Optoelectronic packaging structure and manufacturing method therefor

Abstract

Provided in the present invention are an optoelectronic packaging structure and a manufacturing method therefor. The manufacturing method comprises the steps of: providing a bottom optoelectronic connection layer and a top base layer, wherein the bottom optoelectronic connection layer comprises a bottom electrical connection layer and a first optical waveguide layer, the first optical waveguide layer is embedded in the bottom electrical connection layer, and the top base layer comprises a top electrical connection layer; arranging the side of the top base layer provided with the top electrical connection layer to face the bottom optoelectronic connection layer; and connecting the top electrical connection layer to the bottom optoelectronic connection layer, wherein the bottom electrical connection layer and the top electrical connection layer form a redistribution layer. The manufacturing method realizes step-by-step manufacturing of the redistribution layer and prevents the bottom optoelectronic connection layer from undergoing repeated baking, thereby ensuring the structural stability and reliability of the optoelectronic packaging structure. Moreover, optical / electrical signal transmission channels are integrated in the same structural layer, thereby effectively increasing the overall integration degree of the optoelectronic packaging structure. The overall integration degree of the optoelectronic package structure is effectively increased, and the structural stability and reliability are effectively ensured.

Description

An optoelectronic packaging structure and a manufacturing method thereof TECHNICAL FIELD

[0001] The present application belongs to the field of integrated circuit packaging structure and manufacturing technology, and relates to an optoelectronic packaging structure and a manufacturing method thereof. BACKGROUND

[0002] With the rapid development of advanced technologies such as cloud computing, big data and artificial intelligence, the demand for information processing and transmission efficiency is increasing, and with the decrease of feature size, the physical limit and power consumption problem of electronic devices are increasingly prominent, and compared with the deficiencies presented in the process of electrical signal transmission, the use of optical signals for data transmission can significantly improve the transmission rate and bandwidth while maintaining low energy consumption, therefore, the optoelectronic integrated circuit technology is applied to combine the advantages of photonics and microelectronics to realize the generation, transmission, modulation, detection of optical signals and processing of electrical signals and other functions.

[0003] At present, the optical chip and the electrical chip can be packaged in one package to realize the efficient integration of the optoelectronic integrated circuit, in addition to reducing electromagnetic interference and radio frequency interference to improve signal integrity, it can also reduce the number of external connections and interfaces and the occupied space to make the system more compact to realize miniaturization and portability, which can meet the needs of modern high communication and intelligent systems. However, when the optical chip and the electrical chip are packaged together, the following problems exist: the silicon optical process node is relatively backward compared with the electrical chip process node, taking monolithic integration as an example, the optical chip and the electrical chip are processed on one chip to minimize the impedance mismatch caused by packaging, the most advanced process for monolithic development at present is 45nm and 32nm, compared with the electrical chip 10nm and below process, the process performance is relatively backward, and there is a situation that part of the overall performance is sacrificed and the cost is expensive, therefore, there is no way to integrate and package the optical chip and the electrical chip together with high density and at the same time ensure the reliability of the packaging structure.

[0004] Therefore, how to provide an optoelectronic packaging structure and a manufacturing method thereof to improve the packaging density and reliability of the packaging structure while ensuring the signal transmission performance has become an important technical problem to be solved by the person skilled in the art.

[0005] It should be noted that the above introduction to the technical background is only to facilitate the clear and complete description of the technical scheme of the present application, and to facilitate the understanding of the person skilled in the art. The above technical scheme cannot be considered as known to the person skilled in the art only because it is described in the background section of the present application. SUMMARY

[0006] In view of the above-mentioned defects of the prior art, the present application aims to provide an optoelectronic packaging structure and a manufacturing method thereof, which are used to solve the problem that the packaging density and reliability of the prior art optoelectronic packaging structure need to be improved.

[0007] To achieve the above-mentioned objects and other related objects, the present application provides a manufacturing method of an optoelectronic packaging structure, comprising the following steps:

[0008] providing a bottom optoelectronic connection layer and a top base layer, the bottom optoelectronic connection layer comprising a bottom electrical connection layer and a first optical waveguide layer, the first optical waveguide layer being embedded in the bottom electrical connection layer, the top base layer comprising a top electrical connection layer;

[0009] arranging one side of the top base layer provided with the top electrical connection layer towards the bottom optoelectronic connection layer;

[0010] connecting the top electrical connection layer and the bottom optoelectronic connection layer, wherein the bottom electrical connection layer and the top electrical connection layer constitute a rewiring layer.

