Substrate processing device, substrate processing method, production method for semiconductor device, and program

Abstract

A substrate processing device having: a support unit that comprises a substrate support surface which supports a substrate and a non-substrate support surface which is a different surface than the substrate support surface and is provided on the same side as the substrate support surface; a first supply unit that supplies, to the substrate, a fluid which becomes a fluid film atop the substrate; a state control unit that is capable of controlling the state of the film atop the non-substrate support surface and the state of fluidity of the film atop the substrate; and a control unit that is configured so as to be capable of controlling at least the support unit, the first supply unit, and the state control unit.

Description

Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method and program

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, a method for manufacturing a semiconductor device, and a program.

[0002] 2. Description of the Related Art One step in the manufacturing process of a semiconductor device is to supply a fluid onto a substrate to form a film (see, for example, Patent Document 1).

[0003] International Publication No. 2021 / 171466

[0004] The present disclosure provides a technique for suppressing fluidic infiltration of a film between a substrate and a substrate support surface when a fluid is supplied onto a substrate to form a film.

[0005] According to one aspect of the present disclosure, there is provided a technology having: a support unit including a substrate support surface that supports a substrate, and a non-substrate support surface that is provided on the same side as the substrate support surface and is a surface different from the substrate support surface; a first supply unit that supplies the substrate with a fluid that forms a fluid film on the substrate; a state control unit that is capable of controlling the film state on the non-substrate support surface and the fluid state of the film on the substrate; and a control unit that is configured to be able to control at least the support unit, the first supply unit, and the state control unit.

[0006] According to the present disclosure, when a fluid is supplied onto a substrate to form a film, it is possible to suppress the fluid film from penetrating between the substrate and the substrate support surface.

[0007] Fig. 1 is a schematic configuration diagram of a substrate processing apparatus 100 that is preferably used in one embodiment of the present disclosure. Fig. 2 is a schematic configuration diagram of a controller 310 of the substrate processing apparatus 100 that is preferably used in one embodiment of the present disclosure, and is a block diagram showing a control system of the controller 310. Fig. 3(a) is a diagram showing a schematic configuration of a support table 211 provided in a support unit 210 of the substrate processing apparatus 100 that is preferably used in one embodiment of the present disclosure. Fig. 3(b) is a cross-sectional view of the internal structure of the support unit 210 taken along line A-A in Fig. 3(a).

[0008] <One Aspect of the Present Disclosure> Hereinafter, one aspect of the present disclosure will be described with reference to the drawings. Note that all drawings used in the following description are schematic, and the dimensional relationships, ratios, etc. of elements shown in the drawings do not necessarily match those of reality. Furthermore, the dimensional relationships, ratios, etc. of elements between multiple drawings do not necessarily match.

[0009] (1) Structure of the Substrate Processing Apparatus As shown in FIG. 1, the substrate processing apparatus 100 is an apparatus for forming a thin film on a wafer 200 as a substrate, and is configured as a single-wafer processing apparatus.

[0010] (Processing Vessel) The substrate processing apparatus 100 includes a processing vessel 202. The processing vessel 202 is configured as, for example, a flat, sealed vessel. The processing vessel 202 is configured from, for example, a metal material such as aluminum (Al) or stainless steel (SUS). A processing chamber 201 for processing wafers 200 is formed within the processing vessel 202.

[0011] A gate valve 205 and a substrate loading / unloading port 206 adjacent to the gate valve 205 are provided on the side of the processing vessel 202. By opening the gate valve 205, it becomes possible to transfer the wafer 200 between a transfer chamber (not shown) and the processing chamber 201 via the substrate loading / unloading port 206.

[0012] (Supporting Part) A supporting part (susceptor) 210 that supports the wafer 200 is provided inside the processing chamber 201. The supporting part 210 mainly includes a support table 211 having, on its surface, a substrate supporting surface 211a that supports (places) the wafer 200, and a non-substrate supporting surface 211b (described later).

[0013] A plurality of lift pins 207 are provided at the bottom of the processing chamber 201 below the support portion 210. A plurality of through holes 214 through which the lift pins 207 pass are provided in the support table 211 at positions corresponding to the lift pins 207, respectively.

[0014] The support table 211 is supported by a shaft 217. The shaft 217 penetrates the bottom of the processing vessel 202 and is connected to an elevation / rotation mechanism (not shown) outside the processing vessel 202. By operating the elevation / rotation mechanism, the support table 211 can be elevated and rotated via the shaft 217. An opening provided in the processing vessel 202 to allow the shaft 217 to penetrate therethrough is surrounded by a bellows 219, and the inside of the processing vessel 202 is kept airtight.

[0015] When transferring (loading / unloading) the wafer 200, the support table 211 descends to a predetermined position (hereinafter also referred to as a transfer position) where the substrate support surface 211a is lower than the height corresponding to the substrate loading / unloading port 206. At the transfer position, the upper ends of the lift pins 207 protrude upward from the substrate support surface 211a, allowing the lift pins 207 to support the wafer 200 from below. When processing the wafer 200, the support table 211 ascends to a predetermined position (hereinafter also referred to as a processing position) that is higher than the transfer position. At the processing position, the upper ends of the lift pins 207 are recessed below the substrate support surface 211a, allowing the substrate support surface 211a to support the wafer 200 from below.

[0016] (heating part)

[0017] A heater 213a serving as a first heating unit is incorporated below the substrate support surface 211a of the support table 211. The heater 213a is used to heat the wafer 200 in a film formation process, which will be described later.

[0018] A lamp house 460 is provided on the ceiling of the processing chamber 202, on the front surface side of the wafer 200. A plurality of lamps 401 serving as a fourth heating unit are provided in the lamp house 460. The lamps 401 are used to heat the wafer 200 in a post-treatment process, which will be described later.

[0019] (Shower Head) A shower head 300a serving as a gas dispersion mechanism is provided in an area facing the substrate support surface 211a in the upper part of the processing vessel 202. An inlet hole 241 for introducing a fluid into the shower head 300a is provided in the upper part of the processing vessel 202. A common supply pipe 240, which will be described later, is connected to the inlet hole 241.

[0020] The shower head 300a includes a dispersion plate 254 for dispersing the fluid. The dispersion plate 254 is disposed above the substrate support surface 211a so as to face the substrate support surface 211a. The space upstream (above) of the dispersion plate 254 is the buffer chamber 252, and the space downstream (below) of the dispersion plate 254 is the processing chamber 201. The dispersion plate 254 has a plurality of through holes 254a. The buffer chamber 252a communicates with the processing chamber 201 via the plurality of through holes 254a provided in the dispersion plate 254.

