Semiconductor device, semiconductor device production method, and electronic apparatus

Abstract

This semiconductor device is provided with: a semiconductor component that has a semiconductor substrate, a protective substrate, and adhesive resin that is provided between the semiconductor substrate and the protective substrate and bonds the semiconductor substrate and the protective substrate; a mounting substrate on which the semiconductor component is mounted; and protective resin that contacts a side surface of the semiconductor component. A gap is formed at least between a portion of the adhesive resin and the protective resin.

Description

Semiconductor device, semiconductor device manufacturing method, and electronic device

[0001] The present technology relates to a semiconductor device including a semiconductor component, a method for manufacturing a semiconductor device, and an electronic device.

[0002] Conventionally, when a semiconductor package in which a silicon substrate and a glass substrate are bonded with an adhesive resin is mounted on a mounting substrate, a technique has been proposed in which an underfill is filled between the semiconductor package and the mounting substrate (for example, Patent Document 1).

[0003] International Publication No. 2016 / 203967

[0004] When the underfill is applied between the semiconductor package and the mounting substrate, it creeps up the sides of the semiconductor package due to capillary action. As a result, when the temperature drops after the underfill is thermally cured, the difference in thermal expansion coefficient between the underfill and the adhesive resin of the semiconductor package puts stress on the adhesive resin, which can cause problems such as cohesive failure, cracks, and peeling.

[0005] The present technology has been made in view of such problems, and aims to improve the reliability of semiconductor devices.

[0006] The semiconductor device according to the present technology includes a semiconductor component having a semiconductor substrate, a protective substrate, and an adhesive resin provided between the semiconductor substrate and the protective substrate to connect the semiconductor substrate and the protective substrate, a mounting substrate on which the semiconductor component is mounted, and a protective resin in contact with a side surface of the semiconductor component, wherein a gap is formed between at least a portion of the adhesive resin and the protective resin, thereby making it possible to reduce the load on the adhesive resin during the manufacturing process of the semiconductor device.

[0007] 1 is a schematic diagram of the structure of a semiconductor device; 2 is a cross-sectional view of a semiconductor device; 3 is a flowchart showing a method for manufacturing a semiconductor device; 4 is a diagram showing a process of applying an underfill material; 5 is a cross-sectional view showing a semiconductor device during a thermal curing treatment and a void formation treatment; 6 is a flowchart showing a modified example 1 of a method for manufacturing a semiconductor device; 7 is a cross-sectional view showing a semiconductor device during a thermal curing treatment and a void formation treatment; 8 is a flowchart showing a modified example 2 of a method for manufacturing a semiconductor device; 9 is a cross-sectional view showing a semiconductor device during a thermal curing treatment and a void formation treatment; 10 is a block diagram showing an example of a circuit configuration when the semiconductor device is a solid-state imaging element; 11 is a diagram showing the configuration of an imaging device; 12 is a modified example 1 of a semiconductor device; 13 is a modified example 2 of a semiconductor device.

[0008] Hereinafter, the embodiments will be described in the following order: <1. Semiconductor device of the embodiment> [1.1. Structure of the semiconductor device] [1.2. Method for manufacturing the imaging device] <2. Variation 1 of the method for manufacturing the imaging device> <3. Variation 2 of the method for manufacturing the imaging device> <4. Imaging device> [4.1. Configuration of the solid-state imaging element] [4.2. Configuration of the imaging device] <5. Variations> [5.1. Variation 1] [5.2. Variation 2] <6. Summary> <7. This technology>

[0009] 1. Semiconductor Device of the Embodiment 1.1. Structure of the Semiconductor Device Fig. 1 is a schematic diagram of the structure of a semiconductor device 1. Fig. 1A is a cross-sectional view of the semiconductor device 1, and Fig. 1B is a partially enlarged view of a portion X in Fig. 1A.

[0010] 1A and 1B, the semiconductor device 1 includes a CSP (Chip Scale Package) 11, which is an example of a semiconductor component, and a mounting substrate 12. In the semiconductor device 1, the CSP 11 is mounted on the mounting substrate 12 via solder balls 13. In the semiconductor device 1, an underfill 14 is filled between the CSP 11 and the mounting substrate 12.

[0011] The CSP 11 is composed of a semiconductor substrate 21, an adhesive resin 22, and a protective substrate 23. The semiconductor substrate 21 is mainly made of silicon (Si), and has an electronic circuit (pixels in the case of a solid-state imaging element) of the semiconductor device 1 formed on its front surface (the surface on the protective substrate 23 side), and a rewiring layer and electrode pads formed on its back surface (the surface on the mounting substrate 12 side), which are connected via TSVs (Through Silicon Vias).

[0012] The adhesive resin 22 is provided between the semiconductor substrate 21 and the protective substrate 23 to bond the protective substrate 23 to the semiconductor substrate 21. The adhesive resin 22 is made of a resin material such as acrylic resin, epoxy resin, or silicone resin that has a low glass transition temperature and a high thermal expansion coefficient in order to suppress warping in an aggregate state (e.g., wafer or panel state) before the CSP 11 is separated into individual pieces. The adhesive resin 22 is made of a resin material that has a glass transition temperature of, for example, 100°C or lower and a coefficient of thermal expansion (CTE) of, for example, α1: 80 ppm / °C or higher and α2: 100 ppm / °C or higher.

