Semiconductor manufacturing device and method for manufacturing semiconductor device

Abstract

The present invention provides a technique for removing foreign matter occurring from friction between the vicinity of the edges of a substrate and a conveyance unit.　This semiconductor manufacturing device is provided with the conveyance unit provided with a pair of conveyance lanes for conveying the substrate on which a die is to be placed, and a foreign matter removal device provided for the conveyance lanes. The conveyance lanes have a first groove and a second groove for conveying the substrate and are provided with a suction port for sucking foreign matter into the first groove and the second groove.

Description

Semiconductor manufacturing apparatus and semiconductor device manufacturing method

[0001] The present disclosure relates to semiconductor manufacturing equipment, and is applicable, for example, to a die bonder equipped with a device for cleaning the periphery of the edge of a substrate and a transport section.

[0002] As one step in the manufacturing process of a semiconductor device, a semiconductor manufacturing device (e.g., a die bonder) picks up a die separated from a wafer and bonds the picked-up die to a substrate. The die bonder may be provided with a foreign matter removal device that removes dust (hereinafter referred to as foreign matter) from the substrate surface (e.g., JP 2019-160948 A).

[0003] Japanese Patent Application Laid-Open No. 2019-160948

[0004] The present disclosure provides a technique capable of removing foreign matter generated by friction between the periphery of the edge of a substrate and a conveying section. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings.

[0005] A representative aspect of the present disclosure can be briefly outlined as follows: A semiconductor manufacturing apparatus includes a transport unit having a pair of transport lanes for transporting a substrate on which a die is placed, a foreign matter removal device provided on the transport lanes, and the transport lanes each have a first groove and a second groove for transporting the substrate, and a suction port for sucking foreign matter into the first groove and the second groove.

[0006] According to the present disclosure, it is possible to remove foreign matter generated by friction between the periphery of the edge of the substrate and the transport section.

[0007] FIG. 1 is a top view showing an outline of a die bonder according to an embodiment. FIG. 2 is a diagram illustrating a schematic configuration as viewed from the direction of arrow A in FIG. 1. FIG. 3 is a block diagram illustrating a schematic configuration of a control system of the die bonder shown in FIG. 1. FIG. 4 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in FIG. 1. FIG. 5 is an enlarged plan view showing the dashed area B, which is the conveyance lane of the die bonder according to the embodiment of FIG. 1. FIG. 6 is a cross-sectional view of the conveyance section of the die bonder taken along line CC shown in FIG. 5. FIG. 7 is a diagram illustrating a suction port as viewed from the direction of arrow E shown in FIG. 6. FIG. 8 is a plan cross-sectional view illustrating foreign matter suction by the conveyance section of the die bonder taken along line FF shown in FIG. 6. FIG. 9 is a cross-sectional schematic view illustrating foreign matter suction by a vacuum generator according to an embodiment. FIG. 10 is a diagram illustrating the foreign matter discharge flow according to an embodiment. FIG. 11 is a graph illustrating the number of foreign matter occurrences in the prior art and the embodiment. FIG. 12 is a table illustrating the average number of foreign matter occurrences shown in FIG. 11. FIG. 13 is a cross-sectional view illustrating surface treatment of the conveyance section according to an embodiment. FIG. 14 is a cross-sectional view of the conveyance section of the die bonder illustrating a first modified example. Fig. 15 is a diagram of a suction port of a die bonder for explaining a second modified example, and Fig. 16 is a cross-sectional view of a conveying part of a die bonder for explaining a third modified example.

[0008] Hereinafter, embodiments and modifications will be described with reference to the drawings. However, in the following description, the same components will be assigned the same reference numerals, and repeated description may be omitted. Note that, to clarify the description, the drawings may show the width, thickness, shape, etc. of each part more schematically than in the actual embodiment. Furthermore, the dimensional relationships and ratios of each element between multiple drawings do not necessarily match.

[0009] The configuration of a die bonder, which is one embodiment of semiconductor manufacturing equipment, will be described with reference to Figures 1 and 2. Figure 1 is a top view showing an outline of the die bonder in the embodiment. Figure 2 is a diagram illustrating the outline of the configuration as seen from the direction of arrow A in Figure 1.

[0010] The die bonder 1 broadly comprises a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate unloading unit 70, and a control unit (control device) 80. The Y2-Y1 direction is the front-to-rear direction of the die bonder 1, the X2-X1 direction is the left-to-right direction, and the Z1-Z2 direction is the up-to-down direction. The wafer supply unit 10 is located on the front side of the die bonder 1, and the bonding unit 40 is located on the rear side.

[0011] The wafer supply unit 10 includes a wafer cassette lifter 11 , a wafer holder 12 , a peeling unit 13 , and a wafer recognition camera 14 .

