Substrate processing apparatus and substrate processing method

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method, and comprises: a chamber providing a processing space in which a processing process for a substrate is performed; a substrate support unit provided in a lower portion of the inside of the chamber to support the substrate; a lower shower head provided below the substrate support unit to supply cleaning gas or process gas; and an upper heater which is provided in an upper portion of the inside of the chamber to supply purge gas and has a protective film.

Description

Substrate processing device and substrate processing method

[0001] The present invention relates to a substrate processing device and a substrate processing method, and more specifically, to a substrate processing device and a substrate processing method that can prevent particle generation and effectively clean the inside of a chamber even in a high-temperature process.

[0002] A substrate processing device according to a prior art deposits a thin film of a predetermined thickness on one surface of a substrate, for example, the upper surface of the substrate. In this case, when the thin film is deposited overlappingly on the upper surface of the substrate, the stress of the thin film may cause bowing of the substrate.

[0003] When the substrate bows in this way, it becomes difficult to position the substrate in the correct position during subsequent substrate processing processes. In particular, the precision of substrate processing processes is increasing day by day, and this bowing phenomenon reduces the precision of the processing process. Therefore, in order to prevent the aforementioned substrate bowing phenomenon, a thin film of a predetermined thickness is deposited on the lower surface of the substrate to prevent the bowing phenomenon.

[0004] This substrate processing device is equipped with an upper heater that supplies purge gas, etc. to the upper portion of the substrate, and further includes a lower shower head that supplies process gas to the lower portion of the substrate. In this configuration, when cleaning the interior of the chamber, the substrate processing device according to the prior art supplies cleaning gas, for example, NF3, in the form of remote plasma through the upper heater made of AlN material.

[0005] In this way, when supplying cleaning gas through the upper heater, particles are not a problem in chambers that have undergone low-temperature processes of approximately 400°C or less. However, in recent chambers that have undergone high-temperature processes of approximately 400°C or more, when supplying NF3 or the like, particles can become a problem due to the generation of AlF or the like inside the upper heater by the reaction between NF3 and AlN.

[0006] To address this, conventional substrate processing devices have employed a technique for supplying cleaning gas from the upper portion of the chamber along the side of the upper heater. However, this method has the problem that the supplied cleaning gas is directly exhausted through the exhaust port at the bottom of the chamber and is not supplied to the center of the upper heater or lower showerhead. This results in a longer cleaning time for cleaning the center of the upper heater or lower showerhead, and furthermore, there is a problem that the surface of the upper heater or lower showerhead is not cleaned uniformly.

[0007] In addition, in the past, in order to clean the inside of the chamber, the temperature of the upper heater was lowered to below 400°C in a chamber that had undergone a high-temperature process of approximately 400°C or higher, thereby preventing the generation of AlF, etc. in the aforementioned upper heater. However, this method required time to lower the temperature of the upper heater to perform the cleaning process and then raise the temperature of the upper heater to the process temperature, i.e., a temperature of approximately 400°C or higher, which significantly reduced the throughput of the substrate processing device.

[0008] The present invention aims to solve the above-mentioned problems by providing a substrate processing device and a substrate processing method capable of effectively cleaning the surface of a lower shower head inside a chamber even in a high-temperature process.

[0009] The above object of the present invention can be achieved by a substrate processing device characterized by comprising a chamber providing a processing space in which a processing process for a substrate is performed, a substrate supporter provided at a lower portion of the chamber to support the substrate, a lower shower head provided at a lower portion of the substrate supporter to supply a cleaning gas or a processing gas, and an upper heater provided at an upper portion of the chamber to supply a purge gas and having a protective film formed thereon.

[0010] Additionally, the upper heater and the lower shower head may be provided to be able to move relative to each other.

[0011] Furthermore, the protective film may be composed of a SiON film.

[0012] Meanwhile, the protective film may be formed on the surface and side of the upper heater facing the lower shower head.

[0013] Additionally, when performing a cleaning step for cleaning the inside of the chamber, the thickness of the protective film can be determined so that the protective film is completely removed at the end of the cleaning step.

[0014] Furthermore, an additional supply path for supplying purge gas through the upper edge of the chamber is further provided, and the ratio of the flow rate of the cleaning gas supplied through the lower shower head to the flow rate of the purge gas supplied through the upper heater and the additional supply path during the cleaning process for the substrate may be approximately 20 to 40%.

