Ring-shaped member and semiconductor manufacturing device

Abstract

A ring-shaped member according to the present disclosure is used in a semiconductor manufacturing device and has a first surface that is the inner circumferential surface thereof, a second surface that is the outer circumferential surface thereof, a third surface, a fourth surface, and one or more communication passages. The third surface connects the first surface and the second surface. The fourth surface is positioned opposite to the third surface. A first end of the communication passage in the longitudinal direction opens to the first surface, and a second end thereof in the longitudinal direction opens to the second surface or the fourth surface.

Description

Ring-shaped member and semiconductor manufacturing device

[0001] The present disclosure relates to a ring-shaped member and a semiconductor manufacturing apparatus.

[0002] Conventionally, semiconductor manufacturing apparatuses have been known that use plasma to perform plasma processing, such as etching, on a workpiece, such as a semiconductor wafer (hereinafter also referred to as a "wafer"). This type of semiconductor manufacturing apparatus may use one or more ring-shaped members with various functions around an electrostatic chuck that attracts and holds the substrate. For example, Patent Document 1 (JP-A-2003-125526) describes a semiconductor manufacturing apparatus that has a focus ring for focusing plasma on the wafer.

[0003] Japanese Patent Application Laid-Open No. 2021-44543

[0004] A ring-shaped member according to one aspect of the present disclosure is used in a semiconductor manufacturing apparatus and has a first surface that is an inner circumferential surface, a second surface that is an outer circumferential surface, a third surface, a fourth surface, and one or more communication passages. The third surface connects the first surface and the second surface. The fourth surface is located opposite the third surface. A first end of the communication passage in the longitudinal direction opens into the first surface, and a second end of the communication passage in the longitudinal direction opens into the second surface or the fourth surface.

[0005] FIG. 1 is a schematic cross-sectional view showing the configuration of a semiconductor manufacturing apparatus according to a first embodiment. FIG. 2 is a schematic cross-sectional view showing an enlarged portion of the semiconductor manufacturing apparatus according to the first embodiment. FIG. 3 is a schematic perspective view showing the configuration of a ring-shaped member according to the first embodiment. FIG. 4 is a schematic cross-sectional view showing an enlarged portion of the semiconductor manufacturing apparatus according to a second embodiment. FIG. 5 is a schematic cross-sectional view showing an enlarged portion of the semiconductor manufacturing apparatus according to a third embodiment. FIG. 6 is a schematic perspective view showing the configuration of a ring-shaped member according to a fourth embodiment. FIG. 7 is a schematic cross-sectional view showing an enlarged portion of the semiconductor manufacturing apparatus according to a fifth embodiment. FIG. 8 is a schematic perspective view showing the configuration of a ring-shaped member according to a sixth embodiment. FIG. 9 is a schematic plan view showing the configuration of a ring-shaped member according to the sixth embodiment. FIG. 10 is a schematic cross-sectional view showing an enlarged portion of the semiconductor manufacturing apparatus according to the sixth embodiment. FIG. 11 is a schematic perspective view showing the configuration of a ring-shaped member according to a seventh embodiment. FIG. 12 is a schematic perspective view showing another example of a ring-shaped member according to the seventh embodiment.

[0006] Hereinafter, a detailed description will be given of a ring-shaped member and a semiconductor manufacturing apparatus according to the present disclosure (hereinafter referred to as an "embodiment") with reference to the drawings. Note that the present disclosure is not limited to the embodiment. Furthermore, the embodiments can be appropriately combined as long as the processing content is not contradictory. Furthermore, the same components in the following embodiments are designated by the same reference numerals, and redundant description will be omitted.

[0007] Furthermore, in the following embodiments, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision or installation precision.

[0008] In addition, in the drawings referred to below, for ease of understanding, an orthogonal coordinate system may be shown in which the X-axis direction, Y-axis direction, and Z-axis direction, which are perpendicular to each other, are defined, and the positive Z-axis direction is the vertically upward direction.

