Gas supply apparatus and substrate processing apparatus

Abstract

The present invention relates to a gas supply apparatus, comprising: a chamber including a processing area divided into a first area and a second area; first gas blocks of n rows formed at the top of the first area; and second gas blocks of m rows formed at the top of the second area, wherein the number of first supply units of the n rows is greater than the number of second supply units of the m rows (n>m).

Description

Gas supply device and substrate processing device

[0001] The present invention relates to a substrate processing device that performs a processing process on a substrate, such as a deposition process.

[0002] In general, in order to manufacture semiconductor devices, display devices, solar cells, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. To this end, substrate processing processes are performed, such as a deposition process for depositing a thin film of a specific material on a substrate, a photo process for selectively exposing the thin film using a photosensitive material, and an etching process for removing the thin film in the selectively exposed portion to form a pattern. These substrate processing processes can be performed by a substrate processing device.

[0003] The above substrate processing device includes a chamber in which a processing process for a substrate is performed, a gas supply unit for supplying gas, and an injection unit for injecting gas supplied from the gas supply unit into the interior of the chamber.

[0004] Here, the injection pressure of the gas injected by the injection unit may affect the quality, such as the film quality, of the thin film formed on the substrate. For example, when forming a thin film by injecting gas on a thin film or substrate with steps, if the injection pressure of the gas injected by the injection unit is weak, the flow rate of the gas delivered to the lower part of the step may be insufficient. Accordingly, the thin film is formed relatively thinner in the lower part of the step than in other parts, and thus the step coverage may be reduced. In consideration of this, the development of a technology capable of controlling the injection pressure of the gas injected by the injection unit is urgently required.

[0005] The present invention has been made to solve the above-described problem, and provides a gas supply device and a substrate processing device capable of controlling the injection pressure of gas injected onto a substrate.

[0006] In order to solve the above-described problem, the present invention may include the following configuration.

[0007] A gas supply device according to the present invention may include a chamber including a processing area divided into a first area and a second area; n rows of first gas blocks formed above the first area; and m rows of second gas blocks formed above the second area. The number of first supply units in the n rows may be greater than the number of second supply units in the m rows (n>m).

[0008] The present invention may include a gas block having a gas path formed therein; one or more charging tanks formed within the gas block; and a pressure measuring means connected to the inlet or outlet of the charging tank or to the inlet and outlet.

[0009] The present invention may include a chamber; a gas block having a gas path formed therein; one or more charging tanks formed within the gas block; a first gas line connected to a rear end of the charging tank within the gas block and connected to the chamber; a second gas line connected to a rear end of the charging tank within the gas block and connected to an exhaust line of the chamber; and a gas valve installed at a rear end of the charging tank and connecting or blocking the rear end of the charging tank and the first gas line or the second gas line.

[0010] The present invention may include a gas block including a gas passage therein; a first gas line formed in the gas block and supplying a first gas to the gas passage; and a second gas line connected to the first gas line at an angle in the longitudinal direction of the first gas line within the gas block and supplying a second gas. The inner diameter of the first gas line may increase in an angled manner from a portion where the second gas line is connected.

[0011] The present invention further includes a gas supply pipe for supplying gas into the chamber, wherein the gas block is connected to the gas supply pipe through a connecting pipe, and the connecting pipe can be coupled at an angle relative to the gas supply pipe. More preferably, the connecting pipe is connected to the gas supply pipe at an angle in the direction in which the gas flows within the gas supply pipe, and the connecting pipe and the gas supply pipe can be coupled to each other at an angle of 30 to 60 degrees.

[0012] According to the present invention, the following effects can be achieved.

[0013] The present invention is implemented so that the pressure of gas can be increased by using a first charging tank and supplied to the injection unit, thereby making it possible to increase the injection pressure of the gas injected through the injection unit. Accordingly, when performing a processing process by injecting gas onto a stepped thin film or substrate, the present invention can improve the step coverage by increasing the injection pressure of the gas injected through the injection unit using the first charging tank.

[0014] The present invention is implemented so that a first valve can selectively open and close a first gas line between a first charging tank and a spray unit according to a pressure value measured by a sensor unit. Accordingly, the present invention can control the injection pressure of gas injected through the spray unit using the first charging tank and the first valve. Accordingly, the present invention can control the injection pressure of the gas in accordance with process conditions, thereby improving the quality of a substrate on which a processing process has been performed.

[0015] Figure 1 is a schematic diagram of a substrate processing device according to the present invention.

[0016] FIG. 2 and FIG. 3 are schematic cross-sectional side views of an injection unit that injects gas in a substrate processing device according to the present invention.

[0017] Figure 4 is a schematic plan view of a lead to which a spray unit is coupled in a substrate processing device according to the present invention.

[0018] FIG. 5 is a schematic plan view of a substrate support unit showing a first region and a second region spatially separated by a third region in a substrate processing device according to the present invention.

[0019] FIG. 6 and FIG. 7 are schematic side cross-sectional views of a gas block for explaining an embodiment of a first charging tank and a second charging tank in a gas supply device according to the present invention.

[0020] Figure 8 is a schematic block diagram of a supply unit and a gas block in a gas supply device according to the present invention.

[0021] Figure 9 is a plan view showing a state in which a gas block is connected to a gas supply pipe through a connecting pipe in a gas supply device according to the present invention.

[0022] FIG. 10 is a side view showing a state in which a plurality of gas blocks arranged in parallel are connected to a gas supply pipe through a connecting pipe in a gas supply device according to the present invention.

[0023] Hereinafter, an embodiment of a substrate processing device according to the present invention will be described in detail with reference to the attached drawings. Since a gas supply device according to the present invention can be included in a substrate processing device according to the present invention, it will be described together with the embodiment of the substrate processing device according to the present invention.

[0024] Referring to FIG. 1, a substrate processing device (1) according to the present invention performs a processing process on a substrate (100). The substrate (100) may be a silicon substrate, a glass substrate, a metal substrate, or the like. The substrate processing device (1) according to the present invention may perform a deposition process for depositing a thin film on the substrate (100), an etching process for removing a portion of the thin film deposited on the substrate (100), or the like. Hereinafter, an embodiment in which the substrate processing device (1) according to the present invention performs the deposition process will be described, but it will be apparent to those skilled in the art to which the present invention pertains to derive an embodiment in which the substrate processing device (1) according to the present invention performs other processing processes, such as the etching process, therefrom.

[0025] A substrate processing device (1) according to the present invention may include a chamber (2), a substrate support unit (3), an injection unit (4), and a supply unit (5).

[0026] Referring to FIG. 1, the chamber (2) can provide a processing space (200). In the processing space (200), a processing process for the substrate (100) can be performed. The processing space (200) can be arranged inside the chamber (2). An exhaust port (not shown) for exhausting gas from the processing space (200) can be coupled to the chamber (2). The substrate support unit (3) and the injection unit (4) can be arranged inside the chamber (2).

[0027] Referring to Fig. 1, the substrate support member (3) can support the substrate (100). The substrate support member (3) can support one substrate (100) or multiple substrates (100). When multiple substrates (100) are supported by the substrate support member (3), processing processes for multiple substrates (100) can be performed at once. The substrate support member (3) can be coupled to the chamber (2). The substrate support member (3) can be placed inside the chamber (2).

[0028] Referring to FIGS. 1 to 5, the injection unit (4) can inject gas toward the substrate support unit (3). The injection unit (4) can be connected to the supply unit (5). In this case, the injection unit (4) can inject gas supplied from the supply unit (5) toward the substrate support unit (3). The injection unit (4) can be disposed inside the chamber (2). The injection unit (4) can be disposed opposite the substrate support unit (3). The injection unit (4) can be disposed above the substrate support unit (3). The processing space (200) can be disposed between the injection unit (4) and the substrate support unit (3). The injection unit (4) can be coupled to a lid (20, illustrated in FIG. 4). The lid (20) can be coupled to the chamber (2) so as to cover an upper portion of the chamber (2).

