MOS device and overheating prevention method therefor, controller, control system, and vehicle

Abstract

A MOS device and an overheating prevention method therefor, a controller (300), a control system, and a vehicle (600). The MOS device comprises: a device body (100) and a metal layer (200) provided on the surface of the device body (100).

Description

MOS device and overheat prevention method thereof, controller, control system and vehicle

[0001] Cross-reference to Related Applications

[0002] This application is based on and claims priority to Chinese Patent Application No. 202410686179.4, filed on May 29, 2024, the entire contents of which is incorporated herein by reference. TECHNICAL FIELD

[0003] The present application belongs to the technical field of semiconductor devices, and specifically relates to a MOS device and an overheat prevention method thereof, a controller, a control system and a vehicle. BACKGROUND

[0004] The existing metal-oxide-semiconductor field-effect transistor (MOS) has an internal resistance between PN junctions. When a large current passes through for a long time, a large amount of heat is generated at the PN junction. If the heat cannot be dissipated in time, the MOS transistor will work at high temperature for a long time, which will eventually cause the PN junction or the MOS transistor to burn out, and further cause the load to fail to work normally. SUMMARY

[0005] In view of the above-mentioned defects or deficiencies in the prior art, it is desirable to provide a MOS device and an overheat prevention method thereof, a controller, a control system and a vehicle, which can quickly dissipate the heat of the MOS device in time, avoid high temperature of the MOS device, and ensure the use performance of the MOS device.

[0006] In a first aspect, the present application provides a MOS device, comprising: a device body and a metal layer arranged on the surface of the device body.

[0007] In addition, the MOS device of the present application can have the following additional technical features:

[0008] Optionally, the metal layer is a thermosensitive metal layer, and the resistance value of the thermosensitive metal layer changes based on the temperature change of the device body.

[0009] Optionally, the metal layer is arranged on a non-welding surface of the device body.

[0010] Optionally, the device body has a gate electrode, and the gate electrode is configured to be electrically connected to a controller.

[0011] Optionally, a first pin and a second pin are arranged on the thermosensitive metal layer respectively, and the gate of the device body is electrically connected to the controller through the first pin and the second pin respectively.

[0012] Optionally, the device body further has a source and a drain, one of the source and the drain is electrically connected to the load, and the other is electrically connected to the power supply; and a diode is connected between the source and the drain.

[0013] Optionally, a first resistor is connected in series between the controller and the device body.

[0014] Or / and, a second resistor is connected in series between the controller and the load, and the second resistor is connected in parallel to the device body.

[0015] Or / and, a capacitor is connected in series between the controller and the load, and the capacitor is connected in parallel to the device body.

[0016] Optionally, the device body comprises any one of an N-channel enhancement mode MOS device, an N-channel depletion mode MOS device, a P-channel enhancement mode MOS device, or a P-channel depletion mode MOS device.

[0017] In a second aspect, the present application provides a method for preventing overheating of a MOS device, the method being based on the MOS device according to any one of the embodiments of the present application, and the method comprising:

[0018] obtaining an electrical property parameter value of a metal layer on a surface of the device body, the electrical property parameter comprising at least one of a voltage value, a current value, and a resistance value;

[0019] determining the temperature of the device body according to the electrical property parameter of the metal layer.

[0020] Optionally, the electrical property parameter comprises a resistance value, and the resistance value is obtained according to a current value of the metal layer and a preset voltage applied to the metal layer.

[0021] Optionally, if the temperature of the device body is greater than or equal to a preset temperature threshold, the device body is controlled to be turned off or the current of the device body is controlled to be reduced; and / or, if the temperature of the device body is less than the preset temperature threshold, the device body is controlled to be turned on.

[0022] In a third aspect, the present application provides a controller comprising a processor, the processor being connected to a memory, the processor storing a computer program, and the processor executing the computer program to implement the method for preventing overheating of a MOS device according to any one of the embodiments of the present application.

[0023] In a fourth aspect, the present application provides a control system, comprising the controller according to any of the embodiments of the present application and the MOS device according to any of the embodiments of the present application, wherein the MOS device is connected to the controller.

