Solar cell and manufacturing method therefor, electric device, and power generation device

Abstract

A solar cell and a manufacturing method therefor, an electric device, and a power generation device. The solar cell at least comprises a first electrode layer (11), a light absorption layer (30), and a second electrode (13), the light absorption layer (30) comprises a perovskite material, the first electrode layer (11) comprises a main body layer (111) and a modification layer (112), the modification layer (112) is located between the main body layer (111) and the light absorption layer (30), the main body layer (111) comprises a metal, the modification layer (112) is conductive, and the modification layer (112) comprises one or more of a metal nitride and a metal sulfide. The modification layer (112) in the first electrode layer (11) is not only conductive but also blocks diffusion of metal ions from the main body layer (111) toward the light absorption layer (30), thereby reducing corrosion of the perovskite material in the light absorption layer (30) by the metal ions, protecting the perovskite material, and reducing degradation of the perovskite material. The interfacial bonding between the modification layer (112) and the main body layer (111) is strong, thereby improving the reliability of the first electrode layer (11) in a solar cell device.

Description

Solar cell, preparation method thereof, power utilization device and power generation device

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Chinese Patent Application No. 202411172132.2, filed on August 23, 2024, entitled “Solar cell, preparation method thereof, power utilization device and power generation device”, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0003] The present application relates to the field of new energy technology, in particular to a solar cell, a preparation method thereof, a power utilization device and a power generation device. BACKGROUND

[0004] As an important technology in the field of new energy technology, solar cells have entered many fields such as industry, commerce, agriculture, communication, household appliances and public facilities from the military field and the aerospace field. Perovskite solar cells are one of the most promising and potential solar cells at present, which have the characteristics of high efficiency, environmental protection and low cost. Metal substrates have good electrical conductivity and bending mechanical properties at high temperature, so they are widely used in metal electrodes in perovskite solar cells.

[0005] However, in perovskite solar cells, metal ions of the metal electrode will diffuse to the perovskite light absorption layer, causing degradation of the perovskite. The above statements are only used to provide background technology information related to the present application, and do not necessarily constitute the prior art. SUMMARY

[0006] The technical problem solved by the present application is to provide a solar cell, a preparation method thereof, a power utilization device and a power generation device, which can hinder the diffusion of metal ions to the light absorption layer, protect the perovskite material and reduce the degradation of the perovskite material.

[0007] To solve the above technical problems, one technical solution adopted by the present application is to provide a solar cell, which at least includes a first electrode layer, a light absorption layer and a second electrode. The light absorption layer includes a perovskite material. The first electrode layer includes a main body layer and a modification layer. The modification layer is located between the main body layer and the light absorption layer. The main body layer includes a metal. The modification layer has electrical conductivity. The modification layer includes one or more of nitrides and sulfides of the metal.

[0008] The main body layer in the first electrode layer comprises a metal, which has good conductivity and bending resistance mechanical property. Meanwhile, the modification layer comprises one or more of nitride and sulfide of the metal in the main body layer, which not only has conductivity, but also can hinder the diffusion of metal ions in the main body layer to the light absorbing layer, thereby reducing the corrosion of the metal ions to the perovskite material in the light absorbing layer, playing a role of protecting the perovskite material, reducing the degradation of the perovskite material, and improving the stability and photoelectric conversion efficiency of the solar cell.

[0009] Further, the modification layer comprises nitride and sulfide of the metal in the main body layer, so that the interface between the modification layer and the main body layer has strong bonding effect, which can improve the reliability of the first electrode layer in the solar cell device.

[0010] In an embodiment, the metal comprises one or more of copper, molybdenum and titanium. The above-mentioned metal is used in the main body layer of the first electrode layer, has good charge receiving capacity, and can combine with non-metallic elements such as nitrogen and sulfur to form a modification layer, playing a role of protecting the perovskite material.

[0011] In an embodiment, the main body layer comprises copper, and the modification layer comprises copper nitride. The copper nitride not only has conductivity, but also can hinder the diffusion of copper ions, thereby reducing the corrosion of the perovskite material in the light absorbing layer, playing a role of protecting the perovskite material, and improving the stability of the solar cell.

[0012] In an embodiment, the thickness of the modification layer is 10nm-500nm. When the thickness of the modification layer is within the above range, the modification layer can be uniformly and continuously distributed on the surface of the main body layer, so that the modification layer can achieve good protection effect on the perovskite material, and meanwhile, the influence of the modification layer on resistance can be reduced.

[0013] In an embodiment, the thickness of the modification layer is 10nm-100nm. When the thickness of the modification layer is within the above range, the modification layer can be uniformly and continuously distributed on the surface of the main body layer, so that the modification layer can achieve good protection effect on the perovskite material, and meanwhile, the influence of the modification layer on resistance can be further reduced.

[0014] In an embodiment, the thickness of the main body layer is 3μm-100μm. When the thickness of the main body layer is within the above range, the main body layer has good charge receiving capacity, and is beneficial to improving the bending resistance mechanical property of the solar cell device.

[0015] In an embodiment, the thickness of the main body layer is 3μm-10μm. When the thickness of the main body layer is within the above range, the main body layer has good charge receiving capacity, and is beneficial to further improving the bending resistance mechanical property of the solar cell device.

[0016] In an embodiment, the sheet resistance of the first electrode layer is less than or equal to 1mΩ / m 2The sheet resistance of the first electrode layer is less than or equal to 1 mΩ / m 2 The sheet resistance of the first electrode layer is less than or equal to 1 mΩ / m

[0017] In an embodiment, the sheet resistance of the first electrode layer is 0.2 mΩ / m 2 ~ 0.5 mΩ / m 2 The sheet resistance of the first electrode layer is less than or equal to 1 mΩ / m 2 ~ 0.5 mΩ / m 2 The sheet resistance of the first electrode layer is less than or equal to 1 mΩ / m

[0018] In an embodiment, the work function of the modification layer is greater than the highest occupied molecular orbital energy level of the perovskite material, and the work function of the modification layer is less than the work function of the main layer. The work function of the modification layer is between the work function of the main layer and the highest occupied molecular orbital energy level of the perovskite material, which is conducive to the extraction and transport of holes in the transsolar cell device.

[0019] In an embodiment, the solar cell further comprises a base layer, the base layer is disposed on the side of the main layer away from the modification layer, and the base layer comprises a bend-resistant polymer. The base layer can improve the bend resistance of the solar cell device to obtain a flexible solar cell device.

[0020] In an embodiment, the bend-resistant polymer comprises one or more of polyethylene terephthalate, polynaphthalene dimethylene vinyl, polyimide, and polydimethylsiloxane. The above-mentioned bend-resistant polymer is used as the base layer of the solar cell, which can improve the bend resistance of the solar cell device to obtain a flexible solar cell device.