[0011] Optionally, providing the bottom optoelectronic connection layer comprises the following steps:

[0012] providing a bottom base layer, the bottom base layer comprising a first electrical connection layer;

[0013] forming a first optical waveguide layer on the bottom base layer, the first optical waveguide layer covering a part of the first electrical connection layer;

[0014] forming a second electrical connection layer above the bottom base layer to constitute the bottom optoelectronic connection layer, the second electrical connection layer also covering the first optical waveguide layer, the first electrical connection layer and the second electrical connection layer constituting the bottom electrical connection layer.

[0015] Optionally, after connecting the top electrical connection layer and the bottom optoelectronic connection layer, the method further comprises the following steps:

[0016] forming an opening penetrating a part of the rewiring layer to expose at least a part of the first optical waveguide layer;

[0017] forming a second optical waveguide layer in the opening, the second optical waveguide layer being connected with the first optical waveguide layer to constitute an optical waveguide structure.

[0018] Optionally, the manufacturing method further comprises the step of arranging an optical chip and an electrical chip above the rewiring layer to constitute an optoelectronic functional module with the rewiring layer, the optical chip having an optical signal output window arranged towards the second optical waveguide layer, the optical signal generated by the optical chip being emitted from the optical signal output window and then transmitted through the optical waveguide structure.

[0019] Optionally, the manufacturing method further comprises the following steps:

[0020] The optoelectronic functional module is disposed above the packaging substrate, and the optoelectronic functional module is electrically connected to the packaging substrate.

[0021] The optical connector is disposed on the packaging substrate, and an input end of the optical connector is disposed opposite the first optical waveguide layer to receive the optical signal transmitted by the first optical waveguide layer.

[0022] Optionally, the bottom base layer further comprises a bottom support layer, and disposing the optoelectronic functional module above the packaging substrate comprises the following steps:

[0023] The bottom support layer is removed to expose one side of the first electrical connection layer facing away from the second electrical connection layer.

[0024] Conductive bumps are formed on the exposed side of the first electrical connection layer.

[0025] The structure formed with the conductive bumps is disposed above the packaging substrate, and the conductive bumps are connected to the packaging substrate.

[0026] Optionally, the method of connecting the top electrical connection layer and the bottom optoelectronic connection layer comprises at least one of hybrid bonding and thermal compression bonding.

[0027] Optionally, the top base layer further comprises a top support layer below the top electrical connection layer, and after connecting the top electrical connection layer and the bottom optoelectronic connection layer, the top support layer is removed to transfer the top electrical connection layer to the bottom electrical connection layer.

[0028] Optionally, the top base layer further comprises a top release layer between the top electrical connection layer and the top support layer, and the method of removing the top support layer comprises laser debonding.

[0029] The present application also provides an optoelectronic packaging structure, comprising:

[0030] A rewiring layer comprising a bottom electrical connection layer and a top electrical connection layer connected to the bottom electrical connection layer.

[0031] An optical waveguide structure embedded in the rewiring layer, the optical waveguide structure comprising a first optical waveguide layer, the first optical waveguide layer being located in the bottom electrical connection layer.

[0032] Optionally, the method of connecting the top electrical connection layer and the bottom optoelectronic connection layer comprises at least one of hybrid bonding and thermal compression bonding.

[0033] Optionally, the optical waveguide structure further comprises a second optical waveguide layer, the second optical waveguide layer penetrating through a part of the redistribution layer and being connected with the first optical waveguide layer.

[0034] Optionally, the optoelectronic packaging structure further comprises an optical chip and an electrical chip, the optical chip and the electrical chip are both arranged above the redistribution layer to form an optoelectronic functional module with the redistribution layer, the optical chip has an optical signal output window, the optical signal output window is arranged towards the second optical waveguide layer, and the optical signal generated by the optical chip is emitted by the optical signal output window and then transmitted through the optical waveguide structure.