[0015] Meanwhile, the above-described object of the present invention can be achieved by a substrate processing method of a substrate processing device having a lower shower head provided inside a chamber to supply a cleaning gas or a process gas, and an upper heater provided at an upper portion of the interior of the chamber to supply a purge gas, characterized in that it includes a step of supplying a protective film deposition gas through the lower shower head to deposit a protective film on the upper heater.

[0016] In addition, following the step of depositing the protective film, a step of cleaning the inside of the chamber by supplying the cleaning gas through the lower shower head may be further included.

[0017] In this case, the cleaning gas contains fluorine radicals, the surface of the upper heater contains aluminum, and the protective film can block contact between the cleaning gas and the upper heater.

[0018] Furthermore, the thickness of the protective film can be determined so that the protective film is completely removed at the end of the cleaning step.

[0019] Additionally, the above cleaning step can be performed until the above protective film is completely removed.

[0020] Meanwhile, the thickness of the protective film can be determined by controlling at least one of the flow rate of the cleaning gas supplied through the lower shower head, the flow rate of the purge gas supplied through the upper heater, and the distance between the lower shower head and the upper heater.

[0021] In addition, an additional supply path for supplying purge gas through the upper edge of the chamber is further provided, and the flow rate ratio of the cleaning gas supplied through the lower shower head to the flow rate of the purge gas supplied through the upper heater and the additional supply path during the cleaning process for the substrate may be approximately 20 to 40%.

[0022] Furthermore, prior to the step of depositing the protective film, a step of supplying the process gas to the lower surface of the substrate through the lower shower head is further included, and the purge gas supplied through the upper heater in the step of depositing the protective film, the step of supplying the process gas to the lower surface of the substrate, and the step of cleaning may be different.

[0023] Meanwhile, the protective film may be composed of a SiON film.

[0024] According to the present invention having the above-described configuration, a protective film is deposited on the upper heater and a cleaning gas is provided through the lower shower head to effectively clean the central portion of the lower shower head.

[0025] Figure 1 is a side cross-sectional view of a substrate processing device according to one embodiment of the present invention;

[0026] Figure 2 is a side view showing only the upper heater.

[0027] Figure 3 is an enlarged view showing only a portion of the upper shower head plate.

[0028] Figure 4 is a flowchart illustrating a substrate processing method according to one embodiment of the present invention.

[0029] Fig. 5 is a side cross-sectional view showing a state in which purge gas or cleaning gas is supplied in the substrate processing device according to Fig. 1.

[0030] Figure 6 is a graph showing the results of an experiment in which the number of particles attached to the substrate was confirmed after cleaning the chamber by changing the ratio of the flow rate of the cleaning gas supplied through the lower shower head to the flow rate of the purge gas supplied through the upper heater and additional supply path.

[0031] Figure 7 is a side view of the substrate processing device showing the concentration of NF3 radicals supplied through the lower shower head.

[0032] Figure 8 is an enlarged view showing only a portion of the upper shower head plate after the cleaning step has been completed.

[0033] Figure 9 is a block diagram comparing the sequence of a substrate processing process according to the prior art and a substrate processing process according to the present invention.

[0034] Hereinafter, the structure of a substrate processing device (1000) according to an embodiment of the present invention will be examined in detail with reference to the drawings.

[0035] FIG. 1 is a side cross-sectional view of a substrate processing device (1000) according to one embodiment of the present invention.

[0036] Referring to FIG. 1, the substrate processing device (1000) may include a chamber (100) that provides a processing space (110) where a processing process for a substrate (S) is performed, a substrate support unit (400) provided at a lower portion inside the chamber (100) to support the substrate (S), a lower shower head (430) provided at a lower portion of the substrate support unit (400) to supply a cleaning gas or a processing gas, and an upper heater (200) provided at an upper portion inside the chamber (100) to supply a purge gas and having a protective film (240) (see FIG. 2) formed thereon.

[0037] Specifically, the chamber (100) can provide a processing space (110) on the inside where various components required for a deposition process for the substrate (S) are accommodated.

[0038] One side of the chamber (100) may be provided with an opening (not shown) through which the substrate (S) is loaded into or unloaded from the processing space (110), and a door (not shown) may be provided in the above-described opening.

[0039] The upper portion of the chamber (100) may be provided with an upper heater (200) that supplies a purge gas, such as an inert gas, toward the upper surface of the substrate (S). The upper heater (200) may be made of, for example, AlN material.

