Stacked isotope battery and multilayer capacitor

Abstract

Provided is a stacked isotope battery comprising: a plurality of stacked isotope electrode sheets; and a first external electrode of a first polarity and a second external electrode of a second polarity, which are electrically connected to the plurality of isotope electrode sheets so as to transfer, to an external load, the electrical energy generated in the plurality of stacked isotope electrode sheets, wherein each of the plurality of isotope electrode sheets comprises a substrate of chemical formula AMO3 (where A is at least one selected from the group consisting of La, Ba, Sr and K, and M is at least one selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta and Zr) and a radiation source extending in the thickness direction of the substrate, and the substrate comprises a first doped layer doped with a first conductivity type dopant and a second doped layer doped with a second conductivity type dopant.

Description

Description of the invention Title of the invention: Layered isotope battery and layered capacitor Technology field [1] The present invention relates to a layered isotope battery and a layered capacitor. [2] This application claims the benefit of priority to Korean Patent Application No. 10-2024-0111556, dated August 20, 2024, and Korean Patent Application No. 10-2025-0114971, dated August 19, 2025, the entire contents of which are incorporated herein by reference. [3] Background technology Radiation emitted by radioactive isotopes can be absorbed through the surface of a pn junction semiconductor and converted into electrical energy. The radiation generates electron-hole pairs in the space charge region within the pn junction semiconductor, and the resulting carriers exhibit voltage-current characteristics. [4] Contents of the invention Technical challenges The first technical task to be achieved by the present invention is to provide a layered isotope battery capable of generating electrical energy with high energy density. [5] The second technical task to be achieved by the present invention is to provide a laminated capacitor capable of generating electric energy with high energy density. [6] Means of solving problems The present invention provides a stacked isotope battery, which comprises a plurality of stacked isotope electrode sheets, and a first external electrode of a first polarity and a second external electrode of a second polarity electrically connected to the plurality of isotope electrode sheets to transmit electric energy generated from the plurality of stacked isotope electrode sheets to an external load, wherein each of the plurality of isotope electrode sheets comprises a substrate having a chemical formula of AMO3 (wherein A is at least one selected from the group consisting of La, Ba, Sr, and K, and M is at least one selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr); and a radiation source extending in the thickness direction of the substrate, wherein the substrate comprises a first doped layer doped with a first conductive type dopant and a second doped layer doped with a second conductive type dopant. [7] In some embodiments, the substrate comprises BaSnO3, BaHfO3, BaZrO3, BaHf1-xTi₄O3 (wherein 0 <x<1), Ba1-xLaxSnO3(여기서 0<x<1), Bi4Ge3O12, Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn1-xGaxO3(여기서 0<x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2Ox 및 LaAlO3로 구성되는 군으로부터 선택된 1종 이상을 주성분으로 할 수 있다. [8] In some embodiments, the substrate may contain BaSnO3 as a main component. [9] In some embodiments, the first doped layer and the second doped layer may form a homojunction.

[10] In some embodiments, the radiation source may be disposed within a through-hole penetrating the substrate, the first doped layer may be disposed to surround a side surface of the radiation source, and the second doped layer may be disposed to surround a side surface of the first doped layer.

[11] In some embodiments, the radiation source may be positioned within a slit penetrating the substrate.

[12] In some embodiments, the substrate may include a plurality of slits, and the radiation source may be positioned within each of the plurality of slits.

[13] In some embodiments, the first doped layer may extend to form a circumference of the radiation source, and the second doped layer may extend in the circumferential direction of the first doped layer of the substrate and be arranged to face each other.

[14] In some embodiments, the plurality of stacked isotope electrode sheets may be identical dies.

[15] In some embodiments, the plurality of stacked isotope electrode sheets can be electrically connected to each other by solder.

[16] In some embodiments, the power chip may include a controller chip provided on one side of the plurality of stacked isotope electrode sheets and capable of controlling the emission of electrical energy generated from the plurality of isotope electrode sheets.

[17] In some embodiments, the plurality of stacked isotope electrode sheets may be bonded by a bonding resin.

[18] In some embodiments, at least one dummy electrode may be exposed through the bonding resin.

[19] In some embodiments, each of the plurality of isotope electrode sheets includes a first electrode portion provided in the first doping layer and a second electrode portion provided in the second doping layer, and the first electrode portion and the second electrode portion of one isotope electrode sheet can be in direct electrical contact with the electrode portion of an isotope electrode sheet disposed in another layer.

[20] In some embodiments, the radiation source may include a first portion provided within a trench extending along one surface of the substrate; and a second portion provided within a through-hole extending from a bottom surface of the trench to the other surface of the substrate.

[21] In some embodiments, the width dimension of the first portion may be greater than the width dimension of the second portion.

[22] In some embodiments, the width dimension of the first portion and the corresponding first doped layer may be greater than the width dimension of the second portion and the corresponding second doped layer.

[23] In order to achieve the second technical task, the present invention provides a laminated capacitor including a plurality of laminated isotope electrode sheets, and a first external electrode of a first polarity and a second external electrode of a second polarity electrically connected to the plurality of isotope electrode sheets so as to transmit electric energy generated from the plurality of laminated isotope electrode sheets to an external load. Each of the plurality of isotope electrode sheets includes a substrate having a chemical formula of AMO3 (wherein A is at least one selected from the group consisting of La, Ba, Sr, and K, and M is at least one selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr) and a radiation source extending in the thickness direction of the substrate, wherein the substrate is a laminated capacitor having a first region doped with a first conductive type dopant and a second region doped without a dopant.

[24] In some embodiments, the first region and the second region may form a homojunction. Effect of invention

[25] The laminated isotope battery and laminated capacitor of the present invention have the effect of generating electric energy with high energy density.

[26] According to exemplary embodiments of the present invention, in addition to high efficiency, other effects not yet discovered through research can be achieved. The reliability of the high efficiency can be readily deduced by those skilled in the art to which the exemplary embodiments of the present invention pertain. In other words, the exemplary embodiments of the present invention possess high reliability, and thus, based on this high reliability, they can be helpful to those skilled in practical applications. Brief description of the drawing

[27] FIG. 1 is a cross-sectional side view showing a layered isotope battery according to one embodiment of the present invention.

[28] Figures 2a and 2b are enlarged views of the area around the radiation source of the isotope electrode sheet, respectively.

[29] FIGS. 3A to 3C are plan views each showing a form in which the radiation source is placed within a through-hole according to embodiments of the present invention.

[30] FIG. 4a and FIG. 4b are plan views each showing a form in which the radiation source is placed within a slit according to embodiments of the present invention.

[31] FIG. 5 is a cross-sectional side view showing a stacked isotope battery according to another embodiment of the present invention.

[32] FIGS. 6 to 8C are cross-sectional side views each showing a laminated capacitor according to different embodiments of the present invention.

[33] Figure 9a is a cross-sectional side view of the isotope electrode sheet of the laminated capacitor of Figure 1.

[34] Figure 9b is a cross-sectional view taken along line XX of Figure 9a.

[35] FIG. 9c is a cross-sectional side view showing a stacked battery according to one embodiment of the present invention.

[36] FIG. 10A is a cross-sectional side view of an isotope electrode sheet according to another embodiment of the present invention.

[37] Figure 10b is a partially enlarged perspective view showing the first electrode section, radiation source, and insulating film of the above isotope battery.

[38] FIG. 11 is a cross-sectional side view showing an isotope battery according to another vertical example of the present invention.

[39] Figures 12a to 12h are process diagrams showing a method for manufacturing a laminated capacitor according to one embodiment of the present invention.