[0024] Optionally, the control system further comprises a load, wherein the MOS device is connected to the load, and the controller is connected to the load through the MOS device.

[0025] Optionally, the control system further comprises a power supply, wherein the MOS device is connected to the power supply, and the controller is connected to the power supply through the MOS device.

[0026] In a fifth aspect, the present application provides a vehicle, comprising the MOS device according to any of the embodiments of the present application, or comprising the controller according to any of the embodiments of the present application, or comprising the control system according to any of the embodiments of the present application.

[0027] According to the MOS device and the method for preventing overheating of the MOS device, the controller, the control system and the vehicle provided by the present application, the MOS device is provided with a metal layer on the surface of the MOS device, and the metal layer is used to quickly conduct the heat of the MOS device out, so as to improve the heat dissipation effect of the MOS device, avoid the temperature of the MOS device being too high, improve the bearing capacity of the MOS device when working under large current for a long time, and improve the reliability of the MOS device. BRIEF DESCRIPTION OF DRAWINGS

[0028] Other features, objects and advantages of the present application will become more apparent from the following detailed description of non-limiting embodiments, made with reference to the accompanying drawings:

[0029] Fig. 1 is a structural schematic diagram of a prior N-channel enhancement mode MOS device;

[0030] Fig. 2 is a circuit diagram of a prior N-channel enhancement mode MOS device;

[0031] Fig. 3 is an exemplary structural diagram of a MOS device according to an embodiment of the present application;

[0032] Fig. 4 is a control structural diagram of a MOS device according to an embodiment of the present application connected to a circuit;

[0033] Fig. 5 is an exemplary structural diagram of a controller according to an embodiment of the present application;

[0034] Fig. 6 is a schematic diagram of a vehicle according to an embodiment of the present application.

[0035] In the above figure: 100 device body; 110 P-type silicon substrate; 111 substrate lead; 120 N-type region; 121 source; 122 drain; 130 insulating layer; 131 gate; 140 diode; 150 first resistor; 160 second resistor; 170 capacitor; 200 metal layer; 210 first pin; 220 second pin; 300 controller; 400 load; 500 power supply; 600 vehicle. DETAILED DESCRIPTION

[0036] The application will be further described below in conjunction with the drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the related application, and not to limit the application. In addition, it should be noted that only the parts related to the application are shown in the drawings for ease of description.

[0037] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict. The present application will be described in detail below with reference to the drawings and in conjunction with the embodiments.

[0038] The terms used in the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the present application and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term "and / or" used herein means and includes any or all possible combinations of one or more associated listed items.

[0039] Unless otherwise required by the context, the term "comprises" is interpreted to mean "including, but not limited to" throughout the specification and claims.

[0040] In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to mean that a particular feature, structure, material or characteristic included in at least one embodiment or example of the present disclosure. The illustrative representation of the above terms does not necessarily mean the same embodiment or example. In addition, the specific features, structures, materials or characteristics described can be included in any one or more embodiments or examples in any appropriate manner.

[0041] The terms "first", "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more features. In the description of the embodiments of the present disclosure, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0042] As shown in FIG. 1, the existing MOS tube has internal resistance between PN junctions, and when a large current passes for a long time, the PN junctions generate a large amount of heat. If the heat cannot be dissipated in time, and the accumulated heat exceeds the range that the material can withstand, the PN junction or the entire MOS tube will be burned. Therefore, the existing MOS tube needs to be improved to improve the endurance of the MOS tube when working with a large current for a long time, and to improve the reliability of the MOS tube.

[0043] Referring to FIG. 2, in a first aspect of the embodiments of the present application, a MOS device is provided, which includes a device body 100 and a metal layer 200 arranged on the surface of the device body 100.

[0044] Specifically, the device body 100 is a conventional device in the art, and according to different conductive channels, the device body 100 can be divided into two types of N-channel and P-channel, and each type is divided into two types of enhancement type and depletion type. Therefore, the device body 100 includes any one of N-channel enhancement type MOS device, N-channel depletion type MOS device, P-channel enhancement type MOS device or P-channel depletion type MOS device.