[0029] The above injection unit (4) may include a first gas path (4a) and a second gas path (4b).

[0030] The first gas path (4a) can inject the first gas. One end of the first gas path (4a) can be connected to the supply unit (5) through a pipe, hose, block, or the like. The other end of the first gas path (4a) can be connected to the processing space (200). Accordingly, the first gas supplied from the supply unit (5) can flow along the first gas path (4a) and then be injected into the processing space (200) through the first gas path (4a). The first gas path (4a) can function as a path for the first gas to flow and also as an injection port for injecting the first gas into the processing space (200).

[0031] The second gas path (4b) can inject a second gas. The second gas and the first gas may be different gases. The first gas and the second gas may be source gases having different substances. For example, the first gas may be a source gas having zirconium (Zr), and the second gas may be a source gas having hafnium (Hf). The first gas may be a source gas, and the second gas may be a reactant gas. The first gas may be a source gas, and the second gas may be a purge gas. The first gas may be a reactant gas, and the second gas may be a purge gas. The second gas and the first gas may be the same gas. One end of the second gas path (4b) may be connected to the supply unit (5) through a pipe, a hose, a block, or the like. The second gas path (4b) may be connected to the processing space (200) at the other end. Accordingly, the second gas supplied from the supply unit (5) may flow along the second gas path (4b) and then be injected into the processing space (200) through the second gas path (4b). The second gas path (4b) may function as a path for the second gas to flow and also as an injection port for injecting the second gas into the processing space (200).

[0032] The second gas path (4b) and the first gas path (4a) may be arranged to be spatially separated from each other. Accordingly, the second gas supplied from the supply unit (5) to the second gas path (4b) may be injected into the processing space (200) without passing through the first gas path (4a). The first gas supplied from the supply unit (5) to the first gas path (4a) may be injected into the processing space (200) without passing through the second gas path (4b). The second gas path (4b) and the first gas path (4a) may inject gases toward different parts of the processing space (200).

[0033] For example, as shown in FIG. 2, the injection unit (4) may include a first plate (41) and a second plate (42).

[0034] The first plate (41) may be disposed on the upper side of the second plate (42). The first plate (41) and the second plate (42) may be disposed spaced apart from each other. A plurality of first gas holes (411) may be formed in the first plate (41). Each of the first gas holes (411) may function as a passage for the first gas to flow. The first gas holes (411) may belong to the first gas path (4a). A plurality of second gas holes (412) may be formed in the first plate (41). Each of the second gas holes (412) may function as a passage for the second gas to flow. The second gas holes (412) may belong to the second gas path (4b). A plurality of protruding members (413) may be coupled to the first plate (41). The above protruding members (413) may protrude from the lower surface of the first plate (41) toward the second plate (42). Each of the first gas holes (411) may be formed by penetrating the first plate (41) and the protruding members (413).

[0035] A plurality of openings (421) may be formed in the second plate (42). The openings (421) may be formed by penetrating the second plate (42). The openings (421) may be arranged at positions corresponding to the respective protruding members (413). As illustrated in FIG. 2, the protruding members (413) may be formed to have a length such that they are inserted into each of the openings (421). Although not illustrated, the protruding members (413) may also be formed to have a length such that they are arranged above each of the openings (421). The protruding members (413) may also be formed to have a length such that they protrude downward from the second plate (42). The second gas holes (412) may be arranged to inject gas toward the upper surface of the second plate (42). Although not shown, the lower surface of the first plate (41) may be formed flat without the protruding member (413).

[0036] For example, as illustrated in FIG. 3, a plurality of first openings (422) and a plurality of second openings (423) may be formed in the second plate (42).

[0037] The first openings (422) may be formed through the second plate (42). The second openings (423) may be formed through the second plate (42). The second plate (42) and the first plate (41) may be spaced apart from each other. The lower surface of the first plate (41) facing the second plate (42) may be formed flat without the protruding member (413, shown in FIG. 2). The first gas and the second gas may be supplied to the space between the first plate (41) and the second plate (42) through the first gas holes (411) and the second gas holes (412) and then sprayed into the processing space (200) through the first openings (422) and the second openings (423). In this case, when the supply of the first gas through the first gas holes (411) and the supply of the second gas through the second gas holes (412) are performed simultaneously, the first gas and the second gas can be mixed in the space between the first plate (41) and the second plate (42) and then sprayed into the processing space (200) through the first openings (422) and the second openings (423).

[0038] Meanwhile, the first openings (422) may be arranged vertically below each of the first gas holes (411). In this case, the first openings (422) and the first gas holes (411) may be arranged on the same vertical line. Although not shown, the first openings (422) and the first gas holes (411) may be arranged at staggered positions. In this case, the first openings (422) and the first gas holes (411) may be arranged at positions where they do not overlap each other, or may be arranged at positions where they only partially overlap each other.

[0039] Meanwhile, the second openings (423) may be arranged vertically below each of the second gas holes (412). In this case, the second openings (423) and the second gas holes (412) may be arranged on the same vertical line. Although not shown, the second openings (423) and the second gas holes (412) may be arranged at staggered positions. In this case, the second openings (423) and the second gas holes (412) may be arranged at positions where they do not overlap each other, or may be arranged at positions where they only partially overlap each other.

[0040] Meanwhile, the injection unit (4) can form plasma using the second plate (42) and the first plate (41). In this case, plasma power, such as RF power, may be applied to the first plate (41), and the second plate (42) may be grounded. The first plate (41) may be grounded, and plasma power may be applied to the second plate (42).

[0041] The above injection unit (4) may include a first injection module (43) and a second injection module (44).

[0042] The first injection module (43) can inject gas into the first region (210). The first region (210) may correspond to a part of the processing space (200). The first injection module (43) may be coupled to the lid (20). The first injection module (43) may be implemented as any one of a first embodiment having the protruding member (413) as illustrated in FIG. 2, a second embodiment in which the openings (421) are formed in the second plate (42) without the protruding member (413) as illustrated in FIG. 2, and a third embodiment in which the first openings (422) and the second openings (423) are formed in the second plate (42) as illustrated in FIG. 3. Although not illustrated, the first injection module (43) may also be implemented as a fourth embodiment in which a plurality of gas holes are formed in at least one plate. In the fourth embodiment, the first injection module (43) can be implemented as a shower head.

[0043] The second injection module (44) can inject gas into the first region (210). The second injection module (44) can be coupled to the lid (20) at a position spaced apart from the first injection module (43). The second injection module (44) and the first injection module (43) are coupled to a first housing (401), and the first housing (401) can be coupled to the lid (20). The second injection module (44) can be implemented as any one of the first to fourth embodiments. The second injection module (44) and the first injection module (43) can be implemented as the same embodiment, or can be implemented as different embodiments.

[0044] The second injection module (44) and the first injection module (43) may be connected to the supply unit (5). The second injection module (44) and the first injection module (43) may inject gas supplied from the supply unit (5) into the first region (210). The second injection module (44) and the first injection module (43) may inject the same gas. The second injection module (44) and the first injection module (43) may also inject different gases. The second injection module (44) and the first injection module (43) may form a first injection unit (40a). The first injection unit (40a) may inject a source gas into the first region (210). In this case, each of the first injection module (43) and the second injection module (44) can inject a source gas into the first region (210). A first supply unit (5a) can be connected to the first injection module (43) and the second injection module (44). The first supply unit (5a) can supply a source gas to each of the first injection module (43) and the second injection module (44).

