Plasma processing device, method for manufacturing electrostatic chuck, and method for regenerating electrostatic chuck

Abstract

A plasma processing device comprises: a plasma processing chamber; an electrostatic chuck disposed in the plasma processing chamber and containing alumina; a gas supply unit; a plasma generation unit; and a control unit. The control unit is configured to execute control including: (a) control of bringing, in the plasma processing chamber, a trimethylaluminum-containing gas supplied by using the gas supply unit into contact with the electrostatic chuck to deposit a trimethylaluminum-containing film on the electrostatic chuck; and (b), after the (a), control of bringing, in the plasma processing chamber, an O2 plasma generated by using the gas supply unit and the plasma generation unit into contact with the trimethylaluminum-containing film to form an alumina-containing film on the electrostatic chuck.

Description

Plasma processing apparatus, electrostatic chuck manufacturing method, and electrostatic chuck regeneration method

[0001] Exemplary embodiments of the present disclosure relate to a plasma processing apparatus, a method for manufacturing an electrostatic chuck, and a method for regenerating an electrostatic chuck.

[0002] Japanese Patent Application Laid-Open No. 2003-144222 discloses a technique relating to a semiconductor manufacturing apparatus that can improve productivity.

[0003] JP 2009-79667 A

[0004] The present disclosure provides techniques for repairing the surface of an electrostatic chuck.

[0005] In one exemplary embodiment of the present disclosure, a plasma processing method includes: a plasma processing chamber; an electrostatic chuck disposed in the plasma processing chamber; a gas supply unit; a plasma generating unit; and a controller, wherein the controller performs the steps of: (a) controlling the gas supply unit to supply an organoaluminum-containing gas into the plasma processing chamber to deposit an organoaluminum-containing film on the electrostatic chuck; and (b) after step (a), controlling the gas supply unit to supply an organoaluminum-containing gas into the plasma processing chamber to deposit an organoaluminum-containing film on the electrostatic chuck. ２ The gas supply unit and the plasma generation unit are controlled to generate plasma, ２ and forming an alumina-containing film on the electrostatic chuck by contacting a plasma with the organoaluminum-containing film.

[0006] According to one exemplary embodiment of the present disclosure, a technique for repairing the surface of an electrostatic chuck can be provided.

[0007] 15 is a diagram for explaining an example of the configuration of a plasma processing system. FIG. 16 is a diagram for explaining an example of the configuration of an inductively coupled plasma processing apparatus. FIG. 17 is a plan view for explaining an example of the configuration of an electrostatic chuck. FIG. 18 is a diagram for explaining an example of the configuration of an electrostatic chuck. FIG. 19 is a flowchart showing an example of the present processing method. FIG. 19 is a diagram showing an example of the cross-sectional structure of an electrostatic chuck after process ST1 has been performed. FIG. 20 is a diagram showing an example of the cross-sectional structure of an electrostatic chuck 1111 after process ST2 has been performed. FIG. 21 is a diagram showing an example of the cross-sectional structure of an electrostatic chuck 1111 after process ST3 has been performed. FIG. 22 is a plan view showing an example of a mask member MK that can be used when performing the present processing method. FIG. 23 is a diagram showing an example of a case where the present processing method is performed using the mask member MK of FIG. 9. FIG. 24 is a plan view showing another example of a case where the mask member MK of FIG. 11 is used when performing the present processing method. FIG. 25 is a diagram showing an example of a case where the present processing method is performed using the mask member MK of FIG. 13. FIG. 26 is a flowchart showing a modified example of the present processing method. FIG. 27 is a plan view for explaining an example of an arrangement of heaters that can be used when performing the processing method shown in FIG. 25.

[0008] Hereinafter, each embodiment of the present disclosure will be described.

[0009] In one exemplary embodiment, a method for depositing an organoaluminum-containing film on the electrostatic chuck includes a plasma processing chamber, a gas supply unit, a plasma generating unit, and a controller, the controller controlling the gas supply unit to supply an organoaluminum-containing gas into the plasma processing chamber, and depositing an organoaluminum-containing film on the electrostatic chuck after step (a). ２ The gas supply unit and the plasma generation unit are controlled to generate plasma, ２ and forming an alumina-containing film on the electrostatic chuck by contacting a plasma with the organoaluminum-containing film.

[0010] In one exemplary embodiment, the control unit is configured to repeat (a) and (b) above.

[0011] In one exemplary embodiment, the electrostatic chuck has a first zone including a first heater and a second zone including a second heater, and the control unit is configured to perform, between (a) and (b), (c) a step of controlling the first heater to heat the first zone of the electrostatic chuck, thereby removing an organoaluminum-containing film deposited on the first zone of the electrostatic chuck, and in (b), the alumina-containing film is selectively formed on the second zone of the electrostatic chuck.

[0012] In one exemplary embodiment, the control unit is configured to control the first heater in (c) to heat the first zone of the electrostatic chuck to 200° C. or higher.

[0013] In one exemplary embodiment, the control unit is configured to perform a step of placing a mask member on the electrostatic chuck before step (a), wherein the electrostatic chuck has one or more shielding portions covered by the mask member and one or more exposed portions not covered by the mask member, and steps (a) and (b) are performed with the mask member placed on the electrostatic chuck, thereby selectively forming the alumina-containing film on the one or more exposed portions of the electrostatic chuck.

[0014] In one exemplary embodiment, the electrostatic chuck has a plurality of protrusions on a surface thereof, and the mask member is configured such that an upper surface of each of the plurality of protrusions corresponds to the one or more exposed portions.

[0015] In one exemplary embodiment, the electrostatic chuck has a central portion, an intermediate portion surrounding the central portion, and an outer peripheral portion surrounding the intermediate portion, and the mask member is configured such that at least one of the central portion, the intermediate portion, and the outer peripheral portion corresponds to the one or more exposed portions.

[0016] In one exemplary embodiment, the plasma processing apparatus further includes a base having a coolant flow path and a chiller unit configured to supply a coolant to the coolant flow path, and the control unit is configured to control the chiller unit in (a) above to maintain the coolant at 0°C or below.

[0017] In one exemplary embodiment, a method for depositing an organoaluminum-containing film on the electrostatic chuck includes the steps of: (a) providing an electrostatic chuck; (b) supplying an organoaluminum-containing gas to the electrostatic chuck to deposit an organoaluminum-containing film on the electrostatic chuck; and (c) after step (b), ２ and contacting a plasma with the organoaluminum-containing film to form an alumina-containing film on the electrostatic chuck.

[0018] In one exemplary embodiment, (b) and (c) above are repeated.

[0019] In one exemplary embodiment, the method for manufacturing the electrostatic chuck further includes, between steps (b) and (c), (d) heating the first zone of the electrostatic chuck to remove the organoaluminum-containing film deposited on the first zone of the electrostatic chuck, and in step (b), the alumina-containing film is selectively formed on the second zone of the electrostatic chuck.

[0020] In one exemplary embodiment, steps (b) and (c) are performed with a mask member disposed on the electrostatic chuck, thereby selectively forming the alumina-containing film on one or more exposed portions of the electrostatic chuck that are not covered by the mask member.

