Standard sheet and manufacturing method therefor, semiconductor material defect correction method, and measurement device correction method

Abstract

The present invention relates to the field of semiconductors, and provides a standard sheet and a manufacturing method therefor, a semiconductor material defect correction method, and a measurement device correction method. The semiconductor material defect correction method comprises: providing a standard sheet, and acquiring scattering signal intensities corresponding to standard particles of each size, so as to establish a functional relationship between the scattering signal intensities and the particle sizes; acquiring a scattering signal intensity of a defect particle of a semiconductor material, and acquiring a corrected size of the defect particle on the basis of the functional relationship; and acquiring a target size of the defect particle of the semiconductor material. In the present invention, a standard sheet having standard particles is manufactured, a functional relationship between scattering signal intensities and particle sizes is then established, and finally, a scattering signal intensity of a defect particle of a semiconductor material is acquired, and a corrected size of the defect particle is acquired on the basis of the functional relationship. Thus, the target size is compared with the corrected size for correction, thereby improving the accuracy of defect detection.

Description

Standard wafer and manufacturing method thereof, semiconductor material defect correction method and correction method of measuring equipment TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a standard wafer and manufacturing method thereof, semiconductor material defect correction method and correction method of measuring equipment. BACKGROUND

[0002] In the process of manufacturing semiconductor silicon wafer, the quality of single crystal semiconductor material determines the quality of silicon wafer, so it is extremely important to improve the quality of single crystal semiconductor material, and a lot of original defects such as crystal originated particle (COP) and bulk micro defect (BMD) are generated in the process of crystal pulling. Oxygen impurities enter the crystal bar in the process of crystal pulling, and generally exist in the gap of silicon lattice. The oxygen precipitates and induced defects after high temperature oxidation treatment are called bulk micro defect (BMD), which is one of the most important defects in the preparation of single crystal silicon wafer by the Czochralski method, and is one of the important indicators for evaluating the quality of wafer. The density of BMD has an important influence on the yield of integrated circuits.

[0003] In order to ensure the quality of wafer, it is necessary to analyze the defect distribution in the wafer, detect the defects of samples taken from different parts of each single crystal semiconductor material, monitor the density, size and distribution of defects in the wafer, find out the best single crystal process condition, reduce the growth defects of single crystal semiconductor material, and improve the quality of wafer.

[0004] LSTD test is a common method for testing COP and BMD distribution. After processing by laser scanning tomography, the crystal defects are observed by transmission electron microscope (TEM), and the size of the measured defects is tens of nanometers. However, when LSTD detects the defects of semiconductor material, the size of the defects is not calibrated, which reduces the accuracy of defect detection.

[0005] It should be noted that the information disclosed in the background section of the present application is only intended to deepen the understanding of the general background of the present application, and should not be regarded as acknowledging or implying in any form that the information constitutes prior art known to those skilled in the art. SUMMARY

[0006] The present application aims to provide a standard wafer and manufacturing method thereof, semiconductor material defect correction method and correction method of measuring equipment, to solve the problem that the size of the defects is not calibrated when LSTD detects the defects of semiconductor material, which reduces the accuracy of defect detection.

[0007] To solve the above technical problems, the present application provides a standard wafer for correcting the defect size of semiconductor material, comprising:

[0008] a main body, which is an amorphous solid;

[0009] a plurality of standard particles, which are arranged in the main body, and the distance from any standard particle to the surface of the main body is greater than a preset size, and the refractive index of the amorphous solid is different from that of the standard particles.

[0010] Optionally, the sizes of the standard particles are the same, and the particle size range of the standard particles is 15nm-1000nm.

[0011] Optionally, the thickness of the main body is 600μm-1000μm, and the distribution density of the standard particles in the main body is E6-E10 / cm 3 .

[0012] Optionally, the ratio of the refractive index of the standard particles to that of the main body is greater than or equal to 1.2.