[0021] To solve the above technical problems, another technical solution adopted by the present application is to provide a preparation method of a solar cell, comprising: providing a substrate, preparing a main layer of a first electrode layer on the substrate to obtain a semi-finished product, the main layer comprising a metal; generating a modification layer of the first electrode layer in situ on the surface of the main layer of the semi-finished product, the modification layer having conductivity, the modification layer comprising one or more of a nitride and a sulfide of the metal; preparing a light absorption layer on the surface of the modification layer, the light absorption layer comprising a perovskite material; and preparing a second electrode on the surface of the light absorption layer.

[0022] The main body layer in the first electrode layer comprises a metal, which has good electrical conductivity and bending resistance mechanical property. Meanwhile, the modification layer comprises one or more of nitride and sulfide of the metal in the main body layer, which not only has electrical conductivity, but also can hinder the diffusion of metal ions in the main body layer to the light absorbing layer, thereby reducing the corrosion of metal ions to the perovskite material in the light absorbing layer, playing a role of protecting the perovskite material, reducing the degradation of the perovskite material, and improving the stability and photoelectric conversion efficiency of the solar cell.

[0023] Further, the modification layer comprises nitride and sulfide of the metal in the main body layer, so that the interface between the modification layer and the main body layer has strong bonding effect, which can improve the reliability of the first electrode layer in the solar cell device.

[0024] In an embodiment, the metal comprises one or more of copper, molybdenum and titanium. The above-mentioned metal is used in the main body layer of the first electrode layer, has good charge receiving capacity, and can combine with non-metallic elements such as nitrogen and sulfur to form a modification layer, playing a role of protecting the perovskite material.

[0025] In an embodiment, the in-situ generation of the modification layer of the first electrode layer on the surface of the semi-finished main body layer comprises: adjusting a reaction atmosphere, the reaction atmosphere comprising nitrogen, magnetron sputtering the metal of the main body layer on the surface of the semi-finished main body layer to form the modification layer of the first electrode layer; or putting sulfur powder and anhydrous ethanol into a reaction kettle, putting the semi-finished product into the reaction kettle, and forming the modification layer of the first electrode on the surface of the semi-finished main body layer by a hydrothermal method, the temperature of the hydrothermal method being 60-90℃, and the time being 3-9h. The in-situ generation method is helpful to form a continuous and less-defect interface, and is conducive to further improving the interface bonding effect of the main body layer and the modification layer.

[0026] The application also provides a power consuming device comprising the solar cell of any of the above-mentioned embodiments and / or the solar cell prepared by the preparation method of any of the above-mentioned embodiments. The power consuming device has at least the same advantages as the solar cell.

[0027] The application also provides a power generating device comprising the solar cell of any of the above-mentioned embodiments and / or the solar cell prepared by the preparation method of any of the above-mentioned embodiments. The power generating device has at least the same advantages as the solar cell.

[0028] The above description is only a summary of the technical solutions of the application. In order to more clearly understand the technical means of the application, the specific embodiments of the application can be implemented according to the content of the description, and in order to make the above and other purposes, characteristics and advantages of the application more obvious and easy to understand, the following specific embodiments of the application are described. BRIEF DESCRIPTION OF DRAWINGS

[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained without creative effort based on these drawings.

[0030] Fig. 1 is a structural schematic diagram of a solar cell according to one or more embodiments;

[0031] Fig. 2 is a structural schematic diagram of an electrical equipment according to some embodiments of the present application;

[0032] Fig. 3 is a structural schematic diagram of a power generation equipment according to some embodiments of the present application;

[0033] Fig. 4 is an aging comparison diagram of perovskite thin film under different first electrode layer structures according to some embodiments of the present application.

[0034] In the drawings: 100, solar cell; 11, first electrode; 111, main body layer; 112, modification layer; 13, second electrode; 21, hole transport layer; 23, electron transport layer; 30, light absorption layer; 1000, electrical equipment; 2000, power generation equipment. DETAILED DESCRIPTION

[0035] The embodiments of the technical solutions of the present application will be described in detail below with reference to the drawings. The following embodiments are only used to more clearly illustrate the technical solutions of the present application, and therefore only serve as examples, and cannot limit the protection scope of the present application.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs; the terms used herein are only for the purpose of describing specific embodiments of the present application, and are not intended to limit the present application; the terms "include" and "have" and any variations thereof in the specification and claims of the present application and the above description of drawings are intended to cover non-exclusive inclusion.

[0037] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly specified.

[0038] Reference to an“embodiment” herein means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase that the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are they necessarily mutually exclusive of other embodiments. It is expressly understood that the embodiments described herein are merely example embodiments of the application and that substantive changes can be made thereto without departing from the intended application.

[0039] In the description of the embodiments of the application, the term“and / or” only means an association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which can mean that A exists alone, A and B exist together, and B exists alone. In addition, the character“ / ” herein generally means that the front and rear associated objects have an“or” relationship.

[0040] In the description of the embodiments of the application, the term“a plurality of” refers to two or more (including two), and similarly, “a plurality of groups” refers to two or more groups (including two groups), and “a plurality of pieces” refers to two or more pieces (including two pieces).

[0041] Perovskite solar cells have become a research hotspot and have a wide prospect due to their high photoelectric conversion efficiency, low cost, and simple production. Perovskite solar cells can be applied to lunar rovers, satellite sails, various sensors, detectors, wearable electronic products, automobile power supply, and other civilian products. Perovskite solar cells have become power sources for consumer products in many aspects. With the continuous expansion of the application field of perovskite solar cells and the flexibility of perovskite solar cells, the market demand is also increasing.

[0042] In perovskite solar cells, metal substrates have good conductivity and bending resistance, and are therefore widely used as metal electrodes in perovskite solar cells. However, metal ions in the metal electrode can migrate to the perovskite light absorption layer, and even react with the perovskite material. This process causes corrosion and performance degradation of the perovskite material by destroying the chemical stability and electronic structure of the perovskite layer.

[0043] Currently, a transparent metal oxide such as indium tin oxide (ITO) or indium-doped zinc oxide (IZO) is introduced as a barrier layer between the metal electrode and the perovskite light absorption layer to hinder the diffusion of metal ions. However, this strategy is costly, and it is difficult for ITO (or IZO, etc.) to adhere firmly to the metal electrode. For flexible solar cell devices, there is a risk of separation and peeling of the ITO (or IZO, etc.) film layer during use in a bending scenario.

[0044] Based on the above problems, the application provides a solar cell, which at least comprises a first electrode layer, a light absorption layer and a second electrode, the light absorption layer comprises a perovskite material, the first electrode layer comprises a main body layer and a modification layer, the modification layer is located between the main body layer and the light absorption layer, the main body layer comprises a metal, the modification layer has conductivity, and the modification layer comprises one or more of nitrides and sulfides of the metal.

