Optical system-in-package and optical module using same

Abstract

The present invention relates to an optical system-in-package (O-SIP) and an optical module using same, the package being capable of implementing: a short signal line by minimizing the length of a signal wiring between optical / electronic elements through the packaging of the elements in a three-dimensional stacking structure; and a small integrated structure at a semiconductor package level. The O-SIP according to the present invention comprises: a mold body having flat first and second surfaces on the lower and upper parts thereof; an electronic IC molded inside the mold body such that a pad is exposed to the second surface; a rewiring layer, which is formed on the second surface of the mold body, has wiring for connecting to a pad of the electronic IC, and includes an external connection terminal arranged to be electrically connected to the outside from the wiring; and a photonic IC which is vertically stacked below the rewiring layer, and which has the pad simultaneously connected to the wiring so as to transmit or receive an optical signal.

Description

Optical system-in-package and optical module using the same

[0001] The present invention relates to an optical system-in-package (O-SIP), and more specifically, to an optical system-in-package (O-SIP) capable of implementing short signal lines and miniaturizing and integrating structures at the semiconductor package level by packaging optical / electronic devices in a 3D stacked structure to minimize the length of signal wiring between devices, and to an optical module using the same.

[0002] Semiconductor chips not only perform logic or driver IC functions, but can also produce photodetectors that respond to light or emit light. These optical components are used in a variety of fields, including optical transceivers that provide optical connections between servers, optical modules that transmit video data between TVs and set-top boxes, or between virtual reality (VR) glasses and graphics processing units (GPUs).

[0003] Additionally, other applications of photonic devices include proximity sensors, TOF (Time Of Flight) sensors, and LIDAR (Light Detection And Ranging) that include light-emitting devices.

[0004] Optical devices must be used in conjunction with electronic components that drive or interface with them, thereby converting optical signals into electronic ones. For example, in the field of optical data transmission, optical and electronic components may be used together to create modules that convert electrical signals into optical signals. In another example, in the field of optical sensors, components that convert the characteristics of received light into image data or depth data may be used in conjunction with optical devices.

[0005] All of the above applications have traditionally used PCBs (printed circuit boards) with wiring patterns formed on their surfaces, mounting multiple chips and connecting them via wire bonding. This is typically a Chip-on-Board (CoB) package.

[0006] In addition, instead of the package using the above-mentioned PCB (Printed Circuit Board), a semiconductor package method according to the FOWLP (Fan Out Wafer Level Package) method that does not use a PCB (Printed Circuit Board) can be used to package optical / electrical devices at the wafer level, which is a technology that can improve performance by using a high-precision redistribution layer (RDL) while manufacturing an ultra-thin package.

[0007] Korean Patent Publication No. 10-2023-0122572 (Patent Document 1) discloses an optical system-in-package (O-SIP) that generates or receives an optical signal, in which a photonic IC and an electronic IC that drives or interfaces the photonic IC are molded inside a mold body having flat first and second surfaces at the bottom and top.

[0008] In this case, the photonic IC and electronic IC are arranged side by side on the same plane inside the mold body.

[0009] In addition, in the optical system-in-package (O-SIP) of patent document 1, a plurality of fan-out terminal pads for interconnecting photonic ICs and electronic ICs and electrically connecting them to the outside are arranged on a redistribution layer formed on the second surface of the mold body.

[0010] As in the above patent document 1, when the signal lines interconnecting the photonic IC and the electronic IC are wired in a fan-out form and become long, as the transmission speed per channel continues to increase, the degradation of signal quality in the high-speed region due to such wiring becomes a problem.

[0011] Additionally, in the case of patent document 1, crosstalk between channels occurs between wires, which interferes with signal transmission in high-speed areas.

[0012] To address these issues, internal wiring within the package is required, which dramatically shortens signal wiring lengths by arranging the components in a stacked structure. To address this, there have been examples of stacking optical and electronic components using Through Mold Vias (TMVs).

[0013] However, this case has the disadvantage of lengthening the signal path between the printed circuit board (PCB) or substrate and the chip inside the optical device package. First, since TMV must be used, there must be a VIA with an impedance mismatch at least as thick as the chip, and since most of the wiring must avoid the area of ​​the molded device, the wiring length formed in the fan-out form is longer than when TMV is not used.

[0014] Wafer-level heterogeneous integration for optoelectronic devices can be performed using the FOWLP (Fan Out Wafer Level Package) method, and through the present invention, optoelectronic devices manufactured using different processes can be integrated and manufactured into a single wafer.

[0015] There are various methods for FOWLP technology, including the face-up method, in which the chip is initially patched onto the carrier with the pad side facing upward, and the face-down method, in which the chip is placed with the pad side facing downward.

[0016] The present invention is an invention that solves technical problems required when packaging optical / electronic devices stacked at the wafer level.

[0017] In particular, the problem to be solved by the present invention is to provide an optical system-in-package (O-SIP) in which a photonic IC and / or an electronic IC is encapsulated inside a mold body and the photonic IC or the electronic IC is vertically stacked on a redistribution layer, and to form an optical module by mounting the O-SIP on a main printed circuit board (PCB) or substrate, thereby implementing a short signal line and an integrated structure of optical / electronic elements at the semiconductor package level.

[0018] The present invention has been made to solve the above problems, and its purpose is to provide an optical system-in-package (O-SIP) and an optical module using the same, which can minimize the length of signal wiring between devices by packaging a plurality of photonic ICs and / or electronic ICs in a 3D (Three Dimension) stacked structure in the O-SIP, thereby realizing short signal lines and miniaturizing and implementing an integrated structure at the semiconductor package level.

[0019] In this case, the present invention uses a structure in which a photonic IC or an electronic IC is laminated without using a Through Mold Via (TMV), and the laminated structure can be used in cases where the position of the light-emitting surface is the same as or different from the pad position of the photonic IC.

[0020] In order to solve the above problem, the present invention changes the structure in which an optical system-in-package (O-SIP) encapsulated on a main PCB or substrate is positioned and a component stacked thereon is positioned, so that a structure is formed in which the component stacked between the main PCB or substrate and the encapsulated optical system-in-package (O-SIP) is positioned.

[0021] In this case, the problem can be solved by forming a cavity in the main PCB or package structure, filling it with a transparent material, or inserting an optical structure to form a light passage to prevent the light entrance or exit from being blocked by the main PCB or package structure.

[0022] In addition, the present invention does not require the use of a Through Mold Via (TMV) at all, and is a method in which the wiring between the main PCB or substrate and the internal components of an optical system-in-package (O-SIP) can be formed with the shortest possible length, and also a method in which the wiring between the internal components of the optical system-in-package (O-SIP) and the components to be stacked can be formed with the shortest possible length, so that it can have the most superior structure in terms of high-speed signal degradation.

