Microneedle probe for measuring sap flow state of plant, and manufacturing method therefor

The microneedle probe addresses the limitations of invasive sap flow measurement methods by using MEMS technology with a micro-scale substrate, sensors, and insulating layers to ensure accurate and reliable sap flow measurement across diverse plant species, facilitating mass production.

WO2025254230A1PCT designated stage Publication Date: 2025-12-11TELOFARM INC
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Patent Information

Application Number
PCT/KR2024/007619
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-06-04
Publication Date
2025-12-11

AI Technical Summary

Technical Problem

Existing methods for measuring sap flow in plants are invasive, limited to certain tree species, and difficult to apply to smaller plants like tomatoes and vegetables, leading to unreliable measurement results and statistical insignificance due to small sample sizes and damage to plant tissues.

Method used

A microneedle probe with a micro-scale substrate, temperature measurement sensors, heaters, and insulating layers, designed for minimally invasive sap flow measurement using MEMS technology, which includes a heat transfer layer and insulating layer to prevent heat exchange and reduce corrosion, allowing accurate sap flow measurement.

Benefits of technology

The microneedle probe provides accurate, minimally invasive sap flow measurement with reduced risk of damage and corrosion, enabling reliable data collection across various plant species and facilitating mass production through MEMS and SMT technologies.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present invention relates to a microneedle probe for measuring a sap flow state of a plant, a device for measuring a sap flow state of a plant by using same, a handling dummy used in the manufacture of the microneedle probe, and a microneedle probe manufacturing method using same.
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Description

Microneedle probe for measuring the sap flow status of plants and method for manufacturing the same

[0001] The present invention relates to a microneedle probe for measuring the sap flow state of a plant, a device for measuring the sap flow state of a plant using the same, a handling dummy used in manufacturing a microneedle probe, and a method for manufacturing a microneedle probe using the same.

[0002]

[0003] Plant growth models directly impact plant yield and quality. Key plant biometric data that influence plant growth include temperature, sap flow (SF), and electrical conductivity (EC). These biometric data are used to determine watering schedules, temperature and light control, and the timing and amount of fertilizer application, ultimately determining the plant growth model.

[0004] Measurements for plant growth models have been limited to external environmental variables such as temperature and humidity, as well as destructive or indirect measurements. Traditional methods include measuring soil moisture, measuring water consumption, and measuring electrical conductivity by extracting plant sap. However, these methods provide indirect or in-depth information and provide insufficient clues for predicting plant responses.

[0005] For example, to measure the flow of sap in plants, a probe was inserted directly into the stem of the plant or a device in the form of an invasive needle was used to measure sap flow.

[0006] However, because these technologies utilize invasive needles measuring 1 to 5 mm in diameter, they are limited to tree species and difficult to insert into plants such as tomatoes, peppers, and other fruits and vegetables, as well as ornamental plants. Furthermore, the large, expensive, and complex measuring devices make it difficult to apply to multiple parts of a single crop or to multiple crops simultaneously. Consequently, the small sample size also hinders the reliability of measurement results and the establishment of statistical significance.

[0007] Since the Industrial Revolution, innovation has been rapidly occurring in agriculture, driven by advancements in biology and various other scientific and technological fields. In particular, advances in agriculture and ICT-based MEMS and nanotechnology are ushering in a new era in plant growth technologies.

[0008] There is a need to develop a technology that can measure biometric information of various plants, including trees, using minimally invasive technology. To achieve this, the implementation of precision measurement technology based on micro electro mechanical systems (MEMS) is necessary.

[0009] More specifically, in order to meet the requirement of minimal invasion, the size of the sensor inserted into the plant must be micro-scale, and the production of such microneedle probes is sometimes implemented using MEMS, a silicon processing technology.

[0010] However, if a separate drilling is performed before inserting the microneedle probe into the plant, the water vessels surrounding the hole will become deformed. Furthermore, the pressure exerted when the microneedle probe is inserted causes the water vessels it comes into contact with to contract. This prevents direct contact between the microneedle probe and the water vessels, making it impossible to accurately measure the plant's sap flow.

[0011] In addition, when the substrate of a microneedle probe is mainly made of silicon, the substrate using this silicon material is a brittle material at room temperature, and problems such as damage or impact on plant tissue occur when or while inserted into a plant.

[0012] The background technology described above is technical information that the inventor possessed for the purpose of deriving embodiments of the present invention or acquired during the derivation process, and cannot necessarily be said to be publicly known technology disclosed to the general public prior to the filing of the embodiments of the present invention.

