Remover composition for light irradiation removal

Abstract

For the purpose of manufacturing a fan-out semiconductor package, the present invention provides a remover composition for light irradiation removal, the remover composition making it possible to form a remover layer having improved adhesion to a support substrate in a layered body having the support substrate, the remover layer, a metal layer, and a wiring layer in the stated order. The present invention also provides a layered body and a method for manufacturing a fan-out semiconductor package in which said remover composition for light irradiation removal is used.　This remover composition for light irradiation removal is used for forming a remover layer for light irradiation removal in a layered body in which a light-transmissive support substrate, the remover layer for light irradiation removal, a metal layer, and a wiring layer are layered in the stated order. The remover composition for light irradiation removal contains: a resin having at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring; an epoxy-based crosslinking agent; and a solvent.

Description

Stripping composition for light irradiation stripping

[0001] The present invention relates to a release agent composition for light irradiation stripping, a laminate, a method for producing a fan-out type semiconductor package, and a method for producing a processed semiconductor substrate or electronic device substrate.

[0002] Examples of technologies for semiconductor packages (electronic components) that include semiconductor elements include fan-in technology and fan-out technology. Known semiconductor packages using fan-in technology include fan-in WLP (Fan-in Wafer Level Package), in which terminals at the end of a bare chip are rearranged within the chip area. Known semiconductor packages using fan-out technology include fan-out WLP (Fan-out Wafer Level Package), in which the terminals are rearranged outside the chip area.

[0003] In wafer-level packaging, there are two methods for manufacturing fan-out semiconductor packages: a mold-first method and a RDL-first method. In the mold-first method, a redistribution layer is formed after forming an encapsulation layer that encapsulates a semiconductor chip on a support base. In the RDL-first method, a redistribution layer is formed on the support base, and then a semiconductor chip is mounted on the redistribution layer and an encapsulation layer is formed (see, for example, Patent Document 1). After the semiconductor package is manufactured, the support base is peeled off from the encapsulation layer or redistribution layer. The RDL-first method has advantages such as easy formation of a fine redistribution layer and the ability to mount expensive semiconductor chips only on properly formed redistribution layers.

[0004] In order to peel off the support base after manufacturing a semiconductor package, a method of forming a separation layer on the support base is adopted. For example, Patent Document 2 discloses a method of manufacturing a laminate in which a light-transmitting support base and a substrate are bonded together via a light-to-heat conversion layer (separation layer) and an adhesive layer provided on the support base side, the substrate is processed, and then radiant energy (light) is irradiated from the support base side to the separation layer to alter and decompose the separation layer, thereby separating the processed substrate and the support base.

[0005] JP 2022-025328 A JP 2004-64040 A

[0006] For example, in the above-mentioned RDL fast, when the supporting substrate and the sealing layer or rewiring layer are peeled off by laser irradiation, a configuration is conceivable in which a separation layer (also referred to as a release agent layer in the present invention) that is altered and decomposed by laser irradiation is disposed between the supporting substrate and the sealing layer or rewiring layer. In this case, in a laminate having a supporting substrate, a separation layer, and a rewiring layer in this order, for example, when the rewiring layer has a multilayer structure and multiple rewiring layers are stacked, it has been found that warping of the separation layer occurs if the adhesion between the supporting substrate and the separation layer is weak. In order to prevent such warping of the separation layer, it is necessary to improve the adhesion performance between the supporting substrate and the separation layer. Furthermore, even in a laminate having a supporting substrate, a separation layer, an adhesive layer, and a processed substrate in this order, as described in Patent Document 2, it is desirable for the supporting substrate and the separation layer to be strongly adhered to each other before being subjected to the separation process. With recent further advances in the semiconductor field, there is a constant demand for improved adhesion performance between the separation layer and the supporting substrate.

[0007] The present invention has been made in view of the above circumstances. An object of the present invention is to provide a release agent composition for light-based peeling, which is capable of forming a release agent layer with improved adhesion to a support substrate in a laminate having, in this order, a support substrate, a release agent layer, a metal layer, and a wiring layer (also referred to as a rewiring layer), for example, to produce a fan-out semiconductor package. Another object of the present invention is to provide a laminate and a method for producing a fan-out semiconductor package using the release agent composition for light-based peeling. Another object of the present invention is to provide a release agent composition for light-based peeling, which is applicable not only to the production of fan-out semiconductor packages but also to the production of processed semiconductor substrates or electronic device substrates. For example, an object of the present invention is to provide a release agent composition for light-based peeling, which is capable of forming a release agent layer with improved adhesion to a support substrate in a laminate having, in this order, a support substrate, a release agent layer, an adhesive layer, and a semiconductor substrate or electronic device substrate, for example, to produce a processed semiconductor substrate or electronic device substrate. Another object of the present invention is to provide a method for producing a laminate and a processed semiconductor substrate or electronic device substrate using the release agent composition for light-based peeling.

[0008] The present inventors have conducted extensive research to solve the above problems, and as a result have found that the above problems can be solved, and have completed the present invention having the following gist.

[0009] That is, the present invention includes the following: [1] A release agent composition for light-based peeling, for forming a release agent layer for light-based peeling in a laminate having a light-transmitting support substrate, a release agent layer for light-based peeling, a metal layer, and a wiring layer laminated in this order, the release agent composition comprising a resin having at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring, an epoxy-based crosslinking agent, and a solvent. [2] A release agent composition for light-based peeling, for forming a release agent layer for light-based peeling in a laminate having a light-transmitting support substrate, a release agent layer for light-based peeling, an adhesive layer, and a semiconductor substrate or an electronic device substrate laminated in this order, the release agent composition for light-based peeling, for forming a release agent layer for light-based peeling, the release agent composition comprising a resin having at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring, an epoxy-based crosslinking agent not having a siloxane skeleton, and a solvent. [3] The stripping composition for stripping by light irradiation according to [1] or [2], wherein the resin having at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring is a novolak resin. [4] The stripping composition for stripping by light irradiation according to [3], wherein the novolak resin contains at least one of a structural unit represented by the following formula (C1-1), a structural unit represented by the following formula (C1-2), and a structural unit represented by the following formula (C1-3): (In the formula, C １ represents a group derived from an aromatic compound containing a nitrogen atom. ２ represents a group containing a tertiary or quaternary carbon atom and having at least one member selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring in a side chain, or represents a methylene group. ３ represents a group derived from an aliphatic polycyclic compound. ４ represents a group derived from phenol, a group derived from bisphenol, a group derived from naphthol, a group derived from biphenyl, or a group derived from biphenol. ５ represents a single bond or a group having a structure derived from styrene. １ , C ２and C ５ At least one of the following has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring. １ , C ３ and C ５ At least one of the following has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring. ２ , C ４ and C ５ at least one of the following has a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring.) [5] The stripping composition for light irradiation stripping according to [4], wherein the novolak resin contains, as the structural unit represented by formula (C1-1), at least one of a structural unit represented by formula (C1-1-1) below and a structural unit represented by formula (C1-1-2) below: (In formula (C1-1-1) and formula (C1-1-2), R ９０１ and R ９０２ represents a substituent substituted on the ring, and each independently represents a halogen atom, a nitro group, a cyano group, an amino group, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. ９０３ represents a hydrogen atom, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. ９０４ represents a hydrogen atom, an optionally substituted aryl group, or an optionally substituted heteroaryl group. ９０５ represents an optionally substituted alkyl group, an optionally substituted aryl group, or an optionally substituted heteroaryl group. ９０４ and R ９０５ may be bonded to each other to form a divalent group. ９０１ and Ar ９０２ each independently represents an aromatic ring. １ and X ２each independently represents a hydroxy group or a carboxy group. １ represents a single bond or a group having a structure derived from styrene. １ and h ２ Each of k independently represents an integer of 0 to 3. １ and k ２ Each independently represents an integer of 0 to 3. １ Tok １ The sum of is 3 or less. ２ Tok ２ is 3 or less. n represents an integer of 1 or 2. However, the structural unit represented by formula (C1-1-1) and the structural unit represented by formula (C1-1-2) each independently have at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring.) [6] The stripping composition for stripping by light irradiation according to [4], wherein the novolac resin contains a structural unit represented by formula (C1-3-1) below as the structural unit represented by formula (C1-3): (In formula (C1-3-1), R ８０１ represents a substituent substituted on the ring, and each independently represents a halogen atom, a nitro group, a cyano group, an amino group, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. ８０２ represents a hydrogen atom, an optionally substituted aryl group, or an optionally substituted heteroaryl group. ８０３ represents a hydrogen atom, an optionally substituted alkyl group, an optionally substituted aryl group, or an optionally substituted heteroaryl group. ８０２ and R ８０３ may be bonded to each other to form a divalent group. ８０１ represents a benzene ring, a naphthalene ring, or a biphenyl structure. １１ represents a hydroxy group or a carboxy group. １ represents a single bond or a group having a structure derived from styrene. １１ Each of k independently represents an integer of 0 to 4. １１Each independently represents an integer of 0 to 4. ８０１ When is a benzene ring, h １１ Tok １１ The sum of Ar is 4 or less, ８０１ When is a naphthalene ring, h １１ Tok １１ The sum of Ar is 6 or less, ８０１ When is a biphenyl structure, h １１ Tok １１and the sum of the above is 8 or less, provided that the structural unit represented by formula (C1-3-1) has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring.) [7] A laminate comprising a light-transmitting support substrate, a release agent layer for light-peelable resin, a metal layer, and a wiring layer laminated in this order, wherein the release agent layer for light-peelable resin is a release agent layer formed from the release agent composition for light-peelable resin according to [1]. [8] A laminate comprising a light-transmitting support substrate, a release agent layer for light-peelable resin, an adhesive layer, and a semiconductor substrate or an electronic device substrate laminated in this order, wherein the release agent layer for light-peelable resin is a release agent layer formed from the release agent composition for light-peelable resin according to [2]. [9] A method for manufacturing a fan-out type semiconductor package, comprising the steps of: irradiating a laminate according to [7], in which a plurality of semiconductor chips are mounted on the wiring layer and a sealing layer for sealing the semiconductor chips is formed on the wiring layer, with light from the support substrate side to separate the wiring layer from the support substrate; removing the metal layer on the wiring layer to obtain a sealing structure having the semiconductor chips, the wiring layer, and the sealing layer; and dividing the sealing structure to obtain individual semiconductor packages.

[10] The method for manufacturing a fan-out type semiconductor package according to [9], in which the laminate in which the sealing layer is formed on the wiring layer is obtained through the steps of forming a release agent layer for light irradiation peeling on a light-transmitting support substrate, forming a metal layer on the release agent layer for light irradiation peeling, forming a wiring layer on the metal layer, mounting a plurality of semiconductor chips on the wiring layer, and forming a sealing layer for sealing the semiconductor chips on the wiring layer.

[11] A method for producing a processed semiconductor substrate or electronic device substrate, comprising: a processing step of processing the semiconductor substrate or the electronic device substrate of the laminate described in [8]; and a separation step of separating the semiconductor substrate or the electronic device substrate processed by the processing step from the support substrate.

[12] The method for producing a processed semiconductor substrate or electronic device substrate described in

[11] , wherein the separation step includes a step of irradiating the laminate with light from the support substrate side.

[0010] According to the present invention, there is provided a release agent composition for light-based peeling that can form a release agent layer with improved adhesion to a support substrate in a laminate having, in this order, a support substrate, a release agent layer, a metal layer, and a wiring layer to produce a fan-out type semiconductor package. It is also possible to provide a laminate and a method for producing a fan-out type semiconductor package using the release agent composition for light-based peeling. It is also possible to provide a release agent composition for light-based peeling that can form a release agent layer with improved adhesion to a support substrate in a laminate having, in this order, a support substrate, a release agent layer, an adhesive layer, and a semiconductor substrate or electronic device substrate to produce a processed semiconductor substrate or electronic device substrate. It is also possible to provide a laminate and a method for producing a processed semiconductor substrate or electronic device substrate using the release agent composition for light-based peeling.

[0011] FIG. 1A is a schematic cross-sectional view (part 1) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 1B is a schematic cross-sectional view (part 2) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 1C is a schematic cross-sectional view (part 3) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 1D is a schematic cross-sectional view (part 4) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 1E is a schematic cross-sectional view (part 5) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 1F is a schematic cross-sectional view (part 6) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 1G is a schematic cross-sectional view (part 7) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 1H is a schematic cross-sectional view (part 8) illustrating a manufacturing method for the laminate of the first embodiment A. FIG. 2A is a schematic cross-sectional view (part 1) illustrating a manufacturing method for the laminate of the second embodiment B-1. FIG. 2B is a schematic cross-sectional view (part 2) illustrating a manufacturing method for the laminate of the second embodiment B-1. FIG. 2C is a schematic cross-sectional view (part 3) for explaining a manufacturing method for the laminate of the second embodiment B-1. FIG. 2D is a schematic cross-sectional view (part 4) for explaining a manufacturing method for the laminate of the second embodiment B-1. FIG. 2E is a schematic cross-sectional view (part 5) for explaining a manufacturing method for the laminate of the second embodiment B-1. FIG. 2F is a schematic cross-sectional view (part 6) for explaining a manufacturing method for the laminate of the second embodiment B-1. FIG. 2G is a schematic cross-sectional view (part 7) for explaining a manufacturing method for the laminate of the second embodiment B-1. FIG. 3A is a schematic cross-sectional view (part 1) for explaining a manufacturing method for the laminate of the second embodiment B-2. FIG. 3B is a schematic cross-sectional view (part 2) for explaining a manufacturing method for the laminate of the second embodiment B-2. FIG. 3C is a schematic cross-sectional view (part 3) for explaining a manufacturing method for the laminate of the second embodiment B-2. FIG. 3D is a schematic cross-sectional view (part 4) for explaining a manufacturing method for the laminate of the second embodiment B-2.Figure 3E is a schematic cross-sectional view (part 5) for explaining a manufacturing method for the laminate of the second embodiment B-2. Figure 3F is a schematic cross-sectional view (part 6) for explaining a manufacturing method for the laminate of the second embodiment B-2. Figure 3G is a schematic cross-sectional view (part 7) for explaining a manufacturing method for the laminate of the second embodiment B-2. Figure 3H is a schematic cross-sectional view (part 8) for explaining a manufacturing method for the laminate of the second embodiment B-2.

[0012] (Removal agent composition for photoremoval) The release agent composition for photoremoval of the present invention (hereinafter, the "release agent composition for photoremoval" may be referred to as the "release agent composition") contains a resin having at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring, an epoxy-based crosslinking agent, and a solvent. In this specification, a resin having at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring is also referred to as resin X. A more preferred embodiment of resin X is, for example, a novolac resin. The release agent composition for photoremoval of the present invention, which contains this specific resin X, an epoxy-based crosslinking agent, and a solvent, is referred to as the "release agent composition for photoremoval of first embodiment A." The release agent composition for photoremoval of first embodiment A is used to form a release agent layer in the laminate of first embodiment A described below, in order to produce a fan-out type semiconductor package. -Laminate of First Embodiment A- The laminate of First Embodiment A is a laminate comprising a light-transmitting support substrate, a release agent layer for peeling by light irradiation, a metal layer, and a wiring layer (also referred to as a redistribution layer (RDL)) laminated in this order. When the release agent layer in the laminate of First Embodiment A is formed using the release agent composition for peeling by light irradiation of First Embodiment A, the support substrate and the release agent layer in the laminate of First Embodiment A can be firmly adhered to each other.

[0013] Furthermore, among the release agent compositions for peeling by light irradiation of the present invention, the following release agent composition for peeling by light irradiation, in which an epoxy-based crosslinking agent is specified, can be particularly exemplified as the "release agent composition for peeling by light irradiation of Second Embodiment B." - Release agent composition for peeling by light irradiation of Second Embodiment B - The release agent composition for peeling by light irradiation of Second Embodiment B is a composition containing a resin having at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring, an epoxy-based crosslinker that does not contain a siloxane skeleton, and a solvent. The release agent composition for peeling by light irradiation of Second Embodiment B can improve the adhesion performance between the support substrate and the release agent layer, and therefore can be applied not only to the production of fan-out type semiconductor packages but also to the production of processed semiconductor substrates or electronic device substrates, and can be used to form the release agent layer in the laminate of Second Embodiment B described below. -Laminate of Second Embodiment B- The laminate of Second Embodiment B is a laminate comprising a light-transmitting support substrate, a release agent layer for peeling by light irradiation, an adhesive layer, and a semiconductor substrate or an electronic device substrate laminated in this order. When the release agent layer in the laminate of Second Embodiment B is formed using the release agent composition for peeling by light irradiation of Second Embodiment B, the support substrate and the release agent layer in the laminate of Second Embodiment B can be firmly adhered to each other.

[0014] The release agent composition for photoirradiation peeling of the first embodiment A and the release agent composition for photoirradiation peeling of the second embodiment B will be described in order below. The laminate of the first embodiment A and the laminate of the second embodiment B will also be described, but the laminate will be described after the composition. First, each of the components of the release agent composition for photoirradiation peeling of the first embodiment A will be described below.

[0015] (Removal agent composition for light irradiation peeling of first embodiment A) <Resin X having at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring> The resin X may have a functional group (phenolic hydroxy group or carboxy group) that reacts with the epoxy group in the epoxy-based crosslinking agent, and examples thereof include novolac resins, acrylic resins, polyether ether ketone resins, polyimide resins, etc. that have such functional groups. Among these, a preferred embodiment of the resin X is a novolac resin.

[0016] <<Novolac Resin>> A novolac resin has at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring.

[0017] Novolac resins are resins obtained by, for example, condensation reaction of at least one of a phenolic compound, a carbazole compound, and an aromatic amine compound with at least one of an aldehyde compound, a ketone compound, and a divinyl compound, and optionally with a styrene compound, in the presence of an acid catalyst.

