Display panel, light-emitting device, and display apparatus

Abstract

Embodiments of the present disclosure relate to the technical field of display, and provide a display panel, a light-emitting device, and a display apparatus, for use in improving the light output efficiency of the light-emitting device. The display panel comprises a substrate, an isolation structure, and light-emitting devices. The isolation structure defines a plurality of pixel openings. The pixel openings are provided with the light-emitting devices. Each light-emitting device comprises a first electrode, a light-emitting functional layer, and a second electrode which are stacked in a direction moving away from the substrate, wherein the first electrode comprises a first sub-layer and a second sub-layer which are stacked in the direction moving away from the substrate. There is a first distance between the surface of a first light-emitting layer of a first light-emitting device close to the substrate and the surface of a first electrode of the first light-emitting device close to the substrate. There is a second distance between the surface of a second light-emitting layer of a second light-emitting device close to the substrate and the surface of a first electrode of the second light-emitting device close to the substrate. The ratio of the first distance to the second distance ranges from 1.0 to 1.5. The display panel is used for displaying an image.

Description

Display panels, light-emitting devices and display devices Technical Field

[0001] This disclosure relates to the field of display technology, and in particular to a display panel, a light-emitting device, and a display apparatus. Background Technology

[0002] OLED (Organic Light Emitting Diode) display panels are widely used in display screens for mobile phones, tablets, automotive displays, etc. due to their advantages such as being all-solid-state, having fast response speed, and having a wide operating temperature range.

[0003] Summary of the Invention

[0004] On one hand, a display panel is provided. The display panel includes a substrate, an isolation structure, and light-emitting devices. The isolation structure is disposed on the substrate and defines a plurality of pixel openings. Light-emitting devices are disposed in the pixel openings. Each light-emitting device includes a first electrode, a light-emitting functional layer, and a second electrode stacked in a direction away from the substrate. The first electrode includes a first sub-layer and a second sub-layer stacked in a direction away from the substrate. The light-emitting functional layer includes a first light-emitting layer and a second light-emitting layer stacked in a direction away from the substrate. The light-emitting devices include a first light-emitting device and a second light-emitting device, wherein the second sub-layer of the first light-emitting device and the second sub-layer of the second light-emitting device have different thicknesses. The first light-emitting layer of the first light-emitting device is close to the surface of the substrate and has a first distance between it and the surface of the first electrode of the first light-emitting device close to the substrate. The second light-emitting layer of the second light-emitting device is close to the surface of the substrate and has a second distance between it and the surface of the first electrode of the second light-emitting device close to the substrate. The ratio of the first distance to the second distance ranges from 1.0 to 1.5.

[0005] In some embodiments, the first light-emitting layer emits a first color, the second light-emitting layer emits a second color, and the wavelength of the first color light is greater than the wavelength of the second color light. The light-emitting functional layer further includes a third light-emitting layer located on the side of the first light-emitting layer closest to the substrate. The third light-emitting layer emits a third color, and the wavelength of the second color light is greater than the wavelength of the third color light. The light-emitting device further includes a third light-emitting device, wherein the thicknesses of the second sublayers in the first light-emitting device, the second sublayers in the second light-emitting device, and the second sublayers in the third light-emitting device are all different. The surface of the third light-emitting device closest to the substrate has a third distance from the surface of the first electrode of the third light-emitting device closest to the substrate. The ratio of the second distance to the third distance ranges from 0.8 to 1.2.

[0006] In some embodiments, the ratio of the first distance to the third distance ranges from 1.0 to 1.5.

[0007] In some embodiments, a fourth distance exists between the surface of the second electrode layer near the substrate and the surface of the third light-emitting layer near the substrate. A fifth distance exists between the surface of the second electrode layer near the substrate and the surface of the first light-emitting layer near the substrate. The ratio of the fourth distance to the fifth distance ranges from 1.8 to 2.2.

[0008] In some embodiments, the second sub-layer of the first electrode includes a microcavity adjustment layer and a transparent conductive layer. The microcavity adjustment layer is located between the first sub-layer of the first electrode and the transparent conductive layer, and the transparent conductive layer is electrically connected to the first sub-layer. The thicknesses of the microcavity adjustment layers in the first light-emitting device, the second light-emitting device, and the third light-emitting device are all different.

[0009] In some embodiments, the material of the microcavity conditioning layer includes a conductive material.

[0010] In some embodiments, the material of the microcavity conditioning layer includes an insulating material. Within the same first electrode, a transparent conductive layer covers the sides of the microcavity conditioning layer and is in contact with and electrically connected to the edge of the first sublayer.

[0011] In some embodiments, the thickness of the microcavity adjustment layer of the first light-emitting device is greater than the thickness of the microcavity adjustment layer of the second light-emitting device. The thickness of the microcavity adjustment layer of the third light-emitting device is greater than the thickness of the microcavity adjustment layer of the second light-emitting device.

[0012] In some embodiments, the thickness range of the microcavity adjustment layer of the first light-emitting device is [missing information]. The thickness range of the microcavity adjustment layer of the second light-emitting device is: The thickness range of the microcavity tuning layer of the third light-emitting device is:

[0013] In some embodiments, the thickness of the light-emitting functional layer ranges from 100 to 100.

[0014] In some embodiments, the transmittance of the transparent conductive layer to light within a preset wavelength range is greater than or equal to 90%, and the preset wavelength range is 440nm to 660nm.

[0015] In some embodiments, the transmittance of the second electrode layer to light within a preset wavelength band is greater than or equal to 40% and less than or equal to 70%. And / or, the reflectivity of the second electrode layer is greater than or equal to 30% and less than or equal to 60%.

[0016] In some embodiments, the material of the first light-emitting layer includes a first host material. The material of the second light-emitting layer includes a first excimer complex. The first excimer complex includes a second host material and a third host material, wherein the second host material is a hole-type material. The absolute value of the difference between the highest occupied molecular orbital energy levels of the first host material and the second host material is less than or equal to 0.3 eV.

[0017] In some embodiments, the hole mobility of the material of the first light-emitting layer is greater than that of the material of the second light-emitting layer.

[0018] In some embodiments, the ratio of hole mobility to electron mobility of the material of the second light-emitting layer ranges from 0.01 to 100.

[0019] In some embodiments, the material of the first light-emitting layer includes a first doped material. The material of the second light-emitting layer includes a second doped material. The material of the third light-emitting layer includes a third doped material. The peak wavelength range of the photoluminescence spectrum of the first doped material is 600 nm to 650 nm; and / or, the peak wavelength range of the photoluminescence spectrum of the second doped material is 500 nm to 540 nm; and / or, the peak wavelength range of the photoluminescence spectrum of the third doped material is 440 nm to 490 nm.

[0020] In some embodiments, the material of the first light-emitting layer includes a first doped material. The material of the second light-emitting layer includes a second doped material. The material of the third light-emitting layer includes a third doped material. The peak wavelength range of the electroluminescence spectrum of the first light-emitting device is 600 nm to 650 nm; and / or, the peak wavelength range of the electroluminescence spectrum of the second light-emitting device is 500 nm to 540 nm; and / or, the peak wavelength range of the electroluminescence spectrum of the third light-emitting device is 440 nm to 490 nm.

[0021] In some embodiments, the isolation structure includes a pixel defining layer and a partition layer. The pixel defining layer defines a plurality of first sub-openings. The partition layer is stacked on top of the pixel defining layer and defines a plurality of second sub-openings; each second sub-opening and a first sub-opening intersect to form a pixel opening. The partition layer includes first and second sub-partition layers stacked in a direction away from the substrate. The second sub-partition layer includes an edge portion extending relative to the first sub-partition layer in a direction closer to the centerline of the adjacent pixel opening.

[0022] In some embodiments, the partition layer is located between the pixel defining layer and the first electrode layer. The edge portion has a size ranging from 0.4 μm to 1 μm along a second direction, which is parallel to the substrate and extends from any point on the edge portion to the center line of the adjacent pixel opening.

[0023] In some embodiments, the thickness of the first sub-partition layer ranges from 1 μm to 4 μm.

[0024] In some embodiments, the isolation structure includes a pixel defining layer and a partition layer. The pixel defining layer defines a plurality of first sub-openings. The partition layer is stacked on the side of the pixel defining layer away from the substrate and defines a plurality of second sub-openings. Each second sub-opening and a first sub-opening intersect to form a pixel opening. The partition layer has a first cross-section that is trapezoidal, wherein the dimension of the side of the trapezoid away from the substrate is larger than the dimension of the side closer to the substrate; the first cross-section is perpendicular to the substrate and runs along the line connecting the centers of two adjacent pixel openings.

[0025] In some embodiments, in the first cross section, the angle between the side of the partition layer and the surface of the pixel defining layer near the partition layer ranges from 30° to 80°.

[0026] In some embodiments, the thickness of the partition layer ranges from 1 μm to 2 μm.

[0027] In some embodiments, the display panel further includes a first insulating layer and a second insulating layer disposed between the first electrode layer and the substrate, wherein the first insulating layer is closer to the substrate than the second insulating layer. The isolation structure includes a pixel defining layer and a plurality of isolation trenches. The pixel defining layer defines a plurality of pixel openings. The plurality of isolation trenches penetrate the pixel defining layer and the second insulating layer, and extend through the first insulating layer; the isolation trenches are located between any two adjacent pixel openings. In the isolation trenches, the second insulating layer includes an edge portion that extends away from the adjacent pixel opening relative to the first insulating layer.

[0028] In some embodiments, along the first direction, the distance between the surface of the edge portion close to the bottom surface of the isolation trench and the bottom surface of the isolation trench ranges from 0.2 μm to 1 μm.

[0029] In some embodiments, the edge portion has a size ranging from 0.3 μm to 0.8 μm along a third direction, which is parallel to the substrate and perpendicular to the extension direction of the edge portion.

[0030] In some embodiments, the light-emitting device further includes a first charge-generating layer and a second charge-generating layer in contact, wherein the first charge-generating layer is closer to the substrate than the second charge-generating layer. A third light-emitting layer is located between the first charge-generating layer and the substrate, and the first and second light-emitting layers are located between the second charge-generating layer and the second electrode layer. A sixth distance is maintained between the surface of the second charge-generating layer near the substrate and the surface of the third light-emitting layer near the substrate. A seventh distance is maintained between the surface of the second charge-generating layer near the substrate and the surface of the second light-emitting layer away from the substrate. The ratio of the sixth distance to the seventh distance ranges from 0.5 to 0.8.

[0031] In some embodiments, the material of the first charge generation layer includes a fifth host material and a fourth doped material. The mass percentage of the fourth doped material in the first charge generation layer is less than the mass percentage of the fifth host material. The fifth host material is selected from any of the structures shown in general formula (III).

[0032] Among them, X3, X4, X5, and X6 may be the same or different, and are independently selected from C(R). d Ar5, Ar6, Ar7, and Ar8 are either hydrogen, deuterium, tritium, halogen, cyano, nitro, substituted or unsubstituted C6–C60 aryl, substituted or unsubstituted C3–C60 alicyclic, substituted or unsubstituted C6–C60 aromatic fused ring, substituted or unsubstituted C1–C50 alkyl, substituted or unsubstituted C2–C20 alkenyl, substituted or unsubstituted C2–C20 alkynyl, or substituted or unsubstituted C2–C20 alkynyl. The substituted or unsubstituted C1-C30 alkoxy group, the substituted or unsubstituted C6-C30 aryloxy group, the substituted or unsubstituted C3-C60 alkylsilyl group, the substituted or unsubstituted C18-C60 arylsilyl group, the substituted or unsubstituted C8-C60 alkylarylsilyl group, and the substituted or unsubstituted C2-C60 heterocyclic group; and the heterocyclic group comprises at least one of O, N, S, Si, and P. R d It is selected from hydrogen, deuterium, substituted or unsubstituted C1-C60 alkyl, substituted or unsubstituted C2-C60 alkenyl, substituted or unsubstituted C2-C60 alkynyl, substituted or unsubstituted C1-C60 alkoxy, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C1-C10 heterocyclic alkyl, substituted or unsubstituted C3-C10 cycloalkenyl, substituted or unsubstituted C1-C10 heterocyclic alkenyl, substituted or unsubstituted C6-C60 aryl, substituted or unsubstituted C6-C60 aryloxy, substituted or unsubstituted C6-C60 arylthio, substituted or unsubstituted C1-C60 heteroaryl, substituted or unsubstituted monovalent nonaromatic condensed polycyclic group and substituted or unsubstituted monovalent nonaromatic condensed heteropolycyclic group.

[0033] In some embodiments, the fourth doping material includes one or any combination of alkali metals, alkaline earth metals, transition metals, alkali metal compounds, alkaline earth metal compounds, and transition metal compounds.

[0034] In some embodiments, the mass percentage of the fourth doped material in the material of the first charge generation layer is greater than or equal to 0.5% and less than or equal to 3%.

[0035] In some embodiments, the second electrode layer is a cathode layer, and the first electrode layer is an anode layer. The light-emitting device further includes a first electron transport functional layer and a first hole transport functional layer. The first electron transport functional layer is located between the second light-emitting layer and the second electrode layer. The first hole transport functional layer is located between the first light-emitting layer and the second charge-generating layer. The ratio of the thickness of the first electron transport functional layer to the sum of the thicknesses of the first hole transport functional layer and the second charge-generating layer ranges from 1.1 to 1.5.

[0036] In some embodiments, the light-emitting device further includes a second electron transport functional layer and a second hole transport functional layer. The second electron transport functional layer is located between the first charge generation layer and the third light-emitting layer. The second hole transport functional layer is located on the side of the third light-emitting layer away from the second electron transport functional layer. The first electron transport functional layer includes an electron injection layer, a first electron transport layer, and a first hole blocking layer stacked along a direction away from the second electrode layer. The first hole transport functional layer includes a first electron blocking layer and a first hole transport layer stacked along a direction away from the first light-emitting layer. The second electron transport functional layer includes a second electron transport layer and a second hole blocking layer stacked along a direction away from the first charge generation layer. The second hole transport functional layer includes a second electron blocking layer, a second hole transport layer, and a hole injection layer stacked along a direction away from the third light-emitting layer. The material of the third light-emitting layer includes a fourth host material and a third doped material, wherein the third doped material is a fluorescent material. The triplet energy level of the material of the second hole blocking layer is greater than the triplet energy level of the fourth host material; and / or, the triplet energy level of the material of the second electron blocking layer is greater than the triplet energy level of the fourth host material.

[0037] In some embodiments, the absolute value of the difference between the lowest unoccupied molecular orbital energy level of the material of the second hole blocking layer and the fourth host material is less than or equal to 0.3 eV; and / or, the absolute value of the difference between the highest occupied molecular orbital energy level of the material of the second electron blocking layer and the fourth host material is less than or equal to 0.3 eV.

[0038] In some embodiments, the absolute value of the difference between the highest occupied molecular orbital energy levels of the material of the second charge generation layer and the material of the first hole transport layer is less than or equal to 0.3 eV.

[0039] In some embodiments, the absolute value of the difference between the lowest unoccupied molecular orbital energy level of the material of the first charge generating layer and the material of the first hole blocking layer is less than or equal to 0.5 eV; and / or, the absolute value of the difference between the lowest unoccupied molecular orbital energy level of the material of the first charge generating layer and the material of the second hole blocking layer is less than or equal to 0.5 eV.

[0040] In some embodiments, the absolute value of the difference between the highest occupied molecular orbital energy levels of the materials of the first hole transport layer and the first electron blocking layer is greater than or equal to 0.1 eV and less than or equal to 0.4 eV; and / or, the absolute value of the difference between the highest occupied molecular orbital energy levels of the materials of the second hole transport layer and the second electron blocking layer is greater than or equal to 0.1 eV and less than or equal to 0.4 eV.

[0041] In some embodiments, the thickness of the second hole transport layer is less than the thickness of the first hole transport layer.

[0042] In some embodiments, the hole mobility of the material of the first hole transport layer is greater than the hole mobility of the material of the second hole transport layer.

[0043] In some embodiments, the hole mobility of the material of the second electron blocking layer is greater than or equal to the hole mobility of the material of the first electron blocking layer.

[0044] In some embodiments, the material of the second charge generation layer includes a sixth host material and a fifth doped material. The mass percentage of the fifth doped material in the material of the second charge generation layer is less than the mass percentage of the sixth host material in the material of the second charge generation layer; and / or, the material of the hole injection layer includes the sixth host material and the fifth doped material; the mass percentage of the fifth doped material in the material of the hole injection layer is less than the mass percentage of the sixth host material in the material of the hole injection layer. Wherein, the sixth host material is a hole-type material; the fifth doped material is configured to p-type dope the sixth host material.

[0045] In some embodiments, the fifth doped material is selected from any of the structures shown in the following general formula (I).

[0046] Wherein, A is any one of a three-membered ring, a four-membered ring, a five-membered ring, and a six-membered ring. R1, R2, R3, R4, R5, and R6 may be the same or different, and are independently selected from any one of a halogen, a cyano group, a substituted aryl group, and a substituted or unsubstituted heteroaryl group. Moreover, when R1, R2, R3, R4, R5, or R6 is a substituted aryl group, the substituent of the aryl group includes at least one electron-withdrawing group.

[0047] In some embodiments, at least one of R1, R2, R3, R4, R5, and R6 is a cyano group.

[0048] In some embodiments, the fifth doped material is selected from any of the structures shown in the following general formula (II).

[0049] Where X1 and X2 are the same or different, and are independently selected from C(R) a), N and Si(R) b Y1 and Y2 are either the same or different, and are independently selected from N(R). c Ar1, Ar2, Ar3, and Ar4 may be the same or different, and are independently selected from any one of halogen, cyano, substituted or unsubstituted phenyl, substituted or unsubstituted biphenyl, substituted or unsubstituted terphenyl, substituted or unsubstituted fluorenyl, substituted or unsubstituted adamantyl, and substituted or unsubstituted heteroaryl; or may be connected to adjacent groups to form substituted or unsubstituted rings. a R b and R c Whether identical or different, each is independently selected from hydrogen, deuterium, halogen, cyano, substituted or unsubstituted C3–C20 heteroaryl, substituted or unsubstituted C6–C20 aryl, substituted or unsubstituted C1–C5 alkyl, substituted or unsubstituted C1–C10 haloalkyl, substituted or unsubstituted C3–C10 cycloalkyl, substituted or unsubstituted C2–C10 heterocycloalkyl, substituted or unsubstituted C1–C10 alkoxy, substituted or unsubstituted C1–C10 alkylthio, substituted or unsubstituted C6–C18 aryloxy, substituted or unsubstituted C6–C18 arylthio, substituted or unsubstituted C6–C24 phosphoroxy, and substituted or unsubstituted C6–C18 alkylsulfonyl. m and n may be identical or different, each independently selected from 1, 2, 3, 4, and 5.

[0050] In some embodiments, the mass percentage of the fifth dopant in the material of the second charge generation layer is greater than or equal to 0.5% and less than or equal to 10%; and / or, the mass percentage of the fifth dopant in the material of the hole injection layer is greater than or equal to 0.5% and less than or equal to 10%.

[0051] On the other hand, a light-emitting device is provided. The light-emitting device includes a first light-emitting device and a second light-emitting device. Each of the first and second light-emitting devices includes a first electrode, a light-emitting functional layer, and a second electrode stacked sequentially. The first electrode includes a first sub-layer and a second sub-layer stacked along a direction close to the light-emitting functional layer. The second sub-layer in the first light-emitting device and the second light-emitting device have different thicknesses. The light-emitting functional layer includes a first light-emitting layer and a second light-emitting layer stacked along a direction away from the first electrode. The first light-emitting layer emits a first color, and the second light-emitting layer emits a second color. The wavelength of the first color light is greater than the wavelength of the second color light. The surface of the first light-emitting layer of the first light-emitting device close to the first electrode has a first distance from the surface of the first electrode of the first light-emitting device away from the light-emitting functional layer. The surface of the second light-emitting layer of the second light-emitting device close to the first electrode has a second distance from the surface of the first electrode of the second light-emitting device away from the light-emitting functional layer. The ratio of the first distance to the second distance ranges from 1.0 to 1.5.

[0052] In another aspect, a display device is provided. The display device includes a display panel and a circuit board as described in any of the above embodiments. The circuit board is electrically connected to the display panel. Attached Figure Description

[0053] To more clearly illustrate the technical solutions in this disclosure, the accompanying drawings used in some embodiments of this disclosure will be briefly described below. Obviously, the drawings described below are only drawings of some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams and are not intended to limit the actual size of the product, the actual flow of the method, the actual timing of the signals, etc. involved in the embodiments of this disclosure.

[0054] Figure 1 is a structural diagram of a display device according to some embodiments;

[0055] Figure 2A is a structural diagram of a display panel according to some embodiments;

[0056] Figure 2B is a structural diagram of a pixel driving circuit stack according to some embodiments;

[0057] Figure 2C is a circuit diagram of a pixel driving circuit according to some embodiments;

[0058] Figure 3 is a structural diagram of a light-emitting device according to some embodiments;

[0059] Figure 4 is a structural diagram of a display panel according to some other embodiments;

[0060] Figure 5A is a structural diagram of a display panel according to some other embodiments;

[0061] Figure 5B is a structural diagram of the partition layer according to some embodiments;

[0062] Figure 5C is a reference diagram of the state of the display panel during the vapor deposition process according to some embodiments;

[0063] Figure 6A is a structural diagram of a display panel according to some other embodiments;

[0064] Figure 6B is a structural diagram of an isolation structure according to some embodiments;

[0065] Figure 6C is a reference diagram of the state of the display panel during the vapor deposition process according to some other embodiments;

[0066] Figure 6D is an electron microscope image of a partition structure according to some embodiments;

[0067] Figure 7A is a structural diagram of a display panel according to some other embodiments;

[0068] Figure 7B is a structural diagram of a partition structure according to some other embodiments;

[0069] Figure 7C is a reference diagram of the state of the display panel during the vapor deposition process according to some other embodiments;

[0070] Figure 7D is an electron microscope image of the partition structure according to some other embodiments. Detailed Implementation

[0071] The technical solutions in some embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0072] Unless the context otherwise requires, throughout the specification and claims, the term "comprise" and its other forms, such as the third-person singular "comprises" and the present participle "comprising," are interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific example," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0073] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0074] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0075] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0076] In addition, the use of “based on” implies openness and inclusivity, because processes, steps, calculations or other actions “based on” one or more of the stated conditions or values ​​may in practice be based on additional conditions or values ​​beyond those stated.

[0077] As used herein, “about,” “approximately,” or “approximately” includes the stated value and the average value within an acceptable range of deviation from the given value, wherein the acceptable range of deviation is determined by a person skilled in the art taking into account the measurement under discussion and the error associated with the measurement of the given quantity (i.e., the limitations of the measurement system).

[0078] As used herein, “parallel,” “perpendicular,” and “equal” include the described situation and situations that are similar to the described situation, within an acceptable range of deviation, which is determined by those skilled in the art taking into account the measurement under discussion and the error associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, “parallel” includes absolute parallelism and approximate parallelism, where an acceptable range of deviation for approximate parallelism may be, for example, within 5°; “perpendicular” includes absolute perpendicularity and approximate perpendicularity, where an acceptable range of deviation for approximate perpendicularity may also be, for example, within 5°; “equal” includes absolute equality and approximate equality, where an acceptable range of deviation for approximate equality may be, for example, a difference between the two equals being less than or equal to 5% of either one.

[0079] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can mean that the layer or element is directly on the other layer or substrate, or that there is an intermediate layer between the layer or element and the other layer or substrate.

[0080] This document describes exemplary embodiments with reference to cross-sectional views and / or plan views, which are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are enlarged for clarity. Therefore, variations in shape relative to the drawings are contemplated due to, for example, manufacturing techniques and / or tolerances. Thus, exemplary embodiments should not be construed as being limited to the shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing processes. For example, etched areas shown as rectangular would typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of the areas of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0081] It should be noted that, for example, 11-1 in the accompanying drawings of this disclosure indicates that component 11 belongs to component 1; for example, 220-220G in Figure 2A indicates that the light-emitting functional pattern 220 belongs to the light-emitting functional layer 220G; other similar reference numerals in the drawings also follow the above description. For example, 1 / 2 in the accompanying drawings of this disclosure indicates that both component 1 and component 2 can refer to this component; for example, 320a / 320 in Figure 2A indicates that both the selected pixel driving circuit 320a and the pixel driving circuit stack 320 can be represented by this component. Other similar reference numerals in the drawings also follow the above description.

[0082] It should be noted that the thickness mentioned in the embodiments of this disclosure refers to the dimension along the first direction X. For example, the thickness of the light-emitting functional layer 220G refers to the dimension of the light-emitting functional layer 220G along the first direction X. Here, the first direction X is the thickness direction of the substrate 310. Other thicknesses appearing in the embodiments also follow the above description.

[0083] As shown in FIG1, some embodiments of the present disclosure provide a display device 400, which includes a display panel 300.

