MEMS microphone

Abstract

A MEMS microphone according to an embodiment of the present invention comprises: a substrate; a MEMS structure disposed on the substrate; a signal processing element which is disposed on the substrate and processes a signal of the MEMS structure; and a passive element unit disposed inside the signal processing element and electrically connected to a power supply unit of the signal processing element.

Description

MEMS Microphone

[0001] The present invention relates to a MEMS microphone, and more specifically, to a MEMS microphone having an RF noise stabilization structure.

[0002] Typically, audio devices use electrodes to vibrate a diaphragm to generate sound. Recent technological advancements have led to significant advancements in the audio device field. These devices are increasingly used in diverse applications, including portable terminals and hearing aids. As the devices they are used in become slimmer, the devices themselves are also becoming smaller.

[0003] Additionally, microphones utilizing MEMS (Micro Electro Mechanical Systems), a semiconductor technology, have recently been developed and used. MEMS is a technology that enables the manufacturing of tiny mechanical components on the surface of silicon wafers. These MEMS microphones can be categorized into electrostatic and piezoelectric types, including the common condenser type.

[0004] MEMS microphones are used in environments such as wireless earphones (TWS, True Wireless Stereo) and smartphones, and are susceptible to RF noise both internal and external to the device. RF noise enters the ASIC's power line and degrades the performance of the MEMS microphone. A structure is needed to mitigate the effects of this RF noise.

[0005] The technical problem to be solved by the present invention is to provide a MEMS microphone having an RF noise stabilization structure.

[0006] In order to solve the above technical problem, a MEMS microphone according to one embodiment of the present invention includes: a substrate; a MEMS structure disposed on the substrate; a signal processing element disposed on the substrate and processing a signal of the MEMS structure; and a passive element portion disposed inside the signal processing element and electrically connected to a power supply unit of the signal processing element.

[0007] Additionally, the passive component may include a variable capacitor.

[0008] Additionally, the passive component may include a plurality of capacitors connected in parallel; and a plurality of switches each connected in series with the plurality of capacitors.

[0009] Additionally, the signal processing element can turn each of the plurality of switches on and off in response to the frequency of RF noise applied to the signal processing element.

[0010] Additionally, the passive component portion may include at least one of a MIM (Metal-Insulator-Metal) capacitor, a MOM (Metal-Oxide-Metal) capacitor, and a deep trench capacitor.

[0011] In addition, the power supply unit of the signal processing element can be electrically connected to an external power input unit into which external power is input through the substrate.

[0012] In addition, the second passive component part is disposed on the substrate and electrically connected to the external power input part, and the passive component part disposed inside the signal processing element and the second passive component part may have different capacities.

[0013] Additionally, the passive component portion disposed within the signal processing component may have a capacitance value of 10 to 1000 pF, and the second passive component portion may have a capacitance value of 100 nF to 10 uF.

[0014] In addition, a third passive component part is disposed inside the substrate and electrically connected to the external power input part, and the passive component part disposed inside the signal processing element and the third passive component part may have different capacities.

[0015] In addition, the power supply unit of the signal processing element may include a plurality of power supply units, and the passive component unit may include a plurality of passive component units electrically connected to each of the plurality of power supply units.

[0016] Additionally, the passive component part can be connected to the front end of the bandgap reference voltage generation part of the signal processing component.

[0017] Additionally, the passive component unit can be connected between the power supply unit of the signal processing element and the bandgap reference voltage generation unit of the signal processing element.

[0018] According to embodiments of the present invention, an RF noise stabilization structure can be implemented within an ASIC. By utilizing a common substrate, process freedom can be increased. Furthermore, multiple capacitors can be mounted, enabling multiple noise removal functions.

[0019] FIG. 1 is a block diagram of a MEMS microphone according to one embodiment of the present invention.

[0020] FIG. 2 illustrates an implementation example of a MEMS microphone according to an embodiment of the present invention.

[0021] FIGS. 3 to 13 are drawings for explaining a MEMS microphone according to an embodiment of the present invention.

[0022] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the attached drawings.

[0023] However, the technical idea of ​​the present invention is not limited to some of the embodiments described, but can be implemented in various different forms, and within the scope of the technical idea of ​​the present invention, one or more of the components between the embodiments can be selectively combined or substituted for use.

