Hybrid switching systems and methods

Abstract

In accordance with various embodiments, a system having a hybrid switch circuit is provided. The hybrid switch circuit includes a silicon-based transistor and a phase-change material (PCM) device that are configured in a parallel circuit arrangement to operate as the hybrid switch circuit. The system also includes a controller electrically coupled to the silicon-based transistor and the PCM device. The controller may be configured to control the silicon-based transistor and the PCM device to regulate a path through the hybrid switch circuit. The hybrid switch circuit may include an input terminal and an output terminal that are coupled to the silicon-based transistor and the PCM device. The controller may include a first bias circuit electrically coupled to, and configured to control, the silicon-based transistor, and a second bias circuit electrically coupled to, and configured to control, the PCM device.

Description

HYBRID SWITCHING SYSTEMS AND METHODSFIELD OF INVENTION

[0001] Embodiments of the present disclosure relate generally to radio frequency (RF) switches and, more particularly, to systems and methods related to hybrid RF switches or devices comprising phase change material devices and silicon-based devices.BACKGROUND

[0002] Radio frequency (RF) switching devices (also referred to herein as RF switches) are ubiquitous in high frequency electronics systems. An RF switch is a device that can route RF signals through one or more transmission paths. A mechanical switch’s “on / off” state is determined by physically changing the switch’s position. RF switches, however, use an electrical input at the gate of the RF transistor to turn “on” or “off’. A positive voltage turns the switch “on”, and a negative voltage turns it “off’. In design schematics, as an example, the “on” state is represented as a resistor and the “off’ state as a capacitor. A figure of merit that can be used to characterize the performance of an RF switch is the product of Ronand Coff, where Ronis a resistance value of the transistor when the switch is turned “on” and Coff is a capacitance value of the transistor when the switch is turned “off’.

[0003] For a typical switch, a low resistance allows more of the signal to travel from one port to another when the switch is on. Ronis thus inversely proportional to the width of the transistor. The wider the transistor the lower the resistance, which allows more of the signal to get through. On the other hand, a low capacitance can stop more of the signal from traveling from one port to another when the switch is off. Thus, Cotr is directly proportional to the width of the transistor. The wider the transistor the higher the capacitance, and the more the signal leaks through the switch when it’s off. It is important that both metrics, Ronand Coff, are as low as possible, as both will affect the performance of the RF switch, and thus smaller values of the product Ronand Coff (i.e. , ROn*Coff) are desired. Thus, there is a continued need to improve RF switch technology for various applications.SUMMARY

[0004] In accordance with various embodiments, the disclosure relates to hybrid radio frequency (RF) switching devices, or simply hybrid RF switches, comprising phase changematerial devices and silicon-based transistors and methods of operating the hybrid RF switches.

[0005] In accordance with one or more embodiments, a system is provided. The system includes a hybrid switch circuit having a silicon-based transistor and a phase-change material (PCM) device in a parallel circuit arrangement with the silicon-based transistor. The silicon- based transistor and the PCM device are configured to operate in the parallel circuit arrangement as the hybrid switch circuit. The system also includes a controller electrically coupled to the silicon-based transistor and the PCM device, the controller configured to control the silicon-based transistor and the PCM device to regulate a path through the hybrid switch circuit. The hybrid switch circuit further includes an input terminal and an output terminal, wherein the silicon-based transistor and the PCM device are both coupled between the input terminal and the output terminal. The controller may include a first bias circuit electrically coupled to, and configured to control, the silicon-based transistor, and a second bias circuit electrically coupled to, and configured to control, the PCM device. The path through the hybrid switch circuit is regulated based on an operating frequency of switching, a level of hot- switching, or a level of electro-static discharge for each of the silicon-based transistor and the PCM device. The hybrid switch circuit may operate as a radio frequency (RF) switching component.

