Triode device based on single double-walled carbon nanotube structure and manufacturing method therefor

Abstract

A triode device based on a single double-walled carbon nanotube structure and a manufacturing method therefor. The triode device based on a single double-walled carbon nanotube structure comprises: a single double-walled carbon nanotube, wherein an inner-layer carbon nanotube of the double-walled carbon nanotube is doped with boron to form a source and a drain, which have the properties of a P-type material, a field-effect transistor channel is formed between the source and the drain, and an outer-layer carbon nanotube of the double-walled carbon nanotube is axially tailored to form a gate, which has the properties of an N-type material; and a P-N junction, which is formed between the P-type material and the N-type material. The triode device achieves high integration at the nanoscale, solves the interface and contact resistance problems of traditional single-walled carbon nanotube field-effect transistors, avoids the challenges of material coupling, reduces device size, and breaks through the nanoscale limitations of existing processes. The device uses a single material, thereby enhancing uniformity and controllability, and improving current driving capability and electrical performance, and the device exhibits the characteristics of low power consumption and fast response, and is suitable for new types of optoelectronic and flexible electronic devices.

Description

Triode device based on single double-walled carbon nanotube structure and manufacturing method thereof TECHNICAL FIELD

[0001] The present application relates to the technical field of electronic devices, in particular to a triode device based on single double-walled carbon nanotube structure and manufacturing method thereof. BACKGROUND

[0002] Carbon nanotubes, as a new type of nanomaterial, have shown great application potential in the field of electronic devices due to their excellent electrical, mechanical and thermal properties. In particular, double-walled carbon nanotubes, composed of two concentric carbon tubes, not only retain the excellent electrical conductivity of single-walled carbon nanotubes, but also have higher mechanical strength and thermal stability.

[0003] In the past research, field effect transistors with single-walled carbon nanotube as channel have shown their application prospects in high-performance and low-power electronic devices. However, such field effect transistors face some challenges in practical application, especially interface characteristics, contact resistance, material uniformity, and the need for smaller size.

[0004] It should be noted that the information disclosed in the above background section is only for understanding the background of the present application, and therefore can include information that does not constitute prior art known to those of ordinary skill in the art. SUMMARY

[0005] The main purpose of the present application is to overcome the defects of the above background technology, and to provide a triode device based on single double-walled carbon nanotube structure and manufacturing method thereof.

[0006] To achieve the above purpose, the present application adopts the following technical solutions:

[0007] A triode device based on single double-walled carbon nanotube structure, comprising:

[0008] a single double-walled carbon nanotube;

[0009] The inner layer carbon nanotube of the double-walled carbon nanotube is formed into a source electrode and a drain electrode by boron doping, has the properties of P-type material, and a field effect transistor channel is formed between the source electrode and the drain electrode;

[0010] The outer layer carbon nanotube of the double-walled carbon nanotube is formed into a gate electrode by axial cutting, has the properties of N-type material;

[0011] a P-N junction formed between the P-type material and the N-type material, a depletion region is formed at the P-N junction; under forward bias condition, allows current to flow from the source electrode to the drain electrode, and under reverse bias condition, prevents current from passing through;

[0012] An electrode is assembled on the source, the drain and the gate.

[0013] Further, the double-walled carbon nanotube has a chirality (n,m) with m=0 or n-m≠3q, wherein n and m are integers, q is an integer, and n>m.

[0014] Further, the inner layer carbon nanotube has a diameter of 1-20 nm.

[0015] A manufacturing method of the triode device based on the single double-walled carbon nanotube structure, comprising:

[0016] The inner layer carbon nanotube of the single double-walled carbon nanotube is boron-doped to form the source and the drain with P-type material properties;

[0017] The outer layer carbon nanotube of the single double-walled carbon nanotube is axially cut to form the gate with N-type material properties;

[0018] A P-N junction is formed between the P-type material and the N-type material, and a depletion region is formed at the P-N junction to allow current to flow from the source to the drain under forward bias condition and to prevent current from passing through under reverse bias condition;

[0019] An electrode is assembled on the source, the drain and the gate.