[0045] Among them, the structure of the N-channel enhancement type MOS device is shown in FIG. 1 and FIG. 2, and the N-channel enhancement type MOS device uses a low-doped P-type silicon material as a substrate, two high-doped N-type regions 120 are manufactured on the P-type silicon substrate 110, and the two N-type regions 120 are used as the source 121 (S pole) and the drain 122 (D pole) by leading out the lead, wherein the source 121 is connected with the substrate lead 111 of the P-type substrate, and the other is the drain 122; A very thin oxide film (silicon dioxide) insulating layer 130 is covered on the surface of the P-type substrate, and an electrode is led out as the gate 131 (G pole). The gate 131 (G pole) of this field effect tube and the P-type semiconductor substrate, the drain 122 (D pole) and the source 121 (S pole) are all insulated, so it is also called insulated gate field effect tube. Among them, after the P-type substrate and the source 121 are connected, a PN junction is formed between the source 121 and the drain 122, which is a diode inside the device body 100.

[0046] In the embodiments of the present application, as shown in FIG. 3, a metal layer 200 is coated on the surface of the device body 100. The specific coating position and coating area size of the metal layer 200 can be set according to the use requirements, wherein the size of the coating area is adjusted and determined according to the size of the heat generated by the device body 100 and the speed at which the device body 100 needs to dissipate heat. It should be noted that the metal layer 200 is arranged on the non-welding surface of the device body 100. The device body 100 is generally a cuboid structure, and the bottom surface of the device body 100 is distributed with gate 131 pins, source 121 pins and drain 122 pins, which will be welded on the PCB circuit board. Therefore, the coating position of the metal layer 200 cannot be arranged on the welding surface of the device body 100 with pins, and the metal layer 200 can be coated on the non-welding surface of the device body 100, that is, on any one or more surfaces of the device body 100 except the bottom surface.

[0047] The metal layer 200 is filled with one or more metal materials, preferably metal materials with good heat dissipation, and the specific type of metal material can be set according to actual requirements. By coating the metal layer 200 on the surface of the device body 100, the heat dissipation effect of the MOS device can be improved, the temperature of the MOS device can be prevented from being too high, the endurance of the MOS device under long-time large-current working can be improved, and the reliability of the MOS device can be improved.

[0048] In some embodiments, as shown in FIG. 3, the metal layer 200 is a thermosensitive metal layer 200, and the resistance value of the thermosensitive metal layer 200 changes based on the temperature change of the device body 100.

[0049] Specifically, the thermosensitive metal layer 200 includes one or more thermosensitive metal materials, and the specific type of thermosensitive metal material can be set according to the electrical characteristics, heat generation characteristics and heat dissipation requirements of the actual device body 100. Thermosensitive metal materials are mainly divided into two types: one is a positive temperature coefficient, and its resistance value increases with the increase of temperature; the other is a negative temperature coefficient, and its resistance value decreases with the increase of temperature. The thermosensitive metal material has the following characteristics: temperature characteristic: the resistance value of the thermosensitive metal material changes with the change of temperature, and has a good linear relationship; resistance value change characteristic: the resistance value of the thermosensitive metal material changes with the change of temperature, and the change range is large. For example, the thermosensitive metal material can be platinum, rhodium, chromium, platinum-rhodium alloy, copper-nickel alloy, nickel-chromium alloy, tin oxide, nickel oxide, cobalt oxide, copper oxide, antimony oxide, iron oxide, etc.

[0050] The heat-sensitive metal layer 200 is coated on the surface of the device body 100, and the resistance value of the heat-sensitive metal material in the heat-sensitive metal layer 200 changes with the change of the temperature of the device body 100. When the heat-sensitive metal material changes in temperature, the crystal grain structure inside changes, thereby causing the resistance value to change. By measuring the resistance value of the heat-sensitive metal layer 200, since the resistance value of the heat-sensitive metal layer 200 is related to the temperature, the real-time temperature of the device body 100 can be obtained, which facilitates subsequent operations based on the real-time temperature of the device body 100, prevents the temperature of the device body 100 from being too high, avoids the PN junction or the device body 100 from being burned due to high temperature, and ensures the normal operation of the load 400 connected to the device body 100.