[0023] An optical system-in-package (O-SIP) according to one embodiment of the present invention is characterized by including: a mold body having flat first and second surfaces at the bottom and top; an electronic IC molded inside the mold body so that pads are exposed on the second surface; a redistribution layer formed on the second surface of the mold body and having wiring for connecting to the pads of the electronic IC and having external connection terminals arranged for electrical connection to the outside from the wiring; and a photonic IC vertically stacked below the redistribution layer and having pads connected to the wiring to transmit or receive an optical signal.

[0024] In this case, the pad of the element vertically stacked on the lower portion of the rewiring layer may be directly connected to the wiring of the rewiring layer or directly connected to the pad of the element molded inside the mold body.

[0025] Additionally, the pads of the molded elements inside the mold body can be connected to the wiring of the rewiring layer through a conductive filler.

[0026] Furthermore, the optical system-in-package (O-SIP) according to the present invention may further include a transparent window chip that is packaged by penetrating the inside of the mold body when the optical path direction of the photonic IC chip is perpendicular to the surface where the pad is located.

[0027] Additionally, the photonic IC may be a bare die or a packaged die.

[0028] According to another embodiment of the present invention, an optical system-in-package (O-SIP) is characterized by including: a mold body having first and second surfaces that are flat on the lower and upper surfaces; a photonic IC molded inside the mold body so that pads are exposed on the second surfaces and light is horizontally emitted through edges of the chip; a redistribution layer formed on the second surface of the mold body and having wiring for connecting to the pads of the photonic IC and having external connection terminals arranged for electrically connecting the wiring to the outside; and an electronic IC vertically stacked below the redistribution layer and having pads connected to the wiring to drive or interface the photonic IC.

[0029] The photonic IC may include at least one of a light-emitting element, a light-receiving element, a chip that provides additional functions to the light-emitting element or the light-receiving element or is responsible for signal processing, and a PLC (Planar Lightwave Circuit).

[0030] In addition, the optical system-in-package (O-SIP) according to the present invention may further include a heat dissipation layer formed on the upper surface of the element molded inside the mold body to dissipate heat to the outside of the mold body.

[0031] Furthermore, the optical system-in-package (O-SIP) according to the present invention may further include a heat sink block mounted on an upper surface of the heat dissipation layer to form a metal heat dissipation path for dissipating heat generated from a molded element inside the mold body to the outside; and a thermal interface material (TIM) inserted between the heat dissipation layer and the heat sink block to increase heat dissipation efficiency.

[0032] In addition, the optical system-in-package (O-SIP) according to the present invention further includes an optical component that is provided at the tip of the window chip and can change the optical path, and the optical component can be formed as a lens for collimating light emitted from the photonic IC.

[0033] According to one embodiment of the present invention, an optical module includes an optical system-in-package (O-SIP) including a photonic IC that is molded inside a mold body having flat first and second surfaces at the bottom and top, and is formed on a second surface of the mold body, and is vertically stacked on a lower portion of a redistribution layer having wiring for connecting to the electronic IC and having external connection terminals for electrically connecting to the outside, and that transmits or receives an optical signal while being connected to the wiring; and a main printed circuit board (PCB) having the optical system-in-package (O-SIP) mounted on an upper surface; wherein the main printed circuit board (PCB) is characterized in that it includes a through-hole that forms an optical path when generating or receiving an optical signal in a vertical direction from the photonic IC at a portion corresponding to a light entry / exit portion of the photonic IC.

[0034] In this case, the photonic IC may be a bare die or a packaged die.

[0035] According to another embodiment of the present invention, an optical module comprises: an optical system-in-package (O-SIP), which includes a photonic IC that emits light horizontally through an edge of a chip molded inside a mold body having flat first and second surfaces at the lower and upper portions, and which is formed on the second surface of the mold body and has wiring for connecting to the photonic IC, and an electronic IC that is connected to the wiring and drives or interfaces the photonic IC; and a main printed circuit board (PCB) having the optical system-in-package (O-SIP) mounted on an upper surface; wherein the photonic IC is characterized in that it is a silicon photonics (SiPh) chip having a waveguide for inputting or outputting an optical signal and an optical signal processing unit for processing the optical signal therein.

[0036] The above main printed circuit board (PCB) includes a through hole corresponding to the electronic IC, and may further include a heat sink block installed on the exposed lower surface of the electronic IC to dissipate heat generated from the electronic IC.

[0037] An optical module according to another embodiment of the present invention may further include an underfill bonding layer filled to supplement bonding between the redistribution layer of the optical system-in-package (O-SIP) and the main printed circuit board (PCB) while the external connection terminal of the redistribution layer is electrically connected to the conductive circuit pattern of the main PCB.

[0038] As described above, in the present invention, by packaging a plurality of photonic ICs and / or electronic ICs in a 3D stacked structure, the length of signal wiring between elements can be minimized, thereby realizing short signal lines and miniaturizing and implementing an integrated structure at the semiconductor package level.

[0039] In addition, in the present invention, the photonic IC and the electronic IC are laminated without using TMV, and the laminated structure can be used in cases where the position of the light-emitting surface is the same as or different from the pad position of the photonic IC and the electronic IC.

[0040] Furthermore, in the optical module according to the present invention, the structure is such that the elements stacked between the main PCB or substrate and the sealed optical element package (i.e., optical system-in-package (O-SIP)) are positioned.

[0041] The present invention proposes an optical system-in-package (O-SIP) in which either the photonic IC or the electronic IC can be packaged by being stacked on each other in a 3D structure, while at the same time preventing optical signals from being blocked by the main PCB and the optical device package itself, and maximally suppressing degradation of high-speed electrical signals or occurrence of crosstalk phenomena.

[0042] Furthermore, the device packaged in the optical device package (i.e., optical system-in-package (O-SIP)) of the present invention can be integrated with multiple photonic ICs or multiple photonic ICs and electronic ICs. This enables miniaturization and integration of components, thereby achieving miniaturization and improved performance of the entire optical module.

[0043] In the present invention, an optical system-in-package (O-SIP) is provided in which a photonic IC and / or an electronic IC are sealed inside a mold body and the photonic IC or the electronic IC is vertically stacked on a redistribution layer, and an optical module can be formed by mounting the O-SIP on a main printed circuit board (PCB) or substrate.

[0044] FIGS. 1 to 3 are cross-sectional views showing an optical module having a structure in which elements stacked between a main PCB or substrate and a sealed optical system-in-package (O-SIP) are positioned according to the first to third embodiments of the present invention, respectively.

[0045] FIGS. 4 to 6 are cross-sectional views showing an optical module having a structure in which an electronic IC is positioned as a chip stacked between a main PCB or substrate and a sealed optical system-in-package (O-SIP), and the sealed photonic IC is a molded silicon photonics (SiPh) element through which light exits horizontally through the edge of the chip, according to the fourth to sixth embodiments of the present invention, respectively.

