more, and may be 45% by mass or less, 40% by mass or less, or 35% by mass or less.

[0049] The content of the (E) component may be 5 to 200 parts by mass relative to 100 parts by mass of the total of the (A) component and the (B) component. When the content of the (E) component is within this range, the adhesive strength of the adhesive film tends to be improved. The content of the (E) component may be 10 parts by mass or more, 20 parts by mass or more, 30 parts by mass or more, or 40 parts by mass or more, relative to 100 parts by mass of the total of the (A) component and the (B) component, and may be 150 parts by mass or less, 120 parts by mass or less, 100 parts by mass or less, or 80 parts by mass or less.

[0050] Component (F): Curing Accelerator Examples of the component (F) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, etc. Among these, from the viewpoint of reactivity, the component (F) may be imidazoles and derivatives thereof.

[0051] Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole.

[0052] Component (G): Coupling Agent Component (G) may be a silane coupling agent. Examples of the silane coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3-(2-aminoethyl)aminopropyltrimethoxysilane.

[0053] The adhesive film may further contain other components, such as pigments, ion scavengers, and antioxidants.

[0054] The total content of the (F) component, the (G) component, and other components may be 0.1 mass% or more, 0.3 mass% or more, or 0.5 mass% or more, based on the total amount of the adhesive film, and may be 30 mass% or less, 20 mass% or less, 10 mass% or less, or 5 mass% or less.

[0055] The adhesive film 10 can be formed, for example, by applying an adhesive composition containing each component to a support film. A varnish of the adhesive composition (composition varnish) may be used to form the adhesive film 10. When using a composition varnish, the components to be added are mixed or kneaded in a solvent to prepare the composition varnish, and the resulting composition varnish is applied to a support film, and the solvent is removed by heating and drying, thereby obtaining the adhesive film 10.

[0056] The support film is not particularly limited as long as it can withstand the above-mentioned heat drying. Examples of the support film include resin films such as polyester film, polyethylene film, polypropylene film, polyethylene terephthalate film, polyimide film, polyetherimide film, polyethylene naphthalate film, polymethylpentene film, and polytetrafluoroethylene film. The support film may be a multilayer film combining two or more types of films, and may have a surface treated with a silicone-based, silica-based, or other release agent. The thickness of the support film may be, for example, 10 to 200 μm or 20 to 170 μm.

[0057] The mixing or kneading can be carried out using a dispersing machine such as a general stirrer, a mortar and pestle, a triple roll mill, a ball mill, etc. Mixing or kneading may be carried out using a suitable combination of a plurality of these dispersing machines.

[0058] The solvent used in preparing the composition varnish is not limited as long as it can uniformly dissolve, knead, or disperse each component, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, as well as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, and xylene. From the viewpoints of drying speed and cost, the solvent may be methyl ethyl ketone or cyclohexanone.

[0059] The composition varnish can be applied to the support film by any known method, such as knife coating, roll coating, spray coating, gravure coating, bar coating, curtain coating, etc. The heat drying conditions are not particularly limited as long as the solvent used is sufficiently evaporated, and may be, for example, 50 to 150°C for 1 to 30 minutes.

[0060] The manufacturing method of the adhesive film 10 may include, for example, a step of reacting an elastomer having an epoxy group with a phenolic resin to obtain a modified elastomer, a step of mixing the epoxy resin, the phenolic resin, and the obtained modified elastomer to obtain an adhesive composition containing the epoxy resin, the phenolic resin, and the modified elastomer, and a step of forming an adhesive film for a semiconductor using the obtained adhesive composition.

[0061] From the viewpoint of suppressing bleeding, the viscosity of the adhesive film at 60°C may be, for example, 100 to 800 Pa s. The viscosity of the adhesive film at 60°C may be 150 Pa s or more, 200 Pa s or more, 250 Pa s or more, 300 Pa s or more, or 350 Pa s or more, and may be 750 Pa s or less, 700 Pa s or less, 650 Pa s or less, 600 Pa s or less, or 550 Pa s or less.

[0062] From the viewpoint of suppressing bleeding, the viscosity of the adhesive film at 120°C may be, for example, 60 Pa s or more, 70 Pa s or more, 80 Pa s or more, 90 Pa s or more, or 100 Pa s or more. The viscosity of the adhesive film at 120°C may be, for example, 300 Pa s or less, 250 Pa s or less, or 200 Pa s or less.

