Substrate treatment apparatus

Abstract

The present invention relates to a substrate treatment apparatus, specifically a substrate treatment apparatus that deposits a thin film onto a substrate using a hollow cathode plasma (HCP) method. The substrate treatment apparatus according to an embodiment of the present invention comprises: a process chamber that provides a process treatment space for a process involving a substrate; and a plasma generation unit that is provided in the process chamber and converts a process gas into a process material in a plasma state. The plasma generation unit includes: a plasma generation body that provides a first diffusion space for diffusion of the process gas; a through-hole which is formed in one side surface of the plasma generation body and through which the diffused process gas passes; and a plasma conversion tube that is provided in the through-hole and converts the process gas into the process material in the plasma state.

Description

substrate processing device

[0001] The present invention relates to a substrate processing device, and more particularly, to a substrate processing device that deposits a thin film on a substrate using a hollow cathode plasma (HCP) method.

[0002] Chemical vapor deposition (CVD) or atomic layer deposition (ALD) can be used to deposit a thin film on a substrate. In the case of chemical vapor deposition or atomic layer deposition, a thin film can be formed by a source gas causing a chemical reaction on the surface of the substrate. In particular, in the case of atomic layer deposition, since a single layer of the source gas attached to the surface of the substrate forms a thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom.

[0003] To expand the processing temperature range, plasma-enhanced chemical vapor deposition (PECVD) or plasma-enhanced atomic layer deposition (PEALD) can be used. Because PECVD and PEALD can be processed at lower temperatures than chemical vapor deposition and ALD, the physical properties of the thin film can be improved.

[0004] Thin films can also be used to form interlayer insulating films. However, if the gaps between wires are small, proper thin film formation may not occur due to the deposition material not easily penetrating the gaps. For example, if the gap entrance is narrow, the film material formed around the entrance may prevent the deposition material from penetrating into the gap, resulting in the formation of a void.

[0005] Therefore, there is a need for an invention that enables the gap to be filled by allowing the deposition material to penetrate into the inside of the gap.

[0006] The problem to be solved by the present invention is to provide a substrate processing device that deposits a thin film on a substrate using a hollow cathode plasma (HCP) method.

[0007] The objects of the present invention are not limited to the objects mentioned above, and other objects not mentioned will be clearly understood by those skilled in the art from the description below.

[0008] In order to achieve the above object, a substrate processing device according to an embodiment of the present invention includes a process chamber providing a process processing space for a substrate process, and a plasma generating unit provided in the process chamber and converting a process gas into a process material in a plasma state, wherein the plasma generating unit includes a plasma generating body providing a first diffusion space for diffusion of the process gas, a through hole formed on one side of the plasma generating body and allowing the diffused process gas to pass through, and a plasma conversion tube provided in the through hole and converting the process gas into the process material in a plasma state.

[0009] The above plasma conversion tube is detachable from the above through hole.

[0010] The above plasma conversion tube is provided with aluminum material.

[0011] The surface of the above plasma conversion tube has screw threads formed.

[0012] The above plasma conversion tube includes an expansion section whose diameter gradually increases in the direction of movement of the process gas.

[0013] The above-mentioned expansion section increases in diameter in a cone or trumpet shape.

[0014] When there are multiple expansion sections, the diameter increase ratio of each of the multiple expansion sections gradually increases along the direction of movement of the process gas.

[0015] When there are multiple expansion sections, the diameter increase ratio of each of the multiple expansion sections is formed to be the same.

[0016] The gas inlet of the above plasma conversion tube is provided in a circular or polygonal shape.

[0017] The plasma generating unit includes a plurality of guide rings that are formed in a concentric shape and protrude from one side of the plasma generating body in which the gas outlet of the plasma conversion tube is formed to guide the process gas or process material.

[0018] The plasma conversion tube is provided in multiple numbers, and the multiple plasma conversion tubes are arranged in a concentric shape in an area on one side of the plasma generating body where the guide ring is not arranged.

[0019] Each of the plurality of guide rings has a parallel guide surface parallel to the direction of movement of the process material.

