Relay, control method, electronic device, power system, and storage medium

Abstract

A relay (100), comprising a core assembly (10), a thermoelectric cooler (20), and a controller (90). The core assembly (10) comprises a high-voltage movable terminal (11) and a sealing member (12) for sealing and isolating the high-voltage movable terminal (11). The thermoelectric cooler (20) is thermally coupled to the sealing member (12). The controller (90) is configured to control the thermoelectric cooler (20) to dissipate heat for the core assembly (10) when a loop current of the relay (100) is greater than a preset current value or the temperature of the core assembly (10) is higher than a preset temperature value.

Description

Relays, control methods, electronic devices, power systems and storage media

[0001] Priority information

[0002] This application claims priority and benefits to patent application No. 2024108188188, filed with the China National Intellectual Property Administration on June 21, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of relay technology, and in particular to a relay, control method, electronic device, power system, and storage medium. Background Technology

[0004] The core of a relay consists of a high-voltage moving terminal and a sealing component that isolates the high-voltage moving terminal. Currently, it is mainly cooled by natural heat dissipation. However, due to the compact design of the structure, the heat dissipation effect is poor, which affects the service life of the relay. Summary of the Invention

[0005] This application aims to at least solve one of the technical problems existing in the prior art. To this end, embodiments of this application provide a relay, a control method, an electronic device, a power system, and a storage medium. The relay includes a core, a thermoelectric cooler, and a controller. The core includes a high-voltage moving terminal and a seal that isolates the high-voltage moving terminal. The thermoelectric cooler is thermally coupled to the seal. The controller is configured to control the thermoelectric cooler to dissipate heat from the core when the relay's circuit current exceeds a preset current value or the core's temperature exceeds a preset temperature value.

[0006] In this way, the semiconductor cooler can dissipate heat from the sealed components, and in turn, dissipate heat from the high-voltage moving terminals located within the sealed components. This allows the heat generated by the high-voltage contacts located within the core to dissipate quickly, preventing damage and aging of the relay and improving its service life.

[0007] In some embodiments, the thermoelectric cooler includes a plurality of thermoelectric coolers, each thermoelectric cooler having a cooling surface that is thermally coupled to a seal.

[0008] In this way, the cooling surface of the semiconductor refrigeration chip can absorb heat, and the thermal coupling between the cooling surface and the seal can absorb the heat of the seal and transfer the heat of the seal to achieve heat dissipation of the seal.

[0009] In some embodiments, the thermoelectric cooler includes a first parallel circuit, a second parallel circuit, a positive terminal, and a negative terminal. The thermoelectric cooler also includes a heating surface, which is thermally coupled to the cooling surface. The controller is electrically connected to multiple heating surfaces through the positive terminal and the first parallel circuit, and the controller is also electrically connected to multiple heating surfaces through the negative terminal and the second parallel circuit.

[0010] Thus, thermoelectric coolers can also utilize the Peltier principle for cooling. This means that a thermoelectric cooler can use two different semiconductor materials to form an electrical circuit, and by passing a direct current through this circuit, heat can be dissipated from the inside of the sealed component. A controller can control the cooling of the thermoelectric cooler by inputting a control current.

[0011] In some embodiments, the relay also includes thermally conductive adhesive disposed between the cooling surface and the seal.

[0012] In this way, the thermally conductive adhesive can securely connect the cooling surface to the seal, preventing the cooling surface from detaching from the seal. Furthermore, the thermally conductive adhesive also has excellent thermal conductivity, improving the relay's heat dissipation efficiency.

[0013] In some embodiments, the relay includes a high-voltage stationary terminal and a temperature sensor, the high-voltage moving terminal being configured to connect to the high-voltage stationary terminal, and the temperature sensor being configured to detect the temperature of the high-voltage stationary terminal to obtain the temperature of the core.

[0014] In this way, the controller can obtain the detection value of the temperature sensor to determine the temperature of the core, and control the semiconductor cooler to dissipate heat from the core when the core temperature is higher than the preset temperature value.

[0015] In some implementations, the relay includes a current sensor configured to detect the loop current.

[0016] In this way, the controller can determine the loop current based on the detection value of the current sensor, and control the semiconductor cooler to dissipate heat from the core when the loop current of the relay is greater than the preset current value.

[0017] This application also provides a control method, including: controlling a semiconductor cooler to dissipate heat from the core when the circuit current of the relay is greater than a preset current value or the temperature of the core is higher than a preset temperature value.

[0018] In some implementations, the control method includes controlling the operating current of the thermoelectric cooler according to relevant control parameters to control the thermoelectric cooler to dissipate heat from the core. The relevant control parameters include proportional coefficient, integral coefficient, derivative coefficient, and the temperature value or loop current value of the core.

[0019] In this way, the controller can control the operating current of the thermoelectric cooler based on the proportional-integral-derivative (PID) algorithm, thereby controlling the power of the thermoelectric cooler to dissipate heat from the core.

[0020] In some implementations, the core temperature value includes temperature sample value and / or temperature change value, and the loop current value includes current sample value and / or current change value.

[0021] In this way, the controller can control the operating current of the thermoelectric cooler based on the temperature sampling value or the temperature change value, and the controller can also control the operating current of the thermoelectric cooler based on the current sampling value or the current change value.