[0013]

[0014] In order to solve the above problem, the present invention provides a micro needle probe in which a temperature measurement sensor or heater is laminated on a micro-scale substrate with a heat transfer layer and spaced apart at a predetermined interval and an insulating layer is formed therebetween, and a device for measuring the sap flow state of a plant using the same, a handling dummy used in manufacturing the micro needle probe, and a method for manufacturing the micro needle probe using the same.

[0015]

[0016] According to one embodiment of the present invention, a microneedle probe for measuring the sap flow state of a plant may include: a substrate having a length and width in microscale; a plurality of temperature measurement sensors arranged at predetermined intervals in the width direction on an upper surface of the substrate; a heater arranged at predetermined intervals between the temperature measurement sensors on the upper surface of the substrate; a plurality of heat transfer layers each laminated on top of the heater and the temperature measurement sensors to form a predetermined thickness; and an insulating layer laminated between the plurality of heat transfer layers on the upper surface of the substrate to form a predetermined thickness, thereby blocking heat generated from the heater from being exchanged between the heat transfer layers.

[0017] According to one embodiment of the present invention, the temperature measurement sensors may be characterized by having two.

[0018] According to one embodiment of the present invention, the distance between the temperature measurement sensor and the heater may be constant.

[0019] According to one embodiment of the present invention, the tolerance of the gap between the temperature measurement sensor and the heater may be characterized as being ±1 μm.

[0020] According to one embodiment of the present invention, the heat transfer layer may be formed of one or more materials selected from the group consisting of silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), and indium phosphide (InP).

[0021] According to one embodiment of the present invention, the insulation layer may be formed of one or more materials selected from the group consisting of epoxy, acrylic, and silicone.

[0022] According to one embodiment of the present invention, the substrate may be characterized as being a printed circuit board (PCB).

[0023] According to one embodiment of the present invention, the substrate may further include an insertion portion having one end formed sharply and inserted into the plant.

[0024] According to one embodiment of the present invention, the heater may be characterized as a resistance module that generates heat by applying current.

[0025] A device for measuring the state of sap flow of a plant according to one embodiment of the present invention may include a micro needle probe according to one embodiment of the present invention and a processor for measuring the state of sap flow by measuring the difference in temperature between a plurality of temperature measurement sensors by moving heat generated from a heater according to the flow of sap of the plant.

[0026] According to one embodiment of the present invention, the processor may include a processor that measures the sap flow status of the plant using the following mathematical formula.

[0027]

[0028] [Mathematical formula]

[0029]

[0030] Here, V is the velocity output parameter, is the temperature of the heater, The temperature is measured through a temperature measuring sensor formed upstream based on the direction in which the plant sap flows. It represents the temperature measured by a temperature measuring sensor formed on the downstream side based on the direction in which the plant sap flows.

[0031] According to one embodiment of the present invention, a handling dummy is a plate-shaped device having a length and width in a microscale for manufacturing a microneedle probe for measuring the state of sap flow in a plant, and may include a plurality of branches in a belt shape arranged side by side in a length direction and spaced apart at a predetermined interval in the width direction so as to allow a plurality of temperature measurement sensors and heaters to be stacked on one surface, and a handle connected to one end of the plurality of branches and having a notch formed along a surface connected to the branch so as to be easily separated from the branch.

[0032] According to one embodiment of the present invention, a predetermined spacing in the width direction of a plurality of branches may be characterized as being constant.

[0033] According to one embodiment of the present invention, the tolerance of a predetermined interval spaced apart in the width direction of the branch may be characterized as being ±1 μm.

[0034] According to one embodiment of the present invention, the branch may be characterized by being formed of one or more materials selected from the group consisting of silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), and indium phosphide (InP).

[0035] According to one embodiment of the present invention, the handling dummy may be formed of a silicon wafer, and the notch formed in the handle may be a scribe line formed in the silicon wafer.

[0036] A method for manufacturing a microneedle probe for measuring a sap flow state of a plant according to an embodiment of the present invention may include the steps of: providing a handling dummy according to an embodiment of the present invention; manufacturing an integrated circuit in which a heat transfer layer and a temperature measurement sensor or a heater are laminated on a branch through deposition, photolithography, and etching processes according to microelectromechanical systems (MEMS); laminating a substrate on an upper surface of the temperature measurement sensor and the heater; cutting a notch in the handling dummy to separate the handle from the branch; and laminating an insulating layer between a plurality of heat transfer layers formed on an upper surface of the substrate.

[0037] According to one embodiment of the present invention, the step of manufacturing an integrated circuit may be characterized by manufacturing it by laminating one heater between two temperature measurement sensors on top of a heat transfer layer.