[0006] In accordance with one or more embodiments, the PCM device may include a chalcogenide material, the silicon-based transistor comprises a metal-oxide semiconductor field-effect transistor (MOSFET) fabricated from a silicon-on-insulator (SOI) substrate, or a combination thereof. The hybrid switch circuit has a ROn*COff value lower than that of a stand-alone silicon-based transistor having a same size as the hybrid switch circuit. In one or more embodiments, the hybrid switch circuit has a higher level of hot-switching and a higher level of electro-static discharge tolerance compared to a stand-alone PCM device having a same size as the hybrid switch circuit.

[0007] In accordance with various embodiments, a method for operating a hybrid switching system is provided. The method includes receiving power via an input terminal of a hybrid switch circuit, the hybrid switch circuit comprising a silicon-based transistor and a phase-change material (PCM) device in a parallel circuit arrangement with the silicon-based transistor, wherein the input terminal is electrically coupled to the silicon-based transistor and to the PCM device; receiving a control signal from a controller electrically coupled to the silicon-based transistor and the PCM device; regulating, via the controller using the control signal, a path for the power through the hybrid switch circuit; and outputting the power at anoutput terminal of the hybrid switch circuit based on the regulated path through the hybrid switch circuit, wherein the output terminal is electrically coupled to the silicon-based transistor and to the PCM device. The controller may be configured to regulate the path via the hybrid switch circuit based on an operating frequency of switching, a level of hot- switching, or a level of electro-static discharge for each of the silicon-based transistor and the PCM device. In some embodiments, the controller may include a first bias circuit configured to control the silicon-based transistor and a second bias circuit configured to control the PCM device.

[0008] In accordance with one or more embodiments, the method may further include providing a bias voltage to the first bias circuit to turn on the silicon-based transistor; and outputting the power via the silicon-based transistor. In one or more embodiments, the method may include providing a bias voltage to the second bias circuit to turn on the PCM device; and outputting the power via the PCM device. In one or more embodiments, the hybrid switch circuit may operate as a radio frequency (RF) switching component. In accordance with one or more embodiments, the PCM device comprises a chalcogenide material, the silicon-based transistor comprises a metal-oxide semiconductor field-effect transistor (MOSFET) fabricated from a silicon-on-insulator (SOI) substrate, or a combination thereof. In accordance with one or more embodiments, the hybrid switch circuit has a Ron*Coff value lower than that of a stand-alone silicon-based transistor having a same size as the hybrid switch circuit. In accordance with one or more embodiments, the hybrid switch circuit has a higher level of hot- switching and a higher level of electro-static discharge tolerance compared to a stand-alone PCM device having a same size as the hybrid switch circuit.

[0009] In accordance with various embodiments, a method of fabricating a hybrid switch circuit is provided. The method includes producing a silicon-based transistor from a silicon- on-insulator (SOI) substrate; and producing a phase-change material (PCM) device approximate the silicon-based transistor via a three-dimensional integrated circuit (3D-IC) fabrication process, wherein the PCM device comprises a chalcogenide material. In one or more embodiments, the hybrid switch circuit has a ROn*COff value lower than that of a standalone silicon-based transistor having a same size as the hybrid switch circuit, the hybrid switch circuit has a higher level of hot-switching and a higher level of electro-static discharge tolerance compared to a stand-alone PCM device having a same size as the hybrid switch circuit, or a combination thereof. The hybrid switch circuit may operate as a radio frequency(RF) switching component and is integrated with a host device to perform RF switching functions.

[0010] These and other aspects and implementations are discussed in detail below. The foregoing information and the following detailed description include illustrative examples of various aspects and implementations, and provide an overview or framework for understanding the nature and character of the claimed aspects and implementations. The drawings provide illustration and a further understanding of the various aspects and implementations, and are incorporated in and constitute a part of this specification.BRIEF DESCRIPTION OF THE DRAWINGS

[0011] For a more complete understanding of the principles disclosed herein, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:

[0012] Figure 1 illustrates a system having a hybrid switch circuit, in accordance with various embodiments.

[0013] Figure 2 illustrates a block diagram of a hybrid switching device, in accordance with various embodiments.

[0014] Figure 3 illustrates transitions between two different states of a phase-change material (PCM)-based device, in accordance with various embodiments.

[0015] Figure 4A illustrates a schematic diagram of a hybrid switching device, in accordance with various embodiments.

