Method for forming capacitor

Abstract

The present invention provides a method for forming a capacitor, the method comprising the steps of: forming a first electrode layer, containing titanium nitride (TiN), on a substrate; forming a first barrier layer, containing titanium oxynitride (TiON), on the first electrode layer; and forming a dielectric layer, containing titanium oxide (TiO), on the first barrier layer.

Description

How to form a capacitor

[0001] The present invention relates to a method for forming a capacitor.

[0002] As the size of electronic components used in various electronic devices, including semiconductors and displays, continues to shrink and the demand for higher efficiency grows, the need for securing the required capacitor capacity is increasing. Accordingly, to secure capacitor capacity, the use of so-called high-k materials is on the rise.

[0003] However, even when forming a capacitor using high-k materials, in the case of miniaturized capacitors, the thickness of the dielectric layer may be reduced if the materials diffuse through the interface between the electrode layers and the dielectric layer. This may lead to a problem of reduced capacitor capacity.

[0004] The present invention is designed to overcome the aforementioned problems, and aims to provide a method for forming a capacitor that minimizes material diffusion through an interface formed between electrode layers and a dielectric layer, thereby minimizing a reduction in the thickness of the dielectric layer.

[0005] Furthermore, the present invention provides a method for forming a capacitor, comprising: forming a first electrode layer comprising titanium nitride on a substrate; forming a first barrier layer comprising titanium oxynitride on the first electrode layer; and forming a dielectric layer comprising titanium oxide on the first barrier layer, wherein the forming of the first barrier layer comprising titanium oxynitride comprises forming a first plasma containing oxygen on the first electrode layer comprising titanium nitride.

[0006] Furthermore, the present invention provides a method for forming a capacitor, wherein the first plasma containing oxygen includes one or more of nitrous oxide, oxygen, and ozone.

[0007] Furthermore, the present invention provides a method for forming a capacitor, further comprising the step of forming a second barrier layer containing titanium oxynitride on the dielectric layer.

[0008] Furthermore, the present invention provides a method for forming a capacitor using an atomic layer deposition method in the step of forming the second barrier layer.

[0009] Furthermore, the present invention provides a method for forming a capacitor, wherein the step of forming the second barrier layer includes the steps of: spraying a second source material containing titanium on the upper surface of the dielectric layer; spraying a second reactant material containing oxygen on the upper surface of the dielectric layer; and spraying a second reactant material containing nitrogen on the upper surface of the dielectric layer.

[0010] Furthermore, the present invention provides a method for forming a capacitor, further comprising the step of forming a second electrode layer comprising titanium nitride.

[0011] Furthermore, the present invention provides a method for forming a capacitor, comprising: forming a first electrode layer comprising titanium nitride on a substrate; forming a first barrier layer comprising titanium oxynitride on the first electrode; forming a dielectric layer comprising titanium oxide on the first barrier layer, wherein the forming of the first barrier layer comprising titanium oxynitride comprises: spraying a gas comprising titanium onto the substrate; spraying a gas comprising oxygen onto the substrate to form titanium oxide; and spraying a gas comprising nitrogen onto the titanium oxide to form titanium oxynitride.

[0012] Furthermore, the present invention provides a method for forming a capacitor, wherein the oxygen-containing gas includes one or more of nitrous oxide, oxygen, and ozone.

[0013] Furthermore, the present invention provides a method for forming a capacitor, further comprising the step of injecting a gas containing titanium, and the step of forming a second plasma containing one or both of oxygen and nitrogen between the step of injecting the gas containing oxygen and the step of injecting the gas containing nitrogen.

[0014] Furthermore, the present invention provides a method for forming a capacitor, further comprising, after the steps of injecting a gas containing titanium, the step of injecting a gas containing oxygen, and the step of injecting a gas containing nitrogen, the step of forming a third plasma containing one or both of oxygen and nitrogen.

[0015] Furthermore, the present invention provides a method for forming a capacitor on a substrate provided in a chamber, wherein the chamber is connected to a first gas path and a second gas path, the first gas path introduces a gas containing titanium into the chamber, the second gas path introduces a gas of either oxygen or nitrogen into the chamber, and the capacitor forming method described above is performed in the chamber.

[0016] According to the present invention as described above, the following effects are achieved.

[0017] According to one embodiment of the present invention, by forming a barrier layer between an electrode layer and a dielectric layer, it is possible to prevent or minimize problems in which the conductive properties of the electrode layer are lowered or the thickness of the dielectric layer is thinned due to a material diffused through the interface between the electrode layer and the dielectric layer.

[0018] According to one embodiment of the present invention, since the problem of the dielectric layer becoming thinner due to the barrier layer is prevented or minimized, the problem of the capacitor's characteristics, for example, the capacitor's capacity, being reduced can be prevented or minimized.

[0019] According to one embodiment of the present invention, by repeatedly performing the steps of spraying a first source material, spraying a first reactant material, and forming a first plasma to form a gallium nitride layer on a substrate, an electronic device having high electrical conductivity characteristics can be implemented even at a relatively low temperature and with a thin thickness.

[0020] The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below.

[0021] FIG. 1 is a cross-sectional view of a capacitor according to one embodiment of the present invention.

[0022] Figure 2 is a flowchart of a capacitor forming method according to one embodiment of the present invention.

[0023] Figure 3 is a flowchart of a capacitor forming method according to another embodiment of the present invention.

[0024] Figure 4 is a flowchart of a capacitor forming method according to another embodiment of the present invention.

[0025] Figure 5 is a flowchart of a capacitor forming method according to another embodiment of the present invention.

