Method for manufacturing power chip sintering module, power chip sintering module and carrier plate fixture

Abstract

The present application relates to the technical field of power chips, and discloses a method for manufacturing a power chip sintering module, a power chip sintering module and a carrier plate fixture. The method comprises: lifting limiting lines on a carrier plate fixture, inserting heat dissipation copper base blocks into mounting slots and releasing the limiting lines; performing OSP processing on the heat dissipation copper base blocks; lifting the limiting lines and removing the heat dissipation copper base blocks from the mounting slots; printing a first silver paste on the bottom of a recess in the top surface of each heat dissipation copper base block; baking to form a first silver paste layer; attaching a power chip to the surface of each first silver paste layer; bonding the power chip to the first silver paste layer; printing a second silver paste on a gate electrode and a source electrode of each power chip respectively; baking to form second silver paste layers; attaching and covering a copper sheet on each of the second silver paste layers; and bonding the copper sheets to the second silver paste layers. The present application has the effects of reducing the difficulty of surface pretreatment of the heat dissipation copper base blocks and improving the reliability of the power chip sintering module.

Description

A power chip sintering module manufacturing method, a power chip sintering module and a carrier plate jig TECHNICAL FIELD

[0001] The present application relates to the technical field of power chips, in particular to a power chip sintering module manufacturing method, a power chip sintering module and a carrier plate jig. BACKGROUND

[0002] At present, the main drive inverter substrate (also known as a power chip) applied to new energy vehicles and the like adopts a sintering mode of embedding the power chip into a groove on the top surface of a heat dissipation copper base, welding the power chip to the bottom of the groove of the heat dissipation copper base through a silver sintering process to manufacture a power chip sintering module, and then encapsulating the power chip sintering module as a whole into the substrate. The sintered silver layer realizes electrical connection between the drain of the power chip and the heat dissipation copper base, ensures that the power chip can work normally, and the heat dissipation copper base can accelerate heat transfer and play a role in rapid heat dissipation due to the good thermal conductivity of the metal copper, so as to prevent the power chip inside the package from accumulating a large amount of heat, the junction temperature of the power chip sintering module is too high, and the reliability of the power chip sintering module and even the whole substrate is affected. However, bare copper is very easy to oxidize in the air, which causes the weldability of the surface of the heat dissipation copper base to decrease sharply, and the bonding force between the nano silver paste and the oxidized copper surface in the sintering process is poor, which can easily cause the interface to crack at high temperature and cause the substrate to fail.

[0003] In the prior art, the industry generally adopts low-cost horizontal production line surface treatment equipment. If a single heat dissipation copper base passes through the horizontal line for surface treatment, it will fall into the chemical tank during the process, which makes it difficult to perform surface pretreatment on the heat dissipation copper base before silver sintering.

[0004] In view of the above related technologies, the inventors have found that the existing power chip sintering module has poor reliability due to the difficulty in surface pretreatment of the heat dissipation copper base. SUMMARY

[0005] In order to improve the reliability of the power chip sintering module, the present application provides a power chip sintering module manufacturing method, a power chip sintering module and a carrier plate jig.

[0006] In a first aspect, the present application provides a power chip sintering module manufacturing method.

[0007] The present application is realized by the following technical solutions:

[0008] A power chip sintering module manufacturing method, comprising the following steps,

[0009] Before sintering, the extensible limiting line on the mounting groove of the carrier plate jig is lifted, the heat dissipation copper base block is inserted into the mounting groove, and the limiting line is loosened, wherein the limiting line is arranged along the diagonal direction of the top surface of the heat dissipation copper base block, the inner bottom of the mounting groove is provided with a limiting area for limiting the heat dissipation copper base block, and the top surface of the heat dissipation copper base block is provided with a groove for accommodating a power chip;

[0010] The top surface of the heat dissipation copper base block on the carrier plate jig is subjected to OSP treatment until a layer of organic coating is attached to the top surface of the heat dissipation copper base block by a chemical method;

[0011] The limiting line is lifted, and the heat dissipation copper base block is removed from the mounting groove;

[0012] The first silver paste is printed on the groove bottom of the top surface of the heat dissipation copper base block;

[0013] The first silver paste is baked to form a first silver paste layer;

[0014] The power chip is attached to the surface of the first silver paste layer;

[0015] High-temperature sintering is performed until the power chip is bonded to the first silver paste layer, and the solvent in the first silver paste layer is completely volatilized, wherein the temperature range during high-temperature sintering is 175-350°C;

[0016] The second silver paste is printed on the gate and source of the power chip, respectively;

[0017] The second silver paste is baked to form a second silver paste layer;

[0018] The copper sheet is attached to each second silver paste layer, and the copper sheet covers the surface of the second silver paste layer;

[0019] High-temperature sintering is performed until the copper sheet is bonded to the second silver paste layer, and the solvent in the second silver paste layer is completely volatilized, wherein the temperature range during high-temperature sintering is 175-350°C.

[0020] In a preferred example, the application can be further configured to adopt the following steps when printing the second silver paste,

[0021] 1-time 3D steel screen printing is performed at a pressure of 10N and a speed of 20mm / s.

[0022] In a preferred example, the application can be further configured to adopt the following steps when baking the second silver paste,

[0023] Baking is performed at a temperature of 140°C for 20min in a pure nitrogen environment.

[0024] The application can be further configured in a preferred example that after the copper sheet covers the surface of the second silver paste layer, the following steps are adopted during high-temperature sintering,

[0025] High-temperature sintering is performed at a temperature of 250°C and a pressure of 16Mpa for 300s by a sintering machine.

[0026] In a second aspect, the application provides a method for manufacturing a sintering module of a power chip.

[0027] The application is achieved by the following technical solutions:

[0028] A method for manufacturing a sintering module of a power chip comprises the following steps,

[0029] Before sintering, a ductile limiting line on a mounting groove of a carrier plate jig is lifted, a heat dissipation copper base block is inserted into the mounting groove, and the limiting line is loosened, wherein the limiting line is arranged along the diagonal direction of the top surface of the heat dissipation copper base block, the inner bottom of the mounting groove is provided with a limiting area for limiting the heat dissipation copper base block, and the top surface of the heat dissipation copper base block is provided with a groove for accommodating a power chip.

[0030] The top surface of the heat dissipation copper base block on the carrier plate jig is subjected to OSP treatment until a layer of organic coating is attached to the top surface of the heat dissipation copper base block by a chemical method.

[0031] The limiting line is lifted, and the heat dissipation copper base block is removed from the mounting groove.

[0032] The groove bottom of the top surface of the heat dissipation copper base block is printed with a first silver paste.

[0033] The first silver paste is baked to form a first silver paste layer.

[0034] A power chip is attached to the surface of the first silver paste layer.

[0035] High-temperature sintering is performed until the power chip is bonded to the first silver paste layer, and the solvent in the first silver paste layer is completely volatilized, wherein the temperature range during high-temperature sintering is 175°C-350°C.

[0036] Silver films are attached to the gate and source of the power chip, respectively.

[0037] Copper sheets are attached to each of the silver films, and the copper sheets cover the surfaces of the silver films.

[0038] High-temperature sintering is performed until the copper sheets are bonded to the silver films, and the solvent in the silver films is completely volatilized, wherein the copper sheets cover the surfaces of the silver films, and the temperature range during high-temperature sintering is 175°C-350°C.