[0035] As described above, the method for manufacturing the optoelectronic packaging structure of the present application, by arranging the top base layer and the bottom optoelectronic connection layer towards each other and connecting the top electrical connection layer and the bottom optoelectronic connection layer, the redistribution layer is manufactured step by step, and the bottom optoelectronic connection layer will not be repeatedly baked for many times, which guarantees the structural stability and reliability of the optoelectronic packaging structure. Further, by manufacturing the optical waveguide structure step by step in the redistribution layer, the optical signal transmission channel and the electrical signal transmission channel are integrated in the same structure layer, which effectively increases the overall integration of the optoelectronic packaging structure, realizes high-density packaging, and the overall manufacturing steps are simple and easy to implement, low in cost and easy to realize large-scale production. The optoelectronic packaging structure of the present application sets the optical waveguide structure in the redistribution layer, integrates the optical signal transmission channel and the electrical signal transmission channel in the same structure layer, effectively increases the overall integration of the optoelectronic packaging structure to realize high-density packaging, and at the same time, the redistribution layer is obtained by distributed manufacturing, which effectively guarantees the structural stability and reliability of the optoelectronic packaging structure, and meets the application requirements of high reliability and high stability BRIEF DESCRIPTION OF DRAWINGS

[0036] FIG. 1 shows a step flow chart of the method for manufacturing the optoelectronic packaging structure of the present application.

[0037] FIG. 2 shows a schematic diagram of the structure obtained after providing the bottom base layer in the method for manufacturing the optoelectronic packaging structure of the present application.

[0038] FIG. 3 shows a schematic diagram of the structure obtained after forming the first optical waveguide layer in the method for manufacturing the optoelectronic packaging structure of the present application.

[0039] FIG. 4 shows a schematic diagram of the structure obtained after forming the second electrical connection layer in the method for manufacturing the optoelectronic packaging structure of the present application.

[0040] FIG. 5 shows a schematic diagram of the structure obtained after connecting the top base layer and the bottom optoelectronic connection layer in the method for manufacturing the optoelectronic packaging structure of the present application.

[0041] FIG. 6 shows a schematic diagram of the structure obtained after removing the top support layer in the method for manufacturing the optoelectronic packaging structure of the present application.

[0042] Figure 7 shows a schematic diagram of the structure after forming an opening in the method of fabricating the optoelectronic packaging structure of the present application.

[0043] Figure 8 shows a schematic diagram of the structure after forming a second optical waveguide layer in the method of fabricating the optoelectronic packaging structure of the present application.

[0044] Figure 9 shows a schematic diagram of the structure after disposing an optical chip and an electrical chip in the method of fabricating the optoelectronic packaging structure of the present application.

[0045] Figure 10 shows a schematic diagram of the structure after forming a filling layer in the method of fabricating the optoelectronic packaging structure of the present application.

[0046] Figure 11 shows a schematic diagram of the structure after removing the bottom support layer in the method of fabricating the optoelectronic packaging structure of the present application.

[0047] Figure 12 shows a schematic diagram of the structure after forming conductive bumps of the bottom connection layer in the method of fabricating the optoelectronic packaging structure of the present application.

[0048] Figure 13 shows a schematic diagram of the structure after disposing the optoelectronic packaging module and the optical connector on the packaging substrate in the method of fabricating the optoelectronic packaging structure of the present application.

[0049] 101 bottom opto-connection layer 102 bottom electrical connection layer 103 first optical waveguide layer 104 bottom base layer 105 first electrical connection layer 106 bottom support layer 107 bottom release layer 108 second electrical connection layer 109 top base layer 110 top electrical connection layer 111 top support layer 112 top release layer 113 rewiring layer 114 opening 115 second optical waveguide layer 116 optical waveguide structure 117 optical chip 118 electrical chip 119 optical signal output window 120a, 120b, 120c conductive bump 121 filling layer 122 packaging substrate 123 optical connector S1-S3 step DETAILED DESCRIPTION

[0050] Other advantages and benefits of the present application will become apparent to those skilled in the art upon consideration of the disclosure or can be learned by practice of the application. The present application can be realized and achieved by means of the structures and combinations particularly pointed out in the specification and claims hereof. Various modifications in detail of the application can be made without departing from the spirit thereof, the application is to cover and embrace any and all such modifications and changes as come within the scope and spirit of the present application.

[0051] Please refer to FIG. 1 to FIG. 13. It is to be noted that the drawings provided in the embodiments only schematically illustrate the basic concept of the present application, and thus only the components related to the present application are shown in the drawings, rather than being drawn according to the number, shape and size of the components in actual implementation. The shape, number and ratio of the components in actual implementation can be arbitrarily changed, and the layout pattern of the components can be more complex.

