Probe

Abstract

A probe (10) includes: a support structure (14) that supports the probe (10); and an electric path structure (20) that constitutes an electric path from a needle tip (11) of the probe (10) to a needle base (12) of the probe (10). The electric path structure (20) includes a resistive part (21) having a higher resistance value than that of the support structure (14). The portion of the electric path structure (20) other than both ends (21T1, 21T2) of the resistive part (21) in the longitudinal direction is electrically insulated from the support structure (14) via insulation parts (22, 23, 24, 25). The electric path structure (20) is embedded in the support structure (14) such that a central axis extending in the longitudinal direction of the resistive part (21) of the electric path structure (20) is aligned with a central axis (C) extending through the probe body in the longitudinal direction.

Description

probe

[0001] The present disclosure relates to probes.

[0002] One method for testing the characteristics of semiconductor devices is to simultaneously test multiple semiconductor devices on a wafer using a probe card. In this testing method, power is supplied to the semiconductor devices from the power probes of the probe card to operate them, and output signals from the semiconductor devices are picked up by the signal probes, and a tester determines whether the output signals are normal.

[0003] When multiple semiconductor devices are tested simultaneously, if one of the semiconductor devices being tested is damaged, an overcurrent will flow into the damaged semiconductor device, causing electrical instability. This electrical instability prevents the other normal semiconductor devices from receiving a predetermined amount of power, and so they will not output the correct signal, even though they are normal, and will be determined to be abnormal.

[0004] To prevent such errors, a protective resistor has been provided in the wiring circuit of the power probe of the probe card that supplies current to the semiconductor device. Furthermore, as the wiring has become denser, it has been proposed to provide the protective resistor inside the power probe instead of in the wiring. As a structure for providing a protective resistor inside the probe, a probe structure in which a resistive layer is formed on the needle tip of the probe so as to interrupt the electrical path has been proposed (see, for example, Patent Document 1).

[0005] JP 2009-150801 A

[0006] However, in the probe shown in Patent Document 1, the resistor made of a metal material has its surface exposed and is biasedly positioned within the probe via an insulating layer made of a resin material, which creates a problem in that distortion occurs within the probe due to the difference in thermal expansion coefficients between the resistor and the insulating layer, causing a deterioration in the positional accuracy of the probe.

[0007] The present disclosure discloses a technique for solving the above-mentioned problems, and aims to provide a probe that has excellent positional accuracy while internally functioning as a protective resistor.

[0008] The probe according to the present disclosure comprises: a support structure that supports the probe; and an electrical circuit structure that forms an electrical path from the tip of the probe to the base of the probe; the electrical circuit structure comprises a resistor portion having a higher resistance value than the support structure; the electrical circuit structure is electrically insulated from the support structure via insulating portions at portions other than both longitudinal ends of the resistor portion; and the electrical circuit structure is embedded in the support structure with the longitudinal central axis of the resistor portion of the electrical circuit structure aligned with the longitudinal central axis of the probe body.

[0009] According to the probe according to the present disclosure, it is possible to provide a probe that has excellent positional accuracy of the probe tip while having a function as a protective resistor inside.

[0010] 1 is a perspective view of a probe according to a first embodiment; FIG. 2 is a schematic front view of a probe according to the first embodiment; FIG. 4A is a front view of a probe in a needle lower layer forming step; FIG. 4B is a cross-sectional view of FIG. 4A; FIG. 5A is a front view of a probe in a first insulating coating forming step; FIG. 5B is a cross-sectional view of FIG. 5A; FIG. 6A is a front view of a probe in a first insulating layer forming step; FIG. 6B is a cross-sectional view of FIG. 6A; FIG. 7A is a front view of a probe in a resistor forming step; FIG. 7B is a cross-sectional view of FIG. 7A; FIG. 8A is a front view of a probe in a second insulating layer forming step; FIG. 8B is a cross-sectional view of FIG. 8A; FIG. 9A is a front view of a probe in an needle upper layer forming step; FIG. 9B is a cross-sectional view of FIG. 9A; FIG. 10A is a front view of a probe in a second insulating coating forming step. 10B is a cross-sectional view taken along line A-A of FIG. 10A. FIG. 11A is a front view of the probe in the needle base portion forming step. FIG. 11B is a cross-sectional view taken along line A-A of FIG. 11A. FIG. 12A is a front view of the probe in the solder portion forming step. FIG. 12B is a cross-sectional view taken along line A-A of FIG. 12A. A cross-sectional view of a main portion of the probe according to embodiment 1. A front schematic view of the probe according to embodiment 2. A partial cross-sectional view showing the structure of the probe shown in FIG. 14 mounted on a probe card. FIG. 16A is a front view of the probe in the needle lower layer portion forming step. FIG. 16B is a cross-sectional view taken along line A-A of FIG. 16A. FIG. 17A is a front view of the probe in the first insulating coating forming step. FIG. 17B is a cross-sectional view taken along line A-A of FIG. 17A. FIG. 18A is a front view of the probe in the first insulating layer forming step. FIG. 18B is a cross-sectional view taken along line A-A of FIG. 18A. FIG. 19A is a front view of the probe in the resistor portion forming step. Fig. 19B is a cross-sectional view taken along line A-A in Fig. 19A. Fig. 20A is a front view of the probe in the second insulating layer forming step. Fig. 20B is a cross-sectional view taken along line A-A in Fig. 20A. Fig. 21A is a front view of the probe in the leg forming step. Fig. 21B is a cross-sectional view taken along line A-A in Fig. 21A. Fig. 22A is a front view of the probe in the sacrificial layer forming step. Fig. 22B is a cross-sectional view taken along line A-A in Fig. 22A. Fig. 23A is a front view of the probe in the second insulating coating forming step. Fig. 23B is a cross-sectional view taken along line A-A in Fig. 23A.Fig. 24A is a front view of the probe in the needle upper layer forming step. Fig. 24B is a cross-sectional view taken along line A-A in Fig. 24A. Fig. 25A is a front view of the probe in the solder part forming step. Fig. 25B is a cross-sectional view taken along line A-A in Fig. 25A. Fig. 26A is a front view of the probe in the separation step. Fig. 26B is a cross-sectional view taken along line A-A in Fig. 26A. A schematic front view of a probe according to embodiment 3.

