Substrate processing apparatus

Abstract

The present disclosure relates to a substrate processing apparatus. A substrate processing apparatus according to an embodiment disclosed herein comprises: a support chuck supporting a semiconductor substrate; a plurality of light absorbing units disposed on one surface of the support chuck; and a plurality of lasers for irradiating at least a portion of the plurality of light absorbing units with laser light, wherein one surface of each of the plurality of light absorbing units exposed to the laser light may be surface-modified by texturing.

Description

substrate processing device

[0001] The present disclosure relates to semiconductor processing equipment, and more specifically, to a substrate processing device that performs a heating process on a semiconductor substrate.

[0002] Semiconductor integrated circuits are typically very small and thin silicon chips, but they are comprised of various electronic components. To create a single semiconductor chip, they undergo a variety of manufacturing processes, including photolithography, etching, deposition, reflow, and packaging. Some semiconductor manufacturing processes require a heating process for the substrate, and this is typically achieved by heating the chuck that supports the semiconductor substrate.

[0003] Conventional semiconductor manufacturing processes utilize either a fluid-flowing tube embedded within the chuck or a heat source to heat the chuck. This method, utilizing a fluid-flowing tube embedded within the chuck, can increase the chuck temperature by controlling the flow rate or temperature of the fluid flowing through the tube. Conversely, methods utilizing a heat source embedded within the chuck can increase the chuck temperature by supplying power to the heat source. However, these methods have the disadvantage of requiring a relatively long time to reach the target temperature for semiconductor processing and consuming significant power.

[0004] In this regard, reference may be made to Korean Patent Publication No. 10-2006-0061198A and Korean Patent Publication No. 10-2020-0096747A.

[0005] The present disclosure aims to provide a substrate processing device that performs a heating process on a semiconductor substrate using a laser.

[0006] The present disclosure aims to provide a substrate processing device including a light absorbing portion to which at least one of texturing, anti-reflective coating, and thermal interface material is applied.

[0007] The problems to be solved by the present disclosure are not limited to the problems described above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

[0008] A substrate processing device according to one embodiment of the present disclosure includes a support member for supporting a semiconductor substrate, a plurality of light absorbing portions arranged on one surface of the support member, and a plurality of lasers for irradiating laser light to at least some of the plurality of light absorbing portions, wherein one surface of each of the plurality of light absorbing portions exposed to the laser light can be surface modified by texturing.

[0009] As an example, the surface modification can be formed by a chemical etching process.

[0010] For example, a thermal interface material may be applied to one surface of each of the plurality of light absorbing portions adjacent to the support.

[0011] For example, an anti-reflective coating layer may be formed on one surface of each of the plurality of light absorbing portions exposed to the laser light.

[0012] For example, the light reflecting coating layer can be formed by an inorganic deposition process.

[0013] For example, a thermal interface material may be applied to one surface of each of the plurality of light absorbing portions adjacent to the support.

[0014] For example, the area of ​​the plurality of light absorbing portions exposed to the laser light may be 50% or more of the area of ​​one side of the support.

[0015] For example, the laser output wavelength of each of the plurality of lasers can be determined in a range of 700 nm or more and 1000 nm or less.

[0016] According to another embodiment of the present disclosure, a substrate processing device includes a support member for supporting a semiconductor substrate, a plurality of light absorbing portions arranged on one surface of the support member, and a plurality of lasers for irradiating laser light to at least some of the plurality of light absorbing portions, wherein an anti-reflective coating layer may be formed on one surface of each of the plurality of light absorbing portions exposed to the laser light.

[0017] According to another embodiment of the present disclosure, a substrate processing device includes a support member for supporting a semiconductor substrate, a plurality of light absorbing portions arranged on one surface of the support member, and a plurality of lasers for irradiating laser light to at least some of the plurality of light absorbing portions, wherein a thermal interface material may be applied to one surface of each of the plurality of light absorbing portions adjacent to the support member.

[0018] According to an embodiment of the present disclosure, by performing a heating process on a semiconductor substrate using a laser, a target temperature for performing a semiconductor manufacturing process can be reached in a relatively short period of time.

[0019] According to an embodiment of the present disclosure, by using a light absorbing portion to which at least one of texturing, anti-reflective coating, and thermal interface material is applied, the absorption efficiency of light energy used in a heating process for a semiconductor substrate can be increased.

[0020] The effects according to the present disclosure are not limited to the effects described above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below.

[0021] FIG. 1 is a block diagram illustrating a substrate processing system according to one embodiment of the present disclosure.

[0022] FIG. 2 is a cross-sectional view of a substrate processing device according to an embodiment of the present disclosure.

[0023] Figure 3 is a drawing showing a light absorbing part composed of a silicon absorbing element.

[0024] FIG. 4a is a drawing illustrating a light absorbing portion to which texturing is applied according to one embodiment of the present disclosure.

[0025] Figure 4b is a drawing for comparing a light absorbing part composed of a silicon absorbing element and a light absorbing part with texture applied.

[0026] FIG. 5 is a drawing showing a light absorbing portion to which an anti-reflective coating is applied according to one embodiment of the present disclosure.