[0021] In one exemplary embodiment, the electrostatic chuck has a plurality of protrusions on a surface thereof, and the mask member is configured such that an upper surface of each of the plurality of protrusions corresponds to the one or more exposed portions.

[0022] In one exemplary embodiment, the electrostatic chuck has a central portion, an intermediate portion surrounding the central portion, and an outer peripheral portion surrounding the intermediate portion, and the mask member is configured such that at least one portion selected from the group consisting of the central portion, the intermediate portion, and the outer peripheral portion corresponds to the one or more exposed portions.

[0023] In one exemplary embodiment, a method for depositing an organoaluminum-containing film on the electrostatic chuck includes the steps of: (a) providing an electrostatic chuck; (b) supplying an organoaluminum-containing gas to the electrostatic chuck to deposit an organoaluminum-containing film on the electrostatic chuck; and (c) after step (b), ２ contacting a plasma with the organoaluminum-containing film to form an alumina-containing film on the electrostatic chuck.

[0024] In one exemplary embodiment, (b) and (c) above are repeated.

[0025] In one exemplary embodiment, the method for regenerating an electrostatic chuck further includes, between steps (b) and (c), (d) heating the first zone of the electrostatic chuck to remove the organoaluminum-containing film deposited on the first zone of the electrostatic chuck, and in step (b), the alumina-containing film is selectively formed on the second zone of the electrostatic chuck.

[0026] In one exemplary embodiment, steps (b) and (c) are performed with a mask member disposed on the electrostatic chuck, thereby selectively forming the alumina-containing film on one or more exposed portions of the electrostatic chuck that are not covered by the mask member.

[0027] In one exemplary embodiment, the electrostatic chuck has a plurality of protrusions on a surface thereof, and the mask member is configured such that an upper surface of each of the plurality of protrusions corresponds to the one or more exposed portions.

[0028] In one exemplary embodiment, the electrostatic chuck has a central portion, an intermediate portion surrounding the central portion, and an outer peripheral portion surrounding the intermediate portion, and the mask member is configured such that at least one portion selected from the group consisting of the central portion, the intermediate portion, and the outer peripheral portion corresponds to the one or more exposed portions.

[0029] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are designated by the same reference numerals, and redundant explanations will be omitted. Unless otherwise specified, the positional relationships, such as up, down, left, and right, will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0030] <Example of Plasma Processing System> FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a load port, an atmospheric transfer module, a load lock module, a vacuum transfer module, a plasma processing device 1, and a control unit 2. The load port, atmospheric transfer module, load lock module, and vacuum transfer module are not shown in the figure. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0031] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma generated in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0032] The controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The controller 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0033] An example of the configuration of an inductively coupled plasma processing apparatus will be described below as an example of the plasma processing apparatus 1. FIG. 2 is a diagram illustrating the configuration of an inductively coupled plasma processing apparatus. The inductively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing chamber 10 includes a dielectric window 101. The plasma processing apparatus 1 also includes a substrate support 11, a gas inlet unit, and an antenna 14. The substrate support 11 is disposed within the plasma processing chamber 10. The antenna 14 is disposed on or above the plasma processing chamber 10 (i.e., on or above the dielectric window 101). The plasma processing chamber 10 has a plasma processing space 10s defined by the dielectric window 101, a sidewall 102 of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded.

[0034] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0035] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a bias electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Alternatively, an RF or DC electrode may be disposed within the ceramic member 1111a, in which case the RF or DC electrode functions as a bias electrode. Note that both the conductive member of the base 1110 and the RF or DC electrode may function as two bias electrodes.

[0036] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0037] The substrate support 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. In one embodiment, the plasma processing apparatus 1 includes a chiller unit configured to supply a coolant to the flow path 1110a. In one embodiment, the chiller unit may include a temperature adjustment device and a pump. For example, the chiller unit may be configured to adjust the coolant flowing into the chiller unit to a predetermined temperature before supplying the coolant to the flow path 1110a. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the central region 111a.

[0038] The gas inlet is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. In one embodiment, the gas inlet includes a center gas injector (CGI) 13. The center gas injector 13 is disposed above the substrate support 11 and attached to a central opening formed in the dielectric window 101. The center gas injector 13 has at least one gas supply port 13a, at least one gas flow path 13b, and at least one gas inlet port 13c. The process gas supplied to the gas supply port 13a passes through the gas flow path 13b and is introduced into the plasma processing space 10s from the gas inlet port 13c. Note that the gas inlet may include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 102 in addition to or instead of the center gas injector 13.

[0039] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the gas inlet through a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0040] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to at least one bias electrode and the antenna 14. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generating unit 12. Furthermore, by supplying a bias RF signal to the at least one bias electrode, a bias potential is generated on the substrate W, thereby attracting ions in the formed plasma to the substrate W.

[0041] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to the antenna 14 via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 14.

[0042] The second RF generator 31b is coupled to at least one bias electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one bias electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0043] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a bias DC generator 32a. In one embodiment, the bias DC generator 32a is connected to at least one bias electrode and configured to generate a bias DC signal. The generated bias DC signal is applied to the at least one bias electrode.

[0044] In various embodiments, the bias DC signal may be pulsed. In this case, a sequence of DC-based voltage pulses is applied to at least one bias electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the bias DC generator 32a and at least one bias electrode. Thus, the bias DC generator 32a and the waveform generator constitute a voltage pulse generator. The voltage pulses may have positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. Note that the bias DC generator 32a may be provided in addition to the RF power supply 31 or may be provided instead of the second RF generator 31b.

[0045] The antenna 14 includes one or more coils. In one embodiment, the antenna 14 may include an outer coil and an inner coil arranged coaxially. In this case, the RF power supply 31 may be connected to both the outer coil and the inner coil, or to either the outer coil or the inner coil. In the former case, the same RF generator may be connected to both the outer coil and the inner coil, or separate RF generators may be connected to the outer coil and the inner coil separately.

[0046] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0047] 3 and 4 are diagrams for explaining a configuration example of the electrostatic chuck 1111. FIG. 3 is a diagram showing an example of the electrostatic chuck 1111 as viewed from above. In one embodiment, the electrostatic chuck 1111 may include a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a may contain alumina. That is, the ceramic member 1111a may be formed of alumina ceramics.

[0048] The ceramic member 1111a may have a generally cylindrical shape and may include an upper surface 200, a plurality of protrusions 201, a sealing band 202, and an annular region 111b.

[0049] The upper surface 200 may be a circular horizontal surface and may have a center on the central axis of the ceramic member 1111a.

[0050] The plurality of protrusions 201 may be configured to support the back surface of the substrate W when the substrate is electrostatically attracted to the electrostatic chuck 1111. The plurality of protrusions 201 may be arranged on the upper surface 200. Each protrusion 201 may protrude upward from the upper surface 200. Each protrusion 201 may have a substantially hemispherical shape with the highest point at the center. The protrusions 201 may be integral with the upper surface 200 or may be separate from the upper surface 200. The protrusions 201 may be made of a different material from that of the upper surface 200.

