Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device

Abstract

To provide an electronic device manufacturing aqueous solution that can reduce defects. An electronic device manufacturing aqueous solution comprising an ionic surfactant (A) and a solvent (S) is provided, wherein the solvent (S) comprises water (S-1), and a pH of the electronic device manufacturing aqueous solution is 7.5 to 12.0.

Description

[DESCRIPTION][Title of Invention] ELECTRONIC DEVICE MANUFACTURING AQUEOUS SOLUTION, METHOD FOR PRODUCING RESIST PATTERN, AND METHOD FOR MANUFACTURING DEVICE[Technical Field]

[0001] The present disclosure relates to an electronic device manufacturing aqueous solution, a method for producing a resist pattern, and a method for manufacturing a device.[Background Art]

[0002] In recent years, there is an increasing need for highly integrated LSIs, and pattern miniaturization is demanded. In order to meet these needs, lithography processes using short wavelength KrF excimer laser (248 nm), ArF excimer laser (193 nm), extreme ultraviolet radiation (EUV; 13 nm), X-rays, electron beams, or the like are being put into practical use. In order to deal with the miniaturization of resist patterns, a photosensitive resin composition used as a resist in microfabrication is also required to have properties for high resolution. Short-wavelength light exposure can form finer patterns, however, creating extremely fine structures raises yield concerns, such as the collapse of these fine patterns..

[0003] PTL 1 describes a specific rinse composition containing a nonionic fluorinated surfactant and a basic additive containing tetraalkylammonium hydroxide.PTL 2 describes a replacement solution between resist patterns containing a sulfonyl group-containing compound, a nitrogen-containing compound, and a solvent.PTL 3 describes an electronic device manufacturing solution containing at least an anionic surfactant, a solvent, and a quaternary ammonium compound.PTL 4 describes a cleaning treatment solution containing a basic compound, which is an inorganic alkaline compound, and two specific surfactants.[Citation List][Patent Literature]

[0004] [PTL 1] JP 2023-504507 A[PTL 2] JP 2023-502837 A[PTL 3] WO 2023 / 170021[PTL 4] J P 2007-254510 A[Summary of Invention][Technical Problem]

[0005] The inventors believed that there were still one or more problems which needed to be improved. Examples of such problems include: reducing defects in a fine resist pattern; suppressing the occurrence of bridging in a resist pattern; enabling to form a finer resist pattern; preventing resist pattern collapse in a fine resist pattern; reducing the variation in film thickness of a resist pattern; reducing the number of rinse steps after an electronic device manufacturing aqueous solution is used; reducing residues after removal of an electronic device manufacturing aqueous solution; problems arising from mixing with other manufacturing materials; reducing surface tension of an electronic device manufacturing aqueous solution; providing an electronic device manufacturing aqueous solution exhibiting low risk of handling; providing an electronic device manufacturing aqueous solution with excellent storage stability (for example, longterm storage); and providing an electronic device manufacturing aqueous solution exerting less influence on resist patterns; and providing an electronic device manufacturing aqueous solution that has minimal environmental impact.The present invention has been made based on the technical background as described above, and provides an electronic device manufacturing aqueous solution.[Solution to Problem]

[0006] An electronic device manufacturing aqueous solution according to one embodiment comprises an ionic surfactant (A) and a solvent (S),wherein the solvent (S) comprises water (S-1 ), and a pH of the electronic device manufacturing aqueous solution is 7.5 to 12.0.A method for producing a resist pattern according to one embodiment comprises using the aforementioned electronic device manufacturing aqueous solution.A method for manufacturing a device according to one embodiment comprises the aforementioned method for producing a resist pattern.[Advantageous Effects of Invention]

[0007] By using the electronic device manufacturing aqueous solution of the present disclosure, the following one or more effects can be desired. Defects in a fine resist pattern can be reduced. The occurrence of bridging in a resist pattern can be suppressed. A finer resist pattern can be formed. Resist pattern collapse in a fine resist pattern can be prevented. The variation in film thickness of the resist pattern can be reduced. The number of rinse steps after the electronic device manufacturing aqueous solution is used can be reduced. The residues after removing the electronic device manufacturing aqueous solution can be reduced. Problems arising from mixing with other manufacturing materials can be avoided. Surface tension of an electronic device manufacturing aqueous solution can be reduced. An electronic device manufacturing aqueous solution with less risk of handling can be provided. An electronic device manufacturing aqueous solution with excellent storage stability (for example, long-term storage) can be provided. An electronic device manufacturing aqueous solution with little effect on resist patterns can be provided. An electronic device manufacturing aqueous solution with minimal environmental impact can be provided.The above description is not to be construed as disclosing all embodiments of the present invention and all advantages related to the present invention.[Description of Embodiments]

[0008] Embodiments of the present invention will be described below, but the present invention is not limited to these embodiments, and various applications can be made within the spirit and scope of the present invention.

[0009] DefinitionsIn the present disclosure, unless otherwise specifically stated, terms and symbols follow the definitions or examples described in this paragraph.The singular form includes the plural form, and the terms “a” and “the” mean “at least one.” An element of a certain concept can be expressed as a plurality of types, and when an amount thereof (for example, mass% or mol%) is described, the amount means a sum of the amounts of the plurality of types.The term “and / or” includes all combinations of elements, and also includes the use of a single element.When a numerical range is expressed using “to” or the range includes values at both ends, and the units are the same. For example, 5 to 25 mol% is 5 mol% or more and 25 mol% or less.Notations such as “Cx-y”, “Cx to Cy” and “Cx” refer to the number of carbon atoms in a molecule or substituent. For example, C1-6 alkyl is an alkyl chain having 1 or more and 6 or less carbon atoms (methyl, ethyl, propyl, butyl, pentyl, hexyl, etc.).When a polymer has a plurality of structural units, monomers that form these structural units are copolymerized in the polymer. The copolymerization may be any of alternating copolymerization, random copolymerization, block copolymerization, graft copolymerization, and a mixture thereof. When polymers and resins are represented by structural formulae, the symbols n, m and the like in parentheses indicate the number of structural units.Degrees Celsius is used as the temperature unit. For example, 20 degrees is 20 degrees Celsius.The additive is a compound itself that exhibits the function. For example, a base generator is a compound that generates a base. There may also be an embodiment in which the compound is dissolved or dispersed in a solvent and isadded to a composition. In one embodiment, such a solvent is preferably contained in the composition of the present disclosure as a solvent (S) or another component.

[0010] Electronic Device Manufacturing Aqueous Solution>An electronic device manufacturing aqueous solution according to one embodiment comprises an ionic surfactant (A) and a solvent (S).In the present disclosure, the electronic device manufacturing aqueous solution is used during a process of manufacturing an electronic device. The electronic device manufacturing aqueous solution may be used in a process of manufacturing the electronic device and may be removed or eliminated in the course of the process. Examples of the electronic device include display devices, LEDs, and semiconductor devices.The electronic device manufacturing aqueous solution may be a semiconductor manufacturing aqueous solution, is preferably a semiconductor substrate fabricating aqueous solution; more preferably a semiconductor substrate fabrication process cleaning liquid; still more preferably a lithography cleaning liquid; and even more preferably a resist pattern cleaning liquid. The electronic device manufacturing aqueous solution, which is a semiconductor substrate fabricating aqueous solution, can also be referred to as a semiconductor substrate fabricating aqueous solution, which consists of only the electronic device manufacturing aqueous solution of the present disclosure.In another embodiment, the electronic device manufacturing aqueous solution may be a rinse composition used for rinsing an exposed and developed resist pattern.

[0011] Ionic Surfactant (A)The ionic surfactant (A) is not particularly limited as long as it has an effect of reducing surface tension. The surface tension of an aqueous solution obtained by adding the ionic surfactant (A) to water (S-1 ) at a concentration of 500 ppm is preferably 80% or less, more preferably 70% or less, and still more preferably 65% or less, of the surface tension of a liquid containing only water (S-1 ). The surface tension is measured by a capillary rise type surface tension meter.

[0012] The ionic surfactant (A) is preferably substantially free of ethylene oxide repeating units and propylene oxide repeating units. In the present disclosure, “substantially free of ethylene oxide repeating units and propylene oxide repeating units” means that the sum of the atomic weights of ethylene oxide repeating units and propylene oxide repeating units in the molecular weight or the mass average molecular weight of the ionic surfactant (A) is preferably 0 to 10%, more preferably 0 to 5%, and still more preferably 0%. The total number of carbon atoms of one or more ethylene oxide repeating units and / or propylene oxide repeating units in one molecule of the ionic surfactant (A) is preferably 0 to 8, more preferably 0 to 6, and still more preferably 0 to 4. Preferably, the ionic surfactant (A) does not comprise ethylene oxide repeating units and propylene oxide repeating units (the aforementioned total number of carbon atoms is 0).The ionic surfactant (A) preferably has no alkyne structure.The number of carbon atoms in one molecule of the ionic surfactant (A) is preferably 8 to 30, more preferably 8 to 25, and still more preferably 8 to 20.