[0039] The application can be further configured in a preferred example as follows when the silver film is attached,

[0040] The patch temperature of the die bonder is set to 130-180℃, the patch pressure is 20N, and the patch speed is 20mm / s.

[0041] The application can be further configured in a preferred example as follows when the copper sheet is sintered at high temperature after being covered on the surface of the silver film,

[0042] Sintering at 250℃ and 16Mpa pressure for 300s by a sintering machine.

[0043] The application can be further configured in a preferred example as follows when the copper sheet is attached,

[0044] The patch temperature is set to 120℃, the patch pressure is 50N, and the patch is attached by the die bonder for 1200ms.

[0045] In a third aspect, the application provides a carrier plate jig.

[0046] The application is realized by the following technical solutions:

[0047] A carrier plate jig applied to any one of the power chip sintering module manufacturing methods, comprising a dielectric layer formed by high-temperature compression of a plurality of prepregs, wherein the temperature range during high-temperature compression is 175-350℃;

[0048] A plurality of mounting grooves are processed on the carrier plate jig, and the size of the mounting grooves is mm level and greater than the size of the heat dissipation copper base block;

[0049] A limiting area is recessed in the central position of the inner bottom of the mounting groove;

[0050] A plurality of first through holes and a plurality of second through holes are drilled on the carrier plate jig at the peripheral position of the mounting groove, the plurality of first through holes are located on the bisector direction of the opposite sides of the mounting groove, the plurality of second through holes are located on the diagonal direction of the mounting groove, the distance value of the first through hole from the groove edge of the mounting groove is equal to the vertical distance value of the second through hole from the groove edge of the adjacent mounting groove, and both the distance value and the vertical distance value are greater than 0;

[0051] A limiting line with ductility is arranged in the second through hole, the limiting line is X-shaped and crosses above the mounting groove, and the head and tail of the limiting line are fixed in the second through hole.

[0052] In a preferred example, the application can be further configured as follows: the number of second through holes is four and is uniformly distributed along the diagonal direction of the mounting groove.

[0053] The application can be further configured in a preferred example that the first through holes are 4 and are evenly distributed along the bisector direction of the opposite sides of the mounting groove.

[0054] The application can be further configured in a preferred example that the limiting area is in a cross shape.

[0055] The application can be further configured in a preferred example that the line head and the line tail of the limiting line are respectively located in two second through holes in the same diagonal direction of the carrier plate jig, and the second through hole is filled with solidified epoxy resin for fixing the line head and the line tail of the limiting line.

[0056] In a fourth aspect, the application provides a power chip sintering module.

[0057] The application is realized by the following technical solutions:

[0058] A power chip sintering module is made by the power chip sintering module manufacturing method, comprising a heat dissipation copper base block, the length of the heat dissipation copper base block is 10-12mm, the width of the heat dissipation copper base block is 10-12mm, the thickness of the heat dissipation copper base block is 1.1-1.3mm, the top surface of the heat dissipation copper base block is provided with a groove, the length of the groove is 8-9mm, the width of the groove is 6-7mm, and the depth of the groove is 0.2-0.3mm.

[0059] A first silver paste layer and a power chip are sequentially arranged from bottom to top at the central position in the groove, the length of the first silver paste layer is 7.0-7.5mm, the width of the first silver paste layer is 5.0-5.5mm, the thickness of the first silver paste layer is 0.02-0.04mm, the length of the power chip is 6.90-6.95mm, the width of the power chip is 4.70-4.75mm, and the thickness of the power chip is 0.1-0.2mm.

[0060] A second silver paste layer is printed on the gate and the source of the power chip, respectively, the second silver paste layer completely covers the gate and the source, the length of the gate is 0.5-0.6mm, the width of the gate is 0.7-0.8mm, there are two sources, the length of the source is 6.1-6.3mm, the width of the source is 2.1-2.3mm, and the thickness of the second silver paste layer is 0.02-0.04mm.

[0061] The second silver paste layer is covered with a copper sheet, and the thickness of the copper sheet is 0.02-0.04mm.

[0062] In a fifth aspect, the application provides a power chip sintering module.

[0063] The application is realized through the following technical solutions:

[0064] A power chip sintering module is made by the power chip sintering module manufacturing method, comprising a heat dissipation copper base block, the length of the heat dissipation copper base block is 10-12mm, the width of the heat dissipation copper base block is 10-12mm, the thickness of the heat dissipation copper base block is 1.1-1.3mm, the top surface of the heat dissipation copper base block is provided with a groove, the length of the groove is 8-9mm, the width of the groove is 6-7mm, and the depth of the groove is 0.2-0.3mm;

[0065] The first silver paste layer and the power chip are sequentially arranged from bottom to top at the central position in the groove, the length of the first silver paste layer is 7.0-7.5mm, the width of the first silver paste layer is 5.0-5.5mm, the thickness of the first silver paste layer is 0.02-0.04mm, the length of the power chip is 6.90-6.95mm, the width of the power chip is 4.70-4.75mm, and the thickness of the power chip is 0.1-0.2mm;

[0066] The gate and the source of the power chip are respectively sintered with a silver film layer, the silver film layer completely covers the gate and the source, the length of the gate is 0.5-0.6mm, the width of the gate is 0.7-0.8mm, there are two sources, the length of the source is 6.1-6.3mm, the width of the source is 2.1-2.3mm, and the thickness of the silver film layer is 0.01-0.03mm;

[0067] The silver film layer is covered with a copper sheet, and the thickness of the copper sheet is 0.02-0.04mm.

[0068] Compared with the prior art, the technical solutions provided by the application have at least the following beneficial effects:

[0069] Before silver sintering, the heat dissipation copper base block is limited in the groove by the carrier plate jig to enable surface treatment of the heat dissipation copper base block. Even if impacted by the spraying chemical water, the heat dissipation copper base block will not fall into the chemical water tank during the travel process, greatly reducing the difficulty of surface pretreatment of the heat dissipation copper base block before silver sintering, enhancing the solderability of the surface of the heat dissipation copper base, reducing the failure of the substrate caused by poor bonding force between the sintered silver paste and the sintered silver paste due to oxidation of the heat dissipation copper base before sintering, and improving the reliability of the power chip sintering module. At the same time, considering that after using the existing silver plating surface pretreatment process, the metal silver will be left on the surface of the heat dissipation copper base and is difficult to remove, the OSP process is used for surface pretreatment of the heat dissipation copper base in the present application. A dense organic coating can be attached to the surface of the heat dissipation copper base block by a chemical method to prevent oxidation of the heat dissipation copper base before silver sintering and ensure the solderability of the surface of the heat dissipation copper base. In the subsequent sintering process, the OSP organic coating will be melted, decomposed and volatilized in a high temperature environment, and copper and silver paste will be re-deposited to further form a firm copper-silver eutectic layer to increase the bonding force and solve the problem of residual metal silver on the surface of the heat dissipation copper base. In addition, the main drive inverter substrate PCB of the embedded power chip needs to form a φ200um copper pillar on the gate and source of the top surface of the power chip by laser drilling process to connect the power chip and the PCB network. However, the back gold layer on the top surface of the power chip is easily broken by laser, which causes damage to the chip circuit below the back gold layer and causes substrate damage. Therefore, silver paste or silver film is printed on the gate and source of the power chip, respectively, and then sintered copper pieces are attached to form laser blind holes on the copper pieces on the gate and source of the sintered power chip to form a copper pillar and a PCB network to realize point signal connection, thereby enhancing the strength of the back gold layer on the top surface of the power chip, reducing the laser breakdown of the back gold layer on the top surface of the power chip, and enhancing the reliability of the power chip sintering module. BRIEF DESCRIPTION OF DRAWINGS

[0070] Figure 1 is a surface pretreatment flowchart of a heat dissipation copper base block of a power chip sintering module manufacturing method provided by an example embodiment of the present application.