[0013] The protective substrate 23 is a substrate that protects the semiconductor substrate 21, and is made of a light-transmitting material, such as glass.

[0014] When the semiconductor device 1 is a solid-state imaging element, the CSP 11 may be provided with a microlens array, a color filter, etc. in addition to the semiconductor substrate 21, the adhesive resin 22, and the protective substrate 23. The microlens array, the color filter, etc. may be provided inside any of the semiconductor substrate 21, the adhesive resin 22, and the protective substrate 23, or between them.

[0015] The CSP 11 is mounted on the mounting substrate 12 so that the back surface of the semiconductor substrate 21 faces the mounting substrate 12. When the CSP 11 is mounted on the mounting substrate 12, the electrode pads formed on the CSP 11 and the electrodes formed on the mounting substrate 12 are connected by the solder balls 13.

[0016] In order to prevent cracks in the solder balls 13 due to shear stress caused by the difference in thermal expansion coefficient between the CSP 11 (semiconductor substrate 21) and the mounting substrate 12, underfill 14 is filled between the CSP 11 and the mounting substrate 12 so as to cover the solder balls 13.

[0017] The underfill 14 is formed continuously from between the CSP 11 and the mounting substrate 12 to the side surface of the CSP 11. The underfill 14 is formed to have a substantially triangular cross section on the side surface of the CSP 11, and is provided up to near the upper surface of the protection substrate 23.

[0018] The underfill 14 is made of an underfill material, which is a thermosetting resin with a high glass transition temperature and a low thermal expansion coefficient to ensure high reliability. The underfill material has a glass transition temperature of, for example, 125°C or higher and a thermal expansion coefficient of, for example, approximately 25 to 35 ppm / °C. Note that, below, the underfill material before it is thermally cured may also be referred to as underfill 14.

[0019] As will be described in detail later, when thermally curing the underfill 14, the semiconductor device 1 must be heated to a high temperature of 100°C or higher. Because the adhesive resin 22 is a resin material with a high coefficient of thermal expansion, while the underfill 14 has a low coefficient of thermal expansion, the adhesive resin 22 expands when the temperature rises and then attempts to shrink significantly when the temperature drops after the underfill 14 has hardened. If the underfill 14 and adhesive resin 22 are stuck together at this time, problems such as cohesive failure, cracks, and peeling may occur when the adhesive resin 22 attempts to shrink.

[0020] Therefore, in the semiconductor device 1, a gap 15 is formed between the adhesive resin 22 and the underfill 14. As a result, even if the adhesive resin 22 shrinks when the temperature drops, the underfill 14 and the adhesive resin 22 are not in contact with each other across the gap 15, which makes it possible to reduce the occurrence of defects such as cohesive failure, cracks, and peeling.

[0021] The void 15 is formed so that its thickness-wise length D1 is approximately the same as the thickness-wise length D2 of the adhesive resin 22. However, the thickness-wise length D1 of the void 15 may be shorter than the thickness-wise length D2 of the adhesive resin 22. For example, if the thickness-wise length D2 of the adhesive resin 22 is 50 μm, the thickness-wise length D1 of the void 15 may be approximately 5 μm to 50 μm. The thickness direction refers to the direction in which the CSP 11 and the mounting substrate 12 overlap, or the direction in which the semiconductor substrate 21, the adhesive resin 22, and the protection substrate 23 overlap.

[0022] This reduces the contact area between the underfill 14 and the adhesive resin 22, and also ensures the contact area between the underfill 14 and the side surfaces of the semiconductor substrate 21 and the protective substrate 23. This makes it possible to prevent defects such as cohesive failure, cracks, and peeling of the adhesive resin 22. Furthermore, stress concentration at the corners of the semiconductor substrate 21 that come into contact with the underfill 14 can be reduced, preventing peeling between the underfill 14 and the bottom surface of the semiconductor substrate 21 from developing into cracks in the solder balls 13.

[0023] Furthermore, in the semiconductor device 1 , by covering the underfill 14 up to the side surface of the protective substrate 23 , it is possible to suppress flare caused by light incident from the side surface of the protective substrate 23 .

[0024] The widthwise length T1 of the gap 15 should be such that the underfill 14 and the adhesive resin 22 do not come into contact with each other, and should be, for example, about 1 μm to 50 μm. In other words, the widthwise length T1 of the gap 15 should be equal to or less than the thicknesswise length D2 of the adhesive resin 22. The widthwise direction is the direction perpendicular to the side surface of the CSP 11.

[0025] Fig. 2 is a cross-sectional view of the semiconductor device 1. Fig. 2A is a cross-sectional view taken along line AA in Fig. 1A. Fig. 2B is a cross-sectional view taken along line BB in Fig. 1A. Fig. 2C is a cross-sectional view taken along line CC in Fig. 1A.

