Thin film transistor driving structure and preparation method therefor

Abstract

Disclosed in the present invention are a thin film transistor driving structure and a preparation method therefor. The thin film transistor driving structure comprises: a substrate; a bottom electrode, which is located on the substrate; an insulating layer, which is located on the bottom electrode; a top electrode, which comprises a first electrode located on the insulating layer, a second electrode passing through the insulating layer and electrically connected to the bottom electrode, and a third electrode located in the insulating layer; and an active layer, which is located on the insulating layer and is electrically connected to each of the first electrode and the second electrode. By means of arranging the active layer on the top of the thin film transistor driving structure, the present invention avoids the impact of the preparation process of the insulating layer, a pixel electrode, etc., on the active layer, thereby improving the stability of the thin film transistor driving structure, and reducing the difficulty of integration and application of the thin film transistor driving structure.

Description

Thin film transistor driving structure and preparation method thereof

[0001] The present application claims priority to the Chinese patent application No. 2024109933192, filed on July 23, 2024, and entitled "Thin film transistor driving structure and preparation method thereof", the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0002] The present application belongs to the technical field of display devices, and specifically relates to a thin film transistor driving structure and a preparation method thereof. BACKGROUND

[0003] The thin film transistor (TFT) driving structure is a basic component element of a display device. Currently, the materials commonly used for the TFT driving structure in display devices mainly include amorphous silicon (a-Si) and low-temperature polysilicon (LTPS). When the TFT driving structure is prepared based on these two materials, the equipment used is particularly expensive, the process is complex, and the adaptability to flexible substrates is poor (in the preparation process of a-Si and LTPS TFT arrays, high temperature needs to be used, and flexible substrates often have poor high-temperature resistance), which limits the application of the TFT driving structure in the field of new flexible display devices.

[0004] With the rapid development of display devices, more and more materials are applied in the field of display devices to obtain thin film transistors with more excellent performance. Organic semiconductors (OSC), perovskite and other materials have shown good application potential in the field of flexible devices due to their excellent characteristics. Under the background of low carbon and cost reduction, organic thin film transistors (OTFT) based on organic semiconductors have attracted more and more attention from the industry.

[0005] However, for the promotion and application of the industry, the thin film transistor based on organic semiconductor or perovskite still has many problems. For example, one of the most critical factors in OTFT technology is that there is still a big gap between the device performance (the most critical performance parameter is the mobility, which shows the speed of carrier transmission, which determines the switching rate of TFT) exhibited in the actual integrated application and the laboratory prototype device, which is only comparable to the mobility level of amorphous silicon. In addition, the laboratory device is often simple in structure, but in the actual display device application, the TFT device needs to be connected with the pixel electrode after preparation, that is, after the TFT device is prepared, a multi-step process is still needed to realize the application of the display device. In the process of connecting the pixel electrode, the characteristics of the low-temperature solution processing of the organic semiconductor become a double-edged sword. Although it can bring the advantages of low cost and easy processing, it is also more sensitive to the subsequent processing process, which will greatly affect the performance of the device, and the device performance will decline several times or even be directly damaged. Therefore, the integrated application of the OTFT driving structure puts higher requirements on the subsequent processing process, which also makes it difficult to adapt to the existing industrial process route, which is one of the important reasons why the existing industry accepts OTFT technology (if OTFT technology is used, the existing industrial line needs to be greatly changed, and the existing equipment investment for TFT preparation process line is very high).

[0006] Therefore, in view of the above technical problems, it is necessary to provide a thin film transistor driving structure and a preparation method thereof. SUMMARY

[0007] The purpose of the present application is to provide a thin film transistor driving structure and a preparation method thereof.

[0008] In order to achieve the above-mentioned purpose, the technical scheme provided by an embodiment of the present application is as follows:

[0009] A thin film transistor driving structure comprises:

[0010] a substrate;

[0011] a bottom electrode located on the substrate;

[0012] an insulating layer located on the bottom electrode;

[0013] a top electrode comprising a first electrode located on the insulating layer, a second electrode penetrating through the insulating layer and electrically connected with the bottom electrode, and a third electrode located in the insulating layer;

[0014] an active layer located on the insulating layer and electrically connected with the first electrode and the second electrode respectively.

