Substrate processing apparatus

Abstract

The present invention provides a substrate processing apparatus capable of independently controlling plasma density and ion collision energy. To this end, a substrate processing apparatus, according to one embodiment of the present invention, may comprise: a chamber providing a reaction space in which a substrate is processed; a first electrode disposed inside the chamber; a second electrode provided inside the chamber and arranged to face the first electrode; a first RF generator connected to the first electrode; a second RF generator connected to the second electrode; and an electrode plate disposed between the first electrode and the second electrode.

Description

substrate processing device

[0001] The present invention relates to a substrate processing device.

[0002] Typically, a substrate processing device provides a substrate inside a chamber and performs processes such as deposition and etching on the substrate. In this case, plasma can be used to increase the efficiency of the substrate processing process.

[0003] Figure 1 is an exemplary diagram showing a conventional substrate processing device.

[0004] Referring to (a) of FIG. 1, the chamber (110) is connected to ground, the first electrode (120) is connected to the first RF generator (150), and the second electrode (130) is connected to the second RF generator (160). In addition, the substrate (140) is placed on the upper surface of the second electrode (130). High-frequency power or low-frequency power is applied to the first electrode (120), and high-frequency power or low-frequency power is applied to the second electrode (130).

[0005] However, this conventional substrate processing device has a problem in that an arc is generated inside the chamber (110) or a uniform process is not performed on the substrate (140) because the electric field is not uniformly transmitted to the substrate (140) and is formed toward the inner wall of the chamber (110).

[0006] Furthermore, conventional substrate processing devices have a structural limitation: the electrode facing the electrode receiving power must be grounded. To overcome this limitation, a device that applies different power levels to one electrode has been developed.

[0007] Referring to (b) of Fig. 1, the chamber (110) is connected to ground, and the first electrode (120) is connected to the first RF generator (150). In addition, the electrode plate (140) is placed on the upper surface of the second electrode (130). High-frequency power and low-frequency power are applied together to the first electrode (120). In this structure, an electric field is formed from the first electrode (120) to the second electrode (130).

[0008] Referring to (c) of FIG. 1, the first electrode (120) in the chamber (110) is connected to the ground, and the second electrode (130) is connected to the second RF generator (160). Then, the substrate (140) is placed on the upper surface of the second electrode (130). High-frequency power and low-frequency power are applied together to the second electrode (130).

[0009] However, these conventional substrate processing devices not only could not independently control plasma density and ion collision energy, but also had unavoidable interference between different frequencies, which ultimately resulted in limitations in the amount of power applied.

[0010] Therefore, there is a need to provide a substrate processing device that can independently control plasma density and ion collision energy even when using different frequencies.

[0011] Accordingly, the present invention provides a substrate processing device capable of independently controlling plasma density and ion collision energy.

[0012] The objectives of the present invention are not limited to those mentioned above. Other objectives and advantages of the present invention not mentioned above can be understood through the following description and will be more clearly understood through embodiments of the present invention. Furthermore, it will be readily apparent that the objectives and advantages of the present invention can be realized by the means and combinations thereof set forth in the claims.

[0013] To achieve this purpose, a substrate processing device according to an embodiment of the present invention may include: a chamber providing a reaction space in which a substrate is processed; a first electrode disposed inside the chamber; a second electrode disposed inside the chamber and facing the first electrode; a first RF generator connected to the first electrode; a second RF generator connected to the second electrode; and an electrode plate disposed between the first electrode and the second electrode.

[0014] In addition, the electrode plate according to one embodiment of the present invention has holes formed therein so that plasma generated by the first electrode and the second electrode can pass through, and the holes may be circular.

[0015] Additionally, the thickness of the electrode plate according to one embodiment of the present invention may be 10 mm or less.

[0016] Additionally, the diameter of each hole formed in the electrode plate according to one embodiment of the present invention may have a size greater than or equal to a predetermined multiple of the thickness of the electrode plate.

[0017] Additionally, the electrode plate according to one embodiment of the present invention can be connected to ground.

[0018] Additionally, the first RF generator according to one embodiment of the present invention can apply power for a first frequency or a second frequency through the first electrode.

[0019] Additionally, the second RF generator according to one embodiment of the present invention can apply power for a first frequency or a second frequency through the second electrode.

[0020] The substrate processing device according to the present invention can independently control plasma density and ion collision energy by placing an electrode plate between a first electrode and a second electrode in a chamber, and can also prevent the generation of interference even when different frequencies are used.

[0021] In addition, the present invention can independently control the plasma density and ion collision energy by forming holes in the electrode plate through which the plasma generated by the first electrode and the second electrode penetrates.

