Clamping mode selection for substrate processing

Abstract

A system includes a substrate support having a first electrode and a second electrode configured to clamp a substrate to the substrate support, a first power supply configured to output a positive voltage, a second power supply configured to output a negative voltage, switching devices coupled between the electrodes and the first and second power supplies, and a controller. The controller is configured to receive a mode selection signal, and in response, control the switching devices in a bipolar mode to enable the first power supply to output the positive voltage to the first electrode and the second power supply to output the negative voltage to the second electrode, or in a monopolar mode to enable one of the first power supply or the second power supply to output the positive voltage or the negative voltage to the first electrode and the second electrode.

Description

Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POACLAMPING MODE SELECTION FOR SUBSTRATE PROCESSINGCROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 683,067 filed on August 14, 2024. The entire disclosure of the above application is incorporated herein by reference.FIELD

[0002] The present disclosure relates to substrate processing, and more particularly to clamping mode selection for substrate processing.BACKGROUND

[0003] The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

[0004] A substrate processing system may be used to treat substrates such as semiconductor wafers in a processing chamber. Example processes that may be performed on a substrate include chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etch, and / or other etch, deposition, or cleaning processes. In the processing chamber, a substrate may be arranged on a substrate support having an electrostatic chuck (ESC) and an edge ring surrounding the ESC. During etching, gas mixtures may be introduced into the processing chamber and plasma may be used to initiate chemical reactions.

[0005] During processing, the substrate is often clamped to the ESC of the substrate support. In doing so, the substate is held in a repeatable position relative to the ESC, where a uniform temperature across the substrate and a flatness of the substrate may be maintained. To clamp the substrate to the ESC, one or more voltages are applied to clamping electrodes in the ESC to charge the clamping electrodes. Then, a presence of oppositely charged regions in the substrate results in induced electrostatic forces to clamp the substrate and the ESC together.Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POASUMMARY

[0006] A system includes a substrate support positioned within a substrate processing chamber. The substrate support includes electrodes having at least a first electrode and a second electrode configured to clamp a substrate to the substrate support. The system further includes a first power supply configured to output a positive voltage, a second power supply configured to output a negative voltage, switching devices coupled between the electrodes and the first and second power supplies, and a controller in communication with the switching devices. The controller is configured to receive a mode selection signal, and in response to the mode selection signal, control the switching devices in a bipolar mode to enable the first power supply to output the positive voltage to the first electrode and the second power supply to output the negative voltage to the second electrode, or in a monopolar mode to enable one of the first power supply or the second power supply to output the positive voltage or the negative voltage to the first electrode and the second electrode.

[0007] In other features, the controller is configured to receive a polarity signal, and in response to the polarity signal, control the switching devices in the bipolar mode to enable the first power supply to output the positive voltage to the second electrode and the second power supply to output the negative voltage to the first electrode, or in the monopolar mode to enable the other one of the first power supply or the second power supply to output the positive voltage or the negative voltage to the first electrode and the second electrode.

[0008] In other features, the controller is configured to control the switching devices in response to the polarity signal when the substrate is clamped to substrate support.

[0009] In other features, the switching devices include a plurality of relays.

[0010] In other features, the plurality of relays includes four relays.

[0011] In other features, the four relays are normally open.

[0012] In other features, the plurality of relays include a first relay and a second relay coupled to the first power supply, and a third relay and a fourth relay coupled to the second power supply.

[0013] In other features, the first relay is coupled between the first power supply and the first electrode, the second relay is coupled between the first power supply and the second electrode, the third relay is coupled between the second power supply and theAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA first electrode, and the fourth relay is coupled between the second power supply and the second electrode.

[0014] In other features, the first relay and the third relay are coupled together at a first connection point, the second relay and the fourth relay are coupled together at a second connection point, and the controller is configured to sense electrical parameters on output sides of the first connection point and the second connection point, detect a failure based on the sensed parameters, and disable the first and second power supplies in response to the detected failure.

[0015] In other features, the controller is configured to receive the mode selection signal based on user input.

[0016] In other features, the controller is configured to receive the mode selection signal based on a sensed parameter associated with the substrate.

[0017] In other features, the sensed parameter associated with the substrate is an identifier on the substrate.

[0018] In other features, the controller is configured to receive a clamp voltage setpoint, and control the first power supply and the second power supply based on the received clamp voltage setpoint when the switching devices are controlled in the bipolar mode.

[0019] In other features, the controller is configured to receive a bias compensation voltage setpoint, and control the first power supply and the second power supply based on the received clamp voltage setpoint and the received bias compensation voltage setpoint when the switching devices are controlled in the bipolar mode.

[0020] In other features, the controller is configured to receive a clamp voltage setpoint, and control one of the first power supply or the second power supply based on the received clamp voltage setpoint when the switching devices are controlled in the monopolar mode.

[0021] In other features, the controller is configured to receive a bias compensation voltage setpoint, and control one of the first power supply or the second power supply based on the received clamp voltage setpoint and the received bias compensation voltage setpoint when the switching devices are controlled in the monopolar mode.

[0022] In other features, the switching devices include an input side coupled to the first and second power supplies and an output side coupled to the electrodes, and theAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA controller is configured to sense at least one electrical parameter on the output side of the switching devices, detect a failure based on the sensed electrical parameter, and disable the first and second power supplies in response to the detected failure.

[0023] A method for enabling mode switching between a bipolar mode and a monopolar mode, includes receiving a substrate on a substrate support positioned within a substrate processing chamber. The substrate support includes electrodes having at least a first electrode and a second electrode. The method further includes receiving a mode selection signal, and in response to the mode selection signal, controlling switching devices coupled between the electrodes and first and second power supplies in a bipolar mode to enable the first power supply to output a positive voltage to the first electrode and the second power supply to output a negative voltage to the second electrode, or in a monopolar mode to enable one of the first power supply or the second power supply to output the positive voltage or the negative voltage to the first electrode and the second electrode.

[0024] In other features, the method further includes receiving a polarity signal, and in response to the polarity signal, controlling the switching devices in the bipolar mode to enable the first power supply to output the positive voltage to the second electrode and the second power supply to output the negative voltage to the first electrode, or in the monopolar mode to enable the other one of the first power supply or the second power supply to output the positive voltage or the negative voltage to the first electrode and the second electrode.

[0025] In other features, the switching devices include a plurality of relays.

[0026] In other features, the plurality of relays includes four normally open relays.

[0027] In other features, the plurality of relays include a first relay and a second relay coupled to the first power supply, and a third relay and a fourth relay coupled to the second power supply.

[0028] In other features, the first relay is coupled between the first power supply and the first electrode, the second relay is coupled between the first power supply and the second electrode, the third relay is coupled between the second power supply and the first electrode, and the fourth relay is coupled between the second power supply and the second electrode.Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA

[0029] In other features, the first relay and the third relay are coupled together at a first connection point, the second relay and the fourth relay are coupled together at a second connection point, and the method further includes sensing electrical parameters on output sides of the first connection point and the second connection point, detecting a failure based on the sensed parameters, and disabling the first and second power supplies in response to the detected failure.

[0030] In other features, receiving the mode selection signal includes receiving the mode selection signal based on user input.

[0031] In other features, receiving the mode selection signal includes receiving the mode selection signal based on a sensed parameter associated with the substrate.

[0032] In other features, the sensed parameter associated with the substrate is an identifier on the substrate.

[0033] In other features, the method further includes receiving a clamp voltage setpoint, and controlling the first power supply and the second power supply based on the received clamp voltage setpoint when the switching devices are controlled in the bipolar mode.

[0034] In other features, the method further includes receiving a bias compensation voltage setpoint, and controlling the first power supply and the second power supply based on the received clamp voltage setpoint and the received bias compensation voltage setpoint when the switching devices are controlled in the bipolar mode.