[0018] Examples of phenolic compounds include phenols, naphthols, anthrols, and hydroxypyrenes. Examples of phenols include phenol, cresol, xylenol, resorcinol, bisphenol A, p-tert-butylphenol, p-octylphenol, 9,9-bis(4-hydroxyphenyl)fluorene, and 1,1,2,2-tetrakis(4-hydroxyphenyl)ethane. Examples of naphthols include 1-naphthol, 2-naphthol, 1,5-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, and 9,9-bis(6-hydroxynaphthyl)fluorene. Examples of anthrols include 9-anthrole. Examples of hydroxypyrenes include 1-hydroxypyrene and 2-hydroxypyrene. Examples of the carbazole compound include carbazole, 1,3,6,8-tetranitrocarbazole, 3,6-diaminocarbazole, 3,6-dibromo-9-ethylcarbazole, 3,6-dibromo-9-phenylcarbazole, 3,6-dibromocarbazole, 3,6-dichlorocarbazole, 3-amino-9-ethylcarbazole, 3-bromo-9-ethylcarbazole, 4,4'-bis(9H-carbazol-9-yl)biphenyl, 4-glycidylcarbazole, 4-hydroxycarbazole, 9-(1H-benzotriazol-1-yl)methylcarbazole, 4 ... Examples of aromatic amine compounds include diphenylamine and N-phenyl-1-naphthylamine. These compounds may be used alone or in combination of two or more. These compounds may have a substituent.For example, they may have a substituent on the aromatic ring.

[0019] Examples of aldehyde compounds include saturated aliphatic aldehydes, unsaturated aliphatic aldehydes, heterocyclic aldehydes, aromatic aldehydes, etc. Examples of saturated aliphatic aldehydes include formaldehyde, paraformaldehyde, acetaldehyde, propylaldehyde, butyraldehyde, isobutyraldehyde, valeraldehyde, capronaldehyde, 2-methylbutyraldehyde, hexylaldehyde, undecanoic aldehyde, 7-methoxy-3,7-dimethyloctyl aldehyde, cyclohexane aldehyde, 3-methyl-2-butyraldehyde, 2-ethylhexyl aldehyde, glyoxal, malonaldehyde, succinaldehyde, glutaraldehyde, adipic aldehyde, etc. Examples of unsaturated aliphatic aldehydes include acrolein and methacrolein. Examples of heterocyclic aldehydes include furfural and pyridine aldehyde. Examples of aromatic aldehydes include benzaldehyde, naphthyl aldehyde, anthryl aldehyde, phenanthryl aldehyde, salicyl aldehyde, phenylacetaldehyde, 3-phenylpropionaldehyde, tolyl aldehyde, (N,N-dimethylamino)benzaldehyde, and acetoxybenzaldehyde. Among these, saturated aliphatic aldehydes and aromatic aldehydes are preferred. Examples of ketone compounds include diaryl ketone compounds. Examples of diaryl ketone compounds include diphenyl ketone, phenyl naphthyl ketone, dinaphthyl ketone, phenyl tolyl ketone, and ditolyl ketone. Examples of divinyl compounds include divinylbenzene, dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene, 5-vinylnorborna-2-ene, divinylpyrene, limonene, 5-vinylnorbornadiene, etc. These can be used alone or in combination of two or more.

[0020] The styrene compound is not particularly limited as long as it is a compound having a styrene structure, and examples thereof include styrene, α-methylstyrene, hydroxystyrene (vinylphenol), carboxystyrene (vinylbenzoic acid), alkylstyrene, tertiary-butoxystyrene, etc. These can be used alone or in combination of two or more.

[0021] The novolac resin is, for example, a novolac resin that absorbs light and changes in quality, for example, by photodecomposition.

[0022] The novolac resin contains, for example, at least one structural unit represented by the following formula (C1-1), the following structural unit represented by the following formula (C1-2), and the following structural unit represented by the following formula (C1-3). For example, the novolac resin may contain at least one structural unit represented by the following formula (C1-1), the following structural unit represented by the following formula (C1-2), and the following structural unit represented by the following formula (C1-3).

[0023]

[0024] In the formula, C １ represents a group derived from an aromatic compound containing a nitrogen atom. ２ represents a group containing a tertiary or quaternary carbon atom and having at least one member selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring in a side chain, or represents a methylene group. ３ represents a group derived from an aliphatic polycyclic compound. ４ represents a group derived from phenol, a group derived from bisphenol, a group derived from naphthol, a group derived from biphenyl, or a group derived from biphenol. ５ represents a single bond or a group having a structure derived from styrene. １ , C ２ and C ５ At least one of the following has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring. １ , C ３and C ５ At least one of the following has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring. ２ , C ４ and C ５ At least one of the above has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring.

[0025] That is, the novolac resin contains, for example, one or more of the following structural units: A structural unit having a bond between a group derived from a nitrogen atom-containing aromatic compound, and a group containing a tertiary or quaternary carbon atom or a methylene group having at least one kind selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring in its side chain, and optionally a group having a structure derived from styrene (formula (C1-1)); A structural unit having a bond between a group derived from a nitrogen atom-containing aromatic compound, a group derived from an aliphatic polycyclic compound, and optionally a group having a structure derived from styrene (formula (C1-2)); A structural unit having a bond between a group derived from a phenol, a group derived from bisphenol, a group derived from naphthol, a group derived from biphenyl, or a group derived from biphenol, and a group containing a tertiary or quaternary carbon atom or a methylene group having at least one kind selected from the group consisting of a quaternary carbon atom and an aromatic ring in its side chain, and optionally a group having a structure derived from styrene (formula (C1-3)).

[0026] C １ Examples of the group derived from an aromatic compound containing a nitrogen atom include, but are not limited to, a group derived from carbazole, a group derived from N-phenyl-1-naphthylamine, a group derived from N-phenyl-2-naphthylamine, and a group derived from N,N'-diphenyl-1,4-phenylenediamine. ２The group containing a tertiary or quaternary carbon atom or a methylene group having at least one selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring in a side chain thereof may be, for example, a group derived from 1-naphthaldehyde, a group derived from 1-pyrenecarboxaldehyde, a group derived from 4-(trifluoromethyl)benzaldehyde, a group derived from 2-ethylhexylaldehyde, a group derived from acetaldehyde, or the like, but is not limited to these. ３ The group derived from an aliphatic polycyclic compound of can be, but is not limited to, a group derived from dicyclopentadiene. ４ is a group derived from phenol, a group derived from bisphenol, a group derived from naphthol, a group derived from biphenyl, or a group derived from biphenol. ５ is a single bond or a group having a structure derived from styrene.

[0027] C ５ is a group having a structure derived from styrene, C ５ may have at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring.

[0028] In a preferred embodiment, the novolak resin contains, as the structural unit represented by formula (C1-1), for example, a structural unit represented by the following formula (C1-1-1).

[0029]

[0030] In formula (C1-1-1), R ９０１ and R ９０２ represents a substituent substituted on the ring, and each independently represents a halogen atom, a nitro group, a cyano group, an amino group, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. ９０３ represents a hydrogen atom, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. ９０４ represents a hydrogen atom, an optionally substituted aryl group, or an optionally substituted heteroaryl group.９０５ represents an optionally substituted alkyl group, an optionally substituted aryl group, or an optionally substituted heteroaryl group. ９０４ and R ９０５ The groups X may be bonded to each other to form a divalent group. Examples of the substituents on the alkyl group and alkenyl group include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxy group, an aryl group, and a heteroaryl group. Examples of the substituents on the aryl group and the heteroaryl group include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxy group, an alkyl group, and an alkenyl group. １ and X ２ each independently represents a hydroxy group or a carboxy group. １ represents a single bond or a group having a structure derived from styrene. １ and h ２ Each of k independently represents an integer of 0 to 3. １ and k ２ Each independently represents an integer of 0 to 3. １ Tok １ The sum of is 3 or less. ２ Tok ２ is not more than 3. However, the structural unit represented by formula (C1-1-1) has at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring.

[0031] For example, in formula (C1-1-1), R ９０４ , R ９０５ and Z １ When at least one of has a hydroxy group or a carboxy group, k １ and k ２ may be 0. For example, in formula (C1-1-1), R ９０４ and R ９０５ is an aryl group having a hydroxy group or a carboxy group, or Z １ has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring, k１ and k ２ may be 0. For example, in formula (C1-1-1), k １ and k ２ If is 0, R ９０４ , R ９０５ and Z １ It is preferable that at least one of the groups has a hydroxy group or a carboxy group. １ and k ２ If is 0, R ９０４ and R ９０５ At least one of Z is an aryl group having a hydroxy group or a carboxy group, or Z １ has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring.

[0032] In this specification, the number of carbon atoms in an optionally substituted alkyl group and an optionally substituted alkenyl group is usually 40 or less, and from the viewpoint of solubility, preferably 30 or less, more preferably 20 or less. In this specification, the number of carbon atoms in an optionally substituted aryl group and heteroaryl group is usually 40 or less, and from the viewpoint of solubility, preferably 30 or less, more preferably 20 or less.

[0033] In this specification, examples of halogen atoms include fluorine atoms, chlorine atoms, bromine atoms, and iodine atoms.

[0034] Herein, examples of substituents for optionally substituted alkyl groups include halogen atoms, alkoxy groups, and halogenated alkoxy groups. Herein, examples of substituents for optionally substituted alkenyl groups include halogen atoms, alkoxy groups, and halogenated alkoxy groups. Herein, examples of substituents for optionally substituted aryl groups include halogen atoms, hydroxy groups, carboxy groups, cyano groups, alkyl groups, halogenated alkyl groups, alkoxy groups, and halogenated alkoxy groups. Herein, examples of substituents for optionally substituted heteroaryl groups include halogen atoms, hydroxy groups, carboxy groups, cyano groups, alkyl groups, halogenated alkyl groups, alkoxy groups, and halogenated alkoxy groups.

[0035] Specific examples of the optionally substituted alkyl group include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, an s-butyl group, a t-butyl group, an n-pentyl group, a 1-methyl-n-butyl group, a 2-methyl-n-butyl group, a 3-methyl-n-butyl group, a 1,1-dimethyl-n-propyl group, a 1,2-dimethyl-n-propyl group, a 2,2-dimethyl-n-propyl group, a 1-ethyl-n-propyl group, an n-hexyl group, a 1-methyl-n-pentyl group, a 2-methyl-n-pentyl group, a 3-methyl-n-pentyl group, a 4-methyl-n-pentyl group, a 5-methyl-n-pentyl group, a 6-methyl-n-pentyl group, a 7-methyl-n-pentyl group, a 8-methyl-n-pentyl group, a 9-methyl-n-pentyl group, a 10-methyl-n-pentyl group, a 11-methyl-n-butyl group, a 12-methyl-n-butyl group, a 13-methyl-n-butyl group, a 14-methyl-n-butyl group, a 15-methyl-n-butyl group, a 16-methyl-n-butyl group, a 17-methyl-n-butyl group, a 18-methyl-n-butyl group, a 19-methyl-n-butyl group, a 20-methyl-n-butyl group, a 21-methyl-n-butyl group, a 22-methyl-n-butyl group, a 23-methyl-n-butyl group, a 24-methyl-n-butyl group, a 25-methyl-n-butyl group, a 26-methyl-n-butyl group, a 27-methyl-n-butyl group, a 28-methyl-n-butyl group, a 29-methyl-n-butyl group, a 21-methyl Examples of ethylhexyl groups include, but are not limited to, 1,1-dimethyl-n-pentyl group, 1,2-dimethyl-n-butyl group, 1,3-dimethyl-n-butyl group, 2,2-dimethyl-n-butyl group, 2,3-dimethyl-n-butyl group, 3,3-dimethyl-n-butyl group, 1-ethyl-n-butyl group, 2-ethyl-n-butyl group, 1,1,2-trimethyl-n-propyl group, 1,2,2-trimethyl-n-propyl group, 1-ethyl-1-methyl-n-propyl group, 1-ethyl-2-methyl-n-propyl group, and 2-ethylhexyl group.

[0036] Specific examples of the optionally substituted alkenyl group include ethenyl, 1-propenyl, 2-propenyl, 1-methyl-1-ethenyl, 1-butenyl, 2-butenyl, 3-butenyl, 2-methyl-1-propenyl, 2-methyl-2-propenyl, 1-ethylethenyl, 1-methyl-1-propenyl, 1-methyl-2-propenyl, 1-pentenyl, 2-pentenyl, 3-pentenyl, 4-pentenyl, 1-n-propylethenyl, 1-methyl-1-butenyl, 1-methyl-2-butenyl, and 1-methyl-3-butenyl. nyl group, 2-ethyl-2-propenyl group, 2-methyl-1-butenyl group, 2-methyl-2-butenyl group, 2-methyl-3-butenyl group, 3-methyl-1-butenyl group, 3-methyl-2-butenyl group, 3-methyl-3-butenyl group, 1,1-dimethyl-2-propenyl group, 1-i-propylethenyl group, 1,2-dimethyl-1-propenyl group, 1,2-dimethyl-2-propenyl group, 1-cyclopentenyl group, 2-cyclopentenyl group, 3-cyclopentenyl group, 1-hexenyl group, 2-hexenyl group, 3-hexenyl group, 4-hexenyl group, 5-hexenyl group xenyl group, 1-methyl-1-pentenyl group, 1-methyl-2-pentenyl group, 1-methyl-3-pentenyl group, 1-methyl-4-pentenyl group, 1-n-butylethenyl group, 2-methyl-1-pentenyl group, 2-methyl-2-pentenyl group, 2-methyl-3-pentenyl group, 2-methyl-4-pentenyl group, 2-n-propyl-2-propenyl group, 3-methyl-1-pentenyl group, 3-methyl-2-pentenyl group, 3-methyl-3-pentenyl group, 3-methyl-4-pentenyl group, 3-ethyl-3-butenyl group, 4-methyl-1-pentenyl group, 4-methyl-2-pentenyl group, 4-methyl-3-pentenyl group, 4-methyl-4-pentenyl group, 1,1-dimethyl-2-butenyl group, 1,1-dimethyl-3-butenyl group, 1,2-dimethyl-1-butenyl group, 1,2-dimethyl-2-butenyl group, 1,2-dimethyl-3-butenyl group, 1-methyl-2-ethyl-2-propenyl group, 1-s-butylethenyl group, 1,3-dimethyl-1-butenyl group, 1,3-dimethyl-2-butenyl group, 1,3-dimethyl-3-butenyl group, 1-i-butylethenyl group, 2,2-dimethyl-3-butenyl group,3-dimethyl-1-butenyl group, 2,3-dimethyl-2-butenyl group, 2,3-dimethyl-3-butenyl group, 2-i-propyl-2-propenyl group, 3,3-dimethyl-1-butenyl group, 1-ethyl-1-butenyl group, 1-ethyl-2-butenyl group, 1-ethyl-3-butenyl group, 1-n-propyl-1-propenyl group, 1-n-propyl-2-propenyl group, 2-ethyl-1-butenyl group, 2-ethyl-2-butenyl group, 2-ethyl-3-butenyl group, 1,1,2-trimethyl-2-propenyl group, 1-tert-butylethenyl group, 1-methyl-1-ethyl-2-propenyl group, 1-ethyl-2-methyl-1-propenyl group, 1-ethyl-2-methyl-2-propenyl group, 1-i-propyl-1-propenyl group , 1-i-propyl-2-propenyl group, 1-methyl-2-cyclopentenyl group, 1-methyl-3-cyclopentenyl group, 2-methyl-1-cyclopentenyl group, 2-methyl-2-cyclopentenyl group, 2-methyl-3-cyclopentenyl group, 2-methyl-4-cyclopentenyl group, 2-methyl-5-cyclopentenyl group, 2-methylene-cyclopentyl group, 3-methyl-1-cyclopentenyl group, 3-methyl-2-cyclopentenyl group, 3-methyl-3-cyclopentenyl group, 3-methyl-4-cyclopentenyl group, 3-methyl-5-cyclopentenyl group, 3-methylene-cyclopentyl group, 1-cyclohexenyl group, 2-cyclohexenyl group, 3-cyclohexenyl group, and the like.

[0037] Specific examples of the optionally substituted aryl group include, but are not limited to, a phenyl group, a 2-methylphenyl group, a 3-methylphenyl group, a 4-methylphenyl group, a 2-chlorophenyl group, a 3-chlorophenyl group, a 4-chlorophenyl group, a 2-fluorophenyl group, a 3-fluorophenyl group, a 4-fluorophenyl group, a 4-methoxyphenyl group, a 4-ethoxyphenyl group, a 4-nitrophenyl group, a 4-cyanophenyl group, a 2-hydroxyphenyl group, a 3-hydroxyphenyl group, a 4-hydroxyphenyl group, a 2-carboxyphenyl group, a 3-carboxyphenyl group, a 4-carboxyphenyl group, a 4-amyloxyphenyl group, a 1-naphthyl group, a 2-naphthyl group, a biphenyl-4-yl group, a biphenyl-3-yl group, a biphenyl-2-yl group, a 1-anthryl group, a 2-anthryl group, a 9-anthryl group, a 1-phenanthryl group, a 2-phenanthryl group, a 3-phenanthryl group, a 4-phenanthryl group, and a 9-phenanthryl group.

[0038] Specific examples of the optionally substituted heteroaryl group include, but are not limited to, a 2-thienyl group, a 3-thienyl group, a 2-furanyl group, a 3-furanyl group, a 2-oxazolyl group, a 4-oxazolyl group, a 5-oxazolyl group, a 3-isoxazolyl group, a 4-isoxazolyl group, a 5-isoxazolyl group, a 2-thiazolyl group, a 4-thiazolyl group, a 5-thiazolyl group, a 3-isothiazolyl group, a 4-isothiazolyl group, a 5-isothiazolyl group, and the like.

[0039] Z １ Examples of the group include a group represented by the following formula (Z). In formula (Z), R ９１０ represents a halogen atom, a nitro group, a cyano group, an amino group, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. ９１１ represents a hydrogen atom or a methyl group. １０ represents a hydroxy group or a carboxy group. １０ and k １０ Each independently represents an integer of 0 to 3. １０ Tok １０The sum of is 5 or less. * represents a bond.

[0040] R ９１０ Specific examples of ９０１ and R ９０２ Examples include the specific examples given in the explanation of .

[0041] Specific examples of the structural unit represented by formula (C1-1-1) include, but are not limited to, the following: The substitution positions of the hydroxyl group and carboxyl group on the aromatic ring are also not limited.

[0042]

[0043] In a preferred embodiment, the novolak resin contains, as the structural unit represented by formula (C1-1), for example, a structural unit represented by the following formula (C1-1-2).

