Optical sensor package and manufacturing method therefor

Abstract

A method for manufacturing an optical sensor package, according to an embodiment of the present invention, comprises the steps of: forming a partition wall on each of substrate units on a substrate strip; mounting sensor elements such as a light-emitting unit and a light-receiving unit on each of the substrate units; and forming a molding member on each of the substrate units by using an encapsulant, wherein the partition wall is disposed between the light-emitting unit and the light-receiving unit.

Description

Optical sensor package and manufacturing method thereof

[0001] The present invention relates to an optical sensor package and a method for manufacturing the same.

[0002] Semiconductor packages come in a variety of types, depending on the technical requirements of each application. Recently, semiconductor packages are increasingly being designed for lightness, compactness, low electrical power consumption, stable and fast signal wiring design, and technologies that prevent the inflow of external contaminants.

[0003] For example, in the field of electronic cigarettes, which electrically heat an aerosol-generating device containing nicotine to produce vapor, an optical sensor may be required to identify whether an aerosol-generating device (e.g., a cigarette) has been inserted into the aerosol-generating device. Such an optical sensor must be mounted on a compact electronic device and, to prevent the ingress of various contaminants that may be generated after smoking, may be manufactured in the form of an optical sensor package.

[0004] Meanwhile, a light sensor detects the proximity of a subject by detecting the light emitted from a light-emitting element, such as an ultraviolet and / or infrared light-emitting element, which is reflected back to the subject and returned to the light-receiving element. Therefore, if a crosstalk phenomenon occurs in which light emitted from the light-emitting element is directly detected by the light-receiving element, the light sensor may experience a problem in which the sensing sensitivity deteriorates.

[0005] Through the present disclosure, an optical sensor package can be provided that can prevent light emitted from a light emitting portion from being directly incident on a light receiving portion.

[0006] In addition, through the present disclosure, an optical sensor package with improved process yield can be provided by minimizing the occurrence of warpage during the package manufacturing stage.

[0007] The problems to be solved through the examples are not limited to the problems described above, and problems not mentioned can be clearly understood by a person having ordinary skill in the technical field to which the examples belong from this specification and the attached drawings.

[0008] A method for manufacturing an optical sensor package according to one embodiment of the present invention includes the steps of forming a partition wall on each of substrate units on a substrate strip, mounting sensor elements such as a light emitting unit and a light receiving unit on each of the substrate units, and forming a molding member using a sealant on each of the substrate units, wherein the partition wall is disposed between the light emitting unit and the light receiving unit.

[0009] The step of mounting the sensor elements further includes the step of mounting a semiconductor chip on the substrate units, and the light receiving unit can be placed on at least one of the semiconductor chip and the substrate unit opposite the light emitting unit with respect to the semiconductor chip.

[0010] The height from the upper surface of the substrate strip to the upper surface of the semiconductor chip may be higher than the height from the upper surface of the substrate strip to the upper surface of the light-emitting portion.

[0011] The step of forming the above bulkhead may be characterized by transfer molding using a black epoxy molding compound.

[0012] The step of forming the above molding member may be characterized by performing transfer molding using a transparent molding compound as the sealing agent.

[0013] The above transfer molding may be characterized as a reverse molding including a step of turning over the substrate strip and mounting and fixing the substrate units so that the cavities provided in the mold face each other, and a step of providing the black epoxy molding compound or the transparent molding compound to the cavities.

[0014] The above substrate strip may further include a singulation step of cutting the above substrate strip into substrate unit units.

[0015] A method for manufacturing an optical sensor package according to one embodiment of the present invention includes the steps of forming a partition wall on each of substrate units on a substrate strip, mounting sensor elements such as a light-emitting unit and a light-receiving unit on each of the substrate units, and forming a molding member using a sealant on each of the substrate units, wherein the partition wall is disposed along a first partition wall portion disposed between the light-emitting unit and the light-receiving unit and the edges of the substrate units.

[0016] The step of mounting the sensor elements further includes the step of mounting a semiconductor chip on the substrate units, and the light receiving unit can be placed on at least one of the semiconductor chip and the substrate unit opposite the light emitting unit with respect to the semiconductor chip.

[0017] The height from the upper surface of the substrate strip to the upper surface of the semiconductor chip may be higher than the height from the upper surface of the substrate strip to the upper surface of the light-emitting portion.

[0018] The step of forming the above bulkhead can be performed by transfer molding using a black epoxy molding compound.

[0019] The above transfer molding may be characterized as a molding including a step of placing a mold on the substrate strip, mounting and fixing the mold so that the cavities provided in the mold and the substrate units face each other, and a step of providing the black epoxy molding compound to the cavity.

[0020] The above cavity may be formed so that the inner surface of the partition wall has an inclined surface that forms an obtuse angle with the upper surface of the substrate strip.

[0021] The step of forming the molding member may be characterized by dispensing molding by using a transparent molding compound as the sealing agent and injecting the sealing agent into a first region including the light-emitting portion surrounded by the partition wall and a second region including the light-receiving portion surrounded by the partition wall.

[0022] A polishing step for smoothly processing the upper surface of the above bulkhead and the upper surface of the above molding part may be further included.

[0023] The step of cutting the substrate strip into substrate unit units may be further included.

[0024] An optical sensor package according to one embodiment of the present invention comprises: a package substrate; a light emitting portion disposed on the package substrate, which emits light of a first wavelength; a light receiving portion, which receives light of the second wavelength and is excited to light of the second wavelength when the light of the first wavelength is reflected by an identification material; and a semiconductor chip disposed on the package substrate, wherein the light receiving portion is disposed on at least one of the semiconductor chip and the package substrate opposite the light emitting portion based on the semiconductor chip, and a height from an upper surface of the package substrate to an upper surface of the semiconductor chip is higher than a height from an upper surface of the package substrate to an upper surface of the light emitting portion.

[0025] The light-emitting unit may include an ultraviolet light-emitting diode and an infrared light-emitting diode, and the light-receiving unit may include an RGB optical diode disposed on the semiconductor chip, and an infrared optical diode disposed on the package substrate opposite the light-emitting unit with respect to the semiconductor chip.

[0026] The light-emitting unit may include a plurality of ultraviolet light-emitting diodes, and the light-receiving unit may include an RGB optical diode arranged on the semiconductor chip, and an infrared optical diode arranged on the package substrate opposite the light-emitting unit with respect to the semiconductor chip.

[0027] The light-emitting unit may include an ultraviolet light-emitting diode and an infrared light-emitting diode, and the light-receiving unit may include an RGB optical diode and an infrared optical diode arranged on the semiconductor chip.

[0028] The light emitting unit may include a plurality of ultraviolet light emitting diodes, and the light receiving unit may include an RGB optical diode arranged on the semiconductor chip.

[0029] The light emitting unit may include a plurality of ultraviolet light emitting diodes, and the light receiving unit may include an infrared optical diode arranged on the semiconductor chip.

[0030] The light-emitting unit may include an ultraviolet light-emitting diode and an infrared light-emitting diode, and the light-receiving unit may include an infrared optical diode arranged on the package substrate opposite the light-emitting unit with respect to the semiconductor chip.

[0031] The upper surface of the exposed package substrate portion, the light emitting portion, the light receiving portion, and the molding member disposed on the semiconductor chip may be further included.

[0032] The above molding member can be formed from a transparent molding compound.

[0033] It may further include a partition wall disposed on the package substrate between the light emitting portion and the semiconductor chip.

[0034] The upper surface of the exposed package substrate portion, the light emitting portion, the light receiving portion, and the molding member disposed on the semiconductor chip may be further included.

[0035] The above bulkhead may be formed of a black epoxy molding compound, and the above molding member may be formed of a transparent molding compound.

[0036] The upper surface of the partition wall may be positioned on a plane with respect to the upper surface of the molding member, and the remaining side surfaces of the partition wall, excluding the side surfaces facing the light-emitting portion, the light-receiving portion, and the semiconductor chip, and the side surfaces of the molding member may be positioned on a plane with respect to each other.

[0037] The above identification material may include a lanthanide material.

[0038] The package substrate may further include a first partition wall portion disposed between the light-emitting portion and the semiconductor chip, and a second partition wall portion disposed along the periphery of the package substrate.

[0039] It may include a first molding part disposed on the upper surface of one portion of the exposed package substrate and the light-emitting part, and a second molding part disposed on the upper surface of another portion of the exposed package substrate and the light-receiving part and the semiconductor chip.