[0013] To solve the above technical problems, the present application also provides a standard wafer for correcting the defect size of semiconductor material, comprising:

[0014] a main body, which is an amorphous solid;

[0015] a plurality of standard particles, which are arranged in the main body, and the distance from any standard particle to the surface of the main body is greater than a preset size, and the refractive index of the amorphous solid is different from that of the standard particles.

[0016] Optionally, the sizes of the standard particles in each layer are the same, and the sizes of the standard particles distributed in different layers are different.

[0017] Optionally, the particle size range of the standard particles is 15nm-1000nm.

[0018] Optionally, the thickness of the main body is 600μm-1000μm, and the distribution density of the standard particles in the main body is E6-E10 / cm 3 .

[0019] Optionally, the layer spacing is not less than 10μm

[0020] Optionally, the ratio of the refractive index of the standard particles to that of the main body is greater than or equal to 1.2.

[0021] The present application also provides a manufacturing method of the above standard wafer, comprising:

[0022] Forming standard particles in the amorphous solid to make the standard piece, wherein the refractive index of the standard particles is different from the refractive index of the amorphous solid, and the standard particles are arranged in a region with a preset size from the surface of the amorphous solid.

[0023] Optionally, the forming standard particles in the amorphous solid to make the standard piece comprises:

[0024] Providing a plurality of amorphous solids, and injecting the same size of standard particles in each amorphous solid to make a plurality of standard pieces.

[0025] Optionally, the forming standard particles in the amorphous solid to make the standard piece comprises:

[0026] Providing an amorphous solid comprising a plurality of amorphous solid layers, and injecting different sizes of standard particles layer by layer in the plurality of amorphous solid layers to make a standard piece, wherein the size of the standard particles in each layer of the amorphous solid is the same.

[0027] Optionally, the amorphous solid layer with a set thickness is formed by casting.

[0028] Optionally, the amorphous solid layer is formed by a vapor deposition method.

[0029] Optionally, the particle size of the standard particles ranges from 15 nm to 1000 nm, the thickness of the amorphous solid ranges from 600 μm to 1000 μm, and the density of the standard particles distributed in the amorphous solid ranges from E6 to E10 per cm 3 .

[0030] The application also provides a semiconductor material defect correction method, comprising:

[0031] Providing a group of standard pieces, and obtaining the scattering signal intensity corresponding to each size of standard particles to establish a function relationship between the scattering signal intensity and the particle size;

[0032] Obtaining the scattering signal intensity of the defect of the semiconductor material, and obtaining the defect size corresponding to the scattering signal intensity based on the function relationship to obtain the corrected size of the defect;

[0033] Obtaining the target size of the defect of the semiconductor material;

[0034] Comparing the target size with the corrected size to correct the size of the defect.

[0035] Optionally, the function relationship between the scattering signal intensity and the particle size is y=ax b , wherein a is greater than 0, a≠1, b is greater than 0, and the regression coefficient R 2≥ 0.85.

[0036] Optionally, the regression coefficient R 2 > 0.9.

[0037] Optionally, the semiconductor material defect correction method further comprises:

[0038] The position coordinates of the standard particles are defined to correct the position of the defects.

[0039] Optionally, the position coordinates are composed of the radial position of the standard particles in the main body part and the depth from the surface of the main body part.

[0040] The present application also provides a correction method of a measuring device, comprising:

[0041] A standard functional relationship between the corresponding scattering signal intensity and the particle size under a set input light intensity is provided.

[0042] The input set input light intensity of the device to be calibrated is obtained, and a to-be-calibrated functional relationship between the corresponding scattering signal intensity and the particle size is obtained.

[0043] The to-be-calibrated functional relationship is compared with the standard functional relationship, and the input light intensity is adjusted to make the two functional relationships consistent.

