Substrate processing device and operating method thereof

Abstract

The present disclosure relates to a substrate processing device and an operating method thereof. The substrate processing device of the present disclosure can perform a plasma cleaning process on a substrate to which at least one chip is bonded and which contains contaminants, and may comprise: a moving chuck for supporting the substrate; a plasma source which generates plasma and which emits same toward the substrate; a baffle for adjusting the flow of the plasma so as to provide the plasma to the substrate; and a control circuit for moving the moving chuck so that the distance between the baffle and the moving chuck corresponds to the optimal distance, wherein the optimal distance can be determined on the basis of the distance between the at least one chip and the substrate.

Description

Substrate processing device and its operating method

[0001] The present disclosure relates to a device for performing a semiconductor process, and more specifically, to a substrate processing device for performing a plasma cleaning process on a semiconductor substrate and an operating method thereof.

[0002] Typically, in semiconductor packaging processes, a wet cleaning process is used to remove contaminants such as flux remaining in the bond gap formed between the chip and the substrate after the bonding process that attaches the chip to the substrate. However, the wet cleaning process has caused environmental problems due to the use of hazardous cleaning solvents, increased process costs, and poor quality.

[0003] To address these issues with wet cleaning processes, dry cleaning processes utilizing plasma and other technologies have been employed. However, when dry cleaning substrates with low bond gaps of less than 30 um using conventional dry cleaning equipment, plasma penetration into the low bond gaps is insufficient, significantly reducing the cleaning effect.

[0004] Therefore, there is a need for a dry cleaning device that can perform a dry cleaning process with excellent cleaning effect even on substrates with a low bond gap.

[0005] The present disclosure aims to provide a substrate processing device and an operating method thereof that obtain an optimal distance between a baffle and a moving chuck and perform a plasma cleaning process by moving the moving chuck based on the obtained optimal distance.

[0006] The present disclosure aims to provide a substrate processing device and an operating method thereof that obtain an optimal angle at which plasma is provided to a substrate and performs plasma provision to the substrate based on the obtained optimal angle.

[0007] The problems to be solved by the present disclosure are not limited to the problems described above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

[0008] According to one embodiment of the present disclosure, a substrate processing apparatus for performing a plasma cleaning process on a substrate having at least one chip bonded thereto and including contaminants may include a moving chuck for supporting the substrate, a plasma source for generating plasma and irradiating the plasma toward the substrate, a baffle for controlling a flow of plasma to provide plasma to the substrate, and a control circuit for moving the moving chuck such that a distance between the baffle and the moving chuck corresponds to an optimal distance, wherein the optimal distance may be determined based on a distance between the at least one chip and the substrate.

[0009] In some embodiments, the baffle may include a pattern layer that allows the plasma to pass through, and the pattern layer may control the angle at which the plasma is provided relative to the substrate.

[0010] In some embodiments, the angle at which the plasma is provided may be determined based on the distance between at least one chip and the substrate.

[0011] In some embodiments, the angle at which the plasma is provided may be determined such that the plasma is provided perpendicular to the top of the substrate.

[0012] In some embodiments, the distance between at least one chip and the substrate may be greater than 0 and less than 30 um.

[0013] In some embodiments, the plasma source may be an Inductively Coupled Plasma (ICP) source that forms plasma using a magnetic field generated by passing a high-frequency current through a coil.

[0014] In some embodiments, the substrate processing apparatus may further include a Radio Frequency (RF) bias module that applies an RF bias voltage to the moving chuck.

[0015] A method of operating a substrate processing apparatus according to an embodiment of the present disclosure may include a step of placing a substrate including at least one chip bonded thereto and a contaminant on top of a moving chuck through a bonding process, a step of measuring a distance between the at least one chip and the substrate, and a step of generating substrate state data related to the distance between the at least one chip and the substrate, a step of obtaining an optimal distance between a baffle and the moving chuck determined based on the substrate state data, a step of moving the moving chuck such that the distance between the baffle and the moving chuck corresponds to the optimal distance, and a step of irradiating plasma toward the substrate.

[0016] In some embodiments, the method of operating the substrate processing device may further include the steps of obtaining an optimal angle at which plasma is provided to the substrate based on a distance between at least one chip and the substrate, and adjusting the angle at which plasma is provided to the substrate to correspond to the optimal angle.

[0017] In some embodiments, the method of operating the substrate processing apparatus may further include applying an RF bias voltage to the moving chuck.

[0018] According to an embodiment of the present disclosure, by performing a plasma cleaning process on a substrate based on an optimal distance between a baffle and a moving chuck and an optimal angle for providing plasma, the cleaning effect on contaminants remaining on the substrate can be improved.

[0019] According to an embodiment of the present disclosure, by performing substrate surface treatment using plasma simultaneously with a dry cleaning process, the adhesion between a chip and a substrate can be improved, and the yield of a packaging process can be improved.

[0020] The effects according to the present disclosure are not limited to the effects described above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below.

[0021] FIG. 1 is a block diagram illustrating a substrate processing system according to an embodiment of the present disclosure.

[0022] FIG. 2 is a cross-sectional view of a substrate processing device according to an embodiment of the present disclosure.