[0013] The Mw of the ionic surfactant (A) is preferably 100 to 800, more preferably 115 to 770, and still more preferably 115 to 740. Mw is the molecular weight when the ionic surfactant is a single molecule. In the present disclosure, the mass average molecular weight of the ionic surfactant (A) is in terms of polystyrene, and is a value measured by gel permeation chromatography using polystyrene as a standard.The molar volume of the ionic surfactant (A) is preferably 100 to 1 ,000 m3 / mol, more preferably 150 to 800 m3 / mol, and still more preferably 160 to 600 m3 / mol.

[0014] The pKa (H2O) of the ionic surfactant (A) is preferably -11 .0 to 7.0, more preferably -10.5 to 6.5, and still more preferably -10.0 to 6.0. The ionic surfactant (A) having a pKa (H2O) within the above range is ionized in an electronic device manufacturing aqueous solution in the pH range of 7.5 to 12.0. In the present disclosure, the pKa (H2O) of the ionic surfactant (A) is determined based on the pH value measured using a pH meter after a calibration curve is created using three ormore calibration curve creating standard solutions under conditions of 25°C, atmospheric conditions and 1 atm. It is desirable to use the device described in the Examples as the pH meter.The present invention encompasses an aspect in which the ionic surfactant (A) is ionized and separated in an electronic device manufacturing aqueous solution due to the presence of water (S-1 ) (more preferably in an equilibrium state). In the following description, a specific aspect of the ionic surfactant (A) is based on the state before it is added to the solvent (S). The specific aspect includes the content. In the present disclosure, the same applies to other components unless otherwise specified.

[0015] In one preferred embodiment of the present disclosure, the ionic surfactant (A) comprises a monovalent anionic moiety (Aa) and a monovalent cationic moiety (Ac), and the anionic moiety (Aa) is represented by Formula (Aa).[C1]Formula (Aa)Where,RAI’ is N’ or O’, and preferably O’. In one preferred embodiment of the present disclosure, of RAI is used for ionic bonding with the cationic moiety (Ac). When RAI ’ is N’, nA2 is preferably 1 . When RAI ’ is O’, nA2 is preferably 0.XAI is -C(= 0)- or -S(=O)2-, and preferably -S(=O)2-XA2 is a single bond, -C(=O)- or -S(=O)2-, preferably a single bond or -S(=O)2- and more preferably -S(=O)2- nA2 is 0 or 1 , and preferably 0.HCAI and HCA2 are each independently a C1-30 hydrocarbon group, preferably alkyl, phenyl-substituted alkyl, or alkyl-substituted phenyl, more preferably alkyl or alkyl-substituted phenyl, and still more preferably alkyl. The alkyl in the C1-30hydrocarbon group is linear, branched or cyclic alkyl, preferably linear or branched alkyl, and more preferably linear alkyl.When this hydrocarbon group has an alkyl moiety, one or more methylenes in this hydrocarbon group may or may not be substituted with -O-, and are preferably not substituted. Part or all of H atoms in this alkyl may or may not be substituted with F, and are preferably not substituted. One or more H atoms in this alkyl may or may not be substituted with OH, and are preferably not substituted.HCAI and HCA2 may or may not be bonded to form a ring structure, and preferably do not form a ring structure.

[0016] The anionic moiety (Aa) is preferably (Aa-1 ) or (Aa-2). Anionic moieties (Aa-1 ) and (Aa-2) are represented by Formulae (Aa-1 ) and (Aa-2), respectively;HCAI-XAI-O’ Formula (Aa-1 )Where, definitions and preferred examples of HCAI and XAI are each independently the same as described above.[C2]N-XA2 HCA2Formula (Aa-2)Where, definitions and preferred examples of HCAI , HCA2, XAI , and XA2 are each independently the same as described above.

[0017] In one preferred embodiment of the present disclosure, the ionic surfactant (A) comprises a monovalent anionic moiety (Aa) and a monovalent cationic moiety (Ac), wherein the cationic moiety (Ac) is at least one selected from the group consisting of H+, a cation represented by Formula (Ac-2), Li+, Na+and K+, and preferably H+or the cation represented by Formula (Ac-2).+NHPRa4-p Formula (Ac-2)Where,Ras are each independently C1-7 alkyl, one or more H atoms in the C1-7 alkyl may or may not be substituted with OH. Rais preferably not substituted. p is 0, 1 , 2, 3, or 4. p is preferably 0, 1 or 4, more preferably 0 or 4, and still more preferably 4.The cationic moiety (Ac) represented by Formula (Ac-2) is a so-called ammonium ion.

[0018] In the ionic surfactant (A), the molar ratio of the anionic moiety (Aa) and the cationic moiety (Ac) is preferably 60:40 to 40:60, more preferably 55:45 to 45:55, still more preferably 51 :49 to 49:51 , even more preferably 50:50.

[0019] In a more preferred embodiment, the ionic surfactant (A) is a sulfonic acid (when the cationic moiety (Ac) is H+) in which, in Formula (Aa-1 ), XAI is -S(=O)2- and HCAI is alkyl-substituted phenyl, or a salt thereof (for example, when the cationic moiety (Ac) is at least one selected from the group consisting of the cation represented by Formula (Ac-2), Li+, Na+and K+). The alkyl in the alkyl-substituted phenyl is C1-20 alkyl, preferably C3-20 alkyl, and more preferably C10-20 alkyl. The number of alkyl substitutions in the alkyl-substituted phenyl is 1 or 2, and preferably 1 . When the number of alkyl substitutions is 2, these alkyls may be the same as or different from each other, and a total number of carbon atoms is 20 or less. The alkyl in the alkyl-substituted phenyl is linear, branched or cyclic, preferably linear or branched, and more preferably linear. Part or all of H atoms in the alkyl of the alkyl- substituted phenyl may be substituted with F.

[0020] Examples of such sulfonic acids or salts thereof include decylbenzenesulfonic acid, undecylbenzenesulfonic acid, dodecylbenzenesulfonic acid, tridecylbenzenesulfonic acid, tetradecylbenzenesulfonic acid, pentadecylbenzenesulfonic acid, hexadecylbenzenesulfonic acid, heptadecylbenzenesulfonic acid, octadecylbenzenesulfonic acid, nonadecylbenzenesulfonic acid, compounds in which these alkyls are fully fluorinated or partially fluorinated, mixtures thereof, and salts thereof.

[0021] In another more preferred embodiment, the ionic surfactant (A) is a sulfonic acid (when the cationic moiety (Ac) is H+) in which, in Formula (Aa-1 ), XAI is - S(=O)2-, and HCAI is alkyl, or a salt thereof (for example, when the cationic moiety (Ac) is at least one selected from the group consisting of the cation represented by Formula (Ac-2), Li+, Na+and K+). The alkyl represented by HCAI is C3-20 alkyl, preferably C6-20 alkyl, more preferably C8-20 alkyl, and still more preferably Cs-18 alkyl. The alkyl represented by HCAI is linear, branched or cyclic, preferably linear or branched, and more preferably linear. Part or all of H atoms in the alkyl represented by HCAI may be substituted with F.

[0022] Examples of such sulfonic acids or salts thereof include 2-propanesulfonic acid, cyclohexanesulfonic acid, octanesulfonic acid, decanesulfonic acid, undecanesulfonic acid, dodecanesulfonic acid, tridecanesulfonic acid, tetradecanesulfonic acid, pentadecanesulfonic acid, hexadecanesulfonic acid, heptadecanesulfonic acid, octadecanesulfonic acid, nonadecanesulfonic acid, compounds in which these alkyls are fully fluorinated or partially fluorinated (for example, perfluorooctanesulfonic acid), mixtures thereof, and salts thereof.

[0023] In another more preferred embodiment, the ionic surfactant (A) is a carboxylic acid (when the cationic moiety (Ac) is H+) in which, in Formula (Aa-1 ), XAI is - C(=O)-, and HCAI is alkyl, or a salt thereof (for example, when the cationic moiety (Ac) is at least one selected from the group consisting of the cation represented by Formula (Ac-2), Li+, Na+and K+). The alkyl represented by HCAI is C3-12 alkyl, preferably linear or branched C3-10 alkyl, more preferably linear or branched C3-9 alkyl, and still more preferably linear or branched C3-8 alkyl.

[0024] Examples of such carboxylic acids or salts thereof include 2-methylpropanoic acid, n-butanoic acid, 2-methylbutanoic acid, n-pentanoic acid, n-hexanoic acid, n- heptanoic acid, n-octanoic acid, 2-methylpentanoic acid, 2-methylhexanoic acid, 5- methylhexanoic acid, 2-methylheptanoic acid, 4-methyloctanoic acid, 2-ethylhexanoic acid, 2-propylpentanoic acid, 2,2-dimethylpentanoic acid, and 3,5,5- trimethylhexanoic acid, mixtures thereof, and salts thereof.