[0063] From the viewpoint of suppressing bleeding, the ratio of the viscosity at 120°C to the viscosity at 60°C (viscosity at 120°C / viscosity at 60°C) may be, for example, 0.14 or more, 0.16 or more, 0.18 or more, 0.20 or more, or 0.22 or more.

[0064] From the viewpoint of suppressing bleeding, the temperature at which the viscosity becomes 100 Pa·s or less may be, for example, 100° C. or higher, 105° C. or higher, 110° C. or higher, 115° C. or higher, or 120° C. or higher.

[0065] The viscosity of the adhesive film at 60°C and at 120°C refers to values ​​measured, for example, by the following method. A plurality of adhesive films are heated on a hot plate and laminated with a roller to form a laminate having a thickness of approximately 1 mm. A measurement sample having a circular surface with a diameter of 20 mm is punched out from the laminate. The measurement sample is attached to a circular disposable cone / plate jig with a diameter of 20 mm. The viscosity of the measurement sample is measured under the following conditions using a rheometer (for example, a HAAKE rheostress 600 (manufactured by Thermo Scientific)). From the measurement results, the values ​​at 60°C and 120°C are read, and the respective values ​​are defined as the viscosity at 60°C and the viscosity at 120°C. (Measurement conditions) Mode: strain application mode Measurement temperature: 55 to 150°C Heating rate: 10°C / min Strain: 5% Frequency: 4 Hz

[0066] The thickness of the adhesive film 10 may be, for example, 1 μm or more, 3 μm or more, 20 μm or more, 25 μm or more, 30 μm or more, 35 μm or more, 40 μm or more, 50 μm or more, 60 μm or more, 70 μm or more, or 80 μm or more, and may be 200 μm or less, 150 μm or less, 120 μm or less, 100 μm or less, 80 μm or less, or 60 μm or less. When the adhesive film 10 is an adhesive film for FOD, the thickness of the adhesive film 10 may be, for example, 40 to 200 μm, 60 to 150 μm, or 80 to 120 μm in order to properly embed the entire semiconductor chip (e.g., controller chip). When the adhesive film 10 is an adhesive film for FOW, the thickness of the adhesive film 10 may be, for example, 20 to 120 μm, 25 to 80 μm, or 30 to 60 μm, in order to embed the wires so that they do not contact the semiconductor chip.

[0067] The adhesive film 10 formed on the support film may have a cover film on the side opposite the support film to prevent damage or contamination. Examples of the cover film include polyethylene film, polypropylene film, and film treated with a release agent. The thickness of the cover film may be, for example, 15 to 200 μm or 30 to 170 μm.

[0068] The adhesive film 10 can be used, for example, as a protective sheet for protecting the back surface of a semiconductor chip of a flip-chip type semiconductor device, or as a sealing sheet for sealing the gap between the surface of the semiconductor chip of a flip-chip type semiconductor device and an adherend.

[0069] [Dicing / Die Bonding Integrated Film] Figures 2 and 3 are schematic cross-sectional views showing one embodiment of a laminate including an adhesive film. The adhesive film 10 may be supplied in the form of the laminate shown in Figure 2 or 3. The laminate 100 shown in Figure 2 includes a base layer 20 and an adhesive film 10 provided on the base layer 20. The laminate 110 shown in Figure 3 further includes a protective film 30 provided on the surface of the adhesive film 10 opposite to the base layer 20 with respect to the laminate 100.

[0070] The substrate layer 20 may be a resin film similar to the support film, and may have a thickness of, for example, 10 to 200 μm or 20 to 170 μm.

[0071] The base layer 20 may be a dicing film. A laminate in which the base layer 20 is a dicing film can be used as a dicing and die bonding integrated film. The dicing and die bonding integrated film can be said to include a dicing film and an adhesive film 10 provided on the dicing film. The dicing and die bonding integrated film may be in the form of a film, a sheet, or a tape.

[0072] Examples of dicing films include resin films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. The dicing film may be a resin film that has been surface-treated, as needed, by primer application, UV treatment, corona discharge treatment, polishing, or etching. The dicing film may also have adhesive properties. An adhesive dicing film may be, for example, a resin film to which adhesive properties have been imparted, or a laminate film having a resin film and an adhesive layer provided on one side thereof. The adhesive layer can be formed from a non-UV-curable or UV-curable adhesive. A non-UV-curable adhesive is an adhesive that exhibits a certain level of adhesiveness with short-term pressure application. A UV-curable adhesive is an adhesive whose adhesiveness decreases upon exposure to UV light. The thickness of the adhesive layer can be appropriately set depending on the shape and dimensions of the semiconductor device, but may be, for example, 1 to 100 μm, 5 to 70 μm, or 10 to 40 μm. The thickness of the base layer 20, which is a dicing film, may be 60 to 150 μm or 70 to 130 μm from the viewpoints of economy and film handling.