[0009] Conventionally, semiconductor manufacturing apparatuses have been known that use plasma to perform plasma processing such as etching on a workpiece, such as a semiconductor wafer (hereinafter also referred to as a "wafer"), using plasma. This type of semiconductor manufacturing apparatus has a focus ring (hereinafter also referred to as a "ring-shaped member") that focuses the plasma on the wafer, and is disposed around an electrostatic chuck (hereinafter also referred to as a "stage") that attracts and holds the underside of the substrate (see Patent Document 1).

[0010] However, the focus ring described in Patent Document 1 leaves room for improvement in terms of improving the plasma resistance of the stage. For example, with the technology described in Patent Document 1, there is a risk that the stage may be corroded by plasma passing through the gap between the ring-shaped member and the stage.

[0011] Therefore, it is expected that a ring-shaped member capable of improving the plasma resistance of the stage will be realized.

[0012] First Embodiment First, the configuration of a semiconductor manufacturing apparatus 100 according to a first embodiment will be described with reference to FIGS. 1 to 3. FIG. 1 is a schematic cross-sectional view showing the configuration of the semiconductor manufacturing apparatus 100 according to the first embodiment. FIG. 2 is a schematic cross-sectional view showing an enlarged portion of the semiconductor manufacturing apparatus 100 according to the first embodiment. FIG. 3 is a schematic perspective view showing the configuration of a ring-shaped member 2 according to the first embodiment.

[0013] The semiconductor manufacturing apparatus 100 may include a stage 1 , a ring-shaped member 2 , a process gas inlet 4 , an upper electrode 5 , and an exhaust port 6 .

[0014] The stage 1 may be disposed inside the processing vessel 100a below an upper electrode 5, which will be described later. The stage 1 may include a base plate 10, a first stage 11, and a second stage 12. The wafer W may be, for example, a semiconductor substrate such as a silicon wafer.

[0015] The base plate 10 may be a conductive member. It may have a first portion 10a and a second portion 10b. The base plate 10 may not be divided into two parts but may be an integral unit. Furthermore, in the XY plane, the second portion 10b may be provided on the outer periphery of the disk-shaped first portion 10a. The second portion 10b may be annular. The base plate 10 may be provided with a gas inlet (not shown) through which a cooling gas such as helium is introduced. In the base plate 10, a first stage 11 may be provided on the first portion 10a, and a second stage 12 may be provided on the second portion 10b. The base plate 10 may be made of, for example, metal. The base plate 10 can function as a lower electrode.

[0016] The first stage 11 is a disk-shaped member and may have a first main surface 11a on which the wafer W is placed and a second main surface 11b located opposite the first main surface 11a. The first stage 11 may have multiple built-in electrodes 11c. The electrodes 11c may be connected to a chucking power supply (not shown). In the first stage 11, by applying a voltage from the chucking power supply to the electrodes 11c, an electric charge is generated on the first main surface 11a side of the electrodes 11c, and the wafer W can be attracted and held by electrostatic force. The first stage 11 is an example of a stage on which the wafer W can be placed.

[0017] The second stage 12 may be an annular member and may be arranged around the first stage 11. The second stage 12 may have a third main surface 12a on which the ring-shaped member 2 is placed and a fourth main surface 12b located opposite the third main surface 12a. The second stage 12 may have a plurality of built-in electrodes 12c. The electrodes 12c may be connected to an adsorption power supply (not shown). In the second stage 12, by applying a voltage to the electrodes 12c from the adsorption power supply, an electric charge is generated on the third main surface 12a side of the electrodes 12c, and the ring-shaped member 2 can be adsorbed and held by electrostatic force.

[0018] The ring-shaped member 2 may be an annular member and may be disposed around the first stage 11. Specifically, the ring-shaped member 2 may have a first surface 21, which is an inner peripheral surface, a second surface 22, which is an outer peripheral surface, a third surface 23, and a fourth surface 24. The first surface 21 may face the outer peripheral surface of the first stage 11. The third surface 23 may be located on one axial end side of the ring-shaped member 2, in this case, on the positive Z-axis direction side. The third surface 23 may be connected to the first surface 21 on a radially inner side of the ring-shaped member 2 and connected to the second surface 22 on a radially outer side of the ring-shaped member 2. The fourth surface 24 may be located on the other axial end side of the ring-shaped member 2, in this case, on the negative Z-axis direction side. The fourth surface 24 may be connected to the first surface 21 on a radially inner side of the ring-shaped member 2 and connected to the second surface 22 on a radially outer side of the ring-shaped member 2.