[0015] In an embodiment, the active layer is located between the first electrode and the second electrode and at least partially covers the top and / or sidewall of the first electrode and the second electrode.

[0016] In an embodiment, the insulating layer comprises a first insulating layer and a second insulating layer stacked in sequence on the bottom electrode, the third electrode is located between the first insulating layer and the second insulating layer, the first electrode and the second electrode are located on the second insulating layer, and the second electrode is electrically connected with the bottom electrode through the first insulating layer and the second insulating layer, the first insulating layer is a single-layer insulating layer or a combination of multiple-layer insulating layers, and the second insulating layer is a single-layer insulating layer or a combination of multiple-layer insulating layers.

[0017] In an embodiment, a sacrificial layer is arranged between the substrate and the bottom electrode, and the sacrificial layer is used to release or transfer the bottom electrode and the structure above the bottom electrode from the substrate.

[0018] In an embodiment, an encapsulation layer covering the first electrode, the second electrode, the active layer and the insulating layer is arranged on the insulating layer.

[0019] In an embodiment, the bottom electrode is a pixel electrode.

[0020] In an embodiment, the active layer is an organic semiconductor layer, a perovskite layer or a carbon nanotube layer.

[0021] In an embodiment, the substrate is an electronic paper, an OLED light-emitting device, an LED light-emitting device, a Mini LED light-emitting device, a Micro LED light-emitting device, a QLED light-emitting device or an LCD light-emitting device.

[0022] In an embodiment, the substrate is any one or more of a textile material substrate, a silicon wafer, a glass sheet, a paper sheet, a polyvinyl alcohol film, a polydimethylsiloxane film, a polyimide film, a PET plastic film, a polyethylene film, a polyurethane film, a circuit board or a flexible circuit board.

[0023] Another embodiment of the present application provides a technical solution as follows:

[0024] A preparation method of a thin film transistor driving structure, the preparation method comprising the following steps:

[0025] S1, preparing an insulating layer and a top electrode on a bottom electrode, the top electrode comprising a first electrode on the insulating layer, a second electrode penetrating through the insulating layer and electrically connected with the bottom electrode, and a third electrode in the insulating layer;

[0026] S2, preparing an active layer electrically connected with the first electrode and the second electrode on the insulating layer.

[0027] In an embodiment, the step S1 comprises the following steps:

[0028] S101, preparing a first insulating layer on the bottom electrode;

[0029] Preparation of a third electrode on the first insulating layer;

[0030] Preparation of a second insulating layer on the first insulating layer and the surface of the third electrode, the second insulating layer covering the third electrode and the first insulating layer;

[0031] Preparation of a first electrode and a second electrode electrically connected with the bottom electrode through the first insulating layer and the second insulating layer on the second insulating layer.

[0032] In one embodiment, the preparation method of the second electrode is:

[0033] After the preparation of the second insulating layer is completed, etching the first insulating layer and the second insulating layer to form a through hole reaching the bottom electrode, and depositing a metal electrode on the through hole and the second insulating layer; or,

[0034] After the preparation of the first insulating layer is completed, etching the first insulating layer to form a first through hole reaching the bottom electrode and depositing a first metal electrode in the first through hole; after the preparation of the second insulating layer is completed, etching the second insulating layer to form a second through hole reaching the first insulating layer and connected with the first through hole, and depositing a second metal electrode connected with the first metal electrode in the second through hole; and finally depositing a third metal electrode connected with the second metal electrode on the second insulating layer.

[0035] In one embodiment, the bottom electrode is prepared on the substrate.

[0036] Compared with the prior art, the present application has the following beneficial effects:

[0037] In the present application, the active layer is prepared last, which greatly avoids the influence of the subsequent processing technology on the active layer, improves the stability of the thin film transistor driving structure, and reduces the integration difficulty of the thin film transistor driving structure.