[0022] In addition, the present invention can enable plasma to easily penetrate the electrode plate by enlarging the diameter of each hole formed in the electrode plate to a size greater than a predetermined multiple of the thickness of the electrode plate.

[0023] In addition to the effects described above, specific effects of the present invention are described below while explaining specific details for carrying out the invention.

[0024] Figure 1 is an exemplary diagram showing a conventional substrate processing device.

[0025] FIG. 2 is an exemplary diagram showing the configuration of a chamber of a substrate processing device that processes a substrate using plasma according to one embodiment of the present invention.

[0026] Figure 3 is an exemplary diagram showing a polar plate according to one embodiment of the present invention.

[0027] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. In the drawings, the same reference numerals are used to indicate the same or similar components.

[0028] Although terms like "first" and "second" are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another, and unless otherwise specified, a "first" component may also be a "second" component.

[0029] Hereinafter, the phrase "any configuration is placed on (or below)" a component or "on (or below)" a component may mean that any configuration is placed in contact with the upper surface (or lower surface) of said component, and that other configurations may be interposed between said component and any configuration placed on (or below) said component.

[0030] Additionally, when it is described that a component is "connected," "coupled," or "connected" to another component, it should be understood that the components may be directly connected or connected to one another, but that other components may also be "interposed" between the components, or that each component may be "connected," "coupled," or "connected" through another component.

[0031] Throughout the specification, unless otherwise specifically stated, each element may be singular or plural.

[0032] As used herein, singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, terms such as "consisting of" or "comprising" should not necessarily be construed to include all of the components or steps described in the specification, and should be construed to mean that some of the components or steps may not be included, or that additional components or steps may be included.

[0033] Throughout the specification, when we refer to "A and / or B", this means A, B, or A and B, unless otherwise stated, and when we refer to "C to D", this means C or more and D or less, unless otherwise stated.

[0034] Hereinafter, a substrate processing device for processing a substrate using plasma according to some embodiments of the present invention will be described.

[0035] FIG. 2 is an exemplary diagram showing the configuration of a chamber of a substrate processing device that processes a substrate using plasma according to one embodiment of the present invention.

[0036] Referring to FIG. 2, a substrate processing device (or a positive power application device) (200) for processing a substrate using plasma according to an embodiment of the present invention may include a chamber (210) providing a reaction space in which a substrate is processed, a first electrode (220) disposed inside the chamber (210), a second electrode (230) provided inside the chamber and disposed to face the first electrode, a first RF (Radio Frequency) generator (250) connected to the first electrode (220), a second RF generator (260) connected to the second electrode (230), and an electrode plate (270) disposed between the first electrode (220) and the second electrode (230). A substrate (240) may be disposed on an upper surface of the second electrode (230).

[0037] The configuration of the substrate processing device (200) illustrated in FIG. 2 is according to one embodiment, and the components of the substrate processing device (200) are not limited to the embodiment illustrated in FIG. 2, and some components may be added, changed, or deleted as needed.

[0038] The substrate processing device of the present invention is configured based on a plasma enhanced chemical vapor deposition (PECVD) device based on capacitively coupled plasma (CCP), and a grounding electrode plate (270) having a uniform and wide hole is disposed between two electrodes (220, 230). In addition, the substrate processing device can be configured in a manner (i.e., four combinations) in which a first RF generator (250) connected to a first electrode (220) applies high frequency power or low frequency power, and a second RF generator (260) connected to a second electrode (240) applies high frequency power or low frequency power, and can include a pulse function. In addition, a DC bias voltage can be applied to each electrode. These four combinations can be distinguished as follows depending on whether each of the first RF generator (250) and the second RF generator (260) applies high-frequency power or low-frequency power.

[0039] For example, in the case of the first combination, the substrate processing device of the present invention can generate plasma by having the first RF generator (250) apply high-frequency power to the first electrode (220) and the second RF generator (260) apply high-frequency power to the second electrode (240).

[0040] Alternatively, in the second combination, the substrate processing device of the present invention can generate plasma by having the first RF generator (250) apply high-frequency power to the first electrode (220) and the second RF generator (260) apply low-frequency power to the second electrode (240).

[0041] Alternatively, in the case of the third combination, the substrate processing device of the present invention can generate plasma by having the first RF generator (250) apply low-frequency power to the first electrode (220) and the second RF generator (260) apply high-frequency power to the second electrode (240).

[0042] Alternatively, in the fourth combination, the substrate processing device of the present invention can generate plasma by having the first RF generator (250) apply low-frequency power to the first electrode (220) and the second RF generator (260) apply low-frequency power to the second electrode (240).

[0043] According to one embodiment, the chamber (210) provides a reaction space in which a substrate (e.g., a wafer) is processed. A matcher (not shown) connected to a first electrode (220) to match the impedance of high-frequency power may be provided at the upper portion of the chamber (210).

