Polishing method and polishing apparatus

Abstract

A polishing apparatus and a polishing method. The polishing method comprises the following steps: placing a substrate to be polished in a polishing chamber; adding a non-chemically active and abrasive-free polishing fluid to the polishing chamber, and enabling the substrate to be immersed in the polishing fluid, such that the polishing fluid exerts a vertical fluid pressure on the surface of the substrate; moving the substrate within a plane in which the surface of the substrate is located, such that the polishing fluid performs fluid-induced cutting on a protrusion on the surface of the substrate; and keeping the polishing fluid continuously performing fluid-induced cutting on the protrusion to remove the protrusion, thereby achieving polishing of the surface of the substrate. The present invention can avoid damage to surfaces of substrates caused by polishing, thereby effectively protecting the substrates, effectively improving the polishing quality, and achieving high-precision polishing. Correspondingly, the present invention also provides a polishing apparatus.

Description

Polishing method and polishing apparatus TECHNICAL FIELD

[0001] The present application relates to the technical field of integrated circuit manufacturing, and in particular to a polishing method and a polishing apparatus. BACKGROUND

[0002] Chemical mechanical polishing (CMP) is a new technology for providing full planarization in very large scale integrated circuit (VLSI) manufacturing processes. The concept was first proposed by Monsanto in the United States in 1965. The basic principle of CMP technology is that a polishing pad is pressed against a workpiece with the workpiece surface facing downwards under a certain pressure, and a polishing liquid (a mixture of nanoscale particles, chemical oxidizing agents, and liquid) flows between the polishing pad and the workpiece. Through the relative movement of the polishing pad and the workpiece and the mechanical grinding and chemical corrosion of the abrasive particles, the material on the surface of the workpiece is removed, and a smooth surface is obtained (CN103419121B). However, the relative movement of the polishing pad and the workpiece and the mechanical grinding of the abrasive particles can easily damage the surface of the workpiece, seriously affecting the polishing quality and making it impossible to achieve high-precision polishing. Moreover, the wet cleaning and drying processes after polishing can also leave large particles, which cannot meet the requirements of high-precision processes.

[0003] Therefore, there is an urgent need for a new polishing process to achieve high-precision polishing. SUMMARY

[0004] The present application aims to provide a polishing method and a polishing apparatus to solve the technical problems of existing CMP technology, which can easily damage the workpiece, seriously affect the polishing quality, and make it impossible to achieve high-precision polishing.

[0005] To solve the above technical problems, the present application provides a polishing method, comprising:

[0006] placing a workpiece to be polished in a polishing chamber;

[0007] adding a non-chemically active and abrasive-free polishing fluid to the polishing chamber, so that the polishing fluid immerses the workpiece and exerts a vertical fluid pressure on the surface of the workpiece;

[0008] moving the workpiece in the plane in which the surface of the workpiece is located, so that the polishing fluid grinds the protrusions on the surface of the workpiece;

[0009] continuously grinding the protrusions with the polishing fluid to remove the protrusions and polish the surface of the workpiece.

[0010] The polishing method uses a non-chemically active and abrasive-free polishing fluid to immerse the substrate to be polished to generate a fluid pressure on the surface of the substrate to be polished, which is perpendicular to the surface of the substrate, and to move the substrate horizontally in the plane in which the surface of the substrate is located, and the polishing fluid generates an abrasive cutting resistance when flowing through the protrusions on the surface of the substrate during the movement of the substrate to abrade the protrusions, thereby polishing the substrate by continuously abrading the protrusions to remove the protrusions.

[0011] The polishing method uses a non-chemically active and abrasive-free polishing fluid to continuously abrade the protrusions on the surface of the substrate to polish the substrate, and does not require the rotation of a polishing pad or heavy mechanical top and bottom plates, and the non-contact polishing of the substrate is achieved by applying a uniform vertical fluid pressure on the surface of the substrate by the polishing fluid, which can effectively avoid the damage to the surface of the substrate caused by the mechanical contact pressure and mechanical grinding of abrasive particles in the traditional CMP method, thereby effectively protecting the substrate and improving the polishing quality, and high-precision polishing can be achieved.

[0012] Optionally, the polishing method further comprises the following steps:

[0013] The pressure is applied to the polishing fluid in the polishing chamber to adjust the size of the vertical fluid pressure applied by the polishing fluid on the surface of the substrate.

[0014] Optionally, the pressure in the polishing chamber in the polishing method is 100 mTorr-10 atm.

[0015] Optionally, the temperature of the polishing fluid in the polishing method is -70°C-150°C, the moving speed of the substrate is 0.1 cm / sec-10 cm / sec, and the time for the polishing fluid to continuously abrade the protrusions is not less than 10 minutes.

[0016] Optionally, the polishing method further comprises the following steps after the step of polishing the surface of the substrate: introducing a cleaning fluid to clean the substrate.

[0017] Optionally, the polishing method further comprises the following steps after the step of introducing the cleaning fluid to clean the substrate: discharging the cleaning fluid and drying the substrate.

[0018] Optionally, the polishing method further comprises the following step: periodically replacing or filtering the polishing fluid.

[0019] Optionally, the polishing fluid in the polishing method comprises any one or more of pure water, isopropyl alcohol, water vapor, organic vapor, or inert gas.

[0020] Based on the same inventive concept, the present application also provides a polishing device based on any one of the above-mentioned polishing methods, characterized in that it comprises:

[0021] A carrier container has a polishing chamber;

[0022] A liquid supply assembly is connected to the carrier container and communicates with the polishing chamber, and is configured to deliver a polishing fluid into the polishing chamber so that the polishing fluid can immerse a substrate and exert a vertical fluid pressure on a surface of the substrate.

[0023] A support member is disposed at least partially in the carrier container and is configured to support and fix the substrate, and the support member is configured to move the substrate in a plane in which the surface of the substrate is located.

[0024] In one embodiment, a pressure controller is disposed on the carrier container and is configured to exert a pressure on the polishing fluid to adjust a magnitude of the vertical fluid pressure exerted by the polishing fluid on the surface of the substrate to be polished.

[0025] In one embodiment, the support member includes a support frame and a driving member, the support frame is disposed in the carrier container, and the driving member is connected to the support frame and is configured to provide a driving force to the support frame to rotate the support frame.