[0027] FIG. 6 is a drawing showing a light absorbing portion to which a thermal interface material is applied according to one embodiment of the present disclosure.

[0028] FIG. 7 is a drawing illustrating various shapes of a light absorbing portion that can be formed according to an embodiment of the present disclosure.

[0029] FIG. 8 is a drawing for explaining the arrangement structure of a light absorbing portion according to one embodiment of the present disclosure.

[0030] FIG. 9 is a diagram illustrating a configuration of an electronic device according to an embodiment of the present disclosure.

[0031] FIG. 10 is a block diagram illustrating an electronic device according to an embodiment of the present disclosure.

[0032] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the contents described in the attached drawings. However, the present invention is not limited or restricted by the exemplary embodiments. Unless otherwise defined, all terms (including technical and scientific terms) used in this specification shall be used with meanings that can be commonly understood by those of ordinary skill in the technical field to which this disclosure pertains. However, this may vary depending on the intentions of those skilled in the art, precedents, the emergence of new technologies, etc.

[0033] Additionally, terms defined in commonly used dictionaries should not be interpreted ideally or excessively unless explicitly and specifically defined otherwise. In certain cases, terms may be arbitrarily selected by the applicant, in which case their meanings will be described in detail in the relevant description. Therefore, the terms used in this disclosure should be defined based on their meaning and the overall content of this disclosure, rather than simply their names.

[0034] Throughout this specification, when a part is said to "include" a certain component, this does not mean that other components may be included, but rather that other components may be excluded, unless specifically stated otherwise. Furthermore, the singular forms used herein also include plural forms unless specifically stated otherwise. Furthermore, the expression "at least one of a, b, and / or c" used throughout this specification can encompass "a alone," "b alone," "c alone," "a and b," "a and c," "b and c," or "all of a, b, and c."

[0035] Meanwhile, terms such as "first and / or second" used in this specification may be used to describe various components, but are only used to distinguish one component from another and are not intended to be limited to the components referred to by those terms. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and the second component may also be referred to as the first component.

[0036] In addition, terms such as “unit”, “module”, etc. described in this specification mean a unit that processes at least one function or operation, which may be implemented by hardware or software, or a combination of hardware and software. In addition, embodiments of the present disclosure in this specification may be represented by functional block configurations and various processing steps. These functional blocks may be implemented by various numbers of hardware or / and software configurations that execute specific functions. For example, embodiments of the present disclosure may employ direct circuit configurations such as memory, processing, logic, look-up tables, etc. that may execute various functions under the control of one or more microprocessors or other control devices.

[0037] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In describing the embodiments, descriptions of technical details that are well known in the technical field to which the present invention pertains and are not directly related to the present invention will be omitted. This is to convey the gist of the present invention more clearly without obscuring unnecessary explanation. For the same reason, some components in the accompanying drawings are exaggerated, omitted, or schematically depicted. Furthermore, the size of each component does not entirely reflect the actual size. Throughout this specification, the same reference numerals may refer to the same or corresponding components.

[0038] FIG. 1 is a block diagram illustrating a substrate processing system (10) according to one embodiment of the present disclosure.

[0039] Referring to FIG. 1, a substrate processing system (10) according to an embodiment of the present disclosure may include a substrate processing device (110) and an electronic device (120).

[0040] A substrate processing device (110) according to an embodiment of the present disclosure can perform a semiconductor process on a substrate placed on the substrate processing device (110) and can be included in semiconductor processing equipment. In an embodiment of the present disclosure, a substrate that can be placed on the substrate processing device (110) can be at least one of a semiconductor wafer, a mask, a glass substrate, and a liquid crystal display (LCD).

[0041] According to an embodiment of the present disclosure, the substrate processing device (110) may be a device that performs temperature control on a substrate during a semiconductor chip manufacturing process, and more specifically, may be a device that performs a heating process that requires a temperature increase on the substrate. For example, the substrate processing device (110) may be a device that performs a heating process on a substrate during at least one process among a reflow process, a plasma process, a package process, a reflow process, an etching process, a deposition process, a photo process, and a heat treatment process. The substrate processing device (110) according to an embodiment of the present disclosure may include a laser facility for performing the heating process.

[0042] An electronic device (120) according to an embodiment of the present disclosure may control the operation of a substrate processing device (110) based on semiconductor process recipe information. In some embodiments, the semiconductor process recipe information may be stored in a memory included in the electronic device (120), and the semiconductor process recipe information may include information related to a semiconductor process performed in the substrate processing device (110). Specifically, the semiconductor process recipe information may include at least a portion of semiconductor process procedure information performed in the substrate processing device (110), specification information for components included in the substrate processing device (110) (e.g., thermal conductivity information of a support, output wavelength range information of a laser, light absorption rate information of a light absorbing portion, etc.), and temperature information for a heating process. The electronic device (120) can monitor the operating status of the substrate processing device (110), process necessary information corresponding to the operating status of the substrate processing device (110) and semiconductor process recipe information, and control at least one component included in the substrate processing device (110) to control the temperature of the substrate processing device (110).