[0022] In some implementations, the preset current threshold, proportional coefficient, integral coefficient, and derivative coefficient are determined based on the start-up time of the thermoelectric cooler, the ambient temperature outside the relay, the current sampling value, and the current change value.

[0023] In this way, after the semiconductor cooler completes one operation, the proportional coefficient, integral coefficient, derivative coefficient and preset current threshold can be updated in real time by combining machine learning algorithms, so that the controller's control strategy can be continuously optimized.

[0024] In some implementations, when the temperature sample value is higher than or equal to a preset temperature threshold, the operating current of the semiconductor cooler is controlled according to the temperature sample value, proportional coefficient, integral coefficient, and derivative coefficient until the temperature sample value is lower than the preset temperature threshold.

[0025] In this way, the controller can control the operating current of the semiconductor cooler based on the PID algorithm, so that the temperature of the core is lower than the preset temperature threshold, thereby reducing the operating temperature of the relay.

[0026] In some implementations, the preset temperature threshold, proportional coefficient, integral coefficient, and derivative coefficient are determined based on the start-up time of the thermoelectric cooler, the ambient temperature outside the relay, the temperature sampling value, and the temperature change value.

[0027] In this way, after the semiconductor cooler completes one operation, the proportional coefficient, integral coefficient, derivative coefficient and preset temperature threshold can be updated in real time by combining machine learning algorithms, so that the controller's control strategy can be continuously optimized.

[0028] In some implementations, the control semiconductor cooler stops operating when the relay is disconnected.

[0029] In this way, when the relay is disconnected, the relay will not generate a lot of heat, and the thermoelectric cooler can stop working to save the energy consumed by the thermoelectric cooler.

[0030] This application provides an electronic device, which includes a memory and a processor. The memory is configured to store a computer program, and the processor executes the computer program to implement the above-described control method.

[0031] This application provides a power system that includes the relays or electronic devices described in the above embodiments.

[0032] This application also provides a computer-readable storage medium storing a computer program that, when executed by one or more processors, implements the above-described control method.

[0033] This application provides a relay, a control method, an electronic device, a power system, and a storage medium. The relay includes a core, a thermoelectric cooler, and a controller. The core includes a high-voltage moving terminal and a sealing element that isolates the high-voltage moving terminal. The thermoelectric cooler is thermally coupled to the sealing element. The controller is configured to control the thermoelectric cooler to dissipate heat from the core when the relay's circuit current exceeds a preset current value or the core's temperature exceeds a preset temperature value. The thermoelectric cooler dissipates heat from the sealing element, thereby dissipating heat from the high-voltage moving terminal located within the sealing element. This allows the heat generated by the high-voltage contacts within the core to dissipate quickly, preventing damage and aging of the relay and extending its service life.

[0034] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0035] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, wherein:

[0036] Figure 1 is a schematic diagram of the structure of the relay according to an embodiment of this application;

[0037] Figure 2 is a schematic diagram of the relay frame according to an embodiment of this application;

[0038] Figure 3 is a schematic diagram of the core structure according to an embodiment of this application;

[0039] Figure 4 is a schematic diagram of the frame of the electronic device according to an embodiment of this application;

[0040] Figure 5 is a schematic diagram of the semiconductor cooler arrangement according to an embodiment of this application;

[0041] Figure 6 is a schematic diagram of the structure of a semiconductor cooler according to an embodiment of this application;

[0042] Figure 7 is a schematic diagram of the structure of the coil assembly according to an embodiment of this application;

[0043] Figure 8 is a schematic diagram of the sensor arrangement position according to an embodiment of this application;

[0044] Figure 9 is a schematic diagram showing the power variation of the cooling and heating surfaces in an embodiment of this application;

[0045] Figure 10 is a schematic diagram of the control strategy of the relay according to an embodiment of this application;

[0046] Figure 11 is a schematic diagram of the control flow of relay combined with current sampling according to an embodiment of this application;

[0047] Figure 12 is a schematic diagram of the control flow of relay combined with temperature sampling according to an embodiment of this application;

[0048] Figure 13 is a schematic diagram of a power system according to an embodiment of this application;

[0049] Figure 14 is a schematic diagram of a computer-readable storage medium according to an embodiment of this application.

[0050] Reference numerals: Core 10, High-voltage moving terminal 11, Seal 12, Iron core 13, High-voltage stationary terminal 14, External connection terminal 15, Semiconductor cooler 20, Semiconductor cooler chip 21, Cooling surface 211, Heating surface 212, First parallel circuit 221, Second parallel circuit 222, Connection terminal 30, Connection terminal positive electrode 31, Connection terminal negative electrode 32, Thermally conductive adhesive 40, Coil assembly 50, Coil 51, Encapsulating adhesive 52, Arc-extinguishing magnet 61, Arc-extinguishing cover 62, Upper housing 71, Lower housing 72, Sensor assembly (temperature sensor / current sensor) 80, Controller 90, Relay 100, Electronic device 200, Memory 210, Processor 220, Power system 1000, Computer-readable storage medium 2000. Detailed Implementation

[0051] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.