[40] FIG. 13 is a cross-sectional side view showing a stacked capacitor according to one embodiment of the present invention. Best mode for carrying out the invention

[41] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention may be modified in various different forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. Embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art, and like reference numerals in the drawings represent like elements. Accordingly, the shapes of elements in the drawings are exaggerated to emphasize a clearer description. Like reference numerals designate like elements throughout the specification.

[42] While terms like "first" and "second" may be used to describe various components, these components should not be limited by these terms. These terms are used solely to distinguish one component from another. For example, a first component could be referred to as a "second component," and vice versa, without departing from the scope of the present invention.

[43] The terminology used herein is for the purpose of describing specific embodiments only and is not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, it should be understood that the expressions "comprises" or "has" indicate the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, but do not preclude the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[44] Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the art to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning within the context of the relevant technology, and unless explicitly defined herein, they shall not be interpreted in an idealized or overly formal sense.

[45] When an embodiment is said to be connected to another component, this may be directly connected to the other component, or it may be connected through another component intervening. For example, for convenience of explanation, the spatial relationship between the components may be described, but this does not limit the technical concept and may vary depending on the usage environment and direction of operation.

[46] All of them can be exposed, and sometimes they can be expected to be deformed into a predetermined shape depending on the main manufacturing technology or workmanship. Since the trench is typically formed to isolate the formation area of ​​the semiconductor element, the shape of the edge or corner of the pattern formed on the substrate should generally be clearly expressed. However, sometimes, a component expressed as "smooth" or "flexible" in the drawing has a meaning beyond that. In addition, the term "connection" as used herein includes a case where it is functionally connected, and a predetermined shape formed in that expression can also be understood as part of that functional expression. In addition, "the exposed surface of the substrate" as used herein can mean various expressions, such as a part of a structure formed on the substrate and a predetermined type of exposed area.

[47] FIG. 1 is a cross-sectional view showing a layered isotope battery (1) according to one embodiment of the present invention.

[48] Referring to FIG. 1, the laminated isotope battery (1) may include a plurality of isotope electrode sheets (10) across the thickness direction (or vertical direction) (V) of the substrate.

[49] Each of the plurality of isotope electrode sheets (10) may include a substrate (100) and at least one radiation source (200).

[50] The above substrate (100) may have a first surface and a second surface facing the first surface.

[51] The substrate (100) may include a second region (2) extending from a first region (1) on a first surface. The substrate (100) may be an upper main surface. The substrate (100) may include a first doped layer (110) disposed on one side of a radiation source (200) and a second doped layer (120) disposed on one side of the first doped layer (110).

[52] As schematically illustrated in the first and second drawings, the first doped layer (110) and the second doped layer (120) may be arranged to be spaced apart from each other. The first doped layer (110) may be arranged in a direction facing each other across the horizontal direction (C) that is perpendicular to the thickness direction (T) of the substrate, i.e., the direction in which the first surface and the second surface of the second doped layer (120) extend. For example, the first doped layer (110) and the second doped layer (120) may form a channel extending in the thickness direction (T) of the substrate. The first doped layer (110) and the second doped layer (120) may form a pn junction in the channel.

[53] The radiation source (200) may be disposed within the substrate (100). For example, the radiation source (200) may be formed to completely penetrate the substrate (100) from the first surface (upper main surface) to the second surface (lower main surface). In this way, the radiation source (200) may be disposed within the cavity (105) of the first region of the substrate (100), and the cavity (105) may extend from the first surface of the substrate (100) to the second surface.

[54] In some embodiments, the radiation source (200) may completely or partially fill the cavity (105). In some embodiments, the radiation source (200) may be in contact with a side surface of the cavity (105).

[55] The above-mentioned material (100) may be a non-conductive material or a semiconductor.

[56] The above-described substrate (100) may include, for example, a III-V group compound semiconductor material. The III-V group semiconductor material may include InP, InGaP, ZnSe, AlAs, AlAs, or amorphous diamond (yttria-stabilized zirconia, YSZ) such as alumina.

[57] In some embodiments, the substrate (100) may include diamond, carbon, a SiC substrate, a GaN substrate, a Bi2O3 / Ga2O3 substrate, a Sm2O3 / Bi2O3 substrate, a Sm2O3 / Bi2O3 substrate, a Sm2O3 / Bi2O3 / Ga2O3 substrate, a sapphire substrate, or a combination thereof, which may not be limited as described herein.

[58] In some other embodiments, the substrate (100) may include a diamond substrate, a SiC substrate, a GaN substrate, a Bi2O3 / Ga2O3 substrate, a Sm2O3 / Bi2O3 / Ga2O3 substrate, a Sm2O3 / Bi2O3 / H2O3 substrate, a Sm2O3 / Bi2O3 / Ga2O3 / H2O3 substrate, a sapphire substrate, or a combination thereof, which may be a substrate coated with a dopant.

[59] In some embodiments, the substrate (100) may include a metal oxide having a band gap energy of 2.7 eV or more. Since the metal oxide has a wide band gap and high electron mobility, the radiation density emitted from the radiation source (200) can efficiently absorb photons emitted from photon generation (250) having the properties of light, thereby providing high energy conversion efficiency. In addition, it is advantageous for radiation because it does not cause damage without nonlinearity loss in carrier movement. For example, the metal oxide may have a high carrier mobility of 45 cm² / V·s or more, 80 cm² / V·s or more, 120 cm² / V·s or more, and further 300 cm² / V·s or more.

[60] Some metal oxides have the advantage of having wide carrier mobility, and their conductive properties can be reduced depending on the direction of the applied bias.

[61] In some embodiments, the substrate (100) may include a metal oxide having the chemical formula AMO3 (wherein A is at least one selected from the group consisting of La, Ba, Sr, and K, and M is at least one selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr).

[62] Specifically, the above-described (100) is BaSnO3, BaHfO3, BaZrO3, BaHf1-xTixO3 (wherein 0 <x<1), Ba1-xLaxSnO3(여기서 0<x<1), Bi4Ge3O12, Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn1-xGaxO3(여기서 0<x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2Ox 및 LaAlO3로 구성되는 군으로부터 선택된 1종 이상을 포함할 수 있다(여기서 0<x<1).

[63] In some embodiments, the substrate (100) is BaSnO3, BaHfO3, BaZrO3, BaHf1-xTixO3 (wherein 0 <x<1), Ba1-xLaxSnO3(여기서 0<x<1), Bi4Ge3O12, Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn1-xGaxO3(여기서 0<x<1) 및 LaAlO3로 구성되는 군으로부터 선택된 1종 이상을 주성분으로 포함할 수 있다.

[64] Here, “main component” means that the component exceeds 50 wt% overall on an evaporation basis.

[65] In some embodiments, the substrate (100) may contain BaSnO3 as a main component.

[66] The above substrate (100) may be substantially partially doped with a dopant. The above substrate (100) may be insulated into two electrically insulating portions, the p-type or n-type doped portion.

[67] Figure 2a or 2b is a partial enlarged view showing in detail the area around the above-mentioned isotope electrode sheet (10) and the radiation source (200).

[68] Referring to FIG. 2a, the radiation source (200) can extend in the substrate thickness direction (T) of the substrate (100), and FIG. 2a illustrates that the radiation source (200) penetrates the substrate (100) in the substrate thickness direction (T), but the present invention is not limited thereto.

[69] The first doped layer (110) and the second doped layer (120) can form a transparent thin film adjacent to the radiation source (200). For example, the first doped layer (110) and the second doped layer (120) can be formed of a transparent conductive oxide (dye sensitized) or a combination thereof, and can efficiently generate electron-hole pairs by radiation.