[0026] Alternatively,

[0027] The support member includes a support frame, a magnet, a guide rail, and a coil, the support frame and the guide rail are both disposed in the carrier container, the guide rail is connected to the carrier container, the coil is disposed on the guide rail, the magnet is disposed on the support frame, and a repulsive force is generated between the magnet and a magnetic field generated by the coil to enable the support frame to move in suspension relative to the guide rail.

[0028] In one embodiment, the support frame abuts against side edges of the substrate to fix the substrate.

[0029] Alternatively,

[0030] The support frame abuts against side edges of the substrate and is attached to a side surface of the substrate to fix the substrate.

[0031] In one embodiment, the polishing device further includes:

[0032] A liquid discharge assembly is connected to the carrier container and communicates with the polishing chamber, and is configured to discharge the polishing fluid in the polishing chamber.

[0033] Alternatively,

[0034] The liquid discharge assembly and a filter assembly, the liquid discharge assembly is connected to the carrier container and communicates with the polishing chamber, and is configured to discharge the polishing fluid in the polishing chamber, and the filter assembly is connected to the liquid discharge assembly and is configured to filter and clean the polishing fluid discharged by the liquid discharge assembly.

[0035] In one embodiment, the polishing device further includes a controller, the controller is electrically connected to the liquid supply assembly, the liquid discharge assembly, the filter assembly, the pressure controller, and the support member, respectively.

[0036] In one embodiment, the carrier container comprises a bottom plate, a side plate and a top plate, the side plate and the bottom plate are connected to form a polishing chamber, the top plate and the side plate are detachably connected, and the bottom plate has a protrusion extending from the surface of the bottom plate into the polishing chamber.

[0037] The polishing device described above is used to implement the polishing method described above, and the polishing device implements non-contact polishing of the substrate by applying uniform vertical fluid pressure on the surface of the substrate through a non-chemically active and abrasive-free polishing fluid, without the need for polishing pads or heavy mechanical rotation of the top plate and the bottom plate, which can effectively avoid damage to the surface of the substrate caused by mechanical contact pressure and mechanical grinding of abrasive particles in the traditional CMP method, thereby effectively protecting the substrate, improving the polishing quality, and achieving high-precision polishing. Further, after polishing is completed using the polishing device described above, the substrate can be further cleaned and dried, so that the substrate is polished, cleaned and dried in the same chamber, the entire polishing and cleaning operation of the substrate is completed, the equipment cost can be effectively saved, the process flow can be simplified, and the polishing efficiency can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0038] FIG. 1 is a structural schematic diagram of a polishing device according to one embodiment;

[0039] FIG. 2 is a structural schematic diagram of a polishing device according to another embodiment;

[0040] FIG. 3 is a flowchart of a polishing method according to one embodiment.

[0041] BRIEF DESCRIPTION OF DRAWINGS

[0042] 10-carrier container, 11-polishing chamber, 12-top plate, 13-bottom plate, 14-side plate, 20-boosting pump, 21-drainage assembly, 31-pressure controller, 32-polishing fluid, 33-substrate, 40-supporting member, 34-bracket, 35-magnet, 36-coil, 37-guide rail, 38-driving member. DETAILED DESCRIPTION

[0043] In the following description, numerous specific details are given to provide a thorough understanding of the application. However, it will be apparent that the application can be practiced without one or more of the specific details presented. In other instances, well-known structures are not described in order to avoid obscuring the present application. It should be understood that the application can be practiced with different arrangements of components and elements than those shown or described here. On the other hand, the application is to be considered as not limited to the embodiments presented here. Rather, the application is to cover all modifications, equivalents, and alternatives falling within the scope of the application. Throughout this application, the same reference numerals are used to designate like elements except when the context clearly indicates otherwise. Where a layer is said to be formed on another layer, it can be directly formed on the other layer or intervening films can be present therebetween. Where the terms "upper", "lower", "front", "back", etc. are used, they are intended to indicate the orientation or position of the device or element being referred to, as shown in the drawings, and are used for convenience of description and simplification of description only, and are not intended to indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be interpreted as limiting the present application. Where "longitudinal" is understood as a direction perpendicular to the surface of the substrate, and "lateral" is understood as a direction parallel to the surface of the substrate. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. The terms "same", "equal" and "identical" include the meaning of exactly the same and exactly identical, and can also include the meaning of approximately the same or approximately identical within an allowable process error. The terms "first", "second", etc. as used in the description are used for differentiating between similar elements, and do not necessarily indicate a particular order or time sequence. It will be understood that these terms are used in this way for the purpose of the present application, and that these terms can be replaced by other terms, for example, to enable the embodiments of the present application described herein to be operated in a different order from that described or shown herein. Similarly, if a method described herein includes a series of steps, and the order of these steps is presented herein, this order is not necessarily the only order in which these steps can be performed, and some of the steps described herein can be omitted and / or other steps not described herein can be added to the method. If a component in one drawing is the same as a component in another drawing, although these components can be easily recognized in all the drawings, the present specification will not label all the same components with the same reference numerals in each drawing for the purpose of making the description of the drawings clearer.

[0044] The present application will be more fully understood from the following detailed description taken in connection with the accompanying drawings, presented herein for purposes of illustration only and not limitation.

[0045] The present application provides a polishing method and a polishing device, which can reduce surface damage of a substrate and achieve high-quality polishing of the substrate surface. The device and method can be used for polishing various substrates in a semiconductor manufacturing process, such as a quartz glass substrate, a soda lime substrate, a borosilicate substrate, an aluminum silicate substrate, a silicon substrate, a silicon carbide substrate, or any substrate known to those skilled in the art for carrying components of a semiconductor integrated circuit, which can be a die, a wafer processed by an epitaxial growth process, a circuit layer having a device formed thereon, or other semiconductor thin films. For example, a gallium nitride thin film, a silicon-on-insulator (SOI) substrate, a bulk silicon substrate, a germanium substrate, a germanium-silicon substrate, an indium phosphide (InP) substrate, a gallium arsenide (GaAs) substrate, or a germanium-on-insulator substrate, etc. are not limited in shape and can be square or circular, etc.

[0046] Referring to FIG. 1, a polishing device includes a carrier container 10, a liquid supply assembly, and a support 40. The carrier container 10 has a polishing chamber 11 for accommodating a substrate 33 to be polished. The liquid supply assembly is connected to the carrier container 10 and communicates with the polishing chamber 11, and is used to transmit a polishing fluid 32 to the polishing chamber 11 so that the polishing fluid 32 immerses the substrate 33, thereby allowing the polishing fluid 32 to exert a vertical fluid pressure on the surface of the substrate 33. The support 40 is at least partially disposed in the carrier container 10 and is used to support and fix the substrate 33. The support 40 is configured to be capable of moving the substrate 33 in a plane in which the surface of the substrate 33 is located.

