Battery protection board, battery and electric device
By setting temperature sensors on the substrate to monitor the temperature of the charging and discharging MOSFETs, the problem of inflexible arrangement of the charging and discharging MOSFETs is solved, enabling flexible device arrangement and cost reduction, and improving battery energy density.
Patent Information
- Application Number
- PCT/CN2025/112408
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-08-28
- Filing Date
- 2025-08-04
- Publication Date
- 2026-03-05
AI Technical Summary
In the existing technology, the relative positions of the charging field-effect transistor and the discharging field-effect transistor are subject to greater restrictions, resulting in less flexible arrangement and increasing the difficulty of device arrangement on the substrate.
The temperature of the charging MOSFET and the discharging MOSFET are monitored by a first temperature sensor and a second temperature sensor respectively set on the substrate, which reduces the requirements for the relative position of the charging MOSFET and the discharging MOSFET, allowing them to be arranged more flexibly.
This allows for flexible arrangement of charging and discharging MOSFETs, reduces the mutual influence of thermal radiation, lowers device costs, and improves battery energy density and substrate cost-effectiveness.
Smart Images

Figure CN2025112408_05032026_PF_FP_ABST
Abstract
Description
Battery protection board, battery and electrical equipment
[0001] This application claims priority to Chinese Patent Application No. 202422111986.1, filed on August 28, 2024, entitled "Battery Protection Board, Battery and Electrical Device", the entire contents of which are incorporated herein by reference. Technical Field
[0002] This application relates to the field of battery technology, and in particular to a battery protection board, a battery, and an electrical device. Background Technology
[0003] A battery is an energy storage and power supply device. A battery may include a battery cell and a battery protection board. The battery protection board may include a charging MOSFET and a discharging MOSFET. The charging MOSFET and the discharging MOSFET are electrically connected to the battery cell and can realize the control of charging and discharging of the battery cell.
[0004] In related technologies, the battery protection board also includes a temperature sensor disposed between the charging MOSFET and the discharging MOSFET. The temperature sensor is used to collect the temperature of the charging MOSFET and the discharging MOSFET in order to monitor the temperature of the charging MOSFET and the discharging MOSFET.
[0005] However, in related technologies, the relative positions of the charging MOSFET and the discharging MOSFET are subject to significant limitations, and their arrangement is not flexible enough.
[0006] Utility Model Content
[0007] This application provides a battery protection board, a battery, and an electrical device, which imposes fewer restrictions on the relative positions of the charging MOSFET and the discharging MOSFET, allowing for more flexible arrangement of the charging MOSFET and the discharging MOSFET.
[0008] This application provides a battery protection board, which includes a substrate, a field-effect transistor (FET) assembly, a first temperature sensor, and a second temperature sensor. The FET assembly is disposed on the substrate. The FET assembly includes a charging FET and a discharging FET. The first temperature sensor is disposed at the charging FET and is used to collect the temperature of the charging FET. The second temperature sensor is disposed at the discharging FET and is used to collect the temperature of the discharging FET.
[0009] The battery protection board provided in this application monitors the temperatures of the charging MOSFET and the discharging MOSFET using a first temperature sensor and a second temperature sensor, respectively. This reduces the requirements for the relative positions of the charging MOSFET and the discharging MOSFET, allowing for more flexible arrangement of the charging MOSFET and the discharging MOSFET, and reducing the difficulty of device arrangement on the substrate.
[0010] In one possible implementation, the substrate includes a first region and a second region, which are spaced apart in a first direction. A charging MOSFET and a first temperature sensor are disposed in the first region, and a discharging MOSFET and a second temperature sensor are disposed in the second region.
[0011] In one possible implementation, the substrate has multiple sets of field-effect transistors (FETs) connected in parallel. The charging FET of each FET set is disposed in a first region, and the discharging FET of each FET set is disposed in a second region.
[0012] In one possible implementation, all the charging field-effect transistors are arranged in a straight line along the first direction, and all the discharging field-effect transistors are arranged in a straight line along the first direction.
[0013] In one possible implementation, the charging MOSFET and the discharging MOSFET are arranged in a straight line along a first direction.
[0014] In one possible implementation, the first region includes a first side and a second side opposite to each other along a second direction, both extending along the first direction. The distance between the end of the first temperature sensor near the first side and the first side is greater than the distance between the end of the charging MOSFET near the first side and the first side, or the distance between the end of the first temperature sensor near the second side and the second side is greater than the distance between the end of the charging MOSFET near the second side and the second side.
[0015] The second region includes a third side and a fourth side opposite to each other along a second direction, both of which extend along a first direction. The distance between the end of the second temperature sensor near the third side and the third side is greater than the distance between the end of the discharge field-effect transistor near the third side and the third side, or the distance between the end of the second temperature sensor near the fourth side and the fourth side is greater than the distance between the end of the discharge field-effect transistor near the fourth side and the fourth side. The first direction is perpendicular to the second direction.
[0016] In one possible implementation, the first temperature sensor has charging field-effect transistors on both sides in the first direction.
[0017] In one possible implementation, the second temperature sensor has discharge field-effect transistors on both sides in the first direction.
[0018] In one possible implementation, the dimension of the first temperature sensor in the second direction is greater than or equal to the dimension of the second temperature sensor in the first direction. The dimension of the second temperature sensor in the second direction is greater than or equal to the dimension of the second temperature sensor in the first direction.
[0019] In one possible implementation, the first region includes a first side and a second side opposite to each other along a second direction, the first side and the second side extending along the first direction. The distance between the end of the first temperature sensor away from the first side and the first side is smaller than the distance between the end of the charging MOSFET near the first side and the first side, or the distance between the end of the first temperature sensor away from the second side and the second side is smaller than the distance between the end of the charging MOSFET near the second side and the second side.
[0020] The second region includes a third side and a fourth side opposite to each other along a second direction, both of which extend along a first direction. The distance between the end of the second temperature sensor furthest from the third side and the third side is less than the distance between the end of the discharge field-effect transistor closest to the third side and the third side, or the distance between the end of the second temperature sensor furthest from the fourth side and the fourth side is less than the distance between the end of the discharge field-effect transistor closest to the fourth side and the fourth side.
[0021] In one possible implementation, the dimension of the first temperature sensor in the first direction is greater than or equal to the dimension of the first temperature sensor in the second direction. The dimension of the second temperature sensor in the first direction is greater than or equal to the dimension of the second temperature sensor in the second direction.
[0022] In one possible implementation, the dimension of the charging MOSFET in the second direction is greater than or equal to the dimension of the charging MOSFET in the first direction. The dimension of the discharging MOSFET in the second direction is greater than or equal to the dimension of the discharging MOSFET in the first direction. The first direction is the length direction of the substrate.
