Gas extraction mechanism, and processing apparatus and processing method for semiconductor device

Abstract

A gas extraction mechanism (200), and a processing apparatus (100) and processing method for a semiconductor device. The gas extraction mechanism (200) comprises: a gas extraction base pipe (210), which moves between a first gas extraction port (130) located on a side wall of a reaction chamber (110) and a second gas extraction port (140) located at the bottom of the reaction chamber (110), wherein a first end of the gas extraction base pipe (210) is connected to a gas extraction device, and a second end thereof is provided with at least one third gas extraction port (220); by moving the gas extraction base pipe (210), the third gas extraction port (220) is communicated with the first gas extraction port (130) and / or the second gas extraction port (140). The described gas extraction mechanism (200) is simple and practical, has low costs, not only can improve the gas extraction rate and gas extraction uniformity of gas in the reaction chamber (110) during processing of semiconductor devices, but also can improve the flexibility of the process flow during processing, thus improving the production capacity of apparatuses.

Description

Pumping mechanism, semiconductor device processing equipment and processing method TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor processing, and in particular to a pumping mechanism, a semiconductor device processing equipment, a semiconductor device processing method, and a computer readable storage medium. BACKGROUND

[0002] In the thin film deposition process of a semiconductor, the film can be plated or etched by chemical reaction of a plurality of process gases at a certain temperature and pressure. During the process, the reaction of the plurality of gases produces some reaction byproducts, which affect the number and movement of particles in the reaction chamber, and even cause particle contamination of the wafer, thereby greatly affecting the process result. Generally, after the process is completed, the excess reaction gas and byproducts can be pumped out of the reaction chamber by a pumping device.

[0003] With the continuous progress of semiconductor plating technology, the control of pumping speed and uniformity is becoming more and more strict. At present, there is only one fixed pumping outlet in the reaction chamber, which cannot be directly adjusted. There are two ways to pump at present, the first is to pump at the bottom of the reaction chamber, and the second is to pump at the sidewall of the reaction chamber. The uniformity of bottom pumping performs better, but its disadvantage is that the rate is low, and because there are many parts at the bottom of the reaction chamber, the bottom parts are easily contaminated during the thin film deposition process, which affects the effect of the thin film deposition process. Although the sidewall pumping has high pumping rate and relatively few contaminated parts during the pumping process, the uniformity of the pumping process is relatively poor, so the cleaning effect of the sidewall pumping on each region and each part in the chamber is poor during the chamber cleaning process.

[0004] In order to solve the above problems existing in the prior art, there is an urgent need in the art for a pumping mechanism which is simple and practical, and has low cost, can not only improve the pumping rate and uniformity of the gas in the reaction chamber during the processing of the semiconductor device, but also improve the flexibility of the process flow during the processing, and improve the equipment productivity.

[0005] SUMMARY

[0006] The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

[0007] In order to overcome the above-mentioned defects existing in the prior art, the application provides an air extraction mechanism, a semiconductor device processing equipment, a semiconductor device processing method and a computer readable storage medium, which are simple and practical, low in cost, capable of improving the air extraction rate and uniformity of the gas in the reaction cavity during the processing of the semiconductor device, and improving the flexibility of the process flow during the processing and the equipment productivity.

[0008] Specifically, the air extraction mechanism provided by the first aspect of the application comprises: an air extraction base pipe, which moves between a first air extraction port located on the side wall of a reaction cavity and a second air extraction port located on the bottom of the reaction cavity, wherein the first end of the air extraction base pipe is connected to an air extraction device, and the second end of the air extraction base pipe is provided with at least one third air extraction port, and the third air extraction port is communicated to the first air extraction port and / or the second air extraction port by moving the air extraction base pipe.

[0009] Further, in some embodiments of the application, a translation mechanism is further included, which comprises a sliding table module located in a guide rail, one end of the sliding table module is connected to the air extraction base pipe, and the other end of the sliding table module is connected to a driving motor, and the sliding table module slides under the driving of the driving motor to drive the air extraction base pipe to perform translational motion.

[0010] Further, in some embodiments of the application, a first bellows is arranged at a first connection between the air extraction base pipe and the translation mechanism, and is used to seal the first connection during the translation of the air extraction base pipe, and a second bellows is arranged at a second connection between the air extraction base pipe and a fixed base, wherein the air extraction base pipe is connected to the air extraction device via the fixed base, and the second bellows is used to seal the second connection during the translation of the air extraction base pipe.

[0011] Further, in some embodiments of the application, a rotation mechanism is further included, which comprises a first gear fixed on a support seat, one end of the first gear is in contact with a second gear on the air extraction base, and the other end of the first gear is connected to a driving motor, and the first gear rotates under the driving of the driving motor and drives the second gear to rotate, so as to drive the air extraction base pipe to perform rotational motion.

[0012] Further, in some embodiments of the application, the second end of the air extraction base pipe is provided with at least one fourth air extraction port, the height of the third air extraction port corresponds to the position of the first air extraction port of the side wall of the reaction cavity, the height of the fourth air extraction port corresponds to the position of the second air extraction port of the bottom of the reaction cavity, and the third air extraction port and the fourth air extraction port are distributed at an angle of 90°.

[0013] Further, in some embodiments of the present application, further comprising: a magnetic fluid arranged at least at a third connection between the pumping base pipe and the fixed base, wherein the pumping base pipe is sleeved in the fixed base and connected to the pumping device via the fixed base, and the magnetic fluid is used to seal the third connection during rotation of the pumping base pipe.

[0014] Further, in some embodiments of the present application, further comprising: a controller configured to: determine target opening degrees of the first pumping port and the second pumping port respectively; and adjust a translation distance or a rotation angle of the pumping base pipe based on the target opening degrees of the first pumping port and the second pumping port respectively, so that the third pumping port in the pumping base pipe is communicated to the first pumping port and / or the second pumping port.