[0020] Further, the outer layer carbon nanotube of the single double-walled carbon nanotube is axially cut to form the gate with N-type material properties, specifically comprising:

[0021] The double-walled carbon nanotube is adhered to an aluminum wire through conductive epoxy, and then the aluminum wire is fixed to a fixed side of a holder, and the aluminum wire is straightened;

[0022] A tungsten electrode is used for mobile etching, the tungsten electrode is made to touch the tip of the double-walled carbon nanotube to form a contact, then a stable electrical connection of the contact point is established through current heating, the tungsten electrode is slid along the axial direction of the double-walled carbon nanotube to axially break the outer layer of the double-walled carbon nanotube, and the axial cutting is completed.

[0023] Further, the electrode is assembled on the source, the drain and the gate, specifically comprising: electron beam lithography is adopted, exposure is performed according to a designed electrode, a pattern is formed in an exposed area after development, and the electrode is formed through metal deposition and stripping of photoresist; and heat treatment and annealing are performed to ensure the contact of the electrode and the carbon nanotube.

[0024] The present application has the following beneficial effects:

[0025] The application provides a single double-walled carbon nanotube-based triode device, in which an inner layer carbon nanotube is doped with boron to form a source electrode and a drain electrode with P-type material properties, and an outer layer carbon nanotube is axially cut to form a gate electrode with N-type material properties. The device realizes high integration in nanoscale and can be manufactured by an atomic-level manufacturing method. The structural design of the application not only solves the challenges of interface characteristics, contact resistance and material uniformity of a traditional single-walled carbon nanotube field effect transistor, but also avoids interface and contact problems caused by coupling with other materials by integrating P-type and N-type materials in a single double-walled carbon nanotube, realizes further reduction of the device size, and breaks through the size bottleneck of the existing semiconductor process in nanoscale. In addition, since the entire field effect transistor is composed of a double-walled carbon nanotube, the material uniformity and controllability are enhanced, the current driving capability is improved, and the electrical characteristics are optimized. The triode device can also maintain stable performance under extreme working conditions such as high temperature and high pressure, realize low power consumption and fast response, and is suitable for new photoelectric and flexible electronic devices, providing a solid technical foundation for the technological progress and industrial application of the next generation of electronic devices, and having great application potential and the ability to promote the development and technological innovation of related industries.

[0026] Other beneficial effects of the embodiments of the application will be further described below. BRIEF DESCRIPTION OF DRAWINGS

[0027] Fig. 1a is a structural schematic diagram of a single double-walled carbon nanotube-based field effect transistor device according to an embodiment of the application.

[0028] Fig. 1b is a schematic diagram of the principle of a single double-walled carbon nanotube-based field effect transistor device according to an embodiment of the application.

[0029] Fig. 2 is a band structure diagram of an inner layer carbon nanotube P-type semiconductor according to an embodiment of the application.

[0030] Fig. 3 is a band structure diagram of an axially cut outer layer carbon nanotube N-type semiconductor according to an embodiment of the application. DETAILED DESCRIPTION

[0031] The embodiments of the application will be described in detail below. It should be emphasized that the following description is only exemplary and is not intended to limit the scope of the application and its applications.

[0032] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element. In addition, the connection can be for fixing or for coupling or communicating.

[0033] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like, indicate directions or positions based on the directions or positions shown in the drawings, and are used for convenience only in describing the application and its embodiments, and are not intended to indicate or imply specific orientations of the devices or elements thereof, or to imply or infer any preferred or necessary orientations of the devices or elements thereof, and therefore should not be construed as limiting the application.

[0034] In addition, the terms "first", "second", "third", etc. are used herein only to describe various instances, steps, etc. and are not used to indicate or imply relative importance or a number of instances, steps, etc. that are indicated. Thus, a feature defined with a "first", "second", etc. can include one or more such features implicitly or explicitly. In the description of embodiments of the application, the meaning of "a plurality" is two or more, unless otherwise expressly specified.

