Semiconductor device and semiconductor module

Abstract

This semiconductor device includes: a semiconductor element; a first wire connected to the semiconductor element; a second wire connected to the semiconductor element and electrically conductive with the first wire; a first terminal to which the first wire is electrically connected; and a second terminal to which the second wire is electrically connected. The first wire contains a first metal as a main component. The second wire contains, as a main component, a second metal having a different thermoelectric power from the first metal. The first terminal includes a portion including the first metal, and the second terminal includes a portion including the second metal.

Description

Semiconductor device and semiconductor module

[0001] The present disclosure relates to a semiconductor device and a semiconductor module.

[0002] Some semiconductor devices are provided with a temperature sensor for detecting the temperature of a semiconductor element. Patent Document 1 discloses a semiconductor device in which a temperature detection element is disposed so as to contact an insulating layer near the semiconductor element. However, in this case, the temperature is detected based on heat transmitted through the mounting layer on which the semiconductor element is mounted and the insulating layer, which reduces the accuracy of the detected temperature of the semiconductor element.

[0003] Japanese Patent Application Laid-Open No. 2021-86933

[0004] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that can improve the accuracy of the temperature of a semiconductor element to be detected.

[0005] A semiconductor device provided by a first aspect of the present disclosure includes a semiconductor element, a first wire mainly composed of a first metal and connected to the semiconductor element, a second wire mainly composed of a second metal having a thermoelectric power different from that of the first metal, connected to the semiconductor element and conducting with the first wire, a first terminal electrically connected to the first wire, and a second terminal electrically connected to the second wire, wherein the first terminal has a portion including the first metal and the second terminal has a portion including the second metal.

[0006] A semiconductor module provided by a second aspect of the present disclosure includes the semiconductor device according to the first aspect of the present disclosure, a wiring board disposed on one side of the support substrate in the thickness direction, and a thermistor mounted on the wiring board. The wiring board has a plurality of through holes penetrating the wiring board in the thickness direction. The first metal pin and the second metal pin are inserted into any of the plurality of through holes. The thermistor is disposed adjacent to at least one of the first metal pin and the second metal pin.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 3 is a view showing the sealing resin in the plan view of FIG. 2 with imaginary lines. FIG. 4 is a view showing the sealing resin and the second conductive member in the plan view of FIG. 3 , with the sealing resin and the second conductive member omitted. FIG. 5 is a view showing the plan view of FIG. 4 , with the first conductive member omitted. FIG. 6 is a partially enlarged plan view showing a portion of FIG. 5 . FIG. 7 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3 . FIG. 9 is a partially enlarged cross-sectional view showing a portion of FIG. 8 (near the first semiconductor element). FIG. 10 is a partially enlarged cross-sectional view showing a portion of FIG. 8 (near the second semiconductor element). FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3 . FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 3 . FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 3 . 14 is a cross-sectional view taken along line XIV-XIV in FIG. 3. FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. 3. FIG. 16 is a partially enlarged cross-sectional view of FIG. 11. FIG. 17 is a partially enlarged plan view of FIG. 6. FIG. 18 is a partially enlarged plan view of FIG. 6. FIG. 19 is a partially enlarged plan view similar to FIG. 6, showing a semiconductor device according to a first modified example of the first embodiment. FIG. 20 is a partially enlarged plan view of FIG. 19. FIG. 21 is a partially enlarged plan view of FIG. 19. FIG. 22 is a partially enlarged plan view similar to FIG. 6, showing a semiconductor device according to a second modified example of the first embodiment. FIG. 23 is a partially enlarged plan view of FIG. 22. FIG. 24 is a partially enlarged plan view of FIG. 22. FIG. 25 is a partially enlarged plan view similar to FIG. 6, showing a semiconductor device according to a third modified example of the first embodiment. FIG. 26 is a partially enlarged cross-sectional view taken along line XXVI-XXVI in FIG. 25. Fig. 27 is a plan view similar to Fig. 5, showing a semiconductor device according to a fourth modified example of the first embodiment. Fig. 28 is a partially enlarged plan view showing a portion of Fig. 27 in an enlarged scale. Fig. 29 is a cross-sectional view taken along line XXIX-XXIX in Fig. 27. Fig. 30 is a partially enlarged plan view showing a portion of Fig. 28 in an enlarged scale. Fig. 31 is a partially enlarged plan view showing a portion of Fig. 28 in an enlarged scale. Fig. 32 is a partially enlarged cross-sectional view showing a portion of Fig. 29 in an enlarged scale.Fig. 33 is a perspective view showing an example of a semiconductor module including the semiconductor device according to the first embodiment of the present disclosure. Fig. 34 is a plan view showing an example of a semiconductor module including the semiconductor device according to the first embodiment of the present disclosure. Fig. 35 is a cross-sectional view taken along line XXXV-XXXV in Fig. 34.

[0009] DETAILED DESCRIPTION Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0011] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0012] 1 to 18 show a semiconductor device according to a first embodiment of the present disclosure. A semiconductor device A1 of this embodiment includes a support substrate 11, a plurality of power terminals 13, a plurality of semiconductor elements 21, a conductive bonding layer 23, a first conductive member 31, a second conductive member 32, a plurality of wires, a plurality of signal terminals 45, a terminal support 48, and a sealing resin 50. The plurality of power terminals 13 include a first power terminal 14, two second power terminals 15, and two third power terminals 16. The plurality of wires include a plurality of wires 40, a plurality of wires 41, a plurality of wires 42, a first wire 43, and a second wire 44.

[0013] FIG. 1 is a perspective view showing the semiconductor device A1. FIG. 2 is a plan view showing the semiconductor device A1. FIG. 3 is a plan view showing the semiconductor device A1, in which the sealing resin 50 is indicated by an imaginary line (two-dot chain line). FIG. 4 is a plan view showing the semiconductor device A1, in which the sealing resin 50 and the second conductive member 32 are omitted from the plan view of FIG. 3. FIG. 5 is a plan view showing the first conductive member 31 omitted from the plan view of FIG. 4. FIG. 6 is a partially enlarged plan view of a portion of FIG. 5. FIG. 7 is a bottom view showing the semiconductor device A1. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIGS. 9 and 10 are partially enlarged cross-sectional views of a portion of FIG. 8. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 3. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 3. Fig. 14 is a cross-sectional view taken along line XIV-XIV in Fig. 3. Fig. 15 is a cross-sectional view taken along line XV-XV in Fig. 3. Fig. 16 is a partially enlarged cross-sectional view of a portion of Fig. 11. Figs. 17 and 18 are partially enlarged plan views of a portion of Fig. 6.

[0014] In these figures, the thickness direction of the present disclosure is referred to as the "thickness direction z." Furthermore, "plan view" refers to the view in the thickness direction z. The direction perpendicular to the thickness direction z is referred to as the "first direction x." The direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y." One side of the thickness direction z corresponds to the "one side of the thickness direction" of the present disclosure and is referred to as the "z1 side of the thickness direction z." The other side of the thickness direction z corresponds to the "other side of the thickness direction" of the present disclosure and is referred to as the "z2 side of the thickness direction z." One side of the first direction x is referred to as the "x1 side of the first direction x," and the other side of the first direction x is referred to as the "x2 side of the first direction x." One side of the second direction y is referred to as the "y1 side of the second direction y," and the other side of the second direction y is referred to as the "y2 side of the second direction y." Furthermore, the z1 side of the thickness direction z is sometimes referred to as the upper side, and the z2 side of the thickness direction z is sometimes referred to as the lower side. Note that terms such as "top," "bottom," "upper," "lower," "top surface," and "bottom surface" indicate the relative positional relationship of each part in the thickness direction z, and are not necessarily terms that define the relationship with the direction of gravity.

[0015] The semiconductor device A1 converts a DC power supply voltage applied to the first power terminal 14 and two second power terminals 15 into AC power using a plurality of semiconductor elements 21. The converted AC power is input from two third power terminals 16 to a power supply target such as a motor.

[0016] As shown in Figures 5, 7 to 9, 11, 13, and 14, the support substrate 11 supports a plurality of semiconductor elements 21 in the thickness direction z. The support substrate 11 is formed, for example, from a DBC (Direct Bonded Copper) substrate. As shown in Figures 4 to 16, the support substrate 11 includes an insulating layer 111, support conductors 112, and a back surface metal layer 113. As shown in Figures 7 to 16, the support substrate 11 is covered with a sealing resin 50 except for a portion of the back surface metal layer 113.

[0017] 8 to 16, the insulating layer 111 includes a portion interposed between the support conductor 112 and the back surface metal layer 113 in the thickness direction z. The insulating layer 111 is made of a material with relatively high thermal conductivity. The insulating layer 111 is made of ceramics including aluminum nitride (AlN) or silicon nitride (SiN4), for example. The insulating layer 111 may be made of an insulating resin sheet instead of ceramics.

[0018] As shown in FIGS. 4, 5, and 8 to 16, the support conductor 112 is located above (on the z1 side of) the insulating layer 111 in the thickness direction z. The composition of the support conductor 112 includes Cu (copper). As shown in FIGS. 8 and 14, the support conductor 112 is surrounded by the periphery of the insulating layer 111 in a plan view. As shown in FIGS. 8 to 15, the support conductor 112 has a support surface 1120. The support surface 1120 is a flat surface facing the z1 side in the thickness direction z. As shown in FIGS. 4, 5, and 8 to 15, the support conductor 112 includes a first conductive portion 1121 and a second conductive portion 1122. The first conductive portion 1121 and the second conductive portion 1122 are each rectangular in a plan view. The first conductive portion 1121 and the second conductive portion 1122 are spaced apart from each other in the first direction x. The first conductive portion 1121 is located on the x1 side in the first direction x with respect to the second conductive portion 1122. Each of the plurality of semiconductor elements 21 is bonded to either the first conductive portion 1121 or the second conductive portion 1122.

[0019] As shown in FIGS. 8 to 16 , the back surface metal layer 113 is located below (on the z2 side of) the insulating layer 111 in the thickness direction z. The back surface metal layer 113 has a bottom surface 1130. The bottom surface 1130 is a flat surface facing the z2 side in the thickness direction z. As shown in FIG. 7 , the bottom surface 1130 is exposed from the sealing resin 50. A heat dissipation member (e.g., a heat sink) (not shown) can be attached to the bottom surface 1130 of the back surface metal layer 113. The composition of the back surface metal layer 113 includes copper. The back surface metal layer 113 is rectangular in plan view. The back surface metal layer 113 is surrounded by the periphery of the insulating layer 111 in plan view.