[0020] Each of the plurality of guide rings has an inclined guide surface inclined in the direction of movement of the process material.

[0021] The above through holes and the plasma conversion tubes are each provided in multiple numbers, and the first plasma conversion region of the plasma generating unit includes a first through hole into which a plasma conversion tube of a first shape can be coupled, and the second plasma conversion region of the plasma generating unit includes a second through hole into which a plasma conversion tube of a second shape can be coupled.

[0022] The first plasma conversion region corresponds to the central region of the plasma generating unit, and the second plasma conversion region corresponds to the edge region of the plasma generating unit surrounding the first plasma conversion region.

[0023] The plasma generator further includes a process material supply unit that is disposed below the plasma generator and supplies process gas or process material supplied from the plasma generator to the substrate, and the plasma conversion tube connects the first diffusion space and the process material supply unit.

[0024] The above process material supply unit includes a second diffusion space provided for diffusion of process gas or process material.

[0025] The above process material supply unit generates process materials using a capacitively coupled plasma (CCP) method.

[0026] The above plasma generating unit converts process gas into a plasma state using a hollow cathode plasma (HCP) method.

[0027] Specific details of other embodiments are included in the detailed description and drawings.

[0028] According to the substrate processing device according to the embodiment of the present invention as described above, since a deposition material is filled in a gap formed in a substrate to form a thin film, there is an advantage in that an empty space is prevented from being formed in the gap.

[0029] Additionally, there is an advantage in that the thin film deposition efficiency is improved as the through holes are formed in a shape that enhances the hollow cathode effect.

[0030] The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

[0031] FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention.

[0032] Figure 2 is a drawing showing that the substrate support has moved into the process processing space.

[0033] Figure 3 is a perspective view of a plasma conversion tube.

[0034] Figure 4 is a cross-sectional view of a plasma conversion tube.

[0035] Fig. 5 is a drawing showing a plasma conversion tube having a trumpet-shaped expansion section.

[0036] Figure 6 is a drawing showing a plasma conversion tube with threads formed thereon.

[0037] Figure 7 is a drawing showing a plasma conversion tube whose entire section is an extension section.

[0038] FIG. 8 is a drawing showing a plasma conversion tube including multiple expansion sections having different diameter increase ratios.

[0039] FIG. 9 is a drawing showing a plasma conversion tube including multiple expansion sections having the same diameter increase ratio.

[0040] Figure 10 is a drawing showing a gas inlet of a plasma conversion tube.

[0041] Figure 11 is a plan view of the plasma generating unit.

[0042] Figure 12 is a cross-sectional view of the plasma generating unit.

[0043] Fig. 13 is a cross-sectional side view of a plasma generator equipped with a guide ring having an inclined guide surface.

[0044] Fig. 14 is a cross-sectional side view of a plasma generator equipped with a guide ring having a parallel guide surface and an inclined guide surface.

[0045] Fig. 15 is a drawing showing a plasma generating unit having multiple plasma conversion regions.

[0046] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described in detail below together with the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms. These embodiments are provided only to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

[0047] Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used in their common sense to those of ordinary skill in the art to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0048] FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention, and FIG. 2 is a drawing showing a substrate support part moved into a process processing space.

[0049] Referring to FIGS. 1 and 2, a substrate processing device (10) according to an embodiment of the present invention is configured to include a process chamber (100), a substrate support unit (200), an elevation unit (300), a gas supply unit (400), a gas pressurization unit (500), a plasma generation unit (600), a process material supply unit (700), a first power supply unit (810), a second power supply unit (820), and a control unit (900).

[0050] A substrate processing device (10) according to an embodiment of the present invention can deposit a thin film on a substrate (W). For example, the substrate processing device (10) can deposit a thin film on the substrate (W) using plasma enhanced atomic layer deposition (PEALD).

[0051] The process chamber (100) may include a chamber body (110) and a chamber lid (120). The chamber body (110) provides a space for accommodating various components for processing a substrate (W), and the chamber lid (120) may seal an upper opening of the chamber body (110). The chamber lid (120) may support a plasma generation unit (600) and a process material supply unit (700). For example, the plasma generation unit (600) and the process material supply unit (700) may be stacked and provided on the chamber lid (120).

