Vapor chamber and foldable electronic device

Abstract

Provided in embodiments of the present application are a vapor chamber and a foldable electronic device. The vapor chamber is applied to the foldable electronic device and is used for dissipating heat for a heat-generating element in the foldable electronic device. The vapor chamber comprises a first planar area, a second planar area, and a bending area, and the first planar area, the bending area, and the second planar area are sequentially arranged in a first direction. The bending area is an area where the vapor chamber deforms when the vapor chamber is bent along with the foldable electronic device, and the first planar area and the second planar area are areas where the vapor chamber does not deform when the foldable electronic device is bent. During specific arrangement of the vapor chamber, the rigidity of the bending area is less than the rigidity of the first planar area and the rigidity of the second planar area. The bending area has less rigidity and greater flexibility than the first planar area and the second planar area, so as to achieve relatively easy bending, such that the vapor chamber can be unfolded along with the relative unfolding of the foldable electronic device and can be folded along with the relative folding of the foldable electronic device, thereby prolonging the bending life of the vapor chamber.

Description

A vapor chamber and foldable electronic device

[0001] Cross Reference to Related Applications

[0002] The present application claims priority to the Chinese patent application No. 202410735693.2, filed on June 6, 2024, and entitled "A vapor chamber and foldable electronic device", the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0003] The present application relates to the field of electronic devices, and in particular to a vapor chamber and foldable electronic device. BACKGROUND

[0004] In recent years, with the increasing demand of users for electronic devices with large size and easy to carry, foldable electronic devices have attracted widespread attention. The foldable electronic device includes a flexible display screen and a plurality of housings, and any two adjacent housings can rotate relative to each other, so that the foldable electronic device can switch between a folded state and an unfolded state. Among the plurality of housings, at least one housing is provided with a heat generating element, and the heat generated by the heat generating element will cause the local temperature of the foldable electronic device to rise. If the heat cannot be dissipated in time, it will affect the performance of the foldable electronic device. In one prior art, a vapor chamber is provided in the housing where the heat generating element is arranged, and the vapor chamber conducts the heat generated by the heat generating element to the housing where the heat generating element is arranged, and the housing conducts the heat to the external environment. In the foldable electronic device, the size of each housing is relatively small, so that the heat exchange area between the housing containing the heat generating element and the external environment is small, resulting in low heat dissipation efficiency of the heat generating element. SUMMARY

[0005] The present application provides a vapor chamber and foldable electronic device for improving the heat dissipation efficiency of the heat generating element.

[0006] In a first aspect, the present application provides a vapor chamber. The vapor chamber comprises a first flat region, a second flat region and a bending region, and the first flat region, the bending region and the second flat region are arranged in sequence along a first direction. That is, the bending region is located between the first flat region and the second flat region, and the bending region is adjacent to the first flat region and the second flat region respectively. In the specific arrangement of the vapor chamber, the rigidity of the bending region is less than the rigidity of the first flat region, and the rigidity of the bending region is less than the rigidity of the second flat region. After the vapor chamber is installed in the foldable electronic device, the bending region is the region of the vapor chamber deformed when the foldable electronic device is folded, and the first flat region and the second flat region are the regions of the vapor chamber not deformed when the foldable electronic device is folded. Compared with the first flat region and the second flat region, the rigidity of the bending region is smaller and the flexibility is larger, so it is easier to bend, so that the vapor chamber can be unfolded with the relative unfolding of the foldable electronic device, and can be folded with the relative folding of the foldable electronic device, thereby improving the bending life of the vapor chamber.

[0007] The foldable electronic device comprises a heat generating element and a plurality of housings, wherein the vapor chamber is connected with the heat generating element, and the vapor chamber is also connected with at least two housings. Specifically, the plurality of housings comprises a first housing and a second housing, the first flat region is connected with the first housing, and the second flat region is connected with the second housing. The vapor chamber can conduct the heat generated by the heat generating element to the first housing and the second housing, and enable the heat to be conducted to the external environment through the two housings, thereby increasing the heat exchange area between the heat generating element and the external environment and improving the heat exchange efficiency.

[0008] It is worth noting that the vapor chamber can comprise a plurality of first flat regions or a plurality of second flat regions. In the installation of the vapor chamber, the vapor chamber can be connected with at least two housings, thereby conducting the heat generated by the heat generating element to the at least two housings, to further increase the heat exchange area between the heat generating element and the external environment and improve the heat dissipation efficiency of the heat generating element.

[0009] In the specific setting of the uniform temperature plate, the uniform temperature plate includes various structural forms. In an alternative technical solution, the uniform temperature plate has a plurality of channels inside, the plurality of channels penetrate the bending area along the first direction, and the plurality of channels are arranged in sequence along the second direction. It can also be understood that the plurality of channels extend from the first flat area to the second flat area, thereby penetrating the bending area. Among them, the second direction intersects the first direction. For any one channel, the channel can extend along a straight line or along a curve. For any two adjacent channels, the two channels have a partition wall therebetween, which separates the two channels. The extension direction of the partition wall is the same as that of the channel, that is, the partition wall penetrates the bending area along the first direction. The number of partition walls can also be a plurality, and the plurality of partition walls are arranged in sequence along the second direction. At least part of the partition walls are provided with a first groove, the first groove is located in the bending area, and the first groove penetrates the partition wall along the second direction, thereby connecting the two adjacent channels.

[0010] In the above technical solution, the first groove and the channel together form a hollow area of the bending area, thereby increasing the occupied space of the hollow area in the bending area, reducing the stiffness of the bending area, and improving the bending performance of the bending area. In addition, when the uniform temperature plate is bent, the first groove can provide a buffer space for the deformation of the partition wall, thereby reducing the bending stress of the bending area and improving the bending performance of the bending area.

[0011] In the specific setting of the first groove, in an alternative technical solution, the uniform temperature plate has a first surface, and the plane where the first surface is located is perpendicular to the thickness direction of the uniform temperature plate. The minimum distance from the inner wall of the first groove to the first surface is L1, and the minimum distance from the inner wall of the channel to the first surface is L2, L1 and L2 satisfy the following relationship: L1>L2. The above channel includes a first channel and a second channel, wherein the first channel is used to transport liquid heat-conducting medium, and the second channel is used to transport gaseous heat-conducting medium. The first channel and the first groove can satisfy the above relationship, and the second channel and the first groove can also satisfy the above relationship. Taking the first channel as an example, by making L1>L2, a part of the wall surface of the first channel is located on the side of the first groove close to the first surface, and this part of the wall surface can still produce capillary action on the liquid heat-conducting medium, so that the liquid heat-conducting medium can pass through the area provided with the first groove and continue to flow along the first channel.

[0012] In the specific arrangement of the first grooves, the first grooves have various arrangement modes. For example, in an optional technical solution, the bending area has a center line, and the center line extends along the second direction; the bending area includes a plurality of first grooves, and the plurality of first grooves are symmetrically distributed about the center line. The center line divides the bending area into two sub-areas, and the two sub-areas are symmetric about the center line. The plurality of first grooves included in the bending area are evenly distributed in the above two sub-areas and are also symmetric about the center line, so that the deformations of the above two sub-areas are consistent, thereby improving the bending performance of the bending area.

[0013] For another example, in an optional technical solution, the bending area also has a center line and also includes a plurality of first grooves; in the direction close to the center line, the number of first grooves gradually decreases. That is, in the bending area, the distribution of the first grooves is uneven. In the area of the bending area far from the center line, the number of first grooves is large, and in the area of the bending area close to the center line, the number of first grooves is small. The uneven distribution of the first grooves makes the stiffness of the bending area also uneven, and in the area where the first grooves are distributed more, the stiffness of the bending area is smaller, and in the area where the first grooves are distributed less, the stiffness of the bending area is larger. Therefore, compared with the area of the bending area far from the center line, the area of the bending area close to the center line has larger stiffness, so that the area of the bending area close to the center line has sufficient stiffness support, thereby making the deformation of the area of the bending area close to the center line not easy to change suddenly in the bending process of the vapor chamber, and the overall shape of the bending area after bending can be arc-shaped, and the deformation is relatively smooth.

[0014] For another example, in an optional technical solution, the bending area includes a groove group, and the groove group includes a plurality of first grooves arranged side by side along the second direction, and the center lines of the plurality of first grooves coincide or substantially coincide. In addition, in the groove group, for any two adjacent first grooves, the two first grooves are located on adjacent two partition walls, respectively. The above groove group can make the adjacent multiple partition walls have first grooves at the same position, so that when the vapor chamber is bent, the plurality of first grooves can provide buffer space for the respective corresponding partition walls at the same position, so that the stress of the adjacent multiple partition walls at the above position is released, thereby improving the bending performance of the bending area at the position.

[0015] In a specific arrangement of the groove groups, the groove groups can be one or multiple. In a specific arrangement of the groove groups, the groove groups can be symmetrically distributed about the center line of the bending area, randomly distributed, or distributed in other manners. In an optional technical solution, the bending area includes multiple groove groups, and two groove groups adjacent in the second direction are staggered. It can also be understood that the two groove groups adjacent in the second direction are not aligned in the direction, but staggered, or in other words, the two groove groups have a certain interval in the first direction. By staggering the multiple groove groups, the distribution range of the groove groups in the bending area can be expanded, thereby improving the bending performance of the bending area at different positions.

[0016] In an optional technical solution, the multiple channels include first channels and second channels, wherein the cross-sectional area of the second channels is greater than that of the first channels, and at least one first channel is distributed between two adjacent second channels. In an application scenario, the first channels are used to flow liquid heat-conducting working medium, and the second channels are used to flow gaseous heat-conducting working medium. The at least one groove group is distributed between the two adjacent second channels, and the groove group communicates the two adjacent second channels. That is, the groove group penetrates the partition wall between the two adjacent second channels, so that the two adjacent second channels are communicated. The groove group can buffer the bending stress of the multiple partition walls between the two adjacent second channels at the same position, thereby improving the bending performance of the bending area at the position.

[0017] In an optional technical solution, at least part of the partition walls are provided with second grooves, the second grooves are located in the first flat area or the second flat area, and the second grooves communicate two adjacent channels. The second grooves can enable the heat-conducting working medium to diffuse from one channel to an adjacent channel during the flow of the heat-conducting working medium in the first flat area or the second flat area, thereby increasing the coverage range of the heat-conducting working medium, enabling the heat generated by the heating element to be conducted to a wider range, and thereby improving the heat dissipation effect of the heating element.