[0038] According to one embodiment of the present invention, the step of laminating the substrate may be characterized by laminating by flip chip bonding.

[0039]

[0040] A microneedle probe according to one embodiment of the present invention has the advantage of having a strength that does not cause damage to the substrate while being inserted or while being inserted into a plant.

[0041] In addition, since the excellent heat transfer effect of the heat transfer layer allows for more sensitive measurement of temperature changes in sap, the sap flow status of the plant can be measured more accurately.

[0042] Additionally, since the temperature measurement sensor and heater (metal electrode) in the microneedle probe are closed by the substrate, heat transfer layer, and insulation layer, the risk of corrosion can be reduced.

[0043] In addition, a device for measuring the sap flow state of a plant including a micro needle probe according to one embodiment of the present invention can measure the flow state of a plant even with a relatively simple circuit configuration.

[0044] Additionally, since it does not require a large amount of electricity other than heating the heater, it has the advantage of being easy to use in farms with insufficient power facilities.

[0045] In addition, the handling dummy according to one embodiment of the present invention can maintain a constant spacing between branches, and the notch allows easy separation of the handle and the branches.

[0046] In addition, the method for manufacturing a microneedle probe according to one embodiment of the present invention can utilize general MEMS and SMT (Surface Mount Technology) technologies until the completion of the sensor, making it easy for mass production.

[0047] The effects that can be obtained from the invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by a person having ordinary skill in the art to which the present invention belongs from the description below.

[0048]

[0049] FIG. 1 illustrates a plan view of a microneedle probe according to one embodiment of the present invention.

[0050] FIG. 2 illustrates a cross-sectional view of a microneedle probe according to one embodiment of the present invention.

[0051] Figure 3 is a graph showing the change in measured temperature according to the rate of sap flow in a plant.

[0052] FIG. 4 illustrates a plan view, a side view, and a bottom view of a handling dummy according to one embodiment of the present invention.

[0053] FIG. 5 illustrates a flowchart of a method for manufacturing a microneedle probe according to one embodiment of the present invention.

[0054]

[0055] ※ Explanation of symbols

[0056] 100: Microneedle probe 110: Substrate

[0057] 111: Insertion part 120: Temperature measurement sensor

[0058] 130: Heater 140: Heat transfer layer

[0059] 141: First heat transfer layer 142: Second heat transfer layer

[0060] 150: Insulation layer 200: Handling dummy

[0061] 210: Branch 220: Handle

[0062] N: Notch

[0063]

[0064] The present invention will become clearer with reference to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided only to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. The present invention is defined solely by the scope of the claims. Meanwhile, the terminology used in this specification is for the purpose of describing the embodiments and is not intended to limit the present invention.

[0065] Throughout this specification, singular forms also include plural forms unless specifically stated otherwise in the text.

[0066] Throughout this specification, the terms "comprises" and / or "comprising" do not exclude the presence or addition of one or more other components, steps, operations and / or elements, and do not exclude other components unless specifically stated to the contrary, but rather include other components.

[0067] Terms such as “first” or “second” used throughout this specification may be used simply to distinguish the corresponding component from other corresponding components and do not limit the corresponding components in any other respect (e.g., importance or order).

[0068] Additionally, terms such as “unit” described throughout this specification mean a unit that processes at least one function or operation, which may be implemented as hardware or software, or a combination of hardware and software.

[0069] Additionally, when it is said throughout this specification that a part is "connected" to another part, this includes not only cases where it is "directly connected" but also cases where it is connected "with another structure in between."

[0070]

[0071] Hereinafter, the present invention will be described in more detail.

[0072] FIG. 1 illustrates a plan view of a microneedle probe (100) according to an embodiment of the present invention, and FIG. 2 illustrates a cross-sectional view of a microneedle probe according to an embodiment of the present invention.

[0073] Referring to FIGS. 1 and 2, a microneedle probe (100) according to one embodiment of the present invention may include a substrate (110), a temperature measurement sensor (120), a heater (130), a heat transfer layer (140), and an insulating layer (150).

[0074] The microneedle probe (100) according to the present invention can be inserted into the xylem (xylem) of a plant and measure the flow state of sap flowing within the xylem through minimally invasive actions. Here, the "sap flow state" includes data such as the flow rate of sap.

[0075] The substrate (110) is a member formed so that at least a portion thereof can be inserted into the interior of a plant, and may have a micro-scale length and width. In one embodiment, the substrate (110) may be formed as a printed circuit board. Furthermore, in one embodiment, the substrate (110) may be formed of a material such as FR-4.