[0012] A wafer cassette lifter 11 moves a wafer cassette (not shown), which stores a plurality of wafer rings WR, up and down to the wafer transport height. A wafer correction chute (not shown) aligns the wafer rings WR supplied from the wafer cassette lifter 11. A wafer extractor (not shown) removes wafer rings WR from the wafer cassette and supplies them to the wafer holder 12, or removes them from the wafer holder 12 and stores them in the wafer cassette.

[0013] A wafer W is adhered (attached) to a dicing tape DT, and the wafer W is divided into a plurality of dies D. The dicing tape DT is held by a wafer ring WR. The wafer W is, for example, a semiconductor wafer or a glass wafer, and the dies D are semiconductor chips or glass chips. A film-like adhesive material DF called a die attach film (DAF) may be attached between the wafer W and the dicing tape DT. The adhesive material DF hardens when heated.

[0014] The wafer holder 12 is moved in the X1-X2 and Y1-Y2 directions by a drive unit (not shown), and moves the die D to be picked up to the position of the peeling unit 13. The wafer holder 12 also rotates the wafer ring WR in the XY plane by a drive unit (not shown). The peeling unit 13 is moved in the vertical direction by a drive unit (not shown). The peeling unit 13 peels the die D from the dicing tape DT.

[0015] The wafer recognition camera 14 recognizes the pick-up position of the die D to be picked up from the wafer W and inspects the surface of the die D.

[0016] The pickup unit 20 has a pickup head 21 and a pickup head table 23. The pickup head 21 is provided with a collet 22 that suction-holds the peeled die D at its tip. The pickup head 21 picks up a die D from the wafer supply unit 10 and places it on the intermediate stage 31. The pickup head table 23 moves the pickup head 21 in the Z1-Z2 direction, the Y1-Y2 direction, and the X1-X2 direction. The pickup head table 23 may also rotate the pickup head 21.

[0017] The intermediate stage unit 30 has an intermediate stage 31 on which the die D is placed, and a stage recognition camera 34 for recognizing the die D on the intermediate stage 31. The intermediate stage 31 has suction holes (not shown) that suck the placed die D. The placed die D is temporarily held on the intermediate stage 31. The intermediate stage 31 is both a placement stage on which the die D is placed and a pickup stage on which the die D is picked up.

[0018] The bonding section 40 includes a bond head 41, a bond head table 43, a substrate recognition camera 44, and a bond stage 46. The bond head 41 is provided with a collet 42 that suction-holds a die D at its tip. The bond head table 43 moves the bond head 41 in the Z1-Z2, Y1-Y2, and X1-X2 directions. The bond head table 43 may also rotate the bond head 41. The substrate recognition camera 44 captures an image of the substrate S and recognizes the bond position. Here, the substrate S may be, for example, a wiring board, a lead frame, or a glass substrate. The substrate S has multiple product areas (hereinafter referred to as package areas P) that will ultimately become a single package. The substrate S also has position recognition marks (not shown) for the package areas P. The bond stage 46 is raised when the die D is placed on the substrate S, supporting the substrate S from below. The bond stage 46 has suction holes (not shown) for vacuum-adsorbing the substrate S, and is capable of fixing the substrate S. The bond stage 46 also has a heating section (not shown) for heating the substrate S.

[0019] With this configuration, the bond head 41 corrects the pick-up position and posture based on the image data of the stage recognition camera 34, and picks up the die D from the intermediate stage 31. Then, the bond head 41 bonds the die D onto the package area P of the substrate S based on the image data of the substrate recognition camera 44, or bonds the die D by stacking it on top of a die that has already been bonded onto the package area P of the substrate S.

[0020] The transport unit 50 has transport claws 51 that grip and transport the substrate S, and a transport lane (hereinafter referred to as a chute) 52 along which the substrate S moves. The substrate S moves in the X1 direction by driving a nut (not shown) of the transport claws 51 provided on the chute 52 with a ball screw (not shown) provided along the chute 52. With this configuration, the substrate S moves from the substrate supply unit 60 along the chute 52 to the bonding position, and after bonding, moves to the substrate unloading unit 70 and hands the substrate S over to the substrate unloading unit 70.

[0021] The substrate supply unit 60 removes the substrate S, which has been stored in a transport jig (not shown) and carried in, from the transport jig (not shown) and supplies it to the transport unit 50. The substrate unloading unit 70 stores the substrate S, which has been transported by the transport unit 50, in the transport jig (not shown).

[0022] Next, the control unit 80 will be described with reference to Fig. 3. Fig. 3 is a block diagram showing the schematic configuration of the control system of the die bonder shown in Fig. 1.

