Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device

Abstract

[Problem] An electronic device manufacturing aqueous solution that enables suppression of defects is provided. [Means of Solution] An electronic device manufacturing aqueous solution, comprising a hydrocarbon surfactant (A) and a solvent (S), wherein the hydrocarbon surfactant (A) does not contain fluorine, the solvent (S) comprises water (S-1), the pH of the electronic device manufacturing aqueous solution is 7.5 to 12.0.

Description

[DESCRIPTION][Title of Invention] ELECTRONIC DEVICE MANUFACTURING AQUEOUS SOLUTION, METHOD FOR PRODUCING RESIST PATTERN, AND METHOD FOR MANUFACTURING DEVICE[Technical Field]

[0001] The present disclosure relates to an electronic device manufacturing aqueous solution, a method for producing a resist pattern, and a method for manufacturing a device.[Background Art]

[0002] In recent years, there is an increasing need for highly integrated LSIs, and pattern miniaturization is demanded. In order to meet these needs, lithography processes using short wavelength KrF excimer laser (248 nm), ArF excimer laser (193 nm), extreme ultraviolet radiation (EUV; 13 nm), X-rays, electron beams, or the like are being put into practical use. In order to deal with the miniaturization of resist patterns, a photosensitive resin composition used as a resist in microfabrication is also required to have properties for high resolution. Shortwavelength light exposure can form finer patterns, however, due to creating very fine structures, there is an issue of reduced yield such as fine pattern collapse.

[0003] PTL 1 describes a specific rinse composition comprising a non-ionic fluorinated surfactant and a basic additive comprising tetraalkylammonium hydroxide.PTL 2 describes a replacement liquid of liquid filling between resist patterns comprising a sulfonyl group-containing compound, a nitrogen-containing compound and a solvent.PTL 3 describes an electronic device manufacturing solution comprising at least an anionic surfactant, a solvent, and a quaternary ammonium compound.PTL 4 describes a cleaning treatment liquid comprising a basic compound which is an inorganic alkali compound and two specific surfactants.[Citation List][Patent Literature]

[0004] [PTL 1] Japanese Patent Application Publication No. 2023-504507 [PTL 2] Japanese Patent Application Publication No. 2023-502837 [PTL 3] International Publication No. 2023 / 170021[PTL 4] Japanese Patent Application Publication No. 2007-254510 [Summary of Invention] [Technical Problem]

[0005] The inventors believed that there were still one or more issues that needed to be improved. Examples thereof include: reducing defects in a fine resist pattern; suppressing bridge generation in a resist pattern; enabling formation of a finer resist pattern; preventing resist pattern collapse in a fine resist pattern; suppressing film thickness variation in a resist pattern; reducing the number of rinsing steps after the use of an electronic device manufacturing aqueous solution; reducing residues after removal of an electronic device manufacturing aqueous solution; the occurrence of problems due to mixing with other manufacturing materials; reducing surface tension of an electronic device manufacturing aqueous solution; providing an electronic device manufacturing aqueous solution exhibiting a low handling risk; providing an electronic device manufacturing aqueous solution with excellent storage stability (for example, long-term storage); providing an electronic device manufacturing aqueous solution exerting less impact on resist patterns; and providing an electronic device manufacturing aqueous solution exerting less environmental impact.The present invention has been made based on the technical background described above, and provides an electronic device manufacturing aqueous solution.[Solution to Problem]

[0006] An electronic device manufacturing aqueous solution according to an embodiment comprises:a hydrocarbon surfactant (A) and a solvent (S); wherein the hydrocarbon surfactant (A) does not contain fluorine, the solvent (S) comprises water (S-1 ), and the pH of the electronic device manufacturing aqueous solution is 7.5 to 12.0.A method for producing a resist pattern according to an embodiment comprises using the above-described electronic device manufacturing aqueous solution.A method for manufacturing a device according to an embodiment comprises the above-described method for producing a resist pattern.[Advantageous Effects of Invention]

[0007] By using the electronic device manufacturing aqueous solution of the present disclosure, one or more of the following effects can be achieved. Defects in a fine resist pattern can be reduced. Bridge generation in a resist pattern can be suppressed. A finer resist pattern can be formed. Resist pattern collapse in a fine resist pattern can be prevented. Film thickness variation in a resist pattern can be suppressed. The number of rinsing steps after use of an electronic device manufacturing aqueous solution can be reduced. Residues after removal of an electronic device manufacturing aqueous solution can be reduced. Problems due to mixing with other manufacturing materials can be avoided. Surface tension of an electronic device manufacturing aqueous solution can be reduced. An electronic device manufacturing aqueous solution exhibiting a low handling risk can be provided. An electronic device manufacturing aqueous solution with excellent storage stability (for example, long-term storage) can be provided. An electronic device manufacturing aqueous solution exerting less impact on resist patterns can be provided. An electronic device manufacturing aqueous solution exerting less environmental impact can be provided.The above description should not be construed as disclosing all embodiments of the present invention and all advantages of the present invention.[Description of Embodiments]

[0008] Hereinafter, embodiments of the present invention will be described, but the present invention is not limited to these embodiments, and various applications are possible within the spirit and scope of the present invention.

[0009] DefinitionsIn this disclosure, unless specifically stated otherwise, each term and reference numeral will follow the definitions or examples set forth in this paragraph.The singular shall include the plural, and “a” or “the” means “at least one”. An element of a concept can be expressed by a plurality of types, and when an amount (for example, mass%, or mol%) thereof is described, the amount thereof means a sum of the plurality of types thereof.“And / or” includes all combinations of elements and also includes use of either one of the elements.When a numerical range is indicated using “to” orboth end points are included in the range, and the units are common. For example, 5 to 25 mol% means 5 mol% or more and 25 mol% or less.Descriptions such as “Cx-y”, “Cx-Cy” and “Cx” mean the number of carbon atoms in a molecule or a substituent. For example, C1-6 alkyl means an alkyl chain having from 1 to 6 carbon atoms (such as methyl, ethyl, propyl, butyl, pentyl, or hexyl).When a polymer includes multiple types of structural units, in the polymer, monomers that generate these structural units are copolymerized. The copolymerization may be any of alternating copolymerization, random copolymerization, block copolymerization, graft copolymerization, or a mixture thereof. When a polymer or a resin is represented by a structural formula, a variable following the parenthesis, such as n or m, represents the number of structural units.The unit of temperature used is Celsius temperature (degree Celsius). For example, 20 degrees means 20 degrees Celsius.An additive refers to a compound itself that has that function. For example, a base generator refers to a compound itself that generates a base. There may also be an embodiment in which the compound is dissolved or dispersed in a solvent and is added to a composition. As an embodiment, such a solvent is preferablycontained as the solvent (S) or other component in the composition according to the present disclosure.

[0010] Electronic Device Manufacturing Aqueous Solution>The electronic device manufacturing aqueous solution according to an embodiment comprises a hydrocarbon surfactant (A) and a solvent (S). The hydrocarbon surfactant (A) does not contain fluorine.In the present disclosure, the electronic device manufacturing aqueous solution is used during a manufacturing process of an electronic device. The electronic device manufacturing aqueous solution simply needs to be used in a manufacturing process of an electronic device, and may be removed or eliminated in the course of the process. Examples of the electronic device include display devices, LEDs, and semiconductor devices.The electronic device manufacturing aqueous solution may be a semiconductor manufacturing aqueous solution; preferably a semiconductor substrate fabricating aqueous solution; more preferably a semiconductor substrate fabrication process cleaning liquid; still more preferably a lithography cleaning liquid; and even more preferably a resist pattern cleaning liquid. The electronic device manufacturing aqueous solution, which is a semiconductor substrate fabricating aqueous solution, can also be referred to as a semiconductor substrate fabricating aqueous solution, which consists only of the electronic device manufacturing aqueous solution of the present disclosure.As another embodiment, the electronic device manufacturing aqueous solution may be a rinse composition used for rinsing an exposed and developed resist pattern.

[0011] Hydrocarbon surfactant (A)The hydrocarbon surfactant (A) is not particularly limited as long as it has a surface tension reducing effect. The surface tension of an aqueous solution prepared by adding the hydrocarbon surfactant (A) at a concentration of 500ppm in water (S-1 ) is preferably 30 to 70%, more preferably 35 to 65%, and still more preferably 40 to 60% of the surface tension of a liquid which consists only of water(S-1 ). The surface tension is measured with a capillary rise type surface tensiometer.

[0012] 1 molecule of the hydrocarbon surfactant (A) preferably has 8 to 30 carbon atoms, more preferably 8 to 25 carbon atoms, and still more preferably 8 to 20 carbon atoms.

[0013] Mw of the hydrocarbon surfactant (A) is preferably 100 to 800, more preferably 115 to 770, and still more preferably 115 to 740. Mw is molecular weight when the hydrocarbon surfactant (A) is a single molecule. In the present disclosure, the mass average molecular weight of the hydrocarbon surfactant (A) is in terms of polystyrene, which is measured by gel permeation chromatography reference on polystyrene standard.The molar volume of the hydrocarbon surfactant (A) is preferably 100 to 1 ,000 m3 / mol, more preferably 150 to 800 m3 / mol, and still more preferably 160 to 600 m3 / mol.

