Substrate processing device

Abstract

Disclosed in the present application is a substrate processing device, which comprises a chamber, a fluid supply unit, a fluid supply line, a plurality of hardware terminals, a fluid discharge line, a measurement system and a first sampling line, wherein the chamber is configured to process substrates; the fluid supply unit is configured to supply fluid to the chamber; the fluid supply line connects the fluid supply unit and the chamber and delivers the fluid to the chamber; the plurality of hardware terminals are arranged on the fluid supply line; the fluid discharge line is configured to discharge processed fluid in the chamber; the first sampling line is connected to the fluid discharge line and outlets of the plurality of hardware terminals in an on-off manner, respectively; and the measurement system is configured to measure particle parameters of the fluid in the first sampling line. When the measurement system first measures, via the first sampling line, that the particle parameters of the fluid in the fluid discharge line fail to meet the specifications, the measurement system then measures, via the first sampling line, whether the particle parameters of fluid from the outlets of the corresponding hardware terminals meet the specifications. The present application can measure particle parameters and check particle sources.

Description

Substrate processing device Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and more particularly to a substrate processing apparatus. Background Technology

[0002] With the rapid development of advanced technologies such as mobile phones, 5G communications, the Internet of Things, artificial intelligence, and edge computing, higher demands are being placed on the operating speed and performance of integrated circuits. Currently, the feature size of integrated circuit chips is becoming increasingly smaller, and the aspect ratio is becoming increasingly higher, making many processes increasingly challenging. To address this challenge, supercritical carbon dioxide (SCCO2) drying technology has emerged in the substrate drying process.

[0003] Supercritical carbon dioxide, as a fourth special state distinct from solids, liquids, and gases, possesses characteristics such as high density, easy diffusion, and zero surface tension, making it less likely to cause deformation or collapse of the substrate's patterned structure. Therefore, it is particularly suitable for cleaning and drying high aspect ratio structures, especially at the 17nm / 19nm node, where supercritical carbon dioxide drying technology becomes especially important.

[0004] Currently, supercritical carbon dioxide drying technology involves high temperature and high pressure, which not only places high demands on the hardware of the substrate processing device, but also makes it sensitive to process conditions such as temperature and pressure, and requires good control of particles.

[0005] Therefore, it is necessary to provide a substrate processing apparatus that can effectively detect particle parameters and identify particle sources. Summary of the Invention

[0006] The purpose of this application is to solve the problem of how to detect particle parameters and identify particle sources in the prior art.

[0007] To address the aforementioned problems, one embodiment of this application provides a substrate processing apparatus, comprising:

[0008] The chamber is used to process the substrate;

[0009] The fluid supply unit is used to supply fluid to the chamber;

[0010] Fluid supply lines are used to connect the fluid supply unit to the chamber and to deliver fluid to the chamber.

[0011] Multiple hardware terminals are installed in the fluid supply pipeline;

[0012] Fluid discharge line, used to discharge treated fluid from the chamber;

[0013] The detection system and the first sampling pipeline are connected to the fluid discharge pipeline and the outlets of multiple hardware terminals respectively. The detection system is used to detect the particle parameters of the fluid in the first sampling pipeline.

[0014] The substrate processing apparatus is configured as follows:

[0015] After the detection system first detects that the particle parameters of the fluid in the fluid discharge pipeline do not meet the requirements through the first sampling pipeline, the detection system then detects whether the particle parameters of the fluid at the outlet of the corresponding hardware terminal meet the requirements through the first sampling pipeline.

[0016] In the substrate processing apparatus proposed in this application, the first sampling pipeline is connected to the fluid discharge pipeline and the outlets of multiple hardware terminals in a switchable manner. The detection system can first detect whether the particle parameters of the fluid in the fluid discharge pipeline meet the requirements through the first sampling pipeline. If they do not meet the requirements, the first sampling pipeline can be used to detect whether the particle parameters of the outlet fluid from the corresponding hardware terminal meet the requirements, thereby identifying the particle source.

[0017] Other features and corresponding beneficial effects of this application will be described in the latter part of the specification, and it should be understood that at least some of the beneficial effects will become obvious from the description in this application.

[0018] Overview of the attached figures

[0019] Figure 1 is a schematic diagram of the substrate processing apparatus according to an embodiment of this application;

[0020] Figure 2 is a schematic diagram of the structure of the online detection system according to an embodiment of this application; and

[0021] Figure 3 is a schematic diagram of the sampling system of the offline detection system according to an embodiment of this application.

