Magnetron sputtering device

Abstract

A magnetron sputtering device according to the present invention comprises the following, all of which are accommodated in the interior of a chamber: a target (20) that emits film-forming particles; a magnet (22) that is installed to the back surface side of the target; a high-voltage application unit (31) that applies a high voltage to the target; a case (40) that accommodates the target, the magnet, and the high-voltage application unit such that the surface of the target is exposed, and that forms a target electrode (50); insulating plates (30) that are obtained by arranging a plurality of sheet members between the inner wall of the case and the bottom and side surfaces of the magnet so as to provide gaps forming a residual air exhaust flow path which crosses the bottom of the magnet, follows the side surfaces of the magnet, and communicates with the interior of the chamber; and a to-be-treated material that, when an inert gas supplied into the chamber is ionized and collided with the surface of the target, is formed into a film by using particles knocked out from the surface of the target.

Description

Magnetron sputtering equipment

[0001] The present invention relates to a magnetron sputtering apparatus for forming a film on a material to be processed, such as resin or glass.

[0002] 2. Description of the Related Art In a film forming apparatus using a magnetron sputtering method, an electrode equipped with a sputtering target (hereinafter simply referred to as a target) is used (see, for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2022-029738

[0004] Multiple components are densely packed inside the target electrode of a magnetron sputtering device. The components are fastened together with bolts, but even when the components are completely attached, gaps inevitably form. During magnetron sputtering, air (gas) flows into the gaps, creating gas reservoirs. Because gas in the reservoirs is difficult to exhaust, exhausting takes time and can sometimes induce localized abnormal discharges. When abnormal discharges occur inside the target electrode, the insulator case carbonizes, eliminating the insulating function in this area. Therefore, all carbonized areas must be removed. Since restoring such equipment takes time, product production is halted during this time, resulting in reduced productivity.

[0005] The present invention has been made in view of the above, and has as its object to provide a magnetron sputtering apparatus that can reduce the occurrence of local abnormal discharge inside the target electrode.

[0006] In order to solve the above-mentioned problems and achieve the object, the magnetron sputtering apparatus of the present invention comprises: a target housed inside a chamber and emitting particles to be deposited; a magnet installed facing the back side of the target; a magnet case that houses the magnet and a high-voltage application unit that applies a high voltage to the target via the magnet; a holding member that houses the target, the magnet, the magnet case, and the high-voltage application unit so that the front surface of the target is exposed, forming a target electrode; an insulating plate that is arranged between the bottom and side surfaces of the magnet and the inner wall of the holding member, with a gap that crosses the bottom surface of the magnet, passes through the side surface of the magnet, and communicates with the inside of the chamber; and a workpiece installed in a position facing the target, on which a film is formed by particles that are knocked off the surface of the target when inert gas supplied inside the chamber is ionized by the high voltage generated by the high-voltage application unit and caused to collide with the surface of the target by the attractive force of the magnetic field of the magnet, and the gap forms an exhaust flow path for residual air (gas).

[0007] The magnetron sputtering device according to the present invention has the effect of reducing the occurrence of local abnormal discharge inside the target electrode.

[0008] FIG. 1 is a diagram showing an example of a schematic configuration of a magnetron sputtering apparatus. FIG. 2 is a cross-sectional view showing an example of a schematic structure of a target electrode provided in the magnetron sputtering apparatus of the embodiment. FIG. 3 is a partial cross-sectional view showing an example of a target electrode structure. FIG. 4 is a cross-sectional view showing an example of a bolt structure used to fasten various parts of the target electrode. FIG. 5 is an external perspective view showing an example of a target electrode used in the magnetron sputtering apparatus of the embodiment. FIG. 6 is a top view of the target electrode shown in FIG. 5. FIG. 7 is an external perspective view showing an example of an internal structure of the target electrode used in the magnetron sputtering apparatus of the embodiment. FIG. 8 is a top view of the internal structure of the target electrode shown in FIG. 7. FIG. 9 is a diagram showing an exhaust path for residual gas in the target electrode used in the magnetron sputtering apparatus of the embodiment. FIG. 10 is a cross-sectional view showing an example of a schematic structure of a target electrode provided in a magnetron sputtering apparatus of a comparative example.

