Substrate processing device and transport method

Abstract

This substrate processing device includes a chamber, a stage, an inner ring, an outer ring, a first lifter, a second lifter, and a drive unit. The stage is provided in the chamber and has a first surface on which a substrate is placed, and a second surface provided around the first surface. The inner ring is disposed on the second surface. The outer ring is disposed on the outer side of the inner ring on the second surface. The first lifter raises and lowers the inner ring. The second lifter raises and lowers the outer ring. The height of the upper end of the second lifter is lower than the height of the upper end of the first lifter. The drive unit simultaneously drives the first lifter and the second lifter.

Description

Substrate processing apparatus and transport method

[0001] Various aspects and embodiments of the present disclosure relate to substrate processing apparatus and transfer methods.

[0002] The following Patent Document 1 discloses that "a substrate processing system includes a processing chamber and a pedestal 20 disposed in the processing chamber. An edge connect ring 60 is disposed adjacent to a radially outer edge of the pedestal 20. A first actuator 80 is configured to selectively move the edge connect ring 60 to a raised position relative to the pedestal 20 to provide a gap between the edge connect ring 60 and the pedestal 20 so that a robot arm can remove the edge connect ring 60 from the processing chamber."

[0003] JP 2016-146472 A

[0004] The present disclosure provides a substrate processing apparatus and a transfer method that can improve the degree of freedom in designing the substrate processing apparatus.

[0005] One aspect of the present disclosure is a substrate processing apparatus including a chamber, a stage, an inner ring, an outer ring, a first lifter, a second lifter, and a drive unit. The stage is provided within the chamber and has a first surface on which a substrate is placed and a second surface provided around the first surface. The inner ring is disposed on the second surface. The outer ring is disposed outside the inner ring on the second surface. The first lifter raises and lowers the inner ring. The second lifter raises and lowers the outer ring. The height of the upper end of the second lifter is lower than the height of the upper end of the first lifter. The drive unit drives the first lifter and the second lifter simultaneously.

[0006] According to various aspects and embodiments of the present disclosure, it is possible to improve the degree of freedom in designing a substrate processing apparatus.

[0007] FIG. 1 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus. FIG. 2 is a schematic cross-sectional view showing an example of the configuration of a substrate support unit. FIG. 3 is a plan view showing an example of the configuration of a substrate support unit. FIG. 4 is an enlarged cross-sectional view showing an example of the configuration near the edge of the substrate support unit. FIG. 5 is a diagram showing an example of the arrangement of a drive unit in a reference example. FIG. 6 is a diagram showing an example of a process for transporting an inner ring. FIG. 7 is a diagram showing an example of a process for transporting an inner ring. FIG. 8 is a diagram showing an example of a process for transporting a lower ring and a cover ring. FIG. 9 is a diagram showing an example of a process for transporting a lower ring and a cover ring. FIG. 10 is a diagram showing an example of a process for transporting an inner ring, a lower ring, and a cover ring. FIG. 11 is a diagram showing an example of a process for transporting an inner ring, a lower ring, and a cover ring. FIG. 12 is a flowchart showing an example of a ring assembly replacement procedure. FIG. 13A is a diagram explaining a process for fine-adjusting the height of the inner ring. FIG. 13B is a diagram explaining a process for fine-adjusting the height of the inner ring. FIG. 14 is an enlarged cross-sectional view showing an example of the configuration near the edge of the substrate support unit in the second embodiment. 15A and 15B are views showing another example of a process for transporting the lower ring, and FIG. 16 is a view showing another example of a lift mechanism.

[0008] Hereinafter, embodiments of a substrate processing apparatus and a transfer method will be described in detail with reference to the drawings. However, the substrate processing apparatus and the transfer method disclosed below are not limited to the following embodiments.

[0009] Incidentally, substrate processing apparatuses include components such as edge rings and cover rings that are arranged around the substrates, and these components wear out as substrate processing is repeated, and therefore need to be replaced periodically.

[0010] Furthermore, if the chamber is opened to the atmosphere every time the edge ring and cover ring are replaced, it takes time to return the chamber to a vacuum environment after replacement, resulting in a period of time during which substrate processing is not possible (downtime). Therefore, it is conceivable to lift the edge ring and cover ring with a lift mechanism and remove them from the chamber using a transfer arm without opening the chamber to the atmosphere.

[0011] However, because the edge ring and the cover ring wear at different rates, their replacement timings do not necessarily coincide. Therefore, it is necessary to provide separate lift mechanisms for lifting the edge ring and for lifting the cover ring. If separate lift mechanisms for lifting the edge ring and for lifting the cover ring are provided, space is required for each lift mechanism within the substrate processing apparatus, resulting in an increase in the size of the substrate processing apparatus. When downsizing a substrate processing apparatus, the need to secure space for the lift mechanisms reduces design freedom.

[0012] Therefore, the present disclosure provides a technique that can improve the degree of freedom in designing a substrate processing apparatus.