[0073] The protective film 30 may be a resin film similar to the cover film, and may have a thickness of, for example, 15 to 200 μm or 30 to 170 μm.

[0074] [Semiconductor Device and Manufacturing Method Thereof] Figure 4 is a schematic cross-sectional view showing one embodiment of a semiconductor device, illustrating an example of a semiconductor device manufactured using an adhesive film. The semiconductor device 200 shown in Figure 4 is mainly composed of a substrate 14, a first semiconductor chip Wa and a second semiconductor chip Waa mounted on the substrate 14, a sealing layer 42 that seals the second semiconductor chip Waa, and an adhesive film 10 that adheres the second semiconductor chip Waa to the substrate 14. The substrate 14 has an organic substrate 90 and circuit patterns 84, 94 provided on the organic substrate 90. The first semiconductor chip Wa is adhered to the substrate 14 with an adhesive 41. A first wire 88 is connected to the first semiconductor chip Wa, and the first semiconductor chip Wa is electrically connected to the circuit pattern 84 via the first wire 88. The entire first semiconductor chip Wa and the entire first wire 88 are embedded in the adhesive film 10. A second wire 98 is connected to the second semiconductor chip Waa, and the second semiconductor chip Waa is electrically connected to the circuit pattern 84 via the second wire 98. The entire second semiconductor chip Waa and the entire second wire 98 are embedded in the sealing layer 42.

[0075] 5, 6, 7, 8, and 9 are process diagrams showing one embodiment of a method for manufacturing a semiconductor device, and are process diagrams showing an example of a method for manufacturing the semiconductor device 200 shown in FIG. 5. The method shown in FIGS. 5 to 9 includes bonding a first semiconductor chip Wa to a substrate 14 via an adhesive 41, providing a first wire 88 connecting the first semiconductor chip Wa to the substrate 14 (circuit pattern 84), preparing an adhesive-attached chip having a second semiconductor chip Waa and an adhesive film 10 attached thereto, pressing the adhesive-attached chip to the substrate 14, thereby adhering the second semiconductor chip Waa to the substrate 14 so that the first semiconductor chip Wa and the first wire 88 are embedded by the adhesive film 10, and providing a second wire 98 connecting the second semiconductor chip Waa to the substrate 14 (circuit pattern 84). Thereafter, by forming a sealing layer 42, the semiconductor device 200 shown in FIG. 4 can be obtained.

[0076] The thickness of the first semiconductor chip Wa may be 10 to 170 μm. The first semiconductor chip Wa may be a controller chip for driving the semiconductor device 200. The first semiconductor chip Wa may be a flip-chip type chip. The size of the first semiconductor chip Wa is usually equal to or smaller than the size of the second semiconductor chip Waa. The adhesive 41 interposed between the first semiconductor chip Wa and the substrate 14 may be a known semiconductor adhesive used in the relevant field.

[0077] 5, the substrate 14 (circuit pattern 84) and the first semiconductor chip Wa are electrically connected via a first wire 88. The first wire 88 connecting the first semiconductor chip Wa and the substrate 14 (circuit pattern 84) may be, for example, a gold wire, an aluminum wire, or a copper wire. The heating temperature for connecting the first wire 88 may be within a range of 80 to 250°C or 80 to 220°C. The heating time for connecting the first wire 88 may be several seconds to several minutes. To connect the first wire 88, ultrasonic vibration energy and compression energy due to applied pressure may be applied.

[0078] An adhesive-attached chip consisting of a second semiconductor chip Waa and an adhesive film 10 can be prepared, for example, using a dicing / die-bonding integrated film having a configuration similar to the laminate 100 shown in FIG. 2 . In this case, for example, the laminate 100 (dicing / die-bonding integrated film) is attached to one side of a semiconductor wafer with the adhesive film 10 facing the semiconductor wafer. The surface to which the adhesive film 10 is attached may be the circuit side of the semiconductor wafer or the opposite backside. The semiconductor wafer to which the laminate 100 (dicing / die-bonding integrated film) is attached is diced to form individual second semiconductor chips Waa. Examples of dicing include blade dicing using a rotary blade and stealth dicing, which creates modified regions in the semiconductor wafer using a laser and expands the base layer. The second semiconductor chip Waa is picked up together with the separated adhesive film 10. If the adhesive layer of the dicing film is made of an ultraviolet-curing adhesive, the adhesive strength of the adhesive layer may be reduced, if necessary, by irradiating the adhesive layer with ultraviolet light before picking up the second semiconductor chip Waa.