[0045] The light absorption layer is used for absorbing light and directly converting light energy into electrical energy through photoelectric effect or photochemical effect. The light absorption layer comprises a perovskite material, which has a photoelectric conversion function, can absorb photons of sunlight to generate excitation, generate photoelectron-hole pairs in the excited valence band, and the binding energy of the electron-hole pairs is small, so that the electron-hole pairs are easily dissociated under the action of the built-in electric field, and then separated into free electrons and free holes, i.e. carriers.

[0046] The second electrode is a transparent conductive electrode, which has high conductivity and high visible light transmittance, and has the function of collecting charges. In some embodiments, the material of the second electrode is selected from one or more of transparent conductive oxide materials, including fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), and indium-doped zinc oxide (IZO).

[0047] The first electrode layer has the function of collecting free charges. In the above embodiments, the first electrode layer comprises a main body layer and a modification layer, the main body layer comprises a metal, and the metal is a good inorganic conductive material, which has good conductivity and bending resistance mechanical properties, and is therefore suitable for flexible solar cell devices.

[0048] The modification layer is located between the main body layer and the light absorption layer, which means that there can be no other functional layer between the modification layer and the light absorption layer, or there can be other functional layers.

[0049] In an embodiment, the modification layer is adjacent to the light absorption layer. In another embodiment, the modification layer further comprises at least one of a carrier transport layer and a passivation layer between the modification layer and the light absorption layer, wherein the carrier transport layer comprises a hole transport layer or an electron transport layer.

[0050] The modification layer comprises one or more of nitrides and sulfides of the metal material in the main body layer. The modification layer not only has good conductivity and can realize the function of charge transport, but also has good thermal stability and is not easy to thermally decompose, and can hinder the diffusion of metal ions, so the modification layer also has the function of a metal ion barrier layer, thereby reducing the corrosion of metal ions on the perovskite material in the light absorption layer, playing a protective role for the perovskite material, reducing the degradation of the perovskite material, and improving the stability and photoelectric conversion efficiency of the solar cell. At the same time, the modification layer also has a protective effect on the main body layer, which can improve the corrosion resistance of the first electrode layer itself.

[0051] Further, since the modification layer is a nitride or sulfide of the metal in the main layer, the main layer and the modification layer have natural chemical affinity, and the interface between them has low energy, so the interface is relatively stable, the interface bonding is strong, and the interface is not easy to separate or fall off when the solar cell device is bent, which can improve the reliability of the first electrode layer in the solar cell device, especially in the flexible solar cell device.

[0052] In an embodiment, the modification layer is generated in-situ on the surface of the main layer. The in-situ generation method is a material synthesis technology, the core concept of which is to generate the required substance or structure directly in the final use position or reaction system during a specific chemical reaction or synthesis process.

[0053] In an embodiment, the modification layer is generated in-situ on the surface of the main layer by magnetron sputtering.

[0054] In another embodiment, the modification layer is generated in-situ on the surface of the main layer by a hydrothermal method.

[0055] The in-situ generation method is simple in process and high in production efficiency, which is helpful to form a continuous and less defective interface and is conducive to further improving the interface bonding of the main layer and the modification layer.

[0056] In an embodiment, the metal includes one or more of copper (Cu), molybdenum (Mo), and titanium (Ti). The above-mentioned metal is used for the main layer of the first electrode layer, has good charge receiving capacity, and can combine with non-metallic elements such as nitrogen and sulfur to form a modification layer, thereby protecting the perovskite material.

[0057] In an embodiment, the main layer includes copper, and the modification layer includes copper nitride.

[0058] Copper is an excellent conductive material with high electrical conductivity, good chemical stability and thermal stability, and is not prone to corrosion, making it suitable as an electrode material. Copper nitride also has good electrical conductivity and can achieve charge transport function. A dense film of copper nitride is formed on the surface of copper, which can act as a physical barrier to hinder the diffusion of copper ions, thereby reducing the corrosion of the perovskite material in the light absorbing layer, protecting the perovskite material, reducing the degradation of the perovskite material, and improving the stability of the solar cell.

[0059] In an embodiment, the thickness of the modification layer is 10 nm to 500 nm. For example, it can be 10 nm, 30 nm, 50 nm, 80 nm, 100 nm, 120 nm, 200 nm, 300 nm, 350 nm, 400 nm, 500 nm, or a range between any two of the above values, such as 10 nm to 30 nm, 50 nm to 80 nm, 100 nm to 120 nm, 300 nm to 350 nm, 400 nm to 500 nm, etc.

[0060] When the thickness of the modification layer is less than 500 nm, the influence of the modification layer on the resistance can be reduced, so that the first electrode layer has a smaller resistance and a higher carrier transport efficiency, and the modification layer has a lower preparation cost. Meanwhile, when the thickness of the modification layer is greater than 10 nm, the modification layer can be uniformly and continuously distributed on the surface of the main body layer, thereby achieving a good protection effect on the perovskite material.

[0061] In an embodiment, the thickness of the modification layer is 10 nm to 100 nm. For example, it can be 10 nm, 30 nm, 50 nm, 55 nm, 73 nm, 80 nm, 90 nm, 96 nm, 100 nm, or a range between any two of the above values, such as 10 nm to 30 nm, 50 nm to 55 nm, 73 nm to 80 nm, 90 nm to 100 nm, etc.

[0062] When the thickness of the modification layer is within the above range, the modification layer can be uniformly and continuously distributed on the surface of the main body layer, so that the modification layer can achieve a good protection effect on the perovskite material, and the influence of the modification layer on the resistance can be further reduced.

[0063] In an embodiment, the thickness of the main body layer is 3 μm to 100 μm. For example, it can be 3 μm, 5 μm, 10 μm, 20 μm, 28 μm, 36 μm, 50 μm, 75 μm, 80 μm, 90 μm, 100 μm, or a range between any two of the above values, such as 3 μm to 10 μm, 20 μm to 28 μm, 36 μm to 50 μm, 75 μm to 80 μm, 90 μm to 100 μm, etc.

[0064] An increase in the thickness of the main body layer usually reduces its flexibility. A thicker main body layer is more likely to crack or break when subjected to bending or folding, thereby affecting the mechanical stability and service life of the first electrode layer, and further affecting the bending resistance of the solar cell device. When the thickness of the main body layer is within the above range, it has a good charge receiving capacity, and is conducive to improving the bending resistance of the flexible solar cell device.

[0065] In one embodiment, the thickness of the main layer is 3μm to 10μm. For example, it can be 3μm, 4μm, 4.5μm, 5μm, 6μm, 7μm, 8.6μm, 9.4μm, 10μm, etc., or a range composed of any two of the above parameters, such as 3μm to 4μm, 4.5μm to 6μm, 7μm to 8.6μm, 9.4μm to 10μm, etc.