[0023] In one possible implementation, the first region includes a fifth side located on one side of the first region in a first direction, and the fifth side extends along a second direction. All the charging MOSFETs are arranged in a straight line along the second direction, the size of the charging MOSFETs in the first direction is greater than or equal to the size of the charging MOSFETs in the second direction, and the distance between the end of the first temperature sensor near the fifth side and the fifth side is greater than the distance between the end of the charging MOSFET away from the fifth side and the fifth side.
[0024] The second region includes a sixth side, which is located on one side of the second region in the first direction and extends along the second direction. All discharge field-effect transistors are arranged in a straight line along the second direction. The size of the discharge field-effect transistors in the first direction is greater than or equal to the size of the discharge field-effect transistors in the second direction. The distance between the end of the second temperature sensor closer to the sixth side and the sixth side is greater than the distance between the end of the discharge field-effect transistor farther from the sixth side and the sixth side.
[0025] In one possible implementation, the distance between the first temperature sensor and the charging MOSFET is smaller than the distance between the first temperature sensor and the discharging MOSFET. Similarly, the distance between the second temperature sensor and the discharging MOSFET is smaller than the distance between the second temperature sensor and the charging MOSFET.
[0026] In one possible implementation, a component is disposed between the charging MOSFET and the discharging MOSFET, and the component disposed between the charging MOSFET and the discharging MOSFET is a non-heating component.
[0027] In one possible implementation, the battery protection board further includes a processor disposed on the substrate, and both the first temperature sensor and the second temperature sensor are electrically connected to the processor.
[0028] This application also provides a battery that includes the battery protection board in any of the above embodiments.
[0029] This application also provides an electrical device, which includes the battery protection board or the battery in any of the above embodiments. Attached Figure Description
[0030] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0031] Figure 1 is a schematic diagram of the electrical connection of an electrical device provided in an embodiment of this application;
[0032] Figure 2 is a schematic diagram of the electrical connection of another type of electrical equipment provided in an embodiment of this application;
[0033] Figure 3 is a schematic diagram of a battery protection board provided in an embodiment of this application;
[0034] Figure 4 is a schematic diagram of the electrical connection between the first temperature sensor and the second temperature sensor of a battery protection board provided in an embodiment of this application.
[0035] Figure 5 is a schematic diagram of another battery protection board provided in an embodiment of this application;
[0036] Figure 6 is a schematic diagram of another battery protection board provided in an embodiment of this application;
[0037] Figure 7 is a schematic diagram of the first region of a battery protection board provided in an embodiment of this application;
[0038] Figure 8 is a schematic diagram of the second region of a battery protection board provided in an embodiment of this application;
[0039] Figure 9 is a schematic diagram of another battery protection board provided in an embodiment of this application;
[0040] Figure 10 is a schematic diagram of the first region of another battery protection board provided in an embodiment of this application;
[0041] Figure 11 is a schematic diagram of the second region of another battery protection board provided in an embodiment of this application.
[0042] Explanation of reference numerals in the attached drawings: 1. Electrical equipment; 10. Battery; 11. Battery cell; 12. Battery protection board; 20. Load; 30. Charging connector; 100. Substrate; 110. First region; 111. First side; 112. Second side; 120. Second region; 121. Third side; 122. Fourth side; 200. Field-effect transistor group; 200a. First field-effect transistor group; 200b. Second field-effect transistor group; 210. Charging field-effect transistor; 210a. First charging field-effect transistor; 210b. Second charging field-effect transistor; 220. Discharging field-effect transistor; 220a. First discharging field-effect transistor; 220b. Second discharging field-effect transistor; 300. First temperature sensor; 400. Second temperature sensor; 500. Processor; 600. Circuit breaker; x. First direction; y. Second direction. Detailed Implementation
[0043] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0044] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, an indirect connection through an intermediate medium, or the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0045] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.
[0046] The terms "first," "second," and "third" (if any) in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a particular order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein.
[0047] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover non-exclusive inclusion, such as a process, method, system, product, or maintenance tool that includes a series of steps or units, not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or maintenance tool.
[0048] Figure 1 is a schematic diagram of the electrical connection of an electrical device provided in an embodiment of this application.
[0049] As shown in Figure 1, this application embodiment provides an electrical device 1, which includes a battery 10, a load 20, and a charging connector 30. The battery 10 is a rechargeable battery and is electrically connected to the load 20. The battery 10 can be used to store electrical energy and supply power to the load 20. The battery 10 is also electrically connected to the charging connector 30, which is used to connect to an external power supply device so that the external power supply device can charge the battery 10 through the charging connector 30.
[0050] For example, the electrical device 1 may include, but is not limited to, a rechargeable vehicle, a rechargeable transport vehicle, a rechargeable home appliance, a rechargeable portable mobile terminal, etc.
[0051] For example, electrical equipment 1 may include, but is not limited to, vehicles, ships, aircraft, audio equipment, robot vacuum cleaners, mobile phones, tablets, laptops, e-readers, wearable devices, etc.
[0052] For example, battery 10 may include, but is not limited to, lithium-ion batteries, lithium metal batteries, lithium polymer batteries, lead-acid batteries, nickel metal hydride batteries, nickel manganese cobalt batteries, lithium sulfur batteries, lithium air batteries, nickel-metal hydride batteries, lithium-ion batteries, iron batteries, nano batteries, etc.
[0053] Figure 2 is a schematic diagram of the electrical connection of another type of electrical equipment provided in an embodiment of this application.
[0054] As shown in Figure 2, the battery 10 includes a casing (not shown), a battery protection board 12, and a battery cell 11. The battery cell 11 is disposed inside the casing and is used for energy storage and power supply. The casing protects the battery cell 11. The battery protection board 12 can be disposed on the casing and is located between the battery cell 11 and the casing. The battery protection board 12 is electrically connected to the battery cell 11 and is also electrically connected to the load 20 and the charging connector 30.
[0055] The battery protection board 12 includes a field-effect transistor group 200, which is electrically connected to the battery cell 11. The field-effect transistor group 200 is also electrically connected to the load 20 and the charging connector 30. In other words, the load 20 and the charging connector 30 are electrically connected to the battery cell 11 through the field-effect transistor group 200. The field-effect transistor group 200 is used to control the charging and discharging of the battery cell 11.
[0056] The field-effect transistor group 200 includes a charging field-effect transistor 210 and a discharging field-effect transistor 220. The load 20 and the charging connector 30 are electrically connected to the charging field-effect transistor 210 and the discharging field-effect transistor 220. The charging field-effect transistor 210 and the discharging field-effect transistor 220 are electrically connected to the battery cell 11. That is, the load 20 and the charging connector 30 are electrically connected to the battery cell 11 through the charging field-effect transistor 210 and the discharging field-effect transistor 220. The charging field-effect transistor 210 and the discharging field-effect transistor 220 are used to control the charging and discharging of the battery cell 11.