[0043] Meanwhile, in FIG. 1, the substrate processing device (110) and the electronic device (120) are illustrated as separate components, but this is only one embodiment according to the present disclosure and does not limit the form of the substrate processing system (10) according to the present disclosure. Specifically, the substrate processing device (110) and the electronic device (120) may be electrically connected or wirelessly connected as illustrated in FIG. 1. When the substrate processing device (110) and the electronic device (120) are wirelessly connected, each of the substrate processing device (110) and the electronic device (120) may include a communication module for communication. Alternatively, the electronic device (120) may be implemented by being included in the substrate processing device (110).

[0044] A substrate processing system (10) according to an embodiment of the present disclosure can perform a heating process on a semiconductor substrate using a laser. Specifically, the substrate processing system (10) can perform a heating process on a semiconductor substrate by absorbing light energy irradiated from a laser through a light absorbing portion arranged with respect to a support chuck and transmitting the absorbed light energy to the semiconductor substrate through the support chuck. According to an embodiment of the present disclosure, by performing a heating process on a semiconductor substrate using a laser facility, a target temperature for performing a semiconductor manufacturing process can be reached in a relatively short time compared to a chuck heating method using a heat source or a tube through which a fluid flows embedded inside a chuck that has been used in the past.

[0045] In addition, the substrate processing system (10) according to an embodiment of the present disclosure can perform a heating process on a semiconductor substrate by using light energy absorbed through a light absorbing portion to which a solution for increasing light absorption efficiency is applied. Specifically, the light absorbing portion according to an embodiment of the present disclosure can have at least one of texturing, anti-reflective coating, and application of a thermal interface material applied. According to an embodiment of the present disclosure, by using the light absorbing portion to which the solution for increasing light absorption efficiency is applied, the amount of light energy absorbed per unit time can be increased, and a phenomenon in which the bonding strength between the support and the light absorbing portion is reduced can be prevented.

[0046] Meanwhile, in FIG. 1, the substrate processing system (10) is illustrated as including one substrate processing device (110) and an electronic device (120), but this is only one embodiment according to the present disclosure and does not limit the form of the substrate processing system (10) according to the present disclosure. Specifically, in some embodiments, the substrate processing system (10) may include a plurality of substrate processing devices (110) and at least one electronic device (120). When the substrate processing system (10) includes a plurality of substrate processing devices (110) and one electronic device (120), the plurality of substrate processing devices (110) may be controlled by one electronic device (120), and when the substrate processing system (10) includes a plurality of substrate processing devices (110) and a plurality of electronic devices (120), each of the plurality of substrate processing devices (110) may be controlled by an electronic device (120) corresponding to each of the plurality of substrate processing devices (110).

[0047] FIG. 2 is a cross-sectional view of a substrate processing device (200) according to one embodiment of the present disclosure.

[0048] The substrate processing device (200) illustrated in FIG. 2 may correspond to the substrate processing device (110, see FIG. 1) illustrated in FIG. 1 described above, and referring to FIG. 2, the substrate processing device (200) according to an embodiment of the present disclosure may include a support member (210), a plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5), and a plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5).

[0049] In an embodiment according to the present disclosure, the support chuck (210) can support a substrate (SUB) that is a target of a semiconductor process performed by the substrate processing device (200). The substrate (SUB) can be placed on a first surface of the support chuck (210), and when a substrate (SUB) supplied from the outside is placed on the first surface of the support chuck (210), the substrate processing device (200) can perform a heating process procedure for the substrate (SUB). The support (210) can be positioned apart from the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5), and in some embodiments, the distance between the support (210) and the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5) can be adjusted by the control of the electronic device (120, see FIG. 1).

[0050] In an embodiment, a plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5) may be arranged on a second surface of the support chuck (210) that is parallel to a first surface of the support chuck (210) on which the substrate (SUB) is arranged. Alternatively, a plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5) may be accommodated or inserted in each of a plurality of grooves or a plurality of recesses formed in the support chuck (210). In this case, one side of each of the plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5) may be arranged to form a substantially flat surface with one side of the support member (210), and the flat surface formed by one side of the support member (210) and one side of each of the plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5) may be referred to as a second side of the support member (210), and the second side of the support member (210) may be parallel to the first side on which the substrate (SUB) is arranged. The arrangement form of the plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5) according to the embodiment of the present disclosure will be described in detail with reference to FIG. 8 to be described later.

[0051] In an embodiment, the electronic device (120) can control at least one of the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5) to irradiate laser light to at least some of the plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5). Each of the plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5) can absorb laser light energy irradiated from at least one of the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5), and the substrate processing device (200) can perform a heating process on the semiconductor substrate based on the light energy absorbed from the plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5). In an embodiment, light energy absorbed from a plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5) can be transferred in the form of heat energy from a second surface of the support chuck (210) on which the plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5) are arranged to a first surface of the support chuck (210) that supports the substrate (SUB), and the substrate (SUB) on the support chuck (210) can be heated based on the heat energy transferred to the first surface of the support chuck (210).