[0079] The second semiconductor chip Waa may have a width of 20 mm or less. The width (or the length of one side) of the second semiconductor chip Waa may be 3 to 15 mm or 5 to 10 mm.

[0080] The semiconductor wafer used to form the second semiconductor chip Waa may be a thin semiconductor wafer having a thickness of, for example, 10 to 100 μm. The semiconductor wafer may be a wafer of single crystal silicon, polycrystalline silicon, various ceramics, or compound semiconductors such as gallium arsenide. The second semiconductor chip Waa may also be formed from a similar semiconductor wafer.

[0081] As shown in FIG. 7 , an adhesive-attached chip consisting of an adhesive film 10 and a second semiconductor chip Waa is placed so that the first wire 88 and the first semiconductor chip Waa are covered by the adhesive film 10. Next, as shown in FIG. 8 , the second semiconductor chip Waa is pressure-bonded to the substrate 14, thereby fixing the second semiconductor chip Waa to the substrate 14. The heating temperature for pressure-bonding may be 50 to 200°C or 100 to 150°C. A higher heating temperature for pressure-bonding tends to soften the adhesive film 10, thereby improving embeddability. The pressure-bonding time may be 0.5 to 20 seconds or 1 to 5 seconds. The pressure for pressure-bonding may be 0.01 to 5 MPa or 0.02 to 2 MPa.

[0082] After the pressure bonding, the structure including the adhesive film 10 may be further heated to cure the adhesive film 10. The temperature and time for curing can be appropriately set depending on the curing temperature of the adhesive film 10, etc. The temperature may be changed in stages. The heating temperature may be, for example, 40 to 300°C or 60 to 200°C. The heating time may be, for example, 30 to 300 minutes.

[0083] 9, the substrate 14 and the second semiconductor chip Waa are electrically connected via second wires 98. The type and connection method of the second wires 98 may be the same as those of the first wires 88.

[0084] Thereafter, the sealing layer 42 that seals the circuit pattern 84, the second wire 98, and the second semiconductor chip Waa is formed from a sealing material. The sealing layer 42 can be formed, for example, by a conventional method using a mold. After the sealing layer 42 is formed, the adhesive film 10 and the sealing layer 42 may be further thermally cured by heating. The heating temperature for this purpose may be, for example, 165 to 185°C, and the heating time may be approximately 0.5 to 8 hours.

[0085] FIG. 10 is a schematic cross-sectional view showing another embodiment of a semiconductor device. The semiconductor device 201 is mainly composed of a substrate 14, a first semiconductor chip Wa and a second semiconductor chip Waa mounted on the substrate 14, a sealing layer 42 that seals the first semiconductor chip Wa and the second semiconductor chip Waa, and an adhesive film 10 that adheres the second semiconductor chip Waa to the first semiconductor chip Wa. The substrate 14 has an organic substrate 90, circuit patterns 84 and 94 provided on the organic substrate 90, and a connection terminal 95 provided on the surface of the organic substrate 90 opposite the circuit patterns 84 and 94. The first semiconductor chip Wa is adhered to the substrate 14 with an adhesive 41. A first wire 88 is connected to the first semiconductor chip Wa, and the first semiconductor chip Wa is electrically connected to the circuit pattern 84 via the first wire 88. A portion of the first wire 88 is embedded in the adhesive film 10. Second wires 98 are connected to the second semiconductor chip Waa, and the second semiconductor chip Waa is electrically connected to the circuit pattern 84 via the second wires 98 .

[0086] The semiconductor device 201 shown in FIG. 10 can be manufactured by a method similar to that of the semiconductor device 200, which includes bonding a second semiconductor chip Waa to a first semiconductor chip Wa with an adhesive film 10.