[0045] The above injection unit (4) may include a third injection module (45) and a fourth injection module (46).

[0046] The third injection module (45) can inject gas into the second region (220). The second region (220) may correspond to a part of the processing space (200). The second region (220) and the first region (210) may be spatially separated. The third injection module (45) may be coupled to the lid (20). The third injection module (45) may be implemented as any one of the first to fourth embodiments. The third injection module (45) may be implemented as the same embodiment as at least one of the first injection module (43) and the second injection module (44), or may be implemented as an embodiment different from each of the first injection module (43) and the second injection module (44).

[0047] The fourth injection module (46) can inject gas into the second region (220). The fourth injection module (46) can be coupled to the lid (20) at a position spaced apart from the third injection module (45). The fourth injection module (46) and the third injection module (45) are coupled to the second housing (402), and the second housing (402) can be coupled to the lid (20). The fourth injection module (46) can be implemented as any one of the first to fourth embodiments. The fourth injection module (46) and the third injection module (45) can be implemented as the same embodiment, or can be implemented as different embodiments.

[0048] The fourth injection module (46) and the third injection module (45) may be connected to the supply unit (5). The fourth injection module (46) and the third injection module (45) may inject gas supplied from the supply unit (5) into the second region (220). The fourth injection module (46) and the third injection module (45) may inject the same gas. The fourth injection module (46) and the third injection module (45) may also inject different gases. The fourth injection module (46) and the third injection module (45) may form a second injection unit (40b). The second injection unit (40b) may inject a reactant gas into the second region (220). In this case, each of the third injection module (45) and the fourth injection module (46) can inject reactant gas into the second region (220). A second supply unit (5b) can be connected to the third injection module (45) and the fourth injection module (46). The second supply unit (5b) can supply reactant gas to each of the third injection module (45) and the fourth injection module (46).

[0049] The substrate processing device (1) according to the present invention may include a plurality of injection units (4). In this case, among the injection units (4), the first injection unit (40a) may inject a source gas into the first region (210). The first injection unit (40a) may include the first injection module (43) and the second injection module (44). Among the injection units (4), the second injection unit (40b) may inject a reactant gas into the second region (220). The second injection unit (40b) may include the third injection module (45) and the fourth injection module (46). Among the injection units (4), the third injection unit (40c) may inject a purge gas into the third region (230). The third region (230) may be positioned between the first region (210) and the second region (220). The third injection unit (40c) may spatially separate the first region (210) and the second region (220) by injecting purge gas into the third region (230). Accordingly, the gas injected into the first region (210) and the gas injected into the second region (220) may be prevented from mixing with each other.

[0050] In this case, the substrate (100) supported on the substrate support member (3) can sequentially pass through the first region (210), the third region (230), the second region (220), and the third region (230) by the rotation of the substrate support member (3). Accordingly, in the first region (210), an adsorption process in which the source gas is adsorbed onto the substrate (100) is performed, in the third region (230), a purge process in which the source gas that was not used in the adsorption process is purged is performed, in the second region (220), a deposition process in which a reactant gas reacts with the source gas adsorbed onto the substrate (100) to deposit a thin film is performed, and in the third region (230), a purge process in which the reactant gas that was not used in the deposition process is purged can be sequentially performed. Through this, the substrate processing device (1) according to the present invention can form a thin film on the substrate (100) by an atomic layer deposition (ALD) method. The third region (230) may include a first region (231), a second region (232), and a third region (233). By the rotation of the substrate supporter (3), the substrate (100) can move from the first region (210) through the first region (231) of the third region (230) to the second region (220). By the rotation of the substrate supporter (3), the substrate (100) can move from the second region (220) through the second region (232) of the third region (230) to the first region (210). A purge gas can be injected in the third region (233) of the third region (230). The third zone (233) may be placed between the first zone (231) and the second zone (232).

[0051] Meanwhile, the substrate support part (3) can be rotated by a rotation part (not shown). By the rotation part, the substrate support part (3) can repeat rotation and stop. When the substrate (100) is placed in the first region (210) and the second region (220), the rotation part can stop the rotation of the substrate support part (3). When the substrate (100) passes through the third region (230), the rotation part can continuously rotate the substrate support part (3) without stopping. The rotation part can also adjust the rotation speed of the substrate support part (3) without completely stopping the substrate support part (3). In this case, when the substrate (100) passes through the first region (210) and the second region (220), the rotation part can reduce the rotation speed of the substrate support part (3). When the substrate (100) passes through the third region (230), the rotating part can increase the rotation speed of the substrate support part (3).

[0052] Referring to FIGS. 1 to 6, the supply unit (5) can supply gas to the injection unit (4). One side of the supply unit (5) can be connected to the injection unit (4) using a pipe, hose, block, or the like. The supply unit (5) can be implemented as a gas supply device according to the present invention.

[0053] The above supply unit (5) may include a first storage unit (51), a second storage unit (52), a gas block (53), a pressure measuring means (54), and a first valve (55).

[0054] The first storage unit (51) can supply the first gas. The first storage unit (51) can store the first gas and supply the stored first gas to the gas block (53). The first storage unit (51) can be connected to the gas block (53) through a supply line (50). The supply line (50) can be implemented as at least one of a pipe, a hose, and a hole formed in a block.

[0055] The second storage unit (52) can supply the second gas. The second storage unit (52) can store the second gas and supply the stored second gas to the gas block (53). The second storage unit (52) can be connected to the gas block (53) through the supply line (50). When either the second storage unit (52) or the first storage unit (51) supplies gas, the other can stop supplying gas. The second storage unit (52) and the first storage unit (51) can supply gas simultaneously.

[0056] Meanwhile, a buffer (not shown) may be installed in the supply line (50). The buffer may be installed at a point where the first gas supplied from the first storage unit (51) and the second gas supplied from the second storage unit (52) meet each other. Accordingly, the first gas and the second gas may be mixed in the buffer. For example, when the first gas is a source gas containing zirconium (Zr) and the second gas is a source gas containing hafnium (Hf), the source gas containing zirconium (Zr) and the source gas containing hafnium (Hf) may be mixed in the buffer and then supplied to the connection unit (536) of the gas block (53) through the supply line (50). Accordingly, the source gas containing zirconium (Zr) and hafnium (Hf) may be supplied half to the first charging tank (531) and half to the second charging tank (533). When a valve is installed in the buffer, the first gas and the second gas can be maintained in a mixed state in the buffer. Next, when the valve is opened, the first gas and the second gas can be supplied to the connection portion (536) in a mixed state. Meanwhile, the first gas or the second gas can be supplied to the buffer, respectively. In this case, the first gas or the second gas can be supplied from the buffer to the connection portion (536), respectively.

[0057] The gas block (53) may be connected to the first storage unit (51), the second storage unit (52), and the injection unit (4). One side of the gas block (53) may be connected to the first storage unit (51) and the second storage unit (52). One side of the gas block (53) may be connected to the supply line (50) and may be connected to the first storage unit (51) and the second storage unit (52) through the supply line (50). The other side of the gas block (53) may be connected to the injection unit (4). The gas block (53) may transfer gas supplied from at least one of the first storage unit (51) and the second storage unit (52) to the injection unit (4). The gas block (53) may be implemented as a block having a plurality of holes formed therein for gas flow. The above gas block (53) may be placed on the upper side of the lid (20). The gas block (53) may be supported on the upper surface of the lid (20). The gas block (53) may include a gas passage formed therein.

[0058] Meanwhile, referring to FIGS. 1 to 6 and FIG. 8, when the supply unit (5) is implemented with the first supply unit (5a) and the second supply unit (5b), the supply unit (5) may include a plurality of gas blocks (53) correspondingly. In this case, the gas blocks (53) may include the first gas block (53a) and the second gas block (53b).