[0071] Figure 2 is a top view schematic diagram of the mounting slot, first through hole and second through hole of the carrier plate jig used in a power chip sintering module manufacturing method provided by an example embodiment of the present application.

[0072] Figure 3 is a top view schematic diagram of the overall carrier plate jig used in a power chip sintering module manufacturing method provided by an example embodiment of the present application.

[0073] Figure 4 is a partial physical schematic diagram of the carrier plate jig used in a power chip sintering module manufacturing method provided by an example embodiment of the present application.

[0074] Fig. 5 is a surface pre-treatment diagram of a heat dissipation copper base block of a power chip sintering module manufacturing method according to an example embodiment of the present application.

[0075] Fig. 6 is a sintering flow diagram of a power chip sintering module manufacturing method according to an example embodiment of the present application.

[0076] Fig. 7 is a diagram of a process of enhancing the strength of a back gold layer of a power chip sintering module manufacturing method according to an example embodiment of the present application.

[0077] Fig. 8 is a structural diagram of a power chip sintering module according to an example embodiment of the present application.

[0078] Fig. 9 is a diagram of a process of enhancing the strength of a back gold layer of a power chip sintering module manufacturing method according to another example embodiment of the present application.

[0079] Fig. 10 is a structural diagram of a power chip sintering module according to another example embodiment of the present application. DETAILED DESCRIPTION

[0080] The specific embodiments are only illustrative of the present application, and are not intended to limit the present application. Those skilled in the art can make modifications to the embodiments without creative contribution, and the modifications are within the scope of the present application.

[0081] To make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme of the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative contribution are within the scope of the present application.

[0082] In addition, the term "and / or" in the present application is only to describe the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which means that there are three cases of A alone, A and B together, and B alone. In addition, the character " / " in the present application generally represents an "or" relationship between the associated objects, unless otherwise specified.

[0083] It is found through research that the existing surface treatment equipment, such as silver immersion line and OSP treatment line, is a low-cost horizontal production line, and a single heat dissipation copper base cannot directly pass through the horizontal line for surface treatment because the length and width dimensions of the heat dissipation copper base are, for example, 11mm*11mm*1.2mm, and the row pitch and groove pitch of the horizontal line are generally greater than 10mm, so that the heat dissipation copper base will fall into the chemical tank during the running process if it directly passes through the horizontal line.

[0084] The embodiments of the present application are further described in detail below with reference to the accompanying drawings of the specification.

[0085] Referring to FIG. 1, the present application provides a power chip sintering module manufacturing method, and the main steps of the method are described as follows.

[0086] S1: Before sintering, pick up the extensible limiting line on the mounting groove of the carrier plate jig, and insert the heat dissipation copper base into the mounting groove and loosen the limiting line, wherein the limiting line is arranged along the diagonal direction of the top surface of the heat dissipation copper base, the inner bottom of the mounting groove is provided with a limiting area for limiting the heat dissipation copper base, and the top surface of the heat dissipation copper base is provided with a groove for accommodating a power chip;

[0087] S2: The top surface of the heat dissipation copper base on the carrier plate jig is subjected to OSP treatment until a layer of organic coating is attached to the top surface of the heat dissipation copper base by chemical method;

[0088] S3: Pick up the limiting line, and remove the heat dissipation copper base from the mounting groove;

[0089] Specifically, the clean bare copper surface can be sintered with nano-silver paste to form a firm copper-silver eutectic layer. However, bare copper is very easy to oxidize in the air, which leads to a sharp decrease in the solderability of the heat dissipation copper base surface, and further leads to poor adhesion between the sintered silver paste and the oxidized copper surface, which is prone to delamination. Therefore, the present application performs surface pretreatment on the heat dissipation copper base before silver sintering to prevent the heat dissipation copper base from oxidizing before sintering and causing poor adhesion with the sintered silver paste.

[0090] In addition, the industry generally uses low-cost horizontal production line surface treatment equipment, and if a single heat dissipation copper base passes through the horizontal line for surface treatment, it will fall into the chemical tank during the running process, which makes it difficult to perform surface pretreatment on the heat dissipation copper base before silver sintering. Therefore, in order to realize the surface pretreatment of the heat dissipation copper base, the present application provides a carrier plate jig, which comprises a dielectric layer formed by laminating and high-temperature pressing a plurality of prepregs, and the temperature range during high-temperature pressing is 175℃-350℃.

[0091] Before being shaped, the raw material of the carrier plate jig is double-sided copper-clad plate, wherein the thickness of the upper copper foil / lower copper foil is 12 um, and the dielectric layer is located between the upper copper foil layer and the lower copper foil layer, and the thickness of the dielectric layer is 2.0 mm.

[0092] In this embodiment, the dielectric layer can be formed by laminating 11 pieces of semi-cured sheets of the EM-37B series at a high temperature of 250°C, and the type of glass fiber cloth of the semi-cured sheet is 7628, and the weight percentage of the epoxy resin in the semi-cured sheet is 42±2%.

[0093] After the raw material is cut into small pieces, the surface copper is etched away by acidic etching lines, and the upper copper foil layer and the lower copper foil layer are etched away, and the shaped carrier plate jig is only the dielectric layer in the middle, and the length, width and thickness of the small piece of mainboard material are 250 mm, 250 mm and 2.0 mm respectively, that is, the final length, width and total thickness of the carrier plate jig.

[0094] Referring to FIG. 2, a plurality of mounting grooves are processed on the carrier plate jig, and the size of the mounting groove is mm level and larger than the size of the heat dissipation copper base piece. In this embodiment, 10 rows×10 columns, i.e. 100 mounting grooves are arranged on the carrier plate jig. The mounting grooves are formed by deep processing of CNC numerical control milling machine.

[0095] The length and width of the mounting groove are larger than the length and width of the heat dissipation copper base piece. For example, the length and width of the heat dissipation copper base piece in this embodiment are 11 mm×11 mm, and the length and width of the mounting groove can be designed as 13 mm×13 mm.

[0096] The inner bottom of each mounting groove is concave in the middle position.

[0097] In an embodiment, the limiting area is in the shape of a cross. The limiting area is a cross area with a width of 3.0 mm in the middle. The limiting area can be milled to a remaining thickness of 0.5 mm by CNC numerical control milling machine. At this time, the effective depth of the mounting groove can be designed as 1.5 mm, and the thickness of the heat dissipation copper base piece in this embodiment can be 1.2 mm, so the effective depth of the mounting groove is 0.3 mm more than the thickness of the heat dissipation copper base piece.

[0098] A plurality of first through holes and a plurality of second through holes are drilled on the carrier plate jig at the peripheral position of the mounting groove, a plurality of the first through holes are located in the direction of the bisector of the opposite sides of the mounting groove, a plurality of the second through holes are located in the diagonal direction of the mounting groove, the distance value of the first through hole from the groove edge of the mounting groove is equal to the vertical distance value of the second through hole from the groove edge of the adjacent mounting groove, and the distance value and the vertical distance value are both greater than 0.