[0044]

[0045] In formula (C1-1-2), Ar ９０１ and Ar ９０２ each independently represents an aromatic ring; R ９０１ ~R ９０５ , X １ and X ２ , Z １ , h １ and h ２ , and k １ and k ２ has the same meaning as above. １ Tok １ The sum of is 3 or less. ２ Tok ２ is 3 or less. n is an integer of 1 or 2. However, the structural unit represented by formula (C1-1-2) has at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring. Examples of aromatic rings include a benzene ring and a naphthalene ring.

[0046] For example, in formula (C1-1-2), R ９０４ , R ９０５ and Z １ When at least one of has a hydroxy group or a carboxy group, k １and k ２ may be 0. For example, in formula (C1-1-2), R ９０４ and R ９０５ is an aryl group having a hydroxy group or a carboxy group, or Z １ has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring, k １ and k ２ may be 0. For example, in formula (C1-1-2), k １ and k ２ If is 0, R ９０４ , R ９０５ and Z １ It is preferable that at least one of the groups has a hydroxy group or a carboxy group. １ and k ２ If is 0, R ９０４ and R ９０５ At least one of Z is an aryl group having a hydroxy group or a carboxy group, or Z １ has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring.

[0047] Specific examples of the structural unit represented by formula (C1-1-2) include, but are not limited to, the following: The substitution positions of the hydroxyl group and carboxyl group on the aromatic ring are also not limited.

[0048]

[0049] In a preferred embodiment, the novolak resin contains, as the structural unit represented by formula (C1-2), for example, a structural unit represented by the following formula (C1-2-1) or (C1-2-2).

[0050]

[0051] In the above formula, R ９０６ ~R ９０９are substituents bonded to the ring, each independently representing a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxy group, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group, and specific examples and preferred numbers of carbon atoms of the halogen atom, the optionally substituted alkyl group, the optionally substituted alkenyl group, and the optionally substituted aryl group are the same as those described above, and h ３ ~h ６ R each independently represents an integer of 0 to 3. ９０１ ~R ９０５ , X １ and X ２ , Z １ , h １ and h ２ , and k １ and k ２ has the same meaning as above. １ Tok １ The sum of is 3 or less. ２ Tok ２ is not more than 3. However, the structural unit represented by formula (C1-2-1) and the structural unit represented by formula (C1-2-2) each independently have at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring.

[0052] Specific examples of structural units represented by formulae (C1-2-1) and (C1-2-2) are listed below, but are not limited to these. The substitution positions of the hydroxyl group and carboxyl group on the aromatic ring are also not limited.

[0053]

[0054] In a preferred embodiment, the novolak resin contains, as the structural unit represented by formula (C1-3), for example, a structural unit represented by formula (C1-3-1) below. In formula (C1-3-1), R ８０１ represents a substituent substituted on the ring, and each independently represents a halogen atom, a nitro group, a cyano group, an amino group, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group.８０２ represents a hydrogen atom, an optionally substituted aryl group, or an optionally substituted heteroaryl group. ８０３ represents a hydrogen atom, an optionally substituted alkyl group, an optionally substituted aryl group, or an optionally substituted heteroaryl group. ８０２ and R ８０３ The groups may be bonded to each other to form a divalent group. Examples of the substituents on the aryl group and heteroaryl group include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxy group, an alkyl group, and an alkenyl group. ８０１ represents a benzene ring, a naphthalene ring, or a biphenyl structure. １１ represents a hydroxy group or a carboxy group. １ represents a single bond or a group having a structure derived from styrene. １１ Each of k independently represents an integer of 0 to 4. １１ Each independently represents an integer of 0 to 4. ８０１ When is a benzene ring, h １１ Tok １１ The sum of Ar is 4 or less, ８０１ When is a naphthalene ring, h １１ Tok １１ The sum of Ar is 6 or less, ８０１ When is a biphenyl structure, h １１ Tok １１ is equal to or less than 8. However, the structural unit represented by formula (C1-3-1) has at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring.

[0055] For example, in formula (C1-3-1), R ８０２ , R ８０３ and Z １ When at least one of has a hydroxy group or a carboxy group, k １１ may be 0. For example, in formula (C1-3-1), R ８０２ and R ８０３ is an aryl group having a hydroxy group or a carboxy group, or Z１ has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring, k １１ may be 0. For example, in formula (C1-3-1), k １１ If is 0, R ８０２ and R ８０３ At least one of the groups is an aryl group having a hydroxy group or a carboxy group, or a heteroaryl group having a hydroxy group or a carboxy group.

[0056] Specific examples of the structural unit represented by formula (C1-3) are listed below, but the present invention is not limited to these.

[0057]

[0058] As described above, novolac resins are resins obtained by, for example, a condensation reaction of at least one of a phenolic compound, a carbazole compound, and an aromatic amine compound with at least one of an aldehyde compound, a ketone compound, and a divinyl compound, and optionally a styrene compound, under an acid catalyst. In this condensation reaction, for example, 0.1 to 10 equivalents of the aldehyde compound or ketone compound are typically used per equivalent of the benzene ring constituting the ring of the carbazole compound. When using a styrene compound to introduce at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring into a novolac resin, the styrene compound used as a reaction raw material may have a protecting group. An example of a styrene compound having a protecting group is tertiary-butoxystyrene.

[0059] In the condensation reaction, an acid catalyst is usually used. Examples of the acid catalyst include, but are not limited to, mineral acids such as sulfuric acid, phosphoric acid, and perchloric acid; organic sulfonic acids such as p-toluenesulfonic acid and p-toluenesulfonic acid monohydrate; and carboxylic acids such as formic acid and oxalic acid. The amount of the acid catalyst cannot be generally specified because it is determined appropriately depending on the type of acid used, etc., but is usually determined appropriately in the range of 0.001 to 10,000 parts by mass per 100 parts by mass of the carbazole compound.

[0060] The condensation reaction can be carried out without a solvent if either the raw material compounds or the acid catalyst used are liquid, but is usually carried out using a solvent. The solvent is not particularly limited as long as it does not inhibit the reaction, but typically includes ether compounds, ether ester compounds, and the like. Examples of ether compounds include cyclic ether compounds such as tetrahydrofuran and dioxane. Examples of ether ester compounds include methyl cellosolve acetate, ethyl cellosolve acetate, butyl cellosolve acetate, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monomethyl ether propionate, propylene glycol monoethyl ether propionate, and propylene glycol monopropyl ether propionate.

[0061] The reaction temperature is usually appropriately set within the range of 40° C. to 200° C. The reaction time cannot be generally defined since it varies depending on the reaction temperature, but is usually appropriately set within the range of 30 minutes to 50 hours.

[0062] After the reaction is completed, if necessary, purification and isolation are carried out according to a standard method, and the obtained novolak resin is used for preparing a release agent composition. A person skilled in the art can determine the production conditions of the novolak resin without undue burden based on the above explanation and technical common sense, and therefore can produce the novolak resin.

[0063] The weight-average molecular weight of the novolak resin is usually 500 to 200,000, and from the viewpoint of ensuring solubility in a solvent, etc., it is preferably 100,000 or less, more preferably 50,000 or less, even more preferably 10,000 or less, still more preferably 5,000 or less, and still more preferably 3,000 or less; and from the viewpoint of improving the strength of the film, etc., it is preferably 600 or more, more preferably 700 or more, even more preferably 800 or more, still more preferably 900 or more, and still more preferably 1,000 or more. In the present invention, the weight-average molecular weight, number-average molecular weight, and dispersity of the novolak resin can be measured, for example, using a GPC apparatus (EcoSEC, HLC-8320GPC, manufactured by Tosoh Corporation) and a GPC column (TSKgel SuperMultiporeHZ-N, TSKgel SuperMultiporeHZ-H, manufactured by Tosoh Corporation), at a column temperature of 40°C, using tetrahydrofuran as an eluent (elution solvent), at a flow rate (flow rate) of 0.35 mL / min, and using polystyrene (manufactured by Sigma-Aldrich) as a standard sample.

[0064] The content of resin X (more specifically, for example, novolac resin) in the release agent composition is not particularly limited, but is preferably 50% by mass to 100% by mass, more preferably 60% by mass to 99% by mass, and particularly preferably 70% by mass to 95% by mass, based on the film-constituting components of the release agent composition. In the present invention, the film-constituting components refer to components other than the solvent contained in the composition.

[0065] <Epoxy-based crosslinking agent> The epoxy-based crosslinking agent has an epoxy group represented by the following formula (A-1) or formula (A-2): The epoxy-based crosslinking agent may be linear or cyclic.

[0066] (In formula (A-1) and formula (A-2), * represents a bond.)

[0067] Examples of epoxy-based crosslinking agents include compounds having the following structural units or compounds having the following structures: (In the formula, a, b, c, and d each independently represent an integer of 0 to 30.)

[0068] The epoxy crosslinking agent is not particularly limited as long as it is a compound having an epoxy group, but for example, a compound having at least two epoxy groups is preferred. Examples include tris(2,3-epoxypropyl)isocyanurate, 1,4-butanediol diglycidyl ether, 1,2-epoxy-4-(epoxyethyl)cyclohexane, glycerol triglycidyl ether, diethylene glycol diglycidyl ether, 2,6-diglycidylphenyl glycidyl ether, 1,1,3-tris[p-(2,3-epoxypropoxy)phenyl]propane, 1,2-cyclohexanedicarboxylic acid diglycidyl ester, 4,4'-methylenebis(N,N-diglycidylaniline), 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, trimethylolethane triglycidyl ether, bisphenol-A diglycidyl ether, and pentaerythritol polyglycidyl ether. Furthermore, a polymer having an epoxy group can be used as the compound having at least two epoxy groups. Such polymers can be used without particular limitation as long as they have an epoxy group. Such polymers can be produced by addition polymerization using an addition-polymerizable monomer having an epoxy group, or by reacting a polymer compound having a hydroxyl group with a compound having an epoxy group, such as epichlorohydrin or glycidyl tosylate. Examples of such polymers include addition-polymerized polymers such as polyglycidyl methacrylate, a copolymer of glycidyl methacrylate and ethyl methacrylate, a copolymer of glycidyl methacrylate, styrene, and 2-hydroxyethyl methacrylate, and poly(3,4-epoxycyclohexylmethyl methacrylate), as well as condensation-polymerized polymers such as epoxy novolac. The weight-average molecular weight of such polymers is, for example, 300 to 200,000.

[0069] Examples of compounds having at least two epoxy groups include epoxy resins having an amino group, such as YH-434 and YH434L (manufactured by Tohto Kasei Co., Ltd.); epoxy resins having a cyclohexene oxide structure, such as Epolead GT-401, GT-403, GT-301, GT-302, Celloxide 2021, and Celloxide 3000 (manufactured by Daicel Corporation); bisphenol A type epoxy resins, such as JER1001, 1002, 1003, 1004, 1007, 1009, 1010, and 828 (all manufactured by Mitsubishi Chemical Corporation); and bisphenol F type epoxy resins, such as JER8. 07 (manufactured by Mitsubishi Chemical Corporation), etc., phenol novolac epoxy resins such as JER152 and 154 (both manufactured by Mitsubishi Chemical Corporation), EPPN201 and 202 (both manufactured by Nippon Kayaku Co., Ltd.), etc., cresol novolac epoxy resins such as EOCN-102, EOCN-103S, EOCN-104S, EOCN-1020, EOCN-1025 and EOCN-1027 (all manufactured by Nippon Kayaku Co., Ltd.) and JER180S75 (manufactured by Mitsubishi Chemical Corporation), etc., alicyclic epoxy resins such as Denacol EX-252 (manufactured by Nagase Chemtex Corporation), CY175, CY177 and CY179 (all manufactured by CIBA-GEIGY), etc. A.G.), Araldite CY-182, CY-192, CY-184 (all manufactured by CIBA-GEIGY) Examples of suitable glycerin-based coatings include Epiclon 200, Epiclon 400, and HP-4700 (manufactured by DIC Corporation), JER871 and JER872 (manufactured by Mitsubishi Chemical Corporation), and ED-5661 and ED-5662 (manufactured by Celanese Coatings Co., Ltd.); and aliphatic polyglycidyl ethers such as Denacol EX-611, EX-612, EX-614, EX-622, EX-411, EX-512, EX-522, EX-421, EX-313, EX-314, and EX-321 (manufactured by Nagase Chemtex Corporation).

[0070] The content of the epoxy crosslinking agent in the release agent composition is not particularly limited, but is preferably 0.1% by mass to 70% by mass, and more preferably 1% by mass to 50% by mass, relative to the resin X or the novolac resin in the release agent composition.

[0071] <Curing Catalyst> The release agent composition may contain a curing catalyst for the purpose of accelerating the curing reaction.

[0072] The curing catalyst is not particularly limited, and examples thereof include amines, imidazoles, organic phosphines, Lewis acids, etc. Examples of amines include tertiary amines. Examples of tertiary amines include 1,8-diazabicyclo(5.4.0)undec-7-ene (DBU), triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol. Examples of imidazoles include 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, 4-methyl-2-phenylimidazole, 2-heptadecylimidazole, and 2-phenyl-1-benzyl-1H-imidazole. Examples of organic phosphines include tributylphosphine, methyldiphenylphosphine, triphenylphosphine, diphenylphosphine, and phenylphosphine. Other curing catalysts include, for example, tetra-substituted phosphonium tetra-substituted borates such as tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium ethyltriphenylborate, and tetrabutylphosphonium tetrabutylborate; tetraphenylboron salts such as 2-ethyl-4-methylimidazole tetraphenylborate and N-methylmorpholine tetraphenylborate; and tetrabutylphosphonium O,O-diethylphosphorodithioate.

[0073] The amount of the curing catalyst contained in the release agent composition is not particularly limited, but is preferably 1% by mass to 20% by mass relative to the epoxy-based crosslinking agent in the release agent composition.

[0074] <Surfactant> The stripping composition may contain a surfactant for the purposes of adjusting the liquid properties of the composition itself and the film properties of the resulting film, and for the purpose of reproducibly preparing a highly uniform stripping composition. Examples of the surfactant include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene oleyl ether, polyoxyethylene alkylaryl ethers such as polyoxyethylene octylphenol ether and polyoxyethylene nonylphenol ether, polyoxyethylene-polyoxypropylene block copolymers, sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, and sorbitan tristearate, polyoxyethylene sorbitan monolaurate, and polyoxyethylene sorbitan monopalmitate. nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters, such as polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, and polyoxyethylene sorbitan tristearate; fluorosurfactants such as Eftop EF301, EF303, and EF352 (trade names, manufactured by Tochem Products Co., Ltd.), Megafac F171, F173, R-30, and R-30N (trade names, manufactured by DIC Corporation), Fluorad FC430 and FC431 (trade names, manufactured by Sumitomo 3M Limited), Asahiguard AG710, Surflon S-382, SC101, SC102, SC103, SC104, SC105, and SC106 (trade names, manufactured by AGC Inc.); and organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.). The surfactants may be used alone or in combination of two or more. The amount of the surfactant in the stripping composition is usually 2% by mass or less based on the film-constituting components of the stripping composition.

[0075] <Solvent> The release agent composition contains a solvent. As the solvent, for example, a high-polarity solvent capable of well dissolving film-constituting components such as the above-mentioned resin X (more specifically, for example, a novolac resin) and an epoxy-based crosslinking agent can be used, and a low-polarity solvent may be used as needed for the purpose of adjusting viscosity, surface tension, etc. In the present invention, a low-polarity solvent is defined as one having a relative dielectric constant of less than 7 at a frequency of 100 kHz, and a high-polarity solvent is defined as one having a relative dielectric constant of 7 or more at a frequency of 100 kHz. The solvents can be used alone or in combination of two or more.

[0076] Examples of highly polar solvents include amide solvents such as N,N-dimethylformamide, N,N-dimethylacetamide, N,N-dimethylisobutyramide, N-methylpyrrolidone, and 1,3-dimethyl-2-imidazolidinone; ketone solvents such as ethyl methyl ketone, isophorone, and cyclohexanone; cyano solvents such as acetonitrile and 3-methoxypropionitrile; polyhydric alcohol solvents such as ethylene glycol, diethylene glycol, triethylene glycol, dipropylene glycol, 1,3-butanediol, and 2,3-butanediol; monohydric alcohol solvents other than aliphatic alcohols such as propylene glycol monomethyl ether, diethylene glycol monomethyl ether, diethylene glycol monophenyl ether, triethylene glycol monomethyl ether, dipropylene glycol monomethyl ether, benzyl alcohol, 2-phenoxyethanol, 2-benzyloxyethanol, 3-phenoxybenzyl alcohol, and tetrahydrofurfuryl alcohol; and sulfoxide solvents such as dimethyl sulfoxide.

[0077] Examples of low-polarity solvents include chlorine-based solvents such as chloroform and chlorobenzene; aromatic hydrocarbon-based solvents such as alkylbenzenes such as toluene, xylene, tetralin, cyclohexylbenzene and decylbenzene; aliphatic alcohol-based solvents such as 1-octanol, 1-nonanol and 1-decanol; ether-based solvents such as tetrahydrofuran, dioxane, anisole, 4-methoxytoluene, 3-phenoxytoluene, dibenzyl ether, diethylene glycol dimethyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether and triethylene glycol butyl methyl ether; and ester-based solvents such as methyl benzoate, ethyl benzoate, butyl benzoate, isoamyl benzoate, bis(2-ethylhexyl) phthalate, dibutyl maleate, dibutyl oxalate, hexyl acetate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate and diethylene glycol monobutyl ether acetate.

[0078] The content of the solvent is appropriately determined taking into consideration the viscosity of the desired composition, the coating method to be used, the thickness of the film to be produced, and the like, but is 99% by mass or less of the total composition, preferably 70 to 99% by mass, and more preferably 85 to 97% by mass, of the total composition. In other words, in this case, the amount of the film-constituting components is preferably 1 to 30% by mass, and more preferably 3 to 15% by mass, of the total composition.

[0079] The viscosity and surface tension of the stripping composition are appropriately adjusted by changing the types of solvents used, their ratios, the concentrations of the film-constituting components, etc., taking into consideration various factors such as the coating method used and the desired film thickness.

[0080] In one embodiment of the present invention, the stripper composition contains a glycol-based solvent from the viewpoint of reproducibly obtaining a highly uniform composition, reproducibly obtaining a composition with high storage stability, reproducibly obtaining a composition that gives a highly uniform film, etc. Note that the term "glycol-based solvent" used here is a general term for glycols, glycol monoethers, glycol diethers, glycol monoesters, glycol diesters, and glycol ester ethers.