[0046] FIG. 7 is a cross-sectional view showing an example of an optical module in which an electronic IC is encapsulated inside a mold body and a photonic IC is vertically stacked on a redistribution layer, and an optical system-in-package (O-SIP) is mounted on a main printed circuit board (PCB) or substrate according to a seventh embodiment of the present invention, and a transparent window chip is packaged by penetrating inside the mold body when the light path direction is perpendicular to the surface with the pad.

[0047] FIG. 8 is a cross-sectional view showing an example of an optical module in which an electronic IC is encapsulated inside a mold body and a photonic IC is vertically stacked on a redistribution layer, and an optical system-in-package (O-SIP) is mounted on a main printed circuit board (PCB) or substrate, according to an eighth embodiment of the present invention, and an optical component (lens) capable of changing an optical path is included in a window chip.

[0048] Hereinafter, preferred embodiments of the present invention will be described with reference to the attached drawings. In this process, the sizes and shapes of components depicted in the drawings may be exaggerated for clarity and convenience of explanation.

[0049] The present invention relates to an optical system-in-package (O-SIP) in which 3D packaging is achieved by encapsulating one of a plurality of photonic ICs and electronic ICs inside a mold body and placing the other in a 3D stacked structure outside the mold body.

[0050] In this case, at least one photonic IC or electronic IC is encapsulated inside the mold body of the semiconductor package, and the other photonic IC or electronic IC to be stacked is an optical device package that does not exist inside the mold body, i.e., an optical system-in-package (O-SIP).

[0051] The present invention relates to an optical system-in-package (O-SIP) equipped in an optical transceiver or the like, which can be mounted on a main printed circuit board (PCB) to form an optical module, and the optical module can be built into the optical transceiver.

[0052] The above main PCB may be largely equipped with an LDD (laser diode driver) and CDR (clock data recovery) for the optical transmission sub-assembly (TOSA; Transmitter Optical Sub-Assembly), a TIA (transimpedance amplifier) / LA (limiting amplifier) ​​and CDR (clock data recovery) for the optical reception sub-assembly (ROSA; Receiver Optical Sub-Assembly), and an MCU (microcontroller unit) that performs overall transmission and reception control of the optical transceiver.

[0053] In addition, the main PCB is equipped with an ADC (Analog-to-Digital Convertor) and a DAC (Digital-to-Analog Convertor), and can be configured to digitally process signals by an MCU (Microcontroller Unit) and an FPGA (Field Programmable Gate Array), or to drive a TOSA (Optical Transmission Subassembly) and a ROSA (Optical Reception Subassembly) by being configured with a DSP (Digital Signal Processing Device) and a driver. In addition, the main PCB can be configured in various other ways.

[0054] The above photonic IC (PIC; Photonic Integrated Circuit) is an integrated circuit (IC) that performs optical signal processing and can play a role in converting an optical signal into an electrical signal or converting an electrical signal into an optical signal.

[0055] The above photonic IC (PIC) is a semiconductor chip that can generate, receive, or process optical signals and is composed of the following main components.

[0056] First, electrical terminal pads (Electrical PADs) for electrical signal connections can be located on the top (first side), bottom (second side), or both sides of the photonic integrated circuit (PIC) chip. For example, in data communication and optical sensor systems, Electrical PADs are required to effectively connect the photonic integrated circuit (PIC) chip to other circuits.

[0057] Second, an optical port (i.e., an optical entrance / exit) that can emit light to the outside or receive light from the outside can be located on the side (edge), top, or bottom of the photonic IC (PIC) chip. If the optical port is located on the side of the photonic IC (PIC) chip, it is defined as having a lateral optical path, and if it is located on the top or bottom, it is defined as having a vertical optical path. For example, a lateral optical path can be easily connected to an optical fiber, and a vertical optical path can be utilized in optical sensor or display applications.

[0058] Third, it may include an optical signal generation and processing unit capable of generating or processing an optical signal internally.

[0059] The above photonic IC (PIC) has a structure capable of outputting optical energy or an optical signal to the outside. At this time, it can be designed so that light is output from the semiconductor surface, and an anti-reflection coating can be applied to minimize surface reflection. For example, light generated from an internal LED structure or a vertical-cavity surface-emitting laser (VCSEL) can be output through the surface of the photonic IC (PIC).

[0060] Additionally, if an optical waveguide exists inside the photonic IC (PIC), light may be output directly from the end of the optical waveguide, or additional structures such as a lens, reflector, or grating structure may be included to adjust the light path. For example, by using a grating structure inside the photonic IC (PIC), light can be adjusted to be emitted to the outside at a specific angle.

[0061] The above photonic IC (PIC) also includes a function of receiving an optical signal from the outside. This can be implemented by absorbing light on the semiconductor surface, and an anti-reflection coating can be applied to reduce surface reflection. For example, light incident through the surface of the photonic IC (PIC) can be transmitted to the PN junction of a photodiode and converted into an electrical signal. An avalanche photodiode (APD) can be used to improve the optical reception performance, which is useful for increasing the light detection sensitivity. In addition, the optical input can be transmitted through an optical waveguide within the photonic IC (PIC). For example, a grating coupler can be used for efficient coupling when transmitting a signal from an optical fiber to the optical waveguide within the photonic IC (PIC).

[0062] The photonic IC (PIC) may include a part that generates an optical signal, which is implemented by converting electrical energy into optical energy through a semiconductor junction. For example, a vertical-cavity surface-emitting laser (VCSEL), a distributed feedback laser diode (DFB), a Fabry-Perot laser diode (FP), an electro-absorption modulated laser (EML), a light-emitting diode (LED), etc. may be used as a light source within the photonic IC (PIC). At this time, semiconductor materials of group III-V or II-VI are mainly used. For example, a VCSEL based on gallium arsenide (GaAs) is widely used in high-speed data communication, and a DFB laser based on indium phosphide (InP) is used to provide a light source in an optical communication network.

[0063] The generated optical signal can be output to the outside of the photonic IC (PIC) or transmitted to an optical signal processing unit inside. If the optical signal is not generated inside the photonic IC (PIC), an optical signal input from outside can be transmitted to the optical signal processing unit. In addition, the generated optical signal can have a single wavelength or multiple wavelengths, and if multiple wavelengths are utilized, various applications are possible in conjunction with a broadband light source or WDM (Wavelength Division Multiplexing) technology.

[0064] The optical signal processing unit within the photonic IC (PIC) processes optical signals received from external or internal sources. This optical signal processing may include various functions, including the following.

[0065] Optical modulation is a method of modulating an optical signal, direct modulation is a method of changing the optical output of a laser by directly modulating the current, and external modulation is a method of maintaining the optical output constant and modulating it with an external electrical signal.

