Semiconductor waste gas treatment system and control method therefor

Abstract

The present application relates to the technical field of semiconductor manufacturing, and in particular to a semiconductor waste gas treatment system and a control method therefor. The semiconductor waste gas treatment system comprises a buffer storage tank, a fan, and a reaction chamber. A first gas inlet of the buffer storage tank is suitable for being communicated with a waste gas discharge port, and a first gas outlet of the buffer storage tank is communicated with a first gas inlet of the reaction chamber by means of the fan; a switch valve and a flow meter are sequentially arranged along a gas flow direction on the pipeline connecting the fan and the reaction chamber; the buffer storage tank is provided with a pressure detector; and the fan is suitable for controlling the exhaust flow rate of the buffer storage tank on the basis of a detection result from the pressure detector. The present invention can cope with the intake condition of various flammable waste gases without being affected by unstable intake volumes, smooth out the fluctuations in waste gas flow, and provide sufficient reaction and treatment time.

Description

Semiconductor exhaust gas treatment system and control method for semiconductor exhaust gas treatment system

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Chinese Patent Application No. 2024104972487, filed on April 24, 2024, entitled "Semiconductor Exhaust Gas Treatment System and Control Method for Semiconductor Exhaust Gas Treatment System". The entire contents of the above application are incorporated herein by reference. Technical Field

[0003] This application relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor waste gas treatment system and a control method for the semiconductor waste gas treatment system. Background Technology

[0004] During semiconductor manufacturing, various toxic and harmful gases are generated, including some flammable gases such as silane and H2. If the flow rate of these gases is too high or the treatment methods are not appropriate, they can easily lead to deflagration or explosion, posing a significant hazard to personnel and the environment. Existing semiconductor waste treatment systems passively receive waste gases and cannot handle sudden changes in the intake gas volume, which can easily lead to deflagration. Summary of the Invention

[0005] This application provides a semiconductor waste gas treatment system and a control method for the semiconductor waste gas treatment system, which solves one of the defects in the prior art. It can cope with various flammable waste gas intake conditions, is not affected by unstable intake volume, smoothly treats waste gas flow fluctuations, and has sufficient reaction time.

[0006] This application provides a semiconductor waste gas treatment system, including a slow storage tank, a fan, and a reaction chamber. The first air inlet of the slow storage tank is adapted to be connected to the waste gas exhaust port, and the first air outlet of the slow storage tank is connected to the first air inlet of the reaction chamber through the fan. A switching valve and a flow meter are sequentially arranged along the gas flow direction on the pipeline connecting the fan and the reaction chamber. The slow storage tank is equipped with a pressure detector, and the fan is adapted to control the exhaust flow rate of the slow storage tank according to the detection result of the pressure detector.

[0007] According to the semiconductor waste gas treatment system provided in this application, a UV detector is provided on the pipeline connecting the fan and the reaction chamber, and a three-way valve is provided on the pipeline connecting the slow storage tank and the waste gas exhaust port. The three-way valve is also connected to the acid discharge system.

[0008] According to the semiconductor waste gas treatment system provided in this application, the pipeline connecting the three-way valve and the acid discharge system is connected to a nitrogen source through a first branch pipeline, and the first branch pipeline is provided with a first valve body.

[0009] According to the semiconductor waste gas treatment system provided in this application, the pipe connecting the fan and the reaction chamber is connected to a water source through a second branch pipe, and the second branch pipe is provided with a second valve body.

[0010] According to the semiconductor waste gas treatment system provided in this application, the first air inlet of the reaction chamber is connected to the nitrogen source through a third branch pipe, and the third branch pipe is provided with a third valve body.

[0011] According to the semiconductor waste gas treatment system provided in this application, the second outlet of the slow storage tank is connected to the acid discharge system, a fourth valve body is provided on the pipeline connecting the second outlet of the slow storage tank to the acid discharge system, the pipeline connecting the second outlet of the slow storage tank to the acid discharge system is connected to the nitrogen source through a fourth branch pipeline, and a fifth valve body is provided on the fourth branch pipeline.