[0021] (First Supply Section) As described above, the common supply pipe 240 is connected to the introduction hole 241. The common supply pipe 240 is connected to supply pipes 251, 261, 271, and 281 to which predetermined fluids are supplied.

[0022] The supply pipes 251, 261, 271, 281 are respectively provided with mass flow controllers (MFCs) 252, 262, 272, 282 which are flow rate control devices (flow rate control parts) and valves 253, 263, 273, 283 which are on-off valves, in this order from the upstream side of the fluid flow.

[0023] A raw material is supplied from the supply pipe 251 into the processing chamber 201 via the MFC 252, the valve 253, the common supply pipe 240, and the shower head 300a.

[0024] A reactant is supplied from the supply pipe 261 into the processing chamber 201 via the MFC 262, the valve 263, the common supply pipe 240, and the shower head 300a.

[0025] The modifying agent is supplied from the supply pipe 271 into the processing chamber 201 via the MFC 272, the valve 273c, the common supply pipe 240, and the shower head 300a.

[0026] An inert gas is supplied from the supply pipe 281 through the MFC 282, the valve 283, the common supply pipe 240, and the shower head 300a into the processing chamber 201. The inert gas supplied from the supply pipe 281 acts as a purge gas, a carrier gas, a dilution gas, etc.

[0027] A raw material supply system is mainly constituted by the supply pipe 251, the MFC 252, and the valve 253. A reactant supply system is mainly constituted by the supply pipe 261, the MFC 262, and the valve 263. A modifying agent supply system is mainly constituted by the supply pipe 271, the MFC 272, and the valve 273. A first inert gas supply system is mainly constituted by the supply pipe 281, the MFC 282, and the valve 283.

[0028] The raw material supply system and the reactant supply system constitute a first supply unit. At least one of the common supply pipe 240, the modifying agent supply system, the shower head 300a, and the first inert gas supply system may be included in the first supply unit.

[0029] (Exhaust System) As shown in FIG. 1 , an exhaust port 245 for exhausting the atmosphere inside the processing chamber 201 is provided at the bottom of the processing vessel 202. An exhaust pipe 246 is connected to the exhaust port 245. A vacuum pump 248 serving as a vacuum exhaust device is connected to the exhaust pipe 246 via an APC (Auto Pressure Controller) valve 247 that controls the pressure inside the processing chamber 201 to a predetermined level. The APC valve 247 is configured to evacuate and stop the vacuum exhaust inside the processing chamber 201 by opening and closing the valve while the vacuum pump 248 is operating. The exhaust port 245, the exhaust pipe 246, and the APC valve 247 mainly constitute an exhaust system. The vacuum pump 248 may be included in the exhaust system.

[0030] (Fluid Control Mechanism) When the above-described mechanism is used to supply a fluid that forms a flowing film onto the wafer 200 supported on the substrate support surface 211 a, there is a risk that the fluid may penetrate between the wafer 200 and the substrate support surface 211 a. To solve this problem, the substrate processing apparatus 100 in this embodiment further has the following structure.

[0031] First, a shower head 300b serving as a gas dispersion mechanism is further provided along the inner wall of the processing vessel 202 on the outer periphery of the shower head 300a configured in the upper part of the processing vessel 202 .

[0032] The shower head 300b includes a dispersion plate 255 for dispersing the inert gas. The dispersion plate 255 is disposed above the non-substrate support surface 211b. The space upstream (above) of the dispersion plate 255 is a buffer chamber 252b, and the space downstream (below) of the dispersion plate 255 is the processing chamber 201. The dispersion plate 255 has a plurality of through-holes 255b. The buffer chamber 252b communicates with the processing chamber 201 via the plurality of through-holes 255b provided in the dispersion plate 255.

[0033] An inlet hole 441 for introducing an inert gas into the shower head 300b is provided at the top of the processing vessel 202. A supply pipe 451 is connected to the inlet hole 441. An MFC 452 and a valve 453 are provided in this order from the upstream side of the gas flow in the supply pipe 451.

[0034] An inert gas is supplied from the supply pipe 451 into the processing chamber 201 via the MFC 452, the valve 453, and the shower head 300b. The supply pipe 451 is used to supply an inert gas to the non-substrate support surface 211b when performing a film formation process described below. The inert gas supplied from the supply pipe 451 to the non-substrate support surface 211b can guide a fluid film formed on the wafer 200 that attempts to infiltrate between the wafer 200 and the substrate support surface 211a onto the non-substrate support surface 211b and promote its downward movement. This makes it possible to prevent the fluid film formed on the wafer 200 from infiltrating between the wafer 200 and the substrate support surface 211a. The inert gas supplied from the supply pipe 451 to the non-substrate support surface 211b is also referred to as an infiltration prevention gas.

[0035] A second inert gas supply system is mainly configured by the supply pipe 451, the MFC 452, and the valve 453. The second inert gas supply system is also referred to as a second supply unit. The shower head 300b may be included in the second supply unit.

[0036] Furthermore, the support portion 210 has a non-substrate supporting surface 211b on the same side as the substrate supporting surface 211a. The non-substrate supporting surface 211b is a surface different from the substrate supporting surface 211a and is provided to surround the outer periphery of the substrate supporting surface 211a. During processing of the wafer 200, the wafer 200 is placed on the substrate supporting surface 211a, but not on the non-substrate supporting surface 211b. The non-substrate supporting surface 211b is provided with a structure that promotes the movement of, for example, a fluid film (fluid film) formed on the wafer 200 in a film formation process using a fluid (gas, mist, liquid, etc.) described below. Specifically, the structure (non-substrate supporting surface 211b) is configured to slope downward from the outer edge of the substrate supporting surface 211a. The structure (non-substrate supporting surface 211b) is configured to slope toward a gutter 411 serving as a first discharge portion (see FIG. 3B). Because the gutter 411 is a structure through which a fluid film flows, it is simply referred to as a flow path or a first flow path.

[0037] A gutter 411 serving as a first discharge section is provided at the lower end of the non-substrate support surface 211b. The gutter 411 may be annular in plan view, for example, circular along the outer periphery of the non-substrate support surface 211b. In other words, the gutter 411 may be circular with the center of the substrate support surface 211a as its axis. This configuration allows the film on the upper part of the non-substrate support surface 211b to be uniformly removed in the circumferential direction. Therefore, even if the flowing film on the wafer 200 and the flowing film on the non-substrate support surface are continuous, the flowing film on the non-substrate support surface 211b can be removed while maintaining the uniformity of the film thickness of the flowing film on the wafer 200. The gutter 411 may be heated by heaters 213a and 213b. Specifically, the heaters 213a and 213b may be heated to a temperature at which the flowing film in the gutter 411 can maintain its fluidity. This configuration can prevent the flowing film from clogging the gutter 412. Therefore, the fluid film does not stagnate near the wafer 200, and therefore it is possible to maintain the uniformity within the wafer 200.