[0051] In some embodiments, as shown in FIG. 4, the device body 100 has a gate 131 configured to be electrically connected to the controller 300.

[0052] Specifically, the controller 300 is electrically connected to the gate 131 (G pole) of the device body 100, and the pressure value applied to the gate 131 of the device body 100 by the controller 300 can control the conduction or disconnection of the device body 100. The device body 100 is a commonly used power switching device, and its basic principle is to control the current in the circuit by using the electrical characteristics of the MOS field effect tube. The main part of the MOS tube is composed of an N-type channel and a P-type base, and a layer of insulating layer 130 is covered on the channel, which is called the gate 131. When the voltage applied to the gate 131 changes, the charge density in the channel also changes, thereby changing the conductivity of the channel.

[0053] For example, in an N-channel enhancement mode MOS device, when the controller 300 applies a positive voltage to the gate 131, or the voltage applied to the gate 131 is greater than the voltage threshold, the electrons in the N-channel will move to the P-type base to form a conductive path; when the controller 300 applies a negative or zero voltage to the gate 131, the electrons in the N-channel will move to the insulating layer 130, and the conductive path is disconnected.

[0054] In some embodiments, as shown in FIGS. 3 and 4, the heat-sensitive metal layer 200 is provided with a first pin 210 and a second pin 220, respectively, and the gate 131 of the device body 100 is electrically connected to the controller 300 through the first pin 210 and the second pin 220, respectively.

[0055] Specifically, the heat-sensitive metal layer 200 is electrically connected with the controller 300 through the first pin 210 (TM+) and the second pin 220 (TM-). The first pin 210 and the second pin 220 are in the same plane as the gate pin 131, the source pin 121 and the drain pin 122 of the device body 100, which facilitates soldering on a PCB (Printed Circuit Board) circuit board. When the resistance value of the heat-sensitive metal layer 200 changes with the temperature change of the surface of the device body 100, the current value flowing through the heat-sensitive metal layer 200 also changes synchronously, and thus the controller 300 can accurately measure the real-time temperature of the surface of the device body 100 by detecting the change of the current value flowing through the heat-sensitive metal layer 200.

[0056] The controller 300 monitors the real-time current between the first pin 210 and the second pin 220 on the heat-sensitive metal layer 200. Since the current value of the heat-sensitive metal layer 200 changes with the temperature change of the surface of the device body 100, the real-time temperature of the surface of the device body 100 can be obtained. When the controller 300 monitors that the real-time temperature of the surface of the device body 100 is greater than or equal to a preset temperature threshold, the controller 300 controls the device body 100 to be turned off by controlling the gate 131 (G pole) of the device body 100; otherwise, the device body 100 remains in the on state. By monitoring the surface temperature of the device body 100 and controlling the on or off of the device body 100 in the circuit, the overheat or overcurrent damage or burning of the MOS device is prevented, and the reliability and protection performance of the MOS device during operation are improved.

[0057] In some embodiments, the device body 100 also has a source 121 and a drain 122, one of which is electrically connected with a load 400, and the other of which is electrically connected with a power supply 500; a diode 140 is connected between the source 121 and the drain 122.

[0058] Specifically, the device body 100 generally has a gate 131 (G pole), a source 121 (S pole) and a drain 122 (D pole). As shown in FIG. 4, for an N-channel MOS device, the G pole of the N-channel MOS device is electrically connected with the controller 300, the S pole is electrically connected with the load 400, and the D pole is electrically connected with the power supply 500 (VCC). For a P-channel MOS device, the G pole of the P-channel MOS device is electrically connected with the controller 300, the S pole is electrically connected with the power supply 500 (VCC), and the D pole is electrically connected with the load 400.

[0059] As shown in FIG. 4, a diode 140 can be connected between the S pole and the D pole of the device body 100. When the voltage between the S pole and the D pole changes, the parasitic diode 140 of the device body 100 generates a cutoff voltage to prevent the PN junction of the MOS device from being broken down and causing damage to the device, thereby protecting the MOS device from excessive D pole voltage. The parasitic diode 140 of the MOS device can allow current to flow in both directions between the S pole and the D pole. When the D pole voltage is greater than the S pole voltage, the parasitic diode 140 of the MOS device exhibits normal diode 140 conduction characteristics. When the S pole voltage is greater than the D pole voltage, it exhibits reverse conduction.