[0023] The control system 8 includes a control unit (control device) 80, a drive unit 86, a signal unit 87, and an optical system 88. The control unit 80 is broadly configured as a computer including a control / arithmetic unit 81, which is primarily composed of a CPU (Central Processing Unit), a storage unit 82, an input / output device 83, a bus line 84, and a power supply unit 85. The storage unit 82 has a main storage unit 82a and an auxiliary storage unit 82b. The main storage unit 82a is configured with a RAM (Random Access Memory) that stores processing programs and the like. The auxiliary storage unit 82b is configured with a HDD (Hard Disk Drive) or SSD (Solid State Drive) that stores control data, image data, and the like required for control. An external storage device can also be connected to the control unit 80.

[0024] The input / output device 83 includes a monitor 83a that displays the device status and other information, a touch panel 83b that inputs operator instructions, pointing devices such as a mouse 83c that operate the monitor 83a, and an image capture device 83d that captures image data from the optical system 88. The input / output device 83 also includes a motor control device 83e and an I / O signal control device 83f. The motor control device 83e controls the drive units 86 of the XY table (not shown) of the wafer supply unit 10, the pickup head table 23, and the bond head table 43. The I / O signal control device 83f captures signals from various sensors in the signal unit 87 and controls switches and volumes that control the brightness of the lighting devices of the signal unit 87 and valves that control vacuum suction. The optical system 88 includes a wafer recognition camera 14, a stage recognition camera 34, and a substrate recognition camera 44. The wafer recognition camera 14, the stage recognition camera 34, and the substrate recognition camera 44 digitize light intensity and color. The control and calculation device 81 takes in necessary data via a bus line 84, performs calculations, controls the pickup head 21 and the like, and sends information to a monitor 83a and the like.

[0025] The control unit 80 stores image data captured by the wafer recognition camera 14, the stage recognition camera 34, and the substrate recognition camera 44 in the storage device 82 via the image capture device 83d. Using software programmed based on the stored image data, the control / arithmetic unit 81 recognizes the positions of the die D and the package area P of the substrate S and performs an appearance inspection of the die D and the substrate S. Based on the positions of the package area P of the die D and the substrate S calculated by the control / arithmetic unit 81, the software drives the drive unit 86 via the motor control device 83e. Through this process, the position of the die D on the wafer is recognized, and the pickup head table 23 and the bond head table 43 are operated to bond the die D onto the package area P of the substrate S.

[0026] The control unit 80 can be configured by installing the above-mentioned program stored in an external storage device into a computer. Examples of external storage devices include HDDs, USB memory, and SSDs. The auxiliary storage device 82b and the external storage device are configured as computer-readable recording media. Hereinafter, these will be collectively referred to as recording media. When the term "recording medium" is used in this specification, it may refer to only the auxiliary storage device 82b, only the external storage device, or both. Note that programs and data may be provided to a computer and from a computer to an external device using communication means such as the Internet or a dedicated line, without using an external storage device.

[0027] A part of the manufacturing process of a semiconductor device using the die bonder 1 (a method for manufacturing a semiconductor device) will be described with reference to Fig. 4. Fig. 4 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in Fig. 1. In the following description, the operation of each part constituting the die bonder 1 is controlled by a control unit 80.

[0028] (Wafer Loading Step: Step S1) A wafer cassette containing wafer rings WR is loaded into wafer cassette lifter 11. The loaded wafer rings WR are supplied (loaded) onto wafer holder 12.

[0029] (Substrate Carry-in Process: Process S2) A transport jig (not shown) storing the substrate S is loaded into the substrate supply unit 60. In the substrate supply unit 60, the substrate S stored in the transport jig (not shown) is removed from the transport jig (not shown). Then, the substrate S is supplied (carried in) to the bonding unit 40 via the transport unit 50.

[0030] (Pickup process: process S3) After process S1, the wafer holder 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is imaged by the wafer recognition camera 14, and image data is acquired from the image. The image data is processed to calculate the amount of deviation (in the X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the die bonder 1, and positioning is performed. Note that the die position reference point is previously held at a predetermined position on the wafer holder 12 as the initial setting for the device. The image data is processed to perform a surface inspection of the die D.

[0031] The die D is peeled off from the dicing tape DT by the peeling unit 13 and the pickup head 21. The die D peeled off from the dicing tape DT is attracted to and held by a collet 22 provided on the pickup head 21, and is transported to and placed on the intermediate stage 31.

[0032] The die D on the intermediate stage 31 is imaged by the stage recognition camera 34, and image data is acquired by the image capture. The image data is processed to calculate the amount of deviation (in the X, Y, and θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder 1, and positioning is performed. Note that the die position reference point is previously held at a predetermined position on the intermediate stage 31 as an initial setting for the device. The image data is processed to perform surface inspection of the die D.

[0033] After transporting the die D to the intermediate stage 31, the pickup head 21 is returned to the wafer supply unit 10. Following the procedure described above, the next die D is peeled off from the dicing tape DT, and thereafter, the dies D are peeled off one by one from the dicing tape DT according to the same procedure.

