Joining system and joining method

Abstract

This joining system comprises: a first joining device that separates a plurality of first dies from a first carrier and joins the first dies to a target substrate; and a second joining device that separates a plurality of second dies from a second carrier and joins the second dies to the target substrate. The first carrier has a carrier substrate and a resin film provided on the carrier substrate, and the plurality of first dies are mounted on the resin film. The second carrier has a frame and a tape covering an opening of the frame, and the plurality of second dies are mounted on the tape.

Description

Joining system and joining method

[0001] The present disclosure relates to joining systems and joining methods.

[0002] The chip mounting system described in Patent Document 1 includes a chip supply device, a bonding device, a surface treatment device, a carry-in / out unit, and a transport unit (paragraph

[0225] of Patent Document 1). The chip supply device supplies multiple chips individually. The chips are attached to tape covering an opening of a frame, and are pushed up one by one and turned upside down (paragraph

[0251] of Patent Document 1). The bonding device attaches the chips supplied from the chip supply device to a substrate.

[0003] Japanese Patent No. 6337400

[0004] One embodiment of the present disclosure provides a technique for efficiently bonding a first die and a second die to a target substrate.

[0005] A bonding system according to an embodiment of the present disclosure includes a first bonding device configured to separate a plurality of first dies from a first carrier and bond them to a target substrate, and a second bonding device configured to separate a plurality of second dies from a second carrier and bond them to the target substrate. The first carrier includes a carrier substrate and a resin film provided on the carrier substrate, and the first dies are mounted on the resin film. The second carrier includes a frame and a tape covering an opening of the frame, and the second dies are mounted on the tape.

[0006] According to an embodiment of the present disclosure, the first die and the second die can be efficiently bonded to the target substrate.

[0007] FIG. 1 is a plan view showing a bonding system according to an embodiment. FIG. 2 is a cross-sectional view showing an example of a target substrate before bonding a first die and a second die. FIG. 3 is a cross-sectional view showing an example of a target substrate after bonding a first die and a second die. FIG. 4 is a cross-sectional view showing an example of a first carrier with a first die attached. FIG. 5 is a cross-sectional view showing an example of a second carrier with a second die attached. FIG. 6 is a flowchart showing a bonding method according to an embodiment. FIG. 7 is a flowchart showing an example of a process subsequent to FIG. 6. FIG. 8 is a plan view showing a bonding system according to a first modified example. FIG. 9 is a plan view showing a bonding system according to a second modified example. FIG. 10 is a plan view showing a bonding system according to a third modified example.

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that in each drawing, the same or similar components are denoted by the same reference numerals, and descriptions thereof may be omitted. In this specification, the X-axis direction, Y-axis direction, and Z-axis direction are perpendicular to each other. The X-axis direction and Y-axis direction are horizontal directions, and the Z-axis direction is vertical. The X-axis direction includes the positive X-axis direction and the negative X-axis direction that is opposite to the positive X-axis direction. The Y-axis direction includes the positive Y-axis direction and the negative Y-axis direction that is opposite to the positive Y-axis direction. The Z-axis direction includes the positive Z-axis direction and the negative Z-axis direction that is opposite to the positive Z-axis direction.

[0009] 1 to 5, a bonding system 1 according to one embodiment will be described. The bonding system 1 separates a plurality of first dies D1 from a first carrier A1 and bonds them to a target substrate W. The bonding system 1 also separates a plurality of second dies D2 from a second carrier A2 and bonds them to the target substrate W. The bonding system 1 bonds the first dies D1 and the second dies D2 to one side of the target substrate W.

[0010] As shown in Fig. 2, the target substrate W includes a semiconductor substrate W1 such as a silicon wafer and a plurality of devices W2 formed on the semiconductor substrate W1. The devices W2 are partitioned by a plurality of streets that intersect with each other at right angles. Each device W2 includes an electronic circuit. Each device W2 is formed on a bonding surface Wa.

[0011] 3, a first die D1 and a second die D2 are bonded to each device W2. Then, the target substrate W is cut along the streets to separate the devices W2, thereby obtaining a plurality of semiconductor devices. Each semiconductor device includes the device W2, the first die D1, and the second die D2.

[0012] Of the first die D1 and the second die D2, the target substrate W is preferably electrically connected only to the first die D1. The second die D2, which will be described in detail later, is preferably not electrically connected to the target substrate W. However, the second die D2 may also be electrically connected to the target substrate W.

[0013] The first die D1 is singulated on the tape and then transferred to a first carrier A1, which has higher durability than the tape. The first die D1 may be inspected before the transfer. With the first die D1 mounted on the first carrier A1, pre-processing (steps S104 to S106, which will be described later) is performed on the bonding surface D1a of the first die D1.

[0014] After being singulated on the tape A2b of the second carrier A2, the second die D2 is directly subjected to pre-processing (steps S108 to S110 described later) without being transferred to another carrier. Even if the tape A2b is deteriorated by the pre-processing and organic matter contamination of the second die D2 occurs, the quality of the semiconductor device is hardly degraded as long as the second die D2 does not have an electronic circuit.

[0015] As described above, the second die D2 is singulated on the tape A2b of the second carrier A2, and then is directly subjected to pre-processing (steps S108 to S110 described later) without being transferred to another carrier. This reduces the labor required for transfer, and allows the first die D1 and the second die D2 to be efficiently bonded to the target substrate W.

[0016] The second die D2 may have an electronic circuit. Even if the second die D2 has an electronic circuit, the second die D2 may be subjected to pre-processing while attached to the second carrier A2. In this case, too, the labor required for transfer can be reduced, and the first die D1 and the second die D2 can be efficiently bonded to the target substrate W.