[0035] In other features, the method further includes receiving a clamp voltage setpoint, and controlling one of the first power supply and the second power supply based on the received clamp voltage setpoint when the switching devices are controlled in the monopolar mode.

[0036] In other features, the method further includes receiving a bias compensation voltage setpoint, and controlling one of the first power supply and the second power supply based on the received clamp voltage setpoint and the received bias compensation voltage setpoint when the switching devices are controlled in the monopolar mode.

[0037] In other features, the switching devices include an input side coupled to the first and second power supplies and an output side coupled to the electrodes, and the method further includes sensing at least one electrical parameter on the output side ofAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA the switching devices, detecting a failure based on the sensed electrical parameter, and disabling the first and second power supplies in response to the detected failure.

[0038] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure.BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0040] FIG. 1 is a block diagram of an example substrate processing system, according to the present disclosure;

[0041] FIG. 2 is a block diagram of another example substrate processing system including controllable switching devices coupled between two power supplies and clamping electrodes, according to the present disclosure;

[0042] FIG. 3 is a block diagram of another example substrate processing system including four controllable relays coupled between two power supplies and clamping electrodes, according to the present disclosure;

[0043] FIGS. 4A-D are block diagrams of example mode scenarios where the relays of FIG. 3 are controlled to selectively couple one of the power supplies to one or both of the clamping electrodes, according to the present disclosure;

[0044] FIGS. 5A-B are block diagrams of example substrate supports having different substrates clamped thereon, according to the present disclosure;

[0045] FIG. 6 is a block diagram of another example substrate processing system including controllable relays and sensors for detection failures and / or automatic health checks relating to the control of the relays, according to the present disclosure;

[0046] FIG. 7 is a block diagram of another example substrate processing system, according to the present disclosure;

[0047] FIG. 8 is a flow chart of an example method for selecting a clamping mode and polarity in a substrate processing system, according to the present disclosure;Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA

[0048] FIG. 9 is a flow chart of another example method for selecting a clamping mode and polarity in a substrate processing system, according to the present disclosure; and

[0049] FIG. 10 is a flow chart of an example method for detecting failures relating to the control of switching devices, according to the present disclosure.

[0050] In the drawings, reference numbers may be reused to identify similar and / or identical elements.DETAILED DESCRIPTION

[0051] In a processing chamber of a substrate processing system, a substrate may be arranged on a substrate support having an electrostatic chuck (ESC). During processing, the substrate may be clamped to the ESC by applying one or more voltages to clamping electrodes (e.g., chuck electrodes) in the ESC. Then, a presence of oppositely charged regions in the substrate results in induced electrostatic forces to clamp the substrate and the ESC together. Generally, the clamping of the substrate and the ESC is accomplished through bipolar clamping or monopolar clamping depending on, for example, the type of the substrate (e.g., wafer, etc.) being processed. In such scenarios, dedicated conductor chambers are employed for bipolar-only clamping while dedicated dielectric chambers are employed for monopolar-only clamping.

[0052] For example, for conductive substrate processing in a conductor chamber, bipolar clamping is used where two poles of electrostatic positive and negative charges are distributed across the conductive substrate (e.g., a silicon or glass wafer with a conductive film). For dielectric substrate processing, however, this charge separation along the distance is not possible. As such, for dielectric substrate processing in a dielectric chamber, monopolar clamping is used where one pole of an electrostatic positive or negative charge is distributed across and through the thickness of the dielectric substrate (e.g., a glass wafer). In such examples, plasma (e.g., transformer coupled plasma (TCP), etc.) may be used as a conductive volume to enable this charge separation. In other words, monopolar clamping relies on plasma impedance to close the circuit and move the charges. This severely impacts the throughput capabilities. As such, while the monopolar clamping enables a larger electrostatic force for the same voltage as compared to the bipolar clamping, throughput may be reduced due to plasma on-time before chucking and de-chucking (e.g., clamping and de-clamping) of the substrate.Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA

[0053] Additionally, the demand for silicon on glass carrier substrates is expanding. For example, silicon on glass carrier substrates are commonly used for system-on-a- chip (SoC) applications. In such examples, the substrate (e.g., wafer) includes a layer of glass adjacent to the ESC during processing and a layer of silicon on the glass. In such examples, the close interface of glass for this type of substrate requires the use of monopolar clamping. However, at some point during substrate processing, the silicon is separated from the glass and is processed as silicon only. Thus, while monopolar clamping is no longer required during this time, clamping remains in the same monopolar mode causing reduced throughput.

[0054] The processing systems and methods according to the present disclosure enable the control of the clamping mode selection between a bipolar clamping mode and a monopolar clamping mode. As such, with the processing systems and methods herein, a desired clamping mode, such as a bipolar clamping mode or a monopolar clamping, may be initially selected as further explained herein. Then, if desired, the selected clamping mode may be switched to another clamping mode (e.g., a monopolar clamping mode to a bipolar clamping mode or vice versa). In such examples, the selection of and / or switching between clamping modes may occur before commencement of substrate processing, during substrate processing, etc. Through the selection of and / or switching between clamping modes, the processing of different types of substrates (e.g., conductive substrates, dielectric substrates, silicon on glass carrier substrates, etc.) may be completed with the same substrate processing system (e.g., the same processing chamber), while also maintaining desirable throughput capabilities for the different types of substrates (e.g., Si wafers, etc.).

[0055] Additionally and / or alternatively, the processing systems and methods herein enable the control of polarity selection associated with a clamping mode, as further explained herein. For example, and similar to the clamping mode control, the selection of and / or switching between the desired polarity may occur before commencement of substrate processing, during substrate processing, etc. In doing so, the desired polarity or configuration thereof may be controlled during select periods of the substrate processing, such as before or after chucking (e.g., clamping) of the substrate, before de-chucking (e.g., de-clamping) of the substrate, etc.

[0056] Referring now to FIG. 1 , an example substrate processing system 100 is shown utilizing the clamping mode selection according to the present disclosure. As examplesAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA only, the substrate processing system 100 may be used for performing etching using RF plasma and / or other suitable substrate processing. While a specific type of substrate processing system is shown for the purpose of illustration, other types of substrate processing systems may be used.

[0057] As shown, the substrate processing system 100 includes a processing chamber 108 for processing substrate processing. The processing chamber 108 includes a substrate support (or pedestal) 120 for supporting a substrate 132. In the example of FIG. 1 , the substrate support 120 includes an ESC 126. In some examples, the substrate support 120 includes a baseplate 122 including cooling channels 124 and a bonding layer 128. An edge ring 134 of the substrate support 120 is arranged around the ESC. The ESC 126 may include resistive heaters for heating the substrate and / or electrodes (e.g., conductors) 130 for electrostatically clamping the substrate 132.

[0058] The processing chamber 108 includes a chamber port 137, a chamber door 138, and an actuator (not shown) for selectively moving the chamber door 138 to open and close the chamber port 137. A chamber liner 133 surrounds the substrate support 120 and includes a slot 135 arranged near and aligned with the chamber port 137 to allow substrates to be delivered and removed. In some examples, the chamber port 137 of the processing chamber 18 is attached to a vacuum transfer module (not shown). Additionally, in various embodiments, the substrate processing system 100 may further include a robot (not shown) to control delivery and removal of substrates relative to the processing chamber 108.

[0059] In the example of FIG. 1 , the processing chamber 108 further includes a sensor 139 positioned adjacent to the chamber port 137. In such examples, the sensor 139 may sense or otherwise detect a parameter associated with the substrate 132 as, for example, the substrate 132 is delivered through the chamber port 137. In various embodiments, the parameter associated with the substrate 132 may include an identifier, such as a barcode, a QR code, etc. that specifies a type of the substrate 132 (e.g., conductive substrate, dielectric substrate, silicon on glass carrier substrate, etc.). In such examples, the sensor 139 may be a camera, a light sensor (e.g., a laser, an infrared, etc. sensor) that emits and detects reflected light, etc.

