Optical device having diffusion barrier layer

Abstract

The present disclosure relates to an optical device having a diffusion barrier layer. The optical device having a diffusion barrier layer comprises: a first electrode; a first charge transport layer formed on the first electrode; a perovskite layer formed on the first charge transport layer; a second charge transport layer formed on the perovskite layer; a diffusion barrier layer formed on the second charge transport layer; and a second electrode formed on the diffusion barrier layer, wherein the second electrode includes Au, the diffusion barrier layer has a double-layer structure of a buffer layer and an ITO layer, the buffer layer is in direct contact with the second charge transport layer, and the ITO layer is in direct contact with the second electrode.

Description

Optical device with diffusion barrier layer

[0001] The present disclosure relates to an optical device having a diffusion barrier layer, and more particularly, to an optical device including a MoO3 / ITO diffusion barrier layer.

[0002] The need to develop environmentally friendly and sustainable energy technologies that can address climate change is growing. Photovoltaic devices encompass both photovoltaic and electro-optical conversion devices. Solar cells, one type of photovoltaic device, are attracting attention as a sustainable energy technology and a solution that can proactively meet future energy demands. Solar cells are semiconductor devices that convert solar energy into electrical energy, utilizing the photovoltaic effect.

[0003] However, current solar cell technology is not efficient enough to meet future energy demands, necessitating technological innovations that surpass current standards. To address this, innovative materials-based technologies such as dye-sensitized solar cells, organic solar cells, quantum dot solar cells, and perovskite solar cells (PSCs) have been developed as next-generation solar cells.

[0004] Among these, perovskite solar cells have emerged as a key element of thin-film solar cells, potentially replacing conventional silicon solar cells. Perovskite solar cells, which comprise a hole-transporting material, a light-absorbing material, and an electron-transporting material, exhibit remarkably high photovoltaic efficiency by utilizing perovskite as a light-absorbing material. However, perovskite solar cells suffer from a gradual decline in the stability of the photovoltaic element during use due to diffusion of electrode materials into the hole-transporting layer.

[0005] The present disclosure aims to provide an optical device having improved stability by including a diffusion barrier layer.

[0006] In an optical device having a diffusion barrier layer according to one embodiment of the present disclosure, the device includes a first electrode, a first charge transport layer formed on the first electrode, a perovskite layer formed on the first charge transport layer, a second charge transport layer formed on the perovskite layer, a diffusion barrier layer formed on the second charge transport layer, and a second electrode formed on the diffusion barrier layer, wherein the second electrode includes Au, the diffusion barrier layer is composed of a double-layer structure of a buffer layer and an ITO layer, the buffer layer is in direct contact with the second charge transport layer, and the ITO layer is in direct contact with the second electrode.

[0007] According to one embodiment of the present disclosure, the buffer layer comprises MoO3.

[0008] According to one embodiment of the present disclosure, the ITO layer is formed to a thickness of 100 nm or less.

[0009] According to one embodiment of the present disclosure, the second charge transport layer comprises Spiro-OMeTAD.

[0010] According to one embodiment of the present disclosure, an optical module is provided manufactured by combining a plurality of optical elements.

[0011] According to one embodiment of the present disclosure, a fusion device manufactured by combining an optical module and a secondary battery is provided.

[0012] By using various embodiments of the present disclosure, light irradiation stability can be improved without reducing the efficiency of the optical device by introducing a diffusion barrier layer.

[0013] By using various embodiments of the present disclosure, a battery-optical module fusion device having high energy conversion efficiency can be manufactured.

[0014] The effects of the present disclosure are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by a person having ordinary skill in the art to which the present disclosure belongs (hereinafter referred to as “ordinary skilled person”) from the description of the claims.

[0015] FIG. 1 is a drawing showing the structure of an optical device according to one embodiment of the present disclosure.

[0016] FIG. 2 is a drawing showing an optical module manufactured by combining a plurality of optical elements according to one embodiment of the present disclosure.

[0017] FIG. 3 is a diagram showing the efficiency of an optical module according to one embodiment of the present disclosure.

[0018] FIG. 4 is a drawing showing a fusion device according to one embodiment of the present disclosure.

[0019] FIG. 5 is a diagram showing the electrical performance of a fusion device according to one embodiment of the present disclosure.