[0099] In an embodiment, the number of the second through holes is 4 and is uniformly distributed along the diagonal direction of the mounting groove.

[0100] In an embodiment, the first through holes are 4 in number and are evenly distributed along the bisector direction of opposite sides of the mounting groove.

[0101] In the embodiment, 8 through holes with a diameter of 2.0 mm are drilled on the periphery of each mounting groove. The through holes include first through holes and second through holes. Four first through holes are located on the bisector of opposite sides of the mounting groove, and the minimum distance between the hole edge and the groove edge can be 2.0 mm. The other four second through holes are located on the diagonal of the mounting groove, and the vertical distance from the hole edge to the adjacent two groove edges is also designed to be 2.0 mm.

[0102] Referring to FIG. 3, a limiting line with ductility is arranged in the second through hole. The limiting line is X-shaped and crosses above the mounting groove. The head and tail of the limiting line are fixed in the second through hole.

[0103] In the embodiment, a polytetrafluoroethylene line with a diameter of 0.18 mm is used as the limiting line, which passes through all the second through holes with a diameter of 2.0 mm located on the diagonal of each mounting groove. The polytetrafluoroethylene line is X-shaped and covers the position directly above the mounting groove.

[0104] In an embodiment, the head and tail of the limiting line are located in two second through holes in the same diagonal direction of the carrier plate jig, and the second through holes are filled with cured epoxy resin for fixing the head and tail of the limiting line.

[0105] Specifically, the head and tail of the polytetrafluoroethylene line are located in the 2.0 mm second through holes at the upper left corner and the lower right corner of the carrier plate jig in the figure, respectively. The through holes are filled with plug-in resin (epoxy resin), and then baked at 190°C to cure the resin, so that the head and tail are fixed in the through holes. As shown in FIG. 3, the second through hole filled with epoxy resin is represented by dark gray.

[0106] Referring to FIG. 4, a part of the actual carrier plate jig is shown.

[0107] Through the cooperation of the above carrier plate jig, the surface pretreatment of the heat dissipation copper base block over the horizontal line can be realized. Considering that after silver deposition, metallic silver will be left on the surface of the heat dissipation copper base and is difficult to remove, and the bonding force between the epoxy resin used to encapsulate the power chip sintering module and the metallic silver layer in the product is poor, which will affect the overall reliability of the product, therefore, the silver deposition process is not used in this scheme, and the OSP process is used. The OSP film is not resistant to acid and alkali and high temperature, and has the advantage of being easy to remove. The OSP surface pretreatment of the heat dissipation copper base over the horizontal production line is carried out.

[0108] Referring to FIG. 5, before the silver paste is printed, the extensible limiting line on the mounting groove of the carrier tool is lifted, the heat dissipation copper base block is inserted into the mounting groove, and the limiting line is loosened. The top surface of the heat dissipation copper base block on the carrier tool is subjected to OSP treatment, until a layer of organic coating is attached to the top surface of the heat dissipation copper base block by chemical method, the OSP surface pretreatment of the heat dissipation copper base block is realized, and a layer of dense organic coating is attached to the surface of the heat dissipation copper base block.

[0109] Specifically, the X-shaped polytetrafluoroethylene line on the mounting groove is gently lifted, and the heat dissipation copper base block is inserted into the mounting groove from one side;

[0110] The carrier tool carries the heat dissipation copper base block through the OSP horizontal line, and the OSP medicine is sprayed from the top and bottom of the carrier tool to the heat dissipation copper base block. Due to the limitation of the cross-shaped limiting area at the bottom of the mounting groove and the X-shaped limiting line above the mounting groove, although the heat dissipation copper base block is subjected to the impact force of the sprayed medicine, the heat dissipation copper base block will not run out of the mounting groove, and will not fall into the medicine tank during the running process, preventing the heat dissipation copper base block from falling out of the mounting groove.

[0111] Finally, the X-shaped polytetrafluoroethylene line on the mounting groove is gently lifted, and the heat dissipation copper base block is removed from one side of the mounting groove, and the surface pretreatment of the heat dissipation copper base block is completed.

[0112] In the embodiment, the organic material of the organic coating is imidazole organic crystalline base, so that a layer of dense OSP film is attached to the surface of the heat dissipation copper base block. The OSP film is attached to the surface of the bare copper by chemical method, so as to prevent the heat dissipation copper base block from being oxidized before silver sintering and ensure the solderability of the surface of the heat dissipation copper base block. At the same time, the carrier tool of the present application is used to carry the heat dissipation copper base block for surface pretreatment, which not only reduces the difficulty of surface pretreatment of the heat dissipation copper base block before silver sintering, but also enhances the solderability of the surface of the heat dissipation copper base block. Moreover, the OSP treatment of the heat dissipation copper base block with a length and width of 11 mm is realized, while the existing OSP treatment process can only realize the surface treatment of a board-level product with a length and width of at least 100 mm, and the processing accuracy is greatly improved.

[0113] The heat dissipation copper base block can be subjected to OSP treatment on the horizontal production line. In the subsequent sintering process, the OSP organic coating will be melted, decomposed and volatilized in a high temperature environment, and the copper single element and the silver paste will be re-precipitated to form a firm copper-silver eutectic layer, which has firm bonding force and easy removal advantage.

[0114] Referring to FIG. 6, S4: printing a first silver paste on the recess bottom of the top surface of the heat dissipation copper base block;

[0115] S5: baking the first silver paste to form a first silver paste layer;

[0116] S6: mounting the power chip to the surface of the first silver paste layer;

[0117] S7: high-temperature sintering until the power chip is bonded to the first silver paste layer and the solvent in the first silver paste layer is completely volatilized, wherein the temperature range of the high-temperature sintering is 175-350℃.

[0118] Specifically, the first silver paste is printed and processed to the bottom of the groove of the heat dissipation copper base, and the processing parameters can be set as: 3D steel screen printing, printing 1 time, pressure 10 N, and speed 20 mm / s.

[0119] The printed first silver paste is pre-baked, and nitrogen pre-baking is adopted to remove most of the solvent of the silver paste, and the baking parameters can be set as: pure nitrogen environment, 140℃×20 min.

[0120] Then, the power chip is mounted by a die bonder, the temperature of the mounting can be set as 120℃, the pressure of the mounting can be set as 50 N, and the mounting time by the die bonder is 1200 ms; in the embodiment, the power chip can be a MOSFET chip.

[0121] Finally, high-temperature sintering is performed, after the high-temperature sintering by a sintering machine, the power chip and the first silver paste are completely bonded together, and the solvent in the first silver paste is completely volatilized, in the embodiment, the high-temperature sintering is performed by the sintering machine at a temperature of 250℃ and a pressure of 16 Mpa for 300 s.

[0122] In the industry, the top surface of the power chip is usually plated with a nickel / palladium / gold layer, and the nickel / palladium / gold layer is very thin (for example, 3.0 um / 0.2 um / 0.03 um). In addition, the main drive inverter PCB of the embedded power chip needs to form a copper column with a diameter of 200 um on the gate and source of the top surface of the chip to connect the chip and the PCB network, and the laser drilling process is usually adopted to achieve this. In this process, the top surface of the power chip is easily broken by the laser, and the chip circuit under the nickel / palladium / gold layer is damaged, resulting in damage of the chip. In addition, the nickel / palladium / gold surface has poor adhesion with the existing epoxy resin on the sintering module of the power chip, and the interface is easily cracked at high temperature, resulting in failure of the substrate.

