Plating device and plating method

Abstract

The present invention corrects variability in the plating film thickness of a peripheral part of a substrate and improves the uniformity of plating film thickness in the entirety of a plated surface.　A plating module 400 comprises: a plating bath 410 that is configured to accommodate a plating solution; an anode 430 that is disposed in the plating bath 410; a substrate holder 440 that is configured to hold the a substrate Wf such that a plating target surface Wf-a faces downward; a raising / lowering mechanism 443 that is configured to raise and lower the substrate holder 440; a rotation mechanism 447 that is configured to rotate the substrate holder 440; a shield member 481 that is capable of shielding against an electric field formed between the anode 430 and the substrate Wf; and a shield mechanism 485 that is configured to dispose the shield member 481 in a manner switching between a reference position which is between the anode 430 and the substrate Wf, a shield position at which an electric field shield area is greater than at the reference position, and a retracted position which is for retraction from between the anode 430 and the substrate Wf.

Description

Plating apparatus and plating method

[0001] The present application relates to a plating apparatus and a plating method.

[0002] A cup-type electrolytic plating apparatus is known as an example of a plating apparatus. In a cup-type electrolytic plating apparatus, a substrate (e.g., a semiconductor wafer) held by a substrate holder is immersed in a plating solution with the surface to be plated facing downward, and a voltage is applied between the substrate and an anode to deposit a conductive film on the surface of the substrate.

[0003] It is known that a cup-type electroplating apparatus uses a shielding member to shield the electric field formed between the anode and the substrate. For example, Patent Document 1 discloses an electroplating apparatus that shields a specific portion of the substrate only at a desired timing by moving a shielding member between the specific portion of the substrate and the anode when the specific portion of the substrate rotates within a predetermined rotation angle range.

[0004] Patent No. 6901646

[0005] However, the electrolytic plating apparatus of the prior art leaves room for improvement in correcting irregularities in the plating film thickness at the periphery of the substrate and improving the uniformity of the plating film thickness over the entire surface to be plated.

[0006] That is, the plating thickness at the periphery of the substrate's plating surface may be locally varied due to various influences, such as uneven power supply to the contacts on the substrate holder, uneven seed thickness, and pattern shape. For example, the periphery of the substrate may contain a mixture of standard plating thicknesses, thicker than the standard plating thicknesses, and thinner than the standard plating thicknesses. Also, the overall plating thickness at the periphery of the substrate may be thicker or thinner than that of a standard substrate.

[0007] Therefore, one object of the present invention is to correct the irregularities in the plating film thickness at the peripheral edge of the substrate and improve the uniformity of the plating film thickness over the entire surface to be plated.

[0008] According to one embodiment, a plating apparatus is disclosed that includes: a plating tank configured to contain a plating solution; an anode disposed in the plating tank; a substrate holder configured to hold a substrate with its surface to be plated facing downward; a lifting mechanism configured to raise and lower the substrate holder; a rotation mechanism configured to rotate the substrate holder; a shielding member capable of shielding an electric field formed between the anode and the substrate; and a shielding mechanism configured to switchably position the shielding member among a reference position between the anode and the substrate, a shielding position where the electric field shielding area is larger than the reference position, and a retracted position where the shielding member is retracted from between the anode and the substrate.

[0009] FIG. 1 is a perspective view showing the overall configuration of a plating apparatus according to an embodiment of the present invention. FIG. 2 is a plan view showing the overall configuration of a plating apparatus according to an embodiment of the present invention. FIG. 3 is a longitudinal cross-sectional view schematically showing the configuration of a plating module according to an embodiment of the present invention, illustrating a state in which a shielding member has been moved to a reference position. FIG. 4 is a longitudinal cross-sectional view schematically showing the configuration of a plating module according to an embodiment of the present invention, illustrating a state in which a shielding member has been moved to a shielding position. FIG. 5 is a longitudinal cross-sectional view schematically showing the configuration of a plating module according to an embodiment of the present invention, illustrating a state in which a shielding member has been moved to a retracted position. FIG. 6 is a plan view schematically showing states in which a shielding member is disposed in a retracted position, a reference position, and a shielding position. FIG. 7 is a plan view schematically showing an example in which the position of a shielding member is switched depending on the distribution of a plating film thickness at a peripheral edge of a substrate. FIG. 8 is a flowchart of a plating method using a plating module according to an embodiment of the present invention. FIG. 9 is a plan view schematically showing an example in which the position of a shielding member is switched depending on the type of substrate. FIG. 10 is a flowchart of a plating method using a plating module according to an embodiment of the present invention. FIG. 11 is a plan view showing multiple regions included in a resistor according to an embodiment. FIG. 12 is a diagram schematically illustrating an example of plating film thickness when the position of a shielding member is adjusted according to the distribution of plating film thickness on the peripheral edge of the substrate. FIG. 13 is a plan view showing multiple regions included in a resistor according to an embodiment. FIG. 14 is a plan view schematically illustrating an example of switching the position of a shielding member according to the distribution of plating film thickness on the peripheral edge of the substrate. FIG. 15 is a diagram illustrating the relationship between the timing of shielding a first portion Wf-e of the substrate and the rotation speed of a substrate holder. FIG. 16 is a plan view schematically illustrating an example of switching the position of a shielding member according to the distribution of plating film thickness on the peripheral edge of the substrate. FIG. 17 is a plan view schematically illustrating an example of switching the position of a shielding member according to the distribution of plating film thickness on the peripheral edge of the substrate. FIG. 18 is a plan view schematically illustrating an example of switching the position of a shielding member according to the distribution of plating film thickness on the peripheral edge of the substrate. 19 and 20 are plan views schematically illustrating an example of switching the position of a shielding member in accordance with the distribution of plating film thickness on the peripheral edge of a substrate.

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings described below, the same or corresponding components are designated by the same reference numerals, and redundant description will be omitted.

[0011] <Overall Configuration of Plating Apparatus> Fig. 1 is a perspective view showing the overall configuration of the plating apparatus of this embodiment. Fig. 2 is a plan view showing the overall configuration of the plating apparatus of this embodiment. As shown in Figs. 1 and 2, the plating apparatus 1000 includes a load port 100, a transfer robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer 600, a transfer device 700, and a control module 800.

[0012] The load port 100 is a module for loading substrates stored in a cassette such as a FOUP (not shown) into the plating apparatus 1000 and unloading substrates from the plating apparatus 1000 to the cassette. In this embodiment, four load ports 100 are arranged horizontally, but the number and arrangement of the load ports 100 are optional. The transfer robot 110 is a robot for transporting substrates and is configured to transfer substrates between the load port 100, the aligner 120, the pre-wet module 200, and the spin rinse dryer 600. When transferring substrates between the transfer robot 110 and the transfer apparatus 700, the transfer robot 110 and the transfer apparatus 700 can transfer the substrates via a temporary stage (not shown).

[0013] The aligner 120 is a module for aligning the positions of the substrate's orientation flat, notch, and the like in a predetermined direction. In this embodiment, two aligners 120 are arranged horizontally, but the number and arrangement of the aligners 120 are optional. The prewet module 200 wets the surface of the substrate to be plated with a treatment liquid such as pure water or degassed water before plating, thereby replacing air within the pattern formed on the substrate surface with the treatment liquid. The prewet module 200 is configured to perform a prewet process that replaces the treatment liquid within the pattern with a plating liquid during plating, thereby making it easier to supply the plating liquid within the pattern. In this embodiment, two prewet modules 200 are arranged vertically, but the number and arrangement of the prewet modules 200 are optional.

[0014] The presoak module 300 is configured to perform a presoak process, which involves etching away, for example, an oxide film with high electrical resistance present on the surface of a seed layer formed on the surface of a substrate to be plated before plating, using a treatment solution such as sulfuric acid or hydrochloric acid to clean or activate the surface of the substrate to be plated. In this embodiment, two presoak modules 300 are arranged vertically, but the number and arrangement of the presoak modules 300 are optional. The plating module 400 performs plating on the substrate. In this embodiment, two sets of 12 plating modules 400 are arranged vertically, three vertically and four horizontally, for a total of 24 plating modules 400, but the number and arrangement of the plating modules 400 are optional.