[0059] The first gas block (53a) is formed on the upper portion of the first region (210). The first gas blocks (53a) may be formed in multiple pieces and arranged in n rows. The first gas blocks (53a) may be arranged at positions corresponding to the first supply portions (5a). In this case, a plurality of the first supply portions (5a) may be arranged on the side of the first gas blocks (53a) arranged in n rows.

[0060]

[0061] The second gas block (53b) is formed on the upper portion of the second region (220). The second gas blocks (53b) may be formed in multiple pieces and arranged in m rows. The second gas blocks (53b) may be arranged at positions corresponding to the second supply units (5b). In this case, a plurality of the second supply units (5b) may be arranged on the side of the second gas blocks (53b) arranged in m rows. The number of the first supply units (5a) may be greater than the number of the second supply units (5b). In this case, the first supply units (5a) may be formed in n pieces corresponding to the n rows of the first gas blocks (53a) and arranged in n rows, and the second supply units (5b) may be formed in m pieces corresponding to the m rows of the second gas blocks (53b) and arranged in m rows. For example, the first supply section (5a) may be formed in two pieces and arranged in two rows, and the second supply section (5b) may be formed in one piece and arranged in one row.

[0062] Here, a plurality of first gas blocks (53a) arranged in n rows can be connected to a first gas supply pipe through a connecting pipe, and a plurality of second gas blocks (53b) arranged in m rows can also be connected to a second gas supply pipe through a connecting pipe, respectively.

[0063] Since the configuration in which the first gas block (53a) is connected to the first gas supply pipe and the configuration in which the second gas block (53b) is connected to the second gas supply pipe are the same, for convenience of explanation, the first gas block (53a) and the second gas block (53b) are collectively referred to as a gas block (53), and the first gas supply pipe and the second gas supply pipe are collectively referred to as a gas supply pipe (61).

[0064] FIG. 9 and FIG. 10 illustrate a state in which a gas block (53) is connected to a gas supply pipe (61) through a connecting pipe (62). FIG. 9 is a plan view, and FIG. 10 is a side view. Here, the gas supply pipe (61) is an element for supplying gas supplied from the gas block (53) to the injection unit (4) provided in the chamber (2). One end of the connecting pipe (62) is connected to the first gas line (532) or the second gas line (534) formed in the gas block (53), and the other end of the connecting pipe (62) is connected to the gas supply pipe (61). Therefore, the gas charged in the first charging tank (531) or the second charging tank (533) can be supplied to the gas supply pipe (61) through the connecting pipe (62).

[0065] A plurality of gas blocks (53) are arranged in parallel at regular intervals, and are each connected to a gas supply pipe (61) through a connecting pipe (62). It is preferable that the connecting pipe (62) be connected to the gas supply pipe (61) at an angle. Specifically, the connecting pipe (62) is connected to the gas supply pipe (61) at an angle in the direction in which gas flows within the gas supply pipe (61), and the angle (θ) between the connecting pipe (62) and the gas supply pipe (61) may be 30 to 60°, preferably 45°. When the connecting pipe (62) is vertically connected to the gas supply pipe (61), the gas supplied from the connecting pipe (62) to the gas supply pipe (61) may collide vertically with the gas flowing in the gas supply pipe (61), which may generate a vortex. The vortex may disturb the flow within the gas supply pipe (61) and cause unintended fluctuations in the amount of gas supplied to the injection unit (4). This vortex problem can be alleviated or eliminated by having the connecting pipe (62) slantedly connected to the gas supply pipe (61). In particular, when a large number of gas blocks (53) are connected to one gas supply pipe (61), this vortex problem may become particularly serious, and therefore, the angle setting of the connecting pipe (62) and the gas supply pipe (61) is important.

[0066] The gas supply device according to the present invention may include one or more charging tanks formed within the gas block (53). In this case, the gas block (53) may include a first charging tank (531).

[0067] The first charging tank (531) can store at least one of the first gas supplied from the first storage unit (51) and the second gas supplied from the second storage unit (52). In this case, the first charging tank (531) may store a gas composed solely of the first gas, a gas composed solely of the second gas, or a mixed gas in which the first gas and the second gas are mixed. The gas may be stored and accumulated in the first charging tank (531). Accordingly, the pressure of the gas stored in the first charging tank (531) increases. Therefore, the substrate processing device (1) according to the present invention can increase the pressure of the gas by using the first charging tank (531) and supply it to the injection unit (4), thereby increasing the injection pressure of the gas injected into the processing space (200) through the injection unit (4). Accordingly, when the substrate processing device (1) according to the present invention performs a processing process by spraying gas on a stepped thin film or substrate (100), the step coverage can be improved by increasing the spray pressure of the gas sprayed into the processing space (200) using the first charging tank (531). The first charging tank (531) can be implemented as a space formed by processing a groove or the like in the interior of the gas block (53). The first charging tank (531) can also be formed together with the manufacturing of the gas block (53). The first charging tank (531) can be implemented as a space having a larger volume than holes or the like formed for the flow of gas in the interior of the gas block (53).

[0068] The first charging tank (531) may be connected to the injection unit (4) via a first gas line (532). The first gas line (532) may be arranged inside the gas block (53). The first gas line (532) may be implemented as the gas path inside the gas block (53). The first gas line (532) may be connected to the rear end of the first charging tank (531) and may be connected to the chamber (2). The first gas line (532) may be implemented as a hole formed inside the gas block (53) to be connected to the first charging tank (531). A portion of the first gas line (532) may be implemented as a hole, and the remaining portion may be implemented as a pipe, a hose, or the like.

[0069] The pressure measuring means (54) can measure the pressure of the gas. The pressure measuring means (54) can be installed at least one of the inlet side of the gas block (53) and the outlet side of the gas block (53). The pressure measuring means (54) can be connected to the inlet or the outlet of the charging tank. The pressure measuring means (54) can be connected to the inlet and the outlet of the charging tank. When the pressure measuring means (54) is installed at the inlet side of the gas block (53), the pressure measuring means (54) can be installed in the supply line (50). In this case, the pressure measuring means (54) can measure the pressure of the gas existing inside the supply line (50). As the pressure increases as the gas is stored and accumulated in the first charging tank (531), the pressure of the gas existing inside the supply line (50) can also increase. Accordingly, the pressure measuring means (54) can measure the pressure of the gas stored inside the first charging tank (531) by measuring the pressure of the gas at the inlet side of the gas block (53). When the pressure measuring means (54) is installed at the outlet side of the gas block (53), the pressure measuring means (54) can be installed in the first gas line (532). In this case, the pressure measuring means (54) can measure the pressure of the gas existing inside the first gas line (532). As the pressure increases as the gas is stored and accumulated in the first charging tank (531), the pressure of the gas existing inside the first gas line (532) can also increase. Accordingly, the pressure measuring means (54) can measure the pressure of the gas stored inside the first charging tank (531) by measuring the pressure of the gas at the outlet side of the gas block (53). The pressure measuring means (54) can provide the measured pressure value to the first valve (55). The pressure measuring means (54) can provide the pressure value to the first valve (55) through wired communication, wireless communication, or the like.The above pressure measuring means (54) may include a pressure sensor for measuring the pressure of gas.

[0070] The first valve (55) can open and close the first gas line (532). The first valve (55) is installed in the first gas line (532) between the gas block (53) and the injection unit (4), thereby opening and closing the first gas line (532). The first valve (55) may be installed inside the gas block (53). The first valve (55) may be installed in a portion of the first gas line (532) that is arranged outside the gas block (53).