[0020] Hereinafter, specific details for implementing the present disclosure will be described in detail with reference to the attached drawings. However, in the following description, specific descriptions of widely known functions or configurations will be omitted if they may unnecessarily obscure the gist of the present disclosure.

[0021] Throughout this specification, whenever a part is said to "include" a component, this does not mean that it excludes other components, but rather that it may include other components, unless otherwise specifically stated.

[0022] The term "about" used throughout this specification is used to encompass the tolerance when there is a tolerance.

[0023] Throughout this specification, the term "at least one" in a Markush format expression means including one or more selected from the group consisting of components described in the Markush format expression.

[0024] Throughout this specification, references to “A and / or B” mean “A, or B, or A and B.”

[0025] In the present disclosure, “perovskite” or “PE” means a material having a perovskite crystal structure, and may have various perovskite crystal structures in addition to the crystal structure of ABX3.

[0026] In the present disclosure, the term "optical device" is used to mean both a photoelectric conversion device and an electro-optical conversion device. For example, the optical device includes, but is not limited to, a solar cell, a light emitting diode (LED), a photodetector, an X-ray detector, and a laser.

[0027] In the present disclosure, the term “halide,” “halogen,” “halide,” or “halo” means a material or composition containing a halogen atom belonging to group 17 of the periodic table in the form of a functional group, which may include, for example, chlorine, bromine, fluorine, or iodine compounds.

[0028] Throughout this specification, the term "layer" refers to a layer having a thickness. The layer may be porous or non-porous. Porosity refers to having a void ratio. The layer may have a bulk form as a whole or may correspond to a single crystal thin film, but is not limited thereto.

[0029] Throughout this specification, when a member is said to be located "on" another member, unless otherwise specifically stated, this includes not only cases where the member is in contact with the other member, but also cases where another member exists between the two members.

[0030] Throughout this specification, where efficiency is simply described without further explanation, the efficiency may refer to power conversion efficiency (PCE).

[0031] Hereinafter, specific details for implementing the present disclosure will be described in detail with reference to the attached drawings. However, in the following description, specific descriptions of widely known functions or configurations will be omitted if they may unnecessarily obscure the gist of the present disclosure.

[0032] The advantages and features of the disclosed embodiments, and methods for achieving them, will become clearer with reference to the embodiments described below, along with the accompanying drawings. However, the present disclosure is not limited to the embodiments disclosed below and may be implemented in various different forms. These embodiments are provided solely to ensure the completeness of the disclosure and to fully inform those skilled in the art of the scope of the invention.

[0033] In the attached drawings, identical or corresponding components are assigned the same reference numerals. Furthermore, in the description of the embodiments below, duplicate descriptions of identical or corresponding components may be omitted. However, even if a description of a component is omitted, it is not intended that such component is not included in any embodiment.

[0034] An optical device according to one embodiment of the present disclosure may include a first electrode, a first charge transport layer formed on the first electrode, a perovskite layer formed on the first charge transport layer, a second charge transport layer formed on the perovskite layer, and a second electrode formed on the second charge transport layer.

[0035] For example, when the photonic device is used in a solar cell having a nip structure, the photonic device may have a structure in which a first electrode, an electron transport layer (a first charge transport layer), a perovskite layer, a hole transport layer (a second charge transport layer), and a second electrode are sequentially stacked. Or, when the photonic device corresponds to a solar cell having a pin structure, the photonic device may have a structure in which a first electrode, a hole transport layer (a first charge transport layer), a perovskite layer, an electron transport layer (a second charge transport layer), and a second electrode are sequentially stacked.

[0036] For example, the photonic device may have a planar structure, a bilayer structure, or a meso-superstructure structure. Depending on the structure of the photonic device, the shapes of the electrodes, charge transport layer, and perovskite layer may be modified.

[0037] For example, when the photonic device has a bi-layer structure, the perovskite layer may have a bi-layer structure formed by filling porous TiO2 with perovskite to form a layer. The bi-layer may refer to a structure composed of a first layer of a TiO2: Perovskite mixed layer in which all of the pores of the porous TiO2 are filled with perovskite, and a second layer of a pure perovskite layer thereon.