[0034] (Bonding process: process S4) The substrate S is transported to the bond stage 46 by the transport unit 50. The substrate S placed on the bond stage 46 is imaged by the substrate recognition camera 44, and image data is acquired through the image capture. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the substrate S from the substrate position reference point of the die bonder 1. Note that the substrate position reference point is previously held at a predetermined position of the bonding unit 40 as the initial setting of the device.

[0035] The suction position of the bond head 41 is corrected based on the amount of deviation of the die D on the intermediate stage 31 calculated in step S3, and the die D is suctioned by the collet 42. The bond head 41 that has suctioned the die D from the intermediate stage 31 bonds the die D to a predetermined position on the substrate S supported by the bond stage 46. The substrate recognition camera 44 captures an image of the die D bonded to the substrate S, and based on the image data acquired by the image capture, an inspection is performed to determine whether the die D has been bonded to the desired position (inspection of the relative position of the die D and the substrate S), etc.

[0036] After bonding the die D to the substrate S, the bond head 41 is returned to the intermediate stage 31. Following the procedure described above, the next die D is picked up from the intermediate stage 31 and bonded to the substrate S. This is repeated until the die D is bonded to all the package areas P of the substrate S.

[0037] (Substrate Carry-Out Process: Process S5) The transport section 50 transports the substrate S to which the die D is bonded from the bonding section 40 to the substrate transport section 70. In the substrate transport section 70, the substrate S is removed and stored in a transport jig (not shown), and then the substrate S is transported out. The transport jig (not shown) in which the substrate S is stored is transported out of the die bonder 1.

[0038] As described above, the die D is mounted on the substrate S and carried out from the die bonder 1. Thereafter, for example, a transport jig storing the substrate S on which the die D is mounted is transported to a wire bonding process, where the electrodes of the die D are electrically connected to the electrodes of the substrate S via Au wires or the like. Then, the substrate S is transported to a molding process, where the die D and the Au wires are sealed with molding resin (not shown), thereby completing a semiconductor package.

[0039] Next, the structure of the chute 52 that prevents the generation and adhesion of foreign matter to the substrate S will be described with reference to FIGS. 5 to 9. FIG. 5 is an enlarged plan view showing the dashed line area B, which is the conveyance lane of the die bonder in the embodiment of FIG. 1. FIG. 6 is a cross-sectional view of the conveyance section of the die bonder taken along line CC shown in FIG. 5. FIG. 7 is a view illustrating the suction port as viewed from the direction of arrow E shown in FIG. 6. FIG. 8 is a plan cross-sectional view illustrating the suction of foreign matter by the conveyance section of the die bonder taken along line FF shown in FIG. 6. FIG. 9 is a schematic cross-sectional view illustrating the suction of foreign matter by a vacuum generator in the embodiment.

[0040] The substrate S is transported to the bonding section 40 by a pair of chutes 52 provided in the transport section 50 of the die bonder 1. At this time, friction occurs, for example, between the chutes 52 and the periphery of the edge of the back surface of the substrate S. This friction may cause foreign matter to be generated and adhere to the substrate S. If this phenomenon occurs, it may have a significant impact on the manufacturing yield of the die bonder 1.

[0041] The pair of chutes 52 are each provided with a first groove 201 and a second groove 202 for transporting the substrate S, and a suction port 103 is provided on the side of the first groove 201. Furthermore, in order to accommodate warping of the substrate S, the transport unit 50 is also provided with an underplate 53 equipped with a drive mechanism 56 that can move up and down. Furthermore, as a component of the transport unit 50, the chute 52 is supported by chute support parts 54 on both the first groove 201 side and the second groove 202 side. The first groove 201 and the second groove 202 are subjected to a buffing surface treatment 401, which will be described later. In addition, it is desirable that the underplate 53, which comes into contact with the back surface of the substrate S, be also subjected to the buffing surface treatment 401.

[0042] During transport of the substrate S, the substrate S comes into contact with the first groove 201 and the second groove 202 and rubs against each other, generating friction, which increases the likelihood of the aforementioned foreign matter being generated and adhering to the substrate S. To discharge the foreign matter through the chute 52, suction ports 103 connected to air tube 101A and 104 connected to air tube 101B are provided in the first groove 201, and suction port 105 connected to air tube 101C is provided in the second groove 202 opposite the first groove 201. These air tubes 101A and 101B and air tube 101C, which crosses the lower part of the underplate 53, merge to form air tube 101 just before the vacuum generator 301, which will be described later. Furthermore, suction ports 103 and 104 of the first groove 201 open in the Y2 direction, and suction port 105 of the second groove 202 opens in the Y1 direction, facing the substrate S being transported. Furthermore, in order to efficiently suck up foreign matter generated by friction during transport of the substrate S, the suction path can be bent in the X1 direction, i.e., in the transport direction of the substrate S, to increase the opening area.