[0038] The thin film transistor driving structure in the present application has modular characteristics, and is widely used in various application scenarios. The research and optimization of the process routes between different modules can be carried out synchronously, which greatly promotes the integration efficiency of the thin film transistor driving structure. At the same time, the preparation process of the thin film transistor driving structure in the present application can be compatible with the production line of the thin film transistor driving structure in the prior art. BRIEF DESCRIPTION OF DRAWINGS

[0039] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed in the embodiments or the prior art description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments described in the present application, and those skilled in the art can also obtain other drawings according to these drawings without creating any creative labor.

[0040] Fig. 1 is a schematic diagram of a thin film transistor driving structure in a comparative example of the present application;

[0041] Fig. 2 is a schematic diagram of a thin film transistor driving structure in a comparative example of the present application;

[0042] Fig. 3 is a schematic diagram of a thin film transistor driving structure in an embodiment of the present application;

[0043] Figs. 4a-4b are process flow diagrams of a method for preparing a thin film transistor driving structure in an embodiment of the present application;

[0044] Fig. 5 is a schematic diagram of a thin film transistor driving structure in an embodiment of the present application;

[0045] Fig. 6a is a schematic diagram of a structure of a thin film transistor in the present application;

[0046] Fig. 6b is a schematic diagram of a structure of a thin film transistor connected to a bottom electrode in the present application;

[0047] Fig. 6c is a schematic diagram of a structure of a thin film transistor connected to a driven module in the present application.

[0048] Explanation of main reference numerals:

[0049] 10 - substrate, 20 - bottom electrode, 301 - first insulating layer, 302 - second insulating layer, 401 - source electrode, 402 - drain electrode, 403 - gate electrode, 50 - active layer, 60 - encapsulating layer, 70 - sacrificial layer. DETAILED DESCRIPTION

[0050] In order to make the person skilled in the art better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by the person skilled in the art without creative labor should belong to the protection scope of the present application.

[0051] The present application discloses a thin film transistor driving structure, comprising:

[0052] a substrate;

[0053] a bottom electrode on the substrate;

[0054] an insulating layer on the pixel electrode;

[0055] a top electrode comprising a first electrode on the insulating layer, a second electrode penetrating through the insulating layer and electrically connected to the pixel electrode, and a third electrode in the insulating layer;

[0056] An active layer is disposed on the insulating layer and electrically connected with the first electrode and the second electrode respectively.

[0057] The application further discloses a preparation method of the thin film transistor driving structure.

[0058] S1, preparing an insulating layer and a top electrode on a bottom electrode, wherein the top electrode comprises a first electrode disposed on the insulating layer, a second electrode penetrating through the insulating layer and electrically connected with the bottom electrode, and a third electrode disposed in the insulating layer;

[0059] S2, preparing an active layer on the insulating layer and electrically connected with the first electrode and the second electrode respectively.

[0060] The application is further described below in combination with specific examples.

[0061] Comparative Example 1

[0062] As shown in Fig. 1, the thin film transistor driving structure in the comparative example comprises:

[0063] a substrate 10;

[0064] a first insulating layer 301 disposed on the substrate 10;

[0065] a top electrode comprising a source electrode 401 and a drain electrode 402 disposed on the first insulating layer 301, and a gate electrode 403 disposed in the first insulating layer 301;

[0066] an active layer 50 disposed on the first insulating layer 301 and electrically connected with the source electrode 401 and the drain electrode 402, and at least partially in contact with the source electrode 401 and the drain electrode 402;

[0067] a second insulating layer 302 disposed on the first insulating layer 301 and covering the first insulating layer 301, the active layer 50, the source electrode 401 and part of the drain electrode 402, and a through hole is arranged on the second insulating layer 302;

[0068] a bottom electrode 20 disposed on the second insulating layer 302 and electrically connected with the drain electrode 402 through the through hole.