[0015] The cleaning module 500 is configured to perform a cleaning process on the substrate to remove plating solution and the like remaining on the substrate after plating. In this embodiment, two cleaning modules 500 are arranged vertically, but the number and arrangement of the cleaning modules 500 are optional. The spin rinse dryer 600 is a module for drying the substrate after cleaning by rotating it at high speed. In this embodiment, two spin rinse dryers are arranged vertically, but the number and arrangement of the spin rinse dryers are optional. The transport device 700 is a device for transporting substrates between multiple modules within the plating apparatus 1000. The control module 800 is configured to control the multiple modules of the plating apparatus 1000 and can be configured, for example, as a general computer or a dedicated computer equipped with an input / output interface with an operator.

[0016] An example of a series of plating processes performed by the plating apparatus 1000 will be described. First, a substrate stored in a cassette is loaded into the load port 100. Next, the transfer robot 110 removes the substrate from the cassette in the load port 100 and transfers the substrate to the aligner 120. The aligner 120 aligns the positions of the orientation flat, notch, etc. of the substrate to a predetermined direction. The transfer robot 110 delivers the substrate, whose direction has been aligned by the aligner 120, to the pre-wet module 200.

[0017] The pre-wet module 200 performs a pre-wet process on the substrate. The transport device 700 transports the substrate that has been subjected to the pre-wet process to the pre-soak module 300. The pre-soak module 300 performs a pre-soak process on the substrate. The transport device 700 transports the substrate that has been subjected to the pre-soak process to the plating module 400. The plating module 400 performs a plating process on the substrate.

[0018] The transfer device 700 transfers the substrate after plating to the cleaning module 500. The cleaning module 500 performs a cleaning process on the substrate. The transfer device 700 transfers the substrate after cleaning to the spin rinse dryer 600. The spin rinse dryer 600 dries the substrate. The transfer robot 110 receives the substrate from the spin rinse dryer 600 and transfers the dried substrate to a cassette on the load port 100. Finally, the cassette containing the substrate is removed from the load port 100.

[0019] <Configuration of Plating Module> Next, the configuration of the plating module 400 will be described. Since the 24 plating modules 400 in this embodiment have the same configuration, only one plating module 400 will be described. FIG. 3 is a vertical cross-sectional view schematically showing the configuration of a plating module in one embodiment, illustrating a state in which the shielding member has moved to the reference position. FIG. 4 is a vertical cross-sectional view schematically showing the configuration of a plating module in one embodiment, illustrating a state in which the shielding member has moved to the shielding position. FIG. 5 is a vertical cross-sectional view schematically showing the configuration of a plating module in one embodiment, illustrating a state in which the shielding member has moved to the retracted position.

[0020] 3 to 5, the plating module 400 includes a plating tank 410 for containing a plating solution. The plating module 400 also includes a membrane 420 that vertically separates the interior of the plating tank 410. The interior of the plating tank 410 is divided by the membrane 420 into a cathode region 422 and an anode region 424.

[0021] The cathode region 422 and the anode region 424 are each filled with plating solution. The plating module 400 includes a nozzle 426 opening toward the cathode region 422 and a supply source 428 for supplying plating solution to the cathode region 422 via the nozzle 426. The plating module 400 also includes a mechanism for supplying plating solution to the anode region 424, but this mechanism is not shown. An anode 430 is provided on the bottom surface of the plating tank 410 in the anode region 424. A resistor 450 is disposed in the cathode region 422 facing the membrane 420, and this resistor 450 is attached directly or indirectly to the plating tank 410. The resistor 450 is a member for ensuring uniformity in the plating process on the plating surface Wf-a of the substrate Wf, and is composed of a plate-like member with a large number of holes formed therein.

[0022] The plating module 400 also includes a substrate holder 440 for holding the substrate Wf with its surface to be plated Wf-a facing downward. The substrate holder 440 includes a power supply contact for supplying power to the substrate Wf from a power source (not shown). The substrate holder 440 also includes a seal ring holder 442 for supporting the outer edge of the surface to be plated Wf-a of the substrate Wf, and a frame 446 for holding the seal ring holder 442 on a substrate holder main body (not shown). The substrate holder 440 also includes a back plate 444 for pressing the back surface of the surface to be plated Wf-a of the substrate Wf, and a shaft 448 attached to the back surface of the substrate pressing surface of the back plate 444.

[0023] The plating module 400 includes a lifting mechanism 443 for lifting and lowering the substrate holder 440, and a rotation mechanism 447 for rotating the substrate holder 440 so that the substrate Wf rotates around a virtual axis of a shaft 448 (a virtual rotation axis extending vertically through the center of the surface Wf-a to be plated). The lifting mechanism 443 and the rotation mechanism 447 can be realized by known mechanisms such as a motor. The plating module 400 is configured to perform plating processing on the surface Wf-a to be plated of the substrate Wf by immersing the substrate Wf in the plating solution in the cathode region 422 using the lifting mechanism 443 and applying a voltage between the anode 430 and the substrate Wf.

[0024] The plating module 400 includes a film thickness sensor 490 configured to measure the plating film thickness along the peripheral edge of the substrate Wf. In this embodiment, the film thickness sensor 490 is attached to the resistor 450 so as to face the peripheral edge of the substrate Wf. The film thickness sensor 490 is configured to measure the plating film thickness along the peripheral edge of the opposing substrate Wf during the plating process using any method, such as optics, an electric field, a magnetic field, or an electric potential. Because the substrate rotates during the plating process, the film thickness sensor 490 can measure the plating film thickness distribution along the circumferential direction of the peripheral edge of the substrate.

[0025] The plating module 400 includes a shielding member 481 for shielding an electric field formed between the anode 430 and the substrate Wf when the plating module 400 is disposed between the anode 430 and the substrate Wf. The shielding member 481 may be, for example, a shielding plate formed in a plate shape. The plating module 400 also includes a shielding mechanism 485 for moving the shielding member 481. The shielding mechanism 485 is configured so that the position of the shielding member 481 can be switched and positioned. Specific examples of the shielding mechanism 485 will be described below.

[0026] 6A and 6B are plan views schematically showing the states in which the shielding member is disposed at the retracted position, the reference position, and the shielding position, respectively. Fig. 6A shows the state in which the shielding member 481 is disposed at the reference position, Fig. 6B shows the state in which the shielding member 481 is disposed at the shielding position, and Fig. 6C shows the state in which the shielding member 481 is disposed at the retracted position.

[0027] 3 to 5 and 6, the shielding mechanism 485 is configured to switch the position of the shielding member 481 between a reference position between the anode 430 and the substrate Wf, a shielding position where the electric field shielding area is larger than that of the reference position, and a retracted position where the shielding member 481 is retracted from between the anode 430 and the substrate Wf. As shown in FIGS. 6A to 6C, the reference position is a position where the shielding member 481 and the substrate Wf overlap in a planar view, the shielding position is a position where the shielding member 481 and the substrate Wf overlap more than that of the reference position in a planar view, and the retracted position is a position where the shielding member 481 and the substrate Wf do not overlap in a planar view. In this way, by switching the shielding member 481 between the three positions of the reference position, the shielding position, and the retracted position, the electric field shielding area is changed, and the plating film thickness at the peripheral edge of the substrate Wf is changed.

[0028] For example, the shielding mechanism 485 may be configured to switch the position of the shielding member 481 between a reference position, a shielding position, and a retracted position in accordance with the distribution of the plating film thickness at the peripheral edge of the substrate Wf measured by the film thickness sensor 490. Note that, although the present embodiment shows an example in which the shielding mechanism 485 switches the position of the shielding member 481 between three positions, the present invention is not limited to this, and the shielding mechanism 485 may also switch the position of the shielding member 481 between four or more positions. Furthermore, in this specification, "the shielding mechanism 485 switches the position of the shielding member 481 at a predetermined position" does not simply mean that the shielding member 481 passes through a predetermined position during the course of movement, but means that the shielding member 481 is stopped at the predetermined position.

[0029] 7A to 7D are plan views schematically illustrating an example of switching the position of the shielding member in accordance with the distribution of plating film thickness along the periphery of the substrate. FIGS. 7A to 7D show how the position of the shielding member is switched as the substrate Wf rotates. As shown in FIGS. 7A to 7D, as the substrate Wf rotates, the periphery of the substrate Wf gradually approaches the shielding member 481. In the example of FIG. 7 , a first plating film thickness (reference film thickness), a second plating film thickness thicker than the first plating film thickness, and a third plating film thickness thinner than the first plating film thickness are formed along the periphery of the substrate Wf, resulting in a plating film thickness variation along the periphery of the substrate Wf. The plating film thickness variation can be caused by various factors, such as uneven power supply to the contacts provided on the substrate holder 440, uneven seed thickness on the plating surface of the substrate Wf, and the pattern shape on the plating surface of the substrate Wf.