[0051] The plurality of protrusions 201 may be formed by machining and / or laser processing the surface of the ceramic member 1111a. Alternatively, the plurality of protrusions 201 may be formed by adhering pre-formed protrusions to the surface of the ceramic member 1111a. When laser processing is used, the plurality of protrusions 201 may be formed by using laser light to remove a portion of the upper surface 200 of the ceramic member 1111a, for example, an area where the protrusions 201 are not to be formed.

[0052] The protrusions 201 may have a height in the range of 5 μm to 50 μm, and a width (outer diameter) in the range of 0.1 mm to 3 mm.

[0053] The multiple protrusions 201 may be arranged at intervals (pitch) within a range of 3 mm or more and 30 mm or less. The multiple protrusions 201 may be evenly arranged on the upper surface 200. The multiple protrusions 201 may be arranged concentrically, radially, or in a lattice pattern relative to the center of the upper surface 200.

[0054] The upper surface 200 and the plurality of protrusions 201 may each independently be made of a crystalline material or may each independently be made of a non-crystalline (amorphous) material. Also, the upper surface 200 and the plurality of protrusions 201 may each independently be made of both a crystalline material and an amorphous material. As an example, the crystalline material may be crystalline alumina (Al ２ O ３ ) As an example, the amorphous material may be amorphous alumina (Al ２ O ３ ) may be.

[0055] As shown in FIGS. 3 and 4 , the seal band 202 may protrude upward from the upper surface 200 and be arranged in an annular shape around the outer periphery of the upper surface 200. The seal band 202 may be configured to come into contact with the back surface of the outer periphery of the substrate W when the substrate W is electrostatically attracted to the electrostatic chuck 1111. The seal band 202 may have the same height as the protrusions 201, or may have a height greater than or smaller than the protrusions 201. The seal band 202 may be an example of a plurality of protrusions. That is, the seal band 202 may be made of a crystalline material and / or an amorphous material, similar to the protrusions 201. The annular region 111b may be arranged in an annular shape around the outer periphery of the seal band 202. The annular region 111b may have the same height as the protrusions 201, or may have a height greater than or smaller than the protrusions 201. The annular region 111b may be configured to support the ring assembly 112. The annular region 111b, like the protrusion 201, may be composed of a crystalline material and / or an amorphous material.

[0056] A gas outlet 300 through which a heat transfer gas flows out may be formed on the upper surface 200. As shown in Fig. 4, the gas outlet 300 may be connected to a heat transfer gas supply unit 302 through a gas passage 301. The gas passage 301 may pass through the inside of the substrate support 11. The heat transfer gas supply unit 302 may be provided outside the plasma processing chamber 10. One or more gas outlets 300 may be arranged. The heat transfer gas may include helium gas.

[0057] The electrostatic electrode 1111b may be connected to a direct current (DC) power supply 311 via a switch 310. When a DC voltage from the DC power supply 311 is applied to the electrostatic electrode 1111b, an electrostatic attractive force (Coulomb force) may be generated between the ceramic member 1111a and the substrate W. The substrate W may be attracted to the ceramic member 1111a by the electrostatic attractive force and may be adsorbed and held on the ceramic member 1111a.

[0058] <Example of Plasma Processing Method> FIG. 5 is a flowchart showing an example of a plasma processing method (hereinafter also referred to as "this processing method") according to an illustrative embodiment. As shown in FIG. 5 , this processing method includes a step ST1 of processing a substrate, a step ST2 of depositing a trimethylaluminum (an example of organoaluminum, hereinafter also referred to as "TMA")-containing film, a step ST3 of forming an alumina-containing film, and a determination step ST4. Note that step ST1 may or may not be performed. Also, step ST4 may or may not be performed. As an example, when steps ST1, ST2, ST3, and ST4 are performed, this processing method may be performed as a method for manufacturing an electrostatic chuck / a method for regenerating an electrostatic chuck. The method for manufacturing an electrostatic chuck may be performed, for example, as a method for manufacturing an electrostatic chuck having a second surface condition from an electrostatic chuck having a first surface condition. In one embodiment, the electrostatic chuck manufacturing method / electrostatic chuck regeneration method may include (i) a step of attaching an electrostatic chuck having a first surface condition (a so-called used electrostatic chuck that has already been used in another plasma processing apparatus) to the plasma processing apparatus 1 before step ST1 or step ST2, and / or (ii) a step of removing the electrostatic chuck having a second surface condition after step ST4. In one embodiment, the processing in each step may be performed in the plasma processing apparatus 1 shown in FIG. 2 . Hereinafter, an example will be described in which a controller 2 controls each part of the plasma processing apparatus 1 to perform this processing method on a substrate W.

[0059] (Process ST1: Processing Substrate) In process ST1, a substrate W is processed. In one embodiment, a plurality of substrates W are processed in process ST1. In one embodiment, the processing includes etching of the substrates W. Hereinafter, an example will be described in which the substrates W are etched in process ST1.

[0060] First, as shown in Fig. 2, the substrate W is carried into the plasma processing chamber 10 and placed on the substrate support 11. The substrate W is attracted and held by the electrostatic chuck 1111 as shown in Fig. 4. At this time, the substrate W is placed on the ceramic member 1111a, and the back surface of the substrate W contacts the protrusions 201 and the seal band 202. A DC voltage is applied to the electrostatic electrode 1111b, generating an electrostatic attractive force between the electrostatic chuck 1111 and the substrate W, and the substrate W is attracted to the electrostatic chuck 1111.

[0061] In the substrate support part 11 shown in FIG. 2, a coolant is supplied to the coolant flow path 1110 a to adjust the temperature of the electrostatic chuck 1111 and the substrate W held by the electrostatic chuck 1111 .

[0062] 4 is supplied to the gas outlet 300, and the heat transfer gas is supplied from the gas outlet 300 to the space formed between the substrate W and the upper surface 200. The heat transfer gas controls the temperature of the substrate W from its rear surface side.

[0063] 2 to the shower head 13, and then supplied to the plasma processing space 10s from the shower head 13. The processing gas supplied at this time includes a gas that generates activated species necessary for etching the substrate W.

[0064] One or more RF signals are supplied to the upper electrode and / or the lower electrode from the RF power supply 31. The atmosphere in the plasma processing space 10s is exhausted through the gas exhaust port 10e, and the inside of the plasma processing space 10s may be depressurized. In this way, plasma is generated on the substrate support 11 in the plasma processing space 10s, and the substrate W is etched.