[0025] In another more preferred embodiment, the ionic surfactant (A) is a bis(fluorinated alkyl sulfonyl)imide or fluorinated alkylcarbonyl fluorinated alkyl sulfonylimide (when the cationic moiety (Ac) is H+) in which, in Formula (Aa-2), XAI is -S(= 0)2-, XA2 is -S(= 0)2- or -C(=O)-, and HCAI and HCA2 are each independently fluorinated alkyl, or a salt thereof (for example, when the cationic moiety (Ac) is at least one selected from the group consisting of the cation represented by Formula (Ac-2), Li+, Na+and K+). The alkyls of HCAI and HCA2 are each independently C1-20 fluorinated alkyl, preferably C2-16 fluorinated alkyl, and more preferably C3-10 fluorinated alkyl. The fluorinated alkyl is linear, branched or cyclic, preferably linear or branched, and more preferably linear. All H atoms in the fluorinated alkyl are preferably substituted with F. HCAI and HCA2 may be bonded to form a ring structure.

[0026] Examples of anionic moieties (Aa) of such bis(fluorinated alkyl sulfonyl)imides and fluorinated alkylcarbonyl fluorinated alkyl sulfonylimides include those represented by the following formula.[C3]

[0027] The ionic surfactants (A) may be used alone or a mixture of two or more thereof may be used. The content of the ionic surfactant (A) based on the electronic device manufacturing aqueous solution is preferably 0.001 to 10 mass%, more preferably 0.005 to 5 mass%, still more preferably 0.008 to 2 mass%, and even more preferably 0.020 to 0.20 mass%.

[0028] Solvent (S)The solvent (S) comprises water (S-1 ). The water (S-1 ) is preferably deionized water (DIW).Considering use of the solvent (S) in an electronic device manufacturing step, and more preferably, in a semiconductor manufacturing step, it is preferable that the solvent (S) contain few impurities. The impurity concentration of the solvent (S) is preferably 1 ppm or less, more preferably 100 ppb or less, and still morepreferably 10 ppb or less. In the present disclosure, impurities in the solvent (S) refer to components other than water (S-1 ) and other solvents (S) to be described below, for example, metal ions such as sodium ions.

[0029] The content of water (S-1 ) based on the solvent (S) is preferably 90 to 100 mass%, more preferably 98 to 100 mass%, still more preferably 99 to 100 mass%, and even more preferably 99.9 to 100 mass%. In a preferred embodiment of the present disclosure, the solvent (S) is substantially composed of only water (S-1 ). However, an embodiment in which additives to be described below that are dissolved and / or dispersed in a solvent other than water (S-1 ) (for example, a surfactant) are contained in an electronic device manufacturing aqueous solution is acceptable as a preferred embodiment of the present disclosure. In a more preferred embodiment of the present disclosure, the content of the water (S-1 ) contained in the solvent (S) is 100 mass%.

[0030] Specific examples of the solvent (S) other than water (S-1 ) include cyclohexanone, cyclopentanone, propylene glycol monomethyl ether (PGME), propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol 1 -monomethyl ether 2-acetate (PGMEA), propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, y- butyrolactone, ethyl lactate, and mixed solutions thereof. These are preferable in terms of storage stability of the solution. These may be used alone or a mixture of two or more thereof may be used.

[0031] The content of the solvent (S) based on the electronic device manufacturing aqueous solution is preferably 80 to 99.999 mass%, more preferably 90 to 99.999 mass%, still more preferably 95 to 99.999 mass%, and even more preferably 98 to 99.999 mass%.The content of the water (S-1 ) contained in the solvent (S) based on the electronic device manufacturing aqueous solution is preferably 80 to 99.999mass%, more preferably 90 to 99.999 mass%, still more preferably 95 to 99.999 mass%, and even more preferably 98 to 99.999 mass%.

[0032] The pH of the electronic device manufacturing aqueous solution is 7.5 to 12.0, preferably 8.0 to 11 .5, more preferably 8.5 to 11 .3, and still more preferably 9.0 to 11 .3. In the present disclosure, the pH of the electronic device manufacturing aqueous solution is measured at 25°C, atmospheric conditions and 1 atm. Specifically, as described in the Examples, the pH of the electronic device manufacturing aqueous solution is measured using a pH meter after a calibration curve is created using three or more calibration curve creating standard solutions under conditions of 25°C, atmospheric conditions and 1 atm. It is desirable to use the device described in the Examples as the pH meter.In one embodiment, the ionic surfactant (A) also functions as an alkaline component that adjusts the pH of the electronic device manufacturing aqueous solution to be within a predetermined range. In this embodiment, the electronic device manufacturing aqueous solution may not comprise an alkaline component (B) to be described below.

[0033] The electronic device manufacturing aqueous solution of the present disclosure essentially comprises the components (A) and (S), and may comprise additional compounds, as necessary. The content (a total content if there are a plurality of components) of components other than (A) and (S) in the entire composition based on the electronic device manufacturing aqueous solution is preferably 0 to 10 mass%, more preferably 0 to 5 mass%, still more preferably 0 to 3 mass%, and even more preferably 0.0001 to 1 mass%. An embodiment in which the electronic device manufacturing aqueous solution does not comprise any components other than (A) and (S) (the content of other components is 0 mass%) is also a preferred embodiment of the present disclosure.

[0034] Alkaline Component (B)The electronic device manufacturing aqueous solution of the present disclosure may comprise an alkaline component (B). The alkaline component (B) ispreferably an organic salt compound. The alkaline component (B) is not particularly limited, and examples thereof include ammonia, primary amines, secondary amines, tertiary amines, and ammonium compounds. These compounds may be unsubstituted or substituted with one or more substituents. When the alkaline component (B) is contained, it is possible to further suppress pattern collapse. Without being bound by any theory, it is thought that, when the alkaline component (B) is contained, it is possible to adjust the pH of the aqueous solution to be within the range of the present disclosure and reduce the influence of other components on the resist pattern. The alkaline components (B) may be used alone or a mixture of two or more thereof may be used.

[0035] The alkaline component (B) preferably comprises at least one selected from the group consisting of alkaline components (B-1 ), (B-2) and (B-3). More preferably, the alkaline component (B) does not comprise the alkaline component (B-2). Still more preferably, the alkaline component (B) is composed of only the alkaline component (B-1 ) or (B-3). In the present disclosure, the alkaline components (B-1 ), (B-2) and (B-3) are the forms in the preparation of the electronic device manufacturing aqueous solution, not the forms present in the electronic device manufacturing aqueous solution. For example, when an electronic device manufacturing aqueous solution is prepared using ammonia (NH3) corresponding to the alkaline component (B-1 ), at least a part of ammonia exists in the aqueous solution in the form of ammonium hydroxide (NH4+OH_) corresponding to the alkaline component (B-2) depending on the pH of the aqueous solution. In the present disclosure, the alkaline component (B-2) produced in the electronic device manufacturing aqueous solution, which is derived from the alkaline component (B- 1 ) during preparation, is regarded as the alkaline component (B-1 ).

[0036] The alkaline component (B-1 ) is represented by Formula (B-1 ). NHqiRb13-qi Formula (B-1 ) In the formula, Rb1s are each independently C1-7 alkyl, one or more H atoms in the C1-7 alkyl may or may not be substituted with OH, and q1 is 0, 1 , 2, or 3. Examples of C1-7 alkyl include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl,tert-butyl, n-pentyl, 1 ,1 -dimethylpropyl, 2,2-dimethylpropyl, 3-methylbutyl, n-hexyl, 4-methylpentyl, n-heptyl, cyclopentyl, cyclohexyl, and cycloheptyl, and methyl, ethyl, and n-propyl are preferable. Preferably, the C1-7 alkyl is not substituted with OH. q1 is preferably 1 , 2, or 3, more preferably 2 or 3, and still more preferably 3.

[0037] Specific examples of the alkaline component (B-1 ) include ammonia; methylamine, ethylamine, isopropylamine, n-butylamine, tert-butylamine, amylamine, cyclohexylamine, monoethanolamine; dimethylamine, diethylamine, methylethylamine, dicyclohexylamine, diethanolamine; trimethylamine, triethylamine, tri(n-propyl)amine, dimethylethylamine, tricyclohexylamine, dimethylaminoethanol, and triethanolamine.

[0038] The alkaline component (B-2) is represented by Formula (B-2).+NHq2Rb24-q2 OH’ Formula (B-2)In the formula, Rb2s are each independently C1-7 alkyl, one or more H atoms in the C1-7 alkyl may or may not be substituted with OH, and q2 is 0, 1 , 2, 3, or 4.Examples of C1-7 alkyl include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, 1 ,1 -dimethylpropyl, 2,2-dimethylpropyl, 3-methylbutyl, n-hexyl, 4-methylpentyl, n-heptyl, cyclopentyl, cyclohexyl, and cycloheptyl, and methyl, ethyl, n-propyl, and n-butyl are preferable. Preferably, the C1-7 alkyl is not substituted with OH. q2 is preferably 0, 1 , 2, or 3, more preferably 0, 1 , or 2, and still more preferably 0.