[0026] Figure 6 is a cross-sectional view of a capacitor according to another embodiment of the present invention.

[0027] Figure 7 is a flowchart of a capacitor forming method according to another embodiment of the present invention.

[0028] Figure 8 is a flowchart of a capacitor forming method according to another embodiment of the present invention.

[0029] Figure 9 is a flowchart of a capacitor forming method according to another embodiment of the present invention.

[0030] FIG. 10 is a schematic diagram showing another embodiment of a substrate processing device in which a capacitor forming method according to one embodiment of the present invention is performed.

[0031] Fig. 11 is a schematic bottom view showing an enlarged view of the injection section of the substrate processing device illustrated in Fig. 10 based on part A of Fig. 10.

[0032] Fig. 12 is a schematic side cross-sectional view showing an enlarged view of the injection section based on part A of Fig. 10 in the substrate processing device illustrated in Fig. 10.

[0033] The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined solely by the scope of the claims.

[0034] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are illustrative and are not limited to the matters illustrated in the drawings. Like reference numerals refer to like components throughout the specification. In addition, in describing the present invention, if a detailed description of a related known technology is judged to unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. When the terms “includes,” “has,” and “consists of” are used in this specification, other parts may be added unless “only” is used. When a component is expressed in the singular, it includes a case where the plural is included unless there is a specifically explicit description.

[0035] When interpreting a component, it is interpreted as including the error range even if there is no separate explicit description.

[0036] When describing a positional relationship, for example, when the positional relationship between two parts is described as 'on top of', 'upper part of', 'lower part of', 'next to', etc., one or more other parts may be located between the two parts, unless 'right away' or 'directly' is used.

[0037] When describing a temporal relationship, for example, when the temporal continuity is described as 'after', 'following', 'next to', 'before', etc., it can also include cases where it is not continuous, as long as 'right away' or 'directly' is not used.

[0038] While terms like "first" and "second" are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, a "first" component referred to below may also be a "second" component within the technical scope of the present invention.

[0039] The individual features of the various embodiments of the present invention can be partially or wholly combined or combined with each other, and various technical linkages and operations are possible, and each embodiment can be implemented independently of each other or implemented together in a related relationship.

[0040] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the drawings.

[0041] FIG. 1 is a cross-sectional view of a capacitor according to one embodiment of the present invention.

[0042] As can be seen in FIG. 1, a capacitor according to one embodiment of the present invention comprises a substrate (100), a first electrode layer (200a), a first barrier layer (310), a dielectric layer (400), and a second electrode layer (200b).

[0043] The substrate (100) may be any one of silicon (Si), silicon oxide (SiO), and silicon nitride (SiN). The substrate (100) may be a semiconductor wafer, for example, a silicon wafer (Si), but is not limited thereto, and the substrate (100) may also be a glass substrate.

[0044] The above first electrode layer (200a) is formed on the substrate (100).

[0045] The first electrode layer (200a) may be formed of a material containing titanium (Ti). Specifically, the first electrode layer (200a) is formed of titanium nitride (TiN).

[0046] The above first electrode layer (200a) can be formed, for example, using atomic layer deposition (ALD).

[0047] The above first barrier layer (310) is formed on the first electrode layer (200a).

[0048] The first barrier layer (310) may be formed of a material containing titanium (Ti). Specifically, the first barrier layer (310) may be formed of titanium oxynitride (TiON).

[0049] The first barrier layer (310) may be formed, for example, by forming plasma on the upper surface of the first electrode layer (200a), or may be formed on the upper surface of the first electrode layer (200a) using atomic layer deposition (ALD). Meanwhile, the method for forming the first barrier layer (310) will be described in more detail later with reference to FIGS. 2 to 5.

[0050] The first barrier layer (310) may have a thickness thinner than the dielectric layer (400). In this case, the thickness in this specification may be defined as the minimum length between the lower and upper surfaces of each layer.

[0051] According to one embodiment of the present invention, the first barrier layer (310) is formed between the first electrode layer (200a) and the dielectric layer (400), so that oxygen (O) contained in the dielectric layer (400) and nitrogen (N) contained in the first electrode layer (200a) can be prevented or minimized from flowing into different layers during the step of forming the dielectric layer (400). Specifically, the first barrier layer (310) can prevent or minimize oxygen (O) contained in the dielectric layer (400) from flowing into the first electrode layer (200a), and can prevent or minimize nitrogen (N) contained in the first electrode layer (200a) from flowing into the dielectric layer (400).

[0052] Accordingly, it is possible to secure an appropriate thickness for securing the electrical conductivity characteristics of the first electrode layer (200a), and also to prevent the composition of a portion of the dielectric layer (400) adjacent to the first barrier layer (310) from changing. Since this can prevent the thickness of the dielectric layer (400) having a relatively high permittivity from decreasing, the capacitor according to one embodiment of the present invention can secure a high capacitor capacity.

[0053] The above dielectric layer (400) is formed on the first barrier layer (310).

[0054] The dielectric layer (400) may be formed of a material containing titanium (Ti). Specifically, the dielectric layer (400) may be formed of titanium oxide (TiO). According to one embodiment of the present invention, the dielectric layer (400) containing the titanium oxide (TiO) may be a so-called high-K material having a relatively high permittivity. Therefore, the capacitor according to one embodiment of the present invention can secure a high capacitor capacity by the dielectric layer (400) having a relatively high permittivity.

[0055] The second electrode layer (200b) is formed on the dielectric layer (400).