[0060] In some examples, a plenum 144 may be arranged between one or more coils 164 and a dielectric window 142 to control the temperature of the dielectric window 142Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA with hot and / or cold gas (e.g., air) flow. The dielectric window 142 is arranged along one side of the processing chamber 108.

[0061] A gas delivery system 170 may be used to supply process gas mixtures to the processing chamber 108. The gas delivery system 170 may include process, carrier, and / or inert gas sources 172, a gas metering system 174 (such as valves and mass flow controllers), and a manifold 176 for mixing the gases. A gas delivery system 180 may be used to deliver gas from one or more gas sources 182 via a valve 184 to the plenum 144. The gas may include cooling gas (e.g., air) that is used to cool the coils 164 and the dielectric window 142.

[0062] As shown in FIG. 1 , the substrate processing system 100 may further include a temperature controller 110 and an exhaust system 190. In this example, the temperature controller 110 may be used to control heating / cooling of the substrate support 120 to a predetermined temperature. For example, the temperature controller 110 may be used to control resistive heaters in the ESC 126 and / or flow of cooling fluid to the cooling channels 124. As shown, the exhaust system 190 includes a valve 192 and pump 194 to control pressure within the processing chamber 108 and / or to remove reactants from the processing chamber 108 by purging or evacuation.

[0063] Process gas is supplied to the processing chamber 108 and plasma 140 may be generated inside of the processing chamber 108 during substrate treatment such as deposition or etching. If plasma is used, the substrate processing system 100 includes an RF plasma generator 150. In some examples, the RF plasma generator 150 includes an RF source 152, a pulsing circuit 154, and a tuning circuit 158. The pulsing circuit 154 controls an envelope of the RF signal and varies a duty cycle of envelope during operation. The tuning circuit 158 may be directly connected to one or more coils 164. In some examples, a single inductive coil is used. In other examples, multiple inductive coils each including one or more conductors are used. The tuning circuit 158 tunes an output of the RF source 152 to a desired frequency and / or a desired phase, matches an impedance of the coils 164, and / or splits power between the coils 164. As can be appreciated, the pulsing circuit 154 and the RF source 152 can be combined or separate.

[0064] Additionally, and as shown in FIG. 1 , the substrate processing system 100 further includes an RF bias generator 136 that selectively provides an RF bias to the substrate support 120. For example, in FIG. 1 , the RF bias generator 136 includes oneAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA or more RF bias sources 146, a pulsing circuit 148, and a bias matching circuit 156 to selectively provide the RF bias to the substrate support 120 if needed. In various embodiments, the pulsing circuit 148 and the RF bias source 146 can be combined or separate.

[0065] As shown, the substrate processing system 100 further includes a clamp voltage system 160. In the example of FIG. 1 , the clamp voltage system 160 may include two high voltage power supplies and a set of switching devices (not shown) to output a positive voltage and / or a negative voltage to the electrodes (e.g., clamp electrodes) 130 in the ESC 126 for electrostatically clamping the substrate 132 to the ESC 126. In particular, and as further explained herein, the switching devices may be controlled in a bipolar mode or a monopolar mode. In the bipolar mode, the switching devices are controlled to enable or allow one high voltage power supply (of the clamp voltage system 160) to output a positive voltage to a subset (e.g., one or more first clamp electrodes) of the clamp electrodes 130 in the ESC 126 and another high voltage power supply (of the clamp voltage system 160) to output a negative voltage to another subset (e.g., one or more second clamp electrodes) of the clamp electrodes 130. In the monopolar mode, the switching devices are controlled to enable or allow one of the power supplies to output a positive or negative voltage to the clamp electrodes 130.

[0066] In the example of FIG. 1 , the substrate processing system 100 further includes a controller 166 that may be used to control various aspects of the etching process. For example, the controller 166 may monitor system parameters and control delivery of the gas mixture, striking, maintaining, and / or extinguishing the plasma (if used), the RF bias (if used), substrate temperature, removal of reactants, supply of cooling gas, pressure, and so on. Additionally, the controller 166 may also be used to control the clamp voltage system 160, and more specifically the switching devices and power supplies of the clamp voltage system 160 as further explained herein.

[0067] Referring now to FIG. 2, an example portion of a substrate processing system 200 is shown. In the example of FIG. 2, the substrate processing system 200 is similar to the substrate processing system 100 of FIG. 1 but includes components of the clamp voltage system 160. For example, the substrate processing system 200 includes the substrate support 120 of FIG. 1 , high voltage power supplies 210, 220, switching devices 230, and the controller 166 of FIG. 1 . In various embodiments, the high voltage power supplies 210, 220, the switching devices 230, and the controller 166 may beAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA housed in an enclosure 232 (e.g., a single unit enclosure) as shown in FIG. 2. In other examples, one or more of the high voltage power supplies 210, 220, the switching devices 230, and the controller 166 may be housed in separate enclosures if desired. As shown, the substrate support 120 includes the baseplate 122 and the ESC 126 having clamping electrodes 130A, 130B embedded therein. While the substrate processing system 200 of FIG. 2 is shown as including two clamping electrodes 130A, 130B, it should be appreciated that the system 200 and / or any other example system herein may include more than two clamping electrodes.

[0068] In various embodiments, the clamping electrodes 130A, 130B may form different electrode patterns. For example, the clamping electrodes 130A, 130B may represent separate electrically isolated electrodes that form a C clamp configuration in which the clamping electrode 130A forms one set of C-shaped portions and the clamping electrode 130B forms another set of C-shaped portions. In other examples, the clamping electrodes 130A, 130B may represent separate electrically isolated electrodes that form a pizza clamp configuration in which the clamping electrodes 130A, 130B form alternating triangular-shaped portions (e.g., pizza slices).

[0069] In the example of FIG. 2, the switching devices 230 are coupled between the electrodes 130A, 130B and the power supplies 210, 220. In other words, input sides of the switching devices 230 are coupled to output sides of the power supplies 210, 220, and output sides of the switching devices 230 are coupled to the electrodes 130A, 130B.

[0070] In various embodiments, the power supplies 210, 220 may output different voltages to the clamping electrodes 130A, 130B based on control of the switching devices 230. For example, the power supply 210 may be a positive DC power supply for outputting a positive DC voltage to one or both of the clamping electrodes 130A, 130B based on states of the switching devices 230. Additionally, the power supply 220 may be a negative DC power supply for outputting a negative DC voltage to one or both of the clamping electrodes 130A, 130B based on states of the switching devices 230. In such examples, and as explained above, the voltage(s) applied to the clamping electrodes 130A, 130B in the ESC 126 are used to clamp the substrate 132 to the substrate support 120. During this time when the substrate 132 is clamped to the substrate support 120, the plasma 140 may be generated during substrate treatment, as explained above.Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA

[0071] As shown in FIG. 2, the controller 166 is in communication with the switching devices 230 via one or more control signals. In doing so, the controller 166 can control the switching devices 230 to operate in a selected bipolar mode or monopolar mode. This mode selection by the controller 166 may be achieved in any suitable manner. For example, the controller 166 may receive a mode selection signal 240 indicating a particular mode (e.g., a bipolar mode or a monopolar mode). In some examples, the controller 166 may function in a default mode (e.g., a bipolar mode) and the mode selection signal 240 may indicate that another mode (e.g., monopolar mode) has been selected.