[0023] FIG. 3 is a drawing for explaining a plasma cleaning process according to an embodiment of the present disclosure.

[0024] FIG. 4 is a flowchart showing an operation method of a substrate processing device according to an embodiment of the present disclosure.

[0025] FIG. 5 is a flowchart illustrating an operation method of an electronic device according to an embodiment of the present disclosure.

[0026] FIG. 6 is a cross-sectional view of a substrate processing device according to another embodiment of the present disclosure.

[0027] FIG. 7 is a flowchart showing an operation method of a substrate processing device according to another embodiment of the present disclosure.

[0028] FIG. 8 is a flowchart illustrating an operating method of an electronic device according to another embodiment of the present disclosure.

[0029] FIG. 9a, FIG. 9b, and FIG. 9c are diagrams showing simulation results of an electronic device according to an embodiment of the present disclosure.

[0030] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the contents described in the attached drawings. However, the present invention is not limited or restricted by the exemplary embodiments. Unless otherwise defined, all terms (including technical and scientific terms) used in this specification shall be used with meanings that can be commonly understood by those of ordinary skill in the technical field to which this disclosure pertains. However, this may vary depending on the intentions of those skilled in the art, precedents, the emergence of new technologies, etc.

[0031] Additionally, terms defined in commonly used dictionaries should not be interpreted ideally or excessively unless explicitly and specifically defined otherwise. In certain cases, terms may be arbitrarily selected by the applicant, in which case their meanings will be described in detail in the relevant description. Therefore, the terms used in this disclosure should be defined based on their meaning and the overall content of this disclosure, rather than simply their names.

[0032] Throughout this specification, when a part is said to "include" a certain component, this does not mean that other components may be included, but rather that other components may be excluded, unless specifically stated otherwise. Furthermore, the singular forms used herein also include plural forms unless specifically stated otherwise. Furthermore, the expression "at least one of a, b, and / or c" used throughout this specification can encompass "a alone," "b alone," "c alone," "a and b," "a and c," "b and c," or "all of a, b, and c."

[0033] Meanwhile, terms such as "first and / or second" used in this specification may be used to describe various components, but are only used to distinguish one component from another and are not intended to be limited to the components referred to by those terms. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and the second component may also be referred to as the first component.

[0034] In addition, terms such as “unit”, “module”, etc. described in this specification mean a unit that processes at least one function or operation, which may be implemented by hardware or software, or a combination of hardware and software. In addition, embodiments of the present disclosure in this specification may be represented by functional block configurations and various processing steps. These functional blocks may be implemented by various numbers of hardware or / and software configurations that execute specific functions. For example, embodiments of the present disclosure may employ direct circuit configurations such as memory, processing, logic, look-up tables, etc. that may execute various functions under the control of one or more microprocessors or other control devices.

[0035] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In describing the embodiments, descriptions of technical details that are well known in the technical field to which the present invention pertains and are not directly related to the present invention will be omitted. This is to convey the gist of the present invention more clearly without obscuring unnecessary explanation. For the same reason, some components in the accompanying drawings are exaggerated, omitted, or schematically depicted. Furthermore, the size of each component does not entirely reflect the actual size. Throughout this specification, the same reference numerals may refer to the same or corresponding components.

[0036] FIG. 1 is a block diagram illustrating a substrate processing system (10) according to an embodiment of the present disclosure.

[0037] Referring to FIG. 1, a substrate processing system (10) according to an embodiment of the present disclosure may include a substrate processing device (110) and an electronic device (120).

[0038] A substrate processing device (110) according to an embodiment of the present disclosure can perform a semiconductor process on a substrate placed on the substrate processing device (110) and can be included in semiconductor processing equipment. In an embodiment of the present disclosure, a substrate that can be placed on the substrate processing device (110) can be at least one of a semiconductor wafer, a mask, a glass substrate, and a liquid crystal display.

[0039] Hereinafter, a substrate processing device (110) according to an embodiment of the present disclosure will be described as a device for performing a plasma cleaning process to remove contaminants remaining between a chip and a substrate after a semiconductor bonding process for attaching a chip to a substrate. However, this is only for convenience of explanation and does not limit the contents of the present disclosure. According to various embodiments of the present disclosure, the substrate processing device (110) may be a device for performing any process requiring plasma cleaning among various manufacturing processes such as a packaging process, a reflow process, an etching process, a deposition process, a photo process, and a heat treatment process for producing a semiconductor chip.

[0040] A substrate processing device (110) according to an embodiment of the present disclosure may include a plasma source (111), a baffle (112), a plasma exhaust port (113), a moving chuck (114), an RF (Radio Frequency) bias module (115), a distance measurement sensor (116), and a control circuit (117).

[0041] The plasma source (111) can generate plasma and irradiate the plasma toward the substrate under the control of the control circuit (117). In some embodiments, the plasma source (111) may be an ICP (Inductively Coupled Plasma) source that forms plasma by using a magnetic field generated by flowing a high-frequency current through a coil. The ICP source can improve the surface treatment efficiency of the substrate by providing a high plasma density and a uniform plasma distribution. However, the technical idea of ​​the present disclosure is not limited thereto, and the plasma source (111) may be a CCP (Capacitively Coupled Plasma), an RIE (Reactively Ion Etching) plasma, or a microwave plasma source.