[0056] The second electrode layer (200b) may be formed of a material containing titanium (Ti). Specifically, the second electrode layer (200b) is formed of titanium nitride (TiN).

[0057] The second electrode layer (200b) can be formed, for example, using atomic layer deposition (ALD).

[0058] Figure 2 is a flowchart of a capacitor forming method according to one embodiment of the present invention.

[0059] As can be seen in FIG. 2, a capacitor forming method according to one embodiment of the present invention comprises a first electrode layer forming step (S10), a first barrier layer forming step (S20), a dielectric layer forming step (S30), and a second electrode layer forming step (S40).

[0060] First, a first electrode layer forming step (S10) may be performed on a substrate (see 100 in FIG. 1) provided within a chamber. In this case, the first electrode layer (see 200a in FIG. 1) may be formed on the substrate (see 100 in FIG. 1).

[0061] The above first electrode layer forming step (S10) includes a first source material injection step (S110) and a first reactant material injection step (S120).

[0062] In the first electrode layer forming step (S10), the first electrode layer (see 200a in FIG. 1) may be deposited, for example, using atomic layer deposition (ALD). In this case, the atomic layer deposition (ALD) may use thermal atomic layer deposition (Thermal ALD) or plasma enhanced atomic layer deposition (Plasma Enhanced ALD; PEALD).

[0063] Accordingly, the first source material injection step (S110) and the first reactant material injection step (S120) can be performed in a vacuum chamber, and specifically, a substrate is placed on a susceptor provided at the bottom of the vacuum chamber, and the first source material and the first reactant material are injected through a gas injection port provided at the top of the vacuum chamber to form the first electrode layer (see 200a in FIG. 1) on the upper surface of the substrate (see 100 in FIG. 1).

[0064] When the above-described atomic layer deposition (ALD) method is used, a step (S110) of spraying the first source material onto the substrate (see 100 in FIG. 1) is performed, a step (S120) of spraying the first reactant material is performed, and the step (S110) of spraying the first source material and the step (S120) of spraying the first reactant material can be repeatedly performed in one cycle. In this case, a step of processing a purge gas can be additionally included between each of the steps of spraying the first source material (S110) and the step (S120) of spraying the first reactant material. Therefore, the step (S110) of spraying the first source material, the step (S120) of spraying the first reactant material, and the step of processing the purge gas can be repeatedly performed in one cycle.

[0065] In the step (S110) of spraying the first source material, the first source material may be a material containing titanium (Ti). The first source material may be, for example, one of titanium ethylimide (Ti[N(CH2CH3)2]4) and titanium tetramethylamide (Ti[N(CH3)2]4), but is not limited thereto, and various source materials may be used depending on the level of technology in the art.

[0066] In the step (S120) of injecting the first reactant material, the first reactant material may be a material containing nitrogen (N). The first reactant material may be, for example, ammonia (NH3) or dimethylamine ((CH3)2NH), but is not limited thereto, and various reactant materials may be used according to the level of technology in the art.

[0067] By performing the step of spraying the first source material (S110) and the step of spraying the first reactant material (S120), the first electrode layer (see 200a in FIG. 1) containing titanium nitride (TiN) can be formed on the substrate (see 100 in FIG. 1).

[0068] The first barrier layer forming step (S20) may be performed after the first electrode layer forming step (S10). Through the first barrier layer forming step (S20), the first barrier layer (see 310 in FIG. 1) may be formed on the first electrode layer (see 200a in FIG. 1).

[0069] According to one embodiment of the present invention, the first barrier layer forming step (S20) may include a first plasma forming step (S200). In this case, by forming the first plasma on the substrate (see 100 in FIG. 1) on which the first electrode layer (see 200a in FIG. 1) is formed, the composition of a portion of the upper surface of the first electrode layer (see 200a in FIG. 1) containing titanium nitride (TiN) may be changed. In this case, as the composition of a portion of the upper surface of the first electrode layer (see 200a in FIG. 1) is changed, a first barrier layer (see 310 in FIG. 1) containing titanium oxynitride (TiON) may be formed.

[0070] The first plasma may contain oxygen. For example, the first plasma may contain at least one of nitrous oxide (N2O), oxygen (O2), and ozone (O3) and may be formed on the substrate (see 100 in FIG. 1) on which the first electrode layer (see 200a in FIG. 1) is formed.

[0071] The dielectric layer forming step (S30) may be performed after the first barrier layer forming step (S20). In this case, the dielectric layer (see 400 in FIG. 1) may be formed on the first barrier layer (see 310 in FIG. 1).

[0072] The above dielectric layer formation step (S30) includes a second source material injection step (S210) and a second reactant material injection step (S220).

[0073] In the dielectric layer forming step (S30), the dielectric layer (see 400 in FIG. 1) may be deposited, for example, using atomic layer deposition (ALD). In this case, the atomic layer deposition (ALD) may use thermal atomic layer deposition (Thermal ALD) or plasma enhanced atomic layer deposition (Plasma Enhanced ALD; PEALD).

[0074] Accordingly, the second source material injection step (S210) and the second reactant material injection step (S220) can be performed in a vacuum chamber, and specifically, a substrate is placed on a susceptor provided at the bottom of the vacuum chamber, and the second source material and the second reactant material are injected through a gas injection port provided at the top of the vacuum chamber to form the dielectric layer (see 400 in FIG. 1) on the upper surface of the first barrier layer (see 310 in FIG. 1).