[0076] Additionally, the substrate (110) may be formed to facilitate insertion into plants. More specifically, if one end of the substrate (110) includes a sharply formed insertion portion (111), penetration into the plant may be facilitated. In this case, damage to the substrate (110) or damage to plant tissues may be minimized when inserted into the plant.

[0077] Meanwhile, a temperature measurement sensor (120) or a heater (130) may be laminated on the upper surface of the substrate (110).

[0078] The temperature measurement sensor (120) is configured such that a plurality of temperature measurement sensors are arranged at predetermined intervals in the width direction on the upper surface of the substrate (110), and may have a predetermined length in the longitudinal direction of the substrate (110). The temperature measurement sensor (120) may have low resistance so that current supplied through a power source can flow, and may be manufactured by including at least one of materials through which current can flow, such as silver, nickel, and chromium.

[0079] The heater (130) is configured to be spaced apart from the temperature measurement sensor (120) on the upper surface of the substrate (110) and may have a predetermined length in the longitudinal direction of the substrate (110). In one embodiment, the heater (130) may be configured to be formed as a resistance module and generate heat by applying current generated from a power source.

[0080] In one embodiment, the heater (130) may be formed of a metal wire. When current is applied to the metal wire, heat generated from the heated metal wire can move along with the flow of plant sap. As a result, the metal wire loses heat to the sap, causing the temperature of the metal wire to change, which may manifest as a change in the resistance of the metal wire. Consequently, the temperature change can be calculated based on the change in resistance of the metal wire, and the flow rate of the sap can be calculated based on this.

[0081] The length of the temperature measurement sensor (120) and the heater (130) is shorter than the length of the substrate (110), and each of the temperature measurement sensor (120) and the heater (130) can be formed to have the same length.

[0082] In particular, the temperature measurement sensor (120) may be formed in two, and a heater (130) may be placed spaced apart between the two temperature measurement sensors (120). In addition, the spaced distance between the temperature measurement sensor (120) and the heater (130) may be formed to be constant.

[0083] Here, the tolerance of the gap between the temperature measurement sensor (120) and the heater (130) can be formed within a range of ±1 μm. This is the range of tolerance that occurs when irradiating light onto a photomask in the lithography process, and when formed within the tolerance range, the speed of the plant's sap flow can be measured more accurately.

[0084] Meanwhile, a heat transfer layer (140) may be further included on the upper portion of the temperature measurement sensor (120) and the heater (130). The heat transfer layer (140) is configured to allow heat generated from the heater (130) and heat received from the temperature measurement sensor (120) to be more easily transferred. The heat transfer layer (140) formed on the upper portion of the heater (130) may be divided into a first heat transfer layer (141), and the heat transfer layer (140) formed on the upper portion of the temperature measurement sensor (120) may be divided into a second heat transfer layer (142).

[0085] These heat transfer layers (the first heat transfer layer (141) and the second heat transfer layer (142)) may be formed of elements with high thermal conductivity so that the generated heat can be transferred more easily. In one embodiment according to the present invention, the heat transfer layer (140) may be formed of one or more materials selected from the group consisting of silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), and indium phosphide (InP). The first heat transfer layer (141) and the second heat transfer layer (142) may be formed of the same element or different elements.

[0086] The microneedle probe (100) according to the present invention with the above structure has the advantage of reducing the risk of corrosion because the temperature measurement sensor (120) and the heater (130) are closed by the substrate (110), the heat transfer layer (140), and the insulation layer (150). That is, when the temperature measurement sensor (120) and the heater (130) are formed of metal electrodes and come into direct contact with the sap inside the plant, the temperature measurement sensor (120) and the heater (130) may react with mineral ions, etc. inside the sap, causing electrochemical deformation. On the other hand, in the microneedle probe (100) according to the present invention, the temperature measurement sensor (120) and the heater (130) do not come into contact with external factors, so the above-described problem can be overcome.

[0087] Meanwhile, the flow of heat moving to the heater (130), temperature measurement sensor (120), and heat transfer layer (140) is as follows.

[0088] The heat generated from the heater (130) formed on the upper surface of the substrate (110) moves from the lower surface to the upper surface of the first heat transfer layer (141). The heat moved to the upper surface of the first heat transfer layer (141) moves in the direction of the flow of the plant's sap, and this flow flows to the upper surfaces of a plurality of second heat transfer layers (142). Since the second heat transfer layer (142) has high thermal conductivity due to its characteristics, the heat formed on the upper surface of the second heat transfer layer (142) moves to the lower surface of the second heat transfer layer (142), and the heat can be transferred to the temperature measurement sensor (120) laminated on the lower surface of the second heat transfer layer (142). Due to the excellent heat transfer effect of the heat transfer layer (140), the temperature change of the sap can be sensitively responded to and quickly measured, so that the state of the plant's sap flow can be measured more accurately.