[0087] 11 is a schematic cross-sectional view showing another embodiment of a semiconductor device. The semiconductor device 202 is mainly composed of a substrate 14 (organic substrate 90), a first semiconductor chip Wa and a second semiconductor chip Waa mounted on the substrate 14, a sealing layer 42 that seals the first semiconductor chip Wa and the second semiconductor chip Waa, and an adhesive film 10 that adheres the second semiconductor chip Waa to the substrate 14 while embedding the entire first semiconductor chip Wa. The first semiconductor chip Wa is a flip-chip type chip and is electrically connected to the substrate 14 via multiple electrodes 96. An underfill 50 is filled between the first semiconductor chip Wa and the substrate 14.

[0088] The present disclosure will be specifically described below based on examples, but the present disclosure is not limited to these examples.

[0089] Synthesis Examples 1 to 3 [Synthesis and Properties of Modified Elastomers] <Synthesis of Modified Elastomers> A cyclohexanone solution containing a modified elastomer was obtained by stirring an epoxy group-containing elastomer, a phenolic resin, a curing accelerator, and a solvent (cyclohexanone, etc.) in the composition ratios (unit: parts by mass) shown in Table 1 under the reaction conditions shown in Table 1. The numerical values ​​for each component shown in Table 1 refer to parts by mass of the solid content.

[0090] ・Epoxy group-containing elastomer SG-P3 solvent-change product (trade name, manufactured by Nagase ChemteX Corporation, acrylic resin, weight-average molecular weight: 800,000, Tg: 12°C) ・Phenol resin MEH-7800M (trade name, manufactured by Meiwa Kasei Co., Ltd. (now UBE Corporation), phenylaralkyl phenolic resin, hydroxyl group equivalent: 174 g / eq, softening point: 80°C) ・Curing accelerator 2PZ-CN (trade name, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole)

[0091] <Physical Properties of Modified Elastomer> (Measurement of Concentration After Reaction) A predetermined amount of cyclohexanone solution containing the modified elastomer was weighed and heated at 160°C for 1 hour. Based on the amount of nonvolatile matter after heating, the concentration of the cyclohexanone solution containing the modified elastomer was determined. The results are shown in Table 1.

[0092] (Viscosity Measurement) The viscosity at 25°C was measured using the following device and conditions. The results are shown in Table 1. Device: E-type viscometer (RE-85R, manufactured by Toki Sangyo Co., Ltd.), rotor No. 4, rotation speed: 10 rpm Preheat: 2 minutes Measurement time: 3 minutes

[0093]

[0094] Examples 1 and 2 and Comparative Example 1 [Production and Evaluation of Adhesive Film] <Preparation of Composition Varnish> The composition varnishes of Examples 1 and 2 and Comparative Example 1 were prepared by stirring components (A) to (G) and a solvent (cyclohexanone, etc.) in the composition ratios (unit: parts by mass) shown in Table 2 until each component was homogeneous. The numerical values ​​for each component shown in Table 2 refer to parts by mass of the solid content.

[0095] Component (A): Epoxy resin (A-1) N-500P (trade name, manufactured by DIC Corporation, o-cresol novolac epoxy resin, epoxy equivalent: 204 g / eq, softening point: 75 to 85°C) (A-2) EXA-830CRP (trade name, manufactured by DIC Corporation, liquid bisphenol F epoxy resin, epoxy equivalent: 159 g / eq) Component (B): Phenolic resin (B-1) MEH-7800M (trade name, manufactured by Meiwa Kasei Co., Ltd. (now UBE Corporation), phenylaralkyl phenolic resin, hydroxyl group equivalent: 174 g / eq, softening point: 80°C) Component (C): Modified elastomer (C-1) Modified elastomer of Synthesis Example 1 Component (D): Elastomer (D-1) SG-P3 solvent-change product (trade name, manufactured by Nagase ChemteX Corporation, acrylic resin, weight-average molecular weight: 800,000, Tg: 12°C) (E) component: inorganic filler (E-1) SC2050-HLG (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size: 0.50 μm) (F) component: curing accelerator (F-1) 2PZ-CN (trade name, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole) (G) component: coupling agent (G-1) A-189 (trade name, manufactured by Momentive Performance Materials Japan, LLC, γ-mercaptopropyltrimethoxysilane) (G-2) Z-6119 (trade name, manufactured by Dow Toray Industries, Inc., 3-ureidopropyltriethoxysilane)

[0096] <Preparation of Adhesive Films> The composition varnishes of Examples 1 and 2 and Comparative Example 1 were filtered through a 100-mesh filter and vacuum degassed. A 38 μm-thick polyethylene terephthalate (PET) film that had been subjected to a release treatment was prepared as a substrate layer, and the composition varnish after vacuum degassing was applied to the PET film. The applied composition varnish was heated and dried in two stages, at 90°C for 5 minutes and then at 140°C for 5 minutes, to obtain adhesive films of Examples 1 and 2 and Comparative Example 1 in a B-stage state. The thickness of the adhesive film was adjusted to 60 μm depending on the amount of composition varnish applied. Two of the resulting 60 μm-thick adhesive films were prepared and bonded together at 70°C to produce an adhesive film with a thickness of 120 μm.