[0042] In some embodiments, the baffle (112) can regulate the flow of plasma to provide plasma to the substrate under the control of the control circuit (117). As described below with reference to FIGS. 2 and 6, the baffle (112) can include a pattern layer that allows the plasma to pass through, and the pattern layer can regulate the angle at which the plasma is provided with respect to the substrate. As described below with reference to FIG. 8, the angle at which the plasma is provided to the substrate can be determined based on the distance between the chip and the substrate. In some embodiments, the angle at which the plasma is provided to the substrate can be perpendicular to the top of the substrate.

[0043] In some embodiments, the patterned layer may include a porous structure or variable slots. The patterned layer can control the distribution and intensity of the plasma, as well as the angle at which the plasma is applied relative to the substrate. This allows the patterned layer to provide optimal plasma distribution for specific areas, enabling precise cleaning of the substrate.

[0044] In another embodiment, the baffle (112) may mean any structure that adjusts the angle at which plasma is provided to the substrate without the control of the control circuit (117).

[0045] In some embodiments, the plasma exhaust port (113) may refer to a passage that discharges plasma used for substrate processing to the outside under the control of the control circuit (117). For example, the plasma exhaust port (113) may adjust the discharge speed of plasma used for substrate processing and adjust the internal pressure of the plasma exhaust port (113) under the control of the control circuit (117).

[0046] In another embodiment, the plasma exhaust port (113) may mean any passage connected to the outside that discharges plasma used for substrate processing to the outside without the control of the control circuit (117).

[0047] The moving chuck (114) can move under the control of the control circuit (117) and can support the substrate. In some embodiments, the moving chuck (114) can perform an up-and-down movement, but the technical idea of ​​the present disclosure is not limited thereto, and can move in any direction so as to facilitate plasma provision to the substrate placed on the moving chuck (114) under the control of the control circuit (117). For example, the moving chuck (114) can rotate or move within the XY plane so as to uniformly provide plasma to the substrate under the control of the control circuit (117).

[0048] The RF bias module (115) can apply an RF bias voltage to the moving chuck (114) under the control of the control circuit (117). By the RF bias module (115) applying the RF bias voltage (RF) to the moving chuck (114), the linearity of the plasma provided to the substrate can be improved. In some embodiments, the RF bias module (115) can apply an RF bias voltage having various frequencies and voltage ranges, thereby finely adjusting the intensity of the plasma provided to the substrate.

[0049] In some embodiments, the RF bias module (115) may apply different bias voltages to different areas of the moving chuck (114) when intensive processing is required in specific areas of the substrate.

[0050] The distance measuring sensor (116) can measure the distance between the chip and the substrate and the distance between the baffle (112) and the moving chuck (114). In some embodiments, the distance measuring sensor (116) may be a laser sensor, an ultrasonic sensor, or the like, and may be a sensor capable of measuring in um units.

[0051] The distance between the chip and the substrate measured by the distance measuring sensor (116) can be used to determine the optimal distance between the baffle (112) and the moving chuck (114) or the optimal angle at which plasma is provided to the substrate, as described below with reference to FIGS. 5 and 8. The distance between the baffle (112) and the moving chuck (114) measured by the distance measuring sensor (116) can be used, for example, by the control circuit (117) to move the moving chuck (114) so ​​that the distance between the baffle (112) and the moving chuck (114) corresponds to the optimal distance.

[0052] In some embodiments, the substrate processing device (110) may use a distance measurement sensor (116) to measure the distance between the chip and the substrate and generate substrate condition data related to the distance between the chip and the substrate. Additionally, the substrate processing device (110) may provide the substrate condition data to the electronic device (120).

[0053] In some embodiments, the substrate processing device (110) may further include an angle measuring sensor (not shown) for measuring the angle at which the plasma is provided to the substrate. The angle measuring sensor (not shown) may be, for example, a laser angle measuring sensor, an ultrasonic angle measuring sensor, or the like. The angle at which the plasma is provided to the substrate measured by the angle measuring sensor (not shown) may be used, for example, by the control circuit (117) to adjust the angle at which the plasma is provided to the substrate to correspond to an optimal angle.

[0054] The control circuit (117) may be any circuit that controls the operation of the plasma source (111), the baffle (112), the plasma exhaust port (113), the moving chuck (114), the RF bias module (115), the distance measuring sensor (116), and the angle measuring sensor (not shown). However, this is merely exemplary, and the control circuit (117) may be any circuit that controls at least one of the plasma source (111), the baffle (112), the plasma exhaust port (113), the moving chuck (114), the RF bias module (115), the distance measuring sensor (116), and the angle measuring sensor (not shown).

[0055] In some embodiments, the control circuit (117) may obtain the optimal distance between the baffle (112) and the moving chuck (114) by receiving optimal distance data corresponding to the optimal distance from the electronic device (120). The control circuit (117) may control the movement of the moving chuck (114) so ​​that the distance between the baffle (112) and the moving chuck (114) corresponds to the optimal distance. Here, the optimal distance may be determined based on the distance between the chip and the substrate, as described below with reference to FIG. 5.