[0072] In various embodiments, the controller 166 may receive the mode selection signal 240 based on different inputs. For example, in some examples, the controller 166 may receive the mode selection signal 240 based on user input. In such examples, a user may select an input representing a bipolar mode or an input representing a monopolar mode to generate the mode selection signal 240. In other examples, the controller 166 may receive the mode selection signal 240 based on a sensed parameter associated with the substrate 132. For example, when the substate 132 is being delivered to a processing chamber, a sensor (e.g., the sensor 139 of FIG. 1 ) may sense or otherwise detect a parameter associated with the substrate 132, such as an identifier on the substrate 132. In such examples, the controller 166 may receive a signal from the sensor based on the parameter representing a particular type of the substrate 132 (e.g., conductive substrate, dielectric substrate, silicon on glass carrier substrate, etc.). Then, based on the received signal, the controller 166 can select an appropriate mode (e.g., a bipolar mode or monopolar mode). In other examples, the controller 166 receives the mode selection signal 240 based on both user input and the sensed parameter associated with the substrate 132. In such examples, the controller 166 may receive the user mode selection (e.g. a bipolar mode or a monopolar mode) and then confirm that mode selection based on the sensed parameter associated with the substrate 132.

[0073] Then, the controller 166 controls the switching devices 230 in response to the mode selection signal 240. For example, if the mode selection signal 240 is representative of a bipolar mode, the controller 166 selectively controls the switching devices 230 to enable the power supply 210 to output the positive voltage to the electrode 130A and the power supply 220 to output the negative voltage to the electrode 130B. In other examples, if the mode selection signal 240 is representative ofAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA a monopolar mode, the controller 166 selectively controls the switching devices 230 to enable the power supply 210 to output the positive voltage to both electrodes 130A, 130B or the power supply 220 to output the negative voltage to both electrodes 130A, 130B. In either case, the controller 166 may provide control signals to some or all of the switching devices 230 to alter states of the controlled switching devices 230 based on the mode selection signal 240. In doing so, the controller 166 operates in a bipolar mode or a monopolar mode in which different sets of the switching devices 230 are controlled to turn on (e.g., close, conduct, etc.) to selectively connect the power supply 210 and / or the power supply 220 to the electrode 130A and / or the electrode 130B, thereby allowing power to pass from the power supply 210 and / or the power supply 220 to the electrodes 130A, 130B.

[0074] Additionally, in some embodiments, the controller 166 can control the switching devices 230 to operate in a manner to achieve a selected polarity with respect to the electrodes 130A, 130B. This polarity selection may be achieved in any suitable manner. For example, the controller 166 may receive a polarity signal 250 indicating a particular polarity or polarity configuration (e.g., positive, negative, a first polarity configuration, a second polarity configuration, etc.). In some examples, the controller 166 may function in a default polarity (e.g., a positive polarity) and the polarity signal 250 may indicate a desired to reverse polarity (e.g., a negative polarity). In either case, the controller 166 may receive the polarity signal 250 based on one or more different inputs, such as based on user input, etc.

[0075] The controller 166 then controls the switching devices 230 in response to the polarity signal 250. For example, if the polarity signal 250 is representative of reversing the polarity and the switching devices 230 are being operated in a bipolar mode, the controller 166 selectively controls the switching devices 230 to enable the power supply 210 to output a positive voltage to the electrode 130B and the power supply 220 to output a negative voltage to the electrode 130A. In other examples, if the polarity signal 250 is representative of reversing the polarity and the switching devices 230 are being operated in a monopolar mode, the controller 166 selectively controls the switching devices 230 to enable the power supply 220 to output a negative voltage to the electrode 130A and the electrode 130B. Alternatively, if the polarity signal 250 is representative of forward or positive polarity and the switching devices 230 are being operated in a monopolar mode, the controller 166 selectively controls the switching devices 230 to enable the power supply 210 to output a negative voltage to theAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA electrode 130A and the electrode 130B. In such scenarios, the controller 166 may provide control signals to some or all of the switching devices 230 to alter states of the controlled switching devices 230 based on the polarity signal 250.

[0076] In various embodiments, the controller 166 may change between modes and / or polarity before commencement of substrate processing or during substrate processing. For example, the controller 166 may initially select a particular clamping mode and a particular polarity before a substrate is processed. In such examples, the selection of the clamping mode and polarity may occur before the substrate is processed, between when a previous substrate is processed and the substrate begins processing, etc. With this configuration, the selected mode and polarity may remain fixed throughout the processing of the substrate 132.

[0077] In other examples, the controller 166 may change the clamping mode and / or polarity during processing. For example, the controller 166 may receive a new mode selection signal 240 and / or polarity signal 250 during the processing of the substate 132. In such examples, the controller 166 can control the switching devices 230 in response to the new mode selection signal 240 and / or polarity signal 250 when, for example, the substrate 132 is clamped to substrate support 120. For instance, the controller 166 may reverse the polarity of the electrodes 130A, 130B before dechucking (or de-clamping) of the substrate 132. This may enhance de-chucking of the substrate 132. Additionally, in some examples, the controller 166 may change the clamping mode (e.g., a monopolar mode to a bipolar mode or vice versa) depending on the type of the substrate 132, parameters associated with the substrate 132, etc. For example, if the substrate 132 is a silicon on glass carrier substrate, the controller 166 may initially control the switching devices 230 in a monopolar mode, and then switch to a bipolar mode after the silicon is separated from the glass, as explained herein.

[0078] In the example of FIG. 2, the switching devices 230 may be any suitable number of switches and any suitable type of electrical switch device for interrupting or allowing the flow of current. For example, the switching devices 230 may be relays, MOSFETs, TRIACs, etc. Additionally, the switching devices 230 may include at least two switches for enabling desired clamping mode selection and / or polarity selection. For example, the switching devices 230 may include two relays, four relays, sixteen relays, etc.Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA

[0079] FIG. 3 depicts one example of the switching devices 230 of FIG. 2 as including four relays. For example, in FIG. 3, a portion of a substrate processing system 300 is shown as including the positive DC power supply 210, the negative DC power supply 220, the controller 166, and the electrodes 130A, 130B of FIG. 2, and four relays 330, 340, 350, 360 coupled between the electrodes 130A, 130B and the power supplies 210, 220. In the example of FIG. 3, the relays 330, 340, 350, 360 are normally open relays. In such examples, high voltage from the power supplies 210, 220 may be prevented from passing during undefined operating conditions. In other examples, one or more of the relays 330, 340, 350, 360 may be normally closed relays if desired.

[0080] As shown in FIG. 3, each relay 330, 340, 350, 360 is coupled between a different set of one of the power supplies 210, 220 and one of the electrodes 130A, 130B. For example, the relay 330 includes an input side coupled to the power supply 210 and an output side coupled to the electrode 130A, the relay 340 includes an input side coupled to the power supply 210 and an output side coupled to the electrode 130B, the relay 350 includes an input side coupled to the power supply 220 and an output side coupled to the electrode 130A, and the relay 350 includes an input side coupled to the power supply 220 and an output side coupled to the electrode 130B. In this example, inputs of the relays 330, 340 are coupled together (e.g., at a connection point), inputs of the relays 350, 360 are coupled together, outputs of the relays 330, 350 are coupled together, and outputs of the relays 340, 360 are coupled together. In this manner, each power supply 210, 220 may be selectively coupled to either electrode 130A, 130B via one of the relays 330, 340, 350, 360.

[0081] For example, the controller 166 may control the relays 330, 340, 350, 360 in response to input signals (e.g., the mode selection signal 240 and / or the polarity signal 250 of FIG. 2) to selectively couple one of the power supplies 210, 220 to one or both of the electrodes 130A, 130B. In doing so, the controller 166 may control the relays 330, 340, 350, 360 via control signals 314, 316, 318, 320, respectively, to cause operation in a selected clamping mode (e.g., a bipolar mode or a monopolar mode) and polarity configuration, as explained herein.