[0026] 2A, 2B, and 2C, the underfill 14 is formed over the entire outer edge of the CSP 11. Also, as shown in FIGS. 2A and 2C, the underfill 14 is formed so as to contact the entire outer edges of the semiconductor substrate 21 and the protection substrate 23.

[0027] 2B , the underfill 14 is formed so as not to come into contact with the entire outer edge of the adhesive resin 22. In other words, the void 15 is formed over the entire outer edge of the CSP 11. This makes it possible to reduce the occurrence of defects such as cohesive failure, cracks, and peeling of the adhesive resin 22.

[0028] The voids 15 may be formed only in the center of each side of the CSP 11. Because the thermal expansion of the adhesive resin 22 is large in the center of each side, forming the voids 15 in that portion can also reduce the occurrence of defects such as cohesive failure, cracks, and peeling.

[0029] [1.2. Manufacturing Method of Imaging Device] FIG. 3 is a flowchart showing a manufacturing method of the semiconductor device 1. In step S1, the CSP 11 is manufactured. Here, for example, a predetermined electronic circuit (such as an imaging element) is formed on a silicon wafer on which semiconductor substrates 21 are arranged in a two-dimensional matrix, and an adhesive resin 22 is applied to the formed electronic circuit. Thereafter, a protection substrate 23 is bonded on the adhesive resin 22, and TSVs, rewiring layers, and electrode pads are formed on the back surface of the semiconductor substrate 21 to electrically connect to the electronic circuit formed on the front surface. Thereafter, the CSP 11 is divided into chips by dicing. Note that various known methods and various methods to be developed in the future can be appropriately adopted as the manufacturing method of the CSP 11.

[0030] In step S2, the CSP 11 is mounted on the mounting substrate 12 via the solder balls 13. The CSP 11 and the mounting substrate 12 are soldered together using, for example, a nitrogen reflow device.

[0031] In step S3, an underfill material is applied between the CSP 11 and the mounting substrate 12. Figure 4 shows the process of applying the underfill material. Figure 4A shows the state before the underfill material is applied, and Figure 4B shows the state after the underfill material has been applied.

[0032] As shown in Fig. 4A, underfill material 24 is discharged from nozzle 25 on the side surface of CSP 11. Underfill material 24 is liquid, and when discharged from nozzle 25, it penetrates between CSP 11 and mounting substrate 12 by capillary action, as shown by the arrow in Fig. 4B. Underfill material 24 also creeps up the side surface of CSP 11 by capillary action. Therefore, underfill material 24 is applied between CSP 11 and mounting substrate 12 and to the side surface of CSP 11 to form underfill 14.

[0033] In step S4, a thermal curing process is performed to thermally cure the underfill 14. In the thermal curing process, the semiconductor device 1 is heated to about 125° C. in an oven, for example, to thermally cure the underfill material 24.

[0034] In step S5, a gap forming process is performed in which the heated semiconductor device 1 is cooled to form gaps 15 between the underfill 14 and the adhesive resin 22. Note that since the heat curing process in step S4 and the gap forming process in step S5 are performed in sequence within the same process, these may be treated collectively as the heat curing process or the gap forming process.

[0035] 5A and 5B are cross-sectional views showing the semiconductor device 1 during the thermal curing treatment and the void formation treatment. Fig. 5A is a cross-sectional view showing the semiconductor device 1 before the thermal curing treatment. Fig. 5B is a cross-sectional view showing the semiconductor device 1 immediately after the thermal curing treatment. Fig. 5C is a cross-sectional view showing the semiconductor device 1 after the void formation treatment.

[0036] 5A , before the thermal curing process, i.e., before the underfill 14 is cured, the CSP 11 has the semiconductor substrate 21, adhesive resin 22, and protective substrate 23, all of which are substantially flush with each other. The adhesive resin 22 and the underfill 14 are in contact with each other.

[0037] Thereafter, when the semiconductor device 1 is heated in the thermal curing process, the adhesive resin 22 has a high thermal expansion coefficient and the underfill 14 is in a liquid phase before hardening, so that the adhesive resin 22 expands outside the outer edges of the semiconductor substrate 21 and the protective substrate 23, as shown in FIG. 5B, and the adhesive resin 22 causes a depression in the protective resin (underfill 14).

[0038] When the underfill 14 is subsequently thermally cured in the thermal curing process, the underfill 14 hardens while the expanded portion of the adhesive resin 22 remains concave. When the semiconductor device 1 is subsequently cooled in the void formation process, the adhesive resin 22 thermally shrinks and returns to the size it was before the thermal curing process began, or to the concave state. At this time, a void 15 is formed between the underfill 14 and the adhesive resin 22, as shown in FIG. 5C .

[0039] It is possible to use a material for the underfill 14 such that the adhesion between the underfill 14 and the adhesive resin 22 is lower than the adhesion between the underfill 14 and the semiconductor substrate 21 and the adhesion between the underfill 14 and the protective substrate 23. This makes it possible to reduce the possibility that the underfill 14 and the adhesive resin 22 will adhere to each other when forming the void 15, preventing the void 15 from being formed.

