Component using anodic oxide film and manufacturing method therefor

Abstract

The present invention provides a component using an anodic oxide film and including a three-dimensional electrode layer, and a manufacturing method therefor.

Description

Components using anodic oxide film and their manufacturing method

[0001] The present invention relates to a component using an anodic oxide film and a method for manufacturing the same.

[0002] Components using the anodic oxide film described below include electrical energy storage devices such as capacitors and batteries.

[0003] Multilayer ceramic capacitors (MLCCs), a type of multilayer chip electronic component, are used in a variety of electronic devices due to their compact size, high capacity, and ease of mounting. Multilayer ceramic capacitors have a structure in which multiple dielectric layers are alternately arranged with internal electrode layers of different polarities between the dielectric layers.

[0004] As electronic devices have recently become smaller, multilayer ceramic capacitors are also following this trend of miniaturization. To achieve miniaturization, high-capacity multilayer ceramic capacitors are being implemented by thinning the dielectric layer and increasing the number of internal electrode layers.

[0005] Multilayer ceramic capacitors include multiple dielectric layers and first and second internal electrode layers formed on the dielectric layers, and are formed by stacking multiple dielectric layers on which the internal electrode layers are formed. The first and second internal electrode layers are arranged to face each other with one dielectric layer between them. However, these capacitors have limitations in increasing capacitance because the internal electrode layers are in a two-dimensional planar form.

[0006] Technologies utilizing anodic oxide have been proposed to increase capacitance. Here, anodic oxide refers to a film formed by anodizing a base metal, and pores are the holes formed during the process of anodizing the base metal to form the anodic oxide film. Anodic oxide films contain numerous pores, and technologies have been proposed to utilize these pores to manufacture components such as capacitors.

[0007] The conventional technology using an anodic oxide film sequentially stacks a first electrode layer, a dielectric layer, and a second electrode layer within the pores of the anodic oxide film, connects the first electrode layer to the first electrode connection portion, and connects the second electrode layer to the second electrode connection portion to implement a capacitor.

[0008] This prior art suggests a structure in which the first and second electrode connecting parts are connected to the upper surface of the anodic oxide film, and a structure in which the first and second electrode connecting parts are connected to opposite surfaces, such as the upper and lower surfaces of the anodic oxide film.

[0009] First, in the case of a structure in which the first and second electrode connections are all connected on the upper surface of the anodic oxide film, there is a problem in that an additional etching process or a separate deposition mask is required to connect the first electrode connection to the first electrode layer. More specifically, when the first electrode layer, the dielectric layer, and the second electrode layer are sequentially deposited, the dielectric layer and the second electrode layer exist over the entire upper surface of the first electrode layer. Therefore, after depositing the first electrode layer, a process is required to remove the dielectric layer and the second electrode layer provided on the upper surface of the first electrode layer by an etching process such as PDE (Photo-Dry Etching) so that the first electrode layer is exposed. Through this, the first electrode connection should be connected to the exposed first electrode layer. Alternatively, in order to expose the first conductive layer without shorting the first electrode layer and the second electrode layer, a separate deposition mask must be used after depositing the first electrode layer so that the deposition area of ​​the dielectric layer is smaller than that of the first electrode layer, and a separate deposition mask must be used after depositing the dielectric layer so that the deposition area of ​​the second electrode layer is smaller than that of the dielectric layer. Through this, the first electrode connection must be connected to the exposed first electrode layer.

[0010] Next, when the first and second electrode connecting parts are connected to the upper and lower surfaces of the anodic oxide film, respectively, the above process is not required, but since two electrode connecting parts must be provided on the upper and lower surfaces of the anodic oxide film, respectively, a problem arises in that the installation positions of the first and second electrode connecting parts are limited.

[0011] [Prior Art Literature]

[0012] [Patent Document]

[0013] (Patent Document 1) U.S. Patent No. 8,912,522

[0014] (Patent Document 2) U.S. Patent No. 11,581,139

[0015] (Patent Document 3) Republic of Korea Patent Gazette No. 10-2004806

[0016] The present invention has been devised to solve the problems of the above-described prior art, and its purpose is to provide a component using an anodic oxide film and a manufacturing method thereof, which can greatly improve capacity because the electrode layer has a three-dimensional shape.

[0017] In addition, the present invention aims to provide a component using an anodic oxide film and a manufacturing method thereof, which enables the first and second electrode connection parts to be connected all on the upper surface of the anodic oxide film by using only some of the pores provided with the first electrode layer as an electric energy storage space instead of using all of the pores provided with the first electrode layer as an electric energy storage space.

[0018] In addition, the present invention aims to provide a component using an anodic oxide film and a manufacturing method thereof, which enable both the first and second electrode connecting portions to be connected on the upper surface of the anodic oxide film, and do not require an additional etching process or a separate deposition mask for this purpose.

[0019] In order to achieve the object of the present invention, a method for manufacturing a component using an anodic oxide film according to the present invention is provided, wherein the method for manufacturing a component using an anodic oxide film is performed by depositing an atomic layer on an anodic oxide film using an atomic layer deposition head, the method comprising: forming a first layer on the anodic oxide film using the atomic layer deposition head; forming a second layer on a portion of the first layer so as to overlap the first layer after relatively moving at least one of the atomic layer deposition head and the anodic oxide film; and forming a third layer on a portion of the second layer so as to overlap the second layer after relatively moving at least one of the atomic layer deposition head and the anodic oxide film.

[0020] Additionally, the second layer is provided between the first layer and the third layer so that the first layer and the third layer do not touch each other.

[0021] In addition, the anodic oxide film has pores, and at least a portion of the first layer, the second layer, and the third layer is provided inside the pores.

[0022] In addition, the atomic layer deposition head includes a deposition unit for depositing an atomic layer; a pumping unit provided around the deposition unit for exhausting gas injected from the deposition unit; and an air curtain unit provided around the pumping unit for forming an air curtain by injecting a purge gas, thereby forming the first to third layers while isolating the atomic layer deposition region from the outside thereof.

[0023] Meanwhile, a component using an anodic oxide film according to the present invention includes: an anodic oxide film having a plurality of pores; a first layer formed in a first region of the anodic oxide film; a second layer overlapping only a portion of the first region; and a third layer overlapping only a portion of the first region and a portion of the second region.

[0024] Additionally, the first layer and the third layer are electrode layers, and the second layer is a dielectric layer.

[0025] Additionally, the first layer and the third layer are electrode layers, and the second layer is an electrolyte layer.

[0026] In addition, the configuration in which the first to third layers overlap according to positions on the anodic oxide film is different, including a first position where the first to third layers are not provided on the anodic oxide film; a second position where the first layer is provided on the anodic oxide film, but the second and third layers are not provided on the first layer; a third position where the first and second layers are provided on the anodic oxide film, but the third layer is not provided on the second layer; a fourth position where the first to third layers are provided on the anodic oxide film; a fifth position where the second and third layers are provided on the anodic oxide film, but the first layer is not provided; and a sixth position where the third layer is provided on the anodic oxide film, but the first layer and the second layer are not provided; wherein the first region is the second region to the fourth region, the second region is the third region to the fifth region, and the third region is the fourth region to the sixth region.

[0027] Within the pore, the first layer is deposited only on a portion of the interior of the pore, and within the pore, the second layer covers the first layer so that it is not exposed, so that the first layer does not come into contact with the third layer.

[0028] Additionally, within the pore, the first layer is deposited only on a portion of the interior of the pore, within the pore, the second layer is deposited deeper into the pore than the first layer, and within the pore, the third layer is deposited deeper into the pore than the second layer.

[0029] Additionally, within the pore, the first layer is deposited only on a portion of the interior of the pore, within the pore, the second layer is deposited shallower into the pore than the first layer, and within the pore, the third layer is deposited shallower into the pore than the second layer.

[0030] Additionally, it further includes a fourth layer formed on top of the second layer and used to adjust the capacity of the component.