[0015] Further, in some embodiments of the present application, the step of determining the target opening degrees of the first pumping port and the second pumping port respectively comprises: determining the target opening degrees of the first pumping port and the second pumping port respectively according to a process flow in the reaction cavity; determining that the target opening degree of the first pumping port is greater than the target opening degree of the second pumping port in response to the process flow being a thin film deposition process; and determining that the target opening degree of the second pumping port is greater than the target opening degree of the first pumping port in response to the process flow being a cavity cleaning process.

[0016] Further, in some embodiments of the present application, the step of adjusting the translation distance or the rotation angle of the pumping base pipe based on the target opening degrees of the first pumping port and the second pumping port respectively, so that the third pumping port in the pumping base pipe is communicated to the first pumping port and / or the second pumping port comprises: translating the pumping base pipe by a first distance to increase an opening degree of a communication port between the third pumping port and the first pumping port and decrease an opening degree of a communication port between the third pumping port and the second pumping port in response to the process flow being a thin film deposition process; extracting process gas from a sidewall of the reaction cavity at least via the first pumping port in response to the opening degree of the communication port between the third pumping port and the first pumping port reaching the target opening degree; or translating the pumping base pipe by a second distance to increase the opening degree of the communication port between the third pumping port and the second pumping port and decrease the opening degree of the communication port between the third pumping port and the first pumping port in response to the process flow being a cavity cleaning process; extracting cleaning gas from a bottom of the reaction cavity at least via the second pumping port in response to the opening degree of the communication port between the third pumping port and the second pumping port reaching the target opening degree.

[0017] Further, in some embodiments of the present application, the step of adjusting the translation distance or the rotation angle of the pumping base pipe to connect the third pumping port in the pumping base pipe to the first pumping port and / or the second pumping port based on the target opening degree of each of the first pumping port and the second pumping port includes: in response to the process flow being a thin film deposition process, rotating the pumping base pipe by a first angle to increase the opening degree of the communication port between the third pumping port and the first pumping port and to decrease the opening degree of the communication port between a fourth pumping port located at the second end of the pumping base pipe and distributed at 90° from the third pumping port and the second pumping port; in response to the opening degree of the communication port between the third pumping port and the first pumping port reaching the target opening degree, pumping process gas from the sidewall of the reaction chamber via at least the first pumping port; or in response to the process flow being a chamber cleaning process, rotating the pumping base pipe by a second angle to increase the opening degree of the communication port between the fourth pumping port and the second pumping port and to decrease the opening degree of the communication port between the third pumping port and the first pumping port; in response to the opening degree of the communication port between the fourth pumping port and the second pumping port reaching the target opening degree, pumping cleaning gas from the bottom of the reaction chamber via at least the second pumping port.

[0018] Further, the processing apparatus of the semiconductor device according to the second aspect of the present application includes: a reaction chamber, the inside of which includes a heating disc to support a wafer and perform a thin film deposition process on the wafer, wherein a sidewall of the reaction chamber is provided with a first pumping port and a bottom of the reaction chamber is provided with a second pumping port; and the pumping mechanism according to the first aspect of the present application, by moving the pumping base pipe in the pumping mechanism, to adjust the third pumping port in the pumping base pipe to be connected to the first pumping port and / or the second pumping port.

[0019] Further, in some embodiments of the present application, a plurality of the reaction chambers are included, the pumping mechanism is located between each of the reaction chambers, and the second end of the pumping base includes a plurality of third pumping ports, by translating the pumping base pipe to connect each of the third pumping ports in the pumping base pipe to the first pumping port and / or the second pumping port in each of the reaction chambers.

[0020] Further, in some embodiments of the present application, the second end of the gas extraction base pipe further comprises a plurality of fourth gas extraction ports, wherein the height of each third gas extraction port corresponds to the position of the first gas extraction port of each side wall of the reaction cavity, the height of each fourth gas extraction port corresponds to the position of the second gas extraction port of each bottom of the reaction cavity, and the third gas extraction ports and the fourth gas extraction ports are distributed at an angle of 90°, and the gas extraction base pipe is rotated to connect each third gas extraction port and each fourth gas extraction port in the gas extraction base pipe to the first gas extraction port and / or the second gas extraction port in each reaction cavity, respectively.

[0021] Further, the processing method of the semiconductor device according to the third aspect of the present application comprises: determining the target opening degree of the first gas extraction port and the second gas extraction port in each reaction cavity of the processing equipment of the semiconductor device according to the first aspect of the present application, respectively; and adjusting the translation distance or the rotation angle of the gas extraction base pipe in the gas extraction mechanism of the processing equipment of the semiconductor device based on the target opening degree of the first gas extraction port and the second gas extraction port, respectively, so that the third gas extraction port in the gas extraction base pipe is connected to the first gas extraction port and / or the second gas extraction port.

[0022] Further, the fourth aspect of the present application further provides a computer readable storage medium having computer instructions stored thereon. When the computer instructions are executed by a processor, the processing method of the semiconductor device according to the third aspect of the present application is implemented. BRIEF DESCRIPTION OF DRAWINGS

[0023] The above features and advantages of the present application can be better understood by reading the following detailed description of embodiments of the present application in conjunction with the drawings, in which: In the drawings, components are not necessarily drawn to scale, and components of similar or identical function or structure can have the same or similar reference label.

[0024] FIG. 1 shows a structural schematic diagram of a processing equipment of a semiconductor device according to some embodiments of the present application;

[0025] FIG. 2 shows a structural schematic diagram of a gas extraction mechanism according to some embodiments of the present application;

[0026] FIG. 3 shows a structural schematic diagram of a gas extraction mechanism according to some other embodiments of the present application;

[0027] FIG. 4A shows a structural schematic diagram of a gas extraction base pipe according to some other embodiments of the present application;

[0028] FIG. 4B shows a cross-sectional view of the gas extraction base pipe shown in FIG. 4A;

[0029] FIG. 5A shows a hole position structural schematic diagram of a third gas extraction port in a gas extraction base pipe according to some embodiments of the present application;

[0030] Figure 5B shows a schematic view of the hole site structure of the third and fourth suction ports in the suction base pipe according to some embodiments of the present application.