[0066] Optical detection is a technology that converts an optical signal into an electrical signal. The photodiode (PD) is used as a basic detection element, the PIN photodiode provides low noise and fast response speed, and the APD (Avalanche Photodiode) provides high sensitivity through an internal electronic amplification function.

[0067] Optical amplification is a technology that increases the intensity of a signal. A semiconductor optical amplifier (SOA) directly amplifies a signal light based on a semiconductor, an erbium-doped fiber amplifier (EDFA) performs amplification by utilizing erbium ions doped in an optical fiber, and a lamp / diode pumping amplifier amplifies a signal using an optical pumping method.

[0068] Optical filtering is a technology that selectively transmits only specific optical signals. An optical bandpass filter passes only a specific frequency band, a wavelength selective filter selectively transmits only specific wavelengths, and wavelength multiplexing / demultiplexing (WDM / DWDM, CWDM) processes signals by combining or separating multiple wavelengths.

[0069] Optical Multiplexing & Demultiplexing is a technology that divides or combines one optical channel into multiple signals. Wavelength Division Multiplexing (WDM) multiplexes optical signals of different wavelengths onto a single optical fiber, Time Division Multiplexing (TDM) multiplexes signals at time intervals, and Polarization Division Multiplexing (PDM) multiplexes signals using different polarization states.

[0070] Optical Switching & Routing is a technology that controls the path of an optical signal. An optical switch changes the path of a signal, an optical wavelength router transmits a signal of a specific wavelength to a desired path, and optical burst switching (OBS) is a switching technology that transmits an optical signal in packet units.

[0071] Optical signal processing is a technology that processes signals optically, optical logic operations perform logic operations using light, optical FFT (Fourier Transform) and signal conversion process signals using optical Fourier transform, and optical computation and artificial intelligence optical computing are technologies that perform data processing and calculations using light.

[0072] Optical wavelength conversion is a technology that can change the wavelength of input light into various other wavelengths through structures such as frequency combs.

[0073] As a technology for detecting the surrounding environment, distributed optical fiber sensors use optical fibers to detect changes in a wide area, laser interferometer sensors perform precise sensing using the laser interference effect, and LIDAR (Light Detection and Ranging) is a technology that uses lasers to measure distance and the location of objects.

[0074] The above photonic IC (PIC) may be formed of, for example, a silicon photonics (SiPh) chip having input and output waveguides on one side and the other side of the optical signal processing unit.

[0075] The above optical signal processing unit may be formed of an optical integrated circuit (IC) that performs functions such as a modulator, a beam splitter, and wavelength division multiplexing (WDM).

[0076] Silicon photonics (SiPh) is a silicon-based optical integrated circuit technology that utilizes CMOS processes to enable mass production and cost-effective implementation of photonic integrated circuits (PICs). SiPh-based photonic ICs (PICs) include elements such as optical waveguides, optical modulators, photodetectors, integrated optical couplers, and integrated photonic components.

[0077] Silicon-based optical waveguides can efficiently transmit optical signals by utilizing the high refractive index contrast difference, and modulators based on Mach-Zehnder interferometers (MZIs) or ring resonators can be used to modulate the phase and intensity of optical signals through electric fields or carrier injection. Furthermore, silicon-compatible Ge-on-Si photodetectors can be incorporated, and grating couplers can be utilized for efficient optical coupling between optical fibers and photonic integrated circuits (PICs). In SiPh, an external light source can be used, or a laser element can be incorporated in an InP-based hybrid integration method.

[0078] The above silicon photonics (SiPh) chips are not necessarily implemented using only silicon (Si)-based optical waveguides. Various materials can be used as optical waveguides, and the choice depends on the specific application. Silicon oxynitride (SiON) optical waveguides, made of silicon oxynitride, have a lower refractive index than silicon, yet offer reduced optical loss and a wide wavelength range, making them useful in biosensing and optical filtering applications.

[0079] SiN (Silicon Nitride) optical waveguides have a wide transmission band from 400 nm to 2.5 μm and provide low optical loss, making them widely used in high-power laser systems, optical integrated circuits, and quantum optics applications. Ge-on-Si (Germanium-on-Silicon) optical waveguides exhibit high photoelectric conversion efficiency in the infrared band (greater than 1.55 μm) and are used in photodetectors and infrared sensor applications. Furthermore, SiC (Silicon Carbide)-based optical waveguides, which have high thermal conductivity and durability, are suitable for optical systems operating in extreme environments, and Al (Al)-based optical waveguides offer high transparency and low loss, which can be utilized in optical amplifiers and quantum optics applications.

[0080] To achieve higher bandwidth and performance, optical waveguides based on lithium niobate (LiNbO3) or those utilizing plasmonic structures are being studied. LiNbO3 is a material with excellent nonlinear optical properties and wide electro-optical coefficients, and is being utilized as high-speed optical modulators and optical switching devices. In particular, it can provide higher speeds (over 100 GHz) and lower insertion loss than conventional silicon optical waveguide-based modulators, playing a crucial role in next-generation optical communication systems. Recent research is developing a hybrid Si-LiNbO3 structure to realize high-performance optical modulators while maintaining compatibility with existing CMOS processes. LiNbO3-based optical waveguides are attracting attention as a key technology for ultra-high-speed data center networks, quantum optical communications, and optical AI accelerator applications.

[0081] Plasmonic waveguides are a technology that can transmit optical signals in nanometer-scale ultra-small structures by utilizing metal-insulator-metal (MIM) or metal-insulator-semiconductor (MIS) structures. Plasmonic structures can focus light into a smaller area than conventional silicon waveguides, enabling the creation of extremely small, ultra-high-speed optical modulators and optical switches. Plasmonic-based optical devices have great potential for use in terahertz (THz)-band optical communications, ultra-high-speed signal processing, and integrated optical computing applications. Current research is developing plasmonic structures for use with silicon photonics (SiPh)-based systems by integrating them with CMOS processes.

[0082] In the present invention, all optical integrated circuits containing these various materials and structures are considered PICs (Photonic Integrated Circuits). PICs (130) that integrate these diverse functions can be utilized in various applications such as optical communications, optical sensing, medical care, and data centers.

[0083] The above electronic IC (EIC) drives or interfaces the photonic IC, and may include an integrated circuit (IC) that performs functions such as electrical signal processing, receiving an electrical signal from the photonic IC and amplifying / converting it, and may be configured as a separate IC or an integrated IC that performs a laser diode driver (LD Driver) IC, a modulator driver (Modulator Driver), a clock data recovery (CDR), an equalizer, a transimpedance amplifier (TIA), I2C communication, and a digital signal processing (DSP).

[0084] The above photonic device package can be applied to both cases where the photonic IC to be stacked has the pad direction of the device and the light-receiving / light-emitting direction located on the same surface, or where the pad direction of the device and the light-receiving / light-emitting direction are located on different surfaces.