[0012] According to the semiconductor waste gas treatment system provided in this application, the second air inlet of the slow storage tank is connected to the nitrogen source through a fifth branch pipe, and the fifth branch pipe is provided with a sixth valve body.

[0013] According to the semiconductor waste gas treatment system provided in this application, a flow limiting valve and a speed detector are sequentially provided along the gas flow direction on the pipeline connecting the fan and the reaction chamber.

[0014] This application also provides a control method for a semiconductor exhaust gas treatment system, applied to the semiconductor exhaust gas treatment system described above, comprising:

[0015] By adjusting the exhaust flow rate of the blower, the actual pressure of the slow storage tank is controlled to be lower than the set pressure;

[0016] Since the actual pressure of the slow storage tank is less than the set pressure, the maximum air output of the fan is controlled to be less than the set air output by adjusting the exhaust flow rate of the fan.

[0017] A control method for a semiconductor waste gas treatment system provided in this application includes:

[0018] By adjusting the opening of the flow-limiting valve, the air delivery speed of the fan is controlled to be greater than the combustion speed of the exhaust gas.

[0019] This application provides a semiconductor waste gas treatment system, specifically a system for treating large-flow flammable waste gas from a semiconductor process. Flammable waste gas discharged from the factory's exhaust outlet enters the slow-release tank through its first inlet. On the waste gas inlet pipeline connecting the first outlet of the slow-release tank to the first inlet of the reaction chamber, a fan, a switching valve, and a flow meter are sequentially installed along the airflow direction. The switching valve controls the opening and closing of the waste gas inlet pipeline. When the switching valve is open, the fan draws the waste gas from the slow-release tank and sends it into the reaction chamber through its first inlet. The waste gas is ignited and burned in the reaction chamber by a burner. A pressure detector is installed on the slow-release tank to monitor the internal pressure in real time, and the flow meter is used to monitor the flow rate of the waste gas in the inlet pipeline in real time. Based on the pressure detector's readings, the fan can be adjusted to control the exhaust flow rate of the slow-release tank.

[0020] Flammable waste gas discharged directly from the exhaust port is uncontrolled. When its volume suddenly increases, or when it is ignited by the burner immediately upon entering the reaction chamber, deflagration or even explosion may occur. This application adds a buffer tank to the pipeline between the exhaust port and the combustion chamber, thus buffering the inlet exhaust gas pipeline before the reaction chamber. This buffers the impact of unstable exhaust gas flow, pre-storing the waste gas in the tank. The flow rate of the waste gas entering the reaction chamber is then controlled and regulated by a fan, valve, flow meter on the inlet exhaust gas pipeline, and a pressure detector on the buffer tank. This addresses various flammable waste gas intake conditions, is unaffected by unstable intake volume, smoothly handles flow fluctuations, and provides sufficient reaction time.

[0021] The use of a slow-release storage tank enables multi-stage control, unaffected by changes in upstream gas flow, thus improving both treatment safety and efficiency. Furthermore, the first outlet of the slow-release storage tank uses a fan and flow meter to regulate the throughput, ensuring continuous waste gas treatment within the reaction chamber and preventing deflagration, flameout, or other unforeseen events.

[0022] In addition to the technical problems solved by this application, the technical features of the technical solutions constituted, and the advantages brought about by the technical features of these technical solutions as described above, other technical features of this application and the advantages brought about by these technical features will be further explained in conjunction with the accompanying drawings, or can be learned through practice of this application. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 is a schematic diagram of the semiconductor waste gas treatment system provided in this application.