[0066] The thickness of the main layer is within the above range, which has good charge receiving ability and is also conducive to further improving the bending mechanical properties of flexible solar cell devices.

[0067] In one embodiment, the sheet resistance of the first electrode layer is less than or equal to 1 mΩ / m 2 For example, it could be 0.2mΩ / m 2 0.3mΩ / m 2 0.35mΩ / m 2 0.5mΩ / m 2 0.7mΩ / m 2 0.85mΩ / m 2 1mΩ / m 2 etc., or a range consisting of any two of the above parameters, for example, 0.2mΩ / m 2 ~0.3mΩ / m 2 0.35mΩ / m 2 ~0.5mΩ / m 2 0.85mΩ / m 2 ~1mΩ / m 2 wait.

[0068] Sheet resistance is a parameter describing the resistive properties of a thin film or sheet material; it refers to the resistance per unit length and unit width on a film or sheet material of a specific length and width. Sheet resistance testing employs a four-probe method, where four probes are arranged in an orderly fashion and contact the sample surface. By applying voltage or current, the voltage or current drop across the material is measured, thereby calculating the resistivity and sheet resistance. Lower sheet resistance indicates higher charge transport efficiency in the electrode material. The existing barrier layers (ITO and IZO) used to impede the diffusion of metal ions, as described above, typically have a sheet resistance of 7 mΩ / m. 2 above.

[0069] Therefore, the sheet resistance of the first electrode layer is limited to less than or equal to 1 mΩ / m. 2 This can improve the conductivity of the first electrode layer and reduce the series resistance of the solar cell, which is beneficial to improving the photovoltaic performance of the solar cell.

[0070] In one embodiment, the sheet resistance of the first electrode layer is 0.2 mΩ / m 2 ~0.5mΩ / m 2For example, it can be 0.2 mΩ / m 2 , 0.25 mΩ / m 2 , 0.33 mΩ / m 2 , 0.38 mΩ / m 2 , 0.4 mΩ / m 2 , 0.45 mΩ / m 2 , 0.5 mΩ / m 2 , etc., or a range composed of any two of the above parameters, for example, it can be 0.2 mΩ / m 2 ~0.25 mΩ / m 2 , 0.33 mΩ / m 2 ~0.38 mΩ / m 2 , 0.4 mΩ / m 2 ~0.5 mΩ / m 2 , etc. At this time, the conductivity of the first electrode layer can be further improved and the series resistance of the solar cell can be reduced, which is beneficial to further improve the photovoltaic performance of the solar cell.

[0071] In an embodiment, the work function of the modification layer is greater than the highest occupied molecular orbital energy level of the perovskite material, and the work function of the modification layer is less than the work function of the main body layer.

[0072] The work function refers to the energy required to move an electron from the interior of the material to the surface of the material and finally into the vacuum, representing the energy consumption process, and therefore is represented by a positive value. The highest occupied molecular orbital energy level (HOMO energy level) is the highest energy occupied orbital in the molecule, which is a reference value relative to the vacuum level, and therefore is represented by a negative value. Due to the difference in representation form, when comparing the work function and the HOMO energy level, the work function also needs to be converted into a reference value relative to the vacuum level to be compared with the HOMO energy level. For example, when the work function is 4.6 eV, its reference value relative to the vacuum level is -4.6 eV. In a transsolar cell, when the HOMO energy level of the perovskite material is lower than the work function of the metal electrode, holes can be more easily injected from the perovskite layer to the metal electrode, forming effective hole extraction. Therefore, in the above embodiment, the work function of the modification layer is between the work function of the main body layer and the HOMO energy level of the perovskite material, and this energy level arrangement is beneficial to the extraction and transmission of holes in the transsolar cell device.

[0073] In an embodiment, the main body layer includes copper, the work function of copper ranges from 4.6 eV to 4.7 eV, the modification layer includes copper nitride, the work function of copper nitride ranges from 4.9 eV to 5.1 eV, and the highest occupied molecular orbital energy level (HOMO energy level) of the perovskite material ranges from -5.2 eV to -5.5 eV.

[0074] At this time, the work function of the copper nitride is between the work function of copper and the HOMO energy level of the perovskite material, and such energy level arrangement is beneficial to the extraction and transport of holes in the transsolar cell device.

[0075] In an embodiment, the solar cell further comprises a base layer disposed on a side of the bulk layer distal to the modification layer, the base layer comprising a bend-resistant polymer. The base layer can improve the bend-resistance of the solar cell device to obtain a flexible solar cell device.

[0076] Bend-resistance refers to the ability of a material to resist crack formation and propagation upon repeated folding or bending. The base layer of the solar cell comprises a bend-resistant polymer, and thus the base layer also has bend-resistance. The use of the base layer provides a carrier for the first electrode layer, which can further reduce the thickness of the bulk layer in the first electrode layer, thereby improving the bend-resistance of the solar cell device.

[0077] In an embodiment, the bend-resistant polymer comprises one or more of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), and polydimethylsiloxane (PDMS). The above-mentioned polymer materials all have good bend-resistance, and thus can improve the bend-resistance of the solar cell device to obtain a flexible solar cell device.

[0078] Referring to FIG. 1, which is a structural schematic diagram of a solar cell according to one or more embodiments. The solar cell 100 comprises a base layer (not shown), a first electrode layer 11, a hole transport layer 21, a light absorbing layer 30, an electron transport layer 23, and a second electrode 13, which are sequentially stacked; the first electrode layer 11 comprises a bulk layer 111 and a modification layer 112, and the light absorbing layer 30 comprises a perovskite material.

[0079] The base layer comprises a bend-resistant polymer, which can improve the bend-resistance of the solar cell device. In an embodiment, the bend-resistant polymer comprises one or more of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), and polydimethylsiloxane (PDMS). In some embodiments, the base layer can also not be provided.

[0080] The first electrode layer 11 has the function of collecting free charges. In the first electrode layer 11, the bulk layer 111 comprises a metal, which has good conductivity and bend-resistance; and the modification layer 112 comprises one or more of nitrides and sulfides of the metal material in the bulk layer. The modification layer 112 not only has conductivity, but also can protect the perovskite material and reduce the decay of the perovskite material. The thickness of the bulk layer 111 is 3 μm to 100 μm, and the thickness of the modification layer 112 is 10 nm to 500 nm.

[0081] The hole transport layer 21 serves to transport free holes to the corresponding electrode.

[0082] In some embodiments, the material of the hole transport layer 21 includes one or more of metal oxide-based materials, polymer-based materials, organic small molecule-based self-assembled molecule materials, and derivatives thereof and materials obtained by doping or passivation thereof. For example, but not limited to, metal oxide-based materials such as nickel oxide (NiO x2 , 1≤x2≤1.5), molybdenum oxide (MoO x3 , 2.5≤x3≤3), tungsten oxide (WO x4 , 2.5≤x4≥3); polymer-based materials such as poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT:PSS); organic small molecule-based self-assembled molecule materials such as carbazole or triphenylamine materials containing phosphoric acid or carboxylic acid groups, etc. The thickness of the hole transport layer 21 is 0.5 nm to 50 nm.