[0016] Figure 4B illustrates a plot depicting time-dependent voltage performance and timing parameters and another plot depicting power performance aspects of the hybrid switching device described in Figure 4A, in accordance with various embodiments.

[0017] Figure 5 illustrates a method for operating a hybrid switching system, in accordance with various embodiments.

[0018] Figure 6 illustrates a method for fabricating a hybrid switch circuit, in accordance with various embodiments.

[0019] It is to be understood that the figures are not necessarily drawn to scale, nor are the objects in the figures necessarily drawn to scale in relationship to one another. The figures are depictions that are intended to bring clarity and understanding to various embodiments of apparatuses, systems, and methods disclosed herein. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or likeparts. Moreover, it should be appreciated that the drawings are not intended to limit the scope of the present teachings in any way.DETAILED DESCRIPTION

[0020] Current disclosure describes one or more embodiments of a hybrid RF switching device (or simply, a hybrid RF switch) comprising a phase change material (PCM) device and a silicon-based transistor, and methods for implementing such device. The disclosure also describes a method of making and operating such a hybrid RF switch having a PCM device and a silicon transistor, in accordance with one or more embodiments.

[0021] RF switches are predominantly fabricated from silicon and typically include silicon-based devices, including transistors. Silicon-based RF switches offer fast switching with reduced electro-static discharge (ESD). However, they have higher Ron*Coff values compared to other switches that are fabricated from a different material. For example, phasechange materials (PCM) can be used to make RF switches with lower ROn*COff values compared to silicon-based RF switches, thus making PCM-based RF switches more desirable. However, PCM-based RF switches have several performance issues that include poorer hot switching capabilities, slower switching speeds and more severe ESD performances. Both silicon-based and PCM-based RF switches offer different advantages and disadvantages over one another. Thus, there is a need for RF switches that perform better than both silicon-based and PCM-based RF switches, while simultaneously minimizing disadvantages of both types of switches and maximizing their performances.

[0022] In one or more embodiments, a hybrid switching system that operates in radio frequencies is described. The system may include a switch circuit that includes a silicon- based transistor and a phase-change material (PCM) device that may operate in a parallel circuit arrangement. The system is designed or configured such that the parallel circuit arrangement enables the silicon-based transistor and the PCM device to operate in a hybrid mode, such as a hybrid switch circuit. The system also includes a controller for controlling the operation of the silicon-based transistor and the PCM device. This way, the controller may be used to control the silicon-based transistor and the PCM device to regulate a path through the switch circuit. The “hybrid” switch circuit is designed or configured such that the silicon-based transistor and the PCM device are both coupled in a parallel arrangement to an input terminal and an output terminal of the switch circuit. In some embodiments, the controller may also include a first bias circuit to control the silicon-based transistor and / or a second bias circuit to control the PCM device. In other words, the silicon-based transistorand the PCM device may each have their own control / bias circuit. In various embodiments of the disclosure, the path through the hybrid switch circuit can be designed or regulated based on an operating frequency of the switching, a level of hot- switching, or a level of electro-static discharge, for either silicon-based transistor or the PCM device, or both. The disclosed switch circuit can be configured to operate as a RF switching component and can be widely applicable to high frequency electronics systems.

[0023] Further details of the disclosed hybrid RF switching devices / switches and methods of operating such switches are described with respect to Figures 1-6, in accordance with various embodiments.

[0024] Figure 1 illustrates a system 105 having a hybrid switch circuit 100, in accordance with various embodiments. In one or more embodiments, the system 105 can include any radio frequency (RF) circuit, module, transceiver, or any RF system that utilizes RF communications, transmission and / or receiving. The hybrid switch circuit 100 of Figure 1 may operate as a radio frequency (RF) switching component that can be used in any RF circuit, module, transceiver, or system that utilizes RF communications, transmission and / or receiving, in accordance with various embodiments described herein. In one or more embodiments, the system 105 may host the hybrid switch circuit 100 directly within the system 105 or host a RF circuit, module, transceiver, or system that include the hybrid switch circuit 100 within the RF circuit, module, transceiver, or system. In general, system 105 may represent any type of electronic device, such as a computer or a mobile phone.