[0040] The inner surface of the partition wall in contact with the first molding portion may have an inclined surface forming an obtuse angle with the upper surface of the package substrate.

[0041] A reflective material may be placed on the inclined surface.

[0042] The above bulkhead may be formed of a black epoxy molding compound, and the above molding member may be formed of a transparent molding compound.

[0043] The optical sensor package according to embodiments of the present invention can be expected to improve the sensing sensitivity of the optical sensor package by preventing the crosstalk phenomenon in which light emitted from a light emitting portion is directly incident on a light receiving portion.

[0044] The method for manufacturing an optical sensor package according to embodiments of the present invention can improve process yield by minimizing the occurrence of warpage in the package manufacturing step.

[0045] The effects of the embodiments are not limited to the effects described above, and effects not mentioned can be clearly understood by a person having ordinary skill in the art to which the embodiments belong from this specification and the attached drawings.

[0046] FIG. 1a is a plan view of an optical sensor package according to one embodiment, and FIG. 1b is a cross-sectional view of the optical sensor package taken along line I-I' of FIG. 1a.

[0047] FIG. 1c is a drawing for explaining the sensing operation of an optical sensor package according to one embodiment.

[0048] FIG. 2a is a plan view of an optical sensor package according to one embodiment, and FIG. 2b is a cross-sectional view of the optical sensor package taken along line II-II' of FIG. 2a.

[0049] FIG. 3a is a plan view of an optical sensor package according to one embodiment, and FIG. 3b is a cross-sectional view of the optical sensor package taken along line III-III' of FIG. 3a.

[0050] FIG. 4a is a plan view of an optical sensor package according to one embodiment, and FIG. 4b is a cross-sectional view of the optical sensor package taken along line IV-IV' of FIG. 4a.

[0051] FIG. 5a is a plan view of an optical sensor package according to one embodiment, and FIG. 5b is a cross-sectional view of the optical sensor package taken along line V-V' of FIG. 5a.

[0052] FIG. 6a is a plan view of an optical sensor package according to one embodiment, and FIG. 6b is a cross-sectional view of the optical sensor package taken along line VI-VI' of FIG. 6a.

[0053] FIG. 7a is a plan view of an optical sensor package according to one embodiment, and FIG. 7b is a cross-sectional view of the optical sensor package taken along line VII-VII' of FIG. 7a.

[0054] FIG. 8A is a plan view of an optical sensor package according to one embodiment.

[0055] Fig. 8b is a cross-sectional view of the optical sensor package taken along line VIII-VIII' of Fig. 8a.

[0056] FIG. 9a is a plan view of an optical sensor package according to one embodiment.

[0057] Fig. 9b is a cross-sectional view of the optical sensor package taken along line IX-IX' of Fig. 9a.

[0058] FIG. 10A is an external perspective view showing a substrate strip for an optical sensor package according to one embodiment of the present invention.

[0059] Figure 10b is a cross-sectional view of the substrate strip cut along the line X-X' of the substrate strip of Figure 10a.

[0060] Figures 11 to 17 are cross-sectional views showing the manufacturing process of the substrate strip for the optical sensor package of Figures 10a and 10b step by step.

[0061] Fig. 18 is a flowchart for explaining a method for manufacturing an optical sensor package according to one embodiment of the present invention.

[0062] FIG. 19 is a cross-sectional view of a substrate strip for an optical sensor package according to another embodiment of the present invention.

[0063] Figures 20 to 26 are cross-sectional views showing the manufacturing process of the substrate strip for the optical sensor package of Figure 19 step by step.

[0064] FIG. 27 is a flowchart illustrating a method for manufacturing an optical sensor package according to another embodiment of the present invention.

[0065] The terms used in the examples have been selected from widely used, current terms, taking into account the functions of the present invention. However, these terms may vary depending on the intentions of those skilled in the art, precedents, the emergence of new technologies, etc. Furthermore, in certain cases, terms may be arbitrarily selected by the applicant, in which case their meanings will be described in detail in the relevant description of the invention. Therefore, the terms used in the present invention should be defined based on their meaning and the overall content of the present invention, rather than simply their names.

[0066] When a part of the specification is said to "include" a component, this does not exclude other components, but rather implies the inclusion of other components, unless otherwise specifically stated. Furthermore, terms such as "part" and "module" used in the specification mean a unit that processes at least one function or operation, which may be implemented in hardware, software, or a combination of hardware and software.

[0067] Below, with reference to the attached drawings, embodiments of the present invention are described in detail so that those skilled in the art can easily implement them. However, the present invention may be implemented in various different forms and is not limited to the embodiments described herein.

[0068] Hereinafter, embodiments are described in detail with reference to the drawings.

[0069] FIG. 1A is a plan view of an optical sensor package according to one embodiment, and FIG. 1B is a cross-sectional view of the optical sensor package taken along line I-I' of FIG. 1A. FIG. 1C is a drawing for explaining a sensing operation of the optical sensor package according to one embodiment.

[0070] Referring to FIGS. 1A to 1C, an optical sensor package (100) according to one embodiment may include a package substrate (SUB), a light emitting portion (110), a semiconductor chip (120), a light receiving portion (130), and a molding member (ENC).

[0071] In one embodiment, a package substrate (SUB) may have a first element (PE1) and a second element (PE2) formed on a first surface (S1) (e.g., a surface in the +Z direction), and a substrate terminal (TE) formed on a second surface (S2) opposite to the first surface (S1) (e.g., a surface in the -Z direction).

[0072] In one embodiment, the first surface (S1) may be a surface facing the detection target (OBJ) of the optical sensor package (100). The substrate terminal (TE) may be electrically and / or physically connected to an electronic device (e.g., an aerosol generating device, a mobile phone, a laptop, etc.) on which the optical sensor package (100) of the present invention is mounted. At this time, an identification material (DM) may be included on one surface of the detection target (OBJ).

[0073] The identification material (DM) can be excited by absorbing light of a predetermined wavelength range, and in this case, 'the material being excited' can mean that the state of the material changes from a ground state to an excited state. Thereafter, during the process of the state of the identification material (DM) changing from an excited state to a ground state, light of a predetermined wavelength range can be emitted from the luminescent material.

[0074] In one embodiment, the identification material (DM) can be excited by light irradiated by the light emitting unit (110) and can emit light of a wavelength range different from the wavelength range of the irradiated light. For example, the identification material (DM) can be excited by light of a first wavelength range irradiated from the light emitting unit (110) and can emit light of a second wavelength range different from the first wavelength range.

[0075] At this time, the identification material (DM) may be a material included in the lanthanide series and may include a material composed of at least one element from atomic numbers 57 to 71.

[0076] For example, the identification material (DM) may be a first light-emitting material that emits light in a second wavelength range of about 400 nm to about 750 nm when excited by light in a first wavelength range of about 350 nm to about 390 nm. Accordingly, the light-emitting unit (110) may irradiate ultraviolet light of about 365 nm to the first light-emitting material, and the light-receiving unit (130) may sense visible light of 700 nm (i.e., red light) emitted from the first light-emitting material.

[0077] In one embodiment, the light emitting unit (110) may be comprised of at least one light emitting diode that emits light (L) of a first wavelength when current flows through it. For example, both light emitting units (110) illustrated in FIGS. 1A to 1C may be ultraviolet light emitting diodes.

[0078] In one embodiment, the semiconductor chip (120) may be formed of an application specific integrated circuit (ASIC) that controls the overall operation of the optical sensor package (100).

[0079] In one embodiment, the light receiving unit (130) may be formed of at least one light receiving diode that allows current to flow when receiving light (L') of a second wavelength that is different from light (L) of a first wavelength. For example, the light receiving unit (130) illustrated in FIGS. 1A to 1C may be an RGB detection sensor. The RGB detection sensor may include a first photodiode (131) for detecting red light, a second photodiode (132) for detecting green light, and a third photodiode (133) for detecting blue light. The RGB detection sensor may detect the color of the light (L') of the second wavelength based on a ratio of the amount of light received by each of the first photodiode (131), the second photodiode (132), and the third photodiode (133).

[0080] In one embodiment, the optical sensor package (100) may include a first element (PE1), a second element (PE2), and a first conductive member (W1).

[0081] In one embodiment, a first element (PE1) and a second element (PE2) may be formed on a first surface (S1). The first element (PE1) may be connected to a light-emitting unit (110) formed of a light-emitting diode, and the second element (PE2) may be connected to a semiconductor chip (120).