[0018] In a specific arrangement of the second grooves, the size of the second grooves can be the same as or different from that of the first grooves. In an optional technical solution, in the first direction, the length of the second grooves is less than that of the first grooves. Relatively, increasing the length of the first grooves can improve the buffering capacity of the first grooves and improve the bending performance of the bending area, and reducing the length of the second grooves can reduce the influence of the capillary effect of the second grooves on the channels, so that the heat-conducting working medium can continue to flow quickly along the channel after entering the adjacent channel through the second groove, thereby improving the diffusion rate of the heat-conducting working medium.

[0019] In an optional technical solution, the vapor chamber includes a first substrate and a second substrate which are arranged in a stacked manner, and the first substrate and the second substrate are connected by clamping and enclose a plurality of channels. When the first substrate and the second substrate are connected, the edge region of the first substrate and the edge region of the second substrate can be welded by copper paste welding, resistance welding, or diffusion welding, so that the periphery of the first substrate and the second substrate is sealed. In addition to connecting the first substrate and the second substrate at the edge region, the first substrate and the second substrate can also be connected in the bending region. In specific implementation, the first substrate and the second substrate are connected by a first connecting portion, the first connecting portion is located in the bending region, and the first connecting portion is located between two adjacent channels. The first connecting portion can enhance the connection strength of the first substrate and the second substrate in the bending region, reduce the layering between the first substrate and the second substrate in the bending process of the bending region, and prolong the service life of the vapor chamber.

[0020] In an optional technical solution, the vapor chamber has a phase change cavity, the phase change cavity is provided with a capillary structure and a plurality of support bosses which are supported between the bottom wall and the top wall of the phase change cavity. The plurality of support bosses include a first support boss and a second support boss, the first support boss is located in the bending region, the second support boss is located in the first flat region or the second flat region, and the cross-sectional area of the first support boss is smaller than the cross-sectional area of the second support boss. It can also be understood that the support area of the first support boss is smaller than the support area of the second support boss.

[0021] In the above technical solution, by reducing the cross-sectional area of the first support boss, the support area of the first support boss can be reduced, so that the rigidity of the bending region can be smaller than the rigidity of the first flat region and the rigidity of the second flat region, and the bending region can be bent more easily than the first flat region and the second flat region.

[0022] In specific arrangement of the first support boss, the first support boss has a plurality of arrangement modes. For example, in an optional technical solution, the bending region has a center line, the center line extends along the second direction; and the bending region includes a plurality of first support bosses, the plurality of first support bosses are symmetrically distributed about the center line. The center line divides the bending region into two sub-regions, and the two sub-regions are symmetric about the center line. The plurality of first support bosses included in the bending region are evenly distributed in the two sub-regions and are also symmetric about the center line, so that the deformation of the two sub-regions is consistent, and the bending performance of the bending region is improved.

[0023] For example, in an alternative technical solution, the first support bosses gradually increase in density in a direction close to the center line. Alternatively, the spacing between two first support bosses adjacent in the first direction gradually decreases. That is, the first support bosses arranged near the center line are denser than the area of the bending region away from the center line, so that the area near the center line has greater stiffness, thereby providing sufficient stiffness support. Therefore, during the bending process of the vapor chamber, the deformation of the area near the center line is not prone to sudden changes. Alternatively, the area near the center line is not prone to forming an angle, so that the shape of the bending region after bending can be arc-shaped, which is relatively flat as a whole.

[0024] In an alternative technical solution, the bending region includes a plurality of first support bosses, wherein at least part of the first support bosses are fixedly connected with the bottom wall and the top wall of the phase change cavity. Alternatively, the fixed connection can be welding, bonding or integrated. The first support bosses can connect the bottom wall and the top wall of the phase change cavity, thereby reducing the layering between the bottom wall and the top wall of the vapor chamber during the bending process.

[0025] In an alternative technical solution, the vapor chamber includes a first substrate and a second substrate arranged in layers, and the first substrate and the second substrate are connected by clamping. When arranging the first substrate and the second substrate, a structure matching each other can be arranged on the functional surface of the first substrate and the functional surface of the second substrate, so that the first substrate and the second substrate form a channel or a phase change cavity after clamping. The first substrate and the second substrate are substrates formed of a high polymer material, which can improve the flexibility of the first substrate and the second substrate, thereby improving the flexibility of the vapor chamber in the bending region.

[0026] In order to improve the sealing effect of the vapor chamber, a first sealing layer is arranged on the side surface of the first substrate facing the second substrate, and a second sealing layer is arranged on the side surface of the second substrate facing the first substrate. In the specific arrangement of the first sealing layer and the second sealing layer, the first sealing layer and the second sealing layer can be a metal layer, such as a copper layer. In addition, the first sealing layer and the second sealing layer can also be a non-metal layer, such as a ceramic layer.

[0027] In an alternative technical solution, the thickness of the first sealing layer is d1, and the thickness of the second sealing layer is d2, wherein 50nm≤d1≤5000nm, 50nm≤d2≤5000nm. Alternatively, the values of d1 and d2 can be 100nm, 300nm, 500nm, 700nm, 1000nm, 2000nm, 3000nm or 4000nm. Of course, the values of d1 and d2 can also be other values that meet the above range, which will not be listed one by one in this application.

[0028] In the specific preparation of the first sealing layer and the second sealing layer, the first sealing layer and the second sealing layer can be prepared by a physical vapor deposition (PVD) technology, or can be prepared by a plating, spraying or the like process, which will not be listed one by one.

[0029] In a second aspect, the application further provides a foldable electronic device. The foldable electronic device comprises a first shell, a second shell, a heat generating element and the vapor chamber of any one of the first aspect. The first shell and the second shell are rotationally connected by a rotating shaft. The heat generating element is installed on the first shell, and the heat generating element is connected with the vapor chamber. Optionally, the heat generating element is attached to the surface of the vapor chamber, or the heat generating element is attached to the surface of the vapor chamber by a heat-conducting adhesive. In the connection of the vapor chamber and the above-mentioned shell, the first flat area is connected with the first shell, the second flat area is connected with the second shell, and the bending area covers at least part of the rotating shaft.

[0030] In the above-mentioned foldable electronic device, the area of the vapor chamber is large, and the vapor chamber can be connected with multiple shells of the foldable electronic device, so that the heat generated by the heat generating element can be conducted to the above-mentioned multiple shells, and then conducted to a wider space through the above-mentioned multiple shells, thereby improving the heat dissipation efficiency of the heat generating element. BRIEF DESCRIPTION OF DRAWINGS

[0031] FIG. 1 is a structural schematic diagram of a foldable electronic device provided by an embodiment of the application;

[0032] FIG. 2 is a schematic diagram of a vapor chamber provided by an embodiment of the application;

[0033] FIG. 3 is an A-A sectional view of a vapor chamber provided by an embodiment of the application;

[0034] FIG. 4 is a structural schematic diagram of the vapor chamber shown in FIG. 3;

[0035] FIG. 5 is a schematic diagram of an arrangement of a first groove provided by an embodiment of the application;

[0036] FIG. 6 is another schematic diagram of an arrangement of a first groove provided by an embodiment of the application;

[0037] FIG. 7 is another schematic diagram of an arrangement of a first groove provided by an embodiment of the application;

[0038] FIG. 8 is a schematic diagram of an arrangement of a first groove and a second groove provided by an embodiment of the application;

[0039] FIG. 9 is another A-A sectional view of a vapor chamber provided by an embodiment of the application;

[0040] FIG. 10 is another A-A sectional view of a vapor chamber provided by an embodiment of the application;

[0041] FIG. 11 is another A-A cross-sectional view of the vapor chamber according to an embodiment of the present application;

[0042] FIG. 12 is a schematic view of an arrangement of the support bosses according to an embodiment of the present application;

[0043] FIG. 13 is another A-A cross-sectional view of the vapor chamber according to an embodiment of the present application;

[0044] FIG. 14 is a schematic view of a structure of the first substrate according to an embodiment of the present application;

[0045] FIG. 15 is a schematic view of a structure of the second substrate according to an embodiment of the present application.

[0046] Reference signs: 10 - heat generating element; 20 - housing; 21 - first housing; 22 - second housing; 30 - rotating shaft; 40 - vapor chamber; 50 - display screen; 401 - first flat area; 402 - second flat area; 403 - bending area; 404 - channel; 4041 - first channel; 4042 - second channel; 405 - partition wall; 4051 - first groove; 4052 - second groove; 406 - first surface; 407 - groove group; 408 - groove row; 409 - first substrate; 4091 - first groove; 4092 - first connecting portion; 410 - second substrate; 4101 - second groove; 411 - first sealing layer; 412 - second sealing layer; 413 - phase change cavity; 414 - capillary structure; 415 - support boss; 4151 - first support boss; 4152 - second support boss; 416 - boss row; 4161 - first boss row; 4162 - second boss row; 4163 - third boss row. DETAILED DESCRIPTION

[0047] In order to make the purposes, technical solutions and advantages of the present application clearer, the following will make further detailed description to the present application with reference to the drawings. However, the example embodiments can be implemented in various forms, and should not be understood as being limited to the embodiments set forth herein. The same reference signs in the drawings represent the same or similar structures, and thus repeated description thereof will be omitted. The words expressing position and direction described in the embodiments of the present application are described with the drawings as an example, but can also be changed as needed, and the changes made are included in the protection scope of the present application. The drawings of the embodiments of the present application are only used to show the relative position relationship and do not represent the true proportion.

[0048] It should be noted that specific details are set forth in the following description in order to provide an understanding of the present application. However, the present application can be practiced in a variety of ways beyond those specifically described herein, and the skilled person can make similar extensions without departing from the scope of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0049] In order to facilitate understanding of the technical solutions provided by the embodiments of the present application, first of all, the application scenario thereof will be introduced as follows. In recent years, with the increasing demand of users for electronic devices with large size and easy to carry, foldable electronic devices have attracted widespread attention. The foldable electronic device includes a flexible display screen and a plurality of housings, and any two adjacent housings can rotate relative to each other, so that the foldable electronic device can be switched between a folded state and an unfolded state. Among the plurality of housings, at least one housing is provided with a heat generating element, and the heat generated by the heat generating element will cause the local temperature of the foldable electronic device to rise, which will affect the performance of the foldable electronic device if the heat cannot be dissipated in time. In one prior art, a uniform temperature plate is provided in the housing where the heat generating element is arranged, and the uniform temperature plate conducts the heat generated by the heat generating element to the housing, and the housing further conducts the heat to the external environment. In the foldable electronic device, the size of each housing is relatively small, so that the heat exchange area between the housing containing the heat generating element and the external environment is small, resulting in low heat dissipation efficiency of the heat generating element.