[0025] As illustrated in Figure 1, the hybrid switch circuit 100 includes a silicon-based transistor 110 and a phase-change material (PCM) device 120 placed in a parallel circuit arrangement with the silicon-based transistor 110, in accordance with one or more embodiments. In various embodiments, the silicon-based transistor 110 and the PCM device 120 are configured so that they can operate as a hybrid switch circuit unit in the parallel circuit arrangement. As further illustrated, the hybrid switch circuit 100 also includes a controller 130 that is electrically coupled to both of the silicon-based transistor 110 and the PCM device 120, in accordance with various embodiments. The controller 130 of the hybrid switch circuit 100 is configured to regulate a path through the hybrid switch circuit 100 by controlling the path to the silicon-based transistor 110 and the PCM device 120.

[0026] In one or more embodiments, the hybrid switch circuit 100 includes an input terminal 160 for receiving power (e.g., an input signal) from a source and an output terminal 170 for outputting the power (e.g., providing an output signal). As illustrated in Figure 1, the silicon-based transistor 110 and the PCM device 120 are both coupled to the input terminal160 and the output terminal 170 such that the power that is input via the input terminal 160 may be routed to / through the silicon-based transistor 110 and / or the PCM device 120, and the power is output correspondingly, in accordance with various embodiments.

[0027] As further illustrated in Figure 1, the controller 130 of the hybrid switch circuit 100 may include a transistor bias circuit 140 for controlling the silicon-based transistor 110, in one or more embodiments. The transistor bias circuit 140, which is also referred to herein as a first bias circuit 140, is electrically coupled to the silicon-based transistor 110, such that the silicon-based transistor 110 can be controlled or manipulated via the transistor bias circuit 140. As also illustrated in Figure 1, the controller 130 of the hybrid switch circuit 100 also includes a PCM bias circuit 150 for controlling the PCM device 120, in one or more embodiments. The PCM bias circuit 150, which is also referred to herein as a second bias circuit 150, is electrically coupled to the PCM device 120, such that the PCM device 120 can be controlled or manipulated via the PCM bias circuit 150.

[0028] In various embodiments, the controller 130 may regulate the path through the hybrid switch circuit 100 based on the functioning needs of the system 105 or any RF circuit, module, transceiver, or system in which the hybrid switch circuit 100 resides. In various embodiments, the path is regulated by the controller 130 based on an operating frequency of switching, a level of hot-switching, or a level of electro-static discharge for each of the silicon-based transistor 110 and the PCM device 120 within the hybrid switch circuit 100.

[0029] In accordance with one or more embodiments, the silicon-based transistor 110 may be fabricated using standard semiconductor processing techniques, including using silicon or silicon-on-insulator wafers as a starting point for device fabrication. In one or more embodiments, the silicon-based transistor 110 may include a metal-oxide semiconductor field-effect transistor (MOSFET) fabricated from a silicon-on-insulator (SOI) substrate. In one or more embodiments, the PCM device 120 may include a chalcogenide material.

[0030] As described above, the hybrid switch circuit 100 having the silicon-based transistor 110 and the PCM device 120 in a parallel circuit arrangement offers a Ron*Coff value lower than that of a stand-alone silicon-based transistor having the same physical size as the hybrid switch circuit 100, while simultaneously offering a higher level of hot-switching and a higher level of electro-static discharge tolerance compared to a stand-alone PCM device having the same dimensions as the hybrid switch circuit 100, in accordance with one or more embodiments disclosed herein.