[0040] Meanwhile, an upper supply path (220) through which purge gas is supplied may be connected to the upper portion of the chamber (100). The purge gas supplied along the upper supply path (220) may be supplied to the lower portion via the upper heater (200).

[0041] The purge gas supplied from the upper heater (200) is supplied toward the lower processing space (110), thereby preventing the cleaning gas or process gas supplied from the lower shower head (430) from flowing into the upper heater (200).

[0042] Specifically, the upper heater (200) may include a heater plate (230) and an upper showerhead plate (210) provided below the heater plate (230). A first buffer space (214) may be provided between the heater plate (230) and the upper showerhead plate (210).

[0043] The above heater plate (230) has a heater (not shown) on the inside to heat the substrate (S) and the processing space (110) to a predetermined process temperature.

[0044] Meanwhile, a plurality of first supply holes (212) may be formed in the upper shower head plate (210).

[0045] Accordingly, the purge gas supplied through the upper supply path (220) can be diffused in the first buffer space (214) and supplied downward through the first supply hole (212) of the upper showerhead plate (210).

[0046] Meanwhile, the upper heater (200) and the lower shower head (430) may be provided to be able to move relative to each other. In this case, the lower shower head (430) moves together with the substrate support member (400), so the upper heater (200) and the substrate support member (400) may be provided to be able to move relative to each other.

[0047] Both the upper heater (200) and the lower substrate support member (400) may be provided to be able to move up and down, or at least one of the upper heater (200) and the lower substrate support member (400) may be provided to be able to move up and down. For example, the upper heater (200) may be arranged to be able to move up and down, and the substrate support member (400) may be arranged to be fixed.

[0048] The substrate support member (400) can support the edge of the lower surface of the substrate (S) at the lower portion of the processing space (110). The lower shower head (430) described above is provided on the inside of the substrate support member (400), and cleaning gas or process gas can be supplied by the lower shower head (430). The substrate support member (400) can be connected to a connecting bar (470) extending downward.

[0049] Meanwhile, the substrate support part (400) may be provided with a substrate holder (410) that supports the edge of the lower surface of the substrate (S), and the lower shower head (430) described above may be provided on the inside of the substrate holder (410).

[0050] The above lower shower head (430) may be equipped with a lower shower head plate (431) and a lower plate (450) in which a heat exchange path (not shown) is formed.

[0051] In this case, the substrate holder (410) can be supported by a fixing member (420) whose lower end is connected to the lower plate (450).

[0052] The above substrate holder (410) may be formed to extend upward from the fixing member (420), and may have a shape in which the upper end of the substrate holder (410) is bent inward.

[0053] In this case, a concave portion (416) may be formed at the upper end of the substrate holder (410). Therefore, when the substrate (S) is placed on the substrate holder (410), the substrate (S) may be inserted into the concave portion (416) to support the lower surface of the edge of the substrate (S).

[0054] Meanwhile, cleaning gas or process gas can be supplied to the lower shower head (430) through the lower supply passage (474) passing through the connecting bar (470).

[0055] The lower showerhead (430) is provided with a second buffer space (432), and the second buffer space (432) may be provided between the lower showerhead plate (431) and the lower plate (450). Although not shown in the drawing, a baffle or blocking plate for gas dispersion may be inserted between the lower showerhead plate (431) and the lower plate (450) or in the buffer space (432).

[0056] Meanwhile, a heat exchange path (not shown) is formed in the lower plate (450), and a heat exchange fluid or the like flows along the heat exchange path to control the temperature of the process gas or the inside of the chamber (100) through heat exchange.

[0057] In addition, the lower plate (450) may serve to support the lower showerhead plate (431) and the substrate holder (410). In this case, the lower showerhead plate (431) may be connected to the upper surface of the lower plate (450). In addition, the fixing member (420) supporting the lower end of the substrate holder (410) may be connected to the lower plate (450).

[0058] At this time, the fixing portion (420) may be provided in multiple numbers and spaced apart at predetermined intervals along the outer circumference of the lower plate (450). That is, when the fixing portion (420) is provided in multiple numbers, the space between adjacent fixing portions (420) may be opened downwards to communicate with the interior of the chamber (100). Accordingly, the space between the side surface of the lower showerhead plate (431), the side surface of the lower plate (450), and the inner surface of the substrate holder (410) may form an exhaust passage (422).

[0059] In this case, some of the process gas supplied from the lower shower head (430) is discharged to the lower part of the chamber (100) through the exhaust path (422) and is exhausted to the outside of the chamber (100) through the exhaust part (490) provided at the lower part of the chamber (100).