[0050] Therefore, the embodiments of the present application provide a uniform temperature plate and a foldable electronic device, which are used to dissipate the heat generated by a heat generating element in the foldable electronic device and to improve the heat dissipation efficiency of the heat generating element. The structure of the uniform temperature plate and the specific arrangement mode of the uniform temperature plate in the foldable electronic device will be described in detail below with reference to the drawings, so as to facilitate understanding of the heat conduction process of the uniform temperature plate to the heat generating element.

[0051] FIG. 1 is a structural schematic diagram of a foldable electronic device provided by an embodiment of the present application. As shown in FIG. 1, in an embodiment, the foldable electronic device includes a heat generating element 10 and a plurality of housings 20. In the plurality of housings 20, any two adjacent housings 20 can be rotatably connected through a rotating shaft 30. Under the connection of the rotating shaft 30, any two adjacent housings 20 can be relatively unfolded or folded, so that the foldable electronic device can be switched between a folded state and an unfolded state. The heat generating element 10 is located in one of the plurality of housings 20, wherein the heat generating element 10 includes but is not limited to a central processing unit (CPU), an artificial intelligence (AI) processor, a system on chip (SoC), a power management unit, or other devices that need to be cooled.

[0052] In order to dissipate the heat generated by the heat generating element 10, the foldable electronic device further includes a vapor chamber 40 connected with the heat generating element 10. The vapor chamber 40 is a heat conduction structure with a heat conduction working medium inside. The heat conduction working medium can be pure water or other working medium that can undergo gas-liquid phase change. The working principle of the vapor chamber 40 includes four links of conduction, evaporation, convection, and condensation. First, the heat generated by the heat generating element 10 is conducted to the vapor chamber 40. Then, the heat conduction working medium close to the heat generating element 10 absorbs heat and changes into a gaseous state, while carrying away a large amount of heat. Then, the gaseous heat conduction working medium diffuses from a high pressure area to a low pressure area (i.e., a low temperature area). When the gaseous heat conduction working medium contacts the inner wall of the vapor chamber 40 with a lower temperature, it condenses into a liquid state and releases heat. Finally, the liquid working medium returns to the area close to the heat generating element 10 through the capillary action of the capillary structure. The heat conduction working medium circulates in the vapor chamber 40 according to the above process, and continuously conducts the heat generated by the heat generating element 10 to the low temperature area away from the heat generating element 10.

[0053] In the specific installation of the vapor chamber 40, in addition to being connected with the heat generating element 10, the vapor chamber 40 is also connected with at least two housings 20 in the foldable electronic device. The vapor chamber 40 can conduct the heat generated by the heat generating element 10 to the at least two housings 20, so that this part of heat can be conducted to the external environment through the at least two housings 20, thereby increasing the heat exchange area between the heat generating element 10 and the external environment and improving the heat exchange efficiency.

[0054] As shown in FIG. 1, in an embodiment, the plurality of housings 20 included in the foldable electronic device include a first housing 21 and a second housing 22, the first housing 21 and the second housing 22 are adjacent, and the first housing 21 and the second housing 22 are respectively connected with a vapor chamber 40. The vapor chamber 40 can conduct the heat generated by the heat generating element 10 to the first housing 21 and the second housing 22, and conduct to the external environment through the first housing 21 and the second housing 22. It should be noted that the above-mentioned first housing 21 and second housing 22 are any two adjacent housings 20 connected with the vapor chamber 40. When arranging the heat generating element 10, the heat generating element 10 can be arranged in the first housing 21 or the second housing 22, or can be arranged in other housings in addition to the first housing 21 and the second housing 22.

[0055] With reference to FIG. 1, in an embodiment, the housing 20 includes a middle frame and a back cover, and the vapor chamber 40 is connected with the middle frame. In addition, the foldable electronic device also includes a flexible display screen 50, the flexible display screen 50 is also connected with the middle frame, and the vapor chamber 40 is located between the flexible display screen 50 and the middle frame. The vapor chamber 40 can conduct the heat generated by the heat generating element 10 to the middle frame and the flexible display screen 50.

[0056] In the specific preparation of the vapor chamber 40, the material of the vapor chamber 40 includes a plurality of choices. For example, the vapor chamber 40 can be a heat conduction structure formed of metal materials such as copper, copper alloy, titanium or titanium alloy; or the vapor chamber 40 can also be a heat conduction structure formed of non-metallic materials such as high polymer materials or glass materials; or the vapor chamber 40 can also be a heat conduction structure formed by different metals or by the combination of metals and non-metals.

[0057] FIG. 2 is a structural schematic diagram of the vapor chamber provided by the embodiment of the present application. As shown in FIG. 2, in an embodiment, the vapor chamber 40 includes a first flat area 401, a second flat area 402 and a bending area 403, and the first flat area 401, the bending area 403 and the second flat area 402 are arranged in sequence along a first direction X. That is, the bending area 403 is located between the first flat area 401 and the second flat area 402, and the bending area 403 is adjacent to the first flat area 401 and the second flat area 402 respectively. Among them, the rigidity of the bending area 403 is less than the rigidity of the first flat area 401 and less than the rigidity of the second flat area 402. The bending area 403 is the area where the vapor chamber 40 deforms when the foldable electronic device is bent, and the first flat area 401 and the second flat area 402 are the areas where the vapor chamber 40 does not deform when the foldable electronic device is bent. Compared with the first flat area 401 and the second flat area 402, the rigidity of the bending area 403 is smaller and the flexibility is larger, so it is easier to bend, so that the vapor chamber 40 can be unfolded with the relative unfolding of the foldable electronic device, and can be folded with the relative folding of the foldable electronic device, thereby improving the bending life of the vapor chamber 40.

[0058] The bending region 403 can be one or multiple. The number of the bending region 403 is consistent with the number of the hinge 30 located between two adjacent housings 20 connected with the vapor chamber 40. For any one bending region 403, the flat regions adjacent to the bending region 403 and located on both sides of the bending region 403 are the first flat region 401 and the second flat region 402 respectively.

[0059] Referring to FIG. 1 and FIG. 2, in an embodiment, the foldable electronic device includes a first housing 21 and a second housing 22, the first housing 21 and the second housing 22 are rotationally connected by a hinge 30, and the first housing 21 is provided with a heat generating element 10. After the vapor chamber 40 is installed to the foldable electronic device, the vapor chamber 40 is connected with the heat generating element 10, the first flat region 401 is connected with the first housing 21, the second flat region 402 is connected with the second housing 22, and the bending region 403 corresponds to the hinge 30 connecting the first housing 21 and the second housing 22. When the foldable electronic device is in an unfolded state, the bending region 403 covers at least part of the hinge 30. Alternatively, in the thickness direction of the foldable electronic device, the projection of the bending region 403 and the projection of the hinge 30 at least partially overlap.

[0060] The vapor chamber 40 has a large area and can be connected with multiple housings 20 of the foldable electronic device, so that the heat generated by the heat generating element 10 can be conducted to the multiple housings 20. The multiple housings 20 are also connected with the flexible display 50 or other components, so that the heat generated by the heat generating element 10 can continue to be conducted to the components connected with the housings 20, such as the flexible display, and finally conducted to the external environment. In addition, the housings 20 are also in direct contact with the external environment, so that part of the heat can be directly conducted to the external environment. In this way, the vapor chamber 40 can conduct the heat generated by the heat generating element 10 to a wider space through the multiple housings 20, thereby improving the heat dissipation efficiency of the heat generating element 10.

[0061] In the specific setting of the uniform temperature plate 40, the uniform temperature plate 40 includes various structural forms. FIG. 3 is an A-A sectional view of the uniform temperature plate according to an embodiment of the present application. Referring to FIGS. 2 and 3, in some embodiments, the uniform temperature plate 40 has a plurality of channels 404 extending through the bending region 403 along the first direction X, and the plurality of channels 404 are arranged in sequence along the second direction Y. It can also be understood that the plurality of channels 404 extend from the first flat region 401 to the second flat region 402, thereby extending through the bending region 403. The plurality of channels 404 include a first channel 4041 and a second channel 4042, and the first channel 4041 and the second channel 4042 are connected. The plurality of channels 404 contain a heat-conducting working medium, wherein the first channel 4041 is used to transport liquid heat-conducting working medium, and the second channel 4042 is used to transport gaseous heat-conducting working medium. After the uniform temperature plate 40 is connected with the heat generating element 10, the area close to the heat generating element 10 forms a high temperature area, and the area far from the heat generating element 10 forms a low temperature area. In the high temperature area, the liquid heat-conducting working medium absorbs heat and can change from liquid to gas, and at the same time, a large amount of heat is taken away. Then, the gaseous heat-conducting working medium flows along the second channel 4042, and when the gaseous heat-conducting working medium reaches the low temperature area, the gaseous heat-conducting working medium condenses into liquid. The liquid heat-conducting working medium enters the first channel 4041 from the second channel 4042, and the first channel 4041 has a capillary effect on the liquid heat-conducting working medium, so that the liquid heat-conducting working medium flows back to the high temperature area along the first channel 4041. The heat-conducting working medium circulates in the uniform temperature plate 40 according to the above process, and continuously conducts the heat generated by the heat generating element 10 to the low temperature area away from the heat generating element 10.

[0062] In the specific arrangement of the first channels 4041 and the second channels 4042, there are various arrangement manners. For example, in one embodiment, the first channels 4041 and the second channels 4042 are arranged alternately along the second direction Y. For another example, in another embodiment, at least one first channel 4041 is arranged between every two adjacent second channels 4042. For still another example, in still another embodiment, the first channels 4041 and the second channels 4042 are arranged randomly along the second direction Y.

[0063] In the specific arrangement of the first channels 4041 and the second channels 4042, there are various arrangement manners. For example, in one embodiment, the first channels 4041 and the second channels 4042 are arranged alternately along the second direction Y. For another example, in another embodiment, at least one first channel 4041 is arranged between every two adjacent second channels 4042. For still another example, in still another embodiment, the first channels 4041 and the second channels 4042 are arranged randomly along the second direction Y.

[0064] Please continue to refer to FIG. 2 and FIG. 3. In the above plurality of channels 404, there is a partition wall 405 between any two adjacent channels 404. The partition wall 405 is a solid structure, which can separate the two adjacent channels 404. The two adjacent channels 404 can be two adjacent first channels 4041, two adjacent second channels 4042, or one first channel 4041 and one second channel 4042. The extension direction of the partition wall 405 is the same as the extension direction of the above channels 404, i.e., the partition wall 405 extends through the bending area 403 along the first direction X. Or, the partition wall 405 extends from the first flat area 401 to the second flat area 402 and through the bending area 403. When the uniform temperature plate 40 is bent, the part of the partition wall 405 located in the bending area 403 will also be bent.