[0031] Figure 6 shows a flow chart of a method for processing a semiconductor device according to some embodiments of the present application;

[0032] Figure 7A shows a schematic view of the gas flow path in the suction mechanism when adjusting the suction port of the reaction cavity by translating the suction base pipe according to some embodiments of the present application;

[0033] Figure 7B shows a schematic view of the gas flow path when performing sidewall suction of the reaction cavity according to some embodiments of the present application; and

[0034] Figure 7C shows a schematic view of the gas flow path in the suction mechanism when performing bottom suction of the reaction cavity according to some embodiments of the present application.

[0035] Figure 8A shows a schematic view of the gas flow path in the suction mechanism when adjusting the suction port of the reaction cavity by rotating the suction base pipe according to some embodiments of the present application;

[0036] Figure 8B shows a schematic view of the gas flow path when performing sidewall suction of the reaction cavity according to some embodiments of the present application; and

[0037] Figure 8C shows a schematic view of the gas flow path in the suction mechanism when performing bottom suction of the reaction cavity according to some embodiments of the present application.

[0038] 100, 100' processing apparatus of semiconductor device; 110 reaction cavity; 111 side extraction ring; 112 bottom extraction ring; 120 heating disc; 130 first extraction port; 140 second extraction port; 200, 300 extraction mechanism; 210, 310 extraction base pipe; 220, 320 third extraction port; 230 translation mechanism; 231 sliding table module; 232 guide rail; 233, 342 driving motor; 241 first bellows; 242 second bellows; 250, 350 fixed base; 311 second gear; 330 fourth extraction port; 340 rotation mechanism; 341 first gear; 343 support base; 360 magnetic fluid; and S610-S620 steps. DETAILED DESCRIPTION

[0039] The present application is described in detail by specific embodiments, and other advantages and effects of the present application can be easily understood by those skilled in the art from the disclosure of the present application. Although the description of the present application will be introduced in combination with the preferred embodiments, it does not mean that the features of the present application are limited to the embodiments. On the contrary, the purpose of introducing the present application in combination with the embodiments is to cover other options or modifications that can be extended based on the claims of the present application. In order to provide a deep understanding of the present application, many specific details will be included in the following description. The present application can also be implemented without using these details. In addition, in order to avoid confusion or obscure the focus of the present application, some specific details will be omitted in the description.

[0040] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integral connection; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0041] In addition, "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description and shown in the drawings should be understood as the orientation shown in the drawing and relative to the article being described. These relative terms are used only to facilitate the description of the exemplary embodiments and are not intended to limit the position, orientation, or use of the device described.

[0042] It is to be understood that the terms "first", "second", "third", and so on, used herein to describe various components, regions, layers and / or sections, should not be construed as limiting those components, regions, layers and / or sections, and the terms are merely used to distinguish different components, regions, layers and / or sections. Therefore, the first components, regions, layers and / or sections discussed below can be referred to as the second components, regions, layers and / or sections without departing from some embodiments of the present application.

[0043] As described above, the current reaction chamber has only one fixed exhaust outlet, which cannot be directly adjusted. There are two ways to exhaust air currently adopted, the first is to exhaust air at the bottom of the reaction chamber, and the second is to exhaust air at the sidewall of the reaction chamber. The uniformity of the bottom exhaust is better, but its disadvantage is that the rate is low, and because there are more components at the bottom of the general reaction chamber, during the thin film deposition process, the bottom components are easily contaminated through the bottom exhaust, which affects the effect of the thin film deposition process. Although the sidewall exhaust has a high exhaust rate, the components contaminated during the exhaust process are relatively few, but the uniformity of the exhaust is relatively poor, so during the chamber cleaning process, the cleaning effect of each area and each component in the chamber is poor through the sidewall exhaust.

[0044] In order to solve the above problems existing in the prior art, the present application provides an exhaust mechanism, a semiconductor device processing equipment, a semiconductor device processing method, and a computer readable storage medium, which are simple and practical, low in cost, can not only improve the exhaust rate and uniformity of the gas in the reaction chamber during the processing of the semiconductor device, but also improve the flexibility of the process flow during the processing and improve the equipment productivity.

[0045] In some non-limiting embodiments, the above-mentioned exhaust mechanism provided by the first aspect of the present application can be configured in the above-mentioned semiconductor device processing equipment provided by the second aspect of the present application, and used to implement the above-mentioned semiconductor device processing method provided by the third aspect of the present application.

[0046] Specifically, in some non-limiting embodiments, the above-mentioned computer readable storage medium provided by the fourth aspect of the present application has computer instructions stored thereon. When the computer instructions are executed by a processor, they can be used to implement the above-mentioned semiconductor device processing method provided by the third aspect of the present application.

[0047] The working principle of the above-mentioned pumping mechanism will be described below in combination with some embodiments of semiconductor device processing apparatuses and semiconductor device processing methods. Those skilled in the art can understand that the above-mentioned embodiments of semiconductor device processing apparatuses and semiconductor device processing methods are only some non-restrictive embodiments provided by the present application, which are intended to clearly show the main concept of the present application and provide some specific solutions for the public to implement, but not to limit the whole working mode or the whole function of the pumping mechanism. Similarly, the pumping mechanism is also only a non-restrictive embodiment provided by the present application, which does not limit the configuration object of the semiconductor device processing apparatus and the implementation subject of each step in the semiconductor device processing method.

[0048] Please refer to FIG. 1, which shows a structural schematic diagram of a semiconductor device processing apparatus according to some embodiments of the present application.

[0049] As shown in FIG. 1, in some embodiments of the present application, the semiconductor device processing apparatus 100 can include a reaction cavity 110 and a pumping mechanism 200. The inside of the reaction cavity 110 can include a heating plate 120 for supporting a wafer and performing a thin film deposition process. Further, the sidewall of the reaction cavity 110 is provided with a first pumping port 130, and the bottom of the reaction cavity 110 is provided with a second pumping port 140. Specifically, the first pumping port 130 located at the sidewall can be arranged above the heating plate 120 for pumping the gas in the space above the heating plate 120, and the second pumping port 140 located at the bottom can be arranged below the heating plate 120 for pumping the gas in the space below the heating plate 120. By moving the pumping base pipe 210 in the pumping mechanism 200, the third pumping port 220 in the pumping base pipe 210 can be adjusted to be communicated to the first pumping port 130 and / or the second pumping port 140.