[0065] FIG. 6 is a diagram showing an example of the cross-sectional structure of the electrostatic chuck 1111 after step ST1 is performed. In step ST1, frictional wear may occur between the protrusions 201 and the rear surface of the substrate W. Furthermore, the surface condition of the ceramic member 1111a may change due to corrosion caused by the processing gas during etching. For example, the change in the surface condition may include a decrease in the thickness of the protrusions 201 (see region R1 in FIG. 6 ) or surface roughness of the protrusions 201 (see region R2 in FIG. 6 ). If the thickness of the protrusions 201 decreases, the attraction force of the electrostatic chuck 1111 to the substrate W may increase excessively. If the attraction force increases excessively, the temperature of the substrate W tends to decrease, and the substrate W tends to become more difficult to separate from the electrostatic chuck 1111 due to residual attraction. Furthermore, such a change in the surface condition may lead to an increase in the contact thermal resistance between the electrostatic chuck 1111 and the substrate W. Furthermore, when the substrate W is removed from the electrostatic chuck 1111 after processing, discharge may occur to the electrostatic chuck 1111 due to residual charges on the substrate W. Such discharge may damage the ceramic member 1111 a. In this processing method, the above-mentioned tendency can be eliminated by performing step ST2 and subsequent steps described below.

[0066] (Step ST2: Depositing a TMA-Containing Film) In step ST2, the gas supply unit 20 is controlled to supply a trimethylaluminum-containing gas into the plasma processing chamber 10. The trimethylaluminum-containing gas is an example of an organic aluminum-containing gas. In one embodiment, the organic aluminum-containing gas may be an alkyl aluminum such as triethylaluminum or triisobutylaluminum. This deposits a trimethylaluminum-containing film 201a on the electrostatic chuck 1111. For example, in the plasma processing chamber 10, the trimethylaluminum-containing gas supplied using the gas supply unit 20 is brought into contact with the electrostatic chuck 1111 to deposit the trimethylaluminum-containing film 201a on the electrostatic chuck 1111. FIG. 7 is a diagram showing an example of the cross-sectional structure of the electrostatic chuck 1111 after step ST2 is performed. In the example of FIG. 7, the trimethylaluminum-containing film 201a is deposited on the protrusions 201 whose thickness was reduced in FIG. 6. The combined thickness of the protrusions 201 and the trimethylaluminum-containing film 201a may be equivalent to the thickness of the protrusions 201 before step ST1 is performed. 7, a trimethylaluminum-containing film 201a is also deposited on the protrusions 201, which were rough in FIG. 6. The trimethylaluminum-containing film 201a can reduce the surface irregularities of the protrusions 201. In the example of FIG. 7, a trimethylaluminum-containing film 201a is also deposited on the upper surface 200. For example, even if the upper surface 200 is corroded by the process gas in step ST1 or if discharge damage due to residual charge on the substrate W occurs, the trimethylaluminum-containing film 201a can function as a protective film, thereby extending the service life of the electrostatic chuck 1111. Furthermore, for example, micro-dielectric breakdown or poor voltage resistance may occur in the electrostatic chuck 1111 after etching in step ST1. Therefore, protecting such damaged areas with the trimethylaluminum-containing film 201a can improve voltage resistance. Furthermore, on the surface of the electrostatic chuck 1111 after performing process ST1, particles may fall off (shed) from the particle interface due to physical damage (fracture) or damage (erosion) caused by corrosive gas, which may become a source of dust (particles).On the other hand, since the trimethylaluminum-containing gas used in this processing method can also deposit on damaged areas on the surface of the electrostatic chuck 1111 where particle shedding is likely to occur, the trimethylaluminum-containing film 201a can also contribute to particle suppression by protecting the particle interface and fixing particles that are likely to fall off at the interface between the electrostatic chuck 1111 and the trimethylaluminum-containing film 201a.

[0067] In one embodiment, in process ST2, the temperature of the electrostatic chuck 1111 may be maintained at 0° C. or lower (hereinafter also referred to as the “low temperature region”). In one embodiment, in process ST2, the temperature of the electrostatic chuck 1111 may be maintained in a range of 100° C. to 200° C. (hereinafter also referred to as the “high temperature region”). In one embodiment, in process ST2, the temperature of the electrostatic chuck 1111 may be maintained in a range that does not fall into either the low temperature region or the high temperature region, for example, may be maintained in a range greater than 0° C. and less than 100° C. For such temperature control, the temperature adjustment module described above may be used. For example, to achieve the low temperature region, the control unit 2 is configured to control the chiller unit in process ST2 to maintain the coolant flowing through the coolant flow path 1110a at 0° C. or lower. When process ST2 is performed in the low temperature region, the amount of trimethylaluminum-containing film 201a deposited on the electrostatic chuck 1111 tends to increase. Therefore, in the example of FIG. 6 , for the protrusion 201 where a reduction in thickness was observed (see region R1 in FIG. 6 ), performing step ST2 in a low-temperature region can efficiently increase the thickness of the protrusion 201. In this way, when steps ST2 and ST3 are performed in a low-temperature region, the number of cycles of steps ST2 to ST3 (see step ST4 described below) can be reduced. On the other hand, when step ST2 is performed in a high-temperature region, the amount of trimethylaluminum-containing film 201a deposited on the electrostatic chuck 1111 tends to decrease. Therefore, in the example of FIG. 6 , for the protrusion 201 where surface roughness was observed (see region R2 in FIG. 6 ), performing step ST2 in a high-temperature region can reduce the surface irregularities of the protrusion 201 without excessively increasing the thickness.

[0068] In one embodiment, the trimethylaluminum-containing gas may include an inert gas as a carrier gas, for example, a noble gas such as He, Ar, Ne, Kr, or Xe, or nitrogen gas.

[0069] (Step ST3: Forming an Alumina-Containing Film) In step ST3, O ２ The gas supply unit 20 and the plasma generation unit 12 are controlled to generate plasma, thereby forming an alumina-containing film 201b on the electrostatic chuck 1111. For example, in the plasma processing chamber 10, O 2 is generated using the gas supply unit 20 and the plasma generation unit 12. ２ The plasma is applied to the trimethylaluminum-containing film 201a to form an alumina-containing film 201b on the electrostatic chuck 1111. In one embodiment, the gas supply 20 supplies O ２ A containing gas may be supplied. ２ The containing gas may be supplied into the plasma processing chamber 10 from the gas supply unit 20 through the gas inlet 13c of the central gas injection unit 13. In one embodiment, the plasma generating unit 12 generates O 2 supplied into the plasma processing chamber 10 using the gas supply unit 20. ２ In one embodiment, a source RF signal is supplied to the antenna 14, which generates a high frequency electric field between the antenna 14 and the electrostatic chuck 1111, and generates a plasma from the containing gas. ２Plasma is generated from the containing gas. In one embodiment, a bias signal may be supplied to the electrostatic chuck 1111. In one embodiment, a bias signal does not need to be supplied to the electrostatic chuck 1111. The bias signal may be a bias RF signal supplied from the RF power supply 31 or a bias DC signal supplied from the DC power supply 32. In this case, a bias potential is generated between the plasma and the electrostatic chuck 1111. Active species such as ions and radicals in the plasma are attracted to the electrostatic chuck 1111, and the active species form the alumina-containing film 201b from the trimethylaluminum-containing film 201a. In one embodiment, the bias signal may have a power of 300 W or more and 1500 W or less, or may have a power of 300 W or more and 900 W or less. In one embodiment, the plasma generating unit 12 generates O 2 supplied to the outside of the plasma processing chamber 10 using the gas supply unit 20. ２ A plasma may be generated from the containing gas. In this case, O 2 is introduced into the plasma processing chamber 10 by a plasma supply means (not shown). ２ A so-called remote plasma method may be used, in which plasma is supplied.