[0038] The gutter 411 is used to discharge a fluid film formed on at least one of the non-substrate support surface 211b and the wafer 200 in a film formation process described later. As described above, the non-substrate support surface 211b is configured to be inclined downward. This allows a fluid film formed on the wafer 200 and flowing onto the non-substrate support surface 211b, or a fluid film formed on the non-substrate support surface 211b, to be moved into the gutter 411 and discharged in a film formation process described later.

[0039] As shown in FIG. 3B , a discharge pipe 413 is connected to the gutter 411. A pump 415 serving as a discharge device is connected to the discharge pipe 413 via a valve 414, which is an on-off valve. The valve 414 is configured so that, for example, a fluidized film that has moved from the non-substrate support surface 211 b can be discharged or stopped from within the gutter 411 by opening and closing the valve while the pump 415 is operating. At least one of the discharge pipe 413, the valve 414, and the pump 415 may be included in a first discharge unit. The discharge pipe 413 in the first discharge unit may be heated to maintain the fluidity of the fluidized film. For example, outside the processing chamber, a resistance heater 416 may be wrapped around the discharge pipe 413 to heat the inside of the discharge pipe 413 to a temperature that maintains the fluidity of the fluidized film.

[0040] A heater 213b serving as a second heating section is incorporated below the non-substrate supporting surface 211b of the support table 211. The heater 213b is used to heat the non-substrate supporting surface 211b in a film forming process described later.

[0041] The support table 211 has a slit 212 provided between the substrate support surface 211a and a gutter 412 (described later) (see FIG. 3A). The slit 212 can be annular in plan view (within the substrate support surface 211a), for example, circular along the outer periphery of the substrate support surface 211a. Note that, in this embodiment, as an example, a case where one slit 212 having a circular plan view shape is provided is shown, but the plan view shape and number of slits 212 are not limited thereto. The slit 212 is formed on the wafer 200, for example, in a film formation process (described later), and is used to discharge a fluid film (a fluid film formed between the wafer 200 and the substrate support surface 211a) that infiltrates between the wafer 200 and the substrate support surface 211a. A gutter 412 (described later) is provided at the lower end of the slit 212 (see FIG. 3B). The gutter 412 also serves as a flow path through which the fluid film flows, and is therefore simply referred to as a flow path or a second flow path. The slit 212 is also simply referred to as a flow path or a third flow path. By shaping the slit 212 to follow the outer periphery of the substrate support surface 211a in a planar view, the flow film between the wafer 200 and the substrate support surface can be removed uniformly around the circumference, thereby maintaining uniformity in the state of the flow film on the wafer 200, for example, in terms of film thickness.

[0042] A gutter 412 is provided at the lower end of the slit 212. The gutter 412 may be circular and may follow the outer periphery of the substrate support surface 211a.

[0043] The second discharge section is mainly composed of the slit 212 and the gutter 412. The second discharge section is provided along the outer periphery of the substrate support surface 211a and is used to discharge a fluid film formed between the wafer 200 and the non-substrate support surface 211b in the film formation process described below. The gutter 412 may be heated by heaters 213a and 213b. Specifically, the heaters 213a and 213b may be heated to an extent that the fluid film in the gutter 412 can maintain its fluidity. In this way, clogging of the gutter 412 by the fluid film can be suppressed. Therefore, the fluid film does not stagnate near the wafer 200, and it is possible to maintain in-plane uniformity on the wafer 200.

[0044] The gutter 412 is connected to the above-mentioned exhaust pipe 413. A pump 415 serving as an exhaust device is connected to the exhaust pipe 413 via a valve 414, which is an on-off valve. The valve 414 is configured to, for example, discharge or stop the fluid film that has wrapped around the backside of the wafer 200 (between the wafer 200 and the non-substrate support surface 211b) from the gutter 412 by opening and closing the valve while the pump 415 is operating. At least one of the exhaust pipe 413, the valve 414, and the pump 415 may be included in a second exhaust unit. The exhaust pipe 413 in the second exhaust unit may be heated to maintain the fluidity of the fluid film. For example, outside the processing chamber, a resistance heater 416 may be wrapped around the exhaust pipe 413 to heat the inside of the exhaust pipe 413 to a temperature that maintains the fluidity of the fluid film. The resistance heater 416 is also referred to as a third heating unit. At least one or both of heater 213a and heater 213b that heats at least one or both of gutter 411 and gutter 412 may be included in the third heating unit.

[0045] A slit 215 is provided in the substrate support surface 211a, inside the slit 212 (specifically, on the inner periphery). In a cross-sectional view, the slit 215 is configured as a groove opening upward. In a plan view (within the substrate support surface 211a), the slit 215 may be annular, for example, circular along the outer periphery of the substrate support surface 211a. In a plan view, the slit 215 is preferably provided inside the slit 212, which is on the center side of the substrate support surface (see FIG. 3A). Note that, in this embodiment, as an example, a case where one slit 215 having a circular shape in a plan view is provided is shown. However, the shape and number of the slits 215 in a plan view are not limited thereto. The slit 215 is used to supply an inert gas toward the back surface of the wafer 200 in a film formation process described below, for example, to prevent a flowing film formed on the wafer 200 from penetrating between the wafer 200 and the substrate support surface 211a. Hereinafter, the inert gas supplied from the slit 215 toward the back surface of the wafer 200 is also referred to as a penetration suppression gas. The slit 215 is a flow path for the inert gas, and is therefore simply called a flow path or a fourth flow path.

[0046] A supply pipe 461 is connected to the slit 215. The supply pipe 461 is provided with an MFC 462 and a valve 463, in this order from the upstream side of the gas flow. An inert gas is supplied from the supply pipe 461 toward the backside of the wafer 200 via the MFC 462, the valve 463, and the slit 215. The inert gas (penetration suppression gas) supplied from the slit 215 toward the backside of the wafer 200 flows from the upper end of the slit 215 toward the outer edge of the substrate support surface 211a (see FIG. 3B). This flow of inert gas can prevent a fluid film formed on the wafer 200 from penetrating between the wafer 200 and the substrate support surface 211a. Furthermore, if the fluid film has high viscosity, the flow rate of the inert gas may be increased to push out the fluid film so as to remove it.

[0047] A third inert gas supply system is mainly constituted by the supply pipe 461, the MFC 462, and the valve 463. Furthermore, a third supply unit is mainly constituted by the third inert gas supply system and the slit 215.