[0057] For example, the source of the discharge field-effect transistor 220 is connected to the load 20 and the charging connector 30, the drain of the discharge field-effect transistor 220 is connected to the drain of the charging field-effect transistor 210, the source of the charging field-effect transistor 210 is connected to the battery cell 11, the gate of the charging field-effect transistor 210 and the gate of the discharge field-effect transistor 220 are electrically connected to the control terminal of the controller, the charging field-effect transistor 210 is connected to the charging connector 30 and the load 20 through the discharge field-effect transistor 220, and the discharge field-effect transistor 220 is connected to the battery cell 11 through the charging field-effect transistor 210.
[0058] For example, both the charging field-effect transistor 210 and the discharging field-effect transistor 220 can be metal-oxide-semiconductor field-effect transistors (MOS-FETs).
[0059] The battery protection board 12 also includes a substrate 100 (as shown in Figure 3 below), and a field-effect transistor group 200 is disposed on the substrate 100. That is, the charging field-effect transistor 210 and the discharging field-effect transistor 220 are both disposed on the substrate 100, and the substrate 100 is disposed on the outer casing.
[0060] For example, the substrate 100 can be a rigid circuit board or a flexible circuit board.
[0061] In some examples, the battery protection board 12 may also include a circuit breaker 600, which may be disposed on the substrate 100, and the field-effect transistor group 200 may be electrically connected to the cell 11 through the circuit breaker 600.
[0062] For example, the source of the charging MOSFET 210 can be electrically connected to one end of the circuit breaker 600, and the battery cell 11 can be electrically connected to the other end of the circuit breaker 600.
[0063] In some examples, the battery protection board 12 may also include a processor 500, which may be disposed on the substrate 100.
[0064] For example, the controller electrically connected to the gate of the charging MOSFET 210 and the gate of the discharging MOSFET 220 can be the processor 500 of the battery protection board 12. That is, the gate of the charging MOSFET 210 and the gate of the discharging MOSFET 220 are electrically connected to the control terminals of the processor 500 of the battery protection board 12.
[0065] In related technologies, the battery protection board also includes a temperature sensor disposed between the charging MOSFET and the discharging MOSFET. The temperature sensor is used to collect the temperature of the charging MOSFET and the discharging MOSFET in order to monitor the temperature of the charging MOSFET and the discharging MOSFET.
[0066] However, in related technologies, the temperature of the charging MOSFET and the discharging MOSFET is monitored by a temperature sensor. The charging MOSFET and the discharging MOSFET need to be arranged in a close manner, that is, the charging MOSFET and the discharging MOSFET need to be arranged in a position with a small spacing. This imposes a large restriction on the relative position of the charging MOSFET and the discharging MOSFET is not flexible enough, which will increase the difficulty of device arrangement on the substrate.
[0067] Figure 3 is a schematic diagram of a battery protection board provided in an embodiment of this application. The x-direction is a first direction, and the y-direction is a second direction, with the first and second directions perpendicular to each other. For example, the first direction can be the length direction of the substrate 100, in which case the second direction is the width direction of the substrate 100. Alternatively, the first direction can be the width direction of the substrate 100, in which case the second direction is the length direction of the substrate 100.
[0068] As shown in Figure 3, based on this, in this embodiment of the application, the battery protection board 12 further includes a first temperature sensor 300 and a second temperature sensor 400. The first temperature sensor 300 is disposed at the charging MOSFET 210, and is used to collect the temperature of the charging MOSFET 210 to monitor the temperature of the charging MOSFET 210. The second temperature sensor 400 is disposed at the discharging MOSFET 220, and is used to collect the temperature of the discharging MOSFET 220 to monitor the temperature of the discharging MOSFET 220.
[0069] In this way, the temperatures of the charging MOSFET 210 and the discharging MOSFET 220 are monitored by the first temperature sensor 300 and the second temperature sensor 400, respectively, which reduces the requirements for the relative positions of the charging MOSFET 210 and the discharging MOSFET 220. The charging MOSFET 210 and the discharging MOSFET 220 can be arranged more flexibly, which can reduce the difficulty of device arrangement on the substrate 100.
[0070] In this embodiment, the temperatures of the charging MOSFET 210 and the discharging MOSFET 220 are monitored by a first temperature sensor 300 and a second temperature sensor 400, respectively. A large gap can exist between the charging MOSFET 210 and the discharging MOSFET 220. By separating the charging MOSFET 210 and the discharging MOSFET 220 to increase the gap between them, the mutual influence of thermal radiation during operation can be reduced, thereby lowering their temperatures. Lower temperatures reduce the requirements for selecting the charging MOSFET 210 and the discharging MOSFET 220, thus reducing their cost.
[0071] In some possible implementations, the distance between the first temperature sensor 300 and the charging MOSFET 210 is smaller than the distance between the first temperature sensor 300 and the discharging MOSFET 220. The distance between the second temperature sensor 400 and the discharging MOSFET 220 is smaller than the distance between the second temperature sensor 400 and the charging MOSFET 210.
[0072] This facilitates the monitoring of the temperature of the charging field-effect transistor 210 by the first temperature sensor 300 and the monitoring of the temperature of the discharging field-effect transistor 220 by the second temperature sensor 400. The detection results of the first temperature sensor 300 are less affected by the discharging field-effect transistor 220, and the detection results of the second temperature sensor 400 are less affected by the charging field-effect transistor 210.
[0073] In some possible implementations, a component is disposed between the charging field-effect transistor 210 and the discharging field-effect transistor 220, and the component disposed between the charging field-effect transistor 210 and the discharging field-effect transistor 220 is a non-heating component.
[0074] In this way, components are placed between the charging MOSFET 210 and the discharging MOSFET 220. The placement of these components has a relatively small impact on the temperature of the charging MOSFET 210 and the discharging MOSFET 220, making it less likely for the charging MOSFET 210 and the discharging MOSFET 220 to overheat. This reduces the requirements for selecting the charging MOSFET 210 and the discharging MOSFET 220, and helps to reduce the cost of the charging MOSFET 210 and the discharging MOSFET 220.
[0075] Non-heating components refer to components that do not generate heat when the battery protection board is working, or whose heat generation is insufficient to affect the temperature of the charging MOSFET 210 and the discharging MOSFET 220.
[0076] For example, the substrate 100 includes a first region 110 and a second region 120, which are spaced apart. A charging field-effect transistor 210 and a first temperature sensor 300 are disposed in the first region 110, and a discharging field-effect transistor 220 and a second temperature sensor 400 are disposed in the second region 120.
[0077] In some possible implementations, the first region 110 and the second region 120 are spaced apart in the first direction.