[0025] Reference numerals: 100, Buffer storage tank; 110, Pressure detector; 120, Fourth valve body; 200, Fan; 210, Switch valve; 220, Flow meter; 230, UV detector; 240, Flow restrictor valve; 250, Speed ​​detector; 260, Inlet / outlet gas pipeline; 300, Reaction chamber; 310, Seventh valve body; 320, Flow detector; 330, Compressed air inlet pipeline; 340, Burner; 400, Exhaust gas outlet; 410, Three-way valve; 500, Nitrogen source; 510, First branch pipeline; 511, First valve body; 520, Third branch pipeline; 521, Third valve body; 530, Fourth branch pipeline; 531, Fifth valve body; 540, Fifth branch pipeline; 541, Sixth valve body; 600, Water source; 610, Second branch pipeline; 620, Second valve body; 700. Acid discharge system. Detailed Implementation

[0026] The embodiments of this application will be described in further detail below with reference to the accompanying drawings and examples. The following examples are used to illustrate this application, but should not be used to limit the scope of this application.

[0027] In the description of the embodiments of this application, it should be noted that the terms "center," "upper," "lower," "front," "rear," "left," "right," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0028] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application based on the specific circumstances.

[0029] In the embodiments of this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0030] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the embodiments of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0031] As shown in Figure 1, the semiconductor waste gas treatment system provided in this application embodiment includes a slow storage tank 100, a fan 200, and a reaction chamber 300. The first air inlet of the slow storage tank 100 is adapted to be connected to the waste gas exhaust port 400. The first air outlet of the slow storage tank 100 is connected to the first air inlet of the reaction chamber 300 through the fan 200. A switching valve 210 and a flow meter 220 are sequentially provided along the gas flow direction on the pipeline connecting the fan 200 and the reaction chamber 300. The slow storage tank 100 is provided with a pressure detector 110. The fan 200 is adapted to control the exhaust flow rate of the slow storage tank 100 according to the detection result of the pressure detector 110.

[0032] This application provides a semiconductor waste gas treatment system that treats large-volume flammable waste gas from a semiconductor process. Flammable waste gas discharged from the factory's exhaust port 400 enters the slow storage tank 100 through its first inlet. On the waste gas inlet pipeline 260, which connects the first outlet of the slow storage tank 100 to the first inlet of the reaction chamber 300, a fan 200, a switching valve 210, and a flow meter 220 are sequentially arranged along the airflow direction. The switching valve 210 controls the opening and closing of the waste gas inlet pipeline 260. When the switching valve 210 is open, the fan 200 can expel flammable waste gas from the slow storage tank 100. The exhaust gas is extracted and sent into the reaction chamber 300 through the first air inlet. The exhaust gas is ignited and burned in the reaction chamber 300 by the burner 340. A pressure detector 110 is installed on the slow storage tank 100 to detect the pressure inside the slow storage tank 100 in real time. A flow meter 220 is used to detect the flow rate of the exhaust gas in the exhaust gas inlet pipe 260 in real time. The fan 200 can be adjusted according to the detection result of the pressure detector 110, thereby controlling the exhaust flow rate of the slow storage tank 100.

[0033] The flammable waste gas discharged directly from the exhaust port 400 is uncontrolled. When its volume suddenly increases, or when it is ignited by the burner 340 just after entering the reaction chamber 300, deflagration or even explosion may occur. This application adds a buffer storage tank 100 to the pipeline between the exhaust gas discharged from the exhaust port 400 and the pipeline before combustion treatment in the reaction chamber 300. That is, the exhaust gas inlet pipeline 260 before the reaction chamber 300 is buffered to reduce the impact of unstable exhaust gas flow and to buffer the waste gas in advance. The waste gas can be temporarily stored in the buffer storage tank 100. Then, the exhaust gas inlet pipeline 260, the fan 200, the switch valve 210, the flow meter 220 and the pressure detector 110 on the buffer storage tank 100 work together to control and regulate the flow of waste gas sent into the reaction chamber 300. It can cope with various flammable waste gas intake conditions, is not affected by unstable intake volume, and smoothly handles the fluctuation of waste gas flow, with sufficient reaction time.

[0034] The use of the slow storage tank 100 enables multi-stage control, unaffected by changes in upstream gas flow, thus improving both treatment safety and efficiency. Furthermore, the first outlet of the slow storage tank 100 uses a fan 200 and a flow meter 220 to regulate the processing volume, ensuring the continuity of waste gas treatment in the reaction chamber 300 and preventing deflagration, flameout, or other unforeseen events.