[0084] The aforementioned display device 400 can be, for example, an OLED (Organic Light Emitting Diode) display device. OLEDs are self-emissive, requiring no backlight, and are thin and lightweight. Furthermore, OLED display panels offer advantages such as wide viewing angles, high contrast, fast response times, wide operating temperature ranges, and flexibility. Among these, stacked OLED light-emitting devices play a crucial role in both OLED displays and lighting. OLED technology has been successfully applied in the commercial flat panel display and lighting industries.

[0085] As exemplarily shown in FIG1, the display device 400 further includes a circuit board 410. The circuit board 410 is electrically connected to the display panel 300. The circuit board 410 is used to input various signals required for displaying images to the display panel 300, such as control signals, power supply voltage signals, and data signals.

[0086] In addition, the display device 400 may also include an under-display camera and an under-display fingerprint sensor, enabling the display device 400 to perform various functions such as taking photos, recording videos, fingerprint recognition, or facial recognition.

[0087] The aforementioned display device 400 can be any display device that displays either moving (e.g., video) or stationary (e.g., still images), and whether it is text or images. More specifically, the display device 400 of the described embodiment is contemplated for implementation in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigators, cockpit controllers and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0088] In some embodiments, as shown in FIG2A, the display panel 300 includes a substrate 310.

[0089] For example, the material of the substrate 310 can be a rigid material, such as glass or metal, to realize a rigid substrate display; or the material of the substrate 310 can also be a flexible material, such as polyimide (PI), to realize a flexible substrate display.

[0090] For example, the material of substrate 310 may include inorganic materials, such as soda-lime glass, quartz glass, or sapphire glass. Alternatively, the material of substrate 310 may also include organic materials, such as one or any combination of polymethyl methacrylate, polyvinyl alcohol, polyvinylphenol, polyethersulfone, polyimide, polyamide, polyacetal, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate. Or, the material of substrate 310 may include both organic and inorganic materials.

[0091] In some embodiments, as shown in FIG2A, the display panel 300 includes a light-emitting device 200 and an isolation structure 100 disposed on a substrate 310. The isolation structure 100 defines a plurality of pixel openings Q. The pixel openings Q are provided with the light-emitting devices 200.

[0092] For example, multiple pixel openings Q can be arranged along a direction Y parallel to the plane where the substrate 310 is located.

[0093] When the isolation structure 100 includes a plurality of pixel openings Q, and a light-emitting device 200 is disposed in each pixel opening Q, the isolation structure 100 can be configured to define the pixel openings Q for forming the light-emitting device 200. In this way, the light emitted by the light-emitting device 200 can be emitted from a preset sub-pixel area of ​​the display panel 300, thus avoiding color crosstalk.

[0094] In some examples, as shown in FIG2A, the display panel 300 further includes a pixel driving circuit stack 320 disposed on the substrate 310. In this case, the isolation structure 100 and the light-emitting device 200 can be disposed on the side of the pixel driving circuit stack 320 away from the substrate 310. The pixel driving circuit stack 320 is formed with a plurality of pixel driving circuits 320a. The pixel driving circuits 320a are used to drive the light-emitting device 200 to emit light.

[0095] For example, as shown in Figures 2A and 2B, the display panel 300 includes a display area A and a peripheral area S disposed around the display area A. The pixel driving circuit stack 320 located in the display area A also includes multiple gate lines G and multiple data lines D, which intersect each other to define multiple sub-pixel areas Q' distributed in an array within the display area A. Each sub-pixel area Q' is provided with a pixel driving circuit 320a for driving the corresponding light-emitting device 200 to emit light. The gate lines G provide scan signals to the pixel driving circuit 320a. The data lines D provide data signals to the pixel driving circuit 320a.

[0096] For example, as shown in FIG2B, the peripheral area S is used to arrange the gate driving circuit 340 connected to the pixel driving circuit 320a. In FIG2B, SR1, SR2, and SR3 represent shift registers arranged sequentially, with multiple shift registers cascaded to form the gate driving circuit 340. In FIG2B, Iput represents the signal input terminal; the Iput terminal of the first-stage shift register SR1 receives the start signal STV. In FIG2B, Oput represents the signal output terminal, for example, outputting a scan signal to the corresponding pixel driving circuit 320a.

[0097] Exemplarily, the display panel 300 may also include a data driving circuit and / or a control circuit. The data driving circuit is used to provide a data signal to the data line D. The control circuit is configured to control the data driving circuit to apply the data signal and to control the gate driving circuit 340 to apply a scan signal. An example of this control circuit is a timing control circuit (T-con).

[0098] The control circuitry can take various forms, including, for example, a processor and memory. For instance, the processor can be a central processing unit (CPU) or other processing devices with data processing and / or instruction execution capabilities, such as a microprocessor or a programmable logic controller (PLC). The memory can include one or more computer program products, which can include various forms of computer-readable storage media, such as volatile memory and / or non-volatile memory. Volatile memory can include, for example, random access memory (RAM) and / or cache memory. Non-volatile memory can include, for example, read-only memory (ROM), hard disk, flash memory, etc. One or more computer program instructions can be stored on the computer-readable storage medium, and the processor can execute the functions expected by the program instructions. Various application programs and various data can also be stored in the computer-readable storage medium.

[0099] The following example illustrates a film layer configuration structure of a pixel driving circuit stack 320. It should be understood that some embodiments of this disclosure are not limited thereto.

[0100] For example, as shown in FIG2A, the pixel driving circuit stack 320 includes: a shielding layer 321, a first semiconductor layer 322, a first conductive layer 323, a second conductive layer 324, a second semiconductor layer 325, a third conductive layer 326, a fourth conductive layer 327, and a fifth conductive layer 328 stacked sequentially. For example, the material of the first semiconductor layer 322 includes low-temperature polycrystalline silicon. The material of the second semiconductor layer 325 includes indium gallium zinc oxide.

[0101] It should be noted that an insulating layer is also provided between the functional film layers of the pixel driving circuit stack 320. The functional film layers include: a shielding layer 321, a first semiconductor layer 322, a first conductive layer 323, a second conductive layer 324, a second semiconductor layer 325, a third conductive layer 326, a fourth conductive layer 327, and a fifth conductive layer 328.

[0102] For example, as shown in FIG2A, the insulating layer includes: a first insulating material layer 3201, a first gate dielectric layer 3202, a second gate dielectric layer 3203, a second insulating material layer 3204, a third gate dielectric layer 3205, a third insulating material layer 3206, a passivation layer 3207, a first planarization layer 3208, and a second planarization layer 3209.

[0103] In other words, the pixel driving circuit stack 320 may include, in sequence, a shielding layer 321, a first insulating material layer 3201, a first semiconductor layer 322, a first gate dielectric layer 3202, a first conductive layer 323, a second gate dielectric layer 3203, a second conductive layer 324, a second insulating material layer 3204, a second semiconductor layer 325, a third gate dielectric layer 3205, a third conductive layer 326, a third insulating material layer 3206, a fourth conductive layer 327, a passivation layer 3207, a first planarization layer 3208, a fifth conductive layer 328, and a second planarization layer 3209.

[0104] For example, the materials of the first planarization layer 3208 and the second planarization layer 3209 include polyimide, and the materials of the first insulating material layer 3201, the second insulating material layer 3204 and the third insulating material layer 3206 include either silicon nitride or silicon oxide.

[0105] For example, the pixel driving circuit 320a can be a 7T1C, 8T1C, or 9T1C circuit, where T represents a transistor, the number before T indicates the number of transistors, and C represents a capacitor, the number before C indicates the number of capacitors. For example, 7T1C represents 7 transistors and 1 capacitor. The following example illustrates a 7T1C pixel driving circuit 320a; it should be understood that some embodiments of this disclosure are not limited thereto.

[0106] As shown in Figure 2C, the pixel driving circuit 320a includes: a first reset transistor T1, a compensation transistor T2, a driving transistor T3, a data writing transistor T4, a first light-emitting control transistor T5, a second light-emitting control transistor T6, and a second reset transistor T7.

[0107] For example, as shown in FIG2C, the first reset transistor T1 includes a gate, a first terminal, and a second terminal. The gate of the first reset transistor T1 is electrically connected to the first reset signal line Reset1, the first terminal of the first reset transistor T1 is electrically connected to the first initialization signal line Vinit1, and the second terminal of the first reset transistor T1 is electrically connected to the third node N3. The first reset transistor T1 is configured to reset the gate of the driving transistor T3 in response to a reset signal received at the first reset signal line Reset1.

[0108] For example, as shown in FIG2C, the compensation transistor T2 includes a gate, a first terminal, and a second terminal. The gate of the compensation transistor T2 is electrically connected to the second scan signal line Gate2, the first terminal of the compensation transistor T2 is electrically connected to the first node N1, and the second terminal of the compensation transistor T2 is electrically connected to the third node N3. The compensation transistor T2 is configured to reset or perform threshold compensation on the driving transistor T3 in response to a scan signal received at the second scan signal line Gate2.

[0109] For example, as shown in FIG2C, the driving transistor T3 includes a gate, a first terminal, and a second terminal. The gate of the driving transistor T3 is electrically connected to a first node N1, the first terminal of the driving transistor T3 is electrically connected to a second node N2, and the second terminal of the driving transistor T3 is electrically connected to a third node N3. The driving transistor T3 is configured to generate a driving current signal.

[0110] For example, as shown in FIG2C, the data writing transistor T4 includes a gate, a first terminal, and a second terminal. The gate of the data writing transistor T4 is electrically connected to the first scan signal line Gate1, the first terminal of the data writing transistor T4 is electrically connected to the data signal line Data, and the second terminal of the data writing transistor T4 is electrically connected to the second node N2. The data writing transistor T4 is configured to transmit the data signal received at the data signal line Data to the driving transistor T3 in response to a scan signal received at the first scan signal line Gate1.

[0111] For example, as shown in FIG2C, the first light-emitting control transistor T5 includes a gate, a first electrode, and a second electrode. The gate of the first light-emitting control transistor T5 is electrically connected to the light-emitting control signal line EM, the first electrode of the first light-emitting control transistor T5 is electrically connected to the power supply signal line VDD, and the second electrode of the first light-emitting control transistor T5 is electrically connected to the second node N2. The first light-emitting control transistor T5 is configured to transmit the power supply signal received at the power supply signal line VDD to the driving transistor T3 in response to the light-emitting control signal received at the light-emitting control signal line EM.

[0112] For example, as shown in FIG2C, the second light-emitting control transistor T6 includes a gate, a first electrode, and a second electrode. The gate of the second light-emitting control transistor T6 is electrically connected to the light-emitting control signal line EM, the first electrode of the second light-emitting control transistor T6 is electrically connected to the third node N3, and the second electrode of the second light-emitting control transistor T6 is electrically connected to the fourth node N4. The second light-emitting control transistor T6 is configured to transmit a drive current signal to the light-emitting device 200 in response to a light-emitting control signal received at the light-emitting control signal line EM, for driving the light-emitting device 200 to emit light.

[0113] For example, as shown in FIG2C, the second reset transistor T7 includes a gate, a first terminal, and a second terminal. The gate of the second reset transistor T7 is electrically connected to the second reset signal line Reset2, the first terminal of the second reset transistor T7 is electrically connected to the second initialization signal line Vinit2, and the second terminal of the second reset transistor T7 is electrically connected to the fourth node N4. The second reset transistor T7 is configured to transmit the initial signal received at the second initialization signal line Vinit2 to the light-emitting device 200 in response to a reset signal received at the second reset signal line Reset2, so as to reset the light-emitting device 200.

[0114] For example, the anode of the light-emitting device 200 is electrically connected to the fourth node N4, and the cathode of the light-emitting device 200 is electrically connected to the reference voltage line VSS.

[0115] It should be noted that the first electrode of the transistor in this disclosure is one of the source and drain of the transistor, and the second electrode is the other of the source and drain of the transistor. Since the source and drain of a transistor can be structurally symmetrical, they can be structurally indistinguishable. That is, the first electrode and the second electrode of the transistor in the embodiments of this disclosure can be structurally indistinguishable. For example, in the case of a P-type transistor, the first electrode is the source and the second electrode is the drain; for example, in the case of an N-type transistor, the first electrode is the drain and the second electrode is the source.

[0116] In some examples, as shown in FIG2A, the display panel 300 also includes an encapsulation structure 330 covering the side of the isolation structure 100 and the light-emitting device 200 away from the substrate 310.

[0117] For example, the thickness of the packaging structure 330 can be in the range of 5nm to 80nm, such as 5nm, 10nm, 30nm, 50nm, 65nm or 80nm.

[0118] In practical applications, the refractive index of the packaging structure 330 can be adjusted to improve light extraction efficiency. For example, the material of the packaging structure 330 has a refractive index greater than 1.8 at a set wavelength, such as 1.8, 1.9, 2.0, or 2.2. This set wavelength is, for example, 460 nm.

[0119] Understandably, the encapsulation structure 330 covers the light-emitting device 200, encapsulating the light-emitting device 200 to prevent moisture and oxygen from the external environment from entering the display panel 300 and damaging the materials (e.g., organic materials) in the light-emitting device 200, thereby shortening the lifespan of the display panel 300.

[0120] In some embodiments, the display panel 300 further includes a color filter (CF) layer, which is disposed, for example, on the side of the encapsulation structure 330 away from the light-emitting device 200. The color filter layer may include a plurality of color filter portions arranged along the extension direction of the color filter layer, and one color filter portion may be opposite to a pixel aperture Q.

[0121] For example, multiple color filter sections can be spaced apart; for instance, two adjacent color filter sections can be separated by a light-absorbing pattern located between them.

[0122] The aforementioned color filter unit can be configured to allow light of the same color to pass through and filter out light of a different color.

[0123] In some embodiments, as shown in Figures 2A and 3, the display panel 300 includes a first electrode layer 210G disposed on a substrate 310. The first electrode layer 210G includes a plurality of first electrodes 210 disposed at intervals. When the display panel 300 includes the first electrode layer 210G, the isolation structure 100 may be disposed on the side of the first electrode layer 210G away from the substrate 310, and each pixel opening Q is located above one of the first electrodes 210.

[0124] For example, a plurality of first electrodes 210 may be arranged in a direction Y parallel to the plane of the substrate 310.

[0125] For example, as shown in Figures 2A and 2C, when the pixel driving circuit 320a is a 7T1C circuit, the first electrode 210 can be electrically connected to the fifth conductive layer 328 through the via of the second planarization layer 3209, thereby realizing the electrical connection between the first electrode 210 and the fourth node N4.

[0126] It should be noted that Figure 3 is a structural diagram of the light-emitting device 200. Furthermore, Figure 3 shows a gap between the hole injection layer 2263 and the transparent conductive layer 2222 in the first light-emitting device 200A, and a gap between the hole injection layer 2263 and the transparent conductive layer 2222 in the second light-emitting device 200D. These gaps are not actual gaps; they are only used to illustrate that the thickness of the first electrode 210 in the third light-emitting device 200C is greater than the thickness of the first electrode 210 in the first light-emitting device 200A, and also greater than the thickness of the first electrode 210 in the second light-emitting device 200D. In practical applications, the hole injection layer 2263 in the first light-emitting device 200A is in contact with the transparent conductive layer 2222, and the hole injection layer 2263 in the second light-emitting device 200D is in contact with the transparent conductive layer 2222.

[0127] In some embodiments, as shown in FIG2A and FIG3, the display panel 300 includes a light-emitting functional layer 220G disposed on the side of the isolation structure 100 and the plurality of first electrodes 210 away from the substrate 310, and also includes a second electrode layer 230G disposed on the side of the light-emitting functional layer 220G away from the substrate 310.

[0128] It should be understood that the second electrode layer 230G can form the second electrode 230 of the light-emitting device 200.

[0129] In some examples, as shown in Figure 3, the first electrode 210 is the anode and the second electrode 230 (see Figure 2A) is the cathode. In this case, the light-emitting device 200 can be called a positively positioned light-emitting device. In still other examples, the first electrode 210 is the cathode and the second electrode 230 is the anode. In this case, the light-emitting device 200 can be called an inverted light-emitting device.

[0130] With the above settings, the light-emitting functional layer 220G is a shared structure for multiple sub-pixels. Compared with the case of using a fine mask to prepare the light-emitting layer, the complexity of the display panel 300 can be reduced, and the manufacturing cost of the display panel 300 can be reduced.

[0131] When the light-emitting functional layer 220G is not patterned, the light-emitting functional layers 220G of the light-emitting devices 200 are connected. In some examples, the light-emitting functional layer 220G includes highly conductive portions (e.g., the first charge-generating layer 2221 and / or the second charge-generating layer 2222, described in detail below), causing lateral conductivity issues along the layer extension direction. For example, the material of the first charge-generating layer 2221 may include metallic lithium, which is highly reactive, and adjacent pixel openings Q are close together, causing lateral conductivity issues along the layer extension direction of the light-emitting functional layer 220G. This can easily lead to a situation where when a light-emitting device in a pixel opening Q is displayed, light-emitting devices in one or more surrounding pixel openings Q are also simultaneously lit, resulting in inter-pixel crosstalk.

[0132] Therefore, in some embodiments, the light-emitting functional layer 220G is separated by the isolation structure 100, forming a plurality of light-emitting functional patterns 220 respectively located in a plurality of pixel openings Q. Each first electrode 210, the light-emitting functional pattern 220 located in the pixel opening Q above the first electrode 210, and the portion of the second electrode layer 230G covering the light-emitting functional pattern 220 form a light-emitting device.

[0133] Understandably, by isolating the light-emitting functional layer 220G by the isolation structure 100, the multiple light-emitting functional patterns 220 located in the multiple pixel openings Q can be arranged at intervals, thus preventing crosstalk between light-emitting devices in adjacent pixel openings Q.

[0134] Here, the structure of the isolation structure 100 is not limited, as long as it can meet the requirement of blocking the light-emitting functional layer 220G. For example, the isolation structure 100 may include the pixel defining layer 110A and the blocking layer 120A as described in detail below (see Figures 5A to 5C); as another example, the isolation structure 100 may include the pixel defining layer 110B and the blocking layer 120B as described in detail below (see Figures 6A to 6C); as yet another example, the isolation structure 100 may include the pixel defining layer 110C as described in detail below and a plurality of isolation trenches 130 (see Figures 7A to 7C).

[0135] It should be understood that when multiple light-emitting functional patterns 220 are formed by being separated by a light-emitting functional layer 220G, the light-emitting functional patterns 220 are located in the same film layer and have the same material and thickness. Similarly, when the second electrode 230 is formed by covering the portion of the light-emitting functional pattern 220 in the second electrode layer 230G, the second electrodes 230 located within the multiple pixel openings Q are located in the same film layer and have the same material and thickness. Therefore, the light-emitting functional patterns 220 and the second electrodes 230 located within the multiple pixel openings Q have the same thickness dimension.

[0136] For example, the light-emitting functional pattern 220 can form the organic light-emitting diode (OLED) layer of the light-emitting device 200.

[0137] The light-emitting principle of the aforementioned light-emitting device 200 can be summarized as follows: A circuit (e.g., pixel driving circuit 320a) connecting an anode (either of the first electrode 210 and the second electrode 230) and a cathode (the other of the first electrode 210 and the second electrode 230) injects holes into the light-emitting functional pattern 220 using the anode, and electrons are injected into the light-emitting functional pattern 220 using the cathode. The opposing movement of electrons and holes forms a current in the light-emitting device 200. Furthermore, electrons and holes recombine in the light-emitting functional pattern 220 to form excitons (e.g., excitons formed in the first light-emitting layer 221A, the second light-emitting layer 221D, and the third light-emitting layer 221C, described in detail below). The excitons then radiatively transition back to the ground state, emitting photons. In short, the light-emitting principle of the light-emitting device 200 mainly includes four processes: carrier injection, carrier transport, carrier recombination, and light emission.

[0138] In some embodiments, as shown in FIG2A and FIG3, each light-emitting functional pattern 220 includes a first light-emitting layer 221A and a second light-emitting layer 221D. The first light-emitting layer 221A is closer to the substrate 310 than the second light-emitting layer 221D. The light emitted by the first light-emitting layer 221A is a first color, and the light emitted by the second light-emitting layer 221D is a second color. The wavelength of the light of the first color is greater than the wavelength of the light of the second color.

[0139] When the wavelength of the first color light is greater than the wavelength of the second color light, the first color and the second color are different colors. By configuring each light-emitting functional pattern 220 to include a first light-emitting layer 221A and a second light-emitting layer 221D, the light emitted by the light-emitting device 200 can include both the first color light and the second color light.

[0140] In some examples, the first color is red and the second color is green; in other examples, the first color is red and the second color is blue.

[0141] For example, the thickness of the first light-emitting layer 221A is in the range of 5nm to 30nm, such as 5nm, 10nm, 15nm, 20nm, 22nm, 25nm or 30nm.

[0142] For example, the thickness of the second light-emitting layer 221D ranges from 20nm to 50nm, such as 20nm, 25nm, 30nm, 35nm, 40nm, 45nm or 50nm.

[0143] In some embodiments, as shown in Figures 3 and 4, the first electrode 210 includes a first sublayer 211 and a second sublayer 212 stacked in a direction away from the substrate 310. The first sublayer 211 is capable of reflecting light, and the second sublayer 212 is capable of transmitting light. The second electrode layer 230G is capable of transmitting and reflecting light.

[0144] For example, the material of the first sublayer 211 can be a highly reflective conductive material, such as a highly reflective metallic material, including but not limited to aluminum (Al) or silver (Ag). For example, the first sublayer 211 can reflect more than 70% of light, more than 80% of light, more than 90% of light, more than 95% of light, or more than 99% of light.

[0145] For example, the thickness of the first sublayer 211 ranges from 50nm to 100nm, such as 50nm, 60nm, 70nm, 70nm, 80nm, 90nm or 100nm.

[0146] For example, the material of the second electrode layer 230G can be a partially transparent conductive material, such as the second electrode layer 230G can be formed by a combination of magnesium (Mg) and silver (Ag).

[0147] In some embodiments, as shown in FIG3, the transmittance of the second electrode layer 230G to light within a preset wavelength band is greater than or equal to 40% and less than or equal to 70%; wherein, the preset wavelength band range is 440nm to 660nm.

[0148] For example, the transmittance of the second electrode layer 230G to light within a preset wavelength band can be 40%, 50%, 55%, 60%, 62%, or 70%, etc.

[0149] When the transmittance of the second electrode layer 230G to light within the preset wavelength band is greater than or equal to 40% and less than or equal to 70%, the transmittance of the second electrode layer 230G to light within the preset wavelength band is within a suitable range, which can increase the light emission efficiency to a certain extent and improve the light emission efficiency of the display panel 300.

[0150] In some embodiments, as shown in FIG3, the reflectivity of the second electrode layer 230G is greater than or equal to 30% and less than or equal to 60%.

[0151] For example, the reflectivity of the second electrode layer 230G can be 30%, 35%, 40%, 46%, 50%, 55%, or 60%, etc.

[0152] For example, the thickness of the second electrode layer 230G (i.e., the second electrode 230) ranges from 10nm to 20nm, such as 10nm, 12nm, 13nm, 14nm, 16nm, 18nm or 20nm.

[0153] It should be understood that when the transmittance of the second electrode layer 230G to light within a preset wavelength band is greater than or equal to 40% and less than or equal to 70%, and the reflectivity of the second electrode layer 230G is greater than or equal to 30% and less than or equal to 60%, the second electrode layer 230G has the characteristics of being semi-transparent and semi-reflective.

[0154] To achieve light emission from the light-emitting functional pattern 220, the light-emitting functional pattern 220 must be able to transmit light. Thus, with the second sub-layer 212 able to transmit light and the first sub-layer 211 and the second electrode layer 230G able to reflect light, the light-emitting device 200 has an optical cavity defined by the first sub-layer 211 and the second electrode layer 230G. Furthermore, for the aforementioned light-emitting device 200, the thickness of the second sub-layer 212 and the thickness of the light-emitting functional pattern 220 together determine the thickness of the optical cavity of the light-emitting device 200. When the thickness of each light-emitting functional pattern 220 is the same, the thickness of the second sub-layer 212 determines the thickness of the optical cavity of the light-emitting device 200 located in different pixel openings Q.

[0155] For a given optical cavity thickness, light of a given wavelength will resonate due to multiple reflections from the walls of the optical cavity (e.g., the first electrode 210 and the second electrode 230). The increase in emission at a given wavelength caused by resonance within the optical cavity can be referred to as the microcavity effect.