[0071] The first valve (55) can selectively open and close the first gas line (532) between the first charging tank (531) and the injection unit (4) according to the pressure value measured by the pressure measuring means (54). Accordingly, the substrate processing device (1) according to the present invention is implemented so as to be able to control the injection pressure of the gas injected into the processing space (200) through the injection unit (4) using the first charging tank (531) and the first valve (55). Therefore, the substrate processing device (1) according to the present invention can control the injection pressure of the gas in response to the process conditions, and thus can improve the quality of the substrate (100) on which the processing process is performed. For example, when step coverage is an important process condition, the substrate processing device (1) according to the present invention can increase the injection pressure of the gas by increasing the time for which the first valve (55) closes the first gas line (532) and thereby increasing the flow rate of the gas accumulated in the first charging tank (531). For example, when the prevention of damage to the lower film formed on the substrate (100), etc. is an important process condition, the substrate processing device (1) according to the present invention can lower the injection pressure of the gas by reducing the time for which the first valve (55) closes the first gas line (532) and thereby reducing the flow rate of the gas accumulated in the first charging tank (531).

[0072] The first valve (55) can close the first gas line (532) until the pressure value reaches a preset reference value, and open the first gas line (532) after the pressure value reaches the reference value. The reference value is a pressure value corresponding to the injection pressure of the gas according to the process conditions, and can be preset by an operator. The reference value can also be changed and set to a pressure value corresponding thereto as the process conditions change. Since the first valve (55) opens the first gas line (532) after the pressure value reaches the reference value, the substrate processing device (1) according to the present invention can further improve the accuracy of the control of the injection pressure of the gas when compared to a comparative example in which the first valve (55) opens the first valve (55) based on the time for which the first valve (55) closes the first gas line (532).

[0073] Here, the gas block (53) may include a second charging tank (533).

[0074] The second charging tank (533) can store at least one of the first gas supplied from the first storage unit (51) and the second gas supplied from the second storage unit (52). The gas can be stored and accumulated in the second charging tank (533). Accordingly, the pressure of the gas stored in the second charging tank (533) increases. Therefore, the substrate processing device (1) according to the present invention can increase the pressure of the gas by using the second charging tank (533) and supply it to the injection unit (4), thereby increasing the injection pressure of the gas injected into the processing space (200) through the injection unit (4). Accordingly, when the substrate processing device (1) according to the present invention performs a processing process by spraying gas on a stepped thin film or substrate (100), the step coverage can be improved by increasing the spray pressure of the gas sprayed into the processing space (200) using the second charging tank (533). When the supply unit (5) supplies gas to the first injection module (43) and the second injection module (44), the substrate processing device (1) according to the present invention can increase the pressure of the gas sprayed through the first injection module (43) using the first charging tank (531), and can increase the pressure of the gas sprayed through the second injection module (44) using the second charging tank (533).

[0075] The second charging tank (533) may be implemented as a space formed by processing a groove or the like into the interior of the gas block (53). The second charging tank (533) may also be formed together with the manufacturing of the gas block (53). The second charging tank (533) may be implemented as a space having a larger volume than the holes or the like formed for the flow of gas within the gas block (53).

[0076] The second charging tank (533) may be connected to the injection unit (4) via a second gas line (534). The second gas line (534) may be arranged inside the gas block (53). The second gas line (534) may be implemented as the gas path inside the gas block (53). The second gas line (534) may be connected to the rear end of the second charging tank (533) and may be connected to the chamber (2). The second gas line (534) may be implemented as a hole formed inside the gas block (53) to be connected to the second charging tank (533). A portion of the second gas line (534) may be implemented as a hole, and the remaining portion may be implemented as a pipe, a hose, or the like.

[0077] The above supply unit (5) may include a second valve (56).

[0078] The second valve (56) can open and close the second gas line (534). The second valve (56) is installed in the second gas line (534) between the gas block (53) and the injection unit (4), thereby opening and closing the second gas line (534). The second valve (56) may be installed inside the gas block (53). The second valve (56) may be installed in a portion of the second gas line (534) that is arranged outside the gas block (53).

[0079] The second valve (56) can selectively open and close the second gas line (534) between the second charging tank (533) and the injection unit (4) according to the pressure value measured by the pressure measuring means (54). Accordingly, the substrate processing device (1) according to the present invention is implemented so as to be able to control the injection pressure of the gas injected into the processing space (200) through the injection unit (4) using the second charging tank (533) and the second valve (56). Therefore, the substrate processing device (1) according to the present invention can control the injection pressure of the gas in response to the process conditions, and thus can improve the quality of the substrate (100) on which the processing process is performed.

[0080] The second valve (56) can close the second gas line (534) until the pressure value reaches the reference value, and open the second gas line (534) after the pressure value reaches the reference value. Accordingly, the substrate processing device (1) according to the present invention can further improve the accuracy of the control of the injection pressure of the gas when compared to the comparative example in which the second valve (56) is opened based on the time that the second valve (56) closes the second gas line (534).

[0081] The second valve (56) can open and close the second gas line (534) connecting the second injection module (44) and the second charging tank (533). The first valve (55) can open and close the first gas line (532) connecting the first injection module (43) and the first charging tank (531). In this case, the supply unit (5) can be implemented as the first supply unit (5a). The first supply unit (5a) can supply gas to the first injection unit (40a).

[0082] The second valve (56) can also open and close the second gas line (534) connecting the fourth injection module (46) and the second charging tank (533). The first valve (55) can open and close the first gas line (532) connecting the third injection module (45) and the first charging tank (531). In this case, the supply unit (5) can be implemented as the second supply unit (5b). The second supply unit (5b) can supply gas to the second injection unit (40b).

[0083] When the second valve (56) and the first valve (55) are provided, the pressure measuring means (54) may include a second-second pressure measuring means (5422). The second-second pressure measuring means (5422) may measure the pressure of gas flowing along the first gas line (532) or the second gas line (534). To this end, the second-second pressure measuring means (5422) may include a second-first pressure measuring means (5421) and a second-second pressure measuring means (5422).

[0084] The second -1 pressure measuring means (5421) can measure the pressure of the gas flowing along the first gas line (532). The first valve (55) can selectively open and close the first gas line (532) according to the first outlet value measured by the second -1 pressure measuring means (5421). The first valve (55) can close the first gas line (532) until the first outlet value reaches the reference value, and open the first gas line (532) after the first outlet value reaches the reference value. The second -1 pressure measuring means (5421) can be installed in the first gas line (532).

[0085] The second -2 pressure measuring means (5422) can measure the pressure of the gas flowing along the second gas line (534). The second valve (56) can selectively open and close the second gas line (534) according to the second outlet value measured by the second -2 pressure measuring means (5422). The second valve (56) can close the second gas line (534) until the second outlet value reaches the reference value, and open the second gas line (534) after the second outlet value reaches the reference value. In this case, the timing at which the second valve (56) opens the second gas line (534) and the timing at which the first valve (55) opens the first gas line (532) may be the same as or different from each other. The above-mentioned second-second pressure measuring means (5422) may be installed in the second gas line (534). Meanwhile, the second-first pressure measuring means (5421) and the second-second pressure measuring means (5422) may be implemented as pressure gauges. The substrate processing device (1) according to the present invention measures the pressure of the gas flowing along the first gas line (532) and the second gas line (534) through the second-first pressure measuring means (5421) and the second-second pressure measuring means (5422), respectively, thereby being able to measure whether the gas flowing through the first gas line (532) and the second gas line (534) flows at an accurate pressure.

[0086] When the second valve (56) and the first valve (55) are provided, the pressure measuring means (54) may include a second -1 pressure measuring means (5421).