[0031] Meanwhile, a component using an anodic oxide film according to the present invention comprises: an anodic oxide film having a top surface and a plurality of fine pores extending inward from the top surface; a first layer including a first layer upper surface portion formed on an upper surface of the anodic oxide film and an interior of the first layer formed inside the pores, wherein the first layer upper surface portion and the interior of the first layer are formed continuously; a second layer including a second layer upper surface portion formed on a portion of the first layer upper surface portion and the upper surface of the anodic oxide film so that one side of the first layer upper surface portion is exposed and the other side of the first layer upper surface portion is not exposed, and an interior of the second layer formed inside the pores, wherein the second layer upper surface portion and the interior of the second layer are formed continuously; And a third layer formed on a portion of the upper surface of the second layer and the upper surface of the anodic oxide film so that one side of the upper surface of the second layer is exposed and the other side of the upper surface of the second layer is not exposed, and a third layer formed inside the pore, wherein the upper surface of the third layer and the interior of the third layer are formed continuously.

[0032] In addition, among the plurality of pores, some pores do not have the first layer, the second layer, and the third layer, some pores have only the first layer, some pores have only the third layer, some pores have only the first and second layers, some pores have only the second and third layers, and the remaining pores have the first layer, the second layer, and the third layer.

[0033] The present invention provides a component using an anodic oxide film and a method for manufacturing the same, which enables first and second electrode connection parts to be connected entirely on the upper surface of the anodic oxide film by using only some pores of the anodic oxide film as an electric energy storage space.

[0034] In addition, the present invention provides a component using an anodic oxide film and a manufacturing method thereof, which enable the connection of first and second electrode connections on the upper surface of an anodic oxide film without performing a separate etching process or a process using a deposition mask by exposing one end of the first layer, thereby enabling the manufacturing of a component using an anodic oxide film more efficiently without the need for performing a separate additional process.

[0035] Figures 1 to 3 sequentially illustrate a method for manufacturing a component using an anodic oxide film according to a preferred embodiment of the present invention.

[0036] Figure 4 is a diagram illustrating a state in which a first layer is formed on an anodic oxide film as viewed from above.

[0037] Figure 5 is an enlarged view of a section cut along line A-A' of Figure 4.

[0038] Figure 6 is a diagram illustrating a state in which a second layer is formed to overlap the first layer on an anodic oxide film, viewed from above.

[0039] Figure 7 is an enlarged view of a section cut along line A-A' of Figure 6.

[0040] Figure 8 is a diagram illustrating a state in which a third layer is formed overlapping a second layer on an anodic oxide film, viewed from above.

[0041] Figure 9 is an enlarged view of a section cut along line A-A' of Figure 8.

[0042] Figure 10 is a diagram showing a state in which parts using an anodic oxide film are classified by location.

[0043] Fig. 11 is a diagram illustrating an example of the first modification.

[0044] Figure 12 is a diagram showing an example of the second variation.

[0045] Fig. 13 is an enlarged view of some of the pores in Fig. 12.

[0046] Figure 14 is a diagram showing an example of the third variation.

[0047] Figure 15 is an enlarged view of some of the pores of the 14th pore.

[0048] Figure 16 is a diagram showing an example of the fourth variation.

[0049] Fig. 17 is an enlarged view of some of the pores in Fig. 16.

[0050] Figure 18 is a diagram illustrating the fifth variation example viewed from above.

[0051] Figure 19 is an enlarged view of a section cut along line A-A' of Figure 18.

[0052] The following merely exemplifies the principles of the invention. Therefore, those skilled in the art will be able to implement the principles of the invention and invent various devices within the scope and spirit of the invention, even if not explicitly described or illustrated herein. Furthermore, all conditional terms and embodiments listed herein are expressly intended, in principle, to facilitate understanding of the invention's concepts and should be understood as being in no way limiting to the specifically listed embodiments and conditions.

[0053] The above-described purposes, features and advantages will become clearer through the following detailed description with reference to the attached drawings, so that a person having ordinary skill in the art to which the invention pertains can easily practice the technical idea of ​​the invention.

[0054] Embodiments described herein will be described with reference to cross-sectional and / or perspective views, which are ideal exemplary drawings of the present invention. The thicknesses of films and regions, etc., illustrated in these drawings are exaggerated for the purpose of effectively explaining the technical contents. The form of the exemplary drawings may be modified due to manufacturing techniques and / or tolerances. Therefore, embodiments of the present invention are not limited to the specific forms illustrated, but also include changes in form resulting from the manufacturing process. Technical terms used herein are used only to describe specific embodiments and are not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this specification, it should be understood that terms such as "comprise" or "have" are intended to specify the presence of a feature, number, step, operation, component, part, or combination thereof described in this specification, but do not preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0055] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. In describing various embodiments below, components that perform the same function will be given the same names and reference numbers for convenience, even if the embodiments differ. Furthermore, for convenience, descriptions of configurations and operations already described in other embodiments will be omitted.

[0056] FIGS. 1 to 3 are views sequentially illustrating a method for manufacturing a component using an anodic oxide film according to a preferred embodiment of the present invention, FIG. 4 is a view viewed from above showing a state in which a first layer is formed on an anodic oxide film, FIG. 5 is an enlarged view of a section taken along line A-A' of FIG. 4, FIG. 6 is a view viewed from above showing a state in which a second layer is formed to overlap the first layer on an anodic oxide film, FIG. 7 is an enlarged view of a section taken along line A-A' of FIG. 6, FIG. 8 is a view viewed from above showing a state in which a third layer is formed to overlap the second layer on an anodic oxide film, FIG. 9 is an enlarged view of a section taken along line A-A' of FIG. 8, and FIG. 10 is a view illustrating a state in which annodic oxide film is divided by location.

[0057] Referring to FIGS. 1 to 10, a method for manufacturing a component (AP) using an anodic oxide film (AL) according to a preferred embodiment of the present invention includes the steps of forming a first layer (101) on an anodic oxide film (AL) using an atomic layer deposition head (1000), relatively moving at least one of the atomic layer deposition head (1000) and the anodic oxide film (AL), and then forming a second layer (102) on a portion of the upper surface of the first layer (101) to overlap with the first layer (101), and relatively moving at least one of the atomic layer deposition head (1000) and the anodic oxide film (AL), and then forming a third layer (103) on a portion of the upper surface of the second layer (102) to overlap with the second layer (102).

[0058] Referring to FIG. 1, FIG. 4 and FIG. 5, first, a step of forming a first layer (101) on an anodic oxide film (AL) using an atomic layer deposition head (1000) is performed.

[0059] An atomic layer deposition head (1000) is configured to include a deposition unit (1001) for depositing an atomic layer, a pumping unit (1002) provided around the deposition unit (1001) to exhaust gas injected from the deposition unit (1001), and an air curtain unit (1003) provided around the pumping unit (1002) to inject purge gas to form an air curtain.

[0060] The deposition unit (1001) performs a cycle (hereinafter referred to as an “atomic layer generation cycle”) in which a precursor gas is adsorbed on the upper surface of an anodic oxide film (AL) and a reactant gas is supplied to generate an atomic layer through chemical substitution of the precursor gas and the reactant gas. Through this, a first layer (101) is formed on the upper surface of the anodic oxide film (AL). The arrows shown in the deposition unit (1001) in Fig. 1 indicate the injection directions of the precursor gas and reactant gas injected from the deposition unit (1001).

[0061] The atomic layer deposition head (1000) preferably operates the pumping unit (1002) when the deposition unit (1001) operates. The pumping unit (1002) is positioned between the deposition unit (1001) and the air curtain unit (1003) and can function to exhaust precursor gas and reactant gas flowing in the direction of the air curtain. The arrows shown in the pumping unit (1002) in FIG. 1 indicate the exhaust direction of the precursor gas and reactant gas by the pumping unit (1002).

[0062] The atomic layer deposition head (1000) operates the air curtain unit (1003) when the deposition unit (1001) operates. The air curtain unit (1003) injects purge gas from the outside of the deposition unit (1001) toward the anodic oxide film (AL). The arrow shown in the air curtain unit (1003) in Fig. 1 indicates the purge gas injection direction.

[0063] As a result, a curtain-shaped blocking film made of air can be formed at a position corresponding to the air curtain portion (1003) among the entire area of ​​the upper surface of the air anodic oxide film (AL). Accordingly, the precursor gas and the reactant gas sprayed from the deposition portion (1001) may not flow outside the air. In other words, the atomic layer deposition head (1000) can divide the flow area and the non-flow area of ​​the precursor gas and the reactant gas on the upper surface of the anodic oxide film (AL) through the air sprayed from the air curtain portion (1003). The precursor gas and the reactant gas sprayed from the deposition portion (1001) can flow within a certain range on the upper surface of the anodic oxide film (AL) by the air curtain formed through the air of the air curtain portion (1003).