[0024] In addition, terms (including technical and scientific terms) used in the embodiments of the present invention may be interpreted as having a meaning that can be generally understood by a person of ordinary skill in the technical field to which the present invention belongs, unless explicitly and specifically defined and described, and terms that are commonly used, such as terms defined in a dictionary, may be interpreted in consideration of the contextual meaning of the relevant technology.

[0025] Additionally, the terms used in the embodiments of the present invention are intended to describe the embodiments and are not intended to limit the present invention.

[0026] In this specification, the singular may also include the plural unless specifically stated otherwise in the phrase, and when it is described as “A and / or at least one (or more) of B, C”, it may include one or more of all combinations that can be combined with A, B, C.

[0027] Additionally, in describing components of embodiments of the present invention, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only intended to distinguish the components from other components, and are not intended to limit the nature, order, or sequence of the components.

[0028] And, when a component is described as being 'connected', 'coupled', or 'connected' to another component, it may include not only cases where the component is 'connected', 'coupled', or 'connected' directly to the other component, but also cases where the component is 'connected', 'coupled', or 'connected' by another component between the component and the other component.

[0029] Additionally, when described as being formed or arranged "above" or "below" each component, "above" or "below" includes not only cases where the two components are in direct contact with each other, but also cases where one or more other components are formed or arranged between the two components. Furthermore, when expressed as "above" or "below," the meaning may include not only the upward direction but also the downward direction based on one component.

[0030] A variation according to the present embodiment may include some components of each embodiment and some components of other embodiments. That is, a variation may include one embodiment among various embodiments, but may omit some components and include some components of the corresponding other embodiment. Or, the opposite may be true. The features, structures, effects, etc. to be described in the embodiments are included in at least one embodiment, and are not necessarily limited to just one embodiment. Furthermore, the features, structures, effects, etc. exemplified in each embodiment can be combined or modified in other embodiments by a person having ordinary skill in the art to which the embodiments belong. Therefore, the contents related to such combinations and modifications should be interpreted as being included within the scope of the embodiments.

[0031] Fig. 1 is a block diagram of a MEMS microphone according to an embodiment of the present invention. Fig. 2 illustrates an implementation example of a MEMS microphone according to an embodiment of the present invention, and Figs. 3 to 13 are drawings for explaining a MEMS microphone according to an embodiment of the present invention.

[0032] A MEMS microphone (100) according to an embodiment of the present invention is composed of a substrate (110), a signal processing element (120), a passive element section (121), and a MEMS structure (130), and may include a second passive element section (111) and a third passive element section (112).

[0033] The substrate (110) is placed at the bottom of the MEMS microphone (100) and has a plate shape. The substrate (110) may be a printed circuit board (PCB), and may include a flexible printed circuit board (FPCB) or a chip on film (COF) substrate. A COF (Chip on Film) substrate is a substrate formed by forming a circuit or mounting a chip or other element on a base film, and has a film shape, so it is a substrate that is considerably thinner than other substrates. By using a COF substrate as the substrate of the MEMS microphone, the thickness can be considerably reduced. The substrate (110) is a COF substrate and may be a two-metal COF substrate. A two-metal COF is a substrate formed by forming a circuit or mounting an element on both sides of a base film. By including a via hole in the base film, circuits or elements formed on both sides can be connected. Here, the via hole may be a micro via hole and may be configured with a size of 25 um or less. Compared to single-sided COF, it can increase integration, improve packaging freedom, and enable fine pitch by placing circuits or components on both sides. While fine pitch is not easily achieved when using only rigid substrates, COF substrates enable fine pitch, reducing the size of the MEMS microphone package by more than 50%.

[0034] When including a COF substrate, a rigid substrate laminated on the COF substrate may be further included. The rigid substrate may be a metal plate, SUS, or a reinforcing plate. SUS is a high-strength steel grade that mixes chromium with iron to enhance corrosion resistance. In addition, various reinforcing plates made of metal materials may be used. In addition, another type of rigid substrate that can be combined with the housing to maintain the shield may be included.

[0035] A flexible printed circuit board (FPCB) is a flexible circuit board. It is also flexible and thinner than standard printed circuit boards. Therefore, using a flexible printed circuit board as the substrate for a MEMS microphone can significantly reduce its thickness. Other types of flexible substrates may also be included.