[0085] In the case of the above photonic IC, there are various types such as a VCSEL (Vertical Cavity Surface Emitting Laser) as a light-emitting element, a PD (Photodiode) as a light-receiving element, and a CIS (CMOS Image Sensor), and there may be a front side illumination (FSI) in which the pads that perform electrical connection with the light-emitting / light-receiving surfaces are arranged on the same surface, or a back side illumination (BSI) in which the pads are arranged on different surfaces.

[0086] In addition, the photonic IC may include a waveguide structure and thus may also include a device for processing an optical signal. In this case, the photonic IC may be manufactured using various technologies such as silicon photonics (SiPh), thin film lithium niobate (LiNbO3), SiON, quartz, and glass.

[0087] Processing of optical signals may include modulation, amplification, splitting, wavelength division multiplexing (WDM), optical path changing, and switching of the signal. Photonic ICs may have multiple functions simultaneously in a single device, including the functions of emitting, receiving, and processing optical signals, and processing electronic signals.

[0088] In the present invention, by packaging a plurality of photonic IC (PIC) / electronic IC (EIC) devices in a 3D stacked structure, the length of signal wiring between devices is minimized, thereby realizing short signal lines and miniaturizing and implementing an integrated structure at the semiconductor package level.

[0089] In the following description of the present invention, the terms optical device package and optical system-in-package (O-SIP) are used interchangeably.

[0090] The attached drawings 1 to 3 are cross-sectional views showing an optical module having a 3D structure in which elements laminated between a PCB or substrate and a sealed optical element package according to the first to third embodiments of the present invention are positioned.

[0091] Referring to FIG. 1 below, an optical system-in-package (O-SIP) using semiconductor packaging according to a first embodiment of the present invention is described.

[0092] An optical system-in-package (O-SIP) (100) according to a first embodiment of the present invention includes an electronic IC (140) inside a mold body (110), and the mold body (110) has a first surface (upper surface) (112) and a second surface (lower surface) (114) that face each other and are flat. A redistribution layer (RDL) (120) including a plurality of external connection terminals (150) for external connection of the package is formed on the second surface (lower surface) (114) of the mold body (110).

[0093] When the O-SIP (100) according to the first embodiment of the present invention is used as a transmitter (Tx) of an optical module (300), an electronic IC (140) may be included inside the mold body (110), and a photonic IC (130) may be applied outside the mold body (110).

[0094] In addition, when the above O-SIP (100) is used as a receiver (Rx) of an optical module (300), both a photonic IC (130) and an electronic IC (140) can be included inside the mold body (110), and the photonic IC (130) can be applied outside the mold body (110).

[0095] The above photonic IC (130) may be an optical device including at least one of a light-emitting device, a light-receiving device, a chip that provides additional functions to the light-emitting device or the light-receiving device or is responsible for signal processing, and a PLC (Planar Lightwave Circuit).

[0096] In addition, the electronic IC (140) may be an electronic device including one of a driving circuit for driving the light-emitting element, a circuit for receiving an electric signal from the light-receiving element and amplifying and / or converting the signal, a laser diode driver (LD Driver) IC, a CDR (Clock Data Recovery), an equalizer, a TIA (TransImpedance Amplifier), I2C communication, and a DSP (Digital Signal Processing).

[0097] In this case, various materials including semiconductor materials such as GaAs, InGaAs, Si, SiN, Glass, Quartz, and SiON can be used as elements for the photonic IC (130), and various semiconductor materials such as Si, SiC, and SiGe can also be used as elements for the electronic IC (140). In order to mold the photonic IC (130) and the electronic IC (140), an encapsulating material such as an epoxy mold compound (EMC) or an epoxy resin can be used, and in the molding step, multiple cells can be molded at the wafer and panel levels at once.

[0098] The photonic IC (130) or electronic IC (140) sealed inside the mold body (110) may be a single or multiple elements, or a combination of optical elements and electronic elements.

[0099] In addition, the element sealed inside the mold body (110) may have a metal heat dissipation path formed by forming a heat dissipation layer (160) made of metal for heat dissipation of the element after the upper surface is opened.

[0100] Moreover, the pads (141, 142) of the electronic integrated circuit (EIC) (140) encapsulated inside the mold body (110) may be connected through a conductive pillar (121) or directly connected to the VIA of the redistribution layer (RDL) (120).

[0101] In this case, the conductive filler (121) may be a metal material having excellent conductivity, such as Cu, Au, W (tungsten), or a filler using an alloy thereof.

[0102] The above redistribution layer (RDL) (120) includes an external connection terminal (150), and the external connection terminal (150) may be formed of, for example, a BGA (Ball Grid Array), an LGA (Land Grid Array), a micro bump, etc.

[0103] In the above optical device package, i.e., O-SIP (100), a photonic IC (130) can be mounted by vertically stacking on the surface where the pads of the device are located inside the mold body (110). At this time, the photonic IC (130) stacked and connected may be a bare die or a packaged die.

[0104] In this case, the photonic IC (130) may include an optical lens (170) structure. The optical lens (170) may be configured to have, for example, a function of a collimating lens that allows light generated from the photonic IC (130) to travel a path that is close to parallel without being dispersed, or a focusing lens that focuses light on a single point.

[0105] As described above, the O-SIP (100) according to the first embodiment of the present invention integrates a photonic IC (130) and / or an electronic IC (140) without wire-bonding using a flip chip package technology, while simultaneously integrating elements without using a substrate (PCB) and increasing the number of input / output (I / O) terminals by pulling the input / output terminals outward, the so-called FOWLP (Fan Out Wafer Level Package) method, thereby completely resolving the height tolerance due to wiring between elements and implementing a slim O-SIP (100).

[0106] The above O-SIP (100) is a type of SiP (System In Package) technology that integrates photonic ICs (130) and electronic ICs (140) in a flip chip form without using a substrate such as a PCB, and configures a mold body (110) by packaging using a sealing material such as an epoxy mold compound (EMC) to fix the chip (die).

[0107] As a result, the mold body (110) safely protects the light engine module, which is packaged after integration, from impact. The O-SIP (100) having a photonic IC (130) and an electronic IC (140) inside the mold body (110) can constitute a light engine module.

[0108] In addition, the O-SIP (100) is manufactured using a semiconductor process on a wafer basis, and then a redistribution layer (120) including a plurality of external connection terminals (150) is integrally formed on the second surface (114) of the package, and a photonic IC (130) is mounted on the redistribution layer (120) by vertically stacking. At this time, the photonic IC (130) that is stacked and connected may be a bare die or a packaged die. Thereafter, the O-SIP (100) is obtained as a semiconductor package type through a dicing process for individually separating the O-SIP (100).

[0109] A redistribution layer (120) is formed on the second surface (lower surface) (114) of the mold body (110) formed by the above-mentioned sealing material, and the redistribution layer (120) includes an external connection terminal (150) of the package.