[0035] In this embodiment, the second air inlet of the reaction chamber 300 is provided with a compressed air inlet pipe 330. Along the gas flow direction, the compressed air inlet pipe 330 is sequentially equipped with a seventh valve body 310 and a flow detector 320. The seventh valve body 310 controls the opening and closing of the compressed air inlet pipe 330, and the flow detector 320 detects the compressed air flow rate within the compressed air inlet pipe 300 in real time. The compressed air enters the reaction chamber 300 through the seventh valve body 310 and the flow detector 320, and is ignited by the burner 340, providing the combustion air volume required for exhaust gas combustion. After the exhaust gas in the reaction chamber 300 is treated, it is discharged to the plant exhaust treatment facility through the second air outlet of the reaction chamber 300.

[0036] In the initial stage of flammable waste gas treatment: Since the slow storage tank 100 can store some waste gas, when the burner 340 starts, the fan 200 starts, and the switching valve 210 opens, drawing the flammable waste gas into the reaction chamber 300 for treatment at an initial flow rate Q1. At this time, the opening of the seventh valve body 310 is adjusted, and a suitable combustion-supporting gas is provided based on feedback from the flow detector 320. In this embodiment, the initial flow rate Q1 is 50 slm. In other embodiments, this flow rate can be adjusted according to the size of different reaction chambers 300.

[0037] During the stable phase of flammable waste gas treatment: Because the initial flow rate Q1 is relatively small compared to the inlet flow rate Q of the waste gas entering the slow storage tank 100, the waste gas in the slow storage tank 100 will slowly accumulate, causing the actual pressure P detected by the pressure detector 110 to gradually increase. At this time, it is necessary to control the pressure in the slow storage tank 100 at the target pressure P0. Therefore, the operating speed of the blower 200 is increased to accelerate the outflow of waste gas from the slow storage tank 100, thereby controlling the actual pressure P in the slow storage tank 100 to around P0. At this time, the opening of the seventh valve body 310 is adjusted, and a suitable combustion-supporting gas is provided through feedback from the flow detector 320, thus achieving stable operation of the equipment.

[0038] In this embodiment, to improve the safety of the equipment, it is recommended that the exhaust gas inlet pipe 260 and the reaction chamber 300 be made of metal.

[0039] According to one embodiment of this application, a UV detector 230 is provided on the pipeline connecting the fan 200 and the reaction chamber 300, and a three-way valve 410 is provided on the pipeline connecting the slow storage tank 100 and the exhaust port 400. The three-way valve 410 is also connected to the acid discharge system 700. In this embodiment, the fan 200, the on / off valve 210, the flow meter 220, and the UV detector 230 are sequentially arranged along the gas flow direction on the inlet / outlet gas pipeline 260 connecting the fan 200 and the reaction chamber 300. The UV detector 230 is used to detect in real time whether there is a flame in the inlet / outlet gas pipeline 260 near the first inlet of the reaction chamber 300. The inlet of the three-way valve 410 is connected to the factory's exhaust port 400, the first outlet of the three-way valve 410 is connected to the first air inlet of the slow storage tank 100, and the second outlet of the three-way valve 410 is connected to the acid discharge system 700. That is, the three-way valve 410 divides the exhaust gas discharged from the exhaust port 400 into two paths: the first path goes to the slow storage tank 100, and the second path goes to the acid discharge system 700.

[0040] By designing a backfire detection on the exhaust gas inlet pipe 260, when the UV detector 230 detects a flame in the exhaust gas inlet pipe 260, the fan 200 and the switch valve 210 are immediately shut off, and the exhaust gas from the exhaust port 400 is switched from the first path to the second path through the three-way valve 410, the slow storage tank 100 no longer receives exhaust gas, and the exhaust gas is discharged to the acid discharge system 700.