[0020] The multiple semiconductor elements 21 are elements that perform the electrical functions of the semiconductor device A1. As shown in FIGS. 5, 6, and 8 to 11, each of the multiple semiconductor elements 21 is mounted on either the first conductive portion 1121 or the second conductive portion 1122. Each semiconductor element 21 is configured using a semiconductor material primarily made of, for example, SiC (silicon carbide). Note that the semiconductor material is not limited to SiC and may be Si (silicon), GaAs (gallium arsenide), GaN (gallium nitride), or the like. Each semiconductor element 21 is, for example, a switching element such as a metal-oxide-semiconductor field-effect transistor (MOSFET). Note that each semiconductor element 21 is not limited to a MOSFET and may be a field-effect transistor including a metal-insulator-semiconductor field-effect transistor (MISFET) or a bipolar transistor such as an insulated gate bipolar transistor (IGBT). Each of the multiple semiconductor elements 21 is, for example, an n-channel MOSFET, and all of the multiple semiconductor elements 21 are the same element. Each semiconductor element 21 may be a p-channel MOSFET.

[0021] As shown in Figures 5, 6 and 8 to 11, in the semiconductor device A1, the multiple semiconductor elements 21 include multiple first elements 21A and multiple second elements 21B. The structure of each of the multiple second elements 21B is the same as the structure of each of the multiple first elements 21A. The multiple first elements 21A are mounted on a first conductive portion 1121. The multiple first elements 21A are arranged along the second direction y. The multiple second elements 21B are mounted on a second conductive portion 1122. The multiple second elements 21B are arranged along the second direction y.

[0022] 9 and 10 , each of the multiple semiconductor elements 21 has an element main surface 2101 and an element back surface 2102. In each semiconductor element 21, the element main surface 2101 and the element back surface 2102 are spaced apart in the thickness direction z. The element main surface 2101 faces the z1 side in the thickness direction z, and the element back surface 2102 faces the z2 side in the thickness direction z.

[0023] 5, 6, 9, and 10, each of the semiconductor elements 21 has a first electrode 212, a second electrode 211, a third electrode 213, and two fourth electrodes 214. The first electrode 212, the third electrode 213, and the two fourth electrodes 214 are arranged on the element main surface 2101. The second electrode 211 is arranged on the element rear surface 2102.

[0024] 9 and 10 , the second electrode 211 faces either the first conductive portion 1121 or the second conductive portion 1122. A current corresponding to the power before being converted by the semiconductor element 21 flows through the second electrode 211. In other words, the second electrode 211 corresponds to the drain electrode of the semiconductor element 21.

[0025] 5 , 6 , 9 , and 10 , the first electrode 212 is located on the opposite side of the second electrode 211 in the thickness direction z. A current corresponding to the power converted by the semiconductor element 21 flows through the first electrode 212. In other words, the first electrode 212 corresponds to the source electrode of the semiconductor element 21.

[0026] 5 and 6 , the third electrode 213 is located on the same side as the first electrode 212 in the thickness direction z. A gate voltage for driving the semiconductor element 21 is applied to the third electrode 213. In other words, the third electrode 213 corresponds to the gate electrode of the semiconductor element 21. In a plan view, the area of ​​the third electrode 213 is smaller than the area of ​​the first electrode 212.

[0027] As shown in FIGS. 5 , 6 , 9 , and 10 , the two fourth electrodes 214 are located on the same side as the first electrode 212 in the thickness direction z and adjacent to the third electrode 213 in the second direction y. In the illustrated example, the two fourth electrodes 214 are located on both sides of the third electrode 213 in the second direction y, sandwiching the third electrode 213 therebetween. The potential of each fourth electrode 214 is equal to the potential of the first electrode 212. The fourth electrode 214 corresponds to a source sense electrode. Unlike the illustrated example, each semiconductor element 21 may include only one of the two fourth electrodes 214, or may not include either of the two fourth electrodes 214. The constituent materials of the first electrode 212, the second electrode 211, the third electrode 213, and the fourth electrode 214 are not particularly limited and may include Al (aluminum) or Cu (copper). In this embodiment, the constituent material of each of the first electrode 212, the second electrode 211, the third electrode 213, and the fourth electrode 214 is Cu.

[0028] As shown in FIGS. 9 and 10 , the conductive bonding layer 23 is interposed between one of the first conductive portions 1121 and 1122 and the second electrode 211 of one of the plurality of semiconductor elements 21. The conductive bonding layer 23 is, for example, solder. Alternatively, the conductive bonding layer 23 may include a sintered body of metal particles (sintered metal). The second electrodes 211 of the plurality of first elements 21A are conductively bonded to the first conductive portion 1121 via the conductive bonding layer 23. As a result, the second electrodes 211 of the plurality of first elements 21A are electrically connected to the first conductive portion 1121. The second electrodes 211 of the plurality of second elements 21B are conductively bonded to the second conductive portion 1122 via the conductive bonding layer 23. As a result, the second electrodes 211 of the plurality of second elements 21B are electrically connected to the second conductive portion 1122. Unlike the present embodiment, the plurality of first elements 21A and the plurality of second elements 21B may be mounted on a metal member that is different from a part of the DBC substrate, etc. This metal member may be supported by, for example, the DBC substrate, etc.

[0029] The plurality of power terminals 13 are electrically connected to the plurality of semiconductor elements 21, respectively. A current corresponding to the power before being converted by the plurality of semiconductor elements 21 or a current corresponding to the power after being converted by the plurality of semiconductor elements 21 flows through the plurality of power terminals 13. The plurality of power terminals 13 include a first power terminal 14, two second power terminals 15, and two third power terminals 16.

[0030] As shown in FIGS. 4 and 11 , the first power terminal 14 is joined to the first conductive portion 1121. This joining method is not limited to any particular method and may be performed using a conductive bonding material (e.g., solder), laser welding, or crimping. The first power terminal 14 is electrically connected to the second electrodes 211 of the plurality of first elements 21A via the first conductive portion 1121. The first power terminal 14 is a P terminal (positive electrode) to which a DC power supply voltage to be converted into power is applied. As shown in FIG. 4 , the first power terminal 14 is located on the opposite side of the second conductive portion 1122 in the first direction x, with the first conductive portion 1121 sandwiched therebetween. The first power terminal 14 extends from the first conductive portion 1121 toward the x1 side in the first direction x and protrudes from the sealing resin 50 toward the x1 side in the first direction x. As shown in FIG. 3 , the first power terminal 14 includes a portion covered by the sealing resin 50 and a portion exposed from the sealing resin 40. In the first power terminal 14, the portion covered with the sealing resin 50 is joined to the first conductive portion 1121. In addition, in the first power terminal 14, the portion exposed from the sealing resin 50 is used as the aforementioned P terminal of the semiconductor device A1.

[0031] A second conductive member 32 is joined to the two second power terminals 15. The two second power terminals 15 are electrically connected to the first electrodes 212 of the multiple second elements 21B via the second conductive member 32. The two second power terminals 15 are N terminals (negative electrodes) to which a DC power supply voltage to be converted is applied. The two second power terminals 15 are spaced apart from each other in the second direction y. The first power terminal 14 is located between the two second power terminals 15. As shown in FIG. 4 , the two second power terminals 15 are located on the same side as the first power terminal 14 with respect to the first conductive portion 1121 and the second conductive portion 1122 in the first direction x. The two second power terminals 15 are spaced apart from the first conductive portion 1121 and the second conductive portion 1122. Each of the two second power terminals 15 extends in the first direction x and protrudes from the sealing resin 50 toward the x1 side in the first direction x. As shown in Fig. 3, each of the two second power terminals 15 includes a portion covered with the sealing resin 50 and a portion exposed from the sealing resin 50. In each of the second power terminals 15, the second conductive member 32 is joined to the portion covered with the sealing resin 50. In addition, in each of the second power terminals 15, the portion exposed from the sealing resin 50 is used as the aforementioned N terminal of the semiconductor device A1.

[0032] As shown in FIGS. 4 and 8 , the two third power terminals 16 are each joined to the second conductive portion 1122. This joining is not limited to any particular method and may be performed using a conductive joining material (e.g., solder) (not shown), laser welding, or crimping. Each of the two third power terminals 16 is electrically connected to the second electrodes 211 of the plurality of second elements 21B via the second conductive portion 1122. Each of the two third power terminals 16 is also electrically connected to the first electrodes 212 of the plurality of first elements 21A via the second conductive portion 1122 and the first conductive member 31. AC power converted by the plurality of semiconductor elements 21 (the plurality of first elements 21A and the plurality of second elements 21B) is output from the two third power terminals 16. In other words, each of the two third power terminals 16 is an output terminal for the AC power. The two third power terminals 16 are spaced apart from each other in the second direction y. As shown in FIG. 4 , the two third power terminals 16 are located on the opposite side of the first conductive portion 1121 in the first direction x, with the second conductive portion 1122 sandwiched therebetween. Each of the two third power terminals 16 extends from the second conductive portion 1122 toward the x2 side in the first direction x and protrudes from the sealing resin 50 toward the x2 side in the first direction x. As shown in FIG. 3 , each of the two third power terminals 16 includes a portion covered with the sealing resin 50 and a portion exposed from the sealing resin 50. In each third power terminal 16, the portion covered with the sealing resin 50 is bonded to the second conductive portion 1122. In addition, in each third power terminal 16, the portion exposed from the sealing resin 50 is used as the aforementioned output terminal of the semiconductor device A1.

[0033] In this embodiment, the semiconductor device A1 includes four first elements 21A and four second elements 21B. However, the number of first elements 21A and the number of second elements 21B are not limited to this configuration and may be changed as appropriate depending on the performance required of the semiconductor device A1. In the example shown in FIG. 5, four first elements 21A and four second elements 21B are arranged. The number of first elements 21A and the number of second elements 21B may be two, three, or five or more. The number of first elements 21A and the number of second elements 21B may be equal to or different from each other. The number of first elements 21A and the number of second elements 21B is determined by the current capacity handled by the semiconductor device A1.

[0034] The semiconductor device A1 is configured, for example, as a half-bridge switching circuit. In this case, a plurality of first elements 21A form an upper arm circuit of the semiconductor device A1, and a plurality of second elements 21B form a lower arm circuit. In the upper arm circuit, the plurality of first elements 21A are connected in parallel with each other, and in the lower arm circuit, the plurality of second elements 21B are connected in parallel with each other. Each first element 21A and each second element 21B are connected in series to form a bridge layer.