[0089] Here, in order to prevent the heat generated from the heater (130) from directly moving to the temperature measurement sensor (120), an insulating layer (150) may be formed between the heat transfer layers (140). More specifically, in order to block the heat generated from the heater (130) from being exchanged between the heat transfer layers (140), i.e., the first heat transfer layer (141) and the second heat transfer layer (142) formed on the upper surface of the substrate (110), an insulating layer (150) is formed between the heat transfer layers (140).

[0090] This insulating layer (150) may be formed of a component with low thermal conductivity so that generated heat can be more easily blocked. In one embodiment of the present invention, the insulating layer (150) may be formed of one or more materials selected from epoxy, acrylic, and silicone.

[0091] For example, when the first heat transfer layer (141) and the second heat transfer layer (142) are made of silicone, the insulation layer (150) is made of epoxy, and the substrate (110) is made of FR-4, the thermal conductivity of silicone is 130 (W / mK), while the thermal conductivities of epoxy and FR-4 are 0.27 (W / mK) and 0.25 (W / mK), respectively, which are significantly different.

[0092] Ultimately, the heat generated from the heater (130) can only be transferred to the first heat transfer layer (141) formed on top of the heater (130). In addition, the heat transferred to the temperature measurement sensor (120) can only be transferred to the second heat transfer layer (142) formed on top of the temperature measurement sensor (120).

[0093]

[0094] Meanwhile, a device for measuring the sap flow state of a plant including a micro needle probe (100) according to an embodiment of the present invention may include a processor (not shown) that can measure the sap flow state of the plant by measuring the heat generated from the heater (130) at the temperature measuring sensor (120).

[0095] The processor may include a resistance measurement module, a temperature calculation module, and a flow calculation module. These modules may be formed in the form of a circuit. The resistance measurement module may measure a change in resistance of the resistance module due to heating or cooling. The temperature calculation module may calculate a change in temperature of the resistance module using a change in resistance of the resistance measurement module. At this time, the temperature coefficient of resistance may be used to calculate the temperature change according to the change in resistance. The flow calculation module may calculate the flow rate of the fluid using a change in temperature.

[0096] Meanwhile, the processor can be understood as a concept including a resistance measurement module, a temperature calculation module, and a flow rate calculation module, and is not necessarily limited to the form of a single physical chip. When the processor is formed on the substrate (110), the resistance measurement module, the temperature calculation module, and the flow rate calculation module may be integrated into one chip or provided in two or more chips. Alternatively, while the resistance measurement module is formed on the substrate (110), at least one of the temperature calculation module and the flow rate calculation module may be spaced apart from the substrate (110). In this case, the resistance and resistance change value of the resistance module measured by the resistance measurement module can be transmitted to the outside of the substrate (110) in a wired or wireless manner by a communication module (not shown).

[0097] In particular, the processor transmits the temperature value measured from the temperature measurement sensor (120) to the processor, and based on the data value, the state of sap flow of the plant can be measured using the mathematical formula below.

[0098]

[0099] [Mathematical formula]

[0100]

[0101] Here, V is the velocity output parameter, is the temperature of the heater (130), The temperature is measured through a temperature measurement sensor (120) formed on the upstream side based on the direction in which the plant sap flows. It represents the temperature measured through a temperature measurement sensor (120) formed on the downstream side based on the direction in which the plant sap flows.

[0102] When a microneedle probe (100) according to an embodiment of the present invention is inserted across the direction in which the sap of a plant flows and heat is generated from the heater (130), the heat moves along the surface in contact with the heat transfer layer (140) of the microneedle probe (100) in the direction in which the sap moves. According to this movement of heat, the temperature (measured by the temperature measuring sensor (120) formed on the upstream side based on the direction in which the sap of the plant flows) ) is the temperature measured by the temperature measuring sensor (120) formed on the downstream side. ) is formed lower than the

[0103] Figure 3 is a graph showing the change in measured temperature according to the rate of sap flow in a plant.

[0104] Referring to (a) of Fig. 3, the temperature measured by the temperature measuring sensor (120) formed on the downstream side in a predetermined measurement range ) and the temperature measured by the temperature measuring sensor (120) formed on the upstream side ( ) increases with increasing flow rate, while the temperature of the heater (130) ) and the temperature measured by the temperature measuring sensor (120) formed on the downstream side ( ) can be confirmed to decrease by about 5% when the flow rate increases. Therefore, referring to (b) of Fig. 3, the flow rate calculation parameter according to the above mathematical formula is the temperature ( ) and the temperature measured by the temperature measuring sensor (120) formed on the upstream side ( ) can be confirmed to show a similar increase rate to the difference value.