[0056] In another embodiment, the control circuit (117) may receive optimal angle data corresponding to an optimal angle from the electronic device (120) to obtain an optimal angle at which plasma is provided to the substrate. The control circuit (117) may control the baffle (112) so that the angle at which plasma is provided to the substrate corresponds to the optimal angle. Here, the optimal angle may be determined based on the distance between the chip and the substrate, as described below with reference to FIG. 8.

[0057] The electronic device (120) may include a simulation module (121) and a memory (122).

[0058] In some embodiments, the simulation module (121) can determine the optimal distance between the baffle (112) and the moving chuck (114) by performing a simulation based on substrate state data related to the distance between the chip and the substrate as described below with reference to FIG. 5. After determining the optimal distance, the electronic device (120) can provide optimal distance data corresponding to the optimal distance to the substrate processing device (110).

[0059] In another embodiment, the simulation module (121) can determine an optimal angle at which plasma is applied to the substrate by performing a simulation based on substrate condition data related to the distance between the chip and the substrate, as described below with reference to FIG. 8. After determining the optimal angle, the electronic device (120) can provide optimal angle data corresponding to the optimal angle to the substrate processing device (110).

[0060] The memory (122) can store semiconductor process recipe data. The semiconductor process recipe data can include data related to a semiconductor process performed in the substrate processing device (110). Specifically, the semiconductor process recipe data can include at least a portion of semiconductor process procedure data performed in the substrate processing device (110) and parameter data required for a plasma cleaning process performed in the substrate processing device (110). The electronic device (120) can monitor the operating status of the substrate processing device (110) and process necessary data corresponding to the operating status of the substrate processing device (110) and the semiconductor process recipe data.

[0061] The substrate processing device (110) and its operating method according to an embodiment of the present disclosure can improve the cleaning effect on contaminants remaining on the substrate by performing a plasma cleaning process on the substrate based on the optimal distance between the baffle (112) and the moving chuck (114) and the optimal angle for providing plasma.

[0062] In addition, the substrate processing device (110) and its operating method according to the embodiment of the present disclosure can improve the adhesion between the chip and the substrate and improve the yield of the packaging process by performing substrate surface treatment through plasma simultaneously with the dry cleaning process.

[0063] Meanwhile, in FIG. 1, the substrate processing device (110) and the electronic device (120) are illustrated as separate components, but this is only one embodiment according to the present disclosure and does not limit the form of the substrate processing system (10) according to the present disclosure. Specifically, the substrate processing device (110) and the electronic device (120) may be electrically connected or wirelessly connected as illustrated in FIG. 1. When the substrate processing device (110) and the electronic device (120) are wirelessly connected, each of the substrate processing device (110) and the electronic device (120) may include a communication module for communication. Alternatively, the electronic device (120) may be implemented by being included in the substrate processing device (110).

[0064] Meanwhile, in FIG. 1, the substrate processing system (10) is illustrated as including one substrate processing device (110) and an electronic device (120), but this is only one embodiment according to the present disclosure and does not limit the form of the substrate processing system (10) according to the present disclosure. Specifically, in some embodiments, the substrate processing system (10) may include a plurality of substrate processing devices (110) and at least one electronic device (120). When the substrate processing system (10) includes a plurality of substrate processing devices (110) and one electronic device (120), the plurality of substrate processing devices (110) may be controlled by one electronic device (120), and when the substrate processing system (10) includes a plurality of substrate processing devices (110) and a plurality of electronic devices (120), each of the plurality of substrate processing devices (110) may be controlled by an electronic device (120) corresponding to each of the plurality of substrate processing devices (110).

[0065] FIG. 2 is a cross-sectional view of a substrate processing device according to an embodiment of the present disclosure.

[0066] FIG. 2 can be described with reference to FIG. 1 described above. The substrate processing device (110) of FIG. 2 may include a plasma source (111), a baffle (112), a plasma exhaust port (113), a moving chuck (114), an RF bias module (115), a distance measurement sensor (not shown), and a control circuit (not shown). Although the distance measurement sensor (not shown) and the control circuit (not shown) of FIG. 2 are not depicted, the distance measurement sensor (not shown) and the control circuit (not shown) of FIG. 2 can be described with reference to FIG. 1.

[0067] A plasma source (111) can generate plasma (PL) under the control of a control circuit (not shown) and irradiate the plasma (PL) toward a substrate (W). The plasmas (PL) irradiated toward the substrate (W) can pass through a baffle (112) and be provided to the substrate (W).

[0068] The baffle (112) can control the flow of plasma (PL) so that plasma (PL) is provided to the substrate (W) under the control of a control circuit (not shown). The baffle (112) can include a pattern layer (PT1) that allows plasma (PL) to pass therethrough, and the pattern layer (PT1) can control the angle (A) at which the plasma is provided to the substrate. For example, the angle (A) at which the plasma is provided to the substrate can be perpendicular to the top of the substrate (W).