[0047] Specifically, the polishing fluid 32 is a non-chemically active and abrasive-free gas or liquid, which can include, but is not limited to, any one or more of pure water, isopropyl alcohol, water vapor, organic vapor, or inert gas.

[0048] The polishing device described above uses a non-chemically active and abrasive-free polishing fluid 32 to continuously polish the substrate 33 by cutting the protrusions on the surface of the substrate 33. The polishing device does not require a polishing pad or the rotation of heavy mechanical top and bottom plates. The polishing device achieves non-contact polishing of the substrate 33 by exerting uniform vertical fluid pressure on the surface of the substrate 33 by the polishing fluid 32, which can effectively avoid damage to the surface of the substrate 33 caused by mechanical contact pressure and mechanical grinding of abrasive particles in the traditional CMP method. Therefore, the polishing device can effectively protect the substrate 33, improve the polishing quality, and achieve high-precision polishing.

[0049] In one embodiment, the carrier container 10 is in a shape of a circle, a square or the like, or any shape known to those skilled in the art that can accommodate the substrate 33 for polishing. Specifically, the carrier container 10 includes a top plate 12, a side plate 14 and a bottom plate 13, the side plate 14 and the bottom plate 13 are connected to form a polishing chamber 11, and the top plate 12 and the side plate 14 are detachably connected. Specifically, before polishing, the top plate 12 is opened, the substrate 33 to be polished is fixedly placed on the support 34 of the support member 40, during polishing, the top plate 12 is closed to form a closed space with the side plate 14 for polishing, after polishing, cleaning and drying are completed, the top plate 12 is opened, and the substrate 33 is taken out.

[0050] In one embodiment, a liquid supply assembly is arranged on the carrier container 10, the liquid supply assembly is connected to the carrier container 10 and communicates with the polishing chamber 11, and the liquid supply assembly is used to transmit the polishing fluid 32 into the polishing chamber 11. Specifically, the liquid supply assembly includes a storage tank (not shown in the figure) for storing the polishing fluid 32 and a liquid supply pump 20 arranged on the top plate 12, the liquid supply pump 20 communicates with the storage tank and the polishing chamber 11 through a liquid supply pipeline to pump the polishing fluid 32 in the storage tank into the polishing chamber 11. In this embodiment, the liquid supply pump 20 is arranged on the top plate 12, which can make full use of the installation space above the top plate 12, and is beneficial to save the equipment installation space. However, it should be noted that in other embodiments, the liquid supply pump 20 can also be arranged on the side plate 14 or the bottom plate 13, and the present embodiment is not limited in particular.

[0051] In one embodiment, the polishing device further includes a pressure controller 31 arranged on the carrier container, which is used to apply pressure to the polishing fluid 32 to adjust the size of the vertical fluid pressure exerted by the polishing fluid 32 on the surface of the substrate 33 to be polished. Specifically, the pressure controller 31 can control the pressure in the polishing chamber to be in the range of 100 mTorr~10 atm. Generally, the higher the pressure in the polishing chamber 11, the greater the vertical fluid pressure on the surface of the substrate 33, and the faster the polishing speed. The appropriate pressure range in the polishing chamber 11 can be selected according to the actual polishing requirements. In one embodiment, the pressure range of the high-pressure mode is 2~10 atm, which is more suitable for rough polishing, and the pressure range of the low-pressure mode is 100 mTorr~2 atm, which is more suitable for high-precision polishing.

[0052] In one embodiment, the pressure controller 31 can be a hydraulic pump, a pneumatic cylinder or a motor, and the pressure controller 31 is connected to the top plate 12 to provide a driving force for the top plate 12 to move up and down in the vertical direction. Specifically, in this embodiment, the polishing fluid 32 in the polishing chamber 11 is pressed by the top plate 12, and the pressure controller 31 drives the top plate 12 to move up and down in the vertical direction to adjust the pressure applied by the top plate 12 to the polishing fluid 32. When the top plate 12 moves downward, the pressure in the polishing chamber 11 increases, and the pressure applied by the top plate 12 to the polishing fluid 32 increases, thereby increasing the vertical fluid pressure applied by the polishing fluid 32 to the surface of the substrate 33. When the top plate 12 moves upward, the pressure in the polishing chamber 11 decreases, and the pressure applied by the top plate 12 to the polishing fluid 32 decreases, thereby decreasing the vertical fluid pressure applied by the polishing fluid 32 to the surface of the substrate 33.

[0053] Further, in another embodiment, the pressure controller 31 can also be a gas pressure regulator, and the pressure controller 31 is arranged on the top plate 12. The pressure controller 31 is used to input gas into the polishing chamber 11 and adjust the pressure of the input gas to adjust the size of the vertical fluid pressure applied by the polishing fluid 32 to the surface of the substrate 33 to be polished. In this embodiment, the size of the vertical fluid pressure applied by the polishing fluid 32 to the surface of the substrate 33 is adjusted by inputting gas into the polishing chamber 11 to press the polishing fluid 32, and adjusting the pressure of the input gas by the pressure controller 31 to adjust the size of the vertical fluid pressure applied by the polishing fluid 32 to the surface of the substrate 33. The gas is uniformly distributed in the polishing chamber 11, so that the pressure applied by the gas to the polishing fluid 32 is uniformly distributed, thereby enabling the surface of the substrate 33 in the polishing fluid 32 to be subjected to uniform vertical fluid pressure, avoiding local damage to the substrate 33 caused by uneven pressure distribution, reducing defects of the substrate 33, and improving polishing quality.

[0054] In this embodiment, the gas input into the polishing chamber can be the same substance as the polishing fluid 32, or a different substance from the polishing fluid 32. To avoid pollution and reduce polishing defects, the gas input into the polishing chamber 11 is a gas that does not chemically react with the polishing fluid 32. Further, as described in the above embodiments, the polishing fluid 32 can be a gas or a liquid. When the polishing fluid 32 is a gas, the pressurized gas and the polishing fluid 32 are preferably the same kind of gas.

[0055] In one embodiment, the support includes a bracket 34, a magnet 35, a guide rail 37 and a coil 36. The bracket 34 and the guide rail 37 are arranged in the carrier container 10, the guide rail 37 is connected to the carrier container 10, the coil 36 is arranged on the guide rail 37, and the magnet 35 is arranged on the bracket 34. The magnetic field between the magnet and the coil generates a repulsive force to enable the bracket to move in suspension relative to the guide rail.