[0014] pKa (H2O) of the hydrocarbon surfactant (A) is preferably -5.0 to 20.0, more preferably -4.5 to 19.5, and still more preferably -4.0 to 19.0. The hydrocarbon surfactant (A) having pKa (H2O) in the above range is ionized in the electronic device manufacturing aqueous solution in pH 7.5 to 12.0 range. In the present disclosure, pKa (H2O) of the hydrocarbon surfactant (A) is determined based on the pH value measured by preparing a calibration curve using three or more standard solutions for calibration under conditions of 25°C, atmospheric conditions and 1 atm, and using a pH meter. Preferably, the pH meter used is the device described in the examples.The present invention includes an embodiment in which the hydrocarbon surfactant (A) is ionically separated in the electronic device manufacturing aqueous solution by water (S-1 ) (more preferably, it is in an equilibrium state). In the following description, a specific embodiment of the hydrocarbon surfactant (A) is based on the state before being added to the solvent (S). A specific embodimentincludes a content. In the present disclosure, the same applies to other components unless otherwise specified.

[0015] In one preferred embodiment of the present disclosure, the hydrocarbon surfactant (A) comprises a structure represented by formula (A).[C1]formula (A)RAI is N 0 ethylene, or acetylene, preferably N’ or O’, more preferably O’.When RAI is N’ or O’, the structure represented by formula (A) represents a monovalent anion moiety, and the hydrocarbon surfactant (A) further comprises a monovalent cation moiety corresponding to the monovalent anion moiety. In a preferred embodiment of the present disclosure, the of N’ or O’ is used for ionic bonding with the corresponding cation moiety. When RAI is N’, preferably nA2 is 1 . When RAI is O’, preferably nA2 is 0. When RAI is ethylene or acetylene, the hydrocarbon surfactant (A) consists only of the structure represented by formula (A).XAI and XA2 are each independently a single bond, -C(=O)-, or -S(=O)2- XAI is preferably a single bond or -C(=O)-, more preferably -C(=O)-.XA2 is preferably a single bond or -C (=0)-, more preferably a single bond. nAi is 0 or 1. nA2 is 0 or 1 , preferably 0, provided that both nAi and nA2 are not simultaneously zero.Preferably, nAi is 1 , and RAI is N’ or O’; or nAi is 0.HCAI and HCA2 are each independently a C1-30 hydrocarbon group, preferably alkyl, phenyl-substituted alkyl, or alkyl-substituted phenyl. Alkyl contained in the Ci- 30 hydrocarbon group is linear, branched or cyclic alkyl, preferably linear or branched alkyl, and more preferably linear alkyl.When this hydrocarbon group contains an alkyl moiety, one or more methylene groups present in this hydrocarbon group may be substituted or unsubstituted with -O-, and methylene in this hydrocarbon is preferably unsubstituted. One or more H atoms present in this hydrocarbon group may be substituted or unsubstituted with OH, and H in this hydrocarbon is preferably unsubstituted.However, (i) when HAI is 0, and both XAI and XA2 are single bonds, or (ii) when nAi is 1 , RAI is ethylene or acetylene, and both XAI and XA2 are single bonds, one or more methylene groups present in at least one of the hydrocarbon groups represented by HCAI and HCA2 are substituted with -O-, or one or more H atoms present in the hydrocarbon group are substituted with OH, or both.HCAI and HCA2 may be bonded to each other and may or may not form a ring structure, and preferably do not form a ring structure.

[0016] The hydrocarbon surfactant (A) is preferably (A-1 ) or (A-2).The hydrocarbon surfactant (A-1 ) comprises a monovalent anion moiety (Aa- 1 ) and a monovalent cation moiety, the monovalent anion moiety (Aa-1 ) is represented by formula (Aa-1 ):HCAI -XAI -O’ formula (Aa-1 ) whereinXAI is -C(=O)-, or -S(=O)2-, and the definitions and preferred examples of HCAI are each independently as described above.The hydrocarbon surfactant (A-2) is represented by formula (A-2):[C2]formula (A-2) whereinRAI is ethylene or acetylene, and the definitions and preferred examples of HAI , nA2, HCAI , and HCA2 are each independently as described above, provided that nA2 is 1 when HAI is 1 .

[0017] In a preferred embodiment of the present disclosure, in formula (A), RAI is N’ or 0 the hydrocarbon surfactant (A) further comprises a monovalent cation moiety corresponding to the monovalent anion moiety, and the monovalent cation moiety is at least one selected from the group consisting of H+, a cation represented by formula (Ac-2), Li+, Na+, and K+, preferably H+or a cation represented by formula (Ac-2), and more preferably H+.+NHPRa4-p formula (Ac-2) whereinGroups Raare each independently C1-7 alkyl, and one or more H atoms of the C1-7 alkyl may be substituted or unsubstituted with OH. Rais preferably unsubstituted. p is 0, 1 , 2, 3, or 4. p is preferably 0, 1 , or 4, more preferably 0 or 4, and still more preferably 4.The cation moiety (Ac) represented by formula (Ac-2) is a so-called ammonium ion.

[0018] In the hydrocarbon surfactant (A), the molar ratio of the monovalent anion moiety to the monovalent cation moiety is preferably 60:40 to 40:60, more preferably 55:45 to 45:55, still more preferably 51 :49 to 49:51 , and even more preferably 50:50.

[0019] In a more preferred embodiment, in formula (Aa-1 ), XAI is -S(=O)2-, and HCAI is alkyl-substituted phenyl, thereby the hydrocarbon surfactant (A) is a sulfonic acid (when the monovalent cation moiety is H+) or a salt thereof (for example, when the monovalent cation moiety is at least one selected from the group consisting of a cation represented by formula (Ac-2), Li+, Na+, and K+). Alkyl in the alkyl-substituted phenyl is preferably C1-20 alkyl, more preferably C3-20 alkyl, and still more preferably C10-20 alkyl. The number of alkyl substituents on the alkyl-substituted phenyl is 1 or 2, and preferably 1 . When the number of alkyl substitutions is 2, these alkyl substitutions may be the same or different. The total number of carbon atomsthereof is 20 or less. Alkyl in the alkyl-substituted phenyl is linear, branched or cyclic, preferably linear or branched, and more preferably linear.

[0020] Examples of such sulfonic acids or salts thereof include decylbenzenesulfonic acid, undecylbenzenesulfonic acid, dodecylbenzenesulfonic acid, tridecylbenzenesulfonic acid, tetradecylbenzenesulfonic acid, pentadecylbenzenesulfonic acid, hexadecylbenzenesulfonic acid, heptadecylbenzenesulfonic acid, octadecylbenzenesulfonic acid, nonadecylbenzenesulfonic acid, and mixtures thereof, and salts thereof.

[0021] In another more preferred embodiment, in formula (Aa-1 ), XAI is -S(=O)2-, and HCAI is alkyl, thereby the hydrocarbon surfactant (A) is a sulfonic acid (when the monovalent cation moiety is H+) or a salt thereof (for example, when the monovalent cation moiety is at least one selected from the group consisting of a cation represented by formula (Ac-2), Li+, Na+, and K+). The alkyl represented by HCAI is C3-20 alkyl, preferably C6-20 alkyl, more preferably C8-20 alkyl, and still more preferably Cs-18 alkyl. The alkyl represented by HCAI is linear, branched or cyclic, preferably linear or branched, and more preferably linear.

[0022] Examples of such sulfonic acids or salts thereof include 2-propanesulfonic acid, cyclohexanesulfonic acid, decanesulfonic acid, undecanesulfonic acid, dodecanesulfonic acid, tridecanesulfonic acid, tetradecanesulfonic acid, pentadecanesulfonic acid, hexadecanesulfonic acid, heptadecansulfonic acid, octadecanesulfonic acid, nonadecansulfonic acid, and mixtures thereof, and salts thereof.

[0023] In another more preferred embodiment, in formula (Aa-1 ), XAI is -C(=O)-, and HCAI is alkyl, thereby the hydrocarbon surfactant (A) is a carboxylic acid (when the monovalent cation moiety is H+) or a salt thereof (for example, when the monovalent cation moiety is at least one selected from the group consisting of a cation represented by formula (Ac-2), Li+, Na+, and K+). The alkyl represented byHCAI is C3-12 alkyl, preferably linear or branched C3-10 alkyl, more preferably linear or branched C3-9 alkyl, and still more preferably linear or branched C3-8 alkyl.

[0024] Examples of such carboxylic acids or salts thereof include 2-methylpropanoic acid, n-butanoic acid, 2-methylbutanoic acid, n-pentanoic acid, n-hexanoic acid, n- heptanoic acid, n-octanoic acid, 2-methylpentanoic acid, 2-methylhexanoic acid, 5- methylhexanoic acid, 2-methylheptanoic acid, 4-methyloctanoic acid, 2- ethylhexanoic acid, 2-propylpentanoic acid, 2,2-dimethylpentanoic acid, and 3,5,5- trimethylhexanoic acid, and mixtures thereof, and salts thereof.

[0025] In another more preferred embodiment, the hydrocarbon surfactant (A) is an EO / PO derivative of formula (A-2), wherein HAI and nA2 are 1 , RAI is ethylene or acetylene, and at least one of HCAI and HCA2 is a hydrocarbon group comprising at least one selected from the group consisting of an ethylene oxide (EO) unit and an propylene oxide (PO) unit. At least one of HCAI and HCA2 may comprise one or more hydroxy groups. The total number of one or more EO units and / or PO units per molecule of the hydrocarbon surfactant (A) is preferably 1 to 10, more preferably 2 to 8, and still more preferably 3 to 6.