[0013] [Configuration of Plasma Processing System] An example of the configuration of a plasma processing system will be described below: Fig. 1 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus.

[0014] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2. The capacitively coupled plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet unit. The substrate support 11 is an example of a stage. The gas inlet unit is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet unit includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0015] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112. The central region 111a is an example of a first surface, and the annular region 111b is an example of a second surface.

[0016] In one embodiment, the main body 111 includes a base 1110, an electrostatic chuck 1111, and an insulating ring 1112. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. An insulating ring 1112 is disposed around the electrostatic chuck 1111 to surround the electrostatic chuck 1111. In one embodiment, the upper surface of the ceramic member 1111a near the edge and the upper surface of the insulating ring 1112 form an annular region 111b. Note that an annular electrostatic chuck may be provided instead of the insulating ring 1112. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck, or may be disposed on both the electrostatic chuck 1111 and the annular electrostatic chuck. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as a lower electrode. Thus, the substrate support 11 includes at least one lower electrode.

[0017] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include an inner ring, a lower ring, and a cover ring, which will be described below. The inner ring and the lower ring are formed of a conductive or insulating material, and the cover ring is formed of an insulating material. The inner ring is sometimes referred to as an edge ring or a focus ring.

[0018] A lift mechanism 50 for raising and lowering the ring assembly 112 is provided below the substrate support portion 11. Details of the lift mechanism 50 will be described later.

[0019] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0020] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0021] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0022] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0023] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0024] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0025] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0026] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0027] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0028] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0029] Fig. 2 is a schematic cross-sectional view showing an example of the configuration of the substrate support part 11. Fig. 3 is a plan view showing an example of the configuration of the substrate support part 11. Fig. 4 is an enlarged cross-sectional view showing an example of the configuration near the edge of the substrate support part 11. In the example of Fig. 3, the position of the lift mechanism 50 is indicated by a dashed line.

[0030] The ring assembly 112 includes an inner ring 112a, a lower ring 112b, and a cover ring 112c. The lower ring 112b is an example of an intermediate ring, and the cover ring 112c is an example of an outer ring. The inner ring 112a adjusts the distribution of plasma near the edge of the substrate W. The lower ring 112b protects the area near the edge of the electrostatic chuck 1111 from the plasma. The cover ring 112c protects the area near the edge of the electrostatic chuck 1111 and the insulating ring 1112 from the plasma.

[0031] In this embodiment, the inner ring 112a is disposed on a portion of the upper surface of the lower ring 112b, and a portion of the lower ring 112b is disposed on a portion of the upper surface of the cover ring 112c, so that when the cover ring 112c is lifted, the lower ring 112b is also lifted together with the cover ring 112c.

[0032] For example, as shown in FIG. 4 , the base 1110 has a through hole h1a and a through hole h1b formed therein, penetrating the base 1110 in the thickness direction. The electrostatic chuck 1111 has a through hole h2a formed therein, penetrating the electrostatic chuck 1111 near the edge thereof in the thickness direction. The insulating ring 1112 has a through hole h2b formed therein, penetrating the insulating ring 1112 in the thickness direction. The lower ring 112b has a through hole h3a formed therein, penetrating the lower ring 112b in the thickness direction. The through holes h1a, h2a, and h3a are interconnected, and each has an inner diameter of φ2. The through holes h1b and h2b are interconnected, and each has an inner diameter of φ4.

[0033] The lift mechanism 50 includes a drive unit 500, a cylinder 501, a connecting member 502, a thrust mechanism 503a, a thrust mechanism 503b, and lift pins 504a and 504b. The connecting member 502 is connected to the cylinder 501, the thrust mechanism 503a, and the thrust mechanism 503b. The lift pin 504a is connected to the thrust mechanism 503a, and the lift pin 504b is connected to the thrust mechanism 503b. In this embodiment, the height of the upper end of the lift pin 504b is lower than the height of the upper end of the lift pin 504a.

[0034] 4, for example, the outer diameter of lift pin 504a is φ1, which is smaller than the inner diameter φ2 of through holes h1a, h2a, and h3a, and lift pin 504a is arranged along the inner walls of through holes h1a, h2a, and h3a. Furthermore, the outer diameter of lift pin 504b is φ2, which is smaller than the inner diameter φ4 of through holes h1b and h2b, and lift pin 504b is arranged along the inner walls of through holes h1b and h2b. Lift pin 504a is an example of a first lifter, and lift pin 504b is an example of a second lifter.

[0035] The thrust mechanism 503a is a mechanism that absorbs misalignment that occurs when the cylinder 501 and the lift pins 504a are arranged on different axes. The thrust mechanism 503b is a mechanism that absorbs misalignment that occurs when the cylinder 501 and the lift pins 504b are arranged on different axes. The cylinder 501 and the lift pins 504a and 504b are connected via a connecting member 502, but when viewed from the top and bottom, the lift pins 504a and 504b are arranged at positions away from the cylinder 501. Therefore, if the connecting member 502 is tilted, for example, the load direction on the lift pins 504a and 504b may deviate from the vertical direction. If the load direction on the lift pins 504a and 504b deviates from the vertical direction, the lift pins 504a and 504b may be damaged. Therefore, by providing thrust mechanisms 503a and 503b, the deviation in the load direction on lift pins 504a and 504b is absorbed.