[0052] The core of a relay consists of a high-voltage moving terminal and a sealing component that isolates the high-voltage moving terminal. Currently, it is mainly cooled by natural heat dissipation. However, due to the compact design of the structure, the heat dissipation effect is poor, which affects the service life of the relay.

[0053] In related technologies, the heat sources of a relay are located at the contact points of the high-voltage moving and stationary terminals, and the control coil. The space around the control coil can be reinforced with potting compound to improve heat dissipation in the low-voltage system and extend the lifespan of the control coil. However, due to the isolation between the high and low voltage systems, the effect of potting compound on heat dissipation at the relay contact points is minimal, and this heat dissipation solution cannot be applied inside the relay core. Therefore, the relay core primarily relies on natural heat dissipation for cooling.

[0054] Referring to Figures 1 and 2, this application provides a relay 100, which includes a core 10, a thermoelectric cooler 20, and a controller 90. The core 10 includes a high-voltage moving terminal 11 and a sealing element 12 that seals and isolates the high-voltage moving terminal 11. The thermoelectric cooler 20 is thermally coupled to the sealing element 12. The controller 90 is configured to control the thermoelectric cooler 20 to dissipate heat from the core 10 when the loop current of the relay 100 exceeds a preset current value or the temperature of the core 10 exceeds a preset temperature value.

[0055] The semiconductor cooler 20 can dissipate heat from the seal 12, thereby dissipating heat from the high-voltage moving terminal 11 located within the seal 12. This allows the heat generated by the high-voltage contacts located within the core 10 to dissipate quickly, preventing heat from accumulating inside the relay 100. This also prevents damage and aging of the relay 100 and improves its service life.

[0056] Specifically, referring to Figure 3, the relay 100 may further include a high-voltage stationary terminal 14. The high-voltage moving terminal 11 may be configured as the moving contact of the relay 100, and the high-voltage stationary terminal 14 may be configured as the stationary contact of the relay 100. When the high-voltage moving terminal 11 and the high-voltage stationary terminal 14 are in contact, the internal wiring of the relay 100 is connected to allow current to flow through the relay 100, and the relay 100 is in a closed state. When the high-voltage moving terminal 11 and the high-voltage stationary terminal 14 are disconnected, the internal wiring of the relay 100 is disconnected and current is not allowed to flow through the relay 100, and the relay 100 is in an open state.

[0057] Both the high-voltage moving terminal 11 and the iron core 13 can be disposed inside the seal 12. A portion of the high-voltage stationary terminal 14 can be disposed inside the seal 12, while the other portion of the high-voltage stationary terminal 14 can be disposed outside the seal 12 and connected to the external connection terminal 15 of the relay 100. When a magnetic field is generated inside the seal 12, the iron core 13 is activated, and a portion of the high-voltage moving terminal 11 contacts the high-voltage stationary terminal 14 inside the seal 12, causing the relay 100 to be in a closed state, and the two external connection terminals 15 of the relay 100 to be connected. When the magnetic field inside the seal 12 disappears, the high-voltage moving terminal 11 is disconnected from the high-voltage stationary terminal 14, causing the relay 100 to be in an open state, and the two external connection terminals 15 of the relay 100 to be disconnected.

[0058] The seal 12 can be made of ceramic. Ceramic materials have high hardness, high melting point, and do not deform under high temperature and impact, nor melt under electric arc, making them ideal insulating materials for manufacturing high-voltage, high-current electronic components. The ceramic seal can seal and isolate the contact point between the high-voltage moving terminal 11 and the high-voltage stationary terminal 14 inside the ceramic seal, creating a vacuum environment and isolating it from the outside air, thus reducing the electric arc generated when the high-voltage moving terminal 11 and the high-voltage stationary terminal 14 come into contact.

[0059] The semiconductor cooler 20 can utilize the Peltier principle for cooling. That is, the semiconductor cooler 20 can use two different semiconductor materials to form an electrical circuit and pass a direct current through the electrical circuit. In addition to Joule heating, the electrical circuit releases other heat at one joint, while the other joint absorbs this heat. In this way, the semiconductor cooler 20 can absorb the heat from the seal 12, thereby dissipating heat for the core 10.

[0060] If the temperature of core 10 is higher than the preset temperature value, controller 90 can determine that the temperature of core 10 is too high and core 10 needs to dissipate heat. At this time, controller 90 can control semiconductor cooler 20 to cool it. If the circuit current of relay 100 is greater than the preset current value, controller 90 can determine that relay 100 is in a high-current operating state and core 10 needs to dissipate heat. At this time, controller 90 can control semiconductor cooler 20 to cool it, ensuring that relay 100 can dissipate heat in a timely manner.

[0061] This application also provides a control method, including: controlling the semiconductor cooler 20 to dissipate heat from the core 10 when the loop current of the relay 100 is greater than a preset current value or the temperature of the core 10 is higher than a preset temperature value.

[0062] The control method of this application embodiment can be implemented by the controller 90. Of course, in other embodiments, the control method can also be implemented by other devices or equipment, and is not limited to being implemented by the controller 90. The controller 90 may not be dedicated to implementing the control method of this application embodiment, but can implement other functions or methods.