[0026] Examples of such EO / PO derivative include a compound having the following structure: [C3]wherein Ra1is C1-6 alkyl, Ra2is C1-6 alkyl, EO is ethylene oxide, PO is propylene oxide, and for r11 , s11 , r21 and s21 , r11 + r21 = 0 to 10, s11 + s21 = 0 to 10, provided that r11 + r21 + s11 + s21 = 1 to 20. Examples of C1-6 alkyl include methyl,ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, isopentyl, and n-hexyl. Preferably, Ra1is methyl, Ra2is ethyl, r11 + r21 = 1 to 10, and s11 + s21 = O to 10.Examples of other EO / PO derivative include polyoxyethylene alkyl ether (higher alcohol EO adduct); polyoxyethylene alkyl phenyl ether (alkylphenol EO adduct); and polyoxyethylene polyoxypropylene glycol (polypropylene glycol EO adduct).

[0027] In another more preferred embodiment, the hydrocarbon surfactant (A) is a medium-chain monohydric alcohol of formula (A-2) wherein HAI is 0, nA2 is 1 , and one H atom present in at least one of the hydrocarbon groups represented by HCAI and HCA2 is substituted with OH, and the number of carbon atoms of the hydrocarbon surfactant (A) is 7 or more. The medium-chain monohydric alcohol may be a primary alcohol, a secondary alcohol, or a tertiary alcohol, and a primary alcohol, or a secondary alcohol. The number of carbon atoms of the hydrocarbon surfactant (A) in this embodiment is preferably 7 to 15, more preferably 7 to 12, and still more preferably 7 to 10. For example, for 2-heptanol, which is a secondary alcohol having 7 carbon atoms, in formula (A) and formula (A-2), HAI is 0, nA2 is 1 , XAI and XA2 are both single bonds (only in formula (A)), HCAI is 1 -hydroxyethyl (- CH(OH)-CH3), and HCA2is n-penthyl (-CH2CH2CH2CH2CH3). Here, HCAI is 1 - hydroxyethyl, wherein one H atom of ethyl corresponding to the alkyl moiety is substituted with OH.

[0028] Examples of such medium-chain monohydric alcohol include 1 -heptanol, 2- heptanol, 2-methyl-2-hexanol, cycloheptanol; 1 -octanol (capryl alcohol), 2-octanol, 2 -ethyl-1 -hexanol; 1 -nonanol, 2-nonanol, 4-nonanol, 5-nonanol, 3,5,5-trimethyl-1 - hexanol; 1 -decanol, 2-decanol, 4-decanol, 5-decanol, 2-propyl-1 -heptanol; 1 - undecanol, 2-undecanol; 1 -dodecanol (lauryl alcohol), 2-dodecanol, 2-butyl-1 - octanol; 1 -tridecanol, 2-tridecanol; 1 -tetradecanol (myristyl alcohol), 2-tetradecanol; 1 -pentadecanol, and 2-pentadecanol. As the medium-chain monohydric alcohol, 1 - heptanol, 2-heptanol, 2-octanol, and 2 -ethyl-1 -hexanol are preferred; and 2- heptanol, 2-octanol, and 2 -ethyl-1 -hexanol are more preferred.

[0029] The hydrocarbon surfactant (A) may be used alone, or may be a mixture of two or more thereof.The content of the hydrocarbon surfactant (A) is preferably 0.001 to 10 mass%, more preferably 0.005 to 5 mass%, still more preferably 0.008 to 2 mass%, and even more preferably 0.010 to 0.50 mass%, based on the electronic device manufacturing aqueous solution.

[0030] Solvent (S)The solvent (S) comprises water (S-1 ). Water (S-1 ) is preferably deionized water (DIW).In view of use in manufacturing process of an electronic device, and more preferably in manufacturing process of semiconductor, it is preferable that the solvent (S) contain a low level of impurities. The impurity concentration in the solvent (S) is preferably 1 ppm or less, more preferably 100 ppb or less, and still more preferably 10 ppb or less. In the present disclosure, the impurities of the solvent (S) mean components other than water (S-1 ) and other solvents (S) described later, for example, metallic ion such as sodium ion.

[0031] The content of water (S-1 ) based on the solvent (S) is preferably 90 to 100 mass%, more preferably 98 to 100 mass%, still more preferably 99 to 100 mass%, and even more preferably 99.9 to 100 mass%. In a preferred embodiment of the present disclosure, the solvent (S) consists essentially only of water (S-1 ). However, the embodiment in which an additive described later is contained in the electronic device manufacturing aqueous solution in a state of being dissolved and / or dispersed in a solvent other than water (S-1 ) (for example, a surfactant), is acceptable as a preferred embodiment of the present disclosure. In a further preferred embodiment of the present disclosure, the content of water (S-1 ) in the solvent (S) is 100 mass%.

[0032] Specific examples of the solvent (S) other than water (S-1 ) include cyclohexanone, cyclopentanone, propylene glycol monomethyl ether (PGME),propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol 1 -monomethyl ether 2-acetate (PGMEA), propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, y- butyrolactone, ethyl lactate, and mixed liquid thereof. These are preferred in terms of storage stability of the solution. These may be used alone, or two or more thereof may be mixed and used.

[0033] The content of the solvent (S) is preferably 80 to 99.999 mass%, more preferably 90 to 99.999 mass%, still more preferably 95 to 99.999 mass%, and even more preferably 98 to 99.999 mass%, based on the electronic device manufacturing aqueous solution.The content of water (S-1 ) in the solvent (S) is preferably 80 to 99.999 mass%, more preferably 90 to 99.999 mass%, still more preferably 95 to 99.999 mass%, and even more preferably 98 to 99.999 mass%, based on the electronic device manufacturing aqueous solution.

[0034] The pH of the electronic device manufacturing aqueous solution is 7.5 to 12.0, preferably 8.0 to 11 .5, more preferably 8.5 to 11 .3, and still more preferably 9.0 to 11 .3. In the present disclosure, the pH of the electronic device manufacturing aqueous solution is measured at 25°C, atmospheric conditions and 1 atm. Specifically, as described in the examples, the pH of the electronic device manufacturing aqueous solution is measured by preparing a calibration curve using three or more standard solutions for calibration under conditions of 25°C, atmospheric conditions and 1 atm, and using a pH meter. Preferably, the pH meter used is the device described in the examples.In one embodiment, the hydrocarbon surfactant (A) also functions as an alkaline component which adjusts the pH of the electronic device manufacturing aqueous solution to fall within a predetermined range. In this embodiment, the electronic device manufacturing aqueous solution may not contain the alkaline component (B) described later.

[0035] The electronic device manufacturing aqueous solution of the present disclosure requires the (A) component and the (S) component described above, and may comprise further compounds as necessary. Incidentally, the content of the components other than (A) and (S) (in the case of a plurality of components, the sum thereof) in the entire composition is preferably 0 to 10 mass%, more preferably 0 to 5 mass%, still more preferably 0 to 3 mass%, and even more preferably 0.0001 to 1 mass%, based on the electronic device manufacturing aqueous solution. An embodiment in which the electronic device manufacturing aqueous solution does not contain components other than (A) and (S) (the content of the other components is 0 mass%) is also a preferred embodiment of the present disclosure.

[0036] Alkaline component (B)The electronic device manufacturing aqueous solution of the present disclosure may comprise an alkaline component (B). The alkaline component (B) is preferably an organic salt compound. The alkaline component (B) is not particularly limited, and examples thereof include ammonia, a primary amine, a secondary amine, a tertiary amine, and an ammonium compound. These compounds may be unsubstituted or substituted with substituent(s). By inclusion of the alkaline component (B), pattern collapse can be further suppressed. Without being bound by any theory, it is believed that, by inclusion of the alkaline component (B), the pH of the aqueous solution can be adjusted within the scope of the present disclosure, and the impact of other components on the resist pattern can be reduced. The alkaline component (B) may be used alone, or may be a mixture of two or more thereof.

[0037] The alkaline component (B) preferably comprises at least one selected from the group consisting of alkaline components (B-1 ), (B-2), and (B-3). More preferably, the alkaline component (B) does not contain the alkaline component (B- 2). Still more preferably, the alkaline component (B) consists only of the alkaline component (B-1 ) or (B-3). In the present disclosure, the alkaline components (B-1 ), (B-2), and (B-3) refer not to the form in the electronic device manufacturing aqueous solution, but to the form during the preparation of the electronic devicemanufacturing aqueous solution. For example, in the case where the electronic device manufacturing aqueous solution is prepared using ammonia (NH3) corresponding to the alkaline component (B-1 ), at least a part of the ammonia is present in the aqueous solution in the form of ammonium hydroxide (NH4+OH_) corresponding to the alkaline component (B-2), depending on the pH of the aqueous solution. In the present disclosure, an alkaline component (B-2), which is derived from an alkaline component (B-1 ) used for the preparation and generated in the electronic device manufacturing aqueous solution, is regarded as an alkaline component (B-1 ).

[0038] The alkaline component (B-1 ) is represented by formula (B-1 ).NHqiRb13-qi formula (B-1 ) whereinGroups Rb1are each independently C1-7 alkyl, and one or more H atoms of the C1-7 alkyl may be substituted or unsubstituted with OH, and q1 is 0, 1 , 2, or 3.Examples of C1-7 alkyl include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, 1 ,1 -dimethylpropyl, 2,2-dimethylpropyl, 3- methylbutyl, n-hexyl, 4-methylpentyl, n-heptyl, cyclopentyl, cyclohexyl, and cycloheptyl, and methyl, ethyl, and n-propyl are preferable. C1-7 alkyl is preferably unsubstituted with OH. q1 is preferably 1 , 2, or 3, more preferably 2 or 3, and still more preferably 3.