[0036] The driving unit 500 drives the cylinder 501 up and down, thereby simultaneously raising and lowering the lift pins 504a and 504b via the connecting member 502, thrust mechanism 503a, and thrust mechanism 503b. When the lift pin 504a passes through the through holes h1a, h2a, and h3a and rises, the inner ring 112a is lifted by the tip of the lift pin 504a. When the lift pin 504b passes through the through holes h1b and h2b and rises, the cover ring 112c is lifted by the tip of the lift pin 504b. When the cover ring 112c is lifted, the lower ring 112b on the cover ring 112c is also lifted together with the cover ring 112c.

[0037] In this embodiment, as shown in Fig. 3, for example, one drive unit 500 is provided for one lift pin 504a and one lift pin 504b. In the example of Fig. 3, three pairs of lift pins 504a and 504b are provided. Each drive unit 500 independently controls the lifting and lowering of each pair of lift pins 504a and 504b. This allows fine adjustment of the displacement deviations between the multiple lift pins 504a and between the multiple lift pins 504b when they are raised and lowered.

[0038] 5, if one driving unit 500 is provided for each of the lift pins 504a and 504b, six driving units 500 would be arranged below the substrate support 11. In this case, due to restrictions on the location of the driving units 500, it is difficult to arrange the lift pins 504a and 504b close to each other. Therefore, in the example of FIG. 5, there is little freedom in designing the plasma processing apparatus 1 to be miniaturized.

[0039] In contrast, in the plasma processing apparatus 1 of this embodiment, as shown in Fig. 3, one driving unit 500 is provided in common for one lift pin 504a and one lift pin 504b, which allows for greater design freedom when miniaturizing the plasma processing apparatus 1.

[0040] [Operation of Lift Pins] When the inner ring 112a is to be removed, the driving unit 500 simultaneously raises the lift pins 504a and 504b, thereby lifting the inner ring 112a. In this case, as shown in FIG. 6, for example, the driving unit 500 raises the lift pins 504a and 504b so that the tip of the lift pin 504a reaches a height H1 that is higher than a height H0 of the upper surface of the pick 60 of the transfer arm inserted into the plasma processing chamber 10. The height H1 is an example of a first height.

[0041] Next, the pick 60 of the transfer arm is inserted into the plasma processing chamber 10. Then, the driving unit 500 simultaneously lowers the lift pins 504a and 504b, thereby placing the inner ring 112a on the pick 60. In this case, as shown in FIG. 7 , for example, the driving unit 500 lowers the lift pins 504a and 504b so that the height of the tip of the lift pin 504a becomes H2, which is lower than the height H3 of the bottom surface of the pick 60. Note that the driving unit 500 may also lower the lift pins 504a and 504b to a position (initial position) where the lift pins 504a and 504b are accommodated within the substrate support 11.

[0042] This allows the inner ring 112a to be placed on the pick 60 and removed from the plasma processing chamber 10. When a different inner ring 112a is to be loaded, the lift pins 504a and 504b are driven in the reverse order. For example, the pick 60 carrying the different inner ring 112a is inserted into the plasma processing chamber 10, and then the lift pins 504a and 504b are simultaneously raised until the tip of the lift pin 504a reaches height H1. This allows the inner ring 112a to be transferred to the lift pins 504a. Then, after the pick 60 is retracted from the plasma processing chamber 10, the lift pins 504a and 504b are lowered to a position (initial position) where they are housed in the substrate support 11, thereby positioning the inner ring 112a on the lower ring 112b.

[0043] Furthermore, when the lower ring 112b and the cover ring 112c are removed, the driving unit 500 simultaneously raises the lift pins 504a and 504b, causing the lift pins 504b to lift the lower ring 112b together with the cover ring 112c. In this case, as shown in FIG. 8, for example, the driving unit 500 raises the lift pins 504a and 504b so that the tips of the lift pins 504b are at height H1, which is higher than H0. At this time, the lift pins 504a pass through the through-holes h3a in the lower ring 112b, and the tips of the lift pins 504a are raised to a height higher than H1.

[0044] Next, the pick 60 of the transfer arm is inserted into the plasma processing chamber 10. Then, the driving unit 500 simultaneously lowers the lift pins 504a and 504b, thereby placing the lower ring 112b and the cover ring 112c on the pick 60. In this case, for example, as shown in FIG. 9 , the driving unit 500 lowers the lift pins 504a and 504b so that the tip of the lift pin 504a is at height H2, which is lower than height H3. Note that the driving unit 500 may also lower the lift pins 504a and 504b to a position (initial position) where the lift pins 504a and 504b are housed within the substrate support 11.