[0060] Meanwhile, the purge gas supplied downward from the upper heater (200) can flow to the lower part of the chamber (100) and be discharged to the outside of the chamber (100) through the exhaust part (490).

[0061] Meanwhile, the substrate processing device (1000) may further include an additional supply path (310) for supplying purge gas through the upper edge of the chamber (100).

[0062] Meanwhile, the upper heater (200) according to the present invention can have a protective film (240) deposited on it. Fig. 2 is a side view showing only the upper heater (200), and Fig. 3 is an enlarged view showing only a portion of the upper showerhead plate (212).

[0063] Referring to FIGS. 1 to 3, a protective film (240) may be deposited on the upper heater (200) to prevent contact between a cleaning gas such as NF3 and the upper heater (200) made of AlN during cleaning inside the chamber (100), thereby preventing the generation of particles such as AlF.

[0064] The protective film (240) of the upper heater (200) may be deposited before the cleaning process for the substrate (S). For example, this may be performed by supplying a protective film deposition gas through the lower shower head (430).

[0065] In this case, the protective film (240) may be composed of, for example, a SiON film, and N2O and SiH4 gases may be supplied as protective film deposition gases through the lower shower head (430).

[0066] Even when depositing the protective film (240) on the upper heater (200), a purge gas such as an inert gas can be supplied through the upper heater (200) and the additional supply path (310). However, the inert gas supplied during the deposition of the protective film may be different from the inert gas supplied during the deposition process for the substrate (S) or the cleaning process for the chamber (100).

[0067] For example, when depositing the protective film (240) on the upper heater (200), an inert gas such as He or Ar, which facilitates plasma generation for protective film deposition, may be supplied. On the other hand, during a deposition process for the substrate (S) or a cleaning process for the chamber (100), N2 gas may be supplied as an inert gas.

[0068] In addition, the flow rate of the inert gas supplied during the deposition of the protective film and the flow rate of the inert gas supplied during the deposition process for the substrate (S) or the cleaning process for the chamber (100) may be different.

[0069] For example, when depositing a protective film, the protective film (240) must be deposited on the upper heater (200), so the flow rate of the inert gas supplied through the upper heater (200) and the additional supply path (310) may be relatively small. That is, the flow rate of the inert gas may be adjusted to a small extent so as not to interfere with the deposition of the protective film (240).

[0070] On the other hand, during a deposition process for the substrate (S) or a cleaning process for the chamber (100), the flow rate of the inert gas supplied through the upper heater (200) and the additional supply path (310) may be relatively increased to prevent the lower process gas or cleaning gas from coming into contact with the upper heater (200).

[0071] As a result, the protective film (240) can be deposited on the lower surface and side surface of the upper heater (200) as shown in Fig. 2. Here, the lower surface of the upper heater (200) corresponds to the surface facing the lower shower head (430).

[0072] Meanwhile, as shown in Fig. 2, it is preferable that the protective film (240) is not deposited on the upper surface of the upper heater (200).

[0073] If the protective film (240) is also deposited on the upper surface of the upper heater (200), it is difficult to remove the protective film deposited on the upper surface of the upper heater (200) during the cleaning process described later.

[0074] That is, during the cleaning process, radicals of the cleaning gas can be supplied in the form of remote plasma through the lower shower head (430), but since the radicals of the cleaning gas have a short lifespan, it is difficult for them to reach the upper surface of the upper heater (200). In addition, during the cleaning process, the radicals of the cleaning gas may not be able to reach the upper surface of the upper heater (200) due to the purge gas supplied from the upper side to the lower side, and as a result, it may be difficult to remove the protective film remaining on the upper surface of the upper heater (200).

[0075] In this way, if a protective film remains on the upper surface of the upper heater (200), it may act as particles, etc. in subsequent processes, and the protective film may continuously accumulate on the upper surface of the upper heater (200), ultimately reducing the heating performance of the upper heater (200).

[0076] Therefore, when depositing the protective film, it is desirable to prevent the protective film (240) from being deposited on the upper surface of the upper heater (200).

[0077] For example, when controlling the flow rate of the protective film deposition gas supplied through the lower shower head (430), the protective film deposition gas can be prevented from reaching the upper surface of the upper heater (200). Alternatively, when depositing the protective film through the upper heater (200), the flow rate of the inert gas supplied from the upper heater (200) can be controlled so that the protective film deposition gas does not reach the upper surface of the upper heater (200).