[0019] The ring-shaped member 2 may be made of a material whose main component is, for example, alumina, yttria, zirconia, silicon nitride, silicon carbide, aluminum nitride, YAG (yttrium aluminum garnet), or silicon.

[0020] The processing gas inlet 4 and the upper electrode 5 may be provided in the ceiling of the processing vessel 100a. An exhaust port 6 for evacuating the inside of the processing vessel 100a may be provided in the bottom plate of the processing vessel 100a.

[0021] In the semiconductor manufacturing apparatus 100 configured as described above, when a voltage (high-frequency voltage) is applied from a power supply (not shown) to the upper electrode 5 and the base plate 10, a high-frequency discharge occurs, and the process gas introduced into the processing vessel 100a is excited and activated by the plasma, thereby processing the target wafer W. During this process, there is a risk that the plasma will flow into the gap between the stage 1 and the ring-shaped member 2 and corrode the stage 1. Specifically, as shown in FIG. 2 , there is a risk that part of the plasma will pass through the gap S between the outer circumferential surface of the first stage 11 and the first surface 21 of the ring-shaped member 2 and corrode the base plate 10, the first stage 11, and the second stage 12.

[0022] Therefore, the ring-shaped member 2 according to the first embodiment has a communicating passage 25 for allowing plasma to flow. One end 25a of the communicating passage 25 opens to the first surface 21 of the ring-shaped member 2, and the other end 25b opens to the second surface 22 of the ring-shaped member 2. The communicating passage 25 may be a passage that runs from the opening 21a in the first surface 21 through the inside of the ring-shaped member 2 to the opening 22a in the second surface 22. The width of the communicating passage 25 may be, for example, 0.4 mm to 20 mm. The height of the communicating passage 25 may be, for example, 0.4 mm to 20 mm. The one end 25a is an example of a first end of the communicating passage 25 in the longitudinal direction. The other end 25b is an example of a second end of the communicating passage 25 in the longitudinal direction.

[0023] By providing the ring-shaped member 2 with the communicating passage 25 in this manner, plasma that flows into the gap S between the stage 1 and the ring-shaped member 2 passes from one end 25a to the other end 25b of the communicating passage 25 and flows to the outside, making the stage 1 less susceptible to corrosion by plasma. This makes it possible to improve the plasma resistance of the stage 1.

[0024] 3, the ring-shaped member 2 may have, for example, two communication passages 25. The two communication passages 25 may each extend along the radial direction of the ring-shaped member 2.

[0025] When the ring-shaped member 2 is seen through from above in the Z-axis direction in FIG. 2, the area ratio of the plurality of communication paths 25 in the ring-shaped member 2 may be 2% or more and 80% or less.

[0026] The cross-sectional shape of the communicating passage 25 may be circular. With this configuration, corners at which stress is likely to concentrate can be eliminated, compared to when the cross-sectional shape of the communicating passage 25 is square, and therefore the durability of the ring-shaped member 2 is improved.

[0027] The cross-sectional shape of the communicating passage 25 may be elliptical. With this configuration, the surface area of ​​the communicating passage 25 is increased, and the degreasing properties of the ring-shaped member 2 during its manufacture are improved.

[0028] Furthermore, the cross-sectional shape of the communicating passage 25 may be an ellipse that is elongated in the direction perpendicular to the third surface 23 or the fourth surface 24, in this case the Z-axis direction. This makes it possible to improve the strength of the ring-shaped member 2 in the direction perpendicular to the third surface 23 or the fourth surface 24.

[0029] <Method of Manufacturing Ring-Shaped Member 2> Next, an example of a method of manufacturing the ring-shaped member 2 according to the first embodiment will be described.