[0022] Preferred embodiments of this application

[0023] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. Although the description of this application is presented in conjunction with preferred embodiments, this does not mean that the features of this application are limited to this embodiment. On the contrary, the purpose of describing the application in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of this application. To provide a thorough understanding of this application, many specific details will be included in the following description. This application may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of this application, some specific details will be omitted in the description. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.

[0024] It should be noted that in this specification, similar reference numerals and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0025] The technical solutions of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0026] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0027] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0028] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings. Example:

[0029] Figure 1 is a schematic diagram of the substrate processing apparatus according to an embodiment of this application.

[0030] Referring to Figure 1, the substrate processing apparatus proposed in this application includes a chamber 100, a fluid supply unit 200, a fluid supply line 310, a fluid discharge line 320, a detection system 40, a first sampling line 401, and multiple hardware terminals 500. The chamber 100 is used to process the substrate. The fluid supply unit 200 supplies fluid to the chamber 100. The fluid supply line 310 connects the fluid supply unit 200 and the chamber 100, and transports fluid from the fluid supply unit 200 to the chamber 100. The fluid discharge line 320 discharges the processed fluid from the chamber 100. A valve 110 is provided on the fluid discharge line 320 to control the opening and closing of the fluid discharge line 320. Multiple hardware terminals 500 are provided on the fluid supply line 310 for processing the fluid into a supercritical state. The first sampling line 401 is connected to the fluid discharge line 320 and the outlets of multiple hardware terminals 500, respectively, and is connected to the detection system 40, which is used to detect the particle parameters of the fluid in the first sampling line 401. In this example, multiple second sampling lines 402 are respectively disposed at the outlets of multiple hardware terminals 500 and connected to the fluid supply line 310 and the first sampling line 401. Multiple switching elements 600 are respectively disposed at the multiple second sampling lines 402 and are used to control the on / off state of the multiple second sampling lines 402. When all multiple switching elements 600 are closed, the fluid in the fluid supply section 200 flows sequentially through the multiple hardware terminals 500 and the chamber 100 into the detection system 40, where the detection system 40 detects the particle parameters of the fluid. When one of the multiple switching elements 600 is turned on, the fluid at the outlet of the corresponding hardware terminal 500 flows to the detection system 40 through the corresponding second sampling pipeline 402 for detection. This detects whether the particle parameters at the outlet of the hardware terminal 500 meet the requirements, thereby identifying the particle source. In this embodiment, the fluid supply pipeline 310 refers to the pipeline between the fluid supply section 200 and the chamber 100, as shown by the thick line in Figure 1.

[0031] Referring to Figure 1, the substrate processing apparatus is configured such that, after the detection system 40 detects that the particle parameters of the fluid in the fluid discharge pipeline 320 do not meet the requirements through the first sampling pipeline 401, the detection system 40 further detects whether the particle parameters of the fluid from the outlet of the corresponding hardware terminal 500 meet the requirements through the first sampling pipeline 401. Specifically, multiple switching elements 600 are activated, so that the corresponding hardware terminal 500 is connected to the first sampling pipeline 401 through the corresponding second sampling pipeline 402, so that the detection system 40 can detect whether the particle parameters of the fluid from the outlet of the corresponding hardware terminal 500 meet the requirements, thereby identifying the source of the particles and facilitating maintenance. In the process of activating multiple switching elements 600, the switching elements 600 corresponding to the outlets of each hardware terminal 500 can be activated sequentially along the flow direction of the fluid in the fluid supply pipeline 310, while the remaining switching elements 600 are deactivated, thereby systematically checking each hardware terminal 500 one by one; or the hardware terminal 500 can be checked without order; or the switching elements 600 corresponding to the outlets of each hardware terminal 500 can be activated sequentially along the direction opposite to the flow direction, while the remaining switching elements 600 are deactivated, thereby systematically checking at least one hardware terminal 500 to identify the particle source.