[0065] For the above-mentioned uniform plate 40, in order to improve the bending performance of the bending area 403, various setting modes are included. As shown in FIGS. 2 and 3, in some embodiments, at least part of the partition wall 405 has a first groove 4051 penetrating through the thickness of the partition wall 405, thereby connecting the two adjacent channels 404. In the specific setting of the first groove 4051, the cross section of the first groove 4051 can be various shapes, such as circular, elliptical or rectangular shapes, etc., which will not be enumerated one by one in this application. In the specific formation of the first groove 4051, part of the material in the partition wall 405 can be removed by etching or mechanical processing process in the bending area 403, thereby forming the first groove 4051. The above-mentioned first groove 4051 and the channel 404 together form a hollow area of the bending area 403, thereby increasing the occupied space of the hollow area in the bending area 403, reducing the stiffness of the bending area 403, and improving the bending performance of the bending area 403. In addition, when the uniform plate 40 is bent, the first groove 4051 can provide a buffer space for the deformation of the partition wall 405, thereby reducing the bending stress of the bending area 403, so that the bending area 403 can meet the repeated bending requirement of small turning radius, thereby improving the bending performance of the bending area 403.

[0066] In the uniform plate 40, for any one partition wall 405, the partition wall 405 can be provided with one first groove 4051, or can be provided with multiple first grooves 4051 along the length direction, or can not be provided with the first groove 4051. And for the two adjacent partition walls 405, the first grooves 4051 in the two partition walls 405 can be arranged in a row along the second direction Y, or can be staggered.

[0067] It is worth mentioning that, in addition to setting the first groove 4051 in the bending area 403 to reduce the rigidity of the bending area 403 and improve the bending performance of the bending area 403, the above-mentioned purpose can also be achieved by other means. For example, in some embodiments, the wall thickness of at least part of the channel 404 corresponding to the bending area 403 is smaller than the wall thickness corresponding to the first flat area 401 and smaller than the wall thickness corresponding to the second flat area 402. When implementing the above-mentioned embodiment, the thickness of the heat spreader 40 in the bending area 403 can be equal to the thickness of the first flat area 401 and the thickness of the second flat area 402, and the height of the part of the channel 404 in the thickness direction Z of the heat spreader 40 in the bending area 403 is increased, so that the wall thickness of at least part of the channel 404 corresponding to the bending area 403 is smaller than the wall thickness corresponding to the first flat area 401 and smaller than the wall thickness corresponding to the second flat area 402. Alternatively, the thickness of the heat spreader 40 in the bending area 403 can be smaller than the thickness of the first flat area 401 and the thickness of the second flat area 402, and for any one channel 404, the height of the channel 404 in the thickness direction Z of the heat spreader 40 in the above-mentioned three areas is the same.

[0068] For example, in another embodiment, the bending area 403 comprises a flexible material, and the first flat area 401 and the second flat area 402 do not comprise a flexible material. For other ways in addition to the above-mentioned ways, this application does not enumerate one by one.

[0069] When implemented, the above-mentioned different ways can be combined to reduce the rigidity of the bending area 403 and improve the bending performance of the bending area 403. For example, in some embodiments, the bending area 403 comprises the first groove 4051, and the wall thickness of at least part of the channel 404 corresponding to the bending area 403 is smaller than the wall thickness corresponding to the first flat area 401 and smaller than the wall thickness corresponding to the second flat area 402.

[0070] FIG. 4 is a structural schematic diagram of the vapor chamber shown in FIG. 3. Referring to FIGS. 3 and 4 together, in some embodiments, the bending area 403 has a first surface 406 which is perpendicular to the thickness direction Z of the vapor chamber 40. With the first surface 406 as a reference, the minimum distance between the inner wall of the first groove 4051 and the first surface 406 is L1, and the minimum distance between the inner wall of the channel 404 and the first surface 406 is L2, where L1>L2. L1 can be understood as the minimum wall thickness between the inner wall of the first groove 4051 and the first surface 406, and L2 can be understood as the minimum wall thickness between the inner wall of the channel 404 and the first surface 406. The channel 404 described above can be either the first channel 4041 or the second channel 4042. That is, the above relationship can be satisfied between the first groove 4051 and the first channel 4041, and the above relationship can also be satisfied between the first groove 4051 and the second channel 4042.

[0071] In a specific embodiment, for the first channel 4041, by making L1>L2, a portion of the wall surface of the first channel 4041 can be located on the side of the first groove 4051 close to the first surface 406, so that this portion of the wall surface can still produce capillary action on the liquid heat-conducting working medium. Therefore, under the action of capillary force, the liquid heat-conducting working medium can flow through the area provided with the first groove 4051 and continue to flow along the first channel 4041. It can also be understood that by making L1>L2, the influence of the provision of the first groove 4051 on the capillary action of the first channel 4041 can be reduced, so that the liquid heat-conducting working medium can continue to flow along the first channel 4041 when passing through the first groove 4051.

[0072] When the first grooves 4051 are arranged in the bending area 403, there are various arrangement modes. For example, the first grooves 4051 can be arranged randomly. For another example, the first grooves 4051 can also be arranged according to certain rules. FIG. 5 is a schematic diagram of an arrangement of the first grooves provided in an embodiment of the present application. As shown in FIG. 5, in an embodiment, the bending area 403 has a center line OP which extends along the second direction Y; the bending area 403 includes a plurality of first grooves 4051 which are symmetrically distributed about the center line OP. Referring to FIG. 5, the center line OP divides the bending area 403 into two sub-areas which are symmetric about the center line OP. The plurality of first grooves 4051 included in the bending area 403 are evenly distributed in the above two sub-areas and are also symmetric about the center line OP, so that the deformation of the above two sub-areas is more consistent, thereby improving the bending performance of the bending area 403.

[0073] In the implementation of the above embodiment, various implementations are included. For example, in one implementation, a part of the first grooves 4051 are symmetrically distributed on both sides of the center line OP, and a part of the first grooves 4051 are distributed along the center line OP. For another example, in another implementation, all the first grooves 4051 are symmetrically distributed on both sides of the center line OP. For still another example, in still another implementation, all the first grooves 4051 are distributed along the center line OP.

[0074] Please continue to refer to FIG. 5. In one embodiment, for any two adjacent partition walls 405, the first grooves 4051 in the two partition walls 405 are staggered in the second direction Y. It can also be understood that the two first grooves 4051 adjacent in the second direction Y are not aligned in this direction, but are staggered. In other words, the above two first grooves 4051 have a certain interval in the first direction X. The bending area 403 includes a plurality of first grooves 4051 arranged in the above manner, and the distribution of the first grooves 4051 in the bending area 403 is relatively uniform.

[0075] FIG. 6 is another arrangement of the first grooves provided by the embodiment of the present application. As shown in FIG. 6, in one embodiment, the bending area 403 includes a groove group 407, and the groove group 407 includes a plurality of first grooves 4051 arranged side by side in the second direction Y. Optionally, the groove group 407 can include two first grooves 4051, three first grooves 4051, four first grooves 4051, or other number of first grooves 4051 arranged side by side in the second direction Y, which will not be enumerated one by one in the present application. The center lines of the plurality of first grooves 4051 included in the groove group 407 can coincide or substantially coincide. In the groove group 407, any two adjacent first grooves 4051 are located in adjacent two partition walls 405, respectively. In other words, the partition walls 405 where the plurality of first grooves 4051 included in the groove group 407 are located are arranged adjacent to each other. The groove group 407 can make the plurality of adjacent partition walls 405 have the first grooves 4051 at the same position, so that when the uniform temperature plate 40 is bent, the plurality of first grooves 4051 can provide a buffer space for the respective corresponding partition walls 405 at the same position, so that the stress of the plurality of adjacent partition walls 405 at the above position is buffered, thereby improving the bending performance of the bending area 403 at the position.

[0076] The bending area 403 can include one groove group 407 or multiple groove groups 407. The groove groups 407 can be symmetrically distributed about the center line OP of the bending area 403, randomly distributed, or distributed in other manners. As shown in FIG. 6, in one embodiment, the bending area 403 includes multiple groove groups 407 symmetrically distributed about the center line OP of the bending area 403. Among them, part of the groove groups 407 are arranged along the center line OP, and the rest of the multiple groove groups 407 are symmetrically distributed on both sides of the center line OP.

[0077] Please continue to refer to FIG. 6. In one embodiment, two groove groups 407 adjacent in the second direction Y can be staggered. That is, the two groove groups 407 adjacent in the second direction Y are not aligned in this direction, but staggered. Or, the two groove groups 407 have a certain interval in the first direction X. In the above embodiment, by staggering the multiple groove groups 407, the distribution range of the groove groups 407 in the bending area 403 can be expanded, thereby improving the bending performance of the bending area 403 at different positions. When arranging the multiple groove groups 407, the multiple groove groups 407 are arranged in multiple columns, the multiple columns of groove groups 407 are arranged in the first direction X, each column can include one groove group 407 or multiple groove groups 407 arranged in the second direction Y, and adjacent two columns of groove groups 407 are staggered.

[0078] In other embodiments, two groove groups 407 adjacent in the second direction Y can also be aligned, or the center lines of the two groove groups 407 coincide, which will not be described in detail.

[0079] FIG. 7 is another arrangement of the first groove provided by the embodiment of the present application. As shown in FIG. 7, in one embodiment, the cross-sectional area of the second channel 4042 is larger than that of the first channel 4041, and at least one first channel 4041 is distributed between the two adjacent second channels 4042. In one specific embodiment, the width of the second channel 4042 in the second direction Y is greater than that of the first channel 4041 in the second direction Y, and the height of the second channel 4042 in the thickness direction Z of the vapor chamber 40 is greater than that of the first channel 4041 in the direction. In addition to the first channel 4041, the multiple partition walls 405 are also distributed between the two adjacent second channels 4042. When arranging the first groove 4051, the multiple partition walls 405 between the two adjacent second channels 4042 can be provided with the first groove 4051, or part of the partition walls 405 can be provided with the first groove 4051, and part of the partition walls 405 can not be provided with the first groove 4051. When arranging the first groove 4051, one groove group 407 or multiple groove groups 407 can be distributed between the two adjacent second channels 4042.