[0083] It should be noted that in some embodiments, the solar cell 100 can also not include the hole transport layer 21.

[0084] The electron transport layer 23 serves to efficiently transport free electrons generated by the light absorbing layer.

[0085] In some embodiments, the material of the electron transport layer 23 includes at least one of imide compounds, quinone compounds, fullerene and derivatives thereof, metal oxides, semiconductor material oxides, titanates, fluorides and derivatives thereof, and materials obtained by doping or passivation thereof. The imide compounds include at least one of perylene imide and derivatives thereof, naphthalene imide and derivatives thereof, phthalimide, succinimide, N-bromosuccinimide, glutarimide, or maleimide. The quinone compounds include at least one of benzoquinone, naphthoquinone, phenanthraquinone, or anthraquinone. The fullerene and derivatives thereof include at least one of [6,6]-phenyl C 61 (PC 61 BM), [6,6]-phenyl C 71 (PC 71 BM), fullerene C 60 (C 60 ), fullerene C 70 (C 70The metal element in the metal oxide includes at least one of magnesium (Mg), cadmium (Cd), zinc (Zn), indium (In), lead (Pb), tungsten (W), antimony (Sb), bismuth (Bi), mercury (Hg), titanium (Ti), silver (Ag), manganese (Mn), iron (Fe), vanadium (V), tin (Sn), zirconium (Zr), strontium (Sr), gallium (Ga), and chromium (Cr). The semiconductor material oxide includes silicon oxide. The titanate includes at least one of strontium titanate and calcium titanate. The fluoride includes at least one of lithium fluoride and calcium fluoride. The thickness of the electron transport layer 23 is 5 nm to 100 nm.

[0086] It should be noted that, in some embodiments, the solar cell 100 can also not include the electron transport layer 23.

[0087] The light absorption layer 30 is used to absorb light and directly convert light energy into electrical energy through a photoelectric effect or a photochemical effect. The light absorption layer 30 includes a light-absorbing material and has a photoelectric conversion function. The light-absorbing material absorbs photons of sunlight to generate excitation, and the excited electrons in the valence band generate a photoelectron-hole pair. The binding energy of the electron-hole pair is small, and it is easy to dissociate under the action of the built-in electric field, and then separate into free electrons and free holes, i.e., carriers.

[0088] In some embodiments, the material of the light absorption layer 30 includes a perovskite. The chemical composition of the perovskite includes any one of ABX3 or A2CDX6, where A is any one of an inorganic cation, an organic cation, or an organic-inorganic hybrid cation, and can be at least one of a methylammonium ion (CH3NH3 + , MA + ), a n-butylammonium ion (HC(NH2)2 + , FA + ), and a cesium ion (Cs + ); B is a divalent cation, and can be at least one of a lead ion (Pb 2+ ) and a tin ion (Sn 2+ ); C is a monovalent cation, and can be a silver ion (Ag + ); D is a trivalent cation, and can be at least one of a bismuth cation (Bi 3+ ), an antimony cation (Sb 3+ ), and an indium cation (In 3+ ); and X is a monovalent anion, such as a halide anion or a halide-like anion, and can be at least one of a chloride ion (Cl - ), a bromide ion (Br - ), and an iodide ion (I - ). The thickness of the light absorption layer is 200 nm to 1000 nm.

[0089] The second electrode 13 is a transparent conductive electrode with high conductivity and high visible light transmittance, and has the function of collecting electric charges. In some embodiments, the material of the second electrode 13 is selected from transparent conductive oxide materials, including any one or several of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), and indium-doped zinc oxide (IZO). The thickness of the second electrode is 10 nm to 1000 nm.

[0090] The application also provides a method for preparing a solar cell, comprising: providing a substrate, preparing a main layer of a first electrode layer on the substrate to obtain a semi-finished product, the main layer comprising a metal; generating a modification layer of the first electrode layer in situ on the surface of the main layer of the semi-finished product, the modification layer having conductivity, and the modification layer comprising one or several of nitrides and sulfides of the metal; preparing a light-absorbing layer on the surface of the modification layer, the light-absorbing layer comprising a perovskite material; and preparing a second electrode on the surface of the light-absorbing layer.

[0091] In an embodiment, the metal comprises one or several of copper, molybdenum, and titanium.

[0092] The preparation method of the main layer includes but is not limited to magnetron sputtering and physical vapor deposition. Magnetron sputtering refers to applying a magnetic field to a metal target in a vacuum, so that atoms or molecules on the surface of the target are sputtered out and form a main layer film on the substrate, and the thickness of the main layer can be controlled by controlling the reaction time of magnetron sputtering. The film prepared by this method has high purity, high uniformity and good adhesion, and is suitable for preparing metal electrodes of solar cells. Physical vapor deposition (PVD) directly deposits a thin film on the surface of a substrate by converting a material from a gaseous state to a solid state. PVD technology is beneficial to improving the purity, uniformity, adhesion and density of the thin film, and is suitable for the preparation of thin films of various materials, including metals, while the composition and thickness of the thin film can be accurately controlled.

[0093] In an embodiment, generating the modification layer of the first electrode layer in situ on the surface of the main layer of the semi-finished product comprises: adjusting a reaction atmosphere, the reaction atmosphere comprising nitrogen, and magnetron sputtering the metal of the main layer on the surface of the main layer of the semi-finished product to form the modification layer of the first electrode layer.

[0094] For example, taking the main layer as a copper foil and the modification layer as copper nitride, generating the modification layer of the first electrode layer in situ on the surface of the main layer comprises the following steps: after the sputtering base film of the prepared main layer copper foil is placed in the cabin, vacuumize to 1 × 10 -4Pa, pre-sputtering 5min with argon to clean the target surface, then fill nitrogen, control the total sputtering pressure at 2Pa, the ratio of nitrogen and argon is 2:1, the sputtering power is controlled at 80-120W. The sputtering target material is 99.999% high purity copper target, the distance between the target and the substrate is 10-20cm, the sputtering gas is high purity nitrogen and argon, which are controlled by mass flow meters respectively, the thickness of copper nitride film is controlled by reaction time, about 40min to obtain 50nm thick copper nitride film.