[0156] Based on this, in some embodiments, as shown in FIG3, the light-emitting device 200 includes a first light-emitting device 200A and a second light-emitting device 200D, wherein the thickness of the second sub-layer 212 in the first light-emitting device 200A and the second sub-layer 212 in the second light-emitting device 200D are different. The first light-emitting layer 221A of the first light-emitting device 200A is near the surface of the substrate 310 (see FIG2A) and has a first distance L1 between it and the surface of the first electrode 210 of the first light-emitting device 200A near the surface of the substrate 310. The second light-emitting layer 221D of the second light-emitting device 200D is near the surface of the substrate 310 and has a second distance L2 between it and the surface of the first electrode 210 of the second light-emitting device 200D near the surface of the substrate 310. The ratio of the first distance L1 to the second distance L2 ranges from 1.0 to 1.5.

[0157] That is, the first distance L1 and the second distance L2 satisfy the following:

[0158] For example, the ratio of the first distance L1 to the second distance L2 can be 1.00, 1.10, 1.20, 1.30, 1.34, 1.40 or 1.50, etc.

[0159] Understandably, by setting the second sub-layer 212 in the first light-emitting device 200A and the second sub-layer 212 in the second light-emitting device 200D to have different thicknesses, the first light-emitting device 200A and the second light-emitting device 200D can have different optical cavity thicknesses, which can be matched with light of different wavelengths. As a result, the first color light emitted by the first light-emitting device 200A and the second color light emitted by the second light-emitting device 200D can both be emitted more due to the microcavity effect. Furthermore, in order to enhance the effect of increased emission of the first color light emitted by the first light-emitting device 200A and the second color light emitted by the second light-emitting device 200D, the first light-emitting layer 221A in the first light-emitting device 200A and the second light-emitting layer 221D in the second light-emitting device 200D must both be located within their respective micro-intensity enhancement regions. The position of the micro-intensity enhancement region is related to the wavelength of the light, making the position of the micro-cavity enhancement region corresponding to the first light-emitting layer 221A different from the position of the micro-cavity enhancement region corresponding to the second light-emitting layer 221D. Consequently, the distance between the micro-cavity enhancement region corresponding to the first light-emitting layer 221A in the first light-emitting device 200A and the first electrode 210 in the first light-emitting device 200A is different from the distance between the micro-cavity enhancement region corresponding to the second light-emitting layer 221D in the second light-emitting device 200D and the first electrode 210 in the second light-emitting device 200D.

[0160] By setting the ratio of the first distance L1 to the second distance L2 to be in the range of 1.0 to 1.5, the first distance L1 can be matched with the wavelength of the first color light, and the second distance L2 can be matched with the wavelength of the second color light. In this way, the first light-emitting layer 221A in the first light-emitting device 200A can be located in the microcavity enhancement region of the first light-emitting device 200A, and the second light-emitting layer 221D in the second light-emitting device 200D can be located in the microcavity enhancement region of the second light-emitting device 200D. A strong microcavity effect can be formed in both the first light-emitting device 200A and the second light-emitting device 200D, which can optimize the spectrum emitted by the display panel 300 and improve the light emission efficiency of the display panel 300.

[0161] In some examples, the first light-emitting layer 221A in the first light-emitting device 200A and the second light-emitting layer 221D in the second light-emitting device 200D are located in the same period (e.g., the second period) within the microcavity enhancement region.

[0162] In some embodiments, the plurality of color filter portions include a first color filter portion and a second color filter portion, wherein the color of the first color filter portion is a first color, and the color of the second color filter portion is a second color. In this case, the first light-emitting device 200A may be opposite to the first color filter portion, and the second light-emitting device 200D may be opposite to the second color filter portion.

[0163] Thus, the first color filter allows the first color light emitted by the first light-emitting device 200A to pass through, while filtering out other color light emitted by the first light-emitting device 200A besides the first color light (e.g., second color light and / or third color light). The second color filter allows the second color light emitted by the second light-emitting device 200D to pass through, while filtering out other color light emitted by the second light-emitting device 200D besides the second color light (e.g., first color light and / or third color light).

[0164] In some embodiments, as shown in Figures 2A and 3, each light-emitting functional pattern 220 further includes a third light-emitting layer 221C located on the side of the first light-emitting layer 221A near the substrate 310. The light emitted by the third light-emitting layer 221C is a third color, and the wavelength of the second color light is greater than the wavelength of the third color light.

[0165] For example, the thickness of the third light-emitting layer 221C ranges from 15nm to 50nm, such as 15nm, 20nm, 22nm, 30nm, 35nm, 40nm or 50nm.

[0166] For example, the first color is red, the second color is green, and the third color is blue.

[0167] In some examples, the light-emitting device comprising the first light-emitting layer 221A, the second light-emitting layer 221D, and the third light-emitting layer 221C can also be referred to as a white light-emitting device (e.g., a white organic light-emitting device, a white OLED light-emitting device). Exemplarily, a white organic light-emitting device is manufactured by depositing overlapping layers between the cathode and anode without patterning pixels during the formation of a light-emitting diode, without using a mask. In other words, organic layers including the organic light-emitting layer are sequentially formed by depositing different materials under vacuum conditions.

[0168] In some embodiments, as shown in FIG3, the light-emitting device 200 further includes a third light-emitting device 200C. The thicknesses of the second sub-layer 212 in the first light-emitting device 200A, the second sub-layer 212 in the second light-emitting device 200D, and the second sub-layer 212 in the third light-emitting device 200C are all different. The third light-emitting layer 221C of the third light-emitting device 200C is close to the surface of the substrate 310, and there is a third distance L3 between it and the surface of the first electrode 210 of the third light-emitting device 200C close to the substrate 310. The ratio of the second distance L2 to the third distance L3 ranges from 0.8 to 1.2.

[0169] That is, the second distance L2 and the third distance L3 satisfy the following:

[0170] For example, the ratio of the second distance L2 to the third distance L3 can be 0.80, 0.90, 0.97, 1.00, 1.10 or 1.20, etc.

[0171] Understandably, similar to the foregoing, by setting the thicknesses of the second sub-layer 212 in the first light-emitting device 200A, the second sub-layer 212 in the second light-emitting device 200D, and the second sub-layer 212 in the third light-emitting device 200C to be different, the first color light emitted by the first light-emitting device 200A, the second color light emitted by the second light-emitting device 200D, and the third color light emitted by the third light-emitting device 200C will resonate due to multiple reflections from the walls of the optical cavity, thus realizing the microcavity effect.

[0172] Furthermore, by setting the ratio of the second distance L2 to the third distance L3 to be in the range of 0.8 to 1.2, the second distance L2 can be matched with the wavelength of the second color light, and the third distance L3 can be matched with the wavelength of the third color light. In this way, the second light-emitting layer 221D in the second light-emitting device 200D can be located in the microcavity enhancement region of the second light-emitting device 200D, and the third light-emitting layer 221C in the third light-emitting device 200C can be located in the microcavity enhancement region of the third light-emitting device 200C. A strong microcavity effect can be formed in both the second light-emitting device 200D and the third light-emitting device 200C, which can enhance the effect of increased emission of the second color light emitted by the second light-emitting device 200D and the effect of increased emission of the third color light emitted by the third light-emitting device 200C. This can optimize the spectrum emitted by the display panel 300 and improve the light emission efficiency of the display panel 300.

[0173] In some examples, the second light-emitting layer 221D in the second light-emitting device 200D and the third light-emitting layer 221C in the third light-emitting device 200C are located in microcavity enhancement regions in different periods (e.g., the second period and the third period).

[0174] In some embodiments, the plurality of color filter portions includes a third color filter portion, wherein the color of the third color filter portion is a third color. In this case, the third light-emitting device 200C may be opposite to the third color filter portion.

[0175] In this way, the third color filter allows the third color light emitted by the third light-emitting device 200C to pass through, while filtering out other colors of light emitted by the third light-emitting device 200C besides the third color light (e.g., the first color light and / or the second color light). Thus, by including the first light-emitting device 200A, the second light-emitting device 200D, and the third light-emitting device 200C in the light-emitting device 2000, the brightness (grayscale) of each device can be adjusted individually. The light emitted by the first light-emitting device 200A, the second light-emitting device 200D, and the third light-emitting device 200C works in conjunction with each other, enabling the display panel 300 to perform its display function.

[0176] In some embodiments, as shown in Figures 2A and 3, the ratio of the first distance L1 to the third distance L3 ranges from 1.0 to 1.5.

[0177] That is, the first distance L1 and the third distance L3 satisfy the following:

[0178] For example, the ratio of the first distance L1 to the third distance L3 can be 1.00, 1.10, 1.20, 1.25, 1.30, 1.40, or 1.50, etc. Moreover, the ratio of the first distance L1 to the second distance L2 and the ratio of the first distance L1 to the third distance L3 can be the same or different, and there is no limitation here.

[0179] Understandably, similar to the aforementioned part, by setting the ratio of the first distance L1 to the third distance L3 to be in the range of 1.0 to 1.5, the first distance L1 can be matched with the wavelength of the first color light, and the third distance L3 can be matched with the wavelength of the third color light. In this way, the first light-emitting layer 221A in the first light-emitting device 200A can be located in the microcavity enhancement region of the first light-emitting device 200A, and the third light-emitting layer 221C in the third light-emitting device 200C can be located in the microcavity enhancement region of the third light-emitting device 200C. A strong microcavity effect can be formed in both the first light-emitting device 200A and the third light-emitting device 200C, which can enhance the effect of increased emission of the first color light emitted by the first light-emitting device 200A and the effect of increased emission of the third color light emitted by the third light-emitting device 200C. This can optimize the spectrum emitted by the display panel 300 and improve the light emission efficiency of the display panel 300.

[0180] In some examples, the first light-emitting layer 221A in the first light-emitting device 200A and the third light-emitting layer 221C in the third light-emitting device 200C are located in microcavity enhancement regions in different periods (e.g., the second period and the third period).

[0181] In some embodiments, as shown in FIG3, a fourth distance L4 is provided between the second electrode layer 230G near the surface of the substrate 310 and the third light-emitting layer 221C near the surface of the substrate 310. A fifth distance L5 is provided between the second electrode layer 230G near the surface of the substrate 310 and the first light-emitting layer 221A near the surface of the substrate 310. The ratio of the fourth distance L4 to the fifth distance L5 ranges from 1.8 to 2.2.

[0182] That is, the fourth distance L4 and the fifth distance L5 satisfy the following:

[0183] For example, the ratio of the fourth distance L4 to the fifth distance L5 can be 1.80, 1.90, 1.96, 2.00, 2.10 or 2.20, etc.

[0184] Understandably, by setting the ratio of the fourth distance L4 to the fifth distance L5 to be in the range of 1.8 to 2.2, the fourth distance L4 can be matched with the wavelength of the third color light, and the fifth distance L5 can be matched with the wavelength of the first color light. For example, the first light-emitting layer 221A in the first light-emitting device 200A and the third light-emitting layer 221C in the third light-emitting device 200C can be located in the microcavity enhancement region within adjacent periods. In this way, the first light-emitting layer 221A in the first light-emitting device 200A can be located in the microcavity enhancement region of the first light-emitting device 200A, and the third light-emitting layer 221C in the third light-emitting device 200C can be located in the microcavity enhancement region of the third light-emitting device 200C. A strong microcavity effect can be formed in both the first light-emitting device 200A and the third light-emitting device 200C, which can optimize the spectrum emitted by the display panel 300 and improve the light extraction efficiency of the display panel 300.

[0185] The above is an exemplary description of the positions of the first light-emitting layer 221A in the first light-emitting device 200A, the second light-emitting layer 221D in the second light-emitting device 200D, and the third light-emitting layer 221C in the third light-emitting device 200C, and the distances between them and other film layers. The following will provide an exemplary description of the method for adjusting the cavity length of the optical cavity and the position of the light-emitting layer.

[0186] In some embodiments, as shown in Figures 3 and 4, the second sub-layer 212 of the first electrode 210 includes a microcavity adjustment layer 2121 and a transparent conductive layer 2122. The microcavity adjustment layer 2121 is located between the first sub-layer 211 and the transparent conductive layer 2122 of the first electrode 210, and the transparent conductive layer 2122 is electrically connected to the first sub-layer 211.

[0187] When the transparent conductive layer 2122 is electrically connected to the first sub-layer 210, the driving signal of the pixel driving circuit 320a can be transmitted to the light-emitting functional pattern 220 sequentially via the first sub-layer 211 and the transparent conductive layer 2122. For example, in the case of a 7T1C circuit, the fourth node N4 (see Figure 2C) can be electrically connected to the transparent conductive layer 2122 through the first sub-layer 211 to realize the transmission of the driving signal.

[0188] It should be noted that the microcavity adjustment layer 2121 may include a single film layer or multiple stacked sublayers; there is no limitation here.

[0189] For example, the transparent conductive layer 2122 can be made of a transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO). In some examples, the transparent conductive layer 2122 is made of a material with a high work function.

[0190] For example, the thickness of the transparent conductive layer 2122 can be 2nm to 30nm, such as 2nm, 5nm, 10nm, 15nm, 20nm or 30nm.

[0191] In some embodiments, as shown in Figures 3 and 4, the transparent conductive layer 2122 has a transmittance of 90% or more for light within a preset wavelength range, which is 440 nm to 660 nm.

[0192] For example, the transmittance of the transparent conductive layer 2122 to light within a preset wavelength band can be 90%, 92%, 94%, 96%, or 100%, etc.

[0193] With the above settings, during the process of light of a given wavelength being reflected multiple times from the wall of the optical cavity and resonating, the transparent conductive layer 2122 absorbs less light reflected back through the first sub-layer 211, which can improve the light extraction efficiency of the display panel 300.

[0194] The following will provide an exemplary description of the electrical connection between the first sublayer 211 and the transparent conductive layer 2122.

[0195] In some embodiments, as shown in FIG3, the material of the microcavity adjustment layer 2121 includes a conductive material.

[0196] For example, the material of the microcavity conditioning layer 2121 may include a material compatible with the first sublayer 211 and the transparent conductive layer 2122, such as titanium nitride.

[0197] With the above configuration, the first sub-layer 211 and the transparent conductive layer 2122 can be electrically connected through the microcavity adjustment layer 2121.

[0198] In some embodiments, as shown in FIG4, the material of the microcavity adjustment layer 2121 includes an insulating material. In the same first electrode 210, a transparent conductive layer 2122 covers the side of the microcavity adjustment layer 2121 and is in contact with and electrically connected to the edge of the first sub-layer 211.

[0199] In some examples, the transparent conductive layer 2122 covers a portion of the side of the microcavity adjustment layer 2121; in still other examples, the transparent conductive layer 2122 covers the entire side of the microcavity adjustment layer 2121.

[0200] For example, the material of the microcavity conditioning layer 2121 may include one or any combination of silicon oxide, silicon nitride, silicon oxynitride and other insulating oxide materials.

[0201] With the above configuration, the first sub-layer 211 and the transparent conductive layer 2122 can be electrically connected through the portion of the transparent conductive layer 2122 that covers the side of the microcavity adjustment layer 2121.

[0202] It should be understood that when the second sub-layer 212 of the first electrode 210 includes a microcavity adjustment layer 2121 and a transparent conductive layer 2122, the thickness of the microcavity adjustment layer 2121 or the thickness of the transparent conductive layer 2122 can be set differently, so that the thicknesses of the second sub-layer 212 in the first light-emitting device 200A, the second sub-layer 212 in the second light-emitting device 200D, and the second sub-layer 212 in the third light-emitting device 200C are all different.

[0203] In some examples, the thicknesses of the transparent conductive layer 2122 in the first light-emitting device 200A, the transparent conductive layer 2122 in the second light-emitting device 200D, and the transparent conductive layer 2122 in the third light-emitting device 200C are all different.

[0204] In some embodiments, as shown in Figures 3 and 4, the thicknesses of the microcavity adjustment layer 2121A in the first light-emitting device 200A, the microcavity adjustment layer 2121D in the second light-emitting device 200D, and the microcavity adjustment layer 2121C in the third light-emitting device 200C are all different.

[0205] Understandably, through the above configuration, the thicknesses of the second sub-layer 212 in the first light-emitting device 200A, the second sub-layer 212 in the second light-emitting device 200D, and the second sub-layer 212 in the third light-emitting device 200C are all different. This results in different cavity lengths for the optical cavities in the first light-emitting device 200A, the second light-emitting device 200D, and the third light-emitting device 200C, enabling the light-emitting device 200 to achieve a microcavity effect. Furthermore, through the above configuration, the first light-emitting layer 221A in the first light-emitting device 200A, the second light-emitting layer 221D in the second light-emitting device 200D, and the third light-emitting layer 221C in the third light-emitting device 200C are located in the microcavity enhancement region of the corresponding light-emitting device, thereby achieving a strong microcavity effect.

[0206] In some embodiments, as shown in Figures 3 and 4, the thickness D1 of the microcavity adjustment layer 2121A of the first light-emitting device 200A is greater than the thickness D2 of the microcavity adjustment layer 2121D of the second light-emitting device 200D.

[0207] When the wavelength of the first color light is greater than the wavelength of the second color light, within the same period, the cavity length of the optical cavity of the first light-emitting device 200A is greater than the cavity length of the optical cavity of the second light-emitting device 200D. Therefore, through the above arrangement, the first light-emitting layer 221A in the first light-emitting device 200A and the second light-emitting layer 221D in the second light-emitting device 200D can be located in the same period (e.g., the second period) of the microcavity enhancement region. This can form a strong microcavity effect in both the first light-emitting device 200A and the second light-emitting device 200D, thereby optimizing the spectrum emitted by the display panel 300 and improving the light extraction efficiency of the display panel 300.

[0208] In some embodiments, as shown in Figures 3 and 4, the thickness D3 of the microcavity adjustment layer 2121C of the third light-emitting device 200C is greater than the thickness D2 of the microcavity adjustment layer 2121D of the second light-emitting device 200D.

[0209] On the one hand, through the above configuration, the second light-emitting layer 221D in the second light-emitting device 200D and the third light-emitting layer 221C in the third light-emitting device 200C can be located in the microcavity enhancement region within adjacent periods. For example, the second light-emitting layer 221D in the second light-emitting device 200D is located in the Nth period, and the third light-emitting layer 221C in the third light-emitting device 200C is located in the N+1th period, where N is, for example, 1, 2, or 3, etc., which can form a strong microcavity effect in both the second light-emitting device 200D and the third light-emitting device 200C. On the other hand, compared with the first color light and the second color light, the surface plasmon polariton (SPP) of the second electrode layer 230G causes relatively more loss of the third color light. When the second light-emitting layer 221D in the second light-emitting device 200D is located in the Nth cycle and the third light-emitting layer 221C in the third light-emitting device 200C is located in the N+1th cycle, the cavity length of the optical cavity of the third light-emitting device 200C is longer. This allows the third light-emitting layer 221C to be located relatively far away from the second electrode layer 230G (e.g., a cathode layer), which can reduce the loss of light emitted by the third light-emitting layer 221C due to the SPP effect of the second electrode layer 230G.

[0210] In some embodiments, as shown in FIG3, the thickness D1 of the microcavity adjustment layer 2121A of the first light-emitting device 200A ranges from [missing information].

[0211] For example, the thickness D1 of the microcavity adjustment layer 2121A of the first light-emitting device 200A can be... or wait.

[0212] In some embodiments, as shown in FIG3, the thickness D2 of the microcavity adjustment layer 2121D of the second light-emitting device 200D ranges from [missing information].

[0213] For example, the thickness D2 of the microcavity adjustment layer 2121D of the second light-emitting device 200D can be... or wait.

[0214] In some embodiments, as shown in FIG3, the thickness D3 of the microcavity adjustment layer 2121C of the third light-emitting device 200C ranges from [missing information].

[0215] For example, the thickness D3 of the microcavity adjustment layer 2121C of the third light-emitting device 200C can be... or wait.

[0216] In some embodiments, as shown in FIG3, the thickness D4 of the light-emitting functional layer 220G ranges from [missing information].

[0217] For example, the thickness D4 of the light-emitting functional layer 220G can be or wait.

[0218] On the one hand, through the above-mentioned arrangement, one or more of the following can be located within a suitable range: the thickness D1 of the microcavity adjustment layer 2121A of the first light-emitting device 200A, the thickness D2 of the microcavity adjustment layer 2121D of the second light-emitting device 200D, the thickness D3 of the microcavity adjustment layer 2121C of the third light-emitting device 200C, and the thickness D4 of the light-emitting functional layer 220G. This allows the first light-emitting layer 221A in the first light-emitting device 200A and the second light-emitting layer 221D in the second light-emitting device 200D to be located in the microcavity enhancement region within the second period, and the third light-emitting layer 221C in the third light-emitting device 200C to be located in the microcavity enhancement region within the third period. This can create a strong microcavity effect in the first light-emitting device 200A, the second light-emitting device 200D, and the third light-emitting device 200C. On the other hand, as mentioned above, the third light-emitting layer 221C can be located relatively far away from the second electrode layer 230G (e.g., a cathode layer), which can reduce the loss of light emitted by the third light-emitting layer 221C due to the SPP effect of the second electrode layer 230G.

[0219] The above is an exemplary description of the first electrode 210. The first light-emitting layer 221A, the second light-emitting layer 221D, and the third light-emitting layer 221C will be described exemplarily below.

[0220] For example, the materials of the light-emitting layers (first light-emitting layer 221A, second light-emitting layer 221D and third light-emitting layer 221C) may include host materials and doped materials (also referred to as guest materials).

[0221] The host material (including exciton complex) of the light-emitting layers (first light-emitting layer 221A, second light-emitting layer 221D, and third light-emitting layer 221C) can be configured to: transport holes or electrons, and / or, recombine electrons with holes to form excitons and transfer exciton energy to the doping material. The doping material of the light-emitting layers (first light-emitting layer 221A, second light-emitting layer 221D, and third light-emitting layer 221C) can be configured to: emit photons using the exciton energy transferred from the host material, and / or, recombine electrons with holes to form excitons and emit photons.

[0222] In some examples, the doped material is a fluorescent material, which can emit light using singlet excitons; in other examples, the doped material is a phosphorescent material or a delayed fluorescence material, which can emit light using triplet excitons.

[0223] In some examples, the host material includes two or more materials. For example, the host material may include two host materials, one is a hole-type material and the other is an electronic-type material, and the two materials can be combined to form an excitocomplex.

[0224] For example, when the first light-emitting layer 221A is used to emit red light, the material of the first light-emitting layer 221A may include a host material and a first dopant material. The host material of the first light-emitting layer 221A may be a second excimer compound, and the first dopant material may be a phosphorescent dopant. The second excimer compound includes hole-type materials and electron-type materials, which can form an excimer compound. The first dopant material can radiate light of a first color.

[0225] In this case, the main material of the first light-emitting layer 221A may include DCM series materials, such as 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM), 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulonidin-9-enyl)-4H-pyran (DCJTB), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinazin-9-yl)vinyl] =-4H-pyran-4-yl}malononitrile (DCJTI) or 2,8-bis(9H-carbazole-9-yl)dibenzo[b,d]thiophene (DCzDBT), etc.; the doping material of the first light-emitting layer 221A may include metal complexes, such as bis(1-phenyl-isoquinoline)(acetylacetone)iridium(III) (Ir(piq)2(acac)), platinum(II)octaethylporphyrin (PtOEP) or bis(2-(2'-benzothiophene)pyridine-N,C3')(acetylacetone)iridium(Ir(btp)2(acac)), etc. The structural formulas of DCzDBT and Ir(piq)2(acac) are shown below.

[0226] For example, when the second light-emitting layer 221D is used to emit green light, the host material of the second light-emitting layer 221D can be an excimer compound, and the doping material can be a phosphorescent dopant.

[0227] In this case, the host material of the second light-emitting layer 221D may include coumarin dyes, quinacridone copper derivatives, polycyclic aromatic hydrocarbons, diamine anthracene derivatives, or carbazole derivatives, such as N,N'-dimethylquinacridone (DMQA), N,N'-di-1-naphthyl-N,N'-diphenyl-[9,9'-bianthra]-10,10'-diamine; N1,N1'-diphenyl-N1,N1'-dinaphthyl-9,9'-bianthra-1,1'-diamine (BA-NPB), 8-hydroxyquinoline aluminum (Alq3), or 4,4'-di(9-carbazolyl)biphenyl (CPB), etc.; the doping material of the second light-emitting layer 221D may include metal complexes, such as tri(2-phenylpyridine)iridium (Ir(ppy)3) or di(2-phenylpyridine)iridium acetylacetonate (Ir(ppy)2(acac)), etc. The structural formulas of CPB and Ir(ppy)3 are shown below.

[0228] For example, when the third emitting layer 221C is used to emit blue light, the material of the third emitting layer 221C includes a host material and a third dopant material. The host material of the third emitting layer 221C may contain one host material (i.e., a single host), in which case the host material may be an anthracene-containing host material, and the third dopant material may be a fluorescent material. Alternatively, the host material of the third emitting layer 221C may be an excimer complex, in which case the third dopant material may be a phosphorescent material (phosphorescent dopant). Moreover, when the host material includes two materials, the two materials may be isomers, homologues, or excimer complexes.