[0036] A housing (140) forming an internal space may be placed on the upper portion of the substrate (110). As shown in FIG. 2, the housing (140) may be placed on the upper portion of the MEMS microphone and may have a cover shape covering the substrate (110). The housing (140) may be a can type made of a metal material, and may be formed of various materials such as plastic. The housing (140) may be combined with the substrate (110). At this time, the housing (140) and the substrate (110) may be joined by welding. The area where the housing (140) and the substrate (110) are joined may be joined by micro-welding. By joining the housing (140) and the substrate (110) by micro-welding, the process of applying and curing can solder or epoxy is unnecessary, and the can solder line or epoxy application area is also unnecessary, so the size can be reduced by the corresponding area.

[0037] A signal processing element (120) and a MEMS structure (130) may be arranged on a substrate (110). The MEMS structure (130) may be arranged in an internal space formed by the substrate (110) and the housing (140), as shown in FIG. 2. The MEMS structure (130) includes a body, a back plate, and a vibration plate. A hole may be formed in the substrate (110) at a position facing the lower portion of the MEMS structure (130). The cross-sectional area of ​​the hole formed in the substrate (110) may be circular, but is not limited thereto. Here, the hole may be an acoustic hole. The hole may also be formed in an area of ​​the housing (140) facing the upper portion of the MEMS structure (130).

[0038] When a hole is formed in the substrate (110) or the housing (140), and the diaphragm vibrates due to sound pressure from the outside flowing in through the hole, the capacitance at the back plate can be measured to sense the sound signal. In Fig. 2, the back plate is depicted as being positioned above the diaphragm, but it is understood that the diaphragm may also be positioned above the back plate.

[0039] A signal sensed by the MEMS structure (130) is transmitted to the signal processing element (120). The MEMS structure (130) and the signal processing element (120) can be electrically connected. At this time, the MEMS structure (130) and the signal processing element (120) are connected by a wire through wire bonding, and the signal sensed by the MEMS structure (130) can be transmitted to the signal processing element (120) through the wire.

[0040] The signal processing element (120) can process an electrical signal sensed and transmitted by the MEMS structure (130). The signal processing element (120) can amplify a signal sensed by the MEMS structure (130). Here, the signal processing element (120) may include an application-specific integrated circuit (ASIC), but is not limited thereto. The signal processing element (120) may be formed as a single module and may be formed in a chip form. The signal processing element (120) may include an ASIC and an En-cap that coats the ASIC.

[0041] The signal processing element (120) may be placed on the substrate (110). At this time, the signal processing element (120) may be placed on the substrate (110) spaced apart from the MEMS structure (130). The signal processing element (120) may be placed together with the MEMS structure (130) in the internal space formed by the substrate (110) and the housing (140), and may receive signals from the MEMS structure (130). Since signals are transmitted between the MEMS structure (130) and the signal processing element (120) in the internal space covered by the housing (140), noise can be reduced.

[0042] The signal processing element (120) can be connected to the substrate (110) and supplied with power. The power supply unit (122) of the signal processing element (120) can receive power through the substrate (110). The signal processing element (120) is driven by the input power and can supply bias power to the MEMS structure (130). The signal processing element (120) can be connected to the substrate (110) by wire bonding, or can be bonded to the substrate (110) by forming a flip-chip BGA using a flip-chip method, or can be electrically connected to the wire pad of the substrate (110) using a BGA method.

[0043] The passive component unit (121) is arranged inside the signal processing component (120) and is electrically connected to the power supply unit (122) of the signal processing component (120). When the signal processing component (120) receives power, RF noise may be input along the power line, which may deteriorate the signal processing performance. As shown in Fig. 3, the passive component unit (121) is arranged inside the signal processing component (120) and is connected to the power supply unit (122), so as to reduce RF noise applied to the power supply unit (122). Here, the passive component unit (121) may include a capacitor. The capacitor may store current including RF noise applied through the power supply unit (122), thereby reducing RF noise, and may allow a signal with reduced RF noise to be applied to the signal processing component (120).

[0044] The passive component section (121) includes a capacitor, so that the signal-to-noise ratio (SNR) is improved, and the power supply rejection ratio (PSRR) and power supply rejection ratio (PSR) noise can also be improved. Here, PSRR represents the signal ratio at the output terminal of noise (sine wave) applied to the power supply, and can identify the influence of power supply noise by frequency. PSR means the degree of suppression at the output terminal of pulse noise induced in the power supply when using a communication circuit of a TDMA (Time Division Multiple Access) digital modulation method such as GSM (Global System for Mobile Communications). That is, noise-related performance such as SNR, PSRR, and PSR can be improved through the capacitor (150). In addition, noise that may occur when processing a signal in the signal processing component (120) can be removed.