[0075] When the above-described atomic layer deposition (ALD) method is used, a step (S210) of spraying the second source material onto the substrate (see 100 in FIG. 1) is performed, a step (S220) of spraying the second reactant material is performed, and the step (S210) of spraying the second source material and the step (S220) of spraying the second reactant material can be repeated in one cycle. In this case, a step of processing a purge gas can be additionally included between each of the steps of spraying the second source material (S210) and the step (S220) of spraying the second reactant material. Therefore, the step (S210) of spraying the second source material, the step (S220) of spraying the second reactant material, and the step of processing the purge gas can be repeatedly performed in one cycle.

[0076] In the step (S210) of spraying the second source material, the second source material may be a material containing titanium (Ti). The second source material may be, for example, one of titanium tetrachloride (TiCl4) and titanium isopropoxide (Ti(OCH(CH3)2)4), but is not limited thereto, and various source materials may be used depending on the level of technology in the art.

[0077] In the step (S220) of injecting the second reactant material, the second reactant material may be a material containing oxygen (O). The second reactant material may be, for example, oxygen (O2) or ozone (O3), but is not limited thereto, and various reactant materials may be used according to the level of technology in the art.

[0078] By performing the step of spraying the second source material (S210) and the step of spraying the second reactant material (S220), the dielectric layer (see 400 in FIG. 1) containing titanium oxide (TiO) can be formed on the substrate (see 100 in FIG. 1).

[0079] The second electrode layer forming step (S40) may be performed after the dielectric layer forming step (S30). In this case, the second electrode layer (see 200b in FIG. 1) may be formed on the dielectric layer (see 400 in FIG. 1).

[0080] The above second electrode layer forming step (S40) includes a third source material injection step (S410) and a third reactant material injection step (S420).

[0081] In the second electrode layer forming step (S40), the second electrode layer (see 200b in FIG. 1) may be deposited, for example, using atomic layer deposition (ALD). In this case, the atomic layer deposition (ALD) may use thermal atomic layer deposition (Thermal ALD) or plasma enhanced atomic layer deposition (Plasma Enhanced ALD; PEALD).

[0082] Accordingly, the third source material injection step (S410) and the third reactant material injection step (S420) can be performed in a vacuum chamber, and specifically, a substrate is placed on a susceptor provided at the bottom of the vacuum chamber, and the third source material and the third reactant material are injected through a gas injection port provided at the top of the vacuum chamber to form the second electrode layer (see 200b in FIG. 1) on the upper surface of the dielectric layer (see 400 in FIG. 1).

[0083] When the above-described atomic layer deposition (ALD) method is used, a step (S410) of spraying the third source material onto the substrate (see 100 in FIG. 1) is performed, a step (S420) of spraying the third reactant material is performed, and the step (S410) of spraying the third source material and the step (S420) of spraying the third reactant material can be repeatedly performed in one cycle. In this case, a step of processing a purge gas can be additionally included between each of the steps of spraying the third source material (S410) and the step (S420) of spraying the third reactant material. Therefore, the step (S410) of spraying the third source material, the step (S420) of spraying the third reactant material, and the step of processing the purge gas can be repeatedly performed in one cycle.

[0084] In the step (S410) of spraying the third source material, the third source material may be a material containing titanium (Ti). The third source material may be, for example, one of titanium ethylimide (Ti[N(CH2CH3)2]4) and titanium tetramethylamide (Ti[N(CH3)2]4), but is not limited thereto, and various source materials may be used depending on the level of technology in the art.

[0085] In the step (S420) of injecting the third reactant material, the third reactant material may be a material containing nitrogen (N). The third reactant material may be, for example, ammonia (NH3) or dimethylamine ((CH3)2NH), but is not limited thereto, and various reactant materials may be used according to the level of technology in the art.

[0086] By performing the step of spraying the third source material (S410) and the step of spraying the third reactant material (S420), the second electrode layer (see 200b in FIG. 1) containing titanium nitride (TiN) can be formed on the substrate (see 100 in FIG. 1).

[0087] Fig. 3 is a flowchart of a capacitor forming method according to another embodiment of the present invention. Meanwhile, the embodiment according to Fig. 3 is identical to the embodiment according to Fig. 2 except for the first barrier layer forming step, and therefore, the following description will focus on the different configurations.

[0088] As can be seen in Fig. 3, a capacitor forming method according to another embodiment of the present invention comprises a first electrode layer forming step (S10), a first barrier layer forming step (S50), a dielectric layer forming step (S30), and a second electrode layer forming step (S40). Meanwhile, according to the embodiment of Fig. 3, the first barrier layer (see 310 of Fig. 1) may be formed by a different method from the first barrier layer forming step according to Fig. 2 (S20 of Fig. 2).

[0089] According to another embodiment of the present invention, the first barrier layer forming step (S50) may be performed after the first electrode layer forming step (S10). In this case, the first barrier layer (see 310 in FIG. 1) may be formed on the first electrode layer (see 200a in FIG. 1).

[0090] The above first barrier layer forming step (S50) includes a fourth source material injection step (S510), a fourth reactant material injection step (S520), and a fifth reactant material injection step (S530).

[0091] According to another embodiment of the present invention, in the first barrier layer forming step (S50), the first barrier layer (see 310 of FIG. 1) may be deposited using, for example, atomic layer deposition (ALD). In this case, the atomic layer deposition (ALD) may use thermal atomic layer deposition (Thermal ALD) or plasma enhanced atomic layer deposition (Plasma Enhanced ALD; PEALD).