[0009] Hereinafter, embodiments of a surface treatment device according to the present disclosure will be described in detail with reference to the drawings. Note that the present invention is not limited to these embodiments. Furthermore, the components in the following embodiments include those that are replaceable and easily conceivable by those skilled in the art, or those that are substantially the same.

[0010] (Schematic Configuration of Magnetron Sputtering Apparatus) A schematic configuration of a magnetron sputtering apparatus 10 according to an embodiment of the present disclosure will be described with reference to Fig. 1. Fig. 1 is a diagram showing an example of the schematic configuration of a magnetron sputtering apparatus.

[0011] The magnetron sputtering device 10 deposits target particles 18 emitted from a target 20 placed opposite the workpiece 14 on the surface of the workpiece 14, which is placed inside a vacuum chamber 12, thereby producing a thin film of target particles 18 on the surface of the workpiece 14.

[0012] In the magnetron sputtering apparatus 10, the material to be processed 14 is, for example, a glass substrate, a silicon (Si) wafer, etc. The material to be processed 14 is held by a positive electrode 13.

[0013] The target 20 contains elements such as copper and aluminum, which are materials for the thin film. A magnet 22 is installed on the rear side of the target 20 opposite the surface facing the workpiece 14. The magnet 22 is housed in a magnet case 23 and held on the rear side of the target 20. The magnet case 23 is made of, for example, copper (Cu).

[0014] The target 20 and the magnet case 23 are housed in a case 40 via an insulating plate 30. The insulating plate 30 is made of, for example, Teflon (registered trademark). The insulating plate 30 is made up of a plurality of plate-shaped plates of the same thickness arranged with gaps between them. The arrangement of the insulating plates 30 will be described in detail later (see FIGS. 7 and 8).

[0015] The target 20 , magnet 22 , magnet case 23 , insulating plate 30 , and case 40 described above constitute a target electrode 50 .

[0016] The case 40 holds the periphery of the target 20 via the insulating plate 30 and provides a ground potential. The case 40 is formed of, for example, an aluminum alloy or stainless steel (SUS). Because the magnet 22 is installed near the case 40, the case 40 is made of a non-magnetic material that is not affected by the magnet 22. The case 40 is an example of a holding member in the present disclosure. The connection structure between the target 20, the insulating plate 30, and the case 40 will be described in detail below (see FIGS. 3 and 4).

[0017] A DC power supply 15 is connected between the grounded positive electrode 13 and the target 20 held in an insulated state in the grounded case 40 on the target 20 side, and applies a high voltage of, for example, about minus 700 volts.

[0018] An inert gas (e.g., argon gas) is supplied to the inside of the vacuum chamber 12 through a gas supply line 16. The supplied inert gas is excited by plasma generated by a high voltage applied between the positive electrode 13 and the target electrode 50, and becomes argon ions.

[0019] At this time, a magnet 22 installed on the back side of the target 20 generates a magnetic field in a direction perpendicular to the electric field near the electrode on the case 40 side. The generated magnetic field attracts electrons in the plasma, creating a space with high electron density near the target 20. Argon ions collide with the thus-created space with high electron density, further promoting ionization of the argon. The generated argon ions then collide with the surface of the target 20, knocking out target particles 18 (atoms and molecules) that make up the target 20, a process known as sputtering.

[0020] The target particles 18 ejected by sputtering reach the surface of the material 14 to be treated on the side of the positive electrode 13 and form a thin film of the target particles 18 on the surface of the material 14 to be treated.

[0021] After the thin film has been formed, the magnetron sputtering apparatus 10 opens the exhaust path 17 to exhaust the residual gases inside the chamber 12 and return the pressure inside the chamber 12 to atmospheric pressure.