[0030] As shown in Figure 7A, the shielding mechanism 485 is configured to position the shielding member 481 at a reference position relative to a first peripheral edge Wf-b of the substrate Wf on which a first plating film thickness is to be formed. Specifically, when the first peripheral edge Wf-b of the substrate Wf approaches the shielding member 481, the shielding mechanism 485 positions the shielding member 481 at the reference position. Also, as shown in Figure 7B, the shielding mechanism 485 is configured to position the shielding member 481 at a shielding position relative to a second peripheral edge Wf-c of the substrate Wf on which a second plating film thickness is to be formed. Specifically, when the substrate Wf rotates and the second peripheral edge Wf-c of the substrate Wf approaches the shielding member 481, the shielding mechanism 485 positions the shielding member 481 at the shielding position. 7(C), when the substrate Wf further rotates and the first peripheral edge Wf-b again approaches the shielding member 481, the shielding mechanism 485 places the shielding member 481 at the reference position. Also, as shown in FIG. 7(D), the shielding mechanism 485 is configured to place the shielding member 481 at a retracted position relative to the third peripheral edge Wf-d of the substrate Wf on which the third plating film thickness is to be formed. Specifically, when the substrate Wf further rotates and the third peripheral edge Wf-d of the substrate Wf approaches the shielding member 481, the shielding mechanism 485 places the shielding member 481 at the retracted position. While FIGS. 7(A) and 7(C) show examples in which the substrate Wf held by the substrate holder 440 is rotated in one direction at a constant speed, and FIGS. 7(B) and 7(D) show examples in which the substrate Wf held by the substrate holder 440 is rotated in one direction at a constant speed, the present invention is not limited to this.

[0031] According to this embodiment, by placing the shielding member 481 in the shielding position relative to the second peripheral edge Wf-c, it is possible to suppress the formation of a plating film thickness on the second peripheral edge Wf-c, thereby allowing the plating film thickness on the second peripheral edge Wf-c to approach the reference film thickness. On the other hand, by placing the shielding member 481 in the retracted position relative to the third peripheral edge Wf-d, it is possible to promote the formation of a plating film thickness on the third peripheral edge Wf-d, thereby allowing the plating film thickness on the third peripheral edge Wf-d to approach the reference film thickness. As a result, according to this embodiment, it is possible to correct irregularities in the plating film thickness on the peripheral edge of the substrate and improve the uniformity of the plating film thickness across the entire surface to be plated.

[0032] Although the present embodiment has shown an example in which the position of the shielding member 481 is determined in accordance with the distribution of plating film thickness on the peripheral edge of the substrate Wf measured by the film thickness sensor 490, the present invention is not limited to this. That is, the plating module 400 does not need to include the film thickness sensor 490. In this case, the shielding mechanism 485 can predict that similar plating film thickness distributions will be formed on the same type of substrates Wf based on the distribution of plating film thickness on the substrates Wf obtained in advance through experiments or the like. Therefore, the shielding mechanism 485 may be configured to switch the position of the shielding member 481 between the reference position, the shielding position, and the retracted position in accordance with the distribution of plating film thickness formed on the peripheral edge of the substrate Wf.

[0033] Next, a plating method using the plating module 400 of this embodiment will be described. Fig. 8 is a flowchart of the plating method using the plating module of one embodiment.

[0034] The plating method involves placing the substrate Wf on the substrate holder 440 (step 102). Step 102 can be performed, for example, by placing the substrate Wf with the surface to be plated Wf-a facing downward on the seal ring holder 442 using a robot hand (not shown) or the like, and pressing the back surface of the substrate Wf with the back plate 444.

[0035] Next, in the plating method, the substrate holder 440 is lowered into the plating tank 410 by the lifting mechanism 443 (lowering step 104), and then the substrate holder 440 is rotated by the rotation mechanism 447 (rotation step 106).

[0036] Next, in the plating method, a voltage is applied between the anode 430 disposed in the plating tank 410 and the substrate Wf held by the substrate holder 440, thereby performing plating on the surface Wf-a to be plated (plating step 108). Note that steps 106 and 108 may be performed in reverse order or simultaneously.

[0037] Next, the plating method measures the plating film thickness at the peripheral edge of the substrate Wf using the film thickness sensor 490 (measurement step 110). Next, the plating method switches the position of the shielding member 481 between the reference position, the shielding position, and the retracted position depending on the distribution of the plating film thickness at the peripheral edge of the substrate Wf measured in the measurement step 110 (shielding step 112).

[0038] Specifically, the shielding step 112 includes a step 112-a of determining the type of peripheral portion of the substrate Wf that is close to the shielding member 481. The shielding step 112 includes a first positioning step 112-b of arranging the shielding member 481 at a reference position with respect to the first peripheral portion Wf-b when it is determined that the first peripheral portion Wf-b of the substrate Wf is close to the shielding member 481. The shielding step 112 includes a second positioning step 112-c of arranging the shielding member 481 at a shielding position with respect to the second peripheral portion Wf-c when it is determined that the second peripheral portion Wf-c of the substrate Wf is close to the shielding member 481. The shielding step 112 includes a third positioning step 112-d of positioning the shielding member 481 at a retracted position relative to the third peripheral edge Wf-d when it is determined that the third peripheral edge Wf-d of the substrate Wf is close to the shielding member 481. This makes it possible to correct irregularities in the plating film thickness at the peripheral edge of the substrate and improve the uniformity of the plating film thickness over the entire surface to be plated.

[0039] Next, the plating method determines whether or not the plating process should be terminated (step 114). If the plating method determines that the plating process should not be terminated because, for example, a predetermined time has not elapsed since the start of the plating process (No in step 114), the plating method returns to step 110 and continues the process.

[0040] On the other hand, if the plating method determines that the plating process should be terminated, for example, because a predetermined time has elapsed since the start of the plating process (Yes in step 114), the plating process is terminated by stopping the application of voltage between the anode 430 and the substrate Wf (step 116). Next, the plating method stops the rotation of the substrate holder 440 by the rotation mechanism 447 (step 118). Next, the plating method raises the substrate holder 440 by the lifting mechanism 443 (step 120). This completes the plating process.

[0041] Next, another embodiment of the plating module 400 will be described. In the above embodiment, the shielding mechanism 485 is configured to switch the shielding member 481 between the reference position, the shielding position, and the retracted position depending on the distribution of the plating film thickness at the peripheral edge of the substrate Wf. However, this is not limited to this. The shielding mechanism 485 may also be configured to switch the shielding member 481 between the reference position, the shielding position, and the retracted position depending on the type of substrate Wf held by the substrate holder 440. This point will be described below.

[0042] 9A and 9B are plan views schematically illustrating an example of switching the position of the shielding member depending on the type of substrate. Fig. 9A shows the plating film thickness distribution for three different types of substrates when plating is performed with the shielding member 481 positioned at the reference position. Fig. 9B shows the state in which the shielding member 481 is positioned at the reference position, the shielding position, and the retracted position for the three types of substrates. Fig. 9C shows the plating film thickness distribution formed on the substrate as a result of positioning the shielding member 481 as in Fig. 9B.

[0043] As shown in FIG. 9A, variations in plating film thickness can occur around the periphery of the substrate due to various factors, such as uneven seed thickness on the plating surface of the substrate Wf and the pattern shape on the plating surface of the substrate Wf. For example, as shown in the upper part of FIG. 9A, assume that a plating process is performed with the shielding member 481 positioned at a reference position, resulting in a uniform plating film thickness distribution across the entire substrate. In this case, the shielding mechanism 485 positions the shielding member 481 at a reference position for the same type of substrate, as shown in the upper part of FIG. 9B. As a result, a uniform plating film thickness is achieved across the entire plating surface, as shown in the upper part of FIG. 9C.