[0039] Specific examples of the alkaline component (B-1 ) include ammonia; methylamine, ethylamine, isopropylamine, n-butylamine, tert-butylamine, amylamine, cyclohexylamine, monoethanolamine; dimethylamine, diethylamine, methylethylamine, dicyclohexylamine, diethanolamine; trimethylamine, triethylamine, tri(n-propyl)amine, dimethylethylamine, tricyclohexylamine, dimethylaminoethanol, and triethanolamine.

[0040] The alkaline component (B-2) is represented by formula (B-2).+NHq2Rb24-q2 OH’ formula (B-2)whereinGroups Rb2are each independently C1-7 alkyl, and one or more H atoms of the C1-7 alkyl may be substituted or unsubstituted with OH, q2 is 0, 1 , 2, 3, or 4.Examples of C1-7 alkyl include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, 1 ,1 -dimethylpropyl, 2,2-dimethylpropyl, 3- methylbutyl, n-hexyl, 4-methylpentyl, n-heptyl, cyclopentyl, cyclohexyl, and cycloheptyl, and methyl, ethyl, n-propyl, and n-butyl are preferable. C1-7 alkyl is preferably unsubstituted with OH. q2 is preferably 0, 1 , 2, or 3, more preferably 0, 1 , or 2, and still more preferably 0.

[0041] Specific examples of the alkaline component (B-2) include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra(n- propyl)ammonium hydroxide, tetraisopropylammonium hydroxide, tetrabutylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide, triethylmethylammonium hydroxide, and triethylhydroxyethylammonium.

[0042] The alkaline component (B-3) is represented by formula (B-3).[C4]formula (B-3) whereinRb3i Rb32 Rb33anc| Rb34are each independently H, or a C1-10 hydrocarbon group andLb3is a C1-10 hydrocarbon chain.Examples of C1-10 hydrocarbon group include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, 1 ,1 -dimethylpropyl, 2,2- dimethylpropyl, 3-methylbutyl, n-hexyl, 4-methylpentyl, n-heptyl, n-octyl, 2-ethylhexyl, n-nonyl, n-decyl, cyclopentyl, cyclohexyl, and cycloheptyl; and methyl, ethyl, and n-propyl are preferable; and methyl is more preferable. Examples of C1-10 hydrocarbon chain include methylene (-CH2-), ethylene (-CH2CH2-), 1 ,2-propylene (-CH(CH3)CH2-), 1 ,3-propylene (-CH2CH2CH2-), tetraethylene (-(CH2)4-), 1 ,4- cyclohexanediyl, and phenylene, and methylene, ethylene, and 1 ,3-propylene are preferable, and ethylene are more preferable.

[0043] Specific examples of the alkaline component (B-3) include ethylenediamine, tetraethylenediamine, N,N-dimethylmethylenediamine, N,N,N’,N’- tetramethylethylenediamine, N,N,N’,N’-tetraethylethylenediamine, N,N,N’,N’- tetramethyltetraethylenediamine, and N,N,N’,N’-tetramethylhexamethylenediamine.

[0044] Examples of the alkaline component (B) other than the alkaline components (B-1 ) to (B-3) include diethylenetriamine, pentaethylenehexamine, N,N,N’,N”,N”- pentamethyldiethylenetriamine, tris[2-(dimethylamino)ethyl]amine, tris[2-(2- methoxyethoxy)ethyl]amine, aniline, benzylamine, naphthylamine, N-methylaniline, 2-methylaniline, phenylalanine, pyrrole, oxazole, thiazole, imidazole, 4- methylimidazole, pyridine, methylpyridine, butylpyridine, piperidine, piperazine, and morpholine.

[0045] The alkaline component (B) is preferably at least one selected from the group consisting of ammonia, n-butylamine, amylamine, ethylenediamine, triethylamine, tripropylamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra(n-propyl)ammonium hydroxide, tetrabutylammonium hydroxide, and N,N,N’,N’- tetramethylethylenediamine, more preferably at least one selected from the group consisting of ammonia, amylamine, triethylamine, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, and N,N,N’,N’-tetramethylethylenediamine, and still more preferably at least one selected from the group consisting of tetramethylammonium hydroxide and tetrabutylammonium hydroxide.

[0046] The content of the alkaline component (B) is preferably 0.0001 to 10 mass%, more preferably 0.0005 to 1 .0 mass%, and still more preferably 0.001 to 0.1 mass%, based on the electronic device manufacturing aqueous solution.(The content of the alkaline component (B)) I (the content of the hydrocarbon surfactant (A)) is preferably 0 to 2.0, more preferably 0.05 to 1 .8, and still more preferably 0.2 to 1 .5.

[0047] Alcohol derivative (C)The electronic device manufacturing aqueous solution of the present disclosure may comprise an alcohol derivative (C). The alcohol derivative (C) is represented by formula (C). The alcohol derivative (C) is a compound different from the above components (A) and (B).[C5]formula (C) whereinRm , RC2, Res, and Rc4 are each independently hydrogen, fluorine, or C1-5 alkyl, preferably each independently hydrogen, fluorine, methyl, ethyl, t-butyl, or isopropyl, more preferably each independently hydrogen, methyl, or ethyl.Lei and Lc2 are each independently C1-20 alkyl or alkylene, C3-20 cycloalkyl or cycloalkylene, C2-4 alkene or alkenylene, C2-4 alkyne or alkynylene, or C6-20 aryl or arylene.Alkenylene means a divalent hydrocarbon group having one or more double bonds, and alkynylene means a divalent hydrocarbon group having one or more triple bonds.Optionally, part or all of H present in these groups may be substituted with fluorine, C1-5 alkyl, or hydroxy.Specifically, (i) when nC2 is 0, Lei is C1-20 alkyl, C3-20 cycloalkyl, C2-4 alkene, C2- 4 alkyne, or C6-20 aryl, and (ii) when nC2 is 1 , Lei is C1-20 alkylene, C3-20 cycloalkylene, C2-4 alkenylene, C2-4 alkynylene, or C6-20 arylene. Groups Lc2 are each independently C1-20 alkylene, C3-20 cycloalkylene, C2-4 alkenylene, C2-4 alkynylene, or C6-20 arylene.When nC2 is 0, and at least two of Rci , Rc2, and Lei are alkyl groups, these alkyl groups may form a ring. For example, when Rc2 is hydrogen, and Rci and Lei form a saturated 6-membered ring comprising carbon atoms to which Rci, Lei , and hydroxy group are attached, the alcohol derivative (C) is cyclohexanol.Ld and LC2 are each independently preferably C1-5 alkylene, C2-4 alkenylene, C2-4 alkynylene, or phenylene (Ce arylene), any of which may be substituted with fluorine; more preferably C2-4 alkylene, C2 alkenylene, C2 alkynylene, or phenylene, any of which may be substituted with fluorine; still more preferably C2 alkenylene, or C2 alkynylene; and most preferably C2 alkynylene (acetylene). nm is 0, 1 , or 2, preferably 0 or 1 , more preferably 0. nc2 is 0 or 1 , preferably 1 .

[0048] Specific examples of the alcohol derivative (C) having nC2 of 0 in formula (C) include ethanol; 1 -propanol, 2-propanol; 1 -butanol, 2-butanol, 2-methyl-1 -propanol, tert-butanol; 1 -pentanol, 2-pentanol, 3-pentanol, 2-methyl-1 -butanol, 3-methyl-1 - butanol, 2-methyl-2-butanol, 3-methyl-2-butanol, 2, 2-dimethyl-1 -propanol, cyclopentanol; 1 -hexanol, 2-hexanol, 3-hexanol, 2-methyl-1 -pentanol, 2-methyl-2- pentanol, 3-methyl-3-pentanol, 4-methyl-2-pentanol, 2-ethyl-1 -butanol, and cyclohexanol; and a partially fluorinated compound and a perfluorinated compound thereof.

[0049] Specific examples of the alcohol derivative (C) having nC2 of 1 in formula (C) include 3-hexyne-2,5-diol, 2,5-dimethyl-3-hexyne-2,5-diol, 3,6-dimethyl-4-octyne- 3,6-diol, 3,6-dimethyl-4-octene-3,6-diol, 3,6-dimethyl-3,6-octanediol, 2, 3,6,7- tetramethyl-4-octyne-3,6-diol, 1 ,4-butynediol, 2,4-hexadiyne-1 ,6-diol, 1 ,4- butanediol, 2,2,3,3-tetrafluoro-1 ,4-butanediol, 2,2,3,3,4,4,5,5-octafluoro-1 ,6-hexanediol, cis-1 ,4-dihydroxy-2-butene, 1 ,4-benzenedimethanol, 4, 7-di hydroxy- 2,4, 7, 9-tetramethyl-5-decyne, and combination thereof.

[0050] Unlike the hydrocarbon surfactant (A), the alcohol derivative (C) preferably exhibits substantially no or no surfactant action. The surface tension of an aqueous solution obtained by adding the alcohol derivative (C) at a concentration of 500ppm in water (S-1 ) is preferably 80 to 100%, more preferably 82 to 100%, and still more preferably 85 to 100% of the surface tension of a liquid which consists only of water (S-1 ). The surface tension is measured by a capillary rise type surface tensiometer.The content of the alcohol derivative (C) is preferably 0.001 to 10 mass%, more preferably 0.005 to 5 mass%, still more preferably 0.01 to 1 mass%, and even more preferably 0.01 to 0.1 mass%, based on the electronic device manufacturing aqueous solution. An embodiment in which no alcohol derivative (C) is contained is also a preferred embodiment of the present disclosure.