[0022] Note that openable and closable valves and shutters (not shown) are installed between the gas supply path 16 and the chamber 12, and between the exhaust path 17 and the chamber 12. In the magnetron sputtering apparatus 10, first, the gas supply path 16 is closed and the exhaust path 17 is opened to evacuate the interior of the chamber 12. Then, both the gas supply path 16 and the exhaust path 17 are opened to supply, for example, argon gas into the interior of the chamber 12. Then, even while sputtering the workpiece 14 is being performed, both the gas supply path 16 and the exhaust path 17 are opened to maintain the supply of argon gas. After sputtering of the workpiece 14 is completed, the gas supply path 16 is closed and the exhaust path 17 is opened to exhaust any remaining gas from the interior of the chamber 12. Then, after the residual gas has been exhausted, the gas supply path 16 is opened and the exhaust path 17 is closed, and air is introduced into the interior of the chamber 12, returning the interior of the chamber 12 to atmospheric pressure.

[0023] (Schematic Structure of Target Electrode) The schematic structure of the target electrode 50 provided in the magnetron sputtering apparatus 10 of the embodiment will be described with reference to Fig. 2. Fig. 2 is a cross-sectional view showing an example of the schematic structure of the target electrode provided in the magnetron sputtering apparatus of the embodiment.

[0024] A high voltage of, for example, about minus 700 volts is applied to the magnet 22 from a high voltage application unit 31 provided at the bottom of the target electrode 50 .

[0025] Inside the magnet case 23, a cooling water channel 32 for supplying cooling water from the bottom of the target electrode 50 and a cooling water channel 33 for discharging cooling water to the bottom of the target electrode 50 are connected to each other.

[0026] The insulating plate 30, which holds the magnet case 23 inside the case 40, is made up of multiple plates of the same thickness, and the plates are arranged with gaps between them. The arrangement of the insulating plate 30 will be described in detail later (see FIGS. 7 and 8).

[0027] (Connection structure of each part in target electrode) The connection structure of each part in target electrode 50 will be described with reference to Fig. 3 and Fig. 4. Fig. 3 is a partial cross-sectional view showing an example of the structure of the target electrode. Fig. 4 is a cross-sectional view showing an example of the structure of a bolt used to fasten each part in the target electrode.

[0028] As shown in FIG. 3, the case 40 and the insulating plate 30 are fastened together by bolts 24a.

[0029] The target 20 is attached to the case 40 via the magnet case 23 that houses the magnet 22. More specifically, the target 20 is fastened to the magnet case 23 by bolts 24b. The magnet case 23 is fastened to the case 40 by bolts 24c.

[0030] Additionally, the insulating plate 30 at the bottom of the magnet case 23 is fastened to the case 40 by bolts 24d.

[0031] Bolts 24a and 24d that fasten insulating plate 30 to case 40, and bolt 24c that fastens magnet case 23 to case 40, are both made of a high-performance thermoplastic resin called PEEK (Poly Ether Ether Ketone) to prevent current flow. As shown in FIG. 4 , bolt 24a has a through hole 25 to allow air (gas) trapped in an air reservoir 26 formed at the bottom of the bolt hole to be discharged. Bolts 24b, 24c, and 24d also have through holes 25, just like bolt 24a.

[0032] (External Structure of Target Electrode) The external structure of the target electrode used in the magnetron sputtering apparatus of the embodiment will be described with reference to Figures 5 and 6. Figure 5 is an external perspective view showing an example of a target electrode used in the magnetron sputtering apparatus of the embodiment. Figure 6 is a top view of the target electrode shown in Figure 5.

[0033] The target 20 is exposed on the upper surface (positive side of the Y axis) of the target electrode 50. The outer periphery of the target 20 is held in the case 40 via an insulating plate 30 (see FIG. 3). The target 20 faces the workpiece 14 (see FIG. 1) arranged in an opposing position.

[0034] The target 20 is fastened to a magnet case 23 (see FIG. 3) by a plurality of bolts 24b.