[0056] Specifically, the coil 36 is powered to generate a magnetic field, and a repulsive force is generated between the magnetic field and the magnet 35, so that the bracket 34 is suspended relative to the guide rail 37. By changing the magnetic pole of the magnetic field generated by the coil 36, the bracket 34 can be continuously pushed to move suspended relative to the guide rail 37. The movement of the bracket 34 drives the substrate 33 on the bracket 34 to move suspended in the plane in which the substrate surface is located, so that the polishing fluid 32 generates a grinding resistance on the protrusions on the surface of the substrate 33. By continuous grinding, the protrusion part is ground and removed, thereby polishing the substrate 33. The support 40 of the present embodiment adopts a magnetic suspension structure, the bracket 34 moves suspended relative to the guide rail 37, and the bracket 34 does not contact the guide rail 37. Therefore, the generation of particles due to device friction can be avoided, the generation of particles during movement can be effectively reduced, the generation of defects during polishing can be reduced, and the polishing precision can be improved. Further, the coil 36 generates a magnetic field, and the size of the input current can be adjusted to adjust the magnetic field strength used to push the bracket 34 to move. Therefore, the movement speed of the bracket 34 can be controlled by controlling the size of the input current.

[0057] Further, the guide rail 37 is circular in shape, including but not limited to a regular circle or an ellipse, etc. The bracket 34 drives the substrate 33 located thereon to move in the same direction (counterclockwise or clockwise) along the circumference of the guide rail 37. The bracket 34 drives the substrate 33 to move counterclockwise or clockwise along the circular guide rail 37 until the polishing is completed. In the present embodiment, the bracket 34 drives the substrate 33 to continuously move in the same direction, and the moving direction of the substrate 33 does not need to be changed during polishing. Therefore, the polishing fluid 32 can be prevented from being disturbed due to the change of the moving direction, and the polishing effect can be improved, thereby improving the polishing quality.

[0058] Specifically, the moving speed of the substrate 33 is 0.1 cm / sec to 10 cm / sec. Generally, the faster the moving speed of the substrate 33, the faster the polishing speed. The moving speed of the substrate 33 can be selected according to the actual polishing requirement. In one embodiment, when high-precision polishing is required, a smaller moving speed of the substrate 33 is selected, and the moving speed is preferably 0.1 cm / sec to 2 cm / sec. When rough polishing is required, a larger moving speed of the substrate 33 is selected, and the moving speed is preferably 2 cm / sec to 10 cm / sec.

[0059] In the above embodiment, the number of brackets 34 is one. However, it should be noted that in other embodiments, the number of brackets 34 can also be multiple. Each bracket 34 is provided with a magnet 35, and 2 or more brackets 34 move suspended relative to the guide rail 37, and adjacent brackets 34 are arranged at intervals. The arrangement of multiple brackets 34 can realize the simultaneous polishing of multiple substrates 33, and can effectively improve the polishing efficiency.

[0060] In one embodiment, the bottom plate 13 has protrusions extending into the polishing chamber 11 from the surface of the bottom plate 13. In this embodiment, the protrusions extending into the polishing chamber 11 from the surface of the bottom plate 13 are arranged on the bottom plate 13 to fill part of the space in the polishing chamber 11, so that the polishing fluid 32 can be saved and the polishing cost can be reduced.

[0061] Further, in one embodiment, to avoid the protrusions interfering with the movement of the substrate 33, the protrusions are preferably arranged in the inner side region of the guide rail 37 and are spaced apart from the support 40. Specifically, in the middle region of the bottom plate 13 on the inner side of the guide rail 37, the upper surface of the bottom plate 13 extends into the polishing chamber 11 to form protrusions, and the protrusions are spaced apart from the support 40, so that the protrusions do not interfere with the support 40 and do not affect the movement of the substrate 33 in the plane of the substrate 33, ensuring smooth movement of the substrate 33.

[0062] In one embodiment, the polishing device further comprises a liquid discharge assembly 21 connected to the carrier container 10 and communicating with the polishing chamber 11, for discharging the polishing fluid 32 in the polishing chamber 11. Since the substrate 33 is polished by the abrasive cutting action of the polishing fluid 32, the protrusions removed by the abrasive cutting action can exist in the polishing fluid 32 in the form of tiny particles, which can affect the subsequent continuous abrasive cutting and cause damage to the substrate 33 if not discharged. In this embodiment, the liquid discharge assembly 21 is arranged to discharge the polishing fluid 32, so that the polishing fluid 32 can be replaced to remove the tiny particles in the polishing fluid 32, and then the liquid supply assembly can be used to input new polishing fluid 32, thereby effectively avoiding damage to the substrate 33. Preferably, the liquid discharge assembly 21 can be used to discharge the polishing fluid 32 while the liquid supply assembly is used to input new polishing fluid 32 during the polishing process, to ensure that the polishing process continues effectively. Further preferably, to further save the polishing cost, the liquid discharge assembly 21 can be used to periodically replace the polishing fluid 32 at a predetermined interval.

[0063] In another embodiment, the polishing apparatus further comprises a liquid discharge assembly 21 connected to the holding container 10 and communicating with the polishing chamber 11 for discharging the polishing fluid 32 in the polishing chamber 11, and a filtering assembly (not shown in the figure) which can comprise a filter connected to the liquid discharge assembly 21 for filtering and cleaning the polishing fluid 32 discharged by the liquid discharge assembly 21. Since the substrate 33 is polished by the abrasive cutting of the polishing fluid 32, the surface protrusions are removed by the abrasive cutting during the polishing process, and the removed protrusions can exist in the polishing fluid 32 in the form of tiny particles, which can affect the subsequent continuous abrasive cutting and cause damage to the substrate 33 if not discharged. The embodiment sets the liquid discharge assembly 21 and the filtering assembly to discharge and filter the polishing fluid 32, which can replace the polishing fluid 32 to remove the tiny particles in the polishing fluid 32, and filter and clean the waste polishing fluid 32 so that the waste polishing fluid 32 can be reused, which can effectively avoid damage to the substrate 33 and save polishing costs. Preferably, the polishing fluid 32 can be discharged by the liquid discharge assembly 21 and filtered by the filtering assembly during the polishing process, and new polishing fluid 32 can be input by the liquid supply assembly to ensure the continuous and effective polishing process. Further preferably, to further save polishing costs, the polishing fluid 32 can be periodically filtered and replaced at a preset time interval.