[0069] The thin film transistor driving structure in the present comparative example is a traditional inorganic thin film transistor driving structure, the active layer 50 is an amorphous silicon layer or a low-temperature polysilicon layer, and the bottom electrode 20 is a pixel electrode of a display device. The material used by the traditional inorganic thin film transistor driving structure has excellent processing stability, so the traditional inorganic thin film transistor is mostly in a bottom-gate top-contact device structure, that is, the gate electrode is located below the active layer, and the source electrode and the drain electrode are located above the active layer. The traditional inorganic thin film transistor driving structure can fully exert the advantages of the photolithography process, and can improve the electrode contact of the device, thereby maximizing the performance and integration of the device. However, with the further development of display devices, the disadvantages of the traditional inorganic thin film transistor driving structure become more and more obvious, mainly including the following points:

[0070] 1. The traditional inorganic thin film transistor driving structure production line has high equipment investment, complex preparation process and high energy consumption, so only a few large factories can supply, resulting in high price and low selectivity;

[0071] 2. The thin film transistor used in the traditional inorganic thin film transistor driving structure currently in mass production is mainly an amorphous silicon thin film transistor, and the mobility of the amorphous silicon thin film transistor is about 0.4, which leads to low refresh rate and low working current of the device. In order to eliminate the influence of low mobility, the single device needs to be enlarged, so the integration of the device in unit area is low, resulting in low resolution of the device;

[0072] 3. Due to the non-uniform quality of amorphous silicon film and the many defect states caused by its amorphous characteristics, the performance of the device is unstable and the screen brightness is uneven during use;

[0073] 4. The preparation process of the traditional inorganic thin film transistor driving structure has a high-temperature preparation process, which is difficult to adapt to flexible substrates;

[0074] 5. Fluorinated gas is used in the preparation process of the traditional inorganic thin film transistor driving structure, and the by-products produced will cause environmental pollution.

[0075] Comparative Example 2

[0076] As shown in FIG. 2, the thin film transistor driving structure in the present comparative example is a conventional structure of an organic thin film transistor driving structure, which comprises:

[0077] a substrate 10;

[0078] a first insulating layer 301 located on the substrate 10;

[0079] a top electrode, comprising a source electrode 401, a drain electrode 402 located on the first insulating layer 301, and a gate electrode 403 in the first insulating layer 301;

[0080] An active layer 50 is located on the first insulating layer 301 and covers at least part of the surface of the source electrode 401 and the drain electrode 402;

[0081] A second insulating layer 302 is located on the electrode and the active layer 50 and covers the source electrode 401, the active layer 50 and part of the drain electrode 402, and a through hole is formed in the second insulating layer 302;

[0082] A bottom electrode 20 is located on the second insulating layer 302 and is electrically connected to the drain electrode 402 through the through hole.

[0083] The preparation method of the thin film transistor driving structure in the present comparative example comprises the following steps:

[0084] 1. A substrate 10 is provided;

[0085] 2. A gate electrode 403 is prepared on the substrate 10;

[0086] 3. A first insulating layer 301 is prepared on the surface of the substrate 10 and the gate electrode 403, covering the gate electrode 403 and the substrate 10;

[0087] 4. A source electrode 401 and a drain electrode 402 are prepared on the first insulating layer 301;

[0088] 5. An active layer 50 is prepared between the source electrode 401 and the drain electrode 402;

[0089] 6. A second insulating layer 302 is prepared on the surface of the source electrode 401, the drain electrode 402 and the active layer 50, and the second insulating layer 302 is etched to form a through hole penetrating the drain electrode 402;

[0090] 7. A bottom electrode 20 is prepared on the second insulating layer 302 and is electrically connected to the drain electrode 402 through the through hole.

[0091] The active layer 50 in the present comparative example is an organic semiconductor layer, and the bottom electrode 20 is a pixel electrode of a display device. The preparation process of the organic thin film transistor driving structure based on the organic semiconductor has less equipment investment, low energy consumption, simplified process and good adaptability to flexible substrates compared with the traditional inorganic thin film transistor driving structure.