[0045] This allows the lower ring 112b and the cover ring 112c to be placed on the pick 60 and removed from the plasma processing chamber 10. When another lower ring 112b and cover ring 112c are to be loaded, the lift pins 504a and 504b are driven in the reverse order. For example, the pick 60 carrying the other lower ring 112b and cover ring 112c is inserted into the plasma processing chamber 10. The lift pins 504a and 504b are then simultaneously raised until the tips of the lift pins 504b reach height H1. At this time, the lift pins 504a penetrate the through holes h3a in the lower ring 112b. This allows the lower ring 112b and the cover ring 112c to be transferred to the lift pins 504b. After the pick 60 is retracted from the plasma processing chamber 10, the lift pins 504a and 504b are lowered to a position (initial position) where they are housed within the substrate support 11. This positions the lower ring 112 b and cover ring 112 c over the edge of the electrostatic chuck 1111 and the insulating ring 1112 .

[0046] 6 to 9, the inner ring 112a, the lower ring 112b, and the cover ring 112c are transported separately, but the disclosed technology is not limited to this. As another example, if the timing for replacing the inner ring 112a coincides with the timing for replacing the lower ring 112b and the cover ring 112c, these three components may be replaced together, as shown in FIG.

[0047] In the example of FIG. 10 , with the inner ring 112a positioned on the lower ring 112b, the driving unit 500 simultaneously raises the lift pins 504a and 504b. As a result, the inner ring 112a is lifted by the lift pins 504a, and the lower ring 112b and the cover ring 112c are lifted by the lift pins 504b. Then, after the pick 60 of the transfer arm is inserted into the plasma processing chamber 10, the lift pins 504a and 504b are simultaneously lowered. As a result, the inner ring 112a, the lower ring 112b, and the cover ring 112c are placed on the pick 60, as shown in FIG. 11 , for example. As a result, the inner ring 112a, the lower ring 112b, and the cover ring 112c can be placed on the pick 60 and removed from the plasma processing chamber 10. When another inner ring 112a, lower ring 112b, and cover ring 112c are to be loaded, the lift pins 504a and 504b are driven in the reverse order.

[0048] [Ring Assembly 112 Replacement Procedure] Fig. 12 is a flowchart showing an example of the ring assembly 112 replacement procedure. Each step illustrated in Fig. 12 is realized by the control unit 2 controlling each part of the plasma processing apparatus 1. The replacement procedure illustrated in Fig. 12 is an example of a transport method. In the example of Fig. 12, when the replacement timing of the inner ring 112a coincides with the replacement timing of the lower ring 112b and the cover ring 112c, the inner ring 112a, the inner ring 112b, and the cover ring 112c are replaced together.

[0049] First, it is determined whether it is time to replace the inner ring 112a (step S10). The determination of the timing to replace the inner ring 112a may be made based on, for example, whether the cumulative time of processing substrates W has reached a predetermined time, or whether the amount of wear of the inner ring 112a measured by a sensor or the like has reached a predetermined value. If it is not time to replace the inner ring 112a (step S10: No), the process shown in step S10 is executed again.

[0050] On the other hand, if it is time to replace the inner ring 112a (step S10: Yes), it is determined whether it is time to replace the lower ring 112b and the cover ring 112c (step S11). The determination of the replacement timing for the lower ring 112b and the cover ring 112c may be based on, for example, whether the cumulative time of processing substrates W has reached a predetermined time. Alternatively, the determination of the replacement timing for the lower ring 112b and the cover ring 112c may be based on whether the wear amount of the lower ring 112b or the cover ring 112c measured by a sensor or the like has reached a predetermined value.

[0051] If it is not time to replace the lower ring 112b and the cover ring 112c (step S11: No), the driving unit 500 simultaneously raises the lift pins 504a and 504b until the tips of the lift pins 504a reach height H1 (step S12). As a result, the inner ring 112a is lifted by the lift pins 504a, as shown in FIG. 6, for example. Step S12 is an example of process a).

[0052] Next, the pick 60 of the transfer arm is inserted into the plasma processing chamber 10 (step S13). Then, the driving unit 500 simultaneously lowers the lift pins 504a and 504b until the tip of the lift pin 504a reaches height H2 (step S14). As a result, the inner ring 112a is placed on the pick 60, as shown in FIG. 7, for example. Then, the pick 60 carrying the inner ring 112a is retracted from the plasma processing chamber 10, and the inner ring 112a is removed (step S15).

[0053] Next, the pick 60 carrying the other inner ring 112a is inserted into the plasma processing chamber 10, thereby loading the other inner ring 112a into the plasma processing chamber 10 (step S16). Then, the lift pins 504a and 504b are simultaneously raised until the tips of the lift pins 504a reach height H1 (step S17). This transfers the other inner ring 112a from the pick 60 to the lift pins 504a. Then, the pick 60 retreats from the plasma processing chamber 10 (step S18). Then, the lift pins 504a and 504b are lowered to their initial positions (step S19). This positions the other inner ring 112a on the lower ring 112b. Then, the process shown in step S10 is executed again.