[0087] The second -1 pressure measuring means (5421) may be installed in the supply line (50). The second -1 pressure measuring means (5421) may measure the pressure of gas flowing along the supply line (50). The first valve (55) may selectively open and close the first gas line (532) according to the inlet value measured by the second -1 pressure measuring means (5421). The first valve (55) may close the first gas line (532) until the inlet value reaches the reference value, and open the first gas line (532) after the inlet value reaches the reference value. The second valve (56) may selectively open and close the second gas line (534) according to the inlet value measured by the second -1 pressure measuring means (5421). The second valve (56) may close the second gas line (534) until the inlet value reaches the reference value, and open the second gas line (534) after the inlet value reaches the reference value. In this case, the timing at which the second valve (56) opens the second gas line (534) and the timing at which the first valve (55) opens the first gas line (532) may be the same.

[0088] Here, the substrate processing device (1) according to the present invention may include various embodiments depending on the connection relationship between the first charging tank (531) and the second charging tank (533). These embodiments will be described in detail with reference to the attached drawings.

[0089] First, referring to FIGS. 1 to 6, the gas block (53) may include a communication portion (535) and a connecting portion (536).

[0090] The above-mentioned connecting portion (535) can connect the first charging tank (531) and the second charging tank (533) to each other. The connecting portion (535) can be implemented as a hole connecting the first charging tank (531) and the second charging tank (533) inside the gas block (53). Through the connecting portion (535), the internal pressure of the first charging tank (531) and the internal pressure of the second charging tank (533) can be adjusted to be the same.

[0091] The above-mentioned connecting portion (536) can connect the above-mentioned communication portion (535) and the above-mentioned supply line (50). The above-mentioned supply line (50) can have one side connected to the first storage portion (51) and the second storage portion (52), and the other side connected to the gas block (53). The above-mentioned connecting portion (536) can transfer the gas supplied through the above-mentioned supply line (50) to the communication portion (535). The communication portion (535) can distribute the gas supplied through the above-mentioned connecting portion (536) to the first charging tank (531) and the second charging tank (533). Accordingly, the substrate processing device (1) according to the present invention can adjust the pressure of the gas accumulated in the first charging tank (531) and the pressure of the gas accumulated in the second charging tank (533) to be the same, so that the pressure of the gas injected into the processing space (200) through the first charging tank (531) and the pressure of the gas injected into the processing space (200) through the second charging tank (533) can be adjusted to be the same. Therefore, the substrate processing device (1) according to the present invention can improve the uniformity between the processing process using the gas that has passed through the first charging tank (531) and the processing space using the gas that has passed through the second charging tank (533). When the first charging tank (531) is connected to the first injection module (43) and the second charging tank (533) is connected to the second injection module (44), the substrate processing device (1) according to the present invention can improve the uniformity between the processing process using the gas injected by the first injection module (43) in the first region (210) and the processing process using the gas injected by the second injection module (44).When the first charging tank (531) is connected to the third injection module (45) and the second charging tank (533) is connected to the fourth injection module (46), the substrate processing device (1) according to the present invention can improve the uniformity between the processing process using the gas injected by the third injection module (45) in the second area (220) and the processing process using the gas injected by the fourth injection module (46).

[0092] The above-mentioned connecting portion (536) may be connected to the middle point of the communication portion (535). In this case, based on the direction in which the first charging tank (531) and the second charging tank (533) are spaced apart from each other, the connecting portion (536) may be connected to the communication portion (535) at a point where the distance from the first charging tank (531) and the distance from the second charging tank (533) are equal to each other. Accordingly, the substrate processing device (1) according to the present invention can reduce the deviation between the flow rate of gas distributed to the first charging tank (531) and the flow rate of gas distributed to the second charging tank (533) through the connecting portion (536) and the communication portion (535).

[0093] Next, referring to FIGS. 1 to 7, the gas block (53) may be formed such that the first charging tank (531) and the second charging tank (533) are formed independently of each other. In this case, the first charging tank (531) and the second charging tank (533) are not connected to each other in a communicative manner. The supply line (50) may include a first branch line (501) connected to the first charging tank (531) and a second branch line (502) connected to the second charging tank (533). The first branch line (501) and the second branch line (502) may be connected to each other and integrated, and then connected to the first storage unit (51) and the second storage unit (52). Accordingly, at least one of the first gas and the second gas may be supplied, in part, to the first charging tank (531) through the first branch line (501), and in part, to the second charging tank (533) through the second branch line (502). Therefore, the substrate processing device (1) according to the present invention can individually control the pressure of the gas accumulated in the first charging tank (531) and the pressure of the gas accumulated in the second charging tank (533) by individually controlling the timing at which the first valve (55) opens the first gas line (532) and the timing at which the second valve (56) opens the second gas line (534). In this case, the substrate processing device (1) according to the present invention may adjust the pressure of the gas accumulated in the first charging tank (531) and the pressure of the gas accumulated in the second charging tank (533) to be the same, or may adjust the pressure of the gas accumulated in the first charging tank (531) and the pressure of the gas accumulated in the second charging tank (533) to be different from each other. Accordingly, the substrate processing device (1) according to the present invention can perform the processing process corresponding to a wider variety of process conditions.When the first charging tank (531) is connected to the first injection module (43) and the second charging tank (533) is connected to the second injection module (44), the substrate processing device (1) according to the present invention can individually control the process conditions of the processing process using the gas injected by the first injection module (43) and the processing process using the gas injected by the second injection module (44) in the first region (210). When the first charging tank (531) is connected to the third injection module (45) and the second charging tank (533) is connected to the fourth injection module (46), the substrate processing device (1) according to the present invention can individually control the process conditions of the processing process using the gas injected by the third injection module (45) and the processing process using the gas injected by the fourth injection module (46) in the second region (220).

[0094] The first branch line (501) is connected to a first connection portion (536a) formed in the gas block (53) and can be connected to the first charging tank (531) through the first connection portion (536a). The second branch line (502) is connected to a second connection portion (536b) formed in the gas block (53) and can be connected to the second charging tank (533) through the second connection portion (536b).

[0095] Here, the substrate processing device (1) according to the present invention may include the first gas line (532) to supply gas to the injection unit (4) via the first charging tank (531).

[0096] Referring to FIGS. 1 to 6, the first gas line (532) may include a first tank passage (532a) and the first injection passage (532b).

[0097] The first tank passage (532a) may be connected to the first charging tank (531). One side of the first tank passage (532a) may be connected to the first charging tank (531), and the other side of the first tank passage (532a) may be connected to the first injection passage (532b). The gas stored in the first charging tank (531) may be supplied to the first injection passage (532b) through the first tank passage (532a).

[0098] The first injection passage (532b) may be connected to the injection unit (4). One side of the first injection passage (532b) may be connected to the first tank passage (532a), and the other side of the first injection passage (532b) may be connected to the injection unit (4). The other side of the first injection passage (532b) may be connected to the injection unit (4) via a pipe, a hose, a block, or the like. The first injection passage (532b) may be connected to the first injection module (43) or the third injection module (45).

[0099] A first injection unit (57) may be connected to the first injection passage (532b). The first injection unit (57) may supply an inert gas to the first injection passage (532b). Accordingly, the substrate processing device (1) according to the present invention can further increase the injection pressure of the gas injected through the injection unit (4) by using the inert gas supplied by the first injection unit (57). In addition, the substrate processing device (1) according to the present invention can remove the residual gas remaining in the first injection passage (532b) by using the inert gas supplied by the first injection unit (57) after supplying at least one of the first gas supplied from the first storage unit (51) and the second gas supplied from the second storage unit (52) through the first injection passage (532b). For example, the first injection unit (57) may supply argon (Ar).