[0052] Embodiment One

[0053] The present embodiment provides a method for manufacturing an optoelectronic packaging structure. Please refer to FIG. 1, which shows a flowchart of the steps of the method, including the following steps:

[0054] S1: providing a bottom optoelectronic connection layer and a top base layer, the bottom optoelectronic connection layer including a bottom electrical connection layer and a first optical waveguide layer, the first optical waveguide layer being embedded in the bottom electrical connection layer, the top base layer including a top electrical connection layer;

[0055] S2: arranging the top base layer with the top electrical connection layer on one side of the bottom optoelectronic connection layer;

[0056] S3: connecting the top electrical connection layer and the bottom optoelectronic connection layer, wherein the bottom electrical connection layer and the top electrical connection layer constitute a rewiring layer.

[0057] First, please refer to FIG. 2 to FIG. 5, step S1 is performed to provide a bottom optoelectronic connection layer 101 and a top base layer 109, the bottom optoelectronic connection layer 101 including a bottom electrical connection layer 102 and a first optical waveguide layer 103 (as shown in FIG. 4), the first optical waveguide layer 103 being embedded in the bottom electrical connection layer 102, the top base layer 109 including a top electrical connection layer 110 (as shown in FIG. 5).

[0058] As an example, please refer to FIG. 2 to FIG. 4, the bottom optoelectronic connection layer 101 is provided by the following steps:

[0059] As shown in FIG. 2, a bottom base layer 104 is provided, the bottom base layer 104 including a first electrical connection layer 105;

[0060] As shown in FIG. 3, a first optical waveguide layer 103 is formed on the bottom base layer 104, the first optical waveguide layer 103 covering a part of the first electrical connection layer 105;

[0061] As an example, the material of the first optical waveguide layer 103 includes organic optical waveguide material (for example, fluorine-containing polyimide, polysiloxane and π-conjugated polymer, etc.), and the thickness of the first optical waveguide layer 103 ranges from 5 to 10 μm, including but not limited to 6 μm and 8 μm.

[0062] As shown in FIG. 4, a second electrical connection layer 108 is formed above the bottom base layer 104 to constitute the bottom optoelectrical connection layer 101, and the second electrical connection layer 108 also covers the first optical waveguide layer 103. The first electrical connection layer 105 and the second electrical connection layer 108 constitute the bottom electrical connection layer 102.

[0063] As an example, as shown in FIG. 2, the bottom base layer 104 further includes a bottom support layer 106 and a bottom release layer 107, wherein the bottom release layer 107 is located between the first electrical connection layer 105 and the bottom support layer 106. The bottom support layer is used to provide support for the first electrical connection layer, and the bottom release layer is used for subsequent removal of the bottom support layer without affecting the structural stability of the first electrical connection layer.

[0064] As an example, as shown in FIG. 2, the first electrical connection layer 105 includes a dielectric layer (not labeled in FIG. 2) and an electrical connection structure (not labeled in FIG. 2) in the dielectric layer, and the material of the dielectric layer includes PI. Forming the bottom base layer 104 includes the following steps: providing a bottom support layer 106, sequentially forming a bottom release layer 107 and a dielectric layer above the bottom support layer 106, and the dielectric layer is formed by coating; patterning the dielectric layer to form a filling opening; forming a conductive material layer above the dielectric layer, and the conductive material layer also fills into the filling opening; and planarizing the conductive material layer and retaining the part in the filling opening as the electrical connection structure.

[0065] Referring to FIG. 5, in step S2, one side of the top base layer 109 provided with the top electrical connection layer 110 is arranged to face the bottom optoelectrical connection layer 101.

[0066] Referring to FIG. 5, in step S3, the top electrical connection layer 110 and the bottom optoelectrical connection layer 101 are connected, wherein the bottom electrical connection layer 102 (see FIG. 4) and the top electrical connection layer 110 constitute a redistribution layer 113.

[0067] As an example, the method for connecting the top electrical connection layer 110 and the bottom optoelectrical connection layer 101 includes at least one of hybrid bonding and thermal compression bonding.

[0068] As an example, referring to FIGS. 2, 5 and 6, the top base layer 109 further includes a top support layer 111 below the top electrical connection layer 110. As shown in FIG. 6, after connecting the top electrical connection layer 110 and the bottom optoelectrical connection layer 101, the step of removing the top support layer 111 is further included to transfer the top electrical connection layer 110 to the bottom electrical connection layer 102.