[0054] On the other hand, if it is time to replace the lower ring 112b and the cover ring 112c (step S11: Yes), the driving unit 500 simultaneously raises the lift pins 504a and 504b until the tips of the lift pins 504b reach height H1 (step S20). As a result, as shown in FIG. 10, for example, the inner ring 112a is lifted by the lift pin 504a, and the lower ring 112b and the cover ring 112c are lifted by the lift pin 504b. Step S20 is an example of process b).

[0055] Next, the pick 60 of the transfer arm is inserted into the plasma processing chamber 10 (step S21). Then, the driving unit 500 simultaneously lowers the lift pins 504a and 504b until the tip of the lift pin 504a reaches height H2 (step S22). As a result, the inner ring 112a, the lower ring 112b, and the cover ring 112c are placed on the pick 60, as shown in FIG. 11 . Then, the pick 60 carrying the inner ring 112a, the lower ring 112b, and the cover ring 112c is retracted from the plasma processing chamber 10. As a result, the inner ring 112a, the lower ring 112b, and the cover ring 112c are removed (step S23).

[0056] Next, the pick 60 carrying the inner ring 112a, the lower ring 112b, and the cover ring 112c is inserted into the plasma processing chamber 10. This loads the inner ring 112a, the lower ring 112b, and the cover ring 112c into the plasma processing chamber 10 (step S24). The driving unit 500 then simultaneously raises the lift pins 504a and 504b until the tips of the lift pins 504b reach height H1 (step S25). This transfers the inner ring 112a, the lower ring 112b, and the cover ring 112c from the pick 60 to the lift pin 504a. The pick 60 then retreats from the plasma processing chamber 10 (step S18). The lift pins 504a and 504b are then lowered to their initial positions (step S19). This places another inner ring 112a, a lower ring 112b, and a cover ring 112c on the annular region 111b, and the process shown in step S10 is then performed again.

[0057] The embodiment has been described above. As described above, the substrate processing apparatus (plasma processing apparatus 1) in this embodiment includes a chamber (plasma processing chamber 10), a stage (substrate support 11), an inner ring (inner ring 112a), an outer ring (cover ring 112c), a first lifter (lift pins 504a), a second lifter (lift pins 504b), and a drive unit (drive unit 500). The stage is provided within the chamber and has a first surface (central region 111a) on which a substrate (substrate W) is placed and a second surface (annular region 111b) provided around the first surface. The inner ring is disposed on the second surface. The outer ring is disposed outside the inner ring on the second surface. The first lifter raises and lowers the inner ring. The second lifter raises and lowers the outer ring. The height of the upper end of the second lifter is lower than the height of the upper end of the first lifter. The drive unit drives the first lifter and the second lifter simultaneously, thereby improving the degree of freedom in designing the substrate processing apparatus.

[0058] Furthermore, the substrate processing apparatus in the above-described embodiment includes a plurality of first lifters, second lifters, and drive units. One drive unit is provided for each first lifter and one second lifter, and each drive unit simultaneously drives one first lifter and one second lifter. This allows for greater flexibility in designing the substrate processing apparatus.

[0059] The substrate processing apparatus in the above-described embodiment further includes an intermediate ring (lower ring 112b) having a through hole (through hole h3a), a portion of which is disposed below the inner ring, and another portion of which is disposed above the outer ring. The first lifter has an outer diameter (φ1) narrower than the inner diameter (φ2) of the through hole, and raises and lowers the inner ring through the through hole. The intermediate ring is lifted by the outer ring, which is lifted by the second lifter. This allows the intermediate ring to be easily removed together with the outer ring.

[0060] The transfer method in the above-described embodiment is a transfer method in a substrate processing apparatus, and includes steps a) and b). The substrate processing apparatus (plasma processing apparatus 1) includes a chamber (plasma processing chamber 10), a stage (substrate support 11), an inner ring (inner ring 112a), an outer ring (cover ring 112c), a first lifter (lift pins 504a), a second lifter (lift pins 504b), a drive unit (drive unit 500), and a control unit (control unit 2). The stage is provided in the chamber and has a first surface (central region 111a) on which a substrate (substrate W) is placed, and a second surface (annular region 111b) provided around the first surface. The inner ring is disposed on the second surface. The outer ring is disposed outside the inner ring on the second surface. The first lifter raises and lowers the inner ring. The second lifter raises and lowers the outer ring. Furthermore, the height of the upper end of the second lifter is lower than the height of the upper end of the first lifter. The drive unit simultaneously drives the first lifter and the second lifter. The control unit executes steps a) and b). In step a), when transporting the inner ring, the control unit controls the drive unit to raise the first lifter until the tip of the first lifter reaches a first height (height H1) that is higher than the height (height H0) of the upper surface of the pick of the transport arm that transports the substrate. In step b), when transporting the outer ring, the control unit controls the drive unit to raise the second lifter until the tip of the second lifter reaches the first height. This improves the degree of freedom in designing the substrate processing apparatus.