[0097] <Evaluation of Adhesive Films> (Measurement of Viscosity Change) Viscosity change was measured using the adhesive films of Examples 1 and 2 and Comparative Example 1. Multiple adhesive films were heated on a hot plate and laminated with a roller to form a laminate with a thickness of approximately 1 mm. A measurement sample with a circular surface having a diameter of 20 mm was punched out from the laminate. The measurement sample was attached to a circular disposable cone / plate jig having a diameter of 20 mm. The viscosity of the measurement sample was measured using a HAAKE rheostress 600 (manufactured by Thermo Scientific) under the following conditions. From the measurement results, values ​​at 60°C and 120°C were read, and the respective values ​​were defined as the viscosity at 60°C and the viscosity at 120°C. The results are shown in Table 2. Measurement conditions: Mode: strain application mode; Measurement temperature: 55 to 150°C; Heating rate: 10°C / min; Strain: 5%; Frequency: 4 Hz

[0098]

[0099] Fig. 12 is a graph showing the viscosity changes of the adhesive films of Examples 1 and 2 and Comparative Example 1. As shown in Fig. 12 and Table 2, the adhesive films of Examples 1 and 2 had a higher temperature at which they reached a predetermined viscosity (100 Pa s) or less, and also had a larger ratio of the viscosity at 120°C to the viscosity at 60°C (viscosity at 120°C / viscosity at 60°C) than the adhesive film of Comparative Example 1, and the viscosity decrease was suppressed. These results confirmed that the adhesive film for a semiconductor of the present disclosure can suppress the decrease in viscosity due to heating without significantly changing the types and amounts of raw materials.

[0100] 10...adhesive film (semiconductor adhesive film), 14...substrate, 20...base material layer (dicing film), 30...protective film, 41...adhesive, 42...sealing layer, 50...underfill, 84, 94...circuit pattern, 88...first wire, 90...organic substrate, 98...second wire, 95...connection terminal, 96...electrode, 100, 110...laminated body, 200, 201, 202...semiconductor device, Wa...first semiconductor chip, Waa...second semiconductor chip.

Claims

1. An adhesive film for semiconductors, comprising an epoxy resin, a phenolic resin, and a modified elastomer, wherein the modified elastomer is a reaction product of an elastomer having an epoxy group and the phenolic resin.

2. The adhesive film for a semiconductor according to claim 1, further comprising an elastomer.

3. The adhesive film for a semiconductor according to claim 2, further comprising an inorganic filler.

4. The adhesive film for semiconductors according to any one of claims 1 to 3, which is used to adhere a semiconductor chip to a substrate while embedding another semiconductor chip therein.

5. An adhesive film for semiconductors according to any one of claims 1 to 3, which is used to adhere a semiconductor chip to another semiconductor chip while partially or entirely embedding wires connected to the other semiconductor chip.

6. A method for producing an adhesive film for semiconductors, comprising the steps of: reacting an elastomer having an epoxy group with a phenolic resin to obtain a modified elastomer; mixing the epoxy resin, the phenolic resin, and the obtained modified elastomer to obtain an adhesive composition containing the epoxy resin, the phenolic resin, and the modified elastomer; and forming an adhesive film for semiconductors using the obtained adhesive composition.

7. A dicing and die bonding integrated film comprising: a dicing film; and an adhesive film for a semiconductor according to any one of claims 1 to 3 provided on the dicing film.

8. A method for manufacturing a semiconductor device, comprising a step of adhering a second semiconductor chip to a substrate on which a first semiconductor chip is mounted using an adhesive film for semiconductors according to any one of claims 1 to 3, wherein the first semiconductor chip is embedded in the adhesive film for semiconductors.

9. A method for manufacturing a semiconductor device, comprising the step of adhering a second semiconductor chip to a first semiconductor chip with an adhesive film for semiconductors according to any one of claims 1 to 3, wherein a wire is connected to the first semiconductor chip, and the wire is partially or entirely embedded in the adhesive film for semiconductors.

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