[0035] As shown in Fig. 6 , insulating plates 30 are installed between the outer periphery of the target 20 and the case 40. All insulating plates 30 are made of plate material of the same thickness, and two insulating plates 30ea, 30eb, 30ec, and 30ed are installed at each of the upper and lower ends (negative and positive sides of the Z axis) of the target 20 in Fig. 6 , for a total of four insulating plates. In addition, two insulating plates 30fa, 30fb, 30fc, and 30fd are installed at each of the left and right ends (negative and positive sides of the X axis) of the target 20 in Fig. 6 , for a total of four insulating plates.

[0036] The four insulating plates 30ea, 30eb, 30ec, and 30ed installed on the opposing side surfaces all have substantially the same shape (substantially congruent shapes).Furthermore, the four insulating plates 30fa, 30fb, 30fc, and 30fd installed on the opposing side surfaces all have substantially the same shape (substantially congruent shapes).

[0037] The insulating plates 30ea and 30eb are placed at the upper end (negative side of the Z axis) of the target 20 in Fig. 6, with a gap g2 between them. The insulating plates 30ec and 30ed are placed at the lower end (positive side of the Z axis) of the target 20 in Fig. 6, with a gap g6 between them.

[0038] Insulating plates 30fa and 30fb are placed at the left end (negative side of the X-axis) of target 20 in Fig. 6, with a gap g4 between them. Insulating plates 30fc and 30fd are placed at the right end (positive side of the X-axis) of target 20 in Fig. 6, with a gap g8 between them.

[0039] Furthermore, insulating plates 30ea and 30fa are placed at the upper left corner of target 20 in Fig. 6, with a gap g1 between them. Insulating plates 30eb and 30fc are placed at the upper right corner of target 20 in Fig. 6, with a gap g3 between them. Insulating plates 30ec and 30fb are placed at the lower left corner of target 20 in Fig. 6, with a gap g5 between them. Insulating plates 30ed and 30fd are placed at the lower right corner of target 20 in Fig. 6, with a gap g7 between them.

[0040] Gaps g1, g2, g3, g4, g5, g6, g7, and g8 all communicate with the interior of chamber 12 (see FIG. 1). Each of gaps g1 to g8 forms an exhaust flow path that exhausts air (gas) inside target electrode 50 into chamber 12. The exhaust flow path will be described in detail later (see FIG. 9).

[0041] (Internal structure of target electrode) The internal structure of the target electrode 50 used in the magnetron sputtering apparatus of the embodiment will be described with reference to Figures 7 and 8. Figure 7 is an external perspective view showing an example of the internal structure of the target electrode used in the magnetron sputtering apparatus of the embodiment. Figure 8 is a top view of the internal structure of the target electrode shown in Figure 7.

[0042] A plurality of insulating plates 30ea, 30eb, 30ec, and 30ed, each having approximately the same shape and thickness, are installed on the inner surface of the case 40 along the X-axis. The insulating plates 30ea, 30eb, 30ec, and 30ed are all fastened to the case 40 with bolts 24a.

[0043] 8, a gap g2 is formed along the Y axis between adjacent insulating plates 30ea and 30eb. A gap g6 is formed along the Y axis between adjacent insulating plates 30ec and 30ed. Gap g2 and gap g6 have approximately the same distance, and both gaps communicate with the interior of chamber 12 (see FIG. 1).

[0044] A plurality of insulating plates 30fa, 30fb, 30fc, and 30fd, each having substantially the same shape and thickness, are installed on the inner surface of the case 40 along the Z axis. Each of the insulating plates 30fa, 30fb, 30fc, and 30fd is fastened to the case 40 with bolts 24a.

[0045] 8 , a gap g4 is formed along the Y axis between adjacent insulating plates 30fa and 30fb. Furthermore, a gap g8 is formed along the Y axis between adjacent insulating plates 30fc and 30fd. Gap g4 and gap g8 have approximately the same distance, and both gaps communicate with the interior of chamber 12.

[0046] At the upper left corner along the Y axis of the inner surface of case 40, a gap g1 is formed between insulating plates 30ea and 30fa, along the Y axis. At the upper right corner along the Y axis of the inner surface of case 40, a gap g3 is formed between insulating plates 30eb and 30fc, along the Y axis. At the lower left corner along the Y axis of the inner surface of case 40, a gap g5 is formed between insulating plates 30ec and 30fb, along the Y axis. At the lower right corner along the Y axis of the inner surface of case 40, a gap g7 is formed between insulating plates 30ed and 30fd, along the Y axis. Gaps g1, g3, g5, and g7 all have a substantially constant size (width), and all of the gaps communicate with the interior of chamber 12.