[0110] In order to form an insulating film for the above-mentioned redistribution layer (120), various materials of the polyimide, PMMA (poly(methylmethacrylate)), benzocyclobutene (BCB), silicon oxide (SiO2), acrylic, and epoxy series can be used, and a photolithography process can be used to form a wiring layer pattern.

[0111] In this case, the material of the wiring layer itself can act as a photoresist that can be developed, and the wiring layer can be etched after additional PR coating. After the insulating film is created, a process of depositing a metal is performed, and the metal used in the redistribution layer (120) can be formed of various metal materials such as Cu, Al, Au, Ag, or compounds thereof.

[0112] As shown in Fig. 1, when the O-SIP (100) is obtained and the O-SIP (100) is mounted on the main PCB (200) to form an optical module (300), if the optical input / output of the optical element used as the photonic IC (130) is positioned downward on the opposite side of the redistribution layer (120), a cavity or optical passage hole (210) is formed in the main PCB (200) to open an optical path (250).

[0113] In this case, the main PCB (200) may be formed with a transparent material, or the entire main PCB (200) may be manufactured without forming a light-transmitting hole (210) in the main PCB (200). The main PCB (200) may be a substrate used in a semiconductor package. The main PCB (200) and the O-SIP (100) may be connected through an external connection terminal (150). In addition, the connection between the main PCB (200) and the O-SIP (100) may be manufactured so that the O-SIP (100) can be detachably attached to the main PCB (200) by combining them using a socket structure or the like.

[0114] The types of optical elements used as the photonic IC (130) at this time may include, as described above, a chip manufactured using silicon photonics (SiPh; Si Photonics), a VCSEL (Vertical Cavity Surface Emitting Laser), a CIS (CMOS Image Sensor), an image sensor, and a photodiode (PD; Photodiode).

[0115] The above photonic IC (130) may have one or more functions among the functions of light emission, light reception, optical signal processing (modulation, wavelength division multiplexing (WDM), splitter, resonator, interferometer, isolator, switching, etc.), and electronic signal processing (driver, transimpedance amplifier (TIA), memory, logic).

[0116] For example, the element molded inside the semiconductor package may be a SiGe-based driver IC or a trans-impedance amplifier, and the element stacked may be a VCSEL array or a photodiode (PD) array.

[0117] In this case, the VCSEL or photodiode (PD) inputs and outputs light to the opposite side of the side where the pads (131, 132) are located, and a lens (170) structure can be formed on the side where the light is input and output.

[0118] In the first embodiment of the illustrated drawing 1, the photonic IC (130) to be laminated is laminated on the surface of the redistribution layer (120). As an example of the lamination method, an electrical connection is formed between the photonic IC (130) chip to be laminated and the O-SIP (100) package using solder. Alternatively, Cu-Cu bonding, Au-Au bonding, eutectic bonding, etc. may be used. To facilitate lamination, a structure such as a conductive pillar, such as a Cu pillar, may be present.

[0119] FIG. 2 is a cross-sectional view showing an optical module having a structure in which elements laminated between a main PCB or substrate and a sealed optical element package are positioned according to a second embodiment of the present invention.

[0120] Referring to FIG. 2, the O-SIP (100) according to the second embodiment of the present invention provides a structure in which the photonic IC (130) is stacked so that the pads (131, 132) of the photonic IC (130) are electrically connected to the wiring (125) while a part of the insulating layer is opened so that the wiring (125) embedded inside the rewiring layer (120) is exposed.

[0121] The O-SIP (100) according to the second embodiment of the present invention is configured by mounting the remaining O-SIP (100) and the O-SIP (100) on the main PCB (200) on the main PCB (200), except for the stacked structure of the photonic IC (130), and therefore, the description thereof is omitted.

[0122] In this case, the O-SIP (100) according to the second embodiment of the present invention has the effect of being able to adjust the height of the photonic IC (130), etc.

[0123] In the third embodiment illustrated in FIG. 3, after opening all of the redistribution layer (120) in the area where the photonic IC (130) is positioned as an optical element, the photonic IC (130) may be positioned by stacking the pads (131, 132) of the photonic IC (130) chip so that the pads (141, 142) of the electronic IC (140) chip molded inside the package of the O-SIP (100) are directly electrically connected.

[0124] The O-SIP (100) according to the third embodiment of the present invention is configured by mounting the remaining O-SIP (100) and the O-SIP (100) on the main PCB (200) on the main PCB (200), except for the stacked structure of the photonic IC (130), and therefore, the description thereof is omitted.

[0125] FIGS. 4 to 6 are cross-sectional views showing an optical module having a structure in which an electronic IC is positioned as a chip stacked between a main PCB or substrate and a sealed optical system-in-package (O-SIP), and the sealed photonic IC is a molded silicon photonics (SiPh) element through which light exits horizontally through the edge of the chip, according to the fourth to sixth embodiments of the present invention, respectively.

[0126] The optical module (300) according to the fourth embodiment illustrated in FIG. 4 may have an electronic IC (140) as the chip stacked on the lower portion of a sealed optical system-in-package (O-SIP) (101), and a photonic IC (130) as the chip molded inside the mold body (110) of the optical system-in-package (O-SIP) (101).

[0127] In addition, in the fourth embodiment, the photonic IC (130) chip to be molded may be, for example, a silicon photonics (SiPh; Si Photonics)-based modulator, and the electronic IC (140) chip to be stacked may be a driver IC or a transimpedance amplifier (TIA) device.

[0128] In this case, for the molded silicon photonics (SiPh) device, the light path direction (251) is horizontal and goes out through the edge of the silicon photonics (SiPh) chip.

[0129] The electronic IC (140) stacked on the lower portion of the optical system-in-package (O-SIP) (101) may be placed on the surface of the redistribution layer (120) as in the first embodiment illustrated in FIG. 1, or the electronic IC (140) may be stacked so that the pads (141, 142) of the electronic IC (140) are electrically connected to the wiring (125) while a portion of the insulating layer is opened so that the wiring (125) embedded in the interior of the redistribution layer (120) is exposed as in the second embodiment illustrated in FIG. 2.

[0130] In addition, the fourth embodiment illustrated in FIG. 4 can stack the electronic IC (140) so that the pads (141, 142) of the electronic IC (140) chip are directly electrically connected to the pads (131, 132) of the photonic IC (130) chip molded inside the package of the O-SIP (101) after opening all of the redistribution layer (120) in the area where the electronic IC (140) is located.

[0131] Moreover, as in the fourth embodiment, when the chip stacked on the lower part of the optical system-in-package (O-SIP) (101) is an electronic IC (140), since the optical path does not need to be formed through the main PCB (200), if the height allows, a cavity in the main PCB (200) may not be formed, or, as in an example not shown, only some layers of the main PCB layer may be cut out.