[0092] The organic thin film transistor in the present comparative example adopts a bottom-gate bottom-contact device structure, i.e., the source electrode, the drain electrode and the gate electrode are all below the organic semiconductor layer. Since the organic semiconductor layer is not suitable for photolithography process, in order to improve the integration of the device, the source electrode and the drain electrode need to be prepared in advance, and then the organic semiconductor layer is prepared. After the preparation of the organic semiconductor layer, the process steps of preparing the second insulating layer 302, etching the second insulating layer 302 to form a through hole and preparing a pixel electrode are still needed. Since the organic semiconductor layer is sensitive to these subsequent processing steps, the preparation process of the second insulating layer 302 needs to meet very strict requirements, specifically including the following characteristics:

[0093] 1、Second insulating layer 302 preparation process needs to be adapted to the organic semiconductor layer, can not cause damage to the organic semiconductor layer;

[0094] 2、Second insulating layer 302 needs to ensure high quality, can not cause unnecessary electrode communication, such as the leakage of the bottom electrode 20 and the source electrode 401;

[0095] 3、Second insulating layer 302 thickness can not be too thick, too thick second insulating layer 302 will lead to the difficulty of etching through hole, in the premise of ensuring no leakage, isolation of water and oxygen, need to avoid the damage to the organic semiconductor layer caused by etching process as much as possible.

[0096] It should be understood that in the actual preparation process, the above three points are difficult to achieve at the same time, in order to realize the effective insulation effect, it is inevitable to cause damage to the organic semiconductor layer, resulting in the performance of the device.

[0097] Further, the organic thin film transistor drive structure in the present comparative example needs to be prepared after the preparation of the organic semiconductor layer, in addition to the preparation of the second insulating layer 302 and the bottom electrode 20, in the actual device preparation process, a series of processes about the preparation and connection of the light emitting layer need to be carried out after the preparation of the bottom electrode 20, these post-processing processes will inevitably cause damage to the organic semiconductor layer, resulting in the performance of the device.

[0098] Example 1:

[0099] As shown in Figure 3, the thin film transistor drive structure in the present embodiment is an organic thin film transistor drive structure, which comprises:

[0100] Substrate 10;

[0101] Bottom electrode 20 on the substrate 10;

[0102] Insulating layer on the bottom electrode 20;

[0103] Top electrode, including first electrode on the insulating layer, second electrode penetrating through the insulating layer and electrically connected with the bottom electrode, and third electrode in the insulating layer;

[0104] Active layer 50 on the insulating layer and electrically connected with the first electrode and the second electrode respectively.

[0105] The substrate 10 in the present embodiment is an electronic paper.

[0106] In other embodiments, the substrate 10 can also be an OLED light emitting device, an LED light emitting device, a Mini LED light emitting device, a Micro LED light emitting device, a QLED light emitting device or an LCD light emitting device, etc.

[0107] In particular, the preparation of the thin-film transistor driving structure can be directly completed on the driven device in the actual preparation process.

[0108] The bottom electrode 20 in the embodiment is a pixel electrode in a display device.

[0109] Further, the insulating layer in the embodiment includes a first insulating layer 301 and a second insulating layer 302 which are sequentially stacked on the bottom electrode 20, the first insulating layer 301 being a single-layer insulating layer or a combination of multiple-layer insulating layers, and the second insulating layer 302 being a single-layer insulating layer or a combination of multiple-layer insulating layers.

[0110] Further, the third electrode is located between the first insulating layer 301 and the second insulating layer 302, the first electrode and the second electrode are located on the second insulating layer 302, and the second electrode is electrically connected with the bottom electrode 20 through the first insulating layer 301 and the second insulating layer 302.

[0111] Illustratively, the first electrode is a source electrode 401, the second electrode is a drain electrode 402, and the third electrode is a gate electrode 403 in the embodiment.

[0112] Further, the active layer 50 is located between the first electrode and the second electrode and at least partially covers the top and / or sidewall of the first electrode and the second electrode.

[0113] Illustratively, the active layer 50 is located between the first electrode and the second electrode and covers the sidewall of the first electrode and the second electrode and partially covers the top of the first electrode and the second electrode in the embodiment.