[70] The substrate (100) may include a recess, i.e., a cavity (105). In some embodiments, the cavity (105) may be a parallel substrate extending concentrically along a planar surface of the substrate (100), as illustrated in FIG. 3A. The recess may completely penetrate the substrate (100), or may partially penetrate it.

[71] The first doped layer (110) may be arranged to surround the side surface of the radiation source (200). The first doped layer (110) may extend uniformly along the thickness of the substrate (100). The first doped layer (110) may be arranged within the concave portion. In some embodiments, the first doped layer (110) has a higher electrical conductivity than the substrate (100).

[72] In some embodiments, the first doped layer (110) may have an electrical conductivity higher than that of the substrate (100). In some embodiments, the first doped layer (110) has a band gap of 2.7 eV or more, 3.0 eV or more, or 3.5 eV or more.

[73] The radiation source (200) may extend within the substrate (100). In some embodiments, the radiation source (200) may be positioned within the recessed portion and spaced apart from the substrate. In some embodiments, the radiation source (200) may be positioned within the substrate (100) and spaced apart from the substrate. In some embodiments, the first doped layer (110) may be conformally provided within the recess. In this case, the first doped layer (110) may have a recessed space surrounding the recessed space. In some embodiments, the radiation source (200) may be disposed within the recessed space.

[74] In some embodiments, the radiation source (200) may be arranged to penetrate the substrate (100). The first doped layer (110) may be interposed between the substrate (100) and the radiation source (200). Specifically, the first doped layer (110) may be arranged on a side surface of the radiation source (200), and the substrate (100) may be arranged on a side surface of the first doped layer (110). The substrate (100) includes a second doped layer (120) doped with an impurity, and the second doped layer (120) faces the first doped layer (110). In this case, the second doped layer (120) may surround a side surface of the first doped layer (110).

[75] The second doped layer (120) may have a conductivity type opposite to that of the first doped layer (110). In some embodiments, the first doped layer (110) and the second doped layer (120) may form a homojunction. In some other embodiments, the first doped layer (110) and the second doped layer (120) may form a heterojunction.

[76] The first doped layer (110) may be doped with a dopant of the first conductivity type. The second doped layer (120) may be doped with a dopant of the second conductivity type. The first doped layer (110) and the second doped layer (120) may generate electron-hole pairs by radiation emitted from a radiation source (200). In some embodiments, the first doped layer (110) and the second doped layer (120) may form a homojunction.

[77] In some embodiments, the substrate (100) may have an undoped region (109) that is not doped with a dopant. The undoped region (109) may not mean a region that does not contain any dopant at all, but rather a region in which the concentration of the dopant is below a certain level. For example, the dopant concentration of the undoped region (109) may be less than 1E15 cm⁻³.

[78] In some embodiments, the first conductive dopant may be an n-type dopant and the second conductive dopant may be a p-type dopant. In some other embodiments, the first conductive dopant may be a p-type dopant and the second conductive dopant may be an n-type dopant. Those skilled in the art will understand that, depending on the conductive type of the dopant doped in each region, one of the first doped layer (110) and the second doped layer (120) may act as a cathode and the other may act as an anode. That is, if the first conductive dopant is an n-type dopant and the second conductive dopant is a p-type dopant, the first doped layer (110) may act as an anode and the second doped layer (120) may act as a cathode. Conversely, if the dopant of the first conductive type is a p-type dopant and the dopant of the second conductive type is an n-type dopant, the first doped layer (110) can act as a cathode and the second doped layer (120) can act as an anode.

[79] The region doped with the above n-type dopant may be, for example, a semiconductor region doped with elements of Group 15 of the periodic table, such as nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb), or may be a compound semiconductor doped with elements of Group 15 of the periodic table, such as nitrogen (N), phosphorus (P), arsenic (As), or antimony. In the present specification, a compound semiconductor means a semiconductor composed of two or more elements, and may include, for example, silicon carbide, silicon nitride, aluminum phosphide (AlP), aluminum arsenide (AlAs), arsenic nitride (GaAs), and the like.

[80] The region doped with the above p-type dopant may be, for example, a semiconductor region doped with elements of Group 13 of the periodic table, such as boron (B), aluminum (Al), gallium (Ga), or indium (In), or may be a semiconductor thin film doped with elements of Group 13 of the periodic table, such as boron (B), aluminum (Al), gallium (Ga), or indium (In).

[81] The first doping layer and the second doping layer form a homogeneous junction. In some cases, a semiconductor having the chemical formula of amorphous AMO₃ may be used as the first doping layer (110) and the second doping layer (120). In this case, hydrogen (H), lanthanum (La), boron (B), etc. may be used as p-type dopants, and lanthanum (La), indium (In), tin (Sn), etc. may be used as n-type dopants.

[82] In some embodiments, the first doped layer (110) and the second doped layer (120) may include an organic material that generates electricity by receiving light in the field of thin film batteries. For example, the first doped layer (110) and the second doped layer (120) may include a thiophene-based compound. Meanwhile, the first doped layer (110) and the second doped layer (120) may also be in the form of an organic-inorganic hybrid by appropriately combining conductive organic materials and organic materials.

[83] In some embodiments, a regular spatial arrangement may be formed at the interface where the first doped layer (110) and the second doped layer (120) contact each other.

[84] The embodiment illustrated in FIG. 2a differs from the embodiment described with reference to FIG. 2a in that the non-doped region (109) of the substrate (100) does not exist, and therefore, the following description will focus on this difference, and redundant descriptions will be omitted.

[85] Referring to FIG. 2b, the dopant is uniformly doped throughout the entire substrate (100), and the substrate (100) can substantially coincide with the second doped layer (120). The dopant can be doped at a concentration of, for example, about 1E16 cm⁻³ to about 1E19 cm⁻³.

[86] In some embodiments, the radiation source (200) may be placed within a through-hole penetrating the substrate (100). FIGS. 3A to 3C are plan views illustrating a form in which the radiation source (200) is placed within a through-hole (101) according to embodiments of the present invention.

[87] Referring to FIG. 3a, the substrate (100) is provided with a plurality of through-holes (101) penetrating the substrate (100), and the radiation source (200) can be placed within the through-holes (101).

[88] The above through-holes (101) can typically be formed in a circular shape due to technical limitations. If multiple through-holes are adjacent to each other, they may be formed by a method such as isotropic etching. In some embodiments, the through-holes (101) may be formed asymmetrically in the substrate (100). In some embodiments, the through-holes (101) may be formed by reactive ion etching (RIE).

[91] As illustrated in FIG. 3A, the through-holes (101) may have a circular cross-section. Optionally, the through-holes (101) may have a cross-section of a regular polygon, such as a triangle, square, pentagon, or hexagon, and the substrate (100) may be irregularly provided with cavities (105) having different configurations.

[92] In some embodiments, the through-holes (101) have an arrangement having a predetermined rule. In some embodiments, the through-holes (101) may be arranged to coincide with the vertices of an imaginary equilateral triangle that is arranged in a continuous manner parallel to each other.

[93] Each of the above through holes (101) is arranged to regularly connect virtual equilateral triangles, thereby allowing the radiation source (200) to have horizontal symmetry as a whole.

[94] In some embodiments, the first doped layer (110) may be arranged to surround a side surface of the radiation source (200). In some embodiments, the second doped layer (120) may be arranged to surround a side surface of the first doped layer (110).