[0035] Each of the multiple signal terminals 45 may be a terminal for controlling the driving of each first element 21A and each second element 21B. Each of the multiple signal terminals 45 is a pin-shaped terminal, for example, a press-fit terminal. The multiple signal terminals 45 include multiple first signal terminals 46A to 46D and multiple second signal terminals 47A to 47D. The multiple first signal terminals 46A to 46D can be used for controlling each first element 21A, etc. The multiple second signal terminals 47A to 47D can be used for controlling each second element 21B, etc. Details of the multiple signal terminals 45 (the multiple first signal terminals 46A to 46D and the multiple second signal terminals 47A to 47D) will be described later.

[0036] The terminal support body 48 supports the plurality of signal terminals 45. The terminal support body 48 is interposed between the plurality of signal terminals 45 and the support surface 1120 of the first conductive portion 1121 or the support surface 1120 of the second conductive portion 1122 in the thickness direction z.

[0037] The terminal support 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is disposed on the first conductive portion 1121 and supports a plurality of first signal terminals 46A to 46D among the plurality of signal terminals 45. As shown in FIG. 16 , the first support portion 48A is bonded to the first conductive portion 1121 via a bonding layer 49. The bonding layer 49 may be conductive or insulating, and may be made of solder, for example. The second support portion 48B is disposed on the second conductive portion 1122 and supports a plurality of second signal terminals 47A to 47D among the plurality of signal terminals 45. Like the first support portion 48A, the second support portion 48B is bonded to the second conductive portion 1122 via a bonding layer (not shown).

[0038] The terminal support 48 (each of the first support portion 48A and the second support portion 48B) is made of, for example, a DBC substrate. The terminal support 48 has an insulating layer 481, a metal layer 482, and a metal layer 483 stacked on top of each other.

[0039] The insulating layer 481 is made of, for example, ceramics and has, for example, a rectangular shape in plan view.

[0040] As shown in FIG. 16 and other figures, the metal layer 482 is formed on the upper surface of the insulating layer 481. Each signal terminal 45 is provided upright on the metal layer 482. The metal layer 482 includes, for example, copper (Cu) or a copper (Cu) alloy. As shown in FIGS. 5 , 6 , 17 , and 18 , the metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, and a fifth portion 482E. The first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, and the fifth portion 482E are spaced apart and insulated from one another.

[0041] A plurality of wires 40 are joined to the fourth portion 482D, and the fourth portion 482D is electrically connected to the third electrode 213 (gate electrode) of each of the first elements 21A (second elements 21B) via the wires 40. A plurality of wires 42 are connected between the fourth portion 482D and the first portion 482A. As a result, the first portion 482A is electrically connected to the third electrode 213 (gate electrode) of each of the first elements 21A (second elements 21B) via the wires 42, the fourth portion 482D, and the wires 40. As shown in FIGS. 5 and 6 , a first signal terminal 46A is joined to the first portion 482A of the first support portion 48A, and a second signal terminal 47A is joined to the first portion 482A of the second support portion 48B.

[0042] A plurality of wires 41 are joined to the second portion 482B, and the second portion 482B is electrically connected to the fourth electrode 214 (source sense electrode) of each first element 21A (each second element 21B) via each wire 41. As shown in Figures 5 and 6, a first signal terminal 46B is joined to the second portion 482B of the first support portion 48A, and a second signal terminal 47B is joined to the second portion 482B of the second support portion 48B.

[0043] The first signal terminal 46C and the second signal terminal 47C are joined to the third portion 482C. As shown in Figures 5 and 6, the first signal terminal 46C is joined to the third portion 482C of the first support portion 48A, and the second signal terminal 47C is joined to the third portion 482C of the second support portion 48B. The first signal terminal 46D and the second signal terminal 47D are joined to the fifth portion 482E. The first signal terminal 46C is joined to the fifth portion 482E of the first support portion 48A. The second signal terminal 47D is joined to the fifth portion 482E of the second support portion 48B.

[0044] 16, the metal layer 483 is formed on the lower surface (surface facing the z2 side in the thickness direction z) of the insulating layer 481. As shown in Fig. 16, the metal layer 483 of the first support portion 48A is joined to the first conductive portion 1121 via a bonding layer 49. The metal layer 483 of the second support portion 48B, like the metal layer 483 of the first support portion 48A, is joined to the second conductive portion 1122 via a bonding layer (not shown).

[0045] Each of the plurality of wires 40, 41, and 42 provides electrical continuity between two separate locations. Each of the wires 40, 41, and 42 is a so-called bonding wire. In this embodiment, each of the wires 40, 41, and 42 is formed by wedge bonding. Alternatively, each of the wires 40, 41, and 42 may be formed by ball bonding. The material of each of the wires 40, 41, and 42 is not particularly limited and may include, for example, gold (Au), aluminum (Al), or copper (Cu). The wires 40, 41, and 42 are omitted from FIGS. 3, 8 to 12, and 15.

[0046] The first wire 43 and the second wire 44 are each a wire for measuring the temperature of the semiconductor element 21. Like the wires 40, 41, and 42, the first wire 43 and the second wire 44 are each a bonding wire. In this embodiment, the first wire 43 and the second wire 44 are formed by wedge bonding. Alternatively, the first wire 43 and the second wire 44 may be formed by ball bonding.

[0047] As shown in FIGS. 6 , 17 , 18 , etc., in this embodiment, two first wires 43 are provided. One of the first wires 43 has one end joined to the first electrode 212 of the semiconductor element 21 (first element 21A) and the other end joined to the first signal terminal 46C. The other first wire 43 has one end joined to the first electrode 212 of the semiconductor element 21 (second element 21B) and the other end joined to the second signal terminal 47C. Also, in this embodiment, two second wires 44 are provided. One of the second wires 44 has one end joined to the first electrode 212 of the semiconductor element 21 (first element 21A) and the other end joined to the fifth portion 482E of the first support portion 48A. The other second wire 44 has one end joined to the first electrode 212 of the semiconductor element 21 (second element 21B) and the other end joined to the fifth portion 482E of the second support portion 48B.

[0048] The first wire 43 and the second wire 44 joined to the first electrode 212 of the first element 21A (second element 21B) are electrically connected to each other. In this embodiment, the first wire 43 and the second wire 44 are joined to each other in an overlapping manner in the first electrode 212. More specifically, one end of the first wire 43 is directly joined to the first electrode 212, and one end of the second wire 44 is joined to the end of the first wire 43 joined to the first electrode 212. Note that the first wire 43 and the second wire 44 are omitted from FIGS. 3 , 11 , 12 , and 15 .

[0049] The material of the first wire 43 contains a first metal as a main component. The material of the second wire 44 contains a second metal as a main component, the second metal having a thermoelectric power different from that of the first metal. Thermoelectric power refers to the thermoelectric power per 1 K when a temperature difference is applied between both ends of a conductive material. In this embodiment, the first metal is constantan (an alloy of Cu and Ni: 55Cu-45Ni). In this embodiment, the second metal is Cu (copper). The second wire 44 (Cu) and the first wire 43 (constantan) function as a thermocouple. A thermocouple made of Cu and constantan is widely known as a T-type thermocouple. In this embodiment, the junction between the first wire 43 and the second wire 44 (the joined ends of the first wire 43 and the second wire 44) corresponds to the temperature measuring junction (hot junction) of the thermocouple.

[0050] The multiple first signal terminals 46A-46D are arranged at intervals in the second direction y. As shown in Figures 5, 11, and 12, each of the first signal terminals 46A-46D is supported by the first conductive portion 1121 via a terminal support body 48 (first support portion 48A). As shown in Figures 4 and 5, each of the first signal terminals 46A-46D is located in the first direction x between the multiple first elements 21A and the first power terminal 14 and two second power terminals 15.

[0051] The first signal terminal 46A is a terminal (gate terminal) for inputting a drive signal to the multiple first elements 21A. The first signal terminal 46A is electrically connected to the third electrode 213 (gate electrode) of each first element 21A via the first portion 482A, the wire 42, the fourth portion 482D, and the wire 40. A drive signal for driving the multiple first elements 21A is input to the first signal terminal 46A (for example, a gate voltage is applied).

[0052] The first signal terminal 46B is a terminal (source sense terminal) for detecting source signals of the multiple first elements 21A. The first signal terminal 46B is electrically connected to the fourth electrode 214 (source sense electrode) of each first element 21A via the second portion 482B and the wire 41. The voltage (voltage corresponding to the source current) applied to each first electrode 212 (source electrode) of the multiple first elements 21A is detected from the first signal terminal 46B.

[0053] The first signal terminal 46C and the first signal terminal 46D are terminals for measuring the temperature of the semiconductor element 21 (first element 21A). The first signal terminal 46C is electrically connected to the first wire 43 described above. In this embodiment, the first wire 43 is directly bonded to the first signal terminal 46C. The second wire 44 is electrically connected to the first signal terminal 46D. In this embodiment, the first signal terminal 46D is electrically connected to the second wire 44 via the fifth portion 482E. The first signal terminal 46C has a portion containing a first metal (constantan) as a constituent material. The first signal terminal 46C corresponds to the first terminal in this disclosure. The first signal terminal 46D has a portion containing a second metal (Cu) as a constituent material. The first signal terminal 46D corresponds to the second terminal in this disclosure. The upper end of each of the first signal terminals 46C and 46D is a portion to which a measuring instrument can be connected and corresponds to the reference junction (cold junction) of a thermocouple.

[0054] The second signal terminals 47A to 47D are arranged at intervals in the second direction y. As shown in Figures 5, 11, and 15, the second signal terminals 47A to 47D are supported by the second conductive portion 1122 via the terminal support body 48 (second support portion 48B). As shown in Figures 4 and 5, each of the second signal terminals 47A to 47D is located between the second elements 21B and the two third power terminals 16 in the first direction x.

[0055] The second signal terminal 47A is a terminal (gate terminal) for inputting drive signals to the multiple second elements 21B. The second signal terminal 47A is electrically connected to the third electrode 213 (gate electrode) of each second element 21B via the first portion 482A, wire 42, fourth portion 482D, and wire 40. A drive signal for driving the multiple second elements 21B is input to the second signal terminal 47A (e.g., a gate voltage is applied). The second signal terminal 47B is a terminal (source sense terminal) for detecting source signals to the multiple second elements 21B. The second signal terminal 47B is electrically connected to the fourth electrode 214 (source sense electrode) of each second element 21B via the second portion 482B and wire 41. The voltage applied to each first electrode 212 (source electrode) of each second element 21B (voltage corresponding to the source current) is detected from the second signal terminal 47B.