[0043] These air tubes 101A, 101B and 101C may join air tube 101 at any point before vacuum generator 301 (described later), or may be connected directly to vacuum generator 301.

[0044] Furthermore, although the air tubes 101A, 101B, and 101C are straight on the chute support portion 54, they may be curved or angled as long as the structure does not affect the suction of foreign matter.

[0045] Air tube 101A, which is connected to suction port 103 provided in first groove 201 of chute 52, is fixed to chute 52 by a member such as nut 57. Note that the method for fixing air tube 101A is not limited to this, and any member other than nut 57 may be used as long as it is capable of fixing. Of course, the methods for fixing air tube 101B connected to suction port 104 and air tube 101C connected to suction port 105 (not shown) are also the same as those for air tube 101A.

[0046] The shape of the suction ports will now be described. The suction ports 103 and 104 have, for example, a substantially circular shape and open in the Y2 direction, so they appear elliptical when viewed from the direction of arrow E. Furthermore, because they open with the same diameter as the height of the first groove 201, they can efficiently suck in foreign matter generated within the groove. The suction port 105 (not shown) provided in the second groove 202 has a similar structure.

[0047] Next, with reference to FIGS. 8 and 9, the discharge of foreign matter generated by friction between the substrate S and the chute 52 to the outside of the die bonder 1 will be described.

[0048] The foreign matter sucked from the suction ports 103, 104, and 105 joins together at the air tube 101, as indicated by the arrows in FIG. 8 . This air tube 101 is connected to a vacuum generator 301 shown in FIG. 9 . The vacuum generator 301 and the air tube 101 constitute a foreign matter removal device 300, which is provided in the conveying section 50 as shown in FIG. 1 . The vacuum generator 301 further comprises a suction tube 302 that sucks the foreign matter from the suction ports 103, 104, and 105 through the air tube 101, an air supply tube 303 to which compressed air G is sent from a compressor 305 provided outside the die bonder 1, a nozzle 306 that throttles the compressed air G, and an exhaust tube 304 that discharges the sucked foreign matter from an exhaust port 307. This foreign matter removal device 300 is controlled by the control section 80. The vacuum generator 301 may be, for example, a vacuum generator in which the compressor 305 or the air supply cylinder 303 and the exhaust port 307 are positioned in a non-linear manner, and is not necessarily limited to the structure shown in FIG.

[0049] Next, a foreign matter removal flow using the foreign matter removal device 300 will be described with reference to Fig. 10. Fig. 10 is a diagram illustrating a foreign matter removal flow in this embodiment.

[0050] (Substrate Loading Process: Process S21) A transport jig (not shown) storing the substrate S is loaded into the substrate supply unit 60. In the substrate supply unit 60, the substrate S is taken out of the transport jig (not shown) and loaded into the chute 52 of the transport unit 50. At this time, friction occurs between the periphery of the edge of the back surface of the substrate S and the chute 52.

[0051] (Compressed air supply process: process S22) The vacuum generator 301 can generate a vacuum inside the chamber by supplying compressed air G sent from the compressor 305. The compressed air G from the compressor 305 provided outside the die bonder 1 is throttled by a nozzle 306 and is released at high speed from an exhaust port 307 of an exhaust tube 304.

[0052] (Vacuum Generation Step: Step S23) When the compressed air G passes through the nozzle 306 and the flow rate increases, the pressure in the flow path within the exhaust tube 304 decreases, and a vacuum state is generated.

[0053] (Foreign matter suction process: process S24) By creating a vacuum, foreign matter generated by friction between the edge of the back surface of the substrate S and the chute 52 can be sucked in through the suction ports 103, 104 of the first groove 201 of the chute 52 and the suction port 105 of the second groove 202, and can be sucked into the air tube 101.

[0054] (Foreign matter discharge step: step S25) The foreign matter sucked into the vacuum generator 301 is sent from the air tube 101 to the exhaust port 307 by the vacuum state in the exhaust tube 304, and is discharged to the outside of the foreign matter removal device 300 as indicated by the dashed arrow. Then, the foreign matter is discharged to the outside of the area where the die bonder 1 is installed by an exhaust pipe (not shown) connected to the exhaust port 307.

[0055] In the foreign matter removal device 300, the description has been given with respect to foreign matter generated by friction between the periphery of the edge of the back surface of the substrate S and the chute 52. However, foreign matter such as particles already attached to the substrate S and not caused by friction can also be discharged during transport in the chute 52. As shown in FIG. 6 , gaps are formed between the first groove 201 and the second groove 202 and the periphery of the edge and front surface of the substrate S. As described above, the suction paths of the suction ports 103, 104, and 105 are bent toward the transport direction of the substrate S, enlarging the opening area. Therefore, suction by these suction ports generates an air flow in the opposite direction to the transport of the substrate S. Therefore, not only foreign matter generated by friction but also foreign matter already attached to the substrate S can be sucked into the suction ports 103, 104, and 105 and discharged.