[0035] Referring to FIG. 1a and FIG. 1b, an embodiment of the application provides a single-walled double-wall carbon nanotube structure-based triode device, comprising: a single-walled double-wall carbon nanotube; an inner-layer carbon nanotube 1 of the double-wall carbon nanotube forms a source electrode S and a drain electrode D by boron doping, has the property of P-type material, and a field effect tube channel is formed between the source electrode S and the drain electrode D; an outer-layer carbon nanotube 2 of the double-wall carbon nanotube forms a gate electrode G by axial cutting, has the property of N-type material; a P-N junction is formed between the P-type material and the N-type material, and a depletion region is formed at the P-N junction; under a forward bias condition, current is allowed to flow from the source electrode S to the drain electrode D, and under a reverse bias condition, current is prevented from passing; an electrode 3 is assembled on the source electrode S, the drain electrode D, and the gate electrode G.

[0036] Among them, the source electrode S is the input end of the current. The drain electrode D is the output end of the current. The gate electrode G can control the concentration of carriers in the channel by applying a voltage, thereby controlling the flow of current. The channel is the area connecting the source electrode S and the drain electrode D, and the current can flow therein. The conductivity of the channel can be controlled by the gate electrode G voltage. Due to the PN junction on the double-layer carbon tube, when the gate electrode G voltage is zero, there are carriers in the channel, and current can flow from the source electrode S to the drain electrode D. When a negative gate electrode G voltage is applied, a reverse bias is formed at the PN junction, the depletion layer expands, the channel narrows, and the current decreases. With the increase of negative voltage, the depletion layer further expands until the channel is completely closed and the current is interrupted.

[0037] In some embodiments, the double-wall carbon nanotube has chirality (n, m), m = 0 or n - m ≠ 3q, where n and m are integers, q is an integer, and n > m.

[0038] In some embodiments, the diameter of the inner-layer carbon nanotube 1 is 1-20 nm.

[0039] In some embodiments, the boron doping concentration of the inner layer carbon nanotube 1 is 1at%-3at%.

[0040] In some embodiments, the material of the electrode can be selected from gold, platinum, chromium, titanium, etc.

[0041] Referring to FIG. 1a and FIG. 1b, the present embodiment also provides a manufacturing method of the triode device based on the single carbon nanotube structure, comprising:

[0042] The inner layer carbon nanotube 1 of the single double-walled carbon nanotube is boron-doped to form a source electrode S and a drain electrode D with P-type material properties;

[0043] The outer layer carbon nanotube 2 of the single double-walled carbon nanotube is axially cut to form a gate electrode G with N-type material properties;

[0044] A P-N junction is formed between the P-type material and the N-type material, and a depletion region is formed at the P-N junction to allow current to flow from the source electrode S to the drain electrode D under forward bias conditions and to prevent current from passing under reverse bias conditions;

[0045] An electrode 3 is assembled on the source electrode S, the drain electrode D, and the gate electrode G.

[0046] The present embodiment proposes a triode device based on a single double-walled carbon nanotube structure, which realizes a nanoscale complete field effect transistor device with a source electrode S, a drain electrode D, a gate electrode P, and an NPN junction type. Using doping and cutting, a complete triode / field effect transistor structure and function is realized in a single double-walled carbon nanotube.

[0047] The present invention utilizes the double-layer structure of double-walled carbon nanotubes. Based on the doping of the inner layer, the outer layer can be cut on a nanoscale manipulation platform to obtain a special structure of field effect transistor. Nanoscale manipulation methods include current induction, chemical oxidation, argon plasma etching, and metal particle-assisted splitting. The P-type material and the N-type material based on the single double-walled field effect transistor are both part of the carbon tube. The present invention can bypass the coupling of the carbon tube and other materials to solve the problem of interface and contact. At the same time, the size of the device can be further reduced. The device can be manufactured on a nanoscale by atomic-level manufacturing methods, and its diameter can be less than a few nanometers. Since the entire field effect transistor is composed of a double-walled carbon nanotube, the problem of material uniformity and controllability is also solved. The field effect transistor device constructed by the present invention not only can realize higher current driving capability and better electrical properties, but also can maintain stable performance under extreme working conditions such as high temperature and high pressure. At the same time, it can realize low power consumption, fast response, and flexible electronic device applications.