[0082] In one embodiment, the first conductive member (W1) can electrically connect the first element (PE1) and the light-emitting unit (110). For example, the first element (PE1) can be composed of two terminals including a negative terminal and a positive terminal. The light-emitting unit (110) can be directly coupled to either of the two terminals. The first conductive member (W1) can connect the light-emitting unit (110) to the other of the two terminals.

[0083] In addition, the solder ball (SD) can electrically connect the second element (PE2) and the semiconductor chip (120). For example, the second element (PE2) can be configured with a plurality of terminals corresponding to pad electrodes formed on the back surface of the semiconductor chip (120). The semiconductor chip (120) can be connected to the second element (PE2) by placing the solder ball (SD) between the pad electrodes of the semiconductor chip (120) and the plurality of electrodes of the second element (PE2) and performing a reflow process.

[0084] In one embodiment, the first element (PE1) and the second element (PE2) may be arranged adjacent to each other on the first surface (S1). Accordingly, the light emitting unit (110) and the semiconductor chip (120) may be arranged adjacent to each other on the first surface (S1) of the package substrate (SUB).

[0085] In one embodiment, the light receiving unit (130) may be placed on the semiconductor chip (120). For example, the light receiving unit (130) may be manufactured integrally during the production of the semiconductor chip (120). In FIG. 1A, an embodiment is illustrated in which the light receiving unit (130) is placed on the upper left side of the semiconductor chip (120) and the area of ​​the light receiving unit (130) occupies approximately 1 / 4 of the semiconductor chip (120), but this is merely exemplary and is not limited thereto. That is, the size and arrangement position of the light receiving unit (130) may be variously modified at the request of the customer.

[0086] According to one embodiment, the height (H1) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the semiconductor chip (120) may be higher than the height (H2) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the light-emitting portion (110). For example, the height (H1) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the semiconductor chip (120) may be about 610 μm, and the height (H2) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the light-emitting portion (110) may be about 150 μm.

[0087] In this way, when the height (H1) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the semiconductor chip (120) is higher than the height (H2) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the light emitting unit (110), the light receiving unit (130) is disposed on the semiconductor chip (120), so that the light (L) emitted from the light emitting unit (110) can be prevented from being directly incident on the light receiving unit (130) without passing through the detection target (OBJ). That is, the semiconductor chip (120) can perform a barrier function in that it blocks the light emitted from the light emitting unit (110).

[0088] Due to this, the optical sensor package (100) of the present invention can be expected to improve the sensing sensitivity of the optical sensor package (100) by preventing the crosstalk phenomenon in which light (L) emitted from the light emitting portion (110) is directly incident on the light receiving portion (130).

[0089] In one embodiment, a molding member (ENC) may be disposed on a first surface (S1) of a package substrate (SUB). The molding member (ENC) may protect the first surface (S1) of the package substrate (SUB) and other components mounted on the first surface (S1), such as a light-emitting unit (110), a semiconductor chip (120), and a light-receiving unit (130). The molding member (ENC) may be made of a non-conductive material. The molding member (ENC) may reduce or prevent electrical short-circuiting or unnecessary short-circuiting of the first surface (S1) of the package substrate (SUB) and other components mounted on the first surface (S1).

[0090] In one embodiment, the molding member (ENC) may be formed to surround the light emitting portion (110), the semiconductor chip (120), and the light receiving portion (130) on the first surface (S1) of the package substrate (SUB).

[0091] In one embodiment, the molding member (ENC) may be formed of a light-transmitting material. For example, the molding member (ENC) may be a transparent molding compound (CMC). The molding member (ENC) may guide light emitted from the light-emitting unit (110) to be transmitted to the detection target (OBJ) of the optical sensor package (100).

[0092] In one embodiment, the molding member (ENC) may be formed into a single body by connecting the regions surrounding the light emitting portion (110), the semiconductor chip (120), and the light receiving portion (130), respectively. The molding member (ENC) may be applied substantially uniformly on the first surface (S1) of the package substrate (SUB) and cured. The molding member (ENC) formed into a single body may improve the efficiency of manufacturing the optical sensor package (100).

[0093] FIG. 2a is a plan view of an optical sensor package according to one embodiment, and FIG. 2b is a cross-sectional view of the optical sensor package taken along line II-II' of FIG. 2a.

[0094] The optical sensor package (100) illustrated in FIGS. 2A and 2B differs from the optical sensor package (100) illustrated in FIGS. 1A to 1C, which includes only an ultraviolet light emitting diode and an RGB detection sensor, in that it further includes an infrared light emitting diode and an infrared photodetector, but the remaining configurations are substantially the same. Hereinafter, configurations with differences will be described, and redundant descriptions of identical configurations will be omitted.

[0095] Referring to FIGS. 2A and 2B, an optical sensor package (100) according to one embodiment may include a package substrate (SUB), a light emitting portion (110, 110_1), a semiconductor chip (120), a light receiving portion (130_1), and a molding member (ENC).

[0096] One side of the detection target (OBJ) may include an identification material (DM).

[0097] The identification material (DM) can be excited by absorbing light of a predetermined wavelength range, and in this case, 'the material being excited' can mean that the state of the material changes from a ground state to an excited state. Thereafter, during the process of the state of the identification material (DM) changing from an excited state to a ground state, light of a predetermined wavelength range can be emitted from the luminescent material.

[0098] In one embodiment, the identification material (DM) can be excited by light irradiated by the light emitting unit (110) and can emit light of a wavelength range different from the wavelength range of the irradiated light. For example, the identification material (DM) can be excited by light of a first wavelength range irradiated from the light emitting unit (110) and can emit light of a second wavelength range different from the first wavelength range.

[0099] For example, the identification material (DM) may be a first light-emitting material that emits light in a second wavelength range of about 400 nm to about 750 nm when excited by light in a first wavelength range of about 350 nm to about 390 nm. Accordingly, the light-emitting unit (110) may irradiate ultraviolet light of about 365 nm to the first light-emitting material, and the light-receiving unit (130) may sense visible light of 700 nm (i.e., red light) emitted from the first light-emitting material.

[0100] For another example, the identification material (DM) may be a second light-emitting material that emits light in a second wavelength range of about 1000 nm to about 1020 nm when excited by light in a first wavelength range of about 300 nm to about 340 nm. Accordingly, the light-emitting unit (110) may irradiate ultraviolet light of about 325 nm to the second light-emitting material, and the light-receiving unit (130_1) may sense infrared light of 1012 nm emitted from the second light-emitting material.

[0101] As another example, the identification material (DM) may be a third light-emitting material that emits light in a second wavelength range of about 1000 nm to about 1020 nm when excited by light in a first wavelength range of about 930 nm to about 990 nm. Accordingly, the light-emitting unit (110) may irradiate infrared light of about 980 nm to the third light-emitting material, and the light-receiving unit (130) may sense infrared light of about 1012 nm emitted from the third light-emitting material.

[0102] The embodiment illustrated in FIGS. 2a and 2b may include a light emitting unit (110) composed of an ultraviolet light emitting diode and a light emitting unit (110_1) composed of an infrared light emitting diode.

[0103] In one embodiment, the semiconductor chip (120) may be formed of an application specific integrated circuit (ASIC) that controls the overall operation of the optical sensor package (100).

[0104] In one embodiment, the light receiving unit (130_1) may be formed of at least one light receiving diode that allows current to flow when receiving light (L') of a second wavelength that is different from light (L) of a first wavelength. For example, the light receiving unit (130_1) illustrated in FIGS. 2A and 2B may be an RGB detection sensor. The RGB detection sensor may include a first photodiode (131) that detects red light, a second photodiode (132) that detects green light, and a third photodiode (133) that detects blue light. In addition, the light receiving unit (130_1) may further include an infrared light receiving diode (134) that can receive an infrared wavelength (i.e., about 1000 nm to about 1020 nm).

[0105] Accordingly, light emitted from the light emitting unit (110) composed of an ultraviolet light emitting diode can be detected by the RGB detection sensor (131, 132, 133) of the light receiving unit (130_1) when the identification material included in the detection object (OBJ) is the first light emitting material, and can be detected by the infrared light receiving diode (134) of the light receiving unit (130_1) when the identification material is the second light emitting material.