[0123] To solve the problem that the nickel / palladium / gold layer on the top surface of the chip is easily broken and damaged in the laser drilling process and affects the reliability, the embodiment of the application further provides two new methods for manufacturing a power chip sintering module.

[0124] Referring to FIG. 7, S811: printing a second silver paste on the gate and source of the power chip, respectively;

[0125] S812: baking the second silver paste to form a second silver paste layer;

[0126] S813: mounting a copper sheet on each of the second silver paste layers, the copper sheet covering the surface of the second silver paste layer;

[0127] S814: high-temperature sintering until the copper sheet is bonded to the second silver paste layer and the solvent in the second silver paste layer is completely volatilized, wherein the temperature range during high-temperature sintering is 175-350°C.

[0128] In an embodiment, when printing the second silver paste, the following steps are adopted,

[0129] 1-time 3D steel screen printing is performed at a pressure of 10 N and a speed of 20 mm / s.

[0130] In an embodiment, when baking the second silver paste, the following steps are adopted,

[0131] Baking is performed at a temperature of 140°C for 20 min in a pure nitrogen environment.

[0132] In an embodiment, when the copper sheet covers the surface of the second silver paste layer, the following steps are adopted during high-temperature sintering,

[0133] High-temperature sintering is performed by a sintering machine at a temperature of 250°C and a pressure of 16 MPa for 300 s.

[0134] In an embodiment, when mounting the copper sheet, the following steps are adopted,

[0135] Mounting is performed by a die bonder at a die bonding temperature of 120°C and a die bonding pressure of 50 N for 1200 ms.

[0136] Specifically, the second silver paste is printed and processed onto the gate and source of the power chip, and the parameters can be set as 3D steel screen printing, 1-time printing, a pressure of 10 N, and a speed of 20 mm / s.

[0137] The second silver paste is pre-baked, and nitrogen is used for pre-baking to remove most of the solvent of the second silver paste, and the baking parameters can be set as a pure nitrogen environment, 140°C x 20 min.

[0138] The copper sheet is transferred and mounted onto the second silver paste by a die bonder, the die bonding temperature can be 120°C, the die bonding pressure can be 50 N, and the mounting time is 1200 ms.

[0139] Finally, after high-temperature sintering by the sintering machine, the copper sheet and the second silver paste are completely bonded together, and the solvent in the second silver paste is completely volatilized. The environmental parameters can be set to a temperature of 250 DEG C and a pressure of 16 MPa, and the high-temperature sintering is performed for 300 s, thereby completing the manufacturing process of the power chip sintering module with double-layer silver paste sintering. The manufacturing process can improve the problem that the top surface gold layer of the power chip is easily broken by laser and thus damaged, and the chip circuit under the gold layer is damaged, thereby causing the chip to be damaged. Meanwhile, the nickel / palladium / gold surface has strong bonding force with the epoxy resin on the power chip sintering module, and the overall reliability is better.

[0140] The embodiment of the present application also provides a power chip sintering module, which is manufactured by using any one of the power chip sintering module manufacturing methods in the above embodiments. The power chip sintering module comprises a heat dissipation copper base block. The length of the heat dissipation copper base block is 10-12 mm, the width of the heat dissipation copper base block is 10-12 mm, and the thickness of the heat dissipation copper base block is 1.1-1.3 mm. A groove is arranged on the top surface of the heat dissipation copper base block. The length of the groove is 8-9 mm, the width of the groove is 6-7 mm, and the depth of the groove is 0.2-0.3 mm.

[0141] A first silver paste layer and a power chip are sequentially arranged from bottom to top at the central position in the groove. The length of the first silver paste layer is 7.0-7.5 mm, the width of the first silver paste layer is 5.0-5.5 mm, and the thickness of the first silver paste layer is 0.02-0.04 mm. The length of the power chip is 6.90-6.95 mm, the width of the power chip is 4.70-4.75 mm, and the thickness of the power chip is 0.1-0.2 mm.

[0142] Second silver paste layers are respectively printed on the gate and the source of the power chip. The second silver paste layers completely cover the gate and the source. The length of the gate is 0.5-0.6 mm, the width of the gate is 0.7-0.8 mm, there are two sources, the length of the source is 6.1-6.3 mm, the width of the source is 2.1-2.3 mm, and the thickness of the second silver paste layer is 0.02-0.04 mm.

[0143] Copper sheets are arranged on the second silver paste layers. The thickness of the copper sheet is 0.02-0.04 mm.

[0144] Referring to FIG. 8, specifically, the length x width of the heat dissipation copper base block is 11 x 11 mm, the thickness is 1.2 mm, and the top surface of the copper sheet is designed as a rectangular groove with a length x width of 8.44 x 6.24 mm and a depth of 0.21 mm.

[0145] The first silver paste, the MOSFET chip, the second silver paste, and the copper sheet are sequentially arranged from bottom to top in the groove.

[0146] The thickness of the first silver paste layer is 30 μm, and the screen printing area of the silver paste is 7.3*5.0 mm.

[0147] The MOSFET chip has a length* width of 6.94*4.74 mm and a thickness of 0.1 mm. The gate-source-drain design is one gate (Gate) size = 519*701 μm, located on the top surface, and the back gold material is nickel / palladium / gold (3.0 μm / 0.2 μm / 0.03 μm). Two sources (Source) size = 6227*2226 μm, located on the top surface, and the back gold material is nickel / palladium / gold (3.0 μm / 0.2 μm / 0.03 μm). One drain (Drain) size = 5100*5100 μm, located on the bottom surface, and the back gold material is titanium / nickel / silver (0.1 μm / 0.3 μm / 1 μm).

[0148] The second silver paste layer has a thickness of 30 μm, and there are three second silver paste layers in total. One of the second silver paste layers is located on the gate of the power chip, and has a length* width of 519*701 μm, i.e., the size is equal to that of the gate. The other two second silver paste layers are respectively located on the two sources of the power chip, and have a length* width of 6227*2226 μm, i.e., the size is equal to that of the source.

[0149] The copper sheet has a thickness of 30 μm, and there are three copper sheets in total. One of the copper sheets is located on the gate of the power chip, and has a length* width of 499*681 μm, i.e., the size is 10 μm smaller than that of the gate on one side. The other two copper sheets are respectively located on the two sources of the power chip, and have a length* width of 6207*2206 μm, i.e., the size is 10 μm smaller than that of the source on one side.

[0150] The above power chip sintering module can process laser blind holes on the copper sheets on the sintered chip gate and source, and then form copper columns to realize point signal connection with the PCB network.

[0151] The application also provides a power chip sintering module manufacturing method. The main steps of the method are described as follows.

[0152] Before sintering, the extensible limiting line on the mounting groove of the carrier plate jig is lifted, the heat dissipation copper base block is inserted into the mounting groove, and the limiting line is loosened. The limiting line is arranged along the diagonal direction of the top surface of the heat dissipation copper base block. The inner bottom of the mounting groove is provided with a limiting area for limiting the heat dissipation copper base block. The top surface of the heat dissipation copper base block is provided with a groove for accommodating the power chip.

[0153] The top surface of the heat dissipation copper base block on the carrier plate jig is subjected to OSP treatment, until a layer of organic coating is attached to the top surface of the heat dissipation copper base block by a chemical method.