[0078] In this way, when there is sufficient space for arranging devices in the first direction, the dimensions of the substrate 100 in the first direction can be used to set the first region 110 and the second region 120, which helps to reduce the dimensions of the substrate 100 in the second direction. After the dimensions of the substrate 100 in the second direction are reduced, it is beneficial to increase the size of the cell 11, thereby improving the energy density of the battery 10. In addition, the cost of the substrate 100 with a smaller dimensions in the second direction is also lower.
[0079] In some possible implementations, a component is disposed between the first region 110 and the second region 120, and the component disposed between the first region 110 and the second region 120 is a non-heat-generating component.
[0080] Figure 4 is a schematic diagram of the electrical connection between the first temperature sensor and the second temperature sensor of a battery protection board provided in an embodiment of this application.
[0081] In some possible implementations, both the first temperature sensor 300 and the second temperature sensor 400 are electrically connected to the processor 500 of the battery protection board 12.
[0082] This facilitates the control of the battery protection board 12 based on the temperatures collected by the first temperature sensor 300 and the second temperature sensor 400.
[0083] For example, when the temperature collected by the first temperature sensor 300 is higher than the first threshold or the temperature collected by the second temperature sensor 400 is higher than the second threshold, the protection mechanism of the battery protection board 12 can be triggered to ensure the safe and stable operation of the battery 10.
[0084] The processor 500 can be used to generate corresponding control commands based on the temperature and a first threshold collected by the first temperature sensor 300, and the temperature and a second threshold collected by the second temperature sensor 400. Specifically, the processor 500 can generate control commands to trigger the protection mechanism of the battery protection board 12 when the temperature collected by the first temperature sensor 300 is higher than the first threshold or when the temperature collected by the second temperature sensor 400 is higher than the second threshold.
[0085] For example, the processor 500 has a first signal terminal, the first temperature sensor 300 can be a thermistor, one end of the first temperature sensor 300 is grounded, and the other end of the first temperature sensor 300 is electrically connected to the first signal terminal of the processor 500.
[0086] For example, the first signal terminal may be an analog signal terminal for transmitting analog signals.
[0087] For example, the processor 500 has a second signal terminal, the second temperature sensor 400 can be a thermistor, one end of the second temperature sensor 400 is grounded, and the other end of the second temperature sensor 400 is electrically connected to the second signal terminal of the processor 500.
[0088] For example, the second signal terminal may be an analog signal terminal for transmitting analog signals.
[0089] For example, the first temperature sensor 300 and the second temperature sensor 400 can be disposed on the substrate 100, which makes it easier to set up the first temperature sensor 300 and the second temperature sensor 400 and to electrically connect them to the processor 500.
[0090] Figure 5 is a schematic diagram of another battery protection board provided in an embodiment of this application.
[0091] As shown in Figure 5, in some possible embodiments, the substrate 100 is provided with multiple sets of field-effect transistors 200 connected in parallel. The charging field-effect transistor 210 of each set of field-effect transistors 200 is disposed in the first region 110, and the discharging field-effect transistor 220 of each set of field-effect transistors 200 is disposed in the second region 120.
[0092] In this way, the parallel connection of multiple MOSFET groups 200 facilitates meeting the high-power charging and discharging requirements of the battery 10. Furthermore, the charging MOSFETs 210 of each MOSFET group 200 are all located in the first region 110, allowing for a more concentrated arrangement of all charging MOSFETs 210, which is beneficial for the first temperature sensor 300 to monitor the temperature of all charging MOSFETs 210. Similarly, the discharging MOSFETs 220 of each MOSFET group 200 are all located in the second region 120, allowing for a more concentrated arrangement of all discharging MOSFETs 220, which is beneficial for the second temperature sensor 400 to monitor the temperature of all discharging MOSFETs 220. Additionally, the heat radiation generated by each charging MOSFET 210 is less likely to affect any of the discharging MOSFETs 220, and vice versa.
[0093] For example, one end of each MOSFET group 200 is electrically connected to the load 20 and the charging connector 30. For instance, the source of the discharge MOSFET 220 in each MOSFET group 200 is electrically connected to the load 20 and the charging connector 30. The other end of each MOSFET group 200 is electrically connected to the battery cell 11 via a circuit breaker 600. For instance, the source of the charging MOSFET 210 in each MOSFET group 200 is electrically connected to the battery cell 11 via a circuit breaker 600.
[0094] For example, referring to Figure 5, the multiple field-effect transistor (FET) groups 200 may include a first FET group 200a and a second FET group 200b. The first FET group 200a includes a first charging FET 210a and a first discharging FET 220a. The second FET group 200b includes a second charging FET 210b and a second discharging FET 220b. The first charging FET 210a, the second charging FET 210b, and a first temperature sensor 300 are disposed in a first region 110. The first discharging FET 220a, the second discharging FET 220b, and a second temperature sensor 400 are disposed in a second region 120. The first temperature sensor 300 is used to monitor the temperature of the first charging FET 210a and the second charging FET 210b. The second temperature sensor 400 is used to monitor the temperature of the first discharging FET 220a and the second discharging FET 220b.
[0095] In some possible implementations, all the charging field-effect transistors 210 are arranged in a straight line along the second direction.
[0096] In this way, the size of the first region 110 in the first direction is smaller, and when there is sufficient space for arranging devices in the second direction, it is beneficial to increase the size of the cell 11, improve the energy density of the battery 10, and reduce the cost of the substrate 100.
[0097] The first region 110 includes a first side 111 and a second side 112 opposite to each other in a second direction. Both the first side 111 and the second side 112 extend along a first direction and are perpendicular to the second direction. A charging MOSFET 210 and a first temperature sensor 300 are disposed between the first side 111 and the second side 112. Exemplarily, the first side 111 may coincide with the side of the substrate 100, or it may not coincide with the side of the substrate 100. Exemplarily, the second side 112 may coincide with the side of the substrate 100, or it may not coincide with the side of the substrate 100.
[0098] The first region 110 also includes a fifth side, which is located on either side of the first region 110 opposite to the first direction. The fifth side extends along the second direction and is perpendicular to the first direction. The two ends of the fifth side can be connected to the first side 111 and the second side 112, respectively.
[0099] The second region 120 includes a third side 121 and a fourth side 122 opposite to each other in the second direction. Both the third side 121 and the fourth side 122 extend along the first direction and are perpendicular to the second direction. A discharge field-effect transistor 220 and a second temperature sensor 400 are disposed between the third side 121 and the fourth side 122. Exemplarily, the third side 121 may coincide with a side of the substrate 100, or it may not coincide with a side of the substrate 100. Exemplarily, the fourth side 122 may coincide with a side of the substrate 100, or it may not coincide with a side of the substrate 100.
[0100] The second region 120 also includes a sixth side, which is located on either side of the second region 120 opposite to the first direction. The sixth side extends along the second direction and is perpendicular to the first direction. The two ends of the sixth side can be connected to the third side 121 and the fourth side 122, respectively.