[0040] 6 is a flowchart showing a first modification of the method for manufacturing the semiconductor device 1. In Fig. 6, the same steps as those in the method for manufacturing the semiconductor device 1 shown in Fig. 3 are assigned the same step numbers, and detailed descriptions thereof will be omitted.

[0041] 7A and 7B are cross-sectional views showing the semiconductor device 1 during the thermal curing treatment and the void forming treatment. Fig. 7A is a cross-sectional view showing the semiconductor device 1 before the thermal curing treatment. Fig. 7B is a cross-sectional view showing the semiconductor device 1 immediately after the thermal curing treatment. Fig. 7C is a cross-sectional view showing the semiconductor device 1 after the temperature has been lowered.

[0042] In step S1, the CSP 11 is manufactured. In step S2, the CSP 11 is mounted on the mounting substrate 12 via the solder balls 13.

[0043] 7A, in step S11, moisture 26 is impregnated into the side surfaces of adhesive resin 22. In order to impregnate the side surfaces of adhesive resin 22 with moisture 26, adhesive resin 22 is preferably made of a resin material such as an acrylic resin that has high moisture absorption.

[0044] Thereafter, in step S3, the underfill material 24 is filled between the CSP 11 and the mounting substrate 12. In step S4, a thermal curing process is performed to thermally cure the underfill 24.

[0045] As shown in Figure 7B, when the semiconductor device 1 is heated, the moisture 26 contained in the adhesive resin 22 evaporates, generating air bubbles between the underfill 14 and the adhesive resin 22. The generated air bubbles form voids 15 between the underfill 14 and the adhesive resin 22. At this time, as shown in Figure 7B, both the underfill 14 and the adhesive resin 22 become concave relative to each other. However, depending on the degree of hardening of the underfill 14 and the adhesive resin 22, only one of the underfill 14 and the adhesive resin 22 may become concave. In this way, in Modification 1, voids 15 are formed during the thermal curing process, and therefore the thermal curing process includes a space-forming process.

[0046] Thereafter, the heated semiconductor device 1 is cooled to maintain the gap 15 between the underfill 14 and the adhesive resin 22. As shown in Fig. 7C, when the semiconductor device 1 is cooled, the underfill 14 and the adhesive resin 22 thermally shrink, but the gap 15 remains.

[0047] 8 is a flowchart showing a second modification of the method for manufacturing the semiconductor device 1. In Fig. 8, the same steps as those in the method for manufacturing the semiconductor device 1 shown in Fig. 3 are denoted by the same step numbers, and detailed descriptions thereof will be omitted.

[0048] 9A and 9B are cross-sectional views showing the semiconductor device 1 during the thermal curing treatment and the void forming treatment. Fig. 9A is a cross-sectional view showing the semiconductor device 1 before the underfill material 24 is applied. Fig. 9B is a cross-sectional view showing the semiconductor device 1 after the underfill material 24 is applied. Fig. 9C is a cross-sectional view showing the semiconductor device 1 after the temperature has been lowered.

[0049] In step S1, the CSP 11 is manufactured. In step S2, the CSP 11 is mounted on the mounting substrate 12 via the solder balls 13.

[0050] In step S21, as shown in FIG. 9A, a hydrophobic member 27 having hydrophobic properties is applied to the side surface of the adhesive resin 22.

[0051] Thereafter, in step S3, underfill material 24 is filled between CSP 11 and mounting substrate 12. At this time, as shown in Fig. 9B, because hydrophobic member 27 has been applied to the side surface of adhesive resin 22, underfill material 24 is repelled by hydrophobic member 27 and moves away from hydrophobic member 27 to form void 15. In this way, in Modification 2, void 15 is formed in the process of applying underfill material 24, and therefore the process of applying underfill material 24 includes a space forming process.

[0052] In step S4, a thermal curing process is performed to thermally cure the underfill material. Thereafter, the heated semiconductor device 1 is cooled to maintain the gap 15 between the underfill 14 and the adhesive resin 22. As shown in Fig. 9C, when the semiconductor device 1 is cooled, the underfill 14 and the adhesive resin 22 thermally shrink, but the gap 15 remains.

[0053] 10 is a block diagram showing an example of a circuit configuration when the semiconductor device 1 is a solid-state imaging element. A CMOS (Complementary Metal Oxide Semiconductor) solid-state imaging element is an example of the semiconductor device 1. When the semiconductor device 1 is a solid-state imaging element, as shown in FIG. 10 , the semiconductor device 1 is configured to include a pixel array section 32 in which a plurality of pixels 31 are formed, a vertical drive circuit 33, a column signal processing circuit 34, a horizontal drive circuit 35, an output circuit 36, and a control circuit 37.