[0050] Specifically, continuing to refer to FIG. 1, the gas extraction mechanism 200 can include a gas extraction base pipe 210. The gas extraction base pipe 210 can be movable between a first gas extraction port 130 located at a sidewall of the reaction chamber 110 and a second gas extraction port 140 located at a bottom of the reaction chamber 110, wherein a first end (e.g., a lower end) of the gas extraction base pipe 210 can be connected to a gas extraction device (not shown in the drawings), and a second end of the gas extraction base pipe 210 can be provided with at least one third gas extraction port 220. By moving the gas extraction base pipe 210, the third gas extraction port 220 can be communicated to the first gas extraction port 130 and / or the second gas extraction port 140. It can be understood that the first gas extraction port 130 and the second gas extraction port 140 in the reaction chamber 110 can not only include a structure of one gas extraction port, but also can include the gas extraction port and a corresponding small transmission channel to transmit the gas into the gas extraction base pipe 210.

[0051] Further, in some optional embodiments, the gas extraction mechanism 200 can include a translation mechanism 230 to drive the gas extraction base pipe 210 to perform a translation movement. Referring to FIG. 2, FIG. 2 shows a structural schematic diagram of a gas extraction mechanism according to some embodiments of the present application. As shown in FIG. 2, the translation mechanism 230 can include a sliding table module 231 located in a guide rail 232. One end of the sliding table module 231 is connected to the gas extraction base pipe 210, and the other end of the sliding table module 231 is connected to a driving motor 233, so that the sliding table module 231 can slide under the driving of the driving motor 233, thereby driving the gas extraction base pipe 210 to perform a translation movement, such as a lifting movement.

[0052] Continuing to refer to FIG. 2, a first bellows 241 can be provided at a first connection between the gas extraction base pipe 210 and the translation mechanism 230. Based on the telescopic structure of the bellows, the first bellows 241 can seal the first connection during the translation (e.g., lifting) of the gas extraction base pipe 210. A second bellows 242 can also be provided at a second connection between the gas extraction base pipe 210 and a fixed base 250, wherein the gas extraction base pipe 210 can be connected to the gas extraction device via the fixed base 250. The second bellows 242 can seal the second connection during the translation (e.g., lifting) of the gas extraction base pipe 210.

[0053] Optionally, referring to FIG. 3, FIG. 3 shows a structural schematic diagram of a gas extraction mechanism according to some other embodiments of the present application.

[0054] As shown in FIG. 3, in some other embodiments of the present application, another gas extraction mechanism 300 can be used in the semiconductor device processing apparatus 100 to extract gas from the first gas extraction port 130 on the sidewall of the reaction chamber 110 and / or the second gas extraction port 140 on the bottom of the reaction chamber 110. Since other components of the semiconductor device processing apparatus 100 are not adjusted, they will not be described here.

[0055] The gas extraction mechanism 300 includes a gas extraction base pipe 310, which can be moved between the first gas extraction port 130 on the sidewall of the reaction chamber 110 and the second gas extraction port 140 on the bottom of the reaction chamber 110. The first end of the gas extraction base pipe 310 can be connected to a gas extraction device, and the second end of the gas extraction base pipe 310 can be provided with at least one third gas extraction port 320. Further, the gas extraction mechanism 300 can optionally include a rotating mechanism 340 to drive the gas extraction base pipe 310 to perform a rotating motion. By rotating the gas extraction base pipe 310, the third gas extraction port 320 can be communicated to the first gas extraction port 130 and / or the second gas extraction port 140.

[0056] Further, in some preferred embodiments, please refer to FIG. 4A and FIG. 4B, FIG. 4A shows a structural schematic diagram of a gas extraction base pipe according to some other embodiments of the present application, and FIG. 4B shows a sectional view of the gas extraction base pipe shown in FIG. 4A.

[0057] As shown in FIG. 4A and FIG. 4B, the second end of the gas extraction base pipe 310 can be further provided with at least one fourth gas extraction port 330. In combination with FIG. 3, the height of the third gas extraction port 320 can correspond to the position of the first gas extraction port 130 on the sidewall of the reaction chamber 110, and the third gas extraction port 320 can extract gas in the space above the heating plate 120. The height of the fourth gas extraction port 330 can correspond to the position of the second gas extraction port 140 on the bottom of the reaction chamber 110, and the fourth gas extraction port 330 can extract gas in the space below the heating plate 120. The third gas extraction port 320 and the fourth gas extraction port 330 can be distributed at an angle of 90°.

[0058] Further, in combination with FIG. 3, FIG. 4A and FIG. 4B, the rotating mechanism 340 can include a first gear 341 fixed on a support seat 343. One end of the first gear 341 can be in contact with a second gear 311 on the gas extraction base pipe 310, and the other end of the first gear 341 can be connected to a driving motor 342. Optionally, the driving motor 342 can be a rotating motor. As shown in FIG. 3, the first gear 341 can be rotated under the driving of the driving motor 342 and drive the second gear 311 to rotate, thereby driving the gas extraction base pipe 310 to perform a rotating motion.

[0059] Further, please continue to refer to FIG. 4B, the gas extraction mechanism 300 can further include a magnetic fluid 360. The magnetic fluid 360 can be disposed at least at a third connection between the gas extraction base pipe 310 and the fixed base 350, wherein the gas extraction base pipe 310 is sleeved in the fixed base 350, and can include an upper flange on the upper side of the second gear 311 and a lower flange on the lower side of the second gear 311, so as to fix the gas extraction base pipe 310 and connect it to the gas extraction device. The fixed base 350 cannot rotate, but the gas extraction base pipe 310 sleeved therein can rotate, and therefore the magnetic fluid 360 can be used to seal the third connection during the rotation of the gas extraction base pipe 310.