[0011] The probe card is provided with a power supply probe that supplies power to the semiconductor device to be tested, a signal probe that extracts an output signal resulting from the operation of the semiconductor device, and a ground probe that grounds the electrical circuit of the semiconductor device. The subject of this disclosure is not limited to power supply probes, but is also applicable to probes that require a predetermined value of wiring resistance. The following explanation focuses on power supply probes.

[0012] Embodiment 1. A probe according to embodiment 1 will be described below with reference to the drawings. FIG. 1 is a perspective view of a probe 10. FIG. 2 is a schematic front view of the probe 10. FIG. 3 is a cross-sectional view taken along the line A-A in FIG. 2. As shown in the figure, the probe 10 is composed of a tip portion 11 that contacts an input terminal of a semiconductor device under test, a base portion 12 that is fixed to a probe card and connected to wiring, a middle portion 13 in the center of the probe 10, and an elastic beam portion 1B formed between the tip portion 11 and the middle portion. The tip portion 11, base portion 12, and beam portion 1B are composed of laminated layers of the same conductive metal. In this specification, the term "probe body 10H" refers to the middle portion 13 and base portion 12.

[0013] In the following description, the longitudinal direction of the probe main body 10H shown in Fig. 1 is referred to as the X direction, the side of the needle base 12 in the X direction is referred to as the X- direction (X- side), and the opposite side, i.e., the side of the needle center portion 13, is referred to as the X+ direction (X+ side). The direction perpendicular to the X direction on the paper surface of Fig. 1 is referred to as the Y direction. The Y direction is the width direction of the needle center portion 13. The direction perpendicular to the X direction and Y direction on Fig. 1 is referred to as the Z direction, and the lower side of the paper surface of Fig. 1 in the Z direction is referred to as the Z- direction, and the opposite side is referred to as the Z+ direction. The Z direction is the stacking direction of metal layers and insulating layers during the manufacturing process of the probe 10, with the Z- side being the lower layer and the Z+ side being the upper layer.

[0014] The X-side end of the needle center portion 13 of the probe 10 is divided into a support structure 14 of the probe 10 and an electric circuit structure 20, and as shown in Figure 2, the electric circuit structure 20 is embedded in the support structure 14. The support structure 14 mechanically supports the needle tip portion 11. The electric circuit structure 20 forms an electric circuit between the needle tip portion 11 and the needle base portion 12.

[0015] At the tip 11 of the probe 10 and at the tip 11 side of the middle needle section 13, the support structure and the electric circuit structure are integrated, and at the end on the X-side of the middle needle section 13 of the probe 10, they are separated as described above, with the electric circuit structure 20 embedded in the support structure 14. At the base 12, the support structure and the electric circuit structure are again integrated.

[0016] The electric path of the electric path structure 20 is provided with a resistive film serving as a resistive portion 21. The resistive portion 21 is formed of a metal material having a higher resistivity than the metal material forming the support structure 14 of the probe 10. For example, when the support structure 14 is formed of a nickel (Ni) alloy, a nickel-chromium (NiCr) alloy is used for the resistive portion 21.