[0064] The range within which the precursor gas and reactant gas flow becomes the atomic layer deposition region.

[0065] In other words, the atomic layer deposition head (1000) forms a first layer (101) in a specific region corresponding to the atomic layer deposition region among the entire area of ​​the upper surface of the anodic oxide film (AL) by means of a precursor gas and a reactant gas flowing in the atomic layer deposition region while isolating the outside and the atomic layer deposition region from the upper surface of the anodic oxide film (AL) through an air curtain. The outside of the atomic layer deposition region is a non-flowing region where the precursor gas and the reactant gas do not flow. Therefore, the first layer (101) is not formed in the remaining region corresponding to the non-flowing region among the entire area of ​​the upper surface of the anodic oxide film (AL) (the remaining region excluding the specific region among the entire area of ​​the upper surface of the anodic oxide film (AL)).

[0066] Referring to Fig. 4, a first layer (101) is formed in a specific area, the first area (F1), among the entire area of ​​the upper surface of the anodic oxide film (AL). The remaining area, excluding the first area (F1), among the entire area of ​​the upper surface of the anodic oxide film (AL), is a non-flowing area, an area where the first layer (101) is not formed.

[0067] Referring to Fig. 5, the anodic oxide film (AL) refers to a film formed by anodizing a base metal. The anodic oxide film is vertically divided into a barrier layer (BR) that does not have pores (PR) formed inside and a porous layer (PF) that has pores (PR) formed inside. The pores (PR) refer to holes formed in the process of forming the anodic oxide film (AL) by anodizing the base metal. For example, when the base metal is aluminum (Al) or an aluminum alloy, when the base metal is anodized, only the anodic oxide film (AL) made of aluminum oxide (Al2O3) remains on the surface of the base metal. The anodic oxide film (AL) has a plurality of pores (PR), and the pores (PR) have a length of 20 ㎛ to 200 ㎛ and a diameter of 10 nm to 1 ㎛. The pitch between adjacent pores (PR) is 20 nm to 200 nm. One end of the pore (PR) is closed by a barrier layer (BR), and the other end of the pore (PR) is open.

[0068] The anodic oxide film (AL) has at least one of the first to third layers (101, 102, 103) in only some of the pores (PR) among a plurality of pores (PR), and uses only some of the pores (PR) as an electric energy storage space.

[0069] An anodic oxide film (AL) has a vertical height and a horizontal length intersecting the vertical height. Components (AP) utilizing an anodic oxide film (AL) can have different capacities of electrical energy storage space by adjusting the aspect ratio of the height and length of the anodic oxide film (AL).

[0070] As an example, the anodic oxide film (AL) has a first height (h1). The first height (h1) may preferably be 40 μm.

[0071] The first layer (101) is formed in the first region (F1) corresponding to the atomic layer deposition region among the entire region of the upper surface of the anodic oxide film (AL). Due to the structure of the anodic oxide film (AL) including pores (PR), at least a portion of the first layer (101) is provided inside the pores (PR).

[0072] Specifically, the first layer (101) is formed inside the pores (PR) along the inner surface of a plurality of pores (PR) included in the first region (F1), and is formed on the upper surface of a pore-free portion (NP) existing between adjacent pores (PR) included in the first region (F1). The first layer (101) is formed on the entire upper surface area of ​​the pore-free portion (NP) or a part of the upper surface area of ​​the pore-free portion (NP), and is formed along the entire inner surface by flowing into the interior of the pores (PR) through the openings of the pores (PR).

[0073] The first height (h1) of the anodic oxide film (AL) may be 20 µm or more and less than 60 µm, and preferably 40 µm. In this case, the first layer (101) of the first region (F1) may be formed on the entire inner surface of the pore (PR) along the inner surface including the wall surface and the bottom surface formed along the inner circumferential direction of the pore (PR).

[0074] Then, referring to FIG. 2, FIG. 6 and FIG. 7, after relatively moving at least one of the atomic layer deposition head (1000) and the anodic oxide film (AL), a step of forming a second layer (102) on the upper surface of a part of the first layer (101) to overlap with the first layer (101) is performed.

[0075] In the present invention, as an example, the anodic oxide film (AL) moves to one side (left side in the drawing). The anodic oxide film (AL) can move to one side with respect to the atomic layer deposition head (1000) by a support member (1010) that supports the anodic oxide film (AL) from the upper surface. The arrows depicted around the support member (1010) in FIG. 2 indicate the direction of movement of the anodic oxide film (AL) by the support member (1010).

[0076] The anodic oxide film (AL) can move a certain distance in one direction in the width direction with respect to the atomic layer deposition head (1000).

[0077] As the anodic oxide film (AL) moves, the atomic layer deposition region formed on the upper portion of the anodic oxide film (AL) by the atomic layer deposition head (1000) corresponds to a part of the entire area of ​​the upper surface of the first layer (101) and a first layer non-formation region where the first layer (101) is not formed among the entire area of ​​the upper surface of the anodic oxide film (AL). Here, the first layer non-formation region refers to at least a part of the peripheral area existing on one side (in the direction opposite to the movement direction of the anodic oxide film (AL)) of the area where the first layer (101) is formed among the entire area of ​​the upper surface of the anodic oxide film (AL).

[0078] The atomic layer deposition head (1000) performs an atomic layer generation cycle while forming an atomic layer deposition region corresponding to a portion of the first layer (101) and a first layer non-formation region. As a result, a second layer (102) is formed in a portion of the entire upper surface of the first layer (101) and in the first layer non-formation region.

[0079] Accordingly, a second layer (102) is formed overlapping the first layer (101) in some areas of the entire upper surface of the anodic oxide film (AL), and only the second layer (102) is formed in the first layer non-formation area. At least a portion of the second layer (102) is provided inside the pore (PR). The second layer (102) formed in the first layer non-formation area is formed directly on the upper surface of the anodic oxide film (AL).

[0080] Referring to FIGS. 6 and 7, the second layer (102) overlaps only a portion of the first region (F1) of the anodic oxide film (AL) and is formed in the second region (F2). The second region (F2) includes a portion of the region where the first and second layers (101, 102) overlap and a region where only the second layer (102) is formed among the entire region of the upper surface of the anodic oxide film (AL).

[0081] Referring to Fig. 7, a second layer (102) is formed on the upper surface of the first layer (101) and the inner surface of the pore (PR) in the second region (F2).

[0082] Specifically, a part of the second region (F2) overlaps with a part of the first region (F1). Accordingly, a first layer (101) is formed on the inner surface of a plurality of pores (PR) included in a part of the second region (F2) overlapping with the first region (F1) and on the upper surface of the pore-free portion (NP). In the case of the pore-free portion (NP), the first layer (101) may be formed on the entire area or a part of the upper surface. In the second region (F2), the second layer (102) is formed on the upper surface of the first layer (101) formed on the inner surface of a plurality of pores (PR) existing in a part overlapping with the first region (F1) and on the upper surface of the pore-free portion (NP). The first layer (101) included in a part of the second region (F2) overlapping with the first region (F1) is covered by the second layer (102).

[0083] A second layer (102) is formed in the entire area or a part of the upper surface of the pore-free portion (NP) existing in the remaining part of the second area (F2) that does not overlap with the first area (F1), and a second layer (102) is formed on the inner surface of the pore (PR) existing between adjacent pore-free portions (NP).

[0084] In the second region (F2), some regions overlapping with the first region (F1) exist as overlapping first and second layers (101, 102), and the remaining regions not overlapping with the first region (F1) exist as only the second layer (102).

[0085] Then, referring to FIG. 3, FIG. 8 and FIG. 9, a step is performed in which the anodic oxide film (AL) is moved a certain distance in the same direction as the direction in which it was moved in the step of forming the second layer (102) to form a third layer (103) on the upper surface of a part of the second layer (102) so as to overlap with the second layer (102).

[0086] In the step of forming the second layer (102), the anodic oxide film (AL) is moved a certain distance in one direction in the width direction with respect to the atomic layer deposition head (1000), and can be moved a certain distance further in the same direction (one direction in the width direction with respect to the atomic layer deposition head (1000) (left side in the drawing).