[0017] Either the first die D1 or the second die D2 may be bonded to the target substrate W first, but it is preferable to bond the first die D1 to the target substrate W before the second die D2. The electronic circuit of the first die D1 and the electronic circuit of the target substrate W can be electrically connected in an environment free from organic contamination, thereby preventing deterioration in the quality of the semiconductor device.

[0018] 4, the first carrier A1 is used to transport the first die D1. The first carrier A1 has a carrier substrate A1a and a resin film A1b provided on the carrier substrate A1a, and multiple first dies D1 are mounted on the resin film A1b. The first carrier A1 preferably holds the first die D1 with the bonding surface D1a of the first die D1 facing upward.

[0019] The first carrier A1 electrostatically attracts the first die D1. By pressing the first die D1 against the resin film A1b, the resin film A1b can be deformed to remove gas from between the first die D1 and the resin film A1b, and the first die D1 can be vacuum-attached to the resin film A1b. The first carrier A1 can also attract the first die D1 by intermolecular force.

[0020] The carrier substrate A1a may be conductive or insulating. Through holes A1c are formed in the carrier substrate A1a, penetrating the carrier substrate A1a in the thickness direction. The first die D1 can be separated from the first carrier A1 by supplying gas to the through holes A1c or inserting pins (not shown) into the through holes A1c. The number and arrangement of the through holes A1c are not particularly limited. One or more through holes A1c may be formed for each first die D1.

[0021] The carrier substrate A1a is preferably made of a rigid material. For example, the carrier substrate A1a is preferably made of silicon (Si), ceramic, aluminum, an aluminum alloy, stainless steel, zirconia, silicon carbide (SiC), titanium, or glass. The carrier substrate A1a may have a diameter similar to that of the target substrate W. The carrier substrate A1a may also have a thickness similar to that of the target substrate W.

[0022] The resin film A1b is preferably made of a flexible material, specifically a material with an elastic modulus of 2 GPa or less, more preferably 0.5 GPa or less. From the viewpoint of durability during modification of the bonding surface of the first die D1, the resin film A1b is preferably made of, for example, polyimide or EVA (ethylene-vinyl acetate copolymer). The thickness of the resin film A1b is, for example, 10 μm. In this embodiment, the resin film A1b is a single layer, but may be multiple layers. For example, the resin film A1b may have a polyolefin layer and an acrylic adhesive layer.

[0023] The first carrier A1 preferably has the same diameter as the target substrate W. The target substrate W and the first carrier A1 can use the same model number of apparatus (for example, transport apparatus, cleaning apparatus, modification apparatus, hydrophilization apparatus).

[0024] 5, the second carrier A2 is used to transport the second die D2. The second carrier A2 has a frame A2a and a tape A2b that covers the opening of the frame A2a, and multiple second dies D2 are mounted on the tape A2b. The second carrier A2 preferably holds the second dies D2 with the bonding surface D2a of the second dies D2 facing upward.

[0025] The second carrier A2 is also used for singulating the second dies D2 and therefore preferably has a larger diameter than the target substrate W. The second dies D2 are obtained, for example, by singulating a semiconductor substrate having the same diameter as the target substrate W.

[0026] 1, the bonding system 1 includes, for example, a first cluster 1A and a second cluster 1B. The first cluster 1A separates a plurality of first dies D1 from a first carrier A1 and bonds them to a target substrate W. The second cluster 1B separates a plurality of second dies D2 from a second carrier A2 and bonds them to a target substrate W. The first cluster 1A and the second cluster 1B will be described below in this order.

[0027] The first cluster 1A includes, in a line in this order, a first loading / unloading station 2, a first pre-treatment station 3, and a first joining station 4. The first cluster 1A further includes a first control circuit 9A.

[0028] The first carry-in / out station 2 includes a mounting table 20. A first cassette C1, a second cassette C2, a third cassette C3, and a fourth cassette C4 are mounted on the mounting table 20. The first cassette C1 accommodates target substrates W before the first die D1 and the second die D2 are bonded together. The second cassette C2 accommodates target substrates W after the first die D1 has been bonded together but before the second die D2 is bonded together. The third cassette C3 accommodates the first carrier A1 with the first die D1 attached. The fourth cassette C4 accommodates the first carrier A1 from which the first die D1 has been separated.

[0029] The first loading / unloading station 2 includes a transfer area 21 and a transfer device 22. The transfer area 21 is adjacent to the mounting table 20. The transfer area 21 extends in the Y-axis direction. The transfer device 22 has a transfer arm. The transfer arm holds and transfers the target substrate W and the first carrier A1 in the transfer area 21. The number of transfer arms may be one or more. The transfer arm for the target substrate W and the transfer arm for the first carrier A1 may be provided separately. The transfer device 22 has a drive unit (not shown) that moves or rotates the transfer arm. The transfer arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction) and rotating about the vertical axis.

[0030] The first pre-processing station 3 includes a storage device 30. The storage device 30 is adjacent to the transfer area 21. The storage device 30 is disposed on the opposite side of the transfer area 21 from the mounting table 20. The storage device 30 temporarily stores the target substrates W and the first carriers A1. The storage device 30 has a plurality of stages arranged vertically. Each stage holds a target substrate W and a first carrier A1. The stage for the target substrates W and the stage for the first carrier A1 may be provided separately.

[0031] The first pre-processing station 3 includes a transfer area 31 and a transfer device 32. The transfer area 31 is adjacent to the storage device 30 and extends from the storage device 30 in the positive direction of the X-axis. The transfer device 32 has a transfer arm. The transfer arm holds and transfers the target substrate W and the first carrier A1 in the transfer area 31. The number of transfer arms may be one or more. The transfer arm for the target substrate W and the transfer arm for the first carrier A1 may be provided separately. The transfer device 32 has a drive unit (not shown) that moves or rotates the transfer arm. The transfer arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction) and rotating about the vertical axis.