[0101] The direction perpendicular to the first side 111 of the charging field-effect transistor 210 is the same as the direction perpendicular to the third side 121 of the discharging field-effect transistor 220.
[0102] The direction perpendicular to the second side 112 from the end of the charging field-effect transistor 210 near the second side 112 is the same as the direction perpendicular to the fourth side 122 from the end of the discharging field-effect transistor 220 near the fourth side 122.
[0103] In some examples where all the charging MOSFETs 210 are arranged in a straight line along the second direction, the distance between the end of the first temperature sensor 300 closest to the fifth side and the fifth side is greater than the distance between the end of the charging MOSFET 210 furthest from the fifth side and the fifth side. This allows the size of the first region 110 in the second direction to be smaller. Furthermore, when the number of charging MOSFETs 210 is large, it facilitates monitoring the temperature of all the charging MOSFETs 210.
[0104] The fifth side can be the side of the first region 110 that is closer to the second region 120, or the fifth side can be the side of the first region 110 that is farther away from the second region 120.
[0105] In some examples where all the charging field-effect transistors 210 are arranged in a straight line along the second direction, the size of the first temperature sensor 300 in the second direction is greater than or equal to the size of the first temperature sensor 300 in the first direction, which can make the size of the first region 110 in the first direction smaller.
[0106] In some examples where all the charging field-effect transistors 210 are arranged in a straight line along the second direction, the size of the charging field-effect transistors 210 in the first direction is greater than or equal to the size of the charging field-effect transistors 220 in the second direction, so as to facilitate the arrangement of a larger number of charging field-effect transistors 210 along the second direction.
[0107] In some possible implementations, all the discharge field-effect transistors 220 are arranged in a straight line along the second direction.
[0108] In this way, the size of the second region 120 in the first direction can be smaller, and when there is sufficient space in the second direction for arranging devices, it is beneficial to increase the size of the cell 11, increase the energy density of the battery 10, and reduce the cost of the substrate 100.
[0109] In some examples where all the discharge field-effect transistors 220 are arranged in a straight line along the second direction, the distance between the end of the second temperature sensor 400 closest to the sixth side and the sixth side is greater than the distance between the end of the discharge field-effect transistor 220 furthest from the sixth side and the sixth side. This allows the second region 120 to have a smaller size in the second direction. Furthermore, when the number of discharge field-effect transistors 220 is large, it facilitates monitoring the temperature of all the discharge field-effect transistors 220.
[0110] The sixth side can be the side of the second region 120 that is closer to the first region 110, or the sixth side can be the side of the second region 120 that is farther away from the first region 110.
[0111] In some examples where all the discharge field-effect transistors 220 are arranged in a straight line along the second direction, the size of the second temperature sensor 400 in the second direction is greater than or equal to the size of the second temperature sensor 400 in the first direction, which can make the size of the second region 120 in the first direction smaller.
[0112] In some examples where all the discharge field-effect transistors 220 are arranged in a straight line along the second direction, the size of the discharge field-effect transistors 220 in the first direction is greater than or equal to the size of the discharge field-effect transistors 220 in the second direction, so as to facilitate the arrangement of a larger number of discharge field-effect transistors 220 along the second direction.
[0113] Figure 6 is a schematic diagram of another battery protection board provided in an embodiment of this application.
[0114] As shown in Figure 6, in some possible implementations, all the charging field-effect transistors 210 are arranged in a straight line along the first direction.
[0115] In this way, the size of the first region 110 in the second direction can be smaller. When there is sufficient space in the first direction for arranging devices, it is beneficial to increase the size of the cell 11, increase the energy density of the battery 10, and reduce the cost of the substrate 100.
[0116] For example, the first charging MOSFET 210a and the second charging MOSFET 210b are arranged in a straight line along the first direction.
[0117] In some possible implementations, all the discharge field-effect transistors 220 are arranged in a straight line along the first direction.
[0118] In this way, the second region 120 can be smaller in size in the second direction, and when there is sufficient space in the first direction for arranging devices, it is beneficial to increase the size of the cell 11, increase the energy density of the battery 10, and reduce the cost of the substrate 100.
[0119] For example, the first discharge field-effect transistor 220a and the second discharge field-effect transistor 220b are arranged in a straight line along the first direction.
[0120] In some possible implementations, the charging field-effect transistor 210 and the discharging field-effect transistor 220 are arranged in a straight line along a first direction. That is, when multiple sets of field-effect transistor groups 200 connected in parallel are provided on the substrate 100, all the charging field-effect transistors 210 and all the discharging field-effect transistors 220 are arranged in a straight line along the first direction.
[0121] This allows the substrate 100 to be smaller in the second direction, while having sufficient space in the first direction for arranging devices, which is beneficial for increasing the size of the cell 11, improving the energy density of the battery 10, and reducing the cost of the substrate 100.
[0122] For example, the first charging field-effect transistor 210a, the second charging field-effect transistor 210b, the first discharging field-effect transistor 220a, and the second discharging field-effect transistor 220b are arranged in a straight line along the first direction.
[0123] In some possible implementations, the dimension of the charging MOSFET 210 in the second direction is greater than or equal to the dimension of the charging MOSFET 210 in the first direction.
[0124] This facilitates the arrangement of a large number of charging field-effect transistors 210 along the first direction.
[0125] In some examples, each charging MOSFET 210 has the same dimensions in the first direction.
[0126] In some possible implementations, the dimension of the discharge field-effect transistor 220 in the second direction is greater than or equal to the dimension of the discharge field-effect transistor 220 in the first direction.
[0127] This facilitates the arrangement of a larger number of discharge field-effect transistors 220 along the first direction.
[0128] In some examples, each discharge field-effect transistor 220 has the same dimensions in the first direction.
[0129] In some examples, the dimensions of the charging MOSFET 210 in the first direction are the same as those of the discharging MOSFET 220 in the first direction.
[0130] In some examples, the dimensions of the charging MOSFET 210 in the second direction are the same as those of the discharging MOSFET 220 in the second direction.
[0131] In some examples, the size of the charging MOSFET 210 in the first direction is the same as its size in the second direction. Similarly, the size of the discharging MOSFET 220 in the first direction is the same as its size in the second direction. For example, both the size of the charging MOSFET 210 in the first direction and the size of the discharging MOSFET 220 in the second direction can be 3.3 mm, and both the size of the discharging MOSFET 220 in the first direction and the size of the discharging MOSFET 220 in the second direction can be 3.3 mm.
[0132] For example, the first direction is the length direction of the substrate 100, and the second direction is the width direction of the substrate 100. In this way, it is advantageous to reduce the width of the substrate 100, and when there is sufficient space for arranging devices in the length direction of the substrate 100, it is advantageous to increase the size of the cell 11, increase the energy density of the battery 10, and reduce the cost of the substrate 100.