[0229] In this case, the host material of the third luminescent layer 221C may include anthracene derivatives, such as 9,10-bis(2-naphthyl)anthracene (ADN) or 2-methyl-9,10-dinaphthylanthracene (MADN); the doping material of the third luminescent layer 221C may include pyrene derivatives, fluorene derivatives, perylene derivatives, styrylamine derivatives, or metal complexes, such as 2,5,8,11-tetratert-butylperylene (TBPe), 4,4'-bis[4-(diphenylamino)styryl]biphenyl (BDAVBi), 4,4'-bis[4-(di-p-tolylamino)styryl]biphenyl (DPAVBi), or bis(4,6-difluorophenylpyridine-C2,N)pyridinecarboxyiridium (FIrpic), etc. The structural formulas of ADN and DPAVBi are shown below.

[0230] In some embodiments, as shown in FIG3, the material of the first light-emitting layer 221A includes a first host material H1. The material of the second light-emitting layer 221D includes a first excimer complex. The first excimer complex includes a second host material HD and a third host material H3, wherein the second host material HD is a hole-type material. The absolute value of the difference between the highest occupied molecular orbital (HOMO) energy levels of the first host material H1 and the second host material HD is less than or equal to 0.3 eV. That is, |HOMO(H1) - HOMO(HD)| ≤ 0.3 eV.

[0231] For example, the first host material H1 is a hole-type material, which can transmit holes to the second light-emitting layer 221D while ensuring the emission of the first color light.

[0232] In some examples, the material of the second light-emitting layer 221D also includes a second doping material, such as a phosphorescent dopant.

[0233] For example, the absolute value of the difference between the highest occupied molecular orbital energy levels of the first host material H1 and the second host material HD is equal to 0 eV, 0.05 eV, 0.1 eV, 0.15 eV, 0.2 eV or 0.3 eV, etc.

[0234] Understandably, the first light-emitting layer 221A is closer to the first electrode 210 than the second light-emitting layer 221D. When the first electrode 210 is the anode, and the absolute value of the difference between the HOMO energy levels of the first host material H1 and the second host material HD is less than or equal to 0.3 eV, the absolute value of the difference between the HOMO energy levels of the first host material H1 and the second host material HD is relatively small. Holes generated by the charge-generating layer (e.g., the second charge-generating layer 2222 described in detail below) or the first electrode 210 can be smoothly transported to the second light-emitting layer 221D via the first light-emitting layer 221A, allowing the doped material of the second light-emitting layer 221D to emit light. Moreover, when the material of the second light-emitting layer 221D includes the first exciton complex, the exciton complex can be used to better control the balance of charge carriers in the second light-emitting layer 221D, thereby effectively controlling the exciton recombination region and increasing the exciton utilization rate.

[0235] In some embodiments, as shown in FIG3, the hole mobility of the material of the first light-emitting layer 221A is greater than the hole mobility of the material of the second light-emitting layer 221D.

[0236] With the above configuration, the material of the first light-emitting layer 221A can have good hole transport performance on the basis of recombination to form excitons and emit light. It can also take into account the function of transporting holes, so that holes can be transported to the second light-emitting layer 221D through the first light-emitting layer 221A, and the doped material of the second light-emitting layer 221D can emit light.

[0237] In some embodiments, as shown in FIG3, the ratio of hole mobility to electron mobility of the material of the second light-emitting layer 221D ranges from 0.01 to 100.

[0238] For example, the ratio of hole mobility to electron mobility of the material of the second light-emitting layer 221D can be 0.01, 0.1, 0.5, 1.0, 10, 20, 50 or 100, etc.

[0239] By setting the above, the exciton recombination region in the second light-emitting layer 221D can be adjusted, so that the exciton recombination region of the first light-emitting layer 221A is separated from the exciton recombination region of the second light-emitting layer 221D. This can prevent energy transfer between the first light-emitting layer 221A and the second light-emitting layer 221D, thus avoiding color shift.

[0240] In some embodiments, the peak wavelength range of the photoluminescence spectrum (also known as the PL spectrum) of the first doped material is 600 nm to 650 nm.

[0241] For example, the peak wavelength of the photoluminescence spectrum of the first doped material can be 600 nm, 610 nm, 620 nm, 630 nm, 635 nm, 640 nm or 650 nm, etc.

[0242] In some embodiments, the peak wavelength range of the photoluminescence spectrum of the second doped material is 500 nm to 540 nm.

[0243] For example, the peak wavelength of the photoluminescence spectrum of the second doped material can be 500 nm, 510 nm, 520 nm, 525 nm, 530 nm or 540 nm, etc.

[0244] In some embodiments, the peak wavelength range of the photoluminescence spectrum of the third doped material is 440 nm to 490 nm.

[0245] For example, the peak wavelength of the photoluminescence spectrum of the first doped material can be 440 nm, 450 nm, 460 nm, 470 nm, 480 nm or 490 nm, etc.

[0246] By using the above settings, the doped material (first doped material, second doped material, or third doped material) can have a large quantum yield, thereby improving the efficiency of the light-emitting device 200.

[0247] In some embodiments, as shown in FIG3, the peak wavelength range of the electroluminescence spectrum (also known as the EL spectrum) of the first light-emitting device 200A is 600nm to 650nm.

[0248] For example, the peak wavelength of the electroluminescence spectrum of the first light-emitting device 200A can be 600nm, 610nm, 620nm, 625nm, 630nm, 640nm or 650nm, etc.

[0249] In some embodiments, as shown in FIG3, the peak wavelength range of the electroluminescence spectrum of the second light-emitting device 200D is 500nm to 540nm.

[0250] For example, the peak wavelength of the electroluminescence spectrum of the second light-emitting device 200D can be 500nm, 510nm, 520nm, 530nm, 535nm or 540nm, etc.

[0251] In some embodiments, as shown in FIG3, the peak wavelength range of the electroluminescence spectrum of the third light-emitting device 200C is 440nm to 490nm.

[0252] For example, the peak wavelength of the electroluminescence spectrum of the third light-emitting device 200C can be 440nm, 450nm, 465nm, 470nm, 480nm or 490nm, etc.

[0253] With the above settings, the light emitted by the light-emitting layer (first light-emitting layer 221A, second light-emitting layer 221D or third light-emitting layer 221C) can have greater brightness, thus improving the brightness of the light-emitting device 200.

[0254] The above is an exemplary description of the first light-emitting layer 221A, the second light-emitting layer 221D, and the third light-emitting layer 221C. The structure of the isolation structure 100 will be described exemplary below. First, the case where the isolation structure 100 includes a pixel defining layer 110A and a partition layer 120A will be described.

[0255] In some embodiments, as shown in Figures 5A-5C, the isolation structure 100 includes a pixel defining layer 110A and a partition layer 120A. The pixel defining layer 110A defines a plurality of first sub-openings Q1. The partition layer 120A is stacked with the pixel defining layer 110A and defines a plurality of second sub-openings Q2; each second sub-opening Q2 and a first sub-opening Q1 are interconnected to form a pixel opening Q. The partition layer 120A includes a first sub-partition layer 121 and a second sub-partition layer 122 stacked in a direction away from the substrate 310. The second sub-partition layer 122 includes an edge portion 122a that extends relative to the first sub-partition layer 121 in a direction closer to the center line M of the adjacent pixel opening Q.

[0256] It should be understood that when the display panel 300 includes a first light-emitting device 200A, a second light-emitting device 200D, and a third light-emitting device 200C, and the isolation structure 100 defines multiple pixel openings Q, the number of edge portions 122a can be multiple. In some examples, multiple pixel openings Q are provided in a one-to-one correspondence with multiple edge portions 122a; in other examples, some pixel openings Q have edge portions 122a, while other pixel openings Q do not have edge portions 122a.

[0257] Here, the extension of the edge portion 122a relative to the first sub-partition layer 121 towards the center line M of the adjacent pixel opening Q means that the edge portion 122a is closer to the center line M of the adjacent pixel opening Q relative to the first sub-partition layer 121. It should be noted that the center line M of the pixel opening Q is a virtual line located within the pixel opening Q and perpendicular to the substrate 310. The center line M can be used to roughly determine the position of the center of the pixel opening Q. When the cross-section of the pixel opening Q parallel to the substrate 310 is a regular shape, the center line M of the pixel opening Q passes through the geometric center of this regular shape.

[0258] In some examples, the second sub-partition layer 122 includes a plurality of edge portions 122a spaced apart, and each edge portion 122a surrounds the center line M of a pixel opening Q, that is, the edge portion 122a can be closed.

[0259] It should be understood that during the formation of the light-emitting functional layer 220G, the material of the light-emitting functional layer 220G will be distributed on the side of the first electrode 210 away from the substrate 310, and may also be distributed on the side of the edge portion 122a away from the substrate 310. The portion distributed on the side of the first electrode 210 away from the substrate 310 can form the light-emitting functional pattern 220.

[0260] In some examples, the light-emitting functional pattern 220 is located between the plane of the edge portion 122a near the surface of the substrate 310 and the first electrode 210.

[0261] Understandably, by including an edge portion 122a in the second sub-isolation layer 122, which extends relative to the first sub-isolation layer 121 in a direction close to the center line M of the adjacent pixel opening Q, a first recessed structure V1 can be formed on the isolation layer 120A on the side of the edge portion 122a near the substrate 310. The material of the light-emitting functional layer 220G cannot fill or cover the first recessed structure V1. In this way, along the first direction X, the light-emitting functional pattern 220 can be confined between the plane of the edge portion 122a near the substrate 310 and the first electrode 210, so that the light-emitting functional layer 220G is isolated by the isolation layer 120A, which can block the lateral displacement of charge, prevent the phenomenon of accompanying light emission, and improve the color purity of the display panel 300.

[0262] For example, when the isolation structure includes a pixel defining layer 110A and a blocking layer 120A, a state reference diagram of the formation of the light-emitting functional layer 220G using a vapor deposition method is shown in Figure 5C, where the structure indicated by the reference numeral J is the vapor deposition source. As can be seen from Figure 5C, during vapor deposition, the light-emitting functional layer 220G is difficult to fill the area shown by the dashed line in the figure, thereby achieving the purpose of blocking the light-emitting functional layer 220G.

[0263] In some examples, the partition layer 120A is located on the side of the pixel defining layer 110A away from the first electrode layer 210G. In this case, the first electrode layer 210G, the pixel defining layer 110A, and the partition layer 120A can be sequentially layered on the substrate 310.

[0264] In some embodiments, as shown in FIG5B, the partition layer 120A is located between the pixel defining layer 110A and the first electrode layer 210G. The dimension D5 of the edge portion 122a along the second direction Z1 ranges from 0.4μm to 1μm. The second direction Z1 is parallel to the substrate 310 and points from any point on the edge portion 122a to the center line M of the adjacent pixel opening Q.

[0265] For example, the dimension D5 of the edge portion 122a along the second direction Z1 can be 0.4μm, 0.5μm, 0.6μm, 0.7μm, 0.8μm, 0.9μm or 1μm, etc.

[0266] When the dimension D5 of the edge portion 122a along the second direction Z1 is in the range of 0.4μm to 1μm, the dimension D5 of the edge portion 122a along the second direction Z1 is relatively large, which can increase the degree of the first recessed structure V1 and increase the difficulty of the material of the light-emitting functional layer 220G filling or covering the first recessed structure V1. For example, when the light-emitting functional layer 220G is formed by vapor deposition, it is difficult for the material of the light-emitting functional layer 220G to be vapor deposited into the first recessed structure V1. In this way, it is beneficial to improve the blocking effect of the partition layer 120A on the light-emitting functional layer 220G.

[0267] In some embodiments, as shown in FIG5B, the thickness D6 of the first sub-partition layer 121 ranges from 1 μm to 4 μm.

[0268] For example, the thickness D6 of the first sub-partition layer 121 can be 1μm, 1.5μm, 2.0μm, 2.5μm, 3.0μm, 3.5μm or 4.0μm, etc.

[0269] When the thickness D6 of the first sub-partition layer 121 ranges from 1 μm to 4 μm, a larger thickness D6 can increase the dimensions of the first recessed structure V1 along the first direction X. Similarly, this increases the difficulty of filling or covering the first recessed structure V1 with material from the light-emitting functional layer 220G, thus improving the blocking effect of the partition layer 120A on the light-emitting functional layer 220G. Furthermore, when the thickness D4 of the light-emitting functional layer 220G ranges from... In the case where the thickness D6 of the first sub-partition layer 121 is in the range of 1μm to 4μm, the thickness D6 of the first sub-partition layer 121 is greater than the thickness D4 of the light-emitting functional layer 220G (see Figure 3), which can make the light-emitting functional pattern 220 located between the plane of the edge portion 122a near the surface of the substrate 310 and the first electrode 210.

[0270] For example, when the partition layer 120A includes a first sub-partition layer 121 and a second sub-partition layer 122, the edge of the first sub-partition layer 121 covers the edge of the first electrode 210 adjacent to it.

[0271] In some examples, as shown in Figure 5B, the thickness D7 of the second sub-partition layer 122 ranges from 1 μm to 4 μm. For example, it can be 1 μm, 1.6 μm, 2.0 μm, 2.5 μm, 3.0 μm, 3.5 μm, or 4.0 μm.

[0272] In some examples, as shown in Figure 5B, the side of the first sub-partition layer 121 is inclined. The angle α formed by the side of the first sub-partition layer 121 and the surface of the second sub-partition layer 122 near the first sub-partition layer 121 ranges from 60° to 90°, for example, 60°, 65°, 70°, 75°, 80°, 85° or 90°.

[0273] In some embodiments, as shown in Figures 5A and 5B, the partition layer 120A further includes a third sub-partition layer 123 located between the first sub-partition layer 121 and the substrate 310.

[0274] For example, as shown in Figures 5A and 5B, the third sub-partition layer 123 includes an edge portion 123a that extends toward the center line M of the adjacent pixel opening Q relative to the first sub-partition layer 121.

[0275] For example, as shown in FIG5B, the thickness D8 of the third sub-partition layer 123 ranges from 1μm to 4μm. For example, it is 1μm, 1.5μm, 2.0μm, 2.4μm, 3.0μm, 3.5μm or 4.0μm, etc.

[0276] In some embodiments, as shown in FIG5B, the size range of the edge portion 123a along the second direction Z1 is 0.4μm to 1μm, for example, 0.4μm, 0.5μm, 0.62μm, 0.7μm, 0.8μm, 0.9μm or 1μm.

[0277] For example, as shown in FIG5A, when the partition layer 120A includes a first sub-partition layer 121, a second sub-partition layer 122 and a third sub-partition layer 123, the edge of the third sub-partition layer 123 covers the edge of the first electrode 210 adjacent to it.

[0278] The following provides an exemplary description of the case where the isolation structure 100 includes a pixel defining layer 110B and a partition layer 120B.

[0279] In some embodiments, as shown in Figures 6A-6D, the isolation structure 100 includes a pixel defining layer 110B and a partition layer 120B. The pixel defining layer 110B defines a plurality of first sub-openings Q1'. The partition layer 120B is stacked on the side of the pixel defining layer 110B away from the substrate 310 and defines a plurality of second sub-openings Q2'. Each second sub-opening Q2' and a first sub-opening Q1' intersect to form a pixel opening Q. The first cross-section K of the partition layer 120B is trapezoidal, and the dimension of the side of the trapezoid away from the substrate 310 is larger than the dimension of the side closer to the substrate 310; the first cross-section K is along the line connecting the centers of two adjacent pixel openings Q and is perpendicular to the substrate 310.

[0280] Here, the first cross-section K, which is along the line connecting the centers of two adjacent pixel openings Q and perpendicular to the substrate 310, means that the first cross-section K is parallel to the line connecting the centers of two adjacent pixel openings Q and perpendicular to the substrate 310. It should be noted that the center of the pixel opening Q is a point located within the pixel opening Q and on the centerline M of the aforementioned pixel opening Q (see Figure 5A). Along the first direction X, the distance between the center of the pixel opening Q and the plane containing the surface of the isolation structure 100 away from the substrate 310 is equal to the distance between the center of the pixel opening Q and the plane containing the surface of the isolation structure 100 close to the substrate 310. Alternatively, the center of the pixel opening Q can be understood as the geometric center of the pixel opening Q.

[0281] Understandably, when the first cross section K of the partition layer 120B is trapezoidal, and the size of the side of the trapezoid that is relatively far from the substrate 310 is larger than the size of the side that is relatively close to the substrate 310, a second recessed structure V2 can be formed on the partition layer 120B. The material of the light-emitting functional layer 220G cannot fill or cover the second recessed structure V2. For example, when the light-emitting functional layer 220G is formed by vapor deposition, the material of the light-emitting functional layer 220G is difficult to vapor deposit into the second recessed structure V2. In this way, the light-emitting functional layer 220G can be isolated by the partition layer 120B, which can block the lateral drift of charge, prevent the phenomenon of accompanying light emission, and improve the color purity of the display panel 300.

[0282] For example, when the isolation structure includes a pixel defining layer 110B and a blocking layer 120B, a state reference diagram of the formation of the light-emitting functional layer 220G using a vapor deposition method is shown in Figure 6C, where the structure indicated by the reference numeral J is the vapor deposition source. As can be seen from Figure 6C, during vapor deposition, the light-emitting functional layer 220G is difficult to fill the area shown by the dashed line in the figure, thereby achieving the purpose of blocking the light-emitting functional layer 220G.

[0283] In some embodiments, as shown in FIG6B, in the first section K, the angle β (hereinafter referred to as the second angle β) formed by the side of the partition layer 120B and the pixel defining layer 110B near the surface of the partition layer 120B is in the range of 30° to 80°.

[0284] For example, in the first cross section K, the angle β formed by the side of the partition layer 120B and the surface of the pixel defining layer 110B near the partition layer 120B can be 30°, 40°, 50°, 60°, 70° or 80°, etc.

[0285] In some examples, the second angle β can be adjusted by modifying the process and parameters (e.g., the etching rate of the etching process).

[0286] Understandably, when the second angle β is large, for example, greater than 90°, the material of the light-emitting functional layer 220G will cover the side of the partition layer 120B, and the partition layer 120B will lose its function of blocking the light-emitting functional layer 220G. When the thickness D9 of the partition layer 120B is small and the second angle β is small, although the side of the partition layer 120B has a certain angle, the material of the light-emitting functional layer 220G may still enter the second recessed structure V2, so that the light-emitting functional layer 220G forms a uniform and continuous film layer. Therefore, by setting the range of the second angle β to 30° to 80°, the second angle β can be kept within a suitable range, which is beneficial to improving the blocking effect of the partition layer 120A on the light-emitting functional layer 220G.

[0287] In some embodiments, as shown in FIG6B, the thickness D9 of the partition layer 120B ranges from 1μm to 2μm.

[0288] For example, the thickness D9 of the partition layer 120B can be 1.0μm, 1.2μm, 1.4μm, 1.6μm, 1.8μm or 2μm, etc.

[0289] When the thickness D9 of the partition layer 120B is large, the partition layer 120B cannot play a blocking role; when the thickness D9 of the partition layer 120B is small and the second angle β is small, although the side of the partition layer 120B has a certain angle, the material of the light-emitting functional layer 220G may still enter the second recessed structure V2, making the light-emitting functional layer 220G form a uniform and continuous film layer; therefore, by setting the thickness D9 of the partition layer 120B to be in the range of 1μm to 2μm, the thickness D9 of the partition layer 120B is relatively large, which can make the size of the second recessed structure V2 along the first direction X within a suitable range, so that it can play a blocking role, while increasing the difficulty of the material of the light-emitting functional layer 220G (see Figure 2A) filling or covering the second recessed structure V2, which is beneficial to improving the blocking effect of the partition layer 120B on the light-emitting functional layer 220G. Moreover, when the thickness D4 of the light-emitting functional layer 220G (see Figure 3) is in the range of In the case where the thickness D9 of the partition layer 120B is in the range of 1μm to 2μm, the thickness D9 of the partition layer 120B is greater than the thickness D4 of the light-emitting functional layer 220G, so that the light-emitting functional pattern 220 can be located between the plane of the surface of the partition layer 120B away from the substrate 310 and the first electrode 210.

[0290] The following provides an exemplary description of the case where the isolation structure 100 includes a pixel defining layer 110C and a plurality of isolation trenches 130.

[0291] In some embodiments, as shown in Figures 7A-7D, the display panel 300 further includes a first insulating layer 350 and a second insulating layer 360 disposed between the first electrode layer 210G and the substrate 310 (see Figure 2A), wherein the first insulating layer 350 is closer to the substrate 310 than the second insulating layer 360. The isolation structure 100 includes a pixel defining layer 110C and a plurality of isolation trenches 130. The pixel defining layer 110C defines a plurality of pixel openings Q. The plurality of isolation trenches 130 penetrate the pixel defining layer 110C and the second insulating layer 360, and extend through the first insulating layer 350; the isolation trenches 130 are located between any two adjacent pixel openings Q. In the isolation trenches 130, the second insulating layer 360 includes an edge portion 360a that extends away from the adjacent pixel opening Q relative to the first insulating layer 350.

[0292] Here, the edge portion 360a extending away from the adjacent pixel opening Q relative to the first insulating layer 350 means that the edge portion 360a is further away from the adjacent pixel opening Q relative to the first insulating layer 350. It should be noted that the adjacent pixel opening Q refers to the pixel opening Q located on the same side of the isolation trench 130 as the edge portion 360a.

[0293] In some examples, the second insulating layer 360 includes a plurality of edge portions 360a, and each edge portion 360a is provided in a one-to-one correspondence with a plurality of isolation trenches 130.

[0294] In some examples, the first insulating layer 350 is reused as a planarization layer (PLN) in the pixel driving circuit stack 320; the second insulating layer 360 is reused as a passivation layer (PVX) in the pixel driving circuit stack 320.

[0295] In some examples, the thickness of the first insulating layer 350 is greater than the thickness of the second insulating layer 360.

[0296] For example, the thickness of the second insulating layer 360 ranges from 0.1 μm to 0.5 μm, such as 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm or 0.5 μm.

[0297] In some examples, as shown in Figure 7A, the display panel 300 also includes spacers (PS) located on the side of the pixel defining layer 110C away from the second insulating layer 360, which can be used to support the mask during the vapor deposition process.

[0298] It should be understood that during the formation of the light-emitting functional layer 220G, the material of the light-emitting functional layer 220G will be distributed within the isolation trench 130, and may also be distributed on the side of the edge portion 360a away from the substrate 310.

[0299] In some examples, the material of the light-emitting functional layer 220G distributed within the isolation trench 130 is located between the plane of the edge portion 360a near the surface of the substrate 310 and the bottom surface of the isolation trench 130.

[0300] Understandably, when the isolation trench 130 penetrates the pixel defining layer 110C and the second insulating layer 360, and extends through the first insulating layer 350, the material of the light-emitting functional layer 220G is formed within the isolation trench 130; when the isolation trench 130 is located between any two adjacent pixels among the plurality of pixel openings Q, and the edge portion 360a extends away from the adjacent pixel opening Q relative to the first insulating layer 350, a third recessed structure V3 can be formed on the side of the edge portion 360a near the substrate 310 at the isolation trench 130, and the material of the light-emitting functional layer 220G cannot fill or cover the first pixel opening Q. With the three-recessed structure V3, when the light-emitting functional layer 220G is formed at the isolation trench 130, the material of the light-emitting functional layer 220G distributed on the side of the edge portion 360a away from the substrate 310 is disconnected from the material of the light-emitting functional layer 220G distributed in the isolation trench 130. That is, the light-emitting functional layer 220G can be isolated at the isolation trench 130, so that the multiple light-emitting functional patterns 220 located in the multiple pixel openings Q can be spaced apart. In this way, the lateral displacement of charge can be blocked, the phenomenon of accompanying light emission can be prevented, and the color purity of the display panel 300 can be improved.

[0301] For example, when the isolation structure includes a pixel defining layer 110C and multiple isolation trenches 130, a state reference diagram of the formation of the light-emitting functional layer 220G using a vapor deposition method is shown in Figure 7C, where the structure indicated by the reference numeral J is the vapor deposition source. As can be seen from Figure 7C, during vapor deposition, the light-emitting functional layer 220G is difficult to fill the area shown by the dashed line in the figure, thereby achieving the purpose of isolating the light-emitting functional layer 220G.

[0302] In some embodiments, as shown in FIG7B, along the first direction X, the distance D10 between the edge portion 360a and the bottom surface of the isolation trench 130 is in the range of 0.2μm to 1μm.

[0303] For example, along the first direction X, the distance D10 between the edge portion 360a and the bottom surface of the isolation trench 130 can be 0.2μm, 0.4μm, 0.6μm, 0.8μm, 0.9μm or 1.0μm, etc.