[0106] In addition, the infrared light of the first wavelength emitted from the light emitting unit (110_1) composed of an infrared light emitting diode can be excited into infrared light of the second wavelength and detected by the infrared light receiving diode (134) of the light receiving unit (130_1) when the identification material (DM) included in the detection object (OBJ) is a third light emitting material. Meanwhile, the infrared light of the first wavelength emitted from the light emitting unit (110_1) composed of an infrared light emitting diode can be detected as infrared light of the first wavelength by the infrared light receiving diode (134) of the light receiving unit (130_1).

[0107] In one embodiment, the optical sensor package (100) may include a first conductive member (W1_1). In one embodiment, the first conductive member (W1_1) may electrically connect the first element (PE1_1) and the light emitting portion (110_1).

[0108] In one embodiment, the light receiving portion (130_1) may be placed on the semiconductor chip (120). In addition, the height (H1) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the semiconductor chip (120) may be higher than the height (H2) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the light emitting portion (110).

[0109] As described above with reference to FIGS. 1A to 1C, the optical sensor package (100) illustrated in FIGS. 2A and 2B also has a semiconductor chip (120) with a barrier function, so that the crosstalk phenomenon is prevented, and thus the sensing sensitivity of the optical sensor package (100) can be expected to be improved.

[0110] FIG. 3a is a plan view of an optical sensor package according to one embodiment, and FIG. 3b is a cross-sectional view of the optical sensor package taken along line III-III' of FIG. 3a.

[0111] The optical sensor package (100) illustrated in FIGS. 3A and 3B differs from the optical sensor package (100) illustrated in FIGS. 1A to 1C in that it includes an infrared photodiode instead of the RGB detection sensor, with the remaining components being substantially the same. Hereinafter, the components with differences will be primarily described, and redundant descriptions of the same components will be omitted.

[0112] Referring to FIGS. 3a and 3b, an optical sensor package (100) according to one embodiment may include a package substrate (SUB), a light emitting portion (110), a semiconductor chip (120), a light receiving portion (130_2), and a molding member (ENC).

[0113] One side of the detection target (OBJ) may include an identification material (DM).

[0114] The identification material (DM) can be excited by absorbing light of a predetermined wavelength range, and in this case, 'the material being excited' can mean that the state of the material changes from a ground state to an excited state. Thereafter, during the process of the state of the identification material (DM) changing from an excited state to a ground state, light of a predetermined wavelength range can be emitted from the luminescent material.

[0115] In one embodiment, the identification material (DM) can be excited by light irradiated by the light emitting unit (110) and can emit light of a wavelength range different from the wavelength range of the irradiated light. For example, the identification material (DM) can be excited by light of a first wavelength range irradiated from the light emitting unit (110) and can emit light of a second wavelength range different from the first wavelength range.

[0116] For example, the identification material (DM) may be a second light-emitting material that emits light in a second wavelength range of about 1000 nm to about 1020 nm when excited by light in a first wavelength range of about 300 nm to about 340 nm. Accordingly, the light-emitting unit (110) may irradiate ultraviolet light of about 325 nm to the second light-emitting material, and the light-receiving unit (130_2) may sense infrared light of 1012 nm emitted from the second light-emitting material.

[0117] Both of the light emitting units (110) illustrated in FIGS. 3a and 3b may be ultraviolet light emitting diodes.

[0118] In one embodiment, the semiconductor chip (120) may be formed of an application specific integrated circuit (ASIC) that controls the overall operation of the optical sensor package (100).

[0119] In one embodiment, the light receiving unit (130_2) may be formed of at least one light receiving diode that allows current to flow when receiving light (L') of a second wavelength that is different from light (L) of a first wavelength. For example, the light receiving unit (130_2) illustrated in FIGS. 3A and 3B may be formed of an infrared light receiving diode capable of receiving infrared wavelengths (i.e., about 1000 nm to about 1020 nm).

[0120] Accordingly, the light emitted from the light emitting unit (110) composed of an ultraviolet light emitting diode can be detected by the infrared light receiving diode of the light receiving unit (130_2) when the identification material (DM) included in the detection object (OBJ) is a second light emitting material.

[0121] In one embodiment, the light receiving unit (130_2) may be placed on the semiconductor chip (120). In addition, the height (H1) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the semiconductor chip (120) may be higher than the height (H2) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the light emitting unit (110).

[0122] As described above with reference to FIGS. 1A to 1C, the optical sensor package (100) illustrated in FIGS. 3A and 3B also has a semiconductor chip (120) with a barrier function, so that the crosstalk phenomenon is prevented, and thus the sensing sensitivity of the optical sensor package (100) can be expected to be improved.

[0123] FIG. 4a is a plan view of an optical sensor package according to one embodiment, and FIG. 4b is a cross-sectional view of the optical sensor package taken along line IV-IV' of FIG. 4a.

[0124] The optical sensor package (100) illustrated in FIGS. 4A and 4B differs from the optical sensor package (100) illustrated in FIGS. 1A to 1C in that it further includes an additional light receiving unit (135), and the remaining configurations are substantially the same. Hereinafter, configurations having differences will be primarily described, and redundant descriptions of identical configurations will be omitted.

[0125] Referring to FIGS. 4A and 4B, in one embodiment, the light sensor package (100) may further include an additional light receiving portion (135), a third element (PE3), and a second conductive member (W2).

[0126] In one embodiment, the third element (PE3) may be formed on the first surface (S1) of the package substrate (SUB). The third element (PE3) may be connected to an additional light-receiving unit (135) formed of an infrared light-receiving diode.

[0127] For example, the third element (PE3) may be composed of two terminals including a negative terminal and a positive terminal. The additional light-receiving portion (135) may be directly coupled to either of the two terminals. The second conductive member (W2) may connect the additional light-receiving portion (135) to the other of the two terminals.

[0128] In one embodiment, the third element (PE3) may be disposed on the first surface (S1) opposite the first element (PE1) with respect to the second element (PE2), and may be disposed on the first surface (S1) adjacent to the second element (PE2). In addition, the additional light-receiving unit (135) may be disposed on the first surface (S1) opposite the light-emitting unit (110) with respect to the semiconductor chip (120), and may be disposed on the first surface (S1) adjacent to the semiconductor chip (120).

[0129] Since a semiconductor chip (120) is placed between the additional light receiving unit (135) and the light emitting unit (110), the semiconductor chip (120) can have a barrier function.

[0130] One side of the detection target (OBJ) may include an identification material (DM).

[0131] The identification material (DM) can be excited by light irradiated by the light emitting unit (110) and can emit light of a wavelength range different from the wavelength range of the irradiated light. For example, the identification material (DM) can be excited by light of a first wavelength range irradiated by the light emitting unit (110) and can emit light of a second wavelength range different from the first wavelength range.

[0132] For example, the identification material (DM) may be a first light-emitting material that emits light in a second wavelength range of about 400 nm to about 750 nm when excited by light in a first wavelength range of about 350 nm to about 390 nm. Accordingly, the light-emitting unit (110) may irradiate ultraviolet light of about 365 nm to the first light-emitting material, and the light-receiving unit (130) may sense visible light of 700 nm (i.e., red light) emitted from the first light-emitting material.

[0133] For another example, the identification material (DM) may be a second light-emitting material that emits light in a second wavelength range of about 1000 nm to about 1020 nm upon being excited by light in a first wavelength range of about 300 nm to about 340 nm. Accordingly, the light-emitting unit (110) may irradiate ultraviolet light of about 325 nm to the second light-emitting material, and the light-receiving unit (130) may sense infrared light of 1012 nm emitted from the second light-emitting material.

[0134] Accordingly, light emitted from the light emitting unit (110) composed of an ultraviolet light emitting diode can be detected by the RGB detection sensor (131, 132, 133) of the light receiving unit (130) when the identification material (DM) included in the detection object (OBJ) is the first light emitting material, and can be detected by the infrared light receiving diode of the additional light receiving unit (135) when the identification material (DM) is the second light emitting material.

[0135] FIG. 5a is a plan view of an optical sensor package according to one embodiment, and FIG. 5b is a cross-sectional view of the optical sensor package taken along line V-V' of FIG. 5a.

[0136] The optical sensor package (100) illustrated in FIGS. 5A and 5B includes a light emitting portion (110) composed of an ultraviolet light emitting diode and a light emitting portion (110_1) composed of an infrared light emitting diode, and is different from the optical sensor package (100) illustrated in FIGS. 4A and 4B, which includes only a light emitting portion (110) composed of an ultraviolet light emitting diode, in that the package includes a light emitting portion (110_1) composed of an ultraviolet light emitting diode, and the remaining configurations are substantially the same. Hereinafter, configurations having differences will be described, and redundant descriptions of identical configurations will be omitted.