[0017] As shown in Figures 2 and 3, the electrical path structure 20 includes a central axis C in the longitudinal direction X of the needle middle portion 13, a conductive resistive portion 21 having a coaxial central axis, a first insulating layer 22 in the lower layer in the Z direction that covers the periphery of the resistive portion 21 except for both ends in the X direction, and a second insulating layer 23 in the upper layer in the Z direction that insulates between the support structure 14 and the resistive portion 21.

[0018] The electrical path structure 20 further includes a first insulating coating 24 connected to the X-side end of the first insulating layer 22 and covering the X-side end face of the needle lower layer 10A (support structure 14) below the first insulating layer 22, and a second insulating coating 25 connected to the second insulating layer 23 and covering the X-side end face of the needle upper layer 10B. As a result, only the resistor 21 serves as a current path in the X-direction between the needle middle section 13 and the needle base section 12. Therefore, the first insulating layer 22, the second insulating layer 23, the first insulating coating 24, and the second insulating coating 25 of the electrical path structure 20, excluding the resistor 21, constitute an insulating section 20Z that electrically insulates the support structure 14 from the resistor 21.

[0019] It is important that the support structure 14 has sufficient strength to support the needle tip 11 when the power supply probe 10 contacts the electrode of the semiconductor device with the same needle pressure as the signal probe.

[0020] Furthermore, the electrical circuit structure 20 is provided with a resistance portion 21 having a small cross-sectional area and a predetermined length so that the resistance value set by the cross-sectional area and length of the resistance portion 21 is, for example, 200 Ω to 300 Ω, and it is important that no electrical paths are formed in the X direction around the electrical circuit structure 20 other than this resistance portion 21.

[0021] Thus, in order to obtain a predetermined resistance value, the probe 10 according to the first embodiment needs to have a small cross-sectional area and a long overall length for the electric path through which the current flows, i.e., the resistor portion 21. For this reason, the end portion on the X-side of the needle center portion 13 is divided into a support structure 14 that provides mechanical strength and an electric path structure 20 that provides the function of supplying current, and the electric path structure 20 is provided with a resistor portion 21 that has a predetermined resistance value and a higher resistance value than the support structure 14.

[0022] Next, the manufacturing process of the probe 10 will be described. Fig. 4A is a front view of the probe 10 in the step of forming the needle lower layer portion. Fig. 4B is a cross-sectional view taken along line A-A in Fig. 4A. It shows the same cross section as Fig. 3. First, a sacrificial layer 2 (e.g., a Cu plating layer) is formed on the substrate 1, and then a needle lower layer portion 10A made of a conductive metal is formed thereon by metal plating.

[0023] FIG. 5A is a front view of the probe 10 in the first insulating coating formation process. FIG. 5B is a cross-sectional view taken along the line A-A in FIG. 5A. The cross section is the same as that shown in FIG. 3. Next, an electrically insulating first insulating coating 24 is formed by sputtering so as to continuously cover the X-side end surface 10ATS1 of the X-side end 10AT of the needle lower layer 10A formed in the needle lower layer formation process and a predetermined area of ​​the upper surface 10ATU on the Z+ side. The Y-direction width of the first insulating coating 24 is the same as the Y-direction width of the needle lower layer 10A. The first insulating coating 24 is, for example, an insulating sputtered thin film such as silicon nitride (SiN) or diamond-like carbon (DLC).

[0024] FIG. 6A is a front view of the probe 10 in the first insulating layer formation process. FIG. 6B is a cross-sectional view taken along the line A-A in FIG. 6A. The cross section shows the same portion as FIG. 3. Next, a first insulating layer 22 is formed on the needle lower layer 10A, connected to the X+ end 24T2 of the first insulating coating 24 formed in the first insulating coating formation process. As shown in FIG. 6A, the Y-direction width 22Y of the first insulating layer 22 is smaller than the Y-direction width 10AY of the needle lower layer 10A. Therefore, when viewed from above, the lower needle layer 10A is visible on both sides of the first insulating layer 22 in the Y direction, and the X-side end 22T1 of the first insulating layer 22 is connected to the first insulating coating 24. The first insulating layer 22 is formed of a photosensitive insulating film, for example, using polyimide. The first insulating layer 22 is electrically insulating.

[0025] FIG. 7A is a front view of the probe 10 in the resistor portion forming process. FIG. 7B is a cross-sectional view taken along the line A-A in FIG. 7A. The cross section shows the same portion as FIG. 3. Next, the resistor portion 21 is formed. The resistor portion 21 is formed so that its central portion 21C in the X direction overlaps the first insulating layer 22 formed in the first insulating layer forming process, its end portion 21T2 (one end) on the X+ side overlaps the needle lower layer portion 10A beyond the first insulating layer 22, and its end portion 21T1 (the other end) on the X- side overlaps the first insulating coating 24 beyond the first insulating layer 22. The width 21Y of the resistor portion 21 in the Y direction is smaller than the width 22Y of the first insulating layer 22 in the Y direction. The resistor portion 21 is formed, for example, by sputtering. In this manner, the end portion 21T2 on the X+ side of the resistor portion 21 is electrically connected to the support structure 14 that constitutes the needle center portion 13.