[0031] Now referring to Figure 2, which illustrates a block diagram of a hybrid switching device 200, in accordance with one or more embodiments. As illustrated in Figure 2, thehybrid switching device 200 includes a silicon-based transistor 210 and a PCM device 220, each of which constitutes less than 100% of either a stand-alone silicon-based transistor 212 or a stand-alone PCM device 222. To illustrate the performance gain of the hybrid switching device 200 over stand-alone devices, such as the stand-alone PCM device 222, example performance metrics of the hybrid switching device 200 are provided below. For given dimensions, an area or a size for a device, for example, a typical PCM Ron*Coff value of the stand-alone PCM device 222 may be 10 fF*Ohm (femtoFarad*Ohm). For the same device dimensions or size, a typical silicon Ron*Coff value of the stand-alone silicon-based transistor 212 may be 80 fF*Ohm. Assuming the area required to make a PCM 1-Ohm device is equivalent to the area required to make a silicon-based 1-Ohm device, the hybrid switching device 200 includes: the silicon-based transistor 210 with the following values: Ron_silicon = 3*1 Ohm = 3 Ohm, COff_silicon = 80 fF*Ohm I 3 Ohm = 26.66 fF, whereas the PCM device 220 may have the following values: Ron_PCM = (3 / 2)* 1 Ohm = 1.5 Ohm, Coff_PCM = 10 fF*Ohm I 1.5 Ohm = 6.66 fF, and which lead to the hybrid switching device 200 to have the following values: Ron_total = 3 Ohm || 1.5 Ohm = 1 Ohm, COff_total = 26.66 fF + 6.66 fF = 33.33 fF, and Ron*COff = 33.33 fF*Ohm.Based on the above calculations in the example, the performance value, e.g., the Ron*COff value, of the hybrid switching device 200 is 33.33 fF*Ohm. This value is significantly less than 80 fF*Ohm, the Ron*COff value of the stand-alone silicon-based transistor 212, but not significantly higher than 10 fF*Ohm, the ROn*COff value of the stand-alone PCM device 222. In some embodiments, the increase of 23.33 fF*Ohm in the Ron*Coff value for the hybrid switching device 200 over of the stand-alone PCM device 222 may result in a hybrid switch device that may offer a higher level of hot-switching and a higher level of electro-static discharge tolerance compared to a stand-alone PCM device, as indicated in the performance tradeoffs shown in the example above. For example, a switching time for a PCM device may be about 1 microsecond, whereas a switching time for a silicon-based device may be about 1 nanosecond. Additionally, a PCM hot-switching may be around 15 dBm, which is limited by the physical and chemical limitation of the phase change material, whereas silicon-based devices can be designed to be greater than 25 dBm, in some implementations.

[0032] Figure 3 illustrates transitions between two different states of a phase-change material (PCM)-based (switching) device 320, in accordance with various embodiments. As illustrated in Figure 3, the PCM device 320 (also referred to as PCM switching device 320) includes two different states, namely a crystalline state 324 and an amorphous state 326, which can transit between the two states via an application of heat (in a form of thermal pulses). When heat is applied via a thermal pulse 327, the crystalline state 324 of the PCM device 320 becomes amorphous and thus, is transformed into the amorphous state 326. When heat is applied via a thermal pulse 328, the amorphous state 326 of the PCM device 320 becomes crystalline, and thus, crystallizes, or is transformed into the crystalline state 324. The difference in the heating profiles of the thermal pulses 327 and 328 is further illustrated in plot 330 of Figure 3. As depicted in the plot 330, the thermal pulse 327 is a short-duration in time pulse that can increase the temperature of the PCM device 320 higher compared to the thermal pulse 328, which is a longer-duration in time pulse that does not increase the temperature of the PCM device 320 as much. In other words, the thermal pulse 327 is a shorter pulse with a higher temperature increase for the PCM device 320, whereas the thermal pulse 328 is a comparatively longer pulse that creates a lower temperature increase for the PCM device 320.

[0033] Figure 4A illustrates a schematic diagram of a hybrid switching device 400, in accordance with various embodiments. The hybrid switch circuit 400 of Figure 4A may operate as a radio frequency (RF) switching component that can be used in any RF circuit, module, transceiver, or system that utilizes RF communications, transmission and / or receiving, in accordance with various embodiments described herein.