[0154] The limiting line is lifted, and the heat dissipation copper base block is removed from the mounting groove.

[0155] printing a first silver paste on the bottom of the groove of the top surface of the copper base block;

[0156] baking the first silver paste to form a first silver paste layer;

[0157] attaching a power chip to the surface of the first silver paste layer;

[0158] high-temperature sintering until the power chip is bonded to the first silver paste layer and the solvent in the first silver paste layer is completely volatilized, wherein the temperature range during high-temperature sintering is 175-350°C;

[0159] Referring to FIG. 9, S821: silver films are attached respectively on the gate and source of the power chip;

[0160] S822: copper pieces are attached on each of the silver films, the copper pieces covering the surface of the silver films;

[0161] S823: high-temperature sintering until the copper pieces are bonded to the silver films, and the solvent in the silver films is completely volatilized, wherein the copper pieces cover the surface of the silver films, and the temperature range during high-temperature sintering is 175-350°C.

[0162] In an embodiment, when the silver films are attached, the following steps are adopted,

[0163] The patch temperature of the die bonder is set to 130-180°C, the patch pressure is 20N, and the patch speed is 20mm / s.

[0164] In an embodiment, after the copper pieces cover the surface of the silver films, the following steps are adopted during high-temperature sintering,

[0165] high-temperature sintering for 300s at a temperature of 250°C and a pressure of 16Mpa by using a sintering machine.

[0166] In an embodiment, when the copper pieces are attached, the following steps are adopted,

[0167] The patch temperature is set to 120°C, the patch pressure is 50N, and the copper pieces are attached by using a die bonder for 1200ms.

[0168] Specifically, after the top surface of the copper base block is processed by OSP, the processing flow of the power chip sintering module of the silver paste sintering chip + silver film sintering copper piece is as follows:

[0169] 1. First silver paste printing: the first silver paste is processed to the bottom of the groove of the copper base block, and the processing parameters are 3D steel screen printing, printing once, pressure 10N, and speed 20mm / s;

[0170] 2, the first silver paste pre-baking, nitrogen pre-baking to remove most of the solvent of the silver paste (pure nitrogen environment, 140℃×20min);

[0171] 3, the transfer chip, the chip is attached to the first silver paste by die bonder (patch temperature 120℃, patch pressure 50N, 1200ms);

[0172] 4, high temperature sintering, after sintering machine high temperature sintering, the chip and the first silver paste are completely bonded together, and the solvent in the first silver paste is completely volatilized (250℃×16Mpa×300s);

[0173] 5, transfer silver film, silver film is sucked by die bonder and then transferred to the gate and source of the chip (130℃, pressure 20N, speed 20mm / s);

[0174] 6, transfer copper sheet, the copper sheet is attached to the silver film by die bonder (patch temperature 120℃, patch pressure 50N, 1200ms);

[0175] 8, high temperature sintering, after sintering machine high temperature sintering, the copper sheet and the silver film are completely bonded together, and the solvent in the silver film is completely volatilized (250℃×16Mpa×300s)。

[0176] It should be understood that the size of the serial number of each step in the above embodiment does not mean the order of execution, and the execution order of each process should be determined according to its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the application.

[0177] The embodiment of the application also provides a power chip sintering module, which is made by any one of the power chip sintering module manufacturing methods in the above embodiment, comprising a heat dissipation copper base block, the length of the heat dissipation copper base block is 10-12mm, the width of the heat dissipation copper base block is 10-12mm, the thickness of the heat dissipation copper base block is 1.1-1.3mm, the top surface of the heat dissipation copper base block is provided with a groove, the length of the groove is 8-9mm, the width of the groove is 6-7mm, and the depth of the groove is 0.2-0.3mm.

[0178] The first silver paste layer and the power chip are sequentially arranged in the central position of the groove from bottom to top, the length of the first silver paste layer is 7.0-7.5mm, the width of the first silver paste layer is 5.0-5.5mm, the thickness of the first silver paste layer is 0.02-0.04mm, the length of the power chip is 6.90-6.95mm, the width of the power chip is 4.70-4.75mm, and the thickness of the power chip is 0.1-0.2mm.

[0179] The gate and the source of the power chip are respectively sintered with a silver film layer, the silver film layer completely covers the gate and the source, the length of the gate is 0.5-0.6mm, the width of the gate is 0.7-0.8mm, the source has two, the length of the source is 6.1-6.3mm, the width of the source is 2.1-2.3mm, and the thickness of the silver film layer is 0.01-0.03mm.

[0180] The silver film layer is covered with a copper sheet, and the thickness of the copper sheet is 0.02-0.04mm.

[0181] Referring to FIG. 10, specifically, the length x width of the heat dissipation copper base block is 11x11mm, and the thickness is 1.2mm. A rectangular groove with a length x width of 8.44x6.24mm and a depth of 0.2mm is designed on the top surface of the heat dissipation copper base block.

[0182] The first silver paste, the MOSFET chip, the silver film and the copper sheet are sequentially arranged from bottom to top in the groove.

[0183] The thickness of the first silver paste layer is 30μm, and the screen printing area of the silver paste is 7.3x5.0mm.

[0184] The length x width of the MOSFET chip is 6.94x4.74mm, and the thickness is 0.1mm. The gate-source-drain is designed as: the gate size = 519x701μm, 1, located on the top surface, and the back gold material is nickel / palladium / gold (3.0μm / 0.2μm / 0.03μm); the source size = 6227x2226μm, 2, located on the top surface, and the back gold material is nickel / palladium / gold (3.0μm / 0.2μm / 0.03μm); and the drain size = 5100x5100μm, 1, located on the bottom surface, and the back gold material is titanium / nickel / silver (0.1μm / 0.3μm / 1μm).

[0185] The thickness of the silver film layer before sintering is 65um, and the thickness after sintering is 20μm. There are three silver film layers, one of which is located on the gate of the chip, with a length x width of 519x701μm, i.e. the size is equal to that of the gate; and the other two silver film layers are respectively located on the two sources, with a length x width of 6227x2226μm, i.e. the size is equal to that of the source. By using the sintered silver film, the coverage of the gate and the source of the power chip is more dense, and the thickness of the silver film layer is smaller than that of the first silver paste layer, which is more conducive to the integrated design of the chip.

[0186] The thickness of the copper sheet is 30μm, and there are three copper sheets, one of which is located on the gate of the chip, with a length x width of 499x681μm, i.e. the size is 10μm smaller than that of the single side of the gate; and the other two copper sheets are respectively located on the two sources, with a length x width of 6207x2206μm, i.e. the size is 10μm smaller than that of the single side of the source.

[0187] The power chip sintering module can process laser blind holes on the copper sheet on the sintered chip gate and source, and then form a copper column to realize point signal connection with the PCB network.

[0188] Further, the new power chip sintering module in the present application is embedded into the substrate, and the power chip sintering module is encapsulated into the substrate as a whole.