[0064] In one embodiment, the polishing fluid 32 continuously abrasive cuts the surface protrusions of the substrate 33 for no less than 10 minutes, and the time of the polishing fluid 32 continuously abrasive cutting the surface protrusions of the substrate 33 can be selected according to actual polishing requirements. When the substrate 33 is rough polished, the time of the polishing fluid 32 continuously abrasive cutting the surface protrusions of the substrate 33 is preferably 10 minutes to 5 hours; when the substrate 33 is high-precision polished, the time of the polishing fluid 32 continuously abrasive cutting the surface protrusions of the substrate 33 is preferably more than 1 hour.

[0065] Further, after the polishing is completed by using the above-mentioned polishing apparatus, the substrate 33 can be further cleaned and dried. Specifically, after the polishing fluid 21 is discharged by the liquid discharge assembly 21, a cleaning fluid is input by the liquid supply assembly to clean the substrate 33. After the cleaning is completed, the cleaning fluid is discharged by the liquid discharge assembly 21, and a drying gas is input by the liquid supply assembly to dry the substrate. The polishing, cleaning and drying of the substrate 33 are realized in the same chamber, the whole polishing and cleaning operation of the substrate 33 is completed, which can effectively save equipment costs, simplify the process flow, and improve the polishing efficiency.

[0066] In one embodiment, the polishing device further comprises a controller electrically connected with the liquid discharging assembly 21, the liquid supplying assembly, the pressure controller 31 and the support 40 respectively. Specifically, the controller controls the liquid supplying assembly to input the polishing fluid 32 into the polishing chamber 11, and stops the input of the polishing fluid 21 after the polishing fluid 32 immerses the substrate 33; the controller controls the pressure controller 31 to apply pressure to the polishing chamber 11 to adjust the magnitude of the vertical fluid pressure on the surface of the substrate 33 in the polishing fluid 32; after the desired magnitude of the vertical fluid pressure is reached, the controller controls the support 40 to continuously move the substrate 33 in the plane on which the surface of the substrate 33 is located to complete the polishing. Further, after the polishing is completed, the controller controls the liquid discharging assembly 21 to discharge the polishing fluid 32, and then the controller controls the liquid supplying assembly to input a cleaning fluid to clean the substrate 33; after the cleaning of the substrate 33 is completed, the controller controls the liquid discharging assembly 21 to discharge the cleaning fluid, and then the controller controls the liquid supplying assembly to input a drying gas to dry the substrate 33. In this embodiment, the controller is provided to realize automatic polishing, cleaning and drying control, which is beneficial to improving the polishing efficiency.

[0067] Further, during the polishing process, the controller periodically controls the liquid discharging assembly 21 and the liquid supplying assembly to discharge waste liquid and supplement new polishing fluid 32. The controller controls the liquid discharging assembly 21 to discharge the polishing fluid 32 with small particles, while the liquid supplying assembly inputs new polishing fluid 32. Further, the controller controls the filtering assembly to filter and clean the polishing fluid 32 discharged by the liquid discharging assembly 21, so that the cleaned polishing fluid can be recycled and reused.

[0068] In one embodiment, the bracket 34 abuts against the side edges of the substrate 33 to fix the substrate 33. Specifically, the bracket 34 is provided with a plurality of support feet at intervals, and each support foot abuts against the edge of each side of the substrate 33 to fix the substrate 33. In this embodiment, the bracket 34 only abuts against the side edges of the substrate 33, and both side surfaces of the substrate 33 can be exposed to the polishing fluid 32, so that the polishing of both sides of the substrate 33 can be simultaneously performed to realize double-sided polishing. Preferably, the material of the bracket 34 is polytetrafluoroethylene, which has excellent chemical stability, mechanical toughness, high temperature resistance and low temperature resistance. The use of polytetrafluoroethylene as the material of the bracket 34 has high stability and will not produce particles and other impurities due to abrasion, thereby affecting the polishing effect.

[0069] In another embodiment, the bracket 34 abuts against the side edges of the substrate 33 and is attached to one side of the substrate 33 to fix the substrate 33. Specifically, the bracket 34 is provided with a plurality of supporting legs at intervals, each of which abuts against the edge of each side of the substrate 33 to fix the substrate 33, and the bracket 34 is attached to one side of the substrate 33. In this embodiment, only one side of the substrate 33 is exposed to the polishing fluid 34, and the substrate 33 can be polished on one side. Preferably, the material of the bracket 34 is polytetrafluoroethylene, which has excellent chemical stability, mechanical toughness, high-temperature resistance and low-temperature resistance. The use of polytetrafluoroethylene as the material of the bracket 34 has high stability and will not produce particles and other impurities due to wear, thereby affecting the polishing effect.

[0070] Specifically, the specific working process of the above polishing device is as follows:

[0071] First, open the top plate 12, place the substrate 33 to be polished on the bracket 34 of the supporting member 40, and fix the substrate 33 to the bracket 34. Then, cover the top plate 12. In the sealed polishing chamber 11, the controller controls the liquid supply assembly to input the polishing fluid 32 into the polishing chamber 11. After the polishing fluid 32 immerses the substrate 33, the input of the polishing fluid 32 is stopped. After the polishing fluid 32 immerses the substrate 33, the polishing fluid 32 generates a vertical fluid pressure on the surface of the substrate 33. Then, the controller adjusts the pressure of the polishing fluid 32 by controlling the pressure controller 31, thereby controlling the size of the vertical fluid pressure on the surface of the substrate 33 in the polishing fluid 32. When the required vertical fluid pressure is reached, the controller controls the supporting member 40 to move in the plane where the surface of the substrate 33 is located. During the movement of the substrate 33, the polishing fluid 32 generates a grinding resistance when flowing through the protrusions on the surface of the substrate 33 to grind the protrusions. By continuous grinding, the protrusions are removed and flattened, thereby polishing the substrate 33.

[0072] Further, during the above polishing process, the controller controls the liquid supply assembly 21 and the liquid supply assembly to work simultaneously. The controller controls the liquid supply assembly 21 to discharge the polishing fluid 32, and controls the liquid supply assembly to input clean polishing fluid 32, so that the tiny particles removed by grinding the protrusions on the surface of the substrate 33 during the polishing process can be discharged as soon as possible, thereby reducing the polishing defects.