[0026] FIG. 8A is a front view of the probe 10 in the second insulating layer forming step. FIG. 8B is a cross-sectional view taken along the line A-A in FIG. 8A. The cross section shows the same portion as FIG. 3. Next, in the front view shown in FIG. 8A, a second insulating layer 23 is formed in the same area as the first insulating layer 22 formed in the first insulating layer forming step described above, so as to cover the periphery of the resistor portion 21 except for the ends 21T1 and 21T2. The width 23Y of the second insulating layer 23 in the Y direction is the same as the width 22Y of the first insulating layer 22 in the Y direction. By forming the second insulating layer 23 in this area, the periphery of the resistor portion 21 is covered by the first insulating layer 22 and the second insulating layer 23, except for the end 21T1 on the X-side and the end 21T2 on the X+ side. The second insulating layer 23 is formed of the same electrically insulating photosensitive insulating film as the first insulating layer 22.

[0027] FIG. 9A is a front view of the probe 10 in the needle upper layer formation process. FIG. 9B is a cross-sectional view taken along the line A-A in FIG. 9A. The cross section shows the same portion as FIG. 3. Next, the needle upper layer 10B of the probe 10 is formed. The needle upper layer 10B is formed on the X+ side of the X-side end 23T1 of the second insulating layer 23, covering the first insulating layer 22, resistor portion 21, and second insulating layer 23 that have been stacked up to this point, so as to have the same height in the Z+ direction as the needle tip portion 11. The material of the needle upper layer 10B is the same as that of the needle lower layer 10A and is formed by metal plating. The electrical circuit structure 20 is embedded in the needle middle portion 13 so that the central axis C extending in the longitudinal direction X through the probe main body 10H is aligned with the central axis C extending in the longitudinal direction X of the resistor portion 21 of the electrical circuit structure 20. As shown in Figures 9A and 9B, when the needle upper layer 10B is formed, parts of the first insulating coating 24, the first insulating layer 22, the resistor 21, and the second insulating layer 23 are still exposed on the X-side of the X-side end 10BT1 of the needle upper layer 10B.

[0028] FIG. 10A is a front view of the probe 10 in the second insulating coating formation process. FIG. 10B is a cross-sectional view taken along the line A-A in FIG. 10A. The cross section is the same as that shown in FIG. 3. Next, the second insulating coating 25 of the electrical path structure 20 is formed. The second insulating coating 25 is formed to cover the X-side end surface 10BTS of the upper needle layer 10B shown in FIGS. 9A and 9B and the two exposed surfaces 10AR exposed on the upper layer side of the lower needle layer 10A. The second insulating coating 25 is formed by sputtering. The material of the second insulating coating 25 is the same as that of the first insulating coating 24 and is electrically insulating. The electrical path structure 20 is completed after the second insulating coating formation process. In this state, only the X+ side end 21T2 of the resistor portion 21 of the electrical path structure 20 is electrically conductive with the lower needle layer 10A and the upper needle layer 10B.

[0029] FIG. 11A is a front view of the probe 10 in the needle base formation process. FIG. 11B is a cross-sectional view taken along the line A-A in FIG. 11A. The cross-section is the same as that shown in FIG. 3. Next, the needle base 12 is formed as a plated layer on the X-side of the electrical path structure 20, which is embedded between the needle lower layer 10A and the needle upper layer 10B and has a portion exposed on the X-side. The needle base 12 is made of the same metal layer as the support structure 14 (the needle lower layer 10A and the needle upper layer 10B). As a result, the X-side end 21T1 (the other end) of the resistor 21 of the electrical path structure 20 is electrically connected to the needle base 12.

[0030] Figure 12A is a front view of the probe 10 in the solder part formation process. Figure 12B is a cross-sectional view taken along line A-A in Figure 12A. It shows the same cross section as in Figure 3. Next, a solder part 10C is formed on the end surface 12S1 on the X-side of the probe base 12. Next, the sacrificial layer 2 is melted, thereby completing the probe 10 shown in Figure 3, which has been separated from the substrate 1.

[0031] 13 is a cross-sectional view of a main portion of the probe 10. As shown in FIG. 13 , if the thickness of the needle lower layer 10A in the Z direction (stacking direction) is L1, the thickness of the needle upper layer 10B in the stacking direction is L2, the thickness of the first insulating layer 22 and the second insulating layer 23 in the Z direction is L3, and the thickness of the central portion 21C of the resistor 21 in the stacking direction is L4, then by setting L2 = L1 + 2 × L3 + L4, the resistor 21 can be positioned at the center of the cross section of the needle middle portion 13. This makes it possible to make the thermal expansion coefficient of the needle middle portion 13, in which the electrical path structure 20 is embedded, uniform in both the Y direction and the Z direction, thereby preventing deterioration in the positional accuracy of the needle tip 11 of the probe 10 due to heat generation and providing a probe 10 with excellent positional accuracy.