[0304] When the distance D10 between the surface of the edge portion 360a near the bottom surface of the isolation trench 130 and the bottom surface of the isolation trench 130 is in the range of 0.2μm to 1μm along the first direction X, the distance D10 between the surface of the edge portion 360a near the bottom surface of the isolation trench 130 and the bottom surface of the isolation trench 130 is relatively large. This can make the size of the third recessed structure V3 along the first direction X larger, increasing the difficulty of filling or covering the third recessed structure V3 with the material of the light-emitting functional layer 220G, which is beneficial to improving the isolation effect of the isolation trench 130 on the light-emitting functional layer 220G.

[0305] In some embodiments, as shown in FIG7B, the edge portion 360a has a size range of 0.3μm to 0.8μm along the third direction Z2, which is parallel to the substrate 310 and perpendicular to the extension direction of the edge portion 360a.

[0306] For example, the dimensions of the edge portion 360a along the third direction Z2 can be 0.3μm, 0.4μm, 0.5μm, 0.6μm, 0.7μm or 0.8μm, etc.

[0307] When the size of the edge portion 360a along the third direction Z2 is in the range of 0.3μm to 0.8μm, the size of the edge portion 360a along the third direction Z2 is relatively large, which can increase the degree of the third recessed structure V3 and increase the difficulty of the material of the light-emitting functional layer 220G filling or covering the third recessed structure V3. For example, when the light-emitting functional layer 220G is formed by vapor deposition, it is difficult for the material of the light-emitting functional layer 220G to be vapor deposited onto the third recessed structure V3. In this way, it is beneficial to improve the blocking effect of the partition layer 120A on the light-emitting functional layer 220G.

[0308] In some examples, as shown in FIG7B, the cross-section of the isolation trench 130 perpendicular to the substrate 310 is trapezoidal, and the dimension of the side of the trapezoid that is relatively far from the substrate 310 is larger than the dimension of the side that is relatively close to the substrate 310. Moreover, the angle γ formed by the sidewall of the isolation trench 130 and the surface of the edge portion 360a close to the substrate 310 ranges from 60° to 90°, for example, 60°, 65°, 70°, 75°, 80°, or 90°.

[0309] In some embodiments, as shown in Figures 6A and 7A, at least a portion of the first electrode layer 210G extends toward the substrate 310 to connect to the pixel driving circuit 320a (see Figure 2A).

[0310] The above is an exemplary description of the isolation structure 100. The following will provide an exemplary description of the film layers included in the light-emitting functional pattern 220.

[0311] In some embodiments, as shown in FIG3, each light-emitting functional pattern 220 further includes a first charge-generating layer 2221 and a second charge-generating layer 2222 in contact with each other, wherein the first charge-generating layer 2221 is closer to the substrate 310 than the second charge-generating layer 2222. A third light-emitting layer 221C is located between the first charge-generating layer 2221 and the substrate 310, and the first light-emitting layer 221A and the second light-emitting layer 221D are located between the second charge-generating layer 2222 and the second electrode layer 230G.

[0312] Through the first charge generation layer 2221 and the second charge generation layer 2222, the first light-emitting layer 221A, the second light-emitting layer 221D and the third light-emitting layer 221C can be connected sequentially in the vertical direction (e.g., the first direction X) of the light-emitting surface. Moreover, the first charge generation layer 2221 and the second charge generation layer 2222 not only serve to connect the light-emitting layers (including the first light-emitting layer 221A, the second light-emitting layer 221D, and the third light-emitting layer 221C) in the light-emitting device 200, but also help to improve the generation efficiency of charge (holes or electrons). For example, the first charge generation layer 2221 can inject electrons into the film layer located on its side close to the substrate 310, and then inject electrons into the third light-emitting layer 221C; the second charge generation layer 2222 can inject holes into the film layer located on its side away from the substrate 310, and then inject holes into the first light-emitting layer 221A and the second light-emitting layer 221D. Therefore, the first charge generation layer 2221 and the second charge generation layer 2222 can have a significant impact on the performance of the light-emitting device 200.

[0313] For example, the thickness of the first charge generation layer 2221 can be 5nm to 25nm, such as 5nm, 10nm, 15nm, 22nm or 25nm.

[0314] For example, the first charge generation layer 2221 described above can also be referred to as an N-type charge generation layer NCGL. The material of the first charge generation layer 2221 can be an electronic material, such as an electronic material containing phenanthroline or phosphoxy groups. In some examples, the first charge generation layer 2221 further includes a dopant, which can be any one or a combination of alkali metals, alkaline earth metals, alkali metal oxides, and alkaline earth metal oxides. Among them, alkali metals are, for example, lithium (Li), sodium (Na), potassium (K), or cesium (Cs), and alkaline earth metals are, for example, magnesium (Mg), strontium (Sr), barium (Ba), or radium (Ra). The material of the first charge generation layer 2221 may also include ytterbium (Yb). For example, the material of the first charge generation layer 2221 can include a material with the structure shown in the following formula.

[0315] For example, the thickness of the second charge generation layer 2222 can be 5nm to 15nm, such as 5nm, 7nm, 10nm, 13nm or 15nm.

[0316] For example, the second charge generation layer 2222 described above can also be referred to as a P-type charge generation layer PCGL. The material of the second charge generation layer 2222 can be a hole-type material, such as N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) or N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), etc. In some examples, the second charge generation layer 2222 contains a dopant, such as 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (HATCN) or 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (F4TCNQ), etc. For example, the material of the second charge generation layer 2222 may include a material with a structure as shown in the following three formulas; wherein the material represented by the third structure belongs to the triaxial compound class.

[0317] It should be noted that the hole-type material in the second charge generation layer 2222 may be the same as or different from the material of the film layer (such as the first hole transport layer and the second hole transport layer described below) that performs hole transport function in the light-emitting device 200.

[0318] In some embodiments, as shown in FIG3, the surface of the second charge generating layer 2222 near the substrate 310 (see FIG2A) has a sixth distance L6 between it and the surface of the third light-emitting layer 221C near the substrate 310. The surface of the second charge generating layer 2222 near the substrate 310 has a seventh distance L7 between it and the surface of the second light-emitting layer 221D away from the substrate 310. The ratio of the sixth distance L6 to the seventh distance L7 ranges from 0.5 to 0.8.

[0319] That is, the sixth distance L6 and the seventh distance L7 satisfy the following:

[0320] For example, the ratio of the sixth distance L6 to the seventh distance L7 can be 0.50, 0.55, 0.61, 0.65, 0.70, 0.75 or 0.8, etc.

[0321] On the one hand, when the ratio of the sixth distance L6 to the seventh distance L7 is in the range of 0.5 to 0.8, the first light-emitting layer 221A of the first light-emitting device 200A and the second light-emitting layer 221D of the second light-emitting device 200D can be located in the microcavity enhancement region within the same cycle, and the third light-emitting layer 221C of the third light-emitting device 200C can be located in the microcavity enhancement region of the next cycle. A strong microcavity effect can be formed in the first light-emitting device 200A, the second light-emitting device 200D and the third light-emitting device 200C, which can optimize the spectrum emitted by the display panel 300 and improve the light extraction efficiency of the display panel 300. On the other hand, when the ratio of the sixth distance L6 to the seventh distance L7 is in the range of 0.5 to 0.8, the ratio of the sixth distance L6 to the seventh distance L7 is within a suitable range, so that the charge carriers transferred from the second charge generation layer 2222 to the first light-emitting layer 221A and / or the second light-emitting layer 221D are relatively balanced with the charge carriers transferred from the first charge generation layer 2221 to the third light-emitting layer 221C. This is beneficial to the recombination of excitons in the first light-emitting layer 221A, the second light-emitting layer 221D and the third light-emitting layer 221C, which can improve the efficiency and lifespan of the display panel 300.

[0322] In some embodiments, the material of the first charge generation layer 2221 includes a fifth host material H2 and a fourth doped material; the mass percentage of the fourth doped material in the first charge generation layer 2221 is less than the mass percentage of the fifth host material H2. The fifth host material H2 is selected from any one of the structures shown in the following general formula (III).

[0323] Among them, X3, X4, X5, and X6 may be the same or different, and are independently selected from C(R). d C(R) and N; and at least two of X3, X4, X5, and X6 are N. d ) is for R d Replaced carbon.

[0324] Ar5, Ar6, Ar7, and Ar8 may be the same or different, and are independently selected from hydrogen, deuterium, tritium, halogen, cyano, nitro, substituted or unsubstituted C6-C60 aryl, substituted or unsubstituted C3-C60 alicyclic, substituted or unsubstituted C6-C60 aromatic fused ring, substituted or unsubstituted C1-C50 alkyl, substituted or unsubstituted C2-C20 alkenyl, substituted or unsubstituted C2-C20 alkynyl. The substituted or unsubstituted C1-C30 alkoxy group, substituted or unsubstituted C6-C30 aryloxy group, substituted or unsubstituted C3-C60 alkylsilyl group, substituted or unsubstituted C18-C60 arylsilyl group, substituted or unsubstituted C8-C60 alkylarylsilyl group, and substituted or unsubstituted C2-C60 heterocyclic group; and the heterocyclic group comprises at least one of O, N, S, Si, and P. Wherein, O is oxygen, N is nitrogen, S is sulfur, Si is silicon, and P is phosphorus.

[0325] R d It is selected from hydrogen, deuterium, substituted or unsubstituted C1-C60 alkyl, substituted or unsubstituted C2-C60 alkenyl, substituted or unsubstituted C2-C60 alkynyl, substituted or unsubstituted C1-C60 alkoxy, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C1-C10 heterocyclic alkyl, substituted or unsubstituted C3-C10 cycloalkenyl, substituted or unsubstituted C1-C10 heterocyclic alkenyl, substituted or unsubstituted C6-C60 aryl, substituted or unsubstituted C6-C60 aryloxy, substituted or unsubstituted C6-C60 arylthio, substituted or unsubstituted C1-C60 heteroaryl, substituted or unsubstituted monovalent nonaromatic condensed polycyclic group and substituted or unsubstituted monovalent nonaromatic condensed heteropolycyclic group.

[0326] Here, Cx refers to an alkyl group containing x carbon (C) atoms, where x is a positive integer, and the same applies below. For the understanding of other groups such as Cx aryl and Cx heteroaryl, please refer to the above content, which will not be repeated here. Furthermore, phenyl refers to the group remaining after removing a hydrogen atom from one carbon atom of the benzene ring. For the understanding of other groups such as aryl, heteroaryl, and alkyl, please refer to the above content, which will not be repeated here.

[0327] For example, Ar5, Ar6, Ar7, or Ar8 are selected from substituted or unsubstituted C6-C12 aryl groups, substituted or unsubstituted C6-C18 aryl groups, substituted or unsubstituted C6-C24 aryl groups, substituted or unsubstituted C6-C42 aryl groups, substituted or unsubstituted C3-C6 alicyclic groups, substituted or unsubstituted C3-C9 alicyclic groups, substituted or unsubstituted C3-C12 alicyclic groups, substituted or unsubstituted C3-C20 alicyclic groups, substituted or unsubstituted C6-C12 fused aromatic ring groups, substituted or unsubstituted C6-C18 fused aromatic ring groups, substituted or unsubstituted C6-C24 fused aromatic ring groups, substituted or unsubstituted... Substituted C6–C30 aromatic fused ring groups, substituted or unsubstituted C1–C6 alkyl groups, substituted or unsubstituted C1–C8 alkyl groups, substituted or unsubstituted C1–C12 alkyl groups, substituted or unsubstituted C1–C20 alkyl groups, substituted or unsubstituted C2–C6 alkenyl groups, substituted or unsubstituted C2–C8 alkenyl groups, substituted or unsubstituted C2–C12 alkenyl groups, substituted or unsubstituted C2–C14 alkenyl groups, substituted or unsubstituted C2–C6 alkynyl groups, substituted or unsubstituted C2–C8 alkynyl groups, substituted or unsubstituted C2–C12 alkynyl groups, substituted or unsubstituted C2–C14 alkynyl groups, substituted or unsubstituted C1–C6 alkenyl groups. Alkoxy groups, substituted or unsubstituted C1-C10 alkoxy groups, substituted or unsubstituted C1-C15 alkoxy groups, substituted or unsubstituted C1-C20 alkoxy groups, substituted or unsubstituted C6-C12 aryloxy groups, substituted or unsubstituted C6-C18 aryloxy groups, substituted or unsubstituted C6-C24 aryloxy groups, substituted or unsubstituted C3-C6 alkylsilyl groups, substituted or unsubstituted C3-C10 alkylsilyl groups, substituted or unsubstituted C3-C15 alkylsilyl groups, substituted or unsubstituted C3-C20 alkylsilyl groups, substituted or unsubstituted C18-C60 arylsilyl groups, substituted or unsubstituted C Any one of the following: 18–C24 arylsilyl groups, substituted or unsubstituted C18–C30 arylsilyl groups, substituted or unsubstituted C18–C36 arylsilyl groups, substituted or unsubstituted C8–C12 alkylarylsilyl groups, substituted or unsubstituted C8–C16 alkylarylsilyl groups, substituted or unsubstituted C8–C20 alkylarylsilyl groups, substituted or unsubstituted C8–C24 alkylarylsilyl groups, substituted or unsubstituted C2–C6 heterocyclic groups, substituted or unsubstituted C2–C10 heterocyclic groups, substituted or unsubstituted C2–C14 heterocyclic groups, and substituted or unsubstituted C2–C20 heterocyclic groups.

[0328] For example, R dFor example, selected from substituted or unsubstituted C1-C5 alkyl groups, substituted or unsubstituted C1-C8 alkyl groups, substituted or unsubstituted C1-C10 alkyl groups, substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C2-C6 alkenyl groups, substituted or unsubstituted C2-C10 alkenyl groups, substituted or unsubstituted C2-C14 alkenyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C6 alkynyl groups, and substituted or unsubstituted C2-C8 alkenyl groups. Alkynyl, substituted or unsubstituted C2-C10 alkynyl, substituted or unsubstituted C2-C15 alkynyl, substituted or unsubstituted C1-C6 alkoxy, substituted or unsubstituted C1-C10 alkoxy, substituted or unsubstituted C1-C15 alkoxy, substituted or unsubstituted C1-C20 alkoxy, substituted or unsubstituted C3-C6 cycloalkyl, substituted or unsubstituted C3-C8 cycloalkyl, substituted or unsubstituted C1-C5 heterocyclic alkyl, substituted or unsubstituted Heterocyclic alkyl groups of C1–C8, substituted or unsubstituted cycloalkenyl groups of C3–C6, substituted or unsubstituted cycloalkenyl groups of C3–C8, substituted or unsubstituted heterocyclic alkenyl groups of C1–C4, substituted or unsubstituted heterocyclic alkenyl groups of C1–C8, substituted or unsubstituted aryl groups of C6–C12, substituted or unsubstituted aryl groups of C6–C18, substituted or unsubstituted aryl groups of C6–C24, substituted or unsubstituted aryl groups of C6–C42, and substituted or unsubstituted aryloxy groups of C6–C12. The following are all of the following: substituted or unsubstituted C6-C18 aryloxy groups, substituted or unsubstituted C6-C24 aryloxy groups, substituted or unsubstituted C6-C12 arylthio groups, substituted or unsubstituted C6-C18 arylthio groups, substituted or unsubstituted C6-C24 arylthio groups, substituted or unsubstituted C6-C12 heteroaryl groups, substituted or unsubstituted C6-C18 heteroaryl groups, substituted or unsubstituted C6-C24 heteroaryl groups, and substituted or unsubstituted C6-C42 heteroaryl groups.

[0329] It should be noted that when Ar5, Ar6, Ar7, and Ar8 are selected from any one of the following: substituted C6-C60 aryl, substituted C3-C60 alicyclic, substituted C6-C60 aromatic fused-ring, substituted C1-C50 alkyl, substituted C2-C20 alkenyl, substituted C2-C20 alkynyl, substituted C1-C30 alkoxy, substituted C6-C30 aryloxy, substituted C3-C60 alkylsilyl, substituted C18-C60 arylsilyl, substituted C8-C60 alkylarylsilyl, and substituted C2-C60 heterocyclic, and / or, R dWhen the substituent is selected from any of the following: substituted C1-C60 alkyl, substituted C2-C60 alkenyl, substituted C2-C60 alkynyl, substituted C1-C60 alkoxy, substituted C3-C10 cycloalkyl, substituted C1-C10 heterocyclic alkyl, substituted C3-C10 cycloalkenyl, substituted C1-C10 heterocyclic alkenyl, substituted C6-C60 aryl, substituted C6-C60 aryloxy, substituted C6-C60 arylthio, substituted C1-C60 heteroaryl, substituted monovalent non-aromatic condensed polycyclic, and substituted monovalent non-aromatic condensed heteropolycyclic, no restrictions are placed on the type and number of substituents.

[0330] For example, substituents of Ar5, Ar6, Ar7 or Ar8, and / or, R d The substituents can be any one of the following: C1-C4 alkyl, C1-C6 alkyl, C1-C10 alkyl, C6-C12 aryl, C6-C18 aryl, C6-C24 aryl, C6-C12 heteroaryl, C6-C18 heteroaryl, and C6-C24 heteroaryl.

[0331] Understandably, when at least two of X3, X4, X5, and X6 are N, the structure represented by general formula (III) is a heterocyclic compound. Firstly, the heterocyclic compound represented by the structure shown in general formula (III) has a lower lowest unoccupied molecular orbital energy level (which can also be understood as a deeper lowest unoccupied molecular orbital energy level), which can reduce the energy level barrier at the interface between the second charge generation layer 2222 and the first charge generation layer 2221 (hereinafter referred to as the first interface), reducing the accumulation of charge carriers caused by the energy level barrier at the first interface, and preventing material degradation at the first interface. Thus, the lifespan of the display panel 300 can be improved. Secondly, the heterocyclic compound represented by the structure shown in general formula (III) has sp2 hybridized nitrogen atoms, which can give the fifth host material H2 excellent electron transport capabilities, enabling the second charge generation layer to generate more electrons. A pin structure is formed between layer 2222 and the first charge-generating layer 2221, generating an electron flow that allows electrons to be rapidly transported to the third light-emitting layer 221C to achieve radiative emission, thereby reducing the driving voltage of the display panel 300. Thirdly, the sp2-hybridized nitrogen atoms possess lone pairs of electrons, which can form complexes with the fourth doping material (e.g., a metal compound). This can suppress the crystallization of the fifth host material H2, controlling the crystallization at the interface (hereinafter referred to as the second interface) between the first charge-generating layer 2221 and the adjacent film layer (e.g., the second electron transport functional layer described in detail below), resulting in a more uniform morphology at the second interface. Secondly, it can increase the electron injection capability of the first charge-generating layer 2221, improving charge flow in the light-emitting device 200 and reducing the driving voltage of the display panel 300. Therefore, when the fifth host material H2 is selected from any of the structures shown in general formula (III), the luminous efficiency and lifespan of the display panel 300 can be improved, and the driving voltage of the display panel 300 can be reduced.

[0332] It should be understood that when the fifth main material H2 includes a structure selected from the general formula (III), the first charge generation layer 2221 can also be called the electron generation layer. In this case, the second electrode 230 is the anode and the first electrode 210 is the cathode.

[0333] In some examples, when X3 and X4 are nitrogen, the structural formula of the fifth host material H2 can be as shown below.

[0334] In some examples, when X5 and X6 are nitrogen, the structural formula of the fifth host material H2 can be as shown below.

[0335] It should be noted that the structural formulas listed above are examples of the structures of the fifth main material H2, and not restrictions on the fifth main material H2. Moreover, (H2-x) in the above structural formulas is a suffix for each structural formula, and is not part of the structural formula itself, where x takes a positive integer.

[0336] In some embodiments, the fourth doping material includes one or any combination of alkali metals, alkaline earth metals, transition metals, alkali metal compounds, alkaline earth metal compounds, and transition metal compounds.

[0337] Alkali metals include lithium (Li), sodium (Na), potassium (K), or cesium (Cs), while alkaline earth metals include magnesium (Mg), strontium (Sr), barium (Ba), or radium (Ra).

[0338] Understandably, on the one hand, through the above-mentioned configuration, the fourth doping material can perform N-type doping on the fifth host material H2, which can improve the electron injection capability of the first charge generation layer 2221, improve the charge flow in the light-emitting device 200, and reduce the driving voltage of the display panel 300; on the other hand, through the above-mentioned configuration, the fourth doping material can form a complex with the fifth host material H2, which can make the morphology at the second interface more uniform, and at the same time reduce the driving voltage of the display panel 300.

[0339] In some embodiments, the mass percentage of the fourth doped material in the material of the first charge generation layer 2221 is greater than or equal to 0.5% and less than or equal to 3%.

[0340] For example, the mass percentage of the fourth doped material in the material of the first charge generation layer 2221 can be 0.5%, 0.8%, 1.0%, 1.5%, 2.0%, 2.5%, or 3.0%, etc.

[0341] Understandably, when the mass percentage of the fourth dopant in the material of the first charge generation layer 2221 is small (e.g., less than 0.5%), the improvement in electron injection performance of the first charge generation layer 2221 by the fourth dopant is minimal; simultaneously, it causes carrier accumulation at the interface, leading to degradation of the interface material and resulting in a poor lifetime for the light-emitting device 200. By adjusting the above settings, the mass percentage of the fourth dopant in the material of the first charge generation layer 2221 can be kept within a suitable range, thereby improving the electron injection performance of the first charge generation layer 2221.

[0342] In some embodiments, the second electrode layer 230G is a cathode layer, and the first electrode layer 210G is an anode layer. Each light-emitting functional pattern 220 further includes a first electron transport functional layer 223 and a first hole transport functional layer 224. The first electron transport functional layer 223 is located between the second light-emitting layer 221D and the second electrode layer 230G. The first hole transport functional layer 224 is located between the first light-emitting layer 221D and the second charge-generating layer 2222. The ratio of the thickness L8 of the first electron transport functional layer 223 to the sum L9 of the thicknesses of the first hole transport functional layer 224 and the second charge-generating layer 2222 ranges from 1.1 to 1.5.

[0343] That is, the thickness L8 of the first electron transport functional layer 223 and the sum L9 of the thicknesses of the first hole transport functional layer 224 and the second charge generation layer 2222 satisfy the following:

[0344] For example, the ratio of the thickness L8 of the first electron transport functional layer 223 to the sum L9 of the thicknesses of the first hole transport functional layer 224 and the second charge generation layer 2222 can be 1.10, 1.15, 1.20, 1.28, 1.30, 1.35, 1.40 or 1.50.

[0345] When the ratio of the thickness L8 of the first electron transport functional layer 223 to the sum L9 of the thicknesses of the first hole transport functional layer 224 and the second charge generation layer 2222 is between 1.1 and 1.5, on the one hand, the first light-emitting layer 221A of the first light-emitting device 200A and the second light-emitting layer 221D of the second light-emitting device 200D can be located in the same period of the microcavity enhancement region, forming a strong microcavity effect in both the first light-emitting device 200A and the second light-emitting device 200D, which can optimize the spectrum emitted by the display panel 300 and improve the light extraction efficiency of the display panel 300. On the other hand, if the thickness L8 of the first electron transport functional layer 223 is greater than the sum L9 of the thicknesses of the first hole transport functional layer 224 and the second charge generation layer 2222, electrons and holes can recombine in the first light-emitting layer 221A and the second light-emitting layer 221D, which can improve the efficiency and lifespan of the display panel 300.

[0346] In some embodiments, the display panel 300 further includes a second electron transport functional layer 225 and a second hole transport functional layer 226. The second electron transport functional layer 225 is located between the first charge generation layer 2221 and the third light-emitting layer 221C. The second hole transport functional layer 226 is located on the side of the third light-emitting layer 221C away from the second electron transport functional layer 225. The first electron transport functional layer 223 includes an electron injection layer 2231, a first electron transport layer 2232, and a first hole blocking layer 2233 stacked along a direction away from the second electrode layer 230G. The first hole transport functional layer 224 includes a first electron blocking layer 2241 and a first hole transport layer 2242 stacked along a direction away from the first light-emitting layer 221A. The second electron transport functional layer 225 includes a second electron transport layer 2251 and a second hole blocking layer 2252 stacked along a direction away from the first charge generation layer 2221. The second hole transport functional layer 226 includes a second electron blocking layer 2261, a second hole transport layer 2262, and a hole injection layer 2263 stacked in a direction away from the third light-emitting layer 221C.

[0347] By setting up the hole injection layer 2263, the hole transport layer (including the second hole transport layer 2262 and the first hole transport layer 2242), the electron blocking layer (including the second electron blocking layer 2261 and the first electron blocking layer 2241), the electron injection layer 2231, the electron transport layer (including the second electron transport layer 2251 and the first electron transport layer 2232), and the hole blocking layer (including the second hole blocking layer 2252 and the first hole blocking layer 2233), it is equivalent to setting transition steps between the anode and the light-emitting layer (including the first light-emitting layer 221A, the second light-emitting layer 221D and the third light-emitting layer 221C), and between the cathode and the light-emitting layer, reducing the potential barrier height that carrier transitions need to overcome, and thus making the luminous efficiency higher.