[0044] Compared with the prior art, the standard sheet and the manufacturing method thereof, the semiconductor material defect correction method and the correction method of the measuring device have the following advantages:

[0045] The present application provides a standard sheet with standard particles, and different sizes of standard particles are arranged in the main body part, or a plurality of main body parts are arranged, and one size of standard particles is arranged in each main body part, which is used to correct the defect size of the semiconductor material, so that the target size and the corrected size obtained by the LSTD test method can be compared and corrected, and the accuracy of defect detection is improved.

[0046] The semiconductor material defect correction method provided by the present application first provides the standard sheet provided by the present application, and then establishes a functional relationship between the scattering signal intensity and the particle size. Finally, the scattering signal intensity of the defect particle of the semiconductor material is obtained, and the corrected size of the defect particle is obtained based on the functional relationship. Therefore, the target size and the corrected size obtained by the LSTD test method can be compared and corrected, and the accuracy of defect detection is improved.

[0047] The application provides a calibration method of a measuring device, which comprises the following steps: establishing a standard function relationship between a scattering signal intensity and a particle size under a set input light intensity; inputting the set light intensity to the measuring device to be calibrated again to obtain a to-be-calibrated function relationship between the scattering signal intensity and the particle size; comparing the to-be-calibrated function relationship with the standard function relationship to determine whether the two function relationships change; and adjusting the input light intensity to make the two function relationships consistent when the two function relationships change. The calibration method can improve the measuring accuracy of the measuring device. BRIEF DESCRIPTION OF DRAWINGS

[0048] Fig. 1 is a structural schematic diagram of a standard sheet according to an embodiment of the application;

[0049] Fig. 2 is a structural schematic diagram of a standard sheet according to another embodiment of the application;

[0050] Fig. 3 is a structural schematic diagram of a standard sheet irradiated by a laser according to an embodiment of the application;

[0051] Fig. 4 is a flowchart of a semiconductor material defect calibration method according to an embodiment of the application;

[0052] Fig. 5 is a scattering signal intensity diagram corresponding to standard particles with different sizes according to an embodiment of the application;

[0053] Fig. 6 is a function relationship diagram between a scattering signal intensity and a particle size according to an embodiment of the application;

[0054] Fig. 7 is a flowchart of a calibration method of a measuring device according to an embodiment of the application;

[0055] In the drawings,

[0056] 100-glass sheet; 110-first region;

[0057] 120-second region; 130-third region;

[0058] 200-standard particle; 300-CCD camera. DETAILED DESCRIPTION

[0059] To make the objects, advantages and features of the present application more comprehensible, the standard wafer and its manufacturing method, and the semiconductor material defect correction method according to the present application will be further described below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the accompanying drawings are in a very simplified form and are not drawn to scale, and are only used to facilitate and clarify the purpose of illustrating the embodiments of the present application. It should be understood that the drawings of the specification do not necessarily show the specific structure of the present application, and the illustrative features used to illustrate some principles of the present application in the drawings of the specification will also be slightly simplified. The specific design features of the present application disclosed herein, such as specific sizes, directions, positions and shapes, will be determined in part by the specific application and use to be applied and used. In the following described embodiments, the same reference signs are sometimes used in different drawings to represent the same parts or parts with the same function, and the repeated description is omitted. In this specification, similar signs and letters are used to represent similar items, so once an item is defined in one drawing, it does not need to be further discussed in subsequent drawings.

[0060] In addition, the terms "first", "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise specifically limited.

[0061] In the description of the present application, the description of the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. In addition, the skilled person in the art can combine and combine the different embodiments or examples described in the specification and the features of the different embodiments or examples without contradiction.

[0062] As shown in FIG. 1, the present application discloses a standard wafer for correcting the detection of defect size of semiconductor material, comprising: a main body, which is an amorphous solid. A standard particle is arranged in the main body, the distance from any standard particle to the surface of the main body is greater than a predetermined size, and the refractive index of the amorphous solid and the standard particle is different.