[0039] Specific examples of the alkaline component (B-2) include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra(n- propyl)ammonium hydroxide, tetraisopropylammonium hydroxide, tetrabutylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide, triethylmethylammonium hydroxide, and triethylhydroxyethylammonium.

[0040] The alkaline component (B-3) is represented by Formula (B-3).[C4]Formula (B-3)In the formula, Rb31, Rb32, Rb33and Rb34are each independently H or a C1-10 hydrocarbon group, and Lb3is a C1-10 hydrocarbon chain. Examples of the C1-10 hydrocarbon group include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, secbutyl, tert-butyl, n-pentyl, 1 ,1 -dimethylpropyl, 2,2-dimethylpropyl, 3-methylbutyl, n- hexyl, 4-methylpentyl, n-heptyl, n-octyl, 2-ethylhexyl, n-nonyl, n-decyl, cyclopentyl, cyclohexyl, and cycloheptyl; methyl, ethyl, and n-propyl are preferable; and methyl is more preferable. Examples of the C1-10 hydrocarbon chain include methylene(- CH2-), ethylene (-CH2CH2-), 1 ,2-propylene (-CH(CH3)CH2-), 1 ,3-propylene (- CH2CH2CH2-), tetraethylene (-(CH2)4-), 1 ,4-cyclohexanediyl, and phenylene; methylene, ethylene, and 1 ,3-propylene are preferable; and ethylene is more preferable.

[0041] Specific examples of the alkaline component (B-3) include ethylene diamine, tetraethylene diamine, N,N-dimethylmethylenediamine, N,N,N’,N’- tetramethylethylene diamine, N,N,N’,N’-tetraethylethylene diamine, N,N,N’,N’- tetramethyltetraethylene diamine, and N,N,N’,N’-tetramethylhexamethylenediamine.

[0042] Examples of the alkaline component (B) other than the alkaline components (B-1 ) to (B-3) include diethylene triamine, pentaethylene hexamine, N,N,N’,N”,N”- pentamethyldiethylene triamine, tris[2-(dimethylamino)ethyl]amine, tris[2-(2- methoxyethoxy)ethyl]amine, aniline, benzylamine, naphthylamine, N-methylaniline, 2-methylaniline, phenylalanine, pyrrole, oxazole, thiazole, imidazole, 4- methylimidazole, pyridine, methylpyridine, butylpyridine, piperidine, piperazine, and morpholine.

[0043] The alkaline component (B) is preferably at least one selected from the group consisting of ammonia, n-butylamine, amylamine, ethylene diamine, triethylamine,tripropylamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra(n-propyl)ammonium hydroxide, tetrabutylammonium hydroxide, and N,N,N’,N’- tetramethylethylene diamine, more preferably at least one selected from the group consisting of ammonia, amylamine, triethylamine, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, and N,N,N’,N’-tetramethylethylene diamine, and still more preferably at least one selected from the group consisting of tetramethylammonium hydroxide, and tetrabutylammonium hydroxide.

[0044] The content of the alkaline component (B) based on the electronic device manufacturing aqueous solution is preferably 0.0001 to 10 mass%, more preferably 0.0005 to 1.0 mass%, and still more preferably 0.001 to 0.1 mass%.(The content of the alkaline component (B)) I (the content of the ionic surfactant (A)) is preferably 0 to 2.0, more preferably 0.05 to 1 .8, and still more preferably 0.2 to 1 .5.

[0045] Alcohol Derivative (C)The electronic device manufacturing aqueous solution of the present disclosure may comprise an alcohol derivative (C). The alcohol derivative (C) is represented by Formula (C). The alcohol derivative (C) is a compound different from the components (A) and (B).[C5]Formula (C)Where,Rm, RC2, Res, and Rc4 are each independently hydrogen, fluorine, or C1-5 alkyl; preferably, each independently hydrogen, fluorine, methyl, ethyl, t-butyl, or isopropyl; and more preferably, each independently hydrogen, methyl or ethyl.Lei and Lc2 are each independently C1-20 alkyl or alkylene, C3-20 cycloalkyl or cycloalkylene, C2-4 alkenyl or alkenylene, C2-4 alkynyl or alkynylene, or C6-20 aryl or arylene.Alkenylene is a divalent hydrocarbon group having one or more double bonds, and alkynylene is a divalent hydrocarbon group having one or more triple bonds.Optionally, part or all of H atoms in these groups may be substituted with fluorine, C1-5 alkyl or hydroxy.Specifically, (i) when nC2 is 0, Lei is C1-20 alkyl, C3-20 cycloalkyl, C2-4 alkenyl, C2-4 alkynyl, or C6-20 aryl, and (ii) when nC2 is 1 , Lei is C1-20 alkylene, C3-20 cycloalkylene, C2-4 alkenylene, C2-4 alkynylene, or C6-20 arylene. Lc2S are each independently C1-20 alkylene, C3-20 cycloalkylene, C2-4 alkenylene, C2-4 alkynylene, or C6-20 arylene.When nC2 is 0, and at least two of Rci , Rc2, and Lei are alkyl, these alkyls may form a ring. For example, when Rc2 is hydrogen, and Rci and Lei together form a saturated 6-membered ring containing Rci, Lei and a carbon atom to which a hydroxy group is bonded, the alcohol derivative (C) is cyclohexanol.Ld and LC2 are each independently, preferably, optionally fluorine-substituted, C1-5 alkylene, C2-4 alkenylene, C2-4 alkynylene, or phenylene (Ce arylene); more preferably, optionally fluorine-substituted, C2-4 alkylene, C2 alkenylene, C2 alkynylene, or phenylene; still more preferably C2 alkenylene or C2 alkynylene; and most preferably C2 alkynylene (acetylene). nm is 0, 1 , or 2, preferably 0 or 1 , and more preferably 0. nc2 is 0 or 1 , and preferably 1 .

[0046] Specific examples of the alcohol derivative (C) in which nC2 in Formula (C) is 0 include ethanol; 1 -propanol, 2-propanol; 1 -butanol, 2-butanol, 2-methyl-1 -propanol, tert-butanol; 1 -pentanol, 2-pentanol, 3-pentanol, 2-methyl-1 -butanol, 3-methyl-1 - butanol, 2-methyl-2-butanol, 3-methyl-2-butanol, 2, 2-dimethyl-1 -propanol, cyclopentanol; 1 -hexanol, 2-hexanol, 3-hexanol, 2-methyl-1 -pentanol, 2-methyl-2- pentanol, 3-methyl-3-pentanol, 4-methyl-2-pentanol, 2-ethyl-1 -butanol, and cyclohexanol; and partially fluorinated compounds and fully fluorinated compounds thereof.

[0047] Specific examples of the alcohol derivative (C) in which nC2 in Formula (C) is 1 include 3-hexyne-2,5-diol, 2,5-dimethyl-3-hexyne-2,5-diol, 3,6-dimethyl-4-octyne- 3,6-diol, 3,6-dimethyl-4-octene-3,6-diol, 3,6-dimethyl-3,6-octanediol, 2, 3,6, 7- tetramethyl-4-octyne-3,6-diol, 1 ,4-butynediol, 2,4-hexadiyne-1 ,6-diol, 1 ,4- butanediol, 2,2,3,3-tetrafluoro-1 ,4-butanediol, 2,2,3,3,4,4,5,5-octafluoro-1 ,6- hexanediol, cis-1 ,4-dihydroxy-2-butene, 1 ,4-benzenedimethanol, 4, 7-di hydroxy- 2,4, 7, 9-tetramethyl-5-decyne, and combinations thereof.

[0048] The content of the alcohol derivative (C) based on the electronic device manufacturing aqueous solution is preferably 0.001 to 10 mass%, more preferably 0.005 to 5 mass%, still more preferably 0.01 to 1 mass%, and even more preferably 0.01 to 0.1 mass%. An embodiment in which no alcohol derivative (C) is contained is also a preferred embodiment of the present disclosure.