[0087] Accordingly, the atomic layer deposition region corresponds to a third region (F3) formed by a part of the region where the first and second layers (101, 102) overlap among the entire region of the upper surface of the anodic oxide film (AL), a region where only the second layer (102) is formed among the entire region of the upper surface of the anodic oxide film (AL), and a second layer non-formation region where the second layer (102) is not formed. In the third region (F3), the second layer non-formation region refers to at least a part of the peripheral region existing on one side (in the direction opposite to the movement direction of the anodic oxide film (AL)) of the region where only the second layer (102) is formed without the first and second layers (101, 102) overlapping among the entire region of the upper surface of the anodic oxide film (AL).

[0088] The atomic layer deposition head (1000) performs an atomic layer generation cycle while forming an atomic layer deposition region corresponding to the third region (F3). As a result, a third layer (103) is formed in the third region (F3).

[0089] In a part of the third region (F3) among the entire area of ​​the upper surface of the anodic oxide film (AL), the first to third layers (101, 102, 103) are formed to overlap, in the first layer non-formed region of the third region (F3), the second and third layers (102, 103) are formed to overlap, and in the second layer non-formed region of the third region (F3), only the third layer (103) is formed.

[0090] Referring to FIGS. 8 and 9, in the third region (F3), the third layer (103) is formed on the upper surface of the second layer (102) and the inner surface of the pore (PR).

[0091] Specifically, a part of the third region (F3) overlaps with a part of the first and second regions (F1, F2). Accordingly, a third layer (103) is formed on the inner surface of a plurality of pores (PR) included in a part of the third region (F3) that overlaps with the first and second regions (F1, F2) and on the upper surface of the pore-free portion (NP). In the case of the pore-free portion (NP), the third layer (103) may be formed on the entire area or a part of the upper surface.

[0092] A part of the third layer (103) is provided inside the pore (PR). In the third region (F3), the third layer (103) is formed on the inner surface of a plurality of pores (PR) existing in a part overlapping with the first and second regions (F1, F2), but is formed on the upper surface of the second layer (102) formed while covering the first layer (101) and the upper surface of the pore-free portion (NP), but is formed on the upper surface of the second layer (102) formed while covering the first layer (101). In addition, in the third region (F3), the third layer (103) is formed on the upper surface of the second layer (102) formed in the first layer-free portion, which is a part of the second region (F2) included in the third region (F3).

[0093] In the third region (F3), some regions overlapping with the first and second regions (F1, F2) have the first to third layers (101, 102, 103) overlapping, some regions overlapping with the second region (F2) have the second and third layers (102, 103) overlapping, and the remaining regions not overlapping with the first and second regions (F1, F2) have only the third layer (103).

[0094] Referring to FIGS. 3, 8, and 9, the method for manufacturing a component (AP) using an anodic oxide film (AL) of the present invention sequentially performs steps of forming first to third layers (101, 102, 103), thereby manufacturing a structure in which, from one side in the width direction to the other side of the entire area of ​​the upper surface of the anodic oxide film (AL), an area where only the first layer (101) is formed, an area where the first and second layers (101, 102) overlap, an area where the first to third layers (101, 102, 103) overlap, an area where the second and third layers (102, 103) overlap, and an area where only the third layer (103) is formed are sequentially positioned.

[0095] In a method for manufacturing a component (AP) using an anodic oxide film (AL), a first layer (101) is formed in a specific area among the entire area of ​​the upper surface of the anodic oxide film (AL), and then, as an example, the anodic oxide film (AL) is moved by a certain distance to form a second layer (102), and then the anodic oxide film (AL) is further moved by a certain distance to form a third layer (103).

[0096] Due to this, one end of the first layer (101) (the end of the first layer (101) located on the left side in the drawing) is exposed based on the direction of movement of the anodic oxide film (AL) (for example, the left side in the drawing). In addition, one end (the left end in the drawing) of the second layer (102) formed on the upper surface of a portion of the first layer (101) is also exposed, and one end (the left end in the drawing) of the third layer (103) formed on the upper surface of the second layer (102) is also exposed.

[0097] Based on the direction opposite to the movement direction of the anodic oxide film (AL) (for example, the right side in the drawing), the other end of the first layer (101) (the end of the first layer (101) located on the right side in the drawing) is covered by the second layer (102) formed on the upper surface of a portion of the first layer (101). In addition, the other end of the second layer (102) (the right end in the drawing) is covered by the third layer (103). In contrast, the other end of the third layer (103) (the right end in the drawing) is exposed at the top of the anodic oxide film (AL) based on the stacking direction.

[0098] Accordingly, in the method for manufacturing a component using the anodic oxide film (AL) of the present invention, there is no need to perform a separate etching process or provide a separate deposition mask to expose the first and second layers (101, 102) in order to connect the first electrode connection part to the first layer (101) and the second electrode connection part to the third layer (103).

[0099] Unlike the method for manufacturing a component (AP) using the anodic oxide film (AL) of the present invention, when using a conventional manufacturing method, the first layer (101) is formed in an unexposed form by the second and third layers (102, 103). Therefore, in order to connect an electrode connection part to the first layer (101) by using the first and third layers (101, 103) as an electrode layer, a separate etching process is required to expose a portion of the first layer (101). Alternatively, after depositing the first layer (101), an additional first layer (101) exposure process using a separate deposition mask must be performed to expose the first layer (101).

[0100] However, when using the method for manufacturing a component (AP) using the anodic oxide film (AL) of the present invention, after the first to third layers (101, 102, 103) are formed on the anodic oxide film (AL), one end of the first layer (101) is formed in an exposed state without performing a separate etching process or a process using a deposition mask. Therefore, the method for manufacturing a component (AP) using the anodic oxide film (AL) of the present invention makes it possible to manufacture a component (AP) using the anodic oxide film (AL) more efficiently without having to perform a separate additional process for connecting an electrode connection portion to the first layer (101) functioning as an electrode layer.

[0101] Referring to FIG. 9, a component (AP) manufactured through a method for manufacturing a component (AP) using an anodic oxide film (AL) of the present invention is configured to include an anodic oxide film (AL) having a plurality of pores (PR), a first layer (101) formed in a first region (F1) of the anodic oxide film (AL), a second layer (102) overlapping only a part of the first region (F1), and a third layer (103) overlapping only a part of the first region (F1) and a part of the second region (F2).

[0102] The anodic oxide film (AL) has a number of fine pores (PR) extending inward from the upper surface of the adjacent non-pore forming portion (NP).

[0103] In a method for manufacturing a component (AP) using an anodic oxide film (AL), a process of depositing first to third layers (101, 102, 103) on a specific area (first to third areas (F1, F2, F3)) by specifying only a portion of the entire area of ​​the upper surface of the anodic oxide film (AL) is performed.

[0104] Accordingly, among the plurality of pores (PR) of the anodic oxide film (AL), some of the pores (PR) do not have the first to third layers (101, 102, 103). The pores (PR) that do not have all of the first to third layers (101, 102, 103) among the plurality of pores (PR) may be an external region of a specific region that is not included in a specific region (the first to third regions (F1, F2, F3)) where the process of depositing the first to third layers (101, 102, 103) is performed among the entire region of the upper surface of the anodic oxide film (AL).

[0105] Meanwhile, some of the pores (PR) included in any one of the first to third regions (F1, F2, F3) where the process of depositing the first to third layers (101, 102, 103) among the plurality of pores (PR) of the anodic oxide film (AL) is performed may have at least one of the first to third layers (101, 102, 103).

[0106] Specifically, among the plurality of pores (PR) included in the first region (F1), some of the pores (PR) of the first region (F1) included in a region that does not overlap with the second and third regions (F2, F3) have only the first layer (101). Among the plurality of pores (PR) included in the first region (F1), some of the pores (PR) of the other region (F1) included in a region that overlaps only with the second region (F2) have only the first and second layers (101, 102). Among the plurality of pores (PR) included in the first region (F1), some of the pores (PR) of the remaining region (F1) included in a region that overlaps with all of the second and third regions (F2, F3) have all of the first to third layers (101, 102, 103).

[0107] Among the plurality of pores (PR) included in the second region (F2), some of the pores (PR) of the second region (F2) included in the region that overlaps only with the first region (F1) have only the first and second layers (101, 102). Among the plurality of pores (PR) included in the second region (F2), some of the pores (PR) of the second region (F2) included in the region that does not overlap with the first region (F1) but overlaps only with the third region (F3) have only the second and third layers (102, 103). Among the plurality of pores (PR) included in the second region (F2), some of the remaining pores (PR) of the second region (F2) included in the region that overlaps with both the first and third regions (F1, F3) have all of the first to third layers (101, 102, 103).