[0047] Insulating plates 30a, 30b, 30c, and 30d are installed on the inner bottom surface of the case 40. The insulating plates 30a, 30b, 30c, and 30d are all fastened to the case 40 by bolts 24d.

[0048] The insulating plates 30a, 30b, 30c, and 30d have substantially the same shape and thickness. Although they are not completely congruent due to the presence of counterbore holes for bolt fastening and cutouts for attaching other components, the insulating plates 30a, 30b, 30c, and 30d are substantially congruent. The insulating plates 30b and 30c have substantially the same outer shape as the insulating plate 30a (or insulating plate 30d) when turned upside down.

[0049] 8, a gap g12 is formed between adjacent insulating plates 30a and 30b along the Z axis and the outer periphery of high-voltage application unit 31. A gap g14 is formed between adjacent insulating plates 30a and 30c along the X axis and the outer periphery of cooling water channel 32. A gap g17 is formed between adjacent insulating plates 30c and 30d along the Z axis and the outer periphery of high-voltage application unit 31. A gap g15 is formed between adjacent insulating plates 30b and 30d along the X axis and the outer periphery of cooling water channel 33.

[0050] Furthermore, a gap g9 is formed between insulating plate 30a and insulating plate 30fa. A gap g13 is formed between insulating plate 30b and insulating plate 30fc. A gap g16 is formed between insulating plate 30c and insulating plate 30fb. A gap g18 is formed between insulating plate 30d and insulating plate 30fd. Gaps g9, g13, g16, and g18 all have a substantially constant size (width).

[0051] A gap g10 is formed between insulating plate 30a and insulating plate 30ea. A gap g11 is formed between insulating plate 30b and insulating plate 30eb. A gap g19 is formed between insulating plate 30c and insulating plate 30ec. A gap g20 is formed between insulating plate 30d and insulating plate 30ed. Gaps g10, g11, g19, and g20 all have a substantially constant size (width).

[0052] A circular gap g21 is formed between the insulating plates 30a, 30b, 30c, and 30d and the high voltage application unit 31 (see FIG. 2).

[0053] 8 are all interconnected. Therefore, any point within gaps g1 to g21 can be connected to the interior of chamber 12 by following each gap.

[0054] (Exhaust path of residual gas) An exhaust path of air (gas) remaining inside the target electrode 50 will be described with reference to Fig. 9. Fig. 9 is a diagram showing an exhaust path of residual gas in the target electrode used in the magnetron sputtering apparatus of the embodiment.

[0055] The gaps g1 to g21 are in communication with one another, and each gap is in communication with the interior of the chamber 12.

[0056] Specifically, gap g12 formed in the inner bottom surface of case 40 communicates with gaps g10 and g11 formed at the boundary between the inner bottom surface and the inner side surface of case 40. Gap g14 formed in the inner bottom surface of case 40 communicates with gaps g9 and g16 formed at the boundary between the inner bottom surface and the inner side surface of case 40. Gap g15 formed in the inner bottom surface of case 40 communicates with gaps g13 and g18 formed at the boundary between the inner bottom surface and the inner side surface of case 40. Gap g17 formed in the inner bottom surface of case 40 communicates with gaps g19 and g20 formed at the boundary between the inner bottom surface and the inner side surface of case 40. Furthermore, gaps g12, g14, g15, and g17 communicate with circular gap g21.

[0057] Gaps g10 and g11 formed at the boundary between the inner bottom surface and inner side surface of case 40 communicate with gaps g1, g2, and g3 formed on the inner surface of case 40, respectively, and are connected to the inside of chamber 12. That is, an exhaust flow path R1 is formed through which air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through gap g1. Also, an exhaust flow path R4 is formed through which air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through gap g2. Furthermore, an exhaust flow path R6 is formed through which air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through gap g3.