[0056] The second signal terminal 47C and the second signal terminal 47D are terminals for measuring the temperature of the semiconductor element 21 (second element 21B). The second signal terminal 47C is electrically connected to the first wire 43 described above. In this embodiment, the first wire 43 is directly bonded to the second signal terminal 47C. The second signal terminal 47D is electrically connected to the second wire 44 via the fifth portion 482E. The second signal terminal 47C has a portion containing a first metal (constantan) as a constituent material. The second signal terminal 47C corresponds to the first terminal in this disclosure. The second signal terminal 47D has a portion containing a second metal (Cu) as a constituent material. The first signal terminal 46D corresponds to the second terminal in this disclosure. The upper end of each of the second signal terminals 47C and 47D is a portion to which a measuring instrument can be connected and corresponds to the reference junction (cold junction) of a thermocouple.

[0057] Each of the plurality of signal terminals 45 (the plurality of first signal terminals 46A to 46D and the plurality of second signal terminals 47A to 47D) includes a holder 451 and a metal pin 452.

[0058] The holder 451 is made of a conductive material. The holder 451 is disposed on the support surface 1120 of the support conductor 112 (support substrate 11). In this embodiment, the holder 451 is bonded to the terminal support 48 (metal layer 482) via a conductive bonding layer 459, as shown in FIG. 16. As shown in FIGS. 16 to 18, the holder 451 includes a cylindrical portion 453, a first flange portion 454, and a second flange portion 455.

[0059] The tubular portion 453 extends in the thickness direction z and has, for example, a cylindrical shape. The first flange portion 454 is connected to the lower end of the tubular portion 453 (the end on the z2 side in the thickness direction z). The first flange portion 454 extends in the circumferential direction of the tubular portion 453 as viewed in the thickness direction z. In this embodiment, the first flange portion 454 is joined to the terminal support 48 (metal layer 482) via a conductive bonding layer 459. The second flange portion 455 is connected to the upper end of the tubular portion 453 (the end on the z1 side in the thickness direction z) and extends in the circumferential direction of the tubular portion 453 as viewed in the thickness direction z. A metal pin 452 is inserted through at least the second flange portion 455 and a portion of the tubular portion 453 of the holder 451. A portion of the holder 451 is covered with sealing resin 50.

[0060] The metal pin 452 is a rod-shaped member extending in the thickness direction z. The metal pin 452 is supported by the holder 451 by being press-fitted into the holder 451. The metal pin 452 is electrically connected to the terminal support 48 (metal layer 482) via the holder 451 and the conductive bonding layer 459. The metal pin 452 protrudes toward the z1 side in the thickness direction z from the upper surface of the sealing resin 50 (a resin main surface 51 described below).

[0061] The holders 451 and metal pins 452 of the first signal terminals 46C, 46D, second signal terminals 47C, and second signal terminals 47D will be described in more detail. The holders 451 of the first signal terminals 46C and second signal terminals 47C will be referred to as "first holders 4511" as appropriate to distinguish them from the other holders 451. The holders 451 of the first signal terminals 46D and second signal terminals 47D will be referred to as "second holders 4512" as appropriate to distinguish them from the other holders 451. Furthermore, the metal pins 452 of the first signal terminals 46C and second signal terminals 47C will be referred to as "first metal pins 4521" as appropriate to distinguish them from the other metal pins 452. The holders 451 of the first signal terminals 46D and second signal terminals 47D will be referred to as "second holders 4512" as appropriate to distinguish them from the other holders 451.

[0062] In this embodiment, the constituent material of the first holder 4511 contains a first metal (constantan) as a main component. The constituent material of the first metal pin 4521 contains a first metal (constantan) as a main component. The constituent material of the second holder 4512 contains a second metal (Cu) as a main component. The constituent material of the second metal pin 4522 contains a second metal (Cu) as a main component.

[0063] 17, one end of the first wire 43 is joined to the first electrode 212 of the semiconductor element 21 (first element 21A), and the other end is directly joined to the first flange 454 of the first holder 4511 of the first signal terminal 46C. As can be seen from Fig. 18, one end of the first wire 43 is joined to the first electrode 212 of the semiconductor element 21 (second element 21B), and the other end is directly joined to the first flange 454 of the first holder 4511 of the second signal terminal 47C.

[0064] As shown in FIGS. 4 and 8 , the first conductive member 31 is conductively bonded to the first electrodes 212 of the plurality of first elements 21A and the second conductive portion 1122. This allows the first electrodes 212 of the plurality of first elements 21A to be electrically connected to the second conductive portion 1122. The constituent material of the first conductive member 31 is not particularly limited and may include, for example, Cu. The first conductive member 31 is a plate-shaped metal clip (plate-shaped conductive member). As shown in FIGS. 4 and 8 , the first conductive member 31 has a main body portion 311, a plurality of first joint portions 312, and a plurality of second joint portions 313.

[0065] The main body portion 311 forms a major portion of the first conductive member 31. As shown in FIG. 4 , the main body portion 311 extends in the second direction y. As shown in FIGS. 4 and 8 , the main body portion 311 straddles the first conductive portion 1121 and the second conductive portion 1122. As shown in FIG. 4 , a plurality of through holes 310 are formed in the main body portion 311. Each of the plurality of through holes 310 penetrates the main body portion 311 in the thickness direction z. In a plan view, the plurality of through holes 310 overlap between the first conductive portion 1121 and the second conductive portion 1122. This allows the sealing resin 50 to flow smoothly downward in the thickness direction z of the main body portion 311 (toward the z2 side in the thickness direction z) when the sealing resin 50 is formed.

[0066] As shown in FIGS. 4 and 8 , the multiple first joints 312 are individually joined to the first electrodes 212 of the multiple first elements 21A. Each of the multiple first joints 312 faces one of the first electrodes 212 of the multiple first elements 21A. In a plan view, each first joint 312 extends from the main body 311 toward the x1 side in the first direction x. In the illustrated example, the multiple first joints 312 are bifurcated from the main body 311, but they do not necessarily need to be bifurcated. The base end of each first joint 312 (the end connected to the main body 311) is bent downward in the thickness direction z (toward the z2 side in the thickness direction z). Therefore, the tip of each first joint 312 (the end opposite to the end connected to the main body 311) is located downward in the thickness direction z (toward the z2 side in the thickness direction z) relative to the main body 311 in the thickness direction z.

[0067] As shown in FIGS. 4 and 8 , the multiple second joints 313 are joined to the second conductive portion 1122. Each of the multiple second joints 313 faces the second conductive portion 1122. In a plan view, each second joint 313 extends from the main body portion 311 toward the x2 side in the first direction x. The base end of each second joint 313 (the end connected to the main body portion 311) is bent downward in the thickness direction z (toward the z2 side in the thickness direction z). Therefore, the tip end of each second joint 313 (the end opposite to the end connected to the main body portion 311) is located downward in the thickness direction z (toward the z2 side in the thickness direction z) relative to the main body portion 311 in the thickness direction z.

[0068] 9 , the semiconductor device A1 further includes a first conductive bonding layer 33. The first conductive bonding layer 33 is interposed between the first electrodes 212 of the first elements 21A and the first bonding portions 312. The first conductive bonding layer 33 conductively bonds the first electrodes 212 of the first elements 21A to the first bonding portions 312. The first conductive bonding layer 33 is, for example, solder. Alternatively, the first conductive bonding layer 33 may include a sintered body of metal particles (sintered metal).

[0069] 8 , the semiconductor device A1 further includes a second conductive bonding layer 34. The second conductive bonding layer 34 is interposed between the second conductive portion 1122 and each of the plurality of second bonding portions 313. The second conductive bonding layer 34 conductively bonds the second conductive portion 1122 to the second bonding portion 313. More specifically, the second bonding portion 313 (first conductive member 31) is bonded to the support surface 1120 of the second conductive portion 1122 via the second conductive bonding layer 34. The second conductive bonding layer 34 is, for example, solder. Alternatively, the second conductive bonding layer 34 may include a sintered body of metal particles (sintered metal).

[0070] As shown in FIG. 3 , the second conductive member 32 is conductively joined to the first electrodes 212 of the plurality of second elements 21B and the two second power terminals 15. This electrically connects the first electrodes 212 of the plurality of second elements 21B to the two second power terminals 15. The constituent material of the second conductive member 32 is not particularly limited, and may include, for example, Cu. The second conductive member 32 is a plate-shaped metal clip. As shown in FIGS. 3 , 8 , and 11 to 14 , the second conductive member 32 has a pair of main body portions 321, a plurality of third joint portions 322, a pair of fourth joint portions 324, a plurality of intermediate portions 326, a plurality of cross beam portions 327, and a pair of hanging portions 328.

[0071] As shown in Fig. 3 , the pair of main bodies 321 are positioned apart from each other in the second direction y. The pair of main bodies 321 extend in the first direction x. As shown in Figs. 8 and 12 , the pair of main bodies 321 are arranged parallel to the upper surfaces of the first conductive part 1121 and the second conductive part 1122. The pair of main bodies 321 are positioned further away from the first conductive part 1121 and the second conductive part 1122 than the main body part 311 of the first conductive member 31.

[0072] 3, 13, and 14, the intermediate portions 326 are spaced apart from one another in the second direction y and are located between the pair of main body portions 321 in the second direction y. The intermediate portions 326 extend in the first direction x.

[0073] As shown in FIGS. 3 and 14 , the third joints 322 are individually joined to the first electrodes 212 of the second elements 21B. Each of the third joints 322 faces one of the first electrodes 212 of the second elements 21B. In a plan view, the third joints 322 extend in the second direction y from the intermediate portions 326. The base end of each third joint 322 (the end connected to the intermediate portion 326) is bent downward in the thickness direction z (toward the z2 side in the thickness direction z). Therefore, the tip of each third joint 322 (the end opposite to the end connected to the intermediate portion 326) is located downward in the thickness direction z (toward the z2 side in the thickness direction z) from the intermediate portion 326 in the thickness direction z.

[0074] 3 and 8 , the pair of fourth joint portions 324 are individually joined to the two second power terminals 15. Each of the pair of fourth joint portions 324 faces a corresponding one of the two second power terminals 15.

[0075] As shown in Fig. 3 , the multiple cross beam portions 327 are arranged along the second direction y. In a plan view, the multiple cross beam portions 327 include regions that individually overlap the multiple first joint portions 312 of the first conductive member 31. As shown in Figs. 3 and 13 , one of the multiple cross beam portions 327 that is located at the center in the second direction y is connected on both sides in the second direction y to the multiple intermediate portions 326. The remaining two of the multiple cross beam portions 327 are connected on both sides in the second direction y to one of the pair of main body portions 321 and one of the multiple intermediate portions 326.