[0070] 8 is a diagram showing an example of the cross-sectional structure of the electrostatic chuck 1111 after the step ST3 is performed. In the example of FIG. 8, the trimethylaluminum-containing film 201a deposited on the protrusions 201 in FIG. 7 has all been changed into an alumina-containing film 201b. ２The plasma can cause methyl groups in the trimethylaluminum-containing film 201a to be desorbed and the aluminum to be oxidized, thereby forming the alumina-containing film 201b. Because the ceramic member 1111a of the electrostatic chuck 1111 also contains alumina, the alumina-containing film 201b and the ceramic member 1111a have high affinity with each other, and they are easily integrated. Thus, the alumina-containing film 201b is less likely to be desorbed from the electrostatic chuck 1111, and the electrostatic chuck 1111 after step ST3 can be used for substrate processing as is, which can contribute to improving throughput. Note that if the alumina constituting the ceramic member 1111a is crystalline, the alumina-containing film 201b formed from the trimethylaluminum-containing film 201a deposited thereon also tends to be crystalline. Also, if the alumina constituting the ceramic member 1111a is amorphous, the alumina-containing film 201b formed from the trimethylaluminum-containing film 201a deposited thereon also tends to be amorphous. For example, after being exposed to plasma in step ST1, the alumina in the surface layer of the electrostatic chuck 1111 tends to become amorphous. When steps ST2 and ST3 are performed on such an electrostatic chuck 1111, the alumina-containing film 201b formed thereon tends to grow as amorphous alumina. In this case, compositional flow deformation tends to occur with a smaller force when the surface of the electrostatic chuck 1111 contacts the substrate W, resulting in reduced contact thermal resistance. Note that, if frictional wear between the surface of the electrostatic chuck 1111 and the substrate W increases, the amorphous alumina-containing film 201b may be pushed outward in the surface direction, exposing crystalline alumina disposed beneath the alumina-containing film 201b. Performing steps ST2 and ST3 here allows alumina to grow based on the crystalline state of the underlying layer, i.e., a crystalline alumina-containing film 201b grows, thereby suppressing excessive frictional wear.

[0071] (Step ST4: Determination Step) In step ST4, it is determined whether a given condition for terminating the present processing method is satisfied. In the present processing method, steps ST2 and ST3 may be repeated. The given condition may be that a cycle of steps ST2 to ST3 has been performed a predetermined number of times. The number of times may be once, less than five times, five or more times, or ten or more times. In step ST4, if it is determined that the given condition is not satisfied, the process returns to step ST2. If it is determined that the given condition is satisfied, the present processing method terminates. For example, the given condition may be a condition regarding the thickness of the alumina-containing film 201b at the end of step ST3. That is, at the end of step ST3, it may be determined whether the thickness of the alumina-containing film 201b has reached a given value or range, and the cycle of steps ST2 to ST3 may be repeated until the given value or range is reached. The thickness of the alumina-containing film 201b may be measured using an optical measurement device. The given condition may be, for example, the processing time for the steps ST and ST3. The operations at the end of this processing method include the source RF signal, the bias RF signal, the bias DC signal, the trimethylaluminum-containing gas, and the O ２ This may be the stopping of the supply of the containing gas.

[0072] <Example of Using a Mask Member> In this processing method, steps ST2 and ST3 may be performed with a mask member placed on the electrostatic chuck 1111. In one embodiment, the mask member may be appropriately selected from a metal material, an inorganic material, and an organic material. In one embodiment, the mask member is used to mask at least a portion of the electrostatic chuck 1111 with a trimethylaluminum-containing gas or O ２The electrostatic chuck 1111 is configured to prevent contact with the plasma. When the surface of the electrostatic chuck 1111 contacts the substrate W in step ST1, frictional wear may occur depending on the difference in linear expansion between them. In one embodiment, at the end of step ST1, the surface roughness of the multiple protrusions 201 on the electrostatic chuck 1111 may become significant. In one embodiment, at the end of step ST1, the thickness of the seal band 202 on the electrostatic chuck 1111 may become significantly reduced. As an example, when steps ST2 and ST3 are performed using a mask member, the trimethylaluminum-containing film 201a may be selectively deposited and the alumina-containing film 201b may be formed on portions of the surface of the electrostatic chuck 1111 where surface roughness or thickness reduction may occur. In this way, at the end of step ST1, portions of the electrostatic chuck 1111 where the surface condition has changed significantly may be selectively protected by the alumina-containing film 201b.

[0073] (Variation 1) FIG. 9 is a plan view showing an example of a mask member MK that can be used when performing the present processing method. FIG. 10 is a view showing an example of performing the present processing method using the mask member MK of FIG. 9. Before steps ST2 and ST3, the mask member MK is transferred into the plasma processing chamber 10 by the substrate processing system 1 and placed on the electrostatic chuck 1111. Accordingly, the control unit 2 controls the substrate processing system 1 to transfer the mask member MK into the plasma processing chamber 10 and place it on the electrostatic chuck 1111. In one embodiment, the mask member MK is stored in a storage container on a load port and transferred from the storage container into the plasma processing chamber 10 via an atmospheric transfer module, a load lock module, and a vacuum transfer module. In one embodiment, the mask member MK is stored in a first stocker attached to the atmospheric transfer module and transferred from the first stocker into the plasma processing chamber 10 via the atmospheric transfer module, the load lock module, and a vacuum transfer module. In this case, the first stocker is maintained in an atmospheric atmosphere. In one embodiment, the mask member MK is stored in a second stocker attached to a vacuum transfer module and transferred from the second stocker into the plasma processing chamber 10 via the vacuum transfer module. In this case, the second stocker is maintained in a vacuum atmosphere. In the example of FIGS. 9 and 10 , the mask member MK has multiple openings OP formed therein, through which steps ST2 and ST3 can be performed. The electrostatic chuck 1111 has one or more shielded portions (corresponding to portions of the mask member MK other than the openings OP) covered by the mask member MK and one or more exposed portions (corresponding to the openings OP) not covered by the mask member MK. In the example of FIGS. 9 and 10 , the multiple openings OP are formed to correspond to the positions of the three central protrusions 201 among the multiple protrusions 201 on the electrostatic chuck 1111. When step ST2 is performed in this state, a methylaluminum-containing film 201a can be selectively deposited on the three central protrusions 201 on the upper surface 200, the seal band 202, and the annular region 111b.Furthermore, when step ST3 is performed in this state, an alumina-containing film 201b can be selectively formed on the three central protrusions 201 of the upper surface 200, the seal band 202, and the annular region 111b. When steps ST2 and ST3 are performed in this manner, the three central protrusions 201 can be selectively protected by the alumina-containing film 201b while suppressing the influence on the surface conditions of the upper surface 200, the seal band 202, and the annular region 111b. Note that, for convenience of explanation, FIG. 10 illustrates the mask member MK separated from the electrostatic chuck 1111. On the other hand, in this modification, steps ST2 and ST3 can be performed with the mask member MK in contact with the electrostatic chuck 1111.