[0060] Those skilled in the art can understand that the number and structural design of the third gas extraction port 220 in the gas extraction mechanism 200, and the third gas extraction port 320 and the fourth gas extraction port 330 in the gas extraction mechanism 300 described above are only a non-limiting embodiment provided by the present application, which is intended to clearly show the main concept of the present application and provide a specific scheme for the public to implement, rather than to limit the protection scope of the present application. Alternatively, in other embodiments, those skilled in the art can also use other equivalent structural designs based on the concept of the present application to achieve the same technical effects.

[0061] Please refer to FIGS. 5A and 5B, FIG. 5A shows a schematic diagram of the hole position structure of the third gas extraction port in the gas extraction base pipe according to some embodiments of the present application, and FIG. 5B shows a schematic diagram of the hole position structure of the third gas extraction port and the fourth gas extraction port in the gas extraction base pipe according to other embodiments of the present application.

[0062] As shown in FIGS. 5A and 5B, the third gas extraction port 220 in the gas extraction mechanism 200, and the third gas extraction port 320 and the fourth gas extraction port 330 in the gas extraction mechanism 300 can be provided as a gas extraction port composed of a plurality of small holes, and the number of small holes, the hole distribution, and the hole diameter can be adjusted as needed to align with the first gas extraction port 130 and / or the second gas extraction port 140 in the reaction chamber 110.

[0063] Please continue to refer to FIG. 1 or FIG. 3, in some preferred embodiments, the semiconductor device processing equipment 100 can further include a plurality of reaction chambers 110, such as two reaction chambers 110, so as to improve the equipment productivity.

[0064] Specifically, as shown in FIG. 1, the gas extraction mechanism 200 can be located between the reaction chambers 110, and the second end of the gas extraction base pipe 210 can include a plurality of (such as two) third gas extraction ports 220. By translating the gas extraction base pipe 210, each third gas extraction port 220 in the gas extraction base pipe 210 is communicated to the first gas extraction port 130 and / or the second gas extraction port 140 in each reaction chamber 110.

[0065] As shown in FIG. 3, the second end of the base pipe 310 can also include a plurality of fourth exhaust ports 330, wherein the height of each third exhaust port 320 can correspond to the position of the first exhaust port 130 on the sidewall of each reaction chamber 110, the height of each fourth exhaust port 330 can correspond to the position of the second exhaust port 140 on the bottom of each reaction chamber 110, and the third exhaust ports 320 and the fourth exhaust ports 330 can be distributed at an angle of 90°. By rotating the base pipe 310, each third exhaust port 320 and each fourth exhaust port 330 in the base pipe 310 can be respectively communicated to the first exhaust port 130 and / or the second exhaust port 140 in each reaction chamber 110.

[0066] To better introduce the working principle of the above-mentioned gas extraction mechanism, the gas extraction mechanism can further include a controller for performing each step in the method for processing a semiconductor device according to another aspect of the present application. Please refer to FIG. 6, which shows a flowchart of a method for processing a semiconductor device according to some embodiments of the present application.

[0067] In some embodiments of the present application, the method for processing a semiconductor device can include the step S610 of determining the target opening degree of the first exhaust port and the second exhaust port in each reaction chamber in the processing equipment of the semiconductor device, respectively.

[0068] Specifically, it can be understood in combination with FIG. 1 or FIG. 3 that different exhaust forms can be determined according to the process flow in each reaction chamber 110 in the processing equipment 100 of the semiconductor device, i.e., different stages of the film deposition process, such as bottom-only exhaust, sidewall-only exhaust, and combined bottom and sidewall exhaust, so as to determine the target opening degree of the first exhaust port 130 and the second exhaust port 140, respectively.

[0069] When the process flow performed in the reaction chamber 110 is a thin film deposition process, the target opening degree of the first exhaust port 130 is preferably greater than that of the second exhaust port 140. The reason is that, during the thin film deposition process, when sidewall exhaust is performed through the first exhaust port 130 on the sidewall of the reaction chamber 110, the process gas can be extracted from the edge of the upper part of the heating plate 120, which is equivalent to reducing the reaction volume and improving the rate, thereby improving the production capacity. Moreover, the gas flow path of the process gas is extracted from the upper part of the heating plate 120, so it will not flow to the lower part of the chamber, thus not polluting the components below the reaction chamber 110.

[0070] When the process performed in the reaction cavity 110 is a cavity cleaning process, the target opening of the second pumping port 140 is preferably larger than that of the first pumping port 130. The reason is that, during the cavity cleaning process, a large amount of cleaning gas is introduced into the cavity when bottom pumping is performed through the second pumping port 140 located at the bottom of the reaction cavity 110. When the cleaning gas is pumped from the lower part of the heating plate 120, all parts of the cavity, especially the bottom, can be cleaned, and the cleaning effect is more thorough.

[0071] When the entire space in the reaction cavity 110 (the upper and lower regions of the heating plate 120) needs to be pumped simultaneously, the pumping port on the pumping base pipe is connected to both the first pumping port 130 and the second pumping port 140, and the pumping rate can be adjusted by adjusting the size of the pumping port aligned with the first pumping port 130 and the second pumping port 140.

[0072] Continuing with FIG. 6, the method for processing the semiconductor device provided by the present application can further include the step S620 of adjusting the translation distance or the rotation angle of the pumping base pipe in the pumping mechanism of the processing equipment of the semiconductor device based on the target opening of the first pumping port and the second pumping port, so that the third pumping port in the pumping base pipe is connected to the first pumping port and / or the second pumping port.

[0073] Specifically, referring to FIGS. 7A-7C, FIG. 7A shows a schematic diagram of the air flow path in the pumping mechanism when the pumping base pipe is translated to adjust the pumping port of the reaction cavity according to some embodiments of the present application, FIG. 7B shows a schematic diagram of the air flow path when the sidewall of the reaction cavity is pumped according to some embodiments of the present application, and FIG. 7C shows a schematic diagram of the air flow path in the pumping mechanism when the bottom of the reaction cavity is pumped according to some embodiments of the present application.