[95] Referring to FIG. 3A, the outer surfaces of the through-holes (101) may have concave portions, i.e., the through-holes (101) may have concave portions and convex portions. This may have limited requirements in the manufacturing process (110) of the radiation source (200). In some embodiments, the outer walls of the first doped layer (110) and the second doped layer (120) may have concave requirements.

[96] The first doped layer (110) may have a substantially constant thickness as illustrated in FIG. 3b. Accordingly, the inner walls of the first doped layer (110) and the second doped layer (120) may have a shape corresponding to the outer wall of the first doped layer (110) of the radiation source (200).

[97] Since the outer walls of the above through-holes (101) are concave, the contact area of ​​the first doped layer (110) can be increased, thereby improving the efficiency of the radiation source (200). In addition, since the uneven shape of the surfaces of the first doped layer (110) and the second doped layer (120) is large, the contact area between the first doped layer (110) and the second doped layer (120) can be increased, thereby improving the efficiency of the isotope cell (1).

[98] Referring to Fig. 3c, the through-holes (101) can be modified to be positioned at the vertices of virtual isosceles triangles that are arranged adjacent to each other and in series. As in Fig. 3a, the positions of the vertices of the virtual equilateral triangles that are arranged in series can be substantially the same as the processing depth ratio of the through-holes (101).

[99] In some embodiments, shapes different from the machining depth ratio of the through-holes (101) may be implemented. In this case, the through-holes (101) may be arranged more irregularly.

[100] In some embodiments, the radiation source (200) may be placed within a slit penetrating the substrate (100). FIGS. 4A and 4B are plan views illustrating a form in which the radiation source (200) is placed within a slit (102) according to embodiments of the present invention.

[101] Referring to FIG. 4A, the substrate (100) may include a plurality of slits (102) arranged in one direction. As shown in FIG. 4A, the manufacturing process within the slits (102) is such that the slits (102) are horizontal cross-sections that extend in a first direction (R1), whereas the extended meaning is in a second direction (R2), which is perpendicular to the thickness direction (T) of the substrate (100).

[102] In some embodiments, the side of the radiation source (200) may contact the side of the slits (102). The radiation source (200) may contact the bottom surface of the slits (102).

[103] In some embodiments, the first doped layer (110) may be arranged to face the side extending long from the radiation source (200), and the first doped layer (110) may face the side extending long from the second doped layer (120). For example, the first doped layer (110) may be arranged nonlinearly along the longitudinal direction extending in the first direction (R1) of the slit (102), such that the first doped layer (110) substantially horizontally extends and surrounds the single slit (102), as illustrated in FIG. 4B. In this case, the first doped layer (110) may be arranged to surround and partially surround the radiation source (200).

[104] In some embodiments, the second doped layer (120) may be positioned to face the elongated side surface of the first doped layer (110). For example, the second doped layer (120) may extend along the longitudinal direction of the slit (102) and along a portion of the first doped layer (110).

[105] In some embodiments, the first doped layer (110) may be arranged to surround a side surface of the radiation source (200). In some embodiments, the second doped layer (120) may be arranged to surround a side surface of the first doped layer (110). In some embodiments, as exemplarily illustrated in FIG. 4A, the second doped layer (120) may completely surround a side surface of the first doped layer (110).

[106] Referring to FIG. 4b, the side walls of the slits (102) may have a roughness. That is, the slits (102) may have concave and convex portions. The radiation source (200) and the first doping layer (110) may have limited requirements.

[107] By having the side walls of the above slits (102) with irregularities, the contact area between the radiation source (200) and the first doping layer (110) can be increased, thereby improving the efficiency of the radiation source (200).

[108] Although the entire substrate (100) is illustrated as being the second doped layer (120) in FIGS. 1 to 4B, the present invention is not limited thereto. In some embodiments, regions with different conductivity types or different dopant concentrations may exist within the substrate (100), a region that is not doped with a specific conductivity type, i.e., an undoped region (109), as in FIG. 2A, or a region with a low dopant concentration (or a region that is not doped with a dopant) may exist. In this case, the substrate (100) may be substantially an electrical insulator.

[109] The isotope electrode sheet (10) of FIG. 1 can be formed by stacking multiple isotope electrode sheets (10) onto the same semiconductor dies.

[110] As illustrated in FIG. 1, each of the isotope electrode sheets (10) may include an upper electrode (132) and a lower electrode (152) in the first doped layer (110). Each of the isotope electrode sheets (10) may include an upper electrode (134) and a lower electrode (154) in the second doped layer (120). The upper electrodes (132, 134) may each include an electrode on the first main surface of the substrate (100). The lower electrodes (152, 154) may be such that the first lower electrode (152) is in electrical contact with the first doped layer (110), and the second lower electrode (154) is in electrical contact with the second doped layer (120).

[111] Each of the isotope electrode sheets (10) illustrated in FIG. 1 may include a second upper electrode (134) on the second doped layer (120) and a second lower electrode (154) on the lower side of the second doped layer (120). The second upper electrode (134) may be in electrical contact with the second doped layer (120) at the first surface, and the second lower electrode (154) may be in electrical contact with the second doped layer (120) at the second surface.

[112] Each of the first upper electrode (132), the first lower electrode (152), the second upper electrode (134), and the second lower electrode (154) can be substantially used as a solder. Each of the first upper electrode (132), the first lower electrode (152), the second upper electrode (134), and the second lower electrode (154) is not particularly limited in type, size, shape, etc., as long as it has electrical properties without causing physical and chemical changes in the isotope electrode sheet (10). For example, each of the first upper electrode (132), the first lower electrode (152), the second upper electrode (134), and the second lower electrode (154) can be an electrical resistance film, a dielectric film, a motor film, or a third film. Additionally, each of the first upper electrode (132), the first lower electrode (152), the second upper electrode (134), and the second lower electrode (154) may have a bias form of the same configuration.

[113] In some embodiments, the second upper electrode (134) on the first surface may be a continuous solder including an opening, for example, arranged to surround the first doped layer (110), and the first upper electrode (132) may be disposed through the opening. Similarly, on the second surface, the second lower electrode (154) may be a continuous solder including an opening, for example, arranged to surround the first doped layer (110), and the first lower electrode (152) may be disposed through the opening.

[114] Each of the first upper electrode (132), the first lower electrode (152), the second upper electrode (134), and the second lower electrode (154) of FIG. 1 may include a metal material such as Ag, platinum (Pt), stainless steel, copper (Cu), aluminum (Al), nickel (Ni), or titanium (Ti), or may include a transparent oxide such as fluorine (F)-doped tin oxide (FTO) or indium tin oxide (ITO, In2O3), or may include carbon nanotubes, graphene, or graphene oxide and carbon-based compounds.

[115] The above radiation source (200) may include a radioactive isotope. Radioisotopes are not specifically restricted to emitting beta rays by radiation, and include tritium (³H, tritium), calcium-45 (⁴⁵Ca), nickel-63 (⁶³Ni), copper-67 (⁶⁷Cu), strontium-90 (⁹⁰Sr), promethium-147 (¹⁴⁷Pm), osmium-194 (¹⁹⁴Os), thulium-171 (¹⁷¹Tm), tantalum-182 (¹⁸²Ta), iridium-192 (¹⁹²Ir), cadmium-109 (¹⁰⁹Cd), germanium-75 (⁷⁵Ge), cerium-141 (¹⁴¹Ce), cerium-144 (¹⁴⁴Ce), and It may include one or more selected from the group consisting of tungsten-185(¹⁸⁵W), etc. However, the present invention is not limited to these.