[0074] (Variation 2) FIG. 11 is a plan view showing another example in which a mask member MK is used when performing the present processing method. FIG. 12 is a diagram showing an example in which the present processing method is performed using the mask member MK of FIG. 11. In the examples of FIGS. 11 and 12, one opening OP is formed in the mask member MK, and steps ST2 and ST3 can be performed through the opening OP. As shown in FIG. 12, the electrostatic chuck 1111 may have, in its planar direction, a central portion A1, an intermediate portion A2 surrounding the central portion A1, and an outer peripheral portion A3 surrounding the intermediate portion A2. The central portion A1 may correspond to the upper surface 200 and the multiple protrusions 201. The intermediate portion A2 may correspond to the seal band 202. The outer peripheral portion A3 may correspond to the annular region 111b. In the examples of FIGS. 11 and 12, the opening OP is formed to correspond to the positions of the upper surface 200 and the multiple protrusions 201 of the electrostatic chuck 1111. When step ST2 is performed in this state, a methylaluminum-containing film 201a can be selectively deposited on the upper surface 200 and the plurality of protrusions 201 of the seal band 202 and the annular region 111b. Furthermore, when step ST3 is performed in this state, an alumina-containing film 201b can be selectively formed on the upper surface 200 and the plurality of protrusions 201 of the seal band 202 and the annular region 111b. When steps ST2 and ST3 are performed in this manner, the upper surface 200 and the plurality of protrusions 201 can be selectively protected by the alumina-containing film 201b while minimizing the influence on the surface conditions of the upper surface 200, the seal band 202, and the annular region 111b. For ease of explanation, FIG. 11 illustrates the mask member MK separated from the electrostatic chuck 1111. In this modification, steps ST2 and ST3 can be performed with the mask member MK in contact with the electrostatic chuck 1111.

[0075] (Variation 3) FIG. 13 is a plan view showing yet another example in which a mask member MK is used when performing this processing method. FIG. 14 is a view showing an example in which this processing method is performed using the mask member MK of FIG. 13. In the examples of FIGS. 13 and 14 , the mask member MK is formed in a disk shape, and steps ST2 and ST3 can be performed through the mask member MK. In the examples of FIGS. 11 and 12 , the mask member MK is formed to correspond to the positions of the upper surface 200 and the multiple protrusions 201 on the electrostatic chuck 1111. When step ST2 is performed in this state, a methylaluminum-containing film 201a can be selectively deposited on the seal band 202 and the annular region 111b of the upper surface 200 and the multiple protrusions 201. When step ST3 is further performed in this state, an alumina-containing film 201b can be selectively formed on the seal band 202 and the annular region 111b of the upper surface 200 and the multiple protrusions 201. In step ST1, a heat transfer gas such as helium gas may be circulated between the substrate W and the electrostatic chuck 1111. Here, if the thickness of the seal band 202 is reduced, the heat transfer gas tends to leak from the seal band 202. As described above, selectively protecting the seal band 202 and the annular region 111b with the alumina-containing film 201b can suppress the leakage of the heat transfer gas. For ease of explanation, FIG. 14 illustrates the mask member MK separated from the electrostatic chuck 1111. In this modification, steps ST2 and ST3 may be performed with the mask member MK in contact with the electrostatic chuck 1111.

[0076] (Variation 4) FIG. 15 is a flowchart illustrating a variation of the present processing method. As shown in FIG. 15 , the processing method of this variation includes step ST1 of processing a substrate, step ST2 of depositing a TMA-containing film, step ST2A of partially removing the TMA-containing film, step ST3 of forming an alumina-containing film, and step ST4 of determining the presence or absence of an alumina-containing film. Steps ST1, ST2, ST3, and ST4 in the processing method of this variation can be performed in the same manner as steps ST1, ST2, ST3, and ST4 described above with respect to the present processing method. Step ST2A can be performed between steps ST2 and ST3. In one embodiment, the electrostatic chuck 1111 may have a first zone including a first heater and a second zone including a second heater. In one embodiment, the set temperature of the first heater is higher than the set temperature of the second heater. In one embodiment, in step ST2A, the first heater may be controlled to heat the first zone of the electrostatic chuck 1111, thereby removing at least a portion of the methylaluminum-containing film 201a deposited on the first zone of the electrostatic chuck 1111. In this case, in the subsequent step ST3, the alumina-containing film 201b may be selectively formed on the second zone of the electrostatic chuck 1111. In this way, when step ST2A is performed between step ST2 and step ST3, the alumina-containing film 201b may be selectively formed in a region without requiring a mask member.

[0077] Fig. 16 is a plan view illustrating an example of heater arrangement that can be used when performing the processing method shown in Fig. 15. As shown in Fig. 16, the electrostatic chuck 1111 may have a boundary B1 surrounding a portion (in-plane central portion) of the upper surface 200, a boundary B2 along the outer edge of the upper surface 200, a boundary B3 along the outer edge of the seal band 202, and a boundary B4 along the outer edge of the outer periphery 111b.

[0078] In one embodiment, the electrostatic chuck 1111 may have one or more heaters in a ring-shaped region (hereinafter also referred to as "region R1") whose outer and inner circumferences are the boundary B4 and boundary B1, respectively. That is, by setting region R1 as a first zone and heating region R1 to 200° C. or higher, the trimethylaluminum-containing film 201a deposited in region R1 can be selectively removed. In this case, in the subsequent step ST3, an alumina-containing film 201b is formed from the trimethylaluminum-containing film 201a deposited in the region excluding region R1 (second zone), thereby selectively repairing the central portion of the upper surface 200.

[0079] In one embodiment, the electrostatic chuck 1111 may have one or more heaters in a ring-shaped region (hereinafter also referred to as "region R2") whose outer and inner circumferences are the boundary B4 and boundary B2, respectively. That is, by setting region R2 as a first zone and heating region R2 to 200° C. or higher, the trimethylaluminum-containing film 201 a deposited in region R2 can be selectively removed. In this case, in the subsequent step ST3, an alumina-containing film 201 b is formed from the trimethylaluminum-containing film 201 a deposited in the region excluding region R2 (second zone), thereby repairing the entire upper surface 200.

[0080] In one embodiment, the electrostatic chuck 1111 may have one or more heaters in a ring-shaped region (hereinafter also referred to as "region R3") whose outer and inner circumferences are the boundaries B4 and B3, respectively, and in a circular region (hereinafter also referred to as "region R4") whose outer circumference is the boundary B2. That is, by setting the regions R3 and R4 as a first zone and heating the regions R3 and R4 to 200° C. or higher, the trimethylaluminum-containing film 201 a deposited in the regions R3 and R4 can be selectively removed. In this case, in the subsequent step ST3, the alumina-containing film 201 b is formed from the trimethylaluminum-containing film 201 a deposited in the region excluding the regions R3 and R4 (the second zone), thereby selectively repairing the seal band 202.