[0095] In another embodiment, the in-situ generation of the modification layer of the first electrode layer on the surface of the body layer comprises: placing sulfur powder and anhydrous ethanol in a reaction kettle, placing the semi-finished product in the reaction kettle, and forming a modification layer of the first electrode on the surface of the body layer of the semi-finished product by a hydrothermal method, the temperature of the hydrothermal method is 60-90℃, and the time is 3-9h. The temperature of the hydrothermal method can be 60℃, 70℃, 75℃, 80℃, 90℃, etc., or a range formed by any two of the above values, for example, it can be 60-70℃, 75-80℃, 75-90℃, etc.; the time can be 3h, 4h, 6h, 8h, 8.5h, 9h, etc., or a range formed by any two of the above values, for example, it can be 3-4h, 6-8h, 8.5-9h, etc.

[0096] For example, taking the body layer as a copper foil and the modification layer as copper sulfide, the in-situ generation of the modification layer of the first electrode layer on the surface of the body layer comprises the following steps: placing sulfur powder and anhydrous ethanol in a hydrothermal reaction kettle; placing the semi-finished product of the prepared body layer copper foil into the hydrothermal reaction kettle, keeping the temperature at 60-90℃, reacting for 3-9h, taking out, washing with anhydrous ethanol and deionized water, and drying to obtain a copper sulfide modification layer.

[0097] The modification layer is directly generated on the surface of the body layer, which helps to form a continuous and less defective interface, and is conducive to improving the interface combination of the body layer and the modification layer, and at the same time, the thickness of the modification layer can be controlled by the reaction time of the magnetron sputtering.

[0098] The preparation of the light absorption layer on the surface of the modification layer can adopt spin coating, blade coating, slot coating, vapor deposition, spraying, inkjet printing, soft overlay deposition, etc., to form a perovskite film on the substrate structure.

[0099] In an embodiment, the preparation of the light absorption layer further comprises a heat treatment process, which means placing the coated perovskite film on a high-temperature furnace or hot plate for heat treatment (also known as annealing), and the temperature is usually between 80-150℃. The heat treatment can promote the crystallization and growth of perovskite crystals, adjust the morphology of perovskite crystals, help to reduce defects and improve photoelectric conversion efficiency; it is also helpful to completely remove residual organic matter and solvent, and improve the purity of the film.

[0100] In an embodiment, the solar cell further comprises a hole transport layer and / or an electron transport layer; the hole transport layer is located between the first electrode layer and the light absorbing layer, and the electron transport layer is located between the second electrode and the light absorbing layer. The hole transport layer and the electron transport layer can extract and transport the holes and the electrons generated after the light absorbing layer is excited by photons to the corresponding electrode layer, respectively, thereby improving the carrier transport efficiency.

[0101] In the solar cell prepared by the above method, the main body layer in the first electrode layer comprises a metal, and has good electrical conductivity and bending-resistant mechanical properties. Meanwhile, the modification layer comprises at least one of a nitride and a sulfide of the metal in the main body layer, which not only has electrical conductivity and can realize the function of charge transport, but also has good thermal stability and is not prone to thermal decomposition, and can hinder the diffusion of metal ions, so that the modification layer also has the function of a metal ion blocking layer, thereby reducing the corrosion of metal ions on the perovskite material in the light absorbing layer, playing a role in protecting the perovskite material, reducing the degradation of the perovskite material, and improving the stability and photoelectric conversion efficiency of the solar cell. Meanwhile, the modification layer also has a protective effect on the main body layer, and can improve the corrosion resistance of the first electrode layer itself.

[0102] Further, since the modification layer is a nitride or a sulfide of the metal in the main body layer, the main body layer and the modification layer have natural chemical affinity, and the interface between them has low energy, so that the interface is relatively stable, and the interface has strong bonding. When the solar cell device is bent, the interface is not prone to separation or falling off, and the reliability of the first electrode layer in the solar cell device, especially in a flexible solar cell device, can be improved.

[0103] Referring to FIG. 2, the application also provides a power utilization device 1000 comprising the solar cell 100 or the solar cell prepared by the preparation method of the perovskite solar cell.

[0104] In the application, the solar cell serves as a power supply for the power utilization device 1000, or the solar cell can serve as an energy storage unit of the power utilization device 1000. As an example, the power utilization device 1000 can be a lighting element, a display element, or a car, etc.

[0105] Referring to FIG. 3, the application also provides a power generation device 2000 comprising the solar cell 100 or the perovskite solar cell prepared by the preparation method of the perovskite solar cell. The power generation device 2000 can be used for power generation.

[0106] The beneficial effects of the application are further illustrated in the following examples.

[0107] In order to make the technical problems, technical solutions and beneficial effects solved by the embodiments of the present application clearer, the following will be further described in detail in combination with the embodiments and drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and in no way limits the present application and its applications. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application.

[0108] I. Fabrication of perovskite solar cell device

[0109] Embodiment 1

[0110] (1) Preparation of the first electrode layer

[0111] In a vacuum environment, the surface of a 50μm thick PET polymer film substrate was subjected to plasma pretreatment to improve the surface quality of the substrate and the adhesion of the substrate to the metal coating. The plasma treatment atmosphere was a mixture of argon and oxygen at a volume ratio of 8:2, and the treatment time was 3min. Then a 10μm thick copper metal main layer was deposited on the surface of the PET substrate by physical vapor deposition (PVD) process for 5min;

[0112] Subsequently, the sputtered film with the prepared copper metal main layer was placed in a magnetron sputtering cabin, and vacuum was drawn to 1×10 -4 Pa, argon gas was filled for 5min for pre-sputtering to clean the target surface, then nitrogen gas was filled, the total sputtering gas pressure was controlled at 2Pa, the ratio of nitrogen and argon was 2:1, and the sputtering power was controlled at 100W. The sputtering target material was a 99.999% high-purity copper target, the distance between the target and the film was 15cm, the sputtering gas was high-purity nitrogen and argon, which were controlled by mass flow meters respectively, the thickness of the copper nitride modification layer was controlled by controlling the reaction time, and a 100nm thick copper nitride modification layer was obtained by sputtering for about 80min. The copper metal main layer and the copper nitride modification layer constitute the first electrode layer.

[0113] (2) Preparation of the NiO hole transport layer

[0114] In this embodiment, nickel oxide (NiO) was used as the hole transport layer material. Before the experiment, a water dispersion of nickel oxide nanoparticles with a concentration of 20mg / mL was prepared. Then the cleaned first electrode layer was subjected to ultraviolet ozone (UVO) treatment for 15min to enhance the bonding of the subsequent NiO. Subsequently, the NiO hole transport layer (thickness 30nm) was prepared on the first electrode layer.

[0115] (3) Preparation of the Cs 0.05 FA 0.95 PbI3 perovskite layer

[0116] A 1.5 mol / L concentration of Cs was dropped onto the surface of a substrate already coated with a hole transport layer. 0.05 FA 0.95 The PbI3 perovskite precursor solution was used for spin coating at 4000 rpm for 30 seconds. After spin coating, it was transferred to a hot plate at 100°C for annealing and crystallization for 10 minutes to obtain a uniform and dense perovskite film with a thickness of 500 nm.