[0063] The main body is an amorphous solid. The amorphous solid can be a glass sheet made of silicon dioxide, a ceramic made of silicon nitride, or other medium layers. In this embodiment, the amorphous solid is glass made of silicon dioxide. The main body can have a cylindrical shape, a cuboid shape, or other irregular cubic shapes, or any combination of the above shapes. In this embodiment, the main body has a cylindrical shape. The semiconductor material can be silicon, silicon carbide, or other materials. The thickness of the main body is 600 μm to 1000 μm. That is, the thickness of the glass sheet can be 600 μm, 700 μm, 800 μm, 900 μm, or 1000 μm, or any value within the range of 600 μm to 1000 μm.

[0064] The standard particles can be made of SiC or TiO2, or other materials, as long as they can avoid dissolving in the amorphous solid and can scatter in the amorphous solid when the standard sheet is irradiated with light. In this embodiment, the standard particles are made of SiC.

[0065] A plurality of standard particles are arranged in the main body, and each standard particle is located at a distance greater than 5 μm from the surface of the main body. The standard particles have the same size, and the particle size of the standard particles ranges from 15 nm to 1000 nm. The particle size of the standard particles is the linear size occupied by the standard particles in space. The particle size of the standard particles can be 15 nm, 200 nm, 500 nm, 800 nm, or 1000 nm, or any value within the range of 15 nm to 1000 nm. Optionally, the size of the standard particles 200 ranges from 15 nm to 200 nm. As shown in FIG. 1, three standard sheets with different standard particle sizes are formed, namely standard sheet (a), standard sheet (b), and standard sheet (c). In each standard sheet, the standard particles are arranged in the main body at a distance greater than 5 μm from the surface. That is, the distance from the surface of any standard particle to the surface of the main body is greater than 5 μm. As shown in standard sheet (a) in FIG. 1, the distance d1 from the standard particle 200 to the upper surface of the main body is greater than 5 μm, and the distance d2 from the standard particle 200 to the lower surface of the main body is also greater than 5 μm. It should be noted that the distance from any standard particle 200 to the surface of the main body is greater than 5 μm. The distribution density of the standard particles in the main body is E6 to E10 per cm 3 The ratio of the refractive index of the standard particles to the refractive index of the main body is greater than or equal to 1.2, to ensure that the standard particles 200 can scatter in the amorphous solid when the standard sheet is irradiated with light.

[0066] As shown in Fig. 2, the present application also discloses another standard wafer for calibrating the detection of defect size of semiconductor material, which comprises a main body part being an amorphous solid. A plurality of standard particles are arranged in layers in the main body part, the distance from any standard particle to the surface of the main body part is greater than a preset size, and the refractive index of the amorphous solid is different from that of the standard particles. The size of the standard particles in each layer is the same, and the size of the standard particles distributed in each layer is different. The particle size of the standard particles ranges from 15 nm to 1000 nm. The thickness of the main body part ranges from 600 μm to 1000 μm, and the density of the standard particles distributed in the main body part ranges from E6 to E10 per cm 3 The interval between layers is not less than 10 μm. The ratio of the refractive index of the standard particles to the refractive index of the main body part is greater than or equal to 1.2.

[0067] For example, the standard wafer shown in Fig. 2 is formed. In this embodiment, the main body part is taken as a glass wafer 100. The main body part comprises a first region 110, a second region 120 and a third region 130. The sum of the thicknesses of the first region 110, the second region 120 and the third region 130 ranges from 600 μm to 1000 μm. A plurality of standard particles of a first size are arranged in the first region 110. Similarly, a plurality of standard particles of a second size and a plurality of standard particles of a third size are arranged in the second region 120 and the third region 130, respectively. However, the first size, the second size and the third size are all different. Moreover, the interval between the standard particles arranged in the first region 110 and the standard particles arranged in the second region 120 (e.g. d6 in Fig. 2), or the interval between the standard particles arranged in the second region 120 and the standard particles arranged in the third region 130 (e.g. d3 in Fig. 2) are all greater than or equal to 10 μm. In addition, the distance d4 from the standard particles arranged in the third region 130 to the top of the main body part is greater than 5 μm. The distance d5 from the standard particles arranged in the first region 110 to the bottom of the main body part is greater than 5 μm.