[0038] The electrode comprises a first electrode and / or a second electrode, and may be an anode or a cathode. The electrode may be an anode or a cathode. If the first electrode is an anode, the second electrode may be a cathode. Alternatively, if the first electrode is a cathode, the second electrode may be an anode. For example, the electrode may be a conductive oxide such as indium-tin oxide (ITO), indium-zinc oxide (IZO), flourine-doped tin oxide (FTO), or the like. Alternatively, the electrode may comprise a material selected from the group consisting of silver (Ag), gold (Au), magnesium (Mg), aluminum (Al), platinum (Pt), tungsten (W), copper (Cu), molybdenum (Mo), nickel (Ni), palladium (Pd), chromium (Cr), calcium (Ca), samarium (Sm), and lithium (Li), and combinations thereof. Alternatively, the electrode may correspond to a flexible and transparent material such as plastic, such as polyethylene PET (polyethylene terephthalate), PEN (polyethylene naphthelate), PP (polyperopylene), PI (polyimide), PC (polycarbornate), PS (polystylene), POM (polyoxyethylene), etc., in which a conductive material is doped.

[0039] The electrode may correspond to a material commonly used as an electrode material for a front electrode or a back electrode in a photonic device. The electrode may be a material selected from one or more of gold, silver, platinum, palladium, copper, aluminum, carbon, cobalt sulfide, copper sulfide, nickel oxide, and a composite thereof, but is not limited thereto. For example, the electrode may be one or more inorganic conductive electrodes selected from fluorine-doped tin oxide (FTO), indium-doped tin oxide (ITO), ZnO, carbon nanotubes (CNT), and graphene, or may correspond to an organic conductive electrode such as PEDOT:PSS, but is not limited thereto.

[0040] As a charge transport layer, an electron transport layer (ETL) or a hole transport layer (HTL) may be formed on the first electrode. If the first charge transport layer is an electron transport layer, the second charge transport layer may correspond to a hole transport layer. Alternatively, if the first charge transport layer is a hole transport layer, the second charge transport layer may correspond to an electron transport layer.

[0041] The electron transport layer may correspond to a semiconductor comprising an "n-type material." The "n-type material" refers to an electron transport material. The electron transport material may be a single electron transport compound or elemental material, or a mixture of two or more electron transport compounds or elemental materials. The electron transport compound or elemental material may be undoped or doped with one or more dopant elements.

[0042] For example, the electron transport layer may be an electron-conducting organic layer or an electron-conducting inorganic layer. The electron-conducting organic layer may be an organic layer used as an n-type semiconductor in a typical organic solar cell. For example, the electron-conducting organic layer may include, but is not limited to, fullerenes (C60, C70, C74, C76, C78, ​​C82, C95), PCBM ([6,6]-phenyl-C61butyric acid methyl ester)), and fullerene-derivatives including C71-PCBM, C84-PCBM, PC70BM ([6,6]-phenyl C70-butyric acid methyl ester), PBI (polybenzimidazole), PTCBI (3,4,9,10-perylenetetracarboxylic bisbenzimidazole), F4-TCNQ (tetrafluorotetracyanoquinodimethane), or mixtures thereof.

[0043] The electron-conducting inorganic material may be an electron-conducting metal oxide used for electron transport in a typical quantum dot-based solar cell, dye-sensitized solar cell, or perovskite solar cell. In one embodiment, the electron-conducting metal oxide may be an n-type metal oxide semiconductor. For example, the n-type metal oxide semiconductor may be a material selected from, but not limited to, one or more of Ti oxide, Zn oxide, In oxide, Sn oxide, W oxide, Nb oxide, Mo oxide, Mg oxide, Ba oxide, Zr oxide, Sr oxide, Yr oxide, La oxide, V oxide, Al oxide, Y oxide, Sc oxide, Sm oxide, Ga oxide, In oxide, and SrTi oxide, a mixture thereof, or a composite thereof.

[0044] The electron transport layer may be a dense layer (dense film) or a porous layer (porous film). The dense electron transport layer may be a film of the electron-conducting organic material described above or a dense film of an electron-conducting inorganic material. The electron transport layer of the porous film may be a porous film composed of particles of the electron-conducting inorganic material described above.