[0063] Referring to Figure 4, this application also provides an electronic device 200, which includes a memory 210 and a processor 220. The memory 210 is configured to store a computer program, and the processor 220 implements the control method of this application when executing the computer program. Specifically, the processor 220 can control the semiconductor cooler 20 to dissipate heat from the core 10 when the circuit current of the relay 100 is greater than a preset current value or the temperature of the core 10 is higher than a preset temperature value.

[0064] In some embodiments, the thermoelectric cooler 20 includes a plurality of thermoelectric coolers 21, each thermoelectric cooler 21 including a cooling surface 211, which is thermally coupled to the seal 12.

[0065] The cooling surface 211 of the semiconductor cooling chip 21 can absorb heat. The thermal coupling between the cooling surface 211 and the seal 12 can absorb the heat of the seal 12 and transfer the heat of the seal 12 to achieve heat dissipation of the seal 12.

[0066] Specifically, referring to Figure 5, in the semiconductor cooling chip 21, the side that absorbs heat can be set as the cooling surface 211 of the semiconductor cooling chip 21. The cooling surface 211 can be set towards the side of the seal 12, or the cooling surface 211 can be attached to the side of the seal 12. The cooling surface 211 can absorb the heat of the seal 12 and realize heat dissipation on the inside of the seal 12.

[0067] Referring to Figure 6, in some embodiments, the thermoelectric cooler 20 includes a first parallel circuit 221, a second parallel circuit 222, a positive terminal 31, and a negative terminal 32. The thermoelectric cooler 21 also includes a heating surface 212, which is thermally coupled to the cooling surface 211. The controller 90 is electrically connected to the plurality of heating surfaces 212 through the positive terminal 31 and the first parallel circuit 221, and the controller 90 is also electrically connected to the plurality of heating surfaces 212 through the negative terminal 32 and the second parallel circuit 222.

[0068] The thermoelectric cooler 21 can also utilize the Peltier principle for cooling. That is, the thermoelectric cooler 21 can use two different semiconductor materials to form an electrical circuit, and a direct current can be passed through the electrical circuit to achieve heat dissipation inside the seal 12. The controller 90 can control the cooling of the thermoelectric cooler 21 by inputting a control current to the thermoelectric cooler 21.

[0069] Specifically, in the thermoelectric cooler 21, the side that releases heat can be designated as the heating surface 212 of the thermoelectric cooler 21. The heating surface 212 can be positioned away from the side of the seal 12. The cooling surface 211 can absorb heat from the seal 12 and transfer heat from the inside of the seal 12 to the heating surface 212, thereby achieving heat dissipation from the inside of the seal 12.

[0070] Referring to Figure 5, the thermoelectric cooler 20 may include a plurality of thermoelectric cooler chips 21, and the sealing member 12 may include a plurality of sides. The cooling surface 211 of each thermoelectric cooler chip 21 is arranged facing a corresponding side, so that each thermoelectric cooler chip 21 can dissipate heat to the inside of the sealing member 12.

[0071] Referring to Figure 1, the relay 100 includes a connection terminal 30. The controller 90 can provide input current to the thermoelectric cooler 21 through the connection terminal 30 and the corresponding parallel circuit structure to control the thermoelectric cooler 21 to cool.

[0072] Further, referring to FIG5, the connection terminal 30 may include a positive terminal 31 and a negative terminal 32. The controller 90 can be electrically connected to multiple heating surfaces 212 through the positive terminal 31 and the first parallel circuit 221, forming the positive terminals of multiple energized circuits. The heating surface 212 of each thermoelectric cooler 21 corresponds to the positive terminal of one energized circuit. The controller 90 can be electrically connected to multiple heating surfaces 212 through the negative terminal 32 and the first parallel circuit 221, forming the negative terminals of multiple energized circuits. The heating surface 212 of each thermoelectric cooler 21 corresponds to the negative terminal of one energized circuit.

[0073] Each thermoelectric cooler 21 may also include N-type and P-type semiconductors. The positive terminal of the energizing circuit on the heating surface 212 can be connected to the cooling surface 211 through the N-type semiconductor, and the cooling surface 211 is then connected to the negative terminal of the energizing circuit on the heating surface 212 through the P-type semiconductor. The controller 90 can apply direct current to the energizing circuit, causing the corresponding cooling surface 211 to absorb heat and the heating surface 212 to dissipate heat.

[0074] Among them, the N-type semiconductor material can be N-type doped bismuth telluride, and the P-type semiconductor material can be P-type doped bismuth telluride. Bismuth telluride has high thermoelectric properties, which can improve the cooling efficiency of the semiconductor cooler 21.

[0075] Referring to FIG1, in some embodiments, the relay 100 further includes thermally conductive adhesive 40 disposed between the cooling surface 211 and the seal 12.

[0076] The thermally conductive adhesive 40 can securely connect the cooling surface 211 and the seal 12, preventing the cooling surface 211 from falling off the seal 12. In addition, the thermally conductive adhesive 40 also has good thermal conductivity, improving the heat dissipation efficiency of the relay 100.

[0077] Specifically, the thermally conductive adhesive 40 can be made of thermally conductive silicone. While fixing the relative position of the cooling surface 211 and the seal 12, the thermally conductive silicone also has a heat-conducting effect, which helps to improve the heat dissipation efficiency of the relay 100.