[0081] An example of a preferred glycol-based solvent is represented by formula (G).

[0082]

[0083] In formula (G), R Ｇ１ each independently represents a linear or branched alkylene group having 2 to 4 carbon atoms; R Ｇ２ and R Ｇ３ each independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 8 carbon atoms, or an alkylacyl group in which the alkyl moiety is a linear or branched alkyl group having 1 to 8 carbon atoms; n ｇ is an integer from 1 to 6.

[0084] Specific examples of the linear or branched alkylene group having 2 to 4 carbon atoms include, but are not limited to, an ethylene group, a trimethylene group, a 1-methylethylene group, a tetramethylene group, a 2-methylpropane-1,3-diyl group, a pentamethylene group, a hexamethylene group, etc. Among these, from the viewpoint of reproducibly obtaining a highly uniform composition, reproducibly obtaining a composition with high storage stability, and reproducibly obtaining a composition that gives a highly uniform film, linear or branched alkylene groups having 2 to 3 carbon atoms are preferred, and linear or branched alkylene groups having 3 carbon atoms are more preferred.

[0085] Specific examples of the linear or branched alkyl group having 1 to 8 carbon atoms include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, an s-butyl group, a tertiary butyl group, an n-pentyl group, a 1-methyl-n-butyl group, a 2-methyl-n-butyl group, a 3-methyl-n-butyl group, a 1,1-dimethyl-n-propyl group, a 1,2-dimethyl-n-propyl group, a 2,2-dimethyl-n-propyl group, a 1-ethyl-n-propyl group, an n-hexyl group, a 1-methyl-n-pentyl group, a 2-methyl-n-pentyl group, a 3-methyl Examples of the alkyl group include, but are not limited to, a methyl group, a 4-methyl-n-pentyl group, a 1,1-dimethyl-n-butyl group, a 1,2-dimethyl-n-butyl group, a 1,3-dimethyl-n-butyl group, a 2,2-dimethyl-n-butyl group, a 2,3-dimethyl-n-butyl group, a 3,3-dimethyl-n-butyl group, a 1-ethyl-n-butyl group, a 2-ethyl-n-butyl group, a 1,1,2-trimethyl-n-propyl group, a 1,2,2-trimethyl-n-propyl group, a 1-ethyl-1-methyl-n-propyl group, and a 1-ethyl-2-methyl-n-propyl group. Among these, from the viewpoint of reproducibly obtaining a highly uniform composition, a highly storage stable composition, and a composition that gives a highly uniform film, a methyl group and an ethyl group are preferred, and a methyl group is more preferred.

[0086] Specific examples of the linear or branched alkyl group having 1 to 8 carbon atoms in the alkyl acyl group in which the alkyl moiety is a linear or branched alkyl group having 1 to 8 carbon atoms include the same as the specific examples described above. Among these, from the viewpoints of reproducibly obtaining a highly uniform composition, reproducibly obtaining a composition having high storage stability, and reproducibly obtaining a composition that gives a highly uniform film, a methylcarbonyl group and an ethylcarbonyl group are preferred, and a methylcarbonyl group is more preferred.

[0087] n ｇ is preferably 4 or less, more preferably 3 or less, even more preferably 2 or less, and most preferably 1, from the viewpoint of reproducibly obtaining a highly uniform composition, from the viewpoint of reproducibly obtaining a composition with high storage stability, from the viewpoint of reproducibly obtaining a composition that gives a highly uniform film, etc.

[0088] From the viewpoint of reproducibly obtaining a composition having high uniformity, a composition having high storage stability, and a composition that gives a film having high uniformity, it is preferable that R Ｇ２ and R Ｇ３ At least one of R is a linear or branched alkyl group having 1 to 8 carbon atoms, and more preferably R Ｇ２ and R Ｇ３ One of the groups is a linear or branched alkyl group having 1 to 8 carbon atoms, and the other is a hydrogen atom or an alkylacyl group in which the alkyl portion is a linear or branched alkyl group having 1 to 8 carbon atoms.

[0089]

[0033] From the viewpoint of reproducibly obtaining a highly uniform composition, a highly storage stable composition, and a composition that gives a highly uniform film, the content of the glycol-based solvent in the stripper composition is preferably 50% by mass or more, more preferably 70% by mass or more, even more preferably 80% by mass or more, even more preferably 90% by mass or more, and even more preferably 95% by mass or more, relative to the solvent contained in the stripper composition. From the viewpoint of reproducibly obtaining a highly uniform composition, a highly storage stable composition, and a composition that gives a highly uniform film, the film constituent components in the stripper composition are uniformly dispersed or dissolved, and preferably dissolved, in the solvent.

[0090] In the present invention, for the purpose of removing foreign matter, the solvent, solution, etc. used may be filtered using a filter during the production of the stripping composition or after all of the components have been mixed.

[0091] (Release Agent Composition for Photo-Removal by Light of Second Embodiment B) The release agent composition for photo-removal by light of Second Embodiment B differs from the release agent composition for photo-removal by light of First Embodiment A in that the epoxy-based crosslinking agent is an epoxy-based crosslinking agent that does not contain a siloxane skeleton. Except for the epoxy-based crosslinking agent being an epoxy-based crosslinking agent that does not contain a siloxane skeleton, the components constituting the release agent composition for photo-removal by light of Second Embodiment B can be the same as those described above. A release agent layer formed using the release agent composition for photo-removal by light of Second Embodiment B, which contains a resin (resin X) having at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring, an epoxy-based crosslinking agent that does not contain a siloxane skeleton, and a solvent, exhibits excellent adhesion to the support substrate and can therefore be effectively used not only for the laminate of First Embodiment A but also as the release agent layer in the laminate of Second Embodiment B. As in First Embodiment A, a novolac resin is a more preferred embodiment of Resin X in Second Embodiment B.

[0092] The epoxy crosslinking agent not containing a siloxane skeleton excludes the following epoxy compounds and epoxy resins containing a siloxane skeleton: For example, an epoxy resin containing a siloxane skeleton (hereinafter also referred to as a siloxane skeleton-containing epoxy resin) includes an epoxy resin containing a structure represented by the following formula (A): (In formula (A), R １ represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, or a substituted or unsubstituted aryl group. ２ represents an alkylene group having 1 to 10 carbon atoms. Y represents a single bond or -O-. Ep represents a group represented by the following formula (A-1) or formula (A-2). * represents a bond. (In formula (A-1) and formula (A-2), * represents a bond.)

[0093] The siloxane skeleton-containing epoxy resin is preferably represented by, for example, any one of the following formulas (SE1) to (SE3): In the siloxane skeleton-containing epoxy resins represented by the following formulas (SE1) to (SE3), the repeating units may be arranged randomly. (In formula (SE1), R １０１ ~R １１０ each independently represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, or a substituted or unsubstituted aryl group. １０１ represents a group represented by the following formula (EA): １０１ represents a hydrogen atom, a hydroxyl group, or a monovalent group having 1 to 30 carbon atoms (wherein X １０１ (different from the above). l represents 0 or an integer of 1 or more. m represents an integer of 1 or more. n represents 0 or an integer of 1 or more. In formula (SE2), R ２０１ ~R ２０７ each independently represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, or a substituted or unsubstituted aryl group. ２０１ and X ２０２ each independently represents a group represented by the following formula (EA): ２０１ represents a hydrogen atom, a hydroxy group, or a monovalent group having 1 to 30 carbon atoms. l represents 0 or an integer of 1 or more. m represents 0 or an integer of 1 or more. In formula (SE3), R ３０１ ~R ３０４ each independently represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, or a substituted or unsubstituted aryl group. ３０１ ~X ３０４ each independently represents a group represented by the following formula (EA), and m represents an integer of 1 to 3. (In formula (EA), R ２ represents an alkylene group having 1 to 10 carbon atoms. Y represents a single bond or -O-. Ep represents a group represented by the following formula (A-1) or formula (A-2). * represents a bond. (In formula (A-1) and formula (A-2), * represents a bond.)

[0094] Specific examples of siloxane skeleton-containing epoxy resins include the following: Epoxy resins containing a chain siloxane skeleton, such as 1,3,5-tris(2-(3,4-epoxycyclohexyl)ethyl)-1,1,3,5,5-pentamethyltrisiloxane. Epoxy resins containing a cyclic siloxane skeleton, such as 2,4,6,8-tetrakis(4-(3,4-epoxycyclopentyl)butyl)-2,4,6,8-tetramethylcyclotetrasiloxane, 2,4,6,8-tetrakis(3-(3,4-epoxycyclopentyl)propyl)-2,4,6,8-tetramethylcyclotetrasiloxane, 2,4,6,8-tetrakis(2-(3,4-epoxycyclohexyl)ethyl)-2,4,6,8-tetramethylcyclotetrasiloxane, and 2,4,6,8,10-pentakis(2-(3,4-epoxycyclohexyl)ethyl)-2,4,6,8,10-pentamethylcyclopentasiloxane

[0095] The epoxy-based crosslinking agent in the release agent composition for light irradiation stripping of the second embodiment B may be an epoxy-based compound or epoxy-based resin that does not contain a silicon atom.

[0096] (Laminate (Laminate of First Embodiment A)) As described above, the first embodiment A of the laminate according to the present invention is a laminate having, in this order: a light-transmitting support substrate; a release agent layer for peeling by light irradiation; a metal layer; and a wiring layer (also referred to as a redistribution layer (RDL)).

[0097] The support substrate is optically transparent. The release agent layer for light-based peeling is provided between the metal layer or wiring layer and the support substrate. First embodiment A of the laminate is used in such a way that the metal layer or wiring layer is peeled from the support substrate after the release agent layer absorbs light irradiated from the support substrate side. The release agent layer for light-based peeling is a layer formed from the release agent composition for light-based peeling of first embodiment A of the present invention described above.

[0098] The laminate of the first embodiment A of the present invention may further have a semiconductor chip and a sealing layer on the wiring layer.

[0099] The first embodiment A of the laminate of the present invention is used to manufacture a fan-out type semiconductor package, and can be suitably used to obtain an encapsulating structure having a semiconductor chip, a wiring layer, and an encapsulating layer.

[0100] <Supporting Substrate> The supporting substrate is not particularly limited as long as it is a member that is optically transparent to the light irradiated onto the release agent layer and can support the wiring layer and the sealing structure in order to obtain a sealing structure having a semiconductor chip, a wiring layer, and a sealing layer. Examples of the supporting substrate include a glass supporting substrate and a silicon supporting substrate.

[0101] The shape of the support substrate is not particularly limited, but may be, for example, a disk shape. The disk-shaped support substrate does not need to have a perfectly circular surface; for example, the outer periphery of the support substrate may have a straight line portion called an orientation flat, or a notch. The thickness of the disk-shaped support substrate may be determined appropriately depending on the size of the semiconductor substrate, and is not particularly limited, but is, for example, 500 to 1,000 μm. The diameter of the disk-shaped support substrate may be determined appropriately depending on the size of the semiconductor substrate, and is not particularly limited, but is, for example, 100 to 1,000 mm.

[0102] An example of the support substrate is a glass wafer or a silicon wafer having a diameter of about 300 mm and a thickness of about 700 μm. The release agent layer according to the present invention exhibits particularly good adhesion to support substrates having a high coefficient of linear thermal expansion (CTE) (for example, a glass substrate having a high CTE).

[0103] <Release Agent Layer> The release agent layer is a layer formed from a release agent composition. The release agent layer is provided between the wiring layer and the support substrate. The release agent layer is in contact with the support substrate.

[0104] The release agent layer is formed using the release agent composition for light irradiation peeling of the first embodiment A of the present invention described above. The release agent composition of the present invention can be suitably used to form a release agent layer in a laminate having a metal layer and a wiring layer, a support substrate, and a release agent layer provided between the metal layer and the wiring layer and the support substrate. The laminate is used in such a way that the metal layer and the wiring layer are peeled from the support substrate after the release agent layer absorbs light irradiated from the support substrate side. One of the features of the release agent layer obtained from the release agent composition of the present invention is that the metal layer and the wiring layer can be easily peeled from the support substrate after light irradiation.

[0105] It is believed that when a release agent layer is formed from the release agent composition, resin X (more specifically, for example, a novolac resin) reacts with the epoxy-based crosslinking agent. In the present invention, it is believed that the adhesion performance between the support substrate and the release agent layer is improved due to an electrostatic attraction (dipole-dipole interaction) generated between hydroxy groups generated by the reaction of functional groups in the resin with epoxy groups and surface functional groups such as silanol (Si—OH) groups on the support substrate (for example, a glass surface).

[0106] The thickness of the release agent layer is not particularly limited, but is usually 0.05 to 5 μm. From the viewpoint of maintaining film strength, the thickness is preferably 0.07 μm or more, more preferably 0.1 μm or more, and even more preferably 0.2 μm or more. From the viewpoint of avoiding non-uniformity due to a thick film, the thickness is preferably 4 μm or less, more preferably 3 μm or less, even more preferably 1.5 μm or less, and even more preferably 1.0 μm or less.

[0107] <Metal Layer> Examples of the metal layer include a layer formed from Cu. It is used to form the wiring of the wiring layer (also referred to as a rewiring layer) by plating. The metal layer can be formed by, for example, a sputtering method. The thickness of the metal layer is not particularly limited, but may be, for example, 1 to 1,000 μm. As described below in the section (Method for Manufacturing a Fan-Out Semiconductor Package (Third Embodiment C)), after the wiring layer and the support substrate are separated, the release agent layer remaining on the separated wiring layer is washed. However, if the release agent layer is formed in contact with the wiring layer, the wiring layer will be damaged during washing. Therefore, to prevent damage to the wiring layer during washing, a metal layer is provided between the release agent layer and the wiring layer. The metal layer may be a single layer or may be formed from multiple layers of different types.

[0108] <Wiring Layer> The wiring layer, also called RDL (Redistribution Layer), is a thin-film wiring body that forms wiring connected to a substrate, and can have a single-layer or multi-layer structure. The wiring layer is made of a dielectric material (silicon oxide (SiO ｘ The wiring layer may be formed by forming wiring between a conductive material (for example, a metal such as aluminum, copper, titanium, nickel, gold, or silver, or an alloy such as a silver-tin alloy) and a metal layer (for example, a photosensitive resin such as a photosensitive epoxy, photosensitive resin, etc.), but is not limited to this. Examples of methods for forming the wiring layer include the following methods. First, silicon oxide (SiO ｘ), a dielectric layer of a photosensitive resin or the like is formed. A dielectric layer made of silicon oxide can be formed by, for example, sputtering, vacuum deposition, or the like. A dielectric layer made of a photosensitive resin can be formed by applying the photosensitive resin to a metal layer by, for example, spin coating, dipping, roller blade, spray coating, slit coating, or the like. Subsequently, wiring is formed on the dielectric layer using a conductor such as a metal. Methods for forming wiring include, for example, known semiconductor process techniques such as lithography processes such as photolithography (resist lithography), and etching processes. Examples of such lithography processes include lithography processes using a positive resist material and lithography processes using a negative resist material.

[0109] <Semiconductor Chip> The type of semiconductor chip is not particularly limited, and may be an active element or a passive element, or multiple types of elements may be mounted. Examples of active elements include transistors, ICs, LSIs (Large-Scale Integration), MEMS (Micro Electro Mechanical Systems), relays, LED displays, LED lighting, light-emitting elements such as OLEDs, and sensors. Examples of passive elements include resistors, capacitors, inductors, piezoelectric elements, and batteries. The number of semiconductor chips mounted on the wiring layer is not particularly limited, and any number of semiconductor chips can be mounted. The semiconductor chip mounted on the wiring layer is electrically connected to the wiring in the wiring layer. An insulating adhesive layer may be interposed between the wiring layer and the semiconductor chip.

[0110] <Encapsulating Layer> The encapsulating layer can be formed by encapsulating the semiconductor chip with an encapsulating material. The encapsulating material used for encapsulating the semiconductor chip is a material capable of insulating or encapsulating a metal or semiconductor component. In the present invention, for example, a resin composition (encapsulating resin) is used as the encapsulating material. The type of encapsulating resin is not particularly limited as long as it is capable of encapsulating and / or insulating a metal or semiconductor. For example, epoxy-based resins or silicone-based resins are preferably used. The encapsulating material may contain other components, such as fillers, in addition to the resin component. Examples of fillers include spherical silica particles. In the encapsulating process, the encapsulating resin, heated to, for example, 130 to 170°C, is supplied onto the wiring layer while maintaining a high viscosity, covering the semiconductor chip, and is compression-molded to form a layer of the encapsulating resin on the wiring layer (see, for example, encapsulating layer 6 in FIG. 1E). The temperature conditions are, for example, 130 to 170°C. The pressure applied to the semiconductor chip is, for example, 50 to 500 N / cm. ２ is.

[0111] <Layer Structure of Laminate of First Embodiment A> An example of the structure of the laminate of First Embodiment A will be described below with reference to the drawings. FIG. 1E shows a schematic cross-sectional view of an example of the laminate of First Embodiment A. The laminate of FIG. 1E has a support substrate 1, a release agent layer 2, a metal layer 3, and a wiring layer 4, in this order. The laminate of FIG. 1E further has a plurality of semiconductor chips 5 on the wiring layer 4, and an encapsulation layer (a layer made of an encapsulating resin as an encapsulant) 6 disposed between the semiconductor chips 5. The release agent layer 2 is provided between the metal layer 3 and the wiring layer 4 and the support substrate 1.

[0112] <Method for Producing the Laminate of First Embodiment A> Of the laminates in First Embodiment A, a method for producing the laminate will be described below using the laminate of First Embodiment A shown in Fig. 1 as an example. One example of the laminate of the present invention can be produced, for example, by a method including the following First Step A to Third Step A. First Step A: A step of forming a release agent layer for peeling by light irradiation on a light-transmitting support substrate, more specifically, a step of applying a release agent composition to the support substrate and heating the release agent coating layer to form a release agent layer. Second Step A: A step of forming a metal layer on the release agent layer for peeling by light irradiation. Third Step A: A step of forming a wiring layer on the metal layer.