[0054] Each pixel 31 is configured to have a photoelectric conversion element and a plurality of pixel transistors. The pixel array section 32 is configured to have a plurality of pixels 31 arranged in both the row and column directions. The pixel array section 32 is configured to have an effective pixel area that actually receives light, amplifies signal charges generated by photoelectric conversion, and reads them out to a column signal processing circuit 34, and a black reference pixel area (not shown) for outputting optical black that serves as a reference for the black level. The black reference pixel area is usually formed on the periphery of the effective pixel area.

[0055] The control circuit 37 generates operating clocks and control signals for the vertical drive circuit 33, the column signal processing circuit 34, and the horizontal drive circuit 35 based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock, and outputs them to the vertical drive circuit 33, the column signal processing circuit 34, and the horizontal drive circuit 35.

[0056] The vertical drive circuit 33 is configured by, for example, a shift register, and sequentially selects and scans each pixel 31 in the pixel array section 32 in the vertical direction on a row-by-row basis. Then, pixel signals based on signal charges obtained in each pixel 31 according to the amount of received light are output to the column signal processing circuit 34 through vertical signal lines 38.

[0057] The column signal processing circuit 34 is arranged, for example, for each column of pixels 31, and performs signal processing such as noise removal and signal amplification for each pixel column on the basis of signals from a black reference pixel area (not shown, but formed around the effective pixel area) for signals output from one row of pixels 31. A horizontal selection switch (not shown) is provided between the output stage of the column signal processing circuit 34 and the horizontal signal line 39.

[0058] The horizontal drive circuit 35 is configured, for example, by a shift register, and sequentially outputs horizontal scanning pulses to select each of the column signal processing circuits 34 in turn, causing each of the column signal processing circuits 34 to output a pixel signal to a horizontal signal line 39.

[0059] The output circuit 36 ​​processes the signals sequentially supplied from each of the column signal processing circuits 34 through the horizontal signal line 39 and outputs the processed signals.

[0060] 11 is a diagram showing the configuration of an imaging device 40. As shown in Fig. 11, the imaging device 40, which uses the semiconductor device 1 as a solid-state imaging element, includes an optical system 41 that causes light to be incident on the semiconductor device 1 (solid-state imaging element), a signal processing unit 42 that performs predetermined signal processing using a signal that corresponds to the amount of received light and is output from the semiconductor device 1, and a control unit 43 that performs overall control of the imaging device 40.

[0061] The imaging device 40 also includes a storage unit 44 that stores image data obtained based on the light receiving signal, a communication unit 45 that transmits the image data to the outside, etc. The imaging device 40 may also be provided with a display unit that is used to check the image after capture.

[0062] The optical system 41 includes various lenses such as a cover lens, a zoom lens, and a focus lens, as well as an iris mechanism. The optical system 41 guides light (incident light) from the subject and focuses it on the light-receiving surface of the semiconductor device 1.

[0063] The signal processing unit 42 performs various necessary processes such as pre-processing, re-mosaic processing and demosaic processing (to be described later), YC generation processing, resolution conversion processing, and codec processing on the RAW image data supplied from the semiconductor device 1. The pre-processing includes clamping processing for clamping the R, G, and B black levels of the captured image signal to predetermined levels, and correction processing between the R, G, and B color channels.

[0064] The control unit 43 is configured with a microcomputer having, for example, a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), etc. The CPU executes various processes in accordance with programs stored in the ROM or programs loaded into the RAM, thereby realizing overall control of the imaging device 40 by the control unit 43.

[0065] The control unit 43 issues instructions to the driver unit 46 to drive the zoom lens, focus lens, diaphragm mechanism, etc., which constitute the optical system 41. The driver unit 46 supplies drive voltages to each unit, such as an actuator, based on instructions from the control unit 43, thereby realizing the movement of the focus lens and zoom lens, the opening and closing of the diaphragm blades of the diaphragm mechanism, etc.

[0066] The control unit 43 controls writing and reading of various data to and from the storage unit 44. The control unit 43 also transmits and receives information to and from an external information processing device via the communication unit 45.

[0067] 5. Modifications Note that the embodiment is not limited to the specific example described above, and various modifications can be made.

[0068] 12 shows a first modification of the semiconductor device. In the above embodiment, an example in which the semiconductor device 1 includes the CSP 11 has been described. However, the semiconductor device 1 may be configured to form the gap 15 when mounting something other than the CSP 11 on the substrate. In the first modification, an example in which the semiconductor device is a sensor device 100 will be described.

[0069] 12, the sensor device 100 includes a sensor substrate 101, a transparent substrate 102, an adhesive resin 103, a die attach material 104, an organic substrate 105, and solder balls 106. The sensor substrate 101, the transparent substrate 102, and the adhesive resin 103 are formed as a semiconductor component 110.

[0070] A sensor circuit is formed on the sensor substrate 101. A transparent substrate 102 is bonded to the sensor substrate 101 via an adhesive resin 103. The adhesive resin 103, like the adhesive resin 22, is a resin with a low glass transition temperature and a high thermal expansion coefficient.

[0071] The sensor substrate 101 is fixed to an organic substrate 105 by a die attach material 104. The organic substrate 105 is a so-called printed circuit board.