[0078] Referring to Figure 1, the relay 100 also includes a coil assembly 50. Further, referring to Figure 5, the coil assembly 50 includes a coil 51 and potting compound 52. The coil 51 can be wound around an iron core 13. By energizing the coil 51, the iron core 13 generates a magnetic field, causing the high-voltage moving terminal to contact the high-voltage stationary terminal 14, thus closing the relay 100. After the coil 51 is de-energized, the magnetic field generated by the iron core 13 disappears, and the relay 100 opens. The space around the coil 51 can be reinforced with potting compound 52 to achieve heat dissipation and extend the service life of the coil assembly 50.

[0079] The relay 100 may also include an arc-extinguishing device. The arc-extinguishing device can suppress the electric arc generated when the relay 100 is disconnected, accelerate the extinction of the electric arc, and thus shorten the arc-extinguishing time of the relay 100.

[0080] Specifically, referring to Figure 1, the arc-extinguishing device may include an arc-extinguishing magnet 61 and an arc-extinguishing cover 62. The arc-extinguishing magnet 61 can generate a magnetic field to suppress the electric arc generated when the relay 100 is disconnected, thereby accelerating the extinction of the electric arc. The arc-extinguishing cover 62 allows the electric arc to come into contact with a solid medium, reducing the arc temperature and accelerating the extinction of the arc.

[0081] Referring to Figure 1, the relay 100 also includes an upper housing 71 and a lower housing 72. The core 10, the thermoelectric cooler 20, the thermally conductive adhesive 40, and the arc-extinguishing device can be disposed inside the upper housing 71, and the coil assembly 50 can be disposed inside the lower housing 72. The inner side of the upper housing 71 can be configured as the high-voltage system of the relay 100, and the inner side of the lower housing 72 can be configured as the low-voltage system of the relay 100. The isolation between the upper housing 71 and the lower housing 72 can achieve isolation between the low-voltage system and the high-voltage system of the relay 100.

[0082] Referring to Figure 8, the relay 100 may include a sensor assembly 80, which may be located near the high-voltage stationary terminal 14 or at other locations on the relay 100. The controller 90 may control the cooling of the thermoelectric cooler 21 based on the detection value of the sensor assembly 80.

[0083] In some embodiments, the sensor assembly 80 may include a temperature sensor 80 configured to detect the temperature of the high-voltage stationary terminal 14 to obtain the temperature of the core 10.

[0084] The controller 90 can obtain the detection value of the temperature sensor 80 to determine the temperature of the core 10, and control the semiconductor cooler 20 to dissipate heat from the core 10 when the temperature of the core 10 is higher than the preset temperature value.

[0085] Specifically, the preset temperature value can be determined based on the location of the temperature sensor 80. If the temperature sensor 80 is located near the high-voltage stationary terminal 14, the preset temperature value can be set relatively high because the heat generated near the high-voltage stationary terminal 14 is relatively large. If the temperature sensor 80 is located outside the upper housing 71 or lower housing 72 of the relay 100, the preset temperature value can be set relatively low.

[0086] For example, the sensor assembly 80 may include a temperature sensor 80, which may include temperature sensor NTC1 and temperature sensor NTC2. Temperature sensor NTC1 is located near the high-voltage stationary terminal 14, and the preset temperature value corresponding to temperature sensor NTC1 can be set to approximately 150 degrees Celsius. Temperature sensor NTC2 is located outside the upper housing 71 or lower housing 72 of the relay 100, and the preset temperature value corresponding to temperature sensor NTC2 can be set to approximately 125 degrees Celsius.

[0087] In some implementations, sensor assembly 80 may include current sensor 80, which is configured to detect loop current.

[0088] The controller 90 can determine the loop current based on the detection value of the current sensor 80, and control the semiconductor cooler 20 to dissipate heat from the core 10 when the loop current of the relay 100 is greater than the preset current value.

[0089] Specifically, the current sensor 80 can be installed between the high-voltage stationary terminals 14 or on the line of the external connection terminal 15. The preset current value can be set according to the rated current of the relay 100, or it can be set according to the maximum current allowed to flow through the relay 100.

[0090] In some embodiments, the control method includes controlling the operating current of the semiconductor cooler 20 according to relevant control parameters to control the semiconductor cooler 20 to dissipate heat from the core 10. The relevant control parameters include proportional coefficient, integral coefficient, derivative coefficient, and the temperature value or loop current value of the core 10.

[0091] The controller 90 can control the operating current of the semiconductor cooler 20 based on the proportional-integral-derivative (PID) algorithm, thereby controlling the power of the semiconductor cooler 20 to dissipate heat from the core 10.

[0092] Specifically, referring to Figure 9, Qc can be set to the operating power of the cooling surface 211, Qh can be set to the operating power of the heating surface 212, I can be set to the operating current of the semiconductor cooler 20, and ΔT can be set to the temperature difference between the heating surface 212 and the cooling surface 211.