[0133] Figure 7 is a schematic diagram of the first region of a battery protection board provided in an embodiment of this application.
[0134] As shown in Figure 7, in some possible embodiments, the distance between the end of the first temperature sensor 300 away from the first side 111 and the first side 111 is smaller than the distance between the end of the charging MOSFET 210 near the first side 111 and the first side 111; or the distance between the end of the first temperature sensor 300 away from the second side 112 and the second side 112 is smaller than the distance between the end of the charging MOSFET 210 near the second side 112 and the second side 112. The first temperature sensor 300 is located between the first side 111 and the end of the charging MOSFET 210 near the first side 111; or, the first temperature sensor 300 is located between the second side 112 and the end of the charging MOSFET 210 near the second side 112.
[0135] In this way, when there are a large number of charging field-effect transistors 210, it is convenient to place the first temperature sensor 300 in a position with a higher temperature in the first region 110, so that the first temperature sensor 300 can monitor the temperature of all charging field-effect transistors 210.
[0136] For example, a portion of the first temperature sensor 300 is located between the first side 111 and the end of the first charging field-effect transistor 210a near the first side 111, and a portion of the first temperature sensor 300 is located between the first side 111 and the end of the second charging field-effect transistor 210b near the first side 111. This allows for a more compact arrangement between the first charging field-effect transistor 210a and the second charging field-effect transistor 210b, which helps to reduce the size of the first region 110 in the first direction.
[0137] In some examples where the first temperature sensor 300 is located between the first side 111 and the end of the charging field-effect transistor 210 near the first side 111, the size of the first temperature sensor 300 in the first direction is greater than or equal to the size of the first temperature sensor 300 in the second direction.
[0138] In this way, the size of the first region 110 in the second direction can be smaller. When there is sufficient space in the first direction for arranging devices, it is beneficial to increase the size of the cell 11, increase the energy density of the battery 10, and reduce the cost of the substrate 100.
[0139] As shown in Figure 7, at this time, along the second direction, the distance between the first temperature sensor 300 and the first side 111 is G1, the width of the first temperature sensor 300 is W1, the distance between the first temperature sensor 300 and the end of the charging field effect transistor 210 near the first side 111 is G2, the length of the charging field effect transistor 210 is L1, the distance between the end of the charging field effect transistor 210 near the second side 112 and the second side 112 is G3, and the width of the substrate 100 in the first region 110 is W2. At this time, W2 = G1 + W1 + G2 + L1 + G3.
[0140] For example, L1 can be 3.3mm, W1 can be 0.5mm, G2 can be 0.4mm, G3 can be 0.5mm, and G1 can be 0.5mm. In this case, W2 can be 5.2mm.
[0141] Figure 8 is a schematic diagram of the second region of a battery protection board provided in an embodiment of this application.
[0142] As shown in Figure 8, in some possible embodiments, the distance between the end of the second temperature sensor 400 furthest from the third side 121 and the third side 121 is smaller than the distance between the end of the discharge field-effect transistor 220 closest to the third side 121 and the third side 121; or the distance between the end of the second temperature sensor 400 furthest from the fourth side 122 and the fourth side 122 is smaller than the distance between the end of the discharge field-effect transistor 220 closest to the fourth side 122 and the fourth side 122. The second temperature sensor 400 is located between the third side 121 and the end of the discharge field-effect transistor 220 closest to the third side 121. Alternatively, the second temperature sensor 400 is located between the fourth side 122 and the end of the discharge field-effect transistor 220 closest to the fourth side 122.
[0143] In this way, when there are a large number of discharge field-effect transistors 220, it is convenient to place the second temperature sensor 400 at a higher temperature position in the second region 120, so that the second temperature sensor 400 can monitor the temperature of all discharge field-effect transistors 220.
[0144] Furthermore, when the charging field-effect transistor 210 and the discharging field-effect transistor 200 are linearly distributed along the first direction, the end of the charging field-effect transistor 210 near the first temperature sensor 300 in the second direction and the end of the discharging field-effect transistor 220 near the second temperature sensor 400 in the second direction have the same orientation. This allows the substrate 100 to be smaller in the second direction. When there is sufficient space for arranging devices in the first direction, it is beneficial to increase the size of the cell 11, improve the energy density of the battery 10, and reduce the cost of the substrate 100.
[0145] For example, a portion of the second temperature sensor 400 is located between the third side 121 and the end of the first discharge field-effect transistor 220a near the third side 121, and a portion of the second temperature sensor 400 is located between the third side 121 and the end of the second discharge field-effect transistor 220b near the third side 121. This allows for a more compact arrangement between the first discharge field-effect transistor 220a and the second discharge field-effect transistor 220b, which helps to reduce the size of the second region 120 in the first direction.
[0146] In some examples where the second temperature sensor 400 is located between the third side 121 and the end of the discharge field-effect transistor 220 near the third side 121, the size of the second temperature sensor 400 in the first direction is greater than or equal to the size of the second temperature sensor 400 in the second direction.
[0147] In this way, the second region 120 can be smaller in size in the second direction, and when there is sufficient space in the first direction for arranging devices, it is beneficial to increase the size of the cell 11, increase the energy density of the battery 10, and reduce the cost of the substrate 100.
[0148] As shown in Figure 8, at this time, along the second direction, the distance between the second temperature sensor 400 and the third side 121 is G4, the width of the second temperature sensor 400 is W3, the distance between the second temperature sensor 400 and the end of the discharge field effect transistor 220 near the third side 121 is G5, the length of the discharge field effect transistor 220 is L2, the distance between the end of the discharge field effect transistor 220 near the fourth side 122 and the fourth side 122 is G6, and the width of the substrate 100 in the second region 120 is W4. At this time, W4 = G4 + W3 + G5 + L2 + G6.
[0149] For example, L2 can be 3.3mm, W3 can be 0.5mm, G5 can be 0.4mm, G4 can be 0.5mm, G6 can be 0.5mm, and W4 can be 5.2mm, so W2 equals W4.
[0150] As shown in Figure 6, in some possible implementations, the first temperature sensor 300 and the second temperature sensor 400 are arranged in a straight line along a first direction.
[0151] In this way, when the first temperature sensor 300 is arranged on the side of the charging field-effect transistor 210 in the second direction and the second temperature sensor 400 is arranged on the side of the discharging field-effect transistor 220 in the second direction, the size of the substrate 100 in the second direction can be smaller. When there is sufficient space for arranging devices in the first direction, it is beneficial to increase the size of the cell 11, improve the energy density of the battery 10, and reduce the cost of the substrate 100.
[0152] Figure 9 is a schematic diagram of another battery protection board provided in an embodiment of this application, and Figure 10 is a schematic diagram of the first region of another battery protection board provided in an embodiment of this application.