[0049] Resin (D)The electronic device manufacturing aqueous solution of the present disclosure may comprise a resin (D). The resin (D) means an organic polymer having a relatively large molecular weight, and in the present disclosure, the resin (D) means a compound having a molecular weight of 1 ,000 or more. The resin (D) is a component other than the component (A) to component (C). Examples of the resin (D) include novolak derivatives, phenol derivatives, polystyrene derivatives, polyacrylic acid derivatives, polymethacrylic acid derivatives, polyacrylamide derivatives, polyethylene oxide derivatives, polyvinylamide derivatives, polyamine derivatives, polymaleic acid derivatives, polycarbonate derivatives, polyvinylpyrrolidone derivatives, polyvinyl alcohol derivatives, and copolymers of these combinations, and the resin (D) is preferably at least one selected from the group consisting of polyacrylic acid derivatives, polymethacrylic acid derivatives, and polyvinyl alcohol derivatives. The mass average molecular weight Mw of the resin (D) is preferably 1 ,500 to 300,000, more preferably 2,000 to 250,000, and still more preferably 2,500 to 200,000. In the present disclosure, the mass average molecular weight is in terms of polymethyl methacrylate and is a value measured bygel permeation chromatography using polymethyl methacrylate as a standard. The resin (D) is used to adjust the viscosity of the electronic device manufacturing aqueous solution or to cure the coating film of the electronic device manufacturing aqueous solution to form a film. The resin (D) also includes a photosensitive resin that is generally contained in a photosensitive resin composition.

[0050] The content of the resin (D) based on the electronic device manufacturing aqueous solution is preferably 0 to 10 mass% (more preferably 0 to 3 mass%; still more preferably 0 to 1 mass%; and even more preferably 0 to 0.1 mass%). An embodiment in which the electronic device manufacturing aqueous solution does not comprise any resin (D) (the content of the resin (D) is 0.00 mass%) is a particularly preferred embodiment of the present disclosure.

[0051] Acid (E)The electronic device manufacturing aqueous solution of the present disclosure may comprise an acid (E). The acid (E) can be used in order to adjust the pH value of the electronic device manufacturing aqueous solution or to improve the solubility of additive components. The acid (E) is a component other than the component (A) to component (D). Examples of the acid (E) include aromatic carboxylic acids.

[0052] The content of the acid (E) based on the electronic device manufacturing aqueous solution is preferably 0 to 10 mass% (more preferably 0.0001 to 0.1 mass%; still more preferably 0.0002 to 0.001 mass%). An embodiment in which no acid (E) is contained (the content is 0.000 mass%) is also a preferred embodiment of the present disclosure.

[0053] Additive (F)The electronic device manufacturing aqueous solution of the present disclosure may comprise an additive (F). The additive (F) preferably comprises at least one selected from the group consisting of other nitrogen-containing compounds, other surfactants (surfactants different from the ionic surfactant (A)),other bases, a disinfectant, an antibacterial agent, an antiseptic, and an antifungal agent.

[0054] The content of the additive (F) based on the electronic device manufacturing aqueous solution is preferably 0.0001 to 10 mass%, more preferably 0.0001 to 0.1 mass%, and still more preferably 0.0002 to 0.001 mass%. An embodiment in which the electronic device manufacturing aqueous solution does not comprise the additive (F) (0.0000 mass%) is also a preferred embodiment of the present disclosure.

[0055] After having the components dissolved, the electronic device manufacturing aqueous solution of the present disclosure can be filtered with a filter in order to remove impurities and / or insoluble matters.The surface tension of the electronic device manufacturing aqueous solution is preferably 25 to 70 mN / m, more preferably 25 to 60 mN / m, and still more preferably 28 to 60 mN / m. The surface tension is measured by a capillary rise type surface tension meter. It is desirable to use the device described in the Examples as the capillary rise type surface tension meter.

[0056] <Method for Producing Resist Pattern>The present disclosure also provides a method for producing a resist pattern using the aforementioned electronic device manufacturing aqueous solution. A photosensitive resin composition (resist composition) used in the method may be either a positive type or a negative type, and is preferably a positive type. One embodiment of a method for producing a resist pattern, to which the electronic device manufacturing aqueous solution of the present disclosure is applied, comprises the following steps of:(1 ) applying a photosensitive resin composition to a substrate, with or without one or more intermediate layers interposed between the photosensitive resin composition and the substrate, to form a photosensitive resin layer,(2) exposing the photosensitive resin layer to radiation,(3) developing the exposed photosensitive resin layer, and(4) cleaning the developed layer with the electronic device manufacturing aqueous solution.For clarity, the numbers in parentheses indicate the sequence of steps. For example, the step (3) is performed before (4). After (3), (3.1 ) is performed, and the step (4) is then performed.

[0057] Details will be described below.First, a photosensitive resin composition is applied (e.g., layered) above a substrate, such as a silicon substrate or a glass substrate, which has been pretreated as necessary, to form a photosensitive resin layer. A known method can be used for layering, but a coating method such as spin coating is suitable. The photosensitive resin composition can be directly layered on the substrate, or can be layered with one or more intermediate layers (e.g., BARC) interposed between the photosensitive resin composition and the substrate. An antireflection film (e.g., TARC) may be layered above the photosensitive resin layer (on the side opposite to the substrate). A layer other than the photosensitive resin layer will be described later. The formation of the antireflection film above or below the photosensitive resin layer enables to improve the cross-sectional shape and the exposure margin.

[0058] Representative examples of the positive or negative photosensitive resin composition used in the method for producing a resist pattern of the present disclosure include positive photosensitive resin compositions comprising a quinonediazide-based photosensitive agent and an alkali-soluble resin, and chemically amplified photosensitive resin compositions. From a point of view of forming a high-resolution fine resist pattern, a chemically amplified photosensitive resin composition is preferable, and examples thereof include a chemically amplified PHS-acrylate hybrid EUV resist composition. These are more preferably positive photosensitive resin compositions.

[0059] Examples of the quinonediazide-based photosensitive agent to be used in the aforementioned positive photosensitive resin composition that comprises a quinonediazide-based photosensitive agent and an alkali-soluble resin include 1 ,2-benzoquinonediazide-4-sulfonic acid, 1 ,2-naphthoquinonediazide-4-sulfonic acid, 1 ,2-naphthoquinonediazide-5-sulfonic acid, and esters or amides of these sulfonic acids. Examples of the alkali-soluble resin include polyvinyl phenols, polyvinyl alcohols, acrylic acid copolymers, and methacrylic acid copolymers.

[0060] Examples of the chemically amplified photosensitive resin composition include a positive chemically amplified photosensitive resin composition in which a compound (a photoacid generator) that generates an acid upon irradiated with radiation and a resin whose polarity is increased by the action of the acid generated from the photoacid generator and solubility in a developer solution changes between an exposed portion and an unexposed portion are contained, and a negative chemically amplified photosensitive resin composition that comprises an alkali-soluble resin, a photoacid generator, and a crosslinking agent, in which crosslinking of the resin occurs by the crosslinking agent due to the action of the acid, and solubility in a developer solution changes between an exposed portion and an unexposed portion.

[0061] As the resin in which the polarity is increased by the action of the aforesaid acid and the solubility in a developer solution is changed between an exposed portion and an unexposed portion, example thereof include a resin in which a group that is decomposed by the action of the acid to generate an alkali-soluble group is included in the main chain or the side chain of the resin, or in both the main chain and the side chain of the resin. Representative examples thereof include a polymer in which an acetal group or a ketal group as a protecting group is introduced into a hydroxystyrene-based polymer (PHS) (e.g., JP H02-19847 A), and a similar polymer in which a t-butoxycarbonyloxy group or a p-tetrahydropyranyloxy group is introduced as a group for acidolysis (e.g., JP H02-209977 A).

[0062] The photoacid generator is not particularly limited as long as it is a compound that generates an acid upon irradiated with radiation, and examples thereof include onium salts such as diazonium salts, ammonium salts, phosphonium salts, iodonium salts, sulfonium salts, selenonium salts, and arsonium salts,organohalogen compounds, organometallic / organohalides, photoacid generators having an o-nitrobenzyl type protecting group, compounds that photodegrade to generate sulfonic acid such as iminosulfonates, disulfone compounds, diazoketosulfone compounds, and diazodisulfone compounds. Alternatively, there can also be used a polymeric photoacid generator in which a photoacid generating group of the aforementioned compound or the compound itself is introduced into a main chain or a side chain of the polymer.

[0063] The chemically amplified photosensitive resin composition may further comprise an acid-decomposable dissolution-inhibitive compound, a dye, a plasticizer, a surfactant, a photosensitizer, an organic basic compound, a compound that promotes solubility in a developer solution, etc., as necessary.

[0064] The aforementioned photosensitive resin composition is applied onto a substrate using, for example, an appropriate coating apparatus such as a spinner or a coater and a coating method, and heated to remove the solvent in the photosensitive resin composition to form a photosensitive resin layer. The heating temperature is preferably 70 to 150°C, and more preferably 90 to 150°C. The heating time is preferably 10 to 600 seconds, more preferably 10 to 180 seconds, and still more preferably 30 to 120 seconds.