[0117] (4)C 60 Fabrication of electron transport layer and BCP blocking layer

[0118] The devices coated with the perovskite layer were transferred to the evaporation chamber, C 60 Place the container in the evaporation boat and close the door. Evacuate to a vacuum level of 10. -4 Pa, with Evaporation speed of 20nm C 60 Electron transport layer; subsequently, BCP (Bath Copper Fiber) was placed in the evaporation boat, to... The 8nm BCP barrier layer is evaporated at a speed of [missing information].

[0119] (5) Preparation of the second electrode

[0120] The device with the electron transport layer and barrier layer prepared above is placed in a photomask, transferred to a PVD chamber, the chamber door is closed, and an ITO layer with a thickness of 100 nm is sputtered.

[0121] Examples 2-3:

[0122] The difference from Example 1 lies in the sputtering time for preparing the copper nitride modified layer in step (1). In Example 2, a copper nitride modified layer with a thickness of 10 nm was obtained by sputtering for about 8 minutes, while in Example 3, a copper nitride modified layer with a thickness of 500 nm was obtained by sputtering for about 400 minutes. The other steps are the same as in Example 1 and will not be described again here.

[0123] Examples 4-5:

[0124] The difference from Example 1 lies in step (1) the preparation of the first electrode layer, specifically:

[0125] Example 4: In a vacuum environment, a 50 μm thick PET polymer film substrate was subjected to plasma pretreatment to improve the surface quality of the substrate and enhance the adhesion between the substrate and the metal coating. The plasma treatment atmosphere was a mixture of argon and oxygen with a volume ratio of 8:2, and the treatment time was 3 min. Then, a 10 μm thick copper metal host layer was deposited on the surface of the PET substrate using physical vapor deposition (PVD).

[0126] The prepared copper metal main layer of the base film was placed in the hydrothermal reactor, the temperature was kept at 60°C, and the reaction was carried out for 3 hours. After the reaction, the copper sulfide modified layer with a thickness of 100 nm was obtained by rinsing with anhydrous ethanol and deionized water and drying. The copper metal main layer and the copper sulfide modified layer constitute the first electrode layer.

[0127] In a vacuum environment, the surface of a 50 μm thick PET polymer film substrate was subjected to plasma pretreatment to improve the surface quality of the substrate and the adhesion between the substrate and the metal coating. The plasma treatment atmosphere was a mixture of argon and oxygen with a volume ratio of 8:2, and the treatment time was 3 min. Then, a 10 μm thick titanium metal main layer was deposited on the surface of the PET substrate by physical vapor deposition (PVD) process.

[0128] Subsequently, the sputtered base film with the prepared titanium metal main layer was placed in the magnetron sputtering cabin, and the vacuum was extracted to 1×10 -4 Pa, argon gas was filled for 5 min for pre-sputtering to clean the target surface, then nitrogen gas was filled, the total sputtering gas pressure was controlled at 2 Pa, the ratio of nitrogen and argon was 2:1, and the sputtering power was controlled at 100 W. The sputtering target material was a 99.999% high-purity titanium target, the distance between the target and the base film was 15 cm, the sputtering gas was high-purity nitrogen and argon, which were controlled by mass flow meters, respectively, and the thickness of the titanium nitride modified layer was controlled by controlling the reaction time. After sputtering for about 80 min, a 100 nm thick titanium nitride modified layer was obtained. The titanium metal main layer and the titanium nitride modified layer constitute the first electrode layer.

[0129] The other steps are the same as those in Example 1 and are not described here.

[0130] Examples 6-7:

[0131] The difference between Example 1 and Example 6 is that the PVD process parameters in step (1) are different. In Example 6, a 3 μm thick copper metal main layer was deposited on the surface of the PET substrate by PVD process for 1.5 min. In Example 7, a 100 μm thick copper metal main layer was deposited on the surface of the PET substrate by PVD process for 50 min. The other steps are the same as those in Example 1 and are not described here.

[0132] Comparative Example 1:

[0133] Compared with Example 1, there is no modified layer, and the other steps are the same as those in Example 1 and are not described here.

[0134] Comparative Example 2:

[0135] The difference between Example 1 and Comparative Example 2 is that the modified layer is changed from copper nitride to indium tin oxide (ITO), and step (1) is as follows:

[0136] In a vacuum environment, the surface of a 50 μm thick PET polymer film substrate is plasma pretreated to improve the surface quality of the substrate and the adhesion of the metal coating to the substrate. The plasma treatment is performed in an atmosphere of a mixture of argon and oxygen at a volume ratio of 8:2 for 3 min. Then a 10 μm thick copper metal main layer is deposited on the surface of the PET substrate by physical vapor deposition (PVD) for 5 min.

[0137] The sputtering substrate film with the prepared copper metal main layer is placed in the cavity of a magnetron sputtering device. The vacuum degree is 1×10 -5 Pa~2×10 -1 Pa, and the process gas is argon and oxygen. Indium tin oxide is used as the target material, and the mass content of indium oxide in the target material is 90%. An RF power source is used to control the temperature of the substrate to be 25°C. An indium tin oxide film is deposited on the substrate by magnetron sputtering. The argon flow rate is 20 sccm, and the oxygen flow rate is 0.36 sccm. The thickness of the indium tin oxide is 100 nm. The copper metal main layer and the ITO modification layer form a first electrode layer.

[0138] The other steps are the same as in Example 1 and are not described here.

[0139] II. Performance characterization of perovskite solar cell devices

[0140] 1. Ion diffusion test

[0141] A hole transport layer and a perovskite layer are prepared in sequence on the first electrode layer (Cu) of Comparative Example 1, the first electrode layer (Cu main layer / ITO modification layer) of Comparative Example 2, and the first electrode layer (Cu main layer / CuN modification layer) of Example 1 (see Comparative Example 1, Comparative Example 2, and Example 1, respectively). Subsequently, the three kinds of films are placed on a hot stage, the temperature is set to 120°C, and heating is performed for 5 h in an environment with a humidity greater than 35% RH (relative humidity). The surface changes of the perovskite films are observed. See FIG. 4, which is an aging comparison diagram of perovskite films under different first electrode layer structures.

[0142] In FIG. 4, the perovskite film with the first electrode layer of Cu ages most obviously, and the perovskite films with the first electrode layer of Cu main layer / ITO modification layer and Cu main layer / CuN modification layer have no obvious changes.

[0143] 2. Bending performance test

[0144] The bending radius was set to 20 mm by adjusting the bending tester sensor position; the sample (Example 1, Comparative Example 2) was fixed on the clamping table by clamping and fixing, the bending frequency was set to 3 bending cycles per second, the bending number was set to 1000; the bending operation mode was single slide rail operation. The bending resistance was evaluated by testing the change of sheet resistance value after bending.