[0072] In the sensor device 100, external connection terminals formed on the surface of the sensor substrate 101 are electrically connected to the surface of the organic substrate 105 using a wire bonding method.

[0073] Considering the weak mechanical strength of the conductive member 108, which is a bonding wire, and the moisture resistance of the adhesive resin 103, a sealing resin 109 (protective resin) is filled between the side surface of the semiconductor component 110 and the organic substrate 105. Like the underfill 14, the sealing resin 109 is a resin with a high glass transition temperature and a low coefficient of thermal expansion. The sealing resin 109 is formed using a technique such as potting to protect the conductive member 108, which is a bonding wire.

[0074] A gap 111 is formed between the adhesive resin 103 and the sealing resin 109. The gap 111 can be formed by the same method as the gap 15 in the semiconductor device 1.

[0075] 13 shows a semiconductor device according to a second modification. In the second modification, an example in which the semiconductor device is a display device 200 will be described.

[0076] 13, a display device 200 includes a display substrate 201, a transparent substrate 202, an adhesive resin 203, a die attach material 204, and a mounting substrate 205. The display substrate 201, the transparent substrate 202, and the adhesive resin 203 are formed as a semiconductor component 210. The mounting substrate 205 is, for example, a flexible substrate.

[0077] A display circuit is formed on the display substrate 201. A transparent substrate 202 is adhered to the display substrate 201 via an adhesive resin 203. The adhesive resin 203, like the adhesive resin 22, is a resin with a low glass transition temperature and a high thermal expansion coefficient.

[0078] The display substrate 201 is fixed to a mounting substrate 205 by a die attach material 204 .

[0079] In the display device 200, external connection terminals 206 formed on the surface of the display substrate 201 are electrically connected to the surface of the mounting substrate 205 using wire bonding.

[0080] Considering the weak mechanical strength of the conductive member 207, which is the bonding wire, and the moisture resistance of the adhesive resin 203, a sealing resin 208 (protective resin) is filled between the side surface of the semiconductor component 210 and the mounting substrate 205. The sealing resin 208 is a resin with a high glass transition temperature and a low thermal expansion coefficient, similar to the underfill 14. The sealing resin 208 is formed using a technique such as potting to protect the conductive member 207, which is the bonding wire.

[0081] A gap 209 is formed between the adhesive resin 203 and the sealing resin 208. The gap 209 can be formed by the same method as the gap 15 in the semiconductor device 1.

[0082] In this way, when mounting semiconductor components 110, 210 other than CSP11 on the organic substrate 105 and the mounting substrate 205, even if gaps 111, 209 are formed between the adhesive resin 103, 203 and the sealing resin 109, 208, it is possible to reduce the occurrence of defects such as cohesive failure, cracks, and peeling of the adhesive resin 103, 203.

[0083] 6. Summary As described above, the semiconductor device 1 (sensor device 100, display device 200) according to the embodiment includes a semiconductor component (CSP 11) having a semiconductor substrate 21, a protective substrate 23, and adhesive resin 22 disposed between the semiconductor substrate 21 and the protective substrate 23 to bond the semiconductor substrate 21 and the protective substrate 23; a mounting substrate 12 on which the semiconductor component (CSP 11) is mounted; and a protective resin (underfill 14) in contact with the side surface of the semiconductor component (CSP 11). This forms a gap 15 between at least a portion of the adhesive resin 22 and the protective resin (underfill 14). This reduces stress on the adhesive resin 22, even if the adhesive resin 22 thermally shrinks during cooling after the underfill 14 is thermally cured. This reduces the occurrence of defects such as cohesive failure, cracking, and peeling of the adhesive resin 22. This improves the reliability of the semiconductor device 1.

[0084] The semiconductor component (CSP11) is a chip-size package mounted on a mounting substrate 12 via solder balls 13, and a protective resin (underfill 14) is formed between the semiconductor component (CSP11) and the mounting substrate 12 and on the side surfaces of the semiconductor component (CSP11). The underfill 14 is provided to prevent cracks in the solder balls 13 due to shear stress caused by differences in the thermal expansion coefficients of the CSP11 and the mounting substrate 12. The underfill 14 also reduces stress concentration at the corners of the semiconductor substrate 21 where the underfill 14 comes into contact, thereby preventing peeling between the underfill 14 and the bottom surface of the semiconductor substrate 21 from developing into cracks in the solder balls 13.

[0085] The protective resin (underfill 14) is made of a resin having a lower coefficient of thermal expansion than the adhesive resin 22. This reduces fluctuations in the physical properties of the underfill 14 due to temperature changes, and higher reliability can be achieved.

[0086] The protective resin (underfill 14) is made of a material that has lower adhesion to the adhesive resin 22 than the semiconductor substrate 21 and the protective substrate 23. This makes it possible for the underfill 14 and the adhesive resin 22 to easily separate when the adhesive resin 22 thermally shrinks as the temperature drops, and makes it possible to easily form the gap 15.