[0348] Specifically, through the above configuration, the first electron transport functional layer 223 can be used to improve the electron transport performance of the second charge generation layer 2222 on the side away from the substrate 310, and the first hole transport functional layer 224 can be used to improve the hole transport performance of the second charge generation layer 2222 on the side away from the substrate 310, thereby achieving efficient electron generation, effective electron injection, and rapid electron transport on the side of the second charge generation layer 2222 away from the substrate 310; the second electron transport functional layer 225 can be used to improve the electron transport performance of the first charge generation layer 2221 on the side close to the substrate 310, and the second hole transport functional layer 226 can be used to improve the electron transport performance of the first charge generation layer 2221 on the side close to the substrate 310, thereby achieving efficient electron generation, effective electron injection, and rapid electron transport on the side of the first charge generation layer 2221 close to the substrate 310.

[0349] Exemplarily, the hole injection layer 2263 can be configured to reduce the hole injection barrier and improve the hole injection efficiency. Exemplarily, the hole transport layer (including the second hole transport layer 2262 and the first hole transport layer 2242) can be configured to transport holes. Exemplarily, the electron blocking layer (including the second electron blocking layer 2261 and the first electron blocking layer 2241), also known as the light-emitting auxiliary layer, can be configured to confine excitons within the light-emitting layer (including one or more of the first light-emitting layer 221A, the second light-emitting layer 221D, and the third light-emitting layer 221C), preventing exciton leakage to both sides of the light-emitting layer and causing efficiency loss. The electron blocking layer also has good hole transport characteristics.

[0350] For example, the material of the hole injection layer 2263 can be an inorganic oxide, such as molybdenum oxide, titanium oxide, vanadium oxide, rhenium oxide, ruthenium oxide, chromium oxide, zirconium oxide, hafnium oxide, tantalum oxide, silver oxide, tungsten oxide, or manganese oxide; or, the material of the hole injection layer 2263 can also be a dopant containing a strong electron-withdrawing material, such as 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (F4TCNQ). 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (HATCN) or pyrazolo[2,3-F][1,10]phenanthroline-2,3-dianitronitrile (PPDN); or, the material of the hole injection layer 2263 can also be a material obtained by p-type doping of the hole transport layer material, and the process for forming the hole injection layer 2263 is, for example, by co-evaporating the hole transport layer material with the p-type dopant. The structural formulas of F4TCNQ, HATCN, and PPDN are shown below.

[0351] For example, the materials of the second hole transport layer 2262 and / or the first hole transport layer 2242 have good hole transport characteristics and can be aromatic amine materials or carbazole materials, such as N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB), 4,4',4'-tris(carbazole-9-yl)triphenylamine (TCTA), 4,4'-cyclohexylbis[N,N-di( [4-Methylphenyl)aniline] (TAPC), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), (9-phenylfluorene-9-yl)triphenylamine (BAFLP), or bis[n-(9,9-dimethylfluorene-2-yl)-n-phenylamino]biphenyl (DFLDPBi), etc. The structural formulas of NPB, TCTA, and TAPC are shown below.

[0352] For example, the materials of the second electron blocking layer 2261 and / or the first electron blocking layer 2241 have good hole transport characteristics and can be aromatic amine materials or carbazole materials, such as 4,4'-bis(9-carbazole)biphenyl (CBP) or 9-phenyl-3-[4-(10-phenyl-9-anthrayl)phenyl]-9h-carbazole (PCzPA), etc.

[0353] For example, the material of the electron injection layer 2231 can be an alkali metal or a metal, such as lithium fluoride (LiF), ytterbium (Yb), magnesium (Mg), calcium (Ca), or a compound of the above metals.

[0354] Exemplarily, the materials of the electron transport layer (including the second electron transport layer 2251 and the first electron transport layer 2232) and the hole blocking layer (including the second hole blocking layer 2252 and the first hole blocking layer 2233) can be aromatic heterocyclic compounds, such as imidazole derivatives, pyrimidine derivatives, azine derivatives, compounds containing a nitrogen-containing six-membered ring structure, or compounds having phosphine oxide substituents on the heterocycle. Among these, imidazole derivatives are, for example, benzimidazole derivatives, imidazopyridine derivatives, or benzimidazole-phenanthridine derivatives; azine derivatives are, for example, triazine derivatives; and compounds containing a nitrogen-containing six-membered ring structure are, for example, quinoline derivatives, isoquinoline derivatives, or phenanthreneroline derivatives. In some examples, the electron transport layer (including the second electron transport layer 2251 and the first electron transport layer 2232) and the hole blocking layer (including the second hole blocking layer 2252 and the first hole blocking layer 2233) are made of 2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole](OXD-7) or 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H- Examples of materials that can be used include 1,2,4-triazole (TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenyl)-1,2,4-triazole (p-EtTAZ), 4,7-diphenyl-1,10-phenanthroline (BPhen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), or 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi). Exemplarily, the material of the electron transport layer may include materials with structures as shown in the following three formulas.

[0355] In some examples, the thickness of the electron injection layer 2231 is 1 nm to 15 nm; for example, 1 nm, 3 nm, 5 nm, 9 nm, 12 nm or 15 nm.

[0356] In some examples, the thickness of the first electron transport layer 2232 is 20nm to 100nm; for example, 20nm, 40nm, 50nm, 70nm, 90nm or 100nm.

[0357] In some examples, the thickness of the first hole blocking layer 2233 is 5nm to 15nm; for example, 5nm, 7nm, 9nm, 11nm, 13nm or 15nm.

[0358] In some examples, the thickness of the first electron blocking layer 2241 is 2nm to 15nm; for example, 2nm, 5nm, 7nm, 9nm, 11nm or 15nm.

[0359] In some examples, the thickness D12 of the first hole transport layer 2242 is 10nm to 50nm; for example, 10nm, 20nm, 24nm, 30nm, 40nm or 50nm.

[0360] In some examples, the thickness of the second electron transport layer 2251 is 10 nm to 100 nm; for example, 10 nm, 30 nm, 50 nm, 70 nm, 90 nm or 100 nm.

[0361] In some examples, the thickness of the second hole blocking layer 2252 is 5nm to 15nm; for example, 5nm, 7nm, 9nm, 12nm, 14nm or 15nm.

[0362] In some examples, the thickness of the second electron blocking layer 2261 is 2nm to 20nm; for example, 2nm, 5nm, 8nm, 10nm, 15nm or 20nm.

[0363] In some examples, the thickness D11 of the second hole transport layer 2262 is 5nm to 120nm; for example, 5nm, 8nm, 20nm, 40nm, 60nm, 80nm or 120nm.

[0364] In some examples, the thickness of the hole injection layer 2263 is 5nm to 30nm; for example, 5nm, 10nm, 15nm, 20nm, 25nm or 30nm.

[0365] It should be understood that when the light-emitting functional pattern 220 includes a first electron transport functional layer 223, a first hole transport functional layer 224, a second electron transport functional layer 225, and a second hole transport functional layer 226, the first electron transport functional layer 223, the first hole transport functional layer 224, the first light-emitting layer 221A, and the second light-emitting layer 221D can be referred to as a first stack structure (depending on the light emission type of the first light-emitting layer 221A and the second light-emitting layer 221D, it can also be referred to as a fluorescent stack structure or a phosphorescent stack structure), and the second electron transport functional layer 225, the second hole transport functional layer 226, and the third light-emitting layer 221C can be referred to as a second stack structure (depending on the light emission type of the third light-emitting layer 221C, it can also be referred to as a fluorescent stack structure or a phosphorescent stack structure). The charge carriers of the first charge generation layer 2221 need to be transferred to the second stack structure, and the charge carriers of the second charge generation layer 2222 need to be transferred to the first stack structure to achieve normal light emission of the light-emitting device 200. Therefore, it is necessary to match the physical properties of the first charge generation layer 2221, the second stack structure, the second charge generation layer 2222, and the different functional layers in the first stack structure to achieve carrier transport, recombination, and radiative emission. The following will provide an exemplary description of the physical property matching between these functional layers.

[0366] In some embodiments, the material of the third light-emitting layer 221C includes a fourth host material HC and a third doped material, wherein the third doped material is a fluorescent material. The triplet energy level T1(HBL2) of the material of the second hole-blocking layer 2252 is greater than the triplet energy level T1(HC) of the fourth host material. That is, T1(HBL2) > T1(HC).

[0367] In some embodiments, the triplet energy level T1(EBL2) of the material of the second electron blocking layer 2262 is greater than the triplet energy level T1(HC) of the fourth host material. That is, T1(EBL2) > T1(HC).

[0368] With the above settings, when the third light-emitting layer 221C emits light (e.g., emits fluorescence), it can make full use of the effect based on the triplet-triplet annihilation (TTA) mechanism, thereby improving the utilization rate of excitons in the third light-emitting layer 221C and improving the luminous efficiency of the third light-emitting device 200C and the display panel 300.

[0369] In some embodiments, the absolute value of the difference between the material of the second hole-blocking layer 2252 and the lowest unoccupied molecular orbit (LUMO) energy level of the fourth host material HC is less than or equal to 0.3 eV. That is, |LUMO(HBL2)-LUMO(HC)|≤0.3 eV.

[0370] For example, the absolute value of the difference between the LUMO energy levels of the second hole blocking layer 2252 and the fourth host material can be 0, 0.1 eV, 0.15 eV, 0.20 eV, 0.26 eV or 0.30 eV, etc.

[0371] With the above configuration, the absolute value of the difference between the material of the second hole blocking layer 2252 and the LUMO energy level of the fourth host material HC is relatively small. This can reduce the energy level transport barrier between the second hole blocking layer 2252 and the third light-emitting layer 221C when electrons are transported, which is beneficial for electrons to be transported from the second hole blocking layer 2252 to the third light-emitting layer 221C.

[0372] In some embodiments, the absolute value of the difference between the highest occupied molecular orbital energy level of the material of the second electron blocking layer 2262 and the fourth host material HC is less than or equal to 0.3 eV. That is, |HOMO(EBL2)-HOMO(HC)|≤0.3 eV.

[0373] For example, the absolute value of the difference between the highest occupied molecular orbital energy level of the material of the second electron blocking layer 2262 and the fourth host material HC can be 0, 0.1 eV, 0.14 eV, 0.20 eV, 0.25 eV or 0.30 eV, etc.

[0374] With the above settings, the absolute value of the difference between the material of the second electron blocking layer 2262 and the HOMO energy level of the fourth host material HC is small. This can make the difference between the material of the second electron blocking layer 2262 and the HOMO energy level of the fourth host material HC relatively small, which can reduce the energy level transport barrier between the second electron blocking layer 2262 and the third light-emitting layer 221C when holes are transported. This is beneficial for holes to be transported from the second electron blocking layer 2262 to the third light-emitting layer 221C.

[0375] In some embodiments, the absolute value of the difference between the highest occupied molecular orbital energy levels of the material of the second charge generation layer 2222 and the material of the first hole transport layer 2242 is less than or equal to 0.3 eV. That is, |HOMO(PCGL)-HOMO(HTL1)|≤0.3 eV.

[0376] For example, the absolute value of the difference between the HOMO energy levels of the material of the second charge generation layer 2222 and the material of the first hole transport layer 2242 can be 0, 0.1 eV, 0.15 eV, 0.20 eV, 0.25 eV or 0.30 eV, etc.

[0377] With the above configuration, the absolute value of the difference between the HOMO energy levels of the material of the second charge generation layer 2222 and the material of the first hole transport layer 2242 is small. This can reduce the energy level transport barrier between the second charge generation layer 2222 and the first hole transport layer 2242 when transporting holes, which is beneficial for holes to be transported from the second charge generation layer 2222 to the first light-emitting layer 221A and the second light-emitting layer 221D.

[0378] In some embodiments, the absolute value of the difference between the lowest unoccupied molecular orbital energy levels of the materials of the first charge-generating layer 2221 and the first hole-blocking layer 2233 is less than or equal to 0.5 eV. That is, |LUMO(NCGL)-LUMO(HBL1)|≤0.5 eV.

[0379] For example, the absolute value of the difference between the LUMO energy levels of the material of the first charge generation layer 2221 and the material of the first hole blocking layer 2233 can be 0, 0.1eV, 0.2eV, 0.3eV, 0.4eV or 0.5eV, etc.

[0380] With the above configuration, the absolute value of the difference between the LUMO energy levels of the material of the first charge generation layer 2221 and the material of the first hole blocking layer 2233 is small, which can reduce the energy level transmission barrier between the first charge generation layer 2221 and the first hole blocking layer 2233 when transmitting electrons. This is beneficial for electrons to be transmitted from the first hole blocking layer 2233 to the first charge generation layer 2221, and then to the third light-emitting layer 221C.

[0381] In some embodiments, the absolute value of the difference between the lowest unoccupied molecular orbital energy levels of the materials of the first charge-generating layer 2221 and the second hole-blocking layer 2252 is less than or equal to 0.5 eV. That is, |LUMO(NCGL)-LUMO(HBL2)|≤0.5 eV.

[0382] For example, the absolute value of the difference between the LUMO energy levels of the material of the first charge generation layer 2221 and the material of the second hole blocking layer 2252 can be 0, 0.1eV, 0.2eV, 0.32eV, 0.4eV or 0.5eV, etc.

[0383] With the above configuration, the absolute value of the difference between the LUMO energy levels of the material of the first charge generation layer 2221 and the material of the second hole blocking layer 2252 is small, which can reduce the energy level transmission barrier between the first charge generation layer 2221 and the first hole blocking layer 2233 when transmitting electrons, which is beneficial for electrons to be transmitted from the first charge generation layer 2221 to the third light-emitting layer 221C.

[0384] In some embodiments, the absolute value of the difference between the highest occupied molecular orbital energy levels of the materials of the first hole transport layer 2242 and the first electron blocking layer 2241 is greater than or equal to 0.1 eV and less than or equal to 0.4 eV. That is, 0.1 eV ≤ |HOMO(HTL1) - HOMO(EBL1)| ≤ 0.4 eV.

[0385] For example, the absolute value of the difference between the HOMO energy levels of the material of the first hole transport layer 2242 and the material of the first electron blocking layer 2241 can be 0.10 eV, 0.15 eV, 0.20 eV, 0.25 eV, 0.3 eV, 0.35 eV or 0.40 eV, etc.

[0386] With the above settings, the absolute value of the difference between the HOMO energy levels of the materials of the first hole transport layer 2242 and the first electron blocking layer 2241 is small. This can reduce the energy level transport barrier between the first hole transport layer 2242 and the first electron blocking layer 2241 when transporting holes, accelerate the hole transport speed, improve the exciton yield, and improve the efficiency of the display panel 300.

[0387] In some embodiments, the absolute value of the difference between the highest occupied molecular orbital energy levels of the materials of the second hole transport layer 2262 and the second electron blocking layer 2261 is greater than or equal to 0.1 eV and less than or equal to 0.4 eV. That is, 0.1 eV ≤ |HOMO(HTL2) - HOMO(EBL2)| ≤ 0.4 eV.

[0388] For example, the absolute value of the difference between the HOMO energy levels of the material of the second hole transport layer 2262 and the material of the second electron blocking layer 2261 can be 0.10 eV, 0.15 eV, 0.22 eV, 0.25 eV, 0.3 eV, 0.35 eV or 0.40 eV, etc.

[0389] With the above settings, the absolute value of the difference between the HOMO energy levels of the materials of the second hole transport layer 2262 and the second electron blocking layer 2261 is smaller. This can reduce the energy level transport barrier between the second hole transport layer 2262 and the second electron blocking layer 2261 when transporting holes, accelerate the hole transport speed, improve the exciton yield, and improve the efficiency of the display panel 300.

[0390] In some embodiments, the thickness D11 of the second hole transport layer 2262 is less than the thickness D12 of the first hole transport layer 2242.

[0391] The above settings facilitate the transmission of holes within the light-emitting functional pattern 220, thereby reducing the operating voltage of the light-emitting device 200 and consequently lowering the operating voltage of the display panel 300.

[0392] In some embodiments, the hole mobility of the material of the first hole transport layer 2242 is greater than the hole mobility of the material of the second hole transport layer 2262.

[0393] The above settings facilitate the transmission of holes within the light-emitting functional pattern 220, thereby reducing the operating voltage of the light-emitting device 200 and consequently lowering the operating voltage of the display panel 300.

[0394] In some embodiments, the hole mobility of the material of the second electron blocking layer 2261 is greater than or equal to the hole mobility of the material of the first electron blocking layer 2241.

[0395] The above settings facilitate the transmission of holes within the light-emitting functional pattern 220, thereby reducing the operating voltage of the light-emitting device 200 and consequently lowering the operating voltage of the display panel 300.

[0396] In some embodiments, as shown in FIG3, the material of the second charge generation layer 2222 includes a sixth host material and a fifth dopant material G1. The sixth host material is a hole-type material. The fifth dopant material G1 is configured to p-type dope the sixth host material. The mass percentage of the fifth dopant material G1 in the material of the second charge generation layer 2222 is less than the mass percentage of the sixth host material in the material of the second charge generation layer 2222.

[0397] It should be understood that when the sixth main material is a hole-type material, the second charge generation layer 2222 can be a hole generation layer. In this case, the second electrode layer 230G is a cathode layer and the first electrode 210 is an anode layer.

[0398] Understandably, when the fifth doping material G1 performs P-type doping on the sixth host material, the fifth doping material G1 can be used to improve the hole injection capability of the material of the second charge generation layer 2222. In this way, the second charge generation layer 2222 can be used to effectively inject holes into the first light-emitting layer 221A and the second light-emitting layer 221D, which can increase the hole injection amount in the first light-emitting layer 221A and the second light-emitting layer 221D, which is beneficial to improving the exciton recombination rate and thus improving the luminous efficiency of the display panel 300.

[0399] In some embodiments, as shown in FIG3, the material of the hole injection layer 2263 includes a sixth host material and a fifth dopant material G1. The sixth host material is a hole transport material. The fifth dopant material G1 is configured to p-type dope the sixth host material. The mass percentage of the fifth dopant material G1 in the material of the hole injection layer 2263 is less than the mass percentage of the sixth host material in the material of the hole injection layer 2263.

[0400] Understandably, when the fifth doping material G1 is p-type doped with the sixth host material, the hole injection capability of the hole injection layer 2263 can be improved by using the fifth doping material G1. In this way, holes can be effectively injected into the third light-emitting layer 221C by using the hole injection layer 2263, which can increase the hole injection amount in the third light-emitting layer 221C, which is beneficial to improving the exciton recombination rate and thus improving the luminous efficiency of the display panel 300.

[0401] For example, in the second charge generation layer 2222 or hole injection layer 2263, the material of the sixth host material can be N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) or N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), etc.

[0402] In some examples, the sixth host material and the fifth doped material G1 can be co-evaporated to form a second charge generation layer 2222 or a hole injection layer 2263.

[0403] It should be noted that when both the material of the second charge generation layer 2222 and the material of the hole injection layer 2263 include the sixth host material and the fifth dopant material G1, the sixth host material of the second charge generation layer 2222 and the sixth host material of the hole injection layer 2263 may be the same or different; there are no restrictions here.

[0404] In some embodiments, the fifth doped material G1 is selected from any of the structures shown in the following general formula (I).

[0405] Where A is any one of the three-membered ring, four-membered ring, five-membered ring and six-membered ring.

[0406] Here, A can be a carbon ring or a carbon heterocycle containing carbon atoms and heteroatoms. For example, when A is a three-membered ring, it can be a three-membered carbon ring or a three-membered carbon heterocycle containing carbon atoms and heteroatoms (e.g., nitrogen (N), silicon (Si), or germanium (Ge). Similarly, when A is a four-membered ring, it can be a four-membered carbon ring or a four-membered carbon heterocycle containing carbon atoms and heteroatoms (e.g., nitrogen (N), silicon (Si), or germanium (Ge)). Likewise, when A is a five-membered ring, it can be a five-membered carbon ring or a five-membered carbon heterocycle containing carbon atoms and heteroatoms (e.g., nitrogen (N), silicon (Si), or germanium (Ge)). Finally, when A is a six-membered ring, it can be a six-membered carbon ring or a six-membered carbon heterocycle containing carbon atoms and heteroatoms (e.g., nitrogen (N), silicon (Si), or germanium (Ge)).

[0407] It should be noted that when A is a four-membered ring, a five-membered ring, or a six-membered ring, as shown in general formula (I), three atoms in the ring are connected to double bonds; there are no restrictions on the connecting bonds and connecting groups of atoms in other rings that are not connected to double bonds. For example, atoms in other rings that are not connected to double bonds can be connected to double bonds or single bonds.

[0408] R1, R2, R3, R4, R5, and R6 may be the same or different, and are independently selected from any one of halogen, cyano, substituted aryl, and substituted or unsubstituted heteroaryl; and, in the case where R1, R2, R3, R4, R5, or R6 is a substituted aryl, the substituent of the aryl includes at least one electron-withdrawing group.

[0409] For example, the aryl group can be phenyl, biphenyl, naphthyl, phenanthryl, etc.; and for example, the heteroaryl group can be furanyl, pyranyl, thiophenyl or pyridyl, etc.

[0410] Here, when R1, R2, R3, R4, R5, or R6 is a substituted aryl group, the substituent of the aryl group includes at least one electron-withdrawing group. The type and number of electron-withdrawing groups are not limited here; for example, the electron-withdrawing group can be a cyano (-CN), a halogen (-F, -Cl, -Br, or -I), or a trifluoromethyl (-CF3), etc. When R1, R2, R3, R4, R5, or R6 is a substituted heteroaryl group, the type and number of substituents are not limited here.

[0411] Understandably, through the above configuration, the structure shown in general formula (I) contains electron-withdrawing groups, and the structure shown in general formula (I) contains an A ring and multiple double bonds connected thereto, which can form a conjugated system. In this way, the electron-withdrawing ability of the fifth doped material G1 can be improved, the conductivity of the fifth doped material G1 can be enhanced, and the hole injection performance of the second charge generation layer 2222 or hole injection layer 2263 can be improved. This is beneficial to the effective generation, injection and transport of charges, and can improve the luminous efficiency of the display panel 300.

[0412] In some examples, when R1, R2, R3, R4, R5, and R6 are all phenyl groups substituted with electron-withdrawing groups, the structure of the fifth doped material G1 can be as shown below.

[0413] In some embodiments, at least one of R1, R2, R3, R4, R5, and R6 is a cyano group.

[0414] Understandably, cyano groups have a strong electron-withdrawing ability. When at least one of R1, R2, R3, R4, R5, and R6 is a cyano group, the electron-withdrawing ability of the fifth dopant material G1 can be enhanced. In this way, the conductivity of the fifth dopant material G1 can be enhanced, and the hole injection performance of the second charge generation layer 2222 or the hole injection layer 2263 can be improved.

[0415] In some examples, when there are two cyano groups in R1, R2, R3, R4, R5, and R6, the structure of the fifth doped material G1 can be as shown below.

[0416] In some examples, when there are three cyano groups in R1, R2, R3, R4, R5, and R6, the structure of the fifth doped material G1 can be as shown in the following formula.

[0417] It should be noted that the structural formulas listed above are examples of the structure of the fifth doped material G1, and are not a limitation on the fifth doped material G1. Moreover, (G1-x) in the above structural formulas is a suffix for each structural formula, and is not part of the structural formula itself, where x takes a positive integer.

[0418] In some embodiments, the fifth doped material G1 is selected from any of the structures shown in the following general formula (II).

[0419] Where X1 and X2 are the same or different, and are independently selected from C(R) a ), N and Si(R) b Any one of the following. Where C(R) a ) is Ra Substituted carbon, N is nitrogen, Si(R) b ) is R b Replacement silicon.

[0420] Y1 and Y2 may be the same or different, and are independently selected from N(R). c Any one of N(R), O, and S. Where N(R) c ) is R c The nitrogen is replaced by oxygen (O) and sulfur (S).

[0421] Ar1, Ar2, Ar3, and Ar4 may be the same or different, and are independently selected from any one of halogen, cyano, substituted or unsubstituted phenyl, substituted or unsubstituted biphenyl, substituted or unsubstituted terphenyl, substituted or unsubstituted fluorenyl, substituted or unsubstituted adamantyl, and substituted or unsubstituted heteroaryl; or may be connected to adjacent groups to form substituted or unsubstituted rings.

[0422] R7, R8, R a R b and R c Whether identical or different, each is independently selected from hydrogen, deuterium, halogen, cyano, substituted or unsubstituted C3-C20 heteroaryl, substituted or unsubstituted C6-C20 aryl, substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C10 haloalkyl, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C2-C10 heterocycloalkyl, substituted or unsubstituted C1-C10 alkoxy, substituted or unsubstituted C1-C10 alkylthio, substituted or unsubstituted C6-C18 aryloxy, substituted or unsubstituted C6-C18 arylthio, substituted or unsubstituted C6-C24 phosphoxy, and substituted or unsubstituted C6-C18 alkylsulfonyl.