[0108] Among the plurality of pores (PR) included in the third region (F3), some of the pores (PR) of the third region (F3) included in the region that overlaps only with the second region (F2) have only the second and third layers (102, 103). Among the plurality of pores (PR) included in the third region (F3), some of the pores (PR) of the third region (F3) included in the region that does not overlap with both the first and second regions (F1, F2) have only the third layer (103). Among the plurality of pores (PR) included in the third region (F3), some of the remaining pores (PR) of the third region (F3) included in the region that overlaps both the first and second regions (F1, F2) have all of the first to third layers (101, 102, 103).

[0109] The first layer (101) provided inside the pore (PR) is preferably the first layer interior (101b) forming the first layer (101), the second layer (102) is the second layer interior (102b) forming the second layer (102), and the third layer (103) is the third layer interior (103b) forming the third layer (103).

[0110] Specifically, the first layer (101) includes a first layer upper surface portion (101a) formed on the upper surface of a pore-free portion (NP) formed in the first region (F1) and a first layer inner surface (101b) formed inside a pore (PR) included in the first region (F1) (preferably, the first layer inner surface (101b) formed on the entire inner surface of the pore (PR)). The first layer (101) is formed by the first layer upper surface portion (101a) and the first layer inner surface (101b) formed continuously.

[0111] The second layer (102) is formed in the second region (F2) and includes a second layer upper surface (102a) formed on a portion of the first layer upper surface (101a) and an upper surface of the anodic oxide film (AL) so that one side (left side in the drawing) of the first layer upper surface (101a) is exposed and the other side (right side in the drawing) of the first layer upper surface (101a) is not exposed, and an inner part of the second layer formed inside a pore (PR) included in the second region (F2) (preferably, an inner part of the second layer (102b) formed entirely on the inner surface of the pore (PR)). The second layer (102) is formed by the second layer upper surface (102a) and the inner part of the second layer (102b) that are formed continuously.

[0112] The third layer (103) is formed in the third region (F3) and includes a third layer upper surface (103a) formed on a portion of the upper surface of the second layer (102a) and an upper surface of the anodic oxide film (AL) so that one side of the second layer upper surface (102a) is exposed and the other side of the second layer upper surface (102a) is not exposed, and an inner third layer formed inside the pore (PR) (preferably, an inner third layer (103b) formed on the entire inner surface of the pore (PR)). The third layer (103) is formed by the third layer upper surface (103a) and the inner third layer (103b) that are formed continuously.

[0113] A component (AP) using an anodic oxide film (AL) is provided so that the first layer (101) and the third layer (103) do not touch each other due to a second layer (102) provided between the first layer (101) and the third layer (103).

[0114] More specifically, the second layer (102) covers only the other side of the first layer upper surface (101a) through the second layer upper surface (102a) and covers the first layer interior (101b) that is continuous with the other side of the first layer upper surface (101a) through the second layer interior (102b), and is provided on the upper part of the first layer (101). The third layer (103) covers only the other side of the second layer upper surface (102a) through the third layer upper surface (103a), and covers the second layer interior (102b) that is continuous with the other side of the second layer upper surface (102a) through the third layer interior (103b), and is provided on the upper part of the second layer (102).

[0115] Accordingly, the component (AP) using the anodic oxide film (AL) has a structure in which the first to third layers (101, 102, 103) overlap in some area (the fourth position (SC4) described later) on the anodic oxide film (AL), but the first layer (101) and the third layer (103) are separated by the second layer (102). Accordingly, the component (AP) using the anodic oxide film (AL) can effectively prevent a short circuit problem between the first layer (101) and the third layer (103) in a structure in which the first and third layers (101, 103) are used as electrode layers.

[0116] In the method for manufacturing a component (AP) using an anodic oxide film (AL) of the present invention, a process is performed in which first to third regions (F1, F2, F3) are specified on the anodic oxide film (AL), but only a portion of the first to third regions (F1, F2, F3) are overlapped to form first to third layers (101, 102, 103). Accordingly, a component (AP) can be manufactured in which only a portion of the first to third layers (101, 102, 103) on the anodic oxide film (AL) are overlapped as an electric energy storage space. The first and third layers (101, 103) are separated from each other by the second layer (102), but a portion of the first layer (101) provided in a part of the entire area of ​​the first area (F1) that does not overlap with both the second and third areas (F2, F3) is provided in an exposed state without being covered by the second layer (102). Accordingly, the component (AP) using the anodic oxide film (AL) of the present invention can have both a first electrode connection portion connected to the first layer (101) on the upper surface of the anodic oxide film (AL) and a second electrode connection portion connected to the third layer (103).

[0117] A component (AP) using an anodic oxide film (AL) can be configured with the first and third layers (101, 103) as electrode layers and the second layer (102) as a dielectric layer. In this case, the component (AP) using an anodic oxide film (AL) can preferably function as a capacitor.

[0118] When the second layer (102) is a dielectric layer, the first and third layers (101, 103) may each be formed of a metal film made of a first metal, a metal oxide film including the first metal, a metal nitride film including the first metal, a metal oxynitride film including the first metal, or a combination thereof. In exemplary embodiments, the first metal may be Ti, Co, Nb, or Sn. In exemplary embodiments, the first and third layers (101, 103) may include Ti, Ti oxide, Ti nitride, Ti oxynitride, Co, Co oxide, Co, nitride, Co oxynitride, Nb, Nb oxide, Nb nitride, Nb oxynitride, Sn, Sn oxide, Sn nitride, Sn oxynitride, or a combination thereof. For example, the first and third layers may each be formed of TiN, CoN, NbN, SnO2, or a combination thereof.

[0119] When the second layer (102) is a dielectric layer, the second layer (102) may be formed of a metal oxide film including a second metal. The second metal may be Hf, Zr, Nb, Ce, or Ti. In exemplary embodiments, the dielectric layer may be formed of Al2O3, ZrO2, HfO2, Nb2O5, CeO2, or TiO2.

[0120] A component (AP) using an anodic oxide film (AL) can be configured with the first and third layers (101, 103) as electrode layers and the second layer (102) as an electrolyte layer. In this case, the component (AP) using an anodic oxide film (AL) can preferably function as a battery.

[0121] When the second layer (102) is an electrolyte layer, the first layer (101) is a lithium transition metal oxide such as lithium cobalt oxide (LCO), lithium nickel oxide, lithium nickel cobalt oxide, lithium nickel cobalt aluminum oxide (NCA), lithium nickel cobalt manganese oxide (NCM), lithium manganate, lithium iron phosphate, nickel sulfide, copper sulfide, lithium sulfide, iron oxide, or vanadium oxide, but is not necessarily limited thereto, and any material used as a cathode active material in the relevant technical field is possible. The first layer (101) may be, for example, lithium cobalt oxide (LCO) with excellent high-voltage safety.

[0122] When the second layer (102) is an electrolyte layer, the second layer (102) may be at least one selected from among a sulfide-based solid electrolyte and an oxide-based solid electrolyte, but is not necessarily limited to these, and any inorganic solid electrolyte used in the relevant technical field may be used.

[0123] When the second layer (102) is an electrolyte layer, the second layer (102) may be a carbon-based negative electrode active material and / or a non-carbon-based negative electrode active material. The carbon-based negative electrode active material may be crystalline carbon, amorphous carbon, or a mixture thereof. The crystalline carbon may be graphite such as natural graphite or artificial graphite in a non-shaped, plate-like, flake-like, spherical, or fiber-like shape, and the amorphous carbon may be soft carbon (low-temperature calcined carbon) or hard carbon, mesophase pitch carbide, calcined coke, or the like. The amorphous carbon may be, for example, carbon black (CB), acetylene black (AB), furnace black (FB), ketjen black (KB), graphene, or the like, but is not necessarily limited thereto, and any material used in the art may be used. The non-carbonaceous negative electrode active material is at least one selected from the group consisting of a metal capable of forming an alloy with lithium, a metal alloy capable of forming an alloy with lithium, and an oxide of a metal capable of forming an alloy with lithium. The metal capable of forming an alloy with lithium may be, for example, Si, Sn, Al, Ge, Pb, Bi, Sb, a Si-Y alloy (wherein Y is an alkali metal, an alkaline earth metal, a group 13-16 element, a transition metal, a rare earth element, or a combination thereof, and is not Si), a Sn-Y alloy (wherein Y is an alkali metal, an alkaline earth metal, a group 13-16 element, a transition metal, a rare earth element, or a combination thereof, and is not Sn), etc.