[0048] (Controller) The substrate processing apparatus 100 includes a controller 310 that controls the operation of each part of the substrate processing apparatus 100 .

[0049] An outline of the controller 310 is shown in Figure 2. The controller 310, which is a control unit (control means), is configured as a computer equipped with a CPU (Central Processing Unit) 310a, RAM (Random Access Memory) 310b, a storage device 310c, an I / O port 310d, and a transmission / reception unit 310e. The RAM 310b, storage device 310c, and I / O port 310d are configured to be able to exchange data with the CPU 310a via an internal bus 310f. The control unit is also called a device control unit.

[0050] The controller 310 is configured to be connectable to an input / output device 311 configured as, for example, a touch panel, and an external storage device 312 .

[0051] The storage device 310c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), etc. Control programs for controlling the operation of the substrate processing apparatus 100, program recipes describing procedures and conditions for substrate processing (described later), etc., are readably recorded and stored in the storage device 310c. A process recipe is a combination of procedures in a substrate processing process (described later) that are executed by the controller 310 to obtain a predetermined result, and functions as a program. Hereinafter, the program recipes, control programs, etc. are collectively referred to simply as a program (program product). In this specification, the term "program" may refer to only a program recipe, only a control program, or both. The RAM 310b is configured as a memory area (work area) for temporarily storing programs, data, etc. read by the CPU 310a.

[0052] The I / O port 310d is connected to each component of the substrate processing apparatus 100, such as the gate valve 205, heaters 213a and 213b, lamp 401, APC valve 247, pump 415, vacuum pump 248, MFCs 252, 262, 272, 282, 452, and 462, and valves 253, 263, 273, 283, 414, 453, and 463.

[0053] The CPU 310a is configured to read and execute a control program from the storage device 310c, and to read a process recipe from the storage device 310c in response to input of an operation command from the input / output device 311. The CPU 310a is configured to be able to control the opening and closing operation of the gate valve 205, the on / off operation and temperature adjustment operation of the heaters 213a and 213b, the on / off operation and temperature adjustment operation of the lamp 401, the pressure adjustment operation of the APC valve 247, the operation of the vacuum pump 248, and the like, in accordance with the contents of the read process recipe.

[0054] The controller 310 is not limited to being configured as a dedicated computer, but may also be configured as a general-purpose computer. For example, the controller 310 according to this embodiment can be configured by preparing an external storage device 312 (e.g., a magnetic tape, a magnetic disk such as a flexible disk or hard disk, an optical disk such as a CD or DVD, or a semiconductor memory such as a USB memory or memory card) storing the above-described program and installing the program on a general-purpose computer using the external storage device 312. The means for supplying the program to the computer is not limited to supplying the program via the external storage device 312. For example, the program may be supplied via a communication means such as the Internet or a dedicated line, without going through the external storage device 312. The storage device 310c and the external storage device 312 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to as recording media. In this specification, the term "recording medium" may refer to the storage device 310c alone, the external storage device 312 alone, or both.

[0055] (2) Substrate Processing Step: A method of processing a substrate (processing method) as one step in a semiconductor device manufacturing process (manufacturing method) using the above-described substrate processing apparatus 100, i.e., an example of a processing sequence for forming a film on the surface of a wafer 200 as a substrate, will be described. In the following description, the operation of each component of the substrate processing apparatus 100 is controlled by a controller 310.

[0056] The processing sequence in this embodiment includes the following steps: step A of placing the wafer 200 on a support part 210 having a substrate support surface 211a that supports the wafer 200 and a non-substrate support surface 211b that is provided on the same side as the substrate support surface 211a and is a surface different from the substrate support surface 211a; step B of supplying the wafer 200 with a fluid that forms a fluid film on the wafer 200; and step C of controlling the state of the film on the non-substrate support surface 211b and the fluid state of the film on the wafer 200.

[0057] Specifically, in the film formation process described below, process B and process C are performed simultaneously to form a fluid film on the wafer 200 while preventing the fluid (fluid film) from penetrating between the wafer 200 and the substrate support surface 211a.

[0058] In step C, at least one of the components constituting the substrate processing apparatus 100 that operate to control the film state on the non-substrate support surface 211b and the flow state of the film on the wafer 200 is referred to as a state control unit.

[0059] In addition, in the post-treatment process described below, the film formed on the wafer 200 is densified.

[0060] The term "wafer" used in this specification may refer to the wafer itself or to a laminate of the wafer and a predetermined layer or film formed on its surface. The term "surface of a wafer" used in this specification may refer to the surface of the wafer itself or to the surface of a predetermined layer or the like formed on the wafer. When described in this specification, "forming a predetermined layer on the surface of a wafer" may mean forming a predetermined layer directly on the surface of the wafer itself or forming a predetermined layer on a layer or the like formed on the wafer. When used in this specification, the term "substrate" is synonymous with the term "wafer".

[0061] Furthermore, the terms "raw material," "reactant," "modifier," and "substance" used in this specification include at least one of a gaseous substance and a liquid substance. A liquid substance includes a mist-like substance. That is, each of the raw material, reactant, and modifier may contain a gaseous substance, a liquid substance such as a mist-like substance, or both.

[0062] (Substrate Loading and Placing Process) The support table 211 is lowered to the above-mentioned transfer position, and the upper ends of the lift pins 207 are made to protrude a predetermined height above the substrate support surface 211a. Subsequently, the gate valve 205 is opened, and the wafer 200 is loaded into the processing chamber 201 and transferred onto the lift pins 207. The wafer 200 is supported in a horizontal position on the lift pins 207. After the wafer 200 is loaded into the processing chamber 201, the gate valve 205 is closed to seal the processing vessel 202. Thereafter, the support table 211 is raised, and the wafer 200 is placed on the substrate support surface 211a provided on the support table 211. Furthermore, the support table 211 is raised to the processing position, and the wafer 200 is raised to the processing position within the processing chamber 201.

[0063] (Pressure and Temperature Adjustment Process) After the loading of the wafer 200 is completed, the inside of the processing chamber 201, i.e., the space in which the wafer 200 is present, is evacuated (reduced pressure exhausted) by the vacuum pump 248 so that the desired pressure (vacuum level) is reached. At this time, the pressure inside the processing chamber 201 is measured by a pressure sensor, and the APC valve 247 is feedback-controlled based on this measured pressure information. In addition, the wafer 200 in the processing chamber 201 is heated by the heaters 213 a, 213 b and the lamp 401 as necessary so that the wafer 200 in the processing chamber 201 is at a desired processing temperature (first temperature) and the non-substrate support surface 211 b is at a desired temperature (second temperature).

[0064] (Film Forming Step) Thereafter, the film forming step is carried out.