[0060] In some embodiments, as shown in FIG. 4, a first resistor 150 is connected in series between the controller 300 and the device body 100.

[0061] Or / and, a second resistor 160 is connected in series between the controller 300 and the load 400, and the second resistor 160 is connected in parallel with the device body 100.

[0062] Or / and, a capacitor 170 is connected in series between the controller 300 and the load 400, and the capacitor 170 is connected in parallel with the device body 100.

[0063] Specifically, the first resistor 150 is connected in series on the wire connecting the controller 300 and the gate 131 of the device body 100. The resistance value of the first resistor 150 can be set according to actual needs. For example, the resistance value of the first resistor 150 is 10k. The first resistor 150 can prevent the MOS device from being damaged by overcurrent and improve the switching response speed of the MOS device.

[0064] Or / and, the second resistor 160 is connected in series on the wire connecting the controller 300 and the load 400, and the second resistor 160 is connected in parallel with the series circuit formed by the first resistor 150 and the device body 100. The resistance value of the second resistor 160 can be set according to actual needs. For example, the resistance value of the second resistor 160 is 100k. The second resistor 160 can prevent the MOS device from being damaged by overcurrent and improve the switching response speed of the MOS device.

[0065] Or / and, the capacitor 170 is connected in series on the wire connecting the controller 300 and the load 400, and the capacitor 170 is connected in parallel with the series circuit formed by the first resistor 150 and the device body 100. The capacitor 170 is connected in parallel with the second resistor 160. The capacitance value of the capacitor 170 can be set according to actual needs. For example, the capacitance value of the capacitor 170 is 1NF. The capacitor 170 is used to buffer voltage changes, stabilize the working state of the MOS device, and improve the frequency response characteristics of the MOS device.

[0066] Compared with the existing MOS device, the MOS device provided in the embodiment of the present application has faster heat dissipation efficiency, and has better overheat and overcurrent prevention effect in cooperation with the use of the controller 300, thereby improving the reliability and protection performance of the MOS device during operation.

[0067] It should be noted that the MOS device provided in the embodiment of the present application can be used in various types of switch control circuits, such as various types of control circuits carried on a vehicle.

[0068] For example, the power supply 500 module of a vehicle needs to perform various voltage conversions, among which commonly used are buck (voltage reduction) circuits, boost (voltage increase) circuits, etc. Whether it is voltage increase or voltage reduction, the MOS device provided in the embodiment of the present application can be continuously turned on or off to achieve the change of voltage.

[0069] For example, the power device of a vehicle generally has two types, resistive load and inductive load, and driving these two types of loads 400 requires current. Since the MOS device provided in the embodiment of the present application has extremely low on-resistance, the MOS device of the present application can be used to drive the power device of the resistive load and the inductive load.

[0070] For example, the MOS device provided in the embodiment of the present application can be used for high-low side driving of a vehicle. For low-side driving, one MOS device is used, and the MOS device is close to the ground end. Current is injected from the outside into the MOS device drive end. This type is called low-side driving, and whether the load 400 works or not is determined by controlling the opening and closing of the MOS device. For high-side driving, the MOS device is close to the power supply 500, and the MOS device drive end outputs current to the external load 400. This type is called high-side driving, and whether the load 400 works or not is also determined by controlling the opening and closing of the MOS device.

[0071] For example, the load 400 of a vehicle generally uses a half-bridge or full-bridge circuit for driving. The half-bridge circuit uses two MOS devices provided in the embodiment of the present application to work alternately, so that even if any one of the MOS devices fails, the load 400 can still work normally. Common applications of the load 400 include driving of fuel injection valves and motor driving. The full-bridge circuit has the advantages of the half-bridge circuit, and can also convert the direction of current flow, such as being applied to motor control to control the speed of the motor and control the forward and reverse rotation of the motor.