[0189] The power chip is located in the groove on the top surface of the heat dissipation copper base block. The gate and source on the top surface of the power chip are interconnected between the L2 layer of the PCB and the φ200um copper column on the power chip. The drain on the bottom surface of the power chip is welded to the copper base through the sintered silver layer, and then the φ200um copper column on the back surface of the heat dissipation copper base realizes the electrical signal and heat conduction between the chip drain and the PCB; the copper base serves as a good conductor of heat to accelerate heat dissipation, and the sintered silver layer realizes the electrical performance connection and rapid heat conduction between the chip drain and the heat dissipation copper base, and then the heat is accelerated to be transmitted to the water-cooled radiator on the L6 layer of copper through the path of "power chip→sintered silver layer→heat dissipation copper base→L4 / 5 layer dense blind hole→L5 layer copper→L5 / 6 layer dense blind hole→L6 layer copper", so as to achieve the purpose of improving the large accumulation of heat of the power chip in the package, the high junction temperature of the product, and the overall reliability of the product.

[0190] The embodiment of the present application also provides a new surface treatment scheme before packaging of the power chip sintering module, that is, the sintered power chip sintering module is manually placed in the cavity of the OSP carrier jig, and the X-shaped polytetrafluoroethylene line on the cavity plays a role in preventing the power chip sintering module from being knocked out of the cavity when passing through the horizontal brown line; because the OSP film on the surface of the heat dissipation copper base block itself is not resistant to acid and alkali, when passing through the brown line, the multiple chemical tanks of the brown line all contain sulfuric acid components, and the sulfuric acid can directly clean the OSP film, so that a layer of polar copper organic complex is formed on the surface of the heat dissipation copper base block and the copper sheet at the same time of cleaning the OSP film on the surface of the heat dissipation copper base block, the copper organic complex is produced by chemical reaction of the brown chemical and the bare copper surface, the thickness is molecular level and can be almost ignored, the coverage area is 100% of the coverage area of the bare copper surface on the heat dissipation copper base and the chip, solves the problem of poor adhesion between the OSP film and the epoxy resin, reduces the overall reliability of the substrate product, and greatly improves the surface roughness of the copper sheet.

[0191] The polar brown copper surface after packaging is combined with the polar resin, which significantly improves the interfacial adhesion and ensures the product reliability.

[0192] In summary, a power chip sintering module manufacturing method can perform surface treatment on the heat dissipation copper base block by limiting the heat dissipation copper base block in the groove by means of the carrier board jig before silver sintering. Even if impacted by the spraying of chemical water, the heat dissipation copper base block will not fall into the chemical water tank during the movement process, greatly reducing the difficulty of surface pretreatment of the heat dissipation copper base block before silver sintering, enhancing the weldability of the heat dissipation copper base surface, reducing the failure of the substrate caused by poor bonding force between the sintered silver paste and the oxidized heat dissipation copper base block before sintering, and improving the reliability of the power chip sintering module. At the same time, considering that after using the existing silver deposition surface pretreatment process, the metal silver will be difficult to remove on the surface of the heat dissipation copper base, the OSP process is used to perform surface pretreatment on the heat dissipation copper base in the present application. A dense organic coating can be attached to the surface of the heat dissipation copper base block by chemical method, preventing the heat dissipation copper base from oxidizing before silver sintering, ensuring the weldability of the surface of the heat dissipation copper base, and in the subsequent sintering process, the OSP organic coating will be melted, decomposed and volatilized in a high temperature environment, and the copper element and silver paste will be re-deposited, further forming a firm copper-silver eutectic layer to increase the bonding force, and also solving the problem of residual metal silver on the surface of the heat dissipation copper base. In addition, the main drive inverter substrate PCB embedded with power chips needs to form a φ200um copper pillar on the gate and source of the top surface of the power chip by means of laser drilling process to conduct the power chip and the PCB network. However, the back gold layer on the top surface of the power chip is easily broken by laser, causing damage to the chip circuit below the back gold layer and causing substrate damage. Therefore, silver paste or silver film is printed on the gate and source of the power chip, respectively, and then sintered copper sheet is attached, to process laser blind holes on the copper sheet on the gate and source of the sintered power chip, form a copper pillar and PCB network to realize point signal connection, enhance the strength of the back gold layer on the top surface of the power chip, reduce the laser breakdown of the back gold layer on the top surface of the power chip, and enhance the reliability of the power chip sintering module.

[0193] A power chip sintering module manufacturing method performs OSP treatment before silver sintering of the heat dissipation copper base, forms a dense organic coating on the surface of the copper base, prevents the copper base from oxidizing before silver sintering, and ensures the weldability of the surface of the copper base.

[0194] The design of the carrier board jig limits the movement range of each heat dissipation copper base block in the installation groove, effectively preventing the copper base from escaping and falling into the chemical water tank due to the impact of the spraying of chemical water, and realizing the operability of the heat dissipation copper base with a length x width size of millimeter level passing through the OSP horizontal line.

[0195] The composition of the carrier board jig main plate uses glass fiber cloth, epoxy resin and polytetrafluoroethylene wire, which are all materials resistant to strong acid and strong base, and can pass through the OSP horizontal line infinitely without being corroded. Therefore, it can be recycled without limit, which is energy-saving and environmentally friendly, and reduces the manufacturing cost.

[0196] The embedded new power sintering module substrate, a φ200μm blind hole is punched on a copper sheet with a thickness of 30μm instead of a traditional power chip nickel / palladium / gold (3.0μm / 0.2μm / 0.03μm) back gold layer, which can effectively prevent the chip circuit under the back gold layer from being damaged by breakdown, and avoid the poor bonding force caused by the direct contact between the nickel / palladium / gold (3.0μm / 0.2μm / 0.03μm) back gold layer on the top surface of the power chip and the substrate epoxy resin, thereby improving the product reliability.

[0197] The power chip sintering module is horizontally passed through a brown oxidation line by using an OSP fixture, the OSP film on the copper-based surface is removed, the surface of the module is brown oxidized, and the method for improving the reliability of the substrate is provided.

[0198] Those skilled in the art can clearly understand that, for the convenience and brevity of description, only the division of the above functional units and modules is exemplified, and in actual application, the above functions can be completed by different functional units and modules according to needs, that is, the internal structure of the system is divided into different functional units or modules to complete all or part of the functions described above.