[0044] On the other hand, for example, suppose that a plating process is performed with the shielding member 481 positioned at the reference position, resulting in a thicker plating film thickness at the peripheral edge of the substrate than at the center, as shown in the middle of Fig. 9(A). In this case, the shielding mechanism 485 positions the shielding member 481 at the shielding position for the same type of substrate, as shown in the middle of Fig. 9(B). As a result, it is possible to suppress the formation of a plating film thickness at the peripheral edge of the substrate Wf, thereby improving the uniformity of the plating film thickness over the entire surface to be plated, as shown in the middle of Fig. 9(C).

[0045] Furthermore, for example, as shown in the lower part of FIG. 9A , suppose that a plating process is performed with the shielding member 481 positioned at the reference position, resulting in a thinner plating film thickness at the periphery of the substrate compared to the central portion. In this case, the shielding mechanism 485 positions the shielding member 481 at the retracted position for the same type of substrate, as shown in the lower part of FIG. 9B . As a result, the formation of a plating film thickness at the periphery of the substrate Wf can be promoted, thereby improving the uniformity of the plating film thickness across the entire surface to be plated, as shown in the lower part of FIG. 9C . As described above, according to this embodiment, it is possible to correct the irregularities in the plating film thickness at the periphery of the substrate and improve the uniformity of the plating film thickness across the entire surface to be plated.

[0046] Next, a plating method using the plating module 400 of this embodiment will be described. Fig. 10 is a flowchart of the plating method using the plating module of one embodiment.

[0047] The plating method determines the type of substrate held by the substrate holder 440 (determination step 201). The determination step 201 can determine the type of substrate based on, for example, the distribution of plating film thicknesses of substrates Wf of the same type previously obtained through experiments or the like. Subsequently, the plating method places the substrate Wf on the substrate holder 440 (step 202). Step 202 can be performed, for example, by placing the substrate Wf with its plating surface Wf-a facing downward on the seal ring holder 442 using a robot hand (not shown) or the like, and pressing the back surface of the substrate Wf with the back plate 444.

[0048] Next, in the plating method, the substrate holder 440 is lowered into the plating tank 410 by the lifting mechanism 443 (lowering step 204), and then the substrate holder 440 is rotated by the rotation mechanism 447 (rotation step 206).

[0049] Next, in the plating method, a voltage is applied between the anode 430 disposed in the plating tank 410 and the substrate Wf held by the substrate holder 440, thereby plating the surface Wf-a to be plated (plating step 208).

[0050] Next, the plating method involves switching the position of the shielding member 481 between the reference position, the shielding position, and the retracted position (shielding step 210) depending on the type of substrate determined in determination step 201. Specifically, as described with reference to FIGS. 9A and 9B, the shielding step switches the position of the shielding member 481 between the reference position, the shielding position, and the retracted position depending on whether the plating thickness formed on the peripheral edge of the substrate is the same as, thicker than, or thinner than that of the central portion. This allows for correcting variations in the plating thickness on the peripheral edge of the substrate and improving the uniformity of the plating thickness across the entire surface to be plated, as shown in FIG. 9C. Note that steps 206, 208, and 210 may be performed in reverse order or simultaneously.

[0051] Next, the plating method determines whether or not the plating process should be terminated (step 212). If the plating method determines that the plating process should not be terminated because, for example, a predetermined time has not elapsed since the start of the plating process (step 212, No), the plating method returns to step 212 and continues the process.

[0052] On the other hand, if the plating method determines that the plating process should be terminated, for example, because a predetermined time has elapsed since the start of the plating process (Yes in step 212), the plating process is terminated by stopping the application of voltage between the anode 430 and the substrate Wf (step 214). Next, the plating method stops the rotation of the substrate holder 440 by the rotation mechanism 447 (step 216). Next, the plating method raises the substrate holder 440 by the lifting mechanism 443 (step 218). This completes the plating process.

[0053] Next, another aspect of the plating apparatus 1000 of this embodiment will be described. In the above embodiment, the resistor 450 included in the plating apparatus 1000 has a circular plate member with a large number of holes formed at equal intervals along the circumferential direction of the plate member. However, this is not limited to this. This point will be described below.

[0054] FIG. 11 is a plan view showing multiple regions included in a resistor according to one embodiment. The resistor 450 is configured by forming multiple holes 452 in a disk member 451. While FIG. 11 illustrates only a portion of the multiple holes 452 in the disk member 451, the holes 452 are actually formed throughout the entirety within a dashed line 455. The dashed line 455 indicates the substrate surface to be plated. The region through which metal ions pass (ion permeation region) of the resistor is set to be approximately the same as or slightly smaller than the substrate surface to be plated. The shielding region by the resistor refers to the region excluding the opening 454 (region S5), which will be described later. This configuration allows the resistor 450 to function properly relative to the substrate surface to be plated, enabling fine adjustment of the flow of plating solution and the metal plating distribution on the substrate. Although multiple holes 452 are formed in the disk member 451, there are portions in which the holes 452 are formed non-uniformly along the circumferential direction of the disk member 451. More specifically, as shown in FIG. 11 , the resistor 450 has a dynamic shielding area DA where the resistor 450 and the shielding member 481 overlap when the shielding member 481 is positioned in the shielding position. The resistor 450 includes a first area S1 having a first shielding rate within the dynamic shielding area DA. The first shielding rate is the rate at which the resistor 450 blocks the penetration of metal ions in the area S1, and is calculated as follows: first shielding rate = 1 - total area of ​​holes in the area S1 / area of ​​the area S1. The same applies to the shielding rates of other areas described below. Note that each total area is calculated using the hole in the adjacent area as the boundary. The first area S1 has an area that is less than 0.35% of the total area of ​​the resistor 450 facing the substrate held by the substrate holder 440.

[0055] The resistor 450 also includes a second region S2, which is disposed inside the dynamic shading region DA and spaced apart from the first region S1, and which has a second shading ratio greater than the first shading ratio. The resistor 450 also includes a third region S3, which is disposed between the first region S1 and the second region S2 in the dynamic shading region DA and has a third shading ratio greater than the first shading ratio and less than the second shading ratio. The first region S1, the second region S2, and the third region S3 are disposed within the dynamic shading region DA, thereby dynamically changing the shading ratio within the dynamic shading region DA. The third region S3 extends circumferentially beyond the dynamic shading region DA and has a uniform third shading ratio throughout the extended region. In this embodiment, the third region S3 extends around the entire circumference at a predetermined radial position (the 43rd row) of the resistor 450 and has a uniform third shielding rate around the entire circumference. Note that the first region S1 is a region that has a local shielding rate around the entire circumference at the periphery of the shielding region of the resistor 450, and therefore in this specification, the first region S1 is referred to as a "local shielding region."

[0056] The resistor 450 further includes a fourth region S4, which is disposed inside the second region S2 and in another circumferential portion of the second region S2 and has a fourth shielding ratio smaller than the second shielding ratio. The resistor 450 further includes a fifth region S5, which is disposed in another circumferential portion of the first region S1 (specifically, a portion shifted 90 degrees from the first region S1) and has an opening 454 larger than the hole 452. The shielding ratio of the fifth region S5 is 0, and the shielded regions of the resistor refer to specific regions (first region, second region, third region, fourth region, and sixth region), which are characterized by different shielding ratios when the substrate is in different azimuthal positions. The resistor 450 further includes a sixth region S6, which is disposed in another circumferential portion of the first region S1 and the fifth region S5 and has a sixth shielding ratio larger than the first shielding ratio.

[0057] In one aspect of the example shown in Figure 11, the fourth region S4 is arranged from the center (row 0) of the disc member around the entire circumference of the 40th row and parts of the 41st and 42nd rows, resulting in a fourth shielding rate of 72%. The second region S2 is arranged in parts of the 41st and 42nd rows, resulting in a second shielding rate of 84%. The third region S3 is arranged in the 43rd row, resulting in a third shielding rate of 66%. The first region S1 is arranged in parts of the 44th and 45th rows, resulting in a first shielding rate of 48%. The sixth region S6 is arranged in part of the 44th row, resulting in a sixth shielding rate of 86%.

[0058] In another aspect of the example shown in Figure 11, the fourth region S4 is arranged around the entire circumference from the center (row 0) of the disc member to the 40th row and in part of the 41st row, resulting in a fourth shielding rate of 72%. The second region S2 is arranged in part of the 41st row, resulting in a second shielding rate of 86%. The third region S3 is arranged in the 42nd and 43rd rows, resulting in a third shielding rate of 72% for the 42nd row and 66% for the 43rd row. The first region S1 is arranged in part of the 44th and 45th rows, resulting in a first shielding rate of 48%. The sixth region S6 is arranged in part of the 44th row, resulting in a sixth shielding rate of 86%.