[0068] It should be noted that the standard wafer shown in Fig. 2 is only one embodiment, and the standard wafer of other embodiments can comprise a plurality of regions. For example, the number of regions can be greater than or equal to 3. The sum of the thicknesses of the plurality of regions ranges from 600 μm to 1000 μm.

[0069] As shown in Fig. 1 and Fig. 2, the present application also discloses a method for manufacturing the standard wafer as described above, which comprises forming standard particles in an amorphous solid to manufacture the standard wafer. The ratio of the refractive index of the standard particles to the refractive index of the amorphous solid is greater than or equal to 1.2. The size of the standard particles ranges from 15 nm to 1000 nm. The standard particles are arranged in a region which is greater than 5 μm away from the surface of the amorphous solid. The density of the standard particles distributed in the amorphous solid ranges from E6 to E10 per cm.3 E6 to E10 per cm3 3 E6 to E10 per cm3

[0070] The following will be explained with the amorphous solid as the glass sheet 100 and the material of the standard particle 200 as SiC.

[0071] As one of the embodiments, as shown in Fig. 1, the standard sheet is made by forming the standard particles 200 of different sizes in the glass sheet 100. The method includes: providing a plurality of glass sheets 100, and injecting the standard particles 200 of the same size in each of the glass sheets 100 to make a plurality of standard sheets. That is, a plurality of glass sheets 100, such as a first glass sheet, a second glass sheet, and an Nth glass sheet, are provided, where N is an integer greater than 0. Then, the standard particles 200 of the same size are injected into the first glass sheet to make a standard sheet. Then, the standard particles 200 of the same size are injected into the second glass sheet to make a standard sheet. The sizes of the standard particles 200 in the first glass sheet and the second glass sheet are different. Then, the N standard sheets are made according to the above method. That is, three standard sheet structures shown in (a), (b), and (c) of Fig. 1 can be formed. Due to the optical characteristics, the accuracy can only be guaranteed from the two sides of the surface 5 μm. The distance between the standard particle 200 and the surface of the glass sheet 100 is greater than 5 μm. That is, in the three standard sheets shown in Fig. 1, the distances d1 and d2 between the standard particles 200 and the surface of the glass sheet 100 are both greater than 5 μm.

[0072] As another embodiment, as shown in FIG. 2, different sizes of standard particles 200 are formed in an amorphous solid to make a standard sheet, including: providing an amorphous solid, and injecting different sizes of standard particles 200 into the amorphous solid layer by layer to make a standard sheet. That is, a glass sheet 100 is provided, and different sizes of standard particles 200 are injected into the glass sheet 100 layer by layer to make a standard sheet, wherein the standard particles 200 in each layer of the glass sheet 100 are of the same size, and a structure as shown in FIG. 2 is formed. In the specific manufacturing process, first, the same size of standard particles 200 are scattered on the surface of a base layer (not shown in the figure), and then the surface of the base layer is cast with glass to form a first region 110. After the first region 110 solidifies, the first size of standard particles 200 are scattered on the surface of the first region 110. Then, the second region 120 is cast on the surface of the first region 110 with standard particles 200 by melting and casting the glass. After the second region solidifies, the second size of standard particles 200 are scattered on the surface of the second region 120. Again, the third region 130 is cast on the surface of the second region 120 with standard particles 200 by melting and casting the glass. The third size of standard particles 200 is continued to be set according to the above method until the thickness of the entire glass sheet 100 reaches 600 μm to 1000 μm, and a standard sheet is formed, i.e., a structure as shown in FIG. 2 is formed. In the standard sheet, there are the first region 110, the second region 120, and the third region 130. The distance d4 from the standard particles 200 to the upper surface of the glass sheet 100 and the distance d5 from the standard particles 200 to the lower surface of the glass sheet 100 are both greater than 5 microns. In addition, after the standard sheet is manufactured, the standard sheet can be polished by CMP grinding.