[0078] Meanwhile, when the protective film (240) is formed on the lower surface of the upper heater (200) as illustrated in FIG. 3, the protective film (240) may not be deposited on the inner side of the first supply hole (212). This is because the diameter of the first supply hole (212) is very small, and also because a purge gas such as an inert gas is supplied downward through the first supply hole (212).

[0079] Hereinafter, a substrate processing method in a substrate processing device (1000) having the above-described configuration will be examined.

[0080] Figure 4 is a flowchart illustrating the above substrate processing method.

[0081] Referring to FIG. 4, the substrate processing method may include a step (S410) of supplying a process gas to the lower surface of the substrate (S) through the lower shower head (430), a step (S430) of supplying a protective film deposition gas through the lower shower head (430) to deposit the protective film (240) on the upper heater (200), and a step (S450) of supplying a cleaning gas through the lower shower head (430) to clean the inside of the chamber (100).

[0082] The above substrate treatment method can be repeatedly performed as one process set, comprising the deposition step (S410) on the lower surface of the substrate (S), the protective film deposition step (S430), and the cleaning step (S450) of the chamber (100).

[0083] Additionally, although not shown in the drawing, the protective film deposition step may not be included in each process set. For example, the deposition step on the substrate (S) and the cleaning step of the chamber (100) may be performed multiple times, followed by the protective film deposition step.

[0084] Below, the above substrate processing method will be examined in detail.

[0085] First, a protective film can be deposited on the upper heater (200). For example, in the substrate processing device (1000) of FIG. 1, a protective film deposition gas can be supplied through the lower shower head (430) to deposit a protective film on the upper heater (200).

[0086] Meanwhile, prior to the step of depositing the protective film, the deposition step may be performed by supplying a process gas to the lower surface of the substrate (S). In this case, in order to deposit a thin film on the lower surface of the substrate (S), the necessary process gas may be supplied to the lower surface of the substrate (S) through the lower shower head (430). Furthermore, plasma may be provided if necessary during the deposition step.

[0087] Hereinafter, the step of depositing a protective film on the upper heater (200) will be specifically examined. In this case, a purge gas such as an inert gas can be supplied downward through the upper heater (200) and the additional supply path (310).

[0088] In this case, the protective film (240) may be composed of, for example, a SiON film, and N2O and SiH4 gases may be supplied as protective film deposition gases through the lower shower head (430). In addition, plasma may be provided to facilitate the deposition of the protective film (240) more smoothly.

[0089] Meanwhile, the inert gas supplied during the deposition of the protective film may be an inert gas, such as He or Ar, which facilitates plasma generation for the deposition of the protective film. In addition, the flow rate of the inert gas may be relatively small compared to the flow rate of the inert gas supplied during the deposition process for the substrate (S) or the cleaning process for the chamber (100). As this has been described above, a repeated explanation will be omitted.

[0090] Through the steps described above, as shown in FIGS. 2 and 3, a protective film (240) can be deposited on the lower surface and side surface of the upper heater (200).

[0091] Meanwhile, the thickness (t) of the protective film (240) (see FIG. 3) can be determined as a value at which the protective film (240) is completely removed at the end of the cleaning step described below.

[0092] For example, if the protective film (240) is completely removed before the cleaning step is completed, the cleaning gas may come into contact with the upper heater (200) during the cleaning step, which may generate AlF particles. On the other hand, if the protective film (240) remains on the upper heater (200) even after the cleaning step is completed, the protective film (240) may act as a factor in generating particles during the subsequent deposition step of the substrate (S).

[0093] The thickness (t) of the protective film (240) is not limited to a specific value in the present invention. However, the thickness of the protective film (240) may be determined in consideration of the conditions of the cleaning process of the chamber (100).

[0094] For example, in the cleaning step, it can be determined by conditions such as the flow rate of the cleaning gas supplied through the lower shower head (430), the flow rate of the purge gas supplied through the upper heater (200), and the distance between the lower shower head (430) and the upper heater (200). Consequently, the thickness of the protective film (240) can be determined by adjusting at least one of the flow rate of the cleaning gas supplied through the lower shower head (430), the flow rate of the purge gas supplied through the upper heater (200), and the distance between the lower shower head (430) and the upper heater (200).

[0095] As an example, the distance between the lower shower head (430) and the upper heater (200) may be separated as much as possible, and the flow rate of the cleaning gas supplied through the lower shower head (430) may be determined and supplied at a predetermined flow rate. In this case, by controlling the flow rate of the purge gas supplied through the upper heater (200) and the additional supply path (310), the thickness value at which the protective film (240) is completely removed at the time the cleaning step is completed may be confirmed.