[0093] According to Figure 9, the higher the operating current of the thermoelectric cooler 20, the greater the power of the cooling surface 211 and the heating surface 212, meaning the greater the power of the thermoelectric cooler 20 in dissipating heat from the core 10. According to Figure 7, the greater the temperature difference between the heating surface 212 and the cooling surface 211, the greater the power of the thermoelectric cooler 20 in dissipating heat from the core 10. In other words, with the heating surface 212 temperature remaining constant, the higher the temperature of the cooling surface 211, the greater the power of the thermoelectric cooler 20 in dissipating heat from the core 10.

[0094] Q ab The operating power of the semiconductor cooler 20, Q, can be set. ab =π ab u = ay.

[0095] Where, π ab denoted by Peltier coefficient, and α by thermoelectric potential. u can be set to the operating current of the thermoelectric cooler 20, and y can be set to the temperature of the cooling surface 211.

[0096] Since the cooling surface 211 is set towards the core 10, the temperature of the core 10 can be set to be the same as the temperature of the cooling surface 211. The controller 90 can use a PID control algorithm to set the operating current value of the semiconductor cooler 20 to control the operating power of the semiconductor cooler 20, thereby controlling the temperature of the cooling surface 211 to achieve heat dissipation for the core 10.

[0097] Referring to Figure 10, r(n) can be set to the ideal temperature value of the core 10, and y(n) can be set to the actual temperature value of the core 10. The proportional coefficient, integral coefficient, and derivative coefficient can be set as the control parameters of the PID controller, and u(n) can be set as the control signal for the controlled object, which is the operating current of the semiconductor cooler 20.

[0098] r(n) can also be set to the ideal loop current value, and y(n) can be set to the actual loop current value. The proportional coefficient, integral coefficient, and derivative coefficient can be set as the control parameters of the PID controller, and the controlled object is the operating current of the semiconductor cooler 20.

[0099] Referring to FIG10, in some embodiments, the temperature value of the core 10 includes a temperature sampling value and / or a temperature change value, and the loop current value includes a current sampling value and / or a current change value.

[0100] The controller 90 can control the operating current of the thermoelectric cooler 20 based on the temperature sampling value or temperature change value. The controller 90 can also control the operating current of the thermoelectric cooler 20 based on the current sampling value or current change value.

[0101] Specifically, y(n) can be set to the previous temperature sampling value, and r(n) can be set to the current temperature sampling value. The controller 90 can control the operating current of the thermoelectric cooler 20 based on the temperature change e(n) between the two temperature sampling values. Alternatively, y(n) can be set to the previous current sampling value, and r(n) can also be set to the current sampling value. The controller 90 can control the operating current of the thermoelectric cooler 20 based on the current change e(n) between the two current sampling values. At this point, the following exists:

[0102] K p-n K i-n and K d-n The proportional coefficient, integral coefficient, and differential coefficient can be set separately as determined by the nth sampling.

[0103] Of course, y(n) can also be set to zero, in which case e(n) = r(n), and the controller 90 can control the operating current of the semiconductor cooler 20 according to the current sampling value or the current change value.

[0104] In some implementations, when the current sample value is higher than or equal to a preset current threshold, the operating current of the semiconductor cooler 20 is controlled according to the current sample value, proportional coefficient, integral coefficient, and derivative coefficient until the current sample value is lower than the preset current threshold.

[0105] The controller 90 can control the operating current of the semiconductor cooler 20 based on the PID algorithm, so that the loop current of the relay 100 is lower than the preset current threshold, thus preventing the relay 100 from operating at high current.

[0106] Specifically, referring to Figure 11, K p-0 K i-0 K d-0 The initial values ​​for the proportional coefficient, integral coefficient, and derivative coefficient can be set separately, I. upper limit-0 It can be a preset current threshold, and the current sampling value can be set to I. sampling K p-0 K i-0 K d-0 It can be determined based on overcurrent simulation, control simulation, and experimental data under different operating conditions of relay 100. During the simulation experiment, if the proportional coefficient, integral coefficient, and derivative coefficient are respectively K... p-0 K i-0 K d-0 PID controllers have good control performance.

[0107] Controller 90 can acquire current sampling values ​​according to a specific sampling period, and when the current sampling value is higher than or equal to I... upper limit-0 In this case, the PID controller can be based on K p-0 K i-0 K d-0 The operating current of the control semiconductor cooler 20 is used to dissipate heat from the relay 100 until the current sampling value is lower than I. upper limit-0 .

[0108] Referring to Figure 11, in some embodiments, the preset current threshold, proportional coefficient, integral coefficient, and derivative coefficient are determined based on the start-up time of the semiconductor cooler 20, the ambient temperature outside the relay 100, the current sampling value, and the current change value.

[0109] After the semiconductor cooler 20 completes one operation, the proportional coefficient, integral coefficient, derivative coefficient and preset current threshold can be updated in real time by combining machine learning algorithms, so that the control strategy of the controller 90 is continuously optimized.

[0110] Specifically, when the thermoelectric cooler 20 is turned on, the controller 90 can start a timer, and stop the timer after the thermoelectric cooler 20 has completed one operation. After the thermoelectric cooler 20 has completed one operation, the controller 90 can also obtain the ambient temperature and current sampling values ​​outside the relay 100. The thermoelectric cooler 20 can be turned on multiple times, and after each operation, the start time, ambient temperature, and current sampling values ​​of the thermoelectric cooler 20 will be updated in real time.