[0032] For example, the fluid supplied by the fluid supply unit 200 is, for example, carbon dioxide (CO2). Multiple hardware terminals 500 process the carbon dioxide to generate supercritical carbon dioxide, which is then supplied to the chamber 100. The supercritical carbon dioxide in the chamber 100 contacts isopropanol (IPA) on the substrate surface. The IPA dissolves in the supercritical carbon dioxide and is gradually replaced by supercritical carbon dioxide, thereby removing the isopropanol. Afterwards, the patterned structures on the substrate surface are filled only with supercritical carbon dioxide. Finally, the supercritical pressure in the chamber 100 drops to atmospheric pressure, and the supercritical carbon dioxide changes to a gaseous state and is discharged from the fluid discharge line 320. The fluid in the fluid discharge line 320 may contain supercritical carbon dioxide or carbon dioxide in a gaseous state. Particle parameters include, for example, the number of particles and particle composition. When the particle parameters exceed predetermined values, it is considered non-compliant. Particles may be, for example, particles generated by friction from various components.

[0033] In some embodiments, the detection system 40 includes an online detection system 400 and / or an offline detection system. Exemplarily, after the substrate drying process is completed, a depressurization step is performed on the chamber 100, causing the supercritical fluid in the chamber 100 to become gas and be discharged through a fluid discharge line 320. A first sampling line 401 samples the gas in the fluid discharge line 320, allowing the detection system 40 to detect the particle parameters of the gas in the fluid discharge line 320. Alternatively, depending on actual process requirements, the particle parameters of the gas in the fluid discharge line 320 can be detected by the detection system 40 after a predetermined number of substrate drying processes.

[0034] In this embodiment, as shown in Figure 1, the detection system 40 includes an online detection system 400 and an offline detection system. A first sampling line 401 is connected to the online detection system 400 and the offline detection system via an online detection line 4012 and an offline detection line 4013, respectively. The online detection system 400 is used to detect the particle parameters of the fluid in the online detection line 4012, and the offline detection system is used to detect the particle parameters of the fluid in the offline detection line 4013.

[0035] The online detection system 400 and the offline detection system are described below:

[0036] Figure 2 is a schematic diagram of the structure of the online detection system according to an embodiment of this application.

[0037] Referring to Figure 2, in some embodiments, the online detection system 400 includes a first buffer chamber 410 and a detector 420. The first buffer chamber 410 is used to receive the fluid discharged from the online detection pipeline 4012, serving as a sampling fluid. The detector 420 is used to detect the particle parameters of the fluid discharged from the first buffer chamber 410. The detector 420 can be a laser particle detector, capable of online detection of large particles larger than 100 nm. In other embodiments, a suitable detector 420 can also be used to perform online detection of particles smaller than 100 nm, depending on actual needs.

[0038] Specifically, as shown in Figure 2, the first buffer chamber 410 includes a first heater 411, a first pressure sensor 412, and a first temperature sensor 413. The first heater 411 is used to heat the fluid in the first buffer chamber 410, so that the fluid remains in a gaseous state and is maintained at a set temperature. The first temperature sensor 413 is used to detect the temperature inside the first buffer chamber 410, and the first pressure sensor 412 is used to detect the pressure inside the first buffer chamber 410.

[0039] Referring to Figure 2, in some embodiments, a first flow meter 414 is provided at the inlet of the first buffer chamber 410 to detect the flow rate of the fluid entering the first buffer chamber 410. A first back pressure valve 415, a second flow meter 416, and a second temperature sensor 417 are sequentially provided at the outlet of the first buffer chamber 410. The first back pressure valve 415 is used to control the pressure in the first buffer chamber 410, the second flow meter 416 is used to detect the flow rate of the fluid discharged from the first buffer chamber 410, and the second temperature sensor 417 is used to detect the temperature of the fluid discharged from the first buffer chamber 410.

[0040] Figure 3 is a schematic diagram of the sampling system of the offline detection system according to an embodiment of this application.

[0041] Referring to Figures 1 and 3, in some embodiments, the offline testing system includes a sampling system 700 and an offline detector (not shown). Specifically, the sampling system 700 includes a second buffer chamber 710, which includes an inlet, an outlet, a substrate support device 711, and a pick-and-place port 712. The substrate support device 711 is used to place the substrate to be tested, and the pick-and-place port 712 is used for the substrate to be tested to enter and exit the second buffer chamber 710. The offline testing pipeline 4013 supplies fluid to the second buffer chamber 710 through the inlet to purge the substrate to be tested, and the outlet is used to discharge the fluid in the second buffer chamber 710. When performing offline testing, the fluid in the fluid supply pipeline 310 sequentially passes through multiple hardware terminals 500 and chamber 100 into the second buffer chamber 710 to purge the substrate to be tested. After a predetermined purging time, the substrate to be tested is removed from the second buffer chamber 710, and the particle parameters on the substrate to be tested are detected by the offline detector. The particle parameters are, for example, the number of particles and the particle composition. The offline detector is, for example, a wafer particle inspection device that can detect particles smaller than 100 nm. In other embodiments, the offline detector can also perform online detection of particles larger than 100 nm, depending on actual needs.