[0059] 12 is a diagram showing an example of plating thickness when the position of the shielding member is adjusted according to the distribution of plating thickness around the periphery of the substrate. As shown in the upper part of FIG. 12, the shielding mechanism 485 positions the shielding member 481 at a shielding position for the thick plating thickness area around the periphery of the substrate. This suppresses the formation of plating thickness in that area, allowing the plating thickness in that area to approach the reference thickness (normal thickness).

[0060] 12, the shielding mechanism 485 positions the shielding member 481 at a reference position for portions of the peripheral edge of the substrate where the plating film thickness is normal. This allows the formation of the plating film thickness in those portions to be maintained at the normal film thickness. Also, as shown in the bottom part of FIG. 12, the shielding mechanism 485 positions the shielding member 481 at a retracted position for portions of the peripheral edge of the substrate where the plating film thickness is thin. This promotes the formation of the plating film thickness in those portions, allowing the plating film thickness in those portions to approach the reference film thickness (normal film thickness).

[0061] According to this embodiment, the resistor 450 has a third region S3 extending circumferentially beyond the dynamic shielding region DA, and the extended region has a uniform third shielding ratio. Therefore, the resistor 450 of this embodiment has advantages over prior art resistors. Specifically, the shielding member 481 is positioned at a reference position that exposes the 42nd row of the resistor 450 relative to areas with a normal plating thickness, and plating is performed thereon. In prior art resistors, the shielding ratio of the 41st to 43rd rows is higher than the shielding ratio of the other rows in the circumferential direction, so the plating thickness tends to be thinner. On the other hand, the 43rd row (or the 42nd and 43rd rows) of the resistor 450 of this embodiment has the same shielding ratio as the other rows in the circumferential direction, and the holes are uniformly arranged. This mitigates the influence of the current density distribution of the 41st and 42nd rows (or the 41st row), which have different shielding ratios in the circumferential direction, and reduces the influence on the thickness uniformity or coplanarity relative to areas with a normal thickness. As a result, according to this embodiment, when the shielding member 481 is placed at the reference position, the plating film thickness at the peripheral edge of the substrate can be maintained at the normal film thickness.

[0062] In one aspect of the example shown in Figure 11, the fourth region S4 is arranged from the center (row 0) of the disc member to the 42nd row, and the fourth shielding rate is 72%. The third region S3 is arranged in the 43rd row, and the third shielding rate is 66%. The fifth region S5 is arranged in the 44th row and part of the 45th row. Since the fifth region S5 has an opening 454 larger than the hole, the shielding rate is 0%. The sixth region S6 is arranged in part of the 44th row, and the sixth shielding rate is 86%.

[0063] In the above embodiment, the third region S3 extends around the entire circumference of the disk member 451 as shown in Fig. 11, but is not limited to this. Fig. 13 is a plan view showing multiple regions included in a resistor according to one embodiment.

[0064] Similar to the above embodiment, the resistor 450 includes, in a dynamic shading area DA, a first region S1 having a first shielding ratio, and a second region S2 disposed inside and spaced apart from the first region S1 and having a second shielding ratio greater than the first shielding ratio. The resistor 450 also includes, in the dynamic shading area DA, a third region S3 disposed between the first region S1 and the second region S2 and having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio. The third region S3 extends circumferentially beyond the dynamic shading area DA and has a uniform third shielding ratio throughout the extended region.

[0065] 13 , the third region S3 does not extend around the entire circumference of the disk member 451. That is, in this embodiment, the fifth region S5 is disposed in other circumferential portions of the third region S3 as well as in other circumferential portions of the first region S1. In other words, the fifth region S5 extends not only to the 44th and 45th rows of the resistor element 450 but also to the 43rd row. As a result, the fifth region S5 is present in part of the 43rd row of the resistor element 450, but the third region S3 extends along the circumferential direction of the resistor element 450 for most of the 43rd row.

[0066] The resistor 450 also includes a fourth region S6, which is located inside the second region S2 and in other circumferential portions of the second region S2 and has a fourth shielding ratio smaller than the second shielding ratio and equal to the third shielding ratio, and a sixth region S6, which is located in other circumferential portions of the first region S1 and the fifth region S5 and has a sixth shielding ratio greater than the first shielding ratio. In the example shown in Figure 13, the fourth region S4 is located around the entire periphery of the 40th row from the center (row 0) of the circular plate member and in parts of the 41st and 42nd rows, and has a fourth shielding ratio of 72%. The second region S2 is located in parts of the 41st and 42nd rows, and has a second shielding ratio of 84%. The third region S3 is located in the 43rd row and has a third shielding ratio of 72%, which is the same as the fourth shielding ratio. This example differs from the above examples in that it is located in the 43rd row. The first region S1 is located in a portion of the 44th and 45th rows, and the first shielding ratio is 48%. The sixth region S6 is located in a portion of the 44th row, and the sixth shielding ratio is 86%.

[0067] According to this embodiment, the third region S3 having a uniform shielding rate extends along the circumferential direction of the resistor 450 over most of the 43rd row of the resistor 450. Therefore, the resistor 450 of this embodiment has advantages over prior art resistors. Specifically, the shielding member 481 is positioned at a reference position that exposes the 42nd row of the resistor 450 relative to areas with a normal plating thickness, and plating is performed thereon. In prior art resistors, the shielding rate of the 41st to 43rd rows is higher than the shielding rate in the other circumferential directions, resulting in a tendency for the plating thickness to be thinner. In contrast, most of the 43rd row of the resistor 450 of this embodiment is uniformly arranged with the same shielding rate as the other rows. This mitigates the influence of the current density distribution in the 41st and 42nd rows, which have different shielding rates in the other circumferential directions, and reduces the influence on the film thickness uniformity or coplanarity relative to areas with a normal film thickness. As a result, according to this embodiment, the plating thickness at the periphery of the substrate can be maintained at a normal thickness when the shielding member 481 is positioned at the reference position.

[0068] Next, a description will be given of another aspect of the plating apparatus 1000 of this embodiment. Fig. 14 is a plan view schematically showing an example in which the position of the shielding member is changed depending on the distribution of the plating film thickness at the peripheral edge of the substrate.

[0069] In the above embodiment, an example was shown in which the shielding mechanism 485 was configured to switch the shielding member 481 between the reference position, the shielding position, and the retracted position, but this is not limiting. The shielding mechanism 485 may be configured to switch the shielding member 481 between the shielding position between the anode 430 and the substrate Wf and a retracted position retracted from between the anode 430 and the substrate Wf. Figure 14 shows an example in which the shielding mechanism 485 switches the shielding member 481 between the shielding position and the retracted position. Figure 14 also shows the switching of the shielding member position when the resistor 450 has multiple holes formed at equal intervals along the circumferential direction of the disk member.

[0070] Furthermore, in the above embodiment, an example was described in which the rotation mechanism 447 rotates the substrate holder 440 in one direction at a constant speed, but this is not limiting. The rotation mechanism 447 may be configured to rotate the substrate holder 440 so that a first portion Wf-e at a selected azimuthal position of the substrate Wf is located in a dynamic shielding area DA defined by the resistor 450 and the shielding member 481 for a different period of time than a second portion Wf-f of the substrate that is located at a different azimuthal position from the first portion and has the same arc length and radial position as the first portion. The dynamic shielding area DA is an area in which the shielding rate changes when the first portion Wf-e of the substrate stays in the dynamic shielding area DA compared to when the second portion Wf-f of the substrate stays in the dynamic shielding area DA.

[0071] 14 , when the first portion Wf-e of the substrate includes a portion having a thicker plating film thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to place the shielding member 481 in the shielding position when the first portion Wf-e of the substrate is located in the dynamic shielding area DA. Also, the shielding mechanism 485 is configured to place the shielding member 481 in the retracted position when the second portion Wf-f of the substrate is located in the dynamic shielding area DA.

[0072] In addition, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e (portion with a thick film thickness) of the substrate Wf is positioned in the dynamic shielding area DA for a longer period of time than the second portion Wf-f (portion with a normal film thickness).