[0032] The first pre-treatment station 3 includes a first cleaning device 33, a first modifying device 34, a first hydrophilizing device 35, a second cleaning device 36, a second modifying device 37, and a second hydrophilizing device 38. The first cleaning device 33, the first modifying device 34, the first hydrophilizing device 35, the second cleaning device 36, the second modifying device 37, and the second hydrophilizing device 38 are adjacent to the transport region 31 and are provided on the positive Y-axis side or the negative Y-axis side of the transport region 31.

[0033] The first cleaning device 33 cleans the bonding surface Wa of the target substrate W with a cleaning liquid. If the bonding surface Wa is covered with a protective film, the cleaning liquid removes the protective film. The cleaning liquid may be acidic or alkaline. The cleaning liquid may also be pure water (e.g., deionized water).

[0034] The first modifying device 34 modifies the bonding surface Wa of the target substrate W with plasma. In the first modifying device 34, oxygen gas, which is a processing gas, is excited under reduced pressure, for example, to form plasma and is ionized. The bonding surface Wa is activated by being irradiated with oxygen ions. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas.

[0035] The first hydrophilization device 35 hydrophilizes the bonding surface Wa of the target substrate W. For example, the first hydrophilization device 35 supplies pure water (e.g., deionized water) to the bonding surface Wa while rotating the target substrate W held by the spin chuck. The pure water imparts OH groups to the bonding surface Wa, which has been previously modified by plasma. The first die D1 and the target substrate W can be bonded together by utilizing hydrogen bonds between the OH groups.

[0036] The second cleaning device 36 cleans the bonding surface D1a of the first die D1 with a cleaning liquid while the first carrier A1 is holding the first die D1. If the bonding surface D1a is covered with a protective film, the cleaning liquid removes the protective film. The cleaning liquid may be acidic or alkaline. The cleaning liquid may also be pure water (e.g., deionized water).

[0037] The second reforming device 37 reforms the bonding surface D1a of the first die D1 with plasma while the first carrier A1 is mounted with the first die D1. In the second reforming device 37, oxygen gas, which is a processing gas, is excited to form plasma and ionized under reduced pressure, for example. The bonding surface D1a is activated by being irradiated with oxygen ions. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas.

[0038] The second hydrophilization device 38 hydrophilizes the bonding surface D1a of the first die D1 while the first carrier A1 is holding the first die D1. For example, the second hydrophilization device 38 supplies pure water (e.g., deionized water) to the bonding surface D1a while rotating the first carrier A1 held by the spin chuck. The pure water imparts OH groups to the bonding surface D1a, which has been previously modified by plasma. The first die D1 and the target substrate W can be bonded together by utilizing hydrogen bonds between the OH groups.

[0039] The first bonding station 4 includes a storage device 40. The storage device 40 is adjacent to the transport area 31. The storage device 40 is arranged on the opposite side of the storage device 30 with respect to the transport area 31. The storage device 40 temporarily stores the target substrates W and the first carriers A1. The storage device 40 has a plurality of stages arranged vertically. Each stage holds at least one of the target substrates W and the first carriers A1. The stage for the target substrates W and the stage for the first carriers A1 may be provided separately.

[0040] The first bonding station 4 includes a transfer area 41 and a transfer device 42. The transfer area 41 is adjacent to the storage device 40 and extends from the storage device 40 in the positive direction of the X-axis. The transfer device 42 has a transfer arm. The transfer arm holds and transfers the target substrate W and the first carrier A1 in the transfer area 41. The number of transfer arms may be one or more. The transfer arm for the target substrate W and the transfer arm for the first carrier A1 may be provided separately. The transfer device 42 has a drive unit (not shown) that moves or rotates the transfer arm. The transfer arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction) and rotating about the vertical axis.

[0041] The first bonding station 4 includes an annealing device 43 and a first bonding device 44. The annealing device 43 and the first bonding device 44 are adjacent to the transfer region 41 and are provided on the positive Y-axis side, negative Y-axis side, or positive X-axis side of the transfer region 41. The annealing device 43 heats the first die D1 while the first carrier A1 is holding the first die D1, thereby removing residual stress in the first die D1. The first bonding device 44 separates the first die D1 from the first carrier A1 and bonds the first die D1 to the target substrate W by orienting the bonding surface D1a of the separated first die D1 toward the bonding surface Wa of the target substrate W.

[0042] The first control circuit 9A is, for example, a computer. The first control circuit 9A includes an arithmetic unit 91A such as a CPU (Central Processing Unit) and a storage unit 92A such as a memory. The storage unit 92A stores programs that control various processes executed in the first cluster 1A. The first control circuit 9A controls the operation of the first cluster 1A by having the arithmetic unit 91A execute the programs stored in the storage unit 92A. A lower-level control circuit that controls the operation of each device constituting the first cluster 1A may be provided, and a higher-level control circuit that controls the multiple lower-level control circuits may be provided. The first control circuit 9A may be configured with multiple lower-level control circuits and the higher-level control circuit.

[0043] The first control circuit 9A includes electronic circuits such as a CPU, a GPU (Graphics Processing Unit), an FPGA (Field Programmable Gate Array), or an ASIC (Application Specific Integrated Circuit), and performs the various control operations described in this specification by executing instruction codes stored in a memory or by being a circuit designed for a specific application.