[0052] The process chamber (100) can provide a process processing space (SP1) and a substrate placement space (SP2). The process processing space (SP1) represents a space for processing a substrate (W), and the substrate placement space (SP2) represents a space for placement and movement of the substrate (W). The process processing space (SP1) and the substrate placement space (SP2) can be formed by combining the chamber body (110) and the chamber lid (120). Among the internal spaces of the process chamber (100), an upper space may correspond to the process processing space (SP1), and a lower space may correspond to the substrate placement space (SP2).

[0053] A substrate entrance (130) for entrance and exit of a substrate (W) may be formed on one side of the process chamber (100). For example, the substrate entrance (130) may be formed on one side of the chamber body (110). The substrate (W) may be introduced into or taken out of the process chamber (100) through the substrate entrance (130).

[0054] The process chamber (100) may be equipped with a shutter (140). The shutter (140) may open or close the substrate entrance (130). When the shutter (140) opens the substrate entrance (130), the substrate (W) may be loaded or unloaded through the substrate entrance (130). When a process for the substrate (W) is in progress, the shutter (140) may close the substrate entrance (130) to block the interior of the process chamber (100) from the exterior.

[0055] The substrate support (200) may have a mounting surface on which a substrate (W) can be mounted. A process may be performed on the substrate (W) mounted on the mounting surface of the substrate support (200). The substrate support (200) may heat the substrate (W). To this end, a heater (not shown) may be provided inside the substrate support (200). Heat emitted from the heater may be transferred to the substrate (W) through the body of the substrate support (200). The heater may serve as an electrode for forming an electric field. As described below, when RF power is supplied to the process material supply unit (700), an electric field may be formed between the process material supply unit (700) and the heater.

[0056] The substrate support (200) can be raised to a process processing space (SP1) where a process for the substrate (W) is performed, or lowered to a substrate placement space (SP2) where placement and movement of the substrate (W) are performed. The elevating unit (300) can generate a driving force to move the substrate support (200) in the up and down direction. Fig. 1 illustrates the substrate support (200) being lowered to the substrate placement space (SP2), and Fig. 2 illustrates the substrate support (200) being raised to the process processing space (SP1).

[0057] The gas supply unit (400) serves to supply process gas to the process chamber (100). Specifically, the gas supply unit (400) can supply process gas to the plasma generation unit (600). To this end, the gas supply unit (400) can be connected to the plasma generation unit (600) via a gas supply line (410).

[0058] The gas pressurization unit (500) can pressurize the process gas and supply it to the gas supply unit (400). A plurality of gas transfer lines (510) can be connected to the gas pressurization unit (500). Different process gases can be transported through the plurality of gas transfer lines (510). The gas pressurization unit (500) can individually pressurize the process gases transported through the plurality of gas transfer lines (510) and supply them to the gas supply unit (400). The process gas can be injected into the gas supply unit (400) at a predetermined pressure. Accordingly, the gas supply unit (400) can supply the process gas to the plasma generation unit (600) at a uniform pressure.

[0059] The gas pressurization unit (500) may include a gas pressurization tank (520). A plurality of gas pressurization tanks (520) may be provided. For example, a gas pressurization tank (520) may be provided for each of a plurality of gas transfer lines (510). The gas pressurization tank (520) may pressurize and discharge process gas injected through the gas transfer line (510).

[0060] The plasma generator (600) can convert process gas into process material in a plasma state. The process material may include radicals, ions, and electrons.

[0061] A plasma generation unit (600) may be provided in the process chamber (100). Specifically, the plasma generation unit (600) may be provided in the chamber lid (120) and may convert the process gas supplied from the gas supply unit (400) into a plasma state.

[0062] The plasma generation unit (600) may include a plasma generation body (610). The plasma generation body (610) may provide a first diffusion space (611) for diffusion of a process gas. The first diffusion space (611) may be provided for diffusion of a process gas supplied through a gas supply line (410). The process gas supplied from the gas supply unit (400) may be diffused in the first diffusion space (611).