[0105] As a result, the present invention simply measures the temperature (120) measured by the temperature measuring sensor (120) formed on the downstream side, as shown in (b) of Fig. 3. ) and the temperature measured by the temperature measuring sensor (120) formed on the upstream side ( ) has the advantage of being able to easily measure the sap flow status of a plant by normalizing it regardless of the change in input power value that occurs when measuring only through the difference value.

[0106] In addition, since no large power is required other than heating the heater (130) to measure the sap flow status of the plant, it can be used very easily in agricultural environments where power facilities are insufficient.

[0107]

[0108] Meanwhile, when manufacturing a microneedle probe (100) according to an embodiment of the present invention, it is important to maintain a constant gap between the temperature measurement sensor (120) and the heater (130). This is because if the gap deviates from the tolerance, the speed of sap flow in the plant cannot be accurately measured.

[0109] Accordingly, when manufacturing a micro needle probe (100), a handling dummy (200) can be used to maintain the gap between the temperature measurement sensor (120) and the heater (130).

[0110] FIG. 4 illustrates a plan view, a side view, and a bottom view of a handling dummy according to one embodiment of the present invention.

[0111] A handling dummy (200) according to one embodiment of the present invention may have a plate shape with a length and width in micro scale and may include a branch (210) and a handle (220).

[0112] Referring to FIG. 4, the branches (210) are shaped like a belt, and a plurality of them can be arranged side by side in the length direction at predetermined intervals in the width direction of the handling dummy (200). A portion on which a temperature measurement sensor (120) or a heater (130) can be stacked can be formed on one surface of the branch (210).

[0113] The handle (220) is connected to one end of the branch (210) to facilitate transport of the handling dummy (200) and to maintain the gap between the branches (210).

[0114] Here, a notch (notch; N) is formed along the surface connecting the handle (220) and the branch (210), so that the handle (220) and the branch (210) can be separated more easily. That is, in the process of manufacturing the micro needle probe (100) according to one embodiment of the present invention, after designing an integrated circuit on the upper surface of the handling dummy (200), a predetermined force can be applied to the surface of the handling dummy (200) where the notch is formed to separate the handle (220) so that the handle (220) can be removed more easily. This has the advantage of making it possible to maintain a constant distance between the temperature measurement sensor (120) and the heater (130) through the branch (210) while facilitating the transport of the handling dummy (200).

[0115] In particular, when the handling dummy (200) is formed of a silicon wafer, the notch (N) formed in the handle (220) can be formed as a scribe line formed in the silicon wafer. When a predetermined impact is applied to a single crystal silicon wafer, a plurality of chips are easily separated along the scribe line, which is a boundary between chips. When the handling dummy (200) of the present invention is manufactured from a silicon wafer, the notch (N) formed in the silicon wafer can be formed to coincide with the scribe line, thereby making it easier to separate the handle (220) and the branch (210).

[0116] In addition, a predetermined interval spaced apart in the width direction of a plurality of branches (210) may be formed at a constant interval. In a method for manufacturing a microneedle probe (100) according to an embodiment of the present invention, a heater (130) and a temperature measurement sensor (120) are arranged on the upper surface of the branch (210), and a predetermined interval may be formed at a constant interval in order to more accurately measure the speed of plant sap flow.

[0117] A predetermined tolerance spaced apart in the width direction of these branches (210) can be formed within a range of ±1 μm. As previously described with respect to the microneedle probe (100), this may correspond to the range of tolerance that occurs when irradiating light onto a photomask during a lithography process. When formed within the above tolerance range, the speed of sap flow of the plant being measured can be measured more accurately.

[0118] Additionally, the branch (210) may be formed of one or more materials selected from the group consisting of silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), and indium phosphide (InP). In a method for manufacturing a microneedle probe (100) according to an embodiment of the present invention, the branch (210) is formed of a heat transfer layer (140), and thus may have the same configuration as the heat transfer layer (140) described above.

[0119]

[0120] Hereinafter, a method (S1) for manufacturing a micro needle probe (100) according to one embodiment of the present invention will be described in more detail.

[0121] FIG. 5 illustrates a flowchart of a method for manufacturing a microneedle probe according to one embodiment of the present invention.

[0122] Referring to FIG. 5, a method (S1) for manufacturing a microneedle probe (100) according to an embodiment of the present invention may include a step (S10) of providing a handling dummy (200), a step (S20) of manufacturing an integrated circuit, a step (S30) of stacking a substrate (110), a step (S40) of separating a handle (220), and a step (S50) of stacking an insulating layer (150).