[0045] The hole transport layer may correspond to a semiconductor comprising a "p-type material." The "p-type material" refers to a hole transport material. The hole transport material may be a single hole transport compound or elemental material, or a mixture of two or more hole transport compounds or elemental materials. The hole transport compound or elemental material may be undoped or doped with one or more dopant elements. The hole transport material may be an organic hole transport material, an inorganic hole transport material, or a combination thereof.

[0046] The hole transport layer may be manufactured using a solution process. The hole transport layer may be a thin film of an organic hole transport material. The thickness of the hole transport layer thin film may range from 10 nm to 500 nm, but is not limited thereto.

[0047] The hole transport material may be an organic hole transport material, specifically a single molecule or polymer organic hole transport material (hole conducting organic material). The polymer organic hole transport material may include one or more materials selected from thiophene-based, paraphenylenevinylene-based, carbazole-based, and triphenylamine-based compounds.

[0048] Single-molecule to small-molecule organic hole transport materials include pentacene, coumarin 6 (coumarin 6, 3- (2-benzothiazolyl)-7- (diethylamino)coumarin), zinc phthalocyanine (ZnPC), copper phthalocyanine (CuPC), titanium oxide phthalocyanine (TiOPC), Spiro-MeOTAD (2,2',7,7'-tetrakis(N,Np-dimethoxyphenylamino)- 9,9'-spirobifluorene), F16CuPC (copper(II) 1,2,3,4,8,9,10,11,15,16,17,18,22,23,24,25-hexadecafluoro29H,31H-phthalocyanine), and boron subphthalocyanine chloride (SubPc). It may include, but is not limited to, one or more substances selected from N3(cis-di(thiocyanato)-bis(2,2'-bipyridyl-4,4'-dicarboxylic acid)-ruthenium(II)).

[0049] 고분자 유기 정공 수송물질은, P3HT(poly[3-hexylthiophene]), MDMO-PPV(poly[2-methoxy-5-(3',7'- dimethyloctyloxyl)]-1,4-phenylene vinylene), MEH-PPV(poly[2-methoxy -5-(2''-ethylhexyloxy)-p-phenylene vinylene]), P3OT(poly(3-octyl thiophene)), POT( poly(octyl thiophene)), P3DT(poly(3-decyl thiophene)), P3DDT(poly(3-dodecyl thiophene), PPV(poly(p-phenylene vinylene)), TFB(poly(9,9'-dioctylfluorene-co-N-(4-butylphenyl)diphenyl amine), Polyaniline, SpiroMeOTAD ([2,22′,7,77′-tetrkis (N,N-di-p-methoxyphenyl amine)-9,9,9′-spirobi fluorine]), PCPDTBT(Poly[2,1,3-benzothiadiazole- 4,7-diyl[4,4-bis(2-ethylhexyl-4H- cyclopenta [2,1-b:3,4- b']dithiophene-2,6-diyl]], Si-PCPDTBT(poly[(4,4′-bis(2-ethylhexyl)dithieno[3,2-b:2′,3′-d]silole)- 2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl]), PBDTTPD(poly((4,8-diethylhexyloxyl) benzo([1,2- b:4,5-b']dithiophene)-2,6-diyl)-alt-((5-octylthieno[3,4-c]pyrrole-4,6-dione)-1,3-diyl)), PFDTBT(poly[2,7-(9-(2-ethylhexyl)-9-hexyl-fluorene)-alt-5,5-(4', 7, -di-2-thienyl-2',1',3'-benzothiadiazole)]), PFO-DBT(poly[2,7-.9,9-(dioctyl-fluorene)-alt-5,5-(4',7'-di-2-.thienyl-2', 1', 3'-benzothiadiazole)]), PSiFDTBT(poly[(2,7-dioctylsilafluorene)-2,7-diyl-alt-(4,7-bis(2-thienyl)-2,1,3-benzothiadiazole)-5,5′-diyl]), PSBTBT(poly[(4,4′-bis(2-ethylhexyl)dithieno[3,2-b:2′,3′-d]silole)- 2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl]), PCDTBT(Poly [[9-(1-octylnonyl)-9H-carbazole-2,7- diyl] -2,5-thiophenediyl -2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl]), PFB (poly(9,9′- dioctylfluorene-co-bis(N,N′-(4,butylphenyl))bis(N,N′-phenyl-1,4-phenylene)diamine), F8BT (poly(9,9′- dioctylfluorene-co-benzothiadiazole), PEDOT (poly(3,4-ethylenedioxythiophene)), PEDOT:PSS (poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate)), PTAA (poly(triarylamine)), Poly(4-butylphenyldiphenyl-amine) and copolymers thereof may include one or more selected from the group consisting of, but is not limited thereto.