[0063] A through hole (612) may be formed on one side of the plasma generating body (610) to connect the first diffusion space (611) and the process material supply unit (700). The through hole (612) may allow the process gas diffused in the first diffusion space (611) to pass through. The process gas may be supplied to the process material supply unit (700) by passing through the through hole (612).

[0064] In the present invention, the plasma generation unit (600) can convert the process gas into a plasma state using a hollow cathode plasma (HCP) method. The process gas moving from the first diffusion space (611) toward the process material supply unit (700) can be converted into a plasma state in the through hole (612) by the RF power supplied to the plasma generation unit (600). As described below, when RF power is supplied from the first power supply unit (810) to the plasma generation unit (600), an electric field can be formed in the through hole (612). The process gas passing through the through hole (612) can be converted into a plasma state by the electric field formed inside the through hole (612).

[0065] The plasma generation unit (600) may be arranged above the process material supply unit (700). The plasma generation unit (600) may supply the process gas injected into the process chamber (100) to the process material supply unit (700), or may convert the process gas injected into the process chamber (100) into a plasma state and supply it to the process material supply unit (700). The plasma conversion by the plasma generation unit (600) may be selectively performed. When RF power is not supplied to the plasma generation unit (600), the plasma generation unit (600) may supply the process gas to the process material supply unit (700), and when RF power is supplied to the plasma generation unit (600), the plasma generation unit (600) may supply the process material generated by converting the process gas into a plasma state to the process material supply unit (700).

[0066] The process material supply unit (700) is arranged below the plasma generation unit (600) and serves to supply the process gas or process material supplied from the plasma generation unit (600) to the substrate (W). The process material supply unit (700) can supply the process gas or process material in a uniform distribution over the entire surface area of ​​the substrate (W).

[0067] In the present invention, the process gas may include a source gas, a source purge gas, a reaction gas, and a reaction purge gas. The source gas, the source purge gas, the reaction gas, and the reaction purge gas may be sequentially supplied from the process material supply unit (700), or at least some of them may be supplied simultaneously. The source gas and the reaction gas may collide with each other and react after being supplied from the process material supply unit (700). Then, the source gas activated by the reaction gas may contact the substrate (W) to perform a process treatment on the substrate (W). For example, the activated source gas may be deposited as a thin film on the substrate (W). Here, the reaction gas may be converted into a process material in a plasma state and react with the source gas. The plasma generation unit (600) described above may convert the reaction gas into a process material and supply it to the process material supply unit (700). As the process material supply unit (700) supplies the process material to the substrate (W), deposition of a thin film may be performed.

[0068] The process material supply unit (700) may include a second diffusion space (710) and a supply hole (720). The second diffusion space (710) may be provided for the diffusion of a process gas or process material. The process gas or process material supplied from the plasma generation unit (600) may be diffused in the second diffusion space (710).

[0069] The supply hole (720) can connect the second diffusion space (710) and the process processing space (SP1). The supply hole (720) can be formed toward the substrate (W). The process gas or process material diffused in the second diffusion space (710) can pass through the supply hole (720) and be supplied to the substrate (W).

[0070] The first power supply unit (810) can supply RF power to the plasma generation unit (600). When RF power is supplied to the plasma generation unit (600), an electric field is formed in the through hole (612), and the process gas passing through the through hole (612) can be converted into a plasma state. The process material generated in the plasma generation unit (600) can be supplied to the substrate (W) from the process material supply unit (700) and used for deposition of a thin film.

[0071] The second power supply unit (820) can supply RF power to the process material supply unit (700). The process material supply unit (700) can generate the process material using a capacitively coupled plasma (CCP) method. The process material supply unit (700) may have a separate electrode plate (not shown) that receives RF power, or may function as an electrode that receives RF power on its own. As described above, the substrate support unit (200) may include a heater that functions as an electrode. When RF power is supplied to the process material supply unit (700), an electric field may be formed between the process material supply unit (700) and the heater of the substrate support unit (200). The process gas introduced into the process chamber (100) is converted into a plasma state by the electric field formed by the supply of RF power, thereby generating the process material, and the process material may react with the surface of the substrate (W) to perform a process treatment on the substrate (W).