[0052] Meanwhile, although not shown, in some embodiments of the present disclosure, a plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5) may be arranged on a plate arranged parallel to the support chuck (210), or may be accommodated or inserted into each of a plurality of grooves or a plurality of recesses formed in the plate. The light emitting portions of each of the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5) may be arranged to form a plane with one side of the plate, and the plane formed by the light emitting portions and one side of the plate may be parallel to a second side of the support chuck (210) on which the plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5) are arranged.

[0053] Meanwhile, although only the first to fifth lasers (230_1, 230_2, 230_3, 230_4, 230_5) are illustrated in the cross-sectional view of the substrate processing device (200) illustrated in FIG. 2, this merely illustrates a cross-section of the substrate processing device (200) according to an embodiment of the present disclosure, and does not limit the configuration of the substrate processing device (200) according to the embodiment of the present disclosure. According to the embodiment of the present disclosure, the number of lasers included in the substrate processing device (200) may be determined according to the characteristics of the semiconductor manufacturing process performed in the substrate processing device (200) and the specifications of the lasers. In addition, although only the first to fifth light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5) are illustrated in the cross-sectional view of the substrate processing device (200) illustrated in FIG. 2, this merely illustrates a cross-section of the substrate processing device (200) according to an embodiment of the present disclosure, and does not limit the configuration of the substrate processing device (200) according to the embodiment of the present disclosure. According to the embodiment of the present disclosure, the number of light absorbing portions included in the substrate processing device (200) may be determined according to the characteristics of the semiconductor manufacturing process performed in the substrate processing device (200), the specifications of the laser, and the number of lasers.

[0054] Figure 3 is a drawing showing a light absorbing part composed of a silicon absorbing element.

[0055] In FIG. 3, the support (310) can correspond to the support (210, see FIG. 2) of FIG. 2 described above, the light absorbing portion (320) can correspond to any one of the first to fifth light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5) of FIG. 2 described above, and the laser (330) can correspond to any one of the first to fifth lasers (230_1, 230_2, 230_3, 230_4, 230_5) of FIG. 2 described above.

[0056] Referring to (a) of FIG. 3, a light absorbing portion (320) for absorbing light energy irradiated from a laser (330) may be bonded to one surface of a support member (310). In an embodiment, a portion of the light energy irradiated to the light absorbing portion (320) may be absorbed by the light absorbing portion (320), and a portion of the light energy irradiated to the light absorbing portion (320) may be reflected by the light absorbing portion (320). For example, when the light absorbing portion (320) is formed of a silicon absorbing element, about 60% of the light energy irradiated to the light absorbing portion (320) may be absorbed, and about 35% of the light energy irradiated to the light absorbing portion (320) may be reflected. The light energy absorbed through the light absorbing portion (320) may be transmitted to the support member (310) in the form of heat energy.

[0057] Meanwhile, referring to (b) of FIG. 3, as the heating process by the laser (330) is performed, a gap (GAP) may be formed between the support (310) and the light absorbing portion (320) due to different thermal expansion coefficients of the support (310) and the light absorbing portion (320), and accordingly, a phenomenon of a decrease in the bonding force between the support (310) and the light absorbing portion (320) may occur, so that the heat transfer efficiency compared to the light output of the laser (330) may decrease, affecting the temperature rise, and a phenomenon of a decrease in the temperature uniformity of the support (310) may occur. In order to solve this, the present disclosure provides a solution for increasing the light absorption efficiency of the light absorbing portion (320) and preventing the formation of a gap (GAP) due to heating by the laser (330), and specific details will be described in detail with reference to FIGS. 4a to 7 to be described later.

[0058] FIG. 4a is a drawing illustrating a light absorbing portion (420) to which texturing is applied according to one embodiment of the present disclosure.

[0059] The support member (410) illustrated in FIG. 4a may correspond to the support member (210, see FIG. 2) of FIG. 2 described above, and the light absorbing member (420) may correspond to any one of the first to fifth light absorbing members (220_1, 220_2, 220_3, 220_4, 220_5) of FIG. 2 described above. Referring to FIG. 4a, a texturing process may be applied to the light absorbing member (420) in order to increase the absorption efficiency of light energy irradiated from a laser. Specifically, a first surface of the light absorbing member (420) may be bonded to the support member (410), and a second surface of the light absorbing member (420) facing the first surface of the light absorbing member (420) may have its surface modified by the texturing process. In some embodiments, the texturing process for one side of the light absorbing portion (420) may include a chemical etching process, and the surface modification of the second side of the light absorbing portion (420) may be changed by the chemical etching process.

[0060] In an embodiment, the shape of the second surface of the light absorbing portion (420) that is changed by the texturing process may be determined based on information on the material properties of the light absorbing portion (420) and information on the wavelength of laser light irradiated to the light absorbing portion (420), and may be determined as a shape that can maximize absorption of the laser light irradiated to the light absorbing portion (420). For example, the second surface of the light absorbing portion (420) may be formed to have a surface roughness or waviness that can maximize absorption of the laser light irradiated to the light absorbing portion (420).

[0061] Figure 4b is a drawing for comparing a light absorbing part composed of a silicon absorbing element and a light absorbing part with texture applied.