[0073] 15 is a diagram showing the relationship between the timing of shielding the first portion Wf-e of the substrate and the rotational speed of the substrate holder. The horizontal axis of the graph in FIG. 15 represents the rotational position of the first portion Wf-e of the substrate Wf, and the vertical axis represents the position of the shielding member (shielding position or retracted position) and the rotational speed (rotation direction) of the substrate holder 440. In this example, as shown in FIG. 15, when a specific position of the substrate (e.g., a notch in the substrate) is set as the reference (θ=0), the first portion Wf-e, for which it is desired to suppress the plating deposition rate, is located in the peripheral portion within the range from θ=θ1 to θ=θ2.

[0074] 15 shows the position of the shielding member and the rotational speed of the substrate holder when additional suppression of the plating deposition rate on the first portion Wf-e of the substrate Wf is performed once (the rotational direction of the substrate holder is switched twice). As shown in FIG. 15 , the rotation mechanism 447 first rotates the substrate holder 440 at a predetermined speed in the first direction, as indicated by arrow A in FIG. 15 . Next, the shielding mechanism 485 pushes the shielding member 481 to the shielding position when the θ1 position of the substrate Wf is at the center of the shielding member 481. Next, the rotation mechanism 447 switches the rotational direction of the substrate holder 440 to rotate it in the second direction when the θ2 position of the substrate Wf is at the center of the shielding member 481. Next, the rotation mechanism 447 switches the rotational direction of the substrate holder 440 to rotate it in the first direction when the θ1 position of the substrate Wf is at the center of the shielding member 481.

[0075] The rotation mechanism 447 switches the rotation direction of the substrate holder 440 (rotates the substrate holder 440 back and forth) while the shielding member 481 is located at the shielding position, thereby allowing the shielding member 481 to be located at the shielding position for a period approximately three times longer than when the substrate holder 440 is rotated at a constant speed in the first direction, as shown in Fig. 15. Therefore, according to this embodiment, it is possible to strongly suppress the formation of a plating film thickness on the first portion Wf-e of the substrate Wf.

[0076] Although the present embodiment has shown an example in which the rotation direction of the substrate holder 440 is reversed (the substrate holder 440 is rotated back and forth) when the first portion Wf-e of the substrate is located in the dynamic shielding area DA, the present invention is not limited to this. The rotation mechanism may be configured to position the first portion Wf-e of the substrate in a temporal dynamic shielding area DA that is different from the temporal dynamic shielding area DA of the second portion Wf-f of the substrate by increasing (speeding up) or decreasing (slowing down) the rotation speed of the substrate holder 440 when the first portion Wf-e of the substrate is located in the dynamic shielding area DA.

[0077] Fig. 16 is a plan view schematically illustrating an example in which the position of the shielding member is switched in accordance with the distribution of plating film thickness along the periphery of the substrate. Fig. 16 shows an example in which the shielding mechanism 485 switches the position of the shielding member 481 between the reference position and the shielding position. Fig. 16 also illustrates switching of the position of the shielding member when multiple holes in the resistor 450 are formed at equal intervals along the circumferential direction of the disk member.

[0078] 16 , when the first portion Wf-e of the substrate includes a portion having a thicker plating film thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to place the shielding member 481 in the shielding position when the first portion Wf-e of the substrate is located in the dynamic shielding area DA. Also, the shielding mechanism 485 is configured to place the shielding member 481 in the reference position when the second portion Wf-f of the substrate is located in the dynamic shielding area DA.

[0079] 15, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e of the substrate Wf is positioned in the dynamic shielding area DA for a longer period of time than the second portion Wf-f by switching the rotation direction of the substrate holder 440. Therefore, according to this embodiment, it is possible to strongly suppress the formation of a plating film thickness on the first portion Wf-e of the substrate Wf.

[0080] Fig. 17 is a plan view schematically illustrating an example in which the position of the shielding member is switched depending on the distribution of the plating film thickness around the periphery of the substrate. Fig. 17 shows an example in which the shielding mechanism 485 switches the shielding member 481 between the retracted position and the shielding position. Fig. 17 also illustrates the switching of the position of the shielding member when the resistor 450 has multiple holes formed non-uniformly around the circumference of the disk member, as in the embodiment shown in Figs. 11 to 13.

[0081] 17 , when the first portion Wf-e of the substrate includes a portion having a thicker plating film thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to place the shielding member 481 in the shielding position when the first portion Wf-e of the substrate is located in the dynamic shielding area DA. Also, the shielding mechanism 485 is configured to place the shielding member 481 in the retracted position when the second portion Wf-f of the substrate is located in the dynamic shielding area DA.

[0082] 15, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e (portion with a thicker film thickness) of the substrate Wf is positioned in the dynamic shielding area DA for a longer period of time than the second portion Wf-f (portion with a normal film thickness). Therefore, according to this embodiment, it is possible to strongly suppress the formation of a plating film thickness on the first portion Wf-e of the substrate Wf.

[0083] Fig. 18 is a plan view schematically illustrating an example in which the position of the shielding member is switched in accordance with the distribution of plating film thickness along the periphery of the substrate. Fig. 18 illustrates an example in which the shielding mechanism 485 switches the position of the shielding member 481 between the reference position and the shielding position. Fig. 18 also illustrates switching the position of the shielding member when the resistor 450 has multiple holes formed non-uniformly along the circumferential direction of the disk member, as in the embodiments shown in Figs. 11 to 13.

[0084] 18 , when the first portion Wf-e of the substrate includes a portion having a thicker plating film thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to place the shielding member 481 in the shielding position when the first portion Wf-e of the substrate is located in the dynamic shielding area DA. Also, the shielding mechanism 485 is configured to place the shielding member 481 in the reference position when the second portion Wf-f of the substrate is located in the dynamic shielding area DA.

[0085] 15, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e (portion with a thicker film thickness) of the substrate Wf is positioned in the dynamic shielding area DA for a longer period of time than the second portion Wf-f (portion with a normal film thickness). Therefore, according to this embodiment, it is possible to strongly suppress the formation of a plating film thickness on the first portion Wf-e of the substrate Wf.

[0086] Fig. 19 is a plan view schematically illustrating an example in which the position of the shielding member is switched in accordance with the distribution of the plating film thickness at the peripheral edge of the substrate. Fig. 19 illustrates an example in which the shielding mechanism 485 switches the shielding member 481 between the shielding position and the retracted position. Fig. 19 also illustrates the switching of the position of the shielding member when the resistor 450 has multiple holes formed non-uniformly along the circumferential direction of the disk member, as in the embodiment shown in Figs. 11 to 13.

[0087] 19 , when the first portion Wf-e of the substrate includes a portion having a thinner plating film thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to place the shielding member 481 in the retracted position when the first portion Wf-e of the substrate is located in the dynamic shielding area DA. The shielding mechanism 485 is also configured to place the shielding member 481 in the shielding position when the second portion Wf-f of the substrate is located in the dynamic shielding area DA.

[0088] 15, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e of the substrate Wf (a portion with a thin film thickness) is positioned in the dynamic shielding area DA for a longer period of time than the second portion Wf-f (a portion with a normal film thickness). Therefore, according to this embodiment, it is possible to strongly promote the formation of a plating film thickness in the first portion Wf-e of the substrate Wf.

[0089] Fig. 20 is a plan view schematically illustrating an example in which the position of the shielding member is switched in accordance with the distribution of plating film thickness along the periphery of the substrate. Fig. 20 illustrates an example in which the shielding mechanism 485 switches the position of the shielding member 481 between the reference position, the shielding position, and the retracted position. Fig. 20 also illustrates the switching of the position of the shielding member when the resistor 450 has multiple holes formed non-uniformly along the circumferential direction of the disk member, as in the embodiment illustrated in Figs. 11 to 13.

[0090] 20 , when the first portion Wf-e1 of the substrate includes a portion with a thicker plating film thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to place the shielding member 481 in the shielding position when the first portion Wf-e1 of the substrate is located in the dynamic shielding area DA. Also, when the first portion Wf-e2 of the substrate includes a portion with a thinner plating film thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to place the shielding member 481 in the retracted position when the first portion Wf-e2 of the substrate is located in the dynamic shielding area DA. Also, the shielding mechanism 485 is configured to place the shielding member 481 in the reference position when the second portion Wf-f of the substrate is located in the dynamic shielding area DA.