[0124] Figure 10 is a diagram showing a state in which parts (AP) using an anodic oxide film (AL) are classified by location.

[0125] The component (AP) using an anodic oxide film (AL) has a difference in the configuration in which the first to third layers (101, 102, 103) are overlapped at different locations on the anodic oxide film (AL). This is implemented by, as an example, a step of sequentially forming the first layer (101) to the third layer (103) in the first to third regions (F1, F2, F3) of the entire upper surface of the anodic oxide film (AL) by moving the anodic oxide film (AL) to one side with respect to the atomic layer deposition head (1000) in a method for manufacturing a component (AP) using an anodic oxide film (AL).

[0126] Referring to Fig. 10, a component (AP) using an anodic oxide film (AL) can be divided into positions 1 to 6 (SC1, SC2, SC3, SC4, SC5, SC6) as an example.

[0127] The first position (SC1) corresponds to section A of FIG. 10, and is a position where the first to third layers (101, 102, 103) are not provided on the anodic oxide film (AL). The second position (SC2) corresponds to section B of FIG. 10, and is a position where the first layer (101) is provided on the anodic oxide film (AL), but the second layer (102) and the third layer (103) are not provided on the first layer (101). The third position (SC3) corresponds to section C of FIG. 10, and is a position where the first and second layers (101, 102) are provided on the anodic oxide film (AL), but the third layer (103) is not provided on the second layer (102). The fourth position (SC4) corresponds to section D of FIG. 10, and is a position where the first to third layers (101, 102, 103) are provided on the anodic oxide film (AL). The fifth position (SC5) corresponds to section E of Fig. 10, and is a position where the second and third layers (102, 103) are provided on the anodic oxide film (AL), but the first layer (101) is not provided. The sixth position (SC6) corresponds to section F of Fig. 10, and is a position where the third layer (103) is provided on the anodic oxide film (AL), but the first and second layers (101, 102) are not provided.

[0128] Among the entire areas of the upper surface of the anodic oxide film (AL), the first area (F1) is the second to fourth positions (SC2, SC3, SC4) corresponding to sections B to D of FIG. 10, the second area (F2) is the third to fifth positions (SC3, SC4, SC5) corresponding to sections C to E of FIG. 10, and the third area (F3) is the fourth to sixth positions (SC4, SC5, SC6) corresponding to sections D to F of FIG. 10.

[0129] Fig. 11 is a diagram illustrating a first modified example (TS1) of a component (AP) using an anodic oxide film (AL).

[0130] A component (AP) using an anodic oxide film (AL) may or may not have a void space in a pore (PR) having the first to third layers (101, 102, 103) inside in some areas where the first to third layers (101, 102, 103) all overlap. This may be provided differently depending on the diameter of the pore (PR).

[0131] A component (AP) using an anodic oxide film (AL) according to a preferred embodiment of the present invention illustrated in FIG. 10 may have an empty space in a pore (PR) in a certain area (the fourth position (SC4) in FIG. 10) where all of the first to third layers (101, 102, 103) overlap, for example.

[0132] In contrast, the first modified example (TS1) illustrated in FIG. 11 does not have an empty space inside the pore (PR) in some areas where the first to third layers (101, 102, 103) all overlap. In this case, the pore (PR) of the first modified example (TS1) may have a relatively small diameter.

[0133] The first modified example (TS1) is manufactured by sequentially performing the steps of forming a first layer (101) on an anodic oxide film (AL), forming a second layer (102) to overlap with the first layer (101), and forming a third layer (103) to overlap with the third layer (103).

[0134] Accordingly, the first to third layers (103) are provided inside the pores (PR) included in the overlapping areas of the first region (F1) where the first layer (101) is formed, the second region (F2) where the second layer (102) is formed, and the third region (F3) where the third layer (103) is formed. Since the diameter of the pores (PR) of the first modified example (TS1) is provided to be relatively small, the pores (PR) included in the overlapping areas of the first to third regions (F1, F2, F3) are filled by the first to third layers (101, 102, 103) and do not have empty spaces.

[0135] Specifically, in the region where the first to third regions (F1, F2, F3) of the first modified example (TS1) overlap, the first layer (101) is directly deposited on the inner surface of the pore (PR) and provided inside the pore (PR). Inside the pore (PR), the second layer (102) covers the first layer (101) and is deposited on the outer side of the second layer (102). Inside the pore (PR), the third layer (103) covers the second layer (102) and is deposited on the outer side of the second layer (102). As an example, the interior of the pore (PR) can be gradually filled by sequentially depositing the interior of the first layer (101b), the interior of the second layer (102b) covering the interior of the first layer (101b), and the interior of the third layer (103b) covering the interior of the second layer (102b).

[0136] The third layer (103) is provided so as not to touch the first layer (101) by the second layer (102).

[0137] In the overlapping region of the first to third regions (F1, F2, F3) of the first modified example (TS1), the first to third layers (101, 102, 103) are sequentially deposited and formed inside the pore (PR), so that the empty space inside the pore (PR) can be gradually filled. Accordingly, the first modified example (TS1) can be formed in a form in which the pore (PR) is filled through the first to third layers (101, 102, 103) without forming an empty space inside the pore (PR) in the overlapping region of the first to third regions (F1, F2, F3).

[0138] Fig. 12 is a diagram showing a second modified example (TS2) of a component (AP) using an anodic oxide film (AL), and Fig. 13 is a diagram showing an enlarged view of some pores (PR) of Fig. 12.

[0139] Referring to FIGS. 12 and 13, the second modified example (TS2) is a structure in which the height dimension of the anodic oxide film (AL) is increased, thereby increasing the aspect ratio of the height and length of the anodic oxide film (AL). The second modified example (TS2) can increase the capacity of the electric energy storage space by increasing the aspect ratio of the height and length of the anodic oxide film (AL).

[0140] The second modified example (TS2) has a vertical height of the anodic oxide film (AL) as a second height (h2). The second height (h2) may preferably be 60 ㎛ or more and 200 ㎛ or less.

[0141] When the height dimension of the anodic oxide film (AL) is large, the first to third layers (101, 102, 103) provided inside the pore (PR) are preferably deposited only on a part of the inside of the pore (PR). More preferably, the first to third layers (101, 102, 103) are deposited only on a part of the side surface of the inside surface of the pore (PR).

[0142] Referring to FIG. 13, a pore (PR) equipped with only the first layer (101), a pore (PR) equipped with only the first and second layers (101, 102), and a pore (PR) equipped with all of the first to third layers (101, 102, 103) are sequentially illustrated from the left side of the drawing.

[0143] The pore (PR) having only the first layer (101) may preferably be a pore (PR) included in a portion of the first region (F1) that does not overlap with the second and third regions (F2, F3). The first layer (101) is provided inside the pore (PR) and is deposited on a portion of the side surface of the inner surface of the pore (PR).

[0144] A pore (PR) equipped only on the first and second floors (101, 102) may be a pore (PR) included in a part of the second area (F2) that overlaps with the first area (F1) but does not overlap with the third area (F3).

[0145] A pore (PR) having all of the first to third layers (101, 102, 103) may be a pore (PR) included in an area where all of the first to third areas (F1, F2, F3) overlap.

[0146] Referring to FIGS. 12 and 13, in the second modified example (TS2), the first layer (101) is not deposited up to the bottom surface located in the opposite direction to the opening of the pore (PR), but is deposited only on a part of the side surface of the pore (PR). The first layer (101) is deposited on the upper region of the side surface of the pore (PR) excluding the lower region close to the bottom surface. Here, the upper region of the side surface of the pore (PR) refers to a part of the region existing from a position spaced apart at a certain height from the bottom surface of the pore (PR) toward the opening of the pore (PR). The lower region of the side surface of the pore (PR) refers to the remaining region existing up to a position spaced apart at a certain height from the bottom surface of the pore (PR).

[0147] In the second region (F2), first and second layers (101, 102) are provided on a part of the side surface of the pore (PR) inside the pore (PR) included in a part of the region overlapping with a part of the first region (F1). The second layer (102) is provided to cover the first layer (101) inside the pore (PR) so that it is not exposed. Specifically, the second layer (102) covers the first layer (101) inside the pore (PR) and is provided by being deposited deeper than the first layer (101) in the direction in which the bottom surface of the pore (PR) is located. Accordingly, the end of the second layer (102) located in the direction in which the bottom surface of the pore (PR) is located is relatively closer to the bottom surface of the pore (PR) than the end of the first layer (101).