[0081] In the above embodiment, an example in which the electrostatic chuck 1111 is used in an inductively coupled plasma apparatus has been described, but the present invention is not limited to this and may be used in other types of plasma apparatuses, such as a capacitively coupled plasma apparatus. The electrostatic chuck 1111 may also be used in a plasma apparatus equipped with a means for performing processing using remote plasma. Furthermore, the electrostatic chuck 1111 is not limited to plasma processing apparatuses and may also be used in other substrate processing apparatuses.

[0082] Embodiments of the present disclosure further include the following aspects.

[0083] (Supplementary Note 1) A method for depositing an organoaluminum-containing film on the electrostatic chuck, comprising: a plasma processing chamber; an electrostatic chuck disposed in the plasma processing chamber; a gas supply unit; a plasma generating unit; and a control unit, wherein the control unit performs the steps of: (a) controlling the gas supply unit to supply an organoaluminum-containing gas into the plasma processing chamber, thereby depositing an organoaluminum-containing film on the electrostatic chuck; and (b) after step (a), controlling the gas supply unit to supply an organoaluminum-containing gas into the plasma processing chamber, thereby depositing an organoaluminum-containing film on the electrostatic chuck. ２ The gas supply unit and the plasma generation unit are controlled to generate plasma, ２ forming an alumina-containing film on the electrostatic chuck by contacting a plasma with the organoaluminum-containing film.

[0084] (Supplementary Note 2) The plasma processing apparatus according to Supplementary Note 1, wherein the control unit is configured to repeat (a) and (b).

[0085] (Supplementary Note 3) The plasma processing apparatus according to Supplementary Note 1 or 2, wherein the electrostatic chuck has a first zone including a first heater and a second zone including a second heater, and the control unit is configured to perform, between (a) and (b), (c) a step of controlling the first heater to heat the first zone of the electrostatic chuck to remove an organoaluminum-containing film deposited on the first zone of the electrostatic chuck, and in (b), the alumina-containing film is selectively formed on the second zone of the electrostatic chuck.

[0086] (Supplementary Note 4) The plasma processing apparatus according to Supplementary Note 3, wherein in (c), the control unit is configured to control the first heater to heat the first zone of the electrostatic chuck to 200° C. or higher.

[0087] (Supplementary Note 5) The plasma processing apparatus of any one of Supplementary Notes 1 to 4, wherein the control unit is configured to perform a step of placing a mask member on the electrostatic chuck before (a), wherein the electrostatic chuck has one or more shielding portions covered by the mask member and one or more exposed portions not covered by the mask member, and wherein (a) and (b) are performed with the mask member placed on the electrostatic chuck, thereby selectively forming the alumina-containing film on the one or more exposed portions of the electrostatic chuck.

[0088] (Supplementary Note 6) The plasma processing apparatus according to Supplementary Note 5, wherein the electrostatic chuck has a plurality of protrusions on a surface thereof, and the mask member is configured such that an upper surface of each of the plurality of protrusions corresponds to the one or more exposed portions.

[0089] (Supplementary Note 7) The plasma processing apparatus according to Supplementary Note 5, wherein the electrostatic chuck has a central portion, an intermediate portion surrounding the central portion, and an outer peripheral portion surrounding the intermediate portion, and the mask member is configured such that at least one of the central portion, the intermediate portion, and the outer peripheral portion corresponds to the one or more exposed portions.

[0090] (Appendix 8) A plasma processing apparatus according to any one of Appendices 1 to 7, further comprising: a base having a refrigerant flow path; and a chiller unit configured to supply a refrigerant to the refrigerant flow path, wherein the control unit is configured to control the chiller unit in (a) so as to maintain the refrigerant at 0°C or below.

[0091] (Supplementary Note 9) A method for manufacturing a substrate, comprising the steps of: (a) providing an electrostatic chuck; (b) supplying an organoaluminum-containing gas to the electrostatic chuck to deposit an organoaluminum-containing film on the electrostatic chuck; and (c) after step (b), supplying O ２and contacting the organoaluminum-containing film with a plasma to form an alumina-containing film on the electrostatic chuck.

[0092] (Supplementary Note 10) The method for manufacturing an electrostatic chuck according to Supplementary Note 9, wherein the steps (b) and (c) are repeated.

[0093] (Supplementary Note 11) The method for manufacturing an electrostatic chuck according to Supplementary Note 9 or 10, further comprising the step of: (d) between steps (b) and (c), heating a first zone of the electrostatic chuck to remove an organoaluminum-containing film deposited on the first zone of the electrostatic chuck; and in step (b), the alumina-containing film is selectively formed on a second zone of the electrostatic chuck.

[0094] (Appendix 12) The method for manufacturing an electrostatic chuck according to any one of Appendices 9 to 11, wherein steps (b) and (c) are performed in a state where a mask member is placed on the electrostatic chuck, thereby selectively forming the alumina-containing film on one or more exposed portions of the electrostatic chuck that are not covered by the mask member.

[0095] (Supplementary Note 13) The method for manufacturing an electrostatic chuck according to Supplementary Note 12, wherein the electrostatic chuck has a plurality of protrusions on a surface thereof, and the mask member is configured such that an upper surface of each of the plurality of protrusions corresponds to the one or more exposed portions.

[0096] (Supplementary Note 14) The method for manufacturing an electrostatic chuck according to Supplementary Note 12, wherein the electrostatic chuck has a central portion, an intermediate portion surrounding the central portion, and an outer peripheral portion surrounding the intermediate portion, and the mask member is configured so that at least one portion selected from the group consisting of the central portion, the intermediate portion, and the outer peripheral portion corresponds to the one or more exposed portions.

[0097] (Supplementary Note 15) A method for manufacturing a semiconductor device, comprising: (a) providing an electrostatic chuck; (b) supplying an organoaluminum-containing gas to the electrostatic chuck to deposit an organoaluminum-containing film on the electrostatic chuck; and (c) after (b), supplying O ２contacting the organoaluminum-containing film with a plasma to form an alumina-containing film on the electrostatic chuck.

[0098] (Supplementary Note 16) The method for regenerating an electrostatic chuck according to Supplementary Note 15, wherein steps (b) and (c) are repeated.

[0099] (Supplementary Note 17) The method for regenerating an electrostatic chuck according to Supplementary Note 15 or 16, further comprising the step of: (d) between (b) and (c), heating a first zone of the electrostatic chuck to remove an organic aluminum-containing film deposited on the first zone of the electrostatic chuck; and in (b), the alumina-containing film is selectively formed on a second zone of the electrostatic chuck.

[0100] (Appendix 18) The method for regenerating an electrostatic chuck according to any one of Appendices 15 to 17, wherein steps (b) and (c) are performed in a state where a mask member is placed on the electrostatic chuck, thereby selectively forming the alumina-containing film on one or more exposed portions of the electrostatic chuck that are not covered by the mask member.

[0101] (Supplementary Note 19) The method for regenerating an electrostatic chuck according to Supplementary Note 18, wherein the electrostatic chuck has a plurality of protrusions on a surface thereof, and the mask member is configured such that an upper surface of each of the plurality of protrusions corresponds to the one or more exposed portions.