[0045] Capacitors for power stabilization and RF (Radio Frequency) noise reduction can be mounted on the external PCB substrate of the MEMS microphone. In the case of true wireless earphones (TWS), the capacitors can be implemented inside the MEMS microphone due to external PCB mounting space constraints caused by miniaturization. In this case, a bypass capacitor can be implemented by layering an embedded capacitance material (ECM) on the inside of the MEMS microphone substrate. In the case of an ECM substrate, the special process may increase the difficulty of the substrate and the unit price.

[0046] The passive component (121) according to an embodiment of the present invention is placed inside the signal processing component (120) rather than the substrate (110), so that capacitance for reducing RF noise can be implemented.

[0047] The passive component (121) may include a variable capacitor. The passive component (121) includes a capacitor, and the capacity of the capacitor varies depending on the frequency of the RF signal to be reduced, so that a wide range of RF noise can be reduced by including a variable capacitor.

[0048] The passive component unit (121) may include a plurality of capacitors and a plurality of switches. The plurality of capacitors may be connected in parallel, and each of the plurality of switches may be connected in series with each of the plurality of capacitors. The number of capacitors connected varies depending on whether each switch is turned on or off, and thus the capacity of the capacitors may be varied. The number of capacitors connected may be set based on the frequency of RF noise applied to the MEMS microphone (100) to which the signal processing component (120) is applied or the signal processing component (120). Each of the plurality of switches may be turned on or off in response to the frequency of RF noise applied to the signal processing component (120). Alternatively, the number of capacitors turned on and off by the processor may be changed.

[0049] The multiple capacitors may have the same capacitance. Alternatively, at least one of the multiple capacitors may have a different capacitance from the others. This allows for implementing capacitor capacitances of various sizes depending on the RF noise frequency band to be removed.

[0050] The capacitor of the passive component part (121) may include at least one of a MIM (Metal-Insulator-Metal) capacitor, a MOM (Metal-Oxide-Metal) capacitor, and a deep trench capacitor. The MIM (Metal-Insulator-Metal) capacitor has a metal-insulator-metal structure, and is a structure in which two metal upper and lower electrodes are formed with an insulator positioned between them. At this time, the electrodes are composed of multiple layers, and a metal-insulator-metal structure can be formed for each of the multiple layers. The MOM (Metal-Oxide-Metal) capacitor has a rapid-oxide layer-metal structure, and is a structure in which two metal upper and lower electrodes are formed with an oxide (e.g., SiO2) positioned between them to act as an insulator. A deep trench capacitor is a capacitor made by digging a deep groove in a substrate, and the capacitor can be implemented through the electrodes created by the deep groove. The passive component part (121) may include capacitors having various types and shapes in addition to the above. In addition, it may include components that can reduce RF noise.

[0051] When the configuration for RF reduction is implemented as a passive component (121) placed inside the signal processing element (120) rather than on the substrate (110), the area of ​​the signal processing element (120) may increase, but the degree of design freedom may be increased compared to the case where it is placed on the substrate (110) or built into the substrate (110). When the capacitor for reducing RF noise is placed on the substrate (110), it may be difficult to secure sufficient internal space in the housing (140). The internal space of the housing (140) affects the acoustic performance of the MEMS structure, and thus the performance may deteriorate due to insufficient internal space. When the capacitor for reducing RF noise is built into the substrate (110), the cost of manufacturing the substrate (110) increases, and there is a restriction that an ECM substrate must be used, which may reduce the degree of process freedom.

[0052] When the configuration for RF reduction is implemented with a passive component (121) placed inside the signal processing element (120) instead of the substrate (110), as shown in FIG. 4, the RF reduction effect can be implemented with only a slight increase in the area of ​​the signal processing element (120), so that sufficient space inside the housing (140) can be secured, and a general substrate can be used, thereby improving the degree of process freedom. For example, when a capacitance of 100 pF is applied and a capacitance per unit area of ​​1 fF / um^2 is used as the standard, the size of the signal processing element (120) when the passive component (121) is not placed inside can increase from 1.0 mm (A) x 1.3 mm (B) to 1.0 mm (A) x 1.4 mm (B') when the passive component (121) is placed inside.

[0053] The passive component (121) can be connected to the rear end of the power supply unit (122) of the signal processing component (120). As shown in Fig. 3, it is directly connected to the rear end of the power supply unit (122) to reduce RF noise applied through the power supply unit (122).