[0113] Another example of the laminate of the present invention can be produced by a method including, for example, Steps 4 A to 5 A in addition to Steps 1 A to 3 A. Step 4 A: A step of mounting a plurality of semiconductor chips on a wiring layer, more specifically, a step of placing the semiconductor chips on the wiring layer and bonding the semiconductor chips onto the wiring layer while performing at least one of a heat treatment and a pressure treatment (for example, a heat treatment and a pressure reduction treatment). Step 5 A: A step of forming an encapsulating layer on the wiring layer to encapsulate the semiconductor chips, more specifically, a step of encapsulating the semiconductor chips fixed on the wiring layer with an encapsulating resin to form an encapsulating layer.

[0114] The method for applying the release agent composition is not particularly limited, but is typically spin coating. The heating temperature of the applied release agent composition cannot be generally defined because it varies depending on the type and amount of release agent components contained in the release agent composition, the desired thickness of the release agent layer, etc., but from the perspective of reproducibly achieving a suitable release agent layer, it is 80°C or higher and 300°C or lower, and the heating time is typically determined appropriately within the range of 10 seconds to 10 minutes depending on the heating temperature. The heating temperature is preferably 100°C or higher and 280°C or lower, more preferably 150°C or higher and 250°C or lower. The heating time is preferably 30 seconds to 8 minutes, more preferably 1 minute to 5 minutes. Heating can be performed using a hot plate, oven, or the like. The film thickness of the release agent obtained by applying the release agent composition and, if necessary, heating it is typically about 5 nm to 100 μm.

[0115] An example of a method for producing the laminate of FIG. 1E will be described below with reference to FIGS. 1A to 1E. FIGS. 1A to 1E are diagrams illustrating one embodiment of producing a laminate. As shown in FIG. 1A, a release agent coating layer made of a release agent composition is formed on a support substrate 1, and the release agent coating layer is heated to form a release agent layer 2. Next, as shown in FIG. 1B, a metal layer 3 is formed on the release agent layer 2. Next, as shown in FIG. 1C, a wiring layer 4 is formed on the metal layer 3. Next, as shown in FIG. 1D, a semiconductor chip 5 is placed on the wiring layer 4, and while performing at least one of a heat treatment and a pressure treatment (e.g., a heat treatment and a reduced pressure treatment), a load is applied in the thickness direction of the semiconductor chip 5 and the support substrate 1 to bring them into close contact, thereby bonding the semiconductor chip 5 to the wiring layer 4. Next, as shown in FIG. 1E, the semiconductor chip 5 fixed on the wiring layer 4 is encapsulated using an encapsulating resin. 1E, a plurality of semiconductor chips 5 temporarily bonded onto a support substrate 1 via a metal layer 3 and a wiring layer 4 are sealed with a sealing layer (a layer made of sealing resin, which is a sealing material) 6 disposed between the semiconductor chips 5. The sealing layer 6 disposed between the semiconductor chips 5 is formed on the wiring layer 4, and a sealing structure 7 having the wiring layer 4, the semiconductor chips 5, and the sealing layer 6 is formed. The sealing structure 7 is an electronic component in which a plurality of semiconductor chips are embedded in sealing resin.

[0116] (Laminate (Laminate of Second Embodiment B)) As described above, the laminate of the second embodiment B of the present invention has, in this order, a light-transmitting support substrate, a release agent layer for peeling by light irradiation, an adhesive layer, and a semiconductor substrate or electronic device substrate.

[0117] The support substrate is optically transparent. The release agent layer for light-based peeling is provided between the semiconductor substrate or electronic device substrate and the support substrate. Second embodiment B of the laminate is used in peeling the semiconductor substrate or electronic device substrate from the support substrate after the release agent layer absorbs light irradiated from the support substrate side. The release agent layer for light-based peeling is a layer formed from the release agent composition for light-based peeling of second embodiment B of the present invention described above.

[0118] The second embodiment B of the laminate of the present invention is used for temporary bonding to process a semiconductor substrate or an electronic device substrate, and can be suitably used for processing, such as thinning, of a semiconductor substrate or an electronic device substrate. In this specification, the semiconductor substrate and the electronic device substrate are collectively referred to as "semiconductor substrate, etc." While the semiconductor substrate or the electronic device substrate is being processed, such as being thinned, the semiconductor substrate, etc., is supported by a support substrate. After processing the semiconductor substrate, etc., the release agent layer is irradiated with light, and then the support substrate and the semiconductor substrate, etc. are separated. The resin X (more specifically, for example, a novolac resin) contained in the release agent composition for light irradiation peeling of the present invention absorbs light (e.g., laser light) in the release agent layer formed from the release agent composition, thereby altering (e.g., separating or decomposing) the release agent layer. As a result, after the release agent layer is irradiated with light, the semiconductor substrate, etc., and the support substrate are easily peeled off. Furthermore, residues of the release agent layer or adhesive layer remaining on the semiconductor substrate or electronic device substrate after the semiconductor substrate or the like and the supporting substrate are peeled off can be removed, for example, with a cleaning composition for cleaning semiconductor substrates or the like.

[0119] <Support Substrate> The support substrate is not particularly limited as long as it is a member that is optically transparent to the light irradiated onto the release agent layer and can support the semiconductor substrate when the semiconductor substrate is processed, and examples thereof include those similar to those described in the <Support Substrate> section above in (Laminate (Laminate of First Embodiment A)). The release agent layer according to the present invention exhibits particularly good adhesion to support substrates having a high coefficient of linear thermal expansion (CTE) (for example, a glass substrate with a high CTE).

[0120] <Release Agent Layer> The release agent layer is a layer formed from a release agent composition. The release agent layer is provided between a semiconductor substrate or the like and a supporting substrate. The release agent layer is in contact with the supporting substrate.

[0121] The release agent layer is formed using the release agent composition for light irradiation peeling of the second embodiment B of the present invention described above. The release agent composition of the present invention can be suitably used to form a release agent layer in a laminate having a semiconductor substrate or the like, a support substrate, and a release agent layer provided between the semiconductor substrate or the like and the support substrate. The laminate is used in such a way that the semiconductor substrate or the like and the support substrate are peeled off after the release agent layer absorbs light irradiated from the support substrate side. One of the features of the release agent layer obtained from the release agent composition of the present invention is that the semiconductor substrate or the like can be easily peeled off from the support substrate after light irradiation.

[0122] It is believed that when a release agent layer is formed from the release agent composition, resin X (more specifically, for example, a novolac resin) reacts with the epoxy-based crosslinking agent. In the present invention, it is believed that the adhesion performance between the support substrate and the release agent layer is improved due to an electrostatic attraction (dipole-dipole interaction) generated between hydroxy groups generated by the reaction of functional groups in the resin with epoxy groups and surface functional groups such as silanol (Si—OH) groups on the support substrate (for example, a glass surface).

[0123] The thickness of the release agent layer is not particularly limited, but is usually 0.05 to 3 μm. From the viewpoint of maintaining film strength, the thickness is preferably 0.07 μm or more, more preferably 0.1 μm or more, and even more preferably 0.2 μm or more. From the viewpoint of avoiding non-uniformity due to a thick film, the thickness is preferably 2 μm or less, more preferably 1 μm or less, even more preferably 0.8 μm or less, and even more preferably 0.5 μm or less.

[0124] <Adhesive Layer> The adhesive layer is provided between a support substrate and a semiconductor substrate or an electronic device substrate (semiconductor substrate, etc.). The adhesive layer is in contact with, for example, the semiconductor substrate, etc. The adhesive layer is formed from an adhesive composition.

[0125] The thickness of the adhesive layer provided in the laminate of the present invention is not particularly limited, but is usually 5 to 500 μm. From the viewpoint of maintaining film strength, it is preferably 10 μm or more, more preferably 20 μm or more, and even more preferably 30 μm or more. From the viewpoint of avoiding non-uniformity due to a thick film, it is preferably 200 μm or less, more preferably 150 μm or less, even more preferably 120 μm or less, and even more preferably 100 μm or less.

[0126] <<Adhesive Composition>> Examples of adhesive compositions (hereinafter sometimes referred to as "adhesive composition used in the present invention") include, but are not limited to, polysiloxane-based adhesives, acrylic resin-based adhesives, epoxy resin-based adhesives, polyamide-based adhesives, polystyrene-based adhesives, polyimide adhesives, and phenolic resin-based adhesives. Among these, polysiloxane-based adhesives are preferred as the adhesive composition because they exhibit suitable adhesive performance during processing of semiconductor substrates and the like, allow suitable removability after processing, have excellent heat resistance, and can be suitably removed with a cleaning composition. The adhesive composition used here is usually not the adhesive composition for peeling by light irradiation of the present invention.

[0127] In a preferred embodiment, the adhesive composition contains a polyorganosiloxane. In another preferred embodiment, the adhesive composition contains a component that cures via a hydrosilylation reaction.

[0128] For example, the adhesive composition used in the present invention contains a curable component (A) that serves as an adhesive component. The adhesive composition used in the present invention may contain a curable component (A) that serves as an adhesive component and a component (B) that does not undergo a curing reaction. Here, an example of the component (B) that does not undergo a curing reaction is polyorganosiloxane. Note that, in the present invention, "does not undergo a curing reaction" does not mean that any curing reaction does not occur, but rather that the curing reaction occurring in the curable component (A) does not occur. In a preferred embodiment, component (A) may be a component that cures via a hydrosilylation reaction, or may be a polyorganosiloxane component (A') that cures via a hydrosilylation reaction. In another preferred embodiment, component (A) contains, for example, a polyorganosiloxane (a1) having an alkenyl group having 2 to 40 carbon atoms bonded to a silicon atom, a polyorganosiloxane (a2) having Si—H groups, and a platinum group metal catalyst (A2), as an example of component (A'). Here, the alkenyl group having 2 to 40 carbon atoms may be substituted. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxyl group, an aryl group, and a heteroaryl group.

[0129] In another preferred embodiment, the polyorganosiloxane component (A') that cures via a hydrosilylation reaction is SiO ２ Siloxane units (Q units) represented by R １ R ２ R ３ SiO １／２ Siloxane units (M units) represented by R ４ R ５ SiO ２／２ Siloxane units (D units) represented by the formula: and R ６ SiO ３／２ and a platinum group metal catalyst (A2), wherein the polysiloxane (A1) contains one or more units selected from the group consisting of siloxane units (T units) represented by the following formula: ２ Siloxane units (Q′ units) represented by R １ 'R ２ 'R３ 'SiO １／２ Siloxane units (M′ units) represented by R ４ 'R ５ 'SiO ２／２ Siloxane units (D′ units) represented by the formula: ６ 'SiO ３／２ and a polyorganosiloxane (a1') containing at least one unit selected from the group consisting of M' units, D' units, and T' units, and SiO ２ Siloxane units (Q″ units) represented by R １ "R ２ "R ３ "SiO １／２ Siloxane units (M″ units) represented by R ４ "R ５ "SiO ２／２ Siloxane units (D″ units) represented by the formula: ６ "SiO ３／２ and a polyorganosiloxane (a2') containing one or more units selected from the group consisting of siloxane units (T" units) represented by the following formula: and containing at least one unit selected from the group consisting of M" units, D" units, and T" units. Note that (a1') is an example of (a1), and (a2') is an example of (a2).

[0130] R １ ~R ６ are groups or atoms bonded to the silicon atom, and each independently represents an optionally substituted alkyl group, an optionally substituted alkenyl group, or a hydrogen atom. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxyl group, a carboxyl group, an aryl group, and a heteroaryl group.

[0131] R １ '~R ６ R ′ is a group bonded to a silicon atom, and each independently represents an optionally substituted alkyl group or an optionally substituted alkenyl group. １ '~R ６At least one of the groups ' is an alkenyl group which may be substituted. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxyl group, an aryl group, and a heteroaryl group.

[0132] R １ "~R ６ " are groups or atoms bonded to the silicon atom, and each independently represents an optionally substituted alkyl group or a hydrogen atom, but R １ "~R ６ At least one of " is a hydrogen atom. Examples of the substituent include a halogen atom, a nitro group, a cyano group, an amino group, a hydroxy group, a carboxyl group, an aryl group, and a heteroaryl group.

[0133] The alkyl group may be linear, branched, or cyclic, but is preferably a linear or branched alkyl group. The number of carbon atoms is not particularly limited, but is usually 1 to 40, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less.

[0134] As described above, the polysiloxane (A1) contains the polyorganosiloxane (a1') and the polyorganosiloxane (a2'), and the alkenyl group contained in the polyorganosiloxane (a1') and the hydrogen atom (Si-H group) contained in the polyorganosiloxane (a2') form a crosslinked structure by a hydrosilylation reaction with the platinum group metal catalyst (A2), and the crosslinked structure is cured. As a result, a cured film is formed.

[0135] The polyorganosiloxane (a1') contains one or more units selected from the group consisting of Q' units, M' units, D' units and T' units, and also contains at least one unit selected from the group consisting of M' units, D' units and T' units. As the polyorganosiloxane (a1'), two or more polyorganosiloxanes satisfying these conditions may be used in combination.

[0136] Preferred combinations of two or more selected from the group consisting of Q' units, M' units, D' units and T' units include, but are not limited to, (Q' units and M' units), (D' units and M' units), (T' units and M' units), and (Q' units, T' units and M' units).

[0137] In addition, when two or more types of polyorganosiloxanes are included in the polyorganosiloxane (a1'), a combination of (Q' units and M' units) and (D' units and M' units), a combination of (T' units and M' units) and (D' units and M' units), a combination of (Q' units, T' units and M' units) and (T' units and M' units) is preferred, but is not limited to these.

[0138] The polyorganosiloxane (a2') contains one or more units selected from the group consisting of Q" units, M" units, D" units, and T" units, and also contains at least one unit selected from the group consisting of M" units, D" units, and T" units. As the polyorganosiloxane (a2'), two or more polyorganosiloxanes satisfying these conditions may be used in combination.

[0139] In a preferred embodiment of the present invention, the adhesive composition contains a platinum group metal catalyst (A2) in addition to the polyorganosiloxane component (A'). Such a platinum group metal catalyst is a catalyst for promoting the hydrosilylation reaction between the alkenyl groups of the polyorganosiloxane (a1) and the Si—H groups of the polyorganosiloxane (a2).

[0140] Specific examples of platinum-based metal catalysts include, but are not limited to, platinum black, platinic chloride, chloroplatinic acid, reaction products of chloroplatinic acid and monohydric alcohols, complexes of chloroplatinic acid and olefins, and platinum bisacetoacetate. Examples of complexes of platinum and olefins include, but are not limited to, complexes of divinyltetramethyldisiloxane and platinum. The amount of the platinum group metal catalyst (A2) is not particularly limited, but is usually in the range of 1.0 to 50.0 ppm relative to the total amount of the polyorganosiloxane (a1) and the polyorganosiloxane (a2).

[0141] <Semiconductor Substrate or Electronic Device Substrate> <<Semiconductor Substrate>> The main material constituting the entire semiconductor substrate is not particularly limited as long as it is suitable for this type of application, and examples thereof include silicon, silicon carbide, compound semiconductors, and glass substrates with organic resins. The shape of the semiconductor substrate is not particularly limited, and may be, for example, a disk. Note that the surface shape of a disk-shaped semiconductor substrate does not need to be perfectly circular; for example, the outer periphery of the semiconductor substrate may have a linear portion called an orientation flat or a notch. The thickness of the disk-shaped semiconductor substrate may be determined appropriately depending on the intended use of the semiconductor substrate, and is not particularly limited, and is, for example, 500 to 1,000 μm. The diameter of the disk-shaped semiconductor substrate may be determined appropriately depending on the intended use of the semiconductor substrate, and is not particularly limited, and is, for example, 100 to 1,000 mm.

[0142] The semiconductor substrate may have bumps. Bumps are protruding terminals. In a laminate, when the semiconductor substrate has bumps, the bumps are located on the support substrate side. In a semiconductor substrate, the bumps are typically formed on the surface on which the circuit is formed. The circuit may be single-layered or multi-layered. The shape of the circuit is not particularly limited. In a semiconductor substrate, the surface opposite to the surface having the bumps (the back surface) is the surface used for processing. The material, size, shape, structure, and density of the bumps on the semiconductor substrate are not particularly limited. Examples of bumps include ball bumps, printed bumps, stud bumps, and plated bumps. The height, radius, and pitch of the bumps are typically determined appropriately based on the following conditions: a bump height of approximately 1 to 200 μm, a bump radius of 1 to 200 μm, and a bump pitch of 1 to 500 μm. Examples of bump materials include low-melting-point solder, high-melting-point solder, tin, indium, gold, silver, and copper. The bump may be composed of only a single component or multiple components. More specifically, examples include alloy platings mainly containing Sn, such as SnAg bumps, SnBi bumps, Sn bumps, and AuSn bumps. The bump may also have a laminate structure including a metal layer composed of at least one of these components.

[0143] An example of a semiconductor substrate is a silicon wafer with a diameter of about 300 mm and a thickness of about 770 μm.

[0144] <<Electronic Device Substrate>> An electronic device substrate refers to a substrate having an electronic device. In the present invention, for example, it refers to a substrate consisting of a layer in which multiple semiconductor chips are embedded in a sealing resin, that is, a substrate consisting of multiple semiconductor chips and a sealing resin disposed between the semiconductor chips. Here, "electronic device" refers to a member that constitutes at least a part of an electronic component. The electronic device is not particularly limited and can be a semiconductor substrate having various mechanical structures or circuits formed on the surface thereof. The electronic device is preferably a composite of a member made of a metal or semiconductor and a resin that seals or insulates the member. The electronic device may have a wiring layer (described later) and / or a semiconductor element or other element sealed or insulated with a sealing material or an insulating material, and may have a single-layer or multi-layer structure.

[0145] <Layer Structure of the Laminate of Second Embodiment B> An example of the structure of the laminate of Second Embodiment B will be described below with reference to the drawings. Among the laminates of Second Embodiment B, a laminate having a semiconductor substrate and a laminate having an electronic device substrate will be described separately. A case in which a semiconductor substrate is used as the substrate will be described as Second Embodiment B-1 of Second Embodiment B, and a case in which an electronic device substrate is used as the substrate will be described as Second Embodiment B-2 of Second Embodiment B. FIG. 2C shows a schematic cross-sectional view of an example of a laminate of Second Embodiment B-1 using a semiconductor substrate as the substrate. The laminate of FIG. 2C has, in this order, a semiconductor substrate 14, an adhesive layer 13, a release agent layer 12, and a support substrate 11. The adhesive layer 13 and the release agent layer 12 are provided between the semiconductor substrate 14 and the support substrate 11. The adhesive layer 13 is in contact with the semiconductor substrate 14. The release agent layer 12 is in contact with the adhesive layer 13 and the support substrate 11.