[0069] The moving chuck (114) can move under the control of a control circuit (not shown) and can support a substrate (W). As the moving chuck (114) moves under the control of the control circuit (not shown), the distance (d) between the baffle and the moving chuck can be adjusted. In some embodiments, the moving chuck (114) can move to correspond to an optimal distance under the control of the control circuit (not shown). Here, the optimal distance can be determined based on the distance between the chip and the substrate (W), as described below with reference to FIG. 5.

[0070] The plasma exhaust port (113) may refer to a passage that discharges plasma (PL) used for substrate processing to the outside under the control of a control circuit (not shown). In FIG. 2, the plasma exhaust port (113) is illustrated as having two outlets (OUTLET1, OUTLET2) connected to the outside, but this is merely exemplary and the technical idea of ​​the present disclosure is not limited thereto, and the number of outlets through which the plasma exhaust port (113) is connected to the outside may be 1, 3, 4, N (where N is a natural number), etc.

[0071] The RF bias module (115) can apply an RF bias voltage (RF) to the moving chuck (114) under the control of a control circuit (not shown). By the RF bias module (115) applying the RF bias voltage (RF) to the moving chuck (114), the straightness of the plasma (PL) provided to the substrate can be improved.

[0072] The control circuit (not shown) may be any circuit that controls the operation of the plasma source (111), the baffle (112), the plasma exhaust port (113), the moving chuck (114), the RF bias module (115), and the distance measurement sensor (not shown). However, this is merely exemplary, and the control circuit (not shown) may be any circuit that controls at least one of the plasma source (111), the baffle (112), the plasma exhaust port (113), the moving chuck (114), the RF bias module (115), and the distance measurement sensor (not shown).

[0073] FIG. 3 is a drawing for explaining a plasma cleaning process according to an embodiment of the present disclosure.

[0074] Figure 3 can be explained with reference to Figures 1 and 2. The substrate (W) of Figure 3 may be a substrate (W) on which chips (C) are bonded through a bonding process. For example, the chips (C) may be bonded to the top of the substrate (W) through a metal alloy called solder (S).

[0075] In the present disclosure, the distance between the chip (C) and the substrate (W) may be referred to as a bond gap (BG), and when the bond gap (BG) is greater than 0 and less than 30 um, it may be referred to as a low bond gap.

[0076] A contaminant (CT) may be present on the top of the substrate (W) due to any process prior to the bonding process or plasma cleaning process. For example, the contaminant (CT) may be a flux used to remove oxides on the surface of the substrate (W) during the bonding process.

[0077] Referring to FIGS. 1 and 2, the plasma source (111) described above can generate plasmas (PL) having high energy and reactivity, and can irradiate the generated plasmas (PL) toward the substrate (W). The plasmas (PL) irradiated toward the substrate (W) can pass through the baffle (112) and be provided to the upper portion of the substrate (W), and can physically collide with or chemically react with contaminants (CT) remaining on the upper portion of the substrate (W) to remove the contaminants (CT). Through this, the substrate processing device (110) can remove contaminants (CT) of the substrate (W) having a low bond gap.

[0078] FIG. 4 is a flowchart showing an operation method of a substrate processing device according to an embodiment of the present disclosure.

[0079] Figure 4 can be explained with reference to Figures 1 to 3 described above.

[0080] In step S110, the substrate processing device (110) can place the substrate (W) on top of the moving chuck (114). In some embodiments, the substrate processing device (110) can place the substrate (W) including at least one chip (C) bonded and a contaminant (CT) through a bonding process on top of the moving chuck (114). Various methods can be utilized for placing the substrate (W) on top of the moving chuck (114), such as a vacuum adsorption method, an electrostatic adsorption method, a mechanical clamping method, and a magnetic adsorption method.

[0081] In step S120, the substrate processing device (110) can measure the distance (BG) between the chip (C) and the substrate (W) and generate substrate condition data related to the distance (BG) between the chip (C) and the substrate (W). For example, the substrate processing device (110) can measure the distance (BG) between the chip (C) and the substrate (W) using a distance measurement sensor (116) and generate substrate condition data related to the distance (BG) between the chip (C) and the substrate (W). The substrate condition data can include data on the condition of the substrate, such as the thickness of the substrate and the physical properties of the substrate.

[0082] At step S130, the substrate processing device (110) can obtain an optimal distance between the baffle (112) and the moving chuck (114) determined based on the substrate status data.

[0083] For example, the electronic device (120) can receive substrate state data from the substrate processing device (110) after step S120. As described below with reference to FIG. 5, the electronic device (120) can perform a simulation based on the substrate state data and determine an optimal distance between the baffle (112) and the moving chuck (114) based on the simulation result. The electronic device (120) can generate optimal distance data corresponding to the optimal distance, and the substrate processing device (110) can obtain the optimal distance between the baffle (112) and the moving chuck (114) by receiving the optimal distance data from the electronic device (120).

[0084] In step S140, the substrate processing device (110) can move the moving chuck (114) so ​​that the distance (d) between the baffle (112) and the moving chuck (114) corresponds to the optimal distance. Specifically, the control circuit (117) of the substrate processing device (110) can move the moving chuck (114) so ​​that it corresponds to the optimal distance obtained in step S130.