[0073] Furthermore, the controller controls the filtering assembly to filter and clean the polishing fluid 32 discharged by the liquid discharge assembly 21, so that the cleaned polishing fluid 32 can be recycled and reused, thereby saving the polishing cost.

[0074] Further, after the polishing is completed, the controller controls the liquid discharging assembly 21 to discharge the polishing fluid 32 from the polishing chamber 11, then the controller controls the liquid supplying assembly to input the cleaning fluid 32 into the polishing chamber 11 to clean the substrate 32, after the cleaning of the substrate 32 is completed, the controller controls the liquid discharging assembly 21 to discharge the cleaning fluid from the polishing chamber 11, then the controller controls the liquid supplying assembly to input the drying gas into the polishing chamber to dry the substrate 32, the polishing, cleaning and drying processes are completed in the same polishing chamber 11, finally the top plate 12 is opened, and the substrate 33 which has completed the polishing, cleaning and drying is taken out.

[0075] As shown in Fig. 2, in another embodiment, the support member includes a support frame 34 and a driving member 38, wherein the support frame 34 is arranged in the bearing container 10, and the driving member 38 is connected with the support frame 34, and the driving member 38 provides driving force to the support frame 34 to drive the support frame 34 to rotate. Specifically, the driving member 38 can be but is not limited to a rotary motor, the driving member 38 drives the support frame 34 to rotate, so that the support frame 34 drives the substrate 33 located thereon to rotate in the plane where the surface of the substrate 33 is located, so that the polishing fluid 32 generates grinding resistance on the protrusions of the surface of the substrate 33, and the protrusions are removed by continuous grinding to be ground flat, thereby polishing the substrate 33.

[0076] Further, in the embodiment, the bottom plate 13 has protrusions which are formed by extending from the surface of the bottom plate 13 into the polishing chamber 11. Specifically, to avoid the protrusions from interfering with the movement of the substrate 33, the protrusions are located outside the driving member 38, and the protrusions are arranged separately from the driving member 38 and the support frame 34. In the embodiment, the protrusions arranged on the bottom plate 13 can fill part of the space in the polishing chamber 11, so that the polishing fluid 32 can be saved in the part of the space filled by the protrusions, thereby effectively saving the polishing fluid 32 and reducing the polishing cost.

[0077] In the above embodiment, the number of the substrates 33 is one, but it should be noted that in other embodiments, the number of the substrates 33 can also be multiple, and two or more substrates 33 are arranged on the support frame 34, and the adjacent substrates 33 are arranged separately. Arranging multiple substrates 33 can realize the simultaneous polishing of multiple substrates 33, thereby effectively improving the polishing efficiency.

[0078] As described above, the difference between the embodiment and the above-mentioned embodiments is only the structure of the support member 40 and the arrangement position of the protrusions, and the other structural components and working processes are the same, which will not be described here.

[0079] On the other hand, the present application also provides a polishing method, characterized in that it comprises the following steps:

[0080] Step S1: placing a substrate to be polished in a polishing chamber.

[0081] Specifically, the top plate 12 is opened, the substrate 33 to be polished is placed on the support 34 of the support 40 in the polishing chamber 11, after the substrate 33 is placed, the top plate 12 is closed, and then step S2 is performed.

[0082] Step S2: adding a non-chemically active and abrasive-free polishing fluid into the polishing chamber, and immersing the polishing fluid into the substrate to make the polishing fluid exert a vertical fluid pressure on the surface of the substrate.

[0083] Specifically, the polishing fluid 32 is transmitted into the polishing chamber 11 by the liquid supply assembly controlled by the controller, after the polishing fluid 32 is immersed into the substrate 33, the input of the polishing fluid 32 is stopped, the polishing fluid 32 is immersed into the substrate 33, so that the polishing fluid 32 exerts a vertical fluid pressure on the surface of the substrate 33, and then step S3 is performed.

[0084] Step S3: moving the substrate in the plane where the surface of the substrate is located to make the polishing fluid grind and cut the protrusions on the surface of the substrate.

[0085] Specifically, the support 40 is controlled to move the substrate 33 in the plane where the surface of the substrate 33 is located, so that the polishing fluid 32 exerts a grinding and cutting resistance on the protrusions on the surface of the substrate 33, and then step S4 is performed.

[0086] Step S4: keeping the polishing fluid to continuously grind and cut the protrusions to remove the protrusions and polish the surface of the substrate.

[0087] Specifically, the time for the polishing fluid 32 to continuously grind and cut the protrusions on the surface of the substrate 33 can be selected according to actual polishing requirements. In an embodiment, the time for the polishing fluid 32 to continuously grind and cut the protrusions is not less than 10 minutes. Preferably, when the substrate 33 is coarsely polished, the time for the polishing fluid 32 to continuously grind and cut the protrusions on the surface of the substrate 33 is preferably 10 minutes to 5 hours; when the substrate 33 is finely polished, the time for the polishing fluid 32 to continuously grind and cut the protrusions on the surface of the substrate 33 is preferably more than 1 hour.

[0088] The above polishing method uses a non-chemically active and abrasive-free polishing fluid 32, the polishing fluid 32 is immersed into the substrate 33 to be polished to exert a fluid pressure on the surface of the substrate 33 which is perpendicular to the surface of the substrate 33, and the substrate 33 is moved horizontally in the plane where the surface of the substrate 33 is located, during the movement of the substrate 33, the polishing fluid 32 flows through the protrusions on the surface of the substrate 33 to generate a grinding and cutting resistance to grind and cut the protrusions, the protrusions are ground and cut continuously to be flattened to remove the protrusions, thereby polishing the substrate 33.

[0089] In an embodiment, after step S2, the following steps are further included:

[0090] A pressure is applied to the polishing fluid in the polishing chamber to adjust a magnitude of the vertical fluid pressure exerted by the polishing fluid on the surface of the substrate.

[0091] Specifically, the pressure controller 31 applies a pressure to the polishing fluid 32 to adjust a magnitude of the vertical fluid pressure exerted by the polishing fluid 32 on the surface of the substrate 33 to be polished. In one embodiment, the pressure controller 31 can control the pressure in the polishing chamber 11 to be in a range of 100 mTorr to 10 atm. Generally, the higher the pressure in the polishing chamber 11, the greater the vertical fluid pressure on the surface of the substrate 33, and the faster the polishing speed. The pressure in the polishing chamber 11 can be selected according to the actual polishing requirement. In one embodiment, the pressure in the high pressure mode is in a range of 2 to 10 atm, which is suitable for rough polishing. The pressure in the low pressure mode is in a range of 100 mTorr to 2 atm, which is suitable for high precision polishing.