[0146] 3D is a schematic cross-sectional view of an example of a laminate using an electronic device substrate as the substrate, which is a second embodiment B-2. The laminate of FIG. 3D includes, in this order, a support substrate 31, a release agent layer 32, an adhesive layer 33, and an electronic device substrate 37. The electronic device substrate 37 includes a plurality of semiconductor chips 35 and sealing layers 36 (layers made of sealing resin as a sealing material) disposed between the semiconductor chips 35. The release agent layer 32 is provided between the electronic device substrate 37 and the support substrate 31.

[0147] <Method for Producing the Laminate of Second Embodiment B> <<Method for Producing the Laminate of Second Embodiment B-1>> ​​Of the laminates in Second Embodiment B, the method for producing the laminate will be described below using the laminate of Second Embodiment B-1 shown in FIG. 2 as an example. One example of the laminate of the present invention can be produced, for example, by a method including the following first step B-1 to third step B-1. First step B-1: A step of applying an adhesive composition onto a semiconductor substrate to form an adhesive coating layer (and, if necessary, heating to form an adhesive layer). Second step B-2: A step of applying a release agent composition onto a support substrate to form a release agent coating layer (and, if necessary, heating to form a release agent layer). Third step B-3: A step of performing a heat treatment or a pressure treatment (for example, a heat treatment or a reduced pressure treatment) while the adhesive coating layer or adhesive layer and the release agent coating layer or release agent layer are in contact with each other to form a laminate in which the adhesive layer and the release agent layer are bonded together.

[0148] The method for applying the adhesive composition is not particularly limited, but is typically spin coating. Alternatively, a method can be employed in which a coating film is formed separately by spin coating or the like, a sheet-like coating film is formed, and the sheet-like coating film is then applied as an adhesive coating layer. The heating temperature of the applied adhesive composition cannot be generally specified because it varies depending on the type and amount of adhesive components contained in the adhesive composition, whether or not a solvent is contained, the boiling point of the solvent used, the desired thickness of the adhesive layer, and other factors. However, it is typically 80 to 150°C, and the heating time is typically 30 seconds to 5 minutes. When the adhesive composition contains a solvent, the applied adhesive composition is typically heated. The thickness of the adhesive coating layer obtained by applying the adhesive composition and, if necessary, heating it is typically about 5 to 500 μm, and is appropriately determined so as to ultimately achieve the above-mentioned range of adhesive layer thickness.

[0149] The method for applying the release agent composition is not particularly limited, but is typically spin coating. The heating temperature of the applied release agent composition cannot be generally defined because it varies depending on the type and amount of release agent components contained in the release agent composition, the desired thickness of the release agent layer, etc., but from the perspective of reproducibly achieving a suitable release agent layer, it is 80°C or higher and 300°C or lower, and the heating time is typically determined appropriately within the range of 10 seconds to 10 minutes depending on the heating temperature. The heating temperature is preferably 100°C or higher and 280°C or lower, more preferably 150°C or higher and 250°C or lower. The heating time is preferably 30 seconds to 8 minutes, more preferably 1 minute to 5 minutes. Heating can be performed using a hot plate, oven, or the like. The film thickness of the release agent obtained by applying the release agent composition and, if necessary, heating it is typically about 5 nm to 100 μm.

[0150] In the present invention, the laminate of the present invention can be obtained by placing such coating layers in contact with each other, applying a load in the thickness direction of the semiconductor substrate and the support substrate while performing a heat treatment or a decompression treatment, or both, to adhere the two layers, and then performing a post-heat treatment. Note that the treatment conditions to be adopted, whether heat treatment, decompression treatment, or a combination of both, are appropriately determined taking into consideration various factors such as the type of adhesive composition, the specific composition of the release agent composition, the compatibility of the films obtained from the two compositions, the film thickness, and the desired adhesive strength.

[0151] The heat treatment temperature is generally determined appropriately from the range of 20 to 150° C. from the viewpoints of removing the solvent from the composition, softening the adhesive coating layer to realize suitable bonding with the release agent layer, etc. In particular, from the viewpoints of suppressing or avoiding excessive curing or unnecessary deterioration of the adhesive component (A), the heat treatment temperature is preferably 130° C. or lower, more preferably 90° C. or lower, and the heating time is determined appropriately depending on the heating temperature and the type of adhesive, but is generally 30 seconds or longer, preferably 1 minute or longer, from the viewpoint of reliably achieving suitable adhesion, and is generally 10 minutes or shorter, preferably 5 minutes or shorter, from the viewpoint of suppressing deterioration of the adhesive layer and other members.

[0152] The reduced pressure treatment can be carried out by exposing the adhesive coating layer and the release agent layer, which are in contact with each other, to an atmospheric pressure of 10 to 10,000 Pa. The reduced pressure treatment time is usually 1 to 30 minutes.

[0153] From the viewpoint of reproducibly obtaining a laminate from which the substrates can be easily separated, the two layers that contact each other are preferably bonded together by a reduced pressure treatment, more preferably by a combination of a heat treatment and a reduced pressure treatment.

[0154] The load in the thickness direction of the semiconductor substrate and the support substrate is not particularly limited as long as it does not adversely affect the semiconductor substrate, the support substrate, and the two layers therebetween and can firmly adhere them to each other, but is usually within the range of 10 to 1000 N.

[0155] The post-heating temperature is preferably 120°C or higher from the viewpoint of achieving a sufficient curing rate, and preferably 260°C or lower from the viewpoint of preventing deterioration of the substrate and each layer. The post-heating time is usually 1 minute or longer, preferably 5 minutes or longer, from the viewpoint of achieving suitable bonding of the substrate and layers constituting the laminate, and usually 180 minutes or shorter, preferably 120 minutes or shorter, from the viewpoint of suppressing or avoiding adverse effects on each layer due to excessive heating. Heating can be performed using a hot plate, oven, or the like. When post-heating is performed using a hot plate, either the semiconductor substrate or the support substrate of the laminate may be heated facing down, but from the viewpoint of achieving suitable and reproducible peeling, post-heating with the semiconductor substrate facing down is preferred. Note that one purpose of the post-heating treatment is to achieve a more suitable self-standing adhesive layer and release agent layer, particularly to achieve suitable curing by a hydrosilylation reaction.

[0156] An example of a method for producing the laminate of FIG. 2C will be described below with reference to FIGS. 2A to 2C. FIGS. 2A to 2C are diagrams illustrating one embodiment of producing a laminate. First, a laminate is prepared in which an adhesive layer 13 is formed on a semiconductor substrate 14 ( FIG. 2A ). This laminate can be obtained, for example, by applying an adhesive composition to the semiconductor substrate 14. Later, the laminate may be formed as an adhesive coating layer or an adhesive layer after heating, whichever is more appropriate. Separately, a laminate is prepared in which a release agent layer 12 is formed on a support substrate 11 ( FIG. 2B ). This laminate can be obtained, for example, by applying a release agent composition to the support substrate 11. Later, the laminate may be formed as a release agent coating layer or a release agent layer after heating, whichever is more appropriate. Next, the laminate shown in FIG. 2A and the laminate shown in FIG. 2B are bonded together so that the adhesive layer 13 and the release agent layer 12 are in contact with each other. For example, after applying a load in the thickness direction of the semiconductor substrate 14 and the support substrate 11 under reduced pressure, a heating device (hot plate, not shown) is placed on the surface of the semiconductor substrate 14 opposite to the surface in contact with the adhesive layer 13, and the adhesive layer 13 is cured by heating to form a laminate in which the adhesive layer 13 and the release agent layer 12 are bonded together (FIG. 2C). The laminate is obtained by the steps shown in FIGS. 2A to 2C.

[0157] <<Method for Producing Laminate of Second Embodiment B-2>> A method for producing the laminate of the second embodiment B-2 shown in Fig. 3 will be described below as an example of the laminate of the second embodiment B. An example of the laminate of the present invention can be produced, for example, by a method including the following first step B-2 to fifth step B-2. First step B-2: A step of applying a release agent composition onto a support substrate to form a release agent coating layer (if necessary, heating to form a release agent layer). Second step B-2: A step of applying an adhesive composition to the surface of the release agent coating layer or release agent layer to form an adhesive coating layer (if necessary, further heating to form an adhesive layer). Third step B-2: A step of placing a semiconductor chip on the adhesive coating layer or adhesive layer, and bonding the semiconductor chip to the adhesive coating layer or adhesive layer while performing at least one of a heat treatment and a pressure treatment (for example, a heat treatment and a decompression treatment). Fourth step B-2: A step of forming a hardened adhesive layer by post-heating the adhesive coating layer or adhesive layer. Fifth step B-2: A step of forming an encapsulating layer by encapsulating the semiconductor chip fixed on the adhesive layer using an encapsulating resin.

[0158] The fourth step B-2 may be performed after bonding the semiconductor chip to the adhesive coating layer in the third step B-2, or may be performed in conjunction with the third step B-2. For example, the semiconductor chip may be placed on the adhesive coating layer, and the adhesive coating layer may be heated and cured while applying a load in the thickness direction of the semiconductor chip and the support substrate, thereby simultaneously adhering the semiconductor chip to the adhesive coating layer and curing the adhesive coating layer to the adhesive layer, thereby bonding the adhesive layer to the semiconductor chip. The fourth step B-2 may also be performed before the third step B-2, and the semiconductor chip may be placed on the adhesive layer, and the adhesive layer may be bonded to the semiconductor chip while applying a load in the thickness direction of the semiconductor chip and the support substrate.

[0159] The application method, the heating temperature of the applied release agent composition or adhesive composition, the heating means, etc. are as described above in <<Production method of laminate of second embodiment B-1>>.

[0160] An example of a method for producing the laminate of FIG. 3D will be described below with reference to FIGS. 3A to 3D. FIGS. 3A to 3D are diagrams illustrating one embodiment of producing a laminate. First, a laminate comprising a release-agent-coated layer 32 is prepared on a support substrate 31 ( FIG. 3A ). This laminate can be obtained, for example, by applying a release agent composition to the support substrate 31. Later, by main heating, either a release-agent-coated layer or a release agent layer can be formed by heating. Next, a laminate comprising an adhesive layer 33 is prepared on the release-agent-coated layer or release agent layer 32 ( FIG. 3B ). This laminate can be obtained, for example, by applying an adhesive composition to the release-agent-coated layer or release agent layer 32. Later, by main heating, either a release-agent-coated layer or an adhesive layer can be formed by heating. Next, as shown in FIG. 3C , a semiconductor chip 35 is placed on the adhesive coating layer or adhesive layer 33, and while performing at least one of heat treatment and pressure treatment (e.g., heat treatment and decompression treatment), a load is applied in the thickness direction of the semiconductor chip 35 and the support substrate 31 to bring them into close contact, thereby bonding the semiconductor chip 35 to the adhesive coating layer or adhesive layer 33. When the semiconductor chip 35 is bonded to the adhesive coating layer, the adhesive coating layer is post-heat treated to harden it into the adhesive layer 33, and the semiconductor chip 35 is fixed to the adhesive layer 33. Note that when the adhesive coating layer is post-heat treated, the release agent coating layer may also be post-heat treated to form the release agent layer 32. Next, as shown in FIG. 3D , the semiconductor chip 35 fixed on the adhesive layer 33 is encapsulated using an encapsulating resin. In FIG. 3D , multiple semiconductor chips 35 temporarily attached to the support substrate 31 via the adhesive layer 33 are encapsulated by an encapsulating layer 36 (a layer made of an encapsulating resin as an encapsulant) arranged between the semiconductor chips 35. An electronic device substrate 37 having semiconductor chips 35 and a sealing layer 36 arranged between the semiconductor chips 35 is formed on the adhesive layer 33. In this way, the electronic device substrate 37 is a base material layer in which multiple semiconductor chips are embedded in a sealing resin.

[0161] <<<Encapsulating Step>>> The semiconductor chip 35 is encapsulated using an encapsulant. The encapsulant used for encapsulating the semiconductor chip 35 is a material capable of insulating or encapsulating components made of metal or semiconductor. In the present invention, for example, a resin composition (encapsulating resin) is used as the encapsulant. The type of encapsulating resin is not particularly limited as long as it is capable of encapsulating and / or insulating metal or semiconductor, but it is preferable to use, for example, an epoxy-based resin or a silicone-based resin. The encapsulating material may contain other components such as a filler in addition to the resin component. Examples of fillers include spherical silica particles. In the encapsulating step, the encapsulating resin, heated to, for example, 130 to 170°C, is supplied onto the adhesive layer 33 while maintaining a high viscosity, so as to cover the semiconductor chip 35, and is compression-molded to form a layer of the encapsulating resin 36 on the adhesive layer 33. The temperature conditions during this process are, for example, 130 to 170°C. The pressure applied to the semiconductor chip 35 is, for example, 50 to 500 N / cm. ２ is.

[0162] (Method for Manufacturing Fan-Out Type Semiconductor Package (Third Embodiment C)) By using the stack of the first embodiment A according to the present invention, it is possible to provide a method for manufacturing a fan-out type semiconductor package.

[0163] The method for manufacturing a fan-out type semiconductor package of the present invention is characterized by comprising the steps of: irradiating a laminate of the first embodiment A of the present invention, in which a plurality of semiconductor chips are mounted on the wiring layer and a sealing layer for sealing the semiconductor chips is formed on the wiring layer, with light from the support substrate side to separate the wiring layer and the support substrate; removing the metal layer on the wiring layer to obtain a sealing structure having the semiconductor chips, the wiring layer, and the sealing layer; and dividing the sealing structure to obtain individual semiconductor packages. Thus, the method for manufacturing a fan-out type semiconductor package of the present invention comprises, for example, the following steps 6 to 10. Sixth step: a step of preparing a laminate of the first embodiment A of the present invention, in which a plurality of semiconductor chips are mounted on the wiring layer and a sealing layer for sealing the semiconductor chips is formed on the wiring layer (note that the laminate can be obtained by the manufacturing method described above); Seventh step: a step of separating the wiring layer and the support substrate by irradiating the laminate obtained in the sixth step with light from the support substrate side; Eighth step: a step of cleaning the separated wiring layer side; Ninth step: a step of removing the metal layer on the wiring layer to obtain a sealing structure having a semiconductor chip, a wiring layer, and a sealing layer; Tenth step: a step of dividing the sealing structure to obtain individual semiconductor packages.

[0164] In the seventh step, the method for separating (peeling) the wiring layer from the support substrate includes, but is not limited to, mechanical peeling using a tool with a sharp part after irradiating the release agent layer with light, peeling by pulling the wiring layer and the support substrate together, etc. By irradiating the release agent layer with light from the support substrate side, the release agent layer is altered (for example, separated or decomposed) as described above, and then, for example, one of the substrates can be pulled up to easily separate the wiring layer from the support substrate.

[0165] The light irradiation of the release agent layer does not necessarily have to be performed on the entire area of ​​the release agent layer. Even if there are areas irradiated with light and areas not irradiated with light, as long as the release ability of the release agent layer as a whole is sufficiently improved, the wiring layer and the support substrate can be separated by a slight external force, such as by lifting up the support substrate. The ratio and positional relationship between the areas irradiated with light and the areas not irradiated with light vary depending on the thickness of the release agent layer, the intensity of the irradiated light, etc., but the conditions may be set appropriately. Usually, the light irradiation dose for peeling is 50 to 3,000 mJ / cm. ２ The irradiation time is appropriately determined depending on the wavelength and the irradiation amount.

[0166] The wavelength of the light used for peeling is, for example, preferably 250 to 600 nm, and more preferably 250 to 370 nm. More preferred wavelengths are 308 nm, 343 nm, 355 nm, 365 nm, or 532 nm. The amount of light required for peeling is an amount that can cause suitable alteration, such as decomposition, of resin X (more specifically, for example, novolac resin). The light used for peeling may be laser light or non-laser light emitted from a light source such as an ultraviolet lamp.

[0167] The surface of the substrate on the side of the separated wiring layer (the surface of the metal layer or the wiring layer) can be cleaned by spraying the cleaning composition onto the surface of the separated wiring layer (the surface of the metal layer or the wiring layer) or by immersing the separated metal layer and wiring layer in the cleaning composition. Examples of cleaning compositions used for cleaning include the following.

[0168] The cleaning agent composition usually contains a solvent. Examples of the solvent include lactones, ketones, polyhydric alcohols, compounds having an ester bond, derivatives of polyhydric alcohols, cyclic ethers, esters, and aromatic organic solvents. Examples of the lactones include γ-butyrolactone. Examples of the ketones include acetone, methyl ethyl ketone, cyclohexanone, methyl-n-pentyl ketone, methyl isopentyl ketone, and 2-heptanone. Examples of the polyhydric alcohols include ethylene glycol, diethylene glycol, propylene glycol, and dipropylene glycol. Examples of compounds having an ester bond include ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, and dipropylene glycol monoacetate. Examples of derivatives of polyhydric alcohols include compounds having an ether bond, such as monoalkyl ethers or monophenyl ethers of the above polyhydric alcohols or compounds having an ester bond, such as monomethyl ether, monoethyl ether, monopropyl ether, and monobutyl ether. Among these, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME) are preferred. Examples of cyclic ethers include dioxane. Examples of esters include methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, and ethyl ethoxypropionate. Examples of aromatic organic solvents include anisole, ethyl benzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenetole, butylphenyl ether, ethylbenzene, diethylbenzene, pentylbenzene, isopropylbenzene, toluene, xylene, cymene, mesitylene, etc. These can be used alone or in combination of two or more.Among these, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, and ethyl lactate (EL) are preferred.

[0169] Also preferred are mixed solvents containing PGMEA and a polar solvent. The blending ratio (mass ratio) can be determined appropriately taking into account the compatibility of the PGMEA and the polar solvent, but is preferably within the range of 1:9 to 9:1, and more preferably 2:8 to 8:2. For example, when EL is blended as the polar solvent, the mass ratio of PGMEA:EL is preferably 1:9 to 9:1, and more preferably 2:8 to 8:2. When PGME is blended as the polar solvent, the mass ratio of PGMEA:PGME is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, and even more preferably 3:7 to 7:3. When PGME and cyclohexanone are blended as the polar solvents, the mass ratio of PGMEA:(PGME + cyclohexanone) is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, and even more preferably 3:7 to 7:3.