[0085] In step S150, the substrate processing device (110) can irradiate plasma (PL) toward the substrate (W). The plasma source (111) can irradiate plasma (PL) toward the substrate processing device (110), and the plasma (PL) can pass through the baffle (112) and be provided to the substrate (W).

[0086] In some embodiments, the method of operating the substrate processing device (110) may further include a step of applying an RF bias voltage (RF) to the moving chuck (114). By applying the RF bias voltage (RF) to the moving chuck (114), the straightness of the plasma (PL) provided toward the substrate (W) may be improved.

[0087] FIG. 5 is a flowchart illustrating an operation method of an electronic device according to an embodiment of the present disclosure.

[0088] Figure 5 can be explained with reference to Figures 1 to 4 described above.

[0089] At step S210, the electronic device can receive substrate status data. The substrate status data can include data on the status of the substrate, such as the distance (BG) between the chip (C) and the substrate (W), the thickness of the substrate, and the physical properties of the substrate.

[0090] In step S220, the electronic device (120) can obtain residual contaminant data by performing a plasma cleaning process simulation based on substrate state data.

[0091] For example, the simulation module (121) of the electronic device (120) can adjust parameters required for the simulation, such as the distance (BG) between the chip (C) and the substrate (W), the thickness of the substrate, and the physical properties of the substrate, based on the substrate state data. In addition, the simulation module (121) can perform a plasma cleaning process simulation by adjusting the distance (d) between the baffle (112) and the moving chuck (114) in the simulation. After the plasma cleaning process simulation is completed, the electronic device (120) can store the size of the contaminant (CT) remaining on the substrate (W) in the simulation in the memory (122) to obtain residual contaminant data according to the distance (d) between the baffle (112) and the moving chuck (114).

[0092] At step S230, the electronic device (120) can determine the optimal distance between the baffle (112) and the moving chuck (114) based on the residual contaminant data. For example, the electronic device (120) can determine the distance (d) between the baffle (112) and the moving chuck (114) corresponding to the smallest size of the contaminant (CT) remaining on the substrate (W) in the simulation after the end of the plasma cleaning process simulation as the optimal distance.

[0093] In some embodiments, steps S220 and S230 may be performed using an artificial intelligence model. For example, the memory (122) of the electronic device (120) may store an artificial intelligence model that has learned a plasma cleaning process based on parameters required for simulation, such as the distance (BG) between the chip (C) and the substrate (W), the thickness of the substrate (W), and the material properties of the substrate (W). The artificial intelligence model may be a known artificial intelligence model, such as a convolutional neural network or a recurrent neural network. The electronic device (120) may input substrate state data into the artificial intelligence model using the artificial intelligence model to determine the optimal distance between the baffle (112) and the moving chuck (114).

[0094] At step S240, the electronic device (120) can provide optimal distance data corresponding to the optimal distance to the substrate processing device (110). The substrate processing device (110) can receive the optimal distance data and obtain the optimal distance between the baffle (112) and the moving chuck (114).

[0095] FIG. 6 is a cross-sectional view of a substrate processing device according to another embodiment of the present disclosure.

[0096] Fig. 6 can be described with reference to the aforementioned Figs. 1 and 2. The substrate processing device (210) of Fig. 6 may include a plasma source (211), a baffle (212), a plasma exhaust port (213), a moving chuck (214), an RF bias module (215), a distance measurement sensor (not shown), an angle measurement sensor (not shown), and a control circuit (not shown). In Fig. 6, any content overlapping with that of Fig. 2 will be omitted.

[0097] In FIG. 6, the baffle (212) can control the flow of plasma (PL) to provide plasma (PL) to the substrate (W) under the control of a control circuit (not shown). The baffle (212) can include a pattern layer (PT2) that allows plasma (PL) to pass therethrough, and the pattern layer (PT2) can control the angle (A) at which the plasma is provided to the substrate. For example, the angle (A) at which the plasma is provided to the substrate can be greater than 0° and less than or equal to 90°.

[0098] When the angle (A) at which the plasma is provided to the substrate is adjusted along with the distance (d) between the baffle (112) and the moving chuck (214), more precise control may be possible compared to the case where only the distance (d) between the baffle (212) and the moving chuck (214) is adjusted. For example, the control circuit (not shown) may control the baffle (212) so that the plasma (PL) is provided to the substrate (W) at 30°, 45°, 60°, and 90°. As described below with reference to FIG. 8, the electronic device (120) may determine the optimal angle at which the plasma (PL) is provided to the substrate (W) based on the substrate state data.

[0099] For example, if the electronic device (120) determines the optimal angle as 30°, the electronic device (120) can provide optimal angle data corresponding to 30° to the substrate processing device (210). The substrate processing device (210) can obtain the optimal angle based on the optimal angle data, and the control circuit (not shown) can control the baffle (212) using an angle measurement sensor (not shown) so that the plasma (PL) is provided to the substrate at 30°. In this way, only the distance (d) between the baffle (212) and the moving chuck (214) is adjusted, and the effect of removing contaminants (CT) can be more excellent than when the angle (A) at which the plasma (PL) is provided to the substrate (W) is fixed.