[0032] The probe according to the first embodiment comprises: a support structure that supports the probe; and an electric circuit structure that forms an electric path from the tip of the probe to the base of the probe; the electric circuit structure comprises a resistor portion having a higher resistance value than the support structure; the electric circuit structure is electrically insulated from the support structure via an insulating portion at a portion other than both longitudinal ends of the resistor portion; and the electric circuit structure is embedded in the support structure with the central axis extending longitudinally through the probe body aligned with the central axis extending longitudinally of the resistor portion of the electric circuit structure, thereby providing a probe that has excellent positional accuracy of the needle tip while internally functioning as a protective resistor.

[0033] Furthermore, the probe according to embodiment 1 is characterized in that the probe body comprises a needle middle section on the needle tip side and the needle base section, the electrical circuit structure is arranged in the needle middle section, one end of the resistance section of the electrical circuit structure is connected to the support structure in the needle middle section, and the other end of the resistance section of the electrical circuit structure is electrically connected to the support structure that constitutes the needle base section, and therefore by providing a needle base section consisting only of a support structure, the rigidity of the probe body can be made uniform, and a probe with excellent positional accuracy of the needle tip section can be provided.

[0034] Furthermore, in the probe according to embodiment 1, the insulating portion is characterized by comprising an insulating layer that covers the periphery of the resistor portion except for both longitudinal ends thereof to provide electrical insulation from the support structure, and an insulating coating that is connected to the insulating layer and provides electrical insulation between the needle center portion and the needle base portion. Therefore, the support structure, resistor portion, and insulating portion can be formed using MEMS (Micro Electro Mechanical Systems) technology.

[0035] Embodiment 2. A probe according to embodiment 2 will be described below with reference to the drawings. Note that in the following drawings, reference numerals with the same last two digits indicate the same or equivalent parts. FIG. 14 is a schematic front view of a probe 210 according to embodiment 2. In the probe 10 according to embodiment 1, an electric circuit structure 20 is embedded in the X-side end of the needle center portion 13 of the probe 10, and support structures 14 are evenly arranged around the electric circuit structure 20, thereby making the thermal expansion coefficient of the relevant portion uniform and improving the positional accuracy of the needle tip portion 11 of the probe 10.

[0036] Furthermore, in the first embodiment, the probe base 12 on the X-side of the portion where the electric path structure 20 is embedded again functions as a support structure and as an electric path. The probe 210 according to the second embodiment differs from the probe 10 of the first embodiment in that the electric path structure 220 is embedded in the probe base 212, and the resistor portion 221, which serves as an electric path formed in the center thereof, is connected only to the leg portion 10D that physically branches off from the probe base 212. As in the first embodiment, the electric path structure 220 is arranged so that the thermal conductivity is uniform within the probe base 212.

[0037] Fig. 15 is a partial cross-sectional view showing a structure in which the probe 210 shown in Fig. 14 is mounted on the probe card 100. The probe shown on the right side of Fig. 15 is the power supply probe 210 according to this embodiment. The signal probe 10S shown on the left side of Fig. 15 is a signal probe.

[0038] As shown in the figure, the leg 10D connected to the electrical path structure 220 of the power supply probe 210 is fixed to the power supply electrode 102P provided on the space transformer 101 of the probe card 100 by a solder portion 10C2.

[0039] The needle base 212 of the probe 210 is fixed to the floating electrode 102F of the probe card 100 by a solder part 10C1. The floating electrode 102F is in an electrically floating state and is not connected to anything. In other words, it has an electrically insulated structure.

[0040] The probe base 12S of the signal probe 10S is fixed by a solder part 10CS to a signal electrode 102S provided on a space transformer 101 of the probe card 100. Here, the conditions of the support structure 14 and the electrical circuit structure 220 of the power supply probe 210 are as follows:

[0041] The support structure 14 must have sufficient strength to support the probe tip 11 when the power supply probe 210 contacts the electrode of the semiconductor device with the same needle pressure as the signal probe 10S.

[0042] As in the first embodiment, the electrical path structure 220 has a small cross-sectional area and a predetermined length so that the resistance value, which is set by the cross-sectional area and length of the resistor portion, is, for example, 200 Ω to 300 Ω, and no electrical path is formed other than in this resistor portion.