[0170] The cleaning composition may or may not contain a salt; however, the absence of a salt is preferred in terms of increasing versatility in processing a substrate on the wiring layer side using the laminate and reducing costs.

[0171] An example of a detergent composition containing a salt is a detergent composition containing a quaternary ammonium salt and a solvent. The quaternary ammonium salt is composed of a quaternary ammonium cation and an anion, and is not particularly limited as long as it is used for this type of application. A typical example of such a quaternary ammonium cation is a tetra(hydrocarbon)ammonium cation. On the other hand, the anion paired with the quaternary ammonium cation is a hydroxide ion (OH － ) ; fluorine ion (F － ), chloride ions (Cl － ), bromine ion (Br － ), iodine ion (I － ) and other halogen ions; tetrafluoroborate ion (BF４ － ) ; hexafluorophosphate ion (PF ６ － ) and the like, but are not limited to these.

[0172] The quaternary ammonium salt is preferably a halogen-containing quaternary ammonium salt, more preferably a fluorine-containing quaternary ammonium salt. In the quaternary ammonium salt, the halogen atom may be contained in either the cation or the anion, but is preferably contained in the anion.

[0173] In a preferred embodiment, the fluorine-containing quaternary ammonium salt is tetra(hydrocarbon)ammonium fluoride. Specific examples of the hydrocarbon group in tetra(hydrocarbon)ammonium fluoride include alkyl groups having 1 to 20 carbon atoms, alkenyl groups having 2 to 20 carbon atoms, alkynyl groups having 2 to 20 carbon atoms, and aryl groups having 6 to 20 carbon atoms. In a more preferred embodiment, the tetra(hydrocarbon)ammonium fluoride includes tetraalkylammonium fluoride. Specific examples of tetraalkylammonium fluorides include, but are not limited to, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, and tetrabutylammonium fluoride (also known as tetrabutylammonium fluoride). Of these, tetrabutylammonium fluoride is preferred.

[0174] The quaternary ammonium salts such as tetra(hydrocarbon)ammonium fluoride may be used in the form of a hydrate. The quaternary ammonium salts such as tetra(hydrocarbon)ammonium fluoride may be used singly or in combination of two or more. The amount of the quaternary ammonium salt is not particularly limited as long as it dissolves in the solvent contained in the cleaning composition, but is usually 0.1 to 30 mass% based on the cleaning composition.

[0175] When the cleaning composition contains a salt, the solvent to be used in combination with the salt is not particularly limited as long as it is used for this type of application and dissolves the salt such as a quaternary ammonium salt. However, from the viewpoint of reproducibly obtaining a cleaning composition having excellent cleaning properties and from the viewpoint of satisfactorily dissolving the salt such as a quaternary ammonium salt to obtain a cleaning composition having excellent uniformity, the cleaning composition preferably contains one or two or more amide solvents.

[0176] The components and methodological elements of the above-described steps of the method for manufacturing a fan-out type semiconductor package of the present invention may be modified in various ways without departing from the spirit of the present invention. The method for manufacturing a fan-out type semiconductor package of the present invention may include steps other than the steps described above.

[0177] An example of a method for manufacturing a fan-out type semiconductor package according to the third embodiment C will be described with reference to the drawings.

[0178] An example of the third embodiment C will be described with reference to Figures 1E to 1G. First, a laminate is prepared (Figure 1E). The method for producing this laminate is as described above. Next, the release agent layer 2 is irradiated with light from the support substrate 1 side (Figure 1F), and then the metal layer 3 and wiring layer 4 on the wiring layer 4 side are separated from the support substrate 1 using a peeling device (not shown) (Figure 1G). Here, residues of the metal layer 3 and the release agent layer 2 may remain on the surface of the wiring layer 4 of the sealing structure 7 having the semiconductor chip 5, wiring layer 4, and sealing layer 6. Therefore, the sealing structure 7 can be cleaned using a detergent composition to remove the residue of the release agent layer 2 from the surface of the wiring layer 4 of the sealing structure 7. Then, the metal layer 3 can be removed from the surface of the wiring layer 4 of the sealing structure 7 by etching. By removing the release agent layer and metal layer, a sealing structure 7 having the semiconductor chip 5, wiring layer 4, and sealing layer 6 as shown in Figure 1H can be obtained. Thereafter, by dividing the sealing structure 7, individual fan-out type semiconductor packages (electronic components having semiconductor chips and wiring layers) can be suitably obtained.

[0179] (Method for manufacturing a processed semiconductor substrate or an electronic device substrate (Fourth embodiment D)) By using the laminate of the second embodiment B according to the present invention, it is possible to provide a method for manufacturing a processed semiconductor substrate or a method for manufacturing a processed electronic device substrate.

[0180] The method for producing a processed semiconductor substrate or electronic device substrate of the present invention is characterized by comprising: a processing step in which a semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) in the laminate of the second embodiment B of the present invention is processed; and a separation step in which the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) processed in the processing step is separated from a support substrate. Thus, the method for producing a processed semiconductor substrate or electronic device substrate of the present invention comprises the following sixth step and seventh step. The method for producing a processed semiconductor substrate or electronic device substrate may further comprise the following eighth step. Sixth step: a step of processing the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) in the laminate of the present invention; Seventh step: a step of separating the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) processed in the sixth step from the support substrate; and Eighth step: a step of cleaning the processed semiconductor substrate or electronic device substrate after the seventh step.

[0181] The processing performed on the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) in the sixth step is, for example, processing of the side opposite the circuit surface of the wafer, such as thinning the wafer by polishing the back surface of the wafer. Thereafter, for example, through-silicon vias (TSVs) are formed, and then the thinned wafer is peeled off from the support substrate to form a wafer stack, which is then three-dimensionally mounted. Also, for example, before or after this, formation of wafer backside electrodes, etc. is also performed. During the wafer thinning and TSV process, a heat load of approximately 250 to 350°C is applied while the wafer is adhered to the support substrate. The laminate of the present invention, including the adhesive layer, typically has heat resistance to this load. Note that the processing is not limited to the above-described processing, and also includes, for example, the implementation of a semiconductor component mounting process when the wafer is temporarily adhered to a support substrate to support the substrate for mounting the semiconductor component.

[0182] In particular, when the laminate has an electronic device substrate, examples of the processing performed on the electronic device substrate in the sixth step include the grinding step and wiring layer formation step described below.

[0183] <Grinding Step> The grinding step is a step of grinding the resin portion of the sealing layer 36 on the electronic device substrate 37 so as to expose a part of the semiconductor chip 35 (see FIG. 3E).

[0184] <Wiring Layer Forming Process> The wiring layer forming process is a process of forming a wiring layer on the exposed semiconductor chip 35 after the grinding process (see FIG. 3F). The wiring layer is also called an RDL (Redistribution Layer), and is a thin-film wiring body that constitutes wiring connected to the substrate, and can have a single-layer or multi-layer structure. The wiring layer is made of a dielectric (silicon oxide (SiO ｘ The wiring layer may be formed by a conductor (for example, a metal such as aluminum, copper, titanium, nickel, gold, or silver, or an alloy such as a silver-tin alloy) between a metal layer (such as a photosensitive resin such as a photosensitive epoxy, photosensitive resin, or the like), but is not limited to this. For example, the wiring layer may be formed by the following method. First, silicon oxide (SiO ｘ ), a dielectric layer made of a photosensitive resin or the like is formed. The dielectric layer made of silicon oxide can be formed by, for example, sputtering, vacuum deposition, or the like. The dielectric layer made of a photosensitive resin can be formed by applying the photosensitive resin to the sealing layer 36 by, for example, spin coating, dipping, roller blade, spray coating, slit coating, or the like. Next, wiring is formed on the dielectric layer using a conductor such as metal. Methods for forming the wiring include, for example, known semiconductor process techniques such as lithography processes such as photolithography (resist lithography), etching, and the like. Examples of such lithography processes include lithography processes using a positive resist material and lithography processes using a negative resist material.

[0185] In the seventh step, methods for separating (peeling) the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) from the support substrate include, but are not limited to, mechanical peeling using a tool with a sharp part after irradiating the release agent layer with light, peeling between the support substrate and the semiconductor substrate, etc. By irradiating the release agent layer with light from the support substrate side, the release agent layer is altered (for example, separated or decomposed) as described above, and then, for example, one of the substrates can be pulled up to easily separate the semiconductor substrate, etc. from the support substrate.

[0186] The light irradiation of the release agent layer does not necessarily have to be performed on the entire area of ​​the release agent layer. Even if there are areas irradiated with light and areas not irradiated with light, as long as the release ability of the release agent layer as a whole is sufficiently improved, the semiconductor substrate or the like can be separated from the support substrate by a slight external force, such as by pulling up the support substrate. The ratio and positional relationship of the areas irradiated with light and the areas not irradiated with light will vary depending on the type and specific composition of the adhesive used, the thickness of the adhesive layer, the thickness of the adhesive layer, the thickness of the release agent layer, the intensity of the light irradiated, etc., but the conditions may be set appropriately. Typically, the light irradiation dose for peeling is 50 to 3,000 mJ / cm ２ The irradiation time is appropriately determined depending on the wavelength and the irradiation amount.

[0187] As described above, the wavelength of the light used for peeling is preferably, for example, 250 to 600 nm, and more preferably 250 to 370 nm. More preferred wavelengths are 308 nm, 343 nm, 355 nm, 365 nm, or 532 nm. The amount of light required for peeling is an amount that can cause suitable alteration, such as decomposition, of resin X (more specifically, for example, novolac resin). The light used for peeling may be laser light or non-laser light emitted from a light source such as an ultraviolet lamp.

[0188] The substrate can be cleaned by spraying the cleaning composition onto the surface of a separated semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) or by immersing the separated semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) in the cleaning composition. The surface of a processed semiconductor substrate, etc. may also be cleaned using a removal tape, etc. As an example of substrate cleaning, an eighth step of cleaning the processed semiconductor substrate, etc. may be performed after the seventh step. The cleaning composition used for cleaning can be the same as that described above in the section (Method for producing a fan-out type semiconductor package (Third embodiment C)).

[0189] The constituent elements and methodological elements of the above-described steps of the method for manufacturing a processed semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) of the present invention may be modified in various ways without departing from the spirit of the present invention. The method for manufacturing a processed semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) of the present invention may include steps other than those described above.

[0190] An example of a method for manufacturing a processed semiconductor substrate or electronic device substrate according to the fourth embodiment D will be described with reference to the drawings. In the fourth embodiment D, of the laminates according to the second embodiment B, a laminate having a semiconductor substrate and a laminate having an electronic device substrate will be described separately. The case where a semiconductor substrate is used as the substrate will be described as a fourth embodiment D-1 of the fourth embodiment D, and the case where an electronic device substrate is used as the substrate will be described as a fourth embodiment D-2 of the fourth embodiment D.

[0191] An example of the fourth embodiment D-1 will be described with reference to FIGS. 2C to 2G. This example is an example of manufacturing a thinned semiconductor substrate. First, a laminate is prepared ( FIG. 2C ). The method for manufacturing this laminate is as described above. Next, a polishing device (not shown) is used to polish the surface of the semiconductor substrate 14 opposite to the surface in contact with the adhesive layer 13, thereby thinning the semiconductor substrate 14 ( FIG. 2D ). The thinned semiconductor substrate 14 may also be subjected to the formation of a through electrode or the like. Next, the release agent layer 11 is irradiated with light from the support substrate 12 side, and then the thinned semiconductor substrate 14 and the support substrate 12 are separated using a peeling device (not shown). This results in a thinned semiconductor substrate 14 ( FIG. 2F ). Residues of the adhesive layer 13 and the release agent layer 12 may remain on the thinned semiconductor substrate 14. Therefore, the thinned semiconductor substrate 14 can be cleaned using a cleaning composition to remove the residues of the adhesive layer 13 and the release agent layer 12 from the semiconductor substrate 14 ( FIG. 2G ).

[0192] An example of the fourth embodiment D-2 will be described using FIGS. 3D to 3H. This example is an example of manufacturing a thinned electronic device substrate. First, a laminate is prepared ( FIG. 3D ). The method for manufacturing this laminate is as described above. Next, as shown in FIG. 3E , for example, the encapsulation layer 36 of the laminate shown in FIG. 3D is polished to a thickness approximately equal to that of the semiconductor chip 35. Next, a wiring layer 38 may be formed on an electronic device substrate 37 consisting of the semiconductor chip 35 and the encapsulation layer 36 (see FIG. 3F ). As shown in FIG. 3G , the release agent layer 32 is irradiated with light (arrow) through the support substrate 31 to alter the release agent layer 32, thereby separating the electronic device substrate 37 from the support substrate 31. For example, after the separation step by irradiation shown in FIG. 3G , the adhesive layer 33 and the release agent layer 32 remain attached to the electronic device substrate 37, but the adhesive layer 33 and the release agent layer 32 can be removed using a cleaning composition. By removing the release agent layer and adhesive layer, a processed electronic device layer (electronic device substrate or electronic component having a wiring layer) as shown in FIG. 3H can be suitably obtained.

[0193] The present invention will be described in more detail below with reference to examples, but the present invention is not limited to the following examples. The apparatus used is as follows.

[0194] (1) Mixer: ARE-500, a planetary centrifugal mixer manufactured by Thinky Corporation (2) Vacuum lamination device: XBS300 manufactured by SUSS Microtec Co., Ltd. (3) Optical film thickness meter (film thickness measurement): F-50 manufactured by Filmetrics Inc. (4) Laser irradiation device: Lambda SX manufactured by Coherent Corporation (5) Stud-pull tester: Sebastian V manufactured by PhotoTechnica Co., Ltd.

[0195] [1] Preparation of Adhesive Composition [Preparation Example 1] 80 g of MQ resin (manufactured by Wacker Chemie) containing polysiloxane and vinyl groups, 2.52 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) with a viscosity of 100 mPa s, 5.89 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) with a viscosity of 70 mPa s, and 0.22 g of 1-ethynyl-1-cyclohexanol (manufactured by Wacker Chemie) were placed in a 600 mL stirring vessel for the stirrer, and the mixture was stirred for 5 minutes to obtain mixture (I). 0.147 g of platinum catalyst (manufactured by Wacker Chemie) and 5.81 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) with a viscosity of 1000 mPa s were added, and the mixture was stirred for 5 minutes to obtain mixture (II). 3.96 g of the mixture (II) obtained above was added to the mixture (I) and stirred for 5 minutes with a stirrer to obtain a mixture (III). Finally, the obtained mixture (III) was filtered through a 300 mesh nylon filter to obtain adhesive composition 1. The viscosity of the adhesive measured with a viscometer was 10,000 mPa s.

[0196] [2] Synthesis of Novolac Resin [Synthesis Example 1] 10.0 g of 2,2-dihydroxybiphenol, 4.19 g of 1-naphthalenealdehyde, 6.24 g of 1-pyrenecarboxaldehyde, 77 g of methanesulfonic acid, and 49.48 g of propylene glycol monomethyl ether acetate as a solvent were placed in a flask and stirred under reflux overnight under a nitrogen atmosphere. The resulting reaction mixture was allowed to cool and then diluted with 96 g of tetrahydrofuran. The resulting diluted solution was added dropwise to methanol to obtain a precipitate. The resulting precipitate was collected by filtration, washed with methanol, and dried at 60°C under reduced pressure to obtain a novolac resin. Measurement by the following method revealed that the weight-average molecular weight of the polymer novolac resin was 5,300. The weight average molecular weight was measured using a GPC apparatus (EcoSEC, HLC-8220GPC manufactured by Tosoh Corporation) and GPC columns (Shodex KF-803L, KF-802, and KF-801 manufactured by Showa Denko K.K., used in this order), at a column temperature of 40°C, using tetrahydrofuran as an eluent (elution solvent), at a flow rate (flow velocity) of 1.00 mL / min, and using polystyrene (manufactured by Sigma-Aldrich Co.) as a standard sample.

[0197] Synthesis Example 2: 7.4 g of tert-butoxystyrene, 7.38 g of 4-amyloxybenzaldehyde, and 10.0 g of propylene glycol monomethyl ether (as a solvent) were placed in a flask and stirred. After stirring, 10.0 g of N,N'-diphenyl-1,4-phenylenediamine, 1.1 g of methanesulfonic acid, and 31.1 g of propylene glycol monomethyl ether (as a solvent) were added and heated and stirred overnight at 110°C under a nitrogen atmosphere. Propylene glycol monomethyl ether acetate and pure water were added to the reaction solution and stirred. The organic layer was then separated and concentrated to obtain a novolac resin. The weight-average molecular weight of the polymer novolac resin was measured using the following method and found to be 1,200. The weight average molecular weight was measured using a GPC apparatus (EcoSEC, HLC-8220GPC manufactured by Tosoh Corporation) and GPC columns (Shodex KF-803L, KF-802, and KF-801 manufactured by Showa Denko K.K., used in this order), at a column temperature of 40°C, using tetrahydrofuran as an eluent (elution solvent), at a flow rate (flow velocity) of 1.00 mL / min, and using polystyrene (manufactured by Sigma-Aldrich Co.) as a standard sample.

[0198] Synthesis Example 3: A flask was charged with 10.0 g of carbazole, 7.30 g of 4-hydroxybenzaldehyde, 2.30 g of methanesulfonic acid, and 45.7 g of propylene glycol monomethyl ether acetate as a solvent, and the mixture was refluxed and stirred under a nitrogen atmosphere for 8 hours. The resulting reaction mixture was allowed to cool, and then the resulting reaction solution was added dropwise to a 1:1 water:methanol solution to obtain a precipitate. The resulting precipitate was collected by filtration, washed with methanol, and dried at 60°C under reduced pressure to obtain a novolac resin. Measurement by the following method revealed that the weight-average molecular weight of the polymer novolac resin was 10,130. The weight average molecular weight was measured using a GPC apparatus (EcoSEC, HLC-8220GPC manufactured by Tosoh Corporation) and GPC columns (Shodex KF-803L, KF-802, and KF-801 manufactured by Showa Denko K.K., used in this order), at a column temperature of 40°C, using tetrahydrofuran as an eluent (elution solvent), at a flow rate (flow velocity) of 1.00 mL / min, and using polystyrene (manufactured by Sigma-Aldrich Co.) as a standard sample.