[0074] As shown in FIG. 7A, in the embodiment where the processing equipment 100 of the semiconductor device includes the pumping mechanism 200, in response to the process flow being a thin film deposition process, the pumping base pipe 210 is translated by a first distance. During the translation of the pumping base pipe 210, both the first pumping port 130 of the sidewall of the reaction cavity 110 and the second pumping port 140 of the bottom can be in communication with the third pumping port 220, and through these two communication ports, the pumping gas enters the pumping base pipe 210. That is, by translating the pumping base pipe 210 by a distance, the opening of the first pumping port 130 and the second pumping port 140 can be adjusted at the same time, and the reaction cavity 110 can be subjected to various pumping modes such as bottom-only pumping, sidewall-only pumping, and combined bottom and sidewall pumping. Specifically, by translating the pumping base pipe 210 upward by the first distance, the opening of the communication port between the third pumping port 220 and the first pumping port 130 in the pumping base pipe 210 can be increased, and the opening of the communication port between the third pumping port 220 and the second pumping port 140 can be decreased.

[0075] When the opening of the communication port between the third pumping port 220 and the first pumping port 130 can reach the target opening, the process gas can be extracted from the sidewall of the reaction cavity 110 at least via the first pumping port 130. Preferably, as shown in FIG. 7B, when the pumping base pipe 210 is translated upward to the topmost end, the opening of the communication port between the third pumping port 220 and the first pumping port 130 is the largest, i.e., the third pumping port 220 is completely aligned to communicate the first pumping port 130, and the process gas can be extracted from the sidewall of the reaction cavity 110 via the first pumping port 130 (the direction of the gas flow is shown by the arrow in the figure), which is conducive to accelerating the rate at which the process gas is extracted from the edge of the upper part of the heating disc 120, reducing the reaction volume, improving the reaction rate, and thus improving the equipment productivity.

[0076] In response to the process flow being a chamber cleaning process, the pumping base pipe 210 is translated by a second distance to increase the opening of the communication port between the third pumping port 220 and the second pumping port 140 and decrease the opening of the communication port between the third pumping port 220 and the first pumping port 130. When the opening of the communication port between the third pumping port 220 and the second pumping port 140 reaches the target opening, the cleaning gas can be extracted from the bottom of the reaction cavity 110 at least via the second pumping port 140. Preferably, as shown in FIG. 7C, when the pumping base pipe 210 is translated downward to the bottommost end, the opening of the communication port between the third pumping port 220 and the second pumping port 140 is the largest, i.e., the third pumping port 220 is completely aligned to communicate the second pumping port 140, and the cleaning gas is extracted from the bottom of the reaction cavity 110 via the second pumping port 140 (the direction of the gas flow is shown by the arrow in the figure), which is conducive to accelerating the rate at which the cleaning gas is extracted from the edge of the lower part of the heating disc 120, increasing the cleaning area at the bottom of the chamber, improving the cleaning rate, and thus improving the cleaning efficiency.

[0077] Further, in order to improve the uniformity of the pumping in the thin film deposition process and the chamber cleaning process, as shown in FIG. 7B, the sidewall of the reaction chamber 110 can be provided with a sidewall pumping ring 111, the first pumping port 130 is connected to the sidewall pumping ring 111, and the sidewall pumping ring 111 surrounds the heating plate 120, for uniformly pumping the gas in the area above the heating plate 120, and the pumping effect is distributed in a circumferential symmetry, and is discharged from the first pumping port 130 through the pumping channel. As shown in FIG. 7C, the bottom of the reaction chamber 110 can be provided with a bottom pumping ring 112, the second pumping port 140 is connected to the bottom pumping ring 112, and the bottom pumping ring 112 is located below the heating plate 120, for uniformly pumping the gas in the area below the heating plate 120, and the pumping effect is distributed in a circumferential symmetry, and is discharged from the second pumping port 140 through the pumping channel.

[0078] In other optional embodiments, referring to FIGS. 8A-8C, FIG. 8A shows a schematic diagram of the gas flow path in the pumping mechanism when the reaction chamber pumping port is adjusted by rotating the pumping base pipe, according to other embodiments of the present application, FIG. 8B shows a schematic diagram of the gas flow path when the sidewall of the reaction chamber is pumped, according to other embodiments of the present application, and FIG. 8C shows a schematic diagram of the gas flow path in the pumping mechanism when the bottom of the reaction chamber is pumped, according to other embodiments of the present application.

[0079] As shown in FIG. 8A, in the embodiment in which the semiconductor device processing equipment 100 includes the pumping mechanism 300, in response to the process being a thin film deposition process, the pumping base pipe 310 is rotated by a second angle. As shown by the gas flow arrow direction in FIG. 8A, during the rotation of the pumping base pipe 310, the first pumping port 130 of the sidewall of the reaction chamber 110 and the second pumping port 140 of the bottom can be respectively communicated with the third pumping port 320 and the fourth pumping port 330, and the pumping enters the pumping base pipe 210 through the two communication ports. That is, by rotating the angle of the pumping base pipe 310, the opening of the first pumping port 130 and the second pumping port 140 can be adjusted at the same time, and the reaction chamber 110 can be pumped in various ways such as only bottom pumping, only sidewall pumping, and combination of bottom pumping and sidewall pumping. For example, when the rotation angle of the pumping base pipe 310 is greater than 0° and less than 90°, the third pumping port 320 and the fourth pumping port 330 can be simultaneously and partially communicated with the first pumping port 130 and the second pumping port 140 in the reaction chamber 110, and the rotation angle is different, and the size of the communication port between the first pumping port 130 and the second pumping port 140 is different.

[0080] Specifically, by rotating the pumping base pipe 310 by a first angle, the opening of the communication port between the third pumping port 320 and the first pumping port 130 can be increased, and the opening of the communication port between the fourth pumping port 330 located at the second end of the pumping base pipe 310 and distributed at 90° with the third pumping port 320 and the second pumping port 140 can be decreased.