[116] In some embodiments, the radiation source (200) may include a radioactive isotope that emits alpha rays. For example, the radiation source (200) may be americium-241(²⁴¹Am), americium-243(²⁴³Am), polonium-209(²⁰⁹Po), polonium-210(²¹⁰Po), plutonium-238(²³⁸Pu), plutonium-239(²³⁹Pu), curium-242(²⁴²Cm), curium-244(²⁴⁴Cm), curium-245(²⁴⁵Cm), promethium-147(¹⁴⁷Pm), uranium-238(²³⁸U), It may include at least one selected from the group consisting of thorium-232(²³²Th), radium-226(²²⁶Ra), bismuth-210(²¹⁰Bi), neptunium-237(²³⁷Np), europium-152(¹⁵²Eu), francium-223(²²³Fr), astatine-210(²¹⁰At), protactinium-231(²³¹Pa), einsteinium-253(²⁵³Es), californium-252(²⁵²Cf), and berkelium-249(²⁴⁹Bk). However, the present invention is not limited to these.

[117] The radiation source (200) may be formed by any commonly used method. For example, the radiation source (200) may be formed by plating, vapor deposition, atomic layer deposition (ALD), and sol-gel method.

[118] In some embodiments, the radiation source (200) may be formed by plating. When the radiation source (200) is formed by plating, the radiation source (200) may be formed horizontally by electrolytic plating after forming a seed layer. Alternatively, the radiation source (200) may be formed by electroless plating.

[119] The first lower electrode (152) of the isotope electrode sheet (10) positioned at the top can be electrically connected to the first upper electrode (132) of the isotope electrode sheet (10) positioned below it. In some embodiments, the first upper electrode (132) of the isotope electrode sheet (10) positioned below the first lower electrode (152) of the isotope electrode sheets (10) can further include a solder layer and be connected by a connector (140).

[120] At this time, the connector (140) may include a conductive material. Accordingly, the conductive material may include, for example, one or more selected from the group consisting of tin (Sn), bismuth (Bi), antimony (Sb), copper (Cu), silver (Ag), zinc (Zn), and lead (Pb). The number, spacing, arrangement, shape, etc. of the connectors (140) are not limited to those illustrated and may be changed according to the embodiment. Referring to FIG. 1, the connector (140) may have a solder ball or solder bump shape.

[121] In some embodiments, the space between two vertically adjacent isotope electrode sheets (10) may be filled with an insulator (160). The insulating layer (160) is not particularly limited as long as it is a material having electrical insulating properties, but may include, for example, one or more selected from the group consisting of silicate (e.g., TEOS), silicon nitride (SiN), hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, and aluminum oxide.

[122] The isotope battery (1) illustrated in Fig. 1 can be obtained by manufacturing individual isotope battery sheets (10) and then stacking them. By manufacturing individual isotope battery sheets (10) and then stacking them, only defective isotope battery sheets (10) can be selected and excluded from the stacking process, so that the manufacturing yield of the isotope battery (1) can be increased and the manufacturing cost can be reduced.

[123] The plurality of isotope electrode sheets (10) can be housed within a housing (190). In addition, the plurality of isotope electrode sheets (10) can be electrically connected to an external load by a conductor that passes through the housing (190) and is drawn outward.

[124] In some embodiments, the housing (190) may further include an electromagnetic interference (EMI) shield (not shown) capable of shielding electromagnetic waves. The EMI shield may be formed on at least a portion of the inner surface and / or the outer surface of the housing (190). The EMI shield may include, for example, a metal such as copper or aluminum, a conductive polymer such as polyaniline, or a magnetic material such as iron oxide. In addition, the EMI shield may be provided in the form of a sheet, a mesh, a coating layer, a spray coating, a non-woven fabric, a tape, or a fabric layer. By faithfully providing the EMI shield in the housing (190), the electromagnetic compatibility (EMC) of the stacked isotope battery (1) can be secured.

[125] The first upper electrodes (132) of the isotope electrode sheet (10) arranged at the top of Fig. 1 may be electrically connected to each other and electrically connected to the first external electrode (15a) of the first polarity. In addition, the second lower electrode (132) of the isotope electrode sheet (10) arranged at the bottom of Fig. 1 may be electrically connected to the second external electrode (15b) of the second polarity. The first external electrode (15a) and the second external electrode (15b) may be exposed to the outside of the housing (190) so as to be connected to an external load.

[126] In some embodiments, the second lower electrodes (154) of the isotope electrode sheet (10) disposed at the bottom in FIG. 1 may be electrically connected to each other while surrounding the first lower electrode (152). In some embodiments, the second lower electrodes (154) may be connected to each other by a separate conductor (not shown) and may be connected to the second external electrode (15b) exposed to the outside of the housing (190). The exterior of the first external electrode (15a) and the second external electrode (15b) may be a pn junction for connection with an external load, for example, an electrical connection, a physical connection, or a combination thereof. In this case, the isotope battery according to the present invention may be used as an individual power source that transmits current to the outside through the external electrode (15a) and the external electrode (15b) after being connected to an external load.

[127] Referring to Fig. 5, the isotope battery (1a) is a cross-sectional view showing an external electrode (15).

[128] Referring to FIG. 5, the laminated isotope battery (1a) is formed by alternately laminating the first isotope electrode sheet (11) and the second isotope electrode sheet (12).

[129] The above first isotope electrode sheet (11) has the same configuration as the isotope electrode sheet (10) described with reference to FIG. 1, and thus a detailed description thereof is omitted.

[130] The second isotope electrode sheet (12) has the same components as the first isotope electrode sheet (11), but differs in that the conductivity type of the dopant is opposite. That is, if the first doping layer (110) of the first isotope electrode sheet (11) is doped with a p-type, the first doping layer (110) of the second isotope electrode sheet (12) may be doped with an n-type. Conversely, if the first doping layer (110) of the first isotope electrode sheet (11) is doped with an n-type, the first doping layer (110) of the second isotope electrode sheet (12) may be doped with a p-type.

[131] Likewise, if the second doping layer (120) of the first isotope electrode sheet (11) is doped with a p-type, the second doping layer (120) of the second isotope electrode sheet (12) may be doped with an n-type. Conversely, if the second doping layer (120) of the first isotope electrode sheet (11) is doped with an n-type, the second doping layer (120) of the second isotope electrode sheet (12) may be doped with a p-type.

[132] The stacked isotope battery (1a) illustrated in Fig. 5 can obtain higher voltage electric energy because it increases output compared to a single battery in response to a radiation source (200).

[133] Since the pn junctions are connected in series so that the total output voltage in Fig. 5 is the sum of the voltages formed at the individual pn junctions, the first external electrode (15a) and the second external electrode (15b) can exhibit a higher operating voltage than in the isotope cell (1) of Fig. 1.

[134] Figure 6 is a cross-sectional side view showing a layered isotope battery (1b) according to one embodiment of the present invention.

[135] The stacked isotope battery (1b) illustrated in Fig. 6 is identical to the stacked isotope battery (1) described with reference to Figs. 1 to 4. The plurality of isotope electrode sheets (10) are grounded by a bonding member (192) and the plurality of isotope electrode sheets (10) are mounted on a controller chip (300). Therefore, the following description will focus on these differences, and description of overlapping parts will be omitted.

[137] Referring to FIG. 6, the plurality of isotope electrode sheets (10) are mounted on a controller chip (300). In some embodiments, the controller chip (300) may include a power management integrated circuit (PMIC) that outputs electric energy generated from the plurality of isotope electrode sheets (10) to an external load at a predetermined power level.