[0065] (First Process) With the wafers 200 in the process chamber 201 maintained at a desired process temperature (first temperature) and the non-substrate support surface 211b maintained at a desired temperature (second temperature), an inert gas is supplied from the second supply unit to the non-substrate support surface 211b. Specifically, the valve 453 is opened to allow the inert gas to flow into the supply pipe 451. The inert gas has a flow rate adjusted by the MFC 452 and is supplied into the process chamber 201 via the shower head 300b. At this time, as shown in FIG. 3(b), the inert gas is supplied to the non-substrate support surface 211b from above the non-substrate support surface 211b (penetration suppression gas supply). This process of supplying the inert gas to the non-substrate support surface 211b before supplying the process gas is referred to as the first process or first process.

[0066] At this time, an inert gas is supplied from the third supply unit to the back surface of the wafer 200 (the gap formed between the wafer 200 and the substrate support surface 211a). Specifically, the valve 463 is opened to allow the inert gas to flow into the supply pipe 461. At this time, as shown in FIG. 3B, the flow rate of the inert gas is adjusted by the MFC 462, and the inert gas is supplied from the upper end of the slit 215 to the gap (infiltration suppression gas supply). This prevents the fluid supplied in the second process from infiltrating into the slit 215.

[0067] (Second Process) After a predetermined time has elapsed since the second and third supply units started supplying inert gas, the first supply unit supplies a fluid (including raw materials, reactants, and their decomposition products and reactants) to the surface of the wafer 200, forming a fluid film on the wafer 200. Specifically, valves 253 and 263 are opened to allow the raw materials and reactants to flow into the supply pipes 251 and 261, respectively. The raw materials and reactants are respectively supplied with flow rates adjusted by MFCs 252 and 252, via the common supply pipe 240 and shower head 300a, into the processing chamber 201, and exhausted from the exhaust port 245. At this time, as shown in FIG. 3(b), the raw materials and reactants are supplied to the wafer 200 from above the wafer 200 (raw materials + reactant supply). At this time, valve 283 may be opened to supply an inert gas (carrier gas, dilution gas) into the processing chamber 201 via the common supply pipe 240 and shower head 300a. The step (process) of supplying the fluid to the wafer 200 in this manner is called a second step or a second process.

[0068] By supplying the raw material and the reactant to the wafer 200 from the first supply unit under processing conditions to be described later, a fluid film composed of the fluid can be formed on the wafer 200 while maintaining the fluidity of the raw material, the reactant, and the fluid containing their decomposition products and reactants. The fluid contains polymers such as oligomers and polymers. Disilane (Si ２ H ６ ) as a reactant and ammonia (NH ３ ) and water (H ２ O), the fluid is Si ２ H６ , N.H. ３ , H ２ O, and polymers containing decomposition products or reaction products thereof.

[0069] By supplying an inert gas (infiltration suppression gas) from the second supply unit to the non-substrate support surface 211b under the processing conditions described below, the flowing film formed on the wafer 200 and flowing onto the non-substrate support surface 211b can be guided downward, flowed into the gutter 411, and discharged.

[0070] In addition, a flowing film that is formed on the wafer 200 and attempts to penetrate from the outer periphery of the wafer 200 to the back side of the wafer 200 (between the wafer 200 and the substrate support surface 211a) flows into the slit 212, then into the gutter 412 and is discharged.

[0071] Under processing conditions described below, the inert gas (infiltration suppression gas) supplied from the third supply unit to the gap formed between the wafer 200 and the substrate support surface 211a flows from the upper end of the slit 215 toward the outer edge of the substrate support surface 211a (see FIG. 3B). This prevents a fluid film formed on the wafer 200 and infiltrating between the wafer 200 and the substrate support surface 211a from penetrating into the center of the back surface of the wafer 200.

[0072] After forming a fluid film on the wafer 200 while suppressing the infiltration of the fluid film between the wafer 200 and the substrate support surface 211a, the valves 253 and 263 are closed to stop the supply of fluid to the wafer 200 from the first supply unit.

[0073] (Third Process) After a predetermined time has elapsed since the supply of fluid from the first supply unit was stopped, the valves 453 and 463 are closed, and the supply of inert gas (penetration suppression gas) from the second and third supply units is stopped. At this time, the valve 283 is opened, and inert gas is supplied into the processing chamber 201 via the common supply pipe 240 and the shower head 300a. The inert gas supplied via the common supply pipe 240 and the shower head 300a acts as a purge gas, and in conjunction with the exhaust system, the processing chamber 201 is purged (purging, purging process). At this time, the fluid film (also referred to as fluid) adhering to the non-substrate support surface 211b is exhausted along with intermediates of the fluid and other by-products present in the processing chamber 201. During this time, the heating process using the heater 213b continues. Here, heating is performed at a temperature that maintains the fluidity of the fluid film. This temperature may be any temperature that maintains the fluidity of the film, and the heater 213b may be heated to a temperature different from that used in the second process. However, if it takes time to reach that temperature, the temperature of the heater 213b in the second process may be maintained. Once purging is complete, heating of the non-substrate support surface 211b by the heater 213b may be stopped. By continuing to operate the heater 213b, the fluidity of the fluid film on the non-substrate support surface 211b can be maintained. The process (process) performed between the stop of fluid supply and the elapse of a predetermined time is referred to as the third process or third process. Furthermore, by stopping heating of the heater 213b after purging is complete, power consumption can be reduced.

[0074] Thus, in this embodiment, the supply of inert gas (infiltration suppression gas) from the second supply unit and the third supply unit begins earlier than the supply of fluid from the first supply unit, and the supply of inert gas (infiltration suppression gas) from the second supply unit and the third supply unit begins to be stopped later than the supply of fluid from the first supply unit is stopped.

[0075] The raw material (fluid) is a substance containing silicon (Si), for example, monosilane (SiH ４ ), Si ２ H ６ As the raw material, one or more of these can be used.

[0076] The reactant (fluid) is a substance containing nitrogen (N), such as NH ３ , Diazene (N ２ H ２ ), hydrazine (N ２ H ４ ), N ３ H ８ One or more of these can be used as the reactant.

[0077] Examples of inert gases (penetration suppression gas, carrier gas, dilution gas, purge gas) include nitrogen (N ２ Inert gases that can be used include rare gases such as argon (Ar) gas, helium (He) gas, neon (Ne) gas, krypton (Kr) gas, and xenon (Xe) gas. One or more of these can be used as the inert gas.