[0082] For instance, FIGS. 4A-D depict different mode scenarios 400, 410, 420, 430 in which the controller 166 of FIG. 3 controls the relays 330, 340, 350, 360 to selectively couple one of the power supplies 210, 220 to one or both of the electrodes 130A, 130B. In these examples, the mode scenarios 400, 410 of FIGS. 4A-B are bipolar modesAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA having opposite polarity configurations and the mode scenarios 420, 430 of FIGS. 4C-D are monopolar modes having opposite polarity configurations.

[0083] For example, in the mode scenario 400 of FIG. 4A, the relays 340, 350 are on (e.g., closed) and the relays 330, 360 are off (e.g., open) to allow the power supply 210 to provide a positive DC volage to the electrode 130B and the power supply 220 to provide a negative DC volage to the electrode 130A. Conversely, in FIG. 4B, the mode scenario 410 has the same mode (a bipolar mode) but with a reverse polarity configuration as compared to the mode scenario 400 of FIG. 4A. In FIG. 4B, the relays 330, 360 are on and the relays 340, 350 are off to allow the power supply 210 to provide a positive DC volage to the electrode 130A and the power supply 220 to provide a negative DC volage to the electrode 130B.

[0084] Additionally, in the mode scenario 420 of FIG. 4C, the relays 330, 340 are on and the relays 350, 360 are off to allow the power supply 210 to provide a positive DC volage to both electrodes 130A, 130B. Conversely, in FIG. 4D, the mode scenario 430. Conversely, in FIG. 4D, the mode scenario 430 has the same mode (a monopolar mode) but with a reverse polarity configuration as compared to the mode scenario 420 of FIG. 4C. Specifically, in FIG. 4D, the relays 330, 340 are off and the relays 350, 360 are on to allow the power supply 220 to provide a negative DC volage to both electrodes 130A, 130B.

[0085] With continued reference to FIG. 3, the controller 166 may control the power supplies 210, 220 to output a regulated DC voltage. In various embodiments, the controller 166 may generate and provide control signals 310, 312 to the power supplies 210, 220, respectively, for such control. For example, the controller 166 may receive a clamp voltage setpoint representing a desired voltage to clamp a substrate (e.g., the substrate 132 of FIG. 2) to a substrate support (e.g., the substrate support 120 of FIG. 2). Then, the controller 166 may generate the control signals 310, 312 based on the clamp voltage setpoint to control the power supplies 210, 220 to output a fixed DC voltage at the clamp voltage setpoint. In such examples, the clamp voltage setpoint may be determined based on the type of substrate being processed, parameters (e.g., dielectric thickness, bow, etc.) of the substrate being processed, etc. In some embodiments, the clamp voltage setpoint and adjustments thereof may be calibrated according to any suitable calibration process, such as a pop-off test where a substrate is tested to determine if it is sufficiently clamped at different voltages.Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA

[0086] As examples only, the clamp voltage setpoint may be set to 3.6KV or 6KV for a bipolar mode with a silicon substrate. In such examples, the clamp voltage setpoint may be split for control purposes. For example, the power supplies 210, 220 may be controlled to a provide a DC voltage equal to the clamp voltage setpoint divided by two. Specifically, in this example, the power supply 210 is controlled to a provide a DC voltage of +1 .8KV or +3KV and the power supply 220 is controlled to a provide a DC voltage of -1 .8KV or -3KV.

[0087] In other examples, the clamp voltage setpoint may be set to 6.5KV for a monopolar mode with a glass substrate having a thin dielectric and a medium amount of bow, or to 8KV for a monopolar mode with a glass substrate with a thick dielectric and a high amount of bow. In such examples, a maximum capability may be 10KV clamping for a monopolar mode. With this setup, the power supplies 210, 220 may be controlled to a provide a DC voltage equal to the clamp voltage setpoint. Specifically, in this example, the power supply 210 is controlled to a provide a DC voltage of +6.5KV, +8KV, or +10KV or the power supply 220 is controlled to a provide a DC voltage of - 6.5KV, -8KV, or -10KV.

[0088] In some examples, the controller 166 may control the power supplies 210, 220 to adjust their output voltage. For example, the clamp voltage setpoint may be adjustable based on, for example, plasma flow. In such examples, the clamp voltage setpoint may be adjusted to different values. As a result, the control signals 310, 312 may be altered based on the adjusted clamp voltage setpoint, thereby resulting in a different output voltage provided by the power supplies 210, 220.

[0089] In various examples, the controller 166 may also control the power supplies 210, 220 based on an offset biasing voltage. For example, the controller 166 may receive a bias compensation voltage setpoint representing a desired voltage compensation for an RF bias voltage being applied to a substrate support (e.g., the substrate support 120 of FIG. 2). Then, the controller 166 may generate the control signals 310, 312 based on the clamp voltage setpoint and the bias compensation voltage setpoint to control the power supplies 210, 220 to output a fixed (or adjustable) DC voltage.

[0090] For example, the bias compensation voltage setpoint may be -0.5KV, -1.2KV, or another suitable value depending on the amount of RF bias applied to the substrate support. When operating in the bipolar mode, the power supplies 210, 220 areAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA controlled to a provide a DC voltage equal determined according to equation (1 ) below. For example, if the bias compensation voltage setpoint is -0.5KV and the clamp voltage setpoint is 6KV, the power supply 210 is controlled to a provide a DC voltage of +2.5KV and the power supply 220 is controlled to a provide a DC voltage of -3.5KV. As another example, if the bias compensation voltage setpoint is -1.2KV and the clamp voltage setpoint is 3.6KV, the power supply 210 is controlled to a provide a DC voltage of +0.6KV and the power supply 220 is controlled to a provide a DC voltage of -3.0KV.Equation (1 )

[0091] If, however, a monopolar mode is employed, the power supplies 210, 220 are controlled to a provide a DC voltage equal determined according to equation (2) or equation (3) below. For example, if the bias compensation voltage setpoint is -0.5KV and the clamp voltage setpoint is 10KV, the power supply 210 is controlled to a provide a DC voltage of +9.5KV (according to equation (2) below) or the power supply 220 is controlled to a provide a DC voltage of -10.5KV (according to equation (3) below). As another example, if the bias compensation voltage setpoint is -1 .2KV and the clamp voltage setpoint is 8KV, the power supply 210 is controlled to a provide a DC voltage of +6.8KV (according to equation (2) below) or the power supply 220 is controlled to a provide a DC voltage of -9.2KV (according to equation (3) below).Equation (2) \ClampSetpoint\') + (— \BiasSetpoint\')Equation (3) \ClampSetpoint ) + (— BiasSetpoint)

[0092] Referring now to FIGS. 5A-B, examples of substrate supports having different substrates clamped thereon are shown. Specifically, in FIG. 5A, the substrate support 120 of FIG. 2 and a substrate 532A are shown. The substrate support 120 includes the ESC 126 and the electrodes 130A, 130B embedded therein, as explained herein. As shown, the substrate 532A includes regions 550A, 560A each having an opposite polarity as the aligned electrodes 130A, 130B. For example, an electric field of opposite polarity is induced in the regions 550A, 560A of the substrate 532A due to the charged electrodes 130A, 130B, respectively.

[0093] In FIG. 5B, the substrate support 120 of FIG. 2, a substrate 532B, and a glass layer 540 are shown. In this example, the substrate 532B and the glass layer 540 form a silicon on glass carrier configuration. While the example of FIG. 2 is shown asAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA including the glass layer 540, any other suitable dielectric may be employed if desired. The substrate support 120 includes the ESC 126 and the electrodes 130A, 130B embedded therein, as explained herein. As shown, the substrate 532B includes regions 550B, 560B each having an opposite polarity as the aligned electrodes 130A, 130B, as explained above.