[0092] Accordingly, the fourth source material injection step (S510), the fourth reactant material injection step (S520), and the fifth reactant material injection step (S530) can be performed in a vacuum chamber, and specifically, a substrate is placed on a susceptor provided at the bottom of the vacuum chamber, and the fourth source material, the fourth reactant material, and the fifth reactant material are injected through a gas injection port provided at the top of the vacuum chamber to form the first barrier layer (see 310 in FIG. 1) on the upper surface of the first electrode layer (see 200a in FIG. 1).

[0093] When using the above-described atomic layer deposition (ALD) method, a step (S510) of spraying the fourth source material onto the substrate (see 100 in FIG. 1) is performed, a step (S520) of spraying the fourth reactant material is performed, a step (S530) of spraying the fifth reactant material is performed, and the steps (S510) of spraying the fourth source material, (S520) of spraying the fourth reactant material, and (S530) of spraying the fifth reactant material may be repeated as one cycle. In this case, a step of processing a purge gas may be additionally included between each of the steps of spraying the fourth source material (S510), the step (S520) of spraying the fourth reactant material, and the step (S530) of spraying the fifth reactant material. Accordingly, the step of injecting the fourth source material (S510), the step of injecting the fourth reactant material (S520), the step of injecting the fifth reactant material (S530), and the step of processing the purge gas can be repeatedly performed in one cycle.

[0094] In the step (S510) of spraying the fourth source material, the fourth source material may be a material containing titanium (Ti). The fourth source material may be, for example, any one of titanium ethylimide (Ti[N(CH2CH3)2]4), titanium tetramethylamide (Ti[N(CH3)2]4), titanium tetrachloride (TiCl4), and titanium isopropoxide (Ti(OCH(CH3)2)4), but is not limited thereto, and various source materials may be used according to the level of technology in the art.

[0095] In the step (S520) of injecting the fourth reactant material, the fourth reactant material may be a material containing either oxygen (O) or nitrogen (N). The fourth reactant material may be, for example, ammonia (NH3) or dimethylamine ((CH3)2NH), but is not limited thereto, and various reactant materials may be used according to the level of technology in the art.

[0096] In the step (S220) of injecting the fifth reactant material, the fifth reactant material may be a material containing another one of oxygen (O) and nitrogen (N). The fifth reactant material may be, for example, oxygen (O2) or ozone (O3), but is not limited thereto, and various reactant materials may be used according to the level of technology in the art.

[0097] By performing the step of spraying the fourth source material (S510), the step of spraying the fourth reactant material (S520), and the step of spraying the fifth reactant material (S230), the first barrier layer (see 310 in FIG. 1) containing titanium oxynitride (TiON) can be formed on the substrate (see 100 in FIG. 1).

[0098] Fig. 4 is a flowchart of a capacitor forming method according to another embodiment of the present invention. Meanwhile, the embodiment according to Fig. 4 is identical to the embodiment according to Fig. 3 except for the first barrier layer forming step, and therefore, the following description will focus on the different configurations.

[0099] As can be seen from Fig. 4, a method for forming a capacitor according to another embodiment of the present invention comprises a first electrode layer forming step (S10), a first barrier layer forming step (S50), a dielectric layer forming step (S30), and a second electrode layer forming step (S40).

[0100] According to another embodiment of the present invention, the first barrier layer forming step (S50) may additionally include a second plasma forming step (S515).

[0101] The step of forming the second plasma (S515) may be performed between the step of injecting the fourth source material (S510) and the step of injecting the fourth reactant material (S520).

[0102] The second plasma may be formed by including oxygen (O) or nitrogen (N).

[0103] Through the step of forming the second plasma (S515), impurities existing inside the chamber after the step of injecting the fourth source material (S510) are removed, so that the purity of the first barrier layer (see 310 in FIG. 1) can be increased.

[0104] Fig. 5 is a flowchart of a capacitor forming method according to another embodiment of the present invention. Meanwhile, the embodiment according to Fig. 5 is identical to the embodiment according to Fig. 3 except for the first barrier layer forming step, and therefore, the following description will focus on the different configurations.

[0105] As can be seen from FIG. 5, a method for forming a capacitor according to another embodiment of the present invention comprises a first electrode layer forming step (S10), a first barrier layer forming step (S50), a dielectric layer forming step (S30), and a second electrode layer forming step (S40).

[0106] According to another embodiment of the present invention, the first barrier layer forming step (S50) may additionally include a step of forming a third plasma (S535).

[0107] The step of forming the third plasma (S535) may be performed after the step of injecting the fifth reactant material (S530).

[0108] The third plasma may be formed by including oxygen (O) or nitrogen (N).

[0109] Through the step of forming the third plasma (S535), impurities existing inside the chamber after the fourth reactant material injection step (S520) and the fifth reactant material injection step (S530) are performed are removed, so that the purity of the first barrier layer (see 310 in FIG. 1) can be increased.

[0110] Fig. 6 is a cross-sectional view of a capacitor according to another embodiment of the present invention. Meanwhile, the embodiment according to Fig. 6 is identical to the embodiment according to Fig. 1 except for the configuration of the second barrier layer, and therefore, the following description will focus on the different configuration.

[0111] As can be seen in FIG. 6, a capacitor according to another embodiment of the present invention comprises a substrate (100), a first electrode layer (200a), a first barrier layer (310), a dielectric layer (400), a second barrier layer (320), and a second electrode layer (200b).

[0112] The second barrier layer (320) is formed on the dielectric layer (400). Specifically, the second barrier layer (320) is formed between the dielectric layer (400) and the second electrode layer (200b).