[0044] Next, a bonding method according to one embodiment will be described with reference to Fig. 6. The process of Fig. 6 is performed under the control of the first control circuit 9A. First, the transfer device 22 removes the target substrate W from the first cassette C1 and transfers it to the storage device 30. Next, the transfer device 32 removes the target substrate W from the storage device 30 and transfers it to the first cleaning device 33.

[0045] Next, the first cleaning device 33 cleans the bonding surface Wa of the target substrate W with a cleaning liquid (step S101). Thereafter, the transport device 32 removes the target substrate W from the first cleaning device 33 and transports it to the first modifying device .

[0046] Next, the first modifying device 34 modifies the bonding surface Wa of the target substrate W with plasma (step S102). Thereafter, the transport device 32 removes the target substrate W from the first modifying device 34 and transports it to the first hydrophilizing device 35.

[0047] Next, the first hydrophilizing device 35 hydrophilizes the bonding surface Wa of the target substrate W (step S103). Thereafter, the transport device 32 removes the target substrate W from the first hydrophilizing device 35 and transports it to the storage device 40. Subsequently, the transport device 42 removes the target substrate W from the storage device 40 and transports it to the first bonding device 44.

[0048] In parallel with the above steps S101 to S103, the following steps S104 to S106 are performed. First, the transport device 22 removes the first carrier A1 from the third cassette C3 and transports it to the storage device 30. Next, the transport device 32 removes the first carrier A1 from the storage device 30 and transports it to the second cleaning device 36.

[0049] Next, the second washing device 36 washes the bonding surface D1a of the first die D1 with a washing liquid while the first carrier A1 is mounted with the first die D1 (step S104). After that, the transport device 32 removes the first carrier A1 from the second washing device 36 and transports it to the second modifying device 37.

[0050] Next, the second modifying device 37 modifies the bonding surface D1a of the first die D1 with plasma while the first carrier A1 is attached to the first die D1 (step S105). After that, the transport device 32 removes the first carrier A1 from the second modifying device 37 and transports it to the second hydrophilization device 38.

[0051] Next, the second hydrophilization device 38 hydrophilizes the bonding surface D1a of the first die D1 while the first carrier A1 is mounted with the first die D1 (step S106). The transport device 32 then removes the first carrier A1 from the second hydrophilization device 38 and transports it to the storage device 40. The transport device 42 then removes the first carrier A1 from the storage device 40 and transports it to the annealing device 43. The annealing device 43 heats the first die D1 while the first carrier A1 is mounted with the first die D1 to remove residual stress from the first die D1. The transport device 42 then removes the first carrier A1 from the annealing device 43 and transports it to the first bonding device 44.

[0052] Next, the first bonding device 44 separates the first die D1 from the first carrier A1 and bonds the first die D1 to the target substrate W by facing the bonding surface D1a of the separated first die D1 toward the bonding surface Wa of the target substrate W (step S107).

[0053] After the first die D1 is bonded, the target substrate W is transported to the second cassette C2. First, the transport device 42 removes the target substrate W from the first bonding device 44 and transports it to the storage device 40. Next, the transport device 32 removes the target substrate W from the storage device 40 and transports it to the storage device 30. Finally, the transport device 22 removes the target substrate W from the storage device 30 and stores it in the second cassette C2.

[0054] The first carrier A1, from which the first die D1 has been separated, is stored in the fourth cassette C4. First, the transport device 42 removes the first carrier A1 from the first joining device 44 and transports it to the storage device 40. Next, the transport device 32 removes the first carrier A1 from the storage device 40 and transports it to the storage device 30. Finally, the transport device 22 removes the first carrier A1 from the storage device 30 and stores it in the fourth cassette C4.

[0055] 1, the second cluster 1B includes a second loading / unloading station 6, a second pre-treatment station 7, and a second bonding station 8, arranged in this order. The second cluster 1B further includes a second control circuit 9B.

[0056] The second carry-in / out station 6 includes a mounting table 60. The mounting table 60 mounts a second cassette C2, a fifth cassette C5, a sixth cassette C6, and a seventh cassette C7. The second cassette C2 accommodates a target substrate W to which the first die D1 has been bonded but before the second die D2 has been bonded. The fifth cassette C5 accommodates a target substrate W to which the first die D1 and the second die D2 have been bonded. The sixth cassette C6 accommodates a second carrier A2 to which the second die D2 has been attached. The seventh cassette C7 accommodates a second carrier A2 from which the second die D2 has been separated.

[0057] The second loading / unloading station 6 includes a transfer area 61 and a transfer device 62. The transfer area 61 is adjacent to the mounting table 60. The transfer area 61 extends in the Y-axis direction. The transfer device 62 has a transfer arm. The transfer arm holds and transfers the target substrate W and the second carrier A2 in the transfer area 61. The number of transfer arms may be one or more. The transfer arm for the target substrate W and the transfer arm for the second carrier A2 may be provided separately. The transfer device 62 has a drive unit (not shown) that moves or rotates the transfer arm. The transfer arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction) and rotating about the vertical axis.

[0058] The second pre-processing station 7 includes a storage device 70. The storage device 70 is adjacent to the transfer area 61. The storage device 70 is disposed on the opposite side of the transfer area 61 from the mounting table 60. The storage device 70 temporarily stores the target substrates W and the second carrier A2. The storage device 70 has a plurality of stages arranged vertically. Each stage mounts a target substrate W and the second carrier A2. The stage for the target substrates W and the stage for the second carrier A2 may be provided separately.