[0087] The gap 15 is formed over the entire outer edge of the semiconductor component (CSP 11), thereby reducing stress when the adhesive resin 22 thermally shrinks over the entire outer edge of the CSP 11.

[0088] The voids 15 are formed in the center of each side of the semiconductor component (CSP 11), thereby reducing the stress in the center of each side of the CSP 11, where the stress is highest when the adhesive resin 22 thermally shrinks.

[0089] The length of the gap 15 in the thickness direction is equal to or less than the thickness of the adhesive resin 22. Even under these conditions, the stress caused by the thermal contraction of the adhesive resin 22 can be reduced.

[0090] The length of the gap 15 in the direction perpendicular to the side surface of the semiconductor component is equal to or less than half the thickness of the adhesive resin. Even under these conditions, the stress caused by thermal contraction of the adhesive resin 22 can be reduced.

[0091] In the method for manufacturing the semiconductor device, a semiconductor component (CSP11) having a semiconductor substrate 21, a protective substrate 23, and adhesive resin 22 provided between the semiconductor substrate 21 and the protective substrate 23 and connecting the semiconductor substrate 21 and the protective substrate 23 is mounted on a mounting substrate 12, and a protective resin (underfill 14) is filled on the side of the semiconductor component (CSP11), and a gap 15 is formed between at least a part of the adhesive resin 22 and the protective resin (underfill 14). This manufacturing method can also improve the reliability of the semiconductor device 1.

[0092] The protective resin (underfill 14) is made of a material that has lower adhesion to the adhesive resin 22 than the semiconductor substrate 21 and the protective substrate 23, and in the heat curing process for thermally curing the protective resin (underfill 14), the adhesive resin 22 expands so that the protective resin (underfill 14) is recessed, and when cooled after the heat curing process, the adhesive resin 22 contracts, forming the voids 15. By manufacturing the semiconductor device 1 in this manner, the voids 15 can be easily formed.

[0093] With the adhesive resin 22 containing moisture 26 on its side, the protective resin (underfill 14) is filled onto the side of the semiconductor component (CSP 11), and the moisture 26 is evaporated during a thermal curing process for thermally curing the protective resin (underfill 14), forming voids 15. With this manufacturing method as well, voids 15 can be easily formed.

[0094] With the hydrophobic member 27 formed on the side surface of the adhesive resin 22, the protective resin (underfill 14) is filled on the side surface of the semiconductor component (CSP 11), thereby forming the void 15. With this manufacturing method as well, the void 15 can be easily formed.

[0095] The electronic device (imaging device 40) includes a solid-state imaging element (semiconductor device 1) and an optical system 41 that directs incident light to the solid-state imaging element. The solid-state imaging element (semiconductor device 1) includes a semiconductor component (CSP11) having a semiconductor substrate 21, a protective substrate 23, and adhesive resin 22 provided between the semiconductor substrate 21 and the protective substrate 23 and bonding the semiconductor substrate 21 and the protective substrate 23 together. A mounting substrate 12 on which the semiconductor component (CSP11) is mounted, and protective resin (underfill 14) in contact with the side surface of the semiconductor component (CSP11) forms a gap 15 between at least a portion of the adhesive resin 22 and the protective resin (underfill 14). This electronic device also improves the reliability of the semiconductor device 1.

[0096] The effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0097] <7. Present Technology> The present technology can also be configured as follows. (1) A semiconductor device comprising: a semiconductor component having a semiconductor substrate, a protective substrate, and an adhesive resin provided between the semiconductor substrate and the protective substrate and bonding the semiconductor substrate and the protective substrate; a mounting substrate on which the semiconductor component is mounted; and a protective resin in contact with a side surface of the semiconductor component, wherein a gap is formed between at least a portion of the adhesive resin and the protective resin. (2) The semiconductor device according to (1), wherein the semiconductor component is a chip-size package and is mounted on the mounting substrate via solder balls, and the protective resin is formed between the semiconductor component and the mounting substrate and on the side surface of the semiconductor component. (3) The semiconductor device according to (1) or (2), wherein the protective resin is made of a resin having a lower thermal expansion coefficient than the adhesive resin. (4) The semiconductor device according to (3), wherein the protective resin is made of a material having lower adhesion to the adhesive resin than the semiconductor substrate and the protective substrate. (5) The semiconductor device according to any one of (1) to (4), wherein the void is formed over the entire outer edge of the semiconductor component. (6) The semiconductor device according to any one of (1) to (4), wherein the void is formed in the center of each side of the semiconductor component. (7) The semiconductor device according to any one of (1) to (6), wherein the length of the void in the thickness direction is equal to or less than the thickness of the adhesive resin. (8) The semiconductor device according to any one of (1) to (7), wherein the length of the void in a direction perpendicular to the side surface of the semiconductor component is equal to or less than half the thickness of the adhesive resin. (9) A method for manufacturing a semiconductor device, wherein a semiconductor component having a semiconductor substrate, a protective substrate, and adhesive resin provided between the semiconductor substrate and the protective substrate and connecting the semiconductor substrate and the protective substrate is mounted on a mounting board, wherein protective resin is filled into the side surface of the semiconductor component, and wherein a void is formed between at least a portion of the adhesive resin and the protective resin.(10) The method for manufacturing a semiconductor device according to (9), wherein the protective resin is made of a material that has lower adhesion to the adhesive resin than the semiconductor substrate and the protective substrate, wherein a heat curing treatment for thermally curing the protective resin causes the adhesive resin to expand so that the protective resin is recessed, and wherein the adhesive resin is contracted during cooling after the heat curing treatment to form the void. (11) The method for manufacturing a semiconductor device according to (9), wherein the protective resin is filled onto the side surfaces of the semiconductor component with moisture contained on the side surfaces of the adhesive resin, and wherein the moisture is evaporated during a heat curing treatment for thermally curing the protective resin to form the void. (12) The method for manufacturing a semiconductor device according to (9), wherein a hydrophobic member is formed on the side surfaces of the adhesive resin and the protective resin is filled onto the side surfaces of the semiconductor component with the adhesive resin, thereby forming the void. (13) An electronic device comprising: a solid-state imaging element; and an optical system that directs incident light to the solid-state imaging element, wherein the solid-state imaging element comprises: a semiconductor component having a semiconductor substrate, a protective substrate, and an adhesive resin provided between the semiconductor substrate and the protective substrate and adhering the semiconductor substrate and the protective substrate; a mounting substrate on which the semiconductor component is mounted; and a protective resin in contact with a side surface of the semiconductor component, wherein a gap is formed between at least a portion of the adhesive resin and the protective resin.