[0072] In a second aspect, the present application provides a MOS device overheat prevention method, which is based on the MOS device provided in any embodiment of the present application, and the method comprises:

[0073] acquire an electrical performance parameter value of the metal layer 200 on the surface of the device body 100, the electrical performance parameter including at least one of a voltage value, a current value, and a resistance value;

[0074] determine the temperature of the device body 100 according to the electrical performance parameter of the metal layer 200.

[0075] Specifically, the controller 300 acquires the electrical performance parameter value of the metal layer 200 through the first pin 210 and the second pin 220 on the surface of the metal layer 200, and determines the real-time temperature of the device body 100 according to the electrical performance parameter value. According to the real-time temperature of the device body 100, the controller 300 controls the on or off of the device body 100 to avoid the overheat of the MOS device. The heat on the surface of the device body 100 can be conducted more quickly through the metal layer 200 coated on the surface of the device body 100, which accelerates the heat dissipation effect of the device body 100, avoids the overheat of the MOS device, improves the bearing capacity of the MOS device in long-time and large-current working, improves the reliability of the MOS device, and ensures the long-term stable operation of the MOS device.

[0076] It can be understood that the MOS device of any embodiment of the present application is used to perform the anti-overheat method of the MOS device of the present application, and the specific anti-overheat method corresponds to the technical features and technical effects of the MOS device, which are consistent with the technical features and technical effects of the MOS device. The present application will not be repeated.

[0077] In some embodiments, the electrical performance parameter includes a resistance value, and the resistance value is obtained according to a current value of the metal layer 200 and a preset voltage applied to the metal layer 200.

[0078] Specifically, the metal layer 200 is a thermosensitive metal layer, and the resistance value of the thermosensitive metal layer changes with the temperature change of the device body 100. When the thermosensitive metal layer 200 on the surface of the device body 100 is electrically connected to the controller 300 through the first pin 210 and the second pin 220, the controller 300 applies a preset voltage U between the first pin 210 and the second pin 220 of the thermosensitive metal layer 200, and the controller 300 can obtain the real-time current value I of the thermosensitive metal layer 200 through the first pin 210 and the second pin 220. Since the thermosensitive metal layer 200 connected to the first pin 210 and the second pin 220 itself has a resistance value R, which changes with the temperature change of the device body 100, according to the preset voltage U applied to the metal layer 200 and the real-time current value I of the thermosensitive metal layer 200, the real-time resistance value of the thermosensitive metal layer 200 can be calculated by using the formula R = U / I. Since the resistance value of the thermosensitive metal layer 200 is related to the temperature change of the surface of the device body 100, the fitting curve of the resistance value of the thermosensitive metal layer 200 and the temperature of the surface of the device body 100 can be obtained in advance by function fitting or machine learning, and the real-time resistance value of the thermosensitive metal layer 200 can be substituted into the fitting curve to obtain the real-time temperature of the surface of the device body 100.

[0079] In some embodiments, if the temperature of the device body 100 is greater than or equal to a preset temperature threshold, the device body 100 is controlled to be turned off or the current of the device body 100 is controlled to be reduced; and / or if the temperature of the device body 100 is less than the preset temperature threshold, the device body 100 is controlled to be turned on.

[0080] Specifically, when the controller 300 monitors that the real-time temperature of the surface of the device body 100 is greater than or equal to a preset temperature threshold, at this time the device body 100 has a risk of overheating damage or burning, the controller 300 controls the device body 100 to be turned off or the current value through the device body 100 to be reduced by controlling the gate 131 (G pole) of the device body 100, so as to reduce the heat of the MOS device, thereby avoiding the damage or burning of the MOS device due to long-time overheating, and playing a role of protecting the MOS device in the circuit. When the controller 300 monitors that the real-time temperature of the surface of the device body 100 is less than the preset temperature threshold, the controller 300 controls the device body 100 to continue to be turned on.

[0081] The third aspect of the present application, as shown in FIG. 5, provides a controller 300, which comprises a processor 301 connected with a memory 302, the processor 301 stores a computer program, and the processor 301 executes the computer program to realize the anti-overheating method of the MOS device according to any embodiment of the present application.