[0065] In the method for producing a resist pattern of the present disclosure, a film or a layer other than the photosensitive resin layer may also be present. The substrate and the photosensitive resin layer may not be in direct contact with each other, and an intermediate layer may be interposed between the substrate and the photosensitive resin layer. The intermediate layer refers to a layer formed between the substrate and the photosensitive resin layer, and is also referred to as a bottom layer. Examples of the bottom layer include a substrate modification film, a planarization film, a bottom anti-reflective coating (BARC), an inorganic hard mask intermediate layer (silicon oxide film, silicon nitride film or silicon oxynitride film), and an adhesion film. The planarization film is, for example, an SOC. Regarding the formation of an inorganic hardmask intermediate layer, for example, JP 5336306 Bcan be referred to. The intermediate layer may be one layer or may be composed of a plurality of layers. A top layer may be formed on the photosensitive resin layer. The top layer is, for example, a top anti-reflective coating (TARC).

[0066] In the method for producing a resist pattern of the present disclosure, a known layered structure can be used according to process conditions, and examples thereof include the following layered structures. substrate / photosensitive resin layer substrate / bottom layer / photosensitive resin layer substrate / planarization film / photosensitive resin layer substrate / planarization film / photosensitive resin layer / top layer substrate / planarization film / BARC / photosensitive resin layer substrate / planarization film / inorganic hardmask intermediate layer / photosensitive resin layer substrate / planarization film / adhesion film / photosensitive resin layer substrate / substrate modification layer / planarization film / photosensitive resin layer and substrate / substrate modification layer / planarization film / adhesion film / photosensitive resin layer.These layers can be cured by heating and / or exposing to light after application, or can be deposited by using a known method such as a CVD method. These layers can be removed by a known method such as etching, and can be patterned by using each upper layer as a mask.

[0067] In one preferred embodiment of the present disclosure, the photosensitive resin composition is applied directly onto the substrate without interposing any intermediate layer. In another embodiment of the present disclosure, no TARC is formed on the photosensitive resin layer. In another embodiment of the present disclosure, a thickened resist pattern is formed by forming a thickened layer on the photosensitive resin layer, as described in WO 2022 / 129015.

[0068] The photosensitive resin layer is exposed to light through a predetermined mask. When other layers are also included (top layer, etc.), they may be exposed to light together. The wavelength of radiation (light) used for exposure is not particularly limited, but exposure with light having a wavelength of 13.5 to 248 nm is preferable. Specifically, a KrF excimer laser (248 nm in wavelength), an ArF excimer laser (193 nm in wavelength), extreme ultraviolet radiation (EUV, 13.5 nm in wavelength), or the like can be used, and EUV is more preferable. These wavelengths have an allowable range of ±5%, preferably have an allowable range of ±1 %. After the exposure, a post-exposure bake (PEB) can also be performed, as necessary. The temperature of the PEB is preferably 70 to 150°C, and more preferably 80 to 120°C. The heating time of the PEB is preferably 0.3 to 5 minutes, and more preferably 0.5 to 2 minutes.

[0069] Next, development is performed using a developer solution. In the development of the method for producing a resist pattern of the present disclosure, a 2.38 mass% (±1 % is allowed) tetramethylammonium hydroxide (TMAH) aqueous solution is preferably used. A surfactant or the like can be added to this developer solution. The temperature of the developer solution is preferably 5 to 50°C, and more preferably 25 to 40°C. The development time is preferably 10 to 300 seconds, and more preferably 20 to 60 seconds. As a development method, a known method such as puddle developing can be used. As described above, the resist pattern of the present invention encompasses not only a resist pattern that is formed by exposing and developing a resist film but also a resist pattern that is coated with another layer or film and has an increased wall thickness.

[0070] The resist pattern (the developed photosensitive resin layer) created through the aforementioned steps is in an uncleaned condition. This resist pattern can be cleaned with the electronic device manufacturing aqueous solution of the present disclosure. The time for allowing the electronic device manufacturing aqueous solution to contact with the resist pattern, that is, the processing time is preferably 1 second or more. The treatment temperature can be freely chosen. The method for putting the electronic device manufacturing aqueous solution on the resist can alsobe freely chosen, and for example, the resist can be contacted with the electronic device manufacturing aqueous solution by immersing a resist substrate into the electronic device manufacturing aqueous solution or by dripping the electronic device manufacturing aqueous solution onto the surface of a rotating resist substrate. These methods may be appropriately combined.After the developed layer is cleaned, the electronic device manufacturing aqueous solution can be removed. The removal can be performed by, for example, spin drying.The method for producing a resist pattern according to one embodiment preferably further comprises the following step of:(5) removing the electronic device manufacturing aqueous solution from the cleaned layer (resist pattern).

[0071] In the method for producing a resist pattern of the present disclosure, before and / or after a cleaning process using the electronic device manufacturing aqueous solution, the resist pattern after development can be cleaned with another cleaning liquid. The other cleaning liquid is preferably water, and more preferably pure water (DIW, deionized water, etc.). The cleaning before the cleaning process is useful for cleaning the developer solution attached to the resist pattern. The cleaning after the cleaning process is useful for cleaning the electronic device manufacturing aqueous solution. A preferred embodiment of the method for producing a resist pattern of the present disclosure is a method in which pure water is poured into a developed resist pattern to clean the pattern while replacing a developer solution with pure water, and the electronic device manufacturing aqueous solution is poured into the resist pattern, while the pattern is immersed in pure water, to clean the pattern while replacing pure water with the electronic device manufacturing aqueous solution. Cleaning by another cleaning liquid or the electronic device manufacturing aqueous solution may be performed by a known method. For example, the cleaning can be performed by immersing a resist substrate into another cleaning liquid or the electronic device manufacturing aqueous solution or by dripping another cleaning liquid or the electronic device manufacturing aqueous solution onto the surface of a rotating resist substrate. These methods may be appropriately combined.

[0072] The method for producing a resist pattern according to one embodiment preferably further comprises the following step of:(3.1 ) applying a cleaning solution to a resist pattern and cleaning the developed layer.Step (3.1 ) is performed, as described above, after (3) developing the exposed photosensitive resin layer, and before (4) cleaning the developed layer with the electronic device manufacturing aqueous solution. The method for producing a resist pattern preferably does not comprise a cleaning step other than cleaning with the cleaning solution in step (3.1 ) and cleaning with the electronic device manufacturing aqueous solution in step (4). In one preferred embodiment, the cleaning solution in step (3.1 ) has a larger surface tension than the electronic device manufacturing aqueous solution of the present disclosure.

[0073] Pattern collapse is likely to occur at locations where the interval between the walls of the resist pattern is the smallest. Particularly, pattern collapse is noticeable at locations where the walls of the resist pattern are parallel. In the present disclosure, the distance between locations where the interval between the resist patterns is the smallest on one circuit unit is defined as the minimum space size. One circuit unit preferably forms one semiconductor device in a subsequent step. As one semiconductor device, an embodiment including one circuit unit in the horizontal direction and a plurality of circuit units in the vertical direction is also preferable. Unlike test samples, if there are fewer locations where the interval between the walls of the resist pattern is small, the frequency of defects occurring decreases, and as a result, the frequency of defective products occurring also decreases. The minimum space size of the resist pattern in one circuit unit is preferably 5 to 30 nm, more preferably 10 to 20 nm, and still more preferably 10 to 17 nm.

[0074] <Method of Manufacturing Device>A method for manufacturing a device of the present disclosure comprises the method for producing a resist pattern using the electronic device manufacturing aqueous solution.

[0075] <Method for Manufacturing Device>The method for manufacturing a device preferably comprises etching a substrate by using the resist pattern produced by the aforementioned method as a mask to process the substrate. After the processing, the resist film is peeled off, as necessary. Preferably, the device is a semiconductor. The resist pattern is used as a mask for etching and thereby enabling to process the intermediate layer and / or the substrate. A known method such as dry etching or wet etching can be used for the etching, and dry etching is more suitable. For example, the resist pattern can be used as an etching mask to etch the intermediate layer, and the resultant intermediate layer pattern can be used as an etching mask to etch a substrate, thereby processing the substrate. The substrate can be directly etched while etching layers (e.g., an intermediate layer) below the resist layer by using the resist pattern as an etching mask. The processed substrate becomes, for example, a patterned substrate. The formed pattern can be used to form wiring on the substrate. The layers on the substrate can be removed by dry etching with O2, CF4, CHF3, CI2 or BCI3. As the dry etching gas, O2 or CF4 can be preferably used.

[0076] In the method for manufacturing a device, ion-doping can be performed on the substrate or the bottom layer using the resist pattern produced by the aforementioned method as a mask. Ion-doping is performed on the substrate or the bottom layer using the formed resist pattern as a mask, or the lower layer of the resist pattern is processed using the formed resist pattern as a mask to form a lower layer pattern, and ion-doping is performed on the substrate using the lower layer pattern as a mask. Ion-doping can be performed by a known method using a known ion-doping device. Generally, in the manufacturing of semiconductor devices, display devices, and the like, an impurity diffusion layer is formed on the surface of a substrate. The impurity diffusion layer is usually formed in two steps of impurity introduction and diffusion. One of the methods of impurity introduction ision-doping in which impurities such as phosphorus and boron are ionized in vacuum and accelerated at a high electric field to be implanted into the surface of the substrate or the layer. The ion acceleration energy during ion-doping is generally 10 to 200 keV. Examples of ion sources (impurity elements) include ions such as boron, phosphorus, arsenic, and argon. Examples of a thin film on the substrate include a thin film of silicon, silicon dioxide, silicon nitride, or aluminum.