[0034] As illustrated in Figure 4A, the hybrid switching device 400 includes a silicon- based transistor, denoted as CMOS 410, and a phase-change material (PCM) device, denoted as PCM 420, which are placed in a parallel circuit arrangement. As further illustrated, the hybrid switch circuit 400 also includes a control circuit path, denoted as Crtlo 430, which is electrically coupled to both of the CMOS 410 and the PCM 420, in accordance with various embodiments. The Crtlo 430 of the hybrid switch circuit 400 is configured to provide a control signal to regulate CMOS 410 via a transistor bias circuit, denoted as CMOS bias circuit 440, by controlling an electrical signal on path Crtli 432 at a gate resistor, denoted as Rgl 444, of the CMOS 410. Similarly, the Crtlo 430 of the hybrid switch circuit 400 is also configured to regulate PCM 420 via a PCM bias circuit 450, by controlling an electrical signal on path Crth 434 at a gate resistor, denoted as Rg2 454, of the PCM 420. When power is input into the hybrid switching device 400 via Pin 460 of the hybrid switching device 400,depending on the operation of the hybrid switching device 400, power may be routed through the CMOS 410 and output via power output path Pouti 472 or the power may be routed through the PCM 420 and output via power output path Pout2474, or through both output paths (472, 474), as illustrated in Figure 4A. Either of the power output paths can be combined at power output Pouto 470, as illustrated in Figure 4 A. The operating mechanism / power transmission and signal path propagation of the hybrid switching device 400 are further described with respect to Figure 4B.

[0035] Figure 4B illustrates plot 402 depicting time-dependent voltage performance and timing parameters and plot 404 depicting power performance aspects of the hybrid switching device 400 described in Figure 4A, in accordance with various embodiments. Note that both plots 402 and 404 are depicted for illustrative purposes and are not drawn to scale. As depicted in plot 402, Crtlo 430 can be turned “ON” at approximately tO from the “OFF” state and turned “OFF” again at approximately t2 and remains turned “OFF” at t3. When Crtlo 430 is turned “ON” at tO, both Crtli 432 and Crth 434 also get turned “ON”, indicating that both CMOS 410 and PCM 420 are switched ON. At tl, as depicted in plot 402, Crth 434 gets switched “OFF”, indicating that the PCM 420 has been switched “ON” with the phase change material has been transformed from the crystalline state to the amorphous state (or vice versa). During the time of tO to tl to t2, Crth 432 remains turned “ON”, indicating that the CMOS 410 remains switched “ON” the entire time between tO and t2. At t2, as depicted in plot 402, Crth 432 gets switched “OFF”, indicating that the CMOS 410 has been turned “OFF”, while Crth 434 gets turned back “ON”, indicating that another pulse has been applied to switch the material state of the PCM 420 from the amorphous state to the crystalline state (or vice versa). At time t3, the Crth 434 gets turned “OFF”, indicating that the material phase transformation has been completed, as illustrated in Figure 4B.

[0036] Corresponding actions of power transmission are depicted in plot 404, as shown in Figure 4B. In plot 404, total power output Pouto 470 indicates a power output with a delay of time after Crtlo 430 is turned “ON” at tO. At time tl, plot 404 depicts that the total power output Pouto 470 has increased slightly, with a slight decrease in power output of Pouti 472 and a big increase in power output of Pout2474. At time t2, when Crtlo 430 gets turned “OFF”, the total power output Pouto 470, power output of Pouti 472 and power output of Pout2474 remain the same. Slightly after t2, the total power output Pouto 470 decreases slightly, with the power output of Pouti 472 reaching zero and the power output of Pout2474 providing the balance. At time t3, the power output reaches zero, indicating Pouto 470, Pouti 472 and Pout2474 reach zero.Thus, Figure 4B illustrates an example of control and timing and power output through hybrid switching device 400.

[0037] Figure 5 illustrates method S100 for operating a hybrid switching system, in accordance with various embodiments. In one or more embodiments, the hybrid switching system may include the hybrid switch circuit 100 as described with respect to Figure 1, the hybrid switching device 200 as described with respect to Figure 2, or the hybrid switching device 400 as described with respect to Figure 4A.