[138] The above plurality of isotope electrode sheets (10) can be bonded by a bonding member (192). The bonding member (192) can include a thermosetting resin (epoxy molding compound, EMC) such as an epoxy resin.

[139] The above plurality of isotope electrode sheets (10) can be used as dummy electrodes by being electrically connected through first and second upper electrodes (132, 134) provided on the isotope battery sheet (10) at the bottom, as exemplarily illustrated in FIG. 6.

[140] The first upper electrode (132) and the second upper electrode (134) disposed at the bottom can be used as dummy electrodes. In some embodiments, at least one of the first upper electrode (132) and the second upper electrode (134) disposed at the top of the plurality of isotope electrode sheets (10) can have a portion of the same area as the bonding member (192) exposed. In the above embodiment, the first upper electrode (132) and the second upper electrode (134) disposed at the uppermost portion among the plurality of isotope electrode sheets (10) may be completely covered by the bonding member (192). In some embodiments, the first upper electrode (132) and the second upper electrode (134) may be omitted from the upper surface of the isotope electrode sheet (10) disposed at the uppermost portion among the plurality of isotope electrode sheets (10), and instead, the upper surface may be covered by a passivation layer or a bonding member (192), or the bonding member (192) among the passivation layers.

[141] The electrical energy generated from the plurality of isotope electrode sheets (10) can be supplied externally by the controller chip (300). In Fig. 6, the plurality of isotope electrode sheets (10) are illustrated as being mounted on top of the controller chip (300), but the present invention is not limited thereto.

[142] Figure 7 is a cross-sectional side view showing a layered isotope battery (1c) according to another embodiment of the present invention.

[143] Referring to FIG. 7, the stacked isotope battery (1c) may include a plurality of isotope electrode sheets (10b) stacked in a vertical direction (V), i.e., in the thickness direction of the substrate (100).

[144] The above isotope electrode sheet (10b) is different from the isotope electrode sheet (10) of Fig. 1 in that the lower electrodes (152, 154) and the connector (140) are omitted. Therefore, the following description will focus on these differences, and the description of overlapping parts will be omitted.

[145] The above isotope electrode sheet (10b) includes a first upper electrode (132) and a second upper electrode (134) on the upper side. In some embodiments, the isotope electrode sheets (10b) of the plurality of stacked isotope electrode sheets (10b) may all be identical semiconductor dies.

[147] The first upper electrode (132) and the second upper electrode (134) of the isotope electrode sheet (10b) positioned at the bottom can be in direct contact with the bottom surfaces of the first doping layer (110) and the second doping layer (120), respectively, of the isotope electrode sheet (10b) positioned thereon. In other words, on each isotope battery sheet (10b), the first upper electrode (132) and the second upper electrode (134) are provided only on the first surface, which is the upper main surface, and the second surface, which is the lower main surface, can be in electrical contact with the first upper electrode (132) and the second upper electrode (134) of the isotope battery sheet (10b) positioned directly below it.

[148] The stacked isotope battery (1c) described above can be configured more compactly since the lower electrodes (152, 154) and the connector (140) are omitted, thereby increasing the energy density. Optionally, the first doping layers (110) of the isotope battery sheet (10b) and the second doping layers (120) of the adjacent isotope battery sheet (10b) can be arranged to be in direct contact with each other. In this case, the electrodes between the adjacent isotope battery sheets within the stack can be omitted.

[149] FIG. 8a is a cross-sectional side view showing a layered isotope battery (1d) according to another embodiment of the present invention.

[150] Referring to Fig. 8a, the stacked isotope battery (1d) may include a plurality of stacked isotope electrode sheets (10c). Fig. 8b is a plan view of a cell sheet of the isotope battery of Fig. 8a. Fig. 8c is a cross-sectional view taken along line XX of Fig. 8b.

[151] The cell sheet (10c) illustrated in FIGS. 8A to 8C differs from that illustrated in FIG. 1 primarily in the structure of the cavity (105). As exemplarily illustrated in FIG. 8A, the cavity (105) may have a recessed shape with a step. The cavity (105) may include a recess or trench (103) formed in the first surface (or upper main surface) of the substrate (100). In addition, one or more through-holes (101) may extend between the bottom of the trench (103) and the second surface (or lower main surface) of the substrate (100).

[152] The above isotope electrode sheet (10c) may include a trench (103) extending along the upper surface of the substrate (100) and a through-hole (101) extending from the bottom surface of the trench (103) to the lower surface of the substrate (100). As exemplarily illustrated in FIG. 8b, the trench (103) may extend in a first direction (R1), and the through-hole (101) may extend vertically from the bottom surface of the trench (103). In some embodiments, a plurality of through-holes (101) may be arranged along the first direction (R1) for one trench (103), as illustrated in FIGS. 8b and 8c.

[153] A radiation source (200) may be provided inside the trench (103) and the plurality of through-holes (101). The radiation source (200) may include a first portion (210) extending in a longitudinal direction, which is a first direction (R1) of the trench (103), inside the trench (103), and may be disposed inside the trench (103). In addition, the radiation source (200) may include a second portion (220) extending from inside the through-hole (101) to a lower surface of the substrate (100).

[154] A lateral outer surface (230) of the first portion (210) may be formed on a side surface of the first portion (210) facing a side surface of the second portion (220). Here, a second direction (R1) perpendicular to the width direction (R1) of the trench (103) may be such that the width dimension of the first portion (210) and the corresponding first doped layer (110) may be greater than the width dimension of the second portion (220) and the corresponding first doped layer (110).

[155] The above first doping layer (110) can be exposed to the outside from the surface of the radiation source (200).

[156] Figure 9 is a cross-sectional side view showing an isotope battery (1e) according to one embodiment of the present invention.

[157] The isotope cell (1e) of FIG. 9 is different from the isotope cell (1) shown in FIG. 1 in that it further includes a photon generation layer (250) at the location of the radiation source (200). The following description focuses on these differences, and redundant descriptions are omitted.

[158] Referring to FIG. 9, the photon generation layer (250) may be a scintillator material that can emit light (photons) by emitting radiation particles emitted from the radiation source (200). In some embodiments, the scintillator material is a combination of alpha ray emission from the radiation source (200) and the material thereof. Since such material has been described with reference to FIG. 1, a detailed description thereof will be omitted here.

[159] For example, the photon generation layer (250) may be provided as a product such as BaCa(BO₃)₂, BaHfO₃, BaB₄O₇, BaF₂, CsI:Tl, LuLaCl₆:Ce, K₂YF₅, Y₂Ce₂O₇, etc., but is not limited thereto. Various examples of the photon generation layer (250) are disclosed at https: / / scintillator.lbl.gov / organic-scintillator-library / .

[160] The photon generation layer (250) generates alpha rays and radiation electrons emitted from the radiation source (200), and the photons generated in the semiconductor layer (250) can be incident on the junction region between the first doped layer (110) and the second doped layer (120), and electrical energy can be generated by the photons.

[161] Fig. 10a is a side cross-sectional view showing an isotope battery (1f) according to another embodiment of the present invention. Fig. 10b is an enlarged view showing the first doping layer (110), the radiation source (200), and the insulating layer (162) of the isotope battery (1f). The isotope battery (1f) shown in Figs. 10a and 10b differs from the isotope battery (1) shown in Fig. 1 in that the radiation source (200) is arranged annularly around the center, and the following description will focus on this difference.

[162] Referring to FIGS. 10A and 10B, the radiation source (200) may have a hollow tube shape. In some embodiments, the hollow central portion of the radiation source (200) may be filled with an insulating layer (162). In some other embodiments, the central portion may be filled with a substrate (100) or a more flexible composite layer. The radiation source (200) may extend along the side surface of the first doped layer (110) while having a substantially uniform thickness.