[0092] As described in the above embodiment, the pressure controller 31 can be a hydraulic pump, a pneumatic cylinder or a motor, which drives the top plate 12 to move up and down in the vertical direction to adjust the magnitude of the pressure exerted by the top plate 12 on the polishing fluid 21. The pressure controller 31 can also be a gas pressure regulator, which inputs gas into the polishing chamber 11 to exert a pressure on the polishing fluid 32, and adjusts the magnitude of the vertical fluid pressure exerted by the polishing fluid 32 on the surface of the substrate 33 by adjusting the pressure of the input gas.

[0093] In one embodiment, the moving speed of the substrate 33 is in a range of 0.1 cm / sec to 10 cm / sec. Generally, the faster the moving speed of the substrate 33, the faster the polishing speed. The moving speed of the substrate 33 can be selected according to the actual polishing requirement. In one embodiment, when high precision polishing is required, a smaller moving speed of the substrate 33 is selected, preferably in a range of 0.1 cm / sec to 2 cm / sec. When rough polishing is required, a larger moving speed of the substrate 33 is selected, preferably in a range of 2 cm / sec to 10 cm / sec.

[0094] In one embodiment, the temperature of the polishing fluid 32 is preferably in a range of -70°C to 150°C. Adjusting the temperature of the polishing fluid 32 can make the molecules in the polishing fluid 32 more active, which is beneficial to enhancing the polishing effect. The temperature of the polishing fluid 32 can be selected according to different polishing modes to achieve better polishing effect.

[0095] In one embodiment, the polishing fluid 32 is a non-chemically active and non-abrasive gas or liquid. The polishing fluid 32 of the present embodiment does not contain any abrasive or chemical components, so that the impurities caused by the abrasive chemical polishing liquid in the conventional CMP (chemical mechanical polishing) can be avoided, the polishing quality can be improved, and the polishing defects can be reduced. Preferably, the polishing fluid 32 can include, but is not limited to, any one or more of pure water, isopropyl alcohol, water vapor, organic vapor, or inert gas. One or more of the above can be combined according to different temperatures, pressures, and moving speeds of the substrate 33 to meet the requirements of rough polishing or fine polishing, to meet the requirements of different process sections, and to obtain better polishing effects. When the polishing fluid 32 is combined with the above fluids, the different polishing fluids 32 can be added sequentially or mixedly, and the appropriate polishing fluid 32 adding method is selected according to the actual application, and the present embodiment is not specifically limited.

[0096] In one embodiment, after step S4, the following step is further included: introducing a cleaning fluid to clean the substrate. Specifically, after the polishing of the substrate 33 is completed, the controller controls the liquid discharge assembly 21 to discharge the polishing fluid 32, and then the controller controls the liquid supply assembly to input the cleaning fluid to clean the substrate 33. Further, the cleaning fluid can be the same as or different from the polishing fluid 32. In one embodiment, the cleaning fluid can include, but is not limited to, any one or more of pure water, isopropyl alcohol, water vapor, organic vapor, or inert gas. The above cleaning fluids can be added sequentially or mixedly to obtain better cleaning effects. Further, the cleaning fluid can be selected according to different temperatures, pressures, and moving speeds of the substrate 33 to obtain better cleaning effects.

[0097] In one embodiment, after the surface cleaning step of the substrate is completed, the following step is further included: drying the substrate. Specifically, after the cleaning of the substrate 33 is completed, the controller controls the liquid discharge assembly 21 to discharge the cleaning fluid, and then the controller controls the liquid supply assembly to input a drying gas to dry the substrate 33. Further, the inert gas nitrogen is used to dry the substrate 33. Further, the drying gas can be selected according to different temperatures, pressures, and moving speeds of the substrate 33 to obtain better drying effects.

[0098] It can be understood that the above polishing method combines the polishing, cleaning, and drying steps of the substrate 33, and all the steps can be completed in one chamber in sequence, so that the process flow is simplified, the substrate 33 is dried in and dried out to complete the entire polishing process, the particles and other defects caused by the frequent replacement of the chamber for cleaning and drying in the conventional polishing process are reduced, the process flow is simplified, the polishing quality is improved, and the equipment cost and operation cost are reduced.

[0099] In one embodiment, the polishing method further comprises the step of periodically replacing or filtering the polishing fluid. Specifically, the polishing device has a liquid discharge assembly 21 connected to the holding container 10 and in communication with the polishing chamber 11 for discharging the polishing fluid 32 in the polishing chamber 11. As the substrate 33 is polished by the abrasive cutting action of the polishing fluid 32, surface protrusions are removed by the abrasive cutting action, and the removed protrusions can exist in the polishing fluid 32 in the form of tiny particles, which can affect the subsequent continuous abrasive cutting and cause damage to the substrate 33 if not discharged. The embodiment provides the liquid discharge assembly 21 to discharge the polishing fluid 32, which can replace the polishing fluid 32 to remove the tiny particles in the polishing fluid 32, and then input new polishing fluid 32 by the liquid supply assembly, thereby effectively avoiding damage to the substrate 33. Preferably, the polishing process can be continuously and effectively performed by discharging the polishing fluid 32 by the liquid discharge assembly 21 and inputting new polishing fluid 32 by the liquid supply assembly at the same time during the polishing process. Further preferably, to further save polishing costs, the polishing fluid 32 can be periodically replaced by discharging at intervals of a predetermined time.

[0100] Further, a filtering assembly can also be included, which can include a filter connected to the liquid discharge assembly 21 for filtering and cleaning the polishing fluid 32 discharged by the liquid discharge assembly 21. After the polishing fluid 32 is discharged by the liquid discharge assembly 21, the filter can be used to filter and clean the discarded polishing fluid 32 so that the discarded polishing fluid 32 can be reused, effectively avoiding damage to the substrate 33 and saving polishing costs. Preferably, the polishing process can be continuously and effectively performed by discharging the polishing fluid 32 by the liquid discharge assembly 21 and filtering the discharged polishing fluid 32 by the filtering assembly, and inputting new polishing fluid 32 by the liquid supply assembly. Further preferably, to further save polishing costs, the polishing fluid 32 can be periodically replaced by discharging at intervals of a predetermined time.