[0030] First, raw material powder such as alumina, yttria, zirconia, silicon nitride, silicon carbide, or aluminum nitride is used to form the ring-shaped member 2. In this case, the ring-shaped member 2 may be formed by mixing the raw material powder, a binder, and a sintering aid together, forming the raw material into a sheet, and then stacking a plurality of such sheets to form a laminate. Alternatively, the ring-shaped member 2 may be formed by cold isostatic pressing (CIP).

[0031] Next, the molded body of the ring-shaped member 2 is cut to form the communicating passages 25. When the cross-sectional shape of the communicating passages 25 is circular, this is done by drilling using a machining machine, which makes it easier to form the communicating passages 25 than when the communicating passages 25 have other shapes. Furthermore, in the case of a ring-shaped member 2 in which a plurality of laminates are stacked, the communicating passages 25 are formed by molding a laminate that has been previously formed into a shape corresponding to the communicating passages 25, so this step may be omitted.

[0032] Next, the ring-shaped member 2 is degreased. Because the ring-shaped member 2 has the communicating passages 25, the volume of the ring-shaped member 2 is reduced by the volume of the communicating passages 25, and the surface area is increased by the inner walls of the communicating passages 25. Therefore, the ring-shaped member 2 has good degreasing properties.

[0033] Next, the compact of the ring-shaped member 2 is fired and ground. Thereafter, the ring-shaped member 2 is washed with a cleaning liquid. In this case, if the communicating passages 25 extend obliquely with respect to the third surface 23 or the fourth surface 24, the cleaning liquid can easily flow through the communicating passages 25. This point will be described later in the second embodiment.

[0034] Although the process of molding and firing raw material powder has been described above, it may also be possible to manufacture the material from a crystalline ingot, such as a crystalline ingot of YAG or silicon.

[0035] In this manner, the ring-shaped member 2 according to the first embodiment is manufactured.

[0036] As described above, the ring-shaped member 2 according to the first embodiment has a communication passage 25 whose one end 25a opens to the first surface 21 of the ring-shaped member 2 and whose other end 25b opens to the second surface 22 of the ring-shaped member 2. With this configuration, plasma that flows into the gap S between the stage 1 and the ring-shaped member 2 passes from one end 25a to the other end 25b of the communication passage 25 and flows to the outside, making the stage 1 less susceptible to corrosion by plasma. This improves the plasma resistance of the stage 1.

[0037] Although an example has been shown here in which the other end 25b of the communicating passage 25 opens to the second surface 22 of the ring-shaped member 2, the other end 25b of the communicating passage 25 may also open to the fourth surface 24 of the ring-shaped member 2. In this case as well, the plasma flows from one end 25a of the communicating passage 25 through the other end 25b to the outside, making it less likely that the stage 1 will be corroded by the plasma. Furthermore, the other end 25b of the communicating passage 25 may also open to both the second surface 22 and the fourth surface 24 of the ring-shaped member 2. This point will be described later in the third embodiment.

[0038] Furthermore, although an example in which the ring-shaped member 2 has two communicating passages 25 has been described here, the number of communicating passages 25 is not limited to this. For example, the ring-shaped member 2 may have one communicating passage 25, or may have three or more communicating passages 25. An example in which three or more communicating passages 25 are provided will be described later in the fourth embodiment.

[0039] Although an example in which the cross-sectional shape of the ring-shaped member 2 is circular has been shown here, the cross-sectional shape of the ring-shaped member 2 is not limited to this. For example, the cross-sectional shape of the ring-shaped member 2 may be rectangular.

[0040] Furthermore, when the ring-shaped member 2 is insulating, the ring-shaped member 2 may include an electrode (not shown). The electrode may have functions such as resistance heating, electrostatic adsorption, or high-frequency electrode. When the ring-shaped member 2 includes an electrode, a known lamination method or a conductive paste printing method may be used as a manufacturing method. Furthermore, as a method for supplying power to the electrode, for example, a cavity may be provided from the fourth surface 24 toward the electrode so as to avoid the communicating path 25, and the cavity may be connected to a power supply terminal, and electricity may be supplied from an external power source.