[0137] The light sensor package (100) can detect light emitted from a light emitting unit (110) composed of an ultraviolet light emitting diode by an RGB detection sensor (131, 132, 133) of a light receiving unit (130) when the identification material (DM) included in the detection object (OBJ) is a first light emitting material, and can detect light by an infrared light receiving diode of an additional light receiving unit (135) when the identification material (DM) is a second light emitting material.

[0138] In addition, the infrared light of the first wavelength emitted from the light emitting unit (110_1) composed of the infrared light emitting diode can be excited into infrared light of the second wavelength and detected by the infrared light receiving diode of the additional light receiving unit (135) when the identification material (DM) included in the detection object (OBJ) is a third light emitting material. Meanwhile, the infrared light of the first wavelength emitted from the light emitting unit (110_1) composed of the infrared light emitting diode can be detected by the infrared light receiving diode of the additional light receiving unit (135) as infrared light of the first wavelength.

[0139] Since a semiconductor chip (120) is placed between the additional light receiving unit (135) and the light emitting unit (110, 110_1), the semiconductor chip (120) can have a barrier function.

[0140] FIG. 6a is a plan view of an optical sensor package according to one embodiment, and FIG. 6b is a cross-sectional view of the optical sensor package taken along line VI-VI' of FIG. 6a.

[0141] The optical sensor package (100) illustrated in FIGS. 6A and 6B is different from the optical sensor package (100) illustrated in FIGS. 5A and 5B, which includes an RGB detection sensor and an additional light receiving unit (135) comprised of an infrared light receiving diode, in that it does not include an RGB detection sensor and only includes an additional light receiving unit (135) comprised of an infrared light receiving diode, and the remaining configurations are substantially the same. Hereinafter, configurations with differences will be described, and redundant descriptions of identical configurations will be omitted.

[0142] The light sensor package (100) illustrated in FIGS. 6A and 6B can detect light emitted from a light emitting unit (110) composed of an ultraviolet light emitting diode by an infrared light receiving diode of an additional light receiving unit (135) when the identification material (DM) included in the detection object (OBJ) is a second light emitting material.

[0143] In addition, the infrared light of the first wavelength emitted from the light emitting unit (110_1) composed of the infrared light emitting diode can be excited into infrared light of the second wavelength and detected by the infrared light receiving diode of the additional light receiving unit (135) when the identification material (DM) included in the detection object (OBJ) is a third light emitting material. Meanwhile, the infrared light of the first wavelength emitted from the light emitting unit (110_1) composed of the infrared light emitting diode can be detected by the infrared light receiving diode of the additional light receiving unit (135) as infrared light of the first wavelength.

[0144] Since a semiconductor chip (120) is placed between the additional light receiving unit (135) and the light emitting unit (110, 110_1), the semiconductor chip (120) can have a barrier function.

[0145] FIG. 7a is a plan view of an optical sensor package according to one embodiment, and FIG. 7b is a cross-sectional view of the optical sensor package taken along line VII-VII' of FIG. 7a.

[0146] The optical sensor package (100) illustrated in FIGS. 7A and 7B is different from the optical sensor package (100) illustrated in FIGS. 1A to 1C, which includes a light receiving unit (130) composed of an RGB detection sensor arranged on a semiconductor chip (120), in that it does not include a semiconductor chip (120) and includes a light receiving unit (130) composed of an RGB detection sensor, but the remaining configurations are substantially the same. Hereinafter, configurations with differences will be mainly described, and redundant descriptions of identical configurations will be omitted.

[0147] Referring to FIGS. 7a and 7b, in one embodiment, the light sensor package (100) may include a light receiving portion (130) configured as an RGB detection sensor, a fourth element (PE4), and a third conductive member (W3).

[0148] In one embodiment, the fourth element (PE4) may be formed on the first surface (S1) of the package substrate (SUB). The fourth element (PE4) may be connected to a light receiving unit (130) formed of an RGB detection sensor. The RGB detection sensor may include a first photodiode (131) for detecting red light, a second photodiode (132) for detecting green light, and a third photodiode (133) for detecting blue light.

[0149] For example, the fourth element (PE4) may be composed of two terminals including a cathode terminal and an anode terminal. The first photodiode (131) may be directly coupled to either of the two terminals. The third conductive member (W3) may connect the first photodiode (131) to the other of the two terminals. The second photodiode (132) may be directly coupled to either of the two terminals. The third conductive member (W3) may connect the second photodiode (132) to the other of the two terminals. Similarly, the third photodiode (133) may be directly coupled to either of the two terminals. The third conductive member (W3) may connect the third photodiode (133) to the other of the two terminals.

[0150] Since the light receiving unit (130) can sense only visible light, theoretically, the probability of crosstalk occurring due to light emitted from the light emitting unit (110) composed of an ultraviolet light emitting element may not be large. Based on this, unlike the embodiments illustrated in FIGS. 1A to 6B, this embodiment omits the semiconductor chip (120) having a partition function. That is, the optical sensor package (100) illustrated in FIGS. 7A and 7B has advantages in terms of miniaturization and reduced production costs, but in reality, unless there is a physical shielding structure, there is a probability that the sensing sensitivity will deteriorate due to the introduction of various noises.

[0151] Conversely, by further forming a partition structure in the embodiment illustrated in FIGS. 1A to 6B, such as the optical sensor package (100) illustrated in FIGS. 8A to 9B described later, the possibility of crosstalk occurrence can be further reduced, thereby enhancing the improvement in sensing sensitivity.

[0152] Hereinafter, for convenience of explanation, FIGS. 8a to 9b illustrate an embodiment in which a bulkhead structure is added to the optical sensor package (100) illustrated in FIGS. 1a to 1c. However, the present invention is not limited thereto, and it goes without saying that a bulkhead structure may also be added to the optical sensor package (100) illustrated in FIGS. 2a to 7b.

[0153] Fig. 8a is a plan view of an optical sensor package according to one embodiment. Fig. 8b is a cross-sectional view of the optical sensor package taken along line VIII-VIII' of Fig. 8a.

[0154] The optical sensor package (100) illustrated in FIGS. 8A and 8B differs from the optical sensor package (100) illustrated in FIGS. 1A and 1B, which does not include a partition wall (PTW), in that a partition wall (PTW) is arranged between the light emitting portion (110) and the light receiving portion (130) (or, semiconductor chip (120)), but the remaining configurations are substantially the same. Hereinafter, configurations with differences will be described, and redundant descriptions of identical configurations will be omitted.

[0155] Referring to FIGS. 1A to 1C, 8A, and 8B, a partition wall (PTW) is positioned between the light emitting unit (110) and the light receiving unit (130) to prevent light output from the light emitting unit (110) from entering the light receiving unit (130).

[0156] It is preferable that the partition wall (PTW) be formed of a material having low light transmittance for light emitted from the light emitting unit (110) in order to reduce the incidence of light emitted from the light emitting unit (110) on the light receiving unit (130). For example, the partition wall (PTW) can be formed using a black epoxy molding compound (EMC).

[0157] In the past, when a separately manufactured partition wall member was bonded to a package substrate (SUB) using an adhesive resin or the like, there was a problem in that light from the light emitting portion (110) escaped through the portion where the adhesive resin was formed and entered the light receiving portion (130). According to the manufacturing method of the optical sensor package (100) of the present invention, which will be described later, the partition wall (PTW) can be directly formed on the package substrate (SUB) using a transfer molding technique. In this way, the optical sensor package (100) of the present invention can effectively prevent light leakage caused by the adhesive resin by forming the partition wall (PTW) on the package substrate (SUB) without the adhesive resin.

[0158] In addition, since the partition wall (PTW) is bonded to the package substrate (SUB), it can be formed of a material having a similar thermal expansion coefficient to that of the package substrate (SUB). For example, the partition wall (PTW) can have a thermal expansion coefficient that is 0.8 to 1.2 times that of the package substrate (SUB). In this case, the bonding force between the package substrate (SUB) and the partition wall (PTW) increases, and the warpage of the partition wall (PTW) is reduced, so that the partition wall (PTW) can stably maintain a bonding state with the package substrate (SUB).