[0048] The specific embodiments of the present invention are further described below.

[0049] As shown in FIG. 1a and FIG. 1b, a single double-walled carbon nanotube based field effect transistor device includes source S, drain D, and gate G, all formed in the same double-walled carbon nanotube. The inner layer of the double-walled carbon nanotube is a boron-doped carbon nanotube, which is a P-type material forming the source S and the drain D as the field effect transistor channel. The outer layer of the carbon nanotube is an axially cut carbon nanotube, which is an N-type material forming the gate G. A P-N junction is formed between the N-type material and the P-type material.

[0050] The example of FIG. 1a and FIG. 1b is a single double-walled carbon nanotube based field effect transistor device, which includes a double-walled carbon nanotube with an inner layer of a complete boron-doped nanotube structure and an outer layer of an axially cut nanotube structure. The source S and the drain D shown in FIG. 1a and FIG. 1b are the inner layer nanotube. Due to the boron doping, the material is a P-type semiconductor. As shown in FIG. 2, due to the lack of valence electrons of the boron atom after the boron atom doping, holes appear, which causes the energy band structure to shift upward. Even though the outer layer carbon nanotube is present, the material still exhibits P-type semiconductor properties. The gate G shown in FIG. 1a and FIG. 1b is the outer layer carbon nanotube. Due to the cut, additional dangling electrons are introduced, which causes the material to be a multi-charge carrier and to exhibit N-type conductive material properties in an electric field. As shown in FIG. 3, the cut structure causes the material to have a downward shift in the energy band in an electric field, which exhibits the properties of a charge multi-substance semiconductor. A depletion layer is formed at the junction of the P-type material and the N-type material.

[0051] Fabrication example

[0052] Carbon nanotube selection

[0053] Boron-doped double-walled carbon nanotubes with an inner diameter of about 1-20 nm and chirality of m=0 or n-m≠3q are selected, and the boron doping concentration of the inner layer is 1at%-3at%.

[0054] Cutting the carbon nanotube

[0055] The double-walled carbon nanotube is adhered to an aluminum wire through conductive epoxy, and then the aluminum wire is fixed to the fixed side of the holder. The aluminum wire is straightened.

[0056] Electrode etching process: performed in a low acceleration voltage (e.g., 100 keV) transmission electron microscope using an etched tungsten electrode as a moving electrode. The electrode is adjusted so that the moving electrode touches the tip of the double-walled carbon nanotube to form a contact. Then, a stable electrical contact at the contact point is established by high current heating. The electrode is slid so that the carbon tube is axially broken down. The electrical bias and current readings are monitored during the experiment to ensure that there is enough energy in the electrode to break down the first layer of carbon tube.

[0057] Electrode assembly

[0058] Position the single carbon nanotube and record its location. Design the electrode to ensure that the electrode contact area overlaps with the carbon nanotube. Choose appropriate electrode materials such as gold, platinum, chromium, titanium, etc. to ensure good contact with the carbon nanotube.

[0059] Use electron beam lithography to expose the designed electrode. After development, a pattern is formed in the exposed area. Through metal deposition and stripping of photoresist, a high-precision electrode is formed.

[0060] Finally, perform heat treatment and annealing to ensure the contact between the electrode and the carbon nanotube.