[0041] Furthermore, a further ring-shaped member 2 may be provided on the third surface 23 of the ring-shaped member 2. Such a ring-shaped member 2 may have or may not have a communicating passage 25.

[0042] Second Embodiment Fig. 4 is a schematic cross-sectional view of an enlarged portion of a semiconductor manufacturing apparatus 100 according to a second embodiment. The communicating path 25 may extend obliquely from one end 25a to the other end 25b with respect to the third surface 23 or the fourth surface 24. Specifically, as shown in Fig. 4, the communicating path 25 may extend in a direction approaching the fourth surface 24 as it moves from the one end 25a to the other end 25b.

[0043] When the communicating passages 25 extend obliquely relative to the third surface 23 or the fourth surface 24 in this way, the cleaning liquid more easily flows from one end 25a to the other end 25b or from the other end 25b to the one end 25a when cleaning the ring-shaped member 2, compared to when the communicating passages 25 extend in a direction parallel to the third surface 23. Furthermore, because the length of the communicating passages 25 is longer than when the communicating passages 25 extend in a direction parallel to the third surface 23, the volume of the ring-shaped member 2 is reduced, and the degreasing ability of the ring-shaped member 2 during manufacturing is improved.

[0044] Furthermore, as shown in FIG. 4, the communication path 25 extends in a direction approaching the fourth surface 24 from the one end 25a to the other end 25b, which makes it easier for plasma to flow from the one end 25a to the other end 25b.

[0045] The opening 21a of the communicating passage 25 in the first surface 21 may be located at a position on the first surface 21 that is close to the third surface 23. For example, where S1 is the dimension of the first surface 21 in the Z-axis direction, a position within S1 / 3 from the third surface 23 is set as the position close to the third surface 23. This allows the plasma flowing through the gap between the stage 1 and the ring-shaped member 2 to be guided to the communicating passage 25 more quickly, making the stage 1 less susceptible to corrosion by the plasma.

[0046] Similarly, the opening 22a in the second surface 22 of the communicating passage 25 may be located at a position on the second surface 22 closer to the fourth surface 24. For example, where S2 is the dimension of the second surface 22 in the Z-axis direction, a position within S2 / 3 from the fourth surface 24 is considered to be a position closer to the fourth surface 24. In this way, the closer the opening 21a is to the third surface 23 on the first surface 21 and the closer the opening 22a is to the fourth surface 24 on the second surface 22, the longer the length of the communicating passage 25. This reduces the volume of the ring-shaped member 2 and improves the degreasing properties of the ring-shaped member 2 during manufacturing. Note that when the opening 22a is located on the fourth surface 24, the opening 22a may be located at a position on the fourth surface 24 closer to the second surface 22.

[0047] Although an example in which the communicating passage 25 extends obliquely with respect to the third surface 23 or the fourth surface 24 has been shown here, the communicating passage 25 may extend obliquely with respect to the radial direction from one end 25 a to the other end 25 b. In this case as well, the length of the communicating passage 25 is longer than when the communicating passage 25 extends along the radial direction, so that the volume of the ring-shaped member 2 is reduced and the degreasing ability of the ring-shaped member 2 during manufacturing is improved.

[0048] Third Embodiment FIG. 5 is a schematic cross-sectional view of an enlarged portion of a semiconductor manufacturing apparatus 100 according to a third embodiment. As shown in FIG. 5 , the communicating passage 25 may have a branch passage 26. In the example of FIG. 5 , one end 25 a of the communicating passage 25 opens to the first surface 21 and the other end 25 b opens to the fourth surface 24. The branch passage 26 branches off from the communicating passage 25 and opens to the second surface 22. This configuration allows the volume and passage area of ​​the communicating passage 25 to be increased compared to when the communicating passage 25 does not branch, thereby reducing the volume of the ring-shaped member 2 and improving the degreasing properties of the ring-shaped member 2. The passage area refers to the area of ​​the inner wall surface of the communicating passage 25.