[0061] In the above-described embodiment, the substrate processing apparatus further includes an intermediate ring (lower ring 112b) having a through hole (through hole h3a), a portion of which is disposed below the inner ring, and another portion of which is disposed above the outer ring. The first lifter has an outer diameter (φ1) that is smaller than the inner diameter (φ2) of the through hole. In step a), the first lifter raises and lowers the inner ring through the through hole. In step b), the intermediate ring is lifted by the outer ring, which is lifted by the second lifter. This allows the intermediate ring to be easily removed together with the outer ring.

[0062] [Others] The technology disclosed in the present application is not limited to the above-described embodiment, and various modifications are possible within the scope of the gist thereof.

[0063] For example, in the above-described embodiment, each driving unit 500 may drive the lift pins 504a with a small displacement to compensate for the height of the upper surface of the inner ring 112a worn away by the plasma. For example, as shown in FIG. 13A , if the upper surface of the inner ring 112a, which was previously at the position indicated by the dashed line, is worn away by the plasma, the driving unit 500 raises the lift pins 504a by the thickness of the inner ring 112a worn away by the plasma. That is, the driving unit 500 drives the lift pins 504a to raise the inner ring 112a in accordance with the amount of wear of the inner ring 112a. This allows the height of the upper surface of the inner ring 112a to be kept constant, as shown in FIG. 13B . The process of raising the inner ring 112a in accordance with the amount of wear of the inner ring 112a is an example of process d).

[0064] In the above-described embodiment, the lift pin 504a has an outer diameter φ1 that is narrower than the inner diameter φ2 of the through hole h3a, but the disclosed technology is not limited to this. As another example, the lift pin 504a may have a first portion 504a1, a second portion 504a2, and a step portion 504a3, as shown in FIG. 14 . The first portion 504a1 has an outer diameter φ5 that is wider than the inner diameter φ2 of the through hole h3a. The second portion 504a2 is located closer to the tip of the lift pin 504a than the first portion 504a1 and has an outer diameter φ1 that is narrower than the inner diameter φ2 of the through hole h3a. The step portion 504a3 is located between the first portion 504a1 and the second portion 504a2.

[0065] 14 , the inner diameters of the through-hole h1a of the base 1110 and the through-hole h2a of the electrostatic chuck 1111 are φ6, which is larger than the outer diameter φ5 of the first portion 504a1. This allows the first portion 504a1 and the second portion 504a2 of the lift pin 504a to move up and down within the through-hole h1a and the through-hole h2a.

[0066] By raising the lift pins 504a until the height of the step portions 504a3 reaches height H1, the lower ring 112b can be lifted by the step portions 504a3, as shown in FIG. 15 . The process in which the control unit 2 controls the drive unit 500 to raise the lift pins 504a until the height of the step portions 504a3 reaches height H1 is an example of process c). This allows the lower ring 112b and the cover ring 112c to be removed separately. Furthermore, as shown in FIG. 15 , the inner ring 112a can also be lifted by the tips of the lift pins 504a, so the inner ring 112a and the lower ring 112b can be removed together. Furthermore, by raising the lift pins 504a until the height of the tips of the lift pins 504b reaches height H1, the inner ring 112a, the lower ring 112b, and the cover ring 112c can be removed together.

[0067] 15, since the lower ring 112b can be raised by the step portion 504a3, a portion of the lower ring 112b does not have to be disposed in a partial region of the upper surface of the cover ring 112c. In other words, the lower ring 112b and the cover ring 112c may be disposed so as not to overlap when viewed from above.

[0068] In the above embodiment, one drive unit 500 is provided for each lift pin 504a and each lift pin 504b, for a total of three drive units 500, but the disclosed technology is not limited to this. As another example, as shown in FIG. 16 , one drive unit 500 may be provided in common for multiple lift pins 504a and multiple lift pins 504b. This further reduces the space required for arranging the drive units 500, further improving the design flexibility of the substrate processing apparatus.

[0069] In the above embodiment, a capacitively coupled plasma has been described as an example of a plasma source used in the plasma processing apparatus 1, but the plasma source is not limited to this. Examples of plasma sources other than capacitively coupled plasma include inductively coupled plasma (ICP), microwave-excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), and helicon wave-excited plasma (HWP). Microwaves used in microwave-excited surface wave plasma (SWP) are an example of electromagnetic waves.

[0070] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0071] Furthermore, the following supplementary notes are disclosed regarding the above-described embodiment.