[0054] In addition, the passive component unit (121) may be connected to the front end of the bandgap reference voltage generation unit (123) of the signal processing component (120). The passive component unit (121) may be connected between the power supply unit (122) of the signal processing component (120) and the bandgap reference voltage generation unit (123) of the signal processing component (120). The signal processing component (120) may include a bandgap reference voltage generation unit (123) that generates a reference voltage that serves as a reference for signal processing. The reference voltage may be provided as a bias voltage to the MEMS structure (130). The bandgap reference voltage generation unit (123) generates a reference voltage using the power supplied to the power supply unit (122). At this time, in order to generate a stable and accurate reference voltage, the passive component unit (121) is connected to the terminal immediately preceding the bandgap reference voltage generation unit (123), as shown in FIG. 5, to prevent RF noise from being supplied to the bandgap reference voltage generation unit (123).

[0055] The passive component unit (121) is connected between the power supply unit (122) of the signal processing component (120) and the bandgap reference voltage generation unit (123) of the signal processing component (120), and may be connected to the rear end of the filter (124) connected to the rear end of the power supply unit (122). The filter (124) may include various filters such as a stabilization filter. The passive component unit (121) may be connected between the filter (124) connected to the rear end of the power supply unit (122) and the bandgap reference voltage generation unit (123), as shown in FIG. 6. In addition, the passive component unit (121) may be placed in various positions so that RF noise does not affect signal processing.

[0056] As described above, the passive component unit (121) can be implemented as a variable capacitor, as shown in FIG. 7. At this time, in implementing the variable capacitor, the passive component unit (121) can include a plurality of capacitors connected in parallel and a plurality of switches connected in series with each capacitor, as shown in FIG. 8. The passive component unit (121) can be implemented as a plurality of capacitors and a plurality of switches between the power supply unit (122), VDD, and the bandgap reference voltage generation unit (123), BGR. A signal from which RF noise has been removed can be applied to the bandgap reference voltage generation unit (123), and can be provided as a bias voltage to the MEMS structure (130) through a charge pump, and a stable power can be generated through an LDO (low-dropout) voltage regulator.

[0057] The power supply unit (122) of the signal processing element (120) may include a plurality of power supply units (122-1, 122-2). It may receive a plurality of power supplies rather than a single power supply, such as power supplied from a battery other than an external power supply. At this time, since each input power supply may include RF noise, the passive element unit (121) may include a plurality of passive element units (121-1, 121-2) electrically connected to each of the plurality of power supply units (122-1, 122-2). At this time, since the RF noise frequency of each of the plurality of power supply units (122-1, 122-2) may be different, the capacitance value of the passive element units (121-1, 121-2) connected to each may be set differently depending on the RF noise of the corresponding power supply unit.

[0058] The power supply unit (122) of the signal processing element (120) can be electrically connected to an external power input unit into which external power is input and the substrate (110). The MEMS microphone (100) according to the embodiment of the present invention can be connected to an external power source, and the power supply unit (122) of the signal processing element (120) can be electrically connected to an external power input unit into which external power is input and the substrate (110) to receive power.

[0059] In addition to the passive component unit (121) disposed inside the signal processing element (120), a second passive component unit (111) disposed on the substrate (110) and electrically connected to the external power input unit may be included. As shown in FIGS. 10 and 11, the second passive component unit (111) may be included on the substrate (110). Here, the passive component unit (121) disposed inside the signal processing element (120) and the second passive component unit (111) may have different capacities. The first passive component unit and the second passive component unit (111), which are the passive component units (121) disposed inside the signal processing element (120), may have different frequency bands of RF noise to be reduced. For example, when receiving signals having two different bandwidths, the first passive component unit and the second passive component unit (111) may reduce RF noise of each signal having a different bandwidth. At this time, the second passive component (111) placed on the substrate (110) may include a capacitor having a larger capacity and size than the passive component (121) placed inside the signal processing component (120).

[0060] In addition to the passive component unit (121) disposed inside the signal processing element (120), a third passive component unit (112) disposed inside the substrate (110) and electrically connected to an external power input unit may be included. As shown in FIGS. 12 and 13, a second passive component unit (111) embedded inside the substrate (110) may be included. Here, the passive component unit (121) disposed inside the signal processing element (120) and the third passive component unit (112) may have different capacities. The first passive component unit and the third passive component unit (112), which are the passive component units (121) disposed inside the signal processing element (120), may have different frequency bands of RF noise to be reduced. For example, when receiving signals having two different bandwidths, the first passive component unit and the third passive component unit (112) may reduce RF noise of each signal having a different bandwidth. At this time, the third passive component (112) placed on the substrate (110) may include a capacitor having a larger capacity and size than the passive component (121) placed inside the signal processing component (120).