[0148] Inside a pore (PR) included in a portion of a region where the first to third regions (F1, F2, F3) overlap, the first to third layers (101, 102, 103) are all provided on a portion of a side surface of the pore (PR). The third layer (103) is provided by being deposited shallower inside the pore (PR) than the second layer (102) covering the first layer (101). Accordingly, the end of the second layer (102), which is located in the direction in which the bottom surface of the pore (PR) is located, is provided in an exposed state inside the pore (PR).

[0149] The second variation example (TS2) is provided by depositing the second layer (102) deeper into the pore (PR) than the first layer (101) in some area where the first to third areas (F1, F2, F3) all overlap, and depositing the third layer (103) shallower into the pore (PR) than the second layer (102).

[0150] More specifically, the inside of the pore (PR) is provided by depositing the inside of the second layer (102b) deeper into the pore (PR) than the inside of the first layer (101b), and the inside of the third layer (103b) is provided by depositing the inside of the pore (PR) shallower than the inside of the second layer (102b).

[0151] As a result, the second variant example (TS2) has a structure in which the first layer (101) and the third layer (103) do not come into contact with each other by the second layer (102).

[0152] Meanwhile, referring to FIG. 12, only the second and third layers (102, 103) are provided on some of the side surfaces of the pores (PR) inside the pores (PR) included in some areas where only the second and third areas (F2, F3) overlap. At this time, the third layer (103) may be deposited deeper or shallower into the pores (PR) than the second layer (102). As an example, in the second modified example (TS2), the third layer (103) is deposited deeper into the pores (PR) than the second layer (102). As a result, the end portion of the second layer (102) located in the direction where the bottom surface of the pores (PR) is located is provided in an unexposed form.

[0153] Fig. 14 is a diagram showing a third variation example (TS3) of a component (AP) using an anodic oxide film (AL), and Fig. 15 is a diagram showing an enlarged view of some pores (PR) of Fig. 13.

[0154] Referring to FIGS. 14 and 15, the third modified example (TS3) has a vertical height of the anodic oxide film (AL) as a second height (h2). The second height (h2) may preferably be 200 μm.

[0155] Referring to FIG. 15, a pore (PR) equipped with only the first layer (101), a pore (PR) equipped with only the first and second layers (101, 102), and a pore (PR) equipped with all of the first to third layers (101, 102, 103) are sequentially illustrated from the left side of the drawing.

[0156] In the third variation example (TS3), the first to third layers (101, 102, 103) are all provided inside the pore (PR) included in the region where the first to third regions (F1, F2, F3) all overlap. At this time, the first layer (101) is provided by being deposited on a part of the side surface of the pore (PR). The second layer (102) is provided by being deposited deeper into the pore (PR) than the first layer (101), and the third layer (103) is provided by being deposited deeper into the pore (PR) than the second layer (102). More specifically, the inside of the second layer (102b) is provided by being deposited deeper into the pore (PR) than the inside of the first layer (101b), and the inside of the third layer (103b) is provided by being deposited deeper into the pore (PR) than the inside of the second layer (102b).

[0157] Accordingly, the first layer (101) is covered by the second layer (102) and is not exposed inside the pore (PR), and the second layer (102) is covered by the third layer (103) and is not exposed.

[0158] In the third variation example (TS3), the first layer (101) is provided in an unexposed state by being completely covered by the second layer (102), and the third layer (103) is deposited on the outside of the second layer (102) that completely covers the first layer (101) to cover the second layer (102). Therefore, in the third variation example (TS3), the first and third layers (101, 103) are provided in a separated state without being in contact by the second layer (102). Therefore, the third variation example (TS3) may not cause a short circuit problem that occurs due to contact between the first and third layers (101, 103) through the second layer (102).

[0159] Fig. 16 is a drawing showing a fourth variation example (TS4) of a component (AP) using an anodic oxide film (AL), and Fig. 17 is a drawing showing an enlarged view of some pores (PR) of Fig. 16.

[0160] Referring to FIGS. 16 and 17, the fourth modified example (TS4) has a vertical height of the anodic oxide film (AL) as a second height (h2). The second height (h2) may preferably be 200 μm.

[0161] Referring to Figure 17, a pore (PR) equipped with only the first layer (101), a pore (PR) equipped with only the first and second layers (101, 102), and a pore (PR) equipped with all of the first to third layers (101, 102, 103) are sequentially illustrated from the left side of the drawing.

[0162] In the fourth variation example (TS4), the first to third layers (101, 102, 103) are all provided inside the pore (PR) included in the region where the first to third regions (F1, F2, F3) all overlap.

[0163] At this time, the first layer (101) is deposited and provided on a portion of the side of the pore (PR). The second layer (102) is deposited and provided more shallowly into the pore (PR) than the first layer (101), and the third layer (103) is deposited and provided more shallowly into the pore (PR) than the second layer (102).

[0164] Accordingly, the end of the first layer (101) located in the direction of the bottom surface of the pore (PR) inside the pore (PR) is located at the deepest position inside the pore (PR), the end of the second layer (102) is located at a shallower position than the end of the first layer (101), and the end of the third layer (103) is located at a shallower position than the end of the second layer (102).

[0165] Inside the pore (PR), the first layer (101) is provided so that the remaining portion, except for the end portion of the first layer (101) located in the direction of the bottom surface of the pore (PR), is covered by the second layer (102) and is not exposed. In addition, the second layer (102) is provided so that the remaining portion, except for the end portion of the second layer (102) located in the direction of the bottom surface of the pore (PR), is covered by the third layer (103) and is not exposed. More specifically, inside the pore (PR), the remaining portion, except for the end portion of the inside of the first layer (101b), is provided so that the remaining portion, except for the end portion of the inside of the first layer (101b), is covered by the inside of the second layer (102b) and is not exposed. In addition, the inside of the second layer (102b) is provided so that the remaining portion, except for the end portion, is covered by the inside of the third layer (103b) and is not exposed.

[0166] The length of the cross-section of the vertical projection area of ​​the second layer (102) on the first layer (101) inside the pore (PR) is longer than the length of the cross-section of the vertical projection area of ​​the third layer (103) on the first layer (101). Therefore, in the fourth variant example (TS4), the problem of the end of the first layer (101) exposed inside the pore (PR) and the third layer (103) coming into contact does not arise.

[0167]

[0168] Fig. 18 is a drawing showing a fifth modified example (TS5) of a component (AP) using an anodic oxide film (AL), and Fig. 19 is a drawing showing a surface cut along line A-A' of Fig. 18.

[0169] The fifth variation example (TS5) additionally includes a fourth layer (104) used to adjust the capacity of a component (AP) using an anodic oxide film (AL). The fourth layer (104) includes a fourth layer upper surface (104a) formed on a portion of the upper surface of the second layer upper surface (102a) and an upper surface of one end of the third layer upper surface (103a) in the fourth region (F4), and a fourth layer inner surface (104b) formed on the outer side of the second layer inner surface (102b) formed inside a pore (PR) included in the fourth region (F4). The fourth layer (104) is formed by continuously forming the fourth layer upper surface (104a) and the fourth layer inner surface (104b).

[0170] Components (AP) utilizing anodized aluminum (AL) are manufactured with a capacity to output the required rated value when used as a capacitor or battery. The smaller the error between the measured value and the required rated value of the component (AP) utilizing anodized aluminum (AL), the higher the quality of the product.

[0171] The fifth variation example (TS5) additionally includes a fourth layer (104) to minimize the error range between the required rated value and the measured value.

[0172] The fourth layer (104) is provided in the fourth region (F4). The fourth region (F4) is provided over a portion of an area where only the first and second regions (F1, F2) overlap and a portion of an area where the first to third regions (F1, F2, F3) overlap. The fourth region (F4) preferably includes a boundary region between a portion of the second region (F2) that overlaps only the first region (F1) and a portion of an area that overlaps all of the first to third regions (F1, F2, F3). More preferably, the fourth region (F4) is provided in a portion of the boundary region, a portion of the second region (F2) that overlaps only the first region (F1) adjacent to the boundary region, and a portion of an area that overlaps all of the first to third regions (F1, F2, F3) adjacent to the boundary region. The fourth region (F4) is preferably provided with an area smaller than the areas of the first to third regions (F1, F2, F3).