[0073] As another embodiment, as shown in FIG. 2, during the specific manufacturing process of the standard sheet as shown in FIG. 2, the following methods can also be used:

[0074] First, the same size standard particles 200 are scattered on the surface of the base layer, and then silicon dioxide is deposited on the surface of the base layer by vapor deposition to form a first region 110 as shown in FIG. 2. The first size standard particles 200 are scattered on the surface of the first region 110. Next, the second region 120 is deposited on the surface of the first region 110 with the standard particles 200 by vapor deposition. Then, the second size standard particles 200 are scattered on the surface of the second region 120. Again, the third region 130 is deposited on the surface of the second region 120 with the standard particles 200 by vapor deposition. The third size standard particles 200 are continued to be set according to the above method until the entire glass sheet 100 reaches a thickness of 600 μm to 1000 μm, and a standard sheet is formed, i.e., a structure as shown in FIG. 2 can be formed as an embodiment. In this embodiment, the glass sheet layer is deposited on the surface of the glass sheet 100 by chemical vapor deposition. For example, the glass sheet layer can be deposited by introducing SiCl4, and the specific reaction formula is: The flow rate of SiCl4introduction and the temperature are not specifically required, as long as silicon oxide can be grown.

[0075] The present application also discloses a semiconductor material defect correction method, and a specific embodiment of a semiconductor material defect correction method is disclosed with reference to FIGS. 1 to 6. The semiconductor material defect correction method comprises the following steps S11 to S14.

[0076] Step S11: providing a standard sheet provided with standard particles 200 of different sizes, obtaining the scattering signal intensity corresponding to each size of the standard particles 200 to establish a function relationship between the scattering signal intensity and the particle size.

[0077] Specifically, as shown in FIGS. 4 and 5, each standard sheet is irradiated by a laser according to the direction shown by arrow a in FIG. 3, and as shown in FIG. 6, the scattering signal intensity corresponding to each size of the standard particles 200 is obtained by a CCD camera 300, so that the function relationship between the scattering signal intensity and the particle size can be established. The function relationship between the scattering signal intensity and the particle size is:

[0078] y=ax b wherein a is greater than 0 and a≠1, b is greater than 0, and the regression coefficient R 2 ≥0.85. Alternatively, the regression coefficient R 2 >0.9.

[0079] Taking the above-made standard sheet as an example, one of the obtained function relationships is shown in FIG. 6, and the function relationship formula is y=11.56x 0.1667 . The regression coefficient R 2 of the function =1.

[0080] Step S12: Obtain the scattering signal intensity of the defect of the semiconductor material, and obtain the defect size corresponding to the scattering signal intensity based on the function relationship, to obtain the corrected size of the defect.

[0081] Specifically, as shown in FIGS. 4 to 6, the semiconductor material can be silicon (Si), germanium (Ge), gallium arsenide (GaAs), and indium phosphide (InP), etc. The scattering signal intensity of the defect particle of the semiconductor material is obtained by using a CCD camera. The function relationship y = 11.56x 0.1667 The curve shown in FIG. 6 is formed, and the scattering signal intensity is substituted into the function relationship, so that the corresponding particle size can be calculated, thereby obtaining the corrected size of the defect particle.

[0082] Step S13: Obtain the target size of the defect of the semiconductor material.

[0083] Specifically, as shown in FIG. 6, the target size of the defect particle of the semiconductor material is obtained by using the LSTD test method. The LSTD (Laser Scattering Tomography Defects) test is a technology for detecting defects in single crystal semiconductor materials. Taking a wafer made of silicon material as an example for illustration. The LSTD detection method is specifically operated as follows: along the straight line passing through the center of the wafer, the wafer is cut into two halves, and one half of the wafer is placed on a detection platform, an infrared light beam is irradiated onto the wafer section, the infrared light is scattered at the defect, and is captured by a CCD camera to form a defect micro-morphology map. The scattering light intensity and the defect size have a Rayleigh scattering relationship. This test is mainly used to identify and characterize the microstructure defects inside the single crystal silicon material. However, due to the attenuation of laser energy and other factors, there is an error in the detection. Therefore, it is necessary to correct the target size of the defect detected by the LSTD detection method.