[0072] The second power supply unit (820) can supply RF power to the process material supply unit (700) to convert the process gas for deposition of a thin film on the substrate (W) into a plasma state. The process gas injected into the process treatment space (SP1) is converted into a plasma state by an electric field formed between the process material supply unit (700) and the substrate support unit (200), and the process material generated by this conversion can be used for deposition of a thin film on the substrate (W).

[0073] The process chamber (100) may be equipped with a gas port (150). The gas port (150) may be disposed on the inner lower surface of the chamber body (110). For example, the gas port (150) may be disposed in an area vertically overlapping the substrate support (200) to effectively discharge process byproducts. Meanwhile, the gas port (150) being disposed on the inner lower surface of the chamber body (110) is exemplary, and according to some embodiments of the present invention, the gas port (150) may be disposed on the inner side surface of the chamber body (110). For example, when the substrate support (200) is raised to the process processing space (SP1), the gas port (150) may be disposed in an area between the substrate support (200) and the process material supply unit (700). Hereinafter, the gas port (150) disposed on the inner lower surface of the chamber body (110) will be mainly described.

[0074] The gas port (150) may provide an exhaust path for process byproducts. Here, the process byproducts may include all substances that must be exhausted from the process chamber (100), such as remaining gases among the process gases supplied to the process chamber (100) that are not used for forming a thin film. For example, the process byproducts may include source gas, reaction gas, source purge gas, and reaction purge gas.

[0075] An exhaust line (160) may be connected to the gas port (150). The exhaust line (160) may provide a transport path for process byproducts introduced through the gas port (150). A pressure pump (170) may be provided in the exhaust line (160). The pressure pump (170) may pressurize the internal space of the exhaust line (160) so that the process byproducts introduced into the gas port (150) may be transported through the exhaust line (160). The process byproducts transported through the exhaust line (160) may be discharged from the process chamber (100).

[0076] The control unit (900) can perform overall control of the substrate processing device (10). For example, the control unit (900) can operate the shutter (140) to open and close the substrate entrance (130), or control the lifting unit (300) to move the substrate support unit (200). In addition, the control unit (900) can control the gas supply unit (400) to supply the process gas to the process chamber (100). At least one process gas selected from among a source gas, a source purge gas, a reaction gas, and a reaction purge gas can be supplied to the process chamber (100) under the control of the control unit (900).

[0077] The control unit (900) can also control the supply of RF power by the first power supply unit (810) and the second power supply unit (820). The control unit (900) can individually control the first power supply unit (810) and the second power supply unit (820). For example, the control unit (900) can individually select and apply the power amount and power supply time of the first power supply unit (810) and the power amount and power supply time of the second power supply unit (820).

[0078] Fig. 3 is a perspective view of a plasma conversion tube, Fig. 4 is a cross-sectional view of a plasma conversion tube, and Fig. 5 is a drawing showing a plasma conversion tube having a trumpet-shaped expansion section.

[0079] Referring to FIGS. 3 and 4, the plasma conversion tube (620) may be provided in the form of a tube having a movement path of the process gas.

[0080] The plasma generation unit (600) may include a plasma conversion tube (620). The plasma conversion tube (620) may be provided in the through hole (612) to convert a process gas into a process material in a plasma state. The plasma conversion tube (620) may connect the first diffusion space (611) of the plasma generation unit (600) and the process material supply unit (700). Accordingly, the plasma conversion tube (620) may convert the process gas diffused and supplied in the first diffusion space (611) into a plasma state, and supply the process material generated in this process to the process material supply unit (700).

[0081] As described above, when RF power is supplied from the first power supply unit (810) to the plasma generation unit (600), an electric field may be formed in the plasma conversion tube (620) provided in the through hole (612). For example, the plasma conversion tube (620) may be provided with an aluminum material, similar to the plasma generation body (610) of the plasma generation unit (600). That is, the plasma generation body (610) and the plasma conversion tube (620) may be electrically connected. Accordingly, the process gas passing through the plasma conversion tube (620) may be converted into a plasma state by the electric field formed inside the plasma conversion tube (620).