[0059] The second pre-processing station 7 includes a transfer area 71 and a transfer device 72. The transfer area 71 is adjacent to the storage device 70 and extends from the storage device 70 in the positive direction of the X-axis. The transfer device 72 has a transfer arm. The transfer arm holds and transfers the target substrate W and the second carrier A2 in the transfer area 71. The number of transfer arms may be one or more. The transfer arm for the target substrate W and the transfer arm for the second carrier A2 may be provided separately. The transfer device 72 has a drive unit (not shown) that moves or rotates the transfer arm. The transfer arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction) and rotating about the vertical axis.

[0060] The second pre-treatment station 7 includes a third cleaning device 73, a third modifying device 74, and a third hydrophilizing device 75. The third cleaning device 73, the third modifying device 74, and the third hydrophilizing device 75 are adjacent to the transport region 71 and are provided on the positive Y-axis side or the negative Y-axis side of the transport region 71.

[0061] The third cleaning device 73 cleans the bonding surface D2a of the second die D2 with a cleaning liquid while the second carrier A2 is carrying the second die D2. If the bonding surface D2a is covered with a protective film, the cleaning liquid removes the protective film. The cleaning liquid may be acidic or alkaline. The cleaning liquid may deteriorate the tape A2b and cause organic contamination of the second die D2. However, even if organic contamination of the second die D2 occurs, the quality of the semiconductor device is hardly degraded because the second die D2 does not have an electronic circuit. The cleaning liquid may be pure water (e.g., deionized water).

[0062] The first carrier A1 has better durability against cleaning liquid than the second carrier A2, and when the second cleaning device 36 cleans the bonding surface D1a of the first die D1 with cleaning liquid, the first die D1 is hardly contaminated with organic matter. The first die D1 has an electronic circuit. In order to suppress organic contamination of the electronic circuit and obtain a high-quality semiconductor device, it is important to singulate the first die D1 on the tape and then transfer it to the first carrier A1, which has higher durability than the tape.

[0063] The third modifying device 74 modifies the bonding surface D2a of the second die D2 with plasma while the second carrier A2 is holding the second die D2. In the third modifying device 74, oxygen gas, which is a processing gas, is excited to plasma and ionized under reduced pressure, for example. The oxygen ions are irradiated onto the bonding surface D2a, thereby activating the bonding surface D2a. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas. The plasma may deteriorate the tape A2b and cause organic contamination of the second die D2. However, even if organic contamination of the second die D2 occurs, the quality of the semiconductor device is hardly degraded because the second die D2 does not have an electronic circuit.

[0064] The first carrier A1 has better plasma durability than the second carrier A2, and when the second modifying device 37 modifies the bonding surface D1a of the first die D1 with plasma, the first die D1 is hardly contaminated with organic matter. The first die D1 has an electronic circuit. To suppress organic contamination of the electronic circuit and obtain a high-quality semiconductor device, it is important to singulate the first die D1 on tape and then transfer it to the first carrier A1, which has higher durability than tape.

[0065] The third hydrophilization device 75 hydrophilizes the bonding surface D2a of the second die D2 while the second carrier A2 is holding the second die D2. For example, the third hydrophilization device 75 supplies pure water (e.g., deionized water) to the bonding surface D2a while rotating the second carrier A2 held by the spin chuck. The pure water imparts OH groups to the bonding surface D2a, which has been previously modified by plasma. The second die D2 and the target substrate W can be bonded using hydrogen bonding between the OH groups.

[0066] The second bonding station 8 includes a storage device 80. The storage device 80 is adjacent to the transport area 71. The storage device 80 is arranged on the opposite side of the storage device 70 with respect to the transport area 71. The storage device 80 temporarily stores the target substrates W and the second carriers A2. The storage device 80 has a plurality of stages arranged vertically. Each stage holds at least one of the target substrates W and the second carriers A2. The stage for the target substrates W and the stage for the second carriers A2 may be provided separately.

[0067] The second bonding station 8 includes a transfer area 81 and a transfer device 82. The transfer area 81 is adjacent to the storage device 80 and extends from the storage device 80 in the positive direction of the X-axis. The transfer device 82 has a transfer arm. The transfer arm holds and transfers the target substrate W and the second carrier A2 in the transfer area 81. The number of transfer arms may be one or more. The transfer arm for the target substrate W and the transfer arm for the second carrier A2 may be provided separately. The transfer device 82 has a drive unit (not shown) that moves or rotates the transfer arm. The transfer arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction) and rotating about the vertical axis.

[0068] The second bonding station 8 includes an ultraviolet irradiation device 83 and a second bonding device 84. The ultraviolet irradiation device 83 and the second bonding device 84 are adjacent to the transfer region 81 and are provided on the Y-axis positive side, the Y-axis negative side, or the X-axis positive side of the transfer region 81. The ultraviolet irradiation device 83 irradiates ultraviolet light onto the tape A2b while the second die D2 is attached to the second carrier A2, thereby reducing the adhesive strength of the tape A2b. The second bonding device 84 separates the second die D2 from the second carrier A2 and bonds the second die D2 to the target substrate W by orienting the bonding surface D2a of the separated second die D2 toward the bonding surface Wa of the target substrate W.

[0069] The second control circuit 9B is, for example, a computer. The second control circuit 9B includes, for example, an arithmetic unit 91B such as a CPU (Central Processing Unit) and a storage unit 92B such as a memory. The storage unit 92 stores programs that control various processes executed in the second cluster 1B. The second control circuit 9B controls the operation of the second cluster 1B by having the arithmetic unit 91B execute the programs stored in the storage unit 92B. A lower-level control circuit that controls the operation of each device constituting the second cluster 1B may be provided, and a higher-level control circuit that controls the overall operation of the multiple lower-level control circuits may be provided. The second control circuit 9B may be configured with multiple lower-level control circuits and the higher-level control circuit.