[0111] The controller 90 can input the start-up time of the semiconductor cooler 20, the ambient temperature, and the current sampling value to the adaptive system. The adaptive system can output updated preset current threshold, proportional coefficient, integral coefficient, and derivative coefficient as control parameters for the next control based on machine learning algorithms such as BP neural network, grey prediction, adaptive Kalman filter algorithm, and robust optimization algorithm.

[0112] When the semiconductor cooler 20 is turned on for the first time, the preset current threshold can be set to I. upper limit-0 The proportional coefficient, integral coefficient, and differential coefficient can each be set to K. p-0 K i-0 K d-0 I upper limit-0 K p-0 K i-0 K d-0 All of these can be the initial settings.

[0113] When the semiconductor cooler 20 is turned on for the (n+1)th time, the preset current threshold can be set to I.upper limit-n The proportional coefficient, integral coefficient, and differential coefficient can each be set to K. p-n K i-n K d-n After the thermoelectric cooler 20 completes its nth operation, the controller 90 can input the start-up time, ambient temperature, and current sample value of the thermoelectric cooler 20 to the adaptive system, and the adaptive system outputs I. upper limit-0 K p-0 K i-0 and K d-0 These are the control parameters for the (n+1)th time the semiconductor cooler 20 is turned on.

[0114] Furthermore, the current sampling value after each operation of the semiconductor cooler 20 can be set to I. sampling The current sampling value before the semiconductor cooler 20 is turned on can be set to I. sampling 0, thus it can be determined that the current change value of the semiconductor cooler 20 during this turn-on is I. sampling -I sampling 0. The current change value is updated in real time after each operation of the semiconductor cooler 20.

[0115] After the thermoelectric cooler 20 completes its nth operation, the controller 90 can also input the start-up time of the thermoelectric cooler 20, the ambient temperature, and the current change value to the adaptive system. The adaptive system outputs I. upper limit-0 K p-0 K i-0 and K d-0 These are the control parameters for the (n+1)th time the semiconductor cooler 20 is turned on.

[0116] Referring to FIG12, in some embodiments, when the temperature sample value is higher than or equal to a preset temperature threshold, the operating current of the semiconductor cooler 20 is controlled according to the temperature sample value, the proportional coefficient, the integral coefficient and the derivative coefficient until the temperature sample value is lower than the preset temperature threshold.

[0117] The controller 90 can control the operating current of the semiconductor cooler 20 based on the PID algorithm, so that the temperature of the core 10 is lower than the preset temperature threshold, thereby reducing the operating temperature of the relay 100.

[0118] Referring to Figure 13, in some embodiments, the preset temperature threshold, proportional coefficient, integral coefficient, and differential coefficient are determined based on the start-up time of the semiconductor cooler 20, the ambient temperature outside the relay 100, the temperature sampling value, and the temperature change value.

[0119] After the semiconductor cooler 20 completes one operation, the proportional coefficient, integral coefficient, derivative coefficient and preset temperature threshold can be updated in real time by combining machine learning algorithms, so that the control strategy of the controller 90 is continuously optimized.

[0120] Specifically, the principle of controller 90 in reducing the temperature of core 10 based on PID algorithm is the same as the principle of reducing loop current, and can be referred to the above implementation method.

[0121] In some implementations, the control semiconductor cooler 20 stops operating when the relay 100 is disconnected.

[0122] When relay 100 is disconnected, relay 100 will not generate a lot of heat, and the thermoelectric cooler 20 can stop working to save the energy consumed by the thermoelectric cooler 20.

[0123] Specifically, referring to Figure 11, the controller 90 can be configured as a battery management system (BMS), and the relay 100 can be configured as a switching device in the battery system. When the BMS does not provide a power-on command to the relay 100, the relay 100 is in the open state, the controller 90 stops detecting the loop current, and the semiconductor cooler 20 will not be turned on.

[0124] Referring to Figure 12, if the BMS does not provide a power-on command to the relay 100, the relay 100 is in the off state, the controller 90 stops detecting the temperature of the core 10, and the semiconductor cooler 20 will not be turned on.

[0125] Referring to FIG13, an embodiment of this application provides a power system 1000, which includes the relay 100 or electronic device 200 of the above embodiment.

[0126] Specifically, the power system 1000 can be used in devices such as vehicles and computers. The power system 1000 may include a relay 100, and the controller 90 within the relay 100 can execute the control method described in the above embodiments. The power system 1000 may also include an electronic device 200, which may be the main control unit of the power system 1000, and the electronic device 200 can execute the control method described in the above embodiments.

[0127] Referring to FIG14, this application embodiment also provides a computer-readable storage medium 2000, which stores a computer program that, when executed by one or more processors, implements the above-described control method.

[0128] In the description of this specification, the terms "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with an embodiment or example that are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, without contradiction, those skilled in the art can combine and integrate different embodiments or examples described in this specification, as well as features of different embodiments or examples.