[163] Since a concave groove is formed on the upper surface (162) of the radiation source (200), the emission efficiency of radiation particles is improved. When the groove is formed in the radiation source, the ratio of the hollow area increases without increasing the size of the radiation source. A radiation source (200) with a uniform thickness can be formed over the entire peripheral surface of the radiation source.

[164] Fig. 11 is a cross-sectional side view showing an isotope battery (1g) according to another embodiment of the present invention. The isotope battery (1g) shown in Fig. 11 differs from the isotope battery (1) shown in Fig. 1 in that the external electrodes (15a, 15b) are divided into multiple sections, and the following description will focus on these differences.

[165] Referring to FIG. 11, the isotope battery (1g) includes a first external electrode (15a) and a second external electrode (15b) to supply power to an external load.

[166] The first external electrode (15a) includes a conductor (15h) extending within the solder ball (164) to be connected to the first upper electrodes (132) of the isotope electrode sheet (10). The conductor (15h) can be directly connected to the first upper electrodes (132).

[167] In some embodiments, the conductor (15h) may include a first conductor (15v) and a second conductor (15h) extending in different directions within the electrode (15h). The second conductor (15v) may electrically connect the first conductor (15h) and the first upper electrode (132). The first conductor (15h) may be electrically connected to and extend separately from the external electrode (15a), and in some embodiments, the first conductor (15h) may extend in a horizontal direction and the second conductor (15v) may extend in a vertical direction, but the present invention is not limited thereto.

[168] In some embodiments, the second upper electrode (134) of the isotope electrode sheet (10) closest to the first external electrode (15a) may be omitted.

[169] The second external electrode (15b) may also be electrically connected to the isotope electrode sheets (10) in a similar manner to the first external electrode (15a). A person skilled in the art may envision an array connection between the second external electrode (15b) and the isotope electrode sheets (10) with reference to the arrangement structure between the first external electrode (15a) and the isotope electrode sheets (10) described above.

[170] Figures 12a to 12h are cross-sectional side views showing a method for manufacturing a layered isotope battery (1) according to one embodiment of the present invention.

[171] Referring to FIG. 12a, a substrate (100) is provided. The substrate (100) may include, for example, a material having an energy band gap of approximately 2.5 eV or more. Since the material of the substrate (100) has been described with reference to FIG. 1, a detailed description thereof will be omitted here.

[172] The above-described substrate (100) may be at least partially doped with a dopant. The doped region may be a dopant of an opposite conductivity type and may have a conductivity type opposite to that of the dopant included in the first doped layer (110m) to be described later.

[173] The dopant may be uniformly doped throughout the entire substrate (100), or may be partially doped to form a well. In some embodiments, there may be a region within the substrate (100) that is not doped with a specific conductive type. The conductive doped layer forms a second doped layer (120) to be formed later.

[174] Referring to FIG. 12b, a plurality of recesses (110r) can be formed in the above-described substrate (100).

[175] The above recess (110r) may be formed by patterning, for example, dry etching (D-RIE). However, the present invention is not limited thereto. The above recess (110r) may have the shape illustrated in FIG. 4a or may be a trench shape extending in the direction illustrated in FIG. 12b.

[176] As previously described, the entire substrate (100) may be doped with a specific conductive type. In this case, the side walls and bottom of the recess (110r) may constitute the second doped layer (120).

[177] Alternatively, the substrate (100) may be a region doped with a specific conductive type. In this case, the substrate (100) may be formed within the region, and the sidewalls and bottom of the recess (110r) formed within the region may constitute the second doped layer (120).

[178] In another embodiment, a larger recess, such as a groove, may be formed as a recess (110r), and then a second doped layer (120) may be formed by epitaxial growth on the substrate (100). A first conductive dopant may be doped on the substrate (100) during epitaxial growth.

[179] When forming a recess (110r), the groove can be formed by considering the thickness of the first doping layer (110) to be formed later, the ratio characteristics of the radiation source (200), etc.

[180] Referring to FIG. 12c, a first doping material layer (110m) can be formed with a predetermined thickness on the inside of the recess (110r) and the upper surface of the substrate (100).

[181] The first doped material layer (110m) may be formed by any known method. For example, the first doped material layer (110m) may be formed by a method such as epitaxy, physical vapor deposition (PVD), chemical vapor deposition (CVD), or atomic layer deposition (ALD). However, the present invention is not limited thereto. A person skilled in the art will be able to select an appropriate deposition method in consideration of the type of material to be processed, the characteristics of the precursor source, the required film thickness (step coverage), etc.

[182] The first doped material layer (110m) may be formed of the same material as the first doped layer (110) to be formed later, as described above. As described above, the first doped material layer (110m) may be doped with a conductive dopant of a desired semiconductor material. The second doped layer (120) and the first doped material layer (110m) may form a pn junction at least on the sidewall of the recess (110r).

[183] The first doping material layer (110m) may be conformally formed within the recess (110r). Here, the fact that the first doping material layer (110m) is conformally formed means that the first doping material layer (110m) is formed to conform to the shape of the surface of the substrate (100). That is, since the first doping material layer (110m) is formed with a substantially constant thickness, the shape of the outer surface of the first doping material layer (110m) may conform to the shape of the surface underneath. The recess (110r) may have an unfilled space even after the shape of the first doping material layer (110m) is formed.

[184] Referring to Fig. 12d, a radioactive material layer (200m) is formed in a portion as exemplified in the recess (110r). For example, the radioactive material layer (200) may be formed on the bottom surface of the recess (110r) so as to satisfy or further satisfy at least a portion of the unburied portion of the recess (110r). Although Fig. 12d illustrates that the unburied portion of the recess (110r) is completely filled by the radioactive material layer (200m), the present invention is not limited thereto.

[185] Optionally, a radioactive material layer (200m) may be formed on the first doping material layer (110m) and the surface. For example, the radioactive material layer (200m) may be formed uniformly or partially along the upper surface of the first doping material layer (110m).

[186] The above-mentioned radioactive material layer (200 m) may be formed by laminating a known material using a method such as PVD, CVD, or ALD. However, the present invention is not limited thereto. A person skilled in the art will be able to select an appropriate deposition method by considering the type of material to be processed, the characteristics of the precursor source, the required thickness, etc.

[187] The above-mentioned radioactive material layer (200 m) may be made of the same material as the radiation source (200) described above, and a detailed description thereof is omitted here.

[188] The above-mentioned radiation material layer (200m) can fill the space in the recess (110r) that is not filled by the first doping material layer (110m).

[189] Referring to FIG. 12e, the radioactive material layer (200m) and the first doping material layer (110m) are partially removed so as to be exposed on the upper surface of the substrate (100).

[190] In some embodiments, the portion formed on the upper surface of the substrate (100) of the radioactive material layer (200m) and the first doping material layer (110m) can be removed.

[191] The above radiation material layer (200 m) and the first doped material layer (110 m) can be partially removed and planarized by dry etching, wet etching, and / or chemical mechanical polishing (CMP).

[192] Referring to FIG. 12f, the lower portion of the substrate (100) may be supported. The lower surface of the substrate (100) may be removed until the lower surface of the radioactive material layer (200) is exposed.

[193] The lower portion of the substrate (100) may be partially removed and planarized by etching, wet etching, and / or CMP. As the lower surface of the substrate (100) is removed, the lower portions of the first doped material layer (110m) and the radioactive material layer (200m) may be partially removed. By removing the lower portion of the substrate (100), the radiation source (200) is allowed to penetrate the substrate (100).