[0056] Next, the particle size and number of foreign particles generated by friction were measured 50 times for the conventional technology, the chute 52 subjected to buffing surface treatment 401, and the vacuum generator 301. The results were then described using Figures 11 and 12. Figure 11 is a graph illustrating the number of foreign particles generated in the conventional technology and the embodiment. Figure 12 is a table illustrating the average number of foreign particles generated in Figure 11.

[0057] 11 shows the results of actually transporting a substrate S 50 times under the same conditions using a die bonder 1, and measuring the number of particles (foreign matter) present inside the grooves of a chute 52 having a first groove 201 and a second groove 202, with sizes of 0.5 μm or larger, and then 1.0 μm or larger. The transport order is as follows: (a) no surface treatment was performed inside the grooves of the chute 52; (b) buff surface treatment 401 with an arithmetic mean roughness Ra of 0.2 was performed; and finally (c) after the buff surface treatment 401, foreign matter was sucked out at 8 L / min by the above-described foreign matter removal device 300. FIG. 12 is a table summarizing the results of FIG. 11, where the average particle counts were calculated.

[0058] From these results, it can be seen that for both particle sizes, the particle count relationship is buff surface treatment 401 + suction (c) < buff surface treatment 401 (b) < prior art (a). In particular, in the case of buff surface treatment 401 + suction (c), a significant reduction in the particle count was obtained. As described above, it can be seen that not only the suction by the foreign matter removal device 300 of this embodiment, but also the surface condition for reducing friction by the buffing of the chute 52, has a significant effect.

[0059] Next, surface treatments other than the buff surface treatment 401 of the chute 52 will be described with reference to Fig. 13. Fig. 13 is a cross-sectional view illustrating the surface treatment of the transfer unit in this embodiment. As shown in Fig. 13, the inside of each of the first groove 201 and the second groove 202 of the chute 52 is subjected to a surface treatment 402 other than the buff surface treatment 401, such as a diamond-like carbon coating, a ceramic coating, a jet surface treatment, or a blast treatment, which prevents foreign matter from adhering to the surface and reduces friction with the substrate S, and has the same effect as the buff surface treatment 401.

[0060] In addition, similar to the above-described buff surface treatment 401, the underplate 53 of the transport unit 50 may also be subjected to surface treatment 402 such as diamond-like carbon coating, ceramic coating, jet surface treatment, or blast treatment, thereby preventing foreign matter generated during transport other than that generated by friction between the chute 52 and the substrate S, as well as the adhesion of existing foreign matter to the backside of the substrate S. In particular, the substrate S being transported is likely to be warped due to stress, and the underplate 53 may be moved up and down by a drive unit (not shown) to accommodate the warpage. Therefore, such surface treatment of the underplate 53, which is a movable part, is effective as a measure against foreign matter on the backside of the substrate S.

[0061] Although the present disclosure has been specifically described above based on the embodiments, it goes without saying that the present disclosure is not limited to the above embodiments and can be modified in various ways.

[0062] According to this aspect, one or more of the following effects can be obtained.

[0063] Suction ports 103 and 104 are provided in the first groove 201 of the chute 52, and suction port 105 is provided in the second groove 202, and the suction path is bent toward the direction in which the substrate S is transported, so that vacuum suction can be performed in the opposite direction to the direction in which the substrate S is transported. Therefore, foreign matter generated by friction between the periphery of the edge of the back surface of the substrate S and the chute 52 during transport can be discharged without adhering to the substrate S, reducing the risk of foreign matter being brought into and released from the bonding portion 40 of the substrate S.

[0064] By removing the foreign matter as described above, a clean environment can be maintained within the die bonder 1 when the substrate S is being transported.

[0065] By performing surface treatment such as buffing 401 on the chute 52, the edges of the rear surface of the substrate S are not ground, thereby suppressing the generation of foreign matter.

[0066] Since foreign matter is removed every time a substrate S is transported, the frequency of maintenance work by an operator, that is, the work of removing foreign matter from the chute 52, can be reduced.

[0067] Below, several representative modified examples of the embodiment are given. In the following description of the modified examples, the same reference numerals as those in the above-described embodiment may be used for parts having the same configurations and functions as those described in the above-described embodiment. Furthermore, the description of such parts may be appropriately cited within the scope of not being technically inconsistent. Furthermore, a part of the above-described embodiment and all or part of the multiple modified examples may be appropriately applied in a composite manner within the scope of not being technically inconsistent.