[0100] Meanwhile, a first gas valve (not shown) may be installed at the rear end of the first charging tank (531). The rear end of the first charging tank (531) may refer to the end of the first charging tank (531) at which the first gas line (532) is arranged. In this case, the first gas valve may connect or block the rear end of the first charging tank (531) and the first gas line (532). When the first gas valve connects the first charging tank (531) and the first gas line (532), the first gas may flow from the first charging tank (531) to the first gas line (532). When the first gas valve blocks the first charging tank (531) and the first gas line (532), the first gas may accumulate in the first charging tank (531). In addition, the first gas valve may be installed at the rear end of the first charging tank (531) to connect or block the rear end of the first charging tank (531) and the first discharge line (61). In this case, the first gas valve may connect or block the first tank passage (532a) and the first discharge line (61). To this end, the first gas valve may be installed at a point where the first tank passage (532a) and the first discharge line (61) are connected.

[0101] When the first injection unit (57) is provided, the gas block (53) may include a first injection line (537).

[0102] The first injection line (537) may be connected to each of the first injection passage (532b) and the first injection unit (57). The first injection line (537) may be implemented as a hole formed inside the gas block (53) to be connected to the first injection passage (532b). One side of the first injection line (537) may be connected to the first injection passage (532b), and the other side of the first injection line (537) may be connected to the first injection unit (57). One side of the first injection line (537) may be connected to a section where the first tank passage (532a) and the first injection passage (532b) are connected. In this case, one side of the first injection line (537), the other side of the first tank passage (532a), and one side of the first injection passage (532b) can be connected.

[0103] Referring to FIGS. 1 to 6, the substrate processing device (1) according to the present invention may include a discharge line (6).

[0104] The above discharge line (6) is for discharging residual gas. The discharge line (6) may be connected to the rear end of the charging tank. The discharge line (6) may be connected to the exhaust line of the chamber (2). The discharge line (6) may include a first discharge line (61) for discharging residual gas remaining in the first tank passage (532a).

[0105] As illustrated in Fig. 6, the first discharge line (61) may be connected to the first tank passage (532a). The first discharge line (61) may be connected to the first tank passage (532a) between one side of the first tank passage (532a) connected to the first charging tank (531) and the other side of the first tank passage (532a) connected to the first injection passage (532b). The first discharge line (61) may be implemented to discharge residual gas by having the inert gas supplied from the first injection unit (57) push the remaining gas in the first tank passage (532a) to the first discharge line (61). Accordingly, the substrate processing device (1) according to the present invention can improve the uniformity of the processing process by discharging the residual gas remaining in the first tank passage (532a) through the first discharge line (61). In this case, the first gas valve can be maintained in an open state to discharge the residual gas through the first discharge line (61). Conversely, when the first gas is supplied to the first injection module (43) through the first gas line (532), the first gas valve can be maintained in a closed state to close the first discharge line (61). Meanwhile, when the residual gas is discharged through the first discharge line (61), the first injection passage (532b) can be maintained in a closed state by the first valve (55).

[0106] In this case, the substrate processing device (1) according to the present invention can be implemented to prevent the inert gas from flowing backward during the process of discharging the residual gas. To this end, as illustrated in FIG. 6, the diameter (D1) of the first injection line (537) can be formed smaller than the diameter (D2) of the first tank passage (532a). That is, the diameter (D2) of the first tank passage (532a) can be larger than the diameter (D1) of the first injection line (537). In addition, the inner diameter of the first gas line (532) can become increasingly larger in a sloped manner from the portion where the first injection line (537) is connected. For example, the inner diameter of the first gas line (532) can gradually become larger as it moves from the first injection line (537) toward the first charging tank (531). Accordingly, the first gas line (532) may have a larger inner diameter at a portion disposed on the first charging tank (531) side than at a portion disposed on the first injection line (537) side. By using this, the substrate processing device (1) according to the present invention can block the inert gas supplied from the first injection line (537) to the first tank passage (532a) from flowing back toward the first injection line (537) in order to discharge residual gas to the first discharge line (61). Therefore, the substrate processing device (1) according to the present invention can block the inert gas from flowing back toward the first injection line (537) from the first tank passage (532a) during the process of supplying the inert gas from the first injection part (57) to the first discharge line (61). In this case, the diameter difference between the first injection line (537) and the first injection passage (532b) can function like a check valve.

[0107] Here, the substrate processing device (1) according to the present invention may include the second gas line (534) to supply gas to the injection unit (4) via the second charging tank (533).

[0108] Referring to FIGS. 1 to 6, the second gas line (534) may include a second tank passage (534a) and the second injection passage (534b).

[0109] The second tank passage (534a) may be connected to the second charging tank (533). One side of the second tank passage (534a) may be connected to the second charging tank (533), and the other side of the second tank passage (534a) may be connected to the second injection passage (534b). The gas stored in the second charging tank (533) may be supplied to the second injection passage (534b) through the second tank passage (534a).

[0110] The second injection passage (534b) may be connected to the injection unit (4). One side of the second injection passage (534b) may be connected to the second tank passage (534a), and the other side of the second injection passage (534b) may be connected to the injection unit (4). The other side of the second injection passage (534b) may be connected to the injection unit (4) via a pipe, a hose, a block, or the like. The second injection passage (534b) may be connected to the second injection module (44) or the fourth injection module (46).

[0111] A second injection unit (58) may be connected to the second injection passage (534b). The second injection unit (58) may supply an inert gas to the second injection passage (534b). Accordingly, the substrate processing device (1) according to the present invention can further increase the injection pressure of the gas injected through the injection unit (4) by using the inert gas supplied by the second injection unit (58). In addition, the substrate processing device (1) according to the present invention can remove the residual gas remaining in the second injection passage (534b) by using the inert gas supplied by the second injection unit (58) after supplying at least one of the first gas supplied from the first storage unit (51) and the second gas supplied from the second storage unit (52) through the second injection passage (534b). For example, the second injection unit (58) may supply argon (Ar).

[0112] Meanwhile, a second gas valve (not shown) may be installed at the rear end of the second charging tank (533). The rear end of the second charging tank (533) may refer to the end of the second charging tank (533) at which the second gas line (534) is arranged. In this case, the second gas valve may connect or block the rear end of the second charging tank (533) and the second gas line (534). When the second gas valve connects the second charging tank (533) and the second gas line (534), the first gas may flow from the second charging tank (533) to the second gas line (534). When the second gas valve blocks the second charging tank (533) and the second gas line (534), the first gas may accumulate in the second charging tank (533). In addition, the second gas valve may be installed at the rear end of the second charging tank (533) to connect or block the rear end of the second charging tank (533) and the second discharge line (62). In this case, the second gas valve may connect or block the first tank passage (532a) and the first discharge line (61). To this end, the second gas valve may be installed at a point where the first tank passage (532a) and the first discharge line (61) are connected.

[0113] When the second injection unit (58) is provided, the gas block (53) may include a second injection line (538).

[0114] The second injection line (538) may be connected to each of the second injection passage (534b) and the second injection unit (58). The second injection line (538) may be implemented as a hole formed inside the gas block (53) to be connected to the second injection passage (534b). One side of the second injection line (538) may be connected to the second injection passage (534b), and the other side of the second injection line (538) may be connected to the second injection unit (58). One side of the second injection line (538) may be connected to a section where the second tank passage (534a) and the second injection passage (534b) are connected. In this case, one side of the second injection line (538), the other side of the second tank passage (534a), and one side of the second injection passage (534b) may be connected. The second injection line (538) may be arranged at an angle with respect to the second gas line (534). In this case, the second injection line (538) may be arranged at an angle with respect to the longitudinal direction of the second gas line (534).

[0115] Referring to FIGS. 1 to 6, the discharge line (6) may include a second discharge line (62) to discharge residual gas remaining in the second tank passage (534a).