[0076] 3 and 13 , the pair of hanging portions 328 are individually connected to the pair of main body portions 321. As shown in FIG. 13 , each of the pair of hanging portions 328 extends downward in the thickness direction z (toward the z2 side in the thickness direction z) from the corresponding one of the pair of main body portions 321. Each of the pair of hanging portions 328 is connected to the outer edge of the corresponding one of the pair of main body portions 321 in the second direction y. In the illustrated example, the lower ends (edges on the z2 side in the thickness direction z) of the pair of hanging portions 328 overlap the first conductive portion 1121 when viewed along the second direction y.

[0077] 10 , the semiconductor device A1 further includes a third conductive bonding layer 35. The third conductive bonding layer 35 is interposed between the first electrodes 212 of the second elements 21B and the third bonding portions 322. The third conductive bonding layer 35 conductively bonds the first electrodes 212 of the second elements 21B to the third bonding portions 322. The third conductive bonding layer 35 is, for example, solder. Alternatively, the third conductive bonding layer 35 may include a sintered body of metal particles (sintered metal).

[0078] 8 , the semiconductor device A1 further includes a fourth conductive bonding layer 36. The fourth conductive bonding layer 36 is interposed between the two second power terminals 15 and the pair of fourth joints 324. The fourth conductive bonding layer 36 conductively bonds the two second power terminals 15 and the pair of fourth joints 324. The fourth conductive bonding layer 36 is, for example, solder. Alternatively, the fourth conductive bonding layer 36 may include a sintered body of metal particles (sintered metal).

[0079] As shown in FIGS. 1 to 16 , the sealing resin 50 covers the semiconductor elements 21, the first conductive member 31, the second conductive member 32, the wires 40, the wires 41, the wires 42, the first wires 43, the second wires 44, and the terminal support 48. Furthermore, the sealing resin 50 covers a portion of each of the support substrate 11, the power terminals 13, and the signal terminals 45. The sealing resin 50 has electrical insulation properties. The sealing resin 50 includes, for example, a black epoxy resin. The sealing resin 50 is formed, for example, by molding. As shown in FIGS. 1 to 3 and 7 to 15 , the sealing resin 50 has a resin main surface 51, a resin back surface 52, resin side surfaces 531 to 534, a plurality of recesses 511, and a pair of recesses 531a.

[0080] As shown in FIGS. 8 and 11 to 15 , the resin main surface 51 faces the same direction in the thickness direction z as the upper surface (support surface 1120) of the first conductive portion 1121 and the upper surface (support surface 1120) of the second conductive portion 1122. Metal pins 452 of the signal terminals 45 (the first signal terminals 46A to 46D and the second signal terminals 47A to 47D) protrude from the resin main surface 51. As shown in FIGS. 8 and 11 to 5 , the resin back surface 52 faces the opposite side of the resin main surface 51 in the thickness direction z. As shown in FIG. 7 , the resin back surface 52 has a frame shape in a plan view that surrounds the lower surface (bottom surface 1130) of the back surface metal layer 113 of the support substrate 11. The back surface metal layer 113 of the support substrate 11 is exposed from the resin back surface 52. The lower surface (bottom surface 1130) of the back surface metal layer 113 is, for example, flush with the resin back surface 52.

[0081] As shown in Figures 2, 3, 8, and 11, the resin side surface 531 and the resin side surface 532 are spaced apart from each other in the first direction x. The resin side surface 531 and the resin side surface 532 face opposite each other in the first direction x and extend in the second direction y. The resin side surface 531 and the resin side surface 532 are connected to the resin main surface 51. The resin side surface 531 faces the x1 side in the first direction x, and the resin side surface 532 faces the x2 side in the first direction x. A first power terminal 14 and two second power terminals 15 each protrude from the resin side surface 531. Two third power terminals 16 each protrude from the resin side surface 532.

[0082] 2, 3, and 12 to 15, the resin side surface 533 and the resin side surface 534 are spaced apart from each other in the second direction y. The resin side surface 533 and the resin side surface 534 face opposite each other in the second direction y and extend in the first direction x. The resin side surface 533 and the resin side surface 534 are connected to the resin main surface 51 and the resin back surface 52. The resin side surface 533 faces the y1 side in the second direction y, and the resin side surface 534 faces the y2 side in the second direction y.

[0083] 1 , 11 , 12 , 15 , etc., each of the plurality of recesses 511 is recessed toward the z2 side in the thickness direction z from the resin main surface 51. In the present embodiment, the plurality of recesses 511 are individually provided corresponding to the plurality of signal terminals 45, respectively.

[0084] 2, the pair of recesses 531a are recessed from the resin side surface 531 toward the x2 side in the first direction x. The pair of recesses 531a extend from the resin main surface 51 to the resin back surface 52 in the thickness direction z. The pair of recesses 531a are located on both sides of the first power terminal 14 in the second direction y.

[0085] Next, the operation of the semiconductor device A1 will be described.

[0086] In the semiconductor device A1, a first wire 43 and a second wire 44 are connected to the semiconductor element 21 (first electrode 212). The first wire 43 is primarily composed of a first metal (constantan in this embodiment). The second wire 44 is primarily composed of a second metal (Cu in this embodiment) having a thermoelectric power different from that of the first metal and is electrically connected to the first wire 43. The first wire 43 and the second wire 44 function as a thermocouple, with the first electrode 212, to which the first wire 43 and the second wire 44 are commonly connected, serving as a temperature measuring junction. The first wire 43 is electrically connected to the first signal terminal 46C (second signal terminal 47C), and the second wire 44 is electrically connected to the first signal terminal 46D (second signal terminal 47D). The first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D) are temperature measurement terminals to which a measuring instrument can be connected and serve as reference junctions of the thermocouple. This configuration allows the temperature of the semiconductor element 21 (first electrode 212, which is the source electrode) to be measured based on the thermoelectromotive force generated by the temperature difference between the first electrode 212 (source electrode), which is the temperature measurement junction, and the first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D), which are the reference junctions. This allows the semiconductor device A1 to measure the temperature of the semiconductor element 21 with greater accuracy than when a temperature sensor is disposed near the semiconductor element 21.

[0087] The temperature of the first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D) decreases with increasing distance from the first wire 43 and the second wire 44 connected thereto. That is, temperature differences can occur between different locations on the first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D). In the semiconductor device A1, the first signal terminal 46C (second signal terminal 47C) has a portion containing a first metal as a constituent material. The first signal terminal 46D (second signal terminal 47D) has a portion containing a second metal as a constituent material. This configuration allows for the detection of thermoelectromotive forces generated by temperature differences between the first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D). Therefore, the semiconductor device A1 can improve the accuracy of temperature measurement of the semiconductor element 21.

[0088] In this embodiment, the first metal is constantan and the second metal is Cu, so that the first wire 43 and the first signal terminal 46C (second signal terminal 47C) and the second wire 44 and the first signal terminal 46D (second signal terminal 47D) function as a T-type thermocouple.

[0089] The first signal terminal 46C (second signal terminal 47C) includes a conductive first holder 4511 and a first metal pin 4521 inserted into the first holder 4511. The first metal pin 4521 and the first holder 4511 each contain a first metal as a main component. The first signal terminal 46D (second signal terminal 47D) includes a conductive second holder 4512 and a first metal pin 4521 inserted into the second holder 4512. The second metal pin 4522 and the second holder 4512 each contain a second metal as a main component. This configuration allows for accurate detection of thermoelectromotive forces generated by temperature differences between the first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D). This allows the semiconductor device A1 to more accurately measure the temperature of the semiconductor element 21.

[0090] The first wire 43 is directly bonded to the first holder 4511. Specifically, the first holder 4511 has a cylindrical portion 453 extending in the thickness direction z and a first flange portion 454 connected to the end of the cylindrical portion 453 on the z2 side in the thickness direction z and extending circumferentially around the cylindrical portion 453 as viewed in the thickness direction z. The first wire 43 is directly bonded to the first flange portion 454. With this configuration, the first metal is the main component along the entire path from the end (temperature measurement junction) of the first wire 43 bonded to the first electrode 212 to the upper end (reference junction) of the first metal pin 4521. This allows for more accurate detection of the thermoelectromotive force generated by the temperature difference between the temperature measurement junction and the reference junction. This is preferable for improving the accuracy of the measured temperature of the semiconductor element 21.

[0091] In this embodiment, the first wire 43 and the second wire 44 are joined to each other while overlapping each other at the first electrode 212 of the semiconductor element 21. With this configuration, the temperature of the semiconductor element 21 can be measured with high accuracy even if the constituent materials of the first wire 43 and the second wire 44 are different from the constituent material of the first electrode 212. Therefore, there is a high degree of freedom in selecting the constituent materials of the first wire 43 and the second wire 44.

[0092] In the present embodiment, the first metal constituting the first wire 43 and the first signal terminal 46C (second signal terminal 47C) is constantan, and the second metal constituting the second wire 44 and the first signal terminal 46D (second signal terminal 47D) is copper. However, this is not limiting. The first metal and the second metal may be metals with different thermoelectric powers. For example, the first metal may be aluminum (Al) and the second metal may be copper (Cu). Because aluminum and copper have different thermoelectric powers, the first wire 43 and the first signal terminal 46C (second signal terminal 47C) and the second wire 44 and the first signal terminal 46D (second signal terminal 47D) function as a thermocouple. Furthermore, aluminum is commonly used as a bonding wire and is readily available at a low cost compared to constantan wire. Furthermore, the combination of the first metal and the second metal may be alumel (94Ni-3Al-1Si-2Mg) and chromel (90Ni-10Cr) as in a K-type thermocouple, constantan and Fe as in a J-type thermocouple, or constantan and chromel as in a E-type thermocouple. The combination of the first metal and the second metal is not limited to those described above.

[0093] In the present embodiment, the first wire 43 and the second wire 44 are joined to each other while overlapping each other at the first electrode 212. However, the present invention is not limited to this. The first wire 43 and the second wire 44 may each be joined to the first electrode 212, and the first wire 43 and the second wire 44 may be spaced apart from each other at the first electrode 212.

[0094] In addition, in the present embodiment, the first electrode 212 to which the first wire 43 and the second wire 44 are bonded is described as being made of Cu, but this is not limiting. The first electrode 212 may be configured, for example, by bonding a Cu metal layer to an Al metal layer. In this case, the first wire 43 and the second wire 44 are bonded to the Cu metal layer on the surface side.

[0095] 19 to 32 show modified examples of the semiconductor device of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and redundant explanations will be omitted. Furthermore, the configurations of the various parts in each modified example can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0096] 19 to 21 show a first modified example of the semiconductor device A1. Fig. 19 is a partially enlarged plan view similar to Fig. 6, showing a semiconductor device A11 according to this modified example. Figs. 20 and 21 are partially enlarged plan views enlarging a part of Fig. 19.