Claims

A method for manufacturing a sintering module of a power chip, characterized in that, It comprises the following steps, Before sintering, the extensible limiting line on the mounting groove of the carrier plate jig is lifted, the heat dissipation copper base block is inserted into the mounting groove, and the limiting line is loosened, wherein the limiting line is arranged along the diagonal direction of the top surface of the heat dissipation copper base block, the inner bottom of the mounting groove is provided with a limiting area for limiting the heat dissipation copper base block, and the top surface of the heat dissipation copper base block is provided with a groove for accommodating the power chip; The top surface of the heat dissipation copper base block on the carrier plate jig is subjected to OSP treatment until a layer of organic coating is attached to the top surface of the heat dissipation copper base block by chemical method; The limiting line is lifted, and the heat dissipation copper base block is removed from the mounting groove; The first silver paste is printed on the groove bottom of the top surface of the heat dissipation copper base block; The first silver paste is baked to form a first silver paste layer; The power chip is attached to the surface of the first silver paste layer; High-temperature sintering is performed until the power chip is bonded to the first silver paste layer, and the solvent in the first silver paste layer is completely volatilized, wherein the temperature range during high-temperature sintering is 175-350℃; The second silver paste is printed on the gate and source of the power chip respectively; The second silver paste is baked to form a second silver paste layer; The copper sheet is attached to each second silver paste layer, and the copper sheet covers the surface of the second silver paste layer; High-temperature sintering is performed until the copper sheet is bonded to the second silver paste layer, and the solvent in the second silver paste layer is completely volatilized, wherein the temperature range during high-temperature sintering is 175-350℃. The method for manufacturing a power chip sintering module according to claim 1, characterized in that, When printing the second silver paste, the following steps are adopted, 1 time of 3D steel screen printing is performed at a pressure of 10N and a speed of 20mm / s. The method for manufacturing a power chip sintering module according to claim 1, wherein, When baking the second silver paste, the following steps are adopted, Baking is performed at a temperature of 140℃ for 20min in a pure nitrogen environment. The method for manufacturing a power chip sintering module according to claim 1, wherein, When high-temperature sintering after the copper sheet covers the surface of the second silver paste layer, the following steps are adopted, High-temperature sintering is performed by a sintering machine at a temperature of 250℃ and a pressure of 16Mpa for 300s. A method for manufacturing a sintering module of a power chip, characterized in that, It comprises the following steps, Before sintering, the extensible limiting line on the mounting groove of the carrier plate jig is lifted, the heat dissipation copper base block is inserted into the mounting groove, and the limiting line is loosened, wherein the limiting line is arranged along the diagonal direction of the top surface of the heat dissipation copper base block, the inner bottom of the mounting groove is provided with a limiting area for limiting the heat dissipation copper base block, and the top surface of the heat dissipation copper base block is provided with a groove for accommodating the power chip; The top surface of the heat dissipation copper base block on the carrier plate jig is subjected to OSP treatment until a layer of organic coating is attached to the top surface of the heat dissipation copper base block by chemical method; The limiting line is lifted, and the heat dissipation copper base block is removed from the mounting groove; The first silver paste is printed on the groove bottom of the top surface of the heat dissipation copper base block; The first silver paste is baked to form a first silver paste layer; The power chip is attached to the surface of the first silver paste layer; High-temperature sintering is performed until the power chip is bonded to the first silver paste layer, and the solvent in the first silver paste layer is completely volatilized, wherein the temperature range during high-temperature sintering is 175-350℃; The silver film is attached to the gate and source of the power chip respectively; A copper sheet is attached on each of the silver films, and the copper sheet covers the surface of the silver film; High-temperature sintering is performed until the copper sheet is bonded to the silver film and the solvent in the silver film is completely volatilized, wherein the temperature range during high-temperature sintering is 175-350°C. The method according to claim 5, wherein When attaching the silver film, the following steps are adopted, The patch temperature of the die bonder is set to 130-180°C, the patch pressure is 20N, and the patch speed is 20mm / s. The method for manufacturing a power chip sintering module according to claim 5, characterized in that, After the copper sheet covers the surface of the silver film, the following steps are adopted during high-temperature sintering, High-temperature sintering is performed at a temperature of 250°C and a pressure of 16Mpa for 300s by using a sintering machine. The method according to claim 1 or 5, wherein When attaching the copper sheet, the following steps are adopted, The patch temperature is set to 120°C, the patch pressure is 50N, and the copper sheet is attached by using a die bonder for 1200ms. A carrier plate jig characterized by, The power chip sintering module manufacturing method of any one of claims 1-8 is applied, and the medium layer is formed by high-temperature compression of a plurality of prepregs, wherein the temperature range during high-temperature compression is 175-350°C; A plurality of mounting grooves are processed on the carrier tooling, and the size of the mounting grooves is in the millimeter level and is greater than the size of the heat dissipation copper base block; A limiting area is recessed in the central position of the inner bottom of the mounting groove; A plurality of first through holes and a plurality of second through holes are drilled on the carrier tooling at the peripheral position of the mounting groove, the first through holes are located on the bisector direction of the opposite sides of the mounting groove, the second through holes are located on the diagonal direction of the mounting groove, the distance value of the first through hole from the groove edge of the mounting groove is equal to the vertical distance value of the second through hole from the groove edge of the adjacent mounting groove, and both the distance value and the vertical distance value are greater than 0; A limiting line with ductility is arranged in the second through hole, the limiting line is X-shaped and crosses above the mounting groove, and the head and tail of the limiting line are fixed in the second through hole. The carrier plate jig according to claim 9, wherein The number of the second through holes is four and is uniformly distributed along the diagonal direction of the mounting groove. The carrier plate jig according to claim 9, wherein The number of the first through holes is four and is uniformly distributed along the bisector direction of the opposite sides of the mounting groove. The carrier plate jig according to claim 9, wherein The limiting area is cross-shaped. The carrier plate jig according to claim 9, wherein The head and tail of the limiting line are respectively located in two second through holes in the same diagonal direction of the carrier tooling, and the second through hole is filled with cured epoxy resin for fixing the head and tail of the limiting line. A power chip sintering module is characterized in that, The power chip sintering module manufacturing method of claim 1 is adopted, and the heat dissipation copper base block has a length of 10-12mm, a width of 10-12mm, and a thickness of 1.1-1.3mm, and a groove is arranged on the top surface of the heat dissipation copper base block, the groove has a length of 8-9mm, a width of 6-7mm, and a depth of 0.2-0.3mm; The first silver paste layer is arranged in the middle of the groove, and a power chip is sequentially arranged above the first silver paste layer; the length of the first silver paste layer is 7.0-7.5 mm, the width of the first silver paste layer is 5.0-5.5 mm, the thickness of the first silver paste layer is 0.02-0.04 mm, the length of the power chip is 6.90-6.95 mm, the width of the power chip is 4.70-4.75 mm, and the thickness of the power chip is 0.1-0.2 mm; Second silver paste layers are respectively printed on the gate and the source of the power chip, and the second silver paste layers completely cover the gate and the source; the length of the gate is 0.5-0.6 mm, the width of the gate is 0.7-0.8 mm, there are two sources, the length of the source is 6.1-6.3 mm, the width of the source is 2.1-2.3 mm, and the thickness of the second silver paste layer is 0.02-0.04 mm; Copper sheets are respectively arranged on the second silver paste layers, and the thickness of the copper sheets is 0.02-0.04 mm. A power chip sintering module is characterized in that, The power chip sintering module is prepared by the power chip sintering module manufacturing method of claim 5, and comprises a heat dissipation copper base block; the length of the heat dissipation copper base block is 10-12 mm, the width of the heat dissipation copper base block is 10-12 mm, the thickness of the heat dissipation copper base block is 1.1-1.3 mm, a groove is arranged on the top surface of the heat dissipation copper base block, the length of the groove is 8-9 mm, the width of the groove is 6-7 mm, and the depth of the groove is 0.2-0.3 mm; The first silver paste layer is arranged in the middle of the groove, and a power chip is sequentially arranged above the first silver paste layer; the length of the first silver paste layer is 7.0-7.5 mm, the width of the first silver paste layer is 5.0-5.5 mm, the thickness of the first silver paste layer is 0.02-0.04 mm, the length of the power chip is 6.90-6.95 mm, the width of the power chip is 4.70-4.75 mm, and the thickness of the power chip is 0.1-0.2 mm; Silver film layers are respectively sintered on the gate and the source of the power chip, and the silver film layers completely cover the gate and the source; the length of the gate is 0.5-0.6 mm, the width of the gate is 0.7-0.8 mm, there are two sources, the length of the source is 6.1-6.3 mm, the width of the source is 2.1-2.3 mm, and the thickness of the silver film layer is 0.01-0.03 mm; Copper sheets are respectively arranged on the silver film layers, and the thickness of the copper sheets is 0.02-0.04 mm.

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