[0043] Next, the manufacturing process of the probe 210 will be described. Fig. 16A is a front view of the probe 210 in the needle lower layer formation process. Fig. 16B is a cross-sectional view taken along the line A-A in Fig. 16A. First, a sacrificial layer 2 (e.g., a Cu plating layer) is formed on a substrate 1, and a needle lower layer 10A made of a conductive metal is formed thereon by metal plating.

[0044] Figure 17A is a front view of the probe 210 in the first insulating coating formation process. Figure 17B is a cross-sectional view taken along the line A-A in Figure 17A. Next, an electrically insulating first insulating coating 224 is formed by sputtering so as to cover a predetermined area of ​​the upper surface 10ATU of the end 10AT on the X-side of the needle lower layer 10A formed in the needle lower layer formation process. The width 224AY in the Y direction of the first insulating coating 224 is the same as the width 10AY in the Y direction of the needle lower layer 10A.

[0045] FIG. 18A is a front view of the probe 210 in the first insulating layer formation process. FIG. 18B is a cross-sectional view taken along the line A-A in FIG. 18A. Next, a first insulating layer 222 having a rectangular upper surface is formed on the first insulating coating 224, starting from the X+ side of the X-side end 224T2 of the first insulating coating 224 formed in the first insulating coating formation process and extending toward the X+ side. The X+ direction range in which the first insulating layer 222 is formed is on the X+ side of the X+ side end 224T1 of the first insulating coating 224. In other words, of the total length of the first insulating layer 222 in the X direction, approximately the X+ side half contacts the upper surface of the needle lower layer 10A, and the X- side half overlaps the first insulating coating 224.

[0046] As shown in Figure 18A, the Y-direction width 222Y of the first insulating layer 222 is smaller than the Y-direction width 10AY of the needle lower layer 10A. Therefore, when viewed from above, the lower needle layer 10A of the underlying layer is visible on both sides of the X+ side half of the first insulating layer 222 in the Y direction. The first insulating layer 222 is formed, for example, from a photosensitive insulating film. The first insulating layer 222 is electrically insulating.

[0047] FIG. 19A is a front view of the probe 210 in the resistor portion forming process. FIG. 19B is a cross-sectional view taken along the line A-A in FIG. 19A. Next, the resistor portion 221 is formed. The resistor portion 221 is formed so that its central portion 221C in the X direction overlaps the first insulating layer 222 formed in the first insulating layer forming process, its end portion 221T2 (one end) on the X+ side overlaps the needle lower layer portion 10A beyond the first insulating layer 222, and its end portion 221T1 (the other end) on the X- side overlaps the first insulating coating 224 beyond the first insulating layer 222. The width 221Y of the resistor portion 221 in the Y direction is smaller than the width 222Y of the first insulating layer 222 in the Y direction. The resistor portion 221 is formed, for example, by sputtering.

[0048] FIG. 20A is a front view of the probe 210 in the second insulating layer formation process. FIG. 20B is a cross-sectional view taken along the line A-A in FIG. 20A . Next, in the front view shown in FIG. 20A , a second insulating layer 223 is formed in the same area as the first insulating layer 222 formed in the first insulating layer formation process described above, covering the periphery of the resistor section 221 except for the X-side end 221T1 and the X+ side end 221T2. The Y-direction width 223Y of the second insulating layer 223 is the same as the Y-direction width 222Y of the first insulating layer 222. By forming the second insulating layer 223 in this area, the periphery of the resistor section 221 is covered by the first insulating layer 222 and the second insulating layer 223, except for the X-side end 221T1 and the X+ side end 221T2. The second insulating layer 223 is formed of a photosensitive insulating film having electrical insulation properties, similar to the first insulating layer 222.

[0049] Figure 21A is a front view of the probe 210 in the leg formation process. Figure 21B is a cross-sectional view taken along the line A-A in Figure 21A. Next, a leg 10D is formed, which is connected to surround the X-side end 221T1 of the resistor 221, protrudes in the Y direction outside the surface of the needle lower layer 10A, and then extends in the X-direction via a gap with the needle base 212. The leg 10D is formed from the upper surface of the first insulating coating 224 and is formed at the same height in the Z direction as the second insulating layer 223. The leg 10D is formed from a material having the same conductivity as the needle lower layer 10A.

[0050] Figure 22A is a front view of the probe 210 in the sacrificial layer formation process. Figure 22B is a cross-sectional view taken along the line A-A in Figure 22A. Next, the X+ side is connected to the leg 10D, and the X- side forms a sacrificial layer 2G (e.g., a Cu-plated layer) that overlaps the first insulating coating 224. The Y-direction width 2GY of the sacrificial layer 2G is the same as the Y-direction width 10AY of the needle lower layer 10A. The Z-direction height of the sacrificial layer 2G is the same as the leg 10D and the second insulating layer 223.