[0097] The semiconductor device A11 of this modification differs from the semiconductor device A1 of the above embodiment in the configuration of the first holders 4511 for the first signal terminal 46C and the second signal terminal 47C (first terminals). In the first holder 4511, the first flange 454 has a first extension 454a. The first extension 454a partially extends in a direction perpendicular to the thickness direction z. In the illustrated example, the first extension 454a partially extends in the second direction y. As shown in FIGS. 19 and 20 , one end of the first wire 43 is joined to the first electrode 212 of the semiconductor element 21 (first element 21A), and the other end of the first wire 43 is directly joined to the first extension 454a of the first holder 4511 of the first signal terminal 46C. 19 and 21 , one end of the first wire 43 is joined to the first electrode 212 of the semiconductor element 21 (second element 21B), and the other end of the first wire 43 is directly joined to the first extending portion 454a of the first holder 4511 in the second signal terminal 47C. According to the above configuration, joining of the first wire 43 to the first holder 4511 (first extending portion 454a) can be performed relatively easily.

[0098] In the semiconductor device A11, the first wire 43 is primarily composed of a first metal (constantan in this example). The second wire 44 is primarily composed of a second metal (Cu in this example) having a different thermoelectric power from the first metal and is electrically connected to the first wire 43. The first wire 43 and the second wire 44 function as a thermocouple, with the first electrode 212, to which the first wire 43 and the second wire 44 are commonly connected, serving as a temperature measurement junction. The first signal terminal 46C (second signal terminal 47C) is electrically connected to the first signal terminal 46D (second signal terminal 47D), and the second wire 44 is electrically connected to the first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D). The first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D) are temperature measurement terminals to which a measuring instrument can be connected and serve as reference junctions of the thermocouple. With this configuration, the temperature of the semiconductor element 21 (the first electrode 212 serving as the source electrode) can be measured based on the thermoelectromotive force generated by the temperature difference between the first electrode 212 (the source electrode) serving as the temperature measurement junction and the first signal terminal 46C (the second signal terminal 47C) and the first signal terminal 46D (the second signal terminal 47D) serving as the reference junction. This allows the semiconductor device A11 to accurately measure the temperature of the semiconductor element 21.

[0099] In the semiconductor device A11, the first signal terminal 46C (second signal terminal 47C) has a portion containing a first metal as a constituent material. The first signal terminal 46D (second signal terminal 47D) has a portion containing a second metal as a constituent material. This configuration makes it possible to detect thermoelectromotive forces generated by the temperature difference between the first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D). Therefore, the semiconductor device A11 can improve the accuracy of temperature measurement of the semiconductor element 21.

[0100] The first wire 43 is directly bonded to the first extension 454a of the first holder 4511. With this configuration, the first metal is the main component along the entire path from the end (temperature measurement junction) of the first wire 43 bonded to the first electrode 212 to the upper end (reference junction) of the first metal pin 4521. This allows for more accurate detection of the thermoelectromotive force generated by the temperature difference between the temperature measurement junction and the reference junction. This is preferable for improving the accuracy of the measured temperature of the semiconductor element 21. In addition, the semiconductor device A11 exhibits the same effects as the semiconductor device A1 of the above embodiment.

[0101] Second Modification: Figures 22 to 24 show a second modification of the semiconductor device A1. Figure 22 is a partially enlarged plan view similar to Figure 6, showing a semiconductor device A12 according to this modification. Figures 23 and 24 are partially enlarged plan views of a portion of Figure 22.

[0102] In the semiconductor device A12 of this modification, the bonding position of the first wire 43 differs from that of the semiconductor device A1 of the above embodiment. As shown in FIGS. 22 and 23 , one end of the first wire 43 is bonded to the first electrode 212 of the semiconductor element 21 (first element 21A). The other end of the first wire 43 is bonded to the third portion 482C of the metal layer 482 of the first support portion 48A. The first holder 4511 of the first signal terminal 46C is bonded to the third portion 482C, and the first wire 43 is electrically connected to the first signal terminal 46C via the third portion 482C. As shown in FIGS. 22 and 23 , one end of the first wire 43 is bonded to the first electrode 212 of the semiconductor element 21 (second element 21B). The other end of the first wire 43 is bonded to the third portion 482C of the metal layer 482 of the second support portion 48B. A first holder 4511 of the second signal terminal 47C is joined to the third portion 482C, and the first wire 43 is electrically connected to the second signal terminal 47C via the third portion 482C.

[0103] In the semiconductor device A12, the first wire 43 is primarily composed of a first metal (constantan in this example). The second wire 44 is primarily composed of a second metal (Cu in this example) having a different thermoelectric power from the first metal and is electrically connected to the first wire 43. The first wire 43 and the second wire 44 function as a thermocouple, with the first electrode 212, to which the first wire 43 and the second wire 44 are commonly connected, serving as a temperature measurement junction. The first signal terminal 46C (second signal terminal 47C) is electrically connected to the first signal terminal 46D (second signal terminal 47D), and the second wire 44 is electrically connected to the first signal terminal 46C (second signal terminal 47C). The first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D) are temperature measurement terminals to which a measuring instrument can be connected and serve as reference junctions of the thermocouple. With this configuration, the temperature of the semiconductor element 21 (the first electrode 212 serving as the source electrode) can be measured based on the thermoelectromotive force generated by the temperature difference between the first electrode 212 (the source electrode) serving as the temperature measurement junction and the first signal terminal 46C (the second signal terminal 47C) and the first signal terminal 46D (the second signal terminal 47D) serving as the reference junction. This allows the semiconductor device A12 to accurately measure the temperature of the semiconductor element 21.

[0104] In the semiconductor device A12, the first signal terminal 46C (second signal terminal 47C) has a portion containing a first metal as a constituent material. The first signal terminal 46D (second signal terminal 47D) has a portion containing a second metal as a constituent material. This configuration makes it possible to detect thermoelectromotive forces generated by the temperature difference between the first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D). Therefore, the semiconductor device A12 can improve the accuracy of temperature measurement of the semiconductor element 21.

[0105] The first wire 43 is joined to the third portion 482C to which the first signal terminal 46C (second signal terminal 47C) is joined. With this configuration, the first metal is the main component for most of the path from the end (temperature measurement junction) of the first wire 43 joined to the first electrode 212 to the upper end (reference junction) of the first metal pin 4521. This allows for more accurate detection of the thermoelectromotive force generated by the temperature difference between the temperature measurement junction and the reference junction. This is preferable for improving the accuracy of the measured temperature of the semiconductor element 21. Additionally, the semiconductor device A12 exhibits the same effects as the semiconductor device A1 of the above embodiment.

[0106] 25 and 26 show a third modification of the semiconductor device A1. Fig. 25 is a partially enlarged plan view similar to Fig. 6, showing a semiconductor device A13 according to this modification. Fig. 26 is a partially enlarged cross-sectional view taken along line XXVI-XXVI in Fig. 25.

[0107] In the semiconductor device A13 of this modification, the configuration of the terminal support 48 (first support portion 48A and second support portion 48B) differs from that of the semiconductor device A1 of the above embodiment. In each of the first support portion 48A and the second support portion 48B, a surface-side metal layer 484 is provided on the third portion 482C. The surface-side metal layer 484 is primarily composed of a first metal (constantan in this example). As shown in FIGS. 25 and 26 , one end of a first wire 43 is bonded to the first electrode 212 of the semiconductor element 21 (first element 21A). The other end of the first wire 43 is directly bonded to the surface-side metal layer 484 of the first support portion 48A. A first holder 4511 of the first signal terminal 46C is bonded to the surface-side metal layer 484, and the first wire 43 is electrically connected to the first signal terminal 46C via the surface-side metal layer 484. 25 , one end of the first wire 43 is joined to the first electrode 212 of the semiconductor element 21 (second element 21B), and the other end of the first wire 43 is directly joined to the surface-side metal layer 484 of the second support portion 48B. A first holder 4511 of the second signal terminal 47C is joined to the surface-side metal layer 484, and the first wire 43 is electrically connected to the second signal terminal 47C via the surface-side metal layer 484.

[0108] In the semiconductor device A13, the first wire 43 is primarily composed of a first metal (constantan in this example). The second wire 44 is primarily composed of a second metal (Cu in this example) having a different thermoelectric power from the first metal and is electrically connected to the first wire 43. The first wire 43 and the second wire 44 function as a thermocouple, with the first electrode 212, to which the first wire 43 and the second wire 44 are commonly connected, serving as a temperature measurement junction. The first signal terminal 46C (second signal terminal 47C) is electrically connected to the first signal terminal 46D (second signal terminal 47D), and the second wire 44 is electrically connected to the first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D). The first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D) are temperature measurement terminals to which a measuring instrument can be connected and serve as reference junctions of the thermocouple. With this configuration, the temperature of the semiconductor element 21 (the first electrode 212 serving as the source electrode) can be measured based on the thermoelectromotive force generated by the temperature difference between the first electrode 212 (the source electrode) serving as the temperature measurement junction and the first signal terminal 46C (the second signal terminal 47C) and the first signal terminal 46D (the second signal terminal 47D) serving as the reference junction. This allows the semiconductor device A13 to accurately measure the temperature of the semiconductor element 21.

[0109] In the semiconductor device A13, the first signal terminal 46C (second signal terminal 47C) has a portion containing a first metal as a constituent material. The first signal terminal 46D (second signal terminal 47D) has a portion containing a second metal as a constituent material. This configuration makes it possible to detect thermoelectromotive forces generated by the temperature difference between the first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D). Therefore, the semiconductor device A13 can improve the accuracy of temperature measurement of the semiconductor element 21.

[0110] The first wire 43 is directly bonded to the surface-side metal layer 484 to which the first signal terminal 46C (second signal terminal 47C) is bonded. The surface-side metal layer 484 is primarily composed of the first metal. This configuration allows the entire path from the end (temperature measurement junction) of the first wire 43 bonded to the first electrode 212 to the upper end (reference junction) of the first metal pin 4521 to be primarily composed of the first metal. This allows for more accurate detection of the thermoelectromotive force generated by the temperature difference between the temperature measurement junction and the reference junction. This is advantageous in terms of improving the accuracy of the measured temperature of the semiconductor element 21. Additionally, the semiconductor device A13 exhibits the same effects as the semiconductor device A1 of the above embodiment.

[0111] Fourth Modification: Figures 27 to 32 show a fourth modification of the semiconductor device A1. Figure 27 is a partially enlarged plan view similar to Figure 5, showing a semiconductor device A14 according to this modification. Figure 28 is a partially enlarged plan view showing a portion of Figure 27 enlarged. Figure 29 is a cross-sectional view taken along line XXIX-XXIX in Figure 27. Figures 30 and 31 are partially enlarged plan views showing a portion of Figure 28 enlarged. Figure 32 is a partially enlarged cross-sectional view showing a portion of Figure 29 enlarged.