[0094] Additionally, and as shown in FIG. 5B, the substrate 532B includes an identifier. Specifically, in the example of FIG. 5B, the substrate 532B includes a barcode 570. In such examples, a sensor (e.g., the sensor 139 of FIG. 1 ) may read the barcode 570 and a controller may identify the substrate 532B as a silicon on glass carrier substrate based on the feedback from the sensor. While the substrate 532B is shown as including a barcode, it should be appreciated that any other suitable identifier may be employed, such as a QR code, a numerical and / or an alphabetic code, etc. Additionally, while the substrate 532A is not shown as including an identifier, it should be appreciated that the substrate 532A may include the same type or a different type of identifier as the substrate 532B if desired. Further, in other embodiments, other components may additionally or alternatively include an identifier. For example, and as shown in FIG. 5B, the glass layer 540 may include an identifier, such as a barcode (shown in dashed lines) that is the same or different than the barcode 570.

[0095] In various embodiments, any one of the substrate processing systems herein may include one or more protection mechanisms to detect failures. For example, activation of specific combinations of the relays 330, 340, 350, 360 of FIG. 3 may result in short conditions and / or floating high voltage lines, which can be dangerous for hardware in the system. In some examples, these specific combinations of activated relays may be identified and / or prevented based on sensed feedback on each output, communication with the relays to ensure forbidden combinations are not created, state machine structures to ensure a return to safe mode of operation, and / or current limiting resistance in line to lower dangerous power levels (but higher than over current and fold back levels of each high voltage power supply). For example, and with respect to the relay configuration of FIG. 3, forbidden relay combinations may occur when, for example, only one of the relays 330, 340, 350, 360 is on, any combination of three of the relays 330, 340, 350, 360 are on, the relays 330, 350 are both on, or the relays 340, 360 are both on. In response to detecting such forbidden relay combinations (e.g., a failure), the controller 166 may disable (e.g., shutdown) the power supplies 210, 220.Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA

[0096] FIG. 6 depicts a portion of one example substrate processing system 600 including a protection mechanism to detect such failures. For example, and as shown in FIG. 6, the substrate processing system 600 includes the high voltage power supplies 210, 220 of FIGS. 2-3, the controller 166 of FIGS. 1 -3, a relay array 630, and sensors 670, 680.

[0097] The relay array 630 includes the relays 330, 340, 350, 360 of FIG. 3. In this example, the relays 330, 340, 350, 360 are connected in a similar manner as shown in FIG. 3. For example, and as shown, inputs of the relays 330, 340 are coupled to the power supply 210, inputs of the relays 350, 360 are coupled to the power supply 220, outputs of the relays 330, 350 are coupled together at a connection point (and to the electrode 320A), and outputs of the relays 340, 360 are coupled together at another connection point (and to the electrode 320B).

[0098] In various embodiments, the sensors 670, 680 sense electrical parameters on output sides of the relays 330, 340, 350, 360. For example, the sensors 670, 680 may be voltage sensors for sensing voltages on the output side of the relay connection points, as shown in FIG. 6. Specifically, the sensor 670 senses a voltage on the output side of the connection point for the relays 330, 350, and the sensor 680 senses a voltage on the output side of the connection point for the relays 340, 360. In other examples, one or both sensors 670, 680 may be another suitable sensor, such as a current sensor, etc. for sensing electrical parameters.

[0099] In the example of FIG. 6, the controller 166 can detect a failure related to a forbidden relay combination based on feedback from the sensors 670, 680. For example, the controller 166 receives sensed feedback (e.g., voltages) from the sensors 670, 680. Based on the received sensed feedback, the controller 166 can determine whether a specific combination of relays is activated. For instance, the controller 166 may compare the sensed voltage from each sensor 670, 680 to one or more thresholds (e.g., setpoints, expected values, etc.). Then, based on the comparisons of the sensed voltages and threshold(s), the controller 166 can detect a failure. Then, in response to detecting the failure, the controller 166 can disable the power supplies 210, 220 via, for example, the control signals 310, 312 of FIG. 3.

[0100] In other examples, the controller 166 can implement an automatic health check for the relay array 630 including the relays 330, 340, 350, 360. For example, when employing the four relays 330, 340, 350, 360 each being on or off (e.g., conducting orAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA not conducting), there is a possibility of sixteen different relay combinations for the relays 330, 340, 350, 360. In such examples, four of the combinations are acceptable while the other twelve combinations are forbidden, as explained above. When a particular mode (e.g., bipolar mode or a monopolar mode) and a polarity are selected via, for example, the mode selection signal 240 and the polarity signal 250, the controller 166 can determine thresholds for the selected mode and polarity for an automatic health check.

[0101] For example, the controller 166 may select expected voltages for the output sides of the relays 330, 340, 350, 360 based on the selected mode and polarity. In this example, the selected voltages function as thresholds. In various embodiments, the controller 166 may utilize a lookup table to select stored voltage values corresponding to the selected mode and polarity. Then, the controller 166 receives the sensed feedback (e.g., voltages) from the sensors 670, 680 and compares the feedback with the selected thresholds. If a difference between the selected thresholds and the feedback is detected, the controller 166 may identify a failure with the relay array 630 and / or one of the relays 330, 340, 350, 360, and in some cases disable the relay array 630. This automatic health check sequence can be repeated as desired. For example, if a new mode (e.g., bipolar mode or monopolar mode) is selected and / or a new polarity is selected, the controller 166 can select new thresholds from the lookup table and compare the feedback from the sensors 670, 680 with the new thresholds.

[0102] FIG. 7 depicts another example substrate processing system 700 utilizing the clamping mode selection and the polarity selection according to the present disclosure. As shown in FIG. 7, the substrate processing system 700 generally includes a voltage conditioning module 702, a compensation setpoint module 704, a feedback module 706, a relay control module 708, a power supply module 710, a mode switching module 712, and a delivery and filtering module 730. In the example of FIG. 7, the voltage conditioning module 702, the compensation setpoint module 704, the feedback module 706, and the relay control module 708 may be modules in the controller 166 of FIGS, of FIGS. 1 -3 and / or in communication with the controller 166. Additionally, the power supply module 710 includes two high voltage DC power supplies (e.g., the power supplies 210, 220 of FIGS. 2-3) and an RF bias power supply (e.g., the RF bias source 146 of FIG. 1 ). Further, the mode switching module 712 includes multiple switching devices, such as relays, etc. as explained herein.Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA

[0103] In FIG. 7, the voltage conditioning module 702 receives one or more setpoints 760. For example, the voltage conditioning module 702 may receive a clamp voltage setpoint and a bias compensation voltage setpoint, as explained herein. The received setpoints 760 are then passed to the compensation setpoint module 704, where the module 704 determines control setpoint value(s) for the power supplies in the power supply module 710.

[0104] For example, and as shown in FIG. 7, the compensation setpoint module 704 receives the mode selection signal 240 and the polarity signal 250, as explained above. Based on the selected mode (e.g., bipolar mode or monopolar mode) and polarity, the compensation setpoint module 704 may determine setpoint value(s) for the specific mode and polarity. In such examples, the control setpoint value(s) may be determined according to, for example, one of the equations (1)-(3) above. In this example, the compensation setpoint module 704 may generate control signals (e.g., the control signals 310, 312 of FIG. 3) for the power supplies based on the control setpoint value(s).

[0105] As shown, the relay control module 708 receives the mode selection signal 240 and the polarity signal 250, as explained above. Based on the received signals 240, 250, the relay control module 708 generates control signals (e.g., the control signals 314, 316, 318, 320 of FIG. 3) for the switching devices (e.g., the relays 330, 340, 350, 360 of FIG. 3) in the mode switching module 712. In various embodiments, the compensation setpoint module 704 may also receive the mode selection signal 240 and the polarity signal 250 for use in determining the control setpoint value(s).