[0145] 3. Photoelectric performance test

[0146] Under the irradiation of standard simulated sunlight (AM 1.5G, 100 mW / cm 2 ), the cell performance was tested, the test voltage was from -0.1V to 1.2V, the cell area was 0.075 cm 2 , and the I-V curve was obtained. According to the I-V curve and the data feedback from the test equipment, the short-circuit current J sc (unit: mA / cm 2 ), open-circuit voltage V oc (unit: V), maximum light output current J mpp (unit: mA) and maximum light output voltage V mpp (unit: V) can be obtained. The fill factor FF of the cell was calculated by the formula FF = J sc × V oc / (J mpp × V mpp ), unit: %. The photoelectric conversion efficiency PCE of the cell was calculated by the formula PCE = J sc × V oc × FF / P w , unit: %; P w represents the input power, unit: mW.

[0147] The test results are shown in Tables 1 and 2.

[0148] Table 1: Test parameter table of each example and comparative example

[0149] Note: The bending number of the sample in Examples 1-7 and Comparative Examples 1-2 is 1000 times.

[0150] Table 2: Photoelectric performance test table of three solar cells

[0151] III. Analysis of performance test results of perovskite solar cell devices

[0152] 1、According to the performance test results of Table 1, compared with the solar cell device in Comparative Example 2 using ITO in the prior art as the modification layer, the sheet resistance of the first electrode layer of the solar cell device provided by the present application in Examples 1-7 is significantly smaller before bending, and the sheet resistance of the first electrode layer is still smaller after bending 1000 times, indicating that the solar cell device provided by the present application has good conductivity and bending resistance of the first electrode layer, thus being beneficial to improve the conductivity and reliability of the solar cell device, thereby improving the stability of the solar cell device.

[0153] 2、According to the photoelectric performance test results of the solar cell in Table 2, the photoelectric conversion efficiency of the solar cell device of Example 1 is better than that of Comparative Example 1 without a modification layer and Comparative Example 2 with a conventional ITO modification layer, because the copper nitride modification layer provided by the present application has an energy level modification effect, and the first electrode layer composed of the copper main layer and the copper nitride modification layer has good conductivity, thus being able to improve the photoelectric conversion efficiency of the solar cell.

[0154] The above description is only an embodiment of the present application, and does not limit the patent scope of the present application, and any equivalent structure or equivalent flow transformation using the content of the specification and drawings, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A solar cell, wherein, The solar cell comprises at least a first electrode layer, a light absorbing layer and a second electrode, the light absorbing layer comprises a perovskite material, the first electrode layer comprises a main body layer and a modification layer, the modification layer is located between the main body layer and the light absorbing layer, the main body layer comprises a metal, the modification layer has electrical conductivity, and the modification layer comprises one or more of nitrides and sulfides of the metal.

2. The solar cell of claim 1, wherein, The metal comprises one or more of copper, molybdenum and titanium.

3. The solar cell of claim 1 or 2, wherein, The main body layer comprises copper, and the modification layer comprises copper nitride.

4. The solar cell according to any one of claims 1 to 3, wherein The thickness of the modification layer is 10 nm to 500 nm.

5. The solar cell of claim 4, wherein, The thickness of the modification layer is 10 nm to 100 nm.

6. The solar cell according to any one of claims 1 to 5, wherein The thickness of the main body layer is 3 μm to 100 μm.

7. The solar cell of claim 6, wherein, The thickness of the main body layer is 3 μm to 10 μm.

8. The solar cell according to any one of claims 1 to 7, wherein The sheet resistance of the first electrode layer is less than or equal to 1 mΩ / m 2 .

9. The solar cell of claim 8, wherein, The sheet resistance of the first electrode layer is 0.2 mΩ / m 2 ~ 0.5 mΩ / m 2 .

10. The solar cell according to any one of claims 1 to 9, wherein The work function of the modification layer is greater than the highest occupied molecular orbital energy level of the perovskite material and less than the work function of the main body layer.

11. The solar cell according to any one of claims 1 to 10, wherein The solar cell further comprises a base layer, the base layer is arranged on the side of the main body layer away from the modification layer, and the base layer comprises a bend-resistant polymer.

12. The solar cell of claim 11, wherein, The bend-resistant polymer comprises any one or more of polyethylene terephthalate, polynaphthalene dimethylene vinyl, polyimide and polydimethylsiloxane.

13. A method of fabricating a solar cell, wherein, The solar cell comprises at least a first electrode layer, a light absorbing layer and a second electrode, the light absorbing layer comprises a perovskite material, the first electrode layer comprises a main body layer and a modification layer, the modification layer is located between the main body layer and the light absorbing layer, the main body layer comprises a metal, the modification layer has electrical conductivity, and the modification layer comprises one or more of nitrides and sulfides of the metal. The metal comprises one or more of copper, molybdenum and titanium. The main body layer comprises copper, and the modification layer comprises copper nitride. The thickness of the modification layer is 10 nm to 500 nm. The thickness of the modification layer is 10 nm to 100 nm.

14. The method of producing a solar cell according to claim 13, wherein The thickness of the main body layer is 3 μm to 100 μm.

15. The method for manufacturing a solar cell according to claim 13 or 14, wherein The thickness of the main body layer is 3 μm to 10 μm. The work function of the modification layer is greater than the highest occupied molecular orbital energy level of the perovskite material and less than the work function of the main body layer. The solar cell further comprises a base layer, the base layer is arranged on the side of the main body layer away from the modification layer, and the base layer comprises a bend-resistant polymer.

16. An electrical device, comprising: The bend-resistant polymer comprises any one or more of polyethylene terephthalate, polynaphthalene dimethylene vinyl, polyimide and polydimethylsiloxane.

17. A power generation apparatus wherein, The solar cell comprises at least a first electrode layer, a light absorbing layer and a second electrode, the light absorbing layer comprises a perovskite material, the first electrode layer comprises a main body layer and a modification layer, the modification layer is located between the main body layer and the light absorbing layer, the main body layer comprises a metal, the modification layer has electrical conductivity, and the modification layer comprises one or more of nitrides and sulfides of the metal. The metal comprises one or more of copper, molybdenum and titanium. The main body layer comprises copper, and the modification layer comprises copper nitride. The thickness of the modification layer is 10 nm to 500 nm. The thickness of the modification layer is 10 nm to 100 nm. The thickness of the main body layer is 3 μm to 100 μm. The thickness of the main body layer is 3 μm to 10 μm. The work function of the modification layer is greater than the highest occupied molecular orbital energy level of the perovskite material and less than the work function of the main body layer. The solar cell further comprises a base layer, the base layer is arranged on the side of the main body layer away from the modification layer, and the base layer comprises a bend-resistant polymer. The bend-resistant polymer comprises any one or more of polyethylene terephthalate, polynaphthalene dimethylene vinyl, polyimide and polydimethylsiloxane.

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