[0159] This partition wall (PTW) is located only between the light-receiving portion (130) and the light-emitting portion (110), as shown in FIGS. 8a and 8b, but in an optical sensor package (100) according to another embodiment, the partition wall (PTW) may be additionally formed along the perimeter of the package substrate (SUB) in addition to between the light-receiving portion (130) and the light-emitting portion (110), as shown in FIGS. 9a and 9b.

[0160] The optical sensor package (100) may include a molding member (ENC) disposed on the upper surface of the exposed package substrate (SUB) portion, a light emitting portion (110), a semiconductor chip (120), and a light receiving portion (130).

[0161] In one embodiment, the molding member (ENC) may be formed of a light-transmitting material. For example, the molding member (ENC) may be a transparent molding compound (CMC). The molding member (ENC) may guide light emitted from the light-emitting unit (110) to be transmitted to the detection target (OBJ) of the optical sensor package (100).

[0162] The upper surface of the bulkhead (PTW) is positioned on a plane with respect to the upper surface of the molding member (ENC), and the remaining side surfaces of the bulkhead (PTW) except for the side surfaces facing the light-emitting portion (110), the light-receiving portion (130), and the semiconductor chip (120) and the side surfaces of the molding member (ENC) can be positioned on a plane with respect to each other.

[0163] Fig. 9a is a plan view of an optical sensor package according to one embodiment. Fig. 9b is a cross-sectional view of the optical sensor package taken along line VIIII-VIIII' of Fig. 9a.

[0164] The optical sensor package (100) illustrated in FIGS. 9A and 9B is different from the optical sensor package (100) illustrated in FIGS. 8A and 8B in that the partition wall (PTW) is arranged only between the light emitting portion (110) and the light receiving portion (130) (or the semiconductor chip (120)) in that it includes a second partition wall portion extending along the edge of the package substrate (SUB) in the first plane direction (S1) (e.g., the plane in the +Z direction), and the remaining configurations are substantially the same. Hereinafter, configurations having differences will be mainly described, and redundant descriptions of identical configurations will be omitted.

[0165] Referring to FIGS. 9A and 9B, the optical sensor package (100) may include a first partition wall (PTW1) disposed between a light emitting portion (110) and a light receiving portion (130) (or a semiconductor chip (120)) and a second partition wall (PTW2) extending in the direction of the first surface (S1) (e.g., the surface in the +Z direction) along the edge of the package substrate (SUB).

[0166] It is preferable that the partition wall (PTW) be formed of a material having low light transmittance for light emitted from the light emitting unit (110) in order to reduce the incidence of light emitted from the light emitting unit (110) on the light receiving unit (130). For example, the partition wall (PTW) can be formed using a black epoxy molding compound (EMC).

[0167] The optical sensor package (100) may include a molding member (ENC) including a first molding member (ENC1) disposed on the upper surface of a portion of an exposed package substrate (SUB) and a light-emitting portion (110), and a second molding member (ENC2) disposed on the upper surface of another portion of the exposed package substrate (SUB) and a light-receiving portion (130) and a semiconductor chip (120).

[0168] In one embodiment, the molding member (ENC) may be formed of a light-transmitting material. For example, the molding member (ENC) may be a transparent molding compound (CMC). The molding member (ENC) may guide light emitted from the light-emitting unit (110) to be transmitted to the detection target (OBJ) of the optical sensor package (100).

[0169] The inner surface of the partition wall (PTW) in contact with the first molding portion (ENC1) may have a first inclined surface (CL1) that forms an obtuse angle with the first surface (S1) (or upper surface) of the package substrate (SUB).

[0170] A reflective material may be placed on the first inclined surface (CL1). The reflective material may reflect light emitted from the light emitting portion (110) to evenly spread it. For example, the reflective material may include at least one material selected from the group consisting of glass, quartz, ceramic, polymethyl methacrylate (PMMA), polycarbonate, silicone resin, and plastics WEMC (White Epoxy Molding Compound), PPA (Polyphthalamide), and PCT (Polycyclo hexylene dimethylene-eterephthalate).

[0171] Additionally, the inner surface of the partition wall (PTW) in contact with the second molding portion (ENC2) may have a second inclined surface (CL2) that forms an obtuse angle with the first surface (S1) (or upper surface) of the package substrate (SUB).

[0172] Fig. 10a is an external perspective view showing a substrate strip for an optical sensor package according to one embodiment of the present invention. Fig. 10b is a cross-sectional view of the substrate strip cut along line X-X' of the substrate strip of Fig. 10a.

[0173] First, as illustrated in FIGS. 10A and 10B, a substrate strip (1000) for an optical sensor package according to one embodiment of the present invention may include substrate units (SA) that become substrates of individual optical sensor packages after singulation (or cutting process) and a dummy area (DA) excluding the substrate units (SA).

[0174] For example, the substrate strip (1000) may be a printed circuit board (PCB) array, or a thin panel-shaped structure formed in a lengthwise direction so that a wiring layer (WL) corresponding to the first element (PE1), the second element (PE2), the third element (PE3), and the fourth element (PE4) described above in FIGS. 1A to 9B is formed, and a plurality of light sensor elements (e.g., a light emitting unit (110), a semiconductor chip (120), etc.) can be integrated and mounted.

[0175] Such a substrate strip (1000) may be a support having sufficient strength and durability to support a plurality of optical sensor elements (e.g., light emitting portions (110), semiconductor chips (120), etc.), bonding wires (BW) corresponding to the first conductive member (W1), the second conductive member (W2), and the third conductive member (W3) described above in FIGS. 1A to 9B, a partition wall (PTW) for individual elements, and a molding member (ENC) for individual elements.

[0176] A plurality of optical sensor packages (100) can be arranged in a matrix in an n × m matrix in the length direction and width direction at regular intervals on the substrate strip (1000).

[0177] The bonding wire (BW) electrically connects the light sensor elements (e.g., the light emitting portion (110)) and the wiring layer (WL), and can be a type of signal transmission medium that can transmit an electrical signal between the light sensor elements (e.g., the light emitting portion (110)) and the wiring layer (WL) to the outside.

[0178] The barrier wall (PTW) is a structure for preventing light emitted from the light emitting portion (110) from being directly incident on the light receiving portion (see 130 in FIG. 1A) disposed on the semiconductor chip (120), and may be transfer molded on the substrate strip (1000). The barrier wall (PTW) may be disposed between the light emitting portion (110) and the light receiving portion (130) (or the semiconductor chip (120)).

[0179] It is preferable that the partition wall (PTW) be formed of a material having low light transmittance to light emitted from the light emitting portion (110). For example, the partition wall (PTW) can be formed using a black epoxy molding compound (EMC).

[0180] Additionally, the molding member (ENC) for individual elements can be transfer molded onto the substrate strip (1000) in a shape that individually surrounds the light sensor elements (e.g., light emitting unit (110), semiconductor chip (120), etc.) and bonding wires (BW).

[0181] The molding member (ENC) may be applied with a light-transmitting encapsulant such as a transparent molding compound that can transmit external light to the light sensor package (100) or transmit light from the light sensor package (100) to the outside at all times. However, the present invention is not limited thereto, and a reflective encapsulant such as a white epoxy molding compound (WEMC) may also be applied.

[0182] Figures 11 to 17 are cross-sectional views showing the manufacturing process of the substrate strip for the optical sensor package of Figures 10a and 10b step by step.

[0183] Referring to FIGS. 11 to 17, a manufacturing process of an optical sensor package (100) according to one embodiment of the present invention is described step by step.

[0184] First, as illustrated in Fig. 11, a substrate strip (1000) on which a wiring layer (WL) is not formed is prepared, and a partition wall (PTW) for individual components can be molded on the substrate strip (1000). For example, a partition wall (PTW) for individual components can be molded by transfer molding using a first mold (M1) in which a plurality of first cavities (CV1) capable of molding a partition wall (PTW) for individual components are formed in one portion.

[0185] It is preferable that the partition wall (PTW) be formed of a material having low light transmittance to light emitted from the light emitting portion (110). For example, the partition wall (PTW) can be formed using a black epoxy molding compound. The process temperature of the epoxy molding compound is approximately 170°C.

[0186] The shrinkage rate of epoxy molding compounds is lower than that of transparent molding compounds used in clear molding components (ENC). Therefore, the probability of warpage occurring in the substrate strip after molding using epoxy molding compounds may be lower than the probability of warpage occurring in the substrate strip after molding using transparent molding compounds.