[0062] Referring to (a) of FIG. 4b, in the case of a light absorbing portion (420a) to which no texturing is applied, only a portion (TL) of the incident light energy (IL) may be absorbed, and a portion (RL) of the incident light energy (IL) may be reflected. Specifically, when the light absorbing portion (420a) to which no texturing is applied is a silicon absorbing element, about 60% of the incident light energy (IL) may be absorbed, and about 35% of the incident light energy (IL) may be reflected.

[0063] Meanwhile, referring to (b) of FIG. 4B, the light absorbing portion (420b) to which texture is applied can absorb a portion (TL1) of the incident light energy (IL), reflect a portion (RL1) of the incident light energy (IL), and absorb a portion of the reflected light energy (RL1) and reflect a portion (RL2). That is, even if the same amount of light energy (IL) is irradiated, the light absorbing portion (420b) to which texture is applied can absorb a greater amount of light energy depending on the surface modification of the light absorbing portion (420b) to which texture is applied, and the light absorbing portion (420b) to which texture is applied can absorb about 80 to 85% of the incident light energy (IL) and reflect less than about 15% of the incident light energy (IL).

[0064] FIG. 5 is a drawing illustrating a light absorbing portion (520) to which a light reflective coating is applied according to one embodiment of the present disclosure.

[0065] The support member (510) illustrated in FIG. 5 may correspond to the support member (210, see FIG. 2) of FIG. 2 described above. According to one embodiment of the present disclosure, an anti-reflective coating layer (ARC) may be formed on a light absorbing portion (520) disposed on the support member (510). In the embodiment, the anti-reflective coating layer (ARC) may be formed on a first surface of the light absorbing portion (520) exposed to laser light, and may refer to a thin film layer for reducing reflection of laser light irradiated on the light absorbing portion (520) and increasing light transmittance. In the embodiment, the anti-reflective coating layer (ARC) may be formed by an inorganic deposition process, and a second surface opposite to the first surface of the light absorbing portion (520) may be disposed on the support member (510).

[0066] The combination of the light reflective coating layer (ARC) and the light absorbing portion (520) illustrated in FIG. 5 may correspond to at least one of the plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5, see FIG. 2) of FIG. 2 described above. When the combination of the light reflective coating layer (ARC) and the light absorbing portion (520) illustrated in FIG. 5 is disposed with respect to the support (510), the reflectivity of the laser light irradiated to the light absorbing portion (520) can be reduced by the light reflective coating layer (ARC). As a specific example, when the light reflective coating layer (ARC) is formed, the reflected laser light among the laser light irradiated to the light absorbing portion (520) can be reduced to less than 1%, and thus, more than 90% of the laser light irradiated to the light absorbing portion (520) can be absorbed by the light absorbing portion (520). That is, when the combination of the light reflective coating layer (ARC) and the light absorbing portion (520) illustrated in FIG. 5 is placed with respect to the support (510), the degree of reflection of laser light irradiated to the light absorbing portion (520) by the light reflective coating layer (ARC) can be reduced, and accordingly, the amount of light energy absorbed by the light absorbing portion (520) can be increased.

[0067] FIG. 6 is a drawing showing a light absorbing portion (620) to which a thermal interface material (TIM) is applied according to one embodiment of the present disclosure.

[0068] The support member (610) illustrated in FIG. 6 may correspond to the support member (210, see FIG. 2) of FIG. 2 described above. According to one embodiment of the present disclosure, a thermal interface material (TIM) may be applied to a light absorbing member (620) positioned relative to the support member (610). Specifically, the thermal interface material (TIM) may be applied to a first surface of the light absorbing member (620) adjacent to the support member (610), and a second surface of the light absorbing member (620) opposite to the first surface may be exposed to laser light. In the embodiment, the thermal interface material (TIM) may improve thermal conductivity when light energy absorbed through the light absorbing member (620) is transferred to the support member (610) in the form of heat energy.

[0069] The combination of the light absorbing portion (620) and the heat transfer material (TIM) illustrated in FIG. 6 may correspond to at least one of the plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5, see FIG. 2) of FIG. 2 described above. When the combination of the light absorbing portion (620) and the heat transfer material (TIM) illustrated in FIG. 6 is arranged with respect to the support member (610), a greater amount of heat energy can be transferred to the support member (610) even if the same amount of light energy is absorbed from the light absorbing portion (620).

[0070] FIG. 7 is a drawing illustrating various shapes of a light absorbing portion that can be formed according to an embodiment of the present disclosure.

[0071] Referring to (a) of FIG. 7, texturing may be applied to the light absorbing portion as described through FIGS. 4a and 4b described above according to an embodiment of the present disclosure, and an anti-reflective coating layer (ARC) may be formed on the light absorbing portion (720a) on which surface modification by texturing has been formed as described through FIG. 5 described above. In the embodiment, the anti-reflective coating layer (ARC) may be formed on the first surface exposed to laser light of the light absorbing portion (720a) on which surface modification by texturing has been formed.