[0091] 15, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portions Wf-e1 (thick film thickness portions) and e2 (thin film thickness portions) of the substrate Wf are positioned in the dynamic shielding area DA for a longer period of time than the second portion Wf-f (normal film thickness portion). Therefore, according to this embodiment, it is possible to strongly suppress the formation of a plating film thickness on the first portion Wf-e1 of the substrate Wf and strongly promote the formation of a plating film thickness on the first portion Wf-e2 of the substrate Wf.

[0092] Although several embodiments of the present invention have been described above, the above-described embodiments of the present invention are intended to facilitate understanding of the present invention and are not intended to limit the present invention. The present invention may be modified or improved without departing from the spirit thereof, and the present invention naturally includes equivalents thereof. Furthermore, any combination or omission of the components described in the claims and specification is possible within the scope of solving at least part of the above-described problems or achieving at least part of the effects.

[0093] In one embodiment, the present application discloses a plating apparatus including: a plating tank configured to contain a plating solution; an anode disposed in the plating tank; a substrate holder configured to hold a substrate with its surface to be plated facing downward; a lifting mechanism configured to raise and lower the substrate holder; a rotation mechanism configured to rotate the substrate holder; a shielding member capable of shielding an electric field formed between the anode and the substrate; and a shielding mechanism configured to switchably position the shielding member among a reference position between the anode and the substrate, a shielding position where the electric field shielding area is larger than that of the reference position, and a retracted position where the shielding member is retracted from between the anode and the substrate.

[0094] In addition, as one embodiment, the present application discloses a plating apparatus in which the shielding mechanism is configured to switch the position of the shielding member between the reference position, the shielding position, and the retracted position depending on the distribution of the plating film thickness formed on the peripheral portion of the substrate.

[0095] In addition, the present application discloses, as one embodiment, a plating apparatus further including a film thickness sensor configured to measure the plating film thickness on the peripheral edge of the substrate, and the shielding mechanism configured to switch and position the shielding member among the reference position, the shielding position, and the retracted position depending on the distribution of the plating film thickness on the peripheral edge of the substrate measured by the film thickness sensor.

[0096] The present application also discloses, as one embodiment, a plating apparatus in which the shielding mechanism is configured to position the shielding member at the reference position with respect to a first peripheral portion of the substrate where a first plating film thickness is formed, to position the shielding member at the shielding position with respect to a second peripheral portion of the substrate where a second plating film thickness thicker than the first plating film thickness is formed, and to position the shielding member at the retracted position with respect to a third peripheral portion of the substrate where a third plating film thickness thinner than the first plating film thickness is formed.

[0097] Furthermore, as one embodiment, the present application discloses a plating apparatus in which the shielding mechanism is configured to switch the shielding member between the reference position, the shielding position, and the retracted position depending on the type of substrate held by the substrate holder.

[0098] Furthermore, the present application discloses, as one embodiment, a plating method including: a lowering step of lowering into a plating tank a substrate holder that holds a substrate with its surface to be plated facing downward; a rotating step of rotating the substrate holder; a plating step of applying a plating process to the surface to be plated of the substrate that has been lowered into the plating tank; and a shielding step of switching and positioning a shielding member that can shield an electric field formed between an anode placed in the plating tank and the substrate among a reference position between the anode and the substrate, a shielding position where the electric field shielding area is larger than the reference position, and a retracted position where the shielding member is retracted from between the anode and the substrate.

[0099] In addition, as one embodiment, the present application discloses a plating method in which the shielding step is configured to switch the shielding member between the reference position, the shielding position, and the retracted position depending on the distribution of the plating film thickness formed on the peripheral portion of the substrate.

[0100] In addition, as one embodiment, the present application discloses a plating method further including a measurement step of measuring the plating film thickness on the peripheral edge of the substrate, and the shielding step is configured to switch and position the shielding member among the reference position, the shielding position, and the retracted position depending on the distribution of the plating film thickness on the peripheral edge of the substrate measured by the measurement step.

[0101] Furthermore, the present application discloses, as one embodiment, a plating method in which the shielding step includes a first positioning step of positioning the shielding member at the reference position with respect to a first peripheral portion of the substrate where a first plating film thickness is to be formed, a second positioning step of positioning the shielding member at the shielding position with respect to a second peripheral portion of the substrate where a second plating film thickness thicker than the first plating film thickness is to be formed, and a third positioning step of positioning the shielding member at the retracted position with respect to a third peripheral portion of the substrate where a third plating film thickness thinner than the first plating film thickness is to be formed.

[0102] In addition, as one embodiment, the present application discloses a plating method further including a determination step of determining the type of substrate held by the substrate holder, and the shielding step is configured to switch and position the shielding member among the reference position, the shielding position, and the retracted position depending on the type of substrate determined in the determination step.

[0103] In one embodiment, the present application provides a plating tank configured to contain a plating solution, an anode disposed in the plating tank, a substrate holder configured to hold a substrate with its surface to be plated facing downward, a resistor disposed between the anode and the substrate holder and having a local shielding region, a lifting mechanism configured to lift and lower the substrate holder, a rotation mechanism configured to rotate the substrate holder, a shielding member capable of shielding an electric field formed between the anode and the substrate, and a shielding member for connecting the shielding member to the anode and the substrate. and a shielding mechanism configured to be positioned between a shielding position between the anode and the substrate and a retracted position retracted from between the anode and the substrate, wherein the rotation mechanism is configured to rotate the substrate holder so that a first portion of the substrate at a selected azimuthal position is positioned in a dynamic shielding region where the resistor and the shielding member overlap when the shielding member is positioned at the shielding position, for a different time than a second portion of the substrate at a different azimuthal position from the first portion and having the same arc length and radial position as the first portion.

[0104] The present application also discloses, as one embodiment, a plating apparatus in which the rotation mechanism is configured to position the first portion of the substrate in the dynamic shielding area for a different time than the second portion of the substrate by increasing or decreasing the rotation speed of the substrate holder or reversing the rotation direction of the substrate holder when the first portion of the substrate is located in the dynamic shielding area.

[0105] The present application also discloses, as one embodiment, a plating apparatus in which the first portion of the substrate includes a portion having a thicker or thinner plating film thickness than the second portion of the substrate.

[0106] Furthermore, as one embodiment, the present application discloses a plating apparatus in which, when a first portion of the substrate includes a portion having a thicker plating film thickness than the second portion of the substrate, the shielding mechanism is configured to position the shielding member at the shielding position when the first portion of the substrate is located in the dynamic shielding area.

[0107] Furthermore, as one embodiment, the present application discloses a plating apparatus in which, when a first portion of the substrate includes a portion having a thinner plating film thickness than the second portion of the substrate, the shielding mechanism is configured to position the shielding member in the retracted position when the first portion of the substrate is located in the dynamic shielding area.

[0108] The present application also discloses, as one embodiment, a plating apparatus in which the dynamic shielding region has a shielding rate that changes when a first portion of the substrate stays in the dynamic shielding region compared to when a second portion of the substrate stays in the dynamic shielding region.

[0109] Furthermore, as one embodiment, the present application provides a plating tank configured to contain a plating solution, an anode disposed in the plating tank, a substrate holder configured to hold a substrate with its surface to be plated facing downward, a resistor disposed between the anode and the substrate holder and having a plurality of holes penetrating the anode side and the substrate holder side, a lifting mechanism configured to lift and lower the substrate holder, a rotation mechanism configured to rotate the substrate holder, a shielding member capable of shielding an electric field formed between the anode and the substrate, and a shielding mechanism configured to position the shielding member between a shielding position between the anode and the substrate and a retracted position retracted from between the anode and the substrate, wherein the resistor is a first region having a first shielding ratio, a second region being disposed inside and spaced apart from the first region and having a second shielding ratio greater than the first shielding ratio, and a third region being disposed between the first region and the second region and having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio, wherein the third region extends circumferentially beyond the dynamic shielding region and has the third shielding ratio uniformly in the extended region; and the resistor is disposed inside the second region and in other circumferential portions of the second region and includes a fourth region having a fourth shielding ratio smaller than the second shielding ratio and the same as the third shielding ratio.

[0110] The present application also discloses, as one embodiment, a plating apparatus in which the resistor further includes a fifth region that is arranged in another circumferential portion of the first region and another circumferential portion of the third region and has an opening that is larger than the hole.