[0041] According to one embodiment of this application, the pipeline connecting the three-way valve 410 to the acid discharge system 700 is connected to the nitrogen source 500 via a first branch pipeline 510, and the first branch pipeline 510 is provided with a first valve body 511. In this embodiment, a first branch pipeline 510 is provided on the pipeline connecting the second outlet of the three-way valve 410 to the acid discharge system 700, so that the first branch pipeline 510 is connected to the nitrogen source 500, and the first valve body 511 controls the opening and closing of the first branch pipeline 510.

[0042] When the UV detector 230 detects a flame in the exhaust gas inlet pipe 260, the fan 200 and the switch valve 210 are shut off. The three-way valve 410 bypasses the exhaust gas to the acid discharge system 700. At the same time, the first valve body 511 is opened to purge and dilute the pipeline that bypasses the exhaust gas to the acid discharge system 700 with a large amount of nitrogen, ensuring the safety of the exhaust gas discharge.

[0043] During abnormal equipment shutdown: When the equipment shuts down abnormally, the three-way valve 410 bypasses, stopping the waste gas from entering the slow storage tank 100 and instead entering the acid discharge system 700 via the bypass. Simultaneously, the equipment sends a signal to the main production equipment to stop waste gas emissions. At this time, the first valve body 511 is opened to purge and dilute the internal pipeline, preventing flammable waste gas from burning within the acid discharge system 700.

[0044] According to one embodiment of this application, the pipe connecting the fan 200 and the reaction chamber 300 is connected to the water source 600 via a second branch pipe 610, and the second branch pipe 610 is equipped with a second valve body 620. In this embodiment, a second branch pipe 610 is provided on the pipe connecting the flow meter 220 and the reaction chamber 300, so that the second branch pipe 610 is connected to the water source 600, and the second valve body 620 controls the opening and closing of the second branch pipe 610. The connection point of the second branch pipe 610 on the exhaust gas inlet pipe 260 is located between the flow meter 220 and the UV detector 230.

[0045] When the UV detector 230 detects a flame in the exhaust gas inlet pipe 260, the fan 200 and the on / off valve 210 are shut off. The three-way valve 410 bypasses the exhaust gas to the acid discharge system 700. Simultaneously, the first valve body 511 is opened to purge and dilute the exhaust gas bypass pipe to the acid discharge system 700 with a large amount of nitrogen, ensuring the safety of the exhaust gas discharge. The second valve body 620 is opened for emergency treatment, allowing water to enter the exhaust gas inlet pipe 260 and reach the first air inlet of the reaction chamber 300 to perform fire extinguishing action, ensuring the safety of the semiconductor exhaust gas treatment system.

[0046] According to one embodiment of this application, the first air inlet of the reaction chamber 300 is connected to the nitrogen source 500 through a third branch pipe 520, and the third branch pipe 520 is provided with a third valve body 521. In this embodiment, a third branch pipe 520 is provided on the exhaust gas inlet pipe 260 connecting the slow storage tank 100 and the reaction chamber 300, so that the third branch pipe 520 is connected to the nitrogen source 500, and the third valve body 521 controls the opening and closing of the third branch pipe 520.

[0047] In this embodiment, the nitrogen source 500 is connected to the first branch pipe 510 and the third branch pipe 520. The first branch pipe 510 is connected to the pipe that connects the three-way valve 410 and the acid discharge system 700. The third branch pipe 520 is connected to the second branch pipe 610. That is, the third branch pipe 520 is set on the second branch pipe 610 so that the third branch pipe 520 is connected to the nitrogen source 500.

[0048] During abnormal equipment shutdown: When the equipment shuts down abnormally, the three-way valve 410 bypasses, stopping the waste gas from entering the slow storage tank 100 and instead entering the acid discharge system 700 via a bypass. Simultaneously, the equipment sends a signal to the main production equipment to stop waste gas emission. At this time, the first valve body 511 is opened to purge and dilute the internal pipeline, preventing flammable waste gas from burning within the acid discharge system 700. The third valve body 521 is opened, allowing nitrogen to flow through the third branch pipe 520 into the second branch pipe 610, then through the second branch pipe 610 into the waste gas inlet pipe 260, and finally into the reaction chamber 300 to purge and dilute the waste gas, preventing residual waste gas within the reaction chamber 300 and potential hazards.