[0080] Please continue to refer to FIG. 7, in an embodiment, at least one groove group 407 is distributed between two adjacent second channels 4042, and the groove group 407 communicates the two adjacent second channels 4042. That is, the groove group 407 penetrates the partition wall 405 between the two adjacent second channels 4042, so that the two adjacent second channels 4042 are communicated. Alternatively, among the plurality of first grooves 4051 included in the groove group 407, the first grooves 4051 at both ends are respectively adjacent to and communicated with the second channels 4042 arranged on the same side. The groove group 407 can make the plurality of partition walls 405 between the two adjacent second channels 4042 all have a first groove 4051 at the same position, so that when the vapor chamber 40 is bent, the plurality of first grooves 4051 included in the groove group 407 can respectively provide a buffer space for the respective corresponding partition walls 405 at the same position, so that the stress of the plurality of partition walls 405 between the two adjacent second channels 4042 at the position is buffered, thereby improving the bending performance of the bending area 403 at the position.

[0081] In other embodiments, a plurality of groove groups 407 can also be distributed between two adjacent second channels 4042, and two groove groups 407 adjacent in the second direction Y are staggered.

[0082] In some embodiments, the bending region 403 includes a plurality of first grooves 4051, and the number of the first grooves 4051 gradually decreases along a direction close to the center line OP. That is, the distribution of the first grooves 4051 in the bending region 403 along the first direction X is non-uniform. In the area of the bending region 403 far from the center line OP, the number of the first grooves 4051 is relatively large, and in the area of the bending region 403 close to the center line OP, the number of the first grooves 4051 is relatively small. The non-uniformity of the distribution of the first grooves 4051 makes the stiffness of the bending region 403 non-uniform, specifically, in the area where the first grooves 4051 are distributed more, the stiffness of the bending region 403 is smaller, and in the area where the first grooves 4051 are distributed less, the stiffness of the bending region 403 is larger. In the above-mentioned embodiments, compared with the area of the bending region 403 far from the center line OP, the first grooves 4051 distributed in the area of the bending region 403 close to the center line OP are relatively less, so that the stiffness of the area of the bending region 403 close to the center line OP is less affected by the first grooves 4051, that is, the stiffness of the area of the bending region 403 close to the center line OP is larger, and thus the area of the bending region 403 close to the center line OP has sufficient stiffness support. Therefore, in the process of bending the vapor chamber 40, the deformation of the area of the bending region 403 close to the center line OP is not prone to sudden change, or in other words, the area of the bending region 403 close to the center line OP is not prone to forming an angle, so that the overall shape of the bending region 403 after bending is arc-shaped, and the deformation is relatively smooth. Optionally, the center line OP of the bending region 403 can be provided with a small number of first grooves 4051, or can not be provided with first grooves 4051.

[0083] When the first grooves 4051 are arranged, as shown in FIG. 7, in one embodiment, the first grooves 4051 are arranged to form a plurality of groove columns 408 in the bending region 403, the plurality of groove columns 408 are arranged along the first direction X, and each groove column 408 includes a plurality of first grooves 4051 arranged side by side along the second direction Y. Along a direction close to the center line OP, the number of the first grooves 4051 included in the plurality of groove columns 408 gradually decreases. That is, the closer to the center line OP, the smaller the number of the first grooves 4051 included in the groove column 408, so that the area near the center line OP has sufficient stiffness support, and thus the area is not prone to forming an angle in the deformation process of the bending region 403, and the overall deformation of the bending region 403 is relatively smooth.

[0084] In particular, the center lines of the plurality of first grooves 4051 included in the groove row 408 coincide or substantially coincide. The plurality of first grooves 4051 included in the groove row 408 can be arranged in various manners. For example, in one arrangement, the plurality of first grooves 4051 included in the groove row 408 can be located in one set of adjacent partition walls 405, i.e., any two adjacent first grooves 4051 are located in adjacent partition walls 405. In other words, the plurality of first grooves 4051 included in the groove row 408 form one groove set 407. For another example, in another arrangement, the plurality of first grooves 4051 included in the groove row 408 can be located in multiple sets of adjacent partition walls 405, i.e., some of the adjacent first grooves 4051 are located in adjacent partition walls 405, and some of the adjacent first grooves 4051 are located in non-adjacent partition walls 405. In other words, the plurality of first grooves 4051 included in the groove row 408 form multiple groove sets 407. For yet another example, in yet another arrangement, any two adjacent first grooves 4051 included in the groove row 408 are located in non-adjacent partition walls 405.

[0085] In addition, it should be noted that, when the first grooves 4051 are arranged in the bending region 403, in order to make the area near the center line OP have sufficient rigidity to support, so that the deformation of the area near the center line OP does not easily change, other forms of adjustment can also be made to the first grooves 4051 to achieve the above purpose. For example, in one embodiment, the size of the first grooves 4051 in the first direction X gradually decreases along the direction close to the center line OP. For another example, in another embodiment, the bending region 403 includes multiple groove rows 408, and the spacing between adjacent two groove rows 408 gradually increases along the direction close to the center line OP. Of course, other forms of adjustment can also be made to the first grooves 4051 in other embodiments, which will not be listed one by one in this application.

[0086] In the vapor chamber 40, grooves, i.e., the first grooves 4051, can be arranged only in the bending region 403, and the first flat region 401 and the second flat region 402 are not provided with grooves. Alternatively, in addition to the bending region 403 being provided with grooves, the first flat region 401 and / or the second flat region 402 are also provided with grooves. In order to distinguish from the first grooves 4051, the grooves located in the first flat region 401 and the second flat region 402 are referred to as the second grooves 4052.

[0087] Fig. 8 is a schematic view of an arrangement of the first grooves and the second grooves according to an embodiment of the present application. As shown in Fig. 8, in one embodiment, part of the partition wall 405 is provided with the second groove 4052, and the second groove 4052 is located in the first flat area 401 or the second flat area 402. Compared with the bending area 403, the first flat area 401 and the second flat area 402 have a larger range, and the second groove 4052 can make the heat-conducting working medium diffuse from one channel 404 to an adjacent channel 404 during the flow of the heat-conducting working medium in the first flat area 401 or the second flat area 402, thereby increasing the coverage of the heat-conducting working medium and enabling the heat generated by the heat-generating element 10 to be conducted to a wider range, and thus improving the heat dissipation effect of the heat-generating element 10.

[0088] For any one of the partition walls 405, the partition wall 405 can be provided with only the first groove 4051, only the second groove 4052, or both the first groove 4051 and the second groove 4052, or the partition wall 405 can be provided with neither the first groove 4051 nor the second groove 4052. For the bending area 403, the number of the first grooves 4051 contained in the unit volume of the bending area 403 can be one or multiple. For the first flat area 401, the number of the second grooves 4052 contained in the unit volume of the first flat area 401 can also be one or multiple, or zero. For the second flat area 402, the number of the second grooves 4052 contained in the unit volume of the second flat area 402 can also be one or multiple, or zero.

[0089] In one embodiment, the total space occupied by the first grooves 4051 contained in the unit volume of the bending area 403 is greater than the total space occupied by the second grooves 4052 contained in the unit volume of the first flat area 401. That is, in the unit volume of the bending area 403, the space occupied by the hollow part formed by the channel 404 and the first groove 4051 is relatively large, and in the unit volume of the first flat area 401, the space occupied by the hollow part formed by the channel 404 and the second groove 4052 is relatively small. In other words, in the unit volume of the bending area 403, the space occupied by the solid part is relatively small, and in the unit volume of the first flat area 401, the space occupied by the solid part is relatively large. In this way, the rigidity of the bending area 403 can be made smaller than the rigidity of the first flat area 401. Similarly, the total space occupied by the first grooves 4051 contained in the unit volume of the bending area 403 is also greater than the total space occupied by the second grooves 4052 contained in the unit volume of the second flat area 402, so that the rigidity of the bending area 403 can be made smaller than the rigidity of the second flat area 402, which will not be described herein.

[0090] In the specific setting of the first groove 4051 and the second groove 4052, the first groove 4051 and the second groove 4052 can have the same size or different sizes. In one embodiment, along the first direction X, the length of the first groove 4051 is greater than the length of the second groove 4052. In the above embodiment, the first groove 4051 is mainly used to improve the bending performance of the bending area 403, and the second groove 4052 is mainly used to connect the adjacent two channels 404. In the setting of the first groove 4051 and the second groove 4052, by increasing the length of the first groove 4051, the buffering capacity of the first groove 4051 can be improved, and the bending performance of the bending area 403 can be improved; by reducing the length of the second groove 4052, the influence of the capillary effect of the second groove 4052 on the channel 404 can be reduced, so that the heat conducting working medium can quickly continue to flow along the channel 404 after entering the adjacent channel 404 through the second groove 4052, thereby improving the diffusion rate of the heat conducting working medium.

[0091] In the specific arrangement of the first groove 4051, the first groove 4051 can be arranged in the manner shown in FIGS. 5, 6 and 7, of course, other arrangement manners can also be used, which will not be listed one by one in the present application. In the specific arrangement of the second groove 4052, the second groove 4052 also includes various arrangement manners. For example, as shown in FIG. 8, in one embodiment, for the adjacent two partition walls 405, the second groove 4052 is arranged staggered, so that the heat conducting working medium can flow along the channel 404 while diffusing around at different positions. For example, in another embodiment, for the adjacent two partition walls 405, the second groove 4052 is arranged in alignment, or in other words, the second groove 4052 is arranged side by side along the second direction Y. The second groove 4052 can also be arranged in other manners, which will not be listed one by one in the present application.

[0092] In the specific formation of the channel 404 inside the vapor chamber 40, various ways are included. FIG. 9 is another A-A sectional view of the vapor chamber provided by the embodiment of the present application, as shown in FIG. 9, in one embodiment, the vapor chamber 40 includes a first substrate 409 and a second substrate 410 arranged in layers, the first substrate 409 and the second substrate 410 are connected by clamping, and the channel 404 is formed by the connection. In the specific implementation of the above embodiment, the side surface of the first substrate 409 facing the second substrate 410 has a first groove 4091, the side surface of the second substrate 410 facing the first substrate 409 has a second groove 4101, and the projection of the first groove 4091 and the second groove 4101 along the thickness direction Z of the vapor chamber 40 at least partially overlaps. After the first substrate 409 and the second substrate 410 are connected by clamping, the first groove 4091 and the second groove 4101 form the channel 404.

[0093] Figure 10 is another A-A sectional view of the vapor chamber according to an embodiment of the present application. The vapor chamber 40 comprises a first substrate 409 and a second substrate 410 stacked together, and the first substrate 409 has a first groove 4091 on the side surface facing the second substrate 410. The second substrate 410 has a flat side surface facing the first substrate 409. The first groove 4091 and the second substrate 410 form a channel 404 after the first substrate 409 and the second substrate 410 are connected together.