[0072] The combination of the light absorbing portion (720a) formed with surface modification by texturing and the light reflective coating layer (ARC) can correspond to at least one of the plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5, see FIG. 2) described in FIG. 2 described above, and the second side of the light absorbing portion (720a) formed with surface modification by texturing can be arranged with respect to the support (710). In the case of FIG. 7 (a), the degree of reflection of laser light primarily irradiated to the light absorbing portion can be reduced by the light reflective coating layer (ARC), and the amount of light energy secondarily absorbed by the light absorbing portion (720a) formed with surface modification by texturing can be increased, thereby improving the light absorption efficiency of the light absorbing portion.

[0073] Referring to (b) of FIG. 7, texturing may be applied to the light absorbing portion as described through FIGS. 4a and 4b described above according to another embodiment of the present disclosure, and a thermal interface material (TIM) may be applied to the light absorbing portion (720b) ​​on which surface modification by texturing is formed as described through FIG. 6 described above. In the embodiment, the thermal interface material (TIM) may be applied to the first surface of the light absorbing portion (720b) ​​on which surface modification by texturing is formed, wherein the first surface of the light absorbing portion (720b) ​​on which surface modification by texturing is formed may mean a surface adjacent to the support (710). Meanwhile, the second surface of the light absorbing portion (720b) ​​on which surface modification by texturing is formed may be exposed to laser light.

[0074] The combination of the light absorbing portion (720b) ​​formed with surface modification by texturing and the heat transfer material (TIM) can correspond to at least one of the plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5) described in the above-described FIG. 2. In the case of FIG. 7 (b), the amount of light energy primarily absorbed by the light absorbing portion (720b) ​​formed with surface modification by texturing can be increased, and the amount of heat energy secondarily transferred to the support (710) by the heat transfer material (TIM) can be increased, thereby improving the light absorption efficiency of the light absorbing portion.

[0075] Referring to (c) of FIG. 7, according to another embodiment of the present disclosure, an optical reflective coating layer (ARC) may be formed on the light absorbing portion (720c) as described with reference to FIG. 5, and a thermal transfer material (TIM) may be applied as described with reference to FIG. 6. In the embodiment, the optical reflective coating layer (ARC) may be formed on the first surface of the light absorbing portion (720c) exposed to laser light, and a thermal transfer material (TIM) may be applied on the second surface of the light absorbing portion (720c) adjacent to the support member (710).

[0076] The combination of the light reflective coating layer (ARC), the light absorbing portion (720c), and the heat transfer material (TIM) can correspond to at least one of the plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5) described in the above-described FIG. 2. In the case of FIG. 7 (c), the degree of reflection of laser light irradiated to the light absorbing portion can be primarily reduced by the light reflective coating layer (ARC), and the amount of heat energy transferred to the support (710) can secondarily be increased by the heat transfer material (TIM), thereby improving the light absorption efficiency of the light absorbing portion.

[0077] Referring to (d) of FIG. 7, texturing may be applied to the light absorbing portion as described through FIGS. 4a and 4b described above according to another embodiment of the present disclosure, an optical reflective coating layer (ARC) may be formed on the light absorbing portion (720d) on which surface modification by texturing has been formed as described through FIG. 5 described above, and a thermal interface material (TIM) may be applied as described through FIG. 6 described above. In the embodiment, the optical reflective coating layer (ARC) may be formed on the first surface exposed to laser light of the light absorbing portion (720d) on which surface modification by texturing has been formed. Meanwhile, the thermal interface material (TIM) may be applied on the second surface of the light absorbing portion (720d) on which surface modification by texturing has been formed, wherein the second surface of the light absorbing portion (720d) on which surface modification by texturing has been formed may mean a surface adjacent to the support member (710).

[0078] The combination of the light reflective coating layer (ARC), the light absorbing portion (720d) formed with surface modification by texturing, and the heat transfer material (TIM) can correspond to at least one of the plurality of light absorbing portions (220_1, 220_2, 220_3, 220_4, 220_5) described in the above-described FIG. 2. In the case of FIG. 7 (d), the degree of reflection of laser light irradiated to the light absorbing portion can be reduced primarily by the light reflective coating layer (ARC), the amount of light energy absorbed secondarily by the light absorbing portion (720d) formed with surface modification by texturing can be increased, and the amount of heat energy transferred to the support (710) can be increased thirdly by the heat transfer material (TIM), thereby improving the light absorption efficiency of the light absorbing portion.

[0079] FIG. 8 is a drawing for explaining the arrangement structure of a light absorbing portion according to one embodiment of the present disclosure.

[0080] The support member (810) illustrated in FIG. 8 may correspond to the support member (210, see FIG. 2) illustrated in FIG. 2 described above, and at least some of the plurality of light absorbing members (820_1, 820_2, …, 820_19) illustrated in FIG. 8 may correspond to the plurality of light absorbing members (220_1, 220_2, 220_3, 220_4, 220_5) illustrated in FIG. 2 described above.