[0112] The semiconductor device A14 of this modification differs from the semiconductor device A1 of the above embodiment in the configuration of each of the signal terminals 45 (the first signal terminals 46A to 46D and the second signal terminals 47A to 47D). Each of the signal terminals 45 (the first signal terminals 46A to 46D and the second signal terminals 47A to 47D) includes a rod-shaped portion 456 and an extending portion 457. The rod-shaped portion 456 is a rod-shaped portion extending in the thickness direction z. As shown in FIG. 29 , the rod-shaped portion 456 protrudes toward the z1 side in the thickness direction z from the upper surface (resin principal surface 51) of the sealing resin 50. The extending portion 457 is connected to the lower end of the rod-shaped portion 456. The extending portion 457 extends from the rod-shaped portion 456 when viewed in the thickness direction z, which is the direction of the central axis of the rod-shaped portion 456. As shown in FIG. 32 , the extending portion 457 is directly bonded to the metal layer 482. There are no particular limitations on the method for directly bonding the extension 457 to the metal layer 482, and ultrasonic bonding, laser bonding, solid-phase diffusion bonding, etc. may be used as appropriate. In this example, ultrasonic bonding may be used.

[0113] In the semiconductor device A14, the constituent material of the first signal terminal 46C and the second signal terminal 47C contains a first metal (constantan in this example) as a main component, and the constituent material of the first signal terminal 46D and the second signal terminal 47D contains a second metal (Cu in this example) as a main component.

[0114] 28 and 30, one end of the first wire 43 is joined to the first electrode 212 of the semiconductor element 21 (first element 21A), and the other end of the first wire 43 is directly joined to the extending portion 457 of the first signal terminal 46C. As shown in Fig. 28 and 31, one end of the first wire 43 is joined to the first electrode 212 of the semiconductor element 21 (second element 21B), and the other end of the first wire 43 is directly joined to the extending portion 457 of the second signal terminal 47C.

[0115] As shown in FIGS. 29 and 32 , the sealing resin 50 has a plurality of recesses 512 and a plurality of recesses 513. Each of the recesses 512 and the recesses 513 is recessed from the resin main surface 51 toward the z2 side in the thickness direction z. The recesses 512 and the recesses 513 are individually provided corresponding to each of the signal terminals 45. More specifically, the recesses 512 are individually provided corresponding to each of the first signal terminals 46A, 46B, and 46D and the second signal terminals 47A, 47B, and 47D. Each of the recesses 512 reaches the terminal support 48. Each of the first signal terminals 46A, 46B, and 46D and the second signal terminals 47A, 47B, and 47D is exposed from the sealing resin 50. The recesses 513 are individually provided corresponding to each of the first signal terminals 46C and the second signal terminals 47C. Each of the plurality of recesses 513 reaches the extending portion 457. A portion of each of the first signal terminal 46C and the second signal terminal 47C (a portion of the extending portion 457) and the entire first wire 43 joined to the extending portion 457 are covered with sealing resin 50. Note that a plurality of recesses 513 having the above configuration may be provided so as to correspond to all of the signal terminals 45 (the plurality of first signal terminals 46A to 46D and the plurality of second signal terminals 47A to 47D).

[0116] In the semiconductor device A14, the first wire 43 is primarily composed of a first metal (constantan in this example). The second wire 44 is primarily composed of a second metal (Cu in this example) having a different thermoelectric power from the first metal and is electrically connected to the first wire 43. The first wire 43 and the second wire 44 function as a thermocouple, with the first electrode 212, to which the first wire 43 and the second wire 44 are commonly connected, serving as a temperature measurement junction. The first signal terminal 46C (second signal terminal 47C) is electrically connected to the first signal terminal 46D (second signal terminal 47D), and the second wire 44 is electrically connected to the first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D). The first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D) are temperature measurement terminals to which a measuring instrument can be connected and serve as reference junctions of the thermocouple. With this configuration, the temperature of the semiconductor element 21 (the first electrode 212 serving as the source electrode) can be measured based on the thermoelectromotive force generated by the temperature difference between the first electrode 212 (the source electrode) serving as the temperature measurement junction and the first signal terminal 46C (the second signal terminal 47C) and the first signal terminal 46D (the second signal terminal 47D) serving as the reference junction. This allows the semiconductor device A14 to accurately measure the temperature of the semiconductor element 21.

[0117] In the semiconductor device A14, the first signal terminal 46C (second signal terminal 47C) has a portion containing a first metal as a constituent material. The first signal terminal 46D (second signal terminal 47D) has a portion containing a second metal as a constituent material. This configuration makes it possible to detect thermoelectromotive forces generated by the temperature difference between the first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D). Therefore, the semiconductor device A14 can improve the accuracy of temperature measurement of the semiconductor element 21.

[0118] The first wire 43 is directly bonded to the extending portion 457 of the first signal terminal 46C (second signal terminal 47C). With this configuration, the entire path from the end (temperature measurement junction) of the first wire 43 bonded to the first electrode 212 to the upper end (reference junction) of the rod-shaped portion 456 is primarily composed of the first metal. This allows for more accurate detection of the thermoelectromotive force generated by the temperature difference between the temperature measurement junction and the reference junction. This is advantageous in terms of improving the accuracy of the measured temperature of the semiconductor element 21. Additionally, the semiconductor device A14 achieves the same effects as the semiconductor device A1 within the same configuration as the semiconductor device A1 of the above embodiment.

[0119] Next, an example of use of the semiconductor device A1 will be described with reference to FIGS.

[0120] Figures 33 to 35 show a semiconductor module B1 configured with the semiconductor device A1 of the above embodiment. Figure 33 is a perspective view showing the semiconductor module B1. Figure 34 is a plan view showing the semiconductor module B1. Figure 35 is a cross-sectional view taken along line XXXV-XXXV in Figure 34. The semiconductor module B1 includes the semiconductor device A1, a wiring substrate 80, a thermistor 81, and a heat sink 90.

[0121] 35 , the heat sink 90 is disposed opposite the bottom surface 1130 of the semiconductor device A1 (support substrate 11). The heat sink 90 is bonded to the bottom surface 1130 via a bonding layer (not shown). The material of the heat sink 90 is not particularly limited, and may be, for example, Al (aluminum), Cu (copper), or an alloy thereof.

[0122] The wiring board 80 is disposed on the z1 side in the thickness direction z with respect to the support board 11. Although detailed illustration is omitted, the wiring board 80 is disposed at a certain distance from the heat sink 90. ​​The wiring board 80 is provided with, for example, a drive circuit that controls the drive of each semiconductor element 21 of the semiconductor device A1.

[0123] The wiring substrate 80 has a first surface 801 and a second surface 802. The first surface 801 is located at the upper side (z1 side) of the wiring substrate 80 in the thickness direction z and faces the z1 side in the thickness direction z. The second surface 802 is located at the lower side (z2 side) of the wiring substrate 80 in the thickness direction z and faces the z2 side in the thickness direction z. The wiring substrate 80 is provided with a plurality of through holes 803 that penetrate in the thickness direction z.

[0124] The metal pins 452 of the signal terminals 45 of the semiconductor device A1 are inserted into corresponding ones of the plurality of through holes 803 of the wiring substrate 80. All of the metal pins 452 of the signal terminals 45 of the semiconductor device A1 are inserted into the through holes 803 of the wiring substrate 80.

[0125] The thermistor 81 is mounted on the first surface 801 of the wiring substrate 80. The thermistor 81 is disposed adjacent to at least one of the first metal pin 4521 of the first signal terminal 46C (second signal terminal 47C) and the second metal pin 4522 of the first signal terminal 46D (second signal terminal 47D). The thermistor 81 is a temperature detection sensor for at least one of the first metal pin 4521 and the second metal pin 4522 adjacent to the thermistor 81. In the illustrated example, two thermistors 81 are mounted on the wiring substrate 80. One thermistor 81 is disposed adjacent to the second metal pin 4522 of the first signal terminal 46D. The other thermistor 81 is disposed adjacent to the second metal pin 4522 of the second signal terminal 47D.

[0126] In the semiconductor module B1, the temperature of the upper end of the second metal pin 4522 of the first signal terminal 46D (second signal terminal 47D), which serves as the reference junction of the thermocouple, can be detected. The temperature of the semiconductor element 21 (first electrode 212, which serves as the source electrode) can be measured based on the thermoelectromotive force generated by the temperature difference between the first electrode 212 (source electrode), which serves as the temperature measurement junction, and the first signal terminal 46C (second signal terminal 47C) and the first signal terminal 46D (second signal terminal 47D), which serve as the reference junction.

[0127] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0128] In the above embodiment and each modified example, among the plurality of signal terminals 45, the plurality of first signal terminals 46A to 46D are located closer to the x1 side in the first direction x, where the first power terminal 14 and the second power terminal 15 are arranged, and the other plurality of second signal terminals 47A to 47D are located closer to the x2 side in the first direction x, where the third power terminal 16 is arranged. However, the present disclosure is not limited to this. For example, all of the plurality of signal terminals 45 may be located closer to the x1 side in the first direction x, where the first power terminal 14 and the second power terminal 15 are arranged, or all of the plurality of signal terminals 45 may be located closer to the x2 side in the first direction x, where the third power terminal 16 is arranged.

[0129] In the above embodiment and each modified example, the plurality of signal terminals 45 (including the first signal terminal 46C and the second signal terminal 47C as the first terminals and the first signal terminal 46D and the second signal terminal 47D as the second terminals) are supported by terminal supporters 48 arranged on the support substrate 11. However, the plurality of signal terminals 45 (including the first signal terminal 46C and the second signal terminal 47C as the first terminals and the first signal terminal 46D and the second signal terminal 47D as the second terminals) may be directly supported by the support substrate 11. The specific configuration of the plurality of signal terminals 45 (including the first signal terminal 46C and the second signal terminal 47C as the first terminals and the first signal terminal 46D and the second signal terminal 47D as the second terminals) can also be modified in various ways. The plurality of signal terminals 45 (including the first signal terminal 46C and the second signal terminal 47C as the first terminals and the first signal terminal 46D and the second signal terminal 47D as the second terminals) may be configured to protrude in the second direction y from resin side surfaces 533, 534, etc. of the sealing resin 50 and bend in an L-shape to extend upward (toward the z1 side in the thickness direction z).