[0082] Specifically, the controller 300 includes one or more processors (Central Processing Unit, CPU) 301, which can perform various appropriate actions and processes in accordance with a program stored in a Read-Only Memory (ROM) 302 or a program loaded from the storage section 308 into a Random Access Memory (RAM) 303. In the RAM 303, various programs and data required for the operation of the system are also stored. The CPU 301, the ROM 302, and the RAM 303 are connected to each other through a bus 304. An Input / Output (I / O) interface 305 is also connected to the bus 304.

[0083] Connected to the I / O interface 305 are an input section 306 including a keyboard, a mouse, etc.; an output section 307 including a display such as a Cathode Ray Tube (CRT), a Liquid Crystal Display (LCD), etc., and a speaker, etc.; a storage section 308 including a hard disk, etc.; and a communication section 309 including a network interface card such as a Local Area Network (LAN) card, a modem, etc. The communication section 409 performs communication processing via a network such as the Internet. A drive 310 is also connected to the I / O interface 305 as necessary. A removable recording medium 311 such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, etc. is attached to the drive 310 as necessary, so that a computer program read therefrom is installed in the storage section 308 as necessary.

[0084] In particular, the process of the method for preventing overheating of a MOS device provided by the embodiments of the present application can be implemented as a computer software program. For example, an embodiment of the present disclosure includes a computer program product comprising a computer program tangibly embodied on a machine-readable medium, the computer program containing program code for executing the method for preventing overheating of a MOS device. In such an embodiment, the computer program can be downloaded and installed from a network via the communication section 309, and / or installed from the removable recording medium 311.

[0085] The computer program product of the first aspect can include a computer readable storage medium. The computer readable storage medium can be a tangible medium that is readable by a computer or a hardware processor. The computer readable storage medium can include one or more of: volatile media, non-volatile media, removable media, and non-removable media.

[0086] In a fourth aspect of the present application, a control system is provided, which includes the controller 300 of any of the embodiments of the present application and the MOS device of any of the embodiments of the present application, and the MOS device is connected to the controller 300.

[0087] Specifically, the MOS device includes a device body 100 and a metal layer 200 arranged on the surface of the device body 100, the device body 100 has a gate 131, the controller 300 is electrically connected to the gate 131 of the device body 100, and the metal layer 200 is a thermosensitive metal layer, the thermosensitive metal layer has a first pin 210 and a second pin 220, and the gate 131 of the device body 100 is electrically connected to the controller 300 through the first pin 210 and the second pin 220. The controller 300 can obtain the current value flowing through the thermosensitive metal layer in real time through the first pin 210 and the second pin 220, and obtain the real-time resistance value of the thermosensitive metal layer according to the current value, and then determine the real-time temperature of the surface of the device body 100. If the temperature of the device body 100 is greater than or equal to a preset temperature threshold, the controller 300 controls the device body 100 to be disconnected or the current of the device body 100 to be reduced through the gate 131 of the device body 100; and / or, if the temperature of the device body 100 is less than the preset temperature threshold, the controller 300 controls the device body 100 to be turned on through the gate 131 of the device body 100, so as to avoid damage or burning of the MOS device due to long-term overheating, and to play a role in protecting the MOS device in the circuit.

[0088] In some embodiments, the control system further includes a load 400, the MOS device is connected to the load 400, and the controller 300 is connected to the load 400 through the MOS device.

[0089] Specifically, the skilled in the art can set the source 121 or the drain 122 of the device body 100 of the MOS device to be connected with the load 400 according to actual needs, and the controller 300 controls the MOS device to control whether the load 400 works, thereby guaranteeing the normal operation of the load 400.

[0090] In some embodiments, the control system further comprises a power supply 500, the MOS device is connected with the power supply 500, and the controller 300 is connected with the power supply 500 through the MOS device.

[0091] Specifically, one of the source 121 or the drain 122 of the device body 100 of the MOS device is connected with the load 400, and the other is connected with the power supply 500, thereby guaranteeing the normal operation of the load 400.

[0092] In the fifth aspect of the present application, a vehicle 600 is provided, which comprises the MOS device according to any of the embodiments of the present application, or comprises the controller 300 according to any of the embodiments of the present application, or comprises the control system according to any of the embodiments of the present application.