[0114] The active layer 50 in the embodiment is an organic semiconductor layer.

[0115] The preparation method of the thin-film transistor in the embodiment specifically includes the following steps:

[0116] S1, as shown in FIG. 4a, an insulating layer and a top electrode are prepared on the bottom electrode 20, the top electrode including a first electrode located on the insulating layer, a second electrode penetrating through the insulating layer and electrically connected with the bottom electrode 20, and a third electrode located in the insulating layer.

[0117] The bottom electrode 20 in the embodiment is prepared on a substrate 10, the substrate 10 being an electronic paper, and the bottom electrode 20 being a pixel electrode in a display device. The preparation process of the pixel electrode is a conventional preparation process, which is not described herein.

[0118] The step specifically includes:

[0119] The first insulating layer 301 is prepared on the bottom electrode 20;

[0120] The third electrode is prepared on the first insulating layer 301;

[0121] A second insulating layer 302 is prepared on the first insulating layer 301 and the surface of the third electrode, covering the third electrode and the first insulating layer 301;

[0122] A first electrode is prepared on the second insulating layer 302, and a second electrode is prepared to be electrically connected with the bottom electrode 20 through the first insulating layer 301 and the second insulating layer 302.

[0123] Further, the preparation method of the second electrode is as follows:

[0124] After the preparation of the second insulating layer 302 is completed, the first insulating layer 301 and the second insulating layer 302 are etched to form a through hole penetrating to the bottom electrode 20, and a metal electrode is deposited on the through hole and the second insulating layer 302; or,

[0125] After the preparation of the first insulating layer 301 is completed, the first insulating layer 301 is etched to form a first through hole penetrating to the bottom electrode 20, and a first metal electrode is deposited in the first through hole; after the preparation of the second insulating layer 302 is completed, the second insulating layer 302 is etched to form a second through hole penetrating to the first insulating layer 301 and connected with the first through hole, and a second metal electrode connected with the first metal electrode is deposited in the second through hole; finally, a third metal electrode connected with the second metal electrode is deposited on the second insulating layer 302. By the method of step-by-step etching and deposition, the efficiency of the through hole and the reliability of the electrical connection between the bottom electrode and the second electrode can be guaranteed.

[0126] It should be understood that the metal electrode in the embodiment is not limited to the electrode made of metal material, and the electrode made of other conductive materials is also applicable, such as carbon-based electrode or conductive polymer electrode, etc.

[0127] S2, as shown in FIG. 4b, an active layer 50 is prepared on the insulating layer and is electrically connected with the first electrode and the second electrode respectively.

[0128] In the embodiment, the active layer 50 is grown between the first electrode and the second electrode, and the active layer 50 at least partially covers the surface of the first electrode and the second electrode, realizing the bottom contact of the active layer 50 with the first electrode and the second electrode.

[0129] The active layer 50 in the embodiment is an organic semiconductor layer.

[0130] Further, the active layer 50 in the embodiment adopts an organic small-molecule single-crystal semiconductor layer, has higher mobility and better uniformity, and can realize higher refresh frequency and lower standby power consumption.

[0131] Further, according to the actual preparation process, in order to ensure the growth quality of the active layer 50 and the contact effect of the electrode, the electrode needs to be pretreated before the preparation of the active layer 50. The pretreatment process is the prior art, which will not be described here.

[0132] It should be understood that the preparation method of the thin film transistor driving structure in the embodiment is to prepare the bottom electrode 20 in priority to the active layer 50, and the partial difference in the intermediate step is not affected.

[0133] Compared with Comparative Example 2, the bottom electrode 20 in the embodiment is prepared before the active layer 50, and the active layer 50 is prepared at the end, which avoids the influence of the preparation process of the insulating layer, the pixel electrode and the like on the active layer.

[0134] Example 2:

[0135] The organic thin film transistor driving structure and the preparation method in the embodiment are substantially the same as those in Example 1, and the difference is that:

[0136] The substrate 10 in the embodiment is a silicon wafer.