[0069] As an example, as shown in FIG. 6, the top base layer 109 further comprises a top release layer 112 between the top electrical connection layer 110 and the top support layer 111, the material of the top release layer 112 comprises PI, and the method for removing the top support layer 111 comprises laser debonding. In this embodiment, the overall structure of the top base layer is basically similar to that of the bottom base layer, and both comprise a support layer, a release layer and an electrical connection layer stacked in turn from bottom to top. Correspondingly, the manufacturing steps of the top base layer are basically the same as those of the bottom base layer, only the detailed structures are different (such as thickness, specific structure of electrical connection structure, etc.). That is, one of the ways to arrange the top base layer and the bottom optoelectrical connection layer is to invert the top base layer above the bottom optoelectrical connection layer, and other arrangement ways can also be used as long as the top electrical connection layer and the second electrical connection layer are arranged oppositely. Specifically, the laser debonding is to apply a laser beam to the top release layer to soften the top release layer so as to fall off from the top electrical connection layer and remove the top support layer. The reason for choosing laser debonding is as follows: laser debonding has high accuracy and controllability, and can be performed at room temperature without causing negative effects on the top electrical connection layer and other structure layers. Although thermal debonding, chemical debonding, thermal slip debonding and mechanical peeling can also achieve the purpose of removing the top support layer, the dielectric layer of each electrical connection layer is easy to warp and cause reliability problems when it is in a high-temperature process environment for many times, and the optical waveguide layer is also sensitive to high-temperature environment. Therefore, the methods requiring high-temperature conditions are not suitable for removing the top support layer of this embodiment, and the methods of mechanical peeling and chemical debonding are easy to cause damage or destruction to the electrical connection layers and other structures. Therefore, the laser debonding is preferred in this embodiment.

[0070] As an example, please refer to FIG. 7 and FIG. 8, after connecting the top electrical connection layer 110 and the bottom optoelectrical connection layer 101, the following steps are further included

[0071] As shown in FIG. 7, an opening 114 is formed through a part of the redistribution layer 113 to expose at least a part of the first optical waveguide layer 103. In this embodiment, the opening 114 exposes the upper surface of one end of the first optical waveguide layer 103, and in other embodiments, the opening 114 can further penetrate at least a part of the first optical waveguide layer 103 to avoid the influence of insufficient etching on the structural integrity and optical signal transmission performance of the subsequent optical waveguide structure.

[0072] As shown in FIG. 8, a second optical waveguide layer 115 is formed in the opening 114, and the second optical waveguide layer 115 is connected with the first optical waveguide layer 103 to form an optical waveguide structure 116.

[0073] Specifically, the manufacturing method of the embodiment, on the one hand, embeds the optical waveguide layer for optical signal transmission into the rewiring layer on the basis of meeting the performance of the rewiring layer for electrical signal transmission, effectively improving the overall integration of the optoelectronic packaging structure (i.e. integrating the optical signal transmission channel and the electrical signal transmission channel in one structure layer); on the other hand, by designing the manufacturing steps of the rewiring layer, in addition to embedding the optical waveguide layer into the rewiring layer without increasing the difficulty of the manufacturing process, the problem of repeated high-temperature baking of the medium layer in part of the electrical connection layer and the optical waveguide layer in the rewiring layer is effectively avoided (the traditional manufacturing method of the multi-layer rewiring layer is to coat the medium material on the electrical connection layer formed and perform high-temperature baking to form the medium layer after each electrical connection layer is formed. In this way, the medium layer in the electrical connection layer at the bottom layer will be repeatedly baked for many times, which is easy to cause warping deformation and rupture. Similarly, if the electrical connection layer is manufactured on the part of the optical waveguide layer after it is formed, the optical waveguide layer will also undergo unnecessary high-temperature baking steps), while ensuring the structural stability and reliability of the rewiring layer, the signal transmission performance of the optical waveguide layer is ensured not to be damaged by high-temperature process conditions.

[0074] As an example, referring to FIG. 9, the manufacturing method further includes the step of disposing an optical chip 117 and an electrical chip 118 above the rewiring layer 113 to form an optoelectronic functional module with the rewiring layer 113, the optical chip 117 has an optical signal output window 119, the optical signal output window 119 is disposed towards the second optical waveguide layer 115 (please refer to FIG. 8), and the optical signal generated by the optical chip 117 is emitted by the optical signal output window 119 and then transmitted through the optical waveguide structure 116.