[0068] <First Modification> As a first modification, the position of the suction port of the transport unit 50 of the die bonder 1 will be described. FIG. 14 is a cross-sectional view of the transport unit of the die bonder illustrating the first modification. Other than the position of the suction port 106 of the first groove 201 in the chute 52, the first modification is the same as the above-described embodiment. In the first modification, the suction port 106 is provided below the first groove 201 of the chute 52. Note that, as in the embodiment, suction ports (not shown) are provided below the second groove 202 and at other positions on the first groove 201. Furthermore, the suction path can be bent toward the transport direction of the substrate S to increase the opening area.

[0069] By providing the suction port 106 at the bottom in this manner, it is possible to efficiently suck foreign matter in all directions within the groove, including the natural falling of foreign matter caused by friction between the chute 52 and the rear surface of the substrate S. The suction port 106 here can be of course of the generally circular shape described above, but can also be of a generally rectangular shape as described below.

[0070] Furthermore, providing suction ports below the first groove 201 and the second groove 202 can reduce the area where friction occurs between the substrate S and the chute 52, which also helps prevent the generation of foreign matter.

[0071] <Second Modification> As a second modification, the shape of the suction port of the transport unit 50 of the die bonder 1 will be described. FIG. 15 is a diagram of the suction port of the die bonder illustrating the second modification. As in the embodiment, this is a schematic view from the Y2 direction, and the suction ports 107 and 108 provided in the first groove 201 have a substantially rectangular shape. The suction ports 107 and 108 each open toward the substrate S being transported. Furthermore, because they open at the same height as the first groove 201, foreign matter generated within the groove can be efficiently sucked. Of course, a substantially rectangular suction port (not shown) is also provided in the second groove 202. Furthermore, to efficiently suck foreign matter, the long side of the substantially rectangular opening can be extended in the X1 direction, i.e., toward the transport direction of the substrate S, or, as in the embodiment, the suction path can be bent toward the transport direction of the substrate S.

[0072] By forming the suction ports 107 and 108 into a substantially rectangular shape, the cross-sectional area of ​​the suction ports 107 and 108 is increased, allowing more foreign matter to be sucked in at one time and enabling the suction ports 107 and 108 to accommodate a wide range of sizes of foreign matter to be sucked in.

[0073] In FIG. 15, the nozzle 51 is provided on the side of the first groove 201 of the chute 52, but it goes without saying that the nozzle 51 can also be provided below the first groove 201 and the second groove 202.

[0074] In these first and second modified examples, the suction port can also be directed in the direction in which the substrate S is transported, and vacuum suction can be performed in the opposite direction, allowing foreign matter generated by friction between the substrate S and the chute 52 during transport to be discharged from the die bonder 1, further reducing the risk of releasing foreign matter into the transport section 50.

[0075] Furthermore, even when these first and second modified examples are used, each treatment can be performed using the same treatment procedures and conditions as in the above-described embodiment, and the same effects as in the above-described embodiment can be obtained.

[0076] <Third Modification> As a third modification, foreign matter removal from the transport unit 50 of the die bonder 1 will be described. FIG. 16 is a cross-sectional view of the transport unit of the die bonder illustrating the third modification. In FIG. 16, in addition to the vacuum generator 301 used in the above-described embodiment, a blow device 600 that removes foreign matter from the surface of the substrate S is used. A blow generator 602 equipped with a nozzle 601 is provided in the Z1 direction above the transport unit 50. By using a movable nozzle 601 whose tip direction and position can be changed, foreign matter can be reliably sucked through the suction port 103 after blowing the surface of the substrate S. Of course, as in the embodiment, suction ports (not shown) are provided at other positions in the first groove 201 and in the second groove 202.

[0077] The blower used may be, for example, an air blower that continuously blows a constant amount of air, a pulse blower that oscillates air by switching a switching valve on and off in short bursts, or an ionizer blower that neutralizes static electricity with ions to remove electricity or dust. By using these blowers, foreign matter can be removed from at least the area 500 enclosed by the dashed line in FIG. 16 , including the first groove 201 and the second groove 202.

[0078] Not only foreign matter generated by friction between the chute 52 and the peripheral edge of the rear surface of the substrate S, but also foreign matter present on the front surface of the substrate S can be removed.

[0079] The disclosure made by the present inventor has been specifically described above based on embodiments and modified examples, but it goes without saying that the present disclosure is not limited to the above embodiments and modified examples, and various modifications are possible.

[0080] For example, in the embodiment, the foreign matter removal device 300 is provided in the chute 52, but it may be provided in an empty space in the die bonder 1 other than the chute 52, taking into consideration the efficiency of the internal space of the die bonder 1.

[0081] In the embodiment, an example using a die attach film (DAF) has been described, but a DAF may be omitted by providing a preform unit that applies adhesive to the substrate S. The preform unit includes a preform head that applies a paste adhesive, a preform table that drives the preform head in the vertical and horizontal directions, and a preform stage that holds the substrate.