[0051] Resin (D)The electronic device manufacturing aqueous solution of the present disclosure may comprise a resin (D). The resin (D) means an organic polymer having a relatively large molecular weight, and in the present disclosure, refers to a compound having a molecular weight of 1000 or more. The resin (D) refers to a component other than the components (A) to (C). Examples of the resin (D) include novolak derivative, phenolic derivative, polystyrene derivative, polyacrylic acid derivative, polymethacrylic acid derivative, polyacrylamide derivative, polyethylene oxide derivative, polyvinylamide derivative, polyamine derivative, polymaleic acid derivative, polycarbonate derivative, polyvinylpyrrolidone derivative, polyvinyl alcohol derivative, and the copolymer of these combination, and the resin (D) is preferably at least one selected from the group consisting of polyacrylic acid derivative, polymethacrylic acid derivative, and polyvinyl alcohol derivative. The mass average molecular weight Mw of the resin (D) is preferably 1 ,500 to 300,000, more preferably 2,000 to 250,000, and still more preferably 2,500 to 200,000. In the present disclosure, the mass average molecular weight of the resin (D) is in terms of polymethyl methacrylate, which is measured by gel permeation chromatographyreference on polymethyl methacrylate. The resin (D) is used to adjust the viscosity of the electronic device manufacturing aqueous solution, or to cure a coating film of the electronic device manufacturing aqueous solution to form a cured film. The resin (D) also encompasses a photosensitive resin that is generally contained in a photosensitive resin composition.

[0052] The content of the resin (D) is preferably 0 to 10 mass% (more preferably 0 to 3 mass%; still more preferably 0 to 1 mass%; and even more preferably 0 to 0.1 mass%) based on the electronic device manufacturing aqueous solution. An embodiment in which the electronic device manufacturing aqueous solution is completely free of the resin (D) (the content of the resin (D) is 0.00 mass%) is a particularly preferred embodiment of the present disclosure.

[0053] Acid (E)The electronic device manufacturing aqueous solution of the present disclosure may comprise an acid (E). The acid (E) can be used to adjust the pH of the electronic device manufacturing aqueous solution, improve the solubility of additive components, and the like. The acid (E) refers to a component other than the components (A) to (D). Examples of the acid (E) include aromatic carboxylic acids.

[0054] The content of the acid (E) is preferably 0 to 10 mass% (more preferably 0.0001 to 0.1 mass%; and still more preferably 0.0002 to 0.001 mass%) based on the electronic device manufacturing aqueous solution. An embodiment in which no acid (E) is contained (the content thereof is 0.000 mass%) is also a preferred embodiment of the present disclosure.

[0055] Additive (F)The electronic device manufacturing aqueous solution of the present disclosure may comprise an additive (F). The additive (F) preferably comprises at least one selected from the group consisting of other nitrogen-containing compounds, other surfactants (surfactants different from the hydrocarbon surfactant(A)), other bases, sterilizers, antibacterial agents, preservatives, and antifungal agents.

[0056] The content of the additive (F) is preferably 0.0001 to 10 mass%, more preferably 0.0001 to 0.1 mass%, and still more preferably 0.0002 to 0.001 mass%, based on the electronic device manufacturing aqueous solution. An embodiment in which no additive (F) is contained (0.0000 mass%) is also a preferred embodiment of the present disclosure.

[0057] The electronic device manufacturing aqueous solution of the present disclosure can be filtered by a filter after dissolving the components to remove impurities and / or insoluble substances.The surface tension of the electronic device manufacturing aqueous solution is preferably 25 to 70 mN / m, more preferably 25 to 60 mN / m, and still more preferably 28 to 60 mN / m. The surface tension is measured by a capillary rise type surface tensiometer. Preferably, the capillary rise type surface tensiometer used is the device described in the example.

[0058] <Method for Producing a Resist Pattern>The present disclosure also provides a method for producing a resist pattern using the above-described electronic device manufacturing aqueous solution. The photosensitive resin composition (resist composition) used in the method may be either positive type or negative type, and is preferably positive type. An embodiment of the method for producing a resist pattern to which the electronic device manufacturing aqueous solution of the present disclosure is applied, comprises the following steps.(1 ) applying a photosensitive resin composition to a substrate, with or without one or more intermediate layers interposed between the photosensitive resin composition and the substrate, to form a photosensitive resin layer,(2) exposing the photosensitive resin layer to radiation,(3) developing the exposed photosensitive resin layer, and(4) cleaning the developed layer with the above-described electronic device manufacturing aqueous solution.For the sake of clarity, the numbers in parentheses denote the order. For example, the step (3) is performed before the step (4). After (3), step (3.1 ) is performed, and then step (4) is performed.

[0059] Details is described below. First, a photosensitive resin composition is applied (for example, layered) above a substrate, such as a silicon substrate or a glass substrate, which has been pretreated as necessary, to form a photosensitive resin layer. A known method can be used for layering, and a coating method such as spin coating is suitable. The photosensitive resin composition can be directly layered on the substrate, or can be layered with one or more intermediate layers (for example, BARC) interposed between the photosensitive resin composition and the substrate. An antireflection film (for example, TARC) may also be layered above the photosensitive resin layer (on the side opposite to the substrate). A layer other than the photosensitive resin layer is described later. The formation of the antireflection film above or below the photosensitive resin layer enables to improve the cross-sectional shape and the exposure margin.

[0060] Typical examples of the positive or negative photosensitive resin composition used in the method for producing a resist pattern of the present disclosure include a positive photosensitive resin composition comprising a quinonediazide-based photosensitive agent and an alkali-soluble resin, and a chemically amplified photosensitive resin composition. From the viewpoint of forming a high-resolution fine resist pattern, a chemically amplified photosensitive resin composition is preferable, and examples thereof include a chemically amplified PHS-acrylate hybrid EUV resist composition. These are more preferably positive photosensitive resin compositions.

[0061] Examples of the quinonediazide-based photosensitive agent used in the positive photosensitive resin composition comprising a quinonediazide-based photosensitive agent and an alkali-soluble resin include 1 ,2-benzoquinonediazide-4-sulfonic acid, 1 ,2-naphthoquinonediazide-4-sulfonic acid, 1 ,2- naphthoquinonediazide-5-sulfonic acid, and esters and amides of these sulfonic acids. Examples of the alkali-soluble resin include a polyvinylphenol, a polyvinyl alcohol, and a copolymer of an acrylic acid or an methacrylic acid.

[0062] Examples of the chemically amplified photosensitive resin composition include a positive chemically amplified photosensitive resin composition in which a compound (a photoacid generator) that generates an acid upon irradiated with radiation and a resin whose polarity is increased by the action of the acid generated from the photoacid generator and solubility in a developer changes between an exposed portion and an unexposed portion are contained, and a negative chemically amplified photosensitive resin composition that contains an alkali-soluble resin, a photoacid generator, and a crosslinking agent, in which crosslinking of the resin occurs by the crosslinking agent due to the action of the acid, and solubility in a developer changes between an exposed portion and unexposed portion.

[0063] Examples of the resin in which the polarity is increased by the action of the acid and the solubility in a developer is changed between an exposed portion and an unexposed portion include a resin in which a group that is decopmosed by the action of the acid to generate an alkali-soluble group is contained in the main chain or the side chain of the resin, or in both the main chain and the side chain of the resin. Typical examples thereof include a polymer in which an acetal group or a ketal group as a protecting group is introduced into a hydroxystyrene-based polymer (PHS) (for example, Japanese Patent Application Publication No. H02- 19847), and a similar polymer in which a t-butoxycarbonyloxy group or a p- tetrahydropyranyloxy group is introduced as a group for acidolysis (for example, Japanese Patent Application Publication No. H02-209977).

[0064] The photoacid generator is not particularly limited as long as it is a compound that generates an acid upon irradiated with radiation, and examples thereof include onium salts such as diazonium salts, ammonium salts, phosphonium salts, iodonium salts, sulfonium salts, selenonium salts, and arsonium salts,organohalogen compounds, organometallic / organohalides, photoacid generators having an o-nitrobenzyl-type protecting group, compounds that photodegrade to generate sulfonic acids such as iminosulfonate, disulfone compounds, diazoketosulfone compounds, and diazodisulfone compounds. A polymer photoacid generator, in which at least one selected from the group consisting of the photoacid generating group of these compounds and these compounds are introduced into the main chain or the side chain of the polymer, can also be used.

[0065] The chemically amplified photosensitive resin composition may further comprise an acid-decomposable dissolution-inhibitive compound, a dye, a plasticizer, a surfactant, a photosensitizer, an organic basic compound, a compound that promotes solubility in a developer, etc., as necessary.

[0066] The photosensitive resin composition is applied onto a substrate by, for example, an appropriate coating apparatus such as a spinner or a coater, and a coating method, and heated to remove the solvent in the photosensitive resin composition, to form a photosensitive resin layer. The heating temperature is preferably 70 to 150°C, and more preferably 90 to 150°C. The heating time is preferably 10 to 600 seconds, more preferably 10 to 180 seconds, and still more preferably 30 to 120 seconds.