[0049] The communication passage 25 may have a plurality of branch passages 26. The more branch passages 26 there are, the greater the volume and passage area of ​​the communication passage 25 can be, which reduces the volume of the ring-shaped member 2 and improves the degreasing properties of the ring-shaped member 2.

[0050] (Fourth Embodiment) Fig. 6 is a schematic perspective view showing the configuration of a ring-shaped member 2 according to a fourth embodiment. As shown in Fig. 6, the ring-shaped member 2 may have three or more communicating passages 25. The multiple communicating passages 25 may be positioned at equal intervals along the circumferential direction of the ring-shaped member 2. The more communicating passages 25 there are, the more plasma can be released to the outside through the communicating passages 25, making the stage 1 less susceptible to corrosion by plasma. Furthermore, the more communicating passages 25 there are, the more the volume and passage area of ​​the communicating passages 25 can be increased, thereby reducing the volume of the ring-shaped member 2 and improving the degreasing properties of the ring-shaped member 2.

[0051] Fifth Embodiment FIG. 7 is a schematic cross-sectional view of a portion of a semiconductor manufacturing apparatus 100 according to a fifth embodiment. The cross-sectional area of ​​one end 25 a or the other end 25 b of a communicating passage 25 may be larger than the cross-sectional area of ​​an intermediate portion 25 c of the communicating passage 25. In the example shown in FIG. 7 , the width of the communicating passage 25 in the Z-axis direction decreases from the one end 25 a toward the intermediate portion 25 c. Furthermore, the width of the communicating passage 25 in the Z-axis direction increases from the intermediate portion 25 c toward the other end 25 b. This configuration facilitates plasma flow into the communicating passage 25. Furthermore, plasma is easily released from the communicating passage 25 to the outside. The cross-sectional area refers to the area of ​​the communicating passage 25 in a cross section of the ring-shaped member 2 that intersects approximately perpendicularly with the direction extending from the first surface 21 to the second surface 22 of the ring-shaped member 2.

[0052] The cross-sectional area of ​​the communication passage 25 may change in stages. That is, the side surface of the communication passage 25 may have a step.

[0053] Sixth Embodiment FIG. 8 is a schematic perspective view showing the configuration of a ring-shaped member 2 according to a sixth embodiment. FIG. 9 is a schematic plan view showing the configuration of a ring-shaped member 2 according to the sixth embodiment. FIG. 10 is a schematic cross-sectional view showing an enlarged portion of a semiconductor manufacturing apparatus 100 according to the sixth embodiment. As shown in FIG. 8 , the ring-shaped member 2 may be composed of a plurality of first members 28 arranged in the axial direction of the ring-shaped member 2, in this case, the Z-axis direction. In this case, adjacent first members 28 may be connected by a plurality of support columns 30. In a ring-shaped member 2 configured in this manner, the spaces between adjacent first members 28 serve as paths for flowing plasma.

[0054] In this case as well, the plasma that flows into the gap between the stage 1 and the ring-shaped member 2 passes through the space between adjacent first members 28 from the inner periphery to the outer periphery of the ring-shaped member 2 and flows to the outside, making the stage 1 less susceptible to corrosion by the plasma. This improves the plasma resistance of the stage 1.

[0055] Furthermore, since the space through which the plasma flows is larger than when the ring-shaped member 2 has the communicating passage 25, a large amount of plasma can be released to the outside, making the stage 1 less susceptible to corrosion by the plasma. Furthermore, by dividing the ring-shaped member 2 into multiple first members 28, handling is improved. Even if distortion occurs in one first member 28, it is unlikely to affect the other first members 28, and distortion is unlikely to occur in the ring-shaped member 2 as a whole. Therefore, the flatness of the ring-shaped member 2 can be improved compared to when the ring-shaped member 2 is composed of a single member.

[0056] 9 , the multiple support columns 30 may be arranged at equal intervals along the circumferential direction of the ring-shaped member 2. The multiple support columns 30 may be arranged in a position close to the second surface 22 of the ring-shaped member 2 in a plan view. Specifically, the multiple support columns 30 may be arranged radially outward from the radial intermediate position 28a of the first member 28. With this configuration, there are no support columns 30 in a position close to the first surface 21 of the ring-shaped member 2, and therefore more plasma can be guided from the first surface 21 side to the outside.