[0078] Examples of processing conditions for supplying the raw materials, reactants, and inert gas in this step include: processing temperature (first temperature): 0 to 80°C, preferably room temperature (25°C) to 60°C; temperature of the non-substrate supporting surface 211b (second temperature higher than the first temperature): 50 to 200°C, preferably 60 to 150°C; processing pressure: 1 to 30,000 Pa, preferably 133 to 10,000 Pa; processing time: 1 to 180 minutes, preferably 5 to 60 minutes; raw material supply flow rate: 0.02 to 2 slm, preferably 0.05 to 0.5 slm; reactant supply flow rate: 0.05 to 50 slm, preferably 0.1 to 10 slm; inert gas (second and third inert gas supply systems) supply flow rate: 0.01 to 10 slm; inert gas (first inert gas supply system) supply flow rate: 0 to 20 slm.

[0079] In this specification, when a numerical range such as "0 to 80°C" is expressed, it means that the lower limit and the upper limit are included in the range. Therefore, for example, "0 to 80°C" means "0°C or higher and 80°C or lower." The same applies to other numerical ranges. In this specification, the processing temperature means the temperature of the wafer 200 or the temperature inside the processing chamber 201, and the processing pressure means the pressure inside the processing chamber 201. The processing time means the time the processing continues. In addition, when the supply flow rate includes 0 slm, 0 slm means that the substance is not supplied. These also apply to the following explanations.

[0080] By heating the wafer 200 at a first temperature, a fluid film composed of the fluid can be formed on the wafer 200 while maintaining the fluidity of the fluid, such as a raw material. Furthermore, by heating the non-substrate support surface 211b at a second temperature higher than the first temperature, for example, a film formed on the wafer 200 and flowing to the non-substrate support surface 211b can be vaporized and removed from the non-substrate support surface 211b. This prevents the film from remaining on the non-substrate support surface 211b. The second temperature may include a temperature that vaporizes the fluid (fluid film), such as a raw material, as well as a temperature that reduces the film density of the fluid film and a temperature that reduces the adhesive force of the fluid film to the non-substrate support surface 211b.

[0081] (Post-treatment step) Thereafter, a post-treatment step is carried out.

[0082] In this process, first, the output of at least one of the lamp 401 and the heater 213a is adjusted so as to change the temperature of the wafer 200 to a processing temperature (third temperature) higher than the processing temperature (first temperature) in the film formation process.

[0083] When the temperature of the wafer 200 reaches the third temperature, a modifying agent is supplied from the first supply unit to the surface of the wafer 200, i.e., to the fluid film formed on the wafer 200. Specifically, the valve 273 is opened to allow the modifying agent to flow into the supply pipe 271. The flow rate of the modifying agent is adjusted by the MFC 272, and the modifying agent is supplied into the processing chamber 201 via the common supply pipe 240 and the shower head 300a, and is exhausted from the exhaust port 245. At this time, the modifying agent is supplied to the wafer 200 (modifying agent supply). At this time, the valve 283 may be opened to supply an inert gas (carrier gas, dilution gas) into the processing chamber 201 via the common supply pipe 240 and the shower head 300a.

[0084] By supplying the modifier to the wafer 200 under processing conditions described below, a dehydration condensation reaction or the like occurs in the fluid film formed on the wafer 200, converting the unreacted bonding groups contained in the film, and strengthening the bonds. This makes it possible to modify the fluid film formed on the wafer 200 into a film containing strong bonds. It also makes it possible to expel excess components (impurities) contained in the fluid film formed on the wafer 200, repair defects present in the film, and densify and harden the film.

[0085] After the fluid film formed on the wafer 200 has been densified, the valve 273 is closed to stop the supply of the modifying agent from the first supply unit into the processing chamber 201 .

[0086] The modifiers include oxygen (O ２ ) gas, ozone (O ３ ) Gas, O ２ Gas + Hydrogen (H ２ ) Gas, O ２ Gas + Deuterium (D ２ ) Gas, O ３ Gas + H ２ Gas, O ３ Gas + D ２ Gas, hydrogen peroxide (H ２ O ２ ) gas, water vapor (H ２ O gas), nitrous oxide (N ２O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO ２ ) gas, carbon dioxide (CO ２ Oxygen-containing gases such as carbon monoxide (CO) gas and the like can be used. ２ Gas + H ２ In the case of a description of two gases, such as "O gas", ２ Gas and H ２ When supplying a mixed gas, the two gases may be mixed (premixed) in a supply pipe and then supplied into the processing chamber 201, or the two gases may be supplied separately into the processing chamber 201 through different supply pipes and then mixed (postmixed) in the processing chamber 201.

[0087] In addition, the modifier is H ２ hydrogen-containing gases such as D ２ A deuterium-containing gas such as a gas can be used.

[0088] As the modifier, one or more of these can be used.

[0089] Examples of treatment conditions when supplying the modifier in this step include: treatment temperature (second temperature): 100 to 1000°C, preferably 200 to 600°C; treatment pressure: 10 to 80000 Pa, preferably 200 to 6000 Pa; treatment time: 300 to 10800 seconds; and modifier supply flow rate: 0.01 to 20 slm.

[0090] (After-Purge and Atmospheric Pressure Return Process) After the post-treatment process is completed, an inert gas is supplied from the first supply unit into the process chamber 201. At this time, the APC valve 247 is opened to its maximum degree to evacuate the process chamber 201. This purges the process chamber 201 and the shower head 300a (after-purge). Thereafter, the atmosphere in the process chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the process chamber 201 is returned to normal pressure (atmospheric pressure return).

[0091] (Substrate Unloading Process) Thereafter, the processed wafer 200 is unloaded from the processing chamber 202 in the reverse order of the substrate loading / placing process described above. Thereafter, a predetermined process is performed on the processed wafer 200 as necessary.

[0092] (4) Effects of this embodiment According to this embodiment, one or more of the following effects can be achieved.

[0093] (a) By making it possible to control the film state on the non-substrate support surface 211b and the fluid state of the film on the wafer 200 using the state control unit, it is possible to suppress the infiltration of fluid onto the backside of the wafer 200. This makes it possible to suppress the formation of a fluid film between the wafer 200 and the substrate support surface 211a or on the outer periphery of the wafer 200. As a result, it is possible to prevent the wafer 200 from sticking to the support portion 210 and the generation of particles in the processing chamber 201.

[0094] (b) In the film formation process, by supplying an inert gas from the second supply unit to the non-substrate support surface 211b, the fluidized film formed on the wafer 200 and flowing onto the non-substrate support surface 211b can be guided downward, flowed into the gutter 411, and discharged. This makes it possible to reliably prevent the wafer 200 from sticking to the support unit 210 and the generation of particles in the processing chamber 201.