[0129] Furthermore, the term "connection" should be interpreted broadly. For example, it can include fixed connections, detachable connections, or integral connections; it can include direct connections or indirect connections through an intermediate medium; and it can also include internal communication between two elements. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0130] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0131] Any process or method description in the flowchart or otherwise herein can be understood as representing a module, segment, or portion of code comprising one or more executable instructions for implementing a particular logical function or process, and the scope of the preferred embodiments of this application includes additional implementations in which functions may be performed not in the order shown or discussed, including substantially simultaneously or in reverse order according to the functions involved, as should be understood by those skilled in the art to which embodiments of this application pertain.

[0132] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.

Claims

1. A relay (100), wherein, The relay (100) comprises: a core (10) comprising a high-voltage moving terminal (11) and a seal (12) sealing the high-voltage moving terminal (11); a semiconductor refrigerator (20) thermally coupled with the seal (12); a controller (90) configured to control the semiconductor refrigerator (20) to dissipate heat for the core (10) in a case where a loop current of the relay (100) is greater than a preset current value or a temperature of the core (10) is higher than a preset temperature value.

2. The relay (100) according to claim 1, wherein The semiconductor refrigerator (20) comprises a plurality of semiconductor refrigerating sheets (21) comprising refrigerating surfaces (211) thermally coupled with the seal (12).

3. The relay (100) according to claim 2, wherein The relay (100) comprises a connection terminal positive electrode (31) and a connection terminal negative electrode (32), and the semiconductor refrigerator (20) comprises a first parallel circuit (221), a second parallel circuit (222), and heating surfaces (212) thermally coupled with the refrigerating surfaces (211); The controller (90) is electrically connected with the plurality of heating surfaces (212) through the connection terminal positive electrode (31) and the first parallel circuit (221), and is electrically connected with the plurality of heating surfaces (212) through the connection terminal negative electrode (32) and the second parallel circuit (222).

4. The relay (100) according to claim 2 or 3, wherein The relay (100) further comprises a heat-conducting adhesive (40) arranged between the refrigerating surfaces (211) and the seal (12).

5. The relay (100) according to any one of claims 1-4, wherein, The relay (100) comprises a high-voltage static terminal (14), and the high-voltage moving terminal (11) is configured to be connected to the high-voltage static terminal (14); and a temperature sensor (81) configured to detect a temperature of the high-voltage static terminal (14) to obtain the temperature of the core (10).

6. The relay (100) according to any one of claims 1-5, wherein The relay (100) comprises a current sensor (82) configured to detect the loop current.

7. A control method of a relay (100), wherein The relay (100) comprises a core (10) comprising a high-voltage moving terminal (11) and a seal (12) sealing the high-voltage moving terminal (11), and a semiconductor refrigerator (20) thermally coupled with the seal (12), and the method comprises: controlling the semiconductor refrigerator (20) to dissipate heat for the core (10) in a case where a loop current of the relay (100) is greater than a preset current value or a temperature of the core (10) is higher than a preset temperature value.

8. The control method according to claim 7, wherein The relay (100) comprises a high-voltage static terminal (14), and the method comprises: controlling a working current of the semiconductor refrigerator (20) according to a related control parameter to control the semiconductor refrigerator (20) to dissipate heat for the core (10), wherein the related control parameter comprises a proportional coefficient, an integral coefficient, a differential coefficient, and a temperature value of the core (10) or a loop current value.

9. The control method according to claim 8, wherein The temperature value of the core (10) includes a temperature sampling value and / or a temperature change value, and the loop current value includes a current sampling value and / or a current change value.

10. The control method according to claim 9, wherein In a case where the current sampling value is higher than or equal to a preset current threshold value, the working current of the semiconductor refrigerator (20) is controlled according to the current sampling value, the proportional coefficient, the integral coefficient and the differential coefficient until the current sampling value is lower than the preset current threshold value.

11. The control method according to claim 10, wherein The proportional coefficient, the integral coefficient, the differential coefficient and the preset current threshold value are determined according to the time when the semiconductor refrigerator (20) starts working, the ambient temperature outside the relay (100), the current sampling value and the current change value.

12. The control method according to any one of claims 9-11, wherein, In a case where the temperature sampling value is higher than or equal to a preset temperature threshold value, the working current of the semiconductor refrigerator (20) is controlled according to the temperature sampling value, the proportional coefficient, the integral coefficient and the differential coefficient until the temperature sampling value is lower than the preset temperature threshold value.

13. The control method according to claim 12, wherein The proportional coefficient, the integral coefficient, the differential coefficient and the preset temperature threshold value are determined according to the time when the semiconductor refrigerator (20) starts working, the ambient temperature outside the relay (100), the temperature sampling value and the temperature change value.

14. The control method according to any one of claims 7-13, wherein, In a case where the relay (100) is disconnected, the semiconductor refrigerator (20) is controlled to stop working.

15. An electronic device (200), wherein The electronic device (200) includes a memory (210) configured to store a computer program and a processor (220) which, when executing the computer program, implements the control method of any one of claims 7-14.

16. A power system (1000), wherein The power system (1000) includes the relay (100) of any one of claims 1-6 or the electronic device (200) of claim 15.

17. A computer readable storage medium (200), wherein, The computer readable storage medium stores a computer program which, when executed by one or more processors, implements the control method of any one of claims 7-14. The computer readable storage medium stores a computer program which, when executed by one or more processors, implements the control method of any one of claims 7-14.

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