[0061] In addition, it may include a passive component unit (121) disposed inside the signal processing component (120), a second passive component unit (111) disposed on the substrate (110), and a third passive component unit (112) embedded inside the substrate (110). Each passive component unit may have a different capacity, and the frequency of the noise to be reduced may be different. Alternatively, the same noise may be removed, but the capacity may be distributed.

[0062] RF noise can be applied along with external power supply, and at the same time, noise caused by fluctuations in the power supply itself can be applied. Capacitors for RF noise reduction require relatively low capacitance values, typically tens to hundreds of picofarads (pF). In contrast, capacitors for power stabilization can require high capacitance values, ranging from hundreds of nanofarads (nF) to several microfarads (uF).

[0063] The passive component unit (121) disposed inside the signal processing element (120) may include a capacitor for reducing RF noise, and the second passive component unit (111) or the third passive component unit (112), the second passive component unit (111) and the third passive component unit (112) may include a capacitor for power stabilization. That is, the passive component unit (121) disposed inside the signal processing element (120) may have a capacitance of several tens to several hundreds of pF, and the second passive component unit (111) or the third passive component unit (112), the second passive component unit (111) and the third passive component unit (112) disposed on the substrate (110) may have a capacitance of several hundreds of nF to several uF. For example, the passive component (121) placed inside the signal processing component (120) may have a capacitance value of 10 to 1000 pF, and the second passive component (111) or the third passive component (112) may have a capacitance value of 100 nF to 10 uF.

[0064] As described above, the MEMS microphone (100) according to the embodiment of the present invention can have a passive component (121) for reducing RF noise implemented inside the signal processing component (120). Through this, the degree of design freedom of the MEMS microphone package process can be increased by using a general substrate without the constraint of having difficulty arranging the capacitor on the substrate (110) or the use of a special PCB such as an ECM for embedding the capacitor inside the substrate (110). In addition, the frequency of various RF noises can be reduced by using multiple capacitors, and application to multiple power sources is also possible.

[0065] Those skilled in the art will appreciate that the present invention can be implemented in modified forms without departing from the essential characteristics of the above-described description. Therefore, the disclosed methods should be considered illustrative rather than restrictive. The scope of the present invention is set forth in the claims, not the foregoing description, and all differences within the scope equivalent thereto should be construed as being encompassed by the present invention.

Claims

1. Substrate; A MEMS structure disposed on a substrate; A signal processing element disposed on the substrate and processing a signal of the MEMS structure; and A MEMS microphone including a passive component portion arranged inside the signal processing element and electrically connected to the power supply portion of the signal processing element.

2. In paragraph 1, The above passive component is a MEMS microphone including a variable capacitor.

3. In paragraph 1, The above passive component part, A plurality of capacitors connected in parallel; and A MEMS microphone comprising a plurality of switches each connected in series with a plurality of capacitors.

4. In paragraph 3, The above signal processing element, A MEMS microphone that turns each of the plurality of switches on and off in response to the frequency of RF noise applied to the signal processing element.

5. In paragraph 1, The above passive component part, A MEMS microphone comprising at least one of a MIM (Metal-Insulator-Metal) capacitor, a MOM (Metal-Oxide-Metal) capacitor, and a deep trench capacitor.

6. In paragraph 1, The power supply unit of the above signal processing element is: A MEMS microphone electrically connected to an external power input unit through which external power is input and the above-mentioned board.

7. In paragraph 6, A second passive component part is disposed on the substrate and is electrically connected to the external power input part, A MEMS microphone in which the passive component portion and the second passive component portion disposed inside the signal processing component have different capacities.

8. In paragraph 7, The passive component placed inside the signal processing component has a capacitance value of 10 to 1000 pF, The above second passive component is a MEMS microphone having a capacitance value of 100 nF to 10 uF.

9. In paragraph 6, A third passive component is disposed inside the substrate and is electrically connected to the external power input unit, A MEMS microphone in which the passive component portion and the third passive component portion disposed inside the signal processing component have different capacities.

10. In paragraph 1, The power supply unit of the signal processing element includes a plurality of power supply units, The above passive component part, A MEMS microphone comprising a plurality of passive components electrically connected to each of the plurality of power supply units.

Images