[0084] Step S14: Compare the target size with the corrected size to correct the size of the defect.

[0085] Specifically, as shown in FIG. 6, the target size is compared with the corrected size to correct the size of the defect particle. Thus, the accuracy of the detection of the defect particle of the semiconductor material can be improved.

[0086] Further, the semiconductor material defect correction method further comprises defining the position coordinates of the standard particle to correct the position of the defect. The position coordinates are composed of the radial position of the standard particle in the main body and the depth from the surface of the main body.

[0087] Specifically, as shown in FIG. 2, the side where the laser is incident is defined as the upper surface of the standard wafer. Meanwhile, the center point of the upper surface (i.e., point A in FIG. 2) is defined as the origin. The coordinates of the origin are (0, 0). The coordinates of the standard particle are (X, Y), where X is the length of the standard particle at the radial position of the main body, and Y is the depth of the standard particle from the upper surface of the main body. For example, for the standard particle at point B in FIG. 2, the length of the standard particle at point B at the radial position of the main body is c1, and the depth of the standard particle at point B from the upper surface of the main body is c2. Therefore, the coordinates of the standard particle at point B are (c1, c2). Through the coordinates of the standard particle, the position of the defect in the semiconductor material can be corrected. The range of X can be 0-149 microns. The range of Y can be 5 microns-800 microns.

[0088] As shown in FIG. 7, the present application also discloses a correction method of a measuring device, comprising the following steps S21-S23.

[0089] Step S21: providing a standard function relationship between the scattering signal intensity and the particle size corresponding to a set input light intensity.

[0090] Step S22: inputting the set input light intensity to the device to be calibrated to obtain a function relationship between the scattering signal intensity and the particle size to be calibrated.

[0091] Step S23: comparing the function relationship to be calibrated with the standard function relationship, and adjusting the input light intensity to make the two function relationships consistent. When the standard function relationship and the function relationship to be calibrated are consistent, i.e., the same scattering signal intensity is input, the two functions can obtain the same particle size.

[0092] In summary, the above embodiments describe different configurations of the standard wafer, the manufacturing method thereof, and the semiconductor material defect correction method in detail. Of course, the above description is only a description of the preferred embodiments of the present application, and does not limit the scope of the present application in any way. The present application includes but is not limited to the configurations listed in the above embodiments. Those skilled in the art can easily deduce other configurations from the above embodiments. Any modification or improvement made by those skilled in the art based on the above disclosure is within the scope of the claims.

Claims

1. A standard wafer for calibrating defect size of a semiconductor material, characterized by, The standard piece comprises: a main body, which is an amorphous solid; a plurality of standard particles arranged in the main body, wherein the distance from any standard particle to the surface of the main body is greater than a preset size, and the refractive index of the amorphous solid is different from that of the standard particles.

2. The standard piece according to claim 1, characterized in that The standard particles have the same size, and the size of the standard particles ranges from 15 nm to 1000 nm.

3. The standard piece according to claim 1, characterized in that, The thickness of the main body part is 600 μm to 1000 μm, and the distribution density of the standard particles in the main body part is E6 to E10 per cm2 3 .

4. The standard piece according to claim 1, characterized in that, The ratio of the refractive index of the standard particles to that of the main body is greater than or equal to 1.

2.

5. A standard wafer for calibrating defect size of a semiconductor material, characterized by, The standard piece comprises: a main body, which is an amorphous solid; a plurality of standard particles arranged in the main body, wherein the distance from any standard particle to the surface of the main body is greater than a preset size, and the refractive index of the amorphous solid is different from that of the standard particles.