[0082] Meanwhile, according to some embodiments of the present invention, the materials of the plasma generating body and the plasma conversion tube (620) may be different. For example, the material of the plasma conversion tube (620) may be selected from among various materials that enable plasma conversion of the process gas.

[0083] The plasma conversion tube (620) may include a gas inlet (IN) and a gas outlet (OUT). Process gas may be introduced through the gas inlet (IN), and process material may be discharged through the gas outlet (OUT). When the internal space of the plasma conversion tube (620) is provided in a cone shape with a diameter that increases in the direction from the gas inlet (IN) to the gas outlet (OUT), a potential may be formed between the plasma conversion tube (620) and the heater of the substrate support (200), thereby improving the ionization efficiency of the process gas.

[0084] Accordingly, the plasma conversion tube (620) of the substrate processing device (10) according to the embodiment of the present invention may include an expansion section (621) whose diameter gradually increases in the direction of movement of the process gas. For example, the plasma conversion tube (620) may include a diameter maintenance section (622) whose diameter remains the same and an expansion section (621) whose diameter gradually increases. Since the process gas is ionized with higher efficiency in the expansion section (621), the production amount of the process material increases, and the step coverage efficiency of the thin film can be improved.

[0085] The gas inlet (IN) and gas outlet (OUT) of the plasma conversion tube (620) may be provided in a circular shape. That is, the diameter maintenance section (622) may be provided in the shape of a cylinder, and the expansion section (621) may be provided in the shape of a cone.

[0086] Meanwhile, FIG. 4 illustrates a plasma conversion tube (620) including an expansion section (621) whose diameter increases in a conical shape, but according to some embodiments of the present invention, as illustrated in FIG. 5, the plasma conversion tube (620) may also include an expansion section (621) whose diameter increases in a trumpet shape.

[0087] Figure 6 is a drawing showing a plasma conversion tube with threads formed thereon.

[0088] Referring to FIG. 6, a screw thread (623) may be formed on the surface of the plasma conversion tube (620).

[0089] The plasma conversion tube (620) may be screw-connected to the through hole (612). For this purpose, screw threads may be formed on the inner surface of the through hole (612). The plasma conversion tube (620) may be provided to be detachably attached to the through hole (612), so that a user may replace an old plasma conversion tube (620) with a new plasma conversion tube (620) considering the condition of the plasma conversion tube (620).

[0090] Figure 7 is a drawing showing a plasma conversion tube whose entire section is an extension section.

[0091] Referring to FIG. 7, the plasma conversion tube (620) may be provided so that its entirety is an extension section (621).

[0092] As the entire plasma conversion tube (620) is provided as an expansion section (621), the ionization efficiency for the process gas passing through the plasma conversion tube (620) is improved, and the production amount of the process material can be increased.

[0093] FIG. 8 is a drawing showing a plasma conversion tube including multiple expansion sections having different diameter increase ratios.

[0094] Referring to FIG. 8, the plasma conversion tube (620) may include a plurality of expansion sections (621a, 621b).

[0095] The diameter increase ratio of each of the plurality of expansion sections (621a, 621b) may gradually increase along the direction of movement of the process gas. Referring to FIG. 8, the diameter increase ratio of the second expansion section (621b) may be formed to be higher than the diameter increase ratio of the first expansion section (621a). Here, the first expansion section (621a) and the second expansion section (621b) may be adjacent to the gas inlet (IN) and the gas outlet (OUT), respectively. The process gas ionized in the first expansion section (621a) may be ionized with higher efficiency in the second expansion section (621b).

[0096] FIG. 9 is a drawing showing a plasma conversion tube including multiple expansion sections having the same diameter increase ratio.

[0097] Referring to FIG. 9, the plasma conversion tube (620) may include a plurality of expansion sections (621).

[0098] The diameter increase ratio of each of the plurality of expansion sections (621) can be formed identically. That is, a plurality of expansion sections (621) having the same diameter increase ratio can be stacked in the direction of movement of the process gas. The process gas ionized in one expansion section (621) is additionally ionized in a subsequently arranged expansion section (621), and this process can be repeated through all expansion sections (621).