[0049] According to one embodiment provided in this application, the second outlet of the slow storage tank 100 is connected to the acid discharge system 700. A fourth valve body 120 is provided on the pipeline connecting the second outlet of the slow storage tank 100 to the acid discharge system 700. The pipeline connecting the second outlet of the slow storage tank 100 to the acid discharge system 700 is connected to the nitrogen source 500 through a fourth branch pipeline 530. A fifth valve body 531 is provided on the fourth branch pipeline 530.

[0050] In this embodiment, the fourth valve body 120 controls the opening and closing of the pipeline connecting the slow storage tank 100 and the acid discharge system 700. A fourth branch pipeline 530 is provided on the pipeline connecting the slow storage tank 100 and the acid discharge system 700, so that the fourth branch pipeline 530 is connected to nitrogen gas. The fifth valve body 531 controls the opening and closing of the fourth branch pipeline 530.

[0051] In this embodiment, the nitrogen source 500 is connected to the first branch pipe 510, the third branch pipe 520, and the fourth branch pipe 530. The first branch pipe 510 is connected to the pipe connecting the three-way valve 410 and the acid discharge system 700. The third branch pipe 520 is connected to the second branch pipe 610, that is, the third branch pipe 520 is installed on the second branch pipe 610 so that the third branch pipe 520 is connected to the nitrogen source 500. The fourth branch pipe 530 is connected to the pipe connecting the slow storage tank 100 and the acid discharge system 700.

[0052] Waste gas treatment in slow storage tank 100: After an abnormal shutdown of the equipment, the controller starts timing. If the set time T is not reached, the equipment resumes operation, and the waste gas in slow storage tank 100 continues to enter reaction chamber 300 for treatment. If the set time T is reached but the equipment has not resumed operation, the fourth valve 120 is opened, and the waste gas in slow storage tank 100 directly enters acid discharge system 700, ensuring the safety of waste gas discharge. The fifth valve 531 is then opened to purge and dilute a large amount of waste gas directly discharged from slow storage tank 100 into acid discharge system 700. In this embodiment, the set time T can be set differently depending on the specific equipment conditions.

[0053] According to one embodiment of this application, the second air inlet of the slow storage tank 100 is connected to the nitrogen source 500 via a fifth branch pipe 540, and the fifth branch pipe 540 is provided with a sixth valve body 541. In this embodiment, the second air inlet of the slow storage tank 100 is provided with a fifth branch pipe 540, so that the fifth branch pipe 540 is connected to the nitrogen source 500, and the sixth valve body 541 controls the opening and closing of the fifth branch pipe 540.

[0054] In this embodiment, the nitrogen source 500 is connected to the first branch pipe 510, the third branch pipe 520, the fourth branch pipe 530, and the fifth branch pipe 540. The first branch pipe 510 is connected to the pipe connecting the three-way valve 410 and the acid discharge system 700. The third branch pipe 520 is connected to the second branch pipe 610, that is, the third branch pipe 520 is installed on the second branch pipe 610 so that the third branch pipe 520 is connected to the nitrogen source 500. The fourth branch pipe 530 is connected to the pipe connecting the slow storage tank 100 and the acid discharge system 700. The fifth branch pipe 540 is connected to the slow storage tank 100.

[0055] Waste gas treatment in slow storage tank 100: After an abnormal equipment shutdown, the controller starts timing. If the set time T is not reached, the equipment resumes operation, and the waste gas in slow storage tank 100 continues to enter reaction chamber 300 for treatment. If the set time T is reached but the equipment has not resumed operation, the fourth valve 120 is opened, and the waste gas in slow storage tank 100 directly enters acid discharge system 700, ensuring the safety of waste gas discharge. The fifth valve 531 is opened to purge and dilute a large amount of waste gas directly discharged from slow storage tank 100 into the acid discharge system. At the same time, the sixth valve 541 is opened to introduce nitrogen into slow storage tank 100 to ensure that all waste gas in slow storage tank 100 is emptied and flows into acid discharge system 700.