[0132] In the fifth embodiment illustrated in FIGS. 5a and 5b, an example is described in which an underfill is applied to the lower portion of a redistribution layer (120) of an optical system-in-package (O-SIP) (101).

[0133] In the fifth embodiment, an underfill bonding layer (180) is applied to the bottom of the optical system-in-package (O-SIP) (101) obtained according to the fourth embodiment, thereby securing higher reliability by protecting the bottom of the optical system-in-package (O-SIP) (101) using the underfill (180), and improving the bonding between the main PCB (200) and the optical element package (O-SIP) (101).

[0134] First, as shown in Fig. 5a, an underfill material layer can be formed in advance on a BGA (Ball Grid Array) bonding surface used to form an external connection terminal (150) of an optical system-in-package (O-SIP) (101). In this case, the underfill bonding layer (180) must be formed so that a portion of the BGA can be exposed.

[0135] Next, as shown in FIG. 5b, an optical system-in-package (O-SIP) (101) is soldered to the main PCB (200), and a BGA (Ball Grid Array) used as an external connection terminal (150) of the optical system-in-package (O-SIP) (101) is electrically connected to the conductive circuit pattern of the main PCB (200), after which an underfill material can be additionally applied.

[0136] In this case, the underfill bonding layer (180) may have a fillet shape around the optical system-in-package (O-SIP) (101). In addition, if the underfill material is made of a transparent material, an optical path can be formed even when the stacked element is a photonic IC (130), so the underfill can be applied.

[0137] An optical system-in-package (O-SIP) (101) according to a fifth embodiment of the present invention is the same as that of the fourth embodiment except that an underfill bonding layer (180) is applied to the bottom of the optical system-in-package (O-SIP) (101) obtained according to the fourth embodiment, and the optical module (300) in which the O-SIP (100) is mounted on a main PCB (200) is the same as that of the fourth embodiment, so a description thereof is omitted.

[0138] The sixth embodiment illustrated in FIG. 6 illustrates an example of an applicable heat dissipation structure.

[0139] An optical system-in-package (O-SIP) (101) according to a sixth embodiment of the present invention uses the optical system-in-package (O-SIP) (101) obtained according to the fourth embodiment described above.

[0140] According to the sixth embodiment of the present invention, an optical system-in-package (O-SIP) (101) can be formed so that a photonic IC (130) chip to be molded is directly connected to a metal layer or a layer that conducts heat well in order to apply a heat dissipation structure to the molded photonic IC (130) chip.

[0141] The optical system-in-package (O-SIP) (101) obtained according to the fourth embodiment described above has a metal heat dissipation layer (160) formed thereon to dissipate heat from the element after opening the upper surface of the element sealed inside the mold body (110) to secure a metal heat dissipation path.

[0142] The optical system-in-package (O-SIP) (101) according to the sixth embodiment of the present invention can be exposed by grinding the upper portion of the package in another way so that the heat dissipation layer (160) is exposed. Thereafter, a heat sink block (190) can be mounted on the upper surface of the exposed heat dissipation layer (160) to secure a metal heat dissipation path.

[0143] At this time, if it is necessary to increase heat dissipation efficiency, a thermal interface material (TIM) (192) can be used to connect the light engine, i.e., the light system-in-package (O-SIP) (101), and the heat sink block (190).

[0144] In addition, in the sixth embodiment, when the stacked chip is an electronic IC (140), a heat sink block (191) can be connected to the electronic IC (140). In this case, the heat sink block (191) can be connected to the electronic IC (140) by passing through a through hole (220) formed in correspondence with the electronic IC (140) in the main PCB (200).

[0145] In this case, the electronic IC (140), which is a stacked chip, and the heat sink block (191) can be connected using TIM (Thermal Interface Material) (193).

[0146] At this time, the TIM (Thermal Interface Material) (192, 193) may be a silver epoxy, thermal grease, or film type TIM (Thermal Interface Material).

[0147] The heat dissipation structure using the above heat sink block (190, 191) has been described with reference to the sixth embodiment shown in FIG. 6, but the heat dissipation structure can be equally applied to the first to fifth embodiments described above.

[0148] In addition, the concept of securing a metal heat dissipation path by mounting a heat sink block (190) on the upper surface of the heat dissipation layer (160) can be equally applied to the 7th and 8th embodiments described below.

[0149] FIG. 7 is a cross-sectional view showing an example of an optical module in which an electronic IC is encapsulated inside a mold body and a photonic IC is vertically stacked on a redistribution layer, and an optical system-in-package (O-SIP) is mounted on a main printed circuit board (PCB) or substrate according to a seventh embodiment of the present invention, and a transparent window chip is packaged by penetrating inside the mold body when the light path direction is perpendicular to the surface with the pad.

[0150] Referring to FIG. 7, an optical system-in-package (O-SIP) (102) according to a seventh embodiment of the present invention has a structure in which an electronic IC (140) is sealed inside a mold body (110) and a photonic IC (130) is vertically stacked on the surface of a redistribution layer (120), and the optical system-in-package (O-SIP) (102) is mounted on a main printed circuit board (PCB) (200) or substrate to form an optical module (300).

[0151] An optical system-in-package (O-SIP) (102) according to a seventh embodiment of the present invention is an example of a packaging method for a case where the optical path direction (252) of a stacked photonic IC (130) chip is perpendicular to a surface on which pads (131, 132) are located.

[0152] As in the seventh embodiment, in the case of an optical system-in-package (O-SIP) (102) in which the optical path direction (252) of the stacked photonic IC (130) is perpendicular to the surface on which the pads (131, 132) are located, a transparent window chip (260) is packaged by penetrating the inside of the mold body (110).

[0153] In the seventh embodiment, the optical path of the photonic IC (PIC) (130) vertically stacked on the surface of the redistribution layer (120) must pass through the optical system-in-package (O-SIP) (102) and form an optical path inside the mold body (110) structure.

[0154] At this time, the optical path of the photonic IC (PIC) (130) must be positioned so that it passes next to the electronic IC (140) molded inside the mold body (110), and the photonic IC (PIC) (130) and the electronic IC (140) chip inside the mold body (110) must be electrically connected through the redistribution layer (120).

[0155] The optical path forming method includes including a transparent window chip (260) in the same manner as the seventh embodiment of FIG. 7, in which the window chip (260) is packaged inside the mold body (110). At this time, the upper and lower surfaces of the window chip (260) must penetrate the mold body (110). At this time, the material of the window chip (260) may be glass, quartz, or heat-strengthened plastic.

[0156] Another method of forming an optical path may be to form a cavity in the corresponding part of the mold body (110) using a method such as laser drilling.

[0157] Another method of forming an optical path may be to use a transparent material as the material of the mold body (110).