[0042] Referring to Figure 3, in some embodiments, the second buffer chamber 710 further includes a flow buffer plate 713 disposed below the inlet, so that the fluid entering from the offline detection pipeline 4013 bypasses the flow buffer plate 713 and reaches the upper surface of the substrate, effectively buffering the force of the fluid and preventing the fluid force from causing substrate fragments, thereby affecting the detection of particle parameters on the substrate by the wafer particle inspection equipment.

[0043] In some embodiments, as shown in FIG3, the second buffer chamber 710 includes a second heater 714, a third temperature sensor 715, and a second pressure sensor 716. The second heater 714 is used to heat the fluid in the second buffer chamber 710 to keep the fluid in a gaseous state and maintain it at a set temperature. The third temperature sensor 715 is used to detect the temperature inside the second buffer chamber 710, and the second pressure sensor 716 is used to detect the pressure inside the second buffer chamber 710.

[0044] In some embodiments, as shown in FIG3, a third flow meter 717 is provided at the inlet of the second buffer chamber 710 for detecting the flow rate of the fluid entering the second buffer chamber 710. A second back pressure valve 718 and a fourth flow meter 719 are sequentially provided at the outlet of the second buffer chamber 710. The second back pressure valve 718 is used to control the pressure in the second buffer chamber 710, and the fourth flow meter 719 is used to detect the flow rate of the fluid discharged from the second buffer chamber 710.

[0045] In some embodiments, the substrate processing apparatus may be configured with only the online inspection system 400, without the offline inspection system. In other embodiments, the substrate processing apparatus may be configured with only the offline inspection system, without the online inspection system 400.

[0046] In some embodiments, as shown in FIG1, the substrate processing apparatus further includes a first control valve 810 and a second control valve 820. The first control valve 810 is disposed at the inlet of the online inspection system 400, and the second control valve 820 is disposed at the inlet of the offline inspection system. This application allows selection of online or offline inspection by opening or closing the first control valve 810 and the second control valve 820 according to actual process requirements.

[0047] In some embodiments, as shown in FIG1, along the flow direction of the fluid in the fluid supply line 310, a plurality of hardware terminals 500 sequentially include a filter 510, a cooling section 520, a buffer tank 530, and a high-pressure pump 540. A first heating device 550 is also provided on the fluid supply line 310. The filter 510 is used to filter the fluid discharged from the fluid supply section 200, the cooling section 520 is used to cool the fluid, the buffer tank 530 is used to store the cooled fluid, and the high-pressure pump 540 is used to pressurize the cooled fluid and deliver it to the first heating device 550. The first heating device 550 is used to heat the fluid so that the fluid reaches a supercritical temperature and is supplied to the chamber 100. For example, the fluid supplied by the fluid supply unit 200 is, for example, carbon dioxide (CO2). The filter 510 filters the carbon dioxide, the cooling unit 520 cools the carbon dioxide and changes it into a liquid state, and the high-pressure pump 540 pressurizes the liquid carbon dioxide in the buffer tank 530 and delivers it to the first heating device 550 for heating, so that the liquid carbon dioxide changes into supercritical carbon dioxide, and then supplies it to the chamber 100 to dry the substrate.

[0048] In some embodiments, as shown in FIG1, a fourth temperature sensor 590, a third pressure sensor 580, a second heating device 570, and a third back pressure valve 560 are also provided on the fluid supply line 310. The fourth temperature sensor 590 and the third pressure sensor 580 are located between the high-pressure pump 540 and the first heating device 550. The second heating device 570 and the third back pressure valve 560, together with the cooling section 520, the buffer tank 530, the high-pressure pump 540, the fourth temperature sensor 590, and the third pressure sensor 580, form a circulation loop 312, wherein the second heating device 570 is used to heat the fluid in the circulation loop 312, and the third back pressure valve 560 is used to control the pressure of the circulation loop 312.