[0050] The electron transport layer or hole transport layer may be surface-modified by doping. The electron transport layer or hole transport layer may be formed by applying it to one surface of the electrode or coating it in the form of a film through spin coating, dip coating, inkjet printing, gravure printing, spray coating, bar coating, gravure coating, brush painting, thermal evaporation, sputtering, E-Beam, screen printing, blade process, etc.

[0051] The perovskite layer can be formed through various processes, including a vapor deposition process or a solution process. The perovskite layer can be formed using a vapor deposition process. The vapor deposition process may correspond to a process in which a material is supplied in a vaporized or plasma state into a vacuum chamber and the material is deposited on a surface of a target object (e.g., a substrate). The perovskite layer can be formed through a coating process during the solution process. The coating process may be selected from the group consisting of, but is not limited to, spin coating, bar coating, nozzle printing, spray coating, slot die coating, gravure printing, inkjet printing, screen printing, electrohydrodynamic jet printing, electrospray, and combinations thereof.

[0052] For example, the perovskite may contain a monovalent organic cation, a divalent metal cation, and a halogen anion. In one embodiment, the perovskite of the present invention may satisfy the following chemical formula:

[0053]

[0054] [Chemical Formula 1]

[0055] AMX3

[0056]

[0057] In chemical formula 1, A is a monovalent cation, which may correspond to an organic ammonium ion, an amidinium group ion, or a combination of an organic ammonium ion and an amidinium group ion.

[0058] For example, an organic cation as A has the chemical formula (R1R2R3R4N) + may have. In this case, R1~R4 may correspond to hydrogen, unsubstituted or substituted C1-C20 alkyl, or unsubstituted or substituted aryl.

[0059] For example, an organic cation as A has the chemical formula (R5NH3) + , wherein R5 may correspond to hydrogen, or substituted or unsubstituted C1-C20 alkyl.

[0060] For example, an organic cation as A has the chemical formula (R6R7N=CH-NR8R9) + , and in this case, R6~R9 can correspond to hydrogen, methyl, or ethyl.

[0061] M can be a divalent metal ion. For example, M can be Cu 2+ , Ni 2+ , Co 2+ , Fe 2+ , Mn 2+ , Cr 2+ , Pd 2+ , Cd 2+ , Ge 2+ , Sn 2+ , Pb 2+ and Yb 2+ A metal cation selected from the group consisting of, but not limited to, and combinations thereof.

[0062] X may correspond to a halogen ion. For example, the halogen ion is I - , Br - , F - , Cl -and combinations thereof. Including, but not limited to, a halogen ion selected from the group consisting of:

[0063] For example, the perovskite may be one or a mixture of two or more selected from CH3NH3PbI3 (methylammonium lead iodide, MAPbI3) and CH(NH2)2PbI3 (formamidinium lead iodide, FAPbI3).

[0064] FIG. 1 is a diagram illustrating the structure of an optical device according to one embodiment of the present disclosure. In one embodiment, the first electrode and the second electrode may be composed of ITO (Indium Tin Oxide) and Au, respectively.

[0065] In one embodiment, the electron transport layer may include tin oxide. For example, the electron transport layer may be composed of a bilayer structure of a sol-gel based SnO2 layer and a SnO2 nanoparticle layer, but is not limited thereto.

[0066] In one embodiment, the hole transport layer may include Spiro-OMeTAD. Holes generated in the perovskite layer can travel through the hole transport layer to the electrode.

[0067] In one embodiment, a diffusion barrier layer (not shown in the drawing) is disposed between the hole transport layer and the electrode to suppress diffusion of the electrode, thereby improving the stability of the optical device. In one embodiment, the diffusion barrier layer may be disposed between the hole transport layer Spiro-OMeTAD and the electrode Au.