[0102] (Supplementary Note 20) The method for regenerating an electrostatic chuck according to Supplementary Note 18, wherein the electrostatic chuck has a central portion, an intermediate portion surrounding the central portion, and an outer peripheral portion surrounding the intermediate portion, and the mask member is configured so that at least one portion selected from the group consisting of the central portion, the intermediate portion, and the outer peripheral portion corresponds to the one or more exposed portions.

[0103] The above embodiments are described for the purpose of explanation and are not intended to limit the scope of the present disclosure. Various modifications can be made to the above embodiments without departing from the scope and spirit of the present disclosure. For example, some components in one embodiment can be added to other embodiments. Also, some components in one embodiment can be replaced with corresponding components in other embodiments.

[0104] 1: Plasma processing apparatus, 10: Plasma processing chamber, 12: Plasma generating section, 20: Gas supply section, 1111: Electrostatic chuck, 1111a: Ceramic member, 1111b: Electrostatic electrode, 200: Upper surface, 201: Protrusion, 201a: TMA-containing film, 201b: Alumina-containing film, 202: Seal band, 111b: Outer periphery, MK: Mask member, OP: Opening, W: Substrate

Claims

1. A method for depositing an organic aluminum-containing film on the electrostatic chuck, comprising: a plasma processing chamber; an electrostatic chuck disposed in the plasma processing chamber; a gas supply unit; a plasma generation unit; and a control unit, wherein the control unit performs the steps of: (a) controlling the gas supply unit to supply an organic aluminum-containing gas into the plasma processing chamber, thereby depositing an organic aluminum-containing film on the electrostatic chuck; and (b) after step (a), controlling the gas supply unit to supply an organic aluminum-containing gas into the plasma processing chamber. ２ The gas supply unit and the plasma generation unit are controlled to generate plasma, ２ forming an alumina-containing film on the electrostatic chuck by contacting a plasma with the organoaluminum-containing film.

2. The plasma processing apparatus according to claim 1, wherein the control unit is configured to repeat (a) and (b).

3. The plasma processing apparatus of claim 1, wherein the electrostatic chuck has a first zone including a first heater and a second zone including a second heater, and the control unit is configured to perform, between (a) and (b), (c) a step of controlling the first heater to heat the first zone of the electrostatic chuck, thereby removing an organic aluminum-containing film deposited on the first zone of the electrostatic chuck, and in (b), the alumina-containing film is selectively formed on the second zone of the electrostatic chuck.

4. The plasma processing apparatus according to claim 3, wherein the control unit is configured to control the first heater in (c) so as to heat the first zone of the electrostatic chuck to 200°C or higher.

5. The plasma processing apparatus of claim 1, wherein the control unit is configured to perform a process in which, before (a), a mask member is placed on the electrostatic chuck, the electrostatic chuck having one or more shielded portions covered by the mask member and one or more exposed portions not covered by the mask member, and (a) and (b) are performed with the mask member placed on the electrostatic chuck, thereby selectively forming the alumina-containing film on the one or more exposed portions of the electrostatic chuck.

6. The plasma processing apparatus according to claim 5, wherein the electrostatic chuck has a plurality of protrusions on its surface, and the mask member is configured such that an upper surface of each of the plurality of protrusions corresponds to the one or more exposed portions.

7. The plasma processing apparatus according to claim 5, wherein the electrostatic chuck has a central portion, an intermediate portion surrounding the central portion, and an outer peripheral portion surrounding the intermediate portion, and the mask member is configured such that at least one of the central portion, the intermediate portion, and the outer peripheral portion corresponds to the one or more exposed portions.

8. A plasma processing apparatus according to any one of claims 1 to 7, further comprising: a base having a refrigerant flow path; and a chiller unit configured to supply refrigerant to the refrigerant flow path, wherein the control unit is configured to control the chiller unit in (a) so as to maintain the refrigerant at 0°C or below.

9. (a) providing an electrostatic chuck; (b) supplying an organoaluminum-containing gas to the electrostatic chuck to deposit an organoaluminum-containing film on the electrostatic chuck; and (c) after (b), ２ and contacting the organoaluminum-containing film with a plasma to form an alumina-containing film on the electrostatic chuck.

10. The method for manufacturing an electrostatic chuck according to claim 9, wherein steps (b) and (c) are repeated.

11. The method for manufacturing an electrostatic chuck according to claim 9, further comprising the step of: (d) between (b) and (c), heating the first zone of the electrostatic chuck to remove the organoaluminum-containing film deposited on the first zone of the electrostatic chuck; and in (b), the alumina-containing film is selectively formed on the second zone of the electrostatic chuck.

12. The method for manufacturing an electrostatic chuck according to claim 9, wherein steps (b) and (c) are performed with a mask member placed on the electrostatic chuck, thereby selectively forming the alumina-containing film on one or more exposed portions of the electrostatic chuck that are not covered by the mask member.

13. The method for manufacturing an electrostatic chuck according to claim 12, wherein the electrostatic chuck has a plurality of protrusions on its surface, and the mask member is configured such that an upper surface of each of the plurality of protrusions corresponds to the one or more exposed portions.

14. The method for manufacturing an electrostatic chuck according to claim 12, wherein the electrostatic chuck has a central portion, an intermediate portion surrounding the central portion, and an outer peripheral portion surrounding the intermediate portion, and the mask member is configured so that at least one portion selected from the group consisting of the central portion, the intermediate portion, and the outer peripheral portion corresponds to the one or more exposed portions.

15. (a) providing an electrostatic chuck; (b) supplying an organoaluminum-containing gas to the electrostatic chuck to deposit an organoaluminum-containing film on the electrostatic chuck; and (c) after (b), ２ contacting the organoaluminum-containing film with a plasma to form an alumina-containing film on the electrostatic chuck.

16. The method for regenerating an electrostatic chuck according to claim 15, wherein steps (b) and (c) are repeated.

17. The method for regenerating an electrostatic chuck according to claim 15, further comprising the step of: (d) between (b) and (c), heating a first zone of the electrostatic chuck to remove the organoaluminum-containing film deposited on the first zone of the electrostatic chuck; and in (b), the alumina-containing film is selectively formed on a second zone of the electrostatic chuck.

18. The method for regenerating an electrostatic chuck according to claim 15, wherein steps (b) and (c) are performed with a mask member placed on the electrostatic chuck, thereby selectively forming the alumina-containing film on one or more exposed portions of the electrostatic chuck that are not covered by the mask member.

19. The method for regenerating an electrostatic chuck according to claim 18, wherein the electrostatic chuck has a plurality of protrusions on its surface, and the mask member is configured such that an upper surface of each of the plurality of protrusions corresponds to the one or more exposed portions.

20. The method for regenerating an electrostatic chuck according to claim 18, wherein the electrostatic chuck has a central portion, an intermediate portion surrounding the central portion, and an outer peripheral portion surrounding the intermediate portion, and the mask member is configured so that at least one portion selected from the group consisting of the central portion, the intermediate portion, and the outer peripheral portion corresponds to the one or more exposed portions.

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