[0095] (c) By providing a heater 213b that heats the non-substrate supporting surface 211b at a second temperature so that the film adhering to the non-substrate supporting surface 211b can be removed, it is possible to prevent a fluid film from remaining on the non-substrate supporting surface 211b, thereby reliably preventing the wafer 200 from sticking to the support portion 210 and the generation of particles in the processing chamber 201.

[0096] (d) By providing the heater 213a that heats the wafer 200 at the first temperature that is lower than the second temperature, a fluid film can be formed on the wafer 200 and removed from the non-substrate support surface 211b, thereby reliably preventing the wafer 200 from sticking to the support portion 210 and the generation of particles in the processing chamber 201.

[0097] (e) The non-substrate support surface 211b is provided with a structure that promotes fluid film movement. This makes it possible to prevent a fluid film formed on the wafer 200 and flowing onto the non-substrate support surface 211b, or a fluid film formed on the non-substrate support surface 211b, from remaining on the non-substrate support surface 211b. It also makes it possible to prevent a fluid film formed on the wafer 200 from penetrating between the wafer 200 and the substrate support surface 211a. As a result, it is possible to reliably prevent the wafer 200 from sticking to the support portion 210 and the generation of particles in the processing chamber 201. The structure that promotes fluid film movement is also called a fluid portion.

[0098] (f) The structure (non-substrate support surface 211b) is configured to slope downward. This makes it possible to prevent a fluid film formed on the wafer 200 and flowing onto the non-substrate support surface 211b, or a fluid film formed on the non-substrate support surface 211b, from remaining on the non-substrate support surface 211b. Furthermore, it is possible to prevent a fluid film formed on the wafer 200 from penetrating between the wafer 200 and the substrate support surface 211a. As a result, it is possible to reliably prevent the wafer 200 from sticking to the support portion 210 and the generation of particles in the processing chamber 201.

[0099] (g) By providing a gutter 411 for discharging a fluid film formed on at least one of the non-substrate support surface 211b and the wafer 200, it is possible to reliably prevent particle generation within the processing chamber 201.

[0100] (h) The structure (non-substrate support surface 211b) is configured to be inclined toward the gutter 411. This allows a fluid film formed on the wafer 200 and flowing onto the non-substrate support surface 211b, or a fluid film formed on the non-substrate support surface 211b, to easily flow into the gutter 411 and be discharged. As a result, it is possible to reliably prevent particle generation within the processing chamber 201.

[0101] (i) The gutter 411 is provided along the outer periphery of the non-substrate supporting surface 211b, so that an excess fluid film can be removed over the entire outer periphery of the non-substrate supporting surface 211b.

[0102] (j) By providing a second discharge part that discharges a fluid film formed between the wafer 200 and the substrate support surface 211a, it is possible to discharge the fluid film that has spread around (penetrated) to the backside of the wafer 200. This makes it possible to reliably prevent the wafer 200 from sticking to the support part 210 and the generation of particles in the processing chamber 201.

[0103] (k) The second discharge portion is provided along the outer periphery of the substrate support surface 211a. This prevents a fluid film that forms on the wafer 200 and penetrates between the wafer 200 and the substrate support surface 211a from penetrating into the center of the back surface of the wafer 200. This reliably prevents the wafer 200 from sticking to the support portion 210.

[0104] (l) By providing a third supply unit that supplies an inert gas between the wafer 200 and the substrate support surface 211a, it is possible to prevent a fluid film that is formed on the wafer 200 and that has penetrated between the wafer 200 and the substrate support surface 211a from penetrating into the center of the back surface of the wafer 200.

[0105] (m) In the film forming process, by starting the supply of the inert gas (penetration suppression gas) earlier than the supply of the fluid, it is possible to effectively suppress the penetration of the fluid into the backside of the wafer 200.

[0106] Furthermore, in the film forming process, by stopping the supply of the inert gas (penetration suppression gas) later than the supply of the fluid, it is possible to effectively suppress the penetration of the fluid into the backside of the wafer 200 .

[0107] Other Aspects of the Present Disclosure The above describes specific aspects of the present disclosure. However, the present disclosure is not limited to the above aspects and can be modified in various ways without departing from the spirit and scope of the present disclosure.

[0108] Although not specifically described in the above embodiment, it is preferable to rotate the support table 211 by the above-described lifting and rotating mechanism during the film formation process, so that the flowing film on the non-substrate supporting surface 211b can be efficiently discharged into the gutter 411.

[0109] Although not specifically described in the above embodiment, it is preferable that the heater 213b continue heating the non-substrate support surface 211b until the purge, which is performed after the supply of the inert gas (infiltration suppression gas) from the second supply unit is stopped, is completed. This ensures that films formed on the wafer 200 and flowing onto the non-substrate support surface 211b, as well as films formed on the non-substrate support surface 211b, are vaporized and removed. In this way, it is possible to reliably prevent these films from remaining on the non-substrate support surface 211b.

[0110] In the above-described embodiment, the non-substrate support surface 211b is configured to slope downward from the outer edge of the substrate support surface 211a, but the present disclosure is not limited to this. For example, the non-substrate support surface 211b may be configured to extend horizontally outward from the substrate support surface 211a. However, a configuration in which the non-substrate support surface 211b slopes downward from the outer edge of the substrate support surface 211a is preferable in that it can prevent a flowing film from stagnating on the non-substrate support surface 211b during the film formation process.

[0111] In the above-described embodiment, the substrate processing apparatus 100 is described as being provided with the heater 213b, the second supply unit, the third supply unit, the gutter 411, and the second discharge unit, but the present disclosure is not limited thereto. For example, the substrate processing apparatus 100 may not be provided with all of these components. In this embodiment, the same effects as those in the above-described embodiment can be obtained.

[0112] In the above-described embodiment, the second supply unit and the third supply unit supply the inert gas at the same time, but the present disclosure is not limited to this. For example, the second supply unit and the third supply unit may supply the inert gas at different times, as long as they do so before the first supply unit supplies the raw material or other fluid. In this embodiment, the same effects as those in the above-described embodiment can be obtained.

[0113] Although not specifically described in the above embodiment, the second supply unit is preferably configured so that the inert gas supplied to the non-substrate support surface 211b is supplied to the upper end side of the non-substrate support surface 211b, rather than onto the wafer 200 (e.g., the outer periphery or edge of the wafer 200). This embodiment also provides the same effects as the above embodiment. Furthermore, this embodiment can further prevent a fluid film formed on the wafer 200 from penetrating between the wafer 200 and the substrate support surface 211a, while maintaining the in-plane uniformity of the wafer 200.