[0070] The second control circuit 9B includes electronic circuits such as a CPU, a GPU (Graphics Processing Unit), an FPGA (Field Programmable Gate Array), or an ASIC (Application Specific Integrated Circuit), and performs the various control operations described in this specification by executing instruction codes stored in a memory or by being a circuit designed for a specific application.

[0071] The first control circuit 9A and the second control circuit 9B are capable of communicating with each other and cooperate to control the operation of the joint system 1.

[0072] Next, a bonding method according to one embodiment will be described with reference to Fig. 7. The process of Fig. 7 is performed under the control of the second control circuit 9B. First, the transport device 62 removes the second carrier A2 from the sixth cassette C6 and transports it to the storage device 70. Next, the transport device 72 removes the second carrier A2 from the storage device 70 and transports it to the third cleaning device 73.

[0073] Next, the third washing device 73 washes the bonding surface D2a of the second die D2 with a washing liquid while the second carrier A2 is mounted with the second die D2 (step S108). After that, the transport device 72 removes the second carrier A2 from the third washing device 73 and transports it to the third modifying device 74.

[0074] Next, the third modifying device 74 modifies the bonding surface D2a of the second die D2 with plasma while the second carrier A2 is attached to the second die D2 (step S109). After that, the transport device 72 removes the second carrier A2 from the third modifying device 74 and transports it to the third hydrophilization device 75.

[0075] Next, the third hydrophilization device 75 hydrophilizes the bonding surface D2a of the second die D2 while the second carrier A2 is mounted with the second die D2 (step S110). The transport device 72 then removes the second carrier A2 from the third hydrophilization device 75 and transports it to the storage device 80. The transport device 82 then removes the second carrier A2 from the storage device 80 and transports it to the ultraviolet irradiation device 83. With the second die D2 mounted on the second carrier A2, the ultraviolet irradiation device 83 irradiates ultraviolet light on the tape A2b to reduce the adhesive strength of the tape A2b. The transport device 82 then removes the second carrier A2 from the ultraviolet irradiation device 83 and transports it to the second bonding device 84.

[0076] In parallel with steps S108 to S110, the target substrate W is transported. First, the transport device 62 takes out the target substrate W from the second cassette C2 and transports it to the storage device 70. Next, the transport device 72 takes out the target substrate W from the storage device 70 and transports it to the storage device 80. Subsequently, the transport device 82 takes out the target substrate W from the storage device 80 and transports it to the second bonding device 84.

[0077] Next, the second bonding device 84 separates the second die D2 from the second carrier A2, and bonds the second die D2 to the target substrate W by facing the bonding surface D2a of the separated second die D2 toward the bonding surface Wa of the target substrate W (step S111).

[0078] The target substrate W after bonding the second die D2 is transported to the fifth cassette C5. First, the transport device 82 removes the target substrate W from the second bonding device 84 and transports it to the storage device 80. Next, the transport device 72 removes the target substrate W from the storage device 80 and transports it to the storage device 70. Finally, the transport device 62 removes the target substrate W from the storage device 70 and stores it in the fifth cassette C5.

[0079] The second carrier A2, from which the second die D2 has been separated, is stored in the seventh cassette C7. First, the transport device 82 removes the second carrier A2 from the second joining device 84 and transports it to the storage device 80. Next, the transport device 72 removes the second carrier A2 from the storage device 80 and transports it to the storage device 70. Finally, the transport device 62 removes the second carrier A2 from the storage device 70 and stores it in the seventh cassette C7.

[0080] A bonding system 1 according to a first modified example will be described with reference to Fig. 8. As shown in Fig. 8, the bonding system 1 may include a loading / unloading station 2, a first pre-processing station 3, a first bonding station 4, a second pre-processing station 7, and a second bonding station 8, arranged in a line in this order. The bonding system 1 also includes a control circuit 9. According to this modified example, the number of loading / unloading stations can be reduced. Differences from the above embodiment will be mainly described below.

[0081] The loading / unloading station 2 includes a mounting table 20. On the mounting table 20, a first cassette C1, a fifth cassette C5, a third cassette C3, a fourth cassette C4, a sixth cassette C6, and a seventh cassette C7 are mounted.

[0082] The loading / unloading station 2 includes a transfer area 21 and a transfer device 22. The transfer arm of the transfer device 22 holds and transfers the target substrate W, the first carrier A1, and the second carrier A2 in the transfer area 21. The transfer arm for the target substrate W, the transfer arm for the first carrier A1, and the transfer arm for the second carrier A2 may be provided separately. The transfer devices 32 and 42 are configured similarly to the transfer device 22.

[0083] The first pre-processing station 3 includes a storage device 30. The storage device 30 temporarily stores the target substrates W, the first carrier A1, and the second carrier A2. The storage device 30 has a plurality of stages arranged vertically. Each stage carries the target substrate W, the first carrier A1, and the second carrier A2. The stage for the target substrates W, the stage for the first carrier A1, and the stage for the second carrier A2 may be provided separately. The storage device 40 is configured similarly to the storage device 30.

[0084] The control circuit 9 is, for example, a computer. The control circuit 9 includes an arithmetic unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as a memory. The storage unit 92 stores programs that control various processes executed in the bonding system 1. The control circuit 9 controls the operation of the bonding system 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92.

[0085] The control circuit 9 includes electronic circuits such as a CPU, a GPU (Graphics Processing Unit), an FPGA (Field Programmable Gate Array), or an ASIC (Application Specific Integrated Circuit), and performs the various control operations described in this specification by executing instruction codes stored in a memory or by being a circuit designed for a specific application.