[0137] In other embodiments, the substrate 10 can also be any one or more of a silicon wafer, a glass wafer, a polyimide film, a PET plastic film, a printed circuit board (PCB), a flexible circuit board (FPC), a paper sheet, a textile material substrate, a polyvinyl alcohol (PVA) film, a polydimethylsiloxane (PDMS) film, a polyethylene (PE) film, and a polyurethane (PU) film.

[0138] It should be understood that the material of the substrate 10 in the embodiment includes but is not limited to the above-mentioned example materials, and any other rigid or flexible substrate material that can achieve the same function is also applicable.

[0139] Specifically, after the preparation of the thin film transistor driving structure on these substrates is completed in the actual preparation process, the thin film transistor driving structure is transferred to the driven device for device driving.

[0140] As shown in FIG. 5, a sacrificial layer 70 is provided between the substrate 10 and the bottom electrode 20 in the embodiment.

[0141] Specifically, the sacrificial layer 70 plays a role in releasing the bottom electrode 20 and the structure above the bottom electrode 20, facilitating the release and transfer of the bottom electrode 20 and the structure above the bottom electrode 20 from the substrate 10.

[0142] For example, the second insulating layer 302 in the embodiment is provided with an encapsulation layer 60 covering the first electrode, the second electrode, the active layer 50 and the second insulating layer 302.

[0143] Example 3:

[0144] The structure and preparation method of the thin film transistor driving structure in this embodiment are substantially the same as those in Embodiment 1, except that the active layer 50 is a perovskite layer.

[0145] Embodiment 4:

[0146] The structure and preparation method of the thin film transistor driving structure in this embodiment are substantially the same as those in Embodiment 1, except that the active layer 50 is a carbon nanotube layer.

[0147] Further, in other embodiments, the material of the active layer 50 can also be other new thin film transistor active layer materials that are not suitable for photolithography or are susceptible to subsequent processing.

[0148] Further, the organic thin film transistor driving structure in the application has a modular characteristic.

[0149] As shown in FIG. 6a, the device structure of the organic thin film transistor in the application can be used to detect and study the performance of the organic thin film transistor separately in actual production and preparation.

[0150] As shown in FIGS. 6b and 6c, the organic thin film transistor in the application can be connected to the bottom electrode 20 first, and then connected to the sacrificial layer 70 deposited on the substrate 10 prepared in advance.

[0151] [Corrected according to Rule 26 on 18.09.2024] As shown in FIGS. 6a and 6c, the organic thin film transistor in the application can be directly connected to the driven module formed by the sequentially stacked substrate 10, sacrificial layer 70 and bottom electrode 20 prepared in advance.

[0152] The organic thin film transistor and the driven module in the application can be developed and optimized synchronously.

[0153] As can be seen from the above scheme, the application has the following beneficial effects:

[0154] The active layer in the application is prepared at the end, which greatly avoids the influence of subsequent processing on the active layer, improves the stability of the thin film transistor driving structure, and reduces the integration difficulty of the thin film transistor driving structure.

[0155] The thin film transistor driving structure in the application has a modular characteristic, and is widely used in various application scenarios. The development and optimization of the process route between different modules can be carried out synchronously, which greatly promotes the integration efficiency of the thin film transistor driving structure. At the same time, the preparation process of the thin film transistor driving structure in the application can be compatible with the production line of the thin film transistor driving structure in the prior art.

[0156] It will be obvious to a person skilled in the art that the application is not limited to the details of the foregoing exemplary embodiments and can be implemented in other concrete forms without departing from the spirit or essential characteristics of the application. The embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the application being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. No reference signs in the claims should be considered as limiting the scope of the claims to the identity of the reference signs therein.

[0157] Furthermore, it should be understood that although the description is made on the basis of the embodiments, not every embodiment contains only one independent technical solution, and the description of the specification is only for the sake of clarity, and those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that those skilled in the art can understand.