6. The standard piece according to claim 5, characterized in that The standard particles in each layer have the same size, and the sizes of the standard particles in different layers are different.

7. The standard piece according to claim 5, characterized in that The size of the standard particles ranges from 15 nm to 1000 nm.

8. The standard piece according to claim 5, characterized in that The thickness of the main body part is 600 μm to 1000 μm, and the density of the standard particles distributed in the main body part is E6 to E10 per cm2 3 .

9. The standard piece according to claim 5, characterized in that The distance between layers is not less than 10 μm.

10. The standard piece according to claim 5, characterized in that The ratio of the refractive index of the standard particles to that of the main body is greater than or equal to 1.

2.

11. A method of manufacturing a standard sheet as claimed in any one of claims 1-10, characterized in that, The standard piece comprises: forming standard particles in an amorphous solid to make the standard piece, wherein the refractive index of the standard particles is different from that of the amorphous solid, and the standard particles are arranged in a region with a preset distance from the surface of the amorphous solid.

12. The method for producing a standard sheet according to claim 11, characterized in that, The forming of the standard particles in the amorphous solid to make the standard piece comprises: providing a plurality of amorphous solids, and injecting standard particles of the same size into each amorphous solid to make a plurality of standard pieces.

13. The method of claim 11, wherein the standard sheet is made of a material selected from the group consisting of paper, plastic, and metal. The forming of the standard particles in the amorphous solid to make the standard piece comprises: providing an amorphous solid comprising a plurality of amorphous solid layers, and injecting standard particles of different sizes into the plurality of amorphous solid layers layer by layer to make a standard piece, wherein the standard particles in each layer of the amorphous solid have the same size.

14. The method of claim 13, wherein the standard piece is made by cutting a sheet of a material into a plurality of standard pieces. The amorphous solid layer is formed by casting.

15. The method of claim 13, wherein the standard sheet is made of a material selected from the group consisting of paper, plastic, and metal. The amorphous solid layer is formed by a vapor deposition method.

16. The method of producing a standard piece according to any one of claims 11 to 15, wherein The standard particles have a particle size ranging from 15 nm to 1000 nm, the amorphous solid has a thickness ranging from 600 μm to 1000 μm, and the standard particles are distributed in the amorphous solid at a density of E6 to E10 per cm2 3 .

17. A method of defect correction in a semiconductor material, characterized in that, The standard piece comprises: providing a group of standard pieces as claimed in any one of claims 1 or 2, obtaining the scattering signal intensity corresponding to each size of standard particle to establish a function relationship between the scattering signal intensity and the particle size; obtaining the scattering signal intensity of the defect of the semiconductor material, and obtaining the defect size corresponding to the scattering signal intensity based on the function relationship to obtain the corrected size of the defect; obtaining the target size of the defect of the semiconductor material; comparing the target size with the corrected size to correct the size of the defect.

18. The method of claim 17, wherein: The functional relationship between the scattering signal intensity and the particle size is: y = ax b wherein a is greater than 0 and a≠1, b is greater than 0, and the regression coefficient R 2 ≥0.

85.

19. The method of claim 18, wherein: The regression coefficient R 2 > 0.

9.

20. The method of claim 17, wherein: The semiconductor material defect correction method further comprises: defining the position coordinates of the standard particles to correct the position of the defect.

21. The method of claim 20, wherein: The position coordinates are composed of the radial position of the standard particle in the main body and the depth from the surface of the main body.

22. A method of correcting a metrology apparatus, the method comprising: The standard piece comprises: providing a standard function relationship between the scattering signal intensity and the particle size corresponding to a preset input light intensity; inputting the preset input light intensity to the device to be calibrated to obtain a to-be-calibrated function relationship between the scattering signal intensity and the particle size; comparing the to-be-calibrated function relationship with the standard function relationship, and adjusting the input light intensity to make the two function relationships consistent.

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