[0187] After a thermal curing process, as shown in Fig. 12, a substrate strip (1000) having a partition wall (PTW) formed thereon is prepared, and as shown in Fig. 13, a wiring layer (WL) can be formed on the substrate strip (1000). At this time, the wiring layer (WL) can correspond to the first element (PE1), the second element (PE2), the third element (PE3), and the fourth element (PE4).

[0188] Next, as illustrated in FIG. 14, optical sensor elements can be mounted on each substrate unit (SA) of the substrate strip (1000). For example, a light emitting unit (110) can be connected to a first element (PE1), and a semiconductor chip (120) can be connected to a second element (PE2).

[0189] At this time, in order to help explain the manufacturing process, FIG. 14 schematically illustrates some of the sensor elements arranged on the substrate unit (SA) in a greatly enlarged or greatly simplified manner, and the shape and type thereof are not necessarily limited to the drawing and can be modified and modified in various forms.

[0190] Next, as illustrated in FIG. 15, the light sensor elements (e.g., light emitting unit (110)) and the wiring layer (e.g., first element (PE1)) can be electrically connected with a bonding wire (BW).

[0191] Next, as illustrated in FIG. 16, individual element molding members (ENC) can be transferred molded on a substrate strip (1000) in a shape that individually surrounds the light sensor elements (e.g., light emitting unit (110), semiconductor chip (120)) and the bonding wire (BW).

[0192] As illustrated in Fig. 16, transfer molding can be performed by flipping the substrate strip (1000) over, mounting and fixing the second cavities (CV2) and the substrate units (SA) provided in the second mold (M2) so that they face each other, and then providing a transparent molding compound to the second cavity (CV2) to reverse mold an individual element molding member (ENC). At this time, the process temperature of the transparent molding compound is approximately 150°C.

[0193] Next, as illustrated in FIG. 17, the array can be singulated by cutting it along a cut line (CUT) into individual optical sensor packages.

[0194] In this way, according to the method for manufacturing an optical sensor according to one embodiment of the present invention, by first performing a step of forming a partition wall (PTW) using an epoxy molding compound having a relatively low shrinkage rate during molding, and then performing a step of forming a molding member (ENC) using a transparent molding compound having a relatively high shrinkage rate, it is expected that the effect of improving the process yield can be expected by minimizing peeling and cracking phenomena that may occur during the manufacturing process.

[0195] On the other hand, according to the conventional optical sensor package manufacturing process, after forming a molding member with a transparent molding compound as a sealant, a partition wall is formed as a subsequent process, and warpage generated during the formation of the molding member is stretched by an external force before molding to form the partition wall is performed. Therefore, problems such as peeling between the package substrate and sensor elements, peeling between the package substrate and the molding member, and micro-cracks occurring in the bonding wire head occur during this process.

[0196] Fig. 18 is a flowchart for explaining a method for manufacturing an optical sensor package according to one embodiment of the present invention.

[0197] Referring to FIGS. 10A to 18, a method for manufacturing an optical sensor package according to one embodiment may include a step (S100) of forming a partition wall (PTW) on each of the substrate units (SA) on a substrate strip (1000), a step (S200) of mounting sensor elements such as a light emitting unit (110) and a light receiving unit (130) on each of the substrate units (SA), a step (S300) of forming a molding member (ENC) using a sealant on each of the substrate units (SA), and a singulation step (S400) of cutting the substrate strip (1000) into substrate unit (SA) units.

[0198] The step of mounting sensor elements (S200) may further include a step of mounting a semiconductor chip (120) on substrate units (SA). At this time, the light receiving unit (130) may be placed on at least one of the semiconductor chip (120) and the substrate unit (SA) opposite the light emitting unit (110) with respect to the semiconductor chip (120).

[0199] The height from the upper surface of the substrate strip (1000) to the upper surface of the semiconductor chip (120) may be higher than the height from the upper surface of the substrate strip (1000) to the upper surface of the light emitting portion (110).

[0200] The step (S100) of forming the bulkhead (PTW) can be performed by transfer molding using a black epoxy molding compound.

[0201] The step (S300) of forming a molding member may be transfer molding using a transparent molding compound as a sealing agent. At this time, the transfer molding may be reverse molding in which the substrate strip is turned over, the second cavities (CV2) provided in the second mold (M2) and the substrate units (SA) are respectively mounted and fixed so that they face each other, and the transparent molding compound is provided to the second cavity (CV2).

[0202] FIG. 19 is a cross-sectional view of a substrate strip for an optical sensor package according to another embodiment of the present invention.

[0203] The embodiment illustrated in Fig. 19 differs from the embodiments illustrated in Figs. 10a and 10b in that the shapes of the partition walls (PTW1, PTW2) are different and the molding methods of the molding members (ENC1, ENC2) are different, but the remaining configurations are substantially the same. The following description focuses on the differences, and redundant descriptions of the same configurations are omitted.

[0204] Referring to FIG. 19, the barrier wall (PTW) is a structure for preventing light emitted from the light emitting portion (110) from being directly incident on the light receiving portion (see 130 of FIG. 1A) disposed on the semiconductor chip (120), and can be transfer molded on the substrate strip (1000).

[0205] The partition wall (PTW) may include a first partition wall portion (PTW1) disposed between the light-emitting portion (110) and the light-receiving portion (130) (or, semiconductor chip (120)) and a second partition wall portion (PTW2) disposed along the edge of the substrate units (SA).

[0206] The inner surface of the bulkhead (PTW) may form an obtuse angle with the upper surface of the substrate strip (1000).

[0207] It is preferable that the partition wall (PTW) be formed of a material having low light transmittance to light emitted from the light emitting portion (110). For example, the partition wall (PTW) can be formed using a black epoxy molding compound (EMC).

[0208] Additionally, the molding member (ENC) for individual elements can be dispensed and molded on the substrate strip (1000) in a shape that individually surrounds the light sensor elements (e.g., light emitting unit (110), semiconductor chip (120), etc.) and bonding wires (BW).

[0209] The molding member (ENC) may be applied with a light-transmitting encapsulant such as a transparent molding compound that can transmit external light to the light sensor package (100) or transmit light from the light sensor package (100) to the outside at all times. However, the present invention is not limited thereto, and a reflective encapsulant such as a white epoxy molding compound (WEMC) may also be applied.

[0210] Figures 20 to 26 are cross-sectional views showing the manufacturing process of the substrate strip for the optical sensor package of Figure 19 step by step.

[0211] Referring to FIGS. 20 to 26, a manufacturing process of an optical sensor package (100) according to one embodiment of the present invention is described step by step.

[0212] First, as illustrated in Fig. 20, a substrate strip (1000) on which a wiring layer (WL) is not formed is prepared, and a partition wall (PTW) for individual components can be molded on the substrate strip (1000). For example, a partition wall (PTW) for individual components can be molded by transfer molding using a third mold (M3) in which a plurality of third cavities (CV3) capable of molding a partition wall (PTW) for individual components are formed in one portion.

[0213] The inner surface of the bulkhead (PTW) may have a sloped surface that forms an obtuse angle with the upper surface of the substrate strip (1000).

[0214] A reflective material may be placed on the inclined surface. The reflective material may reflect light emitted from the light emitting unit (110) and evenly spread it. For example, the reflective material may include at least one material selected from the group consisting of glass, quartz, ceramic, polymethyl methacrylate (PMMA), polycarbonate, silicone resin, and plastics such as white epoxy molding compound (WEMC), polyphthalamide (PPA), and polycyclo hexylene dimethylene-eterephthalate (PCT).

[0215] It is preferable that the partition wall (PTW) be formed of a material having low light transmittance to light emitted from the light emitting portion (110). For example, the partition wall (PTW) can be formed using a black epoxy molding compound. The process temperature of the epoxy molding compound is approximately 170°C.

[0216] The shrinkage rate of epoxy molding compounds is lower than that of transparent molding compounds used in clear molding components (ENC). Therefore, the probability of warpage occurring in the substrate strip after molding using epoxy molding compounds may be lower than the probability of warpage occurring in the substrate strip after molding using transparent molding compounds.

[0217] After a thermal curing process, a substrate strip (1000) having a barrier wall (PTW) formed thereon is prepared, and as illustrated in Fig. 22, a wiring layer (WL) can be formed on the substrate strip (1000). At this time, the wiring layer (WL) can correspond to a first element (PE1), a second element (PE2), a third element (PE3), and a fourth element (PE4).