[0056] According to one embodiment of this application, a flow-limiting valve 240 and a velocity detector 250 are sequentially arranged along the gas flow direction on the pipeline connecting the fan 200 and the reaction chamber 300. In this embodiment, a fan 200, a switching valve 210, a flow meter 220, a second branch pipeline 610, a UV detector 230, a flow-limiting valve 240, and a velocity detector 250 are sequentially arranged along the gas flow direction on the exhaust gas inlet pipeline 260 connecting the slow storage tank 100 and the reaction chamber 300. The velocity detector 250 is used to detect the flow rate of the exhaust gas entering the reaction chamber 300 in the exhaust gas inlet pipeline 260 in real time.

[0057] When the flammable waste gas to be treated flows into the reaction chamber 300 through the waste gas inlet pipe 260, it passes sequentially through the flow limiting valve 240 and the velocity detector 250. The purpose of setting up the flow limiting valve 240 and the velocity detector 250 is to prevent gas backfire. Each gas has a different combustion rate. When the semiconductor waste gas treatment system needs to treat a specific flammable gas, the inherent combustion rate S0 of that gas must be ensured. Therefore, the gas velocity at the outlet of the flow limiting valve 240 must be greater than the inherent combustion rate S0, i.e., the gas velocity S detected by the velocity detector 250 must be greater than S0. The control system adjusts the opening of the flow limiting valve 240 according to the different gas volumes delivered by the fan 200 to ensure that S > S0, thereby preventing equipment backfire.

[0058] Increasing the gas flow rate entering the reaction chamber 300 to make the gas flow rate greater than the gas combustion speed can avoid the occurrence of flashback. The anti-flashback design with increased flow rate improves the safety of the equipment. In other embodiments, the first gas inlet of the reaction chamber 300 can use a reduced-port design to ensure that the gas flow rate is greater than the gas combustion speed and prevent the equipment from flashing back.

[0059] The control method of the semiconductor waste gas treatment system provided by the present application will be described below. The control method of the semiconductor waste gas treatment system described below can be mutually referred to with the semiconductor waste gas treatment system described above.

[0060] An embodiment of the present application further provides a control method for a semiconductor waste gas treatment system, which is applied to the semiconductor waste gas treatment system as described in the above embodiment and includes:

[0061] By adjusting the exhaust flow rate of the fan 200, the actual pressure of the buffer storage tank 100 is controlled to be less than the set pressure;

[0062] Based on the actual pressure of the buffer storage tank 100 being less than the set pressure, by adjusting the exhaust flow rate of the fan 20, the maximum air output of the fan 200 is controlled to be less than the set exhaust volume.

[0063] The control method of the semiconductor waste gas treatment system in the embodiment of the present application is the control method of the semiconductor waste gas treatment system in the above embodiment. To ensure the maximum pressure limit Pmax required for the normal operation of the front-end equipment of the waste gas inlet pipeline 260, through the adjustment of the fan 200, the internal pressure of the buffer storage tank 100 must be less than Pmax, that is, the real-time pressure P detected by the pressure detector 110 < Pmax. The set pressure of the buffer storage tank 100 is P0, so P0 ≤ Pmax. On the premise of P < P0, the fan 200 can adjust the exhaust flow rate according to the waste gas treatment volume of the reaction chamber 300, and the maximum exhaust flow rate Q of the fan 200 must be less than the maximum treatment volume Qmax of the reaction chamber 300. This improves the stability and processing efficiency of the equipment operation. The coordinated adjustment of multiple control flows reduces energy consumption.

[0064] According to an embodiment provided by the present application, the control method of the semiconductor waste gas treatment system includes:

[0065] By controlling the opening degree of the flow-limiting valve 240, the air supply speed of the fan 200 is controlled to be greater than the gas combustion speed.