[0423] m and n may be the same or different, and are independently selected from 1, 2, 3, 4 and 5 respectively.

[0424] The descriptions of alkyl and alkenyl groups of Cx can be found in the above description of alkyl groups of Cx, and will not be repeated here. Furthermore, phenyl refers to the group remaining after removing a hydrogen atom from one carbon atom of the benzene ring. For the understanding of other groups such as aryl, heteroaryl, and alkyl, please refer to the above content, and will not be repeated here.

[0425] In the structure shown in general formula (II), (R x ) y It refers to the substituent R xThe quantity is y. When y is 0, it means that all the carbon atoms with substitution sites on the corresponding six-membered ring have been replaced by hydrogen atoms. When y is a positive integer greater than or equal to 1, it means that there are y R atoms connected to the corresponding six-membered ring. x Moreover, y R x It can be attached to any y substituted carbons among the six carbons on a six-membered ring; here, regarding R... x The positions of the connected carbon atoms are not restricted here. When y is a positive integer greater than 1, there are y R atoms. x They can be the same or different. Here, x is either 7 or 8, and y is either m or n.

[0426] When any one of Ar1, Ar2, Ar3, and Ar4 is selected from substituted or unsubstituted heteroaryl groups, such as furanyl, pyranyl, thiophenyl, or pyridyl, etc.

[0427] R7, R8, R a R b and R c Any of the following, for example selected from substituted or unsubstituted C3-C8 heteroaryl, C3-C12 heteroaryl, C3-C20 heteroaryl, substituted or unsubstituted C6-C12 aryl, substituted or unsubstituted C6-C18 aryl, substituted or unsubstituted C1-C5 haloalkyl, substituted or unsubstituted C1-C8 haloalkyl, substituted or unsubstituted C3-C5 cycloalkyl, substituted or unsubstituted C3-C8 cycloalkyl, substituted or unsubstituted C2-C6 heterocycloalkyl, substituted or unsubstituted C2-C8 heterocyclic The alkyl group, substituted or unsubstituted C1-C5 alkoxy group, substituted or unsubstituted C1-C8 alkoxy group, substituted or unsubstituted C1-C5 alkylthio group, substituted or unsubstituted C1-C8 alkylthio group, substituted or unsubstituted C6-C12 aryloxy group, substituted or unsubstituted C6-C12 arylthio group, substituted or unsubstituted C6-C10 phosphorooxy group, substituted or unsubstituted C6-C15 phosphorooxy group, substituted or unsubstituted C6-C20 phosphorooxy group, and substituted or unsubstituted C6-C12 alkylsulfonyl group.

[0428] When Ar1, Ar2, Ar3, and Ar4 are selected from any one of substituted phenyl, substituted biphenyl, substituted terphenyl, substituted fluorenyl, substituted adamantyl, and substituted heteroaryl, and / or R7, R8, R a R b and R cWhen the substituent is selected from any of the following: substituted C3-C20 heteroaryl, substituted C6-C20 aryl, substituted C1-C5 alkyl, substituted C1-C10 haloalkyl, substituted C3-C10 cycloalkyl, substituted C2-C10 heterocycloalkyl, substituted C1-C10 alkoxy, substituted C1-C10 alkylthio, substituted C6-C18 aryloxy, substituted C6-C18 arylthio, substituted C6-C24 phosphoxy, and substituted C6-C18 alkylsulfonyl, there are no restrictions on the type and number of substituents.

[0429] For example, Ar1, Ar2, Ar3, Ar4, R7, R8, R a R b and R c The substituents of any of them can be electron-withdrawing groups, such as cyano (-CN), halogen (-F, -Cl, -Br or -I), or trifluoromethyl (-CF3), etc.

[0430] Understandably, the IIA portion in the structure shown in general formula (II), and the substituents Ar1, Ar2, Ar3 and Ar4 connected to the IIA portion, have a certain electron-withdrawing ability; this can improve the electron-withdrawing ability of the fifth doped material G1; moreover, the IIA portion with a certain electron-withdrawing ability can form a conjugated system with the substituents Ar1, Ar2, Ar3 and Ar4, producing a conjugation effect, which can improve the electron-withdrawing ability of the fifth doped material G1. Thus, the conductivity of the fifth doped material G1 can be enhanced, and the hole injection performance of the second charge generation layer 2222 and / or hole injection layer 2263 can be improved, which is beneficial to the effective generation, injection and transport of charge, and can improve the luminous efficiency of the display panel 300.

[0431] In some examples, when X1 and X2 are nitrogen and Y1 and Y2 are oxygen, the structure of the fifth doped material G1 can be as shown in the following formula.

[0432] In some examples, when X1 and X2 are nitrogen and Y1 and Y2 are sulfur, the structure of the fifth doped material G1 can be as shown in the following formula.

[0433] In some examples, when X1 and X2 are carbon and Y1 and Y2 are oxygen, the structure of the fifth doped material G1 can be as shown in the following formula.

[0434] In some examples, when X1 and X2 are carbon and Y1 and Y2 are sulfur, the structure of the fifth doped material G1 can be as shown in the following formula.

[0435] It should be noted that the structural formulas listed above are examples of the structure of the fifth doped material G1, and are not a limitation on the fifth doped material G1. Moreover, (G1-x') in the above structural formulas are aliases for each structural formula, and are not part of the structural formula, where x takes a positive integer.

[0436] In some embodiments, the mass percentage of the fifth doped material G1 in the material of the second charge generation layer 2222 is greater than or equal to 0.5% and less than or equal to 10%.

[0437] For example, the mass percentage of the fifth doped material G1 in the material of the second charge generation layer 2222 can be 0.5%, 0.8%, 1%, 3%, 4%, 5%, 6%, 7%, 9%, or 10%, etc.

[0438] In some embodiments, the mass percentage of the fifth doped material G1 in the material of the hole injection layer 2263 is greater than or equal to 0.5% and less than or equal to 10%.

[0439] For example, the mass percentage of the fifth doped material G1 in the material of the hole injection layer 2263 can be 0.5%, 0.7%, 1%, 3%, 4%, 5%, 6%, 8%, 9%, or 10%, etc.

[0440] Understandably, when the mass percentage of the fifth dopant G1 in the materials of the second charge generation layer 2222 and / or hole injection layer 2263 is small (e.g., less than 0.5%), the improvement in hole injection performance of the second charge generation layer 2222 and / or hole injection layer 2263 by the fifth dopant G1 is small; at the same time, it will cause carriers to accumulate at the interface, resulting in the degradation of the interface material and a poor lifespan of the light-emitting device 200. Therefore, through the above settings, the mass percentage of the fifth dopant G1 in the materials of the second charge generation layer 2222 and / or hole injection layer 2263 can be kept within a suitable range, which can improve the hole injection performance of the second charge generation layer 2222 and / or hole injection layer 2263, and at the same time improve the lifespan of the display panel 300.

[0441] On the other hand, embodiments of this disclosure provide a light-emitting device 200. As shown in FIG3, the light-emitting device 200 includes a first light-emitting device 200A and a second light-emitting device 200D. Each of the first light-emitting device 200A and the second light-emitting device 200D includes a first electrode 210, a light-emitting functional layer 220G, and a second electrode 230 stacked sequentially. The first electrode 210 includes a first sub-layer 211 and a second sub-layer 212 stacked along a direction close to the light-emitting functional layer 220G. The second sub-layer 212 in the first light-emitting device 200A and the second sub-layer 212 in the second light-emitting device 200D have different thicknesses. The light-emitting functional layer 220G includes a first light-emitting layer 221A and a second light-emitting layer 221D stacked along a direction away from the first electrode 210. The light emitted by the first light-emitting layer 221A is a first color, and the light emitted by the second light-emitting layer 221D is a second color. The wavelength of the first color light is greater than the wavelength of the second color light. In this design, the surface of the first light-emitting layer 221A of the first light-emitting device 200A near the surface of the first electrode 210 is separated from the surface of the first electrode 210 away from the light-emitting functional layer 220G by a first distance L1. Similarly, the surface of the second light-emitting layer 221D of the second light-emitting device 200D near the surface of the first electrode 210 is separated from the surface of the first electrode 210 away from the light-emitting functional layer 220G by a second distance L2. The ratio of the first distance L1 to the second distance L2 ranges from 1.0 to 1.5.

[0442] Similarly, by setting the second sub-layer 212 in the first light-emitting device 200A and the second sub-layer 212 in the second light-emitting device 200D to have different thicknesses, the first light-emitting device 200A and the second light-emitting device 200D can have different optical cavity thicknesses, which can be matched with light of different wavelengths. As a result, the first color light emitted by the first light-emitting device 200A and the second color light emitted by the second light-emitting device 200D can both be emitted more due to the microcavity effect. Furthermore, by setting the ratio of the first distance L1 to the second distance L2 to be in the range of 1.0 to 1.5, the first distance L1 can be matched with the wavelength of the first color light, and the second distance L2 can be matched with the wavelength of the second color light. In this way, the first light-emitting layer 221A in the first light-emitting device 200A can be located in the microcavity enhancement region of the first light-emitting device 200A, and the second light-emitting layer 221D in the second light-emitting device 200D can be located in the microcavity enhancement region of the second light-emitting device 200D. A strong microcavity effect can be formed in both the first light-emitting device 200A and the second light-emitting device 200D, which can optimize the spectrum emitted by the display panel 300 and improve the light emission efficiency of the display panel 300.

[0443] In order to objectively evaluate the technical effects of the embodiments of this disclosure, the technical solutions provided by this disclosure will be described in detail and by way of example through the following experimental examples and comparative examples. According to the evaluation purpose of the embodiments, the following experimental examples and comparative examples are divided into a first group of experimental examples and a second group of experimental examples.

[0444] [First Group of Test Cases]

[0445] The following examples and comparative examples fabricated display panels 300 with different relationships between film thicknesses. The structure of the display panel 300 is shown in Figure 3.

[0446] For example, the method for fabricating a display panel 300 including a first light-emitting device 200A, a second light-emitting device 200D, and a third light-emitting device 200C is as follows: a substrate 310 (glass substrate) having an isolation structure 100 and a first electrode 210 is used as a back plate, and the back plate is placed in the vacuum chamber of a vacuum evaporation apparatus, and the vacuum is evacuated to 1×10⁻⁶. -5 Pa ~ 1×10 -6 After Pa, a full-surface vapor deposition method is adopted, utilizing the materials of hole injection layer 2263, second hole transport layer 2262, second electron blocking layer 2261, third light-emitting layer 221C, second hole blocking layer 2252, second electron transport layer 2251, first charge generation layer 2221, second charge generation layer 2222, first hole transport layer 2242, first electron blocking layer 2241, first light-emitting layer 221A, second light-emitting layer 221D, first hole blocking layer 2233, and the third... The materials of the electron transport layer 2232 and the electron injection layer 2231 are used to sequentially form a hole injection layer 2263, a second hole transport layer 2262, a second electron blocking layer 2261, a third light-emitting layer 221C, a second hole blocking layer 2252, a second electron transport layer 2251, a first charge generation layer 2221, a second charge generation layer 2222, a first hole transport layer 2242, a first electron blocking layer 2241, a first light-emitting layer 221A, a second light-emitting layer 221D, a first hole blocking layer 2233, a first electron transport layer 2232, and an electron injection layer 2231 on a backplate. Then, a second electrode layer 230G is formed on the side of the electron injection layer 2231 away from the backplate. Before use, the backplate is ultrasonically treated in a cleaning agent, then rinsed with deionized water, then ultrasonically treated in an acetone-ethanol mixed solvent to remove oil, and finally dried in a clean environment until moisture and solvent are removed.

[0447] The materials used in Examples 1 to 3 and Comparative Examples 1 to 6 for the hole injection layer 2263, the second hole transport layer 2262, the second electron blocking layer 2261, the third light-emitting layer 221C, the second hole blocking layer 2252, the second electron transport layer 2251, the first charge generation layer 2221, the second charge generation layer 2222, the first hole transport layer 2242, the first electron blocking layer 2241, the first light-emitting layer 221A, the second light-emitting layer 221D, the first hole blocking layer 2233, the first electron transport layer 2232, the electron injection layer 2231, and the second electrode layer 230G are the same. For example, the material of the hole injection layer 2263 in Example 1 is the same as the material of the hole injection layer 2263 in Example X and the same as the material of the hole injection layer 2263 in Comparative Example Y, where X is 2 or 3, and Y is any positive integer from 1 to 6.

[0448] The hole injection layer 2263 is made of a hole injection material with the structure shown in formula (HIL) and a hole transport material with the structure shown in formula (HTL), with a mass ratio of 5:95. The materials of the first hole transport layer 2242 and the second hole transport layer 2262 have the structure shown in formula (HTL). The materials of the first electron blocking layer 2241 have the structure shown in formula (REBL), and the materials of the second electron blocking layer 2261 have the structure shown in formula (BEBL). The materials of the first hole blocking layer 2233 and the second hole blocking layer 2252 have the structure shown in formula (HBL). The materials of the first electron transport layer 2232 and the second electron transport layer 2251 include an electron transport material with the structure shown in formula (ETL) and a doped material with the structure shown in formula (LiQ) (with a mass ratio of 1:1). The material of the electron injection layer 2231 is ytterbium (1 nm thick).

[0449] The second electrode layer 230G is made of a magnesium-silver alloy with a magnesium-silver mass ratio of 1:9. The second charge generation layer 2222 is made of a first host material with the structure shown in formula (PCGL-H) and a doped material with the structure shown in formula (D-PCGL-W), and the doping ratio of the doped material is 5%. The first charge generation layer 2221 is made of a host material with the structure shown in formula (D-NCGL-H) and a fourth doped material, ytterbium, and the doping ratio of the fourth doped material is 1%. The microcavity adjustment layer 2121 of the first light-emitting device 200A, the second light-emitting device 200D, and the third light-emitting device 200C is made of silicon oxide.

[0450] The first light-emitting layer 221A includes a host material and a first doped material with the structure shown in formula (RD); wherein the host material of the first light-emitting layer 221A includes a first material with the structure shown in formula (RH-1) and a second material with the structure shown in formula (RH-2), and the first material and the second material are premixed before evaporation. The second light-emitting layer 221D includes a host material and a second doped material with the structure shown in formula (GD); wherein the host material of the second light-emitting layer 221D includes a third material with the structure shown in formula (GH-1) and a fourth material with the structure shown in formula (GH-2), and the third material and the fourth material are premixed before evaporation. The third light-emitting layer 221C includes a fourth host material with the structure shown in formula (BH) and a third doped material with the structure shown in formula (BD).

[0451] It should be noted that (HIL), (HTL), (BEBL), (GH-1), (GH-2), (GD), (HBL), (ETL), (PCGL-H), (D-PCGL-W), (D-NCGL-H), etc. in the above structural formulas are the names of each structural formula, and are not part of the structural formula structure.

[0452] To more clearly illustrate the differences in the relationship between the film thicknesses set in the embodiments and comparative examples, Table 1 below is used to more clearly show the relationship between the film thicknesses set in the embodiments and comparative examples.

[0453] Table 1

[0454] Table 2

[0455] Table 3

[0456] It should be noted that the values ​​in Tables 1 to 3 refer to the values ​​of the corresponding relational expressions. For example, the content of the cell corresponding to the ratio of the first distance L1 to the second distance L2 in Example 1 is "1.23", which means that the ratio of the first distance L1 to the second distance L2 in Example 1 is 1.23. The meanings of the first distance L1, the second distance L2, the third distance L3, the thickness L8 of the first electron transport functional layer, and the sum of the thicknesses L9 of the first hole transport functional layer and the second charge generation layer can be found in the foregoing content and will not be repeated here.

[0457] Based on the above settings, the first light-emitting device 200A, the second light-emitting device 200D, and the third light-emitting device 200C in the display panel 300 of Examples 1 to 3 and Comparative Examples 1 to 6 are subjected to a current density of 15 mA / cm². 2Voltage (V), current efficiency (cd / A), and device lifetime were tested under the specified conditions. Device lifetime was characterized by parameter LT95. The test results are shown in Tables 4, 5, and 6 below. The data for voltage (V), current efficiency (cd / A), and device lifetime in Table 4 are based on Example 1; the data for voltage (V), current efficiency (cd / A), and device lifetime in Table 5 are based on Example 2; and the data for voltage (V), current efficiency (cd / A), and device lifetime in Table 6 are based on Example 3.

[0458] Table 4

[0459] Table 5

[0460] Table 6

[0461] Compared with Comparative Examples 1 and 2, as shown in Table 4, Example 1 exhibits relatively higher current efficiency. This is because in Example 1, the ratio of the first distance L1 to the second distance L2 is 1.23, falling within the range of 1.0 to 1.5. This allows the first light-emitting layer 221A of the first light-emitting device 200A to be located in the microcavity enhancement region of the first light-emitting device 200A, and the second light-emitting layer 221D of the second light-emitting device 200D to be located in the microcavity enhancement region of the second light-emitting device 200D. Consequently, both the first light-emitting device 200A and the second light-emitting device 200D can form a strong microcavity effect, thereby improving the current efficiency of the display panel 300.

[0462] Compared with Comparative Examples 3 and 4, as shown in Table 5, Example 2 exhibits relatively higher current efficiency. This is because in Example 2, the ratio of the second distance L2 to the third distance L3 is 1.0, falling within the range of 0.8 to 1.2. This allows the second light-emitting layer 221D of the second light-emitting device 200D to be located within the microcavity enhancement region of the second light-emitting device 200D, and the third light-emitting layer 221C of the third light-emitting device 200C to be located within the microcavity enhancement region of the third light-emitting device 200C. Consequently, both the second light-emitting device 200D and the third light-emitting device 200C can form a strong microcavity effect, thereby improving the current efficiency of the display panel 300.

[0463] Compared with Comparative Examples 5 and 6, as shown in Table 6, Example 3 exhibits relatively higher current efficiency. This is because in Example 3, the ratio of the thickness L8 of the first electron transport functional layer 223 to the sum of the thicknesses L9 of the first hole transport functional layer 224 and the second charge generation layer is 1.28, falling within the range of 1.1 to 1.5. This results in two main advantages: firstly, both the first light-emitting device 200A and the second light-emitting device 200D can form a strong microcavity effect, thereby improving the current efficiency of the display panel 300; secondly, it allows for a relatively longer electron transport path from the second electrode layer 230 side and a relatively shorter hole transport path from the first charge generation layer 2221 side, which matches the electron and hole transport rates. Consequently, electrons and holes can recombine within the first light-emitting layer 221A and the second light-emitting layer 221D, improving the efficiency and lifespan of the display panel 300.

[0464] [Second Group of Test Examples]

[0465] The following examples and comparative examples used different materials to prepare display panels 300. The structure of the display panel 300 is shown in Figure 3. The preparation method of the display panel 300 can be referred to the preparation method of the display panel 300 in the first set of experimental examples, and will not be repeated here.

[0466] In Examples 4 to 14 and Comparative Example 7, the materials used for the hole injection layer 2263, the second hole transport layer 2262, the second electron blocking layer 2261, the third light-emitting layer 221C, the second hole blocking layer 2252, the second electron transport layer 2251, the first charge generation layer 2221, the second charge generation layer 2222, the first hole transport layer 2242, the first electron blocking layer 2241, the first light-emitting layer 221A, the second light-emitting layer 221D, the first hole blocking layer 2233, the first electron transport layer 2232, the electron injection layer 2231, the second electrode layer 230G, the microcavity adjustment layer 2121, the first sublayer 211, and the transparent conductive layer 2122 are the same. Furthermore, the materials of the hole injection layer 2263, second hole transport layer 2262, second electron blocking layer 2261, third light-emitting layer 221C, second hole blocking layer 2252, second electron transport layer 2251, first hole transport layer 2242, first electron blocking layer 2241, first light-emitting layer 221A, second light-emitting layer 221D, first hole blocking layer 2233, first electron transport layer 2232, electron injection layer 2231, second electrode layer 230G, microcavity adjustment layer 2121, first sublayer 211, and transparent conductive layer 2122 in Examples 4 to 14 and Comparative Example 7 are the same as those used in the hole injection layer 2263 in the first set of test examples. The materials of the second hole transport layer 2262, the second electron blocking layer 2261, the third light-emitting layer 221C, the second hole blocking layer 2252, the second electron transport layer 2251, the first hole transport layer 2242, the first electron blocking layer 2241, the first light-emitting layer 221A, the second light-emitting layer 221D, the first hole blocking layer 2233, the first electron transport layer 2232, the electron injection layer 2231, the second electrode layer 230G, the microcavity adjustment layer 2121, the first sublayer 211, and the transparent conductive layer 2122 are the same. Therefore, the structure and addition ratio of the above materials can be referred to the materials of the display panel 300 in the first set of test examples, and will not be repeated here.

[0467] The relationship between the film thicknesses in Examples 4 to 14 and Comparative Example 7 is the same. Specifically, in Examples 4 to 14 and Comparative Example 7, the ratio of the first distance L1 to the second distance L2 is 1.23, the ratio of the second distance L2 to the third distance L3 is 1.0, and the ratio of the thickness L8 of the first electron transport functional layer 223 to the sum of the thicknesses L9 of the first hole transport functional layer 224 and the second charge generation layer is 1.28.

[0468] The materials of the first charge generation layer 2222 and the second charge generation layer 2222 in Examples 4 to 14 and Comparative Example 7 are different. The materials of the first charge generation layer 2221 and the second charge generation layer 2222 in Examples 4 to 14 and Comparative Example 7 will be described below.

[0469] In Example 4, the material of the first charge generation layer 2221 includes a host material with the structure shown in (H2-1) above and a fourth dopant material, ytterbium, and the doping ratio of the fourth dopant material is 1%. The material of the second charge generation layer 2222 includes a host material with the structure shown in (PCGL-H) above and a dopant material with the structure shown in (D-PCGL-W) above, and the doping ratio of the dopant material is 5%.

[0470] In Example 5, the material of the first charge generation layer 2221 includes a host material with the structure shown in (H2-14) above and a fourth dopant material, ytterbium, and the doping ratio of the fourth dopant material is 1%. The material of the second charge generation layer 2222 includes a host material with the structure shown in (PCGL-H) above and a dopant material with the structure shown in (D-PCGL-W) above, and the doping ratio of the dopant material is 5%.

[0471] In Example 6, the material of the first charge generation layer 2221 includes a host material with the structure shown above (D-NCGL-H) and a fourth dopant material, ytterbium, and the doping ratio of the fourth dopant material is 1%. The material of the second charge generation layer 2222 includes a host material with the structure shown above (PCGL-H) and a dopant material with the structure shown above (G1-8), and the doping ratio of the dopant material is 5%.

[0472] In Example 7, the material of the first charge generation layer 2221 includes a host material with the structure shown above (D-NCGL-H) and a fourth dopant material, ytterbium, and the doping ratio of the fourth dopant material is 1%. The material of the second charge generation layer 2222 includes a host material with the structure shown above (PCGL-H) and a dopant material with the structure shown above (G1-1'), and the doping ratio of the dopant material is 5%.

[0473] In Example 8, the material of the first charge generation layer 2221 includes a host material with the structure shown above (D-NCGL-H) and a fourth dopant material, ytterbium, and the doping ratio of the fourth dopant material is 1%. The material of the second charge generation layer 2222 includes a host material with the structure shown above (PCGL-H) and a dopant material with the structure shown above (G1-2'), and the doping ratio of the dopant material is 5%.

[0474] In Example 9, the material of the first charge generation layer 2221 includes a host material with the structure shown in (H2-14) above and a fourth dopant material, ytterbium, and the doping ratio of the fourth dopant material is 1%. The material of the second charge generation layer 2222 includes a host material with the structure shown in (PCGL-H) above and a dopant material with the structure shown in (G1-1') above, and the doping ratio of the dopant material is 5%.

[0475] In Example 10, the material of the first charge generation layer 2221 includes a host material with the structure shown in (H2-14) above and a fourth dopant material, ytterbium, and the doping ratio of the fourth dopant material is 1%. The material of the second charge generation layer 2222 includes a host material with the structure shown in (PCGL-H) above and a dopant material with the structure shown in (G1-2') above, and the doping ratio of the dopant material is 5%.

[0476] In Example 11, the material of the first charge generation layer 2221 includes a host material with the structure shown in (H2-1) above and a fourth dopant material, ytterbium, and the doping ratio of the fourth dopant material is 1%. The material of the second charge generation layer 2222 includes a host material with the structure shown in (PCGL-H) above and a dopant material with the structure shown in (G1-1') above, and the doping ratio of the dopant material is 5%.

[0477] In Example 12, the material of the first charge generation layer 2221 includes a host material with the structure shown in (H2-1) above and a fourth dopant material, ytterbium, and the doping ratio of the fourth dopant material is 1%. The material of the second charge generation layer 2222 includes a host material with the structure shown in (PCGL-H) above and a dopant material with the structure shown in (G1-2') above, and the doping ratio of the dopant material is 5%.