Claims

1. A thin-film transistor driving structure, characterized in that, The thin-film transistor driving structure comprises: a substrate; a bottom electrode on the substrate; an insulating layer on the bottom electrode; a top electrode comprising a first electrode on the insulating layer, a second electrode penetrating through the insulating layer and electrically connected with the bottom electrode, and a third electrode in the insulating layer; an active layer on the insulating layer and electrically connected with the first electrode and the second electrode respectively.

2. The thin film transistor driving structure according to claim 1, wherein The active layer is between the first electrode and the second electrode and at least partially covers the top and / or sidewall of the first electrode and the second electrode.

3. The thin film transistor driving structure according to claim 1, wherein The insulating layer comprises a first insulating layer and a second insulating layer stacked on the bottom electrode in sequence, the third electrode is between the first insulating layer and the second insulating layer, the first electrode and the second electrode are on the second insulating layer, and the second electrode penetrates through the first insulating layer and the second insulating layer and is electrically connected with the bottom electrode, the first insulating layer is a single-layer insulating layer or a combination of multiple-layer insulating layers, and the second insulating layer is a single-layer insulating layer or a combination of multiple-layer insulating layers.

4. The thin film transistor driving structure according to claim 1, wherein A sacrificial layer is arranged between the substrate and the bottom electrode, and the sacrificial layer is used for releasing or transferring the bottom electrode and the structure above the bottom electrode from the substrate.

5. The thin film transistor driving structure according to claim 1, wherein An encapsulating layer covering the first electrode, the second electrode, the active layer and the insulating layer is arranged on the insulating layer.

6. The thin film transistor drive structure according to claim 1, wherein The bottom electrode is a pixel electrode.

7. The thin film transistor drive structure according to claim 1, wherein The active layer is an organic semiconductor layer, a perovskite layer or a carbon nanotube layer.

8. The thin film transistor drive structure according to claim 1, wherein, The substrate is an electronic paper, an OLED light emitting device, an LED light emitting device, , a Micro LED light emitting device, a QLED light emitting device, or an LCD light emitting device.

9. The thin film transistor drive structure according to claim 1, wherein The substrate is any one or more of a textile material substrate, a silicon wafer, a glass sheet, a paper sheet, a polyvinyl alcohol film, a polydimethylsiloxane film, a polyimide film, a PET plastic film, a polyethylene film, a polyurethane film, a circuit board or a flexible circuit board.

10. A method for fabricating a thin-film transistor driving structure, characterized in that, The preparation method comprises the following steps: S1, preparing an insulating layer and a top electrode on the bottom electrode, the top electrode comprising a first electrode on the insulating layer, a second electrode penetrating through the insulating layer and electrically connected with the bottom electrode, and a third electrode in the insulating layer; S2, preparing an active layer on the insulating layer and electrically connected with the first electrode and the second electrode respectively.

11. The method of claim 10, wherein the method further comprises: The step S1 comprises the following steps: preparing a first insulating layer on the bottom electrode; preparing a third electrode on the first insulating layer; preparing a second insulating layer on the surface of the first insulating layer and the third electrode, the second insulating layer covering the third electrode and the first insulating layer; preparing a first electrode on the second insulating layer and a second electrode penetrating through the first insulating layer and the second insulating layer and electrically connected with the bottom electrode.

12. The method of claim 11, wherein the method further comprises: The preparation method of the second electrode is: after the preparation of the second insulating layer is completed, etching the first insulating layer and the second insulating layer to form a through hole penetrating to the bottom electrode, and depositing a metal electrode on the through hole and the second insulating layer; or after the preparation of the first insulating layer is completed, etching the first insulating layer to form a first through hole penetrating to the bottom electrode and depositing a first metal electrode in the first through hole; after the preparation of the second insulating layer is completed, etching the second insulating layer to form a second through hole penetrating to the first insulating layer and connected with the first through hole, and depositing a second metal electrode connected with the first metal electrode in the second through hole; and finally depositing a third metal electrode connected with the second metal electrode on the second insulating layer.

13. The method of claim 10, wherein the method further comprises: The bottom electrode is prepared on the substrate.

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