[0072] (Supplementary Note 1) A substrate processing apparatus comprising: a chamber; a stage provided within the chamber, the stage having a first surface on which a substrate is placed and a second surface provided around the first surface; an inner ring disposed on the second surface; an outer ring disposed outside the inner ring on the second surface; a first lifter that raises and lowers the inner ring; a second lifter that raises and lowers the outer ring, the second lifter having an upper end with a height lower than that of an upper end of the first lifter; and a drive unit configured to drive the first lifter and the second lifter simultaneously. (Supplementary Note 2) The substrate processing apparatus according to Supplementary Note 1, comprising a plurality of the first lifters, the second lifters, and the drive units, one drive unit provided for each of the first lifters and each of the second lifters, and each drive unit drives one of the first lifters and one of the second lifters simultaneously. (Supplementary Note 3) The substrate processing apparatus according to Supplementary Note 1, further comprising a plurality of the first lifters and the second lifters, and one of the drive units simultaneously drives the plurality of first lifters and the plurality of second lifters. (Supplementary Note 4) The substrate processing apparatus according to any one of Supplementary Notes 1 to 3, further comprising an intermediate ring having a through hole, a portion of which is disposed below the inner ring and another portion of which is disposed above the outer ring, the first lifter having an outer diameter smaller than the inner diameter of the through hole, and raising and lowering the inner ring via the through hole, and the intermediate ring being lifted by the outer ring which is lifted by the second lifter. (Appendix 5) A substrate processing apparatus described in any one of Appendices 1 to 3, further comprising an intermediate ring having a through hole and a portion thereof positioned below the inner ring, wherein the first lifter is configured to have: a first portion having an outer diameter greater than the inner diameter of the through hole; a second portion which is closer to the tip of the first lifter than the first portion and has an outer diameter smaller than the inner diameter of the through hole; and a step portion between the first portion and the second portion; wherein the inner ring is lifted by the tip of the second portion of the first lifter which rises through the through hole; and the intermediate ring is lifted by the step portion of the first lifter.(Supplementary Note 6) The substrate processing apparatus according to any one of Supplementary Notes 1 to 5, wherein the drive unit drives the first lifter to lift the inner ring in accordance with a wear amount of the inner ring. (Supplementary Note 7) A transport method for a substrate processing apparatus including: a chamber; a stage provided within the chamber, the stage having a first surface on which a substrate is placed and a second surface provided around the first surface; an inner ring disposed on the second surface; an outer ring disposed on the second surface outside the inner ring; a first lifter for raising and lowering the inner ring; a second lifter for raising and lowering the outer ring, the second lifter having an upper end height lower than an upper end height of the first lifter; a drive unit configured to simultaneously drive the first lifter and the second lifter; and a control unit, wherein the control unit performs the following steps: a) when transporting the inner ring, control the drive unit to raise the first lifter until a tip of the first lifter reaches a first height higher than a height of an upper surface of a pick of a transport arm that transports a substrate; and b) controlling the drive unit to raise the second lifter until a tip end of the second lifter reaches the first height when transporting the outer ring. (Supplementary Note 8) The transfer method according to Supplementary Note 7, wherein the substrate processing apparatus includes a plurality of the first lifters, the second lifters, and the drive unit, one drive unit is provided for each of the first lifters and each of the second lifters, and each drive unit drives one of the first lifters and one of the second lifters simultaneously. (Supplementary Note 9) The transfer method according to Supplementary Note 7, wherein the substrate processing apparatus includes a plurality of the first lifters and the second lifters, and one drive unit drives a plurality of the first lifters and a plurality of the second lifters simultaneously.(Appendix 10) The substrate processing apparatus further includes an intermediate ring having a through hole, a portion of which is positioned below the inner ring and another portion of which is positioned above the outer ring, the first lifter having an outer diameter smaller than the inner diameter of the through hole, in step a), the first lifter raises and lowers the inner ring through the through hole, and in step b), the intermediate ring is lifted by the outer ring which is lifted by the second lifter. This is a transport method described in any one of Appendices 7 to 9. (Supplementary Note 11) The transport method according to any one of Supplementary Notes 7 to 9, wherein the substrate processing apparatus further includes an intermediate ring having a through hole and a portion thereof disposed below the inner ring, and the first lifter is configured to have: a first portion having an outer diameter greater than an inner diameter of the through hole, a second portion that is closer to the tip of the first lifter than the first portion and has an outer diameter smaller than the inner diameter of the through hole, and a step portion between the first portion and the second portion, and in the step a), the intermediate ring is lifted by a tip of the second portion of the first lifter that rises through the through hole, and the control unit further performs the step of: c) controlling the drive unit to lift the first lifter until the step portion of the first lifter reaches the first height when transporting the intermediate ring. (Supplementary Note 12) The transport method according to any one of Supplementary Notes 7 to 11, wherein the control unit further performs the step of: d) controlling the drive unit to lift the inner ring in accordance with an amount of wear of the inner ring.