[0096] After confirming the required thickness of the protective film (240), the thickness of the protective film (240) deposited on the upper heater (200) can be adjusted to the required thickness by adjusting the flow rate of the protective film deposition gas supplied from the lower shower head (430) in the protective film (240) deposition step.

[0097] Following the step of depositing a protective film on the upper heater (200), the interior of the chamber (100) can be cleaned.

[0098] When cleaning the interior of the chamber (100), cleaning gas may be supplied through the lower shower head (430), and purge gas such as an inert gas may be supplied through the upper heater (200) and an additional supply path (310). The step of cleaning the interior of the chamber (100) may be performed until the protective film (240) is completely removed.

[0099] Figure 5 illustrates the gas supplied through the additional supply path (310), upper heater (200), and lower shower head (430) during the cleaning process for the chamber (100) using arrows.

[0100] Referring to FIG. 5, the additional supply path (310) may be provided at the upper edge of the chamber (100). For example, when a chamber lid (not shown) is provided at the upper portion of the chamber (100), the additional supply path (310) may be provided at the edge of the chamber lid. A plurality of the additional supply paths (310) may be provided along the upper edge of the chamber (100).

[0101] During the cleaning process of the chamber (100), a purge gas composed of an inert gas or the like can be supplied through the additional supply path (310). In addition, during the cleaning process of the chamber (100), a purge gas can also be supplied through the upper heater (200). The purge gas can be composed of N2 gas or the like as described above.

[0102] The cleaning gas supplied from the lower shower head (430) can be prevented from flowing into the upper heater (200) by the purge gas supplied through the upper heater (200) and the additional supply path (310), thereby preventing it from acting as a particle. In particular, in the case of a high-temperature process of approximately 400°C or higher, remote plasma such as NF3 can be prevented from acting as a particle by forming AlF in the upper heater (200) made of AlN.

[0103] For example, during a cleaning process for the chamber (100), the ratio of the flow rate of the cleaning gas, such as NF3, supplied through the lower shower head (430) to the flow rate of the purge gas, such as N2, supplied through the upper heater (200) and the additional supply path (310) may be approximately 50% or less.

[0104] Alternatively, the ratio of the flow rate of the cleaning gas supplied through the lower shower head (430) to the flow rate of the purge gas supplied through the upper heater (200) and the additional supply path (310) may be approximately 20 to 40%, and preferably approximately 30 to 40%.

[0105] Fig. 6 is a graph showing the results of an experiment in which the number of particles attached to the substrate (S) was confirmed when the chamber (100) was cleaned by changing the ratio of the flow rate of the cleaning gas supplied through the lower shower head (430) to the flow rate of the purge gas supplied through the upper heater (200) and the additional supply passage (310), and then the substrate (S) was brought into the chamber (100). When the substrate (S) is brought in, the purge gas can be supplied through the upper heater (200) and the additional supply passage (310).

[0106] When performing cleaning on the chamber (100) in FIG. 6, the flow rates of the purge gas supplied through the upper heater (200) and the additional supply path (310) were each maintained at 10,000 sccm, and the flow rate of the cleaning gas supplied through the lower shower head (430) was changed.

[0107] In FIG. 6, 'A' corresponds to a case where the flow rate of the cleaning gas supplied through the lower shower head (430) is 7,000 sccm, 'B' corresponds to a case where the flow rate of the cleaning gas supplied through the lower shower head (430) is 5,000 sccm, and 'C' corresponds to a case where the flow rate of the cleaning gas supplied through the lower shower head (430) is 3,500 sccm.

[0108] Looking at Fig. 6, it can be seen that when the flow rate of the cleaning gas supplied through the lower shower head (430) is 7,000 sccm and 5,000 sccm, the number of particles attached to the substrate (S) when the substrate (S) is introduced is approximately 99 and 34, respectively. In addition, it can be seen that in this case, the particles attached to the substrate (S) directly transfer the pattern of the first supply hole (212) of the upper heater (200).

[0109] On the other hand, when the flow rate of the cleaning gas supplied through the lower shower head (430) is 3,500 sccm, it can be seen that the number of particles is significantly reduced to 23. In addition, in this case, it can be seen that the particles attached to the substrate (S) do not transfer the pattern of the first supply hole (212) of the upper heater (200).