[0081] When the opening of the communication port between the third pumping port 320 and the first pumping port 130 can reach the target opening, the process gas can be pumped from the sidewall of the reaction cavity 110 at least via the first pumping port 130. Preferably, as shown in FIG. 8B, when the pumping base pipe 310 is rotated by a first angle, such as the first angle is 0°, the opening of the communication port between the third pumping port 320 and the first pumping port 130 is the largest, that is, the third pumping port 320 is completely aligned to communicate the first pumping port 130, while the fourth pumping port 330 is closed to the second pumping port 140, and the process gas can be pumped from the sidewall of the reaction cavity 110 entirely via the first pumping port 130 (the gas flow direction is shown by the arrow in the figure), which is conducive to accelerating the rate of process gas being pumped away from the edge of the upper part of the heating disc 120, reducing the reaction volume, improving the reaction rate, and thus improving the equipment productivity.

[0082] In response to the process flow being a chamber cleaning flow, the pumping base pipe 310 is rotated by a second angle to increase the opening of the communication port between the fourth pumping port 330 and the second pumping port 140, and to decrease the opening of the communication port between the third pumping port 320 and the first pumping port 130. When the opening of the communication port between the third pumping port 320 and the second pumping port 140 reaches the target opening, the cleaning gas can be pumped from the bottom of the reaction cavity 110 at least via the second pumping port 140. Preferably, as shown in FIG. 8C, when the pumping base pipe 310 is rotated by a second angle, such as the second angle is 90°, the opening of the communication port between the third pumping port 320 and the second pumping port 140 is the largest, that is, the third pumping port 320 is completely aligned to communicate the second pumping port 140, while the third pumping port 320 is closed to the first pumping port 130, and the cleaning gas is pumped from the bottom of the reaction cavity 110 entirely via the second pumping port 140 (the gas flow direction is shown by the arrow in the figure), which is conducive to accelerating the rate of cleaning gas being pumped away from the edge of the lower part of the heating disc 120, increasing the cleaning area at the bottom of the chamber, improving the cleaning rate, and thus improving the cleaning efficiency.

[0083] Further, in order to improve the uniformity of the pumping in the thin film deposition process and the chamber cleaning process, as shown in FIG. 8B, the sidewall of the reaction chamber 110 is provided with a side pumping ring 111, the first pumping port 130 is connected to the side pumping ring 111, and the side pumping ring 111 surrounds the heating plate 120, for uniformly pumping the gas in the area above the heating plate 120, and the pumping effect is distributed in a circumferential symmetry, and is discharged from the first pumping port 130 through the pumping channel. As shown in FIG. 8C, the bottom of the reaction chamber 110 is provided with a bottom pumping ring 112, the second pumping port 140 is connected to the bottom pumping ring 112, and the bottom pumping ring 112 is located below the heating plate 120, for uniformly pumping the gas in the area below the heating plate 120, and the pumping effect is distributed in a circumferential symmetry, and is discharged from the second pumping port 140 through the pumping channel.

[0084] Although the above-described methods are illustrated and described as a series of acts, it will be appreciated and understood by those skilled in the art that the methods are not limited by the order of the acts as some acts can, in accordance with one or more embodiments, occur simultaneously or in different order or with other acts not depicted and described herein or that can be appreciated by those skilled in the art.

[0085] In summary, the present application provides a pumping mechanism, a semiconductor device processing equipment, a semiconductor device processing method, and a computer readable storage medium, which are simple and practical, low in cost, can improve the pumping rate and uniformity of the gas in the reaction chamber in the semiconductor device processing process, improve the flexibility of the process flow in the processing process, and improve the equipment productivity.

[0086] The foregoing description of the present disclosure has been provided for the purposes of illustrating and describing it and its practical application, various modifications enabling those skilled in the art to carry it out can be made to the present disclosure without departing from its spirit or scope. Thus, the present disclosure is not intended to be limited to the examples and designs described herein, but should be granted the broadest scope consistent with the principles and novel features disclosed herein.

Claims

1. A suction mechanism characterized by, The application comprises: an air extraction base pipe, which moves between a first air extraction port located on the side wall of a reaction chamber and a second air extraction port located on the bottom of the reaction chamber, wherein a first end of the air extraction base pipe is connected to an air extraction device, and a second end of the air extraction base pipe is provided with at least one third air extraction port, and the third air extraction port is communicated to the first air extraction port and / or the second air extraction port by moving the air extraction base pipe.

2. The air extraction mechanism of claim 1, wherein, The application further comprises: a translation mechanism, which comprises a sliding table module located in a guide rail, one end of the sliding table module is connected to the air extraction base pipe, and the other end of the sliding table module is connected to a driving motor, and the sliding table module slides under the driving of the driving motor to drive the air extraction base pipe to perform a translational motion.

3. The air extraction mechanism of claim 2, wherein, The application further comprises: a first bellows, which is arranged at a first connection between the air extraction base pipe and the translation mechanism, and is used to seal the first connection during the translational motion of the air extraction base pipe; and a second bellows, which is arranged at a second connection between the air extraction base pipe and a fixed base, wherein the air extraction base pipe is connected to the air extraction device via the fixed base, and the second bellows is used to seal the second connection during the translational motion of the air extraction base pipe.

4. The air extraction mechanism of claim 1, wherein, The application further comprises: a rotation mechanism, which comprises a first gear fixed on a support seat, one end of the first gear is in contact with a second gear on the air extraction base, and the other end of the first gear is connected to a driving motor, and the first gear rotates under the driving of the driving motor to drive the second gear to rotate, so as to drive the air extraction base pipe to perform a rotational motion.

5. The air extraction mechanism of claim 4, wherein, The second end of the air extraction base pipe is provided with at least one fourth air extraction port, the height of the third air extraction port corresponds to the position of the first air extraction port of the side wall of the reaction chamber, the height of the fourth air extraction port corresponds to the position of the second air extraction port of the bottom of the reaction chamber, and the third air extraction port and the fourth air extraction port are distributed at an angle of 90°.