[0081] In an embodiment, each of the plurality of light absorbing portions (820_1, 820_2, …, 820_19) may include a light absorbing material that absorbs laser light irradiated from a laser. In addition, each of the plurality of light absorbing portions (820_1, 820_2, …, 820_19) may be applied with at least one of texturing, light reflective coating, and application of heat transfer material described through FIGS. 4 to 7 described above. In an embodiment, each of the plurality of light absorbing portions (820_1, 820_2, …, 820_19) may be applied with the same solution to increase light absorption efficiency. In other words, a plurality of light absorbing portions (820_1, 820_2, …, 820_19) to which texturing is applied may be arranged on one surface of the support (810), a plurality of light absorbing portions (820_1, 820_2, …, 820_19) to which a light reflective coating is applied may be arranged on one surface of the support (810), or a plurality of light absorbing portions (820_1, 820_2, …, 820_19) to which a heat transfer material is applied may be arranged on one surface of the support (810). Alternatively, a plurality of light absorbing portions (820_1, 820_2, …, 820_19) to which at least two processes of texturing, light reflective coating, and heat transfer material application are performed may be arranged on one surface of the support (810). Meanwhile, in some embodiments, each of the plurality of light absorbing portions (820_1, 820_2, …, 820_19) may undergo a different process. For example, the first light absorbing portion (820_1) may be subjected to a texturing process, the second to seventh light absorbing portions (820_2, 820_3, …, 820_7) may be subjected to a light reflective coating, and the eighth to nineteenth light absorbing portions (820_8, 820_9, …, 820_19) may be subjected to a heat transfer material.

[0082] In FIG. 8, each of the plurality of light absorbing portions (820_1, 820_2, …, 820_19) is illustrated as being formed in a circular shape, but this merely illustrates a shape according to an embodiment of the present disclosure, and does not limit the shape of each of the plurality of light absorbing portions (820_1, 820_2, …, 820_19) formed according to the embodiment of the present disclosure. According to the embodiment of the present disclosure, each of the plurality of light absorbing portions (820_1, 820_2, …, 820_19) may be formed in any shape for absorbing laser light. In addition, in FIG. 8, the second to nineteenth light absorbing portions (820_2, 820_3, …, 820_19) are illustrated as being radially arranged with the first light absorbing portion (820_1) as the center, but this merely illustrates an arrangement according to an embodiment of the present disclosure, and does not limit the arrangement of the plurality of light absorbing portions (820_1, 820_2, …, 820_19) according to the embodiment of the present disclosure. According to an embodiment of the present disclosure, the plurality of light absorbing portions (820_1, 820_2, …, 820_19) may be arranged in any shape for absorbing laser light, and in order to increase laser light absorption efficiency, the area of ​​the plurality of light absorbing portions (820_1, 820_2, …, 820_19) exposed to laser light may occupy 50% or more of the area of ​​one side of the support (810).

[0083] FIG. 9 is a drawing illustrating the configuration of an electronic device (900) according to an embodiment of the present disclosure.

[0084] The electronic device (900) illustrated in FIG. 9 may correspond to the electronic device (120, see FIG. 1) of FIG. 1 described above. Referring to FIG. 9, the electronic device (900) may include a control unit (910), a temperature measurement unit (920), a laser output wavelength control unit (930), a laser output direction control unit (940), and a distance adjustment unit (950). In FIG. 9, the control unit (910), the temperature measurement unit (920), the laser output wavelength control unit (930), the laser output direction control unit (940), and the distance adjustment unit (950) are illustrated as physically separate configurations, but this is only for convenience of explanation and does not limit the configuration of the electronic device (900) according to the embodiment of the present disclosure. The control unit (910), temperature measurement unit (920), laser output wavelength control unit (930), laser output direction control unit (940), and distance control unit (950) included in the electronic device (900) according to the embodiment of the present disclosure may mean logically separated configurations.

[0085] In an embodiment, the control unit (910) may perform a process for temperature control of the substrate processing device (110, see FIG. 1) based on a program (or algorithm) stored in the memory of the electronic device (900), and control a configuration included in the substrate processing device (110). Specifically, the control unit (910) may check whether the substrate processing device (110) is driven, may check whether a substrate (SUB, see FIG. 2) is placed on a support (210, see FIG. 2) of the substrate processing device (110), and may perform a process for temperature control of the substrate processing device (110) based on semiconductor process recipe information stored in the memory of the electronic device (900). In performing the process for temperature control, the control unit (910) may control at least one of a temperature measurement unit (920), a laser output wavelength control unit (930), a laser output direction control unit (940), and a distance control unit (950).

[0086] In an embodiment, the temperature measuring unit (920) may obtain temperature information for at least one of the support chuck (210) and the substrate (SUB) placed on the support chuck (210), and provide the obtained temperature information to the control unit (910). In some embodiments, the substrate processing device (110) may include at least one temperature sensor for measuring the temperature of at least one of the support chuck (210) and the substrate (SUB), and temperature information measured by the at least one temperature sensor may be provided to the temperature measuring unit (920).

[0087] In an embodiment, the laser output wavelength control unit (930) can control the output wavelength of at least one of the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5, see FIG. 2). Specifically, the laser output wavelength control unit (930) can identify a target temperature for performing a semiconductor process on a substrate (SUB) based on semiconductor process recipe information, and can identify the output wavelength of each of the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5) for the temperature of the substrate (SUB) to reach the target temperature. The laser output wavelength control unit (930) can control each of the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5) to irradiate light energy of a confirmed output wavelength to each of the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5).