[0101] The above polishing method is described in detail below in combination with specific embodiments. One polishing method comprises the following steps:

[0102] First, the polishing fluid 32, pure water, is input into the polishing chamber 11 to immerse the substrate 33, the pressure of the polishing fluid 32 is controlled to be 5 atm, the temperature is controlled to be 50°C, the moving speed of the substrate 33 is controlled to be 5 cm / sec, and the polishing duration is controlled to be 2 hours for rough polishing.

[0103] Then, the pressure of the polishing fluid 32, pure water, is controlled to be 2 atm, the temperature is controlled to be 50°C, the moving speed of the substrate 33 is controlled to be 2 cm / sec, and the polishing duration is controlled to be 1 hour for high-quality polishing.

[0104] Then, the polishing fluid 32 is discharged, a cleaning fluid of pure water is input, the pressure of the cleaning fluid is controlled to be 1 atm, the temperature is controlled to be 100℃, the moving speed of the substrate 33 is controlled to be 1 cm / sec, and the duration is controlled to be 0.5 hours to perform the cleaning after polishing.

[0105] Finally, the cleaning fluid is discharged, a dry gas nitrogen is input, the pressure of the nitrogen is controlled to be 1 atm, the temperature is controlled to be 50℃, and the duration is controlled to be 0.5 hours to perform the drying of the substrate 33.

[0106] The polishing method described above uses the non-chemically active and non-abrasive polishing fluid 32 to continuously abrade the protrusions on the surface of the substrate 33 to polish the substrate 33, does not need the rotation of the polishing pad or the heavy mechanical top plate and bottom plate, and realizes the non-contact polishing of the substrate 33 by applying the uniform vertical fluid pressure on the surface of the substrate 33 by the polishing fluid 32, which can effectively avoid the damage to the surface of the substrate 33 caused by the mechanical contact pressure and the mechanical grinding of the abrasive grains in the traditional CMP method, thereby effectively protecting the substrate 33, improving the polishing quality, and realizing the high-precision polishing.

[0107] The above description is only a description of the preferred embodiments of the present application, and does not limit the scope of the present application in any way. Any modification or change made by a person of ordinary skill in the art based on the above disclosure belongs to the scope of the technical solution of the present application.

Claims

1. A method of polishing, characterized by, The method comprises: placing a substrate to be polished in a polishing chamber; adding a non-chemically active and abrasive-free polishing fluid into the polishing chamber, so that the polishing fluid immerses the substrate and exerts a vertical fluid pressure on the surface of the substrate; moving the substrate in a plane in which the surface of the substrate is located, so that the polishing fluid abrades the protrusions on the surface of the substrate; maintaining the polishing fluid to continuously abrade the protrusions to remove the protrusions, and polish the surface of the substrate.

2. The polishing method according to claim 1, wherein The method further comprises the following steps: applying pressure to the polishing fluid in the polishing chamber to adjust the magnitude of the vertical fluid pressure exerted by the polishing fluid on the surface of the substrate.

3. The polishing method according to claim 2, wherein The pressure in the polishing chamber is 100 mTorr to 10 atm.

4. The polishing method according to claim 1, wherein The temperature of the polishing fluid is -70°C to 150°C, the moving speed of the substrate is 0.1 cm / sec to 10 cm / sec, and the time for which the polishing fluid continuously abrades the protrusions is not less than 10 minutes.

5. The polishing method according to claim 1, wherein After the step of polishing the surface of the substrate is completed, the method further comprises the following step: introducing a cleaning fluid to clean the substrate.

6. The polishing method according to claim 5, wherein After the step of introducing the cleaning fluid to clean the substrate, the method further comprises the following step: discharging the cleaning fluid and drying the substrate.

7. The polishing method according to claim 1, wherein The method further comprises the following steps: periodically replacing or filtering the polishing fluid.

8. The polishing method according to any one of claims 1 to 7, wherein The polishing fluid comprises any one or more of pure water, isopropyl alcohol, water vapor, organic vapor, or inert gas.

9. A polishing apparatus characterized by comprising: The apparatus comprises: a carrier container having a polishing chamber; a liquid supply assembly connected to the carrier container and in communication with the polishing chamber, for transmitting a polishing fluid into the polishing chamber so that the polishing fluid immerses the substrate and exerts a vertical fluid pressure on the surface of the substrate; a support member at least partially disposed in the carrier container, for supporting and fixing the substrate, and the support member is configured to move the substrate in a plane in which the surface of the substrate is located.

10. The polishing apparatus according to claim 9, wherein The apparatus further comprises a pressure controller disposed on the carrier container, for applying pressure to the polishing fluid to adjust the magnitude of the vertical fluid pressure exerted by the polishing fluid on the surface of the substrate to be polished.

11. The polishing apparatus according to claim 9, wherein the support member comprises a bracket and a driving member, the bracket is disposed in the carrier container, the driving member is connected to the bracket, and the driving member is configured to provide a driving force to the bracket to rotate the bracket; or the support member comprises a bracket, a magnet, a guide rail, and a coil, the bracket and the guide rail are both disposed in the carrier container, the guide rail is connected to the carrier container, the coil is disposed on the guide rail, the magnet is disposed on the bracket, and the magnet and the coil generate a repulsive force to make the bracket move relative to the guide rail in a levitation manner.

12. The polishing apparatus according to claim 11, wherein the bracket abuts against the side edges of the substrate to fix the substrate; or the bracket abuts against the side edges of the substrate and is attached to one side surface of the substrate to fix the substrate. ​ ​ 13. The polishing apparatus of claim 10, wherein The polishing device further comprises: a liquid discharge assembly connected with the bearing container and communicated with the polishing chamber for discharging the polishing fluid in the polishing chamber; or, a liquid discharge assembly connected with the bearing container and communicated with the polishing chamber for discharging the polishing fluid in the polishing chamber, and a filter assembly connected with the liquid discharge assembly for filtering and cleaning the polishing fluid discharged by the liquid discharge assembly.

14. The polishing apparatus of claim 13, wherein A controller is further included, which is electrically connected with the liquid supply assembly, the liquid discharge assembly, the filter assembly, the pressure controller and the support, respectively.

15. The polishing apparatus of claim 9, wherein The bearing container comprises a bottom plate, a side plate and a top plate, the side plate and the bottom plate are connected to form the polishing chamber, the top plate and the side plate are detachably connected, and the bottom plate has a protrusion extending from the surface of the bottom plate into the polishing chamber.

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