6. The air extraction mechanism of claim 4, wherein, The application further comprises: a magnetic fluid, which is arranged at least at a third connection between the air extraction base pipe and the fixed base, wherein the air extraction base pipe is sleeved in the fixed base and connected to the air extraction device via the fixed base, and the magnetic fluid is used to seal the third connection during the rotational motion of the air extraction base pipe.

7. The air extraction mechanism of claim 2 or 4, wherein The application further comprises: a controller, which is configured to: determine target opening degrees of the first air extraction port and the second air extraction port, respectively; 8. The air extraction mechanism of claim 7, wherein, and adjust a translational distance or a rotational angle of the air extraction base pipe based on the target opening degrees of the first air extraction port and the second air extraction port, respectively, so that the third air extraction port in the air extraction base pipe is communicated to the first air extraction port and / or the second air extraction port. The step of determining the target opening degrees of the first air extraction port and the second air extraction port, respectively, comprises: determining the target opening degrees of the first air extraction port and the second air extraction port, respectively, according to a process flow in the reaction chamber; in response to the process flow being a thin film deposition process, determining that the target opening degree of the first air extraction port is greater than the target opening degree of the second air extraction port; and in response to the process flow being a chamber cleaning process, determining that the target opening degree of the second air extraction port is greater than the target opening degree of the first air extraction port.

9. The air extraction mechanism of claim 8, wherein, The step of adjusting the translation distance or the rotation angle of the pumping base pipe based on the target opening degree of the first pumping port and the second pumping port, so that the third pumping port in the pumping base pipe is communicated to the first pumping port and / or the second pumping port, comprises: in response to the process flow being a thin film deposition process, translating the pumping base pipe by a first distance to increase the opening degree of the communication port between the third pumping port and the first pumping port, and to decrease the opening degree of the communication port between the third pumping port and the second pumping port; in response to the opening degree of the communication port between the third pumping port and the first pumping port reaching the target opening degree, pumping process gas from the sidewall of the reaction cavity at least via the first pumping port; or in response to the process flow being a chamber cleaning process, translating the pumping base pipe by a second distance to increase the opening degree of the communication port between the third pumping port and the second pumping port, and to decrease the opening degree of the communication port between the third pumping port and the first pumping port; in response to the opening degree of the communication port between the third pumping port and the second pumping port reaching the target opening degree, pumping cleaning gas from the bottom of the reaction cavity at least via the second pumping port. The step of adjusting the translation distance or the rotation angle of the pumping base pipe based on the target opening degree of the first pumping port and the second pumping port, so that the third pumping port in the pumping base pipe is communicated to the first pumping port and / or the second pumping port, comprises:

10. The air extraction mechanism of claim 8, wherein, in response to the process flow being a thin film deposition process, rotating the pumping base pipe by a first angle to increase the opening degree of the communication port between the third pumping port and the first pumping port, and to decrease the opening degree of the communication port between a fourth pumping port located at the second end of the pumping base pipe and distributed at 90° with the third pumping port and the second pumping port; in response to the opening degree of the communication port between the third pumping port and the first pumping port reaching the target opening degree, pumping process gas from the sidewall of the reaction cavity at least via the first pumping port; or in response to the process flow being a chamber cleaning process, rotating the pumping base pipe by a second angle to increase the opening degree of the communication port between the fourth pumping port and the second pumping port, and to decrease the opening degree of the communication port between the third pumping port and the first pumping port; in response to the opening degree of the communication port between the fourth pumping port and the second pumping port reaching the target opening degree, pumping cleaning gas from the bottom of the reaction cavity at least via the second pumping port. The pumping mechanism comprises:

11. A processing apparatus of a semiconductor device, characterized by comprising: a reaction cavity, the inside of which comprises a heating disc for supporting a wafer and performing a thin film deposition process, wherein a first pumping port is arranged on the sidewall of the reaction cavity, and a second pumping port is arranged on the bottom of the reaction cavity; and the pumping mechanism as claimed in any one of claims 1-10, wherein a third pumping port in the pumping base pipe is adjusted to be communicated to the first pumping port and / or the second pumping port by moving the pumping base pipe in the pumping mechanism. ​ ​ 12. The processing apparatus of claim 11, wherein, The gas extraction mechanism is located between each of the reaction cavities, and the second end of the gas extraction base pipe includes a plurality of third gas extraction ports, and each of the third gas extraction ports in the gas extraction base pipe is communicated to the first gas extraction port and / or the second gas extraction port in each of the reaction cavities by translating the gas extraction base pipe.

13. The processing apparatus of claim 12, wherein The second end of the gas extraction base pipe also includes a plurality of fourth gas extraction ports, wherein the height of each of the third gas extraction ports corresponds to the position of the first gas extraction port of the sidewall of each of the reaction cavities, the height of each of the fourth gas extraction ports corresponds to the position of the second gas extraction port of the bottom of each of the reaction cavities, and the third gas extraction ports and the fourth gas extraction ports are distributed at 90°, and each of the third gas extraction ports and the fourth gas extraction ports in the gas extraction base pipe is respectively communicated to the first gas extraction port and / or the second gas extraction port in each of the reaction cavities by rotating the gas extraction base pipe.

14. A method of processing a semiconductor device, characterized by, The method comprises: respectively determining the target opening degree of the first gas extraction port and the second gas extraction port in each of the reaction cavities in the processing equipment of the semiconductor device as claimed in any one of claims 11 to 13; and adjusting the translation distance or the rotation angle of the gas extraction base pipe in the gas extraction mechanism in the processing equipment of the semiconductor device based on the target opening degree of each of the first gas extraction port and the second gas extraction port, so that each of the third gas extraction ports in the gas extraction base pipe is communicated to the first gas extraction port and / or the second gas extraction port.

15. A computer readable storage medium having stored thereon computer instructions, wherein, The computer instructions are executed by the processor to implement the processing method of the semiconductor device as claimed in claim 14. The computer instructions are executed by the processor to implement the processing method of the semiconductor device as claimed in claim 14.

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