[0106] The delivery and filtering module 730 of FIG. 7 receives power from the power supply module 710. Specifically, the delivery and filtering module 730 receives positive and / or negative DC voltages from the power supply module 710 via the mode switching module 712. The positive and / or negative DC voltages are then passed via one or more filtering components to the electrodes 320A, 320B in the ESC 126. Additionally, the delivery and filtering module 730 receives an RF bias voltage from the power supply module 710. The RF bias voltage is then passed to the substrate support 120 (e.g., the baseplate 122 of the substrate support 120) via one or more filtering components in the delivery and filtering module 730.

[0107] The feedback module 706 senses electrical parameters on output sides of the switching devices in the mode switching module 712. For example, the feedbackAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA module 706 may include sensors (e.g., the sensors 670, 680 of FIG. 6) for sensing voltages on output sides of connection points associated with pairs of the switching devices, as explained herein. The sensed voltages may then be used to detect a failure relating to a forbidden switch combination as explained above.

[0108] For example, in FIG. 7, feedback from the feedback module 706 may be used to determine whether a mode change may be initiated. For instance, in FIG. 7, the voltage conditioning module 702 receives the feedback from the feedback module 706 and determines whether a mode change may proceed. As one example, the voltage conditioning module 702 may compare voltages (feedback) on the output side of the relays and a threshold. If the voltages are less than the threshold (e.g., the voltages are low), the voltage conditioning module 702 may allow the mode change to occur. If, however, the voltages are greater than the threshold (e.g., the voltages are high), the voltage conditioning module 702 may send a signal to the compensation setpoint module 704 to prevent the mode change. In such examples, switching the relays at a high voltage may cause damage to the relays. In various embodiments, the relay control module 708 may function in a similar manner based on the feedback from the feedback module 706 to prevent a mode change at a high voltage.

[0109] Referring now to FIGS. 8-10, example methods 800, 900, 1000 for selecting a clamping mode and polarity in a substrate processing system are depicted. While FIGS. 8-10 are shown and described as including specific steps, it should be appreciated that the methods 800, 900, 1000 are example variations that may be implemented and in other embodiments, the methods 800, 900, 1000 and / or other example methods may include different steps, more or less steps, etc. Additionally, although the methods 800, 900, 1000 are described in relation to the systems 100, 200, 600 of FIGS. 1 -2 and 6, any one of the methods 800, 900, 1000 may be employable by any suitable system.

[0110] As shown in FIG. 8, the method 800 begins at 802, where a substrate is arranged on a substrate support in a processing chamber in any suitable manner. Then, a mode selection signal (e.g., the mode selection signal 240) and a polarity selection signal (e.g., the polarity signal 250) are received at 804, 806, respectively. The method 800 then proceeds to 808.

[0111] At 808, the method 800 (e.g., the controller 166) determines whether a selected mode is a bipolar mode or a monopolar mode based on the received mode selection signal. If the selected mode is a bipolar mode, the method 800 proceeds to 810 whereAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA the controller 166 controls switching devices between clamping electrodes (e.g., the electrodes 320A, 320B) and DC power supplies (e.g., the power supplies 210, 220) in a bipolar mode with the selected polarity from the polarity selection signal. Otherwise, if the selected mode is not a bipolar mode (e.g., is a monopolar mode), the method 800 proceeds to 812 where the controller 166 controls the switching devices in a monopolar mode with the selected polarity from the polarity selection signal. The method 800 then proceeds to 814.

[0112] At 814, plasma processing (e.g., a plasma etch step) is performed on the substrate by, for example, providing desired voltage(s) to the clamping electrodes to clamp the substrate to the ESC, as explained herein. Then, at 816, the method 800 (e.g., the controller 166) determines whether another polarity selection signal is received. For example, the controller 166 may receive a reverse polarity selection signal indicating a desire to reverse the polarity or polarity configuration associated with the clamping electrodes. If so, the method 800 proceeds to 818 where the controller 166 controls the switching devices to enable one or both DC power supplies to provide the reversed polarity or polarity configuration for the clamping electrodes. The method then proceeds to 820. If not at 816, the method proceeds to 820.

[0113] At 820, the method 800 (e.g., the controller 166) determines whether the plasma processing is complete. If so, the method 800 ends as shown in FIG. 8. If not, the method 800 returns to 814.

[0114] In FIG. 9, the method 900 is substantially similar to the method 800 of FIG. 8 but includes different steps for receiving a mode selection signal. For example, the method 900 begins at 802 of FIG. 8. Then, the method 900 (e.g., the controller 166) receives a sensed substrate parameter at 904, which functions as a mode selection signal. For example, a sensor (e.g., the sensor 139) may sense or otherwise detect a parameter associated with the substrate as the substrate is delivered and arranged on the substrate support. The parameter may include an identifier, such as a barcode, a QR code, etc. that specifies a type of the substrate (e.g., conductive substrate, dielectric substrate, silicon on glass carrier substrate, etc.). The method 900 then proceeds to 906.

[0115] At 906, the method 900 (e.g., the controller 166) selects a clamping mode based on the received substrate parameter. For example, if the substrate parameter indicates the substrate is a conductive substrate, the controller 166 may select a bipolarAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA mode as the clamping mode. If, however, the substrate parameter indicates the substrate is a dielectric substrate, the controller 166 may select a monopolar mode as the clamping mode. The method 900 then proceeds to steps 808, 810, 812, 814, 816, 818, 820 explained above relative to the method 800 of FIG. 8.

[0116] As shown in FIG. 10, the method 1000 begins at 804, 806 of FIG. 8, where a mode selection signal and a polarity selection signal are received, respectively. The method 1000 then proceeds to 1008. At 1008, the method 1000 (e.g., the controller 166) controls switching devices between clamping electrodes (e.g., the electrodes 320A, 320B) and DC power supplies (e.g., the power supplies 210, 220) based on the received mode selection signal and polarity selection signal. For example, and as explained above, the switching devices may be controlled in a bipolar mode or a monopolar mode with a selected polarity from the polarity selection signal. The method 1000 then proceeds to 814 of FIG. 8, where plasma processing is performed on the substrate by, for example, providing desired voltage(s) to the clamping electrodes to clamp the substrate to the ESC, as explained herein. The method 1000 then proceeds to 1010.

[0117] At 1010, the method 1000 sense parameters associated with the clamping electrodes. For example, and as explained above, sensors (e.g., the sensors 670, 680) may sense voltages on the output side of the switching devices. The controller 166 may receive the sensed voltage from the sensors. Then, the method 1000 proceeds to 1012.

[0118] At 1012, the method 1000 (e.g., the controller 166) determines whether a failure is detected relating to the control of the switching devices. For example, and as explained above, the controller 166 may determine that a forbidden combination of activated switching devices is employed based on the sensed parameters. If no at 1012, the method 1000 proceeds to 1014. If yes at 1012, the method 1000 proceeds to 1016, where the method 1000 (e.g., the controller 166) disables the power supplies. The method 1000 then ends as shown in FIG. 10.

[0119] At 1014, the method 1000 (e.g., the controller 166) determines whether the plasma processing is complete. If so, the method 1000 ends as shown in FIG. 10. If not, the method 1000 returns to 814.

[0120] The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosureAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims. It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Further, although each of the embodiments is described above as having certain features, any one or more of those features described with respect to any embodiment of the disclosure can be implemented in and / or combined with features of any of the other embodiments, even if that combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with one another remain within the scope of this disclosure.