[0113] The second barrier layer (320) may be formed of a material containing titanium (Ti). Specifically, the second barrier layer (320) may be formed of titanium oxynitride (TiON).

[0114] The second barrier layer (320) may be formed, for example, on the upper surface of the dielectric layer (400) using atomic layer deposition (ALD). Meanwhile, the method for forming the second barrier layer (320) will be described in more detail later with reference to FIGS. 7 to 9.

[0115] The second barrier layer (320) may have a thickness thinner than the dielectric layer (400).

[0116] According to another embodiment of the present invention, the second barrier layer (320) is formed between the dielectric layer (400) and the second electrode layer (200b), thereby preventing or minimizing oxygen (O) contained in the dielectric layer (400) and nitrogen (N) contained in the second electrode layer (200b) from flowing into different layers during the step of forming the second electrode layer (200b). Specifically, the second barrier layer (320) can prevent or minimize oxygen (O) contained in the dielectric layer (400) from flowing into the second electrode layer (200b), and can prevent or minimize nitrogen (N) contained in the second electrode layer (200b) from flowing into the dielectric layer (400).

[0117] Accordingly, it is possible to secure an appropriate thickness for securing the electrical conductivity characteristics of the second electrode layer (200b), and also to prevent the composition of a portion of the dielectric layer (400) adjacent to the second barrier layer (320) from changing. Since this can prevent the thickness of the dielectric layer (400) having a relatively high permittivity from decreasing, the capacitor according to one embodiment of the present invention can secure a high capacitor capacity.

[0118] Fig. 7 is a flowchart of a capacitor forming method according to another embodiment of the present invention. Meanwhile, the embodiment according to Fig. 7 is identical to the embodiment according to Fig. 2 except for the second barrier layer forming step, and therefore, the following description will focus on the different configurations.

[0119] As can be seen from Fig. 7, a method for forming a capacitor according to another embodiment of the present invention comprises a first electrode layer forming step (S10), a first barrier layer forming step (S20), a dielectric layer forming step (S30), a second barrier layer forming step (S60), and a second electrode layer forming step (S40).

[0120] According to another embodiment of the present invention, the second barrier layer forming step (S60) may be performed after the dielectric layer forming step (S30). In this case, the second barrier layer (see 320 in FIG. 6) may be formed on the dielectric layer (see 400 in FIG. 6).

[0121] The above second barrier layer forming step (S60) includes a fifth source material injection step (S610), a sixth reactant material injection step (S620), and a seventh reactant material injection step (S630).

[0122] According to another embodiment of the present invention, in the second barrier layer forming step (S60), the second barrier layer (see 320 of FIG. 6) may be deposited using, for example, atomic layer deposition (ALD). In this case, the atomic layer deposition (ALD) may use thermal atomic layer deposition (Thermal ALD) or plasma enhanced atomic layer deposition (Plasma Enhanced ALD; PEALD).

[0123] Accordingly, the fifth source material injection step (S610), the sixth reactant material injection step (S620), and the seventh reactant material injection step (S630) can be performed in a vacuum chamber, and specifically, a substrate is placed on a susceptor provided at the bottom of the vacuum chamber, and the fifth source material, the sixth reactant material, and the seventh reactant material are injected through a gas injection port provided at the top of the vacuum chamber to form the second barrier layer (see 320 in FIG. 6) on the upper surface of the dielectric layer (see 400 in FIG. 6).

[0124] When using the above-described atomic layer deposition (ALD) method, a step (S610) of spraying the fifth source material onto the substrate (see 100 in FIG. 6) is performed, a step (S620) of spraying the sixth reactant material is performed, a step (S630) of spraying the seventh reactant material is performed, and the steps (S610) of spraying the fifth source material, (S620) of spraying the sixth reactant material, and (S630) of spraying the seventh reactant material may be repeated as one cycle. In this case, a step of processing a purge gas may be additionally included between each of the steps of spraying the fifth source material (S610), the step (S620) of spraying the sixth reactant material, and the step (S630) of spraying the seventh reactant material. Accordingly, the step of injecting the fifth source material (S610), the step of injecting the sixth reactant material (S620), the step of injecting the seventh reactant material (S630), and the step of processing the purge gas can be repeatedly performed in one cycle.

[0125] In the step (S610) of spraying the fifth source material, the fifth source material may be a material containing titanium (Ti). The fifth source material may be, for example, any one of titanium ethylimide (Ti[N(CH2CH3)2]4), titanium tetramethylamide (Ti[N(CH3)2]4), titanium tetrachloride (TiCl4), and titanium isopropoxide (Ti(OCH(CH3)2)4), but is not limited thereto, and various source materials may be used depending on the level of technology in the art.

[0126] In the step (S620) of injecting the sixth reactant material, the sixth reactant material may be a material containing either oxygen (O) or nitrogen (N). The sixth reactant material may be, for example, ammonia (NH3) or dimethylamine ((CH3)2NH), but is not limited thereto, and various reactant materials may be used according to the level of technology in the art.

[0127] In the step (S220) of injecting the seventh reactant material, the seventh reactant material may be a material containing another one of oxygen (O) and nitrogen (N). The seventh reactant material may be, for example, oxygen (O2) or ozone (O3), but is not limited thereto, and various reactant materials may be used according to the level of technology in the art.

[0128] By performing the step of spraying the fifth source material (S610), the step of spraying the sixth reactant material (S620), and the step of spraying the seventh reactant material (S230), the second barrier layer (see 320 in FIG. 6) containing titanium oxynitride (TiON) can be formed on the substrate (see 100 in FIG. 6).