[0100] FIG. 7 is a flowchart showing an operation method of a substrate processing device according to another embodiment of the present disclosure.

[0101] Fig. 7 can be explained with reference to Figs. 1 to 6 described above. In Fig. 7, any content overlapping with Fig. 4 will be omitted. Unlike Fig. 4, Fig. 7 can illustrate a case where the angle (A) at which plasma (PL) is provided to the substrate (W) is adjusted along with the distance (d) between the baffle (212) and the moving chuck (214).

[0102] In step S310, the substrate processing device (210) may place the substrate (W) on top of the moving chuck (214). In some embodiments, the substrate processing device (210) may place the substrate (W) including at least one chip (C) bonded thereto and a contaminant (CT) on top of the moving chuck (214) through a bonding process.

[0103] At step S320, the substrate processing device (210) can measure the distance (BG) between the chip (C) and the substrate (W) and generate substrate condition data related to the distance (BG) between the chip (C) and the substrate (W).

[0104] At step S330, the substrate processing device (210) can obtain the optimal distance between the baffle (212) and the moving chuck (214) determined based on the substrate status data.

[0105] For example, as described above with reference to FIG. 4, the electronic device (120) can determine the optimal distance between the baffle (212) and the moving chuck (214) based on the substrate state data. The substrate processing device (210) can obtain the optimal distance between the baffle (212) and the moving chuck (214) by receiving the optimal distance data from the electronic device (120).

[0106] At step S340, the substrate processing device (210) can move the moving chuck (214) so ​​that the distance (d) between the baffle (212) and the moving chuck (214) corresponds to the optimal distance.

[0107] In step S350, the substrate processing device (210) can obtain an optimal angle determined based on substrate condition data. For example, the electronic device can determine an optimal angle at which plasma (PL) is provided to the substrate (W) based on the substrate condition data generated in step S320.

[0108] As described below with reference to FIG. 8, the electronic device (120) can perform a plasma cleaning process simulation based on substrate state data, and determine an optimal angle at which plasma (PL) is provided to the substrate (W) based on the simulation results. The electronic device (120) can generate optimal angle data corresponding to the optimal angle, and the substrate processing device (210) can receive the optimal angle data from the electronic device (120) to obtain an optimal angle at which plasma (PL) is provided to the substrate (W).

[0109] At step S360, the substrate processing device (210) can adjust the angle (A) at which the plasma (PL) is provided to the substrate (W) to correspond to the optimal angle. The control circuit (not shown) can control the baffle (212) to adjust the angle (A) at which the plasma (PL) is provided to the substrate (W) to correspond to the optimal angle obtained at step S350.

[0110] At step S370, the substrate processing device (210) can provide plasma (PL) toward the substrate (W).

[0111] FIG. 8 is a flowchart illustrating an operating method of an electronic device according to another embodiment of the present disclosure.

[0112] Fig. 8 can be explained with reference to Figs. 1 to 7 described above. Fig. 8 can show a case in which the optimal angle at which plasma (PL) is provided to the substrate (W) is determined, unlike the case in which the optimal distance between the baffle (112) and the moving chuck (114) in Fig. 5 is determined.

[0113] At step S410, the electronic device (120) can receive substrate status data. The substrate status data can include data on the status of the substrate (W), such as the distance (BG) between the chip (C) and the substrate (W), the thickness of the substrate (W), and the physical properties of the substrate (W).

[0114] In step S420, the electronic device (120) can obtain residual contaminant data by performing a plasma cleaning process simulation based on substrate state data.

[0115] For example, the simulation module (121) of the electronic device (120) can adjust parameters required for the simulation, such as the distance (BG) between the chip (C) and the substrate (W), the thickness of the substrate (W), and the material properties of the substrate (W), based on the substrate state data. In addition, the simulation module (121) can perform a plasma cleaning process simulation by adjusting the angle (A) at which the plasma (PL) in the simulation is provided to the substrate (W). After the plasma cleaning process simulation is completed, the electronic device (120) can store the size of the contaminant (CT) remaining on the substrate (W) in the simulation in the memory (122) to obtain residual contaminant data according to the angle (A) at which the plasma (PL) is provided to the substrate (W).

[0116] At step S430, the electronic device (120) can determine the optimal angle at which the plasma (PL) is provided to the substrate (W) based on the residual contaminant data. For example, the electronic device (120) can determine the angle corresponding to the smallest size of the contaminant (CT) remaining on the substrate (W) in the simulation after the end of the plasma cleaning process simulation as the optimal angle at which the plasma (PL) is provided to the substrate (W).

[0117] In some embodiments, steps S420 and S430 may be performed using an artificial intelligence model. As described above with reference to FIG. 5, the memory (122) of the electronic device (120) may store an artificial intelligence model that has learned a plasma cleaning process based on parameters required for simulation, such as the distance (BG) between the chip (C) and the substrate (W), the thickness of the substrate (W), and the properties of the substrate (W). The electronic device (120) may input substrate state data into the artificial intelligence model using the artificial intelligence model to determine an optimal angle at which the plasma (PL) is provided to the substrate (W).