[0077] The method for manufacturing a device preferably comprises forming wiring on the processed substrate.

[0078] <Stress Applied to Resist Wall>As described in Namatsu et al. Appl. Phys. Lett. 1995(66) p. 2655-2657, and schematically shown in Fig. 1 of WO 2023 / 170021 , the stress applied to the resist wall during rinsing and drying due to the capillary phenomenon of the rinsing composition can be expressed by the following formula.Omax=(6ycose / D)x(H / W)2Omax: maximum stress applied to the resist wall, y: surface tension of the rinsing composition9: contact angle, D: interval between walls H: wall height, W: wall widthThese parameters can be measured by known methods, for example, using an SEM image.

[0079] As can be understood from the above formula, a smaller D or a smaller W causes a larger stress to be generated. In the present disclosure, “pitch size” refers to one unit of a resist pattern unit array having W and D as shown in Fig. 1 . This means that, the finer a resist pattern is required to be (the smaller the pitch size), the higher the stress applied to the resist pattern. Thus, as the pattern becomes finer, conditions become more stringent, and more improvements are required for an electronic device manufacturing aqueous solution (for example, a rinsing composition).[Examples]

[0080] The present invention will be described below using various examples. Note that the aspects of the present invention are not limited to these examples.

[0081] Preparation Example of Electronic Device Manufacturing Aqueous Solution>The components are shown in Table 1 .

[0082] [Table 1-1]Table 1[Table 1-2](Continued from Table 1)

[0083] Compound A10 is synthesized by the method described in WO 2016 / 040551.

[0084] Components shown in each table are added to DIW in their respective amounts. The mixture is stirred at room temperature for 5 minutes. It is visually confirmed that the components are dissolved. The obtained solution is filtered (pore size = 10 nm) to obtain an electronic device manufacturing aqueous solution of each example.

[0085] pH MeasurementA high-precision pH sensor 2530-C (Taiyo) is attached to a pH meter AS800 (As One). A calibration curve is created using three or more calibration curve creating standard solutions under conditions of 25°C, atmospheric conditions and 1 atm, and the pH of each electronic device manufacturing aqueous solution is measured.

[0086] Surface Tension MeasurementThe surface tension of each electronic device manufacturing aqueous solution is measured using a capillary rise type surface tension meter DG-1 (Surfgauge INSTRUMENTS).

[0087] Experiment 1 : Performance Evaluation for Defects (1 )A silicon substrate is treated with hexamethyldisilazane (HMDS) at 90°C for 30 seconds. A chemically amplified PHS-acrylate hybrid resist is spin-coated thereon, followed by soft baking at 110°C for 60 seconds to form a resist film with a thickness of 35 nm. Thereafter, paddle development is performed with a 2.38% TMAH aqueous solution for 30 seconds. Rinse water starts to flow in a state where the developer solution is paddled on the wafer, and the developer solution is replaced with rinse water while being rotated, and the rotation is stopped in a state of being paddled with rinse water. Then, while dripping the electronic device manufacturing aqueous solution onto the wafer, which is in a state of being paddled with rinse water, cleaning is performed at low-speed rotation for 30 seconds, andrinse water is replaced with the electronic device manufacturing aqueous solution. Thereafter, high-speed rotation processing is performed to dry the wafer.

[0088] In Comparative Example 11 , after the developing solution is replaced with rinse water, high-speed rotation processing is performed to dry the wafer.

[0089] The obtained resist film is observed using a defect inspection apparatus LS9110 (Hitachi High-Tech Corporation), and the number of foreign matter attached to the resist surface is counted.

[0090] Experiment 2: Performance Evaluation for Defects (2)A silicon substrate is treated with HMDS at 90°C for 30 seconds. A chemically amplified PHS-acrylate hybrid resist is spin-coated thereon, followed by soft baking at 110°C for 60 seconds to form a resist film with a thickness of 35 nm. The obtained substrate is exposed using an EUV exposure system (ASML, NXE:3400) through a mask with a size of 18 nm (line:space = 1 :1 ). After carrying out postexposure bake (PEB) at 110°C for 60 seconds, paddle development is performed with a 2.38% TMAH aqueous solution for 30 seconds. Rinse water starts to flow in a state where the developer solution is paddled on the wafer, and the developer solution is replaced with rinse water while being rotated, and the rotation is stopped in a state of being paddled with rinse water. Then, while dripping the electronic device manufacturing aqueous solution onto the wafer, which is in a state of being paddled with rinse water, cleaning is performed at low-speed rotation for 30 seconds, and rinse water is replaced with the electronic device manufacturing aqueous solution. Thereafter, high-speed rotation processing is performed to dry the wafer.

[0091] In Comparative Example 11 , after the developing solution is replaced with rinse water, high-speed rotation processing is performed to dry the wafer.

[0092] The number of foreign matter on the pattern obtained is counted using a defect inspection apparatus UVision4 (Applied Materials), and the number isdefined as the number of defects. The shape of foreign matter is evaluated using a defect observation equipment eDR7280 (KLA-Tencor).

[0093] The number of defects of Comparative Example 11 is used as the reference (100%), and the number of defects is evaluated according to the following criteria. A: The number of defects is less than 30%.B: The number of defects is 30% or more and less than 100%.C: The number of defects is 100% or more and 300% or less.D: All patterns are dissolved.

[0094] Experiment 3: Pattern Collapse EvaluationA cleaned resist pattern is obtained in the same procedure as in Experiment 2. The number of pattern collapses is confirmed using UVision4 and eDR7280.

[0095] Experiment 4: Evaluation for Limit Pattern SizeA silicon substrate is treated with HMDS at 90°C for 30 seconds. A chemically amplified PHS-acrylate hybrid resist is spin-coated thereon, followed by soft baking at 110°C for 60 seconds to form a resist film with a thickness of 50 nm. The obtained substrate is exposed using NXE:3400 through a mask with a size of 16 nm (line:space = 1 :1 ). After carrying out PEB at 110°C for 60 seconds, paddle development is performed with a 2.38% TMAH aqueous solution for 30 seconds. Rinse water starts to flow in a state where the developer solution is paddled on the wafer, and the developer solution is replaced with rinse water while being rotated, and the rotation is stopped in a state of being paddled with rinse water. Then, while dripping the electronic device manufacturing aqueous solution onto the wafer, which is in a state of being paddled with rinse water, cleaning is performed at low- speed rotation for 30 seconds, and rinse water is replaced with the electronic device manufacturing aqueous solution. Thereafter, high-speed rotation processing is performed to dry the wafer.

[0096] In Comparative Example 11 , after the developing solution is replaced with rinse water, high-speed rotation processing is performed to dry the wafer.

[0097] CD measurement SEM CG6300 (Hitachi High-Tech Corporation) is used to confirm the line width and the presence of pattern collapse. As the exposure increases, the line width decreases. The size of minimum line width at which no pattern collapse occurs is defined as a “limit pattern size”. For example, in Comparative Example 11 , a pattern collapse is confirmed at a line width of 16.4 nm, while a pattern collapse is not confirmed at a line width of 16.8 nm, and thus the limit pattern size is determined to be 16.8 nm. In Comparative Example 12, since the pattern is dissolved, evaluation is not possible.

[0098] Experiment 5: Change in Pattern Size When Exposure Dose Is FixedA silicon substrate is treated with HMDS at 90°C for 30 seconds. A chemically amplified PHS-acrylate hybrid resist is spin-coated thereon, followed by soft baking at 110°C for 60 seconds to form a resist film with a thickness of 35 nm. The obtained substrate is exposed using NXE:3400 through a mask with a size of 18 nm (line:space=1 : 1 ). After carrying out PEB at 110°C for 60 seconds, paddle development is performed with a 2.38% TMAH aqueous solution for 30 seconds. Rinse water starts to flow in a state where the developer solution is paddled on the wafer, and the developer solution is replaced with rinse water while being rotated. Then, high-speed rotation processing is performed to dry the wafer. The EUV radiation dose at which the resist pattern is formed with a width of 20.0 nm (line:space=1 :1 ) is used as a reference radiation dose, which corresponds to Comparative Example 11 (DIW).

[0099] In Example 16 and Comparative Example 15, the same operations as above are performed except for the following. Exposure is performed at the above reference radiation dose. After the developer solution is replaced with rinse water, the wafer is stopped in a state of being paddled with rinse water. While dripping the electronic device manufacturing aqueous solution onto the wafer, cleaning is performed at low-speed rotation for 30 seconds, and rinse water is replaced with the electronic device manufacturing aqueous solution. Thereafter, high-speedrotation processing is performed to dry the wafer. The resulting pattern size (line width) is determined. In other words, in Example 16 and Comparative Example 15, a step of cleaning using the electronic device manufacturing aqueous solution is added after the water rinse.