[0158] FIG. 8 is a cross-sectional view showing an example of an optical module in which an electronic IC is encapsulated inside a mold body and a photonic IC is vertically stacked on a redistribution layer, and an optical system-in-package (O-SIP) is mounted on a main printed circuit board (PCB) or substrate, according to an eighth embodiment of the present invention, and an optical component (lens) capable of changing an optical path is included in a window chip.

[0159] Referring to FIG. 8, an optical system-in-package (O-SIP) (102) according to an eighth embodiment of the present invention has a structure in which an electronic IC (140) is sealed inside a mold body (110) and a photonic IC (130) is vertically stacked on the surface of a redistribution layer (120), and the optical system-in-package (O-SIP) (102) is mounted on a main printed circuit board (PCB) (200) or substrate to form an optical module (300).

[0160] An optical system-in-package (O-SIP) (102) according to an eighth embodiment of the present invention is an example of a packaging method for a case where the optical path direction of a stacked photonic IC (130) chip is perpendicular to a surface on which pads (131, 132) are present.

[0161] In addition, the optical system-in-package (O-SIP) (102) according to the eighth embodiment has an optical component (171) having a function of changing the optical path formed at the tip of the window chip (261) unlike the seventh embodiment.

[0162] The above optical component (171) may have, for example, a lens structure capable of collimating light coming from a stacked photonic IC (130).

[0163] Although the present invention has been described and illustrated with specific preferred embodiments as examples, the present invention is not limited to the above embodiments, and various changes and modifications may be made by a person having ordinary skill in the art to which the invention pertains within a scope that does not depart from the spirit of the present invention.

[0164] The optical system-in-package (O-SIP) of the present invention includes a photonic IC and / or an electronic IC within a package using optical FOWLP, and the photonic IC or the electronic IC can be stacked on a redistribution layer, and can be applied to an optical module and an optical transceiver.

[0165] The present invention relates to a method for implementing an optical system-in-package (O-SIP), which integrates a system using a photonic IC into a single package. This can be widely used in the optical communications and optical sensor industries. For optical communications, it can be used for communication between servers within a data center and for optical transceivers for 5G and 6G communication networks.

[0166] In addition, since the optical system-in-package (O-SIP) of the present invention has achieved miniaturization and integration within the package, it can also be used for on-board optical communication and chip-to-chip optical communication.

Claims

1. A mold body having flat first and second surfaces on the lower and upper portions; An electronic IC molded inside the mold body so that the pad is exposed on the second surface: A rewiring layer formed on the second surface of the mold body and having a wiring for connecting to the pad of the electronic IC and having an external connection terminal for electrically connecting to the outside from the wiring; and An optical system-in-package (O-SIP) comprising a photonic IC vertically stacked on the lower side of the above-described redistribution layer and having pads connected to the above-described wiring to transmit or receive an optical signal.

2. In paragraph 1, An optical system-in-package (O-SIP) in which the pads of the device are vertically stacked on the lower portion of the above redistribution layer and are directly connected to the wiring of the above redistribution layer.

3. In paragraph 1, An optical system-in-package (O-SIP) in which the pads of the elements vertically stacked on the lower portion of the above-mentioned redistribution layer are directly connected to the pads of the elements molded inside the above-mentioned mold body.

4. In paragraph 1, An optical system-in-package (O-SIP) in which the pads of the molded elements inside the mold body are connected to the wiring of the redistribution layer through a conductive filler.

5. In paragraph 1, An optical system-in-package (O-SIP) further comprising a transparent window chip that penetrates the inside of the mold body and is packaged when the optical path direction of the photonic IC chip is perpendicular to the surface where the pad is located.

6. In paragraph 1, The above photonic IC is a bare die or a packaged die, an optical system-in-package (O-SIP).

7. A mold body having flat first and second surfaces on the lower and upper portions; A photonic IC molded inside the mold body so that the pad is exposed on the second surface and light is emitted horizontally through the edge of the chip; A rewiring layer formed on the second surface of the mold body and having a wiring for connecting to the pad of the photonic IC and having an external connection terminal for electrically connecting to the outside from the wiring; and An optical system-in-package (O-SIP) comprising an electronic IC that is vertically stacked on the lower side of the rewiring layer and has pads connected to the wiring to drive or interface the photonic IC.

8. In paragraph 7, The above photonic IC is an optical system-in-package (O-SIP) that includes at least one of a light-emitting element, a light-receiving element, a chip that provides additional functions to the light-emitting element or the light-receiving element or is responsible for signal processing, and a PLC (Planar Lightwave Circuit).

9. In paragraph 7, An optical system-in-package (O-SIP) further comprising a heat dissipation layer formed on the upper surface of a molded element inside the mold body to dissipate heat to the outside of the mold body.

10. In paragraph 9, It further includes an optical component that is provided at the tip of the above window chip and can change the optical path. The above optical component is an optical system-in-package (O-SIP) composed of a lens for collimating light coming from the photonic IC.

11. An optical system-in-package (O-SIP) including an electronic IC molded inside a mold body having flat first and second surfaces on the lower and upper sides, a rewiring layer formed on the second surface of the mold body, having wiring for connecting to the electronic IC, and an external connection terminal for electrically connecting to the outside, and vertically stacked on the lower surface of the rewiring layer, and a photonic IC that transmits or receives an optical signal while being connected to the wiring; and A main printed circuit board (PCB) having the optical system-in-package (O-SIP) mounted on the upper surface; The above main printed circuit board (PCB) is an optical module including a through hole that forms an optical path when generating or receiving an optical signal in a vertical direction from the photonic IC in a portion corresponding to the optical input / output portion of the photonic IC.

12. In paragraph 11, The above photonic IC is an optical module that is a bare die or a packaged die.

13. An optical system-in-package (O-SIP) including a photonic IC that emits light horizontally through the edge of the chip molded inside a mold body having flat first and second surfaces on the lower and upper sides, and formed on the second surface of the mold body, and having wiring for connecting to the photonic IC and an external connection terminal for electrically connecting to the outside, and vertically stacked on the lower side of a redistribution layer, and an electronic IC connected to the wiring to drive or interface the photonic IC; and A main printed circuit board (PCB) having the optical system-in-package (O-SIP) mounted on the upper surface; The above photonic IC is an optical module that is a silicon photonics (SiPh) chip having a waveguide through which an optical signal is input or output and an optical signal processing unit that processes the optical signal.

14. In paragraph 13, The above main printed circuit board (PCB) includes a through hole corresponding to the electronic IC, An optical module further comprising a heat sink block installed on the exposed lower surface of the electronic IC to dissipate heat generated from the electronic IC.

15. In paragraph 13, An optical module further comprising an underfill bonding layer filled to supplement bonding between the redistribution layer of the optical system-in-package (O-SIP) and the main printed circuit board (PCB) while the external connection terminal of the redistribution layer is electrically connected to the conductive circuit pattern of the main PCB.

Images