[0111] The present application also discloses, as one embodiment, a plating apparatus in which the resistor further includes a sixth region arranged in another circumferential portion of the first region and the fifth region and having a sixth shielding ratio greater than the first shielding ratio.

[0112] Furthermore, the present application discloses, as one embodiment, a plating apparatus, wherein the first region has an area that is less than 0.35% of the total area of ​​the resistor that faces the substrate held by the substrate holder.

[0113] 400 Plating module 410 Plating tank 430 Anode 440 Substrate holder 443 Elevating mechanism 447 Rotating mechanism 450 Resistor 452 Hole 454 Opening 481 Shielding member 485 Shielding mechanism 490 Film thickness sensor 1000 Plating device Wf Substrate Wf-a Surface to be plated Wf-b First peripheral portion Wf-c Second peripheral portion Wf-d Third peripheral portion Wf-e First portion Wf-f Second portion DA Dynamic shielding region S1 First region S2 Second region S3 Third region S4 Fourth region S5 Fifth region S6 Sixth region

Claims

1. A plating apparatus comprising: a plating tank configured to contain a plating solution; an anode disposed in the plating tank; a substrate holder configured to hold a substrate with its surface to be plated facing downward; a lifting mechanism configured to raise and lower the substrate holder; a rotation mechanism configured to rotate the substrate holder; a shielding member capable of shielding an electric field formed between the anode and the substrate; and a shielding mechanism configured to switchably position the shielding member among a reference position between the anode and the substrate, a shielding position where the electric field shielding area is larger than that of the reference position, and a retracted position where the shielding member is retracted from between the anode and the substrate.

2. The plating apparatus according to claim 1, wherein the shielding mechanism is configured to switch the position of the shielding member between the reference position, the shielding position, and the retracted position in accordance with the distribution of the plating film thickness formed on the peripheral edge of the substrate.

3. The plating apparatus according to claim 1, further comprising a film thickness sensor configured to measure the plating film thickness on the peripheral edge of the substrate, and the shielding mechanism configured to switch the position of the shielding member among the reference position, the shielding position, and the retracted position according to the distribution of the plating film thickness on the peripheral edge of the substrate measured by the film thickness sensor.

4. The plating apparatus of claim 2 or 3, wherein the shielding mechanism is configured to position the shielding member at the reference position relative to a first peripheral portion of the substrate where a first plating film thickness is formed, to position the shielding member at the shielding position relative to a second peripheral portion of the substrate where a second plating film thickness thicker than the first plating film thickness is formed, and to position the shielding member at the retracted position relative to a third peripheral portion of the substrate where a third plating film thickness thinner than the first plating film thickness is formed.

5. The plating apparatus according to claim 1, wherein the shielding mechanism is configured to switch the shielding member between the reference position, the shielding position, and the retracted position depending on the type of substrate held by the substrate holder.

6. A plating method comprising: a lowering step of lowering into a plating tank a substrate holder that holds a substrate with its surface to be plated facing downward; a rotating step of rotating the substrate holder; a plating step of plating the surface to be plated of the substrate that has been lowered into the plating tank; and a shielding step of switching the position of a shielding member that can shield an electric field formed between an anode placed in the plating tank and the substrate among a reference position between the anode and the substrate, a shielding position where the electric field shielding area is larger than the reference position, and a retracted position where the shielding member is retracted from between the anode and the substrate.

7. The plating method according to claim 6, wherein the shielding step is configured to switch the position of the shielding member between the reference position, the shielding position, and the retracted position depending on the distribution of the plating film thickness formed on the peripheral edge of the substrate.

8. The plating method according to claim 6, further comprising a measurement step of measuring the plating film thickness on the peripheral edge of the substrate, wherein the shielding step is configured to switch the position of the shielding member among the reference position, the shielding position, and the retracted position depending on the distribution of the plating film thickness on the peripheral edge of the substrate measured by the measurement step.

9. The plating method according to claim 7 or 8, wherein the shielding step includes a first positioning step of positioning the shielding member at the reference position relative to a first peripheral portion of the substrate where a first plating film thickness is to be formed, a second positioning step of positioning the shielding member at the shielding position relative to a second peripheral portion of the substrate where a second plating film thickness thicker than the first plating film thickness is to be formed, and a third positioning step of positioning the shielding member at the retracted position relative to a third peripheral portion of the substrate where a third plating film thickness thinner than the first plating film thickness is to be formed.

10. The plating method according to claim 6, further comprising a determination step of determining the type of substrate held by the substrate holder, wherein the shielding step is configured to switch the position of the shielding member between the reference position, the shielding position, and the retracted position depending on the type of substrate determined in the determination step.

11. A plating apparatus comprising: a plating tank configured to contain a plating solution; an anode disposed in the plating tank; a substrate holder configured to hold a substrate with its surface to be plated facing downward; a resistor disposed between the anode and the substrate holder and having a local shielding area; a lifting mechanism configured to raise and lower the substrate holder; a rotation mechanism configured to rotate the substrate holder; a shielding member capable of shielding an electric field formed between the anode and the substrate; and a shielding mechanism configured to position the shielding member between a shielding position between the anode and the substrate and a retracted position retracted from between the anode and the substrate, wherein the rotation mechanism is configured to rotate the substrate holder so that a first portion of the substrate at a selected azimuthal position is located in a dynamic shielding area where the resistor and the shielding member overlap when the shielding member is disposed at the shielding position, for a different time than a second portion of the substrate at a different azimuthal position from the first portion and having the same arc length and radial position as the first portion.

12. The plating apparatus of claim 11, wherein the rotation mechanism is configured to position the first portion of the substrate in the dynamic shielding region for a different time than the second portion of the substrate by increasing or decreasing the rotation speed of the substrate holder or reversing the rotation direction of the substrate holder when the first portion of the substrate is located in the dynamic shielding region.

13. The plating apparatus according to claim 12, wherein the first portion of the substrate includes a portion having a thicker or thinner plating film thickness than the second portion of the substrate.

14. The plating apparatus of claim 13, wherein, when the first portion of the substrate includes a portion having a thicker plating film thickness than the second portion of the substrate, the shielding mechanism is configured to position the shielding member in the shielding position when the first portion of the substrate is located in the dynamic shielding area.

15. The plating apparatus of claim 13, wherein, when the first portion of the substrate includes a portion having a thinner plating film thickness than the second portion of the substrate, the shielding mechanism is configured to position the shielding member in the retracted position when the first portion of the substrate is located in the dynamic shielding area.

16. The plating apparatus according to claim 15, wherein the dynamic shielding region has a shielding rate that changes when a first portion of the substrate is staying in the dynamic shielding region compared to when a second portion of the substrate is staying in the dynamic shielding region.

17. A plating tank configured to contain a plating solution, an anode disposed in the plating tank, a substrate holder configured to hold a substrate with its surface to be plated facing downward, a resistor disposed between the anode and the substrate holder and having a plurality of holes penetrating from the anode side to the substrate holder side, a lifting mechanism configured to lift and lower the substrate holder, a rotation mechanism configured to rotate the substrate holder, a shielding member capable of shielding an electric field formed between the anode and the substrate, and a shielding mechanism configured to position the shielding member between a shielding position between the anode and the substrate and a retracted position retracted from between the anode and the substrate, a second region disposed inside and spaced apart from the first region and having a second shielding ratio greater than the first shielding ratio; and a third region disposed between the first region and the second region and having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio, the third region extending circumferentially beyond the dynamic shielding region and having the third shielding ratio uniformly in the extended region; and a fourth region disposed inside the second region and in another circumferential portion of the second region and having a fourth shielding ratio smaller than the second shielding ratio and the same as the third shielding ratio.

18. The plating apparatus according to claim 17, wherein the resistor further includes a fifth region having an opening larger than the hole, the fifth region being disposed at another circumferential portion of the first region and another circumferential portion of the third region.

19. The plating apparatus according to claim 18, wherein the resistor further includes a sixth region disposed at another portion in the circumferential direction of the first region and the fifth region and having a sixth shielding ratio greater than the first shielding ratio.

20. A plating apparatus according to any one of claims 17 to 19, wherein the first region has an area that is less than 0.35% of the total area of ​​the resistor that faces the substrate held by the substrate holder.

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