[0082] In the embodiment, a die bonder 1 has been described in which a die D is picked up from a wafer supply unit 10 by a pick-up head 21 and placed on an intermediate stage 31, and the die D placed on the intermediate stage 31 is bonded to a substrate S by a bond head 41. However, the present invention is not limited to this, and can also be applied to a die bonder in which a die is picked up from a wafer supply unit by a bond head and bonded to a substrate.

[0083] For example, the present invention can be applied to a die bonder that does not have the intermediate stage 31 and the pickup head 21 and that bonds a die from a wafer supply unit to a substrate with a bond head.

[0084] It is also applicable to a flip chip bonder that does not have an intermediate stage 31, picks up a die from a wafer supply unit, turns the flip pick-up head upside down to transfer the die to the bond head, and bonds the die to a substrate with the bond head.

[0085] In the embodiment, the die bonder 1 has been described as an example, but the present invention can also be applied to a mounting device that picks up a work by suction and places the picked-up work on a substrate or the like.

[0086] REFERENCE SIGNS LIST 1... Die bonder (semiconductor manufacturing equipment) 50... Conveying section 52... Chute (conveying lane) 103, 104, 105, 106, 107, 108... Suction port 201... First groove 202... Second groove 300... Foreign matter removal device

Claims

1. A semiconductor manufacturing device comprising: a transport section having a pair of transport lanes for transporting a substrate on which a die is placed; a foreign matter removal device provided on the transport lanes; the transport lanes having first and second grooves for transporting the substrate, and suction ports for sucking foreign matter into the first and second grooves.

2. A semiconductor manufacturing apparatus according to claim 1, wherein the foreign matter removal device removes the foreign matter adhering to the substrate or the foreign matter generated by friction between the substrate and the transport lane.

3. The semiconductor manufacturing apparatus according to claim 2, wherein the first groove and the second groove are provided with at least one suction port.

4. A semiconductor manufacturing apparatus according to claim 3, wherein the foreign matter removal device comprises a vacuum generator and an air tube, and the suction port and the vacuum generator are connected by the air tube.

5. A semiconductor manufacturing apparatus according to claim 4, wherein the foreign matter removal device uses compressed air sent to the air supply cylinder of the vacuum generator to suck the foreign matter through the suction port via the air tube and discharges it from the exhaust port of the exhaust pipe of the vacuum generator.

6. A semiconductor manufacturing apparatus according to claim 4, wherein the foreign matter removal device is a semiconductor manufacturing apparatus in which the air tubes connected to the suction ports of the first groove and the second groove join together and are connected to the vacuum generator.

7. The semiconductor manufacturing equipment according to claim 1, wherein the insides of the first groove and the second groove of the transport lane are buffed.

8. A semiconductor manufacturing apparatus according to claim 1, wherein the inside of the first groove and the second groove of the transport lane is surface-treated with one of diamond-like carbon coating, ceramic coating, jet surface treatment, and blast treatment.

9. The semiconductor manufacturing equipment according to claim 1, wherein the surface of the underplate of the transport section is buffed.

10. A semiconductor manufacturing apparatus according to claim 1, wherein the surface of the underplate of the transfer section is surface-treated by one of diamond-like carbon coating, ceramic coating, jet surface treatment, and blast treatment.

11. A semiconductor manufacturing apparatus according to claim 9 or 10, wherein the underplate is capable of moving up and down to accommodate warpage of the substrate.

12. The semiconductor manufacturing apparatus according to claim 3, wherein the suction port is provided on the side of or below the first groove and the second groove.

13. The semiconductor manufacturing apparatus according to claim 12, wherein the suction port opens toward the substrate being transported.

14. The semiconductor manufacturing apparatus according to claim 12, wherein the suction port is substantially circular or substantially rectangular.

15. The semiconductor manufacturing equipment according to claim 1, further comprising a blower device above the transport section.

16. A method for manufacturing a semiconductor device using a die bonder comprising: a pair of transport lanes for transporting a substrate on which a die is placed; a foreign matter removal device provided on the transport lanes; the transport lanes having first and second grooves for transporting the substrate; and suction ports for discharging foreign matter into the first and second grooves, the method including a step of removing the foreign matter from the substrate.

17. A method for manufacturing a semiconductor device according to claim 16, wherein the step of removing the foreign matter removes the foreign matter adhering to the substrate or the foreign matter generated by friction between the substrate and the transport lane.

18. A method for manufacturing a semiconductor device according to claim 17, wherein the step of removing the foreign matter comprises sending compressed air to a vacuum generator and discharging the foreign matter from the suction port connected to the vacuum generator by an air tube.

19. The method of manufacturing a semiconductor device according to claim 18, wherein the step of removing the foreign matter involves applying one of air blow, pulse blow, or ionizer blow.

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