[0110] Meanwhile, the purge gas supplied through the upper heater (200) and the additional supply path (310) can be exhausted to the outside of the chamber (100) through the exhaust part (490) provided at the lower part of the chamber (100).

[0111] Meanwhile, during the cleaning process of the chamber (100), remote plasma of NF3 gas can be supplied through the lower shower head (430).

[0112] Foreign substances such as particles or deposits on the surface of the lower shower head (430) can be effectively removed by this remote plasma.

[0113] Meanwhile, the concentration of NF3 radicals supplied through the lower shower head (430) may vary depending on the distance from the lower shower head (430).

[0114] Figure 7 is a schematic diagram of a substrate processing device (1000) showing the concentration of NF3 radicals supplied through the lower shower head (430).

[0115] In Fig. 7, the first space (S1), the second space (S2), and the third space (S3) visually show the concentration of the NF3 radical. That is, the area where the concentration of the NF3 radical is high is depicted relatively dark, and the area where the concentration of the NF3 radical is low is depicted relatively bright. In addition, the area between the lower shower head (430) and the upper heater (200) is divided into three spaces for explanation, but this is for convenience of explanation, and it is of course possible to divide it into fewer or more spaces.

[0116] Referring to Fig. 7, the first space (S1) directly above the lower shower head (430) may correspond to an area where the concentration of the NF3 radical is the highest. In the first space (S1), the cleaning effect, i.e., the etching effect, by the NF3 radical is the best, and the surface of the lower shower head (430) and the substrate support portion (400) can be cleaned.

[0117] Meanwhile, the concentration of the NF3 radical may decrease as one goes up from the first space (S1) to the upper heater (200). For example, the concentration of the NF3 radical may decrease as one goes up to the second space (S2) and third space (S3) located above the first space (S1).

[0118] In this case, the concentration of the NF3 radical may be the lowest in the third space (S3) directly below the upper heater (200). This is because the distance from the lower shower head (430) is the farthest, and also because purge gas is supplied downward from the upper heater (200).

[0119] In addition, the cleaning effect by the NF3 radical, i.e., the etching effect, also decreases as it goes up to the second space (S2) and the third space (S3), and the cleaning effect by the NF3 radical may be the lowest in the third space (S3) directly below the upper heater (200).

[0120] Accordingly, the NF3 radicals reaching the upper heater (200) in the third space (S3) cannot contact the upper heater (200) and can etch the protective film (240). In this case, since the upper heater (200) is not exposed until the cleaning step is completed as described above, the NF3 radicals do not react with the upper heater (200).

[0121] In addition, as shown in FIG. 8, at the point where the cleaning step is completed, the protective film (240) of the upper heater (200) is completely removed, so that the protective film (240) does not remain, and thus the protective film (240) does not act as a particle factor in the subsequent deposition process for the substrate (S).

[0122] That is, when the surface of the upper heater (200) includes aluminum and the cleaning gas includes fluorine radicals, the protective film (240) can prevent the cleaning gas from contacting the surface of the upper heater (200).

[0123] Fig. 9 is a block diagram comparing the sequence of a substrate processing process according to the prior art and a substrate processing process according to the present invention. The block diagram according to Fig. 9 (A) illustrates a substrate processing process according to the prior art, and the block diagram according to Fig. 9 (B) illustrates a substrate processing process according to the present invention.

[0124] As illustrated in (A) of FIG. 9, the substrate treatment process according to the prior art performs a step of lowering the temperature inside the upper heater (200) or chamber (100) below the process temperature after a deposition process having a high process temperature for depositing a thin film on the lower surface of the substrate. This is to prevent AlF, etc. from being generated in the upper heater. Here, the process temperature may be defined as a temperature higher than the temperature at which a cleaning gas such as NF3 reacts with the lower shower head (430) to generate a reaction byproduct such as AlF. For example, the process temperature may correspond to a high temperature of approximately 400°C or higher.

[0125] Next, a cleaning step was performed, and the temperature inside the upper heater (200) or chamber (100) described above was heated again to a high temperature of 400°C or higher, and a step of depositing a thin film on the lower surface of the substrate was performed again.

[0126] However, this method requires time to lower the temperature of the upper heater to perform the cleaning process and then raise the temperature of the upper heater to the process temperature, that is, a temperature of approximately 400°C or higher, which significantly reduces the throughput of the substrate processing device.