[0051] FIG. 23A is a front view of the probe 210 in the second insulating coating formation process. FIG. 23B is a cross-sectional view taken along the line A-A in FIG. 23A. Next, the second insulating coating 225 of the electrical path structure 220 is formed. The second insulating coating 225 is formed over the same area as the first insulating coating 224 shown in FIG. 17. The second insulating coating 225 is formed to cover approximately half of the X-side of the second insulating layer 223, the exposed portion of the leg portion 10D, and the sacrificial layer 2G. The second insulating coating 225 is formed by sputtering. The material of the second insulating coating 225 is the same as that of the first insulating coating 224 and is electrically insulating. The electrical path structure 220 is completed after the second insulating coating formation process. In this state, only the resistor portion 221 of the electrical path structure 220 is electrically conductive with the needle lower layer portion 10A of the needle center portion 13 and the leg portion 10D.

[0052] FIG. 24A is a front view of the probe 210 in the needle upper layer formation process. FIG. 24B is a cross-sectional view taken along the line A-A in FIG. 24A. Next, the needle upper layer 10B of the probe 210 is formed. The needle upper layer 10B is formed in the same area as the needle lower layer 10A and is formed to cover the electrical path structure 220. The thickness of the needle upper layer 10B in the Z direction is set so that the central axis of the central portion 221C of the resistor 221 is positioned at the center of the probe 210 in the Z and Y directions, as in the first embodiment. The needle upper layer 10B is formed so that it has the same height in the Z+ direction as the needle tip 11. The needle upper layer 10B is made of a material having the same conductivity as the needle lower layer 10A.

[0053] When the needle upper layer 10B is formed, the electrical path structure 220 is embedded in the needle base 212 so that the central axis C extending in the longitudinal direction of the central portion 221C of the resistance portion 221 of the electrical path structure 220 is aligned with the central axis C extending in the longitudinal direction X through the probe body 10H. Then, in the needle base 212, the support structure 14, which is responsible only for mechanical strength, and the electrical path structure 220, which is responsible only for the function as an electrical path, are electrically separated. The resistance portion 221 of the electrical path structure 220 is electrically connected only to the support structure 14 that constitutes the needle middle portion 13 and to the leg portion 10D that protrudes outward from the needle base 212. In this way, the insulating portion 220Z of the electrical circuit structure 220 is composed of a first insulating layer 222 and a second insulating layer 223 that cover the periphery of the resistance portion 221 except for both ends in the longitudinal direction X, thereby providing electrical insulation between the resistance portion 221 and the support structure 14, and a first insulating coating 224 and a second insulating coating 225 that provide electrical insulation between the end of the resistance portion 221 on the longitudinal direction X- side (opposite the tip end) and the leg 10D connected to the end of the resistance portion 221 on the longitudinal direction X- side, and between the support structure 14 and the leg 10D.

[0054] Fig. 25A is a front view of probe 210 in the solder part formation step. Fig. 25B is a cross-sectional view taken along line AA in Fig. 25A. Next, solder parts 10C are formed on end face 12S1 on the X-side of probe base 212 and on the tips of leg parts 10D.

[0055] Fig. 26A is a front view of the probe 210 in the separation process. Fig. 26B is a cross-sectional view taken along line AA in Fig. 26A. Next, the sacrificial layers 2 and 2G are dissolved, thereby completing the probe 210 separated from the substrate 1.

[0056] According to the probe 210 of embodiment 2, the probe body consists of a needle middle portion on the needle tip side and the needle base portion, the electrical circuit structure is arranged in the needle base portion, one end of the resistance portion of the electrical circuit structure is electrically connected to the support structure that constitutes the needle middle portion, and the other end of the resistance portion of the electrical circuit structure is electrically connected only to the leg portion that protrudes outward from the needle base portion.Therefore, a space K can be provided between the leg portion 10D that is connected to the electrical circuit structure 220 that protrudes outward from the needle base portion 212 and the needle base portion 212, thereby facilitating cooling of the heat-generating leg portion 10D.

[0057] Furthermore, according to the probe 210 of the second embodiment, the insulating portion is characterized by comprising an insulating layer that covers the periphery of the resistor portion except for both longitudinal ends thereof to electrically insulate it from the support structure, and an insulating coating that electrically insulates the support structure from the end of the resistor portion opposite the longitudinal tip end and the leg portion connected to the end of the resistor portion opposite the longitudinal tip end, therefore the support structure, resistor portion and insulating portion can be formed by MEMS technology.

[0058] Embodiment 3. A probe according to embodiment 3 will now be described with reference to the drawings. Fig. 27 is a schematic front view of a probe 310 according to embodiment 3. The only difference between probe 310 and probe 210 described in embodiment 2 is that the protruding direction of leg 310D is opposite.