[0121] Spatial and functional relationships between elements (for example, between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “disposed.” Unless explicitly described as being “direct,” when a relationship between first and second elements is described in the above disclosure, that relationship can be a direct relationship where no other intervening elements are present between the first and second elements, but can also be an indirect relationship where one or more intervening elements are present (either spatially or functionally) between the first and second elements. As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.”

[0122] In some implementations, a controller is part of a system, which may be part of the above-described examples. Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and / or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuumAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0123] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, non-transitory memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0124] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g. a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type ofAttorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA process to be performed and the type of tool that the controller is configured to interface with or control. Thus as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0125] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0126] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POACLAIMSWhat is claimed is:1 . A system comprising: a substrate support positioned within a substrate processing chamber, the substrate support including electrodes having at least a first electrode and a second electrode configured to clamp a substrate to the substrate support; first and second power supplies, the first power supply configured to output a positive voltage and the second power supply configured to output a negative voltage; switching devices coupled between the electrodes and the first and second power supplies; and a controller in communication with the switching devices, the controller configured to: receive a mode selection signal; and in response to the mode selection signal, control the switching devices in a bipolar mode to enable the first power supply to output the positive voltage to the first electrode and the second power supply to output the negative voltage to the second electrode, or in a monopolar mode to enable one of the first power supply or the second power supply to output the positive voltage or the negative voltage to the first electrode and the second electrode.

2. The system of claim 1 , wherein the controller is configured to: receive a polarity signal; and in response to the polarity signal, control the switching devices in the bipolar mode to enable the first power supply to output the positive voltage to the second electrode and the second power supply to output the negative voltage to the first electrode, or in the monopolar mode to enable the other one of the first power supply or the second power supply to output the positive voltage or the negative voltage to the first electrode and the second electrode.

3. The system of claim 2, wherein the controller is configured to control the switching devices in response to the polarity signal when the substrate is clamped to substrate support.Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA4. The system of claim 1 , wherein the switching devices include a plurality of relays.

5. The system of claim 4, wherein the plurality of relays includes four relays.

6. The system of claim 5, wherein the four relays are normally open.

7. The system of claim 4, wherein the plurality of relays include: a first relay and a second relay coupled to the first power supply; and a third relay and a fourth relay coupled to the second power supply.

8. The system of claim 7, wherein: the first relay is coupled between the first power supply and the first electrode; the second relay is coupled between the first power supply and the second electrode; the third relay is coupled between the second power supply and the first electrode; and the fourth relay is coupled between the second power supply and the second electrode.

9. The system of claim 8, wherein: the first relay and the third relay are coupled together at a first connection point; the second relay and the fourth relay are coupled together at a second connection point; and the controller is configured to sense electrical parameters on output sides of the first connection point and the second connection point, detect a failure based on the sensed parameters, and disable the first and second power supplies in response to the detected failure.

10. The system of claim 1 , wherein the controller is configured to receive the mode selection signal based on user input.11 . The system of claim 1 , wherein the controller is configured to receive the mode selection signal based on a sensed parameter associated with the substrate.Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA12. The system of claim 11 , wherein the sensed parameter associated with the substrate is an identifier on the substrate.

13. The system of claim 1 , wherein the controller is configured to: receive a clamp voltage setpoint; and control the first power supply and the second power supply based on the received clamp voltage setpoint when the switching devices are controlled in the bipolar mode.

14. The system of claim 13, wherein the controller is configured to: receive a bias compensation voltage setpoint; and control the first power supply and the second power supply based on the received clamp voltage setpoint and the received bias compensation voltage setpoint when the switching devices are controlled in the bipolar mode.

15. The system of claim 1 , wherein the controller is configured to: receive a clamp voltage setpoint; and control one of the first power supply or the second power supply based on the received clamp voltage setpoint when the switching devices are controlled in the monopolar mode.

16. The system of claim 15, wherein the controller is configured to: receive a bias compensation voltage setpoint; and control one of the first power supply or the second power supply based on the received clamp voltage setpoint and the received bias compensation voltage setpoint when the switching devices are controlled in the monopolar mode.

17. The system of claim 1 , wherein: the switching devices include an input side coupled to the first and second power supplies and an output side coupled to the electrodes; and the controller is configured to sense at least one electrical parameter on the output side of the switching devices, detect a failure based on the sensed electrical parameter, and disable the first and second power supplies in response to the detected failure.Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA18. A method for enabling mode switching between a bipolar mode and a monopolar mode, the method comprising: receiving a substrate on a substrate support positioned within a substrate processing chamber, the substrate support including electrodes having at least a first electrode and a second electrode; receiving a mode selection signal; and in response to the mode selection signal, controlling switching devices coupled between the electrodes and first and second power supplies in a bipolar mode to enable the first power supply to output a positive voltage to the first electrode and the second power supply to output a negative voltage to the second electrode, or in a monopolar mode to enable one of the first power supply or the second power supply to output the positive voltage or the negative voltage to the first electrode and the second electrode.

19. The method of claim 18, further comprising: receiving a polarity signal; and in response to the polarity signal, controlling the switching devices in the bipolar mode to enable the first power supply to output the positive voltage to the second electrode and the second power supply to output the negative voltage to the first electrode, or in the monopolar mode to enable the other one of the first power supply or the second power supply to output the positive voltage or the negative voltage to the first electrode and the second electrode.

20. The method of claim 18, wherein the switching devices include a plurality of relays.

21. The method of claim 20, wherein the plurality of relays includes four normally open relays.

22. The method of claim 20, wherein the plurality of relays include: a first relay and a second relay coupled to the first power supply; and a third relay and a fourth relay coupled to the second power supply.Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA23. The method of claim 22, wherein: the first relay is coupled between the first power supply and the first electrode; the second relay is coupled between the first power supply and the second electrode; the third relay is coupled between the second power supply and the first electrode; and the fourth relay is coupled between the second power supply and the second electrode.

24. The method of claim 23, wherein: the first relay and the third relay are coupled together at a first connection point; the second relay and the fourth relay are coupled together at a second connection point; and the method further comprises sensing electrical parameters on output sides of the first connection point and the second connection point, detecting a failure based on the sensed parameters, and disabling the first and second power supplies in response to the detected failure.

25. The method of claim 18, wherein receiving the mode selection signal includes receiving the mode selection signal based on user input.

26. The method of claim 18, wherein receiving the mode selection signal includes receiving the mode selection signal based on a sensed parameter associated with the substrate.

27. The method of claim 26, wherein the sensed parameter associated with the substrate is an identifier on the substrate.

28. The method of claim 18, further comprising: receiving a clamp voltage setpoint; and controlling the first power supply and the second power supply based on the received clamp voltage setpoint when the switching devices are controlled in the bipolar mode.Attorney Docket No. 11739-1 WOHDP Ref. No. 15545-001284-WO-POA29. The method of claim 28, further comprising: receiving a bias compensation voltage setpoint; and controlling the first power supply and the second power supply based on the received clamp voltage setpoint and the received bias compensation voltage setpoint when the switching devices are controlled in the bipolar mode.

30. The method of claim 18, further comprising: receiving a clamp voltage setpoint; and controlling one of the first power supply and the second power supply based on the received clamp voltage setpoint when the switching devices are controlled in the monopolar mode.31 . The method of claim 30, further comprising: receiving a bias compensation voltage setpoint; and controlling one of the first power supply and the second power supply based on the received clamp voltage setpoint and the received bias compensation voltage setpoint when the switching devices are controlled in the monopolar mode.

32. The method of claim 18, wherein: the switching devices include an input side coupled to the first and second power supplies and an output side coupled to the electrodes; and the method further comprises sensing at least one electrical parameter on the output side of the switching devices, detecting a failure based on the sensed electrical parameter, and disabling the first and second power supplies in response to the detected failure.

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