[0173] Accordingly, referring to FIG. 19, a portion of the fourth layer (104) overlaps with the first and second layers (101, 102), and the remaining portion overlaps with the first to third layers (101, 102, 103). The fourth layer (104) compensates for the error between the required rated value and the measured value through the portion overlapping with the first and second layers (101, 102, 103).

[0174] Specifically, the fourth layer (104) is deposited in the fourth region (F4) and formed on top of a portion of the second layer (102). When the fourth layer (104) is initially formed, it is preferably formed with an area corresponding to the required rated value and the first error value of the measured value.

[0175] When manufacturing a fifth modified example (TS5) by a method for manufacturing a part (AP) using an anodic oxide film (AL), the steps of forming the first to third layers (101, 102, 103) may be sequentially performed, and then the step of measuring the rated value may be performed.

[0176] In the step of measuring the rated value, the rated value of a component (AP) using an anodic oxide film (AL) having first to third layers (101, 102, 103) is measured. Then, if the measured value is lower than the required rated value, a step of forming a fourth layer (104) in the fourth area (F4) is performed.

[0177] The fourth layer (104) can be formed based on the required rated value and the first error value of the measured value. The fourth layer (104) is formed with an area corresponding to the required rated value and the first error value of the measured value. The fourth layer (104) is formed with an area corresponding to the first error value, and compensates for the first error value between the required rated value and the measured value through the overlapping portion with the first and second layers (101, 102).

[0178] Then, a step of re-measuring the rated value of a component (AP) using an anodic oxide film (AL) having first to third layers (101, 102, 103) and a fourth layer (104) corresponding to the first error value is performed.

[0179] If the remeasured value is lower than the required rated value, a step of additionally forming a fourth layer (104') having an area corresponding to the second error value of the remeasured value and the required rated value may be performed. As the fourth layer (104') having an area corresponding to the second error value is additionally formed, the size of the area of ​​the fourth layer (104) formed in the fourth region (F4) on the upper part of a portion of the second layer (102) may increase.

[0180] The fifth variation example (TS5) compensates for the second error value between the required rated value and the measured value through the overlapping portion of the first and second layers (101, 102) among the fourth layer (104') of the area corresponding to the second error value.

[0181] In a method for manufacturing a component (AP) using an anodic oxide film (AL), if the measured rated value is lower than the required rated value after the first to third layers (101, 102, 103) are formed, a step of forming a fourth layer (104) in a fourth region (F4) with an area corresponding to the error value between the required rated value and the measured rated value may be additionally performed. The step of forming the fourth layer (104) in the fourth region (F4) may be performed multiple times while increasing the size of the area of ​​the fourth layer (104) until the required rated value is output.

[0182] In this way, the fifth variation example (TS5) can gradually compensate for the error value between the required rated value and the measured value through the fourth layer (104) and output the required rated value.

[0183] As described above, the present invention has been described with reference to preferred embodiments thereof, but it will be apparent to those skilled in the art that various modifications or variations may be made to the present invention without departing from the spirit and scope of the present invention as set forth in the following claims.

[0184] [Explanation of symbols]

[0185] *Major symbols in the drawing

[0186] AP: Components using anodic oxide

[0187] AL: Anodic oxide film

[0188] PR: Fore

[0189] 101: First floor

[0190] 102: 2nd floor

[0191] 103: Third floor

[0192] 104: 4th floor

[0193] 1000: Atomic Layer Deposition Head

[0194] 1001: Deposition Department

[0195] 1002: Pumping section

[0196] 1003: Air curtain section

Claims

1. A method for manufacturing a part using an anodic oxide film by depositing an atomic layer on an anodic oxide film using an atomic layer deposition head, A step of forming a first layer on the anodic oxide film using the atomic layer deposition head; A step of forming a second layer on a part of the first layer to overlap with the first layer after relatively moving at least one of the atomic layer deposition head and the anodic oxide film; and A method for manufacturing a component using an anodic oxide film, comprising: forming a third layer on a portion of the upper surface of the second layer to overlap with the second layer after relatively moving at least one of the atomic layer deposition head and the anodic oxide film; 2. In paragraph 1, A method for manufacturing a component using an anodic oxide film, wherein the second layer is provided between the first layer and the third layer so that the first layer and the third layer do not touch each other.

3. In paragraph 1, The above anodic oxide film has pores, A method for manufacturing a part using an anodic oxide film, wherein at least a portion of the first layer, the second layer, and the third layer are provided inside the pore.

4. In paragraph 1, The above atomic layer deposition head, A deposition unit that deposits an atomic layer; A pumping unit provided around the deposition unit to exhaust gas sprayed from the deposition unit; and Including an air curtain section provided around the above pumping section to form an air curtain by spraying purge gas; A method for manufacturing a component using an anodic oxide film, wherein the first layer to the third layer are formed while the atomic layer deposition region and its exterior are isolated from each other.

5. An anodic oxide film having a large number of pores; A first layer formed in the first region of the above anodic oxide film; A second layer that overlaps only partially with the first region; and A component using an anodic oxide film, comprising a third layer that overlaps only a portion of the first region and a portion of the second region.

6. In paragraph 5, The first layer and the third layer are electrode layers, The second layer above is a dielectric layer, a component using an anodic oxide film.

7. In paragraph 5, The first layer and the third layer are electrode layers, The second layer above is an electrolyte layer, a component using an anodic oxide film.

8. In paragraph 5, There is a difference in the configuration in which the first to third layers are overlapped depending on the position on the above anodic oxide film. A first position where the first layer to the third layer are not provided on the anodic oxide film; A second position in which the first layer is provided on the anodic oxide film, but the second layer and the third layer are not provided on the first layer; A third position in which the first layer and the second layer are provided on the anodic oxide film, but the third layer is not provided on the second layer; A fourth position having the first layer to the third layer on the anodic oxide film; A fifth position having the second layer and the third layer on the anodic oxide film, but not having the first layer; and A sixth position having the third layer on the anodic oxide film, but not having the first layer and the second layer; The above first region is the second position to the fourth position, The above second region is the third position to the fifth position, The above third region is a component using an anodic oxide film, which is the fourth position to the sixth position.

9. In paragraph 5, Within the above pore, the first layer is deposited only on a portion of the interior of the pore, A component using an anodic oxide film in which the second layer covers the first layer so that it is not exposed within the pore, and the first layer does not come into contact with the third layer.

10. In paragraph 5, Within the above pore, the first layer is deposited only on a portion of the interior of the pore, Within the pore, the second layer is deposited deeper into the pore than the first layer, A component using an anodic oxide film, wherein the third layer is deposited deeper into the pore than the second layer within the pore.

11. In paragraph 5, Within the above pore, the first layer is deposited only on a portion of the interior of the pore, Within the pore, the second layer is deposited more shallowly within the pore than the first layer, A component using an anodic oxide film, wherein the third layer is deposited more shallowly inside the pore than the second layer.

12. In paragraph 5, A component using an anodic oxide film, further comprising a fourth layer formed on top of the second layer and used to adjust the capacity of the component.

13. An anodic oxide film having a large number of fine pores on the upper surface and from the upper surface to the inside; A first layer including a first layer upper surface formed on the upper surface of the above anodic oxide film and an interior of the first layer formed inside the pore, wherein the first layer upper surface and the interior of the first layer are formed continuously; A second layer including a second layer upper surface formed on a portion of the upper surface of the first layer and the upper surface of the anodic oxide film so that one side of the upper surface of the first layer is exposed and the other side of the upper surface of the first layer is not exposed, and an interior of the second layer formed inside the pore, wherein the upper surface of the second layer and the interior of the second layer are formed continuously; and A component using an anodic oxide film, comprising a third layer formed on a portion of the upper surface of the second layer and the upper surface of the anodic oxide film so that one side of the upper surface of the second layer is exposed and the other side of the upper surface of the second layer is not exposed, and a third layer formed inside the pore, wherein the upper surface of the third layer and the interior of the third layer are formed continuously.

14. In paragraph 13, Among the above multiple pores, Some pores do not have the first, second and third layers, Some pores are equipped with only the first layer, Some pores are equipped with only the third layer, Some pores are equipped with only the first and second layers, Some pores are equipped with only the second and third layers, The remaining pores are parts using an anodic oxide film, which are provided with the first layer, the second layer, and the third layer.

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