[0127] On the other hand, the substrate treatment process according to the present invention does not require a step of lowering or raising the temperature inside the upper heater (200) or chamber (100) as shown in (B) of FIG. 9, and a protective film can be deposited on the upper heater (200) and a cleaning step can be performed right at the process temperature of the deposition process for depositing a thin film on the lower surface of the substrate, thereby significantly increasing the throughput of the substrate treatment device.

[0128] That is, in the substrate treatment process according to the present invention, by including a step of depositing a protective film (240) on the upper heater (200), the remote plasma supplied from the lower shower head (430) can be prevented from directly contacting the upper heater (200) and acting as particles, so that there is no need to lower the temperature of the upper heater (200). In particular, in the case of a high-temperature process of approximately 400°C or higher, the remote plasma such as NF3 can be prevented from acting as particles by forming AlF on the upper heater (200) made of AlN.

[0129] While the present invention has been described above with reference to preferred embodiments, those skilled in the art will appreciate that various modifications and variations can be made to the present invention without departing from the spirit and scope of the invention as defined in the claims below. Therefore, any modified implementation that fundamentally includes the elements of the claims should be considered within the technical scope of the present invention.

[0130] According to the present invention, a protective film is deposited on the upper heater and a cleaning gas is provided through the lower shower head to effectively clean the central portion of the lower shower head.

Claims

1. A chamber providing a processing space where a processing process for a substrate is performed; A substrate support part provided at the lower part of the chamber to support the substrate; A lower shower head provided at the lower portion of the substrate support member to supply cleaning gas or process gas; and A substrate processing device characterized by comprising an upper heater provided at the upper portion of the chamber to supply purge gas and having a protective film formed thereon.

2. In paragraph 1, A substrate processing device characterized in that the upper heater and the lower shower head are provided so as to be able to move relative to each other.

3. In paragraph 1, The above protective film A substrate processing device characterized by being composed of a SiON film.

4. In paragraph 1, A substrate processing device characterized in that the protective film is formed on the surface of the upper heater facing the lower shower head and on the side of the upper heater.

5. In paragraph 1, A substrate processing device characterized in that the thickness of the protective film is determined so that the protective film is completely removed at the end of the cleaning step when the cleaning step for cleaning the inside of the chamber is performed.

6. In paragraph 1, An additional supply path for supplying purge gas through the upper edge of the chamber is further provided, A substrate processing device characterized in that the ratio of the flow rate of the cleaning gas supplied through the lower shower head to the flow rate of the purge gas supplied through the upper heater and the additional supply path during the cleaning process for the substrate is approximately 20 to 40%.

7. A substrate processing method of a substrate processing device having a lower shower head provided inside a chamber to supply cleaning gas or process gas, and an upper heater provided at the upper part of the interior of the chamber to supply purge gas, A substrate processing method characterized by including a step of supplying a protective film deposition gas through the lower shower head to deposit a protective film on the upper heater.

8. In paragraph 7, Following the step of depositing the above protective film, A substrate processing method characterized by further comprising a step of cleaning the inside of the chamber by supplying the cleaning gas through the lower shower head.

9. In paragraph 8, The above cleaning gas contains fluorine radicals, and the surface of the upper heater contains aluminum. A substrate processing method characterized in that the above protective film blocks contact between the cleaning gas and the upper heater.

10. In paragraph 8, A substrate processing method characterized in that the thickness of the protective film is determined so that the protective film is completely removed at the end of the cleaning step.

11. In paragraph 8, A substrate processing method characterized in that the above cleaning step is performed until the above protective film is completely removed.

12. In paragraph 8, An additional supply path for supplying purge gas through the upper edge of the chamber is further provided, A substrate processing method, characterized in that the ratio of the flow rate of the cleaning gas supplied through the lower shower head to the flow rate of the purge gas supplied through the upper heater and the additional supply path during the cleaning process for the substrate is approximately 20 to 40%.

13. In paragraph 8, Prior to the step of depositing the protective film, a step of supplying the process gas to the lower surface of the substrate through the lower shower head is further included. In the step of depositing the protective film, the step of supplying the process gas to the lower surface of the substrate, and the step of cleaning A substrate processing method characterized in that the purge gas supplied through the upper heater is different.

14. In paragraph 7, The thickness of the above protective film is A substrate processing method characterized in that the method is determined by controlling at least one of the flow rate of the cleaning gas supplied through the lower shower head, the flow rate of the purge gas supplied through the upper heater, and the distance between the lower shower head and the upper heater.

15. In paragraph 7, A substrate processing method characterized in that the above protective film is composed of a SiON film.

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