[0123] The step (S10) of providing a handling dummy (200) is a step of providing a handling dummy (200), which is an embodiment of the present invention as mentioned above. In particular, the branches (210) of the handling dummy (200) are formed in multiple pieces and arranged at predetermined intervals in the width direction of the handling dummy (200).

[0124] The step (S20) of manufacturing an integrated circuit is a step of forming a circuit in a branch (210), and a heat transfer layer (140) and a temperature measurement sensor (120) or a heater (130) can be formed by stacking them through deposition, photolithography, and etching processes according to micro-electro-mechanical systems (MEMS). The micro-electro-mechanical technology used in the step of manufacturing an integrated circuit can be manufactured by a deposition and patterning process used in general semiconductor chip manufacturing.

[0125] In particular, as the last process of the step (S20) of manufacturing the above integrated circuit, a plurality of heat transfer layers (140) spaced apart at a predetermined interval and a temperature measurement sensor (120) or a heater (130) can be formed so that the upper surface of the heat transfer layer (140) can be laminated through a Deep RIE (Reactive Ion Etching) process. Here, the heat transfer layer (140) is formed by etching the branches (210), and as the space between the branches (210) is removed by etching, the remaining branch (210) portion can be formed as the heat transfer layer (140).

[0126] The number and installation locations of the temperature measurement sensors (120) and heaters (130) may vary depending on the method for measuring the sap flow status of the plant. In one embodiment, a heater (130) may be stacked between two temperature measurement sensors (120) in a handling dummy (200) having three branches (210). Since the branches (210) are formed into a heat transfer layer (140) through an etching process to be described below, the heater (130) may be formed between the temperature measurement sensors (120) on the upper surface of the heat transfer layer (140).

[0127] The step (S30) of laminating the substrate (110) is a step of combining the temperature measurement sensor (120) and the heater (130) with the substrate (110). The temperature measurement sensor (120) and the heater (130) are laminated on the upper surface of the branch (210), i.e., the heat transfer layer (140), and the substrate (110) can be formed by laminating the temperature measurement sensor (120) and the heater (130) on the upper surface of the temperature measurement sensor (120) and the heater (130).

[0128] In particular, when stacking the substrate (110) on the upper surface of the temperature measurement sensor (120) and the heater (130), the stacking can be done by the flip chip bonding method. The flip chip bonding technology is a technology that flips the chip over and attaches it to the substrate (110) or another chip. In the case of the present invention, an integrated circuit manufactured using ultra-small precision machine technology can be flipped over and attached to the upper surface of the substrate (110) on the branch (210). In the present invention, the step of the flip chip bonding can be performed as a general process step such as a UBM (Under Bump Metallization) formation process, a bump formation process, a bonding process, an underfill, and a curing process on a wafer.

[0129] The step (S40) of separating the handle (220) is a step of removing a portion of the handling dummy (200) except for the branch (210), and a predetermined force is applied to the surface of the handling dummy (200) where the notch is formed, so that the handle (220) can be separated with the notch as the boundary. This has the advantage of being able to manufacture a heat transfer layer (140) through the branch (210) and at the same time maintain a constant distance between the temperature measurement sensor (120) and the heater (130).

[0130] The step (S50) of laminating an insulating layer (150) is a step of forming an insulating layer (150) in the etched portion between the heat transfer layers (140), and the insulating layer (150) is laminated in the space on the upper surface of the substrate (110) between the heat transfer layers (140). This is to prevent heat generated from the heater (130) from being directly exchanged with the temperature measurement sensor (120).

[0131] The manufacturing method (S1) of a micro needle probe (100) according to one embodiment of the present invention has the advantage of being easy for mass production since general MEMS and SMT (Surface Mount Technology) technologies can be used until the completion of the sensor.

[0132] A microneedle probe (100) manufactured through a method (S1) for manufacturing a microneedle probe (100) for measuring the sap flow state of a plant according to an embodiment of the present invention may include all of the configurations of a microneedle probe (100) for measuring the sap flow state of a plant according to an embodiment of the present invention.

[0133]

[0134] Although the present invention has been described above with reference to limited embodiments, the present invention is not limited thereto, and it is obvious that various modifications and variations are possible within the scope of the technical idea of ​​the present invention and the equivalent scope of the patent claims to be described below by a person having ordinary skill in the art to which the present invention pertains.