[194] FIG. 12g shows that a first doping layer (110) and a second doping layer (120) are formed from the bottom surface of the above-described substrate (100).

[195] Referring to FIG. 12g, in order to form an isotope electrode sheet (10), a first upper electrode (132) and a first lower electrode (152) are formed on the upper side of the first doping layer (110), and a second upper electrode (134) and a second lower electrode (154) are formed on the upper side of the second doping layer (120).

[196] The above first, second, and lower electrodes (152, 132, 154, 134) can be partially formed through plating. Some of the electrodes (132, 152, 134, 154) can be formed as needed.

[197] Referring to FIG. 12h, the isotope electrode sheets (10) can be laminated to form a semiconductor. The laminated isotope electrode sheets (10) can be electrically connected to each other by a connector (140).

[198] In some embodiments, a connector (160) may be provided on the lower surface of the two isotope electrode sheets (10). The location where the insulating film (160) is added has been described with reference to FIG. 1, so a detailed description thereof is omitted here.

[199] Afterwards, by electrically connecting the multiple stacked isotope electrode sheets (10) and housing them in a housing (190), a stacked isotope battery (1) as shown in FIG. 1 can be obtained.

[200] Fig. 13 is a cross-sectional side view showing a laminated capacitor (2) according to one embodiment of the present invention.

[201] The laminated capacitor (2) illustrated in Fig. 13 is different from the laminated isotope battery (1) described with reference to Fig. 1 in that the second doping layer is non-conductive.

[202] Referring to Fig. 13, the side of the radiation source (200) is surrounded by a first region (111) of the first conductive type. Since the first region (111) is substantially the same as the first doping layer (110) described with reference to Fig. 1, a detailed description thereof is omitted here.

[203] The first region (111) may be surrounded by a second region (121). The second region (121) is substantially the same as the undoped region (109) described with reference to FIGS. 2A and 2B. That is, the second region (121) may be a region of the substrate (100) that is not doped with a dopant or has a dopant concentration below a predetermined concentration.

[204] The first region (111) and the second region (121) may be in contact with each other with an interface therebetween. In some embodiments, the first region (111) and the second region (121) may form a homojunction.

[205] The radiation source (200), the first region (111), and the second region (121) can be formed as a single substrate. That is, by radiation emitted from the radiation source (200), an EHP is formed at the interface between the first region (111) and the second region (121), thereby forming a single unit capacitor.

[206] Although the embodiments of the present invention have been described in detail above, those skilled in the art will appreciate that various modifications and variations can be made to the present invention without departing from the spirit and scope of the invention as defined herein. Therefore, the embodiments disclosed in this specification are intended to illustrate, rather than limit, the scope of the present invention, and the scope of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the claims below, and all technical ideas within a scope equivalent thereto should be construed as being included in the scope of the present invention.

[207] Modifications and variations are possible by modifying the 7-chi. Therefore, the embodiments disclosed in this specification are not intended to limit the technical concept of the present invention, but rather to illustrate it. The scope of the technical concept of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical concepts within the scope equivalent thereto should be interpreted as being included within the scope of the present invention.

Claims

Scope of claims

1. a plurality of stacked isotope electrode sheets; and A first external electrode of a first polarity and a second external electrode of a second polarity electrically connected to the plurality of isotope electrode sheets so as to transmit electric energy generated from the plurality of stacked isotope electrode sheets to an external load; Including, Each of the above multiple isotope electrode sheets: A substrate having the chemical formula of AMO3 (wherein A is at least one selected from the group consisting of La, Ba, Sr, and K, and M is at least one selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr); and A radiation source extending in the thickness direction of the above-described material; Including, The above description relates to a layered isotope battery including a first doped layer doped with a first conductive type dopant and a second doped layer doped with a second conductive type dopant.

2. In the first paragraph, The above description is for BaSnO3, BaHfO3, BaZrO3, BaHf1-xTi₄O3 (wherein 0 <x<1), Ba₁-xLaxSnO3(여기서 0<x<1), Bi4Ge3O12, Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn1-xGa₄O3(여기서 0<x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2Ox 및 LaAlO3로 구성되는 군으로부터 선택된 1종 이상을 주성분으로 하는 것을 특징으로 하는 적층형 동위원소 전지.

3. In the first paragraph, The above description is a layered isotope battery characterized by having BaSnO3 as a main component.

4. In the first paragraph, A layered isotope battery characterized in that the first doping layer and the second doping layer form a homojunction.

5. In the first paragraph, The above radiation source is placed within a through hole penetrating the above material, A layered isotope cell, characterized in that the first doping layer is arranged to surround a side surface of the radiation source, and the second doping layer is arranged to surround a side surface of the first doping layer.

6. In the first paragraph, A layered isotope cell characterized in that the radiation source is positioned within a slit penetrating the substrate.

7. In paragraph 6, A layered isotope cell characterized in that the above-mentioned device includes a plurality of slits, and the radiation source is provided inside each of the plurality of slits.

8. In paragraph 6, A layered isotope cell characterized in that the first doping layer extends to face the elongated side of the radiation source, and the second doping layer is arranged to extend along the side opposite to the first doping layer.

9. In the first paragraph, A laminated isotope battery characterized in that the plurality of laminated isotope electrode sheets are identical dies.

10. In the first paragraph, An isotope battery characterized in that the plurality of stacked isotope electrode sheets are electrically connected to each other by solder.

11. In the first paragraph, A laminated isotope battery characterized in that it further includes a controller chip provided on one side of the plurality of laminated isotope electrode sheets and capable of controlling the emission of electric energy generated from the plurality of isotope electrode sheets.

12. In Article 11, A laminated isotope battery characterized in that the above laminated plurality of isotope electrode sheets are bonded by a bonding resin.

13. In Article 12, A laminated isotope battery characterized in that at least one dummy electrode is exposed through the bonding resin.

14. In the first paragraph, A laminated isotope battery, wherein each of the plurality of isotope electrode sheets includes a first electrode portion provided on the first doping layer and a second electrode portion provided on the second doping layer, and the first electrode portion and the second electrode portion of one isotope electrode sheet are in direct electrical contact with the electrode portion of an isotope electrode sheet arranged in another layer.

15. In the first paragraph, The above radiation source is a first portion provided within a trench extending along one surface of the above-described substrate; and A second portion provided within a through hole extending from the bottom surface of the trench to the other surface of the substrate; A layered isotope battery characterized by including:

16. In Article 15, A laminated isotope battery, characterized in that the width dimension of the first portion is larger than the width dimension of the second portion.

17. In Article 15, A layered isotope battery, characterized in that the widthwise dimension of the first portion and the corresponding first doping layer is larger than the widthwise dimension of the second portion and the corresponding second doping layer.

18. a plurality of stacked isotope electrode sheets; and A first external electrode of a first polarity and a second external electrode of a second polarity electrically connected to the plurality of isotope electrode sheets so as to transmit electrical energy generated from the plurality of stacked isotope electrode sheets to an external load; Including, Each of the above multiple isotope electrode sheets: A substrate having the chemical formula of AMO3 (wherein A is at least one selected from the group consisting of La, Ba, Sr, and K, and M is at least one selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr); and A radiation source extending in the thickness direction of the above-described material; Including, The above description is a laminated capacitor including a first region doped with a first conductive type dopant and a second region not doped with a dopant.

19. In paragraph 18, A laminated capacitor characterized in that the first region and the second region form a homojunction.

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