[0153] As shown in Figures 9 and 10, in some possible implementations, the distance between the end of the first temperature sensor 300 near the first side 111 and the first side 111 is greater than the distance between the end of the charging field-effect transistor 210 near the first side 111 and the first side 111.
[0154] In this way, the size of the first region 110 in the second direction can be smaller. When there is sufficient space in the first direction for arranging devices, it is beneficial to increase the size of the cell 11, increase the energy density of the battery 10, and reduce the cost of the substrate 100.
[0155] The distance between the end of the first temperature sensor 300 near the second side 112 and the second side 112 is greater than the distance between the end of the charging field effect transistor 210 near the second side 112 and the second side 112.
[0156] In this way, the size of the first region 110 in the second direction can be smaller. When there is sufficient space in the first direction for arranging devices, it is beneficial to increase the size of the cell 11, increase the energy density of the battery 10, and reduce the cost of the substrate 100.
[0157] In some examples where the distance between the end of the first temperature sensor 300 near the first side 111 and the first side 111 is greater than the distance between the end of the charging field effect transistor 210 near the first side 111 and the first side 111, and the distance between the end of the first temperature sensor 300 near the second side 112 and the second side 112 is greater than the distance between the end of the charging field effect transistor 210 near the second side 112 and the second side 112, the first temperature sensor 300 is provided with charging field effect transistors 210 on both sides in the first direction.
[0158] This allows the first temperature sensor 300 to monitor the temperature of the multiple charging MOSFETs 210 more accurately.
[0159] For example, in the first direction, the first temperature sensor 300 is disposed between the first charging MOSFET 210a and the second charging MOSFET 210b.
[0160] In some examples where the distance between the end of the first temperature sensor 300 near the first side 111 and the first side 111 is greater than the distance between the end of the charging MOSFET 210 near the first side 111 and the first side 111, and the distance between the end of the first temperature sensor 300 near the second side 112 and the second side 112 is greater than the distance between the end of the charging MOSFET 210 near the second side 112 and the second side 112, the dimension of the first temperature sensor 300 in the second direction is greater than or equal to the dimension of the first temperature sensor 300 in the first direction.
[0161] In this way, the first temperature sensor 300 occupies less space in the substrate 100 in the first direction, which is beneficial to reduce the size of the first region 110 in the first direction.
[0162] As shown in Figure 10, at this time, along the second direction, the distance between the first side 111 and the end of the charging field-effect transistor 210 near the first side 111 is G7, the length of the charging field-effect transistor 210 is L1, the distance between the second side 112 and the end of the charging field-effect transistor 210 near the second side 112 is G8, and the width of the substrate 100 in the first region 110 is W5, where W5 = G7 + L1 + G8.
[0163] For example, L1 can be 3.3mm, G7 and G8 can both be 0.5mm, and W5 can be 4.3mm, which is less than W2.
[0164] Figure 11 is a schematic diagram of the second region of another battery protection board provided in an embodiment of this application.
[0165] As shown in Figure 11 and referring to Figure 9, in some possible embodiments, the distance between the end of the second temperature sensor 400 near the third side 121 and the third side 121 is greater than the distance between the end of the discharge field effect transistor 220 near the third side 121 and the third side 121.
[0166] In this way, the second region 120 can be smaller in size in the second direction, and when there is sufficient space in the first direction for arranging devices, it is beneficial to increase the size of the cell 11, increase the energy density of the battery 10, and reduce the cost of the substrate 100.
[0167] The distance between the end of the second temperature sensor 400 near the fourth side 122 and the fourth side 122 is greater than the distance between the end of the discharge field effect transistor 220 near the fourth side 122 and the fourth side 122.
[0168] In this way, the second region 120 can be smaller in size in the second direction, and when there is sufficient space in the first direction for arranging devices, it is beneficial to increase the size of the cell 11, increase the energy density of the battery 10, and reduce the cost of the substrate 100.
[0169] In some examples where the distance between the end of the second temperature sensor 400 near the third side 121 and the third side 121 is greater than the distance between the end of the discharge field effect transistor 220 near the third side 121 and the third side 121, and the distance between the end of the second temperature sensor 400 near the fourth side 122 and the fourth side 122 is greater than the distance between the end of the discharge field effect transistor 220 near the fourth side 122 and the fourth side 122, the second temperature sensor 400 is provided with discharge field effect transistors 220 on both sides in the first direction.
[0170] This allows the second temperature sensor 400 to monitor the temperature of the multiple discharge field-effect transistors 220 more accurately.
[0171] For example, in the first direction, the second temperature sensor 400 is disposed between the first discharge field-effect transistor 220a and the second discharge field-effect transistor 220b.
[0172] In some examples where the distance between the end of the second temperature sensor 400 near the third side 121 and the third side 121 is greater than the distance between the end of the discharge field effect transistor 220 near the third side 121 and the third side 121, and the distance between the end of the second temperature sensor 400 near the fourth side 122 and the fourth side 122 is greater than the distance between the end of the discharge field effect transistor 220 near the fourth side 122 and the fourth side 122, the dimension of the second temperature sensor 400 in the second direction is greater than or equal to the dimension of the second temperature sensor 400 in the first direction.
[0173] In this way, the second temperature sensor 400 occupies less space in the substrate 100 in the first direction, which is beneficial to reduce the size of the second region 120 in the first direction.
[0174] As shown in Figure 11, at this time, along the second direction, the distance between the third side 121 and the end of the discharge field-effect transistor 220 near the third side 121 is G9, the length of the discharge field-effect transistor 220 is L2, the distance between the fourth side 122 and the end of the discharge field-effect transistor 220 near the fourth side 122 is G10, and the width of the substrate 100 in the second region 120 is W6, where W6 = G9 + L2 + G10.
[0175] For example, L2 can be 3.3mm, G9 and G10 can both be 0.5mm, and W6 can be 4.3mm, which is equal to W5.
[0176] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.
Claims
1. A battery protection board (12), wherein, It includes a substrate (100), a field-effect transistor assembly (200), a first temperature sensor (300), and a second temperature sensor (400); The field-effect transistor assembly (200) is disposed on the substrate (100); The field-effect transistor group (200) includes a charging field-effect transistor (210) and a discharging field-effect transistor (220); The first temperature sensor (300) is disposed at the charging MOSFET (210), and the first temperature sensor (300) is used to collect the temperature of the charging MOSFET (210); The second temperature sensor (400) is disposed at the discharge field-effect transistor (220) and is used to collect the temperature of the discharge field-effect transistor (220).
2. The battery protection board (12) according to claim 1, wherein, The substrate (100) includes a first region (110) and a second region (120), the first region (110) and the second region (120) being spaced apart in a first direction; The charging field-effect transistor (210) and the first temperature sensor (300) are disposed in the first region (110), and the discharging field-effect transistor (220) and the second temperature sensor (400) are disposed in the second region (120).