[0086] Next, the operation (bonding method) of the bonding system 1 shown in Fig. 8 will be described. Here, the processing after step S107 will be described. The transport device 42 removes the target substrate W from the first bonding device 44 and transports it to the storage device 70. Next, the transport device 72 removes the target substrate W from the storage device 70 and transports it to the storage device 80. Subsequently, the transport device 82 removes the target substrate W from the storage device 80 and transports it to the second bonding device 84.

[0087] After the target substrate W is removed from the first cassette C1, it is bonded to the first die D1, and while being transported to the second bonding device 84, the following processes are performed in parallel. First, the transport device 22 removes the second carrier A2 from the sixth cassette C6 and transports it to the storage device 30. Next, the transport device 32 removes the second carrier A2 from the storage device 30 and transports it to the storage device 40. Next, the transport device 42 removes the second carrier A2 from the storage device 40 and transports it to the storage device 70. Next, the transport device 72 removes the second carrier A2 from the storage device 70 and transports it to the third cleaning device 73. Thereafter, steps S108 to S110 are performed as in the above embodiment. Thereafter, the transport device 72 removes the second carrier A2 from the third hydrophilization device 75 and transports it to the storage device 80. Next, the transport device 82 takes out the second carrier A2 from the storage device 80 and transports it to the second joining device 84 via the ultraviolet irradiation device 83.

[0088] Next, the second bonding device 84 separates the second die D2 from the second carrier A2, and bonds the second die D2 to the target substrate W by facing the bonding surface D2a of the separated second die D2 toward the bonding surface Wa of the target substrate W (step S111).

[0089] The target substrate W after bonding the second die D2 is transported to the fifth cassette C5. First, the transport device 82 removes the target substrate W from the second bonding device 84 and transports it to the storage device 80. Next, the transport device 72 removes the target substrate W from the storage device 80 and transports it to the storage device 70. Next, the transport device 42 removes the target substrate W from the storage device 70 and transports it to the storage device 40. Next, the transport device 32 removes the target substrate W from the storage device 40 and transports it to the storage device 30. Finally, the transport device 22 removes the target substrate W from the storage device 30 and stores it in the fifth cassette C5.

[0090] The second carrier A2, from which the second die D2 has been separated, is stored in the seventh cassette C7. First, the transport device 82 removes the second carrier A2 from the second joining device 84 and transports it to the storage device 80. Next, the transport device 72 removes the second carrier A2 from the storage device 80 and transports it to the storage device 70. Next, the transport device 42 removes the second carrier A2 from the storage device 70 and transports it to the storage device 40. Next, the transport device 32 removes the second carrier A2 from the storage device 40 and transports it to the storage device 30. Finally, the transport device 22 removes the second carrier A2 from the storage device 30 and stores it in the seventh cassette C7.

[0091] A bonding system 1 according to a second modified example will be described with reference to Fig. 9. As shown in Fig. 9, the bonding system 1 may include a loading / unloading station 2, a first pre-processing station 3, a second pre-processing station 7, a first bonding station 4, and a second bonding station 8, arranged in a line in this order. The bonding system 1 also includes a control circuit 9. According to this modified example, the number of loading / unloading stations can be reduced, as in the first modified example. The following mainly describes the differences from the first modified example.

[0092] In this modification, the positions of the first bonding station 4 and the second pre-treatment station 7 are reversed from those of the first modification. The transport arms of the transport device 72 hold and transport the target substrate W, the first carrier A1, and the second carrier A2 in the transport region 71. The transport arms for the target substrate W, the first carrier A1, and the second carrier A2 may be provided separately.

[0093] The storage device 70 temporarily stores the target substrates W, the first carrier A1, and the second carrier A2. The storage device 70 has multiple stages arranged in the vertical direction. Each stage holds a target substrate W, the first carrier A1, and the second carrier A2. The stage for the target substrates W, the stage for the first carrier A1, and the stage for the second carrier A2 may be provided separately.

[0094] A bonding system 1 according to a third modified example will be described with reference to Fig. 10 . As shown in Fig. 10 , the bonding system 1 may include a loading station 2, a first pre-processing station 3, a first bonding station 4, a second pre-processing station 7, a second bonding station 8, and an unloading station 6, arranged in a line in this order. The bonding system 1 also includes a control circuit 9. According to this modified example, the target substrate W, the first carrier A1, and the second carrier A2 can be transported in one direction from the station on the left side of the figure to the station on the right side of the figure, thereby improving transport efficiency. Differences from the first modified example will be mainly described below.

[0095] The first cassette C1, the third cassette C3, and the sixth cassette C6 are placed on the placement table 20 of the loading station 2. Meanwhile, the fifth cassette C5, the fourth cassette C4, and the seventh cassette C7 are placed on the placement table 60 of the unloading station 6. The second joining station 8 has a storage device 85 on the opposite side of the transport area 81 from the storage device 80.

[0096] The storage device 85 temporarily stores the target substrates W, the first carrier A1, and the second carrier A2. The other storage devices 30, 40, 70, and 80 also temporarily store the target substrates W, the first carrier A1, and the second carrier A2. The storage device 85 is adjacent to the transport area 61 of the unloading station 6.

[0097] The transfer device 62 of the unloading station 6 receives the target substrates W, the first carrier A1 and the second carrier A2 from the storage device 85, and stores them in the fifth cassette C5, the fourth cassette C4 or the seventh cassette C7, respectively.

[0098] In this modification, all of the transport devices 22, 32, 42, 72, 82, and 62 hold and transport the target substrate W, the first carrier A1, and the second carrier A2. The transport arm for the target substrate W, the transport arm for the first carrier A1, and the transport arm for the second carrier A2 may be provided separately.

[0099] Although the embodiments of the joining system and joining method according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These naturally fall within the technical scope of the present disclosure.