[0058] Furthermore, gaps g9 and g16 formed at the boundary between the inner bottom surface and the inner side surface of the case 40 communicate with gaps g1, g4, and g5 formed on the inner surface of the case 40, respectively, and are connected to the inside of the chamber 12. That is, an exhaust flow path R1 is formed through which air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through gap g1. Also, an exhaust flow path R2 is formed through which air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through gap g4. Furthermore, an exhaust flow path R3 is formed through which air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through gap g5.

[0059] Furthermore, gaps g13 and g18 formed at the boundary between the inner bottom surface and the inner side surface of case 40 communicate with gaps g3, g8, and g7 formed on the inner surface of case 40, respectively, and are connected to the inside of chamber 12. That is, an exhaust flow path R6 is formed through which air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through gap g3. Also, an exhaust flow path R7 is formed through which air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through gap g8. Furthermore, an exhaust flow path R8 is formed through which air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through gap g7.

[0060] Furthermore, gaps g19 and g20 formed at the boundary between the inner bottom surface and inner side surface of case 40 communicate with gaps g5, g6, and g7 formed on the inner surface of case 40, respectively, and are connected to the inside of chamber 12. That is, an exhaust flow path R3 is formed through which air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through gap g5. Also, an exhaust flow path R5 is formed through which air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through gap g6. Furthermore, an exhaust flow path R8 is formed through which air (gas) remaining inside the target electrode 50 is discharged into the chamber 12 through gap g7.

[0061] In this way, the target electrode 50 of this embodiment can promote the exhaust of air (gas) remaining inside the electrode, thereby preventing local abnormal discharge inside the electrode due to the remaining gas.

[0062] Although the present embodiment has been described with reference to an example of a magnetron sputtering apparatus 10 that sputters a workpiece 14, the scope of application of the present disclosure is not limited to this. The present disclosure can also be applied to, for example, a so-called plasma processing apparatus that uses plasma generated inside a chamber 12 to modify or clean the surface of a workpiece placed at the position of the target 20 described in the embodiment.

[0063] (Target Electrode of Comparative Example) A target electrode 50a of a comparative example will be described with reference to Fig. 10. Fig. 10 is a cross-sectional view showing an example of a schematic configuration of a target electrode provided in a magnetron sputtering apparatus of a comparative example.

[0064] Unlike the target electrode 50 (see FIG. 2 ) provided in the magnetron sputtering apparatus 10 of the embodiment, the target electrode 50 a of the comparative example includes an integrated insulating plate 35. That is, the insulating plate 35 is installed so as to integrally cover the inner bottom surface and inner side surface of the case 40.

[0065] When such an integrated insulating plate 35 is provided, residual gas inside the target electrode 50a passes through minute gaps between the insulating plate 35 and the inner bottom and inner side surfaces of the case 40 and is exhausted into the chamber 12. Therefore, compared to the target electrode 50 described in the embodiment, the exhaust resistance is clearly larger and the exhaust efficiency is inferior. Therefore, there is a high possibility that gas will remain inside the target electrode 50a. Therefore, with the target electrode 50a of the comparative example, there is a high possibility that local abnormal discharge will occur inside the electrode compared to the target electrode 50 of the embodiment.

[0066] (Operation and Effect of the Embodiment) As described above, the magnetron sputtering apparatus 10 of the embodiment includes the target 20 that emits particles to be deposited, all of which are housed inside the chamber 12; the magnet 22 that is installed facing the back side of the target 20; the magnet case 23 that houses the magnet 22; the high-voltage application unit 31 that applies a high voltage to the target 20 via the magnet 22; the case 40 (holding member) that houses the target 20, the magnet 22, the magnet case 23, and the high-voltage application unit 31 so that the surface of the target 20 is exposed and forms the target electrode 50; and the magnet 22. The chamber 12 is provided with an insulating plate 30, which is a plurality of plates arranged between the bottom and side surfaces of the magnet 22 and the inner wall of the case 40, with gaps (g1 to g21) that cross the bottom surface of the magnet 22, pass through the side surfaces of the magnet 22, and communicate with the interior of the chamber 12, and a treated material 14, which is placed facing the target 20, and on which a film is formed by particles knocked off the surface of the target 20 when an inert gas supplied to the chamber 12 is ionized by a high voltage generated by a high-voltage application unit 31 and caused to collide with the surface of the target 20. The gaps (g1 to g21) form an exhaust flow path for residual air (gas). This facilitates exhaust of air (gas) from inside the target electrode 50, thereby reducing the occurrence of local abnormal discharge inside the target electrode 50.