[0075] As an example, referring to FIG. 10, the manner in which the electrical chip 118 is electrically connected to the redistribution layer 113 includes at least one of a wire bonding and a flip chip bonding, and the manner in which the optical chip 117 is electrically connected to the redistribution layer 113 includes a flip chip bonding. Further, when the manner in which the optical chip 117 and the electrical chip 118 are electrically connected to the redistribution layer 113 both adopts a flip chip bonding, that is, a conductive bump 120a (serving as a first conductive bump for electrical connection between the optical chip / electrical chip and the redistribution layer) is formed on the side of the optical chip 117 / electrical chip 118 connected to the redistribution layer 113, and the optical chip 117 and the electrical chip 118 are electrically connected to the electrical connection structure in the redistribution layer 113 through the conductive bump 120a, after the optical chip 117 and the electrical chip 118 are arranged above the redistribution layer 113, a step of forming a filling layer 121 between the optical chip 117 / electrical chip 118 and the redistribution layer 113 is further included, and the filling layer 121 covers the conductive bump 120a for electrical connection to achieve an insulation protection effect. It should be noted that the optical chip 117 forms a blocking structure (not shown) between the optical signal output window 119 and the conductive bump 120a, or the redistribution layer 113 forms a blocking structure (not shown) on the surface corresponding to the optical signal output window 119 and the conductive bump 120a, so as to avoid the filling layer covering the optical signal output window 119 and the exposed surface of the second optical waveguide layer 115 of the optical waveguide structure 116, thereby isolating the two and failing to achieve smooth transmission of the optical signal. The material of the blocking structure (not shown) can be PI (polyimide).

[0076] As an example, referring to FIGS. 11 to 13, the manufacturing method further includes the following steps:

[0077] The optoelectronic functional module is arranged above the packaging substrate 122, and the optoelectronic functional module is electrically connected to the packaging substrate 122.

[0078] As shown in FIG. 13, the optical connector 123 is arranged on the packaging substrate 122, and the input end of the optical connector 123 is arranged opposite to the first optical waveguide layer 103 to receive the optical signal transmitted by the first optical waveguide layer 103 (the transmission path of the optical signal is shown by arrows in FIG. 13). Of course, in other embodiments, the optoelectronic functional module and the optical connector 123 can be arranged on the packaging substrate 122 at the same time or the optical connector 123 is arranged first and then the optoelectronic functional module is arranged, which is not specifically limited herein.

[0079] As an example, referring to FIGS. 10 and 11, the bottom base layer 104 further includes a bottom support layer 106 (as described before), and the arrangement of the optoelectronic functional module above the packaging substrate 122 includes the following steps:

[0080] As shown in FIG. 11, the bottom support layer 106 is removed to expose one side of the first electrical connection layer 105 away from the second electrical connection layer 108. Correspondingly, the method of removing the bottom support layer in this embodiment is the same as that of removing the top support layer.

[0081] As shown in FIG. 12, a conductive bump 120b (serving as a second conductive bump for electrical connection between the optoelectronic functional module and the packaging substrate) is formed on the exposed side of the first electrical connection layer 105 (i.e. the side of the first electrical connection layer originally connected to the bottom release layer).

[0082] As shown in FIG. 13, the structure with the conductive bump 120b formed thereon is arranged above the packaging substrate 122 and the conductive bump 120b is connected to the packaging substrate 122.

[0083] As an example, the side of the packaging substrate 122 away from the optoelectronic functional module is provided with a conductive bump 120c (serving as a third conductive bump for an external port of the optoelectronic packaging structure) to electrically connect the optoelectronic packaging structure to other functional structures.

[0084] As an example, the packaging substrate 122 includes a ceramic substrate, an organic substrate (e.g. BT resin, ABF material, MIS material), a silicon substrate and a composite material substrate.

[0085] The method for manufacturing the optoelectronic packaging structure of this embodiment realizes step-by-step manufacturing of the redistribution layer and prevents the bottom optoelectronic connection layer from being repeatedly baked multiple times, thereby ensuring the structural stability and reliability of the optoelectronic packaging structure. Furthermore, the step-by-step manufacturing of the optical waveguide structure in the redistribution layer integrates the optical signal transmission channel and the electrical signal transmission channel in the same structure layer, effectively increases the overall integration of the optoelectronic packaging structure, realizes high-density packaging, and has simple overall manufacturing steps, low cost and easy realization of mass production.

[0086] Embodiment Two

[0087] This embodiment provides an optoelectronic packaging structure, which is manufactured by the method described in Embodiment One or other suitable methods. The optoelectronic packaging structure includes a redistribution layer 113 and an optical waveguide structure 116.