[0044] The chamber (210) is configured to maintain confidentiality, discharges process gases present in the internal space of the chamber (210), can control the vacuum level, and can be provided in various shapes.

[0045] According to one embodiment, the matcher may be positioned at the top or bottom of the chamber (210). For example, the matcher may be positioned at the top of the chamber (210) and connected to the first electrode (220), or may be positioned at the bottom of the chamber (210) and connected to the second electrode (230).

[0046] Alternatively, the chamber (210) may act as a capacitor to adjust the impedance, in which case the matcher may be omitted.

[0047] According to one embodiment, the first electrode (220) (e.g., showerhead) may be placed at the upper portion of the interior of the chamber (210), and a gas supply unit that supplies a process gas to the substrate (240) may serve as the first electrode (220). The first electrode (220) is connected to the first RF generator (250), and may receive high-frequency (e.g., 13.56 MHz) power or low-frequency (e.g., 370 kHz) power from the first RF generator (250). According to one embodiment, the height of the first electrode (220) (e.g., showerhead) may be variably adjusted.

[0048] For example, the thickness of the first electrode (220) may be 25 mm to 30 mm.

[0049] According to one embodiment, a second electrode (230) (e.g., a heater) is disposed inside the chamber (210) and may be disposed to face the first electrode (220). The second electrode (230) is connected to a second RF generator (260) and may receive high-frequency (e.g., 13.56 MHz) power or low-frequency (370 kHz) power from the second RF generator (260).

[0050] According to one embodiment, the height of the second electrode (230) (e.g., heater) can be variably adjusted. For example, the second electrode (230) can be configured as a substrate support having a built-in heater for heating the substrate (240).

[0051] According to one embodiment, the exterior of the second electrode (230) may be manufactured from aluminum, and a coil may be arranged inside. This second electrode (230) may be driven to maintain a constant process temperature while the process is in progress, and a coil (not shown) may be inserted into the chuck on which the substrate on which the process is to be performed is placed. In addition, the second electrode (230) may perform a plasma process using frequency power supplied from a second RF generator (260) located above the heater (10) while the thin film deposition process is in progress.

[0052] According to one embodiment, the first RF generator (250) can generate plasma by supplying high frequency (e.g., 13.56 MHz) power or low frequency (e.g., 370 kHz) power to the first electrode (220).

[0053] According to one embodiment, the second RF generator (260) can generate plasma by supplying high frequency (e.g., 13.56 MHz) power or low frequency (e.g., 370 kHz) power to the second electrode (240).

[0054] According to one embodiment, the electrode plate (270) has a plurality of holes formed therein so that plasma generated by the first electrode (220) and the second electrode (230) can pass therethrough. For example, each of the plurality of holes may be formed at a certain interval from each other. In addition, the holes may be formed in a circular shape. By forming the holes of the electrode plate (270) in a circular shape, arcing caused by a lightning rod effect when the holes are at right angles can be prevented.

[0055] According to one embodiment, the diameter of each hole formed in the electrode plate (270) may be a predetermined multiple (e.g., twice) or larger than the thickness of the electrode plate (270). Alternatively, the diameter of each hole formed in the electrode plate (270) may be larger than the thickness of the electrode plate (270). For example, the diameter of the hole may be a size that allows plasma to easily penetrate.

[0056] For example, the thickness of the electrode plate (270) may be 1 mm to 10 mm, and the diameter of the hole may be 2 mm to 20 mm. This is because a sheath region, which is a region where plasma does not exist when plasma is discharged, exists, and the thickness of this region may typically be several mm, so it is preferable that the hole diameter is 2 mm or more. In addition, if the hole becomes larger than 20 mm, the uniformity of the electric field may decrease, so it is preferable that it is 20 mm or less. The thickness of the electrode plate (270) is preferably thinner (10 mm or less) than the first electrode (220) (e.g., showerhead). This is to allow plasma to easily penetrate under the electrode plate (270). In addition, the thickness of the electrode plate (270) is preferably 1 mm or more. This is because if the thickness becomes too thin, deformation may easily occur when heated. In addition, the length of the electrode plate (270) may be 410 mm.

[0057] According to one embodiment, one side of the electrode plate (270) is connected to ground. The plasma generated by the first electrode (220) and the second electrode (230) can penetrate the plasma formed in the electrode plate (270).

[0058] As described above, the substrate processing device in which the electrode plate (270) is arranged can improve the plasma density by applying high-frequency power to the first electrode (220) through the first RF generator (250) and / or applying high-frequency power to the second electrode (240) through the second RF generator (260).