[0057] As shown in FIG. 9, when the ring-shaped member 2 is seen through from a plane in the Z-axis direction in the drawing, the area ratio of the plurality of support columns 30 in the ring-shaped member 2 may be 20% or more.

[0058] Seventh Embodiment FIG. 11 is a schematic perspective view showing the configuration of a ring-shaped member 2 according to a seventh embodiment. FIG. 12 is a schematic perspective view showing another example of a ring-shaped member 2 according to the seventh embodiment. As shown in FIGS. 11 and 12 , the ring-shaped member 2 may be composed of a plurality of second members 29 arranged in the circumferential direction of the ring-shaped member 2. The plurality of second members 29 are evenly arranged along the circumferential direction of the ring-shaped member 2. In the example shown in FIG. 11 , each of the plurality of second members 29 has a communication passage 25. In the example shown in FIG. 12 , the ring-shaped member 2 includes two first members 28 each composed of a plurality of second members 29 arranged in the circumferential direction of the ring-shaped member 2. The two first members 28 are arranged at an interval along the axial direction of the ring-shaped member 2. The two first members 28 are connected to each other by a plurality of struts 30.

[0059] In this case as well, the plasma that flows into the gap between the stage 1 and the ring-shaped member 2 flows to the outside via the communicating passage 25 or the space between the first members 28 that are adjacent in the axial direction of the ring-shaped member 2, making the stage 1 less susceptible to corrosion by the plasma. This makes it possible to improve the plasma resistance of the stage 1.

[0060] Furthermore, by dividing the ring-shaped member 2 into multiple second members 29, handling is improved. This makes it possible to replace only the second members 29 that require repair, thereby reducing the cost of replacing the ring-shaped member 2. Furthermore, by dividing the outer periphery of the ring-shaped member 2, which is prone to warping and deformation, it is possible to reduce distortion that occurs in each of the second members 29. Furthermore, by dividing the ring-shaped member 2 along a straight line extending radially from the center of the ring-shaped member 2, it is possible to align the direction of distortion of each of the second members 29.

[0061] The present technology may also be configured as follows. (1) A ring-shaped member (for example, ring-shaped member 2) is used in a semiconductor manufacturing apparatus (for example, semiconductor manufacturing apparatus 100), and has a first surface (for example, first surface 21) that is an inner circumferential surface, a second surface (for example, second surface 22) that is an outer circumferential surface, a third surface (for example, third surface 23), a fourth surface (for example, fourth surface 24), and one or more communication paths (for example, communication path 25). The third surface connects the first surface and the second surface. The fourth surface is located opposite the third surface. A first end (for example, one end 25a) of the communication path in the longitudinal direction opens to the first surface, and a second end (for example, the other end 25b) of the communication path in the longitudinal direction opens to the second surface or the fourth surface. (2) In the ring-shaped member described in (1) above, the second end of the communicating passage may open to the second surface, and the communicating passage may extend from the first end toward the second end at an angle relative to the third surface or the fourth surface. (3) In the ring-shaped member described in (2) above, the communicating passage may extend in a direction approaching the fourth surface as it moves from the first end toward the second end. (4) In the ring-shaped member described in any one of (1) to (3) above, the communicating passage may have a branch passage (branch passage 26, for example). (5) In the ring-shaped member described in any one of (1) to (4) above, the cross-sectional shape of the communicating passage may be circular. (6) In the ring-shaped member described in any one of (1) to (4) above, the cross-sectional shape of the communicating passage may be elliptical. (7) In the ring-shaped member described in any one of (1) to (4) above, the cross-sectional shape of the communicating passage may be elliptical, elongated in a direction perpendicular to the third surface or the fourth surface. (8) The ring-shaped member described in any one of (1) to (7) above may have a plurality of communication passages. (9) In the ring-shaped member described in any one of (1) to (8) above, the passage cross-sectional area of ​​the first end or the second end of the communication passage may be larger than the passage cross-sectional area of ​​the intermediate portion of the communication passage (e.g., intermediate portion 25c). (10) The ring-shaped member described in any one of (1) to (9) above may be composed of a plurality of first members (e.g., first member 28) lined up in the axial direction of the ring-shaped member, and adjacent first members may be connected to each other by a plurality of support columns (e.g., support columns 30).(11) In the ring-shaped member described in (10) above, the multiple support columns may be positioned near the second surface of the ring-shaped member in a plan view. (12) In the ring-shaped member described in any one of (1) to (11) above, the ring-shaped member may be composed of multiple second members (e.g., second members 29) lined up in a circumferential direction of the ring-shaped member. (13) A semiconductor manufacturing apparatus (e.g., semiconductor manufacturing apparatus 100) may have a stage (e.g., first stage 11) on which a substrate can be placed and a ring-shaped member arranged around the stage, and the ring-shaped member may have a first surface that is an inner circumferential surface, a second surface that is an outer circumferential surface, a third surface connecting the first surface and the second surface, a fourth surface located opposite the third surface, and a communicating passage whose first end in the longitudinal direction opens to the first surface and whose second end in the longitudinal direction opens to the second surface or the fourth surface.