[0067] In the method for producing a resist pattern of the present disclosure, the presence of a film or a layer other than the photosensitive resin layer is also allowed. The substrate and the photosensitive resin layer may be not in direct contact with each other, and an intermediate layer may be interposed between the substrate and the photosensitive resin layer. The intermediate layer refers to a layer formed between the substrate and the photosensitive resin layer, and is also referred to as a bottom layer. Examples of the bottom layer include a substrate modification film, a planarization film, a bottom anti-reflective coating (BARC), an inorganic hard mask intermediate layer (a silicon oxide film, a silicon nitride film, or a silicon oxynitride film), and an adhesion film. The planarization film is, for example, an SOC. Regarding the formation of the inorganic hard mask intermediatelayer, for example, Japanese Patent No. 5336306 can be referred to. The intermediate layer may be one layer or a plurality of layers. A top layer may be formed on the photosensitive resin layer. The top layer is, for example, a top anti- reflective coating (TARC).

[0068] In the method for producing a resist pattern of the present disclosure, a known laminated configuration can be adopted in accordance with process conditions, and examples thereof include the following laminated configuration: substrate / photosensitive resin layer substrate / bottom film / photosensitive resin layer substrate / planarization film / photosensitive resin layer substrate / planarization film / photosensitive resin layer / top layer substrate / planarization film / BARC / photosensitive resin layer substrate / planarization film / inorganic hardmask intermediate layer / photosensitive resin layer substrate / planarization film / adhesion film / photosensitive resin layer substrate / substrate modification film / planarization film / photosensitive resin layer and substrate / substrate modification film / planarization film / adhesion film / photosensitive resin layerThese layers can be cured by being heated and / or exposed to light after application, or can be deposited by using a known method such as a CVD method. These layers can be removed by a known method such as etching, and can be patterned by using each upper layer as a mask.

[0069] In a preferred embodiment of the present disclosure, the photosensitive resin composition is directly applied on the substrate without interposing any intermediate layer. In another embodiment of the present disclosure, no TARC is formed on the photosensitive resin layer. In another embodiment of the present disclosure, a thickened resist pattern is formed by forming a thickened layer on a photosensitive resin layer as described in International Publication No. 2022 / 129015.

[0070] The photosensitive resin layer is exposed to light through a predetermined mask. When other layers are also contained (a top layer, etc.), they may be exposed to light together. The wavelength of the radiation (light) used for exposure is not particularly limited. Exposure with light having a wavelength 13.5 to 248 nm is preferable. Specifically, a KrF excimer laser (248 nm in wavelength), ArF excimer laser (193 nm in wavelength), extreme ultraviolet radiation (EUV, 13.5 nm in wavelength), or the like can be used, and EUV is more preferable. These wavelengths have an allowable range of ±5%, and preferably have an allowable range of ±1 %. After the exposure, post-exposure bake (PEB) can also be performed as necessary. The temperature of the PEB is preferably 70 to 150°C, and more preferably 80 to 120°C. The heating time of the PEB is preferably 0.3 to 5 minutes, and more preferably 0.5 to 2 minutes.

[0071] Next, development is performed with a developer. In the development in the method for producing a resist pattern of the present disclosure, a 2.38 mass% (±1 % is allowed) tetramethylammonium hydroxide (TMAH) aqueous solution is preferably used. A surfactant or the like can also be added to the developer. The temperature of the developer is preferably 5 to 50°C, and more preferably 25 to 40°C. The development time is preferably 10 to 300 seconds, and more preferably 20 to 60 seconds. As the development method, a known method such as paddle developing can be used. As described above, the resist pattern in the present disclosure includes not only a resist pattern that is formed by exposing and developing a resist film but also a resist pattern that is coated with another layer or film and has an increased wall thickness .

[0072] The resist pattern (the developed photosensitive resin layer) fabricated through the above-described steps is in an uncleaned state. The resist pattern can be cleaned with the electronic device manufacturing aqueous solution of the present disclosure. The time for allowing the electronic device manufacturing aqueous solution to contact with the resist pattern, that is, the processing time is preferably 1 second or more. The treatment temperature can also be freely chosen. The method for putting the electronic device manufacturing aqueous solution on theresist may also be freely chosen, and for example, the resist can be contacted with the electronic device manufacturing aqueous solution by immersing a resist substrate into the electronic device manufacturing aqueous solution or by dripping the electronic device manufacturing aqueous solution onto the surface of a rotating resist substrate. These methods may be combined as appropriate.After the developed layer is cleaned, the electronic device manufacturing aqueous solution can be removed. The removal can be carried out, for example, by spin-drying.The method for producing a resist pattern according to an embodiment preferably further comprises the following step.(5) removing the electronic device manufacturing aqueous solution from the cleaned layer (resist pattern).

[0073] In the method for producing a resist pattern of the present disclosure, before and / or after the cleaning process using the electronic device manufacturing aqueous solution, the resist pattern after development can be cleaned with another cleaning liquid. The other cleaning liquid is preferably water, and more preferably pure water (DIW, deionized water, etc.). The cleaning before the cleaning process is useful for removing the developer attached to the resist pattern. The cleaning after the cleaning process is useful for removing the electronic device manufacturing aqueous solution. A method of cleaning a resist pattern, in which pure water is poured into a developed resist pattern to clean the pattern while replacing a developer with pure water, and then the electronic device manufacturing aqueous solution is poured into the resist pattern, while the pattern is immersed in pure water, to clean the pattern while replacing pure water with the electronic device manufacturing aqueous solution is a preferred embodiment of the method for producing a resist pattern of the present disclosure. Cleaning by the other cleaning liquid and the electronic device manufacturing aqueous solution may be performed by a known method. For example, the cleaning can be performed by immersing a resist substrate into the other cleaning liquid or the electronic device manufacturing aqueous solution; or by dripping the other cleaning liquid or theelectronic device manufacturing aqueous solution onto the surface of a rotating resist substrate. These methods may be combined as necessary.

[0074] The method for producing a resist pattern according to an embodiment preferably further comprises the following step.(3.1 ) applying a cleaning liquid to the resist pattern to clean the developed layer.As described above, step (3.1 ) is performed after (3) developing the exposed photosensitive resin layer, and before (4) cleaning the developed layer with the electronic device manufacturing aqueous solution. The method for producing a resist pattern preferably does not contain cleaning step other than the cleaning step (3.1 ) using the cleaning liquid and the cleaning step (4) using the electronic device manufacturing aqueous solution. It is a preferred embodiment that the cleaning liquid of (3.1 ) has a higher surface tension than the electronic device manufacturing aqueous solution of the present disclosure.

[0075] Pattern collapse is likely to occur at a place where a spacing between the walls of a resist pattern is the narrowest. In particular, pattern collapse occurs remarkably at a place where the walls of the resist pattern are parallel to each other. In the present disclosure, a distance of said spacing at which the spacing is the smallest on single circuit unit is defined as a minimum space size. Single circuit unit preferably forms single semiconductor device in a subsequent process. Also preferable is an embodiment in which single semiconductor device includes single circuit unit in the horizontal direction and a plurality of circuit units in the vertical direction. Unlike the test sample, when there are fewer places with narrow spacing between the walls of the resist pattern, defects occur less frequently, and therefore the frequency of occurrence of defective products are decreases. The minimum space size of the resist pattern in single circuit unit is preferably 5 to 30 nm, more preferably 10 to 20 nm, and still more preferably 10 to 17 nm.

[0076] <Method for Manufacturing Device>The method for manufacturing a device of the present disclosure comprises a method for producing a resist pattern in which the electronic device manufacturing aqueous solution is used.

[0077] The method for manufacturing a device preferably comprises etching a substrate by using the resist pattern produced by the above-described method as a mask to process the substrate. After the processing, the resist film is peeled off as necessary. Preferably, the device is a semiconductor device. The resist pattern is used as a mask for etching and thereby enabling to process the intermediate layer and / or the substrate. A known method such as dry etching or wet etching can be used for the etching, and dry etching is more suitable. For example, the resist pattern can be used as an etching mask to etch the intermediate layer, and the resultant intermediate layer pattern can be used as an etching mask to etch a substrate, thereby processing the substrate. The substrate can be also directly etched while etching layers (e.g., an intermediate layer) below the resist layer by using the resist pattern as an etching mask. The processed substrate becomes, for example, a patterned substrate. The formed pattern can be used to form wiring on the substrate. The layers on the substrate can be removed by dry etching with O2, CF4, CHF3, CI2, or BCI3. O2, or CF4 can be preferably used as the dry etching gas.

[0078] In the method for manufacturing a device, ion doping can be performed on the substrate or the bottom layer using the resist pattern produced by the abovedescribed method as a mask. Ion doping is performed on the substrate or the bottom layer using the formed resist pattern as a mask, or the lower layer of the resist pattern is processed using the formed resist pattern as a mask to form a lower layer pattern, and ion doping is performed on the substrate using the lower layer pattern as a mask. Ion doping can be performed by a known method using a known ion-doping device. Generally, in the manufacturing of semiconductor devices, display devices, and the like, an impurity diffusion layer is formed on the surface of a substrate. The impurity diffusion layer is usually formed in two steps of impurity introduction and diffusion. As a method of introducing impurities, there is known an ion doping method in which impurities such as phosphorus and boron areionized in vacuum and accelerated at a high electric field to be implanted into the surface of a substrate or a layer. The ion acceleration energy during ion doping is generally 10 to 200 keV. Examples of ion sources (impurity elements) include ions such as boron, phosphorus, arsenic, and argon. Examples of a thin film on the substrate include a thin film of silicon, silicon dioxide, silicon nitride, aluminum, and the like.

[0079] Preferably, the method for manufacturing a device comprises forming wiring on the processed substrate.