[0068] Specifically, the diffusion barrier layer may include a buffer layer disposed on the hole transport layer and an ITO layer disposed on the buffer layer. At this time, the buffer layer may include MoO3 with a thickness of 10 nm or less, and the ITO layer may be disposed with a thickness of 100 nm or less.

[0069] In one embodiment, the MoO3 buffer layer can be in direct contact with the Spiro-OMeTAD charge transport layer, and the ITO layer can be in direct contact with the Au electrode. The ITO layer can serve to block the diffusion of metal ions from the Au electrode to the charge transport layer while maintaining the stability and efficiency of the photonic device.

[0070]

[0071] Performance comparison

[0072] The performance of the optical device was evaluated using the following method using a perovskite optical device including a diffusion barrier layer of different thicknesses, and the results of testing while changing the thickness of ITO in the optical device structure below are shown in Tables 1 and 2 below.

[0073]

[0074] Optical device structure: Glass / ITO / Sol-gel SnO2 / SnO2NPs / (FAPbI3) 0.95 (MAPbBr3) 0.05 Perovskite / Spiro-OMeTAD / MoO3 / ITO / Au

[0075]

[0076] 1) Current-voltage characteristics: Using an artificial sun device (ORIEL class A solar simulator, Newport, model 91195A) and a source-meter (source-meter, Kethley, model 2420), the light of the AM1.5G spectrum was irradiated through the artificial sun device with an irradiance of 1,000 W / ㎡, and then the voltage was applied in both directions (Reverse / Forward) and the current was measured, and the open circuit voltage (V) was measured through this. OC ), short-circuit current density (J SC ) and fill factor (FF) were calculated.

[0077] 2) Power conversion efficiency (PCE): The final power conversion efficiency was obtained by multiplying the values ​​of open circuit voltage, short circuit current density, and fill factor calculated from the current-voltage characteristics.

[0078] 3) Stability: Stability was evaluated by inputting the measured PCE value into the following calculation formula.

[0079] Calculation formula = (η1 / η0) x 100

[0080] In the calculation formula, η0 represents the initial photoelectric conversion efficiency of the perovskite optical device immediately after the stability test begins, and η1 represents the photoelectric conversion efficiency measured after a certain period of time after the same perovskite optical device is continuously irradiated with the AM1.5G spectrum and 1 Sun light intensity of an artificial solar device.

[0081] 4) Maximum power point tracking (MPPT): In the case of the light irradiation stability results shown in Fig. 3, the voltage indicating the maximum output was continuously detected and tracked, thereby showing the relative maximum output value that changes over time.

[0082]

[0083] Component thickness V oc (V)J sc (mA / cm 2 )FF(%)η(%)RFRFRFRFNo diffusion barrier layer0.950.9123.823.8275.9972.917.315.92MoO310nmITO 20nm0.960.9224.2224.1576.0369.3917.8115.53MoO310nmITO 40nm0.960.9424.0224.0277.0973.7417.916.59MoO310nmITO 80nm0.970.9424.1224.0275.5270.9217.6115.96MoO310nmITO 100nm0.950.9223.7123.776.1371.7917.2715.77MoO310nmITO 150nm0.930.8923.9123.9575.3970.5916.8815.15

[0084] R: reverse; F: forward

[0085] Component Thicknessη(%)(Reverse)Photo-stability1h2h3h4h5hDiffusion barrier layer None17.399.01%97.87%97.24%96.77%96.15%MoO310nmITO 100nm17.2799.19%99.56%99.12%99.25%99.25%

[0086] In Table 1, it can be confirmed that the efficiency of the optical device is hardly reduced until the thickness of the ITO layer is less than 100 nm, and in Table 2, it can be confirmed that the light irradiation stability of the optical device is improved over time when the diffusion barrier layer is introduced.

[0087] FIG. 2 is a diagram showing an optical module manufactured by connecting a plurality of optical elements in series according to one embodiment of the present disclosure, and FIG. 3 is a diagram showing the efficiency of an optical module according to one embodiment of the present disclosure. Although FIG. 2 illustrates five optical elements connected in series, the present invention is not limited thereto, and an optical module may be manufactured by connecting any number of optical elements. A diffusion barrier layer according to one embodiment described above may be disposed on each of the optical elements included in the optical module illustrated in FIG. 2.