[0062] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0063] REFERENCE SIGNS LIST 1 stage 2 ring-shaped member 10 base plate 11 first stage 12 second stage 21 first surface 22 second surface 23 third surface 24 fourth surface 25 communication path 28 first member 29 second member 30 support 100 semiconductor manufacturing device

Claims

1. A ring-shaped component for use in semiconductor manufacturing equipment, comprising: a first surface which is the inner circumferential surface; a second surface which is the outer circumferential surface; a third surface connecting the first surface and the second surface; a fourth surface positioned opposite the third surface; and one or more communication passages, the first end of which in the longitudinal direction opens into the first surface and the second end of which in the longitudinal direction opens into the second surface or the fourth surface.

2. A ring-shaped member according to claim 1, wherein the second end of the communication passage opens into the second surface, and the communication passage extends from the first end toward the second end at an angle relative to the third surface or the fourth surface.

3. The ring-shaped member according to claim 2, wherein the communication passage extends in a direction approaching the fourth surface as it moves from the first end toward the second end.

4. A ring-shaped member according to any one of claims 1 to 3, wherein the communication passage has a branch passage.

5. A ring-shaped member according to any one of claims 1 to 4, wherein the cross-sectional shape of the communication passage is circular.

6. A ring-shaped member according to any one of claims 1 to 4, wherein the cross-sectional shape of the communication passage is elliptical.

7. A ring-shaped member according to any one of claims 1 to 4, wherein the cross-sectional shape of the communication passage is an ellipse that is long in a direction perpendicular to the third surface or the fourth surface.

8. The ring-shaped member according to any one of claims 1 to 7, which has a plurality of said communication passages.

9. A ring-shaped member according to any one of claims 1 to 8, wherein the cross-sectional area of ​​the communication passage at the first end or the second end is larger than the cross-sectional area of ​​the communication passage at an intermediate portion thereof.

10. A ring-shaped member according to any one of claims 1 to 9, wherein the ring-shaped member is composed of a plurality of first members arranged in the axial direction of the ring-shaped member, and adjacent first members are connected by a plurality of supports.

11. The ring-shaped member according to claim 10, wherein the plurality of support posts are arranged in a position close to the second surface of the ring-shaped member in a plan view.

12. A ring-shaped member according to any one of claims 1 to 11, wherein the ring-shaped member is composed of a plurality of second members arranged in the circumferential direction of the ring-shaped member.

13. A semiconductor manufacturing device comprising: a stage on which a substrate can be placed; and a ring-shaped member arranged around the stage, wherein the ring-shaped member has: a first surface which is an inner circumferential surface; a second surface which is an outer circumferential surface; a third surface which connects the first surface and the second surface; a fourth surface located opposite the third surface; and a communication passage whose first end in the longitudinal direction opens into the first surface and whose second end in the longitudinal direction opens into the second surface or the fourth surface.

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