[0116] As illustrated in Fig. 6, the second discharge line (62) may be connected to the second tank passage (534a). The second discharge line (62) may be connected to the second tank passage (534a) between one side of the second tank passage (534a) connected to the second charging tank (533) and the other side of the second tank passage (534a) connected to the second injection passage (534b). The second discharge line (62) may be implemented to discharge residual gas by having the inert gas supplied from the second injection unit (58) push the gas remaining in the second tank passage (534a) through the second discharge line (62). Accordingly, the substrate processing device (1) according to the present invention can improve the uniformity of the processing process by discharging the residual gas remaining in the second tank passage (534a) through the second discharge line (62).

[0117] In this case, the substrate processing device (1) according to the present invention can be implemented to prevent the inert gas from flowing backward during the process of discharging the residual gas. To this end, as illustrated in FIG. 6, the diameter (D3) of the second injection line (538) can be formed smaller than the diameter (D4) of the second tank passage (534a). That is, the diameter (D4) of the second tank passage (534a) can be larger than the diameter (D3) of the second injection line (538). In addition, the inner diameter of the second gas line (534) can become increasingly larger in a sloped manner from the portion where the second injection line (538) is connected. For example, the inner diameter of the second gas line (534) can gradually become larger as it moves from the second injection line (538) toward the second charging tank (533). Accordingly, the second gas line (534) may have a larger inner diameter at a portion disposed on the second charging tank (533) side than at a portion disposed on the second injection line (538) side. By using this, the substrate processing device (1) according to the present invention can block the inert gas supplied from the second injection line (538) to the second tank passage (534a) from flowing back toward the second injection line (538) in order to discharge the residual gas to the second discharge line (62). Therefore, the substrate processing device (1) according to the present invention can block the inert gas from flowing back toward the second injection line (538) from the second tank passage (534a) during the process of supplying the inert gas from the second injection part (58) to the second discharge line (62). In this case, the diameter difference between the second injection line (538) and the second injection passage (534b) can function like a check valve. In this case, the second gas valve may be kept open to discharge residual gas through the second discharge line (62).Conversely, when the second gas is supplied to the second injection module (44) through the second gas line (534), the second gas valve may be kept closed to close the second discharge line (62). Meanwhile, when the residual gas is discharged through the second discharge line (62), the second injection passage (534b) may be kept closed by the second valve (56).

[0118] The present invention described above is not limited to the above-described embodiments and the attached drawings, and it will be apparent to a person skilled in the art to which the present invention pertains that various substitutions, modifications, and changes are possible within a scope that does not depart from the technical spirit of the present invention.

Claims

1. A chamber including a processing area divided into a first area and a second area; Among the plurality of gas blocks, a first gas block of n rows formed on the upper portion of the first region; and Among the plurality of gas blocks, the second gas block of row m formed on the upper part of the second region is included, A gas supply device characterized in that the number of first supply units in the above n column is greater than the number of second supply units in the m column (n>m).

2. Further comprising a first gas supply pipe for supplying gas to the first region; and a second gas supply pipe for supplying gas to the second region, The first gas blocks of the above n rows are each connected to the first gas supply pipe through a connecting pipe, The second gas block of the above m column is each connected to the second gas supply pipe through a connecting pipe, A gas supply device characterized in that the connecting pipe is inclined with respect to the first gas block or the second gas block and is connected to the first gas block or the second gas block.

3. Gas block with gas passage formed inside; One or more charging tanks formed within the gas block; and A gas supply device including a pressure measuring means connected to the inlet or outlet or the inlet and outlet of the above charging tank.

4. Chamber; A gas block with a gas path formed inside; One or more charging tanks formed within the above gas block; A first gas line connected to the rear end of the charging tank within the gas block and connected to the chamber; and A gas supply device including a first exhaust line connected to the rear end of the charging tank within the gas block and connected to the exhaust line of the chamber.

5. Gas block containing a gas passage inside; A first gas line formed in the gas block and supplying a first gas to the gas path; and A first injection line is included that is connected to the first gas line at an angle in the longitudinal direction of the first gas line inside the gas block and supplies an inert gas. A gas supply device characterized in that the first gas line is formed in an inclined shape from the portion where the first injection line is connected.

6. In paragraph 1, A gas supply device characterized in that the number of the first supply section is 2 rows and the number of the second supply section is 1 row.

7. In paragraph 3, A first storage unit supplying the first gas; A second storage unit supplying the second gas; It includes a first valve for opening and closing a first gas line between the gas block and the injection unit of the substrate processing device, The gas block includes a first charging tank that stores at least one gas among the first gas supplied from the first storage unit and the second gas supplied from the second storage unit, A gas supply device characterized in that the first valve selectively opens and closes the first gas line between the first charging tank and the injection unit according to the pressure value measured by the pressure measuring means.

8. In paragraph 7, A gas supply device characterized in that the first valve closes the first gas line until the pressure value reaches a preset reference value, and opens the first gas line after the pressure value reaches the reference value.

9. In paragraph 7, A second valve for opening and closing a second passage between the gas block and the injection unit; and One side includes a supply line connected to the first storage unit and the second storage unit, and the other side includes a supply line connected to the gas block, The above pressure measuring means includes a first pressure measuring means installed in the supply line to measure the pressure of the gas, The above first valve selectively opens and closes the first gas line according to the inlet value measured by the first pressure measuring means, A gas supply device characterized in that the second valve selectively opens and closes the second gas line between the gas block and the injection unit according to the inlet value measured by the first pressure measuring means.

10. In paragraph 7, One side includes a supply line connected to the first storage unit and the second storage unit, and the other side includes a supply line connected to the gas block, The gas block includes a second charging tank storing at least one gas among the first gas supplied from the first storage unit and the second gas supplied from the second storage unit, a connecting portion connecting the first charging tank and the second charging tank to each other, and a connecting portion connecting the connecting portion and the supply line. A gas supply device characterized in that the above-mentioned communication unit distributes at least one of the first gas and the second gas supplied through the above-mentioned connection unit to the first charging tank and the second charging tank.

11. In paragraph 10, A gas supply device characterized in that the first valve opens and closes the first gas line connecting the first injection module of the injection unit and the first charging tank.

12. In paragraph 4, A gas supply device characterized in that the first discharge line is connected between the first tank passages connected to the first charging tank among the charging tanks.

13. In paragraph 4, A second exhaust line is included that is connected to the rear end of the charging tank within the gas block and is connected to the exhaust line of the chamber. A gas supply device characterized in that the second discharge line is connected between the second tank passages connected to the second charging tank among the charging tanks.

14. A gas block with a gas path formed inside; and Including a charging tank formed within the above gas block, A gas supply device characterized in that the charging tank includes a first charging tank and a second charging tank.

15. In paragraph 1, paragraph 4, One side is connected to a first storage unit where a first gas is stored and a second storage unit where a second gas is stored, and the other side includes a supply line connected to the gas block. The above gas block includes a connecting portion connecting the first charging tank and the second charging tank to each other, and a connecting portion connecting the connecting portion and the supply line. A gas supply device characterized in that the above-mentioned communication unit distributes at least one of the first gas and the second gas supplied through the above-mentioned connection unit to the first charging tank and the second charging tank.

16. In paragraph 5 A gas supply device characterized in that the inner diameter of the first gas line increases from the portion where the first injection line is connected.

17. In one of claims 3 to 16, Further comprising a gas supply pipe for supplying gas into the chamber, The above gas block is connected to the gas supply pipe through a connecting pipe, A gas supply device characterized in that the above connecting pipe is connected at an angle to the gas supply pipe.

18. In paragraph 17, The above connecting pipe is connected to the gas supply pipe at an angle in the direction in which the gas flows within the gas supply pipe, A gas supply device characterized in that the above connecting pipe and the above gas supply pipe form an angle of 30 to 60°.

Images