[0067] In the magnetron sputtering apparatus 10 of the embodiment, the gaps (g1 to g21) are each formed to have a substantially uniform size (width). Therefore, the exhaust resistance in each gap (g1 to g21) is uniform, which facilitates exhaust.

[0068] In the magnetron sputtering apparatus 10 of the embodiment, the plate materials constituting the insulating plate 30 all have the same thickness, which improves the productivity of the insulating plate.

[0069] Furthermore, in the magnetron sputtering apparatus 10 of the embodiment, the multiple insulating plates (30a, 30b, 30c, 30d) installed on the bottom of the magnet 22 all have substantially the same shape, and the multiple insulating plates (30ea, 30eb, 30ec, 30ed) and the multiple insulating plates (30fa, 30fb, 30fc, 30fd) installed on opposing side surfaces of the magnet 22 all have substantially the same shape. Therefore, since the shapes of the insulating plates are limited, productivity of the insulating plates can be improved.

[0070] Although the embodiments of the present invention have been described above, the above-described embodiments are presented as examples and are not intended to limit the scope of the present invention. This novel embodiment can be embodied in various other forms. Furthermore, various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. Furthermore, this embodiment is included within the scope and spirit of the invention, and is also included in the scope of the invention and its equivalents as defined in the claims.

[0071] REFERENCE SIGNS LIST 10 magnetron sputtering device 12 chamber 13 positive electrode 14 material to be processed 15 DC power supply 16 gas supply path 17 exhaust path 18 target particles 20 target 22 magnet 23 magnet case 24a, 24b, 24c, 24d bolt 25 through hole 26 air reservoir 30, 30a, 30b, 30c, 30d, 30ea, 30eb, 30ec, 30ed, 30fa, 30fb, 30fc, 30fd insulating plate 31 high voltage application unit 32, 33 cooling water path 40 case (holding member) 50, 50a target electrode g1, g2, g3, g4, g5, g6, g7, g8, g9, g10, g11, g12, g13, g14, g15, g16, g17, g18, g19, g20, g21 Gap R1, R2, R3, R4, R5, R6, R7, R8 Exhaust flow path

Claims

1. A magnetron sputtering apparatus comprising: a target that emits particles to be deposited, all of which are housed inside a chamber; a magnet installed facing the back side of the target; a magnet case that houses the magnet and a high-voltage application unit that applies a high voltage to the target via the magnet; a holding member that houses the target, the magnet, the magnet case, and the high-voltage application unit so that the surface of the target is exposed and forms a target electrode; an insulating plate that is arranged between the bottom and side surfaces of the magnet and the inner wall of the holding member, with a gap that crosses the bottom surface of the magnet, passes through the side surface of the magnet, and communicates with the inside of the chamber; and a workpiece that is installed in a position facing the target and on which a film is deposited by particles that are knocked off the surface of the target when inert gas supplied inside the chamber is ionized by the high voltage generated by the high-voltage application unit and caused to collide with the surface of the target, wherein the gap forms an exhaust flow path for residual air (gas).

2. The magnetron sputtering device according to claim 1, wherein the gaps are formed to have a substantially uniform size.

3. The magnetron sputtering device according to claim 1, wherein the insulating plates are made of plate materials all having the same thickness.

4. The magnetron sputtering apparatus according to claim 1, wherein the insulating plates installed on the bottom of the magnet have substantially the same shape, and the insulating plates installed on opposing sides of the magnet have substantially the same shape.

Images