[0100] This application claims priority based on Japanese Patent Application No. 2024-077550, filed with the Japan Patent Office on May 10, 2024, the entire contents of which are incorporated herein by reference.

[0101] 1 Bonding system 44 First bonding device 84 Second bonding device D1 First die A1 First carrier A1a Carrier substrate A1b Resin film A2 Second carrier A2a Frame A2b Tape

Claims

1. A bonding system comprising: a first bonding device that separates a plurality of first dies from a first carrier and bonds them to a target substrate; and a second bonding device that separates a plurality of second dies from a second carrier and bonds them to the target substrate, wherein the first carrier has a carrier substrate and a resin film provided on the carrier substrate, and the plurality of first dies are mounted on the resin film, and the second carrier has a frame and a tape that covers an opening of the frame, and the plurality of second dies are mounted on the tape.

2. The bonding system of claim 1, wherein the target substrate is electrically connected to only the first die of the first and second dies.

3. The bonding system according to claim 1 or 2, comprising: a first modifying device that modifies the bonding surface of the target substrate with plasma; a second modifying device that modifies the bonding surface of the first die with plasma while the first die is mounted on the first carrier; and a third modifying device that modifies the bonding surface of the second die with plasma while the second die is mounted on the second carrier.

4. The bonding system according to claim 3, comprising: a first hydrophilization device that hydrophilizes the bonding surface of the target substrate modified by the first modification device; a second hydrophilization device that hydrophilizes the bonding surface of the first die modified by the second modification device while the first die is mounted on the first carrier; and a third hydrophilization device that hydrophilizes the bonding surface of the second die modified by the third modification device while the second die is mounted on the second carrier.

5. The bonding system according to claim 1 or 2, comprising: a first cleaning device that cleans the bonding surface of the target substrate; a second cleaning device that cleans the bonding surface of the first die with a cleaning liquid while the first die is mounted on the first carrier; and a third cleaning device that cleans the bonding surface of the second die with a cleaning liquid while the second die is mounted on the second carrier.

6. A manufacturing method for a wafer processing apparatus comprising: a first cluster and a second cluster, wherein the first cluster comprises, in a line in this order: a first cassette accommodating the target substrate before the first die and the second die are bonded together; a second cassette accommodating the target substrate after the first die is bonded but before the second die is bonded together; a third cassette accommodating the first carrier with the first die attached; and a fourth cassette accommodating the first carrier with the first die separated from it; a first pre-treatment station which processes the bonding surface of the target substrate and the bonding surface of the first die attached to the first carrier before bonding the first die to the target substrate; and a first bonding station including the first bonding device; and wherein the second cluster comprises:

3. The bonding system according to claim 1, further comprising: a second loading / unloading station on which the second cassette, a fifth cassette accommodating the target substrate after the first die and the second die have been bonded, a sixth cassette accommodating the second carrier with the second die attached, and a seventh cassette accommodating the second carrier with the second die separated therefrom, are placed; a second pre-processing station that processes a bonding surface of the second die attached to the second carrier before bonding the second die to the target substrate; and a second bonding station including the second bonding device, arranged in a line in this order.

7. A loading / unloading station on which are placed a first cassette accommodating the target substrate before the first die and the second die are bonded, a fifth cassette accommodating the target substrate after the first die and the second die have been bonded, a third cassette accommodating the first carrier with the first die attached, a fourth cassette accommodating the first carrier with the first die separated, a sixth cassette accommodating the second carrier with the second die attached, and a seventh cassette accommodating the second carrier with the second die separated; a first pre-processing station which processes a bonding surface of the target substrate and a bonding surface of the first die attached to the first carrier before bonding the first die to the target substrate; a first bonding station including the first bonding device; a second pre-processing station which processes a bonding surface of the second die attached to the second carrier before bonding the second die to the target substrate; and a second bonding station including the second bonding device. The joint system according to claim 1 or 2, wherein the joint system comprises:

8. A carry-in / out station on which are placed a first cassette accommodating the target substrate before the first die and the second die are bonded, a fifth cassette accommodating the target substrate after the first die and the second die have been bonded, a third cassette accommodating the first carrier with the first die attached, a fourth cassette accommodating the first carrier with the first die separated, a sixth cassette accommodating the second carrier with the second die attached, and a seventh cassette accommodating the second carrier with the second die separated; a first pre-processing station which processes a bonding surface of the target substrate and a bonding surface of the first die attached to the first carrier before bonding the first die to the target substrate; a second pre-processing station which processes a bonding surface of the second die attached to the second carrier before bonding the second die to the target substrate; a first bonding station including the first bonding device; and a second bonding station including the second bonding device. The joint system according to claim 1 or 2, wherein the joint system comprises:

9. an input station on which are placed a first cassette accommodating the target substrate before the first die and the second die are bonded, a third cassette accommodating the first carrier with the first die attached, and a sixth cassette accommodating the second carrier with the second die attached; a first pre-processing station which processes a bonding surface of the target substrate and a bonding surface of the first die attached to the first carrier before bonding the first die to the target substrate; a first bonding station including the first bonding device; a second pre-processing station which processes a bonding surface of the second die attached to the second carrier before bonding the second die to the target substrate; a second bonding station including the second bonding device; an output station on which are placed a fifth cassette accommodating the target substrate after the first die and the second die are bonded, a fourth cassette accommodating the first carrier with the first die separated, and a seventh cassette accommodating the second carrier with the second die separated; The joint system according to claim 1 or 2, wherein the joint system comprises:

10. A bonding method comprising bonding a plurality of the first dies and a plurality of the second dies to the target substrate using the bonding system of claim 1 or 2.

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