[0088] Specifically, the rewiring layer 113 includes a bottom electrical connection layer 102 and a top electrical connection layer 110 connected to the bottom electrical connection layer 102; the optical waveguide structure 116 is embedded in the rewiring layer 113, and the optical waveguide structure 116 includes a first optical waveguide layer 103 located in the bottom electrical connection layer.

[0089] As an example, the method for connecting the top electrical connection layer 110 and the bottom optoelectrical connection layer 101 includes at least one of hybrid bonding and thermal compression bonding.

[0090] As an example, as shown in FIG. 8, the optical waveguide structure 116 further includes a second optical waveguide layer 115, which penetrates a portion of the rewiring layer 113 and is connected to the first optical waveguide layer 103.

[0091] As an example, as shown in FIG. 9, the optoelectrical packaging structure further includes an optical chip 117 and an electrical chip 118, both of which are arranged above the rewiring layer 113 to form an optoelectrical functional module with the rewiring layer 113, the optical chip 117 has an optical signal output window 119 located above the second optical waveguide layer 115, and the optical signal generated by the optical chip 117 is emitted by the optical signal output window 119 and then transmitted through the optical waveguide structure 116.

[0092] As an example, the electrical chip 118 and the rewiring layer 113 are electrically connected in at least one of wire bonding and Flipchip connection, and the optical chip 117 and the rewiring layer 113 are electrically connected in Flipchip connection. In this embodiment, the optical chip 117, the electrical chip 118 and the rewiring layer 113 are all electrically connected in Flipchip connection, and the optoelectrical functional module further includes conductive bumps for electrically connecting the optical chip 117 / the electrical chip 118 and the rewiring layer 113, and a filling layer 121 for covering the conductive bumps.

[0093] As an example, the optoelectrical packaging structure further includes a packaging substrate 122, and the optoelectrical functional module is arranged above the packaging substrate 122, and further, the optoelectrical functional module and the packaging substrate 122 are electrically connected in Flipchip (i.e., through conductive bumps arranged below the optoelectrical functional module).

[0094] As an example, the optoelectronic packaging structure further comprises an optical connector 123, which is arranged above the packaging substrate 122, and an input end of the optical connector 123 is arranged opposite to the first optical waveguide layer 103 to receive the optical signal transmitted by the first optical waveguide layer 103.

[0095] The optoelectronic packaging structure of the embodiment arranges the optical waveguide structure in the redistribution layer, integrates the optical signal transmission channel and the electrical signal transmission channel in the same structure layer, effectively increases the overall integration of the optoelectronic packaging structure to realize high-density packaging, and meanwhile, the redistribution layer is obtained by distribution, so that the structural stability and reliability of the optoelectronic packaging structure are effectively guaranteed, and the application requirements of high reliability and high stability are met.

[0096] In summary, the manufacturing method of the optoelectronic packaging structure of the embodiment arranges the top base layer opposite to the bottom optoelectronic connection layer and connects the top electrical connection layer and the bottom optoelectronic connection layer, and then realizes the step-by-step manufacturing of the redistribution layer and the bottom optoelectronic connection layer without repeated baking for multiple times, so as to guarantee the structural stability and reliability of the optoelectronic packaging structure. Further, the optical waveguide structure is manufactured in the redistribution layer in steps, and the optical signal transmission channel and the electrical signal transmission channel are integrated in the same structure layer, so as to effectively increase the overall integration of the optoelectronic packaging structure, realize high-density packaging, and the overall manufacturing steps are simple and easy to realize, low in cost, and easy to realize large-scale production. The optoelectronic packaging structure of the embodiment arranges the optical waveguide structure in the redistribution layer, integrates the optical signal transmission channel and the electrical signal transmission channel in the same structure layer, effectively increases the overall integration of the optoelectronic packaging structure to realize high-density packaging, and meanwhile, the redistribution layer is obtained by distribution, so that the structural stability and reliability of the optoelectronic packaging structure are effectively guaranteed, and the application requirements of high reliability and high stability are met. Therefore, the present application effectively overcomes the shortcomings in the prior art and has high industrial utilization value.

[0097] The above embodiments only exemplarily illustrate the principles and effects of the present application, but are not used to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical thought of the present application should be covered by the claims of the present application.