[0038] As illustrated in Figure 5, the method S100 includes, at step SI 10, receiving power via an input terminal of a hybrid switch circuit, wherein the hybrid switch circuit has a silicon-based transistor and a phase-change material (PCM) device in a parallel circuit arrangement with the silicon-based transistor. In one or more embodiments, the input terminal is electrically coupled to the silicon-based transistor and to the PCM device. The method S100 also includes, at step S120, receiving a control signal from a controller, such as controller 130 or control circuit Crtlo 430, electrically coupled to the silicon-based transistor and the PCM device; at step S 130, regulating, via the controller using the control signal, a path for the power through the hybrid switch circuit; and at step SI 40, outputting the power at an output terminal of the hybrid switch circuit based on the regulated path through the hybrid switch circuit, wherein the output terminal is electrically coupled to the silicon-based transistor and to the PCM device.

[0039] In one or more embodiments, the controller may be configured to regulate the path via the hybrid switch circuit based on an operating frequency of switching, a level of hot- switching, or a level of electro-static discharge for each of the silicon-based transistor and the PCM device. In one or more embodiments, the controller may include a first bias circuit configured to control the silicon-based transistor and a second bias circuit configured to control the PCM device.

[0040] In various embodiments, the method S100 may optionally include, at step S150, providing a bias voltage to the first bias circuit to turn on the silicon-based transistor and outputting the power via the silicon-based transistor. In various embodiments, the method S 100 may optionally include, at step 160, providing a bias voltage to the second bias circuit to turn on the PCM device and outputting the power via the PCM device.

[0041] In one or more embodiments, the hybrid switch circuit may operate as a radio frequency (RF) switching component. In one or more embodiments, the PCM device may include a chalcogenide material, the silicon-based transistor comprises a metal-oxidesemiconductor field-effect transistor (MOSFET) fabricated from a silicon-on-insulator (SOI) substrate, or a combination thereof.

[0042] In one or more embodiments, the hybrid switch circuit has a ROn*Coff value lower than that of a stand-alone silicon-based transistor having a same size as the hybrid switch circuit. In one or more embodiments, the hybrid switch circuit has a higher level of hot- switching and a higher level of electro-static discharge tolerance compared to a stand-alone PCM device having a same size as the hybrid switch circuit.

[0043] Figure 6 illustrates method S200 for fabricating a hybrid switch circuit, in accordance with various embodiments. In one or more embodiments, the hybrid switch circuit may include the hybrid switch circuit 100 as described with respect to Figure 1, the hybrid switching device 200 as described with respect to Figure 2, the hybrid switching device 400 as described with respect to Figure 4A, or the hybrid switching system as described with respect to Figure 5.

[0044] As illustrated in Figure 6, the method S200 includes, at step S210, producing a silicon-based transistor from a silicon-on-insulator (SOI) substrate; and at step S220, producing a phase-change material (PCM) device approximate the silicon-based transistor via a three-dimensional integrated circuit (3D-IC) fabrication process, wherein the PCM device includes a chalcogenide material.

[0045] In one or more embodiments, the hybrid switch circuit has a Ron*Coff value lower than that of a stand-alone silicon-based transistor having a same size as the hybrid switch circuit, the hybrid switch circuit has a higher level of hot-switching and a higher level of electro-static discharge tolerance compared to a stand-alone PCM device having a same size as the hybrid switch circuit, or a combination thereof.

[0046] In one or more embodiments, the hybrid switch circuit may operate as a radio frequency (RF) switching component and is integrated with a host device to perform RF switching functions.

Claims

CLAIMSWhat is claimed is:

1. A system, comprising: a hybrid switch circuit comprising: a silicon-based transistor; and a phase-change material (PCM) device in a parallel circuit arrangement with the silicon-based transistor, wherein the silicon-based transistor and the PCM device are configured to operate in the parallel circuit arrangement as the hybrid switch circuit; and a controller electrically coupled to the silicon-based transistor and the PCM device, the controller configured to control the silicon-based transistor and the PCM device to regulate a path through the hybrid switch circuit.

2. The system of claim 1, wherein the hybrid switch circuit further comprises an input terminal and an output terminal, wherein the silicon-based transistor and the PCM device are both coupled between the input terminal and the output terminal.