[0049] In some embodiments, as shown in FIG1, the substrate processing apparatus further includes a third sampling line 403, a third control valve 315, and a fourth control valve 316. The third sampling line 403 connects the circulation loop 312 and the first sampling line 401. The third control valve 315 is disposed on the third sampling line 403. The connection point between the third sampling line 403 and the circulation loop 312 is located between the second heating device 570 and the third pressure sensor 580. The fourth control valve 316 is disposed on the fluid supply line 310 and is located at the inlet of the first heating device 550. When the third control valve 315 is opened and the fourth control valve 316 is closed for troubleshooting, the detection system 40 can detect particle parameters in the entire fluid supply line component (e.g., multiple hardware terminals 500) located before the connection point. If the particle parameter is detected to be abnormal, it indicates that the particle source is from the hardware terminal 500, and each hardware terminal 500 is then checked one by one. If the particle parameter is detected to be normal, it indicates that the particle source is from the chamber 100. The fourth control valve 316 is located at the inlet of the first heating device 550 and is used to determine whether to allow fluid to flow into the chamber 100. When the fourth control valve 316 is opened, allowing a certain flow rate of fluid to flow into the chamber 100, a portion of the fluid will enter the circulation loop 312 for self-circulation, so as to stabilize the fluid pressure near the inlet of the chamber 100.

[0050] In some embodiments, as shown in FIG1, the substrate processing apparatus further includes a fourth sampling line 404 and a fifth control valve 210. The fourth sampling line 404 is disposed at the outlet of the fluid supply unit 200 and connects the fluid supply line 310 and the first sampling line 401. The fifth control valve 210 is disposed on the fourth sampling line 404. When the fifth control valve 210 is opened, and the first control valve 810 or the second control valve 820 is opened, the fluid supplied by the fluid supply unit 200 can enter the detection system 40 through the fourth sampling line 404, thereby obtaining the fluid particle parameters before processing.

[0051] Because the outlet of the fluid supply unit 200 in this application is connected to the first sampling line 401 through the fourth sampling line 404, the detection system 40 can detect the particle parameters of the fluid in the first sampling line 401, and thus detect the fluid particle parameters before processing. Since the first sampling line 401 is also connected to the fluid discharge line 320, the detection system 40 can detect the fluid particle parameters after processing discharged from the chamber 100. Therefore, by comparison, the difference between the fluid particle parameters before processing and the fluid particle parameters after processing can be known, which is beneficial for the calibration of particle detection results.

[0052] It should be noted that all pipelines in this application, such as fluid supply pipeline 310 and fluid discharge pipeline 320, as well as the first heating device 550 and the second heating device 570, are made of materials that are not easily contaminated by particles and do not easily generate particles. They can be made of stainless steel that has been treated with EP (Electro Polishing). In this way, the first heating device 550 and the second heating device 570 do not need to detect particle parameters.

[0053] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A substrate processing apparatus, characterized in that, include: The chamber is used to process the substrate; A fluid supply unit is used to supply fluid to the chamber; A fluid supply line for connecting the fluid supply unit and the chamber and delivering the fluid to the chamber; Multiple hardware terminals are installed in the fluid supply pipeline; A fluid discharge line is provided for discharging the treated fluid from the chamber. The system includes a detection system and a first sampling pipeline, wherein the first sampling pipeline is connected to the fluid discharge pipeline and the outlets of the plurality of hardware terminals respectively in a switchable manner, and the detection system is used to detect the particle parameters of the fluid in the first sampling pipeline. The substrate processing apparatus is configured as follows: When the detection system first detects that the particle parameters of the fluid in the fluid discharge pipeline do not meet the requirements through the first sampling pipeline, the detection system then detects whether the particle parameters of the fluid at the outlet of the corresponding hardware terminal meet the requirements through the first sampling pipeline.

2. The substrate processing apparatus according to claim 1, characterized in that, The detection system includes an online detection system and / or an offline detection system, wherein the online detection system and the offline detection system are respectively connected to the first sampling pipeline in a switchable manner.

3. The substrate processing apparatus according to claim 2, characterized in that, The online detection system includes: A first buffer chamber is used to receive the fluid in the first sampling pipeline; A detector is used to detect the particle parameters of the fluid discharged from the first buffer chamber.

4. The substrate processing apparatus according to claim 3, characterized in that, The first buffer cavity includes: A first heater is used to heat the fluid in the first buffer chamber so that the fluid remains in a gaseous state and is maintained at a set temperature.

5. The substrate processing apparatus according to claim 3, characterized in that, The first buffer cavity further includes: A first temperature sensor is used to detect the temperature inside the first buffer chamber; The first pressure sensor is used to detect the pressure inside the first buffer chamber.