Claims

1. A method for fabricating an optoelectronic packaging structure, characterized in that, The method comprises the following steps: providing a bottom optoelectronic connection layer and a top base layer, the bottom optoelectronic connection layer comprising a bottom electrical connection layer and a first optical waveguide layer embedded in the bottom electrical connection layer, the top base layer comprising a top electrical connection layer; arranging one side of the top base layer provided with the top electrical connection layer towards the bottom optoelectronic connection layer; connecting the top electrical connection layer and the bottom optoelectronic connection layer, wherein the bottom electrical connection layer and the top electrical connection layer form a rewiring layer.

2. The method of claim 1, wherein The method of providing a bottom optoelectronic connection layer comprises the following steps: providing a bottom base layer comprising a first electrical connection layer; forming a first optical waveguide layer on the bottom base layer, the first optical waveguide layer covering a part of the first electrical connection layer; forming a second electrical connection layer above the bottom base layer to form the bottom optoelectronic connection layer, the second electrical connection layer also covering the first optical waveguide layer, the first electrical connection layer and the second electrical connection layer forming the bottom electrical connection layer.

3. The method for fabricating the optoelectronic packaging structure according to claim 2, characterized in that, After connecting the top electrical connection layer and the bottom optoelectronic connection layer, the method further comprises the following steps: forming an opening through a part of the rewiring layer to expose at least a part of the first optical waveguide layer; forming a second optical waveguide layer in the opening, the second optical waveguide layer being connected to the first optical waveguide layer to form an optical waveguide structure.

4. The method of claim 3, wherein: The method further comprises the step of arranging an optical chip and an electrical chip above the rewiring layer to form an optoelectronic functional module with the rewiring layer, the optical chip having an optical signal output window arranged towards the second optical waveguide layer, the optical signal generated by the optical chip being emitted from the optical signal output window and transmitted through the optical waveguide structure.

5. The method of claim 4, wherein the step of forming the optoelectronic package structure further comprises: The method further comprises the following steps: arranging the optoelectronic functional module above a packaging substrate, the optoelectronic functional module being electrically connected to the packaging substrate; arranging an optical connector on the packaging substrate, an input end of the optical connector being arranged opposite to the first optical waveguide layer to receive the optical signal transmitted by the first optical waveguide layer.

6. The method for fabricating the optoelectronic packaging structure according to claim 4, characterized in that, The bottom base layer further comprises a bottom support layer, and the step of arranging the optoelectronic functional module above the packaging substrate comprises the following steps: removing the bottom support layer to expose one side of the first electrical connection layer facing away from the second electrical connection layer; forming a conductive bump on the exposed side of the first electrical connection layer; arranging the structure formed with the conductive bump above the packaging substrate and connecting the conductive bump to the packaging substrate.

7. The method of claim 1, wherein: The method of connecting the top electrical connection layer and the bottom optoelectronic connection layer comprises at least one of hybrid bonding and thermal compression bonding.

8. The method of claim 1, wherein: The top base layer further comprises a top support layer below the top electrical connection layer, and the method further comprises the step of removing the top support layer after connecting the top electrical connection layer and the bottom optoelectronic connection layer to transfer the top electrical connection layer to the bottom electrical connection layer.

9. The method of claim 8, wherein: The top base layer further comprises a top release layer between the top electrical connection layer and the top support layer, and the method of removing the top support layer comprises laser debonding.

10. An optoelectronic package structure, comprising: The method comprises: The rewiring layer includes a bottom electrical connection layer and a top electrical connection layer connected to the bottom electrical connection layer; The optical waveguide structure is embedded in the rewiring layer, and the optical waveguide structure includes a first optical waveguide layer located in the bottom electrical connection layer.

11. The optoelectronic package structure of claim 10, wherein: The method for connecting the top electrical connection layer and the bottom optical-electrical connection layer includes at least one of hybrid bonding and thermal compression bonding.

12. The optoelectronic package structure of claim 10, wherein: The optical waveguide structure further includes a second optical waveguide layer penetrating a portion of the rewiring layer and connected to the first optical waveguide layer to form the optical waveguide structure.

13. The optoelectronic package structure of claim 12, wherein: The optical-electrical packaging structure further includes an optical chip and an electrical chip, both of which are arranged above the rewiring layer to form an optical-electrical functional module with the rewiring layer, the optical chip has an optical signal output window arranged towards the second optical waveguide layer, and the optical signal generated by the optical chip is transmitted through the optical waveguide structure after being emitted from the optical signal output window.

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