3. The system of claim 1, wherein the controller comprises: a first bias circuit electrically coupled to, and configured to control, the silicon-based transistor, and a second bias circuit electrically coupled to, and configured to control, the PCM device.

4. The system of claim 1, wherein the path through the hybrid switch circuit is regulated based on an operating frequency of switching, a level of hot-switching, or a level of electrostatic discharge for each of the silicon-based transistor and the PCM device.

5. The system of claim 1, wherein the hybrid switch circuit operates as a radio frequency (RF) switching component.

6. The system of claim 1, wherein the PCM device comprises a chalcogenide material, the silicon-based transistor comprises a metal-oxide semiconductor field-effect transistor (MOSFET) fabricated from a silicon-on-insulator (SOI) substrate, or a combination thereof.

7. The system of claim 1, wherein the hybrid switch circuit has a ROn*Coff value lower than that of a stand-alone silicon-based transistor having a same size as the hybrid switch circuit.

8. The system of claim 1, wherein the hybrid switch circuit has a higher level of hot- switching and a higher level of electro-static discharge tolerance compared to a stand-alone PCM device having a same size as the hybrid switch circuit.

9. A method for operating a hybrid switching system, comprising: receiving power via an input terminal of a hybrid switch circuit, the hybrid switch circuit comprising a silicon-based transistor and a phase-change material (PCM) device in a parallel circuit arrangement with the silicon-based transistor, wherein the input terminal is electrically coupled to the silicon-based transistor and to the PCM device; receiving a control signal from a controller electrically coupled to the silicon-based transistor and the PCM device; regulating, via the controller using the control signal, a path for the power through the hybrid switch circuit; and outputting the power at an output terminal of the hybrid switch circuit based on the regulated path through the hybrid switch circuit, wherein the output terminal is electrically coupled to the silicon-based transistor and to the PCM device.

10. The method of claim 9, wherein the controller is configured to regulate the path via the hybrid switch circuit based on an operating frequency of switching, a level of hot- switching, or a level of electro-static discharge for each of the silicon-based transistor and the PCM device.

11. The method of claim 9, wherein the controller comprises a first bias circuit configured to control the silicon-based transistor and a second bias circuit configured to control the PCM device.

12. The method of claim 11, further comprising: providing a bias voltage to the first bias circuit to turn on the silicon-based transistor; and outputting the power via the silicon-based transistor.

13. The method of claim 11, further comprising: providing a bias voltage to the second bias circuit to turn on the PCM device; and outputting the power via the PCM device.

14. The method of claim 9, wherein the hybrid switch circuit operates as a radio frequency (RF) switching component.

15. The method of claim 9, wherein the PCM device comprises a chalcogenide material, the silicon-based transistor comprises a metal-oxide semiconductor field-effect transistor (MOSFET) fabricated from a silicon-on-insulator (SOI) substrate, or a combination thereof.

16. The method of claim 9, wherein the hybrid switch circuit has a Ron*Coff value lower than that of a stand-alone silicon-based transistor having a same size as the hybrid switch circuit.

17. The method of claim 9, wherein the hybrid switch circuit has a higher level of hot- switching and a higher level of electro-static discharge tolerance compared to a stand-alone PCM device having a same size as the hybrid switch circuit.

18. A method for fabricating a hybrid switch circuit, comprising: producing a silicon-based transistor from a silicon-on-insulator (SOI) substrate; and producing a phase-change material (PCM) device approximate the silicon-based transistor via a three-dimensional integrated circuit (3D-IC) fabrication process, wherein the PCM device comprises a chalcogenide material.

19. The method of claim 18, wherein: the hybrid switch circuit has a Ron*COff value lower than that of a stand-alone silicon- based transistor having a same size as the hybrid switch circuit, the hybrid switch circuit has a higher level of hot- switching and a higher level of electro-static discharge tolerance compared to a stand-alone PCM device having a same size as the hybrid switch circuit, or a combination thereof.

20. The method of claim 18, wherein the hybrid switch circuit operates as a radio frequency (RF) switching component and is integrated with a host device to perform RF switching functions.

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