[0080] <Stress Applied to Resist Wall>As described in Namatsu et al., Appl. Phys. Lett. 1995 (66) p. 2655-2657, and schematically illustrated in FIG. 1 of International Publication No. 2023 / 170021 , the stress applied to the resist wall during drying of rinse due to capillary action of the rinse composition can be expressed by the following formula.Omax=(6ycose / D) x (H / W)2Omax: Maximum stress applied to resist wall y: Surface tension of rinse composition9: Contact angleD: Spacing between wallsH: Wall heightW: Wall widthThese parameters can be measured by a known method, for example SEM photographs.

[0081] As can be seen from the above equation, a smaller D or a smaller W produces a larger stress. In the present disclosure, “pitch size” refers to single unit in the resist pattern unit arrangement having W and D, as described in FIG. 1 of International Publication No. 2023 / 170021 . This means that the finer the required resist pattern (the narrower the pitch size), the higher the stress applied to the resist pattern. In this manner, the finer the pattern becomes, the severer the conditionsbecome, and the more improvement is required for the electronic device manufacturing aqueous solution (for example, a rinse composition). [Examples]

[0082] The present invention is described by way of examples. Note that the embodiments of the present invention are not limited to these examples.

[0083] Preparation Example of Electronic Device Manufacturing Aqueous Solution>The components are shown in Table 1 .

[0084] [Table 1-1]Table 1[Table 1-2](Table 1 continued)

[0085] Compound A10 is synthesized by the methods described in International Publication No. 2016 / 040551.

[0086] The components listed in the respective tables are added to DIW in respective amounts. They are stirred at room temperature for 5 minutes. The components are visually confirmed to be dissolved. The resulting solution is filtered (pore size = 10 nm) to obtain the electronic device manufacturing aqueous solution in each example.

[0087] pH MeasurementThe high-precision pH sensor 2530-C (TAIYO) is attached to a pH-meter AS800 (AS ONE). A calibration curve is prepared using three or more standard solutions for calibration under conditions of 25°C, atmospheric conditions and 1 atm, and the pH of each electronic device manufacturing aqueous solution is measured.

[0088] Surface Tension MeasurementThe surface tension of each electronic device manufacturing aqueous solution is measured with a capillary rise type surface tensiometer DG-1 (Surfgauge INSTRUMENTS).

[0089] Experiment 1 Performance Evaluation for Defects (1 )A silicon substrate is treated with hexamethyldisilazane (HMDS) at 90°C for 30 seconds. A chemically amplified PHS-acrylate hybrid resist is spin-coated thereon and soft-baked at 110°C for 60 seconds to form a resist film with a thickness 35 nm. Thereafter, paddle development is performed with a 2.38 mass% TMAH aqueous solution for 30 seconds. The rinse water starts to flow in a state where the developer is paddled on the wafer, and the developer is replaced with the rinse water while being rotated, and the rotation of wafer is stopped in a state of being paddled with the rinse water. Thereafter, while dripping the electronic device manufacturing aqueous solution onto the wafer in a state where the rinse water ispaddled on the wafer, cleaning is performed at a low-speed rotation for 30 seconds to replace the rinse water with the electronic device manufacturing aqueous solution. Thereafter, high-speed rotation processing is performed to dry the wafer.

[0090] In Comparative Example 11 , after the developer is replaced with rinse water, high-speed rotation processing is performed to dry the wafer.

[0091] The obtained resist film is observed by the defect-inspecting device LS9110 (Hitachi High-Tech), and the number of foreign matter attached to the resist surface is counted.

[0092] Experiment 2 Performance Evaluation for Defects (2)The silicon substrate is treated with HMDS at 90°C for 30 seconds. A chemically amplified PHS-acrylate hybrid resist is spin-coated thereon and soft- baked at 110°C for 60 seconds to form a resist film with a thickness 35 nm. The obtained substrate is exposed using an EUV exposure system (ASML NXE:3400) through a mask with size of 18 nm (line:space = 1 :1 ). Post exposure bake (PEB) at 110°C for 60 seconds is performed, and then paddle development is performed with a 2.38 mass% TMAH aqueous solution for 30 seconds. The rinse water starts to flow in a state where the developer is paddled on the wafer, the developer is replaced with the rinse water while being rotated, and the rotation of wafer is stopped in a state of being paddled with the rinse water. Thereafter, while dripping the electronic device manufacturing aqueous solution onto the wafer in a state where the rinse water is paddled on the wafer, cleaning is performed at a low-speed rotation for 30 seconds to replace the rinse water with the electronic device manufacturing aqueous solution. Thereafter, high-speed rotation processing is performed to dry the wafer.

[0093] In Comparative Example 11 , after the developer is replaced with rinse water, high-speed rotation processing is performed to dry the wafer.

[0094] The number of foreign matter on the pattern obtained is counted by using the defect-inspecting device UVision4 (Applied Materials), and this is defined as the number of defects. The shape of foreign matter is evaluated with a defect observation equipment eDR7280 (KLA-Tencor).

[0095] The evaluation is made based on the number of defects relative to that of Comparative Example 11 , which is used as the reference (100%), according to the following criteria:A: The number of defects is less than 30%B: The number of defects is 30% or more and less than 100%C: The number of defects is 100% or more and 300% or lessD: All patterns are dissolved, or the number of defects is more than 300%.

[0096] Experiment 3 Evaluation for Pattern CollapseA resist pattern cleaned by the same procedure as in Experiment 2 is obtained. UVision4 and eDR7280 are used to ascertain the number of pattern collapse.

[0097] Experiment 4 Evaluation for Limit Pattern SizeA silicon substrate is treated with HMDS at 90°C for 30 seconds. A chemically amplified PHS-acrylate hybrid resist is spin-coated thereon and soft-baked at 110°C for 60 seconds to form a resist film with a thickness 50 nm. The obtained substrate is exposed using NXE:3400 through a mask with a size of 16 nm (line:space = 1 :1 ). PEB at 110°C for 60 seconds is performed, and then paddle development is performed with a 2.38 mass% TMAH aqueous solution for 30 seconds. The rinse water starts to flow in a state where the developer is paddled on the wafer, and the developer is replaced with the rinse water while being rotated, and the rotation of wafer is stopped in a state of being paddled with the rinse water. Thereafter, while dripping the electronic device manufacturing aqueous solution onto the wafer in a state where the rinse water is paddled on the wafer, cleaning is performed at a low- speed rotation for 30 seconds to replace the rinse water with the electronic devicemanufacturing aqueous solution. Thereafter, high-speed rotation processing is performed to dry the wafer.

[0098] In Comparative Example 11 , after the developer is replaced with rinse water, high-speed rotation processing is performed to dry the wafer.

[0099] The line width and the presence of pattern collapse are examined with the CD-SEM CG6300 (Hitachi High-Tech). As the exposure increases, the line width decreases. The size of minimum line width at which no pattern collapse is confirmed is defined as a “limit pattern size”. For example, in Comparative Example 11 , a pattern collapse is confirmed at a line width of 16.4 nm and a pattern collapse is not confirmed at a line width of 16.8 nm, and thus the limit pattern size is determined to be 16.8 nm. In Comparative Example 12, since the pattern is dissolved, evaluation is impossible.

[0100] Experiment 5 Pattern Size Change at Fixed Exposure DoseA silicon substrate is treated with HMDS at 90°C for 30 seconds. A chemically amplified PHS-acrylate hybrid resist is spin-coated thereon and soft-baked at 110°C for 60 seconds to form a resist film with a thickness 35 nm. The obtained substrate is exposed using NXE:3400 through a mask with size of 18 nm (line:space = 1 :1 ). PEB at 110°C for 60 seconds is performed, and then paddle development is performed with a 2.38 mass% TMAH aqueous solution for 30 seconds. The rinse water starts to flow in a state where the developer is paddled on the wafer, and the developer is replaced with the rinse water while being rotated. Thereafter, highspeed rotation processing is performed to dry the wafer. EUV radiation dose at which the resist pattern is formed with a 20.0 nm width (line:space = 1 :1 ), is defined as reference radiation dose. This corresponds to Comparative Example 11 (DIW).

[0101] In Example 16 and Comparative Example 15, the same operations as described above are performed except for the following. The exposure is carried out at the reference radiation dose. After replacing the developer with rinse water, the rotation of wafer is stopped in a state of being paddled with rinse water. Whiledripping the electronic device manufacturing aqueous solution onto the wafer, cleaning is performed at a low-speed rotation for 30 seconds, and the rinse water is replaced with the electronic device manufacturing aqueous solution. Thereafter, high-speed rotation processing is performed to dry the wafer. The resulting pattern size (line width) is determined. More specifically, in Example 16 and Comparative Example 15, a step of performing cleaning with the electronic device manufacturing aqueous solution is added after the water rinsing.

[0102] In acidic condition (Comparative Example 15), the pattern size changes. Basic condition (Example 16) is advantageous from the viewpoint of controlling the pattern width since the pattern size does not change.

[0103] Tables 2 to 4 show the compositions and evaluation results of the electronic device manufacturing aqueous solution. The evaluation results shown in Tables 2 and 3 are also listed again in Table 4.

[0104] [Table 2]Table 2Table 3Table 4

Claims

[CLAIMS]

1. An electronic device manufacturing aqueous solution, comprising a hydrocarbon surfactant (A) and a solvent (S), wherein the hydrocarbon surfactant (A) does not contain fluorine, the solvent (S) comprises water (S-1 ), and the pH of the electronic device manufacturing aqueous solution is 7.5 to 12.0.