[0073] h through hole W substrate 1 plasma processing apparatus 2 control unit 2a computer 2a1 processing unit 2a2 memory unit 2a3 communication interface 10 plasma processing chamber 10a side wall 10e gas exhaust port 10s plasma processing space 11 substrate support 111 main body 111a central region 111b annular region 1110 base 1110a flow path 1111 electrostatic chuck 1111a ceramic member 1111b electrostatic electrode 1112 insulating ring 112 ring assembly 112a inner ring 112b lower ring 112c cover ring 13 shower head 13a gas supply port 13b gas diffusion chamber 13c gas inlet 20 gas supply unit 21 gas source 22 flow rate controller 30 power supply 31 RF power supply 31a First RF generating unit 31b Second RF generating unit 32 DC power supply 32a First DC generating unit 32b Second DC generating unit 40 Exhaust system 50 Lift mechanism 500 Drive unit 501 Cylinder 502 Connecting member 503 Thrust mechanism 504 Lift pin 504a1 First portion 504a2 Second portion 504a3 Step portion 60 Pick

Claims

1. A substrate processing apparatus comprising: a chamber; a stage provided within the chamber, the stage having a first surface on which a substrate is placed and a second surface provided around the first surface; an inner ring disposed on the second surface; an outer ring disposed outside the inner ring on the second surface; a first lifter for raising and lowering the inner ring; a second lifter for raising and lowering the outer ring, the second lifter having an upper end that is lower than the upper end of the first lifter; and a drive unit configured to simultaneously drive the first lifter and the second lifter.

2. The substrate processing apparatus according to claim 1, comprising a plurality of the first lifters, the second lifters, and the drive units, one drive unit for each of the first lifters and one of the second lifters, and each drive unit simultaneously driving one of the first lifters and one of the second lifters.

3. The substrate processing apparatus according to claim 1, comprising a plurality of the first lifters and the second lifters, and one drive unit drives a plurality of the first lifters and a plurality of the second lifters simultaneously.

4. A substrate processing apparatus as described in any one of claims 1 to 3, further comprising an intermediate ring having a through hole, a portion of which is positioned below the inner ring and another portion of which is positioned above the outer ring, wherein the first lifter has an outer diameter smaller than the inner diameter of the through hole and raises and lowers the inner ring through the through hole, and the intermediate ring is lifted by the outer ring which is lifted by the second lifter.

5. A substrate processing apparatus as described in any one of claims 1 to 3, further comprising an intermediate ring having a through hole and a portion thereof positioned below the inner ring, wherein the first lifter is configured to have: a first portion having an outer diameter greater than the inner diameter of the through hole; a second portion which is closer to the tip of the first lifter than the first portion and has an outer diameter smaller than the inner diameter of the through hole; and a step portion between the first portion and the second portion; wherein the inner ring is lifted by the tip of the second portion of the first lifter which rises through the through hole; and the intermediate ring is lifted by the step portion of the first lifter.

6. The substrate processing apparatus according to claim 1, wherein the drive unit drives the first lifter to lift the inner ring in accordance with the amount of wear of the inner ring.

7. A transport method in a substrate processing apparatus comprising: a chamber; a stage provided within the chamber, the stage having a first surface on which a substrate is placed and a second surface provided around the first surface; an inner ring disposed on the second surface; an outer ring disposed on the second surface outside the inner ring; a first lifter for raising and lowering the inner ring; a second lifter for raising and lowering the outer ring, the second lifter having an upper end height lower than that of the first lifter; a drive unit configured to simultaneously drive the first lifter and the second lifter; and a control unit, wherein the control unit: a) controls the drive unit to raise the first lifter when transporting the inner ring until a tip of the first lifter reaches a first height higher than the height of an upper surface of a pick of a transport arm that transports a substrate; b) controlling the drive unit to lift the second lifter until a tip end of the second lifter reaches the first height when transporting the outer ring.

8. The transport method according to claim 7, wherein the substrate processing apparatus comprises a plurality of the first lifters, the second lifters, and the drive units, one drive unit for each of the first lifters and one of the second lifters, and each drive unit simultaneously drives one of the first lifters and one of the second lifters.

9. The transport method according to claim 7, wherein a plurality of the first lifters and the second lifters are provided, and one drive unit drives a plurality of the first lifters and a plurality of the second lifters simultaneously.

10. A transport method described in any one of claims 7 to 9, wherein the substrate processing apparatus further comprises an intermediate ring having a through hole, a portion of which is positioned below the inner ring and another portion of which is positioned above the outer ring, the first lifter having an outer diameter smaller than the inner diameter of the through hole, in step a), the first lifter raises and lowers the inner ring through the through hole, and in step b), the intermediate ring is lifted by the outer ring which is lifted by the second lifter.

11. The substrate processing apparatus further comprises an intermediate ring having a through hole and a portion thereof disposed below the inner ring, the first lifter being configured to have: a first portion having an outer diameter greater than the inner diameter of the through hole; a second portion which is closer to the tip of the first lifter than the first portion and has an outer diameter smaller than the inner diameter of the through hole; and a step portion between the first portion and the second portion; in step a), the intermediate ring is lifted by the tip of the second portion of the first lifter which rises through the through hole; and the control unit further executes the step of c) controlling the drive unit so that when transporting the intermediate ring, the first lifter is raised until the step portion of the first lifter reaches the first height.

12. The conveying method according to claim 7, wherein the control unit further executes the step of: d) controlling the drive unit so as to lift the inner ring in accordance with the amount of wear of the inner ring.

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