[0100] The pattern size changes in acidic conditions (Comparative Example 15). In basic conditions (Example 16), the pattern size does not change, which is advantageous in controlling the pattern width.

[0101] Table 2 to Table 4 show formulations and evaluation results of electronic device manufacturing aqueous solutions. Table 4 also shows the evaluation results shown in Table 2 and Table 3.

[0102] Table 2Table 3Table 4

Claims

[CLAIMS]

1. An electronic device manufacturing aqueous solution comprising an ionic surfactant(A) and a solvent (S), wherein the solvent (S) comprises water (S-1 ), and a pH of the electronic device manufacturing aqueous solution is 7.5 to 12.0.

2. The electronic device manufacturing aqueous solution according to claim 1 , wherein a pKa (H2O) of the ionic surfactant (A) is -11 .0 to 7.0.

3. The electronic device manufacturing aqueous solution according to claim 1 or 2, further comprising an alkaline component (B), wherein optionally, a content of the alkaline component (B) based on the electronic device manufacturing aqueous solution is 0.0001 to 10 mass%; or optionally, (a content of the alkaline component (B)) I (a content of the ionic surfactant (A)) is 0 to 2.0.

4. The electronic device manufacturing aqueous solution according to any one of claims 1 to 3, wherein the ionic surfactant (A) comprises a monovalent anionic moiety (Aa) and a monovalent cationic moiety (Ac), and the anionic moiety (Aa) is represented by Formula (Aa):[C1]Formula (Aa) wherein,RAI’ is N’ or O’;XAI is -C(=O)- or -S(=O)2-;XA2 is a single bond, -C(=O)- or -S(=O)2-; and nA2 is 0 or 1 ;HCAI and HCA2 are each independently a C1-30 hydrocarbon group, when this hydrocarbon group has an alkyl moiety, one or more methylenes in this hydrocarbon group may or may not be substituted with -O-, part or all of H atoms in this alkyl may or may not be substituted with F, and one or more H atoms in this alkyl may or may not be substituted with OH; andHCAI and HCA2 may or may not be bonded to form a ring structure.

5. The electronic device manufacturing aqueous solution according to any one of claims 1 to 4, wherein the ionic surfactant (A) comprises a monovalent anionic moiety (Aa) and a monovalent cationic moiety (Ac), and the cationic moiety (Ac) is at least one selected from the group consisting of H+, a cation represented by Formula (Ac-2), Li+, Na+and K+:+NHPRa4-p Formula (Ac-2) whereinRas are each independently C1-7 alkyl, one or more H atoms in the C1-7 alkyl may or may not be substituted with OH, and p is 0, 1 , 2, 3, or 4.

6. The electronic device manufacturing aqueous solution according to any one of claims 1 to 5, wherein a Mw of the ionic surfactant (A) is 100 to 800.

7. The electronic device manufacturing aqueous solution according to any one of claims 3 to 6, wherein the alkaline component (B) comprises at least one selected from the group consisting of alkaline components (B-1 ), (B-2) and (B-3): where the alkaline components (B-1 ), (B-2) and (B-3) are represented by Formula (B-1 ), Formula (B-2) and Formula (B-3), respectively;NHqiRb13-qi Formula (B-1 ) wherein,Rb1s are each independently C1-7 alkyl, one or more H atoms in the C1-7 alkyl may or may not be substituted with OH, and q1 is 0, 1 , 2, or 3;+NHq2Rb24-q2 OH’ Formula (B-2) wherein,Rb2s are each independently C1-7 alkyl, one or more H atoms in the C1-7 alkyl may or may not be substituted with OH, and q2 is 0, 1 , 2, 3, or 4;[C2]Formula (B-3) whereinRb3i Rb32 Rb33anc| Rb34are each independently H or a C1-10 hydrocarbon group, andLb3is a C1-10 hydrocarbon chain.

8. The electronic device manufacturing aqueous solution according to any one of claims 1 to 7, having a surface tension of 25 to 70 mN / m: where the surface tension is measured by a capillary rise type surface tension meter.

9. The electronic device manufacturing aqueous solution according to any one of claims 4 to 8, wherein the anionic moiety (Aa) is (Aa-1 ) or (Aa-2): where the anionic moieties (Aa-1 ) and (Aa-2) are represented by Formulae (Aa-1 ) and (Aa-2), respectively;HCAI -XAI -O’ Formula (Aa-1 ) wherein, definitions of HCAI and XAI are the same as described above;Formula (Aa-2) wherein, definitions of HCAI , HCA2, XAI , and XA2 are the same as described above.

10. The electronic device manufacturing aqueous solution according to any one of claims 1 to 9, wherein a content of the ionic surfactant (A) based on the electronic device manufacturing aqueous solution is 0.001 to 10 mass%, optionally, a content of the solvent (S) based on the electronic device manufacturing aqueous solution is 80 to 99.999 mass%; and optionally, a content of the water (S-1 ) contained in the solvent (S) based on the electronic device manufacturing aqueous solution is 80 to 99.999 mass%.

11. The electronic device manufacturing aqueous solution according to any one of claims 1 to 10, further comprising an alcohol derivative (C): where the alcohol derivative (C) is represented by Formula (C);[C4]Formula (C) wherein,Rm, RC2, Res, and Rc4 are each independently hydrogen, fluorine, or C1-5 alkyl,Lei and Lc2 are each independently C1-20 alkyl or alkylene, C3-20 cycloalkyl or cycloalkylene, C2-4 alkenyl or alkenylene, C2-4 alkynyl or alkynylene, or C6-20 aryl or arylene, and part or all of H atoms in these groups may be substituted with fluorine, C1-5 alkyl or hydroxy, when nC2 is 0, and at least two of Rci, Rc2, and Lei are alkyl, these alkyls may form a ring, nm is 0, 1 , or 2, and nc2 is 0 or 1 ; optionally, a content of the alcohol derivative (C) based on the electronic device manufacturing aqueous solution is 0.001 to 10 mass%.

12. The electronic device manufacturing aqueous solution according to any one of claims 1 to 11 , further comprising a resin (D), wherein optionally, a content of the resin (D) based on the electronic device manufacturing aqueous solution is 0 to 10 mass%; optionally, the electronic device manufacturing aqueous solutions further comprises an acid (E), wherein optionally, a content of the acid (E) based on the electronic device manufacturing aqueous solution is 0 to 10 mass%.

13. The electronic device manufacturing aqueous solution according to any one of claims 1 to 12, further comprising an additive (F), wherein optionally, the additive (F) comprises at least one selected from the group consisting of other nitrogen-containing compounds, other surfactants, other bases, a disinfectant, an antibacterial agent, an antiseptic, and an antifungal agent; and optionally, a content of the additive (F) based on the electronic device manufacturing aqueous solution is 0.0001 to 10 mass%.

14. The electronic device manufacturing aqueous solution according to any one of claims 1 to 13, which is a semiconductor manufacturing aqueous solution, wherein optionally, the electronic device manufacturing aqueous solution is a semiconductor substrate fabricating aqueous solution;optionally, the electronic device manufacturing aqueous solution is a semiconductor substrate fabrication process cleaning liquid; optionally, the electronic device manufacturing aqueous solution is a lithography cleaning liquid; or optionally, the electronic device manufacturing aqueous solution is a resist pattern cleaning liquid.

15. A method for producing a resist pattern using the electronic device manufacturing aqueous solution according to any one of claims 1 to 14.

16. The method for producing a resist pattern according to claim 15, comprising the following steps of:(1 ) applying a photosensitive resin composition to a substrate, with or without one or more intermediate layers interposed between the photosensitive resin composition and the substrate, to form a photosensitive resin layer,(2) exposing the photosensitive resin layer to radiation,(3) developing the exposed photosensitive resin layer, and(4) cleaning the developed layer with the electronic device manufacturing aqueous solution according to any one of claims 1 to 14.

17. The method for producing a resist pattern according to claim 16, further comprising a following step of:(3.1 ) applying a cleaning solution to a resist pattern and cleaning the developed layer.

18. The method for producing a resist pattern according to claim 16 or 17, wherein the photosensitive resin composition is a chemically amplified photosensitive resin composition, and optionally, exposure is performed using extreme ultraviolet light.

19. The method for producing a resist pattern according to any one of claims 15 to 18, wherein a resist pattern having a minimum space size of 5 to 30 nm is produced.

20. A method for manufacturing a device, comprising the method for producing a resist pattern according to any one of claims 15 to 19, wherein optionally, the method for manufacturing a device comprises etching a substrate by using the produced resist pattern as a mask to process the substrate; optionally, the method for manufacturing a device comprises performing ion-doping on a substrate or a bottom layer using the produced resist pattern as a mask; and optionally, the method for manufacturing a device includes forming wiring on the processed substrate.

Images