[0199] Synthesis Example 4: 56.02 g of N-phenyl-1-naphthylamine, 50.00 g of 1-pyrenecarboxaldehyde, 6.67 g of 4-(trifluoromethyl)benzaldehyde, and 2.46 g of methanesulfonic acid were placed in a flask, and 86.36 g of 1,4-dioxane and 86.36 g of toluene were added thereto. The mixture was refluxed and stirred under a nitrogen atmosphere for 18 hours. The resulting reaction mixture was allowed to cool and then diluted with 96 g of tetrahydrofuran. The resulting diluted solution was added dropwise to methanol to obtain a precipitate. The resulting precipitate was collected by filtration, washed with methanol, and dried at 60°C under reduced pressure to obtain a novolac resin. Measurement by the following method revealed that the weight-average molecular weight of the polymer novolac resin was 1,100. The weight average molecular weight was measured using a GPC apparatus (EcoSEC, HLC-8220GPC manufactured by Tosoh Corporation) and GPC columns (Shodex KF-803L, KF-802, and KF-801 manufactured by Showa Denko K.K., used in this order), at a column temperature of 40°C, using tetrahydrofuran as an eluent (elution solvent), at a flow rate (flow velocity) of 1.00 mL / min, and using polystyrene (manufactured by Sigma-Aldrich Co.) as a standard sample.

[0200] [3] Preparation of Release Agent Composition [Preparation Example 3] 1.0 g of the novolak resin obtained in Synthesis Example 1 and 0.3 g of epoxy-modified novolak EOCN-104S (manufactured by Nippon Kayaku Co., Ltd.) as a crosslinking agent were dissolved in 8.7 g of propylene glycol monomethyl ether acetate in a reaction vessel, and the resulting solution was filtered using a polyethylene microfilter having a pore size of 0.2 μm, to obtain Release Agent Composition 1.

[0201] Preparation Example 4 1.0 g of the novolak resin obtained in Synthesis Example 2 and 0.3 g of epoxy-modified novolak EOCN-104S (manufactured by Nippon Kayaku Co., Ltd.) as a crosslinking agent were dissolved in 8.7 g of propylene glycol monomethyl ether acetate in a reaction vessel, and the resulting solution was filtered using a polyethylene microfilter having a pore size of 0.2 μm, to obtain release agent composition 2.

[0202] Preparation Example 5 1.30 g of the novolak resin obtained in Synthesis Example 1 and 0.3 g of GT-401 (manufactured by Daicel Corporation) as a crosslinking agent were dissolved in 8.7 g of propylene glycol monomethyl ether acetate in a reaction vessel, and the resulting solution was filtered using a polyethylene microfilter having a pore size of 0.2 μm, to obtain release agent composition 3.

[0203] Preparation Example 6 1.0 g of the novolak resin obtained in Synthesis Example 2 and 0.3 g of GT-401 (manufactured by Daicel Corporation) as a crosslinking agent were dissolved in 8.7 g of propylene glycol monomethyl ether acetate in a reaction vessel, and the resulting solution was filtered using a polyethylene microfilter having a pore size of 0.2 μm, to obtain release agent composition 4.

[0204] Preparation Example 7 1.30 g of the novolak resin obtained in Synthesis Example 1 and 0.3 g of YH-434L (manufactured by Nippon Steel Chemical & Material Co., Ltd.) as a crosslinking agent were dissolved in 8.7 g of propylene glycol monomethyl ether acetate in a reaction vessel, and the resulting solution was filtered using a polyethylene microfilter having a pore size of 0.2 μm, to obtain release agent composition 5.

[0205] [Preparation Example 8] 1.30 g of the novolak resin obtained in Synthesis Example 2 and 0.3 g of YH-434L (manufactured by Nippon Steel Chemical & Material Co., Ltd.) as a crosslinking agent were dissolved in 8.7 g of propylene glycol monomethyl ether acetate in a reaction vessel, and the resulting solution was filtered using a polyethylene microfilter having a pore size of 0.2 μm, to obtain release agent composition 6.

[0206] Preparation Example 9 1.30 g of the novolak resin obtained in Synthesis Example 3 and 0.3 g of HP-4700 (manufactured by DIC Corporation) as a crosslinking agent were dissolved in 8.7 g of propylene glycol monomethyl ether acetate in a reaction vessel, and the resulting solution was filtered using a polyethylene microfilter having a pore size of 0.2 μm, to obtain release agent composition 7.

[0207] [Preparation Example 10] 3.6 g of the novolak resin obtained in Synthesis Example 1, 0.72 g of 3,3',5,5'-tetrakis(methoxymethyl)-[1,1'-biphenyl]-4,4'-diol as a crosslinking agent, and 0.1 g of pyridinium p-toluenesulfonate were dissolved in 95.58 g of propylene glycol monomethyl ether acetate, and the resulting solution was filtered using a polyethylene microfilter having a pore size of 0.2 µm, to obtain release agent composition 8.

[0208] [4] Production of Laminate [Example 1-1] The release agent composition 1 obtained in Preparation Example 3 was spin-coated onto a 301 mm glass wafer (EAGLE-XG, Corning, thickness 700 μm) serving as the carrier-side substrate, and baked on a hot plate at 250°C for 30 minutes to form a release agent coating layer on the glass wafer serving as the support substrate such that the film thickness in the final laminate would be 500 nm. The adhesive composition 1 was spin-coated onto a silicon wafer serving as the device wafer to form an adhesive coating layer-1 such that the film thickness in the final laminate would be 60 μm. Then, using a bonding device, the device wafer with the adhesive coating layer-1 formed thereon and the carrier-side support substrate with the release agent coating layer formed thereon were bonded together so that the adhesive coating layer-1 and the release agent coating layer were sandwiched between them, followed by post-heat treatment at 200°C for 10 minutes to produce a laminate. The bonding was performed at a temperature of 23°C and a reduced pressure of 1,500 Pa. The required number of laminates were produced. The silicon wafer of the obtained laminate was irradiated with a laser having a wavelength of 308 nm from the glass wafer side of the laminate to the peeling layer at an intensity of 250 mJ / cm using a laser irradiation device. ２ The lowest irradiation dose at which peeling occurred was defined as the optimal irradiation dose. Then, a laser with a wavelength of 308 nm was irradiated onto the entire surface of the release agent layer from the glass wafer side of the laminate at the optimal irradiation dose, and the support substrate was manually lifted to confirm whether peeling was possible. The results are shown in Table 1.

[0209] [Examples 1-2 to 1-7] Films were formed on substrates in the same manner as in Example 1-1, except that release agent composition 1 obtained in Preparation Example 3 was replaced with release agent compositions 2 to 7 obtained in Preparation Examples 4 to 9, respectively. The obtained laminates of Examples 1-2 to 1-7 were checked for peelability in the same manner as in Example 1-1. The results are shown in Table 1.

[0210] Comparative Example 1-1 A film was formed on a substrate in the same manner as in Example 1-1, except that the release agent composition 8 obtained in Preparation Example 10 was used instead of the release agent composition 1 obtained in Preparation Example 3. The obtained laminate of Comparative Example 1-1 was checked for peelability in the same manner as in Example 1-1. The results are shown in Table 1.

[0211]

[0212] [5] Adhesion Evaluation [Example 2-1] The release agent composition 1 obtained in Preparation Example 3 was spin-coated onto a 4 × 4 cm glass chip (Corning SG10.7, manufactured by Corning Incorporated, thickness 1100 μm) and baked on a hot plate at 250°C for 30 minutes to form a release agent layer on the glass wafer, which served as a support substrate, such that the film thickness in the final laminate was 500 nm. The resulting release agent layer was cut using a cutter to form 100 squares. Tape (polyester adhesive tape, manufactured by Nitto Denko Corporation) was attached to the cut release agent layer, and the tape was peeled off from the release agent layer. The number of squares remaining after peeling was counted to confirm adhesion. The results are shown in Table 2. Adhesion was calculated as the number of squares of the release agent layer remaining / 100.

[0213] Examples 2-2 to 2-6 Films were formed on substrates in the same manner as in Example 2-1, except that release agent composition 1 obtained in Preparation Example 3 in Example 1-1 was replaced with release agent compositions 2 to 6 obtained in Preparation Examples 4 to 8, respectively. The obtained laminates of Examples 2-2 to 2-6 were examined for peelability in the same manner as in Example 2-1. The results are shown in Table 2.

[0214]

[0215] Example 3-1 The release agent composition 1 obtained in Preparation Example 3 was spin-coated onto a 4 x 4 cm glass chip (Corning SG10.7, Corning Incorporated, thickness 1100 μm) and baked on a hot plate at 250°C for 30 minutes to form a release agent layer on the glass wafer support substrate such that the film thickness in the final laminate was 500 nm. The sample was then cut to a size of 1 x 1 cm, and a PhotoTechnica backing plate and a φ2.7 mm aluminum stud pin with epoxy resin were attached as a jig, followed by curing at 150°C / 1 h. The cured sample was subjected to adhesion measurement using a Sebastian V (PhotoTechnica Corporation). The substrate was also observed after measurement, and the peel interface was also investigated. The results are shown in Table 3.

[0216] Example 3-2: The release agent composition 7 obtained in Preparation Example 9 was spin-coated onto a 4 x 4 cm glass chip (Corning SG10.7, Corning Incorporated, thickness 1100 μm) and baked on a hot plate at 250°C for 30 minutes to form a release agent layer on the glass wafer support substrate such that the film thickness in the final laminate was 300 nm. The sample was then cut to a size of 1 x 1 cm, and a PhotoTechnica backing plate and a φ2.7 mm aluminum stud pin with epoxy resin were attached as a jig and cured at 150°C / 1 h. The cured sample was subjected to adhesion measurement using a Sebastian V (PhotoTechnica Corporation). The substrate was also observed after measurement, and the peel interface was also investigated. The results are shown in Table 3.

[0217] Comparative Example 3-1: The release agent composition 8 obtained in Preparation Example 10 was spin-coated onto a 4 x 4 cm glass chip (Corning SG10.7, Corning Incorporated, thickness 1100 μm) and baked on a hot plate at 250°C for 30 minutes to form a release agent layer on the glass wafer support substrate so that the film thickness of the final laminate was 200 nm. The sample was then cut to a size of 1 x 1 cm, and a PhotoTechnica backing plate and a φ2.7 mm epoxy resin-tipped aluminum stud pin were attached to a jig and cured at 150°C / 1 h. The cured sample was subjected to adhesion measurement using a Sebastian V (PhotoTechnica Corporation). The substrate was also observed after measurement, and the peel interface was also investigated. The results are shown in Table 3.

[0218] As shown in Table 3, in Examples 3-1 and 3-2, "cohesive failure of the epoxy adhesive" was observed at the peel interface. In Comparative Example 3-1, peeling occurred between the substrate and the film of the release agent composition when the sample was cut into a 1 × 1 cm piece, so it was not possible to measure the adhesion strength or observe the peel interface.

[0219] In Examples 3-1 and 3-2, "cohesive failure of the epoxy adhesive" was observed at the peel interface, which indicates that peeling did not occur at the interface between the substrate and the release agent layer and that the adhesion between the substrate and the release agent layer was quite high. On the other hand, in Comparative Example 3-1, peeling occurred between the substrate and the film of the release agent composition when cut into 1 x 1 cm pieces, which indicates that the adhesion was very weak.

[0220] REFERENCE SIGNS LIST 1 Support substrate 2 Release agent layer 3 Metal layer 4 Wiring layer 5 Semiconductor chip 6 Sealing layer 7 Sealing structure 11 Support substrate 12 Release agent layer 13 Adhesive layer 14 Semiconductor substrate 31 Support substrate 32 Release agent layer 33 Adhesive layer 35 Semiconductor chip 36 Sealing layer 37 Electronic device substrate 38 Wiring layer

Claims

a light-transmitting support substrate; a release agent layer for light irradiation peeling; a metal layer; a wiring layer, and a laminate formed by laminating the wiring layer and the laminate in this order, the laminate comprising a release agent composition for light irradiation peeling for forming the release agent layer for light irradiation peeling, A release agent composition for light irradiation stripping, comprising a resin having at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring, an epoxy-based crosslinking agent, and a solvent. 　 a light-transmitting support substrate; a release agent layer for light irradiation peeling; an adhesive layer; A release agent composition for light irradiation peeling for forming a release agent layer for light irradiation peeling in a laminate in which a semiconductor substrate or an electronic device substrate is laminated in this order, the composition comprising: A release agent composition for light irradiation stripping, comprising a resin having at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring, an epoxy-based crosslinking agent having no siloxane skeleton, and a solvent.

3. The stripping composition for light irradiation stripping according to claim 1, wherein the resin having at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring is a novolak resin. 　 The stripping composition for light irradiation stripping according to claim 3, wherein the novolak resin contains at least one of a structural unit represented by the following formula (C1-1), a structural unit represented by the following formula (C1-2), and a structural unit represented by the following formula (C1-3): (In the formula, C １ represents a group derived from an aromatic compound containing a nitrogen atom. C ２ represents a group containing a tertiary or quaternary carbon atom and having at least one kind selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring in a side chain, or represents a methylene group. C ３ represents a group derived from an aliphatic polycyclic compound. C ４ represents a group derived from phenol, a group derived from bisphenol, a group derived from naphthol, a group derived from biphenyl, or a group derived from biphenol. C ５ represents a single bond or a group having a structure derived from styrene. In formula (C1-1), C １ , C ２ and C ５ At least one of the above has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring. In formula (C1-2), C １ , C ３ and C ５ At least one of the above has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring. In formula (C1-3), C ２ , C ４ and C ５ At least one of the above has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring. 　 The stripping composition for light irradiation stripping according to claim 4, wherein the novolak resin contains, as the structural unit represented by formula (C1-1), at least one of a structural unit represented by the following formula (C1-1-1) and a structural unit represented by the following formula (C1-1-2): (In formula (C1-1-1) and formula (C1-1-2), R ９０１ and R ９０２ represents a substituent substituted on the ring, and each independently represents a halogen atom, a nitro group, a cyano group, an amino group, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. R ９０３ represents a hydrogen atom, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. R ９０４ represents a hydrogen atom, an optionally substituted aryl group, or an optionally substituted heteroaryl group. R ９０５ represents an optionally substituted alkyl group, an optionally substituted aryl group, or an optionally substituted heteroaryl group. R ９０４ and R ９０５ may be bonded to each other to form a divalent group. Ar ９０１ and Ar ９０２ each independently represents an aromatic ring. X １ and X ２ each independently represents a hydroxy group or a carboxy group. Z １ represents a single bond or a group having a structure derived from styrene. h １ and h ２ each independently represents an integer of 0 to 3. k １ and k ２ each independently represents an integer of 0 to 3. h １ Tok １ The sum of is 3 or less. ２ Tok ２ The sum of the above is 3 or less. n represents an integer of 1 or 2. However, the structural unit represented by formula (C1-1-1) and the structural unit represented by formula (C1-1-2) each independently have at least one of a hydroxy group directly bonded to an aromatic ring and a carboxy group directly bonded to an aromatic ring.

5. The stripping composition for light irradiation stripping according to claim 4, wherein the novolak resin contains a structural unit represented by the following formula (C1-3-1) as the structural unit represented by the formula (C1-3): (In formula (C1-3-1), R ８０１ represents a substituent substituted on the ring, and each independently represents a halogen atom, a nitro group, a cyano group, an amino group, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. R ８０２ represents a hydrogen atom, an optionally substituted aryl group, or an optionally substituted heteroaryl group. R ８０３ represents a hydrogen atom, an optionally substituted alkyl group, an optionally substituted aryl group, or an optionally substituted heteroaryl group. R ８０２ and R ８０３ may be bonded to each other to form a divalent group. Ar ８０１ represents a benzene ring, a naphthalene ring, or a biphenyl structure. X １１ represents a hydroxy group or a carboxy group. Z １ represents a single bond or a group having a structure derived from styrene. h １１ each independently represents an integer of 0 to 4. k １１ each independently represents an integer of 0 to 4. Ar ８０１ When is a benzene ring, h １１ Tok １１ The sum of Ar is 4 or less, ８０１ When is a naphthalene ring, h １１ Tok １１ The sum of Ar is 6 or less, ８０１ When is a biphenyl structure, h １１ Tok １１ The sum of the above is 8 or less. However, the structural unit represented by formula (C1-3-1) has at least one of a hydroxy group directly bonded to the aromatic ring and a carboxy group directly bonded to the aromatic ring. a light-transmitting support substrate; a release agent layer for light irradiation peeling; a metal layer; a wiring layer, and a laminated body in this order, A laminate, wherein the release agent layer for peeling off by light irradiation is formed from the release agent composition for peeling off by light irradiation according to claim 1 . 　 a light-transmitting support substrate; a release agent layer for light irradiation peeling; an adhesive layer; A laminate in which a semiconductor substrate or an electronic device substrate is laminated in this order, A laminate, wherein the release agent layer for peeling off by light irradiation is formed from the release agent composition for peeling off by light irradiation according to claim 2 . 　 A method for manufacturing a fan-out type semiconductor package, comprising:

8. The laminate according to claim 7, wherein a plurality of semiconductor chips are mounted on the wiring layer and a sealing layer for sealing the semiconductor chips is formed on the wiring layer, a step of separating the wiring layer from the support substrate by irradiating light from the support substrate side; removing the metal layer on the wiring layer to obtain a sealing structure having the semiconductor chip, the wiring layer, and the sealing layer; and a step of obtaining individual semiconductor packages by dividing the sealing structure. 　 The laminate in which the sealing layer is formed on the wiring layer is A step of forming a release agent layer for light irradiation peeling on a light-transmitting support substrate; forming a metal layer on the release agent layer for light irradiation peeling; forming a wiring layer on the metal layer; Mounting a plurality of semiconductor chips on the wiring layer; and a step of forming a sealing layer on the wiring layer to seal the semiconductor chip, the method for manufacturing a fan-out type semiconductor package according to claim 9 .

1. A method for manufacturing a processed semiconductor substrate or electronic device substrate, comprising: a processing step in which the semiconductor substrate or the electronic device substrate of the laminate according to claim 8 is processed; a separation step of separating the semiconductor substrate or the electronic device substrate processed by the processing step from the support substrate; 1. A method for producing a processed semiconductor substrate or electronic device substrate, comprising: 　 The method for producing a processed semiconductor substrate or electronic device substrate according to claim 11 , wherein the separating step includes a step of irradiating the laminate with light from the support substrate side.

Images