[0099] Figure 10 is a drawing showing a gas inlet of a plasma conversion tube.

[0100] Referring to FIG. 10, the gas inlet (IN) of the plasma conversion tube (620) may be provided in a polygonal shape.

[0101] Although Fig. 10 illustrates a hexagonal gas inlet (IN), according to some embodiments of the present invention, the gas inlet (IN) may be provided in various shapes, such as triangular and square. The shape of the gas inlet (IN) may be appropriately determined by taking into consideration ionization efficiency and thin film deposition efficiency.

[0102] Regardless of the shape of the gas inlet (IN), the outer surface of the plasma conversion tube (620) may be provided in a circular shape. In this case, threads may be formed on the outer surface of the plasma conversion tube (620). As the threads are formed, coupling and decoupling between the plasma conversion tube (620) and the through hole (612) can be easily performed.

[0103] Fig. 11 is a plan view of a plasma generator, Fig. 12 is a side cross-sectional view of a plasma generator, Fig. 13 is a side cross-sectional view of a plasma generator equipped with a guide ring having an inclined guide surface, and Fig. 14 is a side cross-sectional view of a plasma generator equipped with a guide ring having a parallel guide surface and an inclined guide surface.

[0104] Referring to FIGS. 11 and 12, the plasma generating unit (600) may include a plurality of plasma conversion tubes (620).

[0105] A plurality of plasma conversion tubes (620) can be inserted into corresponding through holes (612), respectively. The plurality of plasma conversion tubes (620) can be arranged on one side of the plasma generating body (610) of the plasma generating unit (600). The plurality of plasma conversion tubes (620) can be arranged in the shape of concentric circles. For example, among the plurality of plasma conversion tubes (620), a first group can be arranged in the shape of a circle having a first diameter, a second group can be arranged in the shape of a circle having a second diameter, and the plurality of groups can be arranged in the shape of circles having different diameters.

[0106] The plasma generating unit (600) may include a guide ring (630). The guide ring (630) may be formed to have a concentric shape and protrude from one side of the plasma generating body (610) where the gas outlet (OUT) of the plasma conversion tube (620) is formed, so as to guide a process gas or a process material. A plurality of plasma conversion tubes (620) may be arranged in a concentric shape in an area of ​​one side of the plasma generating body (610) where the guide ring (630) is not arranged. The process gas or process material discharged from the plasma conversion tube (620) is guided by the guide ring (630) so as to have a constant discharge pattern.

[0107] Each of the plurality of guide rings (630) may have a parallel guide surface (631) parallel to the moving direction of the process material as illustrated in FIG. 12, or an inclined guide surface (632) inclined to the moving direction of the process material as illustrated in FIG. 13. Alternatively, each of the plurality of guide rings (630) may include both a parallel guide surface (631) parallel to the moving direction of the process material and an inclined guide surface (632) inclined to the moving direction of the process material as illustrated in FIG. 14. The injection pattern of the process gas or the process material can be determined depending on the shape and arrangement pattern of the guide surfaces (631, 632).

[0108] Fig. 15 is a drawing showing a plasma generating unit having multiple plasma conversion regions.

[0109] Referring to FIG. 15, the plasma generating unit (600) may include a plurality of plasma conversion regions (641, 642).

[0110] The first plasma conversion region (641) may include a first through-hole into which a plasma conversion tube (620) of a first shape can be coupled, and the second plasma conversion region (642) may include a second through-hole into which a plasma conversion tube (620) of a second shape can be coupled. The plasma conversion tube (620) provided in the first plasma conversion region (641) and the plasma conversion tube (620) provided in the second plasma conversion region (642) may convert the process gas into a plasma state with different performances or may inject the process gas or the process material with different injection patterns.

[0111] The first plasma conversion region (641) may correspond to the central region of the plasma generation unit (600), and the second plasma conversion region (642) may correspond to the edge region of the plasma generation unit (600) surrounding the first plasma conversion region (641). That is, the second plasma conversion region (642) may be the remaining region excluding the first plasma conversion region (641) among the entire plasma conversion regions (641, 642). The first plasma conversion region (641) may spray ionized process material with higher efficiency than the second plasma conversion region (642).