[0059] In addition, the substrate processing device in which the electrode plate (270) is arranged can increase ion collision energy by applying low-frequency power to the first electrode (220) through the first RF generator (250) and / or applying low-frequency power to the second electrode (240) through the second RF generator (260).

[0060] In this way, the substrate processing device in which the electrode plate (270) is arranged can improve the plasma density by applying a high-frequency electrode to the first electrode (220) and / or the second electrode (240), or can improve the ion collision energy by applying a low-frequency electrode to the first electrode (220) and / or the second electrode (240), thereby independently controlling the plasma density and the ion collision energy.

[0061] In addition, the substrate processing device in which the polar plate (270) is arranged can independently control the plasma density and ion collision energy using two different frequencies, and simultaneously resolve interference between the two frequencies and limitations on the amount of power applied.

[0062] In addition, the substrate processing device of the present invention can eliminate interference between frequencies because power of different frequencies does not share a single electrode plate. In addition, because an electric field is uniformly formed between three electrode plates (e.g., the first electrode (210), the second electrode (240), and the electrode plate (270)) within the chamber (210), the thickness and film quality of the thin film can be uniformly controlled.

[0063] In addition, since holes with large diameters are formed in the electrode plate (270) of the substrate processing device according to the present invention, plasma species containing high-density active species and ions can be used for thin film formation. In addition, the substrate processing device can be universally used as an etching device as well as a deposition device by freely changing the positions of applying power of two different frequencies to any one of the four combinations described above. In addition, if the diameters of the holes formed in the electrode plate are small, the active species and ions are captured on the grounded electrode plate, so the density of the active species and ions used in the process on the substrate surface may not be sufficient.

[0064] In addition, when detailed conditions of the processing process, including the plasma intensity for the substrate (240), are determined, the substrate processing device according to the present invention can adjust the impedance to correspond to the plasma using the chamber (210).

[0065] For example, the impedance of the chamber (210) can be adjusted to match the impedance corresponding to the desired plasma by adjusting the gap between the second electrode (230) and the first electrode (220) of the chamber (210), adjusting the flow rate and pressure of the process gas supplied through the first electrode (220) or the second electrode (240), etc. The method of adjusting the impedance by the chamber (210) is merely an example and can be performed in various ways.

[0066] Figure 3 is an exemplary diagram showing a polar plate according to one embodiment of the present invention.

[0067] Referring to FIG. 3, a plate (270) according to one embodiment of the present invention has a plurality of holes (301, 302, 303) formed therein so that plasma can pass through them. The diameters of each hole may be the same or different, which is an optional feature for improving plasma penetration performance.

[0068] According to one embodiment, the diameter (312) of the hole (301) may be larger than the thickness (311) of the plate (270). For example, the diameter of each hole formed in the plate (270) may have a size that is a predetermined multiple (e.g., twice) or larger than the thickness (311) of the plate (270). In addition, the thickness of the plate (270) may be within 1 mm to 10 mm. In addition, the length (313) of the plate (270) may be 410 mm.

[0069] Each step in each of the flowcharts described above may be performed regardless of the order shown, or may be performed simultaneously. Furthermore, at least one component of the present invention and at least one operation performed by said at least one component may be implemented in hardware and / or software.

[0070] Although the present invention has been described with reference to the drawings exemplified above, it is to be understood that the present invention is not limited to the embodiments and drawings disclosed in this specification, and that various modifications may be made by those skilled in the art within the scope of the technical idea of ​​the present invention. Furthermore, even if the operational effects according to the configuration of the present invention have not been explicitly described while describing the embodiments of the present invention, it is natural that the effects predictable by the corresponding configuration should also be acknowledged.

Claims

1. In the substrate processing device, A chamber providing a reaction space in which the substrate is processed; A first electrode placed inside the chamber; A second electrode provided inside the chamber and positioned to face the first electrode; A first RF generator connected to the first electrode; a second RF generator connected to the second electrode; and A substrate processing device including a polarizing plate disposed between the first electrode and the second electrode.

2. In paragraph 1, The above plate Holes are formed so that the plasma generated by the first electrode and the second electrode can pass through them, The above hole is a circular substrate processing device.

3. In paragraph 2, A substrate processing device wherein the thickness of the above-mentioned electrode plate is 10 mm or less.

4. In paragraph 2, A substrate processing device in which the diameter of each hole formed in the above electrode plate is a predetermined multiple of the thickness of the above electrode plate.

5. In paragraph 1, The above-mentioned electrode plate is a substrate processing device connected to ground.

6. In paragraph 1, The first RF generator applies power for a first frequency or a second frequency to the first electrode, A substrate processing device in which the second RF generator applies power for the first frequency or the second frequency to the second electrode.

Images