[0118] At step S440, the electronic device (120) can provide optimal angle data corresponding to the optimal angle to the substrate processing device (210). The substrate processing device (210) can obtain the optimal angle based on the received optimal angle data.

[0119] The graphs shown in FIGS. 9a, 9b, and 9c can represent the velocity of the plasma (PL) according to the position. When the velocity of the plasma (PL) between the chip (C) and the substrate (W) is high, the plasma (PL) with high kinetic energy can collide with the contaminant (CT) remaining between the chip (C) and the substrate (W). Therefore, the higher the velocity of the plasma (PL) between the chip (C) and the substrate (W), the smaller the size of the contaminant (CT) remaining on the substrate (W) within the simulation after the plasma cleaning process simulation ends.

[0120] Referring to FIGS. 9a, 9b, and 9c, the velocity of the plasma (PL) between the chip (C) and the substrate (W) in FIG. 9c is higher than that in FIG. 9a, and the velocity of the plasma (PL) between the chip (C) and the substrate (W) in FIG. 9b may be higher than that in FIG. 9c. Accordingly, the size of the contaminant (CT) remaining on the substrate (W) within the simulation after the end of the plasma cleaning process simulation may be written in the order of FIGS. 9b, 9c, and 9a.

[0121] The electronic device can store the size of the contaminant (CT) remaining on the substrate (W) within the simulation after the simulation ends in the memory (122), and use it to determine the optimal distance between the baffle (212) and the moving chuck (214) or the optimal angle at which the plasma (PL) is provided to the substrate (W).

[0122] Meanwhile, the embodiments disclosed in this specification may be implemented in the form of a recording medium that stores computer-executable instructions. The instructions may be stored in the form of program code, and when executed by a processor, may generate program modules to perform the operations of the disclosed embodiments. The recording medium may be implemented as a computer-readable recording medium. The computer-readable recording medium may include any type of recording medium that stores instructions that can be deciphered by a computer. Examples thereof include ROM, RAM, magnetic tape, magnetic disk, flash memory, and optical data storage devices.

[0123] The above-described embodiments are specific examples for implementing the present disclosure. The present disclosure will encompass not only the above-described embodiments, but also embodiments that can be simply designed or easily modified. Furthermore, the present disclosure will encompass techniques that can be easily modified and implemented using the above-described embodiments. Therefore, the scope of the present disclosure should not be limited to the above-described embodiments, but should be defined not only by the claims set forth below, but also by equivalents of the claims of the present disclosure.

Claims

1. In a substrate processing device that performs a plasma cleaning process on a substrate on which at least one chip is bonded and contains contaminants, A moving chuck supporting the above substrate; A plasma source for generating plasma and irradiating the plasma toward the substrate; A baffle that controls the flow of the plasma to provide the plasma to the substrate; and Including a control circuit for moving the moving chuck so that the distance between the baffle and the moving chuck corresponds to an optimal distance, A substrate processing device, characterized in that the optimal distance is determined based on the distance between the at least one chip and the substrate.

2. In paragraph 1, The above baffle includes a pattern layer that passes the plasma, A substrate processing device characterized in that the pattern layer adjusts the angle at which the plasma is provided with respect to the substrate.

3. In paragraph 2, A substrate processing device wherein the above angle is determined based on the distance between the at least one chip and the substrate.

4. In paragraph 2, A substrate processing device wherein the above angle is determined so that the plasma is provided perpendicular to the top of the substrate.

5. In paragraph 1, A substrate processing device, characterized in that the distance between at least one chip and the substrate is greater than 0 and less than 30 um.

6. In paragraph 1, The above plasma source is, A substrate processing device characterized by an ICP (Inductively Coupled Plasma) source that forms the plasma by using a magnetic field generated by flowing a high-frequency current through a coil.

7. In paragraph 1, The above substrate processing device, A substrate processing device further comprising an RF bias module that applies an RF (Radio Frequency) bias voltage to the moving chuck.

8. A step of placing a substrate including at least one chip bonded and a contaminant on top of a moving chuck through a bonding process; A step of measuring a distance between the at least one chip and the substrate and generating substrate condition data related to the distance between the at least one chip and the substrate; A step of obtaining an optimal distance between the baffle and the moving chuck determined based on the substrate status data; A step of moving the moving chuck so that the distance between the baffle and the moving chuck corresponds to the optimal distance; and A method of operating a substrate processing device, characterized in that it comprises a step of irradiating plasma toward the substrate.

9. In paragraph 8, The above method, A step of obtaining an optimal angle at which the plasma is provided to the substrate based on the distance between the at least one chip and the substrate; and A method of operating a substrate processing device, characterized in that it further comprises a step of adjusting the angle at which the plasma is provided to the substrate so as to correspond to the optimal angle.

10. In paragraph 8, The above method, A method of operating a substrate processing device, characterized in that it further comprises a step of applying an RF (Radio Frequency) bias voltage to the moving chuck.

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