[0094] The first groove 4091 and the second groove 4101 can be formed by etching the corresponding substrate using laser engraving or chemical etching. The first groove 4091 and the second groove 4101 are integrated with the corresponding substrate, so that the copper mesh structure does not need to be arranged between the first substrate 409 and the second substrate 410 when the vapor chamber 40 is manufactured. This simplifies the structure of the vapor chamber 40, reduces the weight of the vapor chamber 40, and facilitates the thinning of the vapor chamber 40.

[0095] The first substrate 409 and the second substrate 410 can be formed of a high polymer material. The high polymer material can improve the flexibility of the first substrate 409 and the second substrate 410, thereby improving the flexibility of the vapor chamber 40 in the bending area 403. The types of high polymer materials include polyimide (PI) and polyethylene terephthalate (PET). In an embodiment, the thickness of the first substrate 409 and the second substrate 410 is represented by m, and m satisfies the following relationship: 0.08mm≤m≤0.15mm. Alternatively, m can be 0.09mm, 0.10mm, 0.11mm, 0.12mm, 0.13mm, 0.14mm, or other values within the above range.

[0096] The first substrate 409 and the second substrate 410 can be connected by copper paste welding, resistance welding, or diffusion welding. Alternatively, the first substrate 409 and the second substrate 410 can be connected by other methods such as adhesion, which will not be listed here as long as the four sides of the first substrate 409 and the second substrate 410 are sealed.

[0097] In addition to connecting the first substrate 409 and the second substrate 410 at the edge region, the first substrate 409 and the second substrate 410 can also be connected within the bending region 403. As shown in FIG. 10, in one embodiment, the first substrate 409 and the second substrate 410 are connected by a first connecting portion 4092, the first connecting portion 4092 is located in the bending region 403, and the first connecting portion 4092 is located between two adjacent channels 404. The first connecting portion 4092 can enhance the connection effect of the first substrate 409 and the second substrate 410 in the bending region 403, reduce the layering error between the first substrate 409 and the second substrate 410 during the bending of the vapor chamber 40, and prolong the service life of the vapor chamber 40.

[0098] When the first connecting portion 4092 is specifically arranged, the first connecting portion 4092 includes various structural forms. In one embodiment, the first connecting portion 4092 and the first substrate 409 are in an integrated structure, and the first connecting portion 4092 is part of the planar surface of the side of the first substrate 409 facing the second substrate 410. When the above-mentioned embodiment is specifically implemented, the side of the first substrate 409 facing the second substrate 410 has a plurality of first grooves 4091, and the connecting surface between two adjacent first grooves 4091 has a connecting surface, which is a planar surface. At least part of the connecting surface forms the first connecting portion 4092. The first connecting portion 4092 and the second substrate 410 can be connected by welding or by adhesive bonding.

[0099] In another embodiment, the first connecting portion 4092 and the first substrate 409 are also in an integrated structure, and the first connecting portion 4092 is a groove for accommodating adhesive. When the above-mentioned embodiment is specifically implemented, the side of the first substrate 409 facing the second substrate 410 has a plurality of first grooves 4091, and at least part of the connecting surface between two adjacent first grooves 4091 has a groove, which forms the above-mentioned first connecting portion 4092. The groove can increase the amount of adhesive, thereby improving the bonding effect.

[0100] It is worth noting that the second substrate 410 can also be provided with a second connecting portion for connecting with the first substrate 409. When the above-mentioned second connecting portion is specifically arranged, the structure form of the first connecting portion 4092 can be referred to, and the present application will not be described in detail.

[0101] Referring to FIGS. 9 and 10 together, in some embodiments, in order to improve the sealing effect of the vapor chamber 40, the side of the first substrate 409 facing the second substrate 410 is provided with a first sealing layer 411, and the side of the second substrate 410 facing the first substrate 409 is provided with a second sealing layer 412. The first sealing layer 411 and the second sealing layer 412 can cover the inner wall of the channel 404, thereby preventing the heat-conducting working medium from diffusing to the first substrate 409 and the second substrate 410, reducing the risk of leakage of the heat-conducting working medium, and improving the sealing effect of the vapor chamber 40.

[0102] In the specific setting of the first sealing layer 411 and the second sealing layer 412, the first sealing layer 411 and the second sealing layer 412 can be metal layers, such as copper layers. The metal layer has the effect of improving the sealing performance of the corresponding substrate. In addition, due to the good heat conduction effect of the metal layer, the metal layer can quickly conduct heat to the surrounding, thereby improving the heat conduction performance of the corresponding substrate. Of course, the first sealing layer 411 and the second sealing layer 412 can also be non-metal layers, such as ceramic layers.

[0103] In order to reduce the thickness of the vapor chamber 40 and reduce the weight of the vapor chamber 40, thinner first sealing layer 411 and second sealing layer 412 can be provided. In one embodiment, the thickness of the first sealing layer 411 is d1, and the thickness of the second sealing layer 412 is d2, wherein d1 and d2 satisfy the following formula: 50nm≤d1≤5000nm, 50nm≤d2≤5000nm. Optionally, the values of d1 and d2 can be 100nm, 300nm, 500nm, 700nm, 1000nm, 2000nm, 3000nm or 4000nm. Of course, the values of d1 and d2 can also be other values that satisfy the above range, which will not be enumerated one by one in this application.

[0104] In the specific preparation of the first sealing layer 411 and the second sealing layer 412, the first sealing layer 411 and the second sealing layer 412 can be prepared by physical vapor deposition (PVD) technology, or can be prepared by electroplating, spraying and other processes, which will not be enumerated one by one in this application.

[0105] In order to enhance the capillary phenomenon of the heat conducting working medium in the channel 404, in one embodiment, the side surface of the first sealing layer 411 away from the first substrate 409 is provided with a hydrophilic coating, and the side surface of the second sealing layer 412 away from the second substrate 410 is also provided with a hydrophilic coating. The hydrophilic coating can enhance the hydrophilicity of the inner wall of the channel 404, thereby enhancing the capillary phenomenon of the heat conducting working medium in the channel 404, so that the heat conducting working medium can flow quickly along the channel 404. In another embodiment, the surface of the first sealing layer 411 and the second sealing layer 412 is roughened. The surface of the first sealing layer 411 and the second sealing layer 412 after roughening treatment has a porous structure, which can also enhance the hydrophilicity of the inner wall of the channel 404, thereby enhancing the capillary phenomenon of the heat conducting working medium in the channel 404, so that the heat conducting working medium can flow quickly along the channel 404.

[0106] In a specific embodiment, the above-mentioned vapor chamber 40 is prepared by the following steps:

[0107] First, the first substrate 409 and the second substrate 410 are prepared by using a high polymer material.

[0108] In the second step, a first groove 4091 is etched on the functional surface of the first substrate 409 by laser engraving or chemical etching, and a second groove 4101 is etched on the functional surface of the second substrate 410.

[0109] In the third step, a first sealing layer 411 is formed on the functional surface of the first substrate 409 by copper plating, and a second sealing layer 412 is formed on the functional surface of the second substrate 410 by copper plating. The first sealing layer 411 covers the first groove 4091, and the second sealing layer 412 covers the second groove 4101.

[0110] In the fourth step, the first substrate 409 and the second substrate 410 are buckled, so that the functional surface of the first substrate 409 and the functional surface of the second substrate 410 are opposite to each other; the first substrate 409 and the second substrate 410 are welded or bonded at the edge area, and the first substrate 409 and the second substrate 410 are welded or bonded in the bending area 403.

[0111] FIG. 11 is another A-A cross-sectional view of the vapor chamber provided by the embodiments of the present application. As shown in FIG. 11, in an embodiment, the vapor chamber 40 has a phase change container 413, and the phase change container 413 is provided with a capillary structure 414 and a plurality of support bosses 415. The two ends of the plurality of support bosses 415 are supported between the bottom wall and the top wall of the phase change container 413. After the vapor chamber 40 is connected with the heat generating element 10, the area close to the heat generating element 10 forms a high temperature area, and the area far from the heat generating element 10 forms a low temperature area. In the high temperature area, the liquid heat conducting working medium absorbs heat and can be changed from liquid state to gaseous state, and at the same time, a large amount of heat is taken away. Then, the gaseous heat conducting working medium diffuses in the phase change container 413, and when the gaseous heat conducting working medium reaches the low temperature area, the gaseous heat conducting working medium condenses into liquid state. The liquid heat conducting working medium can enter the capillary structure 414, and the capillary structure generates capillary action on the liquid heat conducting working medium, so that the liquid heat conducting working medium flows back to the high temperature area. Thus, a heat conduction cycle is completed, and a circulation system in which gas and liquid phases coexist is formed.

[0112] FIG. 12 is a schematic view of the arrangement of the support bosses provided by the embodiments of the present application. As shown in FIG. 12, in an embodiment, the support bosses 415 include first support bosses 4151 and second support bosses 4152, and the cross-sectional area of the first support bosses 4151 is smaller than the cross-sectional area of the second support bosses 4152. The first support bosses 4151 and the second support bosses 4152 are respectively a plurality of, and the first support bosses 4151 are located in the bending area 403, and the second support bosses 4152 are located in the first flat area 401 or the second flat area 402.

[0113] In the above embodiments, by reducing the cross-sectional area of the first support boss 4151, the support area of the first support boss 4151 can be reduced, so that the rigidity of the bending area 403 can be reduced, and the bending performance of the bending area 403 can be improved. In this way, the bending area 403 can be bent more easily than the first flat area 401 and the second flat area 402.

[0114] It should be noted that, in addition to making the cross-sectional area of the first support boss 4151 smaller than the cross-sectional area of the second support boss 4152 to reduce the rigidity of the bending area 403 and improve the bending performance of the bending area 403, the above purpose can also be achieved by other ways. For example, in one embodiment, the thickness of the vapor chamber 40 at the bending area 403 is smaller than the thickness of the first flat area 401 and the thickness of the second flat area 402. For another example, in another embodiment, the bending area 403 comprises a flexible material, while the first flat area 401 and the second flat area 402 do not comprise a flexible material. The present application does not list all other ways.