[0114] Although not specifically described in the above embodiment, it is preferable to vary the ratio between the amount of inert gas supplied from the slit 215 toward the back surface of the wafer 200 and the amount of the fluid film discharged from the second discharge part, depending on the amount of the fluid film formed on the wafer 200 and penetrating between the wafer 200 and the substrate support surface 211 a. This makes it possible to control the amount of the fluid film penetrating between the wafer 200 and the substrate support surface 211 a.

[0115] It is preferable that the recipes used for each process are individually prepared according to the process content and recorded and stored in the storage device 310c via an electric communication line or the external storage device 312. When starting each process, it is preferable that the CPU 310a appropriately selects an appropriate recipe according to the process content from among the multiple recipes recorded and stored in the storage device 310c. This enables the processing device to reproducibly form films with various film types, composition ratios, film qualities, and film thicknesses. It also reduces the burden on the operator, avoids operational errors, and enables each process to be started quickly.

[0116] The above-mentioned recipes do not necessarily have to be newly created, but may be prepared by modifying an existing recipe that has already been installed in the processing device. When modifying a recipe, the modified recipe may be installed in the processing device via an electric communication line or a recording medium on which the recipe has been recorded. Furthermore, an existing recipe that has already been installed in the processing device may be directly modified by operating the input / output device 311 provided in the existing processing device.

[0117] In the above-described embodiment, an example of forming a film using a single-wafer processing apparatus that processes one or several substrates at a time has been described. The present disclosure is not limited to the above-described embodiment, and can be suitably applied, for example, to a case where a film is formed using a batch-type processing apparatus that processes several substrates at a time. Furthermore, in the above-described embodiment, an example of forming a film using a processing apparatus having a hot-wall processing furnace has been described. The present disclosure is not limited to the above-described embodiment, and can be suitably applied to a case where a film is formed using a processing apparatus having a cold-wall processing furnace.

[0118] The above-described embodiments and modifications may be used in combination as appropriate. The processing procedures and processing conditions in such a case may be the same as those of the above-described embodiments and modifications, for example.

[0119] 200 Wafer (substrate) 211a Substrate support surface 211b Non-substrate support surface 210 Support portion

Claims

1. A substrate processing apparatus having: a support unit including a substrate support surface that supports a substrate, and a non-substrate support surface that is provided on the same side as the substrate support surface and is different from the substrate support surface; a first supply unit that supplies the substrate with a fluid that forms a fluid film on the substrate; a state control unit that can control the state of the film on the non-substrate support surface and the fluid state of the film on the substrate; and a control unit that is configured to be able to control at least the support unit, the first supply unit, and the state control unit.

2. The substrate processing apparatus according to claim 1, wherein the state control unit includes a second supply unit that supplies an inert gas to the non-substrate support surface.

3. The substrate processing apparatus according to claim 1 or claim 2, wherein the state control unit includes a second heating unit capable of heating the non-substrate support surface to a second temperature at which a film adhering to the non-substrate support surface can be removed.

4. The substrate processing apparatus according to claim 3, wherein the state control unit includes a first heating unit capable of heating the substrate at a first temperature lower than the second temperature.

5. The substrate processing apparatus according to claim 1, wherein the control unit is configured to be capable of controlling at least the first supply unit and the state control unit so as to perform a second process of supplying a fluid from the first supply unit to the substrate and a first process of operating the state control unit before the second process.

6. The substrate processing apparatus according to claim 3, wherein the control unit is configured to be capable of controlling at least the first supply unit and the state control unit to perform a second process in which fluid is supplied from the first supply unit to the substrate and the second heating unit is operated, and a third process in which, after the second process, the supply of fluid from the first supply unit is stopped and the second heating unit is operated.

7. A substrate processing apparatus as described in claim 6, further comprising a processing chamber for processing the substrate, and an exhaust system communicating with the processing chamber, wherein the control unit is configured to be able to control at least the exhaust system and the second heating unit so as to further exhaust fluid adhering to the non-substrate support surface during the third processing, and stop operation of the second heating unit once the fluid has been discharged from the processing chamber.

8. The substrate processing apparatus according to claim 1, wherein the state control unit includes a first discharge unit that discharges a fluid film formed on at least one of the non-substrate support surface and the substrate.

9. The substrate processing apparatus according to claim 8, wherein the first discharge section includes a first flow path, and the first flow path has a shape that follows the outer periphery of the non-substrate support surface in a plan view.

10. The substrate processing apparatus according to claim 1, wherein the state control unit comprises a second discharge unit that discharges a fluid film formed between the substrate and the substrate support surface.

11. The substrate processing apparatus according to claim 10, wherein the second discharge section is provided along the outer periphery of the substrate support surface.

12. A substrate processing apparatus as described in claim 10, wherein the second discharge section comprises: a second flow path for discharging the fluid that constitutes the fluid film; and a third flow path provided between the surface of the support section and the second flow path and through which the fluid passes.

13. The substrate processing apparatus according to claim 12, wherein the third flow path has a shape that follows the outer periphery of the substrate support surface in a plan view.

14. The substrate processing apparatus according to claim 12, wherein the second exhaust section further comprises a fourth flow path provided on the inner circumferential side of the third flow path and through which an inert gas is supplied.

15. The substrate processing apparatus of claim 1, wherein the non-substrate support surface is provided with a structure that promotes fluid film movement.

16. The substrate processing apparatus of claim 15, wherein the structure is configured to slope downward.

17. The substrate processing apparatus of claim 1, wherein the state control unit comprises a first discharge unit that discharges a fluid film formed on the non-substrate support surface, and a second discharge unit that discharges a fluid film formed between the substrate and the substrate support surface, and further comprises a third heating unit that can heat at least one or both of the first discharge unit and the second discharge unit.

18. A substrate processing method comprising the steps of: placing a substrate on a support section having a substrate support surface that supports the substrate and a non-substrate support surface that is provided on the same side as the substrate support surface and is different from the substrate support surface; supplying a fluid to the substrate that forms a fluid film on the substrate; and controlling the state of the film on the non-substrate support surface and the fluid state of the film on the substrate.

19. A method for manufacturing a semiconductor device, comprising the steps of: placing a substrate on a support section having a substrate support surface that supports the substrate and a non-substrate support surface that is provided on the same side as the substrate support surface and is different from the substrate support surface; supplying a fluid that forms a fluid film on the substrate to the substrate; and controlling the state of the film on the non-substrate support surface and the fluid state of the film on the substrate.

20. A program that causes a substrate processing apparatus to execute, by a computer, the following steps: placing a substrate on a support section that has a substrate support surface that supports the substrate and a non-substrate support surface that is provided on the same side as the substrate support surface and is different from the substrate support surface; supplying a fluid that forms a fluid film on the substrate to the substrate; and controlling the state of the film on the non-substrate support surface and the fluid state of the film on the substrate.

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