3. The battery protection board (12) according to claim 2, wherein, The substrate (100) is provided with multiple sets of field-effect transistors (200) connected in parallel with each other; The charging field-effect transistor (210) of each group of field-effect transistors (200) is disposed in the first region (110), and the discharging field-effect transistor (220) of each group of field-effect transistors (200) is disposed in the second region (120).
4. The battery protection board (12) according to claim 3, wherein, All of the charging field-effect transistors (210) are arranged in a straight line along the first direction, and all of the discharging field-effect transistors (220) are arranged in a straight line along the first direction.
5. The battery protection board (12) according to claim 4, wherein, The charging field-effect transistor (210) and the discharging field-effect transistor (220) are arranged in a straight line along the first direction.
6. The battery protection board (12) according to claim 4 or 5, wherein, The first region (110) includes a first side (111) and a second side (112) opposite each other along a second direction, both the first side (111) and the second side (112) extending along the first direction; The distance between the end of the first temperature sensor (300) near the first side (111) and the first side (111) is greater than the distance between the end of the charging field effect transistor (210) near the first side (111) and the first side (111), or the distance between the end of the first temperature sensor (300) near the second side (112) and the second side (112) is greater than the distance between the end of the charging field effect transistor (210) near the second side (112) and the second side (112); The second region (120) includes a third side (121) and a fourth side (122) opposite each other along a second direction, both of which extend along the first direction; The distance between the end of the second temperature sensor (400) near the third side (121) and the third side (121) is greater than the distance between the end of the discharge field effect transistor (220) near the third side (121) and the third side (121), or the distance between the end of the second temperature sensor (400) near the fourth side (122) and the fourth side (122) is greater than the distance between the end of the discharge field effect transistor (220) near the fourth side (122) and the fourth side (122); Wherein, the first direction is perpendicular to the second direction.
7. The battery protection board (12) according to claim 6, wherein, The first temperature sensor (300) has the charging field-effect transistor (210) on both sides in the first direction; The second temperature sensor (400) has the discharge field effect transistor (220) on both sides in the first direction.
8. The battery protection board (12) according to claim 6 or 7, wherein, The dimension of the first temperature sensor (300) in the second direction is greater than or equal to the dimension of the first temperature sensor (300) in the first direction; The dimension of the second temperature sensor (400) in the second direction is greater than or equal to the dimension of the second temperature sensor (400) in the first direction.
9. The battery protection board (12) according to claim 4 or 5, wherein, The first region (110) includes a first side (111) and a second side (112) opposite each other along a second direction, the first side (111) and the second side (112) extending along the first direction; The distance between the end of the first temperature sensor (300) away from the first side (111) and the first side (111) is less than the distance between the end of the charging field effect transistor (210) near the first side (111) and the first side (111), or the distance between the end of the first temperature sensor (300) away from the second side (112) and the second side (112) is less than the distance between the end of the charging field effect transistor (210) near the second side (112) and the second side (112); The second region (120) includes a third side (121) and a fourth side (122) opposite each other along a second direction, both of which extend along the first direction; The distance between the end of the second temperature sensor (400) away from the third side (121) and the third side (121) is smaller than the distance between the end of the discharge field effect transistor (220) near the third side (121) and the third side (121), or the distance between the end of the second temperature sensor (400) away from the fourth side (122) and the fourth side (122) is smaller than the distance between the end of the discharge field effect transistor (220) near the fourth side (122) and the fourth side (122); Wherein, the first direction is perpendicular to the second direction.
10. The battery protection board (12) according to claim 9, wherein, The dimension of the first temperature sensor (300) in the first direction is greater than or equal to the dimension of the first temperature sensor (300) in the second direction; The size of the second temperature sensor (400) in the first direction is greater than or equal to the size of the second temperature sensor (400) in the second direction.
11. The battery protection board (12) according to any one of claims 2-10, wherein, The dimension of the charging field-effect transistor (210) in the second direction is greater than or equal to the dimension of the charging field-effect transistor (210) in the first direction; The dimension of the discharge field-effect transistor (220) in the second direction is greater than or equal to the dimension of the discharge field-effect transistor (220) in the first direction; Wherein, the first direction is the length direction of the substrate (100).
12. The battery protection board (12) according to any one of claims 3-11, wherein, The first region (110) includes a fifth side, which is located on one side of the first region (110) in the first direction and extends along the second direction; All of the charging field-effect transistors (210) are arranged in a straight line along the second direction. The size of the charging field-effect transistor (210) in the first direction is greater than or equal to the size of the charging field-effect transistor (210) in the second direction. The distance between the end of the first temperature sensor (300) near the fifth side and the fifth side is greater than the distance between the end of the charging field-effect transistor (210) away from the fifth side and the fifth side. The second region (120) includes a sixth side, which is located on one side of the second region (120) in the first direction and extends along the second direction; All of the discharge field effect transistors (220) are arranged in a straight line along the second direction. The size of the discharge field effect transistor (220) in the first direction is greater than or equal to the size of the discharge field effect transistor in the second direction. The distance between the end of the second temperature sensor (400) near the sixth side and the sixth side is greater than the distance between the end of the discharge field effect transistor (220) away from the sixth side and the sixth side.
13. The battery protection board (12) according to any one of claims 1-12, wherein, It also includes a processor (500); The processor (500) is disposed on the substrate (100); Both the first temperature sensor (300) and the second temperature sensor (400) are electrically connected to the processor (500).
14. The battery protection board (12) according to any one of claims 1-13, wherein, The distance between the first temperature sensor (300) and the charging field-effect transistor (210) is smaller than the distance between the first temperature sensor (300) and the discharging field-effect transistor (220); The distance between the second temperature sensor (400) and the discharge field-effect transistor (220) is smaller than the distance between the second temperature sensor (400) and the charging field-effect transistor (210).
15. The battery protection board (12) according to any one of claims 1-14, wherein, A component is disposed between the charging field-effect transistor (210) and the discharging field-effect transistor (220), and the component disposed between the charging field-effect transistor (210) and the discharging field-effect transistor (220) is a non-heating component.
16. A battery (10), wherein, Includes the battery protection board (12) as described in any one of claims 1-15.
17. An electrical appliance (1), wherein, Includes the battery protection board (12) as described in any one of claims 1-15 or the battery (10) as described in claim 16.
Citation Information
Patent Citations
Protecting apparatus, and protecting method, signal processing method and electrical quantity detecting method employed by the protecting apparatus
CN101346866A
Power supply device
CN116889104A
Current control device and storage battery
CN219938006U
Battery protection board, battery and electric equipment
CN223023325U
Battery pack
US20150044511A1