[0098] REFERENCE SIGNS LIST 1 semiconductor device 11 CSP 12 mounting substrate 13 solder ball 14 underfill 15 void 21 semiconductor substrate 22 adhesive resin 23 protective substrate

Claims

1. A semiconductor device comprising: a semiconductor component having a semiconductor substrate, a protective substrate, and an adhesive resin provided between the semiconductor substrate and the protective substrate to bond the semiconductor substrate and the protective substrate; a mounting substrate on which the semiconductor component is mounted; and a protective resin in contact with a side surface of the semiconductor component, wherein a gap is formed between at least a portion of the adhesive resin and the protective resin.

2. The semiconductor device according to claim 1, wherein the semiconductor component is a chip-size package and is mounted on the mounting board via solder balls, and the protective resin is formed between the semiconductor component and the mounting board and on the side surfaces of the semiconductor component.

3. The semiconductor device according to claim 1, wherein the protective resin is made of a resin having a lower coefficient of thermal expansion than the adhesive resin.

4. The semiconductor device according to claim 3, wherein the protective resin is made of a material that has lower adhesion to the adhesive resin than the semiconductor substrate and the protective substrate.

5. The semiconductor device according to claim 1, wherein the void is formed over the entire outer edge of the semiconductor component.

6. The semiconductor device according to claim 1, wherein the voids are formed in the center of each side of the semiconductor component.

7. The semiconductor device according to claim 1, wherein the length of the gap in the thickness direction is equal to or less than the thickness of the adhesive resin.

8. The semiconductor device according to claim 1, wherein the length of the gap in a direction perpendicular to the side surface of the semiconductor component is equal to or less than half the thickness of the adhesive resin.

9. A method for manufacturing a semiconductor device, comprising: mounting a semiconductor component having a semiconductor substrate, a protective substrate, and an adhesive resin provided between the semiconductor substrate and the protective substrate and connecting the semiconductor substrate and the protective substrate on a mounting substrate; filling the protective resin onto the side surfaces of the semiconductor component; and forming a gap between at least a portion of the adhesive resin and the protective resin.

10. A method for manufacturing a semiconductor device as described in claim 9, wherein the protective resin is made of a material that has lower adhesion to the adhesive resin than the semiconductor substrate and the protective substrate, the adhesive resin is expanded so as to be recessed during a heat curing process for thermally hardening the protective resin, and the adhesive resin is contracted during cooling after the heat curing process to form the void.

11. The method for manufacturing a semiconductor device according to claim 9, wherein the protective resin is filled onto the side surfaces of the semiconductor component while the adhesive resin contains moisture on the side surfaces, and the moisture is evaporated during a thermal curing process for thermally curing the protective resin, thereby forming the voids.

12. The method for manufacturing a semiconductor device according to claim 9, wherein the gap is formed by filling the side surface of the semiconductor component with the protective resin in a state where a hydrophobic member is formed on the side surface of the adhesive resin.

13. An electronic device comprising: a solid-state imaging element; and an optical system that directs incident light onto the solid-state imaging element, wherein the solid-state imaging element comprises: a semiconductor component having a semiconductor substrate, a protective substrate, and an adhesive resin provided between the semiconductor substrate and the protective substrate and adhering the semiconductor substrate and the protective substrate; a mounting substrate on which the semiconductor component is mounted; and a protective resin in contact with a side surface of the semiconductor component, wherein a gap is formed between at least a portion of the adhesive resin and the protective resin.

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