[0115] In the specific arrangement of the above support boss 415, as for the bending area 403, the number of the first support boss 4151 contained in the unit area of the bending area 403 can be one or more. As for the first flat area 401 and the second flat area 402, the number of the second support boss 4152 contained in the unit area of the first flat area 401 and the second flat area 402 can also be one or more. In one embodiment, the total coverage area of the first support boss 4151 contained in the unit area of the bending area 403 is smaller than the total coverage area of the second support boss 4152 contained in the unit area of the first flat area 401, and is also smaller than the total coverage area of the second support boss 4152 contained in the unit area of the second flat area 402, so that the rigidity of the bending area 403 can be smaller than the rigidity of the first flat area 401, and is also smaller than the rigidity of the second flat area 402, and the bending area 403 can be bent more easily than the first flat area 401 and the second flat area 402.

[0116] In the specific arrangement of the first support bosses 4151 in the bending area 403, the first support bosses 4151 include various arrangement manners. As shown in FIG. 12, in one embodiment, the bending area 403 has a center line OP extending in the second direction; and the bending area 403 includes a plurality of first support bosses 4151 symmetrically distributed about the center line OP. Please continue to refer to FIG. 12, the center line OP divides the bending area 403 into two sub-areas which are symmetric about the center line OP. The plurality of first support bosses 4151 included in the bending area 403 are evenly distributed in the above two sub-areas and are also symmetric about the center line OP, so that the deformation of the above two sub-areas is consistent, thereby improving the bending performance of the bending area 403.

[0117] Please continue to refer to FIG. 12, in one embodiment, in the direction close to the center line OP, the first support bosses 4151 gradually increase in density, or in other words, the spacing between two adjacent first support bosses 4151 in the first direction X gradually decreases. In the above embodiment, in the bending area 403, the distribution of the first support bosses 4151 is uneven. In the area far from the center line OP, the first support bosses 4151 are arranged sparsely, and in the area close to the center line OP, the first support bosses 4151 are arranged densely. The uneven distribution of the first support bosses 4151 makes the stiffness of the bending area 403 also uneven, specifically, in the area where the first support bosses 4151 are arranged sparsely, the stiffness of the bending area 403 is small; in the area where the first support bosses 4151 are arranged densely, the stiffness of the bending area 403 is large. In the above embodiment, compared with the area of the bending area 403 far from the center line OP, the first support bosses 4151 in the area of the bending area 403 close to the center line OP are arranged densely, so that the stiffness of the area of the bending area 403 close to the center line OP is large, thereby making the area of the bending area 403 close to the center line OP have sufficient stiffness support. Therefore, in the process of bending the vapor chamber 40, the deformation of the area of the bending area 403 close to the center line OP is not prone to sudden change. Or in other words, the area of the bending area 403 close to the center line OP is not prone to form an angle, so that the shape of the bending area 403 after bending can be arc-shaped, which is relatively flat as a whole.

[0118] In one embodiment, as shown in FIG. 12, the first support bosses 4151 are arranged to form a plurality of boss rows 416 in the bending region 403, the plurality of boss rows 416 are arranged along the first direction X, and each boss row 416 includes a plurality of first support bosses 4151 arranged along the second direction Y. In the direction close to the center line OP, the spacing between adjacent two boss rows 416 gradually decreases. That is, the closer to the center line OP, the smaller the spacing between adjacent two boss rows 416, so as to provide greater stiffness support for the area near the center line OP, and thus the area is not easy to form an angle during the deformation of the bending region 403, and the deformation of the bending region 403 as a whole is relatively smooth.

[0119] With continuous reference to FIG. 12, in one embodiment, three boss rows 416 are arranged on both sides of the center line OP, respectively, in the direction close to the center line OP, the three boss rows 416 are respectively the first boss row 4161, the second boss row 4162 and the third boss row 4163. Among them, the spacing between the first boss row 4161 and the second boss row 4162 is W1, the spacing between the second boss row 4162 and the third boss row 4163 is W2, and W1 is greater than W2. In other embodiments, W1 can also be equal to W2, which will not be described in detail herein.

[0120] The number of first support bosses 4151 included in each boss row 416 can be the same or different. For example, in the direction close to the center line OP, the number of first support bosses 4151 included in the boss row 416 can gradually increase. In addition, in the first flat region 401 and the second flat region 402, the second support bosses 4152 can also be arranged to form a plurality of rows, and the number of second support bosses 4152 included in each row can be the same as or different from the number of first support bosses 4151 included in the above-mentioned boss row 416. For example, the number of first support bosses 4151 can be greater than the number of second support bosses 4152.

[0121] In the bending region 403, the cross-sectional area of the first support boss 4151 can be the same or different. In one embodiment, in the direction close to the center line OP, the cross-sectional area of the first support boss 4151 gradually decreases. That is, in the direction close to the center line OP, the first support boss 4151 becomes thinner. In the above-mentioned embodiment, by reducing the cross-sectional area of the first support boss 4151, a larger number of first support bosses 4151 can be arranged near the center line OP of the bending region 403, so as to improve the stiffness near the center line OP of the bending region 403.

[0122] In the process of bending, the bottom wall and the top wall of the phase-change cavity 413 are prone to misalignment due to the large deformation of the bending area 403, thereby affecting the heat conduction effect of the vapor chamber 40. In order to improve the above phenomenon, in an embodiment, the bending area 403 comprises a plurality of first support bosses 4151, wherein at least part of the first support bosses 4151 and the bottom wall and the top wall of the phase-change cavity 413 are fixedly connected respectively. Optionally, the fixed connection can be welding, bonding or integral setting. The first support boss 4151 can play a connecting role between the bottom wall and the top wall of the phase-change cavity 413, thereby reducing the misalignment between the bottom wall and the top wall. In the implementation of the above embodiment, in an embodiment, one end of the first support boss 4151 is welded or bonded to the bottom wall of the phase-change cavity 413, and the other end is welded or bonded to the top wall of the phase-change cavity 413. In another embodiment, the vapor chamber 40 comprises two substrates, which are snap-fit connected and enclose the phase-change cavity 413. Among them, the first support boss 4151 and one of the substrates are an integral structure, and the first support boss 4151 is welded or bonded to the other substrate.

[0123] In the above embodiment, the original first support boss 4151 is used as a connecting structure to play a connecting role between the bottom wall and the top wall of the phase-change cavity 413, avoiding the addition of other connecting structures and the occupation of the internal space of the phase-change cavity 413 by other connecting structures, thereby reducing the resistance of the gaseous heat conducting working medium and the liquid heat conducting working medium in the flow process.

[0124] In the specific preparation of the above vapor chamber 40, the vapor chamber 40 comprises a plurality of structural forms. As shown in FIG. 11, in an embodiment, the vapor chamber 40 comprises a first substrate 409 and a second substrate 410 arranged in layers, the first substrate 409 and the second substrate 410 are snap-fit connected and enclose the phase-change cavity 413. Among them, a support boss 415 is arranged between the first substrate 409 and the second substrate 410, and the second substrate 410 is provided with a capillary structure 414 on the side surface facing the first substrate 409. In the heat conduction process of the vapor chamber 40, the liquid heat conducting working medium can flow back to the high-temperature area through the capillary structure 414 on the surface of the second substrate 410.

[0125] In a specific embodiment, the support boss 415 and the first substrate 409 are an integral structure, and the capillary structure 414 and the second substrate 410 are an integral structure. In the above embodiment, the support boss 415 and the capillary structure 414 are located in different substrates, thereby facilitating processing and manufacturing, and improving production efficiency and product yield. Optionally, the capillary structure 414 is a groove on the surface of the first substrate 409.

[0126] Figure 13 is another A-A sectional view of the vapor chamber according to an embodiment of the present application. The vapor chamber 40 shown in Figure 13 is similar to the vapor chamber 40 shown in Figure 11. The vapor chamber 40 shown in Figure 13 also includes a first substrate 409 and a second substrate 410 stacked together. The first substrate 409 and the second substrate 410 are connected by a snap fit and form a phase change cavity 413. The vapor chamber 40 shown in Figure 13 is different from the vapor chamber 40 shown in Figure 11 in that the first substrate 409 has a capillary structure 414 on a surface thereof facing the second substrate 410. In other words, in addition to the capillary structure 414 on the surface of the second substrate 410, the capillary structure 414 on the surface of the first substrate 409 can also be used to return the liquid heat conducting medium to the high temperature area. Thus, the water absorption effect is improved.

[0127] Figure 14 is a structural schematic view of the first substrate according to an embodiment of the present application. As shown in Figure 14, in one embodiment, the first substrate 409 has a capillary structure 414 and a support boss 415 on a surface thereof facing the second substrate 410. The capillary structure 414 and the support boss 415 are integrated with the first substrate 409. In one embodiment, the capillary structure 414 is a groove on the surface of the first substrate 409. Adjacent grooves are separated by a partition wall. At least part of the partition wall can have a third groove. The third groove can connect adjacent grooves. Thus, when the heat conducting medium flows in the grooves, the heat conducting medium can spread to adjacent grooves. Thus, the coverage of the heat conducting medium is improved, and the heat dissipation effect of the heat generating element is improved. Alternatively, the groove can extend in a curve around the support boss 415. Alternatively, the groove can extend in a straight line. Part of the groove can be truncated by the support boss 415 to form a segment.

[0128] Figure 15 is a structural schematic view of the second substrate according to an embodiment of the present application. As shown in Figure 15, in one embodiment, the second substrate 410 has a capillary structure 414 on a surface thereof facing the first substrate 409. The capillary structure 414 is similar to the capillary structure 414 on the surface of the first substrate 409 shown in Figure 14. For example, the capillary structure 414 is a groove. Adjacent grooves can be connected by a third groove. Details are not described herein.

[0129] In one embodiment, the capillary structure 414 can be formed by etching a groove on the corresponding substrate by laser engraving or chemical etching. The capillary structure 414 and the corresponding substrate are integrated. Thus, when the vapor chamber 40 is prepared, a copper mesh structure does not need to be arranged between the first substrate 409 and the second substrate 410. Thus, the structure of the vapor chamber 40 is simplified, the weight of the vapor chamber 40 is reduced, and the vapor chamber 40 is thinned.

[0130] In the specific setting of the first substrate 409 and the second substrate 410, the first substrate 409 and the second substrate 410 can be a substrate structure formed of a polymer material. The polymer material can improve the flexibility of the first substrate 409 and the second substrate 410, thereby improving the flexibility of the vapor chamber 40 at the bending area 403. The types of polymer materials include a variety of, for example, polyimide (PI) or polyethylene terephthalate (PET). In an embodiment, the thickness of the first substrate 409 and the second substrate 410 is represented by m, and m satisfies the following relationship: 0.08mm≤m≤0.15mm. Alternatively, m can be 0.09mm, 0.10mm, 0.11mm, 0.12mm, 0.13mm, 0.14mm, or other values that satisfy the above range.