[0088] Figure 3 (a) shows the efficiency of an optical module with a diffusion barrier layer, and Figure 3 (b) shows the relative efficiency between the optical module with a diffusion barrier layer and other optical modules. From Figures 3 (a) and (b), it can be confirmed that, unlike other optical modules, the efficiency of the optical module with a diffusion barrier layer does not decrease over time. In other words, it can be confirmed that the optical module with a diffusion barrier layer has improved long-term optical stability.

[0089]

[0090] Optical device structure used in the test of Fig. 3 (a): FTO / Sol-gel SnO2 / SnO2NPs / (FAPbI3) 0.95 (MAPbBr3)0.05 Perovskite / Spiro-OMeTAD / MoO3 / ITO / Au

[0091]

[0092] Optical device structure used in the test of Fig. 3 (b)

[0093] Reference optical device structure: FTO / Sol-gel SnO2 / SnO2NPs / (FAPbI3) 0.95 (MAPbBr3) 0.05 Perovskite / Spiro-OMeTAD / Au

[0094] ETL Polymer Composite Photonic Device Structure: FTO / Sol-gel SnO2 / SnO2NPs+Poly(ethylene oxide) / (FAPbI3) 0.95 (MAPbBr3) 0.05 Perovskite / Spiro-OMeTAD / Au

[0095] Perovskite Passivation Photonic Device Structure: FTO / Sol-gel SnO2 / SnO2NPs / (FAPbI3) 0.95 (MAPbBr3) 0.05 Perovskite / HAI / Spiro-OMeTAD / Au

[0096] Diffusion Barrier Layer Optical Device Structure: FTO / Sol-gel SnO2 / SnO2NPs / (FAPbI3) 0.95 (MAPbBr3) 0.05 Perovskite / Spiro-OMeTAD / MoO3 / ITO / Au

[0097] (* sol-gel SnO2: SnO2 film formed by sol-gel method, SnO2NPs: SnO2 nanoparticle layer, HAI: Hexylammonium iodide)

[0098]

[0099] FIG. 4 is a drawing showing a fusion device (100) according to one embodiment of the present disclosure, and FIG. 5 is a drawing showing the electrical performance of the fusion device (100) according to one embodiment of the present disclosure. In one embodiment, a photoelectric charging-storage fusion device (100) can be manufactured by combining an optical module (110) in which a plurality of optical devices having a diffusion barrier layer are combined with a pouch-shaped full-cell (120). In FIG. 5, it can be confirmed that the fusion device (100) has a high total energy conversion efficiency for 50 cycles as the optical module (110) introduces a diffusion barrier layer.

[0100] The preceding description of the present disclosure is provided to enable any person skilled in the art to make or use the present disclosure. Various modifications to the present disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to various modifications without departing from the spirit or scope of the present disclosure. Therefore, the present disclosure is not intended to be limited to the examples described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0101] While the present disclosure has been described in connection with certain embodiments herein, it should be understood that various modifications and variations can be made without departing from the scope of the present disclosure, which would be apparent to those skilled in the art. Furthermore, such modifications and variations are intended to fall within the scope of the claims appended to this specification.

Claims

1. An optical device having a diffusion barrier layer, First electrode; A first charge transport layer formed on the first electrode; A perovskite layer formed on the first charge transport layer; A second charge transport layer formed on the perovskite layer; A diffusion barrier layer formed on the second charge transport layer; and A second electrode formed on the diffusion barrier layer; Including, The second electrode comprises Au, The above diffusion barrier layer is composed of a double layer structure of a buffer layer and an ITO layer, The above buffer layer is in direct contact with the second charge transport layer, An optical element in which the ITO layer is in direct contact with the second electrode.

2. In paragraph 1, The above buffer layer is an optical element comprising MoO3.

3. In paragraph 1, An optical device in which the above ITO layer is formed to a thickness of 100 nm or less.

4. In paragraph 1, An optical device wherein the second charge transport layer comprises Spiro-OMeTAD.

5. An optical module manufactured by combining a plurality of optical elements according to paragraph 1.

6. A fusion device manufactured by combining an optical module according to Article 5 and a secondary battery.

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