[0478] In Example 13, the material of the first charge generation layer 2221 includes a host material with the structure shown in (H2-1) above and a fourth dopant material, ytterbium, and the doping ratio of the fourth dopant material is 1%. The material of the second charge generation layer 2222 includes a host material with the structure shown in (PCGL-H) above and a dopant material with the structure shown in (G1-9) above, and the doping ratio of the dopant material is 5%.

[0479] In Example 14, the material of the first charge generation layer 2221 includes a host material with the structure shown above (H2-14) and a fourth dopant material, ytterbium, and the doping ratio of the fourth dopant material is 1%. The material of the second charge generation layer 2222 includes a host material with the structure shown above (PCGL-H) and a dopant material with the structure shown above (G1-9), and the doping ratio of the dopant material is 5%.

[0480] In Comparative Example 7, the material of the first charge generation layer 2221 includes a host material with the structure shown above (D-NCGL-H) and a fourth dopant material, ytterbium, and the doping ratio of the fourth dopant material is 1%. The material of the second charge generation layer 2222 includes a host material with the structure shown above (PCGL-H) and a dopant material with the structure shown above (D-PCGL-W), and the doping ratio of the dopant material is 5%.

[0481] To more clearly illustrate the differences in materials between the second charge generation layer 2222 and the first charge generation layer 2221 in the embodiments and comparative examples, Table 7 below is used to more clearly show the relationship between the film thicknesses set in the embodiments and comparative examples.

[0482] Table 7

[0483] It should be noted that "Ax" in Table 7 refers to the corresponding structural formula Ax. For example, the subgrid content corresponding to the main material of the first charge generation layer 2221 in Example 4 is "H2-1", which means that the structural formula of the main material in the first charge generation layer 2221 in Example 4 is as shown in (H2-1). Among them, the structural formulas represented by G1-x, G1-x' (x takes a positive integer), H2-x, D-NCGL-H, and D-PCGL-W are as described above and will not be repeated here.

[0484] Based on the above settings, the first light-emitting device 200A, the second light-emitting device 200D, and the third light-emitting device 200C in the display panel 300 of Examples 4 to 14 and Comparative Example 7 are subjected to a current density of 15 mA / cm². 2 Voltage (V), current efficiency (cd / A), and device lifetime were tested under the specified conditions. Device lifetime was characterized by parameter LT95. The test results are shown in Table 8 below. The data for voltage (V), current efficiency (cd / A), and device lifetime are referenced to Comparative Example 7.

[0485] Table 8

[0486] Compared with Comparative Example 7, as shown in Table 8, Examples 4 to 14 exhibit relatively lower voltage, higher current efficiency, and longer lifespan. This is because the material of the second charge generation layer 2222 in Examples 4 to 14 includes a fifth doped material G1 with the structure shown in general formula (I) or general formula (II), and / or the material of the first charge generation layer 2221 includes a fifth host material H2 with the structure shown in general formula (III). The structure shown in general formula (I) or general formula (II) has a strong electron-withdrawing ability, which can enhance the conductivity of the fifth doped material G1 and improve the hole injection performance of the second charge generation layer 2222, thus facilitating the effective generation, injection, and transport of charges and improving the luminous efficiency of the display panel 300. When the first charge generation layer 2221 includes the structure shown in general formula (III), firstly, it can reduce the energy level barrier at the interface (i.e., the first interface) between the second charge generation layer 2222 and the first charge generation layer 2221, thereby reducing the accumulation of charge carriers caused by the energy level barrier at the first interface, preventing material degradation at the first interface, and improving the lifespan of the display panel 300; secondly, it can enable electrons to be quickly transported to the third light-emitting layer 221C to achieve radiative emission, thereby reducing the driving voltage of the display panel 300; thirdly, it can form a complex with the fourth doping material ytterbium, thereby suppressing the crystallization of the fifth host material H2; at the same time, it can increase the electron injection capability of the first charge generation layer 2221, improve the charge flow in the light-emitting device 200, and reduce the driving voltage of the display panel 300.

[0487] As can be seen from the above embodiments and comparative examples, by setting the ratio of the first distance L1 to the second distance L2 to be in the range of 1.0 to 1.5, the first light-emitting layer 221A in the first light-emitting device 200A can be located in the microcavity enhancement region of the first light-emitting device 200A, and the second light-emitting layer 221D in the second light-emitting device 200D can be located in the microcavity enhancement region of the second light-emitting device 200D. This can optimize the spectrum emitted by the display panel 300 and improve the light extraction efficiency of the display panel 300. Furthermore, by setting the ratio of the second distance L2 to the third distance L3 to be in the range of 0.8 to 1.2, the third light-emitting layer 221C in the third light-emitting device 200C can be located in the microcavity enhancement region of the third light-emitting device 200C, thereby improving the luminous efficiency of the display panel 300. By setting the material of the second charge generation layer 2222 to include the fifth doped material with the structure shown in general formula (I) or general formula (II), and / or setting the material of the first charge generation layer 2221 to include the fifth host material with the structure shown in general formula (III), the efficiency and lifespan of the display panel 300 can be improved, and the driving voltage of the display panel 300 can be reduced.

[0488] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A display panel, comprising: Substrate; An isolation structure is disposed on the substrate, defining multiple pixel openings; A light-emitting device, wherein the pixel opening is provided with the light-emitting device, the light-emitting device includes a first electrode, a light-emitting functional layer and a second electrode stacked in a direction away from the substrate, the first electrode includes a first sub-layer and a second sub-layer stacked in a direction away from the substrate, and the light-emitting functional layer includes a first light-emitting layer and a second light-emitting layer stacked in a direction away from the substrate; The light-emitting device includes a first light-emitting device and a second light-emitting device, wherein the second sub-layer in the first light-emitting device and the second sub-layer in the second light-emitting device have different thicknesses; The first light-emitting layer of the first light-emitting device is close to the surface of the substrate, and there is a first distance between it and the surface of the first electrode of the first light-emitting device close to the substrate. The second light-emitting layer of the second light-emitting device is close to the surface of the substrate, and there is a second distance between it and the surface of the first electrode of the second light-emitting device close to the substrate; the ratio of the first distance to the second distance is in the range of 1.0 to 1.

5.

2. The display panel according to claim 1, wherein, The first light-emitting layer emits light of a first color, and the second light-emitting layer emits light of a second color, wherein the wavelength of the light of the first color is greater than the wavelength of the light of the second color; The light-emitting functional layer further includes a third light-emitting layer located on the side of the first light-emitting layer closer to the substrate. The light emitted by the third light-emitting layer is a third color, and the wavelength of the second color light is greater than the wavelength of the third color light. The light-emitting device further includes a third light-emitting device, wherein the thicknesses of the second sub-layer in the first light-emitting device, the second sub-layer in the second light-emitting device, and the second sub-layer in the third light-emitting device are all different; The third light-emitting layer of the third light-emitting device is close to the surface of the substrate, and there is a third distance between it and the surface of the first electrode of the third light-emitting device close to the substrate; the ratio of the second distance to the third distance is in the range of 0.8 to 1.

2.

3. The display panel according to claim 2, wherein, The ratio of the first distance to the third distance is in the range of 1.0 to 1.

5.

4. The display panel according to claim 2 or 3, wherein, The second electrode layer is located near the surface of the substrate, and there is a fourth distance between the second electrode layer and the third light-emitting layer near the surface of the substrate; the second electrode layer is located near the surface of the substrate, and there is a fifth distance between the first light-emitting layer and the first light-emitting layer near the surface of the substrate; the ratio of the fourth distance to the fifth distance is in the range of 1.8 to 2.

2.

5. The display panel according to any one of claims 2 to 4, wherein, The second sub-layer of the first electrode includes a microcavity adjustment layer and a transparent conductive layer. The microcavity adjustment layer is located between the first sub-layer of the first electrode and the transparent conductive layer, and the transparent conductive layer is electrically connected to the first sub-layer. The thicknesses of the microcavity adjustment layer in the first light-emitting device, the microcavity adjustment layer in the second light-emitting device, and the microcavity adjustment layer in the third light-emitting device are all different.

6. The display panel according to claim 5, wherein, The material of the microcavity adjustment layer includes a conductive material.

7. The display panel according to claim 5, wherein, The material of the microcavity adjustment layer includes an insulating material; in the same first electrode, the transparent conductive layer covers the side of the microcavity adjustment layer and is in contact with and electrically connected to the edge of the first sub-layer.

8. The display panel according to any one of claims 5 to 7, wherein, The thickness of the microcavity adjustment layer of the first light-emitting device is greater than the thickness of the microcavity adjustment layer of the second light-emitting device; The thickness of the microcavity adjustment layer of the third light-emitting device is greater than the thickness of the microcavity adjustment layer of the second light-emitting device.

9. The display panel according to any one of claims 5 to 8, wherein, The thickness range of the microcavity adjustment layer of the first light-emitting device is The thickness range of the microcavity adjustment layer of the second light-emitting device is The thickness range of the microcavity adjustment layer of the third light-emitting device is:

10. The display panel according to claim 9, wherein, The thickness range of the light-emitting functional layer is:

11. The display panel according to any one of claims 5 to 10, wherein, The transparent conductive layer has a transmittance of 90% or more for light within a preset wavelength range, which is 440nm to 660nm.

12. The display panel according to claim 11, wherein, The transmittance of the second electrode layer to light within the preset wavelength band is greater than or equal to 40% and less than or equal to 70%. And / or, The reflectivity of the second electrode layer is greater than or equal to 30% and less than or equal to 60%.

13. The display panel according to any one of claims 1 to 12, wherein, The material of the first light-emitting layer includes a first host material; the material of the second light-emitting layer includes a first excimer compound; the first excimer compound includes a second host material and a third host material, wherein the second host material is a hole-type material; Wherein, the absolute value of the difference between the highest occupied molecular orbital energy levels of the first host material and the second host material is less than or equal to 0.3 eV.

14. The display panel according to any one of claims 1 to 13, wherein, The hole mobility of the material in the first light-emitting layer is greater than that of the material in the second light-emitting layer.

15. The display panel according to any one of claims 1 to 14, wherein, The ratio of hole mobility to electron mobility in the material of the second light-emitting layer ranges from 0.01 to 100.

16. The display panel according to any one of claims 2 to 15, wherein, The material of the first light-emitting layer includes a first doped material; the material of the second light-emitting layer includes a second doped material; and the material of the third light-emitting layer includes a third doped material. The peak wavelength range of the photoluminescence spectrum of the first doped material is 600 nm to 650 nm; and / or, The peak wavelength range of the photoluminescence spectrum of the second doped material is 500 nm to 540 nm; and / or, The peak wavelength range of the photoluminescence spectrum of the third doped material is 440 nm to 490 nm.

17. The display panel according to any one of claims 2 to 16, wherein, The material of the first light-emitting layer includes a first doped material; the material of the second light-emitting layer includes a second doped material; and the material of the third light-emitting layer includes a third doped material. The peak wavelength range of the electroluminescence spectrum of the first light-emitting device is 600 nm to 650 nm; and / or, The peak wavelength range of the electroluminescence spectrum of the second light-emitting device is 500 nm to 540 nm; and / or, The peak wavelength range of the electroluminescence spectrum of the third light-emitting device is 440 nm to 490 nm.

18. The display panel according to any one of claims 1 to 17, wherein, The isolation structure includes: A pixel-defining layer defines multiple first sub-openings; A partition layer is stacked on top of the pixel defining layer and defines a plurality of second sub-openings; each second sub-opening and a first sub-opening are connected to form a pixel opening; The partition layer includes a first sub-partition layer and a second sub-partition layer stacked in a direction away from the substrate. The second sub-partition layer includes an edge portion that extends towards the center line of the adjacent pixel opening relative to the first sub-partition layer.

19. The display panel according to claim 18, wherein, The partition layer is located between the pixel defining layer and the first electrode layer; The edge portion has a size range of 0.4μm to 1μm along the second direction, which is parallel to the substrate and extends from any point on the edge portion to the center line of the adjacent pixel opening.

20. The display panel according to claim 18 or 19, wherein, The thickness of the first sub-partition layer ranges from 1 μm to 4 μm.

21. The display panel according to any one of claims 1 to 17, wherein, The isolation structure includes: A pixel-defining layer defines multiple first sub-openings; A partition layer is stacked on the side of the pixel defining layer away from the substrate and defines a plurality of second sub-openings; each second sub-opening and a first sub-opening communicate with each other to form a pixel opening; The first cross-section of the partition layer is trapezoidal, and the dimension of the side of the trapezoid that is relatively far away from the substrate is greater than the dimension of the side that is relatively close to the substrate; the first cross-section is perpendicular to the substrate and runs along the line connecting the centers of two adjacent pixel openings.

22. The display panel according to claim 21, wherein, In the first cross section, the angle between the side of the partition layer and the surface of the pixel defining layer near the partition layer ranges from 30° to 80°.

23. The display panel according to claim 21 or 22, wherein, The thickness of the partition layer ranges from 1 μm to 2 μm.

24. The display panel according to any one of claims 1 to 17, further comprising: A first insulating layer and a second insulating layer are disposed between the first electrode layer and the substrate, wherein the first insulating layer Compared to the second insulating layer, it is closer to the substrate; The isolation structure includes: A pixel defining layer defines the plurality of pixel openings; Multiple isolation trenches penetrate the pixel defining layer and the second insulating layer, and extend through the first insulating layer; the isolation trenches are located between any two adjacent pixels among the multiple pixel openings; In the isolation trench, the second insulating layer includes an edge portion that extends away from the adjacent pixel opening compared to the first insulating layer.

25. The display panel according to claim 24, wherein, Along the first direction, the distance between the surface of the edge portion close to the bottom surface of the isolation trench and the bottom surface of the isolation trench ranges from 0.2 μm to 1 μm.

26. The display panel according to claim 24 or 25, wherein, The edge portion has a size ranging from 0.3 μm to 0.8 μm along a third direction, which is parallel to the substrate and perpendicular to the extension direction of the edge portion.

27. The display panel according to any one of claims 2 to 26, wherein, The light-emitting device further includes a first charge-generating layer and a second charge-generating layer in contact with each other, wherein the first charge-generating layer is closer to the substrate than the second charge-generating layer. The third light-emitting layer is located between the first charge-generating layer and the substrate, and the first light-emitting layer and the second light-emitting layer are located between the second charge-generating layer and the second electrode layer; The second charge-generating layer is located near the surface of the substrate, and there is a sixth distance between it and the third light-emitting layer located near the surface of the substrate; the second charge-generating layer is located near the surface of the substrate, and there is a seventh distance between it and the second light-emitting layer located away from the substrate; the ratio of the sixth distance to the seventh distance is in the range of 0.5 to 0.

8.

28. The display panel according to claim 27, wherein, The material of the first charge generation layer includes a fifth host material and a fourth doped material; in the first charge generation layer, the mass percentage of the fourth doped material is less than the mass percentage of the fifth host material. The fifth main material is selected from any one of the structures shown in the following general formula (III); Among them, X3, X4, X5, and X6 may be the same or different, and are independently selected from C(R). d Any one of X3, X4, X5, and X6; and at least two of them are N; Ar5, Ar6, Ar7, and Ar8 may be the same or different, and are independently selected from hydrogen, deuterium, tritium, halogen, cyano, nitro, etc. The substituted or unsubstituted C6-C60 aryl group, the substituted or unsubstituted C3-C60 alicyclic group, the substituted or unsubstituted C6-C60 aromatic fused-ring group, the substituted or unsubstituted C1-C50 alkyl group, the substituted or unsubstituted C2-C20 alkenyl group, the substituted or unsubstituted C2-C20 alkynyl group, the substituted or unsubstituted C1-C30 alkoxy group, the substituted or unsubstituted C6-C30 aryloxy group, the substituted or unsubstituted C3-C60 alkylsilyl group, the substituted or unsubstituted C18-C60 arylsilyl group, the substituted or unsubstituted C8-C60 alkylarylsilyl group, and the substituted or unsubstituted C2-C60 heterocyclic group; and the heterocyclic group comprises at least one of O, N, S, Si, and P; R d It is selected from hydrogen, deuterium, substituted or unsubstituted C1-C60 alkyl, substituted or unsubstituted C2-C60 alkenyl, substituted or unsubstituted C2-C60 alkynyl, substituted or unsubstituted C1-C60 alkoxy, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C1-C10 heterocyclic alkyl, substituted or unsubstituted C3-C10 cycloalkenyl, substituted or unsubstituted C1-C10 heterocyclic alkenyl, substituted or unsubstituted C6-C60 aryl, substituted or unsubstituted C6-C60 aryloxy, substituted or unsubstituted C6-C60 arylthio, substituted or unsubstituted C1-C60 heteroaryl, substituted or unsubstituted monovalent nonaromatic condensed polycyclic and substituted or unsubstituted monovalent nonaromatic condensed heterocyclic.

29. The display panel according to claim 28, wherein, The fourth doping material includes one or any combination of alkali metals, alkaline earth metals, transition metals, alkali metal compounds, alkaline earth metal compounds, and transition metal compounds.

30. The display panel according to claim 28 or 29, wherein, The mass percentage of the fourth doped material in the material of the first charge generation layer is greater than or equal to 0.5% and less than or equal to 3%.

31. The display panel according to any one of claims 27 to 30, wherein, The second electrode layer is a cathode layer, and the first electrode layer is an anode layer; The light-emitting device further includes: A first electron transport functional layer is located between the second light-emitting layer and the second electrode layer; and, The first hole transport functional layer is located between the first light-emitting layer and the second charge generation layer; The ratio of the thickness of the first electron transport functional layer to the sum of the thicknesses of the first hole transport functional layer and the second charge generation layer ranges from 1.1 to 1.

5.

32. The display panel according to claim 31, wherein, The light-emitting device further includes: The second electron transport functional layer is located between the first charge generation layer and the third light-emitting layer; The second hole transport functional layer is located on the side of the third light-emitting layer away from the second electron transport functional layer; The first electron transport functional layer includes an electron injection layer, a first electron transport layer, and a first hole blocking layer stacked along a direction away from the second electrode layer; The first hole transport functional layer includes a first electron blocking layer and a first hole transport layer stacked in a direction away from the first light-emitting layer; The second electron transport functional layer includes a second electron transport layer stacked along a direction away from the first charge generation layer. Sub-transport layer and second hole blocking layer; The second hole transport functional layer includes a second electron blocking layer, a second hole transport layer, and a hole injection layer stacked in a direction away from the third light-emitting layer; The material of the third light-emitting layer includes a fourth host material and a third doped material, wherein the third doped material is a fluorescent material; The triplet energy level of the material in the second hole-blocking layer is greater than the triplet energy level of the fourth host material; and / or, The triplet energy level of the material in the second electron blocking layer is greater than the triplet energy level of the fourth host material.

33. The display panel according to claim 32, wherein, The absolute value of the difference between the lowest unoccupied molecular orbital energy level of the material of the second hole-blocking layer and the fourth host material is less than or equal to 0.3 eV; and / or, The absolute value of the difference between the highest occupied molecular orbital energy level of the material of the second electron blocking layer and the fourth host material is less than or equal to 0.3 eV.

34. The display panel according to claim 32 or 33, wherein, The absolute value of the difference between the highest occupied molecular orbital energy level of the material of the second charge generation layer and the material of the first hole transport layer is less than or equal to 0.3 eV.

35. The display panel according to any one of claims 32 to 34, wherein, The absolute value of the difference between the lowest unoccupied molecular orbital energy levels of the materials of the first charge-generating layer and the first hole-blocking layer is less than or equal to 0.5 eV; and / or, The absolute value of the difference between the lowest unoccupied molecular orbital energy level of the material of the first charge-generating layer and the material of the second hole-blocking layer is less than or equal to 0.5 eV.

36. The display panel according to any one of claims 32 to 35, wherein, The absolute value of the difference between the highest occupied molecular orbital energy levels of the material of the first hole transport layer and the material of the first electron blocking layer is greater than or equal to 0.1 eV and less than or equal to 0.4 eV. And / or, The absolute value of the difference between the highest occupied molecular orbital energy levels of the material of the second hole transport layer and the material of the second electron blocking layer is greater than or equal to 0.1 eV and less than or equal to 0.4 eV.

37. The display panel according to any one of claims 32 to 36, wherein, The thickness of the second hole transport layer is less than the thickness of the first hole transport layer.

38. The display panel according to any one of claims 32 to 37, wherein, The hole mobility of the material in the first hole transport layer is greater than that of the material in the second hole transport layer.

39. The display panel according to any one of claims 32 to 38, wherein, The hole mobility of the material of the second electron blocking layer is greater than or equal to the hole mobility of the material of the first electron blocking layer.

40. The display panel according to any one of claims 32 to 39, wherein, The material of the second charge generation layer includes a sixth host material and a fifth doped material; the mass percentage of the fifth doped material in the material of the second charge generation layer is less than the mass percentage of the sixth host material in the second charge generation layer. The mass percentage of the material; And / or, The material of the hole injection layer includes the sixth host material and the fifth doped material; the mass percentage of the fifth doped material in the material of the hole injection layer is less than the mass percentage of the sixth host material in the material of the hole injection layer. The sixth host material is a hole-type material; the fifth doping material is configured to p-type dope the sixth host material.

41. The display panel according to claim 40, wherein, The fifth doped material is selected from any one of the structures shown in the following general formula (I); Where A is any one of the three-membered ring, four-membered ring, five-membered ring and six-membered ring; R1, R2, R3, R4, R5, and R6 may be the same or different, and are independently selected from any one of halogen, cyano, substituted aryl, and substituted or unsubstituted heteroaryl; and, in the case where R1, R2, R3, R4, R5, or R6 is a substituted aryl, the substituent of the aryl includes at least one electron-withdrawing group.

42. The display panel according to claim 41, wherein, Of R1, R2, R3, R4, R5, and R6, at least one is a cyano group.

43. The display panel according to claim 40, wherein, The fifth doped material is selected from any one of the structures shown in general formula (II); Where X1 and X2 are the same or different, and are independently selected from C(R) a ), N and Si(R) b Any one of the following; Y1 and Y2 may be the same or different, and are independently selected from N(R). c Any one of O and S; Ar1, Ar2, Ar3, and Ar4 may be the same or different, and are independently selected from any one of halogen, cyano, substituted or unsubstituted phenyl, substituted or unsubstituted biphenyl, substituted or unsubstituted terphenyl, substituted or unsubstituted fluorenyl, substituted or unsubstituted adamantyl, and substituted or unsubstituted heteroaryl; or may be connected to adjacent groups to form substituted or unsubstituted rings. R7, R8, R a R b and R c Whether the groups are the same or different, they are independently selected from hydrogen, deuterium, halogen, cyano, substituted or unsubstituted C3-C20 heteroaryl, substituted or unsubstituted C6-C20 aryl, substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C10 haloalkyl, substituted or unsubstituted C3-C10 cycloalkyl, substituted or unsubstituted C2-C10 heterocycloalkyl, substituted or unsubstituted C1-C10 alkoxy, substituted or unsubstituted C1-C10 alkathio, substituted or unsubstituted C6-C18 aryloxy, substituted or unsubstituted C6-C18 arylthio, substituted or unsubstituted C6-C24 phosphoroxy, and substituted or unsubstituted C6-C18 alkylsulfonyl. m and n may be the same or different, and are independently selected from 1, 2, 3, 4 and 5 respectively.

44. The display panel according to any one of claims 40 to 43, wherein, The mass percentage of the fifth doped material in the material of the second charge generation layer is greater than or equal to 0.5% and less than or equal to 10%. And / or, The mass percentage of the fifth dopant material in the hole injection layer is greater than or equal to 0.5% and less than or equal to 10%.

45. A light-emitting device, comprising: First light-emitting device and second light-emitting device; Each of the first light-emitting device and the second light-emitting device includes a first electrode, a light-emitting functional layer, and a second electrode stacked sequentially. The first electrode includes a first sub-layer and a second sub-layer stacked along a direction close to the light-emitting functional layer. The second sub-layer and the second light-emitting device in the first light-emitting device... The thickness of the second sub-layer in the component is different, and the light-emitting functional layer includes a first light-emitting layer and a second light-emitting layer stacked in a direction away from the first electrode; The first light-emitting layer emits light of a first color, and the second light-emitting layer emits light of a second color; the wavelength of the light of the first color is greater than the wavelength of the light of the second color. Wherein, the surface of the first light-emitting layer of the first light-emitting device close to the surface of the first electrode is at a first distance from the surface of the first electrode of the first light-emitting device away from the light-emitting functional layer; the surface of the second light-emitting layer of the second light-emitting device close to the surface of the first electrode of the second light-emitting device is at a second distance from the surface of the first electrode of the second light-emitting device away from the light-emitting functional layer; the ratio of the first distance to the second distance is in the range of 1.0 to 1.

5.

46. ​​A display device, comprising: The display panel as described in any one of claims 1 to 44; The circuit board is electrically connected to the display panel.

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