[0131] In the specific connection of the first substrate 409 and the second substrate 410, the edge area of the first substrate 409 and the edge area of the second substrate 410 can be welded by copper paste welding, resistance welding or diffusion welding, etc., so that the four sides of the first substrate 409 and the second substrate 410 are sealed. Of course, other possible ways such as bonding can also be used for connection, which will not be listed one by one here, as long as the sealing effect of the four sides of the first substrate 409 and the second substrate 410 can be achieved.

[0132] In addition to connecting the first substrate 409 and the second substrate 410 at the edge area, the first substrate 409 and the second substrate 410 can also be connected at the bending area 403. In an embodiment, the first support boss 4151 and the first substrate 409 are an integral structure, and the first support boss 4151 and the second substrate 410 are welded or welded. In the process of bending the vapor chamber 40, the first support boss 4151 described above can play a connecting role between the first substrate 409 and the second substrate 410, thereby reducing the layering error between the first substrate 409 and the second substrate 410. In the above embodiment, the second support boss 4152 and the first substrate 409 are also an integral structure, and the second support boss 4152 and the second substrate 410 are in contact under the action of atmospheric pressure.

[0133] Referring to FIG. 11 and FIG. 13, in some embodiments, to improve the sealing effect of the vapor chamber 40, the first base plate 409 is provided with a first sealing layer 411 on the side surface facing the second base plate 410, and the second base plate 410 is provided with a second sealing layer 412 on the side surface facing the first base plate 409. The first sealing layer 411 and the second sealing layer 412 can cover the inner wall of the channel 404, thereby preventing the heat-conducting working medium from diffusing to the first base plate 409 and the second base plate 410, reducing the risk of leakage of the heat-conducting working medium, and improving the sealing effect of the vapor chamber 40.

[0134] In the specific arrangement of the first sealing layer 411 and the second sealing layer 412, the first sealing layer 411 and the second sealing layer 412 can be metal layers, such as copper layers. The metal layer has the effect of improving the sealing of the corresponding base plate, and in addition, since the metal layer has good heat conduction effect, the metal layer can quickly conduct heat to the surrounding, thereby improving the heat conduction performance of the corresponding base plate. Of course, the first sealing layer 411 and the second sealing layer 412 can also be non-metal layers, such as ceramic layers.

[0135] In order to reduce the thickness of the vapor chamber 40 and reduce the weight of the vapor chamber 40, a relatively thin first sealing layer 411 and a second sealing layer 412 can be provided. In one embodiment, the thickness of the first sealing layer 411 is d1, and the thickness of the second sealing layer 412 is d2, wherein d1 and d2 satisfy the following formula: 50nm≤d1≤5000nm, 50nm≤d2≤5000nm. Optionally, the values of d1 and d2 can be 100nm, 300nm, 500nm, 700nm, 1000nm, 2000nm, 3000nm or 4000nm. Of course, the values of d1 and d2 can also be other values that satisfy the above range, which will not be enumerated one by one in this application.

[0136] In the specific preparation of the first sealing layer 411 and the second sealing layer 412, the first sealing layer 411 and the second sealing layer 412 can be prepared by physical vapor deposition (PVD) technology, or can be prepared by electroplating, spraying and other processes, which will not be enumerated one by one in this application.

[0137] To enhance the capillary phenomenon of the heat conducting medium in the channel 404, in one embodiment, the first sealing layer 411 is provided with a hydrophilic coating on the side surface facing away from the first substrate 409, and the second sealing layer 412 is also provided with a hydrophilic coating on the side surface facing away from the second substrate 410. The hydrophilic coating can enhance the hydrophilicity of the inner wall of the channel 404, thereby enhancing the capillary phenomenon of the heat conducting medium in the channel 404, so that the heat conducting medium can flow quickly along the channel 404. In another embodiment, the surfaces of the first sealing layer 411 and the second sealing layer 412 are roughened. The surfaces of the first sealing layer 411 and the second sealing layer 412 after roughening treatment have a porous structure, and the porous structure can also enhance the hydrophilicity of the inner wall of the channel 404, thereby enhancing the capillary phenomenon of the heat conducting medium in the channel 404, so that the heat conducting medium can flow quickly along the channel 404.

[0138] In a specific embodiment, the above-mentioned uniform heat plate 40 is prepared by the following steps:

[0139] First, the first substrate 409 and the second substrate 410 are prepared by using a high polymer material.

[0140] Second, the first support boss 4151 and the second support boss 4152 are formed on the functional surface of the first substrate 409 by laser engraving, chemical etching or mechanical processing; and the grooves are etched on the functional surface of the second substrate 410 by laser engraving or chemical etching, so as to serve as the capillary structure of the uniform heat plate 40.

[0141] Third, the first sealing layer 411 is formed by plating copper on the functional surface of the first substrate 409, and the second sealing layer 412 is formed by plating copper on the functional surface of the second substrate 410. The first sealing layer 411 covers the first support boss 4151 and the second support boss 4152, and the second sealing layer 412 covers the grooves.

[0142] Fourth, the first substrate 409 and the second substrate 410 are buckled, so that the functional surface of the first substrate 409 and the functional surface of the second substrate 410 are opposite to each other; and the first substrate 409 and the second substrate 410 are welded or bonded at the edge area, and at least part of the first support boss 4151 and the second substrate 410 are welded or bonded.

[0143] In other embodiments, the uniform heat plate 40 can also have other structural forms, which are not listed one by one in the present application.

[0144] Obviously, those skilled in the art can make various modifications and variations to the present application without departing from the scope and spirit of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalent technologies, the present application also intends to include these modifications and variations.

Claims

1. A vapor chamber, characterized by, The first flat area, the bending area and the second flat area are arranged in sequence along a first direction; the rigidity of the bending area is less than the rigidity of the first flat area, and the rigidity of the bending area is less than the rigidity of the second flat area.

2. The vapor chamber of claim 1, wherein, The uniform temperature plate has a plurality of channels inside, the plurality of channels penetrate through the bending area along the first direction, and the plurality of channels are arranged in sequence along a second direction; the second direction intersects the first direction; Adjacent two channels have a partition wall, at least part of the partition wall is provided with a first groove, the first groove communicates adjacent two channels, and the first groove is located in the bending area.

3. The vapor chamber of claim 2, wherein, The bending area has a first surface, a plane where the first surface is located is perpendicular to a thickness direction of the uniform temperature plate; a minimum distance from an inner wall of the first groove to the first surface is L1, a minimum distance from an inner wall of the channel to the first surface is L2, and L1 and L2 satisfy the following relationship: L1>L2.

4. The uniform heat spreader of claim 2 or 3, wherein, The bending area includes at least one groove group, the groove group includes a plurality of first grooves arranged side by side along the second direction, and any adjacent two first grooves are located in adjacent two partition walls respectively.

5. The vapor chamber of claim 4, wherein, The bending area includes a plurality of groove groups, and adjacent two groove groups along the second direction are staggered.

6. The uniform heat spreader of claim 4 or 5, wherein, The plurality of channels include first channels and second channels, a cross-sectional area of the second channel is greater than a cross-sectional area of the first channel, and at least one first channel is distributed between adjacent two second channels; At least one groove group is distributed between adjacent two second channels, and the groove group communicates adjacent two second channels.

7. The vapor chamber of any one of claims 2 to 6, wherein The bending area has a center line, the center line extends along the second direction; the bending area includes a plurality of first grooves, and the number of the first grooves gradually decreases in a direction close to the center line.

8. The vapor chamber of any one of claims 2 to 7, wherein At least part of the partition wall is provided with a second groove, the second groove is located in the first flat area or the second flat area, and the second groove communicates adjacent two channels; Along the first direction, the length of the second groove is less than the length of the first groove.

9. The uniform heat spreader of any of claims 2-8, wherein, The uniform temperature plate includes a first substrate and a second substrate arranged in layers, the first substrate and the second substrate are connected by clamping, and the plurality of channels are enclosed; The first substrate and the second substrate are connected by a first connecting part, the first connecting part is located in the bending area, and the first connecting part is located between adjacent two channels.

10. The vapor chamber of claim 1, wherein, The uniform temperature plate has a phase change cavity, the phase change cavity is provided with a capillary structure and a plurality of support bosses inside, and the plurality of support bosses are supported between a bottom wall and a top wall of the phase change cavity; The plurality of support bosses include first support bosses and second support bosses, the first support bosses are located in the bending area, the second support bosses are located in the first flat area or the second flat area, and a cross-sectional area of the first support boss is less than a cross-sectional area of the second support boss.

11. The vapor chamber of claim 10, wherein, The bending area has a center line extending along the second direction; the bending area comprises a plurality of the first support bosses, and the first support bosses gradually increase in density along a direction close to the center line.

12. The uniform heat spreader of claim 10 or 11, wherein, The bending area comprises a plurality of the first support bosses, and at least part of the first support bosses are fixedly connected with the bottom wall and the top wall of the phase change cavity respectively.

13. The vapor chamber of any one of claims 1-12, wherein, The vapor chamber comprises a first substrate and a second substrate which are stacked and connected by clamping; The first substrate and the second substrate are substrates formed of high polymer materials, and a first sealing layer is arranged on a side surface of the first substrate facing the second substrate, and a second sealing layer is arranged on a side surface of the second substrate facing the first substrate.

14. The vapor chamber of claim 13, wherein, The thickness of the first sealing layer is d1, the thickness of the second sealing layer is d2, and d1 and d2 satisfy the following relationship: 50nm≤d1≤5000nm, 50nm≤d2≤5000nm.

15. A foldable electronic device, characterized by The vapor chamber comprises a first substrate and a second substrate which are stacked and connected by clamping; The first substrate and the second substrate are substrates formed of high polymer materials, and a first sealing layer is arranged on a side surface of the first substrate facing the second substrate, and a second sealing layer is arranged on a side surface of the second substrate facing the first substrate. The thickness of the first sealing layer is d1, the thickness of the second sealing layer is d2, and d1 and d2 satisfy the following relationship: 50nm≤d1≤5000nm, 50nm≤d2≤5000nm. The vapor chamber comprises a first substrate and a second substrate which are stacked and connected by clamping; The first substrate and the second substrate are substrates formed of high polymer materials, and a first sealing layer is arranged on a side surface of the first substrate facing the second substrate, and a second sealing layer is arranged on a side surface of the second substrate facing the first substrate. The thickness of the first sealing layer is d1, the thickness of the second sealing layer is d2, and d1 and d2 satisfy the following relationship: 50nm≤d1≤5000nm, 50nm≤d2≤5000nm.

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