Claims

1. A substrate having a length and width in microscale; A plurality of temperature measurement sensors arranged at predetermined intervals in the width direction on the upper surface of the above substrate; A heater disposed spaced apart from the temperature measurement sensors on the upper surface of the substrate; A plurality of heat transfer layers each laminated on top of the heater and the temperature measurement sensor to form a predetermined thickness; and A micro needle probe for measuring the sap flow state of a plant, comprising an insulating layer formed between a plurality of heat transfer layers on the upper surface of the substrate to form a predetermined thickness, thereby blocking heat generated from the heater from being exchanged between the heat transfer layers.

2. In paragraph 1, A micro needle probe for measuring the sap flow status of a plant, characterized in that the above temperature measuring sensors are two in number.

3. In paragraph 2, A micro needle probe for measuring the sap flow status of a plant, characterized in that the gap between the temperature measuring sensor and the heater is constant.

4. In paragraph 3, The tolerance of the gap between the above temperature measuring sensor and the above heater is A microneedle probe for measuring the sap flow status of a plant, characterized by a diameter of ±1 μm.

5. In paragraph 1, The above heat transfer layer, A microneedle probe for measuring the sap flow status of a plant, characterized in that it is formed of one or more materials selected from the group consisting of silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), and indium phosphide (InP).

6. In paragraph 1, The above insulation layer is, A microneedle probe for measuring the sap flow status of a plant, characterized in that it is formed of one or more materials selected from the group consisting of epoxy, acrylate, and silicone.

7. In paragraph 1, The above substrate is, A microneedle probe for measuring the sap flow status of a plant, characterized by being a printed circuit board (PCB).

8. In paragraph 1, The above substrate is, A microneedle probe for measuring the sap flow status of a plant, further comprising an insertion portion that is formed sharply at one end and inserted into the plant.

9. In paragraph 1, The above heater, A microneedle probe for measuring the sap flow status of a plant, characterized by being a resistance module that generates heat by applying current.

10. A microneedle probe according to any one of claims 1 to 9, A device for measuring the state of sap flow of a plant, comprising a processor that measures the state of sap flow by measuring the difference in temperature between the heat generated from the heater and the temperature measured by a plurality of temperature measurement sensors according to the flow of sap of the plant.

11. In paragraph 10, The above processor, A device for measuring the sap flow state of a plant, comprising a processor for measuring the sap flow state of the plant using the following mathematical formula. [Mathematical formula] Here, V is the velocity output parameter, is the temperature of the above heater, The temperature measured through the temperature measuring sensor formed on the upstream side based on the direction in which the sap of the plant flows, It represents the temperature measured by the temperature measuring sensor formed on the downstream side based on the direction in which the sap of the plant flows.

12. A plate-shaped handling dummy having a length and width in microscale for manufacturing a microneedle probe for measuring the sap flow status of a plant. A plurality of branches in the shape of a belt arranged side by side in the length direction and spaced apart at a predetermined interval in the width direction so that a plurality of temperature measurement sensors and heaters can be stacked on one side, A handling dummy comprising a handle connected to one end of a plurality of said branches and having a notch formed along a surface connected to said branches so as to be easily separated from said branches.

13. In paragraph 12, A handling dummy, characterized in that a predetermined interval spaced apart in the width direction of a plurality of said branches is constant.

14. In paragraph 13, A tolerance of a predetermined interval spaced in the width direction of the above branch is A handling dummy characterized by a thickness of ±1μm.

15. In paragraph 12, The above branch is, A handling dummy characterized by being formed of one or more materials selected from the group consisting of silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), and indium phosphide (InP).

16. In paragraph 12, The above handling dummy is formed of a silicon wafer, A handling dummy, characterized in that the notch formed in the handle is a scribe line formed in the silicon wafer.

17. A step of providing the handling dummy of any one of claims 12 to 16; A step of manufacturing an integrated circuit in which a heat transfer layer and the temperature measurement sensor or heater are laminated and formed through deposition, photolithography and etching processes according to microelectromechanical systems (MEMS) technology on the above branch; A step of laminating a substrate on the upper surface of the temperature measuring sensor and heater; a step of cutting the notch of the handling dummy to separate the handle from the branch; and A method for manufacturing a microneedle probe for measuring the sap flow status of a plant, comprising the step of laminating an insulating layer between a plurality of heat transfer layers formed on the upper surface of the substrate.

18. In paragraph 17, The steps of manufacturing the above integrated circuit are: A method for manufacturing a microneedle probe for measuring the sap flow status of a plant, characterized in that one of the above heaters is laminated on the upper part of the heat transfer layer between the two above temperature measuring sensors.

19. In paragraph 17, The step of laminating the above substrate is: A method for manufacturing a microneedle probe for measuring the sap flow status of a plant, characterized by laminating by flip chip bonding.

Citation Information

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