2. The electronic device manufacturing aqueous solution according to claim 1 , wherein pKa (H2O) of the hydrocarbon surfactant (A) is -5.0 to 20.0.

3. The electronic device manufacturing aqueous solution according to claim 1 or2, further comprising an alkaline component (B), wherein optionally, the content of the alkaline component (B) is 0.0001 to 10 mass% based on the electronic device manufacturing aqueous solution; or optionally, (the content of the alkaline component (B)) I (the content of the hydrocarbon surfactant (A)) is 0 to 2.0.

4. The electronic device manufacturing aqueous solution according to any one of claims 1 to 3, wherein the hydrocarbon surfactant (A) comprises a structure represented by formula (A):[C1]formula (A) whereinRAI is N O’, ethylene, or acetylene;when RAI is N’ or 0 formula (A) represents a monovalent anion moiety, and the hydrocarbon surfactant (A) further comprises a monovalent cation moiety corresponding to the monovalent anion moiety;XAI and XA2 are each independently a single bond, -C(=O)-, or -S(=O)2-; nAi is 0 or 1 ; nA2 is 0 or 1 , provided that both nAi and nA2 are not simultaneously zero;HCAI and HCA2 are each independently a C1-30 hydrocarbon group, when the hydrocarbon group contains an alkyl moiety, one or more methylene groups present in the hydrocarbon group may be substituted or unsubstituted with - O-, and one or more H atoms present in the hydrocarbon group may be substituted or unsubstituted with OH, provided that(i) when nAi is 0, and both XAI and XA2 are single bonds; or(ii) when nAi is 1 , RAI is ethylene or acetylene, and both XAI and XA2 are single bonds; one or more methylene groups present in at least one of the hydrocarbon groups represented by HCAI and HCA2 are substituted with -O-; one or more H atoms present in the hydrocarbon group is substituted with OH; or both; andHCAI and HCA2 may be bonded to each other and may or may not form a ring structure.

5. The electronic device manufacturing aqueous solution according to claim 4, whereinRAI is N’ or O’, the hydrocarbon surfactant (A) further comprises a monovalent cation moiety corresponding to the monovalent anion moiety, the monovalent cation moiety is at least one selected from the group consisting of H+, a cation represented by formula (Ac-2), Li+, Na+, and K+:+NHPRa4-p formula (Ac-2) whereinGroups Raare each independently C1-7 alkyl, and one or more H atoms of the C1-7 alkyl may be substituted or unsubstituted with OH, and p is 0, 1 , 2, 3, or 4.

6. The electronic device manufacturing aqueous solution according to any one of claims 1 to 5, wherein Mw of the hydrocarbon surfactant (A) is 100 to 800.

7. The electronic device manufacturing aqueous solution according to any one of claims 3 to 6, wherein the alkaline component (B) comprises at least one selected from the group consisting of alkaline components (B-1 ), (B-2), and (B-3), wherein the alkaline components (B-1 ), (B-2), and (B-3) are represented by formula (B- 1 ), (B-2), and (B-3), respectively:NHqiRb13-qi formula (B-1 ) whereinGroups Rb1are each independently C1-7 alkyl, and one or more H atoms of the C1-7 alkyl may be substituted or unsubstituted with OH, and q1 is 0, 1 , 2, or 3;+NHq2Rb24-q2 OH’ formula (B-2) whereinGroups Rb2are each independently C1-7 alkyl, and one or more H atoms of the C1-7 alkyl may be substituted or unsubstituted with OH, and q2 is 0, 1 , 2, 3, or 4;[C2]formula (B-3) whereinRb3i Rb32 Rb33anc| Rb34are eac| independently H or a C1-10 hydrocarbon group; andLb3is a C1-10 hydrocarbon chain.

8. The electronic device manufacturing aqueous solution according to any one of claims 1 to 7, wherein the surface tension is 25 to 70 mN / m, wherein the surface tension is measured by a capillary rise type surface tensiometer.

9. The electronic device manufacturing aqueous solution according to any one of claims 1 to 8, wherein the hydrocarbon surfactant (A) is (A-1 ) or (A-2), the hydrocarbon surfactant (A-1 ) comprises a monovalent anion moiety (Aa-1 ) and a monovalent cation moiety, wherein the monovalent anion moiety (Aa-1 ) is represented by formula (Aa-1 ):HCAI -XAI -O’ formula (Aa-1 ) whereinXAI is -C(=0)-, or -S(=O)2-HCAI is as defined in claim 4; and the hydrocarbon surfactant (A-2) is represented by formula (A-2): [C3]HCA1- RAiy HCA2]n#;formula (A-2) whereinRAI is ethylene or acetylene, and nAi, nA2, HCAI , and HCA2 are as defined in claim 4, respectively, provided that nA2 is 1 when nAi is 1 .

10. The electronic device manufacturing aqueous solution according to any one of claims 1 to 9, wherein the content of the hydrocarbon surfactant (A) is 0.001 to 10 mass% based on the electronic device manufacturing aqueous solution, optionally, the content of the solvent (S) is 80 to 99.999 mass% based on the electronic device manufacturing aqueous solution; and optionally, the content of water (S-1 ) in the solvent (S) is 80 to 99.999 mass% based on the electronic device manufacturing aqueous solution.

11. The electronic device manufacturing aqueous solution according to any one of claims 1 to 10, further comprising an alcohol derivative (C), wherein the alcohol derivative (C) is represented by formula (C):[C4]formula (C) whereinRm , RC2, Res, and Rc4 are each independently hydrogen, fluorine, or C1-5 alkyl,Lei and Lc2 are each independently C1-20 alkyl or alkylene, C3-20 cycloalkyl or cycloalkylene, C2-4 alkene or alkenylene, C2-4 alkyne or alkynylene, or C6-20 aryl or arylene, wherein part or all of H atoms present in these groups may be substituted with fluorine, C1-5 alkyl, or hydroxy, when nC2 is 0, and at least two of Rci, Rc2, and Lei are alkyl groups, these alkyl groups may form a ring, nm is 0, 1 , or 2, and nc2 is 0 or 1 ; and optionally, the content of the alcohol derivative (C) is 0.001 to 10 mass% based on the electronic device manufacturing aqueous solution.

12. The electronic device manufacturing aqueous solution according to any one of claims 1 to 11 , wherein the surface tension of an aqueous solution obtained by adding the hydrocarbon surfactant (A) at a concentration of 500ppm in water (S-1 ) is 30 to 70% of the surface tension of a liquid which consists only of water (S-1 ), whereinthe surface tension is measured by a capillary rise type surface tensiometer; and optionally, the surface tension of an aqueous solution obtained by adding the alcohol derivative (C) at a concentration of 500ppm in water (S-1 ) is 80 to 100% of the surface tension of a liquid which consists only of water (S-1 ).

13. The electronic device manufacturing aqueous solution according to any one of claims 1 to 12, further comprising a resin (D), wherein optionally, the content of the resin (D) is 0 to 10 mass% based on the electronic device manufacturing aqueous solution; optionally, the electronic device manufacturing aqueous solution further comprises an acid (E); and optionally, the content of the acid (E) is 0 to 10 mass% based on the electronic device manufacturing aqueous solution.

14. The electronic device manufacturing aqueous solution according to any one of claims 1 to 13, further comprising an additive (F), wherein optionally, the additive (F) comprises at least one selected from the group consisting of other nitrogen-containing compounds, other surfactants, other bases, sterilizers, antibacterial agents, preservatives, and antifungal agents; and optionally, the content of the additive (F) is 0.0001 to 10 mass% based on the electronic device manufacturing aqueous solution.

15. The electronic device manufacturing aqueous solution according to any one of claims 1 to 14 which is a semiconductor manufacturing aqueous solution, wherein optionally, the electronic device manufacturing aqueous solution is a semiconductor substrate fabricating aqueous solution; optionally, the electronic device manufacturing aqueous solution is a semiconductor substrate fabrication process cleaning liquid; optionally, the electronic device manufacturing aqueous solution is a lithography cleaning liquid; oroptionally, the electronic device manufacturing aqueous solution is a resist pattern cleaning liquid.

16. A method for producing a resist pattern using the electronic device manufacturing aqueous solution according to any one of claims 1 to 15.

17. The method for producing a resist pattern according to claim 16, comprising the following steps:(1 ) applying a photosensitive resin composition to a substrate, with or without one or more intermediate layers interposed between the photosensitive resin composition and the substrate, to form a photosensitive resin layer,(2) exposing the photosensitive resin layer to radiation,(3) developing the exposed photosensitive resin layer, and(4) cleaning the developed layer with the electronic device manufacturing aqueous solution according to any one of claims 1 to 15.

18. The method for producing a resist pattern according to claim 17, further comprising the following step:(3.1 ) applying a cleaning liquid to the resist pattern to clean the developed layer.

19. The method for producing a resist pattern according to claim 17 or 18, wherein the photosensitive resin composition is a chemically amplified photosensitive resin composition, and optionally the exposing is performed using extreme ultraviolet radiation.

20. The method for producing a resist pattern according to any one of claims 16 to 19, wherein a resist pattern having a minimum space size of 5 to 30 nm is produced.

21. A method for manufacturing a device, comprising the method for producing a resist pattern according to any one of claims 16 to 20, whereinoptionally, the method for manufacturing a device comprises etching a substrate by using the produced resist pattern as a mask to process the substrate; optionally, the method for manufacturing a device comprises ion doping a substrate or a bottom layer film by using the produced resist pattern as a mask; and optionally, the method for manufacturing a device comprises forming wiring on the processed substrate.

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