[0059] That is, the probe 310 of this third embodiment is a cantilever probe, and the orientation of the leg portion 310D provided on the probe 310 is aligned with the orientation of the beam portion 1B of the cantilever probe 310. In the case of the cantilever probe 310, the needle tip portion 11 extends in a predetermined direction from the needle center portion 13 by the beam portion 1B.

[0060] According to the probe of embodiment 3, by making the direction in which the leg portion 310D protrudes the same as the direction in which the needle tip portion 11 of the probe 310 protrudes from the needle middle portion 13, it is possible to reduce the area occupied by the probe 310 placed on the probe card 100.

[0061] In the above embodiments, the case where a resistor is added to the power supply probes 10, 210, and 310 has been described, but it is also necessary to provide a resistor of a predetermined resistance value to the signal probe that supplies a test signal from the tester to the semiconductor device. In this case, the resistance value is large, for example, 200 Ω to 300 Ω, and the resistor can be added using the configuration described in each embodiment.

[0062] Although various exemplary embodiments and examples are described in this disclosure, the various features, aspects, and functions described in one or more embodiments are not limited to the application of a particular embodiment, but may be applied to the embodiments alone or in various combinations. Therefore, countless variations not illustrated are anticipated within the scope of the technology disclosed in this specification. For example, this includes cases where at least one component is modified, added, or omitted, or where at least one component is extracted and combined with components of another embodiment.

[0063] 100 probe card, 101 space transformer, 102F floating electrode, 102P power supply electrode, 102S signal electrode, 10, 210, 310 probe, 10S signal probe, 1 substrate, 2, 2G sacrificial layer, 1B beam portion, 11 needle tip portion, 10D, 310D leg portion, 10H probe body, 10A needle lower layer portion, 10AR exposed surface, 10AT end portion, 10ATS1 end surface, 10ATU upper surface, 10B needle upper layer portion, 10BT1 end portion, 10BTS end surface, 10C, 10C1, 10C2, 10CS solder portion, 12, 12S, 212 needle base portion, 12S1 end surface, 13 needle middle portion, 14 support structure, 20, 220 Electrical circuit structure, 20Z, 220Z insulating portion, 21, 221 resistive portion, 21C, 221C central portion, 21T1, 21T2, 221T1, 221T2 end portion, 22, 222 first insulating layer, 22T1 end portion, 23, 223 second insulating layer, 23T1 end portion, 24, 224 first insulating coating, 24T2, 224T1, 224T2 end portion, 25, 225 second insulating coating, 21Y, 221Y, 10AY, 22Y, 222Y, 23Y, 223Y, 224AY, 2GY width, C central axis, K space portion, X longitudinal direction.

Claims

1. A probe comprising: a support structure that supports a probe; and an electric circuit structure that forms an electric path from the tip of the probe to the base of the probe, wherein the electric circuit structure has a resistor portion having a higher resistance value than the support structure, the electric circuit structure is electrically insulated from the support structure via an insulating portion at a portion other than both longitudinal ends of the resistor portion, and the electric circuit structure is embedded in the support structure with the longitudinal central axis of the resistor portion of the electric circuit structure aligned with the longitudinal central axis of the probe body.

2. The probe described in claim 1, characterized in that the probe body consists of a needle center portion on the needle tip side and the needle base portion, the electrical circuit structure is arranged in the needle center portion, one end of the resistance portion of the electrical circuit structure is electrically connected to the support structure of the needle center portion, and the other end of the resistance portion of the electrical circuit structure is electrically connected to the support structure that constitutes the needle base portion.

3. The probe described in claim 2, characterized in that the insulating section comprises an insulating layer that covers the periphery of the resistor section except for both longitudinal ends to provide electrical insulation between the resistor section and the support structure, and an insulating coating that is connected to the insulating layer and provides electrical insulation between the needle center section and the needle base section.

4. The probe described in claim 1, characterized in that the probe body consists of a needle center portion on the needle tip side and the needle base portion, the electrical circuit structure is arranged in the needle base portion, one end of the resistance portion of the electrical circuit structure is electrically connected to the support structure that constitutes the needle center portion, and the other end of the resistance portion of the electrical circuit structure is electrically connected only to the leg portion that protrudes outward from the needle base portion.

5. The probe described in claim 4, characterized in that the insulating section comprises an insulating layer that covers the periphery of the resistor section except for both longitudinal ends thereof to provide electrical insulation between the resistor section and the support structure, and an insulating coating that provides electrical insulation between the end of the resistor section opposite the longitudinal tip end and the leg section connected to the end of the resistor section opposite the longitudinal tip end and the support structure.

6. A probe according to claim 4 or 5, characterized in that the protruding direction of the leg portion is the same as the protruding direction of the needle tip portion of the probe from the probe body.

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