6. The substrate processing apparatus according to claim 3, characterized in that, The inlet of the first buffer chamber is provided with: A first flow meter is used to detect the flow rate of the fluid entering the first buffer chamber.

7. The substrate processing apparatus according to claim 3, characterized in that, The outlet of the first buffer chamber is provided with the following in sequence: The first back pressure valve is used to control the pressure in the first buffer chamber; A second flow meter is used to detect the flow rate of the fluid discharged from the first buffer chamber.

8. The substrate processing apparatus according to claim 3, characterized in that, The outlet of the first buffer chamber is provided with: A second temperature sensor is used to detect the temperature of the fluid discharged from the first buffer chamber.

9. The substrate processing apparatus according to claim 2, characterized in that, The offline detection system includes: The sampling system includes a second buffer chamber, which includes an inlet, an outlet, a substrate support device, and a pick-and-place port. The substrate support device is used to place the substrate to be tested, and the pick-and-place port is used for the substrate to be tested to enter and exit the second buffer chamber. The first sampling pipeline is also used to supply fluid to the second buffer chamber through the inlet to purge the substrate to be tested, and the outlet is used to discharge the fluid in the second buffer chamber. An offline detector is used to detect particle parameters on the substrate under test.

10. The substrate processing apparatus according to claim 9, characterized in that, The second buffer cavity also includes: A flow damper is located below the inlet.

11. The substrate processing apparatus according to claim 9, characterized in that, The second buffer cavity also includes: A second heater is used to heat the fluid in the second buffer chamber so that the fluid remains in a gaseous state and is maintained at a set temperature.

12. The substrate processing apparatus according to claim 9, characterized in that, The second buffer cavity also includes: The third temperature sensor is used to detect the temperature inside the second buffer chamber; The second pressure sensor is used to detect the pressure inside the second buffer chamber.

13. The substrate processing apparatus according to claim 9, characterized in that, The inlet of the second buffer chamber is provided with: A third flow meter is used to detect the flow rate of the fluid entering the second buffer chamber.

14. The substrate processing apparatus according to claim 9, characterized in that, The outlet of the second buffer chamber is provided with the following in sequence: The second back pressure valve is used to control the pressure in the second buffer chamber; A fourth flow meter is used to detect the flow rate of the fluid discharged from the second buffer chamber.

15. The substrate processing apparatus according to claim 1, characterized in that, Along the flow direction of the fluid in the fluid supply line, the plurality of hardware terminals sequentially include: A filter for filtering the fluid discharged from the fluid supply unit; A cooling section for cooling the fluid; A buffer tank is used to store the cooled fluid. High-pressure pump; A first heating device is also provided on the fluid supply pipeline. The high-pressure pump is used to pressurize the cooled fluid and deliver it to the first heating device. The first heating device is used to heat the fluid so that the fluid reaches a supercritical temperature.

16. The substrate processing apparatus according to claim 15, characterized in that, The fluid supply pipeline is also equipped with: The fourth temperature sensor and the third pressure sensor are located between the high-pressure pump and the first heating device.

17. The substrate processing apparatus according to claim 16, characterized in that, The fluid supply pipeline is also equipped with: The second heating device and the third back pressure valve form a circulation loop along the flow direction of the fluid in the fluid supply pipeline. The cooling section, the buffer tank, the high-pressure pump, the fourth temperature sensor, the third pressure sensor, the second heating device, and the third back pressure valve form a circulation loop. The second heating device is used to heat the fluid in the circulation loop, and the third back pressure valve is used to control the pressure of the circulation loop.

18. The substrate processing apparatus according to claim 17, characterized in that, Also includes: A third sampling line and a third control valve, wherein the third sampling line connects the circulation loop and the first sampling line, the third control valve is disposed on the third sampling line, and the connection point of the third sampling line and the circulation loop is located between the second heating device and the third pressure sensor.

19. The substrate processing apparatus according to claim 15, characterized in that, The fluid supply pipeline is also equipped with: The fourth control valve is located at the inlet of the first heating device.

20. The substrate processing apparatus according to claim 1, characterized in that, Also includes: A fourth sampling line and a fifth control valve are provided. The fourth sampling line is located at the outlet of the fluid supply section and connects the fluid supply line and the first sampling line. The fifth control valve is located on the fourth sampling line.

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