[0112] Meanwhile, although FIG. 15 illustrates that the plasma generation unit (600) includes two plasma conversion regions (641, 642), this is merely exemplary, and the plasma generation unit (600) may include three or more plasma conversion regions. In addition, the arrangement pattern of the multiple plasma conversion regions may be determined in various ways depending on the type of process gas and the deposition state of the thin film.

[0113] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without altering the technical concept or essential features thereof. Therefore, the embodiments described above should be understood to be illustrative in all respects and not restrictive.

Claims

1. A process chamber that provides a process processing space for the substrate process; and A plasma generating unit is provided in the above process chamber and converts process gas into process material in a plasma state. The above plasma generating unit is, A plasma generating body providing a first diffusion space for diffusion of process gas; A through hole formed on one side of the plasma generating body to pass the diffused process gas; and A substrate processing device including a plasma conversion tube provided in the above through hole to convert a process gas into a process material in a plasma state.

2. In paragraph 1, The above plasma conversion tube is a substrate processing device that can be detached from the through hole.

3. In paragraph 1, The above plasma conversion tube is a substrate processing device provided with aluminum material.

4. In paragraph 1, A substrate processing device in which screw threads are formed on the surface of the above plasma conversion tube.

5. In paragraph 1, A substrate processing device wherein the plasma conversion tube includes an expansion section whose diameter gradually increases in the direction of movement of the process gas.

6. In paragraph 5, The above-mentioned expansion section is a substrate processing device with a diameter that increases in a cone or trumpet shape.

7. In paragraph 5, A substrate processing device in which, when the above expansion sections are multiple, the diameter increase ratio of each of the multiple expansion sections gradually increases along the direction of movement of the process gas.

8. In paragraph 5, A substrate processing device in which, when the above-mentioned expansion sections are multiple, the diameter increase ratio of each of the multiple expansion sections is formed identically.

9. In paragraph 1, A substrate processing device in which the gas inlet of the above plasma conversion tube is provided in a circular or polygonal shape.

10. In paragraph 1, A substrate processing device in which the plasma generating unit includes a plurality of guide rings that are formed in a concentric shape and protrude on one side of the plasma generating body in which the gas discharge port of the plasma conversion tube is formed to guide a process gas or a process material.

11. In paragraph 10, The above plasma conversion tube is provided in multiple numbers, A substrate processing device in which the plurality of plasma conversion tubes are arranged in a concentric shape in an area on one side of the plasma generating body where the guide ring is not arranged.

12. In paragraph 10, A substrate processing device in which each of the plurality of guide rings has a parallel guide surface parallel to the direction of movement of the process material.

13. In paragraph 10, A substrate processing device in which each of the plurality of guide rings has an inclined guide surface inclined in the direction of movement of the process material.

14. In paragraph 1, The above through holes and the above plasma conversion tubes are each provided in multiple numbers, The first plasma conversion region of the plasma generating unit includes a first through hole capable of coupling a plasma conversion tube of the first shape, A substrate processing device in which the second plasma conversion region of the plasma generating unit includes a second through hole capable of coupling a plasma conversion tube of a second shape.

15. In paragraph 14, The above first plasma conversion region corresponds to the central region of the plasma generating unit, A substrate processing device in which the second plasma conversion region corresponds to an edge region of the plasma generating unit surrounding the first plasma conversion region.

16. In paragraph 1, It further includes a process material supply unit that is arranged below the plasma generation unit and supplies process gas or process material supplied from the plasma generation unit to the substrate, The above plasma conversion tube is a substrate processing device that connects the first diffusion space and the process material supply unit.

17. In paragraph 16, A substrate processing device, wherein the process material supply unit includes a second diffusion space provided for diffusion of a process gas or process material.

18. In paragraph 16, The above process material supply unit is a substrate processing device that generates process materials using a capacitively coupled plasma (CCP) method.

19. In paragraph 1, The above plasma generating unit is a substrate processing device that converts process gas into a plasma state using a hollow cathode plasma (HCP) method.

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