[0129] Fig. 8 is a flowchart of a capacitor forming method according to another embodiment of the present invention. Meanwhile, the embodiment according to Fig. 8 is identical to the embodiment according to Fig. 7 except for the second barrier layer forming step, and therefore, the following description will focus on the different configurations.

[0130] As can be seen from Fig. 8, a method for forming a capacitor according to another embodiment of the present invention comprises a first electrode layer forming step (S10), a first barrier layer forming step (S20), a dielectric layer forming step (S30), a second barrier layer forming step (S60), and a second electrode layer forming step (S40).

[0131] According to another embodiment of the present invention, the second barrier layer forming step (S60) may additionally include a step of forming a fourth plasma (S615).

[0132] The step of forming the fourth plasma (S615) may be performed between the step of injecting the fifth source material (S610) and the step of injecting the sixth reactant material (S620).

[0133] The fourth plasma may be formed by including oxygen (O) or nitrogen (N).

[0134] Through the step of forming the fourth plasma (S615), impurities existing inside the chamber after the step of injecting the fifth source material (S610) are removed, so that the purity of the second barrier layer (see 320 in FIG. 6) can be increased.

[0135] Fig. 9 is a flowchart of a capacitor forming method according to another embodiment of the present invention. Meanwhile, the embodiment according to Fig. 9 is identical to the embodiment according to Fig. 7 except for the second barrier layer forming step, and therefore, the following description will focus on the different configurations.

[0136] As can be seen from Fig. 9, a capacitor forming method according to another embodiment of the present invention comprises a first electrode layer forming step (S10), a first barrier layer forming step (S20), a dielectric layer forming step (S30), a second barrier layer forming step (S60), and a second electrode layer forming step (S40).

[0137] According to another embodiment of the present invention, the second barrier layer forming step (S60) may additionally include a step of forming a fifth plasma (S635).

[0138] The step of forming the fifth plasma (S635) may be performed after the step of injecting the fifth reactant material (S630).

[0139] The fifth plasma may be formed by including oxygen (O) or nitrogen (N).

[0140] Through the step of forming the fifth plasma (S635), impurities existing inside the chamber are removed after the sixth reactant material injection step (S620) and the seventh reactant material injection step (S630), so that the purity of the second barrier layer (see 320 in FIG. 6) can be increased.

[0141] Fig. 10 is a schematic diagram showing another embodiment of a substrate processing device in which a capacitor forming method according to one embodiment of the present invention is performed. Fig. 11 is a schematic bottom view showing the injection part in an enlarged manner based on part A of Fig. 10, and Fig. 12 is a schematic side cross-sectional view showing the injection part in an enlarged manner based on part A of Fig. 10.

[0142] Referring to FIGS. 10 to 12, a substrate processing device (1) according to an embodiment may include a chamber (2). A processing process for the substrate (100) may be performed inside the chamber (2).

[0143] The chamber (2) may include an injection unit (4). The injection unit (4) may inject gas. Using the gas injected by the injection unit (4), a processing process for the substrate (100) may be performed. The processing process for the substrate (100) may be performed in a processing space (20) arranged inside the chamber (2). The injection unit (4) may inject gas into the processing space (20).

[0144] The above-described injection unit (4) can inject gas toward the substrate support unit (3). The substrate support unit (3) can support one or more substrates (100). A processing process for the substrate (100) can be performed while the substrate (100) is supported by the substrate support unit (3) and positioned in the processing space (20). A driving unit (31) can be coupled to the substrate support unit (3). The driving unit (31) can raise and lower the substrate support unit (3). The driving unit (31) can also rotate the substrate support unit (3).

[0145] The above injection unit (4) may include a first plate (43) and a second plate (44).

[0146] The first plate (43) may be arranged on the upper side of the second plate (44). The first plate (43) may include a first gas supply port (431) and a second gas supply port (432). The first gas supply port (431) may function as a passage for the first gas to flow. The first gas supply port (431) may be formed by penetrating the first plate (43). The first gas supply port (431) may correspond to a first path for supplying the first gas. The first plate (43) may include a plurality of first gas supply ports (431). In this case, the first gas supply ports (431) may be arranged at positions spaced apart from each other. The second gas supply port (432) may function as a passage for the second gas to flow. The second gas supply port (432) may be formed by penetrating the first plate (43). The second gas supply port (432) may correspond to a second path for supplying the second gas. The first plate (43) may include a plurality of second gas supply ports (432). In this case, the second gas supply ports (432) may be arranged at positions spaced apart from each other. The lower surface of the first plate (43) may be formed flat. For example, the first gas supply port (431) may be a first gas path connected to one side of the chamber (2), the second gas supply port (432) may be a second gas path connected to one side of the chamber (2), and the first gas path may be a gas path for introducing a gas containing the first source material to the fifth source material according to an embodiment of the present invention, for example, titanium (Ti), into the chamber (2), and the second gas path may be a gas path for introducing a gas containing the first reactant material to the seventh reactant material according to an embodiment of the present invention, for example, one or more of nitrogen (N) and oxygen (O), into the chamber (2).

[0147] The first gas supply port (431) may be connected to the first supply unit (51). The first supply unit (51) may store the first gas and supply the first gas to the first gas supply port (431). The first gas supply port (431) may be connected to a pile-up tank (52). The pile-up tank (52) may fill the first gas and temporarily spray the first gas into the processing space (20) through the first gas supply port (431). The pile-up tank (52) may be connected to each of the first supply unit (51) and the first gas supply port (431) between the first supply unit (51) and the first gas supply port (431). The first supply unit (51) may supply purge gas for purging the processing space (20), gas for forming plasma in the processing space (20), etc. to the first gas supply port (431).