[0061] In summary, the main technical superiority of the present application lies in its innovative design of a triode device based on a single double-walled carbon nanotube structure. This design can utilize atomic-level manufacturing methods to realize the integration of source, drain, gate, and NPN junction type complete field effect transistor devices on a very small nanoscale. Through precise doping and tailoring techniques, the present application not only realizes the structure and function of a triode / field effect transistor in a single double-walled carbon nanotube, but also provides a new design principle and manufacturing method, effectively breaking through the size limitations of existing semiconductor processes on the nanoscale. The special double-layer structure of double-walled carbon nanotubes, combined with nanoscale manipulation techniques such as current-induced, chemical oxidation, argon plasma etching, intercalation or metal particle-assisted cleavage, enables the present application to solve the interface and contact problems without relying on the coupling of carbon nanotubes with other materials, while achieving a significant reduction in device size. This design also solves the problem of material uniformity and controllability, as the entire field effect transistor is composed of a single double-walled carbon nanotube. In addition, the triode device of the present application exhibits excellent electrical characteristics, with higher current driving capability, while maintaining stable performance under extreme working conditions such as high temperature and high pressure. It also realizes low power consumption, fast response, and is suitable for flexible electronic devices, providing a solid technical foundation for the miniaturization, high performance, and multi-functional integration of electronic devices. These advantages indicate that this technology has great application potential in the fields of computers, communications, sensors, etc., and is expected to promote the development and technological innovation of related industries, opening up new directions for the further development of electronic devices.

[0062] The above further describes the present application in conjunction with specific / preferred embodiments, and cannot be deemed to limit the specific implementation of the present application to these descriptions. For those skilled in the art to which the present application belongs, without departing from the concept of the present application, they can make several substitutions or variations to the described embodiments, and these substitutions or variations shall be deemed to fall within the protection scope of the present application. In the description of the present application, the description of the terms "an embodiment", "some embodiments", "a preferred embodiment", "an example", "a specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are contained in at least one embodiment or example of the present application. In the present application, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In the case of no mutual contradiction, those skilled in the art can combine and combine the different embodiments or examples described in the present application and the features of the different embodiments or examples. Although the embodiments of the present application and their advantages have been described in detail, it should be understood that various changes, substitutions and modifications can be made herein without departing from the scope of protection of the patent application.

Claims

1. A triode device based on a single double-walled carbon nanotube structure, characterized by, Comprise: a single double-walled carbon nanotube; an inner carbon nanotube of the double-walled carbon nanotube is boron-doped to form a source electrode and a drain electrode, having a property of P-type material, a field effect tube channel being formed between the source electrode and the drain electrode; an outer carbon nanotube of the double-walled carbon nanotube is axially cut to form a gate electrode, having a property of N-type material; the outer carbon nanotube introduces extra dangling electrons due to the cutting, and the energy band is lowered in an electric field, resulting in the material being a multi-charge carrier, exhibiting a property of a charge plasmon semiconductor, and the property being N-type conductive material in an electric field; a P-N junction is formed between the P-type material and the N-type material, and a depletion region is formed at the P-N junction; under a forward bias condition, allowing current to flow from the source electrode to the drain electrode, and under a reverse bias condition, preventing current from passing through; an electrode is assembled on the source electrode, the drain electrode and the gate electrode.

2. The single double-walled carbon nanotube structure based triode device of claim 1, wherein, The double-walled carbon nanotube has a chirality (n, m), m = 0 or n-m ≠ 3q, wherein n and m are integers, q is an integer, and n > m.

3. A method of fabricating a single double-walled carbon nanotube structure based triode device according to any one of claims 1 to 2, characterized by, Comprise: boron-doping an inner carbon nanotube of a single double-walled carbon nanotube to form a source electrode and a drain electrode having a property of P-type material; axially cutting an outer carbon nanotube of the single double-walled carbon nanotube at an atomic level to form a gate electrode having a property of N-type material; forming a P-N junction between the P-type material and the N-type material, and a depletion region is formed at the P-N junction, to allow current to flow from the source electrode to the drain electrode under a forward bias condition, and to prevent current from passing through under a reverse bias condition; assembling an electrode on the source electrode, the drain electrode and the gate electrode.

4. The method of fabricating a triode device based on a single double-walled carbon nanotube structure according to claim 3, wherein The assembling of the electrode on the source electrode, the drain electrode and the gate electrode specifically comprises: using an atomic-level manufacturing method, electron beam lithography, exposing according to a designed electrode, forming a pattern in the exposed area after development, forming an electrode through metal deposition and stripping photoresist; and performing heat treatment and annealing to ensure the contact between the electrode and the carbon nanotube.

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