[0066] In this embodiment, when the semiconductor exhaust gas treatment system needs to treat a specific flammable gas, the gas has an inherent combustion rate S0. Therefore, it is necessary to ensure that the gas flow rate at the outlet of the flow restrictor valve 240 is greater than the inherent combustion rate S0, i.e., the gas velocity S detected by the velocity detector 250 is greater than S0. The control system will adjust the opening of the flow restrictor valve 240 according to the different gas volumes delivered by the fan 200 to ensure that S > S0, thereby preventing backfire from occurring in the equipment.

[0067] When using these valves, it is not limited to whether they are shut-off valves, electric valves, solenoid valves, or other types of valves that can be switched on or off.

[0068] The above embodiments are for illustrative purposes only and are not intended to limit the scope of this application. Although this application has been described in detail with reference to the embodiments, those skilled in the art should understand that various combinations, modifications, or equivalent substitutions of the technical solutions of this application do not depart from the spirit and scope of the technical solutions of this application and should be covered within the scope of the claims of this application.

Claims

1. A semiconductor waste gas treatment system, characterized in that: The device includes a slow storage tank, a fan, and a reaction chamber. The first air inlet of the slow storage tank is adapted to be connected to an exhaust port. The first air outlet of the slow storage tank is connected to the first air inlet of the reaction chamber through the fan. A switching valve and a flow meter are sequentially installed along the gas flow direction on the pipeline connecting the fan and the reaction chamber. The slow storage tank is equipped with a pressure detector. The fan is adapted to control the exhaust flow rate of the slow storage tank according to the detection result of the pressure detector.

2. The semiconductor waste gas treatment system according to claim 1, characterized in that: A UV detector is installed on the pipeline connecting the blower and the reaction chamber, and a three-way valve is installed on the pipeline connecting the slow storage tank and the exhaust port. The three-way valve is also connected to the acid discharge system.

3. The semiconductor waste gas treatment system according to claim 2, characterized in that: The pipeline connecting the three-way valve to the acid discharge system is connected to the nitrogen source through a first branch pipeline, and the first branch pipeline is equipped with a first valve body.

4. The semiconductor waste gas treatment system according to claim 2, characterized in that: The pipe connecting the blower and the reaction chamber is connected to the water source through a second branch pipe, and the second branch pipe is equipped with a second valve body.

5. The semiconductor waste gas treatment system according to claim 3, characterized in that: The first air inlet of the reaction chamber is connected to the nitrogen source through a third branch pipe, and the third branch pipe is equipped with a third valve body.

6. The semiconductor waste gas treatment system according to claim 3, characterized in that: The second outlet of the slow storage tank is connected to the acid discharge system. A fourth valve body is provided on the pipeline connecting the second outlet of the slow storage tank to the acid discharge system. The pipeline connecting the second outlet of the slow storage tank to the acid discharge system is connected to the nitrogen source through a fourth branch pipeline. A fifth valve body is provided on the fourth branch pipeline.

7. The semiconductor waste gas treatment system according to claim 6, characterized in that: The second air inlet of the slow storage tank is connected to the nitrogen source through a fifth branch pipe, and the fifth branch pipe is equipped with a sixth valve body.

8. The semiconductor waste gas treatment system according to any one of claims 1 to 7, characterized in that: A flow-limiting valve and a speed detector are sequentially installed along the gas flow direction on the pipeline connecting the fan and the reaction chamber.

9. A control method for a semiconductor waste gas treatment system, characterized in that: The semiconductor exhaust gas treatment system as described in any one of claims 1 to 8 comprises: By adjusting the exhaust flow rate of the blower, the actual pressure of the slow storage tank is controlled to be lower than the set pressure; Since the actual pressure of the slow storage tank is less than the set pressure, the maximum air output of the fan is controlled to be less than the set air output by adjusting the exhaust flow rate of the fan.

10. The control method for the semiconductor waste gas treatment system according to claim 9, characterized in that: include: By adjusting the opening of the flow-limiting valve, the air delivery speed of the fan is controlled to be greater than the combustion speed of the exhaust gas.

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