[0088] In an embodiment, the laser output direction control unit (940) can control the output direction of at least one of the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5). Specifically, the laser output direction control unit (940) can identify a target temperature for performing a semiconductor process on a substrate (SUB) based on semiconductor process recipe information, and can identify an optimal output direction of each of the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5) for the temperature of the substrate (SUB) to reach the target temperature. The laser output direction control unit (940) can control each of the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5) to irradiate light energy corresponding to the output direction identified for each of the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5).

[0089] In some embodiments, the distance control unit (950) can adjust the separation distance between the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5) and the support chuck (210). The separation distance between the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5) and the support chuck (210) can be determined based on semiconductor process recipe information, and the distance control unit (950) can move at least some of the plurality of lasers (230_1, 230_2, 230_3, 230_4, 230_5) and the support chuck (210) in response to the determined separation distance.

[0090] FIG. 10 is a block diagram illustrating an electronic device (1000) according to an embodiment of the present disclosure.

[0091] The electronic device (1000) illustrated in FIG. 10 may correspond to the electronic device (120, see FIG. 1) of FIG. 1 described above, and referring to FIG. 10, the electronic device (1000) according to an embodiment of the present disclosure may include a transceiver (1010), a processor (1020), and a memory (1030).

[0092] The electronic device (1000) is connected to an external device through a transceiver (1010) and can exchange data (or signals).

[0093] The processor (1020) may perform an operation performed by at least one of the devices described through FIGS. 1 to 9 described above, or may perform at least one method described through FIGS. 1 to 9 described above. In addition, the processor (1020) may execute a program for performing an operation performed by at least one of the devices described through FIGS. 1 to 9 described above or at least one method described through FIGS. 1 to 9 described above, and may process information to perform an operation performed by at least one of the devices described through FIGS. 1 to 9 described above or at least one method described through FIGS. 1 to 9 described above, and control a substrate processing device (110, see FIG. 1) based on the processed information.

[0094] The memory (1030) may include at least one of volatile memory and non-volatile memory, and may store code of a program executed by the processor (1020).

[0095] Meanwhile, the embodiments disclosed in this specification may be implemented in the form of a recording medium that stores computer-executable instructions. The instructions may be stored in the form of program code, and when executed by a processor, may generate program modules to perform the operations of the disclosed embodiments. The recording medium may be implemented as a computer-readable recording medium. The computer-readable recording medium may include any type of recording medium that stores instructions that can be deciphered by a computer. Examples thereof include ROM, RAM, magnetic tape, magnetic disk, flash memory, and optical data storage devices.

[0096] The above-described embodiments are specific examples for implementing the present disclosure. The present disclosure will encompass not only the above-described embodiments, but also embodiments that can be simply designed or easily modified. Furthermore, the present disclosure will encompass techniques that can be easily modified and implemented using the above-described embodiments. Therefore, the scope of the present disclosure should not be limited to the above-described embodiments, but should be defined not only by the claims set forth below, but also by equivalents of the claims of the present disclosure.

Claims

1. A support that supports a semiconductor substrate; A plurality of light absorbing parts arranged on one side of the support; and Including a plurality of lasers that irradiate laser light to at least some of the plurality of light absorbing portions, A substrate processing device in which one side of each of the plurality of light absorbing portions exposed to the laser light has surface modification formed by texturing.

2. In paragraph 1, The above surface modification is a substrate treatment device formed by a chemical etching process.

3. In paragraph 1, A substrate processing device in which a thermal interface material is applied to one surface of each of the plurality of light absorbing portions adjacent to the support member.

4. In paragraph 1, A substrate processing device in which an anti-reflective coating layer is formed on one surface of each of the plurality of light absorbing portions exposed to the laser light.

5. In paragraph 4, A substrate processing device in which the above light reflecting coating layer is formed by an inorganic deposition process.

6. In paragraph 4, A substrate processing device in which a thermal interface material is applied to one surface of each of the plurality of light absorbing portions adjacent to the support member.

7. In paragraph 1, A substrate processing device in which the area of ​​the plurality of light absorbing portions exposed to the laser light is 50% or more of the area of ​​one side of the support.

8. In paragraph 1, A substrate processing device in which the laser output wavelength of each of the plurality of lasers is determined in a range of 700 nm to 1000 nm.

9. Support for supporting the semiconductor substrate; A plurality of light absorbing parts arranged on one side of the support; and Including a plurality of lasers that irradiate laser light to at least some of the plurality of light absorbing portions, A substrate processing device in which an anti-reflective coating layer is formed on one surface of each of the plurality of light absorbing portions exposed to the laser light.

10. Support for supporting the semiconductor substrate; A plurality of light absorbing parts arranged on one side of the support; and Including a plurality of lasers that irradiate laser light to at least some of the plurality of light absorbing portions, A substrate processing device in which a thermal interface material is applied to one surface of each of the plurality of light absorbing portions adjacent to the support member.

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