[0148] The second gas supply port (432) may be connected to the second supply unit (53). The second supply unit (53) may store the second gas and supply the second gas to the second gas supply port (432). The second gas supply port (432) may be connected to a pile-up tank (54). The pile-up tank (54) may fill the second gas and temporarily spray the second gas into the processing space (20) through the second gas supply port (432). The pile-up tank (54) may be connected to each of the second supply unit (53) and the second gas supply port (432) between the second supply unit (53) and the second gas supply port (432). The second supply unit (53) may supply purge gas for purging the processing space (20), gas for forming plasma in the processing space (20), etc. to the second gas supply port (432).

[0149] The second plate (44) may be arranged on the lower side of the first plate (43). The second plate (44) may be arranged spaced apart from the first plate (43). The second plate (44) may include a plurality of openings (441). The openings (441) may be formed by penetrating the second plate (44). The openings (441) may be arranged at positions spaced apart from each other. The openings (441) may be arranged to be staggered with respect to the first gas supply port (431) and the second gas supply port (432). In this case, the openings (441) may be arranged at positions spaced apart from the vertically downward direction of the first gas supply port (431) and the vertically downward direction of the second gas supply port (432). That is, the openings (441) may be arranged so as not to overlap with the first gas supply port (431) and the second gas supply port (432). Accordingly, the first gas supply port (431) may inject the first gas toward the upper surface of the second plate (44). The second gas supply port (432) may inject the second gas toward the upper surface of the second plate (44).

[0150] The above-mentioned injection unit (4) can form plasma using the second plate (44) and the first plate (43). In this case, power, such as RF power, may be applied to the first plate (43), and the second plate (44) may be grounded. The first plate (43) may be grounded, and power may be applied to the second plate (44).

[0151] Meanwhile, the chamber (2) may include a turbo molecular pump (222). The turbo molecular pump (222) may control the pressure inside the chamber (2). The turbo molecular pump (222) may be connected to an exhaust unit (221) provided in the chamber (2). The turbo molecular pump (222) may control the pressure inside the chamber (2) by sucking a gas or the like from inside the chamber (2) through the exhaust unit (221). The chamber (2) including the turbo molecular pump (222) may be controlled to a high vacuum pressure of 10 mTorr or more and 50 mTorr or less.

[0152] Although the embodiments of the present invention have been described in more detail with reference to the attached drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be implemented without departing from the technical spirit of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain it, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all aspects and not restrictive. The protection scope of the present invention should be interpreted by the claims, and all technical ideas within a scope equivalent thereto should be interpreted as being included in the scope of the rights of the present invention.

Claims

1. A step of forming a first electrode layer including titanium nitride on a substrate; A step of forming a first barrier layer including titanium oxynitride on the first electrode layer; Comprising a step of forming a dielectric layer including titanium oxide on the first barrier layer, A method for forming a capacitor, wherein the step of forming a first barrier layer including the titanium oxynitride includes the step of forming a first plasma containing oxygen on the first electrode layer including the titanium nitride.

2. In paragraph 1, A method for forming a capacitor, wherein the first plasma containing oxygen comprises one or more of nitrous oxide, oxygen, and ozone.

3. In paragraph 1, A method for forming a capacitor further comprising the step of forming a second barrier layer containing titanium oxynitride on the dielectric layer.

4. In paragraph 3, The step of forming the second barrier layer is a method of forming a capacitor using an atomic layer deposition method.

5. In paragraph 4, The step of forming the second barrier layer is: A step of spraying a second source material containing titanium on the upper surface of the dielectric layer; a step of spraying a second reactant material containing oxygen on the upper surface of the dielectric layer; and A method for forming a capacitor, comprising the step of spraying a second reactant material containing nitrogen on the upper surface of the dielectric layer.

6. In paragraph 1, A method for forming a capacitor further comprising the step of forming a second electrode layer comprising titanium nitride.

7. A step of forming a first electrode layer including titanium nitride on a substrate; A step of forming a first barrier layer including titanium oxynitride on the first electrode; Comprising a step of forming a dielectric layer including titanium oxide on the first barrier layer, The step of forming a first barrier layer including the titanium oxynitride is: A step of spraying a gas containing titanium onto the substrate; A step of forming titanium oxide by spraying a gas containing oxygen onto the substrate; A method for forming a capacitor, comprising the step of forming titanium oxynitride by spraying a gas containing nitrogen on the titanium oxide.

8. In paragraph 7, A method for forming a capacitor, wherein the gas containing the oxygen comprises one or more of nitrous oxide, oxygen, and ozone.

9. In paragraph 7, A method for forming a capacitor, further comprising the step of injecting a gas containing titanium, and the step of forming a second plasma containing one or both of oxygen and nitrogen between the step of injecting the gas containing oxygen and the step of injecting the gas containing nitrogen.

10. In paragraph 7, A method for forming a capacitor, further comprising the step of forming a third plasma containing one or both of oxygen and nitrogen after the step of injecting a gas containing titanium, the step of injecting a gas containing oxygen, and the step of injecting a gas containing nitrogen.

11. A method for forming a capacitor on a substrate provided in a chamber, The above chamber is connected to a first gas path and a second gas path, The first gas path introduces a gas containing titanium into the chamber, The second gas path introduces either oxygen or nitrogen into the chamber, A capacitor forming method in which the capacitor forming method of any one of claims 7 to 10 is performed within the chamber.

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