[0218] Next, as illustrated in FIG. 23, optical sensor elements can be mounted on each substrate unit (SA) of the substrate strip (1000). For example, a light emitting unit (110) can be connected to a first element (PE1), and a semiconductor chip (120) can be connected to a second element (PE2).

[0219] At this time, in order to help explain the manufacturing process, FIG. 23 schematically illustrates some of the sensor elements arranged on the substrate unit (SA) in a greatly enlarged or greatly simplified manner, and the shape and type thereof are not necessarily limited to the drawing and can be modified and modified in various forms.

[0220] Next, as illustrated in FIG. 24, the light sensor elements (e.g., light emitting unit (110)) and the wiring layer (e.g., first element (PE1)) can be electrically connected with a bonding wire (BW).

[0221] Next, as illustrated in FIG. 25, individual element molding members (ENC) can be dispensed and molded on the substrate strip (1000) in a shape that individually surrounds the light sensor elements (e.g., light emitting unit (110), semiconductor chip (120)) and the bonding wire (BW).

[0222] The light sensor package (100) may include a first molding part (ENC1) and a second molding part (ENC2) in each of a first region (A1) including a light emitting part (110) surrounded by a partition wall (PTW) and a second region (A2) including a light receiving part (130) (or, semiconductor chip (120)) surrounded by a partition wall (PTW). As illustrated in FIG. 25, dispensing molding uses a method of applying a transparent molding compound to the inside of the first region (A1) and the second region (A2) using a discharge needle (ND).

[0223] Afterwards, a polishing process is performed to smoothly process the upper surfaces of the bulkheads (PTW1, PTW2) and the upper surfaces of the molding members (ENC1, ENC2) so that the upper surfaces of the bulkheads (PTW1, PTW2) and the molding members (ENC1, ENC2) can be arranged on the same plane.

[0224] Next, as illustrated in FIG. 26, the array can be singulated by cutting it along a cut line (CUT) into individual optical sensor packages.

[0225] In this way, according to the method for manufacturing an optical sensor according to one embodiment of the present invention, by first performing a step of forming a partition wall (PTW) using an epoxy molding compound having a relatively low shrinkage rate during molding, and then performing a step of forming a molding member (ENC) using a transparent molding compound having a relatively high shrinkage rate, it is expected that the effect of improving the process yield can be expected by minimizing peeling and cracking phenomena that may occur during the manufacturing process.

[0226] FIG. 27 is a flowchart illustrating a method for manufacturing an optical sensor package according to another embodiment of the present invention.

[0227] Referring to FIGS. 19 to 27, a method for manufacturing an optical sensor package according to one embodiment may include a step (S110) of forming a partition wall (PTW) on each of the substrate units (SA) on a substrate strip (1000), a step (S210) of mounting sensor elements such as a light-emitting unit (110) and a light-receiving unit (130) on each of the substrate units (SA), a step (S310) of forming a molding member (ENC) using a sealant on each of the substrate units (SA), and a singulation step (S410) of cutting the substrate strip (1000) into substrate units (SA). At this time, the partition wall (PTW) may include a first partition wall portion (PTW1) disposed between the light-emitting unit (110) and the light-receiving unit (130) (or, a semiconductor chip (120)) and a second partition wall portion (PTW2) disposed along the edge of the substrate units (SA).

[0228] The step of mounting sensor elements (S210) may further include a step of mounting a semiconductor chip (120) on substrate units (SA). At this time, the light receiving unit (130) may be placed on at least one of the semiconductor chip (120) and the substrate unit (SA) opposite the light emitting unit (110) with respect to the semiconductor chip (120).

[0229] The height from the upper surface of the substrate strip (1000) to the upper surface of the semiconductor chip (120) may be higher than the height from the upper surface of the substrate strip (1000) to the upper surface of the light emitting portion (110).

[0230] The step (S110) of forming the bulkhead (PTW) can be performed by transfer molding using a black epoxy molding compound.

[0231] The step (S310) of forming a molding member can be performed by dispensing molding using a transparent molding compound as a sealant. Dispensing molding uses a method of applying a transparent molding compound to the inside of a first area (A1) and a second area (A2) using a discharge needle (ND).

[0232] After this, a polishing step may be further included to smoothly process the upper surface of the bulkhead (PTW) and the upper surface of the molding member (ENC).

[0233] Those skilled in the art will appreciate that the present invention can be implemented in modified forms without departing from the essential characteristics of the above-described description. Therefore, the disclosed methods should be considered illustrative rather than restrictive. The scope of the present invention is set forth in the claims, not the foregoing description, and all differences within the scope equivalent thereto should be construed as being encompassed by the present invention.

Claims

1. A step of forming a partition wall on each of the substrate units on the substrate strip; A step of mounting sensor elements such as a light emitting unit and a light receiving unit on each of the above substrate units; and A step of forming a molding member using a sealant on each of the above substrate units; A method for manufacturing an optical sensor package in which the above-mentioned partition is placed between the above-mentioned light-emitting unit and the above-mentioned light-receiving unit.

2. In paragraph 1, The step of mounting the above sensor elements further includes the step of mounting a semiconductor chip on the substrate units, A method for manufacturing an optical sensor package, wherein the light receiving unit is placed on at least one of the semiconductor chip and the substrate unit opposite the light emitting unit with respect to the semiconductor chip.

3. In paragraph 2, A method for manufacturing an optical sensor package, wherein the height from the upper surface of the substrate strip to the upper surface of the semiconductor chip is higher than the height from the upper surface of the substrate strip to the upper surface of the light-emitting portion.

4. In paragraph 1, A method for manufacturing an optical sensor package, characterized in that the step of forming the above-mentioned bulkhead is performed by transfer molding using a black epoxy molding compound.

5. In paragraph 1, A method for manufacturing an optical sensor package, characterized in that the step of forming the molding member comprises transfer molding using a transparent molding compound as the sealing agent.

6. In paragraph 5, The above transfer molding is, A step of turning over the above substrate strip and mounting and fixing it so that the cavities provided in the mold and the above substrate units each face each other; and A method for manufacturing an optical sensor package, characterized in that it is a reverse molding comprising the step of providing the black epoxy molding compound or the transparent molding compound to the cavity.

7. In paragraph 1, A method for manufacturing an optical sensor package, further comprising a singulation step of cutting the substrate strip into substrate unit units.

8. A step of forming a partition wall on each of the substrate units on the substrate strip; A step of mounting sensor elements such as a light emitting unit and a light receiving unit on each of the above substrate units; and A step of forming a molding member using a sealant on each of the above substrate units; A method for manufacturing an optical sensor package, wherein the above-mentioned partition wall comprises a first partition wall portion arranged between the light-emitting portion and the light-receiving portion and a second partition wall portion arranged along the edge of the substrate units.

9. In paragraph 8, The step of mounting the above sensor elements further includes the step of mounting a semiconductor chip on the substrate units, A method for manufacturing an optical sensor package, wherein the light receiving unit is placed on at least one of the semiconductor chip and the substrate unit opposite the light emitting unit with respect to the semiconductor chip.

10. In paragraph 9, A method for manufacturing an optical sensor package, wherein the height from the upper surface of the substrate strip to the upper surface of the semiconductor chip is higher than the height from the upper surface of the substrate strip to the upper surface of the light-emitting portion.

11. In paragraph 8, The step of forming the above bulkhead is a method for manufacturing an optical sensor package by transfer molding using a black epoxy molding compound.

12. In paragraph 11, The above transfer molding is, A step of placing a mold on the substrate strip, and mounting and fixing the mold so that the cavities provided in the mold and the substrate units face each other; and A method for manufacturing an optical sensor package, characterized in that the molding comprises a step of providing the black epoxy molding compound to the cavity.

13. In paragraph 12, A method for manufacturing an optical sensor package, wherein the cavity is formed so that the inner surface of the partition wall has an inclined surface that forms an obtuse angle with the upper surface of the substrate strip.

14. In paragraph 11, A method for manufacturing an optical sensor package, characterized in that the step of forming the molding member comprises dispensing molding by using a transparent molding compound as the sealing agent to inject the sealing agent into a first region including the light-emitting portion surrounded by the partition wall and a second region including the light-receiving portion surrounded by the partition wall.

15. In paragraph 8, A method for manufacturing an optical sensor package, further comprising: a step of cutting the substrate strip into substrate unit units.

Images