[0093] Specifically, the technical features and effects of the vehicle 600 of the present application are consistent with those of the MOS device, the controller 300 and the control system, and the embodiments of the present application will not be described again.

[0094] The above description is only the preferred embodiments of the present application and the explanation of the applied technical principles. The skilled in the art should understand that the scope of the application involved in the present application is not limited to the technical solutions formed by the specific combination of the technical features described above, and should also cover other technical solutions formed by the combination of the above technical features or their equivalent features without departing from the inventive concept. For example, the technical solutions formed by the mutual replacement of the above features and the technical features disclosed in the present application (but not limited to) having similar functions.

Claims

1. A MOS device, wherein, The MOS device comprises: a device body (100) and a metal layer (200) arranged on a surface of the device body (100).

2. The MOS device of claim 1, wherein, The metal layer (200) is a thermosensitive metal layer, and the resistance value of the metal layer (200) changes based on the temperature change of the device body (100).

3. The MOS device of claim 2, wherein, The metal layer (200) is arranged on a non-welding surface of the device body (100).

4. The MOS device of claim 2, wherein, The device body (100) has a gate electrode (131) configured to be electrically connected with a controller (300).

5. The MOS device of claim 4, wherein, The thermosensitive metal layer (200) is respectively provided with a first pin (210) and a second pin (220), and the gate electrode (131) of the device body (100) is electrically connected with the controller (300) through the first pin (210) and the second pin (220).

6. The MOS device of claim 4, wherein, The device body (100) further has a source electrode (121) and a drain electrode (122), one of which is electrically connected with a load (400), and the other is electrically connected with a power supply (500); and a diode (140) is connected between the source electrode (121) and the drain electrode (122).

7. The MOS device of claim 6, wherein, A first resistor (150) is connected in series between the controller (300) and the device body (100); Or / and, a second resistor (160) is connected in series between the controller (300) and the load (400), and the second resistor (160) is connected in parallel with the device body (100); Or / and, a capacitor (170) is connected in series between the controller (300) and the load (400), and the capacitor (170) is connected in parallel with the device body (100).

8. The MOS device of any one of claims 1-7, wherein, The device body (100) comprises any one of an N-channel enhancement mode MOS device, an N-channel depletion mode MOS device, a P-channel enhancement mode MOS device, or a P-channel depletion mode MOS device.

9. A method of preventing overheating of a MOS device, wherein, The method is based on the MOS device of any one of claims 1-8, and the method comprises: obtaining an electrical performance parameter value of the metal layer (200) on the surface of the device body (100), the electrical performance parameter comprising at least one of a voltage value, a current value, and a resistance value; determining the temperature of the device body (100) according to the electrical performance parameter of the metal layer (200).

10. The method of preventing overheating of a MOS device according to claim 9, wherein, The electrical performance parameter comprises a resistance value, which is obtained according to the current value of the metal layer (200) and a preset voltage applied to the metal layer (200).

11. The method of preventing overheating of a MOS device according to claim 9 or 10, wherein, The method further comprises: if the temperature of the device body (100) is greater than or equal to a preset temperature threshold, controlling the device body (100) to be turned off or controlling the current of the device body (100) to be reduced; and / or, if the temperature of the device body (100) is less than the preset temperature threshold, controlling the device body (100) to be turned on.

12. A controller (300), wherein The MOS device comprises a processor connected with a memory, the processor stores a computer program, and the processor executes the computer program to realize the anti-overheating method of the MOS device of any one of claims 9-11.

13. A control system, wherein, The MOS device of any one of claims 1-8 in connection with the controller (300) of claim 12.

14. The control system of claim 13, wherein, The control system further comprises a load (400), the MOS device is connected with the load (400), and the controller (300) is connected with the load (400) through the MOS device.

15. The control system of claim 13 or 14, wherein, The control system further comprises a power supply (500), the MOS device is connected with the power supply (500), and the controller (300) is connected with the power supply (500) through the MOS device.

16. A vehicle (600), wherein The MOS device of any one of claims 1-8; or The controller (300) of claim 12; or The control system of any one of claims 13-15.

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