[0130] The present disclosure includes configurations related to the following supplementary notes. Supplementary note 1. A semiconductor device (A1, A11 to A14) comprising: a semiconductor element (21); a first wire (43) mainly composed of a first metal and connected to the semiconductor element (21); a second wire (44) mainly composed of a second metal having a thermoelectric power different from that of the first metal, connected to the semiconductor element (21) and conducting with the first wire (43); first terminals (46C, 47C) electrically connected to the first wire (43); and second terminals (46D, 47D) electrically connected to the second wire (44), wherein the first terminals (46C, 47C) have portions containing the first metal, and the second terminals (46D, 47D) have portions containing the second metal. Supplementary note 2. The semiconductor device (A1, A11 to A14) according to Appendix 1 further includes a support substrate (11) having a main surface (1120) facing one side (z1 side) in a thickness direction (z), wherein the semiconductor element (21), the first terminals (46C, 47C), and the second terminals (46D, 47D) are disposed on the main surface (1120). Appendix 3. The semiconductor device (A1, A11 to A14) according to Appendix 2 further includes a terminal support (48) interposed between the support substrate (11) and the first terminals (46C, 47C) and the second terminals (46D, 47D) in the thickness direction (z), wherein the first terminals (46C, 47C) and the second terminals (46D, 47D) are supported by the terminal support (48). Appendix 4. The semiconductor device (A1, A11 to A13) according to Supplementary Note 2 or 3, wherein the first terminal (46C, 47C) includes a first holder (4511) having conductivity and a first metal pin (4521) inserted into the first holder (4511), and the second terminal (46D, 47D) includes a second holder (4512) having conductivity and a second metal pin (4522) inserted into the second holder (4512).Supplementary Note 5. The semiconductor device (A1, A11 to A13) according to Supplementary Note 4, wherein the first metal pin (4521) is mainly composed of the first metal.Supplementary Note 6. The semiconductor device (A1, A11 to A13) according to Supplementary Note 4 or 5, wherein the first holder (4511) is mainly composed of the first metal.Supplementary Note 7. The semiconductor device (A1, A11 to A13) according to Supplementary Note 6, wherein the first wire (43) is directly bonded to the first holder. Supplementary Note 8. The semiconductor device (A1, A11) according to Supplementary Note 7, wherein the first holder (4511) has a cylindrical portion (453) extending in the thickness direction (z) and a first flange portion (454) connected to an end portion of the cylindrical portion (453) on the other side (z2 side) in the thickness direction (z) and extending in the circumferential direction of the cylindrical portion (453) as viewed in the thickness direction (z), and the first wire (43) is directly bonded to the first flange portion (454). Supplementary Note 9. The semiconductor device (A11) according to Appendix 8, wherein the first flange portion (454) has a first extending portion (454a) partially extending in a direction perpendicular to the thickness direction (z), and the first wire (43) is directly joined to the first extending portion (454a). Appendix 10. The semiconductor device (A1, A11 to A14) according to any one of Appendixes 2 to 9, further comprising a sealing resin (50) having a resin main surface (51) facing one side (z1 side) in the thickness direction (z) and covering the semiconductor element (21), the first wire (43), and the second wire (44), and wherein the first terminals (46C, 47C) and the second terminals (46D, 47D) protrude beyond the resin main surface (51) to one side (z1 side) in the thickness direction (z). Appendix 11. The semiconductor device (A13) according to Supplementary Note 3, wherein the terminal support (48) is located on one side (z1 side) in the thickness direction (z) and has a surface-side metal layer (484) mainly composed of the first metal, and the first wire (43) is directly bonded to the surface-side metal layer (484).Supplementary Note 12. The semiconductor device (A1, A11 to A14) according to any one of Supplements 1 to 11, wherein the second terminal (46D, 47D) is mainly composed of the second metal.Supplementary Note 13. The semiconductor device (A1, A11 to A14) according to any one of Supplements 2 to 11, wherein the semiconductor element (21) has an element main surface (2101) facing one side (z1 side) in the thickness direction (z) and a first electrode (212) arranged on the (2101) element main surface, and the first wire (43) and the second wire (44) are bonded to the first electrode (212).Appendix 14. The semiconductor device (A1, A11 to A14) according to Appendix 13, wherein the semiconductor element (21) is a switching element having a drain electrode, a gate electrode, and a source electrode, and the first electrode (212) is the source electrode. Appendix 15. The semiconductor device (A1, A11 to A14) according to Appendix 14, wherein in the first electrode (212), the first wire (43) and the second wire (44) are joined to each other while overlapping each other. Appendix 16. The semiconductor device (A1, A11 to A14) according to any one of Appendixes 1 to 15, wherein the first metal is constantan, and the second metal is Cu. Appendix 17. A semiconductor module (B1) comprising: the semiconductor device (A11) described in Appendix 4; a wiring board (80) arranged on one side (z1 side) of the support substrate (11) in the thickness direction (z); and a thermistor (81) mounted on the wiring board (80), wherein the wiring board (80) has a plurality of through holes (803) penetrating in the thickness direction (z), the first metal pin (4521) and the second metal pin (4522) are inserted into any of the plurality of through holes (803), and the thermistor (81) is arranged adjacent to at least one of the first metal pin (4521) and the second metal pin (4522).

[0131] A1, A11, A12, A13, A14: semiconductor device B1: semiconductor module 11: supporting substrate 111: insulating layer 112: supporting conductor portion 1120: main surface 1121: first conductive portion 1122: second conductive portion 113: back surface metal layer 1130: bottom surface 13: power terminal 14: first power terminal 15: second power terminal 16: third power terminal 21: semiconductor element 21A: first element (semiconductor element) 21B: second element (semiconductor element) 2101: element main surface 2102: element back surface 211: second electrode (drain electrode) 212: first electrode (source electrode) 213: third electrode (gate electrode) 214: fourth electrode 23: conductive bonding layer 31: first conductive member 310: through hole 311: main body portion 312: First bonding portion 313: Second bonding portion 32: Second conductive member 321: Main body portion 322: Third bonding portion 324: Fourth bonding portion 326: Intermediate portion 327: Horizontal beam portion 328: Hanging portion 33: First conductive bonding layer 34: Second conductive bonding layer 35: Third conductive bonding layer 36: Fourth conductive bonding layer 40, 41, 42: Wire 43: First wire 44: Second wire 45: Signal terminal 451: Holder 4511: First holder 4512: Second holder 452: Metal pin 4521: First metal pin 4522: Second metal pin 453: Cylindrical portion 454: First flange portion 454a: First extension portion 455: Second flange portion 456: Rod-shaped portion 457: Extension portion 459: Conductive bonding layer 46A, 46B: First signal terminal 46C: First signal terminal (first terminal) 46D: First signal terminal (second terminal) 47A, 47B: Second signal terminal 47C: Second signal terminal (first terminal) 47D: Second signal terminal (second terminal) 48: Terminal support 48A: First support portion 48B: Second support portion 481: Insulating layer 482: Metal layer 482A: First portion 482B: Second portion 482C: Third portion 482D: Fourth portion 482E: Fifth portion 483: Metal layer 484: Surface-side metal layer 49: Bonding layer 50: Sealing resin 51: Main resin surface 511, 512, 513: Recesses 52: Back resin surface 531, 532, 533,534: Resin side surface 531a: Recessed portion 80: Wiring substrate 801: First surface 802: Second surface 803: Through hole 81: Thermistor 90: Heat sink

Claims

1. A semiconductor device comprising: a semiconductor element; a first wire connected to the semiconductor element and composed primarily of a first metal; a second wire connected to the semiconductor element and conducting with the first wire and composed primarily of a second metal having a thermoelectric power different from that of the first metal; a first terminal electrically connected to the first wire; and a second terminal electrically connected to the second wire, wherein the first terminal has a portion containing the first metal, and the second terminal has a portion containing the second metal.

2. The semiconductor device according to claim 1, further comprising a support substrate having a main surface facing one side in the thickness direction, wherein the semiconductor element, the first terminal, and the second terminal are disposed on the main surface.

3. The semiconductor device according to claim 2, further comprising a terminal support interposed between the support substrate and the first terminal and the second terminal in the thickness direction, the first terminal and the second terminal being supported by the terminal support.

4. A semiconductor device as described in claim 2 or 3, wherein the first terminal includes a first holder having conductivity and a first metal pin inserted into the first holder, and the second terminal includes a second holder having conductivity and a second metal pin inserted into the second holder.

5. The semiconductor device according to claim 4, wherein the first metal pin is mainly composed of the first metal.

6. The semiconductor device according to claim 4 or 5, wherein the first holder is mainly composed of the first metal.

7. The semiconductor device according to claim 6, wherein the first wire is directly bonded to the first holder.

8. The semiconductor device described in claim 7, wherein the first holder has a cylindrical portion extending in the thickness direction, and a first flange portion connected to the other end of the cylindrical portion in the thickness direction and extending circumferentially of the cylindrical portion when viewed in the thickness direction, and the first wire is directly joined to the first flange portion.

9. The semiconductor device according to claim 8, wherein the first flange portion has a first extension portion that partially extends in a direction perpendicular to the thickness direction, and the first wire is directly bonded to the first extension portion.

10. A semiconductor device as described in any one of claims 2 to 9, further comprising a sealing resin having a resin main surface facing one side in the thickness direction and covering the semiconductor element, the first wire, and the second wire, wherein the first terminal and the second terminal protrude beyond the resin main surface to one side in the thickness direction.

11. The semiconductor device according to claim 3, wherein the terminal support has a surface-side metal layer located on one side in the thickness direction and containing the first metal as a main component, and the first wire is directly bonded to the surface-side metal layer.

12. The semiconductor device according to any one of claims 1 to 11, wherein the second terminal is mainly composed of the second metal.

13. A semiconductor device according to any one of claims 2 to 11, wherein the semiconductor element has a main surface facing one side in the thickness direction and a first electrode disposed on the main surface, and the first wire and the second wire are bonded to the first electrode.

14. The semiconductor device according to claim 13, wherein the semiconductor element is a switching element having a drain electrode, a gate electrode, and a source electrode, and the first electrode is the source electrode.

15. The semiconductor device according to claim 14, wherein the first wire and the second wire in the first electrode are joined together while overlapping each other.

16. A semiconductor device according to any one of claims 1 to 15, wherein the first metal is constantan, and the second metal is Cu.

17. A semiconductor module comprising the semiconductor device of claim 4, a wiring board arranged on one side of the support substrate in the thickness direction, and a thermistor mounted on the wiring board, wherein the wiring board has a plurality of through holes penetrating in the thickness direction, the first metal pin and the second metal pin are inserted into any